Quantum dot infrared detector and manufacturing method thereof

Abstract

The present invention discloses a quantum dot infrared detector, which comprises a substrate, a quantum dot layer arranged on the substrate, and a first superlattice layer between the substrate and the quantum dot layer; wherein, when the quantum dot layer and the substrate are under compressive strain, the first superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the first superlattice layer and the substrate are under compressive strain. The present invention compensates for the strain presented by the quantum dot layer and the substrate by forming a superlattice layer that is strained opposite to the strain presented by the quantum dot layer and the substrate, thereby improving the performance of the quantum dot infrared detector.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and in particular, relates to a quantum dot infrared detector and a manufacturing method thereof. Background Art

[0002] Quantum dot infrared detectors have the advantages of low dark current, high operating temperature, fast response speed, high detection efficiency, and also have the characteristics of responding to vertically incident light and longer effective carrier lifetime, so they have become a research hotspot.

[0003] Quantum dot infrared detectors (QDIPs) were first demonstrated by Phillips et al. in 1998. Quantum dot infrared detectors are similar to quantum well infrared detectors in structure and principle. Quantum well detectors mainly use interband transitions. Under the action of an external electric field, carriers are collected to form photocurrents for detection. The working principle of quantum dot infrared detectors is to use the three-dimensional quantum confinement effect of quantum dots. When electrons in the bound state of quantum dots are excited by light, they will be collected to form photocurrents under the action of the electric field formed by the external bias voltage.

[0004] Quantum dot infrared detectors have many advantages: first, quantum dots have a three-dimensional confinement effect on electrons and can respond to vertically incident light; second, quantum dots have a longer effective carrier lifetime and a longer electron relaxation time, and photoexcited electrons are more easily collected to form photocurrent, which is beneficial to improving the response rate and gain; third, quantum dot infrared detectors have a small dark current and can achieve high operating temperatures, high response rates and detection rates.

[0005] However, in the existing InAs quantum dot infrared detectors, during the epitaxial growth process of the quantum dot structure, the lattice mismatch between the InAs quantum dot epitaxial layer and the GaAs substrate causes strain in the epitaxial layer and generates stress. This stress is also the driving force that causes the epitaxial layer to transform from two-dimensional to three-dimensional and form quantum dots. The stress and its distribution in the system determine the shape, size, distribution, etc. of the quantum dots, thereby affecting the state density and band structure of the electrons in the quantum dots. At the same time, stress may also cause defects and dislocations in the material. When the epitaxial layer transforms from two-dimensional to three-dimensional during the growth of quantum dots, most of the stress is released to keep the energy of the entire system at a lower value. In multi-layer quantum dots, the residual stress in each layer will gradually accumulate as the number of layers increases. The accumulated stress will lead to the generation of many defects and dislocations, and the quality of the quantum dots will deteriorate layer by layer, thereby affecting the performance of the InAs quantum dot infrared detector. Summary of the invention

[0006] In order to solve the technical problems existing in the above-mentioned prior art, the present invention provides a quantum dot infrared detector capable of compensating for the strain occurring between an InAs quantum dot epitaxial layer and a GaAs substrate and a method for manufacturing the same.

[0007] According to one aspect of the present invention, a quantum dot infrared detector is provided, which includes a substrate and a quantum dot layer arranged on the substrate, and the quantum dot infrared detector also includes: a first superlattice layer between the substrate and the quantum dot layer; wherein, when the quantum dot layer and the substrate are under compressive strain, the first superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the first superlattice layer and the substrate are under compressive strain.

[0008] In an example of the quantum dot infrared detector provided in the above aspect, the quantum dot infrared detector also includes: a second superlattice layer on the side of the quantum dot layer facing away from the substrate; wherein, when the quantum dot layer and the substrate are under compressive strain, the second superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the second superlattice layer and the substrate are under compressive strain.

