Perovskite / silicon-based laminated cell and preparation method thereof

Abstract

The invention relates to the technical field of perovskite / silicon-based laminated cells, in particular to a perovskite / silicon-based laminated cell and a preparation method thereof. The battery preparation method comprises the steps that a substrate composed of a silicon-based battery is provided, the substrate is provided with an edge area and a film forming area, and the edge area surrounds the film forming area; forming a blocking structure on the surface of the substrate in the edge region, the blocking structure having an opening which exposes the substrate in the film forming region; forming a solution of a target film layer in the opening; and forming a target film layer based on the solution of the target film layer, the target film layer being at least one of the perovskite functional layers. The barrier structure is formed on the surface of the substrate in the edge area, so that when the solution of the target film layer is formed in the opening, the barrier structure can prevent the solution of the target film layer from overflowing out of the substrate, and the solution of the target film layer is further prevented from polluting the second surface of the substrate or the side wall of the substrate. The range of the solution of the target film layer is limited through the blocking structure, so that the probability of electric leakage of the battery is reduced.

Description

Technical Field

[0001] The present disclosure relates to the technical field of perovskite / silicon-based tandem cells, and in particular to a perovskite / silicon-based tandem cell and a preparation method thereof. Background Art

[0002] Perovskite solar cells have outstanding advantages such as high photoelectric conversion efficiency, low cost, and simple production. Therefore, they have become the most promising solar cells and a research hotspot. At present, the cell efficiency of perovskite solar cells has reached 26.7%. The wide-bandgap perovskite absorber layer is very conducive to forming a stacked cell with crystalline silicon (SHJ) solar cells, and the photoelectric conversion efficiency of the double-junction solar cell composed of perovskite and crystalline silicon has reached 34.6%, and it has better stability than the single-junction perovskite cell. At present, the efficiency of the perovskite / crystalline silicon stacked cell is still far from the theoretical efficiency of 42%. Further optimizing the cell structure and optimizing the device design will be one of the key points of improving the efficiency of solar cells in the future.

[0003] Tandem solar cells combine cells with different bandgap widths to utilize the solar spectrum in segments. Wide-bandgap cells absorb short-wavelength sunlight, while narrow-bandgap cells absorb long-wavelength sunlight, reducing photon thermalization losses. The theoretical limit efficiency of a single double-junction tandem solar cell can reach about 46%. Generally speaking, this type of tandem cell. The top is a perovskite solar cell, and the bottom is a silicon-based solar cell. The top cell perovskite solar cell absorbs high-energy photons with wavelengths from 200nm to 850nm, and the bottom cell silicon-based cell absorbs low-energy photons with wavelengths greater than 600nm. The two are stacked on each other to reduce thermal carrier losses in wider wavelength absorption areas and increase photoelectric conversion efficiency.

[0004] Among them, crystalline silicon cells have mature theory / process technology. Compared with crystalline silicon cells, perovskite thin-film solar cells are composed of multiple film layers. For example, light absorption layer, electron transport layer, hole transport layer or passivation layer. With the potential of stacked cells and the application of large-size bottom cells, the edge problem of stacked cells is becoming more and more important. At present, in the process of preparing perovskite thin-film solar cells, a method for improving the edge problem of stacked cells is urgently needed to further improve the reliability of stacked solar cells. Summary of the invention

[0005] Based on this, it is necessary to provide a battery and a preparation method thereof to address the problem of difficult film layers of solar cells in the prior art.

[0006] In order to achieve the above object, on the one hand, a method for preparing a perovskite / silicon-based tandem cell is provided, comprising:

[0007] Providing a substrate composed of a silicon-based battery, wherein the substrate has an edge region and a film forming region, wherein the edge region surrounds the film forming region;

[0008] forming a blocking structure on the surface of the substrate in the edge region, wherein the blocking structure has an opening, and the opening exposes the substrate in the film forming region;

[0009] A solution for forming a target film layer in the opening;

[0010] Based on the solution of the target film layer, a target film layer is formed, and the target film layer is at least one layer of the perovskite functional layer.

[0011] In one embodiment, forming a blocking structure on the substrate surface in the edge region includes:

[0012] forming a barrier material layer on the surface of the substrate;

[0013] The barrier material layer is patterned to retain the barrier material layer located in the edge area to form the barrier structure.

