Plasma processing apparatus

Abstract

The plasma processing apparatus includes a plasma processing chamber, a substrate supporting portion, an electrode or an antenna, a high-frequency power source, an electric power consuming component, and a power receiving coil. The substrate supporting part is arranged in the plasma processing chamber. The electrode or the antenna is disposed such that the space in the plasma processing chamber is located between the electrode or the antenna and the substrate support part. The high-frequency power supply can generate high-frequency electric power and is electrically connected with the substrate supporting part, the electrode or the antenna. The electrical power consuming component is disposed within the plasma processing chamber or within the substrate support portion. The power storage unit is electrically connected to the electric power consumption component. The power receiving coil is electrically connected to the power storage unit, and is capable of receiving electric power from the power feeding coil by electromagnetic induction coupling.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 356,713, filed on June 29, 2022, and entitled “Plasma Processing Apparatus,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] An exemplary embodiment of the present invention relates to a plasma processing apparatus. Background Art

[0004] A plasma processing device is used in plasma processing. The plasma processing device includes a chamber and a substrate support table (mounting table) arranged in the chamber. The substrate support table has a base (lower electrode) and an electrostatic chuck for holding the substrate. A temperature regulating element (such as a heater) for regulating the temperature of the substrate is provided inside the electrostatic chuck. In addition, a filter is provided between the temperature regulating element and the power supply for the temperature regulating element, and the filter can attenuate or block the high-frequency noise entering from the high-frequency electrode and / or other electrical components in the chamber to the power supply line and / or signal line and other lines. The following patent document 1 describes such a plasma processing device.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2015-173027 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] An exemplary embodiment of the present invention provides a technique for suppressing the transmission of high-frequency noise to a power source outside a plasma processing apparatus.

[0010] Means for solving technical problems

[0011] In an exemplary embodiment, a plasma processing device is provided. The plasma processing device includes a plasma processing chamber, a substrate support, a high-frequency power supply, an electrode or an antenna, at least one electric power consumption component and at least one power receiving coil. The substrate support is arranged in the plasma processing chamber. The electrode or the antenna is arranged in such a way that the space in the plasma processing chamber is located between the electrode or the antenna and the substrate support. The high-frequency power supply is capable of generating high-frequency electric power and is electrically connected to the substrate support, the electrode or the antenna. At least one electric power consumption component is arranged in the plasma processing chamber or in the substrate support. At least one power storage unit is electrically connected to at least one electric power consumption component. At least one power receiving coil is electrically connected to at least one power storage unit and is capable of receiving electric power from at least one feeding coil through electromagnetic induction coupling.

[0012] Effects of the Invention

[0013] According to an exemplary embodiment, it is possible to suppress the transmission of high-frequency noise to a power source outside a plasma processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0015] Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0016] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 4 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment.

[0018] Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0019] Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0020] Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0021] Figure 8 FIG. 1 is a diagram showing a power feeding unit according to an exemplary embodiment.

[0022] Fig. 9 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0023] Fig.10 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0024] Fig.11 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0025] Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment.

[0026] Fig.13 is a diagram showing an RF filter according to an exemplary embodiment.

[0027] Fig.14 FIG. 1 is a diagram showing a rectifying and smoothing unit according to an exemplary embodiment.

[0028] Fig.15 is a diagram showing an RF filter according to an exemplary embodiment.

[0029] Fig.16 FIG. 1 is a diagram showing a communication unit of a power feeding unit and a communication unit of a rectifying and smoothing unit according to an exemplary embodiment.

[0030] Fig.17 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0031] Fig.18 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0032] Fig.19 FIG. 1 is a diagram showing a communication section of a power feeding section and a communication section of a rectifying and smoothing section according to another exemplary embodiment.

[0033] Fig. 20 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0034] Fig.21 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0035] Fig. 22 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0036] Fig.23 (a) and Fig.23 (b) are diagrams showing a power storage unit according to an exemplary embodiment.

[0037] Fig.24 is a diagram showing a voltage controlled converter according to an exemplary embodiment.

[0038] Fig.25 It is a diagram showing a constant voltage control unit according to an exemplary embodiment.

[0039] Fig.26 It is a diagram showing a constant voltage control unit according to another exemplary embodiment.

[0040] Fig. 27 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0041] Fig.28 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0042] Fig.29 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0043] Fig.30 FIG. 1 is a diagram showing a configuration of a rectifying and smoothing unit according to an exemplary embodiment.

[0044] Fig.31 It is a diagram showing the configuration of a rectifying and smoothing unit according to another exemplary embodiment.

[0045] Fig.32 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0046] Fig.33 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0047] Fig.34 It is a diagram showing the arrangement of a rectifying and smoothing unit according to still another exemplary embodiment.

[0048] Fig.35 It is a diagram showing the configuration of a rectifying and smoothing unit according to still another exemplary embodiment.

[0049] Fig.36 It is a diagram showing the configuration of a rectifying and smoothing unit according to still another exemplary embodiment.

[0050] Fig.37 It is a diagram showing the arrangement of a rectifying and smoothing unit according to still another exemplary embodiment.

[0051] Fig.38 It is a diagram showing the arrangement of a rectifying and smoothing unit according to still another exemplary embodiment.

[0052] Fig.39 It is a diagram showing the configuration of a rectifying and smoothing unit according to still another exemplary embodiment.

[0053] Fig.40 It is a diagram showing an exemplary embodiment for reducing the potential difference between lines caused by conductive noise.

[0054] Fig.41 It is a diagram showing an exemplary embodiment for reducing the potential difference between lines caused by conductive noise.

[0055] Fig.42 It is a diagram showing an exemplary embodiment for reducing the potential difference between lines caused by conductive noise.

[0056] Fig.43 It is a diagram showing an exemplary embodiment for reducing the potential difference between lines caused by conductive noise.

[0057] Fig.44 FIG. 1 is a diagram showing a rectifying and smoothing unit according to another exemplary embodiment.

[0058] Fig.45 It is a diagram showing a rectifying and smoothing unit according to still another exemplary embodiment.

[0059] Fig.46 It is a diagram showing a rectifying and smoothing unit according to still another exemplary embodiment.

[0060] Fig.47 FIG. 1 is a diagram showing a rectifying and smoothing unit and a constant voltage control unit according to another exemplary embodiment.

[0061] Fig.48 This is a timing chart showing an example of the output voltage in the power receiving coil unit and the signals output from each unit of the rectifying and smoothing unit.

[0062] Fig.49 is with Fig.47 An example of a timing chart related to the constant voltage control unit shown.

[0063] Fig.50 is with Fig.47 An example of a timing chart related to the constant voltage control unit shown.

[0064] Fig.51 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0065] Fig.52 This is a diagram showing a power storage unit in a plasma processing apparatus according to still another exemplary embodiment.

[0066] Fig.53 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0067] Fig.54This is a diagram showing a power storage unit in a plasma processing apparatus according to still another exemplary embodiment.

[0068] Fig.55 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0069] Fig.56 FIG. 1 is a diagram showing the connection of a plurality of voltage control converters in a plasma processing apparatus according to still another exemplary embodiment.

[0070] Fig.57 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0071] Fig.58 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0072] Fig.59 FIG. 1 is a diagram showing the connection of a plurality of voltage control converters in a plasma processing apparatus according to still another exemplary embodiment.

[0073] Fig.60 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0074] Fig.61 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0075] Fig.62 It is a diagram showing a rectifying and smoothing unit according to still another exemplary embodiment.

[0076] Fig.63 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0077] Fig.64 It is a diagram showing a rectifying and smoothing unit according to still another exemplary embodiment.

[0078] Fig.65 It is a diagram showing a power receiving coil unit and a power feeding coil unit in a plasma processing apparatus according to still another exemplary embodiment.

[0079] Fig.66 It is a diagram showing a power receiving coil unit and a power feeding coil unit in a plasma processing apparatus according to still another exemplary embodiment.

[0080] Fig.67 It is a diagram showing a power receiving coil unit and a power feeding coil unit in a plasma processing apparatus according to still another exemplary embodiment.

[0081] Fig.68This is a flowchart of a method for storing electricity in a power storage unit according to an exemplary embodiment. DETAILED DESCRIPTION

[0082] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0083] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0084] The plasma generating unit 12 is capable of generating plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-Resonance Plasma: Electron Cyclotron Resonance Plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current: Alternating Current) plasma generating unit and a DC (Direct Current: Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0085] The control unit 2 is capable of processing computer-executable commands, which are used to cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 is capable of controlling the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 is capable of reading a program from the storage unit 2a2 and performing various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0086] Next, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0087] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is capable of introducing at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0088] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has: a central area 111a for supporting a substrate W; and an annular area 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular area 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0089] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode (also called an adsorption electrode, a chuck electrode, or a clamping electrode) 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or may be arranged on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 described later may be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode can function as a lower electrode. In the case where a bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0090] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0091] In addition, the substrate support portion 11 may include a temperature regulating module for regulating at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature regulating module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as salt water or gas may flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion for supplying a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0092] The shower head 13 can introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a can be introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, the gas introduction part may include, in addition to the shower head 13, one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed on the side wall 10a.

[0093] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is capable of supplying at least one process gas from the gas source 21 corresponding to each other to the shower head 13 via the flow controller 22 corresponding to each other. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0094] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 can supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced (attracted) to the substrate W.

[0095] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and can generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a can generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0096] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be capable of generating a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0097] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is capable of generating a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0098] In various embodiments, the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform in the shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0099] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0100] In addition, in a capacitive coupling type plasma processing apparatus 1, an upper electrode is arranged in such a manner that a plasma processing space is located between the upper electrode and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the upper electrode or the lower electrode in the substrate support portion 11. In the case where the plasma processing apparatus 1 is an inductive coupling type plasma processing apparatus, an antenna is arranged in such a manner that a plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna. In the case where the plasma processing apparatus 1 is a plasma processing apparatus that generates plasma using surface waves such as microwaves, the antenna is arranged in such a manner that a plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna via a waveguide.

[0101] Various exemplary embodiments of plasma processing apparatuses are described below. Each of the plasma processing apparatuses described below can supply power to at least one power consuming component in the chamber 10 by wireless power supply (electromagnetic induction coupling) and can have the same structure as the plasma processing apparatus 1 .

[0102] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Figure 3 The plasma processing apparatus 100A shown in FIG. 1 includes at least one high frequency power source 300, a power receiving coil unit 140, a power storage unit 160, and at least one power consumption component 240 (see FIG. 1 ). Fig.25 and Fig.26 The plasma processing apparatus 100A may further include a power feeding unit 120 , a power feeding coil unit 130 , a rectifying and smoothing unit 150 , a constant voltage control unit 180 (an example of a voltage control unit), a ground frame 110 , and a matching unit 301 .

[0103] At least one high frequency power source 300 includes a first RF generating section 31a and / or a second RF generating section 32a. At least one high frequency power source 300 is electrically connected to the substrate supporting section 11 via a matching section 301. The matching section 301 includes at least one impedance matching circuit.

[0104] The ground frame 110 includes the chamber 10 and is electrically grounded. The ground frame 110 electrically separates the space 110h (RF-Hot space) inside the ground frame 110 from the space 110a (air space) outside. The ground frame 110 surrounds the substrate support portion 11 arranged in the space 110h. In the plasma processing device 100A, the rectifying and smoothing portion 150, the power storage portion 160 and the constant voltage control portion 180 are arranged in the space 110h. In addition, in the plasma processing device 100A, the feeding portion 120, the feeding coil portion 130 and the receiving coil portion 140 are arranged in the space 110a.

[0105] The equipment arranged in the space 110a, namely the feeding unit 120, the feeding coil unit 130 and the receiving coil unit 140, etc., is covered by a metal shell formed of a metal such as aluminum, and the metal shell is grounded. Thus, it is possible to suppress the leakage of high-frequency noise caused by high-frequency electric power such as the first RF signal and / or the second RF signal. The metal shell and each power supply line have an insulation distance between them. In addition, in the following description, the high-frequency electric power such as the first RF signal and / or the second RF signal, that is, the high-frequency electric power transmitted to the feeding unit 120, is sometimes referred to as high-frequency noise, common mode noise or conductive noise.

[0106] The power feeding unit 120 is electrically connected between the AC power source 400 (e.g., industrial frequency AC power source) and the power feeding coil unit 130. The power feeding unit 120 can receive the frequency of the AC power from the AC power source 400, convert the frequency of the AC power into a transmission frequency, and thereby generate AC power having the transmission frequency, that is, transmission AC power.

[0107] The feeding coil unit 130 includes a feeding coil 131 (see Fig. 9 The power feeding coil 131 is electrically connected to the power feeding unit 120 . The power feeding coil 131 can receive the transmission AC power from the power feeding unit 120 and wirelessly transmit the transmission AC power to the power receiving coil 141 .

[0108] The power receiving coil unit 140 includes a power receiving coil 141 (see Fig. 9). The receiving coil 141 is electromagnetically inductively coupled to the feeding coil 131. Electromagnetic inductive coupling includes magnetic field coupling and electric field coupling. In addition, magnetic field coupling includes magnetic field resonance (also called magnetic resonance). The distance between the receiving coil 141 and the feeding coil 131 is set to be able to suppress common mode noise (conductive noise). In addition, the distance between the receiving coil 141 and the feeding coil 131 is set to be a distance that can supply power. The distance between the receiving coil 141 and the feeding coil 131 is set so that the attenuation of high-frequency electric power (i.e., high-frequency noise) between the receiving coil 141 and the feeding coil 131 becomes less than a threshold value, and the electric power from the feeding coil 131 can be received in the receiving coil 141. The threshold value of the attenuation amount is set to a value that can fully prevent damage or malfunction of the feeding unit 120. The threshold value of the attenuation amount is, for example, -20 dB. The transmission AC power received by the receiving coil unit 140 is output to the rectification and smoothing unit 150.

