Yttrium oxide film based on PVD (Physical Vapor Deposition) and preparation method thereof

Abstract

The invention discloses a PVD (physical vapor deposition)-based yttrium oxide film and a preparation method thereof, and the preparation method comprises the following steps: step 1, pretreating a base material, and preheating under a vacuum condition and an argon atmosphere; 2, glow gas etching is carried out, and the bias voltage ranges from-800 V to-1000 V; 3, gas ion source etching is carried out, the bias voltage ranges from-100 V to-200 V, and the power of an ion source power source is increased to 2 kW from 0.5 kW in the etching process; step 4, coating and plating a metal transition layer, wherein the bias voltage is-60 to-120V; step 5, preparing a Y2O3 coating by adopting cathode ion arc plating; according to the preparation method, the arc light phenomenon on the surface of the insulating material can be reduced or inhibited, the surface morphology of the material is protected, the surface abnormal discharge phenomenon is avoided, and the coating with the thickness meeting the requirement can be obtained.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film preparation methods, and in particular to a PVD-based yttrium oxide thin film and a preparation method thereof. Background Art

[0002] Physical vapor deposition is an important method for preparing thin films, which mainly includes vacuum evaporation, magnetron sputtering and cathode arc ion plating.

[0003] During the evaporation process of vacuum evaporation, the evaporation rate of the film material and its influencing factors are closely related to its saturated vapor pressure. Therefore, vacuum evaporation technology is restricted by the properties of the material, and the evaporation of alloy materials will lead to component segregation. Compared with cathode arc ion plating, magnetron sputtering has lower deposition efficiency, lower atomic ionization rate, greater stress in the prepared film structure, and poor winding and bonding properties of magnetron sputtering. Cathode arc ion plating helps the occurrence of ionization, and O2 is no exception. However, when O2 is excessive or the original electric field changes, O2 is more likely to react on the cathode target surface to generate oxides, thereby causing the failure of cathode discharge and unable to output the required elements normally, which is "poisoning". Take the preparation of aluminum oxide coating as an example: Al and AlTi materials are relatively more likely to react with O2, so the conventional practice is to add a certain amount of Cr to the Al material to prevent the oxidation of the target surface. However, the stability of chromium oxide is relatively poor, which will lead to changes in the performance of the oxide coating. Therefore, none of the existing methods can meet the requirements. Summary of the invention

[0004] The present invention aims at solving the problems in the prior art and provides a PVD-based yttrium oxide film and a preparation method thereof.

[0005] The technical solution adopted by the present invention is:

[0006] A method for preparing an yttrium oxide film based on PVD, comprising the following steps:

[0007] Step 1: The substrate material is pretreated and preheated under vacuum conditions and argon atmosphere;

[0008] Step 2: Glow gas etching is performed with a bias voltage of -800 to -1000 V;

[0009] Step 3: Perform gas ion source etching with a bias voltage of -100 to -200 V. During the etching process, the ion source power increases from 0.5 kW to 2 kW.

[0010] Step 4: Metal transition layer coating, bias voltage is -60~-120V;

[0011] Step 5: Prepare Y2O3 coating by cathode ion arc plating;

[0012] O2 is introduced, and the flow rate of O2 is 30 to 150 sccm; the yttrium arc target current is 60 to 80A; the bias voltage is -40 to -120V;

[0013] Cathode arc source, DC voltage is 0.5~3.0V, pulse voltage is 10~30V, and pulse frequency is 13.3~33Hz.

[0014] Furthermore, the preheating temperature is 250-450° C., and the preheating time is 40-80 min; steps 2, 3, 4 and 5 all maintain this temperature condition.

[0015] Furthermore, the pretreatment in step 1 includes sequentially performing the following treatments:

[0016] Ultrasonic cleaning for 20-30 minutes, deionized water rinsing for 2-5 minutes; ultrasonic dehydration, drying;

[0017] The vacuum degree is 1.0×10 -1 Pa, Ar gas flow rate is 40~60sccm.