[0014] On the one hand, a perovskite / silicon-based tandem cell is provided, comprising:

[0015] A substrate composed of a silicon-based cell, having an edge region and a film-forming region, wherein the edge region surrounds the film-forming region;

[0016] A target film layer is located on the surface of the substrate in the film forming area;

[0017] The barrier structure is located on the substrate surface in the edge region, and the barrier structure surrounds the target film layer.

[0018] In one embodiment, the thickness of the blocking structure is greater than or equal to the thickness of the target film layer.

[0019] In one embodiment, the edge profile of the blocking structure has the same shape as the edge profile of the substrate.

[0020] In one embodiment, the material of the blocking structure includes insulating material.

[0021] In one embodiment, the width of the blocking structure is within a preset width range, and the preset width range includes 0.001 mm-5 mm.

[0022] In one embodiment, the battery further comprises:

[0023] a functional film layer, located on a side of the target film layer away from the substrate,

[0024] The encapsulation layer is used to encapsulate the battery, and the encapsulation layer covers the barrier structure.

[0025] In one embodiment, the blocking structure includes at least a first blocking structure and a second blocking structure that are spaced apart from each other, and the first blocking structure surrounds the second blocking structure.

[0026] In one embodiment, the blocking structure includes a first edge and a second edge that are continuously arranged, and an angle between the first edge and the second edge includes an obtuse angle.

[0027] The battery and its preparation method of the present specification have the following beneficial effects: by forming a blocking structure on the surface of the substrate in the edge area, when the solution of the target film layer is formed in the opening, the blocking structure can prevent the solution of the target film layer from overflowing the substrate, thereby preventing the solution of the target film layer from contaminating the second surface of the substrate or the side wall of the substrate. Furthermore, in the present specification, the scope of the solution of the target film layer is limited by the blocking structure, and the solution of the target film layer can also be prevented from contacting with other multiple conductive film layers in the battery, thereby reducing the probability of battery leakage and improving the stability of the battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0029] Figure 1 is a flow chart of a battery preparation method provided in an embodiment;

[0030] Figure 2 is a schematic diagram of a substrate provided in an embodiment;

[0031] Figure 3 A schematic diagram of a target film layer provided in an embodiment;

[0032] Figure 4 A schematic diagram of a target film layer and a barrier structure provided in an embodiment;

[0033] Figure 5 A schematic diagram of a blocking structure provided in the first embodiment;

[0034] Figure 6 A schematic diagram of a blocking structure provided in the second embodiment;

[0035] Figure 7 It is a schematic diagram of the blocking structure provided in the third embodiment.

[0036] Description of reference numerals: battery 100 ; substrate 110 ; barrier structure 120 ; first edge 121 ; second edge 122 ; first barrier structure 123 ; second barrier structure 124 ; target film layer 130 ; opening 200 .

[0037] In order to better describe and illustrate the embodiments and / or examples of the inventions disclosed herein, reference may be made to one or more drawings. The additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed inventions, the embodiments and / or examples currently described, and the best modes of these inventions currently understood. DETAILED DESCRIPTION

[0038] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0040] In each embodiment, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in each embodiment can be understood according to the specific situation.

[0041] It should be understood that when an element or layer is referred to as being "on, adjacent to, or connected to other elements or layers, it may be directly on, adjacent to, or connected to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, or directly connected to other elements or layers, there may be no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present embodiment, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0042] Spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used herein to describe the relationship between an element or feature shown in the figures and other elements or features. It should be understood that in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, the element or feature described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0043] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0044] Embodiments of the embodiments are described herein with reference to schematic diagrams of idealized embodiments (and intermediate structures) of the present specification, and variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the present embodiments should not be limited to the particular shapes of the regions illustrated herein, but rather include deviations in shapes due to, for example, manufacturing techniques. The regions shown in the figures are schematic in nature, and their shapes do not represent the actual shapes of the regions of the device and do not limit the scope of the present embodiments.

[0045] In the related art, as an example, in the production of perovskite / crystalline silicon stacked solar cells, when preparing the perovskite layer film, it is first necessary to form a perovskite precursor solution on the substrate. After that, the perovskite precursor solution can diffuse and disperse on the surface of the substrate. In this process, the perovskite precursor solution may overflow the edge of the substrate, thereby causing contamination of the edge of the substrate and the back of the substrate, and may even corrode the conductive film (e.g., TCO) and electrode (e.g., Ag electrode) on the back of the back substrate, affecting the overall performance of the solar cell.

[0046] Based on this, in one embodiment, see Figure 1 , providing a method for preparing a perovskite / silicon-based stacked cell. Figure 2 and Figure 3 The cross-sectional view of the structure obtained in the intermediate process of the method for preparing a perovskite / silicon-based tandem cell includes the following steps:

[0047] Step S100: providing a substrate 110 composed of a silicon-based battery, wherein the substrate 110 has an edge region and a film forming region, wherein the edge region surrounds the film forming region.

[0048] Step S200 : forming a blocking structure 120 on the surface of the substrate 110 in the edge region, wherein the blocking structure 120 has an opening 200 , and the opening 200 exposes the substrate 110 in the film forming region.

[0049] Step S300 : forming a solution of a target film layer 130 in the opening 200 .

[0050] Step S400: Based on the solution of the target film layer 130, a target film layer 130 is formed. The target film layer 130 is at least one layer of the perovskite functional layer.

[0051] In S100 , the substrate 110 may be a silicon-based battery, which may be a whole cell or a half cell. This embodiment does not impose any specific restrictions on the shape, size, etc. of the substrate 110 .

[0052] The substrate 110 may have a first surface and a second surface opposite to each other. The first surface of the substrate 110 has an edge region and a film forming region, and the edge region surrounds the film forming region. It is understood that the edge region may be in a continuous ring shape, or the outline of the edge region may be consistent with the outline of the substrate 110. This embodiment does not specifically limit the shape, size, proportion, etc. of the edge region and the film forming region.

[0053] In step S200, refer to Figure 2 , a blocking structure 120 may be formed in the edge region. In the thickness direction of the substrate 110 , the blocking structure 120 may protrude from the substrate 110 .

[0054] The blocking structure 120 may have an opening 200, and the opening 200 exposes the substrate 110 located in the film forming area. Figure 4 and Figure 5 , the blocking structure 120 may be continuous and ring-shaped. In another possible example, the edge profile of the blocking structure 120 may have the same shape as the edge profile of the substrate 110, for example, the edge profile of the blocking structure 120 may be a polygon as the edge profile of the substrate 110. In yet another possible example, the width of the blocking structure 120 may be within a preset width range, and the preset width range may include 0.001 mm-5 mm. In yet another possible example, see Figure 3 , the cross-sectional view of the blocking structure 120 may be a positive trapezoid, thereby increasing the stability of the blocking structure 120 .

[0055] The material of the blocking structure 120 may include an insulating material. For example, the material of the blocking structure 120 may include but is not limited to one of silicon dioxide, silicon nitride, aluminum oxide, polytetrafluoroethylene, polypropylene, polyethylene, cyclized rubber type photoresist and cinnamate type photoresist or a mixture of several of them.

[0056] It is understood that this embodiment does not impose any specific restrictions on the height or width, dimensions, materials, etc. of the blocking structure 120. Furthermore, the width, etc. of the blocking structure 120 may be smaller, thereby reducing the impact on the target film layer 130 formed subsequently.

[0057] In step S300, refer to Figure 3, a precursor solution prepared with organic materials and / or inorganic materials required for preparing the target film layer 130 can be placed in the opening 200. As an example, when the target film layer 130 is a perovskite layer thin film, the chemical formula of the perovskite solution is ABX3, A includes one or more combinations of methylamine cations, formamidine cations, and cesium cations, B includes one or more combinations of lead cations and tin cations, and X includes one or more combinations of bromine anions and iodine anions. The combination of the above materials is dissolved in a mixed solvent of DMF, NMP or 2-Me, DMSO, and completely dissolved to obtain a perovskite solution. In addition, the target film layer 130 can also be an electron transport layer, a hole transport layer, a passivation layer, etc. This embodiment does not specifically limit the target film layer 130 and the solution of the target film layer 130.

[0058] In step S400, as an example, see Figure 4 The target film layer 130 solution can be spread in the opening 200 so that the target film layer 130 is evenly dispersed in the film forming area in the opening 200. The specific spreading method includes inkjet printing, spraying, slit coating, etc. Afterwards, the target film layer 130 solution can be cured by heating and curing to form the target film layer 130.

[0059] In this embodiment, by forming a blocking structure 120 on the surface of the substrate 110 in the edge region, when the solution of the target film layer 130 is formed in the opening 200, the blocking structure 120 can block the solution of the target film layer 130 from overflowing the substrate 110, thereby preventing the solution of the target film layer 130 from contaminating the second surface of the substrate 110 or the sidewall of the substrate 110. Furthermore, in this embodiment, by limiting the range of the solution of the target film layer 130 through the blocking structure 120, the solution of the target film layer 130 can also be prevented from contacting with the functional layer in the bottom battery as the substrate 110, for example, when the substrate 110 is a crystalline silicon battery, the solution of the target film layer 130 is prevented from contacting with the doping layer or the conductive layer, thereby reducing the probability of leakage of the bottom battery and improving the overall stability of the perovskite / silicon-based stacked battery.

[0060] In one embodiment, step S200 may include:

[0061] Step S210 : forming a barrier material layer on the surface of the substrate 110 .

[0062] Step S220 : performing patterning on the barrier material layer, retaining the barrier material layer located in the edge region, and forming a barrier structure 120 .

[0063] In step S210, as an example, any one or more of physical vapor deposition, chemical vapor deposition, sol-gel, liquid deposition, spraying or inkjet printing can be used to form a barrier material layer on the surface of the substrate 110. At this time, the barrier material layer can be formed in the edge area and the film forming area at the same time. Of course, the method for forming the barrier material layer is not limited to the above methods.

[0064] In step S220 , as an example, a patterned photoresist layer may be formed on the surface of the blocking material layer in the edge region, and the blocking material layer in the film forming region may be removed, leaving the blocking material layer in the edge region, and the remaining blocking material layer may form a blocking structure 120 .

[0065] In this embodiment, the process of forming the blocking structure 120 is exemplarily shown. In this embodiment, the blocking material layer is patterned to obtain a blocking structure 120 with high precision.

[0066] The following is an exemplary display of the specific formation process of the blocking structure 120. It is understood that the following examples are for reference only and do not limit the protection scope of this embodiment. In the first example, a perovskite cell is formed on a substrate 110 to form a stacked cell 100. The substrate 110 can be a crystalline silicon cell, and the size of the substrate 110 is 16.6 cm×16.6 cm. The material of the blocking structure 120 is selected as silicon dioxide, and the width of the blocking structure 120 is 0.005 mm. The preparation method of the silicon dioxide blocking structure 120 can be selected according to the thickness requirements of the target film layer 130, and any one or more of the physical vapor deposition method, chemical vapor deposition method, sol-gel method or liquid deposition method can be selected. In the second example, the size of the substrate 110 formed by the crystalline silicon cell is 16.6 cm×16.6 cm, the material of the blocking structure 120 is aluminum oxide, the width of the blocking structure 120 is 0.005 mm, and the preparation method of the aluminum oxide blocking structure 120 can be selected according to the thickness requirement of the target film layer 130, and any one or more of the methods such as physical vapor deposition, chemical vapor deposition, and sputtering can be selected. In the third example, the size of the substrate 110 formed by the crystalline silicon cell is 16.6 cm×16.6 cm, the material of the blocking structure 120 is polytetrafluoroethylene, and the width of the blocking structure 120 is 0.01 mm. The preparation method of the polytetrafluoroethylene blocking structure 120 can be selected according to the thickness requirement of the target film layer 130. Any one or more of the methods such as ultrasonic spraying and dipping can be selected. In the fourth example, the battery 100 may be a crystalline silicon battery, the size of the substrate 110 of the crystalline silicon battery is 16.6 cm×16.6 cm, the material of the blocking structure 120 is cinnamate photoresist, the width of the blocking structure 120 is 0.01 mm, and the preparation method of the cinnamate photoresist blocking structure 120 may be selected from any one or more of the methods such as inkjet printing and ultrasonic spraying according to the thickness requirements of the target film layer 130. The above data are only used as examples. In actual embodiments, the size of the substrate 110 and the width of the blocking structure 120 are not limited to the above data.

[0067] In one embodiment, after step S400, other functional film layers may be formed on the target film layer 130 or on the second surface of the substrate 110. For example, the functional film layer may include an electrode, etc. Moreover, after forming the functional film layer, an encapsulation layer may be formed to protect multiple film layers in the battery 100. At this time, the material of the encapsulation layer may be consistent with the material of the barrier structure 120. At this time, the encapsulation layer may be fused with the barrier structure 120, thereby further sealing the target film layer 130 to prevent water vapor intrusion.

[0068] It should be understood that although Figure 1The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0069] Based on the same inventive concept, in one embodiment, please refer to Figure 3 and Figure 4 , a perovskite / silicon-based stacked cell 100 is provided. The cell 100 includes: a substrate 110 composed of a silicon-based cell, a target film layer 130 and a barrier structure 120 .

[0070] The material of the substrate 110 may include a semiconductor material or an insulating material. The substrate 110 may have a first surface and a second surface opposite to each other. The first surface of the substrate 110 has an edge region and a film forming region, and the edge region surrounds the film forming region.

[0071] The target film layer 130 is located on the surface of the substrate 110 in the film forming area. As an example, the target film layer 130 can be a perovskite film, etc. The target film layer 130 can be a single-layer structure or a multi-layer stacked structure.

[0072] The blocking structure 120 is located on the surface of the substrate 110 in the edge region, and the blocking structure 120 surrounds the target film layer 130. The material of the blocking structure 120 may include an insulating material. For example, the material of the blocking structure 120 may include, but is not limited to, one of silicon dioxide, silicon nitride, aluminum oxide, polytetrafluoroethylene, polypropylene, polyethylene, cyclized rubber type photoresist, and cinnamate type photoresist, or a mixture of several of them.

[0073] In this embodiment, a blocking structure 120 is formed on the surface of the substrate 110 in the edge area, so that when the target film layer 130 is formed, the blocking structure 120 can block the target film layer 130 so that the solution of the target film layer 130 does not overflow the substrate 110, thereby preventing the solution of the target film layer 130 from contaminating the second surface of the substrate 110 or the side wall of the substrate 110.

[0074] Further, in the first example, the thickness of the blocking structure 120 may be greater than or equal to the thickness of the target film layer 130. For example, the thickness of the blocking structure 120 may be 5 μm-2 mm. When the thickness of the blocking structure 120 is greater than or equal to the thickness of the target film layer 130, the blocking structure 120 is higher than the target film layer 130, further preventing the solution of the target film layer 130 from overflowing. The above data are only used as examples. In actual embodiments, the thickness of the blocking structure 120 is not limited to the above data.

[0075] In the second example, see Figure 3 , the width of the blocking structure 120 is within a preset width range. For example, the preset width range includes 0.001 mm-5 mm. In this example, the width range of the blocking structure 120 is set to reduce the impact of the blocking structure 120 on the area of ​​the target film layer 130.

[0076] In a third example, the edge profile of the blocking structure 120 has the same shape as the edge profile of the substrate 110. In this case, the blocking structure 120 may be formed around the edge of the substrate 110. As an example, see Figure 5 The substrate 110 uses a whole silicon wafer as a substrate and forms a silicon-based battery. The whole silicon wafer has a chamfer, and the edge profile of the blocking structure 120 can be the same as the edge profile of the substrate 110.

[0077] In the fourth example, see Figure 6 In the chamfered area, the blocking structure 120 may include a continuous first edge 121 and a second edge 122, and the angle between the first edge 121 and the second edge 122 (for example, Figure 6 The middle angle A) may be an obtuse angle, or the angle between the first edge 121 and the second edge 122 may be greater than or equal to a preset angle. In this case, the angle between the first edge 121 and the second edge 122 is relatively large, thereby reducing the probability that the solution of the target film layer 130 cannot flow into the angle between the first edge 121 and the second edge 122.

[0078] In the fifth example, see Figure 7 The blocking structure 120 at least includes a first blocking structure 123 and a second blocking structure 124 that are spaced apart, and the first blocking structure 123 surrounds the second blocking structure 124. At this time, the first blocking structure 123 and the second blocking structure 124 can jointly increase the blocking effect on the solution of the target film layer 130. Of course, the blocking structure 120 can also include a third blocking structure or a fourth blocking structure, etc.

[0079] In addition, for the specific structure of the above-mentioned blocking structure, it can form a ring structure or a structure with intervals, as long as it can play a blocking role for the solution of the target film layer 130. As an example, in the case where the blocking structure 120 includes multiple substructures, the multiple substructures can be closely connected or have a certain interval, and the sum of the widths of the multiple blocking structures arranged on the same side can be less than 1 mm.

[0080] In one embodiment, the perovskite / silicon-based tandem cell 100 further includes a functional film layer and an encapsulation layer.

[0081] The functional film layer may be a side of the target film layer 130 away from the substrate 110. For example, the functional film layer may include a perovskite layer, an electron transport layer, a hole transport layer, a passivation layer, and the like.

[0082] In addition, after the perovskite cell is formed on the substrate 110, a stacked cell is formed, which also needs to be packaged. Due to the existence of the blocking structure 120, it can more effectively isolate water and oxygen in the air from penetrating into the perovskite cell, further improving the stability of the stacked cell.

[0083] Preferably, the material of the encapsulation layer may be consistent with the material of the barrier structure 120 , so that the encapsulation layer may be fused with the barrier structure 120 , thereby further sealing the target film layer 130 to prevent water vapor intrusion.

[0084] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that "this embodiment" or "one embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification may not necessarily refer to the same embodiment.

[0085] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0086] The embodiments described above only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all fall within the scope of protection of the present application. Therefore, the scope of protection of the patent of the present application shall be subject to the attached claims. The above description is only a preferred implementation method of the present disclosure, and does not limit the scope of the patent of the present disclosure. All equivalent structural transformations made by using the contents of the present disclosure specification and drawings under the inventive concept of the present disclosure, or direct / indirect application in other related technical fields are included in the scope of protection of the patent of the present disclosure.

Claims

1. A method for preparing a perovskite / silicon-based tandem battery, characterized in that: include: Providing a substrate composed of a silicon-based battery, wherein the substrate has an edge region and a film forming region, wherein the edge region surrounds the film forming region; forming a blocking structure on the surface of the substrate in the edge region, wherein the blocking structure has an opening, and the opening exposes the substrate in the film forming region; A solution for forming a target film layer in the opening; Based on the solution of the target film layer, a target film layer is formed, and the target film layer is at least one layer of the perovskite functional layer.

2. The battery preparation method according to claim 1, characterized in that: The forming of a blocking structure on the substrate surface in the edge region includes: forming a barrier material layer on the surface of the substrate; The barrier material layer is patterned to retain the barrier material layer located in the edge area to form the barrier structure.

3. A perovskite / silicon-based tandem battery, characterized in that: include: A substrate composed of a silicon-based cell, having an edge region and a film-forming region, wherein the edge region surrounds the film-forming region; A target film layer is located on the surface of the substrate in the film forming area; The barrier structure is located on the substrate surface in the edge region, and the barrier structure surrounds the target film layer.

4. The battery according to claim 3, characterized in that The thickness of the blocking structure is greater than or equal to the thickness of the target film layer.

5. The battery according to claim 3, characterized in that An edge profile of the blocking structure has the same shape as an edge profile of the substrate.

6. The battery according to claim 3, characterized in that The material of the blocking structure includes insulating material.

7. The battery according to claim 3, characterized in that The width of the blocking structure is within a preset width range, and the preset width range includes 0.001 mm-5 mm.

8. The battery according to claim 3, characterized in that The battery also includes: a functional film layer, located on a side of the target film layer away from the substrate, The encapsulation layer is used to encapsulate the battery, and the encapsulation layer covers the barrier structure.

9. The battery according to claim 3, characterized in that The blocking structure at least includes a first blocking structure and a second blocking structure that are spaced apart from each other, and the first blocking structure surrounds the second blocking structure.

10. The battery according to claim 3, characterized in that The blocking structure includes a first edge and a second edge that are continuously arranged, and an angle between the first edge and the second edge includes an obtuse angle.

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