Power control module of power amplifier and radio frequency front end module

Abstract

The invention discloses a power control module of a power amplifier and a radio frequency front-end module, and the power control module is at least partially integrated in a second chip and comprises a temperature detection circuit which is used for detecting the working temperature of the power amplifier in a first chip and generating a detection voltage related to the working temperature; the threshold comparison circuit is used for comparing the detection voltage with at least one preset threshold voltage and outputting a comparison result, and the comparison result is used for indicating the magnitude relation between the detection voltage and the preset threshold voltage; and the control circuit is used for controlling the power mode of the power amplifier according to the comparison result. Through the temperature detection circuit, the threshold comparison circuit and the control circuit, heating of the power amplifier can be delayed before the working temperature of the power amplifier reaches a critical point, so that the working temperature of the power amplifier is not easy to reach the critical point, the frequency of closing the power amplifier is reduced, the efficiency of the power amplifier is improved, and the service life of the power amplifier is prolonged. The service life of the power amplifier is prolonged.

Description

Technical Field

[0001] The present application relates to the technical field of power amplifiers, and in particular to a power control module and a radio frequency front-end module of a power amplifier. Background Art

[0002] A power amplifier is an electronic amplifier that can increase the power amplitude of a given input signal and amplify the input signal power to a level sufficient to drive the output load. It can be used in a variety of application scenarios such as RF amplification and audio amplification.

[0003] When the power amplifier is working, it will generate heat, which will put the circuit components inside or around the power amplifier in an adverse overheating environment, which can easily cause damage to the components. Summary of the invention

[0004] The present application provides a power control module and a radio frequency front-end module of a power amplifier, which can control the heating level of the power amplifier to avoid overheating and damage.

[0005] In order to achieve the above-mentioned objectives, the first aspect of the present application provides a power control module of a power amplifier, comprising: a temperature detection circuit, used to detect the operating temperature of the power amplifier and generate a detection voltage related to the operating temperature; a threshold comparison circuit, used to compare the detection voltage with at least one preset threshold voltage and output a comparison result, wherein the comparison result is used to indicate the magnitude relationship between the detection voltage and the preset threshold voltage; and a control circuit, used to control the power mode of the power amplifier according to the comparison result.

[0006] Optionally, the detection voltage is positively correlated with the operating temperature, and the control circuit is further used to: shut down the power amplifier when the comparison result indicates that the detection voltage is greater than a preset first threshold voltage; or, the detection voltage is negatively correlated with the operating temperature, and the control circuit is further used to: shut down the power amplifier when the comparison result indicates that the detection voltage is less than a preset third threshold voltage.

[0007] Optionally, the control circuit is further configured to: maintain or switch the power mode of the power amplifier according to the comparison result and the current power mode of the power amplifier.

[0008] Optionally, the detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier; or, the detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier.

[0009] Optionally, the detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, and the current power mode of the power amplifier is a high power mode, switch the power mode of the power amplifier to a low power mode; or, the detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, and the current power mode of the power amplifier is a high power mode, switch the power mode of the power amplifier to a low power mode.

[0010] Optionally, the detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, and the current power mode of the power amplifier is a low power mode, maintain the current power mode of the power amplifier; or, the detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, and the current power mode of the power amplifier is a low power mode, maintain the current power mode of the power amplifier.

[0011] Optionally, the detection voltage is positively correlated with the operating temperature, and the control circuit is used to: maintain the current power mode of the power amplifier when the comparison result indicates that the detection voltage is less than or equal to the second threshold voltage; or, the detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: maintain the current power mode of the power amplifier when the comparison result indicates that the detection voltage is greater than or equal to the fourth threshold voltage.

[0012] Optionally, the power control module also includes: a scaling circuit, connected to the temperature detection circuit, for reducing or amplifying the detection voltage; the threshold comparison circuit, further for comparing the reduced or amplified detection voltage with at least one preset threshold voltage, and outputting a comparison result.

[0013] Optionally, the temperature detection circuit comprises: a detection resistor, a first end of the detection resistor is used to receive a current with a temperature coefficient, and a second end of the detection resistor is grounded; wherein the first end of the detection resistor is the output end of the temperature detection circuit.

[0014] Optionally, the detection resistor is an adjustable resistor.

[0015] Optionally, the temperature detection circuit includes: a first current source, configured to output a first current; and a temperature detection element, connected to the first current source, configured to generate a detection voltage having a temperature coefficient based on the first current.

[0016] Optionally, the temperature detection element is a diode, the anode of the diode is connected to the output end of the first current source, and the cathode of the diode is grounded; or,

[0017] The temperature detection element is a triode, the base and collector of the triode are respectively connected to the output end of the first current source, and the emitter of the triode is grounded.

[0018] Optionally, the first current source is an adjustable current source, configured to output an adjustable first current.

[0019] Optionally, the temperature detection circuit includes: a second current source, configured to output a second current; and a thermistor, connected to the second current source, configured to generate a detection voltage having a temperature coefficient based on the second current.

[0020] A second aspect of the present application provides a radio frequency front-end module, comprising: a substrate; a power amplifier integrated in a first chip, the first chip being disposed on the substrate; and a power control module as described in any one of the above items, disposed on the substrate.

[0021] Optionally, a second chip is further provided on the substrate, and the power control module is integrated in the second chip.

[0022] Optionally, the thermistor in the power control module is arranged on the substrate;

[0023] A second chip is also disposed on the substrate, and all components in the power control module except the thermistor are integrated in the second chip.

[0024] The third aspect of the present application provides a radio frequency front-end module, comprising: a substrate; a power amplifier, integrated in a first chip; a temperature detection circuit, used to detect the operating temperature of the power amplifier and generate a detection voltage related to the operating temperature, the temperature detection circuit being integrated in a second chip; a metal layer is provided on at least part of the surface of the substrate, wherein the first chip and the second chip are spaced apart from each other in the metal layer.

[0025] The power control module and RF front-end module provided by the present application can detect the operating temperature of the power amplifier and generate a detection voltage related to the operating temperature, compare the detection voltage with one or more preset threshold voltages, and control the power mode of the power amplifier according to the magnitude relationship between the detection voltage and at least one threshold voltage, thereby realizing flexible control of the power mode according to the operating temperature of the power amplifier. The present application can delay the heating of the power amplifier before the operating temperature of the power amplifier reaches the critical point, so that its operating temperature is not easy to reach the critical point, thereby reducing the frequency of the power amplifier being shut down, improving the efficiency of the power amplifier, and extending the service life of the power amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a structural schematic diagram of a power control module of a power amplifier provided in an embodiment of the present application;

[0027] Figure 2 It is a structural schematic diagram of a power control module of another power amplifier in an embodiment of the present application;

[0028] Figure 3 is a circuit structure diagram of a scaling circuit provided in an embodiment of the present application;

[0029] Figure 4 is a circuit structure diagram of another scaling circuit provided in an embodiment of the present application;

[0030] Figure 5 Schematic diagram of a circuit structure of a temperature detection circuit provided in an embodiment of the present application;

[0031] Figure 6 is a circuit structure diagram of another temperature detection circuit provided in an embodiment of the present application;

[0032] Figure 7 is a circuit structure diagram of another temperature detection circuit provided in an embodiment of the present application;

[0033] Figure 8 is a circuit structure diagram of another temperature detection circuit provided in an embodiment of the present application;

[0034] Fig. 9is a circuit structure diagram of another temperature detection circuit provided in an embodiment of the present application;

[0035] Fig.10 It is a structural schematic diagram of a radio frequency front-end module provided in an embodiment of the present application;

[0036] Fig.11 is a schematic diagram of the structure of another radio frequency front-end module provided in an embodiment of the present application;

[0037] Fig.12 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0038] Fig.13 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0039] Fig.14 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0040] Fig.15 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0041] Fig.16 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0042] Fig.17 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0043] Fig.18 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0044] Fig.19 It is a structural diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0045] Fig. 20 It is a structural schematic diagram of another radio frequency front-end module provided in an embodiment of the present application;

[0046] Fig.21 It is a structural diagram of another RF front-end module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0047] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0048] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0049] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, connected to, connected to, or coupled to other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0050] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0051] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "a", "an" and " / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0052] RF power amplifiers are widely used in fields such as communications, broadcasting, radar, industrial processing, medical instruments, and scientific research. At present, with the development of the fifth generation of mobile communication technology (5G), compared with 4G, the new 5G technology requires the use of a higher frequency, larger bandwidth, and higher-order QAM modulation RF front-end, which puts more stringent requirements on the performance indicators and reliability of the power amplifier of the RF front-end. The power amplifier generates heat when working, which puts the circuit components inside or around the power amplifier in an unfavorable overheating environment, which can easily cause damage to the components and reduce the reliability of the RF front-end.