[0009] In an example of the quantum dot infrared detector provided in the above aspect, the quantum dot infrared detector also includes: a buffer layer, a first confinement layer and a first waveguide layer stacked between the substrate and the first superlattice layer and included in sequence from the substrate to the first superlattice layer; a first barrier layer and a quantum well layer stacked between the first superlattice layer and the quantum dot layer and included in sequence from the first superlattice layer to the quantum dot layer; a second barrier layer between the quantum dot layer and the second superlattice layer; a second waveguide layer, a second confinement layer and a contact layer on the side of the second superlattice layer facing away from the second barrier layer and stacked in sequence away from the second superlattice layer; a first electrode on the substrate facing away from the buffer layer and a second electrode on the contact layer.

[0010] In an example of the quantum dot infrared detector provided in the above aspect, the substrate is a GaAs substrate, and the first superlattice layer and / or the second superlattice layer is an Al x Ga 1-x InP / Ga y In 1-y P superlattice.

[0011] In an example of the quantum dot infrared detector provided in the above aspect, 0.1≤x≤0.9, and 0.35≤y≤0.55.

[0012] In one example of the quantum dot infrared detector provided in the above aspect, the Al x Ga 1-x InP / Ga y In 1-y The P superlattice consists of 20 layers of Alx Ga 1-x InP layer and 20 layers of Ga y In 1-y P superlattice layer, the Al x Ga 1-x The InP layer and the Ga y In 1- y The P superlattice layers are stacked alternately.

[0013] According to another aspect of the present invention, a method for manufacturing a quantum dot infrared detector is provided, which comprises: forming a buffer layer on a substrate; forming a first confinement layer on the buffer layer; forming a first waveguide layer on the first confinement layer; forming a first superlattice layer on the first waveguide layer; forming a first barrier layer on the first superlattice layer; forming a quantum well layer on the first barrier layer; forming a quantum dot layer on the quantum well layer; forming a second barrier layer on the quantum dot layer; forming a second superlattice layer on the second barrier layer; forming a second waveguide layer on the second superlattice layer; forming a second confinement layer on the second waveguide layer; forming a contact layer on the second confinement layer; forming a first electrode on the side of the substrate facing away from the buffer layer and forming a second electrode on the contact layer; when the quantum dot layer and the substrate are under compressive strain, the first superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the first superlattice layer and the substrate are under compressive strain.

[0014] Beneficial effects: The present invention improves the performance of quantum dot infrared detectors by compensating for the strain presented by the quantum dot layer and the substrate by forming a superlattice layer that presents a strain opposite to the strain presented by the quantum dot layer and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other aspects, features and advantages of the embodiments of the present invention will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0016] Figure 1 is a schematic structural diagram of a quantum dot infrared detector according to an embodiment of the present invention;

[0017] Figure 2 It is a dark current test diagram of a quantum dot infrared detector according to an embodiment of the present invention and a conventional quantum dot infrared detector;

[0018] Figure 3 is a schematic diagram of the bandgap widths of some component layers in a quantum dot infrared detector according to an embodiment of the present invention;

[0019] Figure 4 is a schematic diagram of the detection wavelength range of a quantum dot infrared detector according to an embodiment of the present invention;

[0020] Figure 5 This is a schematic diagram of the detection wavelength range of a conventional quantum dot infrared detector. DETAILED DESCRIPTION

[0021] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention may be implemented in many different forms, and the present invention should not be construed as being limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided to explain the principles of the present invention and their practical applications, so that other persons skilled in the art can understand the various embodiments of the present invention and various modifications suitable for specific intended applications.

[0022] As used herein, the term "including" and its variations represent open terms, meaning "including but not limited to". The terms "based on", "according to", etc. mean "based at least in part on", "based at least in part on". The terms "embodiment", "one example", "one embodiment" and "an embodiment" mean "at least one embodiment". The terms "another embodiment", "another embodiment", "another example", "yet another example" mean "at least one other embodiment". The terms "first", "second", etc. may refer to different or the same objects. Other definitions may be included below, whether explicit or implicit. Unless the context clearly indicates otherwise, the definition of a term is consistent throughout the specification.