[0018] Furthermore, in step 4, the metal transition layer is Al or Cr, the arc target current is 40-100A, the cathode arc source DC voltage is 0.5-2.0V, the pulse voltage is 10-30V, and the pulse frequency is 16.7-33Hz.

[0019] Furthermore, in step 2, the flow rate of Ar is 180-300 sccm, and the etching time is 30-60 min.

[0020] Furthermore, in step 3, the flow rate of Ar is 60-100 sccm, and the etching time is 30-60 min.

[0021] Furthermore, in step 4, the flow rate of Ar is 100-150 sccm, and the coating time is 10-20 min.

[0022] Furthermore, in step 5, the flow rate of Ar is 100-150 sccm, and the deposition time is 120-600 min.

[0023] Furthermore, after depositing the coating in step 5, the following step is also included: cooling for 90 to 120 minutes.

[0024] A yttrium oxide film has a thickness of 5 to 20 μm and is cubic yttrium oxide and monoclinic yttrium oxide.

[0025] The beneficial effects of the present invention are:

[0026] (1) The present invention can suppress or reduce the arc phenomenon on the surface of the insulating material through the weak high-pressure glow discharge characteristic of argon gas in glow gas etching, thereby protecting the surface morphology of the material;

[0027] (2) The present invention uses gas ion source etching to clean the surface of the parts to be plated, and uses a method of gradually increasing the power of the ion source power supply to avoid abnormal surface discharge;

[0028] (3) The Y2O3 coating prepared by cathode arc ion plating in the present invention can have a thickness of up to 20 μm. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a cross-sectional SEM image of the coating obtained in Example 1 of the present invention.

[0030] Figure 2 This is the XRD diagram of the coating obtained in Example 1 of the present invention.

[0031] Figure 3 This is the XRD diagram of the coating obtained in Example 2 of the present invention. DETAILED DESCRIPTION

[0032] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0033] A method for preparing an yttrium oxide film based on PVD, comprising the following steps:

[0034] Step 1: The substrate material is pretreated and preheated under vacuum conditions and argon atmosphere;

[0035] Before coating, the parts to be plated are placed in a cleaning solution for ultrasonic cleaning for 20 to 30 minutes, rinsed with deionized water for 2 to 5 minutes, ultrasonically dehydrated with anhydrous alcohol solution, and dried with hot air.

[0036] The parts to be plated are mounted on a workpiece turntable and surrounded by a conductor frame. During the ion etching and coating process, ions are induced to move toward the insulating parts, thereby ensuring the ion cleaning effect of the insulating parts and enabling the coating process to proceed effectively to meet the design requirements, such as deposition rate, Y2O3 stoichiometric ratio and phase structure.

[0037] Before coating, you can also replace the pure yttrium arc target material as needed, clean all parts of the furnace body with a high-pressure air gun at a pressure of 0.6MPa, confirm that the workpiece turntable moves normally, and confirm the insulation status of the cathode arc source, workpiece turntable, and ion source.

[0038] Then vacuum and preheat:

[0039] When the vacuum value is less than 1.0×10 -1When ΔP is 0.0447 W / m, 40-60 sccm of Ar gas is introduced, and auxiliary heating is turned on. The temperature is set to 250-450°C and the time is 40-80 min.

[0040] Step 2: Glow gas etching is performed with a bias voltage of -800 to -1000 V;

[0041] 180 to 300 sccm of Ar gas was introduced, the temperature was set to 250 to 450°C, the bias power supply was turned on, the bias voltage was set to -800 to -1000 V, and the time was 30 to 60 minutes.

[0042] Step 3: Perform gas ion source etching with a bias voltage of -100 to -200 V. During the etching process, the ion source power increases from 0.5 kW to 2 kW for 30 to 60 minutes. For example, the power can be first set to 0.5 kW, then increased to 0.8 kW within 5 minutes, then increased to 1.1 kW within 5 minutes, until it increases to 2 kW. The specific time and interval can be set according to the specific situation, and the power increases gradually.

[0043] 60-100 sccm of Ar gas was introduced, the temperature was set to 250-450°C, and then the bias power supply was turned on.

[0044] Step 4: Metal transition layer coating; existing cathode ion arc plating can be used

[0045] 100-150sccm Ar gas is introduced; the temperature is set to 250-450℃; the bias power supply is turned on and the bias is set to -60--120V; the arc target current is 40-100A, and the cathode arc source electromagnetic field parameters are: the metal transition layer uses Al and Cr, the Ar flow rate is 100-150sccm, and the coating time is 10-20min; the arc target current is 40-100A, the DC voltage is 0.5-2.0V, the pulse voltage is 10-30V, and the pulse frequency is 16.7-33Hz.

[0046] The coating time is 10 to 20 minutes.

[0047] Step 5: Prepare Y2O3 coating by cathode ion arc plating; the temperature is set to 250-450°C;

[0048] 100-150sccm of Ar gas and O2 are introduced, and the flow rate of O2 is 30-150sccm; the yttrium arc target current is 60-80A; the bias voltage is -40--120V, and the duty cycle is 30-70%;

[0049] Cathode arc source, target current is 60-80A; DC voltage is 0.5-3.0V, pulse voltage is 10-30V, pulse frequency is 13.3-33Hz; coating time is 120-600min.

[0050] Finally, the coating is cooled for 90 to 120 minutes.

[0051] The present invention will be further described below by means of specific examples.

[0052] Example 1

[0053] A method for preparing an yttrium oxide film based on PVD, comprising the following steps:

[0054] Step 1: Before coating, place the Al substrate in a cleaning solution for ultrasonic cleaning for 20 minutes, rinse with deionized water for 2 minutes, ultrasonically dehydrate with anhydrous alcohol solution, and dry with hot air.

[0055] The parts to be plated are mounted on a workpiece turntable and surrounded by a conductor frame. During the ion etching and coating process, ions are induced to move toward the insulating parts, thereby ensuring the ion cleaning effect of the insulating parts and enabling the coating process to proceed effectively to meet the design requirements, such as deposition rate, Y2O3 stoichiometric ratio and phase structure.

[0056] Before coating, you can also replace the pure yttrium arc target material as needed, clean all parts of the furnace body with a high-pressure air gun at a pressure of 0.6MPa, confirm that the workpiece turntable moves normally, and confirm the insulation status of the cathode arc source, workpiece turntable, and ion source.

[0057] Then vacuum and preheat:

[0058] When the vacuum value is less than 1.0×10 -1 At 37°C, 50 sccm of Ar gas was introduced, and auxiliary heating was turned on with the temperature set to 300°C for 60 min.

[0059] Step 2: Glow gas etching

[0060] 200 sccm of Ar gas was introduced, the temperature was set to 300°C, the bias power supply was turned on, the bias voltage was set to -900 V, and the time was 40 minutes.

[0061] Step 3: Perform gas ion source etching with a bias voltage of -150V. During the etching process, the ion source power increases from 0.5kW to 2kW. First, the power is set to 0.5kW, then increased to 0.8kW within 10 minutes, then increased to 1.1kW within 10 minutes, until it increases to 2kW. The specific time and interval can be set according to the specific situation, and the power increases gradually.

[0062] 80 sccm of Ar gas was introduced, the temperature was set to 300° C., and then the bias power supply was turned on.

[0063] Step 4: Metal transition layer coating; existing cathode ion arc plating can be used

[0064] 180 sccm of Ar gas was introduced; the temperature was set to 300°C; the bias power supply was turned on and the bias voltage was set to -120V; the arc target current was 100A, and the cathode arc source electromagnetic field parameters were: DC voltage 0.5V, pulse voltage 30V, pulse frequency 16.7Hz; and the coating time was 15min.

[0065] Step 5: Prepare Y2O3 coating by cathode ion arc plating; the temperature is set to 300°C;

[0066] 180sccm of Ar gas and O2 were introduced, and the flow rate of O2 was 100sccm; the yttrium arc target current was 70A; the bias voltage was -80V, and the duty cycle was 50%;

[0067] Cathodic arc source, target current is 70A; DC voltage is 2.0V, pulse voltage is 20V, pulse frequency is 20Hz; coating time is 300min.

[0068] Finally, the coating was cooled for 100 min.

[0069] Example 2

[0070] A method for preparing an yttrium oxide film based on PVD, comprising the following steps:

[0071] Step 1: Before coating, place the Al2O3 substrate in a cleaning solution for ultrasonic cleaning for 20 minutes, rinse with deionized water for 2 minutes, ultrasonically dehydrate with anhydrous alcohol solution, and dry with hot air.

[0072] The parts to be plated are mounted on a workpiece turntable and surrounded by a conductor frame. During the ion etching and coating process, ions are induced to move toward the insulating parts, thereby ensuring the ion cleaning effect of the insulating parts and enabling the coating process to proceed effectively to meet the design requirements, such as deposition rate, Y2O3 stoichiometric ratio and phase structure.

[0073] Before coating, you can also replace the pure yttrium arc target material as needed, clean all parts of the furnace body with a high-pressure air gun at a pressure of 0.6MPa, confirm that the workpiece turntable moves normally, and confirm the insulation status of the cathode arc source, workpiece turntable, and ion source.

[0074] Then vacuum and preheat:

[0075] When the vacuum value is less than 1.0×10 -1At 37°C, 50 sccm of Ar gas was introduced, and auxiliary heating was turned on with the temperature set to 300°C for 60 min.

[0076] Step 2: Glow gas etching

[0077] 200 sccm of Ar gas was introduced, the temperature was set to 300°C, the bias power supply was turned on, the bias voltage was set to -900 V, and the time was 40 minutes.

[0078] Step 3: Perform gas ion source etching with a bias voltage of -150V. During the etching process, the ion source power increases from 0.5kW to 2kW. First, the power is set to 0.5kW, then increased to 0.8kW within 10 minutes, then increased to 1.1kW within 10 minutes, until it increases to 2kW. The specific time and interval can be set according to the specific situation, and the power increases gradually.

[0079] 80 sccm of Ar gas was introduced, the temperature was set to 300° C., and then the bias power supply was turned on.

[0080] Step 4: Metal transition layer coating; existing cathode ion arc plating can be used

[0081] 180 sccm of Ar gas was introduced; the temperature was set to 300°C; the bias power supply was turned on and the bias voltage was set to -60V; the arc target current was 80A, and the cathode arc source electromagnetic field parameters were: DC voltage 0.8V, pulse voltage 25V, pulse frequency 20.0Hz; and the coating time was 15min.

[0082] Step 5: Prepare Y2O3 coating by cathode ion arc plating; the temperature is set to 300°C;

[0083] 180sccm of Ar gas and O2 were introduced, and the flow rate of O2 was 100sccm; the yttrium arc target current was 70A; the bias voltage was -80V, and the duty cycle was 50%;

[0084] Cathodic arc source, target current is 70A; DC voltage is 2.0V, pulse voltage is 20V, pulse frequency is 20Hz; coating time is 300min.

[0085] Finally, the coating was cooled for 100 min.

[0086] Example 3

[0087] A method for preparing an yttrium oxide film based on PVD, comprising the following steps:

[0088] Step 1: Before coating, place the Al substrate in a cleaning solution for ultrasonic cleaning for 30 minutes, rinse with deionized water for 5 minutes, ultrasonically dehydrate with anhydrous alcohol solution, and dry with hot air.

[0089] The parts to be plated are mounted on a workpiece turntable and surrounded by a conductor frame. During the ion etching and coating process, ions are induced to move toward the insulating parts, thereby ensuring the ion cleaning effect of the insulating parts and enabling the coating process to proceed effectively to meet the design requirements, such as deposition rate, Y2O3 stoichiometric ratio and phase structure.

[0090] Before coating, you can also replace the pure yttrium arc target material as needed, clean all parts of the furnace body with a high-pressure air gun at a pressure of 0.6MPa, confirm that the workpiece turntable moves normally, and confirm the insulation status of the cathode arc source, workpiece turntable, and ion source.

[0091] Then vacuum and preheat:

[0092] When the vacuum value is less than 1.0×10 -1 When 240 Å was used as the heating medium, 60 sccm of Ar gas was introduced, and the auxiliary heating was turned on. The temperature was set to 450 °C and the time was 40 min.

[0093] Step 2: Glow gas etching

[0094] 300 sccm of Ar gas was introduced, the temperature was set to 250°C, the bias power supply was turned on, the bias voltage was set to -800 V, and the time was 60 minutes.

[0095] Step 3: Perform gas ion source etching with a bias voltage of -200V. During the etching process, the ion source power increases from 0.5kW to 2kW. First, the power is set to 0.5kW, then increased to 0.8kW within 8 minutes, then increased to 1.1kW within 8 minutes, until it increases to 2kW. The specific time and interval can be set according to the specific situation, and the power increases gradually.

[0096] 100 sccm of Ar gas was introduced, the temperature was set to 250°C, and then the bias power supply was turned on.

[0097] Step 4: Metal transition layer coating; existing cathode ion arc plating can be used

[0098] 100 sccm of Ar gas was introduced; the temperature was set to 450°C; the bias power supply was turned on and the bias voltage was set to -60V; the arc target current was 40A, and the cathode arc source electromagnetic field parameters were: DC voltage 2.0V, pulse voltage 10V, pulse frequency 33Hz; and the coating time was 10min.

[0099] Step 5: Prepare Y2O3 coating by cathode ion arc plating; the temperature is set to 450°C;

[0100] 100 sccm of Ar gas and O2 were introduced, and the flow rate of O2 was 30 sccm; the yttrium arc target current was 80A; the bias voltage was -120V, and the duty cycle was 30%;

[0101] Cathodic arc source, target current is 80A; DC voltage is 3.0V, pulse voltage is 10V, pulse frequency is 13.3Hz; coating time is 600min.

[0102] Finally, the coating was cooled for 120 min.

[0103] Example 4

[0104] A method for preparing an yttrium oxide film based on PVD, comprising the following steps:

[0105] Step 1: Before coating, place the Al substrate in a cleaning solution for ultrasonic cleaning for 25 minutes, rinse with deionized water for 4 minutes, ultrasonically dehydrate with anhydrous alcohol solution, and dry with hot air.

[0106] The parts to be plated are mounted on a workpiece turntable and surrounded by a conductor frame. During the ion etching and coating process, ions are induced to move toward the insulating parts, thereby ensuring the ion cleaning effect of the insulating parts and enabling the coating process to proceed effectively to meet the design requirements, such as deposition rate, Y2O3 stoichiometric ratio and phase structure.

[0107] Before coating, you can also replace the pure yttrium arc target material as needed, clean all parts of the furnace body with a high-pressure air gun at a pressure of 0.6MPa, confirm that the workpiece turntable moves normally, and confirm the insulation status of the cathode arc source, workpiece turntable, and ion source.

[0108] Then vacuum and preheat:

[0109] When the vacuum value is less than 1.0×10 -1 When 40 sccm of Ar gas was introduced, the auxiliary heating was turned on, the temperature was set to 250°C, and the time was 80 min.

[0110] Step 2: Glow gas etching

[0111] 180 sccm of Ar gas was introduced, the temperature was set to 450°C, the bias power supply was turned on, the bias was set to -1000 V, and the time was 30 minutes.

[0112] Step 3: Perform gas ion source etching with a bias voltage of -100V. During the etching process, the ion source power increases from 0.5kW to 2kW. First, the power is set to 0.5kW, then increased to 0.8kW within 8 minutes, then increased to 1.1kW within 8 minutes, until it increases to 2kW. The specific time and interval can be set according to the specific situation, and the power increases gradually.

[0113] 60 sccm of Ar gas was introduced, the temperature was set to 450°C, and then the bias power supply was turned on.

[0114] Step 4: Metal transition layer coating; existing cathode ion arc plating can be used

[0115] 150 sccm of Ar gas was introduced; the temperature was set to 250°C; the bias power supply was turned on and the bias voltage was set to -60V; the arc target current was 90A, and the cathode arc source electromagnetic field parameters were: DC voltage 1.0V, pulse voltage 20V, pulse frequency 25Hz; and the coating time was 20min.

[0116] Step 5: Prepare Y2O3 coating by cathode ion arc plating; the temperature is set to 250°C;

[0117] 150sccm of Ar gas and O2 were introduced, and the flow rate of O2 was 150sccm; the yttrium arc target current was 60A; the bias voltage was -40V, and the duty cycle was 70%;

[0118] Cathodic arc source, target current is 60A; DC voltage is 0.5V, pulse voltage is 30V, pulse frequency is 33Hz; coating time is 120min.

[0119] Finally, the coating was cooled for 90 minutes.

[0120] Figure 1 The cross-sectional SEM image of the coating obtained in the present invention shows that the average thickness of the coating is 7.921 μm.

[0121] The coating was tested by EDS, and the results are shown in Table 1

[0122] Table 1. EDS test results of coating components

[0123]

[0124] The XRD patterns of the samples obtained in Example 1 and Example 2 are as follows: Figure 2 and Figure 3 As shown, from Figure 2It can be seen that when Al is used as the substrate, the main phase of the coating is cubic Y2O3, containing monoclinic Y2O3. When Al2O3 is used as the substrate, the main phase is cubic Y2O3, with a very small amount of monoclinic Y2O3.

[0125] The hardness of the coatings obtained in Example 1 and Example 2 was tested, and a pure Y2O3 block was used as a comparison, and its hardness was 400-450 HV. The hardness of the coatings obtained in Example 1 and Example 2 is shown in Table 2.

[0126] Table 2. Hardness test results of the coatings obtained in Example 1 and Example 2

[0127]

[0128] It can be seen from the test results that the hardness of the coating prepared by the present invention is much higher than that of bulk Y2O3.

[0129] The present invention adopts glow etching to utilize the weak high-voltage glow discharge characteristics of argon gas, which can suppress or reduce the arc phenomenon on the surface of the insulating material in the early stage, thereby protecting the surface morphology of the material. Gas ion source etching is used to clean the surface of the parts to be plated, and for insulating parts, the occurrence of abnormal surface discharge phenomena is avoided. The Y2O3 coating is prepared by cathode arc ion plating, and the obtained coating thickness can meet the requirements. Pulse bias technology is usually used to solve the problem of positive charge accumulation on the surface insulating film. The CAS DC electromagnetic field is mainly used to solve the problem of weakening ion deposition energy. The DC voltage range is 0.5 to 3.0V. Its purpose is to push the evaporated atoms or ions to the near surface of the workpiece to react, thereby ensuring the stability of the insulating Y2O3 deposition rate and achieving the film thickness required by the process.

[0130] By changing the voltage (10-30V) and the pulse frequency of 13.3-33Hz, the lateral movement speed and trajectory of the arc spot can be controlled. The purpose is to maintain the effective evaporation target surface at a certain level during the long-term deposition of the oxide film to avoid being "poisoned". The selection of control parameters (pulsed magnetic field) is mainly related to the reaction gas, material, and oxide film performance. One of the key technologies for cathodic arc oxide coating technology is how to avoid the occurrence of target surface poisoning. The poisoning of the target surface can be effectively controlled during the long-term deposition process. The evaporation area of ​​Φ75 and Φ50 depends on the material and oxide film performance index requirements (including the film's phase structure, mechanical properties, oxygen content, and physical properties).

[0131] The various steps of the present invention are interrelated, coordinated and indispensable to obtain a large-sized Y2O3 coating. The thickness of the film during physical vapor deposition is closely related to the distance from the target surface to the workpiece surface. For a specific large-sized workpiece (with a diameter of not less than 1000 mm), the spatial position relationship between the CAS and the workpiece is designed to ensure that any point