[0109] The rectifying and smoothing unit 150 is electrically connected between the power receiving coil unit 140 and the power storage unit 160. The rectifying and smoothing unit 150 generates DC power by performing full-wave rectification and smoothing on the AC power transmitted from the power receiving coil unit 140. The DC power generated by the rectifying and smoothing unit 150 is stored in the power storage unit 160. The power storage unit 160 is electrically connected between the rectifying and smoothing unit 150 and the constant voltage control unit 180. In addition, the rectifying and smoothing unit 150 may generate DC power by performing half-wave rectification and smoothing on the AC power transmitted from the power receiving coil unit 140.

[0110] The rectifying and smoothing unit 150 and the feeding unit 120 are electrically connected to each other via the signal line 1250. The rectifying and smoothing unit 150 sends an instruction signal to the feeding unit 120 via the signal line 1250. The instruction signal is a signal for instructing the feeding unit 120 to supply the transmitted AC power or stop the supply of the transmitted AC power. The instruction signal may include a state signal, an abnormality detection signal, and a cooling control signal for the feeding coil unit 130 and the receiving coil unit 140. The state signal is a voltage detector 155v (refer to Fig.14 ) and current detector 155i (refer to Fig.14 ) The value of the voltage, current, electric power and / or phase detected by the power supply 120. The abnormality detection signal is a signal for transmitting the failure of the rectification and smoothing unit 150 and / or the occurrence of temperature abnormality to the power supply 120. The cooling control signal is used to control the cooling mechanism provided in the power supply coil unit 130 and the power receiving coil unit 140. The cooling control signal controls the speed of the fan in the case of air cooling, for example. In addition, in the case of liquid cooling, the flow rate and / or temperature of the refrigerant are controlled.

[0111] The constant voltage control unit 180 applies a voltage to at least the power consumption component 240 using the electric power stored in the power storage unit 160. The constant voltage control unit 180 can control the application of the voltage to at least the power consumption component 240 and the stop thereof.

[0112] In the plasma processing apparatus 100A, the power receiving coil 141 can function as a filter for high-frequency noise caused by high-frequency electric power such as the first RF signal and / or the second RF signal, thereby suppressing the high-frequency noise from being transmitted to the power supply outside the plasma processing apparatus.

[0113] Reference Figure 4 . Figure 4 FIG. 1 is a diagram schematically showing another exemplary embodiment of a plasma processing apparatus. Figure 4 The plasma processing apparatus 100B shown will be described from the viewpoint of differences from the plasma processing apparatus 100A.

[0114] The plasma processing apparatus 100B further includes a voltage control converter 170. The voltage control converter 170 is a DC-DC converter, and is connected between the power storage unit 160 and the constant voltage control unit 180. The voltage control converter 170 can be configured to input a constant output voltage to the constant voltage control unit 180 even when a voltage fluctuation occurs in the power storage unit 160. In addition, the voltage fluctuation in the power storage unit 160 may occur as a voltage drop corresponding to the stored electric power, for example, when the power storage unit 160 is formed of an electric double layer.

[0115] Reference Figure 5 . Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 5 The plasma processing apparatus 100C shown will be described from the viewpoint of differences from the plasma processing apparatus 100B.

[0116] The plasma processing apparatus 100C further includes an RF filter 190. The RF filter 190 is connected between the rectifying and smoothing section 150 and the feeding section 120. The RF filter 190 constitutes a portion of the signal line 1250. The RF filter 190 has a characteristic of suppressing the transmission of high-frequency electric power (high-frequency noise) via the signal line 1250. That is, the RF filter 190 includes a low-pass filter having a high impedance to high-frequency noise (conductive noise) but having a characteristic of passing an indication signal of a relatively low frequency.

[0117] In the plasma processing device 100C, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are formed as one body (integrated). That is, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are all arranged in a single metal shell, or formed on a single circuit board. As a result, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other are shortened. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other can be made equal to each other. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be shortened. In addition, the lengths of a pair of power supply lines connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be made equal to each other. Therefore, it is possible to suppress malfunction and damage of the device caused by normal mode noise (potential difference between the positive line and the negative line). Furthermore, when other metal bodies are provided around the shell in the chamber 10 for shielding electromagnetic fields, the single shell may not be made of metal.

[0118] Reference Figure 6 . Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 6 The plasma processing apparatus 100D shown will be described from the viewpoint of differences from the plasma processing apparatus 100C.

[0119] The plasma processing apparatus 100D does not include the RF filter 190. In the plasma processing apparatus 100D, the rectifying and smoothing section 150 includes a communication section 151 as a wireless section. In addition, the feeding section 120 includes a communication section 121 as a wireless section. The above-mentioned instruction signal is transmitted between the rectifying and smoothing section 150 and the feeding section 120 using the communication section 151 and the communication section 121. The details of the communication section 121 and the communication section 151 will be described later.

[0120] Reference Figure 7 . Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 7 The plasma processing apparatus 100E shown will be described from the viewpoint of differences from the plasma processing apparatus 100D.

[0121] The plasma processing apparatus 100E further includes an RF filter 200. The RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 has a characteristic of reducing or blocking high frequency noise transmitted from the power receiving coil unit 140 to the power feeding coil 131 and the power feeding unit 120. The details of the RF filter 200 will be described later.

[0122] The structures of various components for wireless power supply in the plasma processing apparatus according to various exemplary embodiments will be described in detail below.

[0123] [Structure of the power feeder]

[0124] Figure 8 1 is a diagram showing a feeder according to an exemplary embodiment. As described above, the feeder 120 can receive the frequency of the AC power from the AC power source 400 and convert the frequency of the AC power into a transmission frequency, thereby generating a transmission AC power having the transmission frequency.

[0125] In one embodiment, the feeder 120 includes a control unit 122, a rectifying and smoothing unit 123, and an inverter 124. The control unit 122 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array).

[0126] The rectifying and smoothing unit 123 includes a rectifying circuit and a smoothing circuit. The rectifying circuit includes, for example, a diode bridge. The smoothing circuit includes, for example, a line capacitor. The rectifying and smoothing unit 123 generates a DC power by performing full-wave rectification and smoothing on the AC power from the AC power supply 400. In addition, the rectifying and smoothing unit 123 may also generate a DC power by performing half-wave rectification and smoothing on the AC power from the AC power supply 400.

[0127] The inverter 124 generates a transmission AC power having a transmission frequency from the DC power output by the rectifying and smoothing section 123. The inverter 124 is, for example, a full-bridge inverter including a plurality of triacs or a plurality of switching elements (e.g., FETs). The inverter 124 generates the transmission AC power by ON / OFF control of the plurality of triacs or the plurality of switching elements by the control section 122. The transmission AC power output from the inverter 124 is output to the feeding coil section 130.

[0128] The feeding section 120 may further include a voltage detector 125v, a current detector 125i, a voltage detector 126v, and a current detector 126i. The voltage detector 125v detects a voltage value between a pair of power supply lines connecting the rectifying and smoothing section 123 and the inverter 124 to each other. The current detector 125i detects a current value between the rectifying and smoothing section 123 and the inverter 124. The voltage detector 126v detects a voltage value between a pair of power supply lines connecting the inverter 124 and the feeding coil section 130 to each other. The current detector 126i detects a current value between the inverter 124 and the feeding coil section 130. The voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i are notified to the control section 122.

[0129] The feeding unit 120 includes the above-mentioned communication unit 121. The communication unit 121 includes a driver 121d, a transmitter 121tx, and a receiver 121rx. The transmitter 121tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 121rx is a receiver of a wireless signal or a receiver of an optical signal. The communication unit 121 drives the transmitter 121tx through the driver 121d, and outputs the signal from the control unit 122 from the transmitter 121tx as a wireless signal or an optical signal. The signal output from the transmitter 121tx is transmitted to the communication unit 151 (see FIG. 151 ) described later. Fig.14 ) is received. In addition, the communication unit 121 receives a signal such as the above-mentioned instruction signal from the communication unit 151 through the receiver 121rx, and inputs the received signal to the control unit 122 via the driver 121d. The control unit 122 controls the inverter 124 in accordance with the instruction signal received from the communication unit 151 via the communication unit 121, the voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i, thereby switching the output and stopping of the transmission of AC power.

[0130] [Power feeding coil section and power receiving coil section]

[0131] Reference Figures 9 to 11 . Figures 9 to 11 Each of the figures shows a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment. Fig. 9As shown, the feeding coil unit 130 may include a resonant capacitor 132a and a resonant capacitor 132b in addition to the feeding coil 131. The resonant capacitor 132a is connected between one of a pair of power supply lines that connect the feeding unit 120 and the feeding coil unit 130 to each other and one end of the feeding coil 131. The resonant capacitor 132b is connected between the other of the pair of power supply lines and the other end of the feeding coil 131. The feeding coil 131, the resonant capacitor 132a and the resonant capacitor 132b constitute a resonant circuit for the transmission frequency. That is, the feeding coil 131, the resonant capacitor 132a and the resonant capacitor 132b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the feeding coil unit 130 may not include any of the resonant capacitor 132a and the resonant capacitor 132b.

[0132] like Fig.10 and Fig.11 As shown, the feeding coil unit 130 may further include a metal shell 130g. The metal shell 130g has an open end and is grounded. The feeding coil 131 is arranged in the metal shell 130g in a manner to ensure the insulation distance. The feeding coil unit 130 may further include a heat sink 134, a ferrite component 135 and a thermally conductive sheet 136. The heat sink 134 is arranged in the metal shell 130g and supported by the metal shell 130g. The ferrite component 135 is arranged on the heat sink 134. The thermally conductive sheet 136 is arranged on the ferrite component 135. The feeding coil 131 is arranged on the thermally conductive sheet 136 and is opposite to the receiving coil 141 across the open end of the metal shell 130g. As shown in FIG. Fig.11 As shown, a resonant capacitor 132a and a resonant capacitor 132b may also be housed in the metal housing 130g.

[0133] like Fig. 9 As shown, the power receiving coil unit 140 includes a power receiving coil 141. The power receiving coil 141 can be electromagnetically inductively coupled with the power feeding coil 131. In addition to the power receiving coil 141, the power receiving coil unit 140 may include a resonant capacitor 142a and a resonant capacitor 142b. The resonant capacitor 142a is connected between one of a pair of power supply lines extending from the power receiving coil unit 140 and one end of the power receiving coil 141. The resonant capacitor 142b is connected between the other of the pair of power supply lines and the other end of the power receiving coil 141. The power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b constitute a resonant circuit for the transmission frequency. That is, the power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the power receiving coil unit 140 may not include any of the resonant capacitor 142a and the resonant capacitor 142b.

[0134] like Fig.10 and Fig.11As shown, the power receiving coil unit 140 may further include a metal shell 140g. The metal shell 140g has an open end and is grounded. The power receiving coil 141 is arranged in the metal shell 140g in a manner to ensure the insulation distance. The power receiving coil unit 140 may further include a spacer 143, a heat sink 144, a ferrite component 145 and a thermally conductive sheet 146. The spacer 143 is arranged in the metal shell 140g and is supported by the metal shell 140g. The spacer 143 will be described later. The heat sink 144 is arranged on the spacer 143. The ferrite component 145 is arranged on the heat sink 144. The thermally conductive sheet 146 is arranged on the ferrite component 145. The power receiving coil 141 is arranged on the thermally conductive sheet 146, and is opposite to the power feeding coil 131 across the open end of the metal shell 140g. As shown in FIG. Fig.11 As shown, a resonant capacitor 142a and a resonant capacitor 142b may also be housed in the metal housing 140g.

[0135] The spacer 143 is formed of a dielectric and is provided between the power receiving coil 141 and the metal casing 140g (ground). The spacer 143 can provide a spatial parasitic capacitance between the power receiving coil 141 and the ground.

[0136] [Impedance characteristics of the power receiving coil]

[0137] Reference Fig.12 . Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment. Fig.12 140g represents the impedance characteristics of the power receiving coil unit 140 according to the thickness of the spacer 143. The thickness of the spacer 143 corresponds to the distance between the heat sink 144 and the metal housing 140g. Fig.12 As shown, the power receiving coil unit 140 can adjust the frequency f according to the thickness of the spacer 143. H and frequency f L Therefore, according to the power receiving coil unit 140, high impedance can be provided at the frequencies of two high-frequency electric powers used in the plasma processing device, such as the first RF signal and the second RF signal. In addition, high impedance can be obtained in the power receiving coil unit 140, so the loss of high-frequency electric power can be suppressed, and a high processing rate (for example, etching rate) can be obtained.

[0138] [RF filter 200]

[0139] Reference Fig.13 . Fig.13 FIG. 1 is a diagram showing an RF filter according to an exemplary embodiment. Fig.13As shown, the RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 includes an inductor 201a, an inductor 201b, a terminal capacitor 202a, and a terminal capacitor 202b. One end of the inductor 201a is connected to the resonant capacitor 142a, and the other end of the inductor 201a is connected to the rectifying and smoothing unit 150. One end of the inductor 201b is connected to the resonant capacitor 142b, and the other end of the inductor 201b is connected to the rectifying and smoothing unit 150. The terminal capacitor 202a is connected between one end of the inductor 201a and the ground. The terminal capacitor 202b is connected between one end of the inductor 201b and the ground. The inductor 201a and the terminal capacitor 202a form a low-pass filter. In addition, the inductor 201b and the terminal capacitor 202b form a low-pass filter. The RF filter 200 can provide high impedance at the frequencies of two high frequency electric powers used in a plasma processing device, such as the first RF signal and the second RF signal, thereby suppressing the loss of high frequency electric power and achieving a high processing rate (eg, etching rate).

[0140] [Rectifier and Smoothing Department]

[0141] Reference Fig.14 . Fig.14 1 is a diagram showing a rectifying and smoothing unit of an exemplary embodiment. In one embodiment, the rectifying and smoothing unit 150 includes a control unit 152, a rectifying circuit 153, and a smoothing circuit 154. The rectifying circuit 153 is connected between the power receiving coil unit 140 and the smoothing circuit 154. The smoothing circuit 154 is connected between the rectifying circuit 153 and the power storage unit 160. The control unit 152 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array). In addition, the control unit 152 may be the same as the control unit 122 or different.