[0053] In order to avoid overheating, the related art proposes to monitor the operating temperature of the power amplifier, and when the operating temperature of the power amplifier is higher than the critical operating temperature, shut down the power amplifier to avoid damage. However, this method cannot control the operating temperature of the power amplifier when the temperature of the power amplifier does not reach the critical operating temperature, so that the operating temperature of the power amplifier is easy to reach the critical point, which leads to the power amplifier being frequently shut down, excessively reducing the efficiency of the power amplifier. Moreover, frequently turning on or off the power amplifier will affect its service life.

[0054] After long-term research, the inventors of the present application discovered that the heating of a power amplifier is related to its power mode. In a higher power mode, the heating of the power amplifier is usually more serious, and in a lower power mode, the heating of the power amplifier is less. Therefore, the inventors proposed a power control module and a RF front-end module of the power amplifier of the present application, which adjust the power mode of the power amplifier according to the operating temperature of the power amplifier, thereby controlling the heating of the power amplifier and avoiding overheating of the power amplifier.

[0055] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0056] See also Figure 1, the present application embodiment provides a power control module 10 of a power amplifier, such as Figure 1 As shown, the power control module 10 includes a temperature detection circuit 11 , a threshold comparison circuit 12 and a control circuit 13 .

[0057] in:

[0058] The temperature detection circuit 11 is used to detect the operating temperature of the power amplifier and generate a detection voltage related to the operating temperature.

[0059] As an implementation, the temperature detection circuit 11 may include one or more temperature sensitive elements. As the temperature changes, at least one electrical parameter such as the resistance value, capacitance value or inductance value of the temperature sensitive element changes, so that the current flowing through the temperature sensitive element or the output voltage of the temperature sensitive element changes, thereby obtaining a detection voltage related to the temperature. The temperature detection circuit 11 or the temperature sensitive element in the temperature detection circuit 11 may be arranged near the power amplifier to detect the operating temperature of the power amplifier and obtain a detection voltage V related to the operating temperature of the power amplifier. T .

[0060] As another embodiment, the temperature detection circuit 11 may also receive a current or voltage with a temperature coefficient and convert the received current or voltage with a temperature coefficient into a detection voltage V T The circuit for generating the current or voltage with the temperature coefficient can be arranged near the power amplifier to detect the operating temperature of the power amplifier, and enable the temperature detection circuit 11 to obtain the detection voltage V related to the operating temperature of the power amplifier. T .

[0061] Optionally, the detection voltage generated by the temperature detection circuit 11 may be positively correlated with the operating temperature of the power amplifier, that is, the higher the operating temperature of the power amplifier, the larger the amplitude of the detection voltage generated by the temperature detection circuit 11; the detection voltage generated by the temperature detection circuit 11 may also be negatively correlated with the operating temperature of the power amplifier, that is, the higher the operating temperature of the power amplifier, the smaller the amplitude of the detection voltage generated by the temperature detection circuit 11.

[0062] The threshold comparison circuit 12 is used to detect the voltage V T The detection voltage is compared with at least one preset threshold voltage Vth, and a comparison result is output, where the comparison result is used to indicate the magnitude relationship between the detection voltage and the preset threshold voltage.

[0063] The threshold comparison circuit 12 may include one or more threshold comparators. Each threshold comparator has at least two input terminals, and the threshold comparator can compare the voltage signals received at the two input terminals and output a comparison result that can indicate the magnitude relationship between the two voltage signals. In the embodiment of the present application, one end of the threshold comparator is connected to the output terminal of the temperature detection circuit 11 to receive the detection voltage V T The other end of the threshold comparator is used to receive a preset threshold voltage, so the comparison result output by the threshold comparator can indicate the detection voltage V T The relationship between the voltage and the preset threshold voltage.

[0064] As an implementation method, the preset threshold voltage may be one, and in this case the threshold comparison circuit 12 may include a threshold comparator, the comparison result of which is used to indicate the detection voltage V T The relationship between the magnitude and the specific threshold voltage.

[0065] As another implementation, there are multiple preset threshold voltages. In this case, the threshold comparison circuit 12 can use a multi-threshold comparator or multiple single-threshold comparators, which is not limited in this application. T It is compared with each preset threshold voltage and outputs a detection voltage V T The comparison result of the magnitude relationship between the voltage and each preset threshold voltage.

[0066] The comparison result output by the threshold comparison circuit 12 is a high level or a low level. T When the detection voltage V T When the detection voltage V T When the detection voltage V T When the voltage is less than the preset threshold voltage, the comparison result output by the threshold comparison circuit 12 is a high level.

[0067] In the embodiment of the present application, the high level can be represented by the code value 1, and the low level can be represented by the code value 0. When there is only one preset threshold voltage, the threshold comparison circuit 12 can output a single-bit code value 0 or 1. When there are multiple preset threshold voltages, the threshold comparison circuit 12 can output a multi-bit code value, where the number of bits of the code value is the same as the number of threshold voltages, and each bit of the code value can correspond to a threshold voltage. Taking two threshold voltages as an example, according to the detection voltage V TDepending on the magnitude relationship between the two threshold voltages, the threshold comparison circuit 12 can output any comparison result of 00, 01 / 10, or 11.

[0068] In the embodiment of the present application, each threshold voltage may represent a temperature threshold, and the detection voltage V T is a voltage related to the operating temperature of the power amplifier, so the detection voltage V T The magnitude relationship between each threshold voltage represents the magnitude relationship between the operating temperature of the power amplifier and the temperature threshold corresponding to the threshold voltage.

[0069] The control circuit 13 is used to control the power mode of the power amplifier according to the comparison result output by the threshold comparison circuit 12 .

[0070] The comparison result can indicate the detection voltage V T The magnitude relationship between each threshold voltage is, therefore, to control the power mode of the power amplifier according to the comparison result, which can be based on the detection voltage V T The power mode of the power amplifier can be controlled based on the relationship between the magnitude of the detection voltage V T The power mode of the power amplifier is controlled by the magnitude relationship between each threshold voltage.

[0071] Since the comparison result output by the threshold comparison circuit 12 represents the relationship between the operating temperature of the power amplifier and the temperature threshold corresponding to the threshold voltage, the control circuit controls the power mode of the power amplifier according to the comparison result, which is equivalent to controlling the power mode of the power amplifier according to the relationship between the operating temperature of the power amplifier and at least one temperature threshold.

[0072] In an embodiment of the present application, the power mode of the power amplifier includes at least two types, and the output power of the power amplifier is different in different power modes. Optionally, controlling the power mode of the power amplifier includes: maintaining the current power mode of the power amplifier, or switching the power mode of the power amplifier. Among them, switching the power mode of the power amplifier includes: switching the current power mode of the power amplifier to a lower power mode, or switching the current power mode of the power amplifier to a higher power mode.

[0073] It is understandable that the degree of heat generated by the power amplifier is related to its power mode. When the power mode of the power amplifier is switched to a higher power mode, the operating temperature of the power amplifier may increase; when the power mode of the power amplifier is switched to a lower power mode, the operating temperature of the power amplifier will decrease.

[0074] The power control module of the embodiment of the present application can detect the operating temperature of the power amplifier and generate a detection voltage related to the operating temperature, compare the detection voltage with one or more preset threshold voltages, and control the power mode of the power amplifier according to the magnitude relationship between the detection voltage and at least one threshold voltage, thereby realizing flexible control of the power mode according to the operating temperature of the power amplifier. The embodiment of the present application can delay the heating of the power amplifier before the operating temperature of the power amplifier reaches the critical point, so that the operating temperature is not easy to reach the critical point, thereby reducing the frequency of the power amplifier being shut down, improving the efficiency of the power amplifier, and extending the service life of the power amplifier.

[0075] The power control module of the embodiment of the present application can be independently set outside the power amplifier. It only needs to be connected to the power amplifier through a port to switch the existing power mode of the power amplifier. There is no need to change the internal circuit structure of the power amplifier, so it will not increase the design difficulty of the power amplifier. It has the advantages of easy implementation and low cost.

[0076] In some embodiments, when the operating temperature of the power amplifier approaches the critical point, over-temperature protection can be performed, that is, the power amplifier is turned off to prevent the power amplifier from being damaged due to excessively high operating temperature. Assuming that the temperature threshold of the over-temperature protection is the first temperature threshold, when the operating temperature of the power amplifier exceeds the first temperature threshold, the power control module 10 can control the power amplifier to be turned off to prevent the power amplifier from being damaged due to overheating. When the operating temperature of the power amplifier does not exceed the first temperature threshold, the power control module 10 can maintain or switch the power mode of the power amplifier according to the operating temperature of the power amplifier and the current power mode of the power amplifier to control the heating of the power amplifier and slow down the speed at which its operating temperature rises. Among them, the first temperature threshold can be set according to the maximum operating temperature of the power amplifier. Specifically, the first temperature threshold can be equal to or slightly less than the maximum operating temperature of the power amplifier. For example, when the maximum operating temperature of the power amplifier is 150°C, the first temperature threshold can be a temperature value between 140°C and 150°C.

[0077] As an implementation mode, when the detection voltage is positively correlated with the operating temperature of the power amplifier, the threshold voltage corresponding to the first temperature threshold is a preset first threshold voltage. At this time, the control circuit 13 is used to shut down the power amplifier when the comparison result indicates that the detection voltage is greater than the first threshold voltage.

[0078] Furthermore, the control circuit 13 is further configured to maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier when the comparison result indicates that the detection voltage is less than or equal to the first threshold voltage.

[0079] As another implementation, when the detection voltage is negatively correlated with the operating temperature of the power amplifier, the threshold voltage corresponding to the first temperature threshold is a preset third threshold voltage. At this time, the control circuit 13 is used to shut down the power amplifier when the comparison result indicates that the detection voltage is less than the third threshold voltage.

[0080] Furthermore, the control circuit 13 is further configured to maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier when the comparison result indicates that the detection voltage is greater than or equal to the third threshold voltage.

[0081] In this embodiment, the power control module 10 can control the power amplifier to shut down when the operating temperature of the power amplifier is too high, so as to avoid damage to the power amplifier due to overheating, thereby realizing over-temperature protection for the power amplifier. When the operating temperature of the power amplifier does not reach the critical point of over-temperature protection, the power mode of the power amplifier can be maintained or switched according to the current power mode of the power amplifier to control the heating degree of the power amplifier, slow down the speed of the operating temperature rise, and make it difficult for the operating temperature to reach the critical point, thereby reducing the frequency of the power amplifier being shut down, which not only improves the efficiency of the power amplifier, but also prolongs the service life of the power amplifier.

[0082] In some embodiments, in order to flexibly control the power mode of the power amplifier, a second temperature threshold that is less than the first temperature threshold can also be set. When the operating temperature of the power amplifier is greater than the second temperature threshold and less than or equal to the first temperature threshold, the power control module 10 can maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier to control the heating of the power amplifier and slow down the rate of increase of its operating temperature.

[0083] Optionally, the operating mode of the power amplifier may include a high power mode and a low power mode, wherein the output power of the high power mode is greater than the output power of the low power mode. When the operating temperature of the power amplifier is greater than the second temperature threshold and less than or equal to the first temperature threshold, and the current power mode of the power amplifier is the high power mode, the power control module 10 may switch the current power mode of the power amplifier to the low power mode to reduce the output power of the power amplifier, reduce the degree of heating of the power amplifier, and prevent the operating temperature of the power amplifier from continuing to rise.

[0084] When the operating temperature of the power amplifier is greater than the second temperature threshold and less than or equal to the first temperature threshold, and the current power mode of the power amplifier is a low power mode, since the heat generation of the power amplifier is relatively light in the low power mode, the power control module 10 can maintain the current power mode of the power amplifier, so that the power amplifier continues to operate in the low power mode, thereby ensuring the working efficiency of the power amplifier.

[0085] As an implementation mode, when the detection voltage is positively correlated with the operating temperature of the power amplifier, the threshold voltage corresponding to the first temperature threshold is a preset first threshold voltage, and the threshold voltage corresponding to the second temperature threshold is a second threshold voltage, wherein the second threshold voltage is less than the first threshold voltage. At this time, the control circuit 13 is used to maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier when the comparison result indicates that the detection voltage is less than or equal to the preset first threshold voltage and greater than the preset second threshold voltage.

[0086] Further, when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, if the current operating mode of the power amplifier is a high power mode, the power control module 10 switches the current power mode of the power amplifier to a low power mode to reduce the output power of the power amplifier, reduce the heat generation of the power amplifier, and prevent the operating temperature of the power amplifier from continuing to rise; if the current operating mode of the power amplifier is a low power mode, the power control module 10 maintains the current power mode of the power amplifier, so that the power amplifier continues to operate in the low power mode, thereby ensuring the working efficiency of the power amplifier.

[0087] As another implementation, when the detection voltage is negatively correlated with the operating temperature of the power amplifier, the threshold voltage corresponding to the first temperature threshold is a preset third threshold voltage, and the threshold voltage corresponding to the second temperature threshold is a fourth threshold voltage, wherein the fourth threshold voltage is greater than the third threshold voltage. At this time, the control circuit 13 is used to maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier when the comparison result indicates that the detection voltage is greater than or equal to the preset third threshold voltage and less than the preset fourth threshold voltage.

[0088] Further, when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, if the current operating mode of the power amplifier is a high power mode, the power control module 10 switches the current power mode of the power amplifier to a low power mode to reduce the output power of the power amplifier, reduce the heat generation of the power amplifier, and prevent the operating temperature of the power amplifier from continuing to rise; if the current operating mode of the power amplifier is a low power mode, the power control module 10 maintains the current power mode of the power amplifier, so that the power amplifier continues to operate in the low power mode, thereby ensuring the working efficiency of the power amplifier.

[0089] The embodiment of the present application can flexibly adjust or maintain the power mode of the power amplifier according to the current power mode of the power amplifier when the operating temperature of the power amplifier is between the first temperature threshold and the second temperature threshold, thereby ensuring the working efficiency of the power amplifier and controlling the heat generation of the power amplifier, slowing down the rate of increase of its operating temperature and making it less likely for its operating temperature to reach the critical point, thereby reducing the frequency of the power amplifier being shut down.

[0090] In some embodiments, when the operating temperature of the power amplifier is less than the second temperature threshold, the heat generation of the power amplifier is relatively mild and its operating temperature is far from the critical point. At this time, regardless of whether the power amplifier is currently in a high power mode or a low power mode, the current power mode of the power amplifier can be maintained to maintain the operating efficiency of the power amplifier.

[0091] As an implementation mode, when the detection voltage is positively correlated with the operating temperature of the power amplifier, the higher the operating temperature of the power amplifier, the greater the detection voltage. When the operating temperature of the power amplifier is less than or equal to the second temperature threshold, the detection voltage is less than or equal to the second threshold voltage corresponding to the second temperature threshold. Therefore, the control circuit 13 can maintain the current power mode of the power amplifier when the comparison result indicates that the detection voltage is less than or equal to the second threshold voltage.

[0092] As another embodiment, when the detection voltage is negatively correlated with the operating temperature of the power amplifier, the higher the operating temperature of the power amplifier, the smaller the detection voltage. When the operating temperature of the power amplifier is less than or equal to the second temperature threshold, the detection voltage is greater than or equal to a fourth threshold voltage corresponding to the second temperature threshold. Therefore, the control circuit 13 can maintain the current power mode of the power amplifier when the comparison result indicates that the detection voltage is greater than or equal to the fourth threshold voltage.

[0093] The embodiment of the present application can maintain the power mode of the power amplifier when the operating temperature of the power amplifier is less than the second temperature threshold, so as to maintain the operating efficiency of the power amplifier and improve the overall operating efficiency of the power amplifier.

[0094] In some embodiments, the control circuit 13 may output a power mode enable signal to the power amplifier to control the power mode of the power amplifier.

[0095] Optionally, the power mode enable signal may include an HPM-EN signal and an LPM-EN signal, wherein the HPM-EN signal is used to enable the high power mode of the power amplifier, and the LPM-EN signal is used to enable the low power mode of the power amplifier. Optionally, the HPM-EN signal and the LPM-EN signal may both be high level valid or low level valid. For ease of explanation, taking the HPM-EN signal and the LPM-EN signal as an example, when the power mode enable signal output by the control circuit 13 to the power amplifier is HPM-EN=1, LPM-EN=0, the power amplifier enters the high power mode according to the power mode enable signal; when the power mode enable signal output by the control circuit 13 to the power amplifier is HPM-EN=0, LPM-EN=1, the power amplifier enters the low power mode according to the power mode enable signal.

[0096] In this embodiment, the Pre-HPM-EN signal and the Pre-LPM-EN signal represent the actual current power mode of the power amplifier, and the OTP signal represents the comparison result output by the threshold comparison circuit. The control circuit 13 can receive the Pre-HPM-EN signal, the Pre-LPM-EN signal, and the OTP signal, and determine the values ​​of the HPM-EN signal and the LPM-EN signal according to the Pre-HPM-EN signal, the Pre-LPM-EN signal, and the OTP signal.

[0097] As an implementation method, when the detection voltage is positively correlated with the operating temperature, assuming that the OTP signal is a 2-bit code value, the high-order code value represents the magnitude relationship between the detection voltage and the first threshold voltage, the low-order code value represents the magnitude relationship between the detection voltage and the second threshold voltage, and the code value of 1 indicates that the detection voltage is greater than the corresponding threshold voltage, and the code value of 0 indicates that the detection voltage is less than the corresponding threshold voltage. Since the second threshold voltage is less than the first threshold voltage, OTP has three values ​​of 11, 01 and 00. OTP = 11 indicates that the detection voltage is greater than the preset first threshold voltage, OTP = 01 indicates that the detection voltage is less than the preset first threshold voltage and greater than the preset second threshold voltage, and OTP = 00 indicates that the detection voltage is less than the preset second threshold voltage. For the sake of convenience, taking Pre-HPM-EN = 1 and Pre-LPM-EN = 0 to indicate that the current actual power mode of the power amplifier is a high power mode, and Pre-HPM-EN = 0 and Pre-LPM-EN = 1 to indicate that the current actual power mode of the power amplifier is a low power mode as an example, the relationship between the values ​​of the HPM-EN signal and the LPM-EN signal and the Pre-HPM-EN signal, the Pre-LPM-EN signal and the OTP signal can be shown in Table 1 below:

[0098] Table 1

[0099]

[0100]

[0101] Among them, Pre-HPM-EN = 0 and Pre-LPM-EN = 0 indicate that the actual current power mode of the power amplifier is neither the high power mode nor the low power mode, that is, the power amplifier is currently in the off state. HPM-EN = 0 and LPM-EN = 0 indicate that neither the high power mode nor the low power mode is enabled, that is, the power amplifier is turned off.

[0102] As another implementation, when the detection voltage is negatively correlated with the operating temperature, assuming that the OTP signal is a 2-bit code value, the low-order code value represents the magnitude relationship between the detection voltage and the third threshold voltage, the high-order code value represents the magnitude relationship between the detection voltage and the fourth threshold voltage, and the code value of 1 indicates that the detection voltage is greater than the corresponding threshold voltage, and the code value of 0 indicates that the detection voltage is less than the corresponding threshold voltage. Since the third threshold voltage is less than the fourth threshold voltage, the OTP signal has three values ​​of 11, 01 and 00, OTP = 11 indicates that the detection voltage is greater than the preset fourth threshold voltage, OTP = 01 indicates that the detection voltage is greater than the preset third threshold voltage and less than the preset fourth threshold voltage, and OTP = 00 indicates that the detection voltage is less than the preset third threshold voltage. For the sake of convenience, it is also taken that Pre-HPM-EN=1 and Pre-LPM-EN=0 indicate that the current actual power mode of the power amplifier is the high power mode, and Pre-HPM-EN=0 and Pre-LPM-EN=1 indicate that the current actual power mode of the power amplifier is the low power mode as an example, then the relationship between the values ​​of the HPM-EN signal and the LPM-EN signal and the Pre-HPM-EN signal, the Pre-LPM-EN signal and the OTP signal can be shown in the following Table 2:

[0103] Table 2

[0104]

[0105] Among them, Pre-HPM-EN = 0 and Pre-LPM-EN = 0 indicate that the actual current power mode of the power amplifier is neither the high power mode nor the low power mode, that is, the power amplifier is currently in the off state. HPM-EN = 0 and LPM-EN = 0 indicate that neither the high power mode nor the low power mode is enabled, that is, the power amplifier is turned off.

[0106] It can be understood that when the operating temperature of the power amplifier is low, for example, below the second temperature threshold, the power mode of the power amplifier can be set according to the needs of the application scenario. Exemplarily, the corresponding Pre-HPM-EN signal and Pre-LPM-EN signal can be generated based on the needs of the terminal using the power amplifier based on the usage scenario. For example, in a mobile terminal, the corresponding Pre-HPM-EN signal and Pre-LPM-EN signal can be generated based on the distance between the mobile terminal and the corresponding base station: when the mobile terminal is close to the corresponding base station, the power amplifier can work in a low-power working mode to meet the use requirements, and a signal of Pre-HPM-EN=0, Pre-LPM-EN=1 can be generated; when the mobile terminal is far away from the corresponding base station, the power amplifier needs to enter a high-power working mode, and a signal of Pre-HPM-EN=1, Pre-LPM-EN=0 can be generated.

[0107] In an embodiment of the present application, the power mode of the power amplifier is controlled by enable signals HPM-EN and LPM-EN, and the HPM-EN signal and the LPM-EN signal can be obtained by performing simple logic gate operations on the Pre-HPM-EN signal, the Pre-LPM-EN signal and the OTP signal through the basic logic gate circuit in the chip, without adding additional circuits, thereby being able to control the power mode of the power amplifier without increasing additional costs.

[0108] Optionally, the power amplifier can use HBT (heterojunction bipolar transistor), CMOS (complementary metal oxide semiconductor transistor) or HEMT (high electron mobility transistor) as the amplifying transistor, also known as the power tube. The power tube requires a certain DC voltage and / or DC current when working, which is called the bias signal. The bias signal of the power tube is usually provided by a bias circuit.

[0109] As an implementation mode, the power control module 10 further includes a bias circuit, which is used to adjust the bias current or bias voltage output to the power tube according to the HPM-EN signal and the LPM-EN signal, thereby realizing the switching of the power mode.

[0110] In some embodiments, Figure 2As shown, the power control module 10 may also include a scaling circuit 14, which is connected to the temperature detection circuit 11 and is used to reduce or amplify the detection voltage output by the temperature detection circuit. Specifically, the scaling circuit 14 is connected between the output end of the temperature detection circuit 11 and an input end of the threshold comparison circuit to transmit the reduced or amplified detection voltage to the threshold comparison circuit. Accordingly, the threshold comparison circuit 12 is used to compare the detection voltage reduced or amplified by the scaling circuit 14 with at least one of the above-mentioned threshold voltages, and output the comparison result.

[0111] On the one hand, when the detection voltage generated by the temperature detection circuit 11 exceeds the operating voltage range of the threshold comparison circuit, the detection voltage output by the temperature detection circuit 11 is reduced or amplified by the scaling circuit 14, so that it can match the input voltage range of the threshold comparison circuit, thereby ensuring that the threshold comparison circuit can work normally. For example, when the input voltage upper limit of the threshold comparison circuit is 3.5V, if the detection voltage generated by the temperature detection circuit 11 exceeds 3.5V, the detection voltage can be reduced to within 3.5V by the scaling circuit 14 to adapt to the input voltage range of the threshold comparison circuit.

[0112] On the other hand, when the detection voltage generated by the temperature detection circuit 11 does not match the threshold voltage of the threshold comparison circuit at a specific temperature point, the detection voltage output by the temperature detection circuit 11 is reduced or amplified by the scaling circuit 14, so that the detection voltage at the temperature point can be adjusted to be the same as the corresponding threshold voltage, so that the threshold comparison circuit 12 can output the required comparison result. For example, when the operating temperature of the power amplifier is greater than the first temperature threshold, the threshold comparison circuit needs to receive a detection voltage greater than the first threshold voltage or less than the third threshold voltage to output the required comparison result, and when the detection voltage generated by the temperature detection circuit 11 does not meet this condition, the detection voltage output by the temperature detection circuit 11 can be reduced or amplified by the scaling circuit 14 so that at the first temperature threshold, the scaled detection voltage received by the threshold comparison circuit is equal to the first threshold voltage or the third threshold voltage.

[0113] Optionally, the scaling circuit 14 can adopt a common-phase amplifier circuit or an inverting amplifier circuit. When a common-phase amplifier circuit is adopted, the output signal of the scaling circuit 14 has the same phase as the input signal; when an inverting amplifier circuit is adopted, the output signal of the scaling circuit 14 has an opposite phase to the input signal. Regardless of whether a common-phase amplifier circuit or an inverting amplifier circuit is adopted, the gain of the scaling circuit 14 depends on the ratio of the feedback resistor to the input resistor, and the gain can be greater than 1 or less than or equal to 1. Therefore, feedback resistors and input resistors with appropriate resistance values ​​can be selected as needed to obtain the desired gain. Taking the inverting amplifier circuit as an example, if Figure 3As shown, the magnification factor V of the scaling circuit 14 T2 / V T1 =Rf / R1, where V T1 is the detection voltage before being reduced or amplified by the scaling circuit 14, that is, the detection voltage output by the temperature detection circuit; V T2 is the detection voltage after being reduced or amplified by the scaling circuit 14, that is, the detection voltage received by the threshold comparison circuit. When Rf is greater than R1, the amplification factor of the scaling circuit 14 is greater than 1, and the detection voltage output by the temperature detection circuit can be amplified; when Rf is less than R1, the amplification factor of the scaling circuit 14 is less than 1, and the detection voltage output by the temperature detection circuit can be reduced.

[0114] As an implementation method, Figure 4 As shown, at least one of the resistor Rf and the resistor R1 can be a variable resistor, so that the amplification factor of the scaling circuit 14 is adjustable. In this way, the scaled detection voltage V can be flexibly adjusted according to application needs. T2 The slope of the curve between the temperature T and the threshold voltage is adjusted, so that the temperature value T corresponding to each threshold voltage of the threshold comparison circuit can be adjusted to adapt to power amplifiers with different heat resistance characteristics. For example, for some power amplifiers with poor heat resistance characteristics, it is required to shut down the power amplifier when the operating temperature reaches 135°C. Then, the resistance value of at least one of the resistors Rf and R1 can be adjusted so that the amplification factor Rf / R1 of the scaling circuit 14 can adjust the detection voltage V at 135°C. T1(135℃) For some power amplifiers with good heat resistance, it is required to shut down the power amplifier when the operating temperature reaches 150°C. Then, the resistance value of at least one of the resistors Rf and R1 can be adjusted so that the amplification factor Rf / R1 of the scaling circuit 14 can adjust the detection voltage V at 150°C. T1(150℃) Scaled to be equal to the first threshold voltage.

[0115] In some embodiments, the temperature detection circuit 11 may receive a current with a temperature coefficient, and generate a detection voltage that is positively correlated or negatively correlated with the operating temperature of the power amplifier based on the current with the temperature coefficient.

[0116] As an implementation method, Figure 5 As shown, the temperature detection circuit includes a detection resistor R T1 , the detection resistor R T1 The first end is used to receive a current I having a temperature coefficient T , the detection resistor R T1 The second end of the detection resistor is grounded; wherein the first end of the detection resistor is the output end of the temperature detection circuit. In this example, the current I T Flowing through the detection resistor R T1 , the detection resistor RT1 The voltage drop V across the two ends of T =I T *R T1 , due to the detection resistor R T1 The second end of the detection resistor R T1 The detection voltage output from the first end is the detection resistor R T1 The voltage drop across the two ends is V T Optionally, the current I T It can have a positive temperature coefficient or a negative temperature coefficient. T When the current I T With a negative temperature coefficient, the generated sense voltage is inversely related to the operating temperature of the power amplifier.

[0117] In one example, the sense resistor R T1 It can be a variable resistor so that based on the detection resistor R T1 The generated detection voltage V T The ratio between the threshold voltage and the temperature value T is adjustable, so that the temperature value T corresponding to each threshold voltage of the threshold comparison circuit can be flexibly adjusted according to application requirements to adapt to power amplifiers with different heat resistance characteristics.

[0118] As another embodiment, Figure 6 As shown, the temperature detection circuit includes a voltage-dividing resistor string, a first end of which is used to receive a voltage V having a temperature coefficient. T－in , the second end of the voltage-dividing resistor string is grounded. The voltage-dividing resistor string also includes an output node a. The resistance between the output node a and the first end of the voltage-dividing resistor string is Ra1, and the resistance between the output node a and the ground is Ra2. The voltage output by the output node is the detection voltage V T =Ra2 / (Ra1+Ra2)*V T－in Optionally, the voltage V T－in It can have a positive temperature coefficient or a negative temperature coefficient. T－in When the voltage V T－in With a negative temperature coefficient, the generated sense voltage is inversely related to the operating temperature of the power amplifier.

[0119] In one example, at least one of the resistance Ra1 and the resistance Ra2 in the voltage-dividing resistor string is adjustable so that the detection voltage V generated by the voltage division based on the resistance Ra1 and the resistance Ra2 is TThe ratio between the threshold voltage and the temperature value T is adjustable, so that the temperature value T corresponding to each threshold voltage of the threshold comparison circuit can be flexibly adjusted according to application requirements to adapt to power amplifiers with different heat resistance characteristics.

[0120] As an implementation method, the current I having a temperature coefficient T or voltage V T－in It can be taken from the bandgap reference circuit. The bandgap reference circuit is a basic circuit module in the chip, which can provide a reference voltage for other circuit modules in the chip. For example, each threshold voltage of the threshold comparison circuit 12 can be based on the bandgap reference voltage V output by the bandgap reference circuit. BG The bandgap reference circuit usually generates a current or voltage with a positive temperature coefficient and a current or voltage with a negative temperature coefficient through the circuit, and then superimposes the two according to a certain proportional coefficient to obtain a bandgap reference voltage V with almost zero temperature coefficient. BG The detection voltage V is generated by multiplexing the current or voltage with a temperature coefficient generated by the bandgap reference circuit. T , which can simplify the circuit structure of the temperature detection circuit 11 and reduce the circuit cost.

[0121] As an implementation method, the temperature detection circuit 11 and the bandgap reference circuit may be integrated into the same chip to reduce the area of ​​the temperature detection circuit 11 .

[0122] In some embodiments, the temperature detection circuit 11 may detect the operating temperature of the power amplifier through at least one temperature sensitive element.

[0123] As an implementation method, Figure 7 , 8 As shown, the temperature detection circuit 11 includes a first current source 111 and a temperature detection element 112. The first current source 111 is used to output a first current I1; the temperature detection element 112 is connected to the first current source and is used to generate a detection voltage V having a temperature coefficient based on the first current. T Optionally, the temperature detection element 112 may be an element with positive temperature characteristics or an element with negative temperature characteristics. When the temperature detection element 112 has positive temperature characteristics, the detection voltage output by the temperature detection circuit 11 has a positive temperature coefficient; when the temperature detection element 112 has negative temperature characteristics, the detection voltage output by the temperature detection circuit 11 has a negative temperature coefficient.

[0124] As an example, Figure 7As shown, the temperature detection element is a diode, the anode of the diode is connected to the output end of the first current source, and the cathode of the diode is grounded. The diode is an element with a negative temperature characteristic. After the first current I1 flows through the diode, a detection voltage V with a negative temperature coefficient is generated at the anode of the diode. T .

[0125] As an example, Figure 8 As shown, the temperature detection element is a triode, the base and collector of the triode are respectively connected to the output end of the first current source, and the emitter of the triode is grounded. Among them, the voltage V between the base and emitter of the triode BE With a negative temperature coefficient, since the emitter is grounded, after the first current I1 flows through the transistor, a detection voltage V with a negative temperature coefficient is generated at the base of the transistor. T =V BE .

[0126] As an example, the temperature detection element includes two transistors, using V between the two transistors. BE Voltage difference ΔV BE Positive temperature characteristics can obtain a detection voltage V with a positive temperature coefficient T .

[0127] As an implementation mode, the first current source is an adjustable current source, and the first current I1 outputted by the first current source is an adjustable current. Then the detection voltage V generated based on the first current I1 is T The ratio between the threshold voltage and the temperature value T is adjustable, so that the temperature value T corresponding to each threshold voltage of the threshold comparison circuit can be flexibly adjusted according to application requirements to adapt to power amplifiers with different heat resistance characteristics.

[0128] Optionally, the temperature detection circuit 11 in the above embodiment may be integrated into a chip to reduce the area of ​​the temperature detection circuit 11 .

[0129] In other embodiments, Fig. 9 As shown, the temperature detection circuit 11 includes a second current source 113 and a thermistor 114, wherein: the second current source 113 is used to output a second current I2; the thermistor 114 is connected to the second current source 113 to generate a detection voltage with a temperature coefficient based on the second current I2.

[0130] Optionally, the thermistor 114 may be a positive temperature coefficient thermistor, in which case the detection voltage generated by the temperature detection circuit 11 is a voltage with a positive temperature coefficient; conversely, the thermistor 114 may be a negative temperature coefficient thermistor, in which case the detection voltage generated by the temperature detection circuit 11 is a voltage with a negative temperature coefficient.

[0131] As an implementation mode, the second current source is an adjustable current source, and the second current I2 outputted by the second current source is an adjustable current. Then the detection voltage V generated based on the second current I2 is T The ratio between the threshold voltage and the temperature value T is adjustable, so that the temperature value T corresponding to each threshold voltage of the threshold comparison circuit can be flexibly adjusted according to application requirements to adapt to power amplifiers with different heat resistance characteristics.

[0132] Optionally, the second current source 113 in the temperature detection circuit 11 can be arranged inside the chip, and the thermistor 114 can be arranged outside the chip, and the second current source 113 is connected to the thermistor 114 through the pins of the chip. The thermistor 114 can be arranged near the power amplifier to improve the detection sensitivity of the operating temperature of the power amplifier.

[0133] The power control module of the power amplifier provided in the embodiment of the present application can detect the operating temperature of the power amplifier and generate a detection voltage related to the operating temperature, compare the detection voltage with one or more preset threshold voltages, and control the power mode of the power amplifier according to the magnitude relationship between the detection voltage and at least one threshold voltage, thereby realizing flexible control of the power mode according to the operating temperature of the power amplifier. The embodiment of the present application can delay the heating of the power amplifier before the operating temperature of the power amplifier reaches the critical point, so that the operating temperature is not easy to reach the critical point, thereby reducing the frequency of the power amplifier being shut down, improving the efficiency of the power amplifier, and extending the service life of the power amplifier.

[0134] The present application also provides a radio frequency front-end module, such as Fig.10 As shown, the RF front-end module 20 includes a substrate 21 and a first chip 22, and the RF front-end module 20 also includes a power amplifier PA and a power control module 10. The power amplifier PA is integrated inside the first chip 22, and the power control module 10 is arranged on the substrate 21.

[0135] The power control module 10 of the embodiment of the present application can be implemented in the manner described in any of the aforementioned embodiments, which will not be described in detail here.

[0136] As an implementation method, Fig.11 As shown, a second chip 23 is also provided on the substrate, and the power control module 10 is integrated inside the second chip 23. The second chip 23 can be provided adjacent to the first chip 22, so that the temperature detection circuit inside the second chip 23 can detect the operating temperature of the power amplifier PA inside the first chip 22.

[0137] As an implementation method, the temperature detection circuit can be implemented as follows Figure 5The circuit structure shown in -9 is implemented. Its specific implementation method can refer to the introduction of the aforementioned embodiment and will not be repeated here.

[0138] As an implementation method, Fig.12 As shown, a second chip 23 is also disposed on the substrate, and part of the circuits in the power control module 10 are integrated inside the second chip 23, while other part of the circuits are directly disposed on the substrate. For example, when the power control module 10 includes a thermistor, the thermistor can be directly disposed on the substrate, and other circuit components except the thermistor are integrated inside the second chip 23.

[0139] As an implementation mode, the first chip 22 and the second chip 23 are both bare chips (Die), the substrate 21 is a packaging substrate, and the RF front-end module also includes a packaging shell, and the first chip 22 and the second chip 23 are packaged on the substrate 21 through the packaging shell.

[0140] The RF front-end module provided in the embodiment of the present application can flexibly control its power mode according to the operating temperature of the power amplifier, and can delay the heating of the power amplifier before the operating temperature of the power amplifier reaches the critical point, so that its operating temperature is not easy to reach the critical point, thereby reducing the frequency of the power amplifier being shut down, improving the efficiency of the power amplifier, and extending the service life of the power amplifier.

[0141] The present application also provides a radio frequency front-end module, such as Fig.13 and Fig.14 As shown, the RF front-end module 30 includes a substrate 31, a first chip 32 and a second chip 33, wherein the first chip 32 is internally integrated with a power amplifier PA, and the second chip 33 is internally integrated with a temperature detection circuit 331, the temperature detection circuit 331 is used to detect the operating temperature of the power amplifier PA and generate a detection voltage V related to the operating temperature. T The substrate 31 has a mounting surface 311, at least part of the mounting surface 311 is provided with a metal layer 34, and the first chip 32 and the second chip 33 are spaced apart and arranged on the metal layer 34. Optionally, the metal layer can be made of metal or alloy such as copper, aluminum or tin.

[0142] Since the metal layer has good thermal conductivity, when the power amplifier PA inside the first chip 32 is working, the heat it generates can be quickly conducted to the second chip 33 located on the same metal layer, thereby improving the sensitivity of the temperature detection circuit 331 inside the second chip 33 to detect the operating temperature of the power amplifier PA.

[0143] As an implementation manner, the first chip 32 and the second chip 33 are adjacent to each other to further accelerate the temperature conduction between the second chip 33 and the first chip 32 .

[0144] As an implementation method, Fig.15 As shown, the power amplifier PA is arranged in the first area 321 of the first chip 32, and the second chip 33 is arranged adjacent to the first area of ​​the first chip 32 to enhance the temperature detection sensitivity of the power amplifier PA, thereby being able to more accurately control the power mode of the power amplifier PA.

[0145] Typically, a metal foil layer for grounding is provided on the substrate 31. As an implementation, the metal layer 34 may be a metal foil layer for grounding on the substrate. By reusing the grounded metal foil layer, the volume of the RF front-end module can be reduced, and the hardware cost can be reduced.

[0146] As an implementation mode, the first chip 32 and the second chip 33 are both bare chips (Die), the substrate 31 is a packaging substrate, and the RF front-end module also includes a packaging shell, and the first chip 32 and the second chip 33 are packaged on the substrate 31 through the packaging shell.

[0147] As an implementation method, the temperature detection circuit can be implemented as follows Figure 5 The circuit structure shown in -9 is implemented. Its specific implementation method can refer to the introduction of the aforementioned embodiment and will not be repeated here.

[0148] The RF front-end module of the embodiment of the present application can quickly transfer the heat generated by the power amplifier PA to the temperature detection circuit 331, thereby improving the sensitivity of the temperature detection circuit 331 to detect the operating temperature of the power amplifier PA.

[0149] The present application also provides a radio frequency front-end module, such as Fig.16 As shown, the RF front-end module 10 includes a substrate 41, a first chip 42 and a second chip 43. The first chip integrates a power amplifier, and the second chip integrates a temperature detection circuit, which is used to detect the operating temperature of the power amplifier.

[0150] As an implementation mode, the first chip 42 and the second chip 43 are both bare chips (Die), the substrate 41 is a packaging substrate, and the RF front-end module also includes a packaging shell, and the first chip 42 and the second chip 43 are packaged on the substrate 41 through the packaging shell.

[0151] In the embodiment of the present application, the first chip 42 and the second chip 43 are stacked on the substrate 41. When the power amplifier in the first chip 42 generates a high temperature during operation, since the first chip 42 and the second chip 43 are stacked on each other and have direct or indirect contact, the temperature of the first chip 42 can be quickly transmitted to the second chip 43 and detected by the temperature detection circuit in the second chip 43, thereby improving the temperature detection sensitivity of the temperature detection circuit to the power amplifier. In addition, the first chip 42 and the second chip 43 are stacked in a direction perpendicular to the substrate, which cleverly utilizes the space in the direction perpendicular to the substrate, reduces the area occupied by the chip on the surface of the substrate, and is conducive to the miniaturization design of the RF front-end module.

[0152] Optionally, starting from the substrate, the stacking order of the first chip 42 and the second chip 43 on the substrate can be substrate 41, first chip 42, second chip 43; or substrate 41, second chip 43, first chip 42, which is not limited in this application.

[0153] In one embodiment, Fig.16 As shown, the substrate 41 includes a mounting surface 411 , and the first chip 42 includes a first surface 421 and a second surface 422 oppositely disposed, wherein the first surface 421 of the first chip 42 is disposed on the mounting surface 411 of the substrate 41 , and the second chip 43 is stacked on the second surface 422 of the first chip 42 .

[0154] In this embodiment, the first chip 42 integrated with the power amplifier is disposed on the substrate 41 , which can facilitate heat dissipation of the power amplifier through the substrate 41 and prevent the power amplifier from being damaged due to overheating.

[0155] As an implementation manner, the mounting surface 411 of the substrate 41 is further provided with a metal foil layer, and the first surface 421 of the first chip 42 can be disposed on the metal foil layer to further accelerate the heat dissipation of the first chip 42 .

[0156] Optionally, the metal foil layer can also be used for grounding. By reusing the metal foil layer as a grounding layer, the volume of the RF front-end module can be reduced and the hardware cost can be reduced.

[0157] In one embodiment, Fig.17 As shown, the substrate 41 includes a mounting surface 411 , and the second chip 43 includes a third surface 431 and a fourth surface 432 that are oppositely arranged, wherein the third surface 431 of the second chip 43 is arranged on the mounting surface 411 of the substrate 41 , and the first chip 42 is stacked on the second surface 432 of the second chip 43 .

[0158] As an implementation manner, the mounting surface 411 of the substrate 41 is further provided with a metal foil layer, and the third surface 431 of the second chip 42 can be disposed on the metal foil layer to further accelerate the heat dissipation of the second chip 43 .

[0159] Optionally, the metal foil layer can also be used for grounding. By reusing the metal foil layer as a grounding layer, the volume of the RF front-end module can be reduced and the hardware cost can be reduced.

[0160] As an embodiment, the first chip 42 and the second chip 43 can be in direct contact with each other, that is, the second chip 43 can be directly stacked on the surface of the first chip 42, or the first chip 42 can be directly stacked on the surface of the second chip 43. In this way, the height of the RF front-end module in the direction perpendicular to the substrate can be reduced, and the volume of the RF front-end module can be reduced.

[0161] As an implementation method, the first chip 42 and the second chip 43 may not be in direct contact with each other. Fig.18 and Fig.19 As shown, the RF front-end module 10 may further include a connection layer 44 , and the first chip 42 and the second chip 43 are connected to each other through the connection layer 44 .

[0162] In order to speed up the temperature conduction between the first chip 42 and the second chip 43, the connection layer 44 may be a thermally conductive adhesive layer, that is, the connection layer 44 may be made of a thermally conductive adhesive material, such as at least one of silicone thermally conductive adhesive, epoxy resin AB adhesive, acrylic thermally conductive adhesive, or polyurethane thermally conductive adhesive.

[0163] By connecting the first chip 42 and the second chip 43 through the thermal conductive adhesive layer, the temperature conduction speed between the first chip 42 and the second chip 43 can be further improved, and the temperature detection sensitivity of the temperature detection circuit to the power amplifier can be further improved.

[0164] Optionally, the first chip 42 or the second chip 43 may be fixed to the substrate by wire bonding, or may be connected to the substrate by flip-chip bonding.

[0165] As an example, take the order of stacking the first chip 42 and the second chip 43 on the substrate 41 in sequence as an example. Fig. 20 As shown, the RF front-end module 10 also includes a plurality of bonding wires 45, and the first chip 42 is bonded to the substrate 41 through the bonding wires 45. Specifically, the first chip 42 has a plurality of pins (pads), and each pin is connected to the substrate through a bonding wire. In this example, the first chip 42 is fixed to the substrate by a wire bonding packaging method. The finished product of this packaging method has good corrosion resistance, shock resistance and stability, so the packaged RF front-end module has good stability.

[0166] Still taking the order of stacking the first chip 42 and the second chip 43 on the substrate in sequence as an example, Fig.21 As shown, a bump 423 grows on the surface of the first chip 42, and the first chip 42 is turned upside down so that the bump 423 on its surface is fixedly connected to the substrate 41. By packaging the bump to the substrate, it is beneficial to reduce the lateral area of ​​the RF front-end module. In this example, the first chip 42 is fixed to the substrate by a flip-chip packaging method. Compared with the wire bonding method, this packaging method occupies a smaller area and can further reduce the volume of the RF front-end module.

[0167] The RF front-end module of the embodiment of the present application stacks a first chip integrated with a power amplifier and a second chip integrated with a temperature detection circuit, so that the first chip and the second chip have direct or indirect contact, and the operating temperature of the power amplifier inside the first chip can be quickly transmitted to the second chip and detected by the temperature detection circuit in the second chip, thereby improving the temperature detection sensitivity of the temperature detection circuit to the power amplifier.

[0168] The above is only a preferred implementation of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present application. These improvements and substitutions should also be regarded as the scope of protection of the present application.

Claims

1. A power control module of a power amplifier, characterized in that: The power control module or part of the circuit in the power control module is integrated in the second chip, and the power control module includes: a temperature detection circuit, used for detecting an operating temperature of a power amplifier in the first chip and generating a detection voltage related to the operating temperature; A threshold comparison circuit, used for comparing the detection voltage with at least one preset threshold voltage and outputting a comparison result, wherein the comparison result is used for indicating a magnitude relationship between the detection voltage and the preset threshold voltage; A control circuit is used to control the power mode of the power amplifier according to the comparison result.

2. The power control module according to claim 1, characterized in that: The control circuit is used to output a power mode enable signal to the power amplifier according to the comparison result, so as to control the power mode of the power amplifier.

3. The power control module according to claim 2, characterized in that: The power amplifier includes an amplifying transistor; The power control module further includes a bias circuit, and the bias circuit is used to adjust the bias current or bias voltage output to the amplifying transistor according to the power mode enable signal to switch the power mode of the power amplifier.

4. The power control module according to claim 1, characterized in that: The power amplifier includes an amplifying transistor, and the amplifying transistor is a heterojunction bipolar transistor or a high electron mobility transistor.

5. The power control module according to claim 1, characterized in that: The detection voltage is positively correlated with the operating temperature, and the control circuit is further used to: turn off the power amplifier when the comparison result indicates that the detection voltage is greater than a preset first threshold voltage; or, The detection voltage is negatively correlated with the operating temperature, and the control circuit is further configured to: shut down the power amplifier when the comparison result indicates that the detection voltage is less than a preset third threshold voltage.

6. The power control module according to claim 5, characterized in that: When the operating temperature of the power amplifier exceeds a first temperature threshold, the detection voltage is greater than the first threshold voltage or less than the third threshold voltage.

7. The power control module according to claim 1, characterized in that: The control circuit is also used for: When the operating temperature of the power amplifier does not exceed a first temperature threshold, the power mode of the power amplifier is maintained or switched according to the comparison result and the current power mode of the power amplifier.

8. The power control module according to claim 7, characterized in that: The detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier; or, The detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, maintain or switch the power mode of the power amplifier according to the current power mode of the power amplifier.

9. The power control module according to claim 8, characterized in that: When the detection voltage is positively correlated with the operating temperature of the power amplifier, the first threshold voltage is a threshold voltage corresponding to a first temperature threshold, and the second threshold voltage is a threshold voltage corresponding to a second temperature threshold; or, When the detection voltage is negatively correlated with the operating temperature of the power amplifier, the third threshold voltage is a threshold voltage corresponding to the first temperature threshold, and the fourth threshold voltage is a threshold voltage corresponding to the second temperature threshold; The second temperature threshold is lower than the first temperature threshold.

10. The power control module according to claim 8, characterized in that: The detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, and the current power mode of the power amplifier is a high power mode, switch the power mode of the power amplifier to a low power mode; or, The detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, and the current power mode of the power amplifier is a high power mode, switch the power mode of the power amplifier to a low power mode; The output power of the high power mode is greater than the output power of the low power mode.

11. The power control module according to claim 8, characterized in that: The detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to a preset first threshold voltage and greater than a preset second threshold voltage, and the current power mode of the power amplifier is a low power mode, maintain the current power mode of the power amplifier; or, The detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: maintain the current power mode of the power amplifier when the comparison result indicates that the detection voltage is greater than or equal to a preset third threshold voltage and less than a preset fourth threshold voltage, and the current power mode of the power amplifier is a low power mode.

12. The power control module according to claim 8, characterized in that: The detection voltage is positively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is less than or equal to the second threshold voltage, maintain the current power mode of the power amplifier; or, The detection voltage is negatively correlated with the operating temperature, and the control circuit is used to: when the comparison result indicates that the detection voltage is greater than or equal to the fourth threshold voltage, maintain the current power mode of the power amplifier.

13. The power control module according to any one of claims 1 to 12, characterized in that: The power control module also includes: A scaling circuit, connected to the temperature detection circuit, for reducing or amplifying the detection voltage; The threshold comparison circuit is further used to compare the reduced or amplified detection voltage with at least one preset threshold voltage and output a comparison result.

14. The power control module according to claim 13, characterized in that: The scaling circuit includes at least one variable resistor so that the amplification factor of the scaling circuit is adjustable.

15. The power control module according to any one of claims 1 to 12, characterized in that: The temperature detection circuit comprises: A detection resistor, wherein a first end of the detection resistor is used to receive a current having a temperature coefficient, and a second end of the detection resistor is grounded; Wherein, the first end of the detection resistor is the output end of the temperature detection circuit.

16. The power control module according to claim 15, characterized in that: The detection resistor is an adjustable resistor.

17. The power control module according to any one of claims 1 to 12, characterized in that: The temperature detection circuit comprises: A first current source, configured to output a first current; A temperature detection element is connected to the first current source and is used to generate a detection voltage with a temperature coefficient based on the first current.

18. The power control module according to claim 17, characterized in that: The temperature detection element is a diode, the anode of the diode is connected to the output end of the first current source, and the cathode of the diode is grounded; or, The temperature detection element is a triode, the base and collector of the triode are respectively connected to the output end of the first current source, and the emitter of the triode is grounded.

19. The power control module according to claim 17, characterized in that: The first current source is an adjustable current source, configured to output an adjustable first current.

20. The power control module according to claim 1, characterized in that: The temperature detection circuit comprises: A second current source, used for outputting a second current; The thermistor is connected to the second current source and is used to generate a detection voltage with a temperature coefficient based on the second current.

21. The power control module according to claim 20, characterized in that: All components in the power control module except the thermistor are integrated in the second chip.

22. A radio frequency front-end module, characterized in that: include: substrate; A power amplifier, integrated in a first chip, wherein the first chip is disposed on the substrate; The power control module according to any one of claims 1 to 21 is arranged on the substrate.

23. The radio frequency front-end module according to claim 22, characterized in that: The substrate is further provided with a second chip, and the power control module is integrated in the second chip; or, The thermistor in the power control module is arranged on the substrate, and all components in the power control module except the thermistor are integrated in the second chip.

24. A radio frequency front-end module, characterized in that: include: substrate; A power amplifier, integrated in the first chip; A power control module is integrated in the second chip, and the power control module includes: a temperature detection circuit, used for detecting the operating temperature of the power amplifier and generating a detection voltage related to the operating temperature; A threshold comparison circuit, used for comparing the detection voltage with at least one preset threshold voltage and outputting a comparison result, wherein the comparison result is used for indicating a magnitude relationship between the detection voltage and the preset threshold voltage; A control circuit is used to control the power mode of the power amplifier according to the comparison result.

25. The radio frequency front-end module according to claim 24, characterized in that: A metal layer is disposed on at least a portion of the surface of the substrate, and the first chip and the second chip are disposed on the metal layer with an interval therebetween.

26. A radio frequency front-end module, characterized in that: include: substrate; A power amplifier, integrated in the first chip; A temperature detection circuit, used for detecting the operating temperature of the power amplifier and generating a detection voltage related to the operating temperature, wherein the temperature detection circuit is integrated in the second chip; A metal layer is disposed on at least a portion of the surface of the substrate, wherein the first chip and the second chip are disposed on the metal layer with an interval therebetween.

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