[0023] It should also be noted that, in order to avoid obscuring the present invention due to unnecessary details, only structures and / or processing steps closely related to the solutions according to the present invention are shown in the drawings, while other details that are not very relevant are omitted.

[0024] Figure 1 FIG. 1 is a schematic diagram of the structure of a quantum dot infrared detector according to an embodiment of the present invention. It should be noted that the structure of the quantum dot infrared detector of the present invention is not based on Figure 1 The structures shown are limited.

[0025] Reference Figure 1According to an embodiment of the present invention, the quantum dot infrared detector comprises: a substrate 100; a buffer layer 110 on the substrate 100; a first confinement layer 120 on the buffer layer 110; a first waveguide layer 130 on the first confinement layer 120; a first superlattice layer 140 on the first waveguide layer 130; a first barrier layer 150 on the first superlattice layer 140; a quantum well layer 160 on the first barrier layer 150; a quantum dot layer 170 on the quantum well layer 160; a second barrier layer 180 on the quantum dot layer 170; a second superlattice layer 180 on the second barrier layer 180; layer 190; a second waveguide layer 200 on the second superlattice layer 190; a second confinement layer 210 on the second waveguide layer 200; a contact layer 220 on the second confinement layer 210; a first electrode 240 on the side of the substrate facing away from the buffer layer 110, and a second electrode 230 on the contact layer 220; wherein, when the quantum dot layer 170 and the substrate 100 are under compressive strain, the first superlattice layer 140 and the substrate 100 are under tensile strain; when the quantum dot layer 170 and the substrate 100 are under tensile strain, the first superlattice layer 140 and the substrate 100 are under compressive strain.

[0026] In addition, in another embodiment, when the quantum dot layer 170 and the substrate 100 are under compressive strain, the second superlattice layer 190 and the substrate 100 are under tensile strain; when the quantum dot layer 170 and the substrate 100 are under tensile strain, the second superlattice layer 190 and the substrate 100 are under compressive strain.

[0027] In addition, in another embodiment, when the quantum dot layer 170 and the substrate 100 are under compressive strain, the first superlattice layer 140 and the second superlattice layer 190 and the substrate 100 are under tensile strain; when the quantum dot layer 170 and the substrate 100 are under tensile strain, the first superlattice layer 140 and the second superlattice layer 190 and the substrate 100 are under compressive strain.

[0028] It should be noted that the structure of the quantum dot infrared detector of the present invention is not based on Figure 1 The structure shown is a limitation, as long as it is a quantum dot infrared detector having a superlattice layer disposed on the side of the quantum dot layer facing the substrate and / or the side facing away from the substrate. Of course, in such a quantum dot infrared detector, the strain relationship between the superlattice layer on the side facing the substrate and / or the side facing away from the substrate and the substrate must satisfy the strain relationship between the first superlattice layer 140 and / or the second superlattice layer 190 and the substrate 100 described above.

[0029] Specifically, the substrate 100 is an N-type doped GaAs substrate, but the present invention is not limited thereto.

[0030] The buffer layer 110 is an AlGaAs / GaAs superlattice structure, and may also be an AlGaAs / AlGaAs, AlAs / AlGaAs, or GaAs / GaAs superlattice structure. The Al component in AlGaAs is 1%-95%. In the process of making the buffer layer 110, the flow rate of arsine is 1-2000sccm, the ratio of 5:3 is 0.5-2000; the growth cycle is 1-50, the thickness is 50-2000 nm, and the growth rate is 0.1-2nm / s. N-type doping, the doping source can be disilane, and the doping concentration is 1×10 17 cm -3 Up to 5×10 18 cm -3 .

[0031] The first confinement layer 120 is Al x Ga 1-x As, InGaAs, GaInP, AlInP, InAlAs can also be used. The thickness of the first confinement layer 120 is 10-3000nm, the growth rate is 0.1-1nm / s, wherein the Al component x is 1%-95%, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000; the first confinement layer 120 is N-type doped, the doping source can be disilane, and the doping concentration is 1×10 17 cm -3 Up to 5×10 18 cm -3 .

[0032] The material of the first waveguide layer 130 is Al x Ga 1-x As, InGaAs, InGaP, InAlP, InAlAs can also be used. The thickness of the first waveguide layer 130 is 1-1000nm, and the growth rate is 0.1-1nm / s. Among them, the Al component x is 1%-95%, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000.

[0033] The first superlattice layer 140 is Al x Ga 1-x InP / Ga x In 1-xP, AlInP / AlGaInP, AlInP / GaInP, AlGaInP / AlGaInP can also be used. The Al component x in AlGaInP accounts for 0.1-0.9, the thickness is 1-500nm, and the growth rate is 0.1nm / s. The Ga component x in GaInP accounts for 0.35-0.55, the thickness is 1-500nm, the growth rate is 0.1nm / s, the phosphine flow rate is 1-2000sccm, and the five-to-three ratio is 0.5-2000. The superlattice growth cycle is 1-50.

[0034] The material of the first barrier layer 150 is GaAs, and InGaAs, InGaP, InAlP, InAlAs, AlGaAs may also be used. The thickness of the barrier layer 150 is 1-500 angstroms, the growth rate is 0.5-10A / s, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000.

[0035] The material of the quantum well layer 160 can be InxGa1-xAs, or GaInP, AlInP, InAlAs, AlGaAs. The thickness of the quantum well layer 160 is 1-500 angstroms, the growth rate is 0.05A-10A / s, the In component x accounts for 0.05-0.6, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000.

[0036] The material of the quantum dot layer 170 is InAs, the thickness is 0.5-100 angstroms, the growth rate is 0.05A-3A / s, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000.

[0037] The material of the second barrier layer 180 is GaAs, and InGaAs, InGaP, InAlP, InAlAs, AlGaAs may also be used. The thickness of the second barrier layer 180 is 1-500 angstroms, the growth rate is 0.5-10A / s, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000.

[0038] The second superlattice layer 190 is Al x Ga 1-x InP / Ga x In 1-xP, AlInP / AlGaInP, AlInP / GaInP, AlGaInP / AlGaInP can also be used. Among them, the Al component x in AlGaInP accounts for 0.1-0.9, the thickness is 1-500nm, and the growth rate is 0.1nm / s. The Ga component x in GaInP accounts for 0.35-0.55, the thickness is 1-500nm, the growth rate is 0.1nm / s, the phosphine flow rate is 1-2000sccm, and the five-to-three ratio is 0.5-2000. The superlattice growth cycle is 1-50.

[0039] The material of the second waveguide layer 200 is Al x Ga 1-x As, InGaAs, InGaP, InAlP, InAlAs can also be used, with a thickness of 1-1000nm and a growth rate of 0.1-1nm / s. The Al component x is 1%-95%, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000.

[0040] The material of the second confinement layer 210 is Al x Ga 1-x As, InGaAs, GaInP, AlInP, InAlAs can also be used. The thickness of the second confinement layer 210 is 10-3000nm, the growth rate is 0.1-1nm / s, wherein the Al component x is 1%-95%, the arsine flow rate is 1-2000sccm, and the 5:3 ratio is 0.5-2000; the second confinement layer 210 is P-type doped, the doping source can be CBr4, CCl4, DEZn, and the doping concentration is 1×10 17 cm -3 -5×10 18 cm -3 .

[0041] The material of the contact layer 220 is GaAs, or InGaAs. The thickness of the contact layer 220 is 10-500nm, and the growth rate is 0.1-2nm / s. The contact layer 220 is P-type doped, and the doping source can be CBr4, CCl4, DEZn, and the concentration is 5×10 18 cm -3 Up to 1×10 20 cm -3 .

[0042] The following combination Figure 1 A method for manufacturing a quantum dot infrared detector according to an embodiment of the present invention is described in detail.

[0043] The method for manufacturing a quantum dot infrared detector according to an embodiment of the present invention comprises the following steps:

[0044] 1. Place the GaAs substrate 100 in a reaction chamber, reduce the pressure in the reaction chamber to 50 mbar, and raise the temperature to 750 degrees. At 350 degrees, introduce 50-1000 sccm of arsine; maintain the temperature at 750 degrees for 15 minutes to remove water and oxygen on the surface of the GaAs substrate 100;

[0045] 2. The temperature of the reaction chamber is lowered to 650 degrees, and an AlGaAs / GaAs superlattice buffer layer 110 is grown, wherein the thickness of AlGaAs is 300nm, the growth rate is 1nm / s, and the Al component is 0.7; the thickness of GaAs is 100nm, and the growth rate is 1nm / s. The superlattice period is 10; the buffer layer 110 is N-type doped, and the doping source can be disilane, and the doping concentration is 5×10 17 cm -3 ;

[0046] 3. Maintain temperature and grow Al x Ga 1-x As confinement layer 120 has a thickness of 600nm and a growth rate of 0.5nm / s, wherein the Al component x is 0.55, representing the molar proportion of the Al element in the total molar proportion of group III; wherein the 5:3 ratio is 200. The 5:3 ratio is the ratio of the molar proportion of group V elements to the molar proportion of group III elements, which affects the crystal quality and optoelectronic properties of the material. The confinement layer 120 is N-type doped, and the doping source can be disilane, with a doping concentration of 5×10 17 cm -3 ;

[0047] 4. The temperature of the reaction chamber remains unchanged and Al is grown x Ga 1-x As waveguide layer 130, with a thickness of 50 nm and a growth rate of 0.3 nm / s, wherein the Al component x accounts for 0.25 and the 5:3 ratio is 100;

[0048] 5. The temperature of the reaction chamber drops to 500 degrees to grow Al x Ga 1-x InP / Ga x In 1-x P superlattice layer 140, Al x Ga 1-x The InP thickness is 100A, the growth rate is 3 angstroms / s, the Al component x accounts for 0.65, and the 5:3 ratio is 100. x In 1-x The P thickness is 50A, the growth rate is 2 angstroms / s, the Ga component x accounts for 0.51, the five-to-three ratio is 150, and the superlattice period is 5;

[0049] 6. Maintaining the temperature, grow a GaAs barrier layer 150 with a thickness of 50 angstroms, a growth rate of 2 angstroms / s, and a 5:3 ratio of 30;

[0050] 7. The temperature of the reaction chamber remains unchanged, and the growth of In x Ga 1-x As quantum well layer 160, with a thickness of 30 angstroms and a growth rate of 1.5 angstroms / s, wherein the In component x is 0.15 and the 5:3 ratio is 100;

[0051] 8. Grow an InAs quantum dot layer 170 with a thickness of 10 angstroms, a growth rate of 0.1-3 angstroms / s, and a 5:3 ratio of 25;

[0052] 9. Continue to grow the GaAs barrier layer 180 with a thickness of 50 angstroms, a growth rate of 2 angstroms / s, and a 5:3 ratio of 30;

[0053] 10. Growth of Al x Ga 1-x InP / Ga x In 1-x P superlattice 190, Al x Ga 1-x The InP thickness is 100 angstroms, the growth rate is 3 angstroms / s, the Al component x accounts for 0.65, and the 5:3 ratio is 100. x In 1-x The P thickness is 50 angstroms, the growth rate is 2 angstroms / s, the Ga component x accounts for 0.51, and the 5:3 ratio is 150. The superlattice period is 5;

[0054] 11. The temperature rises to 650 degrees and Al is grown x Ga 1-x As waveguide layer 200, thickness 50nm, growth rate 0.3nm / s, Al component x accounts for 0.25, 5:3 ratio is 100;

[0055] 12. Maintain temperature and grow Al x Ga 1-x The As limiting layer 210 has a thickness of 600 nm and a growth rate of 0.5 nm / s, wherein the Al component x is 0.55 and the 5:3 ratio is 200; the limiting layer 210 is P-type doped, and the doping source is CBr4 with a concentration of 1×10 18 cm- 3 ;

[0056] 13. The temperature is lowered to 500 degrees, and a GaAs contact layer 220 is grown with a thickness of 100 nm, a growth rate of 1 nm / s, and a 5:3 ratio of 50. The contact layer 220 is P-type doped, the doping source is CBr4, and the doping concentration is 5×10 19 cm -3 .

[0057] Figure 21 is a dark current test diagram of a quantum dot infrared detector according to an embodiment of the present invention and a conventional quantum dot infrared detector. Figure 2 In the figure, normal represents a conventional quantum dot infrared detector (without the first superlattice layer 140 and / or the second superlattice layer 190), loop5 represents a quantum dot infrared detector in which the growth periods of the first superlattice layer 140 and the second superlattice layer 190 are both 5, and loop15 represents a quantum dot infrared detector in which the growth periods of the first superlattice layer 140 and the second superlattice layer 190 are both 15.

[0058] Reference Figure 2 The dark current of the quantum dot infrared detector according to the embodiment of the present invention is lower than the dark current of the conventional quantum dot infrared detector, which has obvious advantages.

[0059] Figure 3 Schematic diagram of the bandgap width of some component layers in a quantum dot infrared detector according to an embodiment of the present invention. Figure 3 , 140 represents the first superlattice layer 140 ; ​​150 represents the first barrier layer 150 ; 160 represents the quantum well layer 160 ; and 170 represents the quantum dot layer 170 .

[0060] Reference Figure 3 The bandgap width of AlGaInP ranges from 1.89 eV to 2.3 eV. Therefore, the quantum dot infrared detector according to the embodiment of the present invention has a higher adjustable bandgap range, thereby achieving a wider detection wavelength.

[0061] Figure 4 It is a schematic diagram of the detection wavelength range of the quantum dot infrared detector according to an embodiment of the present invention. Figure 5 This is a schematic diagram of the detection wavelength range of a conventional quantum dot infrared detector.

[0062] Reference Figure 4 and Figure 5 The detection wavelength range of the quantum dot infrared detector according to the embodiment of the present invention is 2-9μm, especially the detection intensity in the range of 2-5μm is stronger, thereby achieving a wider wavelength range responsiveness; while the detection wavelength range of the conventional quantum dot infrared detector is 3-9μm, but the detection intensity in the wavelength range of 2-5μm is significantly lower than the detection intensity of the quantum dot infrared detector according to the embodiment of the present invention.

[0063] To summarize, the quantum dot infrared detector according to an embodiment of the present invention utilizes quantum dots grown in quantum wells, and optimizes quantum dot strain and growth conditions by growing a superlattice structure before and after the quantum well, adjusting the number of periods of the superlattice structure, the thickness and composition of the superlattice structure, etc., so that the quantum dots grow uniformly, reducing dark current and achieving higher detection efficiency; compared with existing quantum well detectors, the dark current is smaller, and the response and gain detection rate are higher.

[0064] The terms "exemplary," "example," and the like used throughout this specification mean "used as an example, instance, or illustration" and do not mean "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described techniques. However, these techniques can be implemented without these specific details. In some instances, in order to avoid obscuring the concepts of the described embodiments, well-known structures and devices are shown in block diagram form.

[0065] The optional implementation modes of the embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above implementation modes. Within the technical concept of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.

[0066] The above description of the contents of this specification is provided to enable any person of ordinary skill in the art to implement or use the contents of this specification. Various modifications to the contents of this specification will be apparent to those of ordinary skill in the art, and the general principles defined herein may be applied to other variations without departing from the scope of protection of the contents of this specification. Therefore, the contents of this specification are not limited to the examples and designs described herein, but are consistent with the widest range of principles and novel features disclosed herein.

Claims

1. A quantum dot infrared detector, comprising a substrate and a quantum dot layer disposed on the substrate, characterized in that: The quantum dot infrared detector further includes: a first superlattice layer between the substrate and the quantum dot layer; Wherein, when the quantum dot layer and the substrate are under compressive strain, the first superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the first superlattice layer and the substrate are under compressive strain.

2. The quantum dot infrared detector according to claim 1, characterized in that: The quantum dot infrared detector further comprises: a second superlattice layer on a side of the quantum dot layer facing away from the substrate; Wherein, when the quantum dot layer and the substrate are under compressive strain, the second superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the second superlattice layer and the substrate are under compressive strain.

3. The quantum dot infrared detector according to claim 2, characterized in that: The quantum dot infrared detector also includes: a buffer layer, a first confinement layer, and a first waveguide layer stacked between the substrate and the first superlattice layer and sequentially including from the substrate to the first superlattice layer; A first barrier layer and a quantum well layer stacked between the first superlattice layer and the quantum dot layer and sequentially included from the first superlattice layer to the quantum dot layer; a second barrier layer between the quantum dot layer and the second superlattice layer; A second waveguide layer, a second confinement layer, and a contact layer sequentially stacked on a side of the second superlattice layer facing away from the second barrier layer and away from the second superlattice layer; A first electrode is disposed on a layer of the substrate facing away from the buffer layer and a second electrode is disposed on the contact layer.

4. The quantum dot infrared detector according to any one of claims 1 to 3, characterized in that: The substrate is a GaAs substrate, and the first superlattice layer is an Al x Ga 1-x InP / Ga y In 1-y P superlattice.

5. The quantum dot infrared detector according to claim 4, characterized in that: 0.1≤x≤0.9, and 0.35≤y≤0.

55.

6. The quantum dot infrared detector according to claim 4, characterized in that: The Al x Ga 1-x InP / Ga y In 1-y The P superlattice consists of 20 layers of Al x Ga 1-x InP layer and 20 layers of Ga y In 1-y P superlattice layer, the Al x Ga 1-x The InP layer and the Ga y In 1-y The P superlattice layers are stacked alternately.

7. The quantum dot infrared detector according to claim 2 or 3, characterized in that: The substrate is a GaAs substrate, and the first superlattice layer and the second superlattice layer are both Al x Ga 1-x InP / Ga y In 1-y P superlattice.

8. The quantum dot infrared detector according to claim 7, characterized in that: 0.1≤x≤0.9, and 0.35≤y≤0.

55.

9. The quantum dot infrared detector according to claim 7, characterized in that: The Al x Ga 1-x InP / Ga y In 1-y The P superlattice consists of 20 layers of Al x Ga 1-x InP layer and 20 layers of Ga y In 1-y P superlattice layer, the Al x Ga 1-x The InP layer and the Ga y In 1-y The P superlattice layers are stacked alternately.

10. A method for manufacturing a quantum dot infrared detector, characterized in that: The production method comprises: forming a buffer layer on the substrate; Forming a first restriction layer on the buffer layer; forming a first waveguide layer on the first limiting layer; Forming a first superlattice layer on the first waveguide layer; forming a first barrier layer on the first superlattice layer; Forming a quantum well layer on the first barrier layer; Forming a quantum dot layer on the quantum well layer; Forming a second barrier layer on the quantum dot layer; forming a second superlattice layer on the second barrier layer; forming a second waveguide layer on the second superlattice layer; forming a second confinement layer on the second waveguide layer; forming a contact layer on the second restriction layer; Forming a first electrode on a side of the substrate facing away from the buffer layer and forming a second electrode on the contact layer; Wherein, when the quantum dot layer and the substrate are under compressive strain, the first superlattice layer and the substrate are under tensile strain; when the quantum dot layer and the substrate are under tensile strain, the first superlattice layer and the substrate are under compressive strain.

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