[0142] The rectifier circuit 153 outputs power generated by full-wave rectifying the AC power from the power receiving coil unit 140. The rectifier circuit 153 is, for example, a diode bridge. Alternatively, the rectifier circuit 153 may output power generated by half-wave rectifying the AC power from the power receiving coil unit 140.

[0143] The smoothing circuit 154 generates DC power by smoothing the power from the rectifying circuit 153. The smoothing circuit 154 may include an inductor 1541a, a capacitor 1542a, and a capacitor 1542b. One end of the inductor 1541a is connected to one of a pair of inputs of the smoothing circuit 154. The other end of the inductor 1541a is connected to the positive output (V OUT+The positive output of the rectifying and smoothing unit 150 is connected via a positive line 160p (see Fig.23 (a) and Fig.23 (b)) is connected to one end of each of one or more capacitors of the power storage unit 160.

[0144] One end of the capacitor 1542a is connected to one of the pair of inputs of the smoothing circuit 154 and one end of the inductor 1541a. The other end of the capacitor 1542a is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- The negative output of the rectifying and smoothing unit 150 is connected via a negative line 160m (see Fig.23 (a) and Fig.23 (b)) is connected to the other end of each of the one or more capacitors of the power storage unit 160. One end of the capacitor 1542b is connected to the other end of the inductor 1541a. The other end of the capacitor 1542b is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- )connect.

[0145] The rectifying and smoothing unit 150 may further include a voltage detector 155v and a current detector 155i. The voltage detector 155v detects a voltage value between a positive output and a negative output of the rectifying and smoothing unit 150. The current detector 155i detects a current value between the rectifying and smoothing unit 150 and the power storage unit 160. The voltage value detected by the voltage detector 155v and the current value detected by the current detector 155i are notified to the control unit 152. The control unit 152 generates the above-mentioned instruction signal in accordance with the electric power stored in the power storage unit 160. For example, when the electric power stored in the power storage unit 160 is less than the first threshold value, the control unit 152 generates an instruction signal for instructing the feeding unit 120 to supply power, that is, output and transmit AC electric power. The first threshold value is, for example, the electric power consumption of a load such as the electric power consumption component 240. In addition, it may be a value obtained by multiplying the electric power consumption of the load such as the electric power consumption component 240 by a certain value (for example, a value in a range of 1 to 3) in consideration of a margin. On the other hand, when the electric power stored in the power storage unit 160 is greater than the second threshold value, the control unit 152 generates an instruction signal for instructing the power feeding unit 120 to stop supplying power, that is, to stop outputting and transmitting AC electric power. The second threshold value is a value that does not exceed the limit storage electric power of the power storage unit 160. The second threshold value is, for example, a value obtained by multiplying the limit storage electric power of the power storage unit 160 by a certain value (for example, a value less than 1).

[0146] The rectifying and smoothing section 150 includes the above-mentioned communication section 151. The communication section 151 includes a driver 151d, a transmitter 151tx, and a receiver 151rx. The transmitter 151tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 151rx is a receiver of a wireless signal or a receiver of an optical signal. The communication section 151 drives the transmitter 151tx through the driver 151d, so that a signal from the control section 122 such as an instruction signal is output from the transmitter 151tx as a wireless signal or an optical signal. The signal output from the transmitter 151tx is received by the communication section 121 of the feeding section 120. In addition, the communication section 151 receives a signal from the communication section 121 through the receiver 151rx, and inputs the received signal to the control section 152 via the driver 151d.

[0147] [RF filter 190]

[0148] Reference Fig.15 . Fig.15 FIG. 1 is a diagram showing an RF filter 190 according to an exemplary embodiment. Fig.15 As shown, the signal line 1250 may include a first signal line electrically connecting the signal output (Tx) of the feed section 120 with the signal input (Rx) of the rectifying and smoothing section 150, and a second signal line electrically connecting the signal input (Rx) of the feed section 120 with the signal output (Tx) of the rectifying and smoothing section 150. The signal line 1250 may include a signal line connecting the first reference voltage terminal (VCC) of the feed section 120 with the first reference voltage terminal (VCC) of the rectifying and smoothing section 150, and a signal line connecting the second reference voltage terminal (GND) of the feed section 120 with the second reference voltage terminal (GND) of the rectifying and smoothing section 150. The signal line 1250 may be a shielded cable covered by a shield of ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield one by one, or may be covered by the shield together. The RF filter 190 provides a low-pass filter to each of the plurality of signal lines constituting the signal line 1250. The low-pass filter may be an LC filter including an inductor and a capacitor. The inductor of the low-pass filter constitutes a portion of the corresponding signal line. The capacitor is connected between one end of the inductor connected to the feeder 120 and the ground. By using the RF filter 190, it is possible to suppress the transmission of high-frequency electric power (high-frequency noise) via the signal line 1250 between the rectifying and smoothing unit 150 and the feeder 120.

[0149] [Communication section of the power feeding section and communication section of the rectifying and smoothing section]

[0150] Reference Figure 16 to Figure 18 . Fig.16 FIG. 1 is a diagram showing a communication unit of a power feeding unit and a communication unit of a rectifying and smoothing unit according to an exemplary embodiment. Fig.17 and Fig.18 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 6 , Figure 7 , Fig.16 , Fig.17 and Fig.18 As shown, the communication unit 121 and the communication unit 151 can be configured to transmit signals such as the above-mentioned indication signal between each other via wireless communication. Communication via wireless communication can also be performed by optical communication. In the case where the communication unit 121 and the communication unit 151 transmit signals between them via wireless communication, the communication unit 121 and the communication unit 151 can be arranged in any position as long as there is no obstruction between them. According to the examples shown in these figures, the RF filter 190 is not required. In addition, in the case including Figure 16 to Figure 18 In various exemplary embodiments of the examples shown, the signal line 1250 may be a shielded cable covered by a shield at ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield individually or together.

[0151] Reference Figure 19 to Figure 22 . Fig.19 FIG. 1 is a diagram showing a communication section of a power feeding section and a communication section of a rectifying and smoothing section according to another exemplary embodiment. Figure 20 to Figure 22 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 19 to Figure 22 As shown in the figure, the communication unit 121 and the communication unit 151 can be configured to transmit a signal (optical signal) such as the above-mentioned instruction signal between each other via the optical fiber 1260, that is, by optical fiber communication. In the case where the communication unit 121 and the communication unit 151 transmit signals between them via the optical fiber 1260, the communication unit 121 and the communication unit 151 can be arranged at any position as long as the bending radius of the optical fiber 1260 is within the allowable range. In the examples shown in these figures, the RF filter 190 is also not required.

[0152] [Electricity storage unit]

[0153] Reference Fig.23 (a) and Fig.23 (b). Fig.23 (a) and Fig.23 (b) and (c) are diagrams showing a power storage unit according to an exemplary embodiment. Fig.23 As shown in (a), the power storage unit 160 includes a capacitor 161. The capacitor 161 is connected between a pair of power supply lines, that is, a positive line 160p and a negative line 160m. The positive line 160p is connected from the positive output (V OUT+) extends toward the load. The negative line 160m extends from the negative output (V OUT- ) extends toward the load. Capacitor 161 may be a polarized capacitor. Capacitor 161 may also be a double-layer battery or a lithium-ion battery.

[0154] like Fig.23 As shown in (b), the storage unit 160 may include a plurality of capacitors 161. The plurality of capacitors 161 are connected in series between the positive line 160p and the negative line 160m. The plurality of capacitors 161 may have the same electrostatic capacitance as each other, or may have electrostatic capacitances different from each other. Each of the plurality of capacitors 161 may be a polarized capacitor. Each of the plurality of capacitors 161 may also be an electric double layer battery or a lithium ion battery. The storage unit 160 needs to be used under the condition that the total value of the input voltage corresponding thereto and the line potential difference caused by normal mode noise is lower than the allowable input voltage. In the case where the storage unit 160 includes a plurality of capacitors 161 connected in series, the allowable input voltage of the storage unit 160 becomes higher. Therefore, according to Fig.23 In the example shown in (b), the noise resistance of the power storage unit 160 is improved.

[0155] [Voltage Control Converter]

[0156] Reference Fig.24 . Fig.24 1 is a diagram showing a voltage control converter according to an exemplary embodiment. The voltage control converter 170 is a DC-DC converter. The voltage control converter 170 is connected between the power storage unit 160 and the constant voltage control unit 180. The positive line 160p is connected to the positive input (V IN+ ) is connected. The negative line 160m is connected to the negative input (V IN- ) connection. The positive output (V OUT+ ) and the positive input (V IN+ ) is connected. The negative output (V OUT- ) and the negative input (V IN- )connect.

[0157] The voltage control converter 170 may include a control unit 172, a low pass filter 173, a transformer 174, and a capacitor 175. The low pass filter 173 may include an inductor 1731a, a capacitor 1732a, and a capacitor 1732b. One end of the inductor 1731a is connected to the positive input (V IN+ ) is connected. The other end of the inductor 1731a is connected to one end of the primary side coil of the transformer 174. One end of the capacitor 1732a is connected to one end of the inductor 1731a and the positive input (VIN+ ) is connected. The other end of the capacitor 1732a is connected to the negative input (V IN- ) is connected. One end of the capacitor 1732b is connected to the other end of the inductor 1731a. The other end of the capacitor 1732b is connected to the negative input (V IN- )connect.

[0158] The transformer 174 includes a primary coil 1741, a secondary coil 1742, and a switch 1743. The other end of the primary coil 1741 is connected to the negative input (V IN- ) is connected. One end of the secondary side coil 1742 is connected to one end of the capacitor 175 and the positive output (V OUT+ The other end of the secondary coil 1742 is connected to the other end of the capacitor 175 and the negative output (V OUT- )connect.

[0159] The driver 1744 is connected to the switch 1743. The driver 1744 turns the switch 1743 on and off. When the switch 1743 is closed, that is, when the other end of the primary side coil 1741 and the negative input (V IN- ) is in the on state, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is connected, and the DC power from the voltage control converter 170 is supplied to the constant voltage control unit 180. On the other hand, when the switch 1743 is turned off, that is, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is in a non-conducting state, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is disconnected, and the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180 is cut off.

[0160] The voltage control converter 170 may further include a voltage detector 176v and a current detector 176i. The voltage detector 176v detects a voltage value between both ends of the secondary side coil 1742 or a voltage value between the positive output and the negative output of the voltage control converter 170. The current detector 176i measures a current value between the other end of the secondary side coil 1742 and the negative output of the voltage control converter 170. The voltage value detected by the voltage detector 176v and the current value detected by the current detector 176i are notified to the control unit 172. In addition, the control unit 172 may be the same as or different from at least one of the control unit 122 and the control unit 152.

[0161] When the voltage value detected by the voltage detector 176v is greater than the threshold value, the control unit 172 controls the driver 1744 to cut off the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180. The voltage value between the positive output and the negative output of the voltage control converter 170 is the sum of the output voltage value of the voltage control converter 170 and the line potential difference caused by the normal mode noise. In this embodiment, it is possible to suppress the damage of the load of the voltage control converter 170 caused by the overvoltage caused by the line potential difference caused by the normal mode noise.

[0162] [Constant pressure control unit]

[0163] Reference Fig.25 and Fig.26 . Fig.25 and Fig.26 The constant voltage control unit 180 is connected between the power storage unit 160 and at least one power consumption component 240 and can control the application of voltage (application of DC voltage) to at least one power consumption component 240 and stop thereof.

[0164] The constant voltage control unit 180 includes a control unit 182 and at least one switch 183. The positive input (V IN+ ) is connected to the power consumption component 240 via the switch 183. The negative input (V IN- ) is connected to the electric power consumption component 240. The switch 183 is controlled by the control unit 182. When the switch 183 is closed, the DC voltage from the constant voltage control unit 180 is applied to the electric power consumption component 240. When the switch 183 is opened, the application of the DC voltage from the constant voltage control unit 180 to the electric power consumption component 240 is stopped. In addition, the control unit 182 may be the same as or different from at least any one of the control unit 122, the control unit 152, and the control unit 172.

[0165] exist Fig.25 and Fig.26 In the illustrated embodiment, the plasma processing apparatus includes a plurality of power consumption components 240. The constant voltage control unit 180 includes a control unit 182 and a plurality of switches 183. The positive input (V IN+ ) is connected to a plurality of power consumption components 240 via a plurality of switches 183. The negative input (V IN- ) is connected to multiple power consumption components 240.

[0166] exist Fig.25 and Fig.26In the illustrated embodiment, the plurality of electric power consumption components 240 may include a plurality of heaters (resistance heating elements). The plurality of heaters may be disposed within the substrate support portion 11. Fig.25 In the illustrated embodiment, a plurality of resistors 260 are arranged near each of the plurality of heaters. Each of the plurality of resistors 260 has a resistance value that changes according to temperature. Each of the plurality of resistors 260 is, for example, a thermistor. Each of the plurality of resistors 260 is connected in series with a reference resistor (not shown). The constant voltage control unit 180 includes a plurality of measuring units 184. Each of the plurality of measuring units 184 can apply a reference voltage to the series connection of a corresponding resistor among the plurality of resistors 260 and a reference resistor to detect a voltage value between both ends of the resistor. Each of the plurality of measuring units 184 notifies the control unit 182 of the detected voltage value. The control unit 182 determines the temperature of the area where the corresponding heater among the plurality of heaters is arranged from the notified voltage value, and controls the application of the DC voltage to the corresponding heater so that the temperature of the area approaches the target temperature. In addition, an optical fiber thermometer may be arranged instead of the plurality of resistors 260. In this case, wiring between the plurality of resistors 260 and the plurality of measuring units 184 is not required, and therefore, the influence of high-frequency conductive noise on the electric power consumption component 240 can be eliminated.

[0167] exist Fig.26 In the illustrated embodiment, the constant voltage control unit 180 includes a voltage detector 185v and a plurality of current detectors 185i. The voltage detector 185v detects the voltage value applied to each of the plurality of heaters. The plurality of current detectors 185i measure the value of the current supplied to the corresponding heater among the plurality of heaters, that is, the current value. The plurality of measuring units 184 determine the resistance value of the corresponding heater among the plurality of heaters based on the current value detected by the corresponding current detector among the plurality of current detectors 185i and the voltage value detected by the voltage detector 185v. The control unit 182 determines the temperature of each of the plurality of areas where the plurality of heaters are respectively configured based on the resistance value detected by each of the plurality of heaters. The control unit 182 controls the application of the DC voltage to each of the plurality of heaters so that the temperature of each of the plurality of areas approaches the target temperature.

[0168] [Exemplary Embodiment of Integration of Rectification and Smoothing Unit and Power Storage Unit]

[0169] Reference Figure 27 to Figure 29 . Figure 27 to Figure 29 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 27 to Figure 29 The plasma processing apparatuses 100Ga, 100Gb, and 100Gc are shown respectively, and are respectively arranged relative to the plasma processing apparatus 100E (see Figure 7 ) from different perspectives.

[0170] In each of the plasma processing devices 100Ga, 100Gb, and 100Gc, the rectifying and smoothing unit 150 and the power storage unit 160 are formed as one body (integrated) with each other. That is, in each of the plasma processing devices 100Ga, 100Gb, and 100Gc, the rectifying and smoothing unit 150 and the power storage unit 160 are both arranged in a single metal shell, or formed on a single circuit board. In each of the plasma processing devices 100Ga, 100Gb, and 100Gc, an insulation distance can be ensured between each of the rectifying and smoothing unit 150 and the power storage unit 160 and the ground frame 110. In addition, in each of the plasma processing devices 100Ga, 100Gb, and 100Gc, the feeding coil unit 130 (or the feeding coil 131) and the receiving coil unit 140 (or the receiving coil 141) can be arranged in a single metal shell that is grounded.

[0171] It can be Fig. 27 As shown, the rectifying and smoothing unit 150 and the power storage unit 160 are both arranged in the space 110h. Fig.28 As shown in FIG. 1 , the rectifying and smoothing unit 150 and the power storage unit 160 are both arranged in the space 110a. Fig.28 As shown, the RF filter 200 is connected between the power storage unit 160 and the voltage control converter 170 disposed in the space 110h. Fig.29 As shown, the rectifying and smoothing unit 150, the power storage unit 160 and the voltage control converter 170 are all arranged in the space 110a. In addition, an RF filter 200 may be connected between the power storage unit 160 and the constant voltage control unit 180 arranged in the space 110h. By using the RF filter 200, high-frequency conductive noise (common mode noise) can be reduced, and the withstand voltage margin of the power storage unit 160 can be ensured. In addition, by using the RF filter 200, the loss of high-frequency electric power can be suppressed, and a high processing rate (such as etching rate) can be obtained.

[0172] In addition, in each of the plasma processing apparatuses 100Gb and 100Gc, when the insulation distance is ensured between each of the rectifying and smoothing unit 150 and the power storage unit 160 and the ground frame 110 , the RF filter 200 may not be provided.

[0173] [Exemplary Embodiment of Configuration of Rectification and Smoothing Unit]

[0174] Reference Fig.30 and Fig.31 . Fig.30 FIG. 1 is a diagram showing a configuration of a rectifying and smoothing unit according to an exemplary embodiment. Fig.31 FIG. 2 is a diagram showing the configuration of a rectifying and smoothing unit according to another exemplary embodiment. Fig.30and Fig.31 As shown, the rectifying and smoothing unit 150 may be disposed in the space 110h. The feeding coil unit 130 and the receiving coil unit 140 may be disposed in the metal housing 115 in the space 110a. The metal housing 115 is grounded together with the ground frame 110. Fig.31 As shown, the RF filter 200 may be connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150, or may be arranged in the metal housing 115. In this case, Fig.31 As shown, the terminal capacitor 202a of the RF filter 200 (see Fig.13 ) is connected to the metal housing 115 as the ground via the wiring 203a. The terminal capacitor 202b (see Fig.13 ) is connected to the metal casing 115 serving as the ground via wiring 203b.

[0175] exist Fig.30 and Fig.31 In the embodiments shown in each example, an insulation distance can be ensured between the rectifying and smoothing unit 150 and the ground frame 110. In addition, an insulation distance can be ensured between each power supply line connecting the rectifying and smoothing unit 150 and the power receiving coil unit 140 to each other and the ground frame 110 and the metal shell 115. In addition, an insulation distance can be ensured between the RF filter 200 and the ground frame 110 and the metal shell 115. In addition, an insulation distance can be ensured between the power receiving coil unit 140 and the ground frame 110 and the metal shell 115. In addition, an insulation distance can be ensured between the power feeding coil unit 130 and the ground frame 110 and the metal shell 115.

[0176] Reference Figure 32 to Figure 39 . Fig.32 and Fig.33 Each of the drawings is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Figure 34 to Figure 39 Each of them is a diagram showing the configuration of a rectifying and smoothing unit according to another exemplary embodiment. Fig.32 and Fig.33 The plasma processing apparatuses 100Ha and 100Hb shown in each example are respectively arranged relative to the plasma processing apparatus 100E (see Figure 7 ) from different perspectives.

[0177] like Fig.32 and Fig.33 As shown, in each of the plasma processing apparatuses 100Ha and 100Hb, the rectifying and smoothing unit 150 is disposed in the space 110a. This can improve the degree of freedom in the layout of other components in the space 110h.

[0178] like Fig.32 , Fig.34 and Fig.35 As shown, in the plasma processing device 100Ha, the rectifying and smoothing unit 150 is connected to the power storage unit 160 provided in the space 110h without passing through the RF filter 200. In addition, in the plasma processing device 100Ha, the rectifying and smoothing unit 150 is connected to the power receiving coil unit 140 without passing through the RF filter 200. The feeding coil unit 130, the power receiving coil unit 140 and the rectifying and smoothing unit 150 can be arranged in the space 110a in a metal shell 115 that is grounded together with the ground frame 110. In addition, the feeding coil unit 130 and the power receiving coil unit 140 can be both arranged in a single metal shell. It can be as shown in FIG. Fig.34 As shown in FIG. 1 , the rectifying and smoothing unit 150 is separated from the power receiving coil unit 140. Alternatively, the rectifying and smoothing unit 150 may be separated from the power receiving coil unit 140. Fig.35 As shown, the rectifying and smoothing unit 150 is formed integrally with the power receiving coil unit 140. That is, the rectifying and smoothing unit 150 and the power receiving coil unit 140 may be both disposed in a single metal casing or may be both provided on a single circuit board.

[0179] like Fig.34 and Fig.35 As shown, in the plasma processing device 100Ha, the feeding coil unit 130, the receiving coil unit 140, the rectifying and smoothing unit 150, the power storage unit 160, the pair of power supply lines connecting the receiving coil unit 140 and the rectifying and smoothing unit 150, and the pair of power supply lines connecting the rectifying and smoothing unit 150 and the power storage unit 160 can each have an insulation distance relative to the ground frame 110 and the metal shell 115. As a result, common mode noise can be reduced. In addition, high impedance can be obtained for high-frequency electric power in the rectifying and smoothing unit 150 and / or the receiving coil unit 140. Therefore, the loss of high-frequency electric power can be suppressed, so that a high processing rate (for example, etching rate) can be obtained.

[0180] like Fig.33 , Fig.36 and Fig.37 As shown, in the plasma processing device 100Hb, the rectifying and smoothing unit 150 is connected to the power storage unit 160 provided in the space 110h without passing through the RF filter 200. In addition, in the plasma processing device 100Hb, the rectifying and smoothing unit 150 is connected to the power receiving coil unit 140 via the RF filter 200. The power feeding coil unit 130, the power receiving coil unit 140, the RF filter 200, and the rectifying and smoothing unit 150 can be arranged in the space 110a in a metal housing 115 that is grounded together with the ground frame 110. In this case, as shown in FIG. Fig.36 and Fig.37 As shown, the terminal capacitor 202a of the RF filter 200 (see Fig.13 ) is connected to the metal housing 115 as the ground via the wiring 203a. The terminal capacitor 202b (see Fig.13) is connected to the metal housing 115 as the ground via the wiring 203b. In addition, the feeding coil unit 130 and the receiving coil unit 140 may be both arranged in a single metal housing. Fig.36 As shown in FIG. 1 , the rectifying and smoothing unit 150 is separated from the power receiving coil unit 140 and the RF filter 200. Alternatively, Fig.37 As shown, the rectifying and smoothing unit 150 is integrated with the RF filter 200 and the power receiving coil unit 140. That is, the rectifying and smoothing unit 150, the RF filter 200 and the power receiving coil unit 140 may be disposed in a single metal casing or on a single circuit board.

[0181] like Fig.36 and Fig.37 As shown, in the plasma processing device 100Hb, the feeding coil unit 130, the receiving coil unit 140, the RF filter 200, the rectifying and smoothing unit 150, the power storage unit 160, a pair of power supply lines connecting the receiving coil unit 140 and the RF filter 200, a pair of power supply lines connecting the RF filter 200 and the rectifying and smoothing unit 150, and a pair of power supply lines connecting the rectifying and smoothing unit 150 and the power storage unit 160 can each have an insulation distance relative to the ground frame 110 and the metal shell 115. Thus, common mode noise can be reduced. In addition, high impedance can be obtained for high-frequency electric power by the RF filter 200. Therefore, the loss of high-frequency electric power can be suppressed, so that a high processing rate (such as etching rate) can be obtained.

[0182] like Fig.38 and Fig.39 As shown, the RF filter 200 may be connected between the rectifying and smoothing unit 150 and the power storage unit 160 provided in the space 110h. The feeding coil unit 130, the receiving coil unit 140, the rectifying and smoothing unit 150, and the RF filter 200 may be arranged in the space 110a in a metal housing 115 that is grounded together with the ground frame 110. In this case, as shown in FIG. Fig.38 and Fig.39 As shown, the terminal capacitor 202a of the RF filter 200 (see Fig.13 ) is connected to the metal housing 115 as the ground via the wiring 203a. The terminal capacitor 202b (see Fig.13 ) is connected to the metal housing 115 as the ground via the wiring 203b. In addition, the feeding coil unit 130 and the receiving coil unit 140 may be arranged in a single metal housing. Fig.38 As shown in FIG. 1 , the rectifying and smoothing unit 150 is separated from the power receiving coil unit 140 and the RF filter 200. Alternatively, Fig.39As shown, the rectifying and smoothing unit 150 is integrated with the RF filter 200 and the power receiving coil unit 140. That is, the rectifying and smoothing unit 150, the RF filter 200 and the power receiving coil unit 140 may be disposed in a single metal casing or on a single circuit board.

[0183] exist Fig.38 and Fig.39 In the embodiments shown in each, the feeding coil unit 130, the receiving coil unit 140, the rectifying and smoothing unit 150, the RF filter 200, the power storage unit 160, a pair of power supply lines connecting the receiving coil unit 140 and the rectifying and smoothing unit 150, a pair of power supply lines connecting the rectifying and smoothing unit 150 and the RF filter 200, and a pair of power supply lines connecting the RF filter 200 and the power storage unit 160 can each have an insulation distance relative to the ground frame 110 and the metal shell 115. Thus, common mode noise can be reduced. In addition, high impedance can be obtained for high-frequency electric power by the RF filter 200. Therefore, the loss of high-frequency electric power can be suppressed, so that a high processing rate (such as etching rate) can be obtained.

[0184] [High-efficiency transmission of large electric power]

[0185] In the plasma processing apparatus of various exemplary embodiments, in order to efficiently transmit large electric power, the transmission voltage of the electric power can be set to a high voltage level. Therefore, the withstand voltage of each part of the plasma processing apparatus can be increased. For example, as described above, the power storage unit 160 can include a plurality of capacitors connected in series between the positive line 160p and the negative line 160m constituting a pair of power supply lines.

[0186] In addition, the positive line and the negative line constituting the pair of power supply lines may have the same length and have an insulation distance therebetween, thereby improving the withstand voltage against conductive noise.

[0187] In addition, the power feeding coil 131 and the power receiving coil 141 can each improve its withstand voltage by selecting the wire spacing between the windings constituting them and the material and thickness of the covering or coating of the windings. In addition, the capacitors and resonant capacitors of the low-pass filter such as the above-mentioned terminal capacitors are selected to have a withstand voltage higher than the transmission voltage. In addition, in order to improve the withstand voltage, the ferrite components of the power feeding coil unit 130 and the power receiving coil unit 140 are arranged to have an insulation distance relative to the ground. In addition, in order to improve the withstand voltage, the heat conduction sheets of the power feeding coil unit 130 and the power receiving coil unit 140 are selected to have an insulation withstand voltage higher than the transmission voltage.

[0188] [For countermeasures against conductive noise in power storage units]

[0189] Reference Figure 40 to Figure 43 . Figure 40 to Figure 43 Each of the figures shows an exemplary embodiment for reducing the line potential difference caused by conductive noise. Conductive noise may be generated by the difference in impedance between the positive line and the negative line. In order to reduce the line potential difference between the positive line and the negative line caused by such conductive noise, one or more capacitors may be connected between the positive line and the negative line constituting the power supply line between the power storage unit 160 and the power consumption component 240. Each capacitor may be a non-polar capacitor. The non-polar capacitor may be selected from a thin film capacitor, a ceramic capacitor, a stacked ceramic capacitor, etc. according to the frequency of the high-frequency electric power used in the plasma processing device. In this way, the line potential difference generated between the positive line and the negative line due to conductive noise can be reduced.

[0190] For example, one or more capacitors may be connected between the positive line and the negative line connecting the power storage unit 160 and the one or more voltage control converters 170. Alternatively or in addition, one or more capacitors may be connected between the positive line and the negative line connecting the one or more voltage control converters 170 and the corresponding constant voltage control unit 180.

[0191] exist Fig.40 In the embodiment shown, a capacitor 511 is connected between a positive line 160p and a negative line 160m connecting the power storage unit 160 and the voltage control converter 170. In addition, a capacitor 521 is connected between a positive line 178p and a negative line 178m connecting the voltage control converter 170 and the constant voltage control unit 180. The positive line 178p connects the positive output (V OUT+ ) and the positive input (V IN+ ) are connected to each other. Negative line 178m connects the negative output (V OUT- ) and the negative input (V IN- ) are connected to each other. The capacitor 511 and the capacitor 521 may each be a non-polar capacitor.

[0192] exist Fig.41In the embodiment shown, a capacitor 511 and a capacitor 512 are connected in parallel between a positive line 160p and a negative line 160m connecting the power storage unit 160 and the voltage control converter 170. The capacitor 511 and the capacitor 512 may have the same electrostatic capacitance as each other, or may have different electrostatic capacitances. In addition, a capacitor 521 and a capacitor 522 are connected in parallel between a positive line 178p and a negative line 178m connecting the voltage control converter 170 and the constant voltage control unit 180. The capacitor 521 and the capacitor 522 may have the same electrostatic capacitance as each other, or may have different electrostatic capacitances. The capacitor 511, the capacitor 512, the capacitor 521, and the capacitor 522 may each be a non-polar capacitor. In addition, in the case where two or more capacitors having different electrostatic capacitances are connected in parallel between the positive line and the negative line, the two or more capacitors may be arranged in such a manner that a capacitor having a characteristic of reducing the potential difference between the lines caused by the conductive noise of a higher frequency is connected at a position shorter in electrical length from the electric power consumption component 240. That is, a high frequency capacitor (a capacitor with relatively small electrostatic capacitance) can be arranged at a position closer to the power consumption component 240. Fig.41 In the illustrated embodiment, when capacitor 511 and capacitor 512 have different electrostatic capacitances and capacitor 521 and capacitor 522 have different electrostatic capacitances, capacitor 512 and capacitor 522 are capacitors for high frequencies, and capacitor 511 and capacitor 521 are capacitors for low frequencies.

[0193] exist Fig.42 In the embodiment shown, two voltage control converters 170 are connected in parallel between the power storage unit 160 and the constant voltage control unit 180. The positive line 160p connected to the power storage unit 160 is branched into positive lines 160pa and 160pb. The positive line 160pa is connected to the positive input (V IN+ ) is connected. The positive line 160pb is connected to the positive input (V IN+ ) is connected. Negative line 160m connected to power storage unit 160 is branched into negative lines 160ma and 160mb. Negative line 160ma is connected to the negative input (V IN- ) is connected. The negative line 160mb is connected to the negative input (V IN- ) connection. In addition, three or more voltage control converters 170 may be connected in parallel. In this case, the maximum output electric powers of the three or more voltage control converters 170 may be the same as or different from each other.

[0194] In addition, Fig.42In the embodiment shown, the positive input (V IN+ ) is branched into a positive line 178pa and a positive line 178pb. The positive line 178pa is connected to the positive output (V OUT+ ) is connected. The positive line 178pb is connected to the positive output (V OUT+ ) is connected. In addition, the negative input (V IN- ) is branched into a negative line 178ma and a negative line 178mb. The negative line 178ma is connected to the negative output (V OUT- ) is connected. Negative line 178mb is connected to the negative output (V OUT- ) is connected. In addition, the positive input (V IN+ ) and the positive line 178p connected to the negative input (V IN- ) Each of the negative lines 178m connected may be branched into three or more lines.

[0195] exist Fig.42 In the illustrated embodiment, a capacitor 511 is connected between the positive line 160pa and the negative line 160ma. In addition, a capacitor 512 is connected between the positive line 160pb and the negative line 160mb. In addition, a capacitor 521 is connected between the positive line 178p and the negative line 178m. The capacitor 511, the capacitor 512, and the capacitor 521 can each be a non-polar capacitor. In addition, the capacitor 511, the capacitor 512, and the capacitor 521 can each have the same electrostatic capacitance as each other, or can have different electrostatic capacitances.

[0196] exist Fig.43 In the illustrated embodiment, two power supply systems are connected to the power storage unit 160. Each of the two power supply systems includes a voltage control converter 170 and a constant voltage control unit 180. The two power supply systems are connected to two electric power consumption components 240, respectively. That is, two voltage control converters 170 are connected to the power storage unit 160, two constant voltage control units 180 are connected to two voltage control converters 170, and two constant voltage control units 180 are connected to two electric power consumption components 240, respectively. In addition, three or more power supply systems may be connected to the power storage unit 160.

[0197] exist Fig.43 In the embodiment shown, the positive line 160p connected to the power storage unit 160 is branched into positive lines 160pa and 160pb. The positive line 160pa is connected to the positive input (V IN+) is connected. The positive line 160pb is connected to the positive input (V IN+ ) is connected. Negative line 160m connected to power storage unit 160 is branched into negative lines 160ma and 160mb. Negative line 160ma is connected to the negative input (V IN- ) is connected. The negative line 160mb is connected to the negative input (V IN- )connect.

[0198] In addition, Fig.43 In the embodiment shown, positive line 178pc carries the positive output (V OUT+ ) and the positive input (V IN+ ) are connected to each other. In addition, negative line 178mc connects the negative output (V OUT- ) and the negative input (V IN+ ) are connected to each other. In addition, the positive line 178pd connects the positive output (V OUT+ ) and the positive input (V IN+ ) are connected to each other. In addition, negative line 178md connects the negative output (V OUT- ) and the negative input (V IN+ ) are connected to each other.

[0199] exist Fig.43 In the illustrated embodiment, a capacitor 511 is connected between the positive line 160pa and the negative line 160ma. In addition, a capacitor 512 is connected between the positive line 160pb and the negative line 160mb. In addition, a capacitor 521 is connected between the positive line 178pc and the negative line 178mc. In addition, a capacitor 522 is connected between the positive line 178pd and the negative line 178md. The capacitor 511, the capacitor 512, the capacitor 521, and the capacitor 522 can each be a non-polar capacitor. In addition, the capacitor 511, the capacitor 512, the capacitor 521, and the capacitor 522 can each have the same electrostatic capacitance as each other, or can have different electrostatic capacitances.

[0200] [Countermeasures against load fluctuations in the rectifier and smoothing section]

[0201] Reference Fig.14 and Figures 44 to 46 . Figures 44 to 461 is a diagram showing a rectifier-smoothing unit of another exemplary embodiment. The voltage rectified by the rectifier circuit 153 of the rectifier-smoothing unit 150 (the output voltage of the rectifier circuit 153) has an amplitude that varies at a frequency twice the transmission frequency. The smoothing circuit 154 can be configured to reduce the variation (amplitude) of its output voltage even when a load variation such as the above occurs. Thus, the rectifier-smoothing unit 150 can supply power even when a load variation occurs, and can ensure a withstand voltage margin of the power storage unit 160.

[0202] Specifically, the smoothing circuit 154 is configured such that the ratio of the amplitude of the output voltage of the smoothing circuit 154 to the amplitude of the output voltage of the rectifying circuit 153 (amplitude ratio) is 3% or less. In addition, the smoothing circuit 154 is configured such that the cutoff frequency / (2×transmission frequency) is less than 1 / 10.

[0203] exist Fig.14 and Figures 44 to 46 In each of the embodiments shown, the capacitance of at least one smoothing capacitor is set so that the smoothing circuit 154 has the above-mentioned characteristics. Fig.14 , Fig.45 and Fig.46 In each of the embodiments shown, the capacitance of the capacitor 1542b is set so that the smoothing circuit 154 has the above-mentioned characteristics. Fig.44 In the embodiment shown in FIG. 1 , the inductor 1541a and the positive output (V OUT+ ) between the positive line and the negative line, capacitor 1542b and capacitor 1542c are connected in parallel. The combined capacitance of capacitor 1542b and capacitor 1542c is set so that the smoothing circuit 154 has the above-mentioned characteristics.

[0204] exist Fig.45 In the rectifying and smoothing unit 150 shown in the figure, an inductor 1541 b is connected between the other end of the capacitor 1542 a and the other end of the capacitor 1542 b . Fig.45 The rectifying and smoothing unit 150 shown may not include the capacitor 1542 a . Fig.45 The rectifying and smoothing unit 150 shown may not include the capacitor 1542 a and the inductor 1541 b . Fig.45 The rectifying and smoothing unit 150 shown may not include the inductor 1541 a and the inductor 1541 b .

[0205] exist Fig.46 In the rectifying and smoothing unit 150 shown, an inductor 1541a and an inductor 1541c are connected in series between one end of a capacitor 1542a and one end of a capacitor 1542b, and an inductor 1541v and an inductor 1541d are connected in series between the other end of the capacitor 1542a and the other end of the capacitor 1542b. Fig.46The rectifying and smoothing unit 150 shown may not include the inductor 1541 b and the inductor 1541 d .

[0206] [Synchronous control of constant voltage control unit]

[0207] Reference Fig.47 . Fig.47 FIG. 1 is a diagram showing a rectifying and smoothing unit and a constant voltage control unit according to another exemplary embodiment. Fig.47 In the illustrated embodiment, the constant voltage control unit 180 can control the application of voltage to the power consumption component 240 and the stop of the voltage application in synchronization with the transmission AC power transmitted between the power feeding coil unit 130 and the power receiving coil unit 140. In this embodiment, the rectifying and smoothing unit 150 may include a synchronization pulse generating unit 156. In addition, the rectifying and smoothing unit 150 may further include a level adjusting unit 157.

[0208] Fig.48 FIG. 1 is a timing diagram showing an example of the output voltage in the power receiving coil unit and the signals output from each part of the rectifying and smoothing unit. Fig.48 As shown, the output electric power of the power receiving coil unit 140 has a transmission frequency. The rectifier circuit 153 outputs a voltage having a frequency twice the transmission frequency by full-wave rectification of the output electric power of the power receiving coil unit 140. The synchronization pulse generating unit 156 generates a pulse signal from the output voltage of the rectifier circuit 153. Specifically, the synchronization pulse generating unit 156 generates a pulse signal that rises when the output voltage of the rectifier circuit 153 has a first reference voltage level in the rise of its voltage level, and falls when the output voltage of the rectifier circuit 153 has a second reference voltage level in the fall of its voltage level. The synchronization pulse generating unit 156 generates a synchronization pulse signal that alternately changes to an ON state and an OFF state at the rising edge of the pulse signal. The signal level of the synchronization pulse signal can be adjusted in the level adjusting unit 157.

[0209] Fig.47 The constant voltage control unit 180 shown can adjust the timing of applying the voltage to the power consumption component 420 and stopping the voltage application and the timing of stopping the voltage application to the power consumption component 420 based on the synchronization pulse signal (or the synchronization pulse signal after the level adjustment).

[0210] Fig.49 and Fig.50 They are respectively Fig.47 An example of a timing diagram related to the constant voltage control unit is shown in FIG. Fig.49 and Fig.50 The operation clock is the operation clock OC of the control unit 182 of the constant voltage control unit 180 (refer to Fig.47 ).exist Fig.49 and Fig.50Each of the control signals is a signal for applying and stopping the voltage to the corresponding power consumption component 240. When the control signal is in the ON state, the voltage is applied from the constant voltage control unit 180 to the corresponding power consumption component 240, and when the control signal is in the OFF state, the application of the voltage from the constant voltage control unit 180 to the corresponding power consumption component 240 is stopped.

[0211] exist Fig.49 In the embodiment shown, the control unit 182 generates a plurality of control signals that alternately change to the ON state and the OFF state with a period of the synchronization pulse signal (or the synchronization pulse signal after level adjustment), that is, a period of twice the transmitted AC power. The control unit 182 sets the delay amount of each control signal in a manner that has an integral multiple of the period of the action clock relative to the synchronization pulse signal (or the synchronization pulse signal after level adjustment). Thus, the moment of applying the voltage from the constant voltage control unit 180 to the power consumption component 240 can be arbitrarily controlled. Therefore, the moment of applying the voltage to a specific power consumption component 240 can be synchronized, or the moment of applying the voltage to a specific power consumption component 240 can be adjusted individually, and the control of the power consumption component 240 can be made more efficient and / or more performant. In addition, the constant voltage control unit 180 can communicate with the control unit 2 of the plasma processing system. In this case, the constant voltage control unit 180 can select synchronous or asynchronous control of the power consumption component 240 with other units that can communicate with the control unit 2, and can optimize the plasma processing and / or avoid the concentration of the use of electric power. The other units are, for example, the first RF generation part 31 a , the second RF generation part 32 a , the gas supply part 20 , and / or the exhaust system 40 .

[0212] exist Fig.50In the embodiment shown, the control unit 182 generates a plurality of control signals that alternately change to the ON state and the OFF state with the cycle of the synchronization pulse signal (or the synchronization pulse signal after level adjustment), that is, the cycle of transmitting AC power. The control unit 182 sets the delay amount of each control signal in a manner that has an integral multiple of the cycle of the action clock relative to the synchronization pulse signal (or the synchronization pulse signal after level adjustment). Thus, the moment of applying voltage from the constant voltage control unit 180 to the power consumption component 240 can be arbitrarily controlled. Therefore, the moment of applying voltage to a specific power consumption component 240 can be synchronized, or the moment of applying voltage to a specific power consumption component 240 can be adjusted individually, so that the control of the power consumption component 240 can be made more efficient and / or more performant. In addition, the constant voltage control unit 180 can communicate with the control unit 2 of the plasma processing system. In this case, the constant voltage control unit 180 can select synchronous or asynchronous control of the power consumption component 240 with other units that can communicate with the control unit 2, so that the plasma processing can be optimized and / or the concentration of the power can be avoided. The other units are, for example, the first RF generation part 31 a , the second RF generation part 32 a , the gas supply part 20 , and / or the exhaust system 40 .

[0213] [Electricity storage unit having a non-polar capacitor]

[0214] Reference Fig.51 and Fig.52 . Fig.51 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.52 FIG. 1 is a diagram showing a power storage unit in a plasma processing apparatus according to another exemplary embodiment. Fig.51 The plasma processing apparatus 100Ja shown in FIG. 1 is a plasma processing apparatus 100C (see FIG. Figure 5 ) from different perspectives.

[0215] The plasma processing apparatus 100Ja includes a power storage unit 160J instead of the power storage unit 160. Fig.52 As shown, the storage unit 160J includes a plurality of non-polar capacitors 161J. The plurality of non-polar capacitors 161J are connected in parallel between the positive line 160p and the negative line 160m. Each of the plurality of non-polar capacitors 161J can be selected from a film capacitor, a ceramic capacitor, a stacked ceramic capacitor, etc. The storage unit 160J has a high withstand voltage. In addition, the plurality of non-polar capacitors 161J may have the same electrostatic capacitance as each other, or may have different electrostatic capacitances.

[0216] The plasma processing apparatus 100Ja includes, in addition to the power consumption component 240, one or more input / output devices 241 and one or more sensors 242 as other power consumption components. The one or more input / output devices 241 include one or more of an actuator (stepping motor or servo motor), a light emitting device, a control circuit, a power generation unit for each input / output device 241, a power supply for an electrostatic chuck, a switch, and a thermistor used in the plasma processing apparatus 100Ja. The one or more sensors 242 include one or more of various sensors and cameras for detecting the state in the chamber 10. A DC voltage can be applied to each of the one or more input / output devices 241 and the one or more sensors 242 from any one of the power storage unit 160J, the voltage control converter 170, and the constant voltage control unit 180.

[0217] Reference Fig.53 . Fig.53 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Fig.53 The plasma processing apparatus 100Jb shown will be described from the viewpoint of differences from the plasma processing apparatus 100Ja.

[0218] The plasma processing apparatus 100Jb includes the above-mentioned power storage unit 160 in addition to the power storage unit 160J. For the power consumption component 240 such as a heater that requires relatively large power, a voltage can be applied from the constant voltage control unit 180 using the power stored in the power storage unit 160. On the other hand, for the power consumption component such as one or more input / output devices 241 and one or more sensors 242 that require relatively small power, a DC voltage can be applied from any one of the power storage unit 160J, the voltage control converter 170, and the constant voltage control unit 180 using the power stored in the power storage unit 160J.

[0219] Reference Fig.54 . Fig.54 FIG. 2 is a diagram showing a power storage unit in a plasma processing apparatus according to another exemplary embodiment. Fig.54 As shown, the positive output (V OUT+ ) is branched into a positive line 160pa and a positive line 160pb. The positive line 160pa is a part of the positive line connected between the rectifying and smoothing unit 150 and the constant voltage control unit 180. The positive line 160pb is a part of the positive line connected between the rectifying and smoothing unit 150 and the sensor 242. OUT-) is branched into a negative line 160ma and a negative line 160mb. The negative line 160ma is a part of the negative line connected between the rectifying and smoothing unit 150 and the constant voltage control unit 180. The negative line 160mb is a part of the negative line connected between the rectifying and smoothing unit 150 and the sensor 242.

[0220] The power storage unit 160 includes at least one capacitor 161 as a polar capacitor. As described above with respect to the plasma processing apparatus 100Jb, the power consumption component 240 such as a heater requiring relatively large power can be applied with a voltage from the constant voltage control unit 180 using the power stored in the power storage unit 160.

[0221] Positive line 160pb includes switch 162p and switch 163p. Negative line 160mb includes switch 162m and switch 163m. Power storage unit 160J is connected to positive line 160pb between switch 162p and switch 163p. Also, power storage unit 160J is connected to negative line 160mb between switch 162m and switch 163m.

[0222] The switch 162p and the switch 162m are closed during the period before the charging of the power storage unit 160J is completed. The opening and closing of the switch 162p and the switch 162m are controlled by the control unit 152 of the rectifying and smoothing unit 150. The switch 163p and the switch 163m are opened when the plasma processing device is in a normal operating state. That is, when the plasma processing device is in a normal operating state, the voltage applied to the one or more sensors 242 from the power storage unit 160J is stopped. On the other hand, when an abnormality of the plasma processing device is detected, the switch 163p and the switch 163m are closed according to a signal from a control mechanism such as an interlock mechanism. Thus, when an abnormality of the plasma processing device is detected, a voltage is applied to the one or more sensors 242, and data in the chamber 10 of the plasma processing device is acquired and recorded. In this way, the power storage unit 160J can be used as a low-power power storage unit for data acquisition and data recording of one or more sensors 242 arranged at a position exposed to high-frequency energy.

[0223] [Plasma processing apparatus including multiple voltage control converters]

[0224] Reference Fig.55 and Fig.56 . Fig.55 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.56 FIG. 1 is a diagram showing the connection of a plurality of voltage control converters in a plasma processing apparatus according to another exemplary embodiment. Fig.55 The plasma processing apparatus 100Ka shown in FIG. Figure 7 ) from different perspectives.

[0225] The plasma processing apparatus 100Ka includes a plurality of voltage control converters 170Ka and Kb. Each of the plurality of voltage control converters 170Ka and Kb has the same structure as the voltage control converter 170. The plurality of voltage control converters 170Ka and Kb are connected in parallel between the power storage unit 160 and the constant voltage control unit 180.

[0226] like Fig.56 As shown, the positive line 160p is connected to the positive inputs (V IN+ The negative line 160m is connected to the negative input (V IN- ) are connected. The positive outputs (V OUT+ ) and the positive input (V IN+ ) are connected. The negative outputs (V OUT- ) and the negative input (V IN- )connect.

[0227] According to the plasma processing device 100Ka, a large output current capacity and a large maximum output power can be obtained by connecting a plurality of voltage control converters 170Ka and Kb in parallel. The maximum output power of each of the plurality of voltage control converters 170Ka and 170Kb can be the same or different.

[0228] Reference Figure 57 to Figure 59 . Fig.57 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.58 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.59 FIG. 1 is a diagram showing the connection of a plurality of voltage control converters in a plasma processing apparatus according to another exemplary embodiment. Fig.57 The plasma processing device 100Kb and Fig.58 The plasma processing apparatus 100Kc shown will be described from the viewpoint of differences from the plasma processing apparatus 100Ka.

[0229] In each of the plasma processing devices 100Kb and Kc, a plurality of power supply systems are connected to the power storage unit 160. Specifically, each of the plasma processing devices 100Kb and Kc includes a plurality of constant voltage control units 180Ka and 180Kb. One of the plurality of power supply systems includes a voltage control converter 170Ka and a constant voltage control unit 180Ka. Another of the plurality of power supply systems includes a voltage control converter 170Kb and a constant voltage control unit 180Kb.

[0230] like Fig.59 As shown, the positive line 160p is connected to the positive inputs (V IN+ The negative line 160m is connected to the negative input (V IN- ) connection. The positive output (V OUT+ ) and the positive input (V IN+ ) is connected to the negative output (V OUT- ) and the negative input (V IN- ) connection. The positive output (V OUT+ ) and the positive input (V IN+ ) is connected to the negative output (V OUT- ) and the negative input (V IN- )connect.

[0231] like Fig.57 As shown, in the plasma processing apparatus 100Kb, a plurality of constant voltage control units 180Ka and 180Kb are connected to one or more power consumption components 240 such as one or more heaters provided in the substrate support unit 11. Fig.58 As shown, in the plasma processing apparatus 100Kc, the constant voltage control unit 180Ka is connected to one or more power consumption components 240 such as one or more heaters provided in the substrate support unit 11. In addition, in the plasma processing apparatus 100Kc, the constant voltage control unit 180Kb is connected to at least one input / output device 241 and / or at least one sensor 242.

[0232] According to the plasma processing apparatus 100Kb, Kc, a larger maximum output power can be obtained by using a plurality of power supply systems. In addition, according to the plasma processing apparatus 100Kb, Kc, voltage application to individual power consumption components can be controlled for each power supply system.

[0233] [Plasma processing device including a plurality of power feeding coils and a plurality of power receiving coils]

[0234] Reference Fig.60 . Fig.60 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Fig.60 The plasma processing apparatus 100La shown in FIG. Figure 7 ) from different perspectives.

[0235] The plasma processing apparatus 100La further includes a power feeding unit 120L having a communication unit 121L, a power feeding coil unit 130L, a power receiving coil unit 140L, an RF filter 200L, a rectifying and smoothing unit 150L having a communication unit 151L, a power storage unit 160L, a voltage control converter 170L, and a constant voltage control unit 180L. The power feeding section 120L, the communication section 121L, the power feeding coil section 130L, the power receiving coil section 140L, the RF filter 200L, the rectification and smoothing section 150L, ​​the communication section 151L, the power storage section 160L, the voltage control converter 170L, and the constant voltage control section 180L are configured similarly to the power feeding section 120, the communication section 121, the power feeding coil section 130, the power receiving coil section 140, the RF filter 200, the rectification and smoothing section 150, the communication section 151, the power storage section 160, the voltage control converter 170, and the constant voltage control section 180, respectively.

[0236] The power feeding section 120, the power feeding coil section 130, the power receiving coil section 140, the RF filter 200, the rectifying and smoothing section 150, the power storage section 160, the voltage control converter 170, and the constant voltage control section 180 constitute a first power supply system. The power feeding section 120L, the power feeding coil section 130L, the power receiving coil section 140L, the RF filter 200L, the rectifying and smoothing section 150L, ​​the power storage section 160L, the voltage control converter 170L, and the constant voltage control section 180L constitute a second power supply system.

[0237] In the second power supply system, the power feeding section 120L generates the transmission AC power from the AC power supply 400L. The power feeding section 120L is connected to the power feeding coil section 130L, and the power feeding coil section 130L is electromagnetically coupled with the power receiving coil section 140L. The power receiving coil section 140L is connected to the rectification and smoothing section 150L via the RF filter 200L. The power storage section 160L is connected between the rectification and smoothing section 150L and the voltage control converter 170L. The constant voltage control section 180L is connected to at least one input-output device 241 and / or at least one sensor 242.

[0238] The plasma processing device 100La has a plurality of power supply systems each including a feeding coil unit and a receiving coil unit. Therefore, the plasma processing device 100La can use small-sized coils as each feeding coil and each receiving coil, which can increase the degree of freedom of their layout. In addition, high power can be supplied by wireless power supply. Each of the plurality of power supply systems can supply the same power or different power.

[0239] Reference Fig.61 and Fig.62 . Fig.61 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.62 1 is a diagram showing a rectifying and smoothing unit of another exemplary embodiment. Fig.61 The plasma processing apparatus 100Lb shown will be described from the viewpoint of differences from the plasma processing apparatus 100La.

[0240] The plasma processing device 100Lb includes a first power supply system and a second power supply system in the same manner as the plasma processing device 100La. However, in the plasma processing device 100Lb, a single rectifying and smoothing unit 150 is connected between the RF filter 200 and the power storage unit 160, and between the RF filter 200L and the power storage unit 160L. That is, the first power supply system and the second power supply system share the rectifying and smoothing unit 150. In addition, in the plasma processing device 100Lb, a single feeding unit 120 is connected to the feeding coil unit 130 and the feeding coil unit 130L. That is, the first power supply system and the second power supply system share the feeding unit 120.

[0241] like Fig.62 As shown, in the plasma processing apparatus 100Lb, the rectifying and smoothing unit 150 further includes a rectifying circuit 153L and a smoothing circuit 154L. The rectifying circuit 153L and the smoothing circuit 154L are respectively configured similarly to the rectifying circuit 153 and the smoothing circuit 154. The rectifying circuit 153 is connected to the smoothing circuit 154, and the smoothing circuit 154 is connected to the power storage unit 160. In addition, the rectifying circuit 153L is connected to the smoothing circuit 154L, and the smoothing circuit 154L is connected to the power storage unit 160L.

[0242] In the plasma processing apparatus 100Lb, the rectifying and smoothing unit 150 can send an instruction signal to the power feeding unit 120 so as to separately control the power supply by the power supply system including the power feeding coil unit 130 and the power supply by the power supply system including the power feeding coil unit 130L.

[0243] Reference Fig.63 and Fig.64 . Fig.63FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.64 1 is a diagram showing a rectifying and smoothing unit of another exemplary embodiment. Fig.63 The plasma processing apparatus 100Lc shown will be described from the viewpoint of differences from the plasma processing apparatus 100Lb.

[0244] The plasma processing apparatus 100Lc includes a first power supply system and a second power supply system similarly to the plasma processing apparatus 100Lb. However, in the plasma processing apparatus 100Lc, the first power supply system and the second power supply system share a rectifying and smoothing unit 150, a power storage unit 160, a voltage control converter 170, and a constant voltage control unit 180. Specifically, the rectifying and smoothing unit 150 is connected between the RF filter 200 and the power storage unit 160, and between the RF filter 200L and the power storage unit 160L.

[0245] like Fig.64 As shown, in the plasma processing apparatus 100Lc, the rectifying and smoothing unit 150 includes a rectifying circuit 153L in addition to the rectifying circuit 153 and the smoothing circuit 154. The rectifying circuit 153 is connected between the power receiving coil unit 140 and the smoothing circuit 154, and the rectifying circuit 153L is connected between the power receiving coil unit 140L and the smoothing circuit 154. In addition, the rectifying circuit 153L may be connected to the power storage unit 160 via another smoothing circuit 154L.

[0246] In the plasma processing apparatus 100Lc, the rectifying and smoothing unit 150 can send an instruction signal to the power feeding unit 120 so as to control the power supply by the power supply system including the power feeding coil unit 130 and the power supply by the power feeding coil unit 130L separately.

[0247] Reference Fig.65 . Fig.65 FIG. 1 is a diagram showing a power feeding coil unit and a power receiving coil unit in a plasma processing apparatus according to another exemplary embodiment. Fig.65 In the illustrated embodiment, the feeding coil unit 130 includes a plurality of feeding coils 131. The plurality of feeding coils 131 are connected in series between a resonant capacitor 132a and a resonant capacitor 132b. In addition, the receiving coil unit 140 includes a plurality of receiving coils 141. The plurality of receiving coils 141 are electromagnetically inductively coupled to the corresponding feeding coils 131. The plurality of receiving coils 141 are connected in series between a resonant capacitor 142a and a resonant capacitor 142b.

[0248] When the power feeding coil unit 130 and the power receiving coil unit 140 each include a plurality of coils connected in series, each of the plurality of coils can be a coil having a small inductance and a small size. Therefore, the degree of freedom in the layout of the plurality of coils becomes high. In addition, a large amount of electric power can be supplied.

[0249] Reference Fig.66 . Fig.66 FIG. 1 is a diagram showing a power feeding coil unit and a power receiving coil unit in a plasma processing apparatus according to another exemplary embodiment. Fig.66 In the illustrated embodiment, the feeding coil unit 130 includes a plurality of feeding coils 131. The plurality of feeding coils 131 are connected in parallel between the resonant capacitor 132a and the resonant capacitor 132b. In addition, the receiving coil unit 140 includes a plurality of receiving coils 141. The plurality of receiving coils 141 are electromagnetically inductively coupled to the corresponding feeding coils 131. The plurality of receiving coils 141 are connected in parallel between the resonant capacitor 142a and the resonant capacitor 142b.

[0250] Reference Fig.67 . Fig.67 FIG. 1 is a diagram showing a power feeding coil unit and a power receiving coil unit in a plasma processing apparatus according to another exemplary embodiment. Fig.67 In the illustrated embodiment, the feeding coil unit 130 includes a plurality of feeding coils 131, a plurality of resonant capacitors 132a, and a plurality of resonant capacitors 132b. The plurality of feeding coils 131, the plurality of resonant capacitors 132a, and the plurality of resonant capacitors 132b constitute a plurality of resonant circuits connected in parallel with respect to the feeding unit 120. Each of the plurality of resonant circuits is constituted by a series connection of the resonant capacitor 132a, the feeding coil 131, and the resonant capacitor 132b.

[0251] exist Fig.67 In the illustrated embodiment, the power receiving coil unit 140 includes a plurality of power receiving coils 141, a plurality of resonant capacitors 142a, and a plurality of resonant capacitors 142b. The plurality of power receiving coils 141 are electromagnetically coupled to the corresponding power feeding coils 131. The plurality of power receiving coils 141, the plurality of resonant capacitors 142a, and the plurality of resonant capacitors 142b constitute a plurality of resonant circuits connected in parallel to the RF filter 200. Each of the plurality of resonant circuits is formed by a series connection of the resonant capacitor 142a, the power receiving coil 141, and the resonant capacitor 142b.

[0252] exist Fig.66 and Fig.67In each embodiment, the power feeding coil unit 130 and the power receiving coil unit 140 each include a plurality of coils connected in parallel, and have a plurality of resonant circuits each including a plurality of coils. In this way, a plurality of resonant circuits can be independently configured, so that a high power supply efficiency can be maintained. In addition, the degree of freedom of the configuration layout of the plurality of coils becomes higher. In addition, a large amount of electric power can be supplied.

[0253] [Electricity Storage Method of the Electricity Storage Unit]

[0254] Reference Fig.68 . Fig.68 FIG. 1 is a flow chart of a method for storing electricity in a storage unit according to an exemplary embodiment. In various exemplary embodiments of the plasma processing apparatus, it is possible to use Fig.68 The power storage method shown is to store power in power storage unit 160 (or power storage unit 160J).

[0255] The power storage unit 160 is loaded in advance in the plasma processing device. Fig.68 As shown, the power storage method starts in step STAa. In step STAa, power is supplied from the mounted power storage unit 160 to the rectifying and smoothing unit 150. In the next step STAb, communication is established between the rectifying and smoothing unit 150 and the feeding unit 120.

[0256] In the next step STAc, it is determined whether the electric power of the power storage unit 160 is sufficient to operate (run) the rectifying and smoothing unit 150. This determination can be performed in the control unit 152 of the rectifying and smoothing unit 150. When the electric power of the power storage unit 160 is insufficient to operate the rectifying and smoothing unit 150, step STAd is performed. In step STAd, by sending an instruction signal from the rectifying and smoothing unit 150 to the feeding unit 120, the power supply from the feeding unit 120 is started, and the power storage unit 160 is stored (initial charging).

[0257] On the other hand, when the electric power of the power storage unit 160 is sufficient to operate the rectifying and smoothing unit 150 , step STAe is performed. In step STAe, the constant voltage control unit 180 starts outputting a voltage to the load side such as the electric power consumption component 240 .

[0258] In the next step STAf, it is determined whether the electric power of the power storage unit 160 is sufficient to supply power to a load such as the power consumption component 240. This determination can be performed in the control unit 152 of the rectification and smoothing unit 150. In step STAf, the electric power of the power storage unit 160 is determined to be insufficient, for example, when the electric power is less than the first threshold value described above. When the electric power of the power storage unit 160 is insufficient, step STAg is performed. In step STAg, an instruction signal is sent from the rectification and smoothing unit 150 to the feeding unit 120, thereby instructing the feeding unit 120 to supply power. In the next step STAh, the feeding unit 120 starts to supply power to the power storage unit 160. Then, the process proceeds to step STAj.

[0259] On the other hand, when it is determined in step STAf that the electric power of the power storage unit 160 is sufficient, the power supply by the power feeding unit 120 is stopped by sending an instruction signal from the rectifying and smoothing unit 150 to the power feeding unit 120. In step STAf, the electric power of the power storage unit 160 is determined to be sufficient, for example, when the electric power is greater than the above-mentioned second threshold value. Then, the process proceeds to step STAj.

[0260] In step STAj, it is determined whether it is necessary to continue to supply power to a load such as the power consumption component 240. This determination can be performed in the control unit 152 of the rectifying and smoothing unit 150. If it is determined that it is necessary to continue to supply power to the load, the process returns to step STAc. On the other hand, if it is determined that it is not necessary to continue to supply power to the load, the process of the power storage method ends.

[0261] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different embodiments may be combined to form other embodiments.

[0262] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E32].

[0263] [E1]

[0264] A plasma processing device, characterized in that it comprises:

[0265] a plasma processing chamber;

[0266] a substrate support disposed within the plasma processing chamber;

[0267] an electrode or an antenna disposed outside the plasma processing space in the plasma processing chamber, the electrode or the antenna being disposed in such a manner that the space in the plasma processing chamber is located between the electrode or the antenna and the substrate support;

[0268] A high-frequency power source capable of generating high-frequency electric power, which is electrically connected to the substrate support, the electrode or the antenna;

[0269] at least one electrical power consumption component disposed within the plasma processing chamber or within the substrate support;

[0270] at least one power storage unit electrically connected to the at least one electric power consuming component; and

[0271] At least one power receiving coil is electrically connected to the at least one power storage unit and is capable of receiving electric power from the at least one power feeding coil through electromagnetic induction coupling.

[0272] [E2]

[0273] The plasma processing apparatus according to E1 is characterized in that the at least one power receiving coil can receive electric power from the at least one power feeding coil through magnetic field resonance.

[0274] [E3]

[0275] The plasma processing apparatus according to E1 or E2 is characterized in that the at least one power receiving coil constitutes a filter having a characteristic of suppressing transmission of the high-frequency electric power to the at least one power feeding coil.

[0276] [E4]

[0277] The plasma processing apparatus according to any one of E1 to E3 is characterized by further comprising a spacer formed of a dielectric and disposed between the at least one power receiving coil and the ground, wherein the spacer can provide a spatial parasitic capacitance between the at least one power receiving coil and the ground.

[0278] [E5]

[0279] The plasma processing apparatus according to any one of E1 to E4 is characterized by further comprising at least one power feeding coil capable of electromagnetic induction coupling with the at least one power receiving coil.

[0280] [E6]

[0281] The plasma processing device according to any one of items E1 to E5 is characterized in that the distance between the at least one power receiving coil and the at least one power feeding coil is set so that the attenuation of the high-frequency electric power between the at least one power receiving coil and the at least one power feeding coil is less than -20 dB, and the electric power from the at least one power feeding coil can be received in the at least one power receiving coil.

[0282] [E7]

[0283] The plasma processing apparatus according to any one of E1 to E6, characterized in that:

[0284] Also included is a rectifying and smoothing section, which includes:

[0285] a rectifier circuit connected to the at least one power receiving coil; and

[0286] A smoothing circuit is connected between the rectifying circuit and the at least one power storage unit.

[0287] [E8]

[0288] The plasma processing device according to E7 is characterized in that:

[0289] It also includes a feeding unit, which is electrically connected to the at least one feeding coil and can supply electric power to the at least one feeding coil.

[0290] The rectifying and smoothing unit includes a control unit capable of instructing the power feeding unit to supply electric power or stop the electric power according to the electric power stored in the at least one power storage unit.

[0291] [E9]

[0292] The plasma processing device according to E8 is characterized in that it also includes:

[0293] a signal line for an instruction signal for instructing supply of the electric power or stop of the electric power, the signal line connecting the rectifying and smoothing section and the power feeding section to each other; and

[0294] A filter is connected between the rectifying and smoothing unit and the power feeding unit and has a characteristic of suppressing transmission of the high-frequency electric power via the signal line.

[0295] [E10]

[0296] The plasma processing device according to E8 is characterized in that:

[0297] The rectifying and smoothing unit and the feeding unit each include a communication unit,

[0298] The communication unit of the rectifying and smoothing unit is connected to the communication unit of the feeding unit by wireless communication or optical fiber communication.

[0299] An instruction signal for instructing the supply of the electric power or the stop of the electric power can be transmitted from the communication section of the rectifying and smoothing section to the communication section of the power feeding section through the wireless communication or the optical fiber communication.

[0300] [E11]

[0301] The plasma processing apparatus according to any one of E7 to E10 is characterized in that the rectifying and smoothing unit is formed integrally with the at least one power storage unit.

[0302] [E12]

[0303] The plasma processing device according to E11 is characterized in that it also includes:

[0304] a ground frame that, together with the plasma processing chamber, surrounds the substrate support; and

[0305] an RF filter connected between the at least one power receiving coil and the rectifying and smoothing unit and having a characteristic of suppressing the transmission of the high frequency electric power,

[0306] The rectifying and smoothing unit and the at least one power storage unit are arranged in a space surrounded by the ground frame.

[0307] [E13]

[0308] The plasma processing device according to E11 is characterized in that:

[0309] Also included is a ground frame which surrounds the substrate support portion together with the plasma processing chamber,

[0310] The rectifying and smoothing unit and the at least one power storage unit are arranged outside a space surrounded by the ground frame.

[0311] [E14]

[0312] The plasma processing device according to E13 is characterized in that:

[0313] The invention further includes an RF filter having a characteristic of suppressing the transmission of the high-frequency electric power, and capable of suppressing the transmission of the high-frequency electric power to the at least one feeding coil.

[0314] [E15]

[0315] The plasma processing device according to any one of E7 to E10, further comprising:

[0316] a ground frame that, together with the plasma processing chamber, surrounds the substrate support; and

[0317] an RF filter connected between the at least one power storage unit and the rectifying and smoothing unit and having a characteristic of suppressing the transmission of the high-frequency electric power,

[0318] The at least one power storage unit is arranged in a space surrounded by the ground frame,

[0319] The rectifying and smoothing unit is arranged outside a space surrounded by the ground frame.

[0320] [E16]

[0321] The plasma processing device according to any one of E7 to E10, characterized in that:

[0322] Also included is a ground frame which surrounds the substrate support portion together with the plasma processing chamber,

[0323] The at least one power storage unit is arranged in a space surrounded by the ground frame,

[0324] The rectifying and smoothing unit is arranged outside a space surrounded by the ground frame.

[0325] [E17]

[0326] The plasma processing device according to E16 is characterized in that it also includes an RF filter connected between the rectifying and smoothing part and the at least one power receiving coil, and has the characteristic of suppressing the transmission of the high-frequency electric power.

[0327] [E18]

[0328] The plasma processing device according to any one of E7 to E10, characterized in that:

[0329] The at least one feeding coil, together with a first capacitor connected to one end thereof and a second capacitor connected to the other end thereof, forms a resonant circuit for a transmission frequency of electric power transmitted between the at least one feeding coil and the at least one receiving coil,

[0330] The at least one power receiving coil, together with a third capacitor connected to one end thereof and a fourth capacitor connected to the other end thereof, forms a resonant circuit for the transmission frequency.

[0331] The plasma processing device further includes an RF filter connected between the rectifying and smoothing unit and the at least one power receiving coil and having a characteristic of suppressing the transmission of the high frequency electric power.

[0332] The RF filter comprises:

[0333] a first inductor including one end connected to the third capacitor and the other end connected to the rectifying and smoothing unit;

[0334] a second inductor including one end connected to the fourth capacitor and the other end connected to the rectifying and smoothing unit;

[0335] a fifth capacitor connected between the one end of the first inductor and ground; and

[0336] A sixth capacitor is connected between the one end of the second inductor and the ground.

[0337] [E19]

[0338] The plasma processing device according to any one of E7 to E10, characterized in that:

[0339] The smoothing circuit includes at least one capacitor connected between a positive line and a negative line, wherein the positive line connects the rectifier circuit and the at least one power storage unit to each other, and the negative line connects the rectifier circuit and the at least one power storage unit to each other,

[0340] The smoothing circuit is configured to satisfy: a ratio of an amplitude of an output voltage of the smoothing circuit to an amplitude of an output voltage of the rectifier circuit is 3% or less, and a value obtained by dividing a cutoff frequency of the smoothing circuit by twice a transmission frequency of electric power transmitted between the at least one power feeding coil and the at least one power receiving coil is less than 1 / 10.

[0341] [E20]

[0342] The plasma processing apparatus according to E19 is characterized in that the smoothing circuit includes a plurality of capacitors connected in parallel between the positive line and the negative line as the at least one capacitor.

[0343] [E21]

[0344] The plasma processing device according to any one of E1 to E6 is characterized in that it also includes at least one voltage control unit, which is connected between the at least one power storage unit and the at least one electric power consumption component and can control the application of voltage to the at least one electric power consumption component and its stopping.

[0345] [E22]

[0346] The plasma processing device according to any one of E7 to E20 is characterized in that it also includes at least one voltage control unit, which is connected between the at least one power storage unit and the at least one electric power consumption component and can control the application of voltage to the at least one electric power consumption component and its stopping.

[0347] [E23]

[0348] The plasma processing device according to E22 is characterized in that:

[0349] further comprising a pulse generating section capable of generating, from the output voltage of the rectifier circuit, a synchronization pulse signal synchronized with the electric power transmitted between the at least one power feeding coil and the at least one power receiving coil,

[0350] The at least one voltage control unit can adjust the timing of applying the voltage to the at least one electric power consuming component and stopping the voltage application to the at least one electric power consuming component based on the synchronization pulse signal.

[0351] [E24]

[0352] The plasma processing apparatus according to any one of E21 to E23 is characterized by further comprising at least one voltage control converter as a DC-DC converter connected between the at least one power storage unit and the at least one voltage control unit.

[0353] [E25]

[0354] The plasma processing device according to E24 is characterized in that the at least one voltage control unit, the at least one voltage control converter and the at least one power storage unit are formed as one body.

[0355] [E26]

[0356] The plasma processing device according to E24 or E25, characterized in that:

[0357] Said at least one voltage controlled converter comprises:

[0358] a voltage detector capable of detecting a voltage between a pair of outputs of the voltage controlled converter;

[0359] a drive circuit capable of switching the voltage output of the voltage control converter and stopping it; and

[0360] The control unit can control the drive circuit to stop the voltage output of the at least one voltage control converter when the value of the voltage detected by the voltage detector is equal to or greater than a threshold value.

[0361] [E27]

[0362] The plasma processing apparatus according to any one of E24 to E26 is characterized in that the at least one voltage control converter includes a plurality of voltage control converters connected in parallel between the at least one voltage control unit and the at least one power storage unit.

[0363] [E28]

[0364] The plasma processing device according to any one of E1 to E27, characterized in that:

[0365] The at least one electric power consumption component comprises a first electric power consumption component and a second electric power consumption component,

[0366] The at least one power storage unit includes a first power storage unit connected to the first electric power consumption component and a second power storage unit connected to the second electric power consumption component,

[0367] The second electrical power consumption component comprises a sensor,

[0368] The second electric power consumption component is capable of receiving electric power from the second power storage unit when an abnormality occurs in the plasma processing apparatus.

[0369] [E29]

[0370] The plasma processing device according to E5 is characterized in that:

[0371] comprising a plurality of feeding coils, as the at least one feeding coil,

[0372] A plurality of power receiving coils electromagnetically inductively coupled to the plurality of power feeding coils are included as the at least one power receiving coil.

[0373] [E30]

[0374] The plasma processing device according to E29 is characterized in that:

[0375] The plurality of feeding coils are connected in series or in parallel,

[0376] The plurality of power receiving coils are connected in series or in parallel.

[0377] It should be understood from the above description that the various embodiments of the present invention are described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limited, and the true scope and spirit are represented by the attached claims.

[0378] Description of Reference Numerals

[0379] 1 ... plasma processing apparatus, 10 ... chamber, 11 ... substrate supporting portion, 110 ... ground frame, 120 ... power feeding portion, 130 ... power feeding coil portion, 140 ... power receiving coil portion, 150 ... rectifying and smoothing portion, 160 ... power storage portion, 170 ... voltage control converter, 180 ... constant voltage control portion, 240 ... electric power consumption component, 300 ... high frequency power supply.

Claims

1. A plasma processing device, characterized in that: include: a plasma processing chamber; a substrate support disposed within the plasma processing chamber; an electrode or an antenna disposed outside the plasma processing space in the plasma processing chamber, the electrode or the antenna being disposed in such a manner that the space in the plasma processing chamber is located between the electrode or the antenna and the substrate support; A high-frequency power source capable of generating high-frequency electric power, which is electrically connected to the substrate support, the electrode or the antenna; at least one electrical power consumption component disposed within the plasma processing chamber or within the substrate support; at least one power storage unit electrically connected to the at least one electric power consuming component; and At least one power receiving coil is electrically connected to the at least one power storage unit and is capable of receiving electric power from the at least one power feeding coil through electromagnetic induction coupling.

2. The plasma processing device according to claim 1, wherein: The at least one power receiving coil is capable of receiving electric power from the at least one power feeding coil through magnetic field resonance.

3. The plasma processing device according to claim 1 or 2, characterized in that: The at least one power receiving coil constitutes a filter having a characteristic of suppressing transmission of the high-frequency electric power to the at least one power feeding coil.

4. The plasma processing device according to claim 3, wherein: The invention also includes a spacer formed of a dielectric and disposed between the at least one power receiving coil and the ground, wherein the spacer can provide spatial parasitic capacitance between the at least one power receiving coil and the ground.

5. The plasma processing device according to claim 4, characterized in that: Also included is at least one power feeding coil capable of electromagnetic induction coupling with the at least one power receiving coil.

6. The plasma processing apparatus according to claim 5, wherein: The distance between the at least one power receiving coil and the at least one power feeding coil is set so that the attenuation of the high-frequency electric power between the at least one power receiving coil and the at least one power feeding coil is -20 dB or less and the at least one power receiving coil can receive electric power from the at least one power feeding coil.

7. The plasma processing apparatus according to claim 1, wherein: Also included is a rectifying and smoothing section, which includes: a rectifier circuit connected to the at least one power receiving coil; and A smoothing circuit is connected between the rectifying circuit and the at least one power storage unit.

8. The plasma processing apparatus according to claim 7, wherein: It also includes a feeding unit, which is electrically connected to the at least one feeding coil and can supply electric power to the at least one feeding coil. The rectifying and smoothing unit includes a control unit capable of instructing the power feeding unit to supply electric power or stop the electric power according to the electric power stored in the at least one power storage unit.

9. The plasma processing apparatus according to claim 8, wherein: Also includes: a signal line for an instruction signal for instructing supply of the electric power or stop of the electric power, the signal line connecting the rectifying and smoothing section and the feeding section to each other; and A filter is connected between the rectifying and smoothing unit and the power feeding unit and has a characteristic of suppressing transmission of the high-frequency electric power via the signal line.

10. The plasma processing apparatus according to claim 8, wherein: The rectifying and smoothing unit and the feeding unit each include a communication unit, The communication unit of the rectifying and smoothing unit is connected to the communication unit of the feeding unit by wireless communication or optical fiber communication. An instruction signal for instructing the supply of the electric power or the stop of the electric power can be transmitted from the communication section of the rectifying and smoothing section to the communication section of the power feeding section through the wireless communication or the optical fiber communication.

11. The plasma processing apparatus according to any one of claims 7 to 10, characterized in that: The rectifying and smoothing unit is formed integrally with the at least one power storage unit.

12. The plasma processing apparatus according to claim 11, wherein: Also includes: a ground frame, which together with the plasma processing chamber surrounds the substrate support; and an RF filter connected between the at least one power receiving coil and the rectifying and smoothing unit and having a characteristic of suppressing the transmission of the high frequency electric power, The rectifying and smoothing unit and the at least one power storage unit are arranged in a space surrounded by the ground frame.

13. The plasma processing apparatus according to claim 11, wherein: Also included is a ground frame which surrounds the substrate support portion together with the plasma processing chamber, The rectifying and smoothing unit and the at least one power storage unit are arranged outside a space surrounded by the ground frame.

14. The plasma processing apparatus according to claim 13, wherein: The invention further includes an RF filter having a characteristic of suppressing the transmission of the high-frequency electric power, and capable of suppressing the transmission of the high-frequency electric power to the at least one feeding coil.

15. The plasma processing apparatus according to any one of claims 7 to 10, wherein: Also includes: a ground frame, which together with the plasma processing chamber surrounds the substrate support; and an RF filter connected between the at least one power storage unit and the rectifying and smoothing unit and having a characteristic of suppressing the transmission of the high-frequency electric power, The at least one power storage unit is arranged in a space surrounded by the ground frame, The rectifying and smoothing unit is arranged outside a space surrounded by the ground frame.

16. The plasma processing apparatus according to any one of claims 7 to 10, characterized in that: Also included is a ground frame which surrounds the substrate support portion together with the plasma processing chamber, The at least one power storage unit is arranged in a space surrounded by the ground frame, The rectifying and smoothing unit is arranged outside a space surrounded by the ground frame.

17. The plasma processing apparatus according to claim 16, wherein: The device further includes an RF filter connected between the rectifying and smoothing unit and the at least one power receiving coil and having a characteristic of suppressing transmission of the high-frequency electric power.

18. The plasma processing apparatus according to any one of claims 7 to 10, characterized in that: The at least one feeding coil, together with a first capacitor connected to one end thereof and a second capacitor connected to the other end thereof, forms a resonant circuit for a transmission frequency of electric power transmitted between the at least one feeding coil and the at least one receiving coil, The at least one power receiving coil, together with a third capacitor connected to one end thereof and a fourth capacitor connected to the other end thereof, forms a resonant circuit for the transmission frequency. The plasma processing device further includes an RF filter connected between the rectifying and smoothing unit and the at least one power receiving coil and having a characteristic of suppressing the transmission of the high frequency electric power. The RF filter comprises: a first inductor including one end connected to the third capacitor and the other end connected to the rectifying and smoothing unit; a second inductor including one end connected to the fourth capacitor and the other end connected to the rectifying and smoothing unit; a fifth capacitor connected between the one end of the first inductor and ground; and A sixth capacitor is connected between the one end of the second inductor and the ground.

19. The plasma processing apparatus according to any one of claims 7 to 10, characterized in that: The smoothing circuit includes at least one capacitor connected between a positive line and a negative line, wherein the positive line connects the rectifier circuit and the at least one power storage unit to each other, and the negative line connects the rectifier circuit and the at least one power storage unit to each other, The smoothing circuit is configured to satisfy: a ratio of an amplitude of an output voltage of the smoothing circuit to an amplitude of an output voltage of the rectifier circuit is 3% or less, and a value obtained by dividing a cutoff frequency of the smoothing circuit by twice a transmission frequency of electric power transmitted between the at least one power feeding coil and the at least one power receiving coil is less than 1 / 10.

20. The plasma processing apparatus according to claim 19, wherein: The smoothing circuit includes a plurality of capacitors connected in parallel between the positive line and the negative line as the at least one capacitor.

21. The plasma processing apparatus according to claim 1, wherein: The device further includes at least one voltage control unit connected between the at least one power storage unit and the at least one electric power consumption component, and capable of controlling application of voltage to the at least one electric power consumption component and stopping application of voltage to the at least one electric power consumption component.

22. The plasma processing apparatus according to claim 7, wherein: The device further includes at least one voltage control unit connected between the at least one power storage unit and the at least one electric power consumption component, and capable of controlling application of voltage to the at least one electric power consumption component and stopping application of voltage to the at least one electric power consumption component.

23. The plasma processing apparatus according to claim 22, wherein: further comprising a pulse generating section capable of generating, from the output voltage of the rectifier circuit, a synchronization pulse signal synchronized with the electric power transmitted between the at least one power feeding coil and the at least one power receiving coil, The at least one voltage control unit can adjust the timing of applying the voltage to the at least one electric power consuming component and stopping the voltage application to the at least one electric power consuming component based on the synchronization pulse signal.

24. The plasma processing apparatus according to any one of claims 21 to 23, characterized in that: The system further includes at least one voltage control converter as a DC-DC converter connected between the at least one power storage unit and the at least one voltage control unit.

25. The plasma processing apparatus according to claim 24, wherein: The at least one voltage control unit, the at least one voltage control converter, and the at least one power storage unit are formed integrally.

26. The plasma processing apparatus according to claim 24, wherein: Said at least one voltage controlled converter comprises: a voltage detector capable of detecting a voltage between a pair of outputs of the voltage controlled converter; a drive circuit capable of switching the voltage output of the voltage control converter and stopping it; and The control unit can control the drive circuit to stop the voltage output of the at least one voltage control converter when the value of the voltage detected by the voltage detector is equal to or greater than a threshold value.

27. The plasma processing apparatus according to claim 24, wherein: The at least one voltage control converter includes a plurality of voltage control converters connected in parallel between the at least one voltage control unit and the at least one power storage unit.

28. The plasma processing device according to claim 1 or 2, characterized in that: The at least one electric power consumption component comprises a first electric power consumption component and a second electric power consumption component, The at least one power storage unit includes a first power storage unit connected to the first electric power consumption component and a second power storage unit connected to the second electric power consumption component, The second electrical power consumption component comprises a sensor, The second electric power consumption component is capable of receiving electric power from the second power storage unit when an abnormality occurs in the plasma processing apparatus.

29. The plasma processing apparatus according to claim 5, wherein: comprising a plurality of feeding coils, as the at least one feeding coil, A plurality of power receiving coils electromagnetically inductively coupled to the plurality of power feeding coils are included as the at least one power receiving coil.

30. The plasma processing apparatus according to claim 29, wherein: The plurality of feeding coils are connected in series or in parallel, The plurality of power receiving coils are connected in series or in parallel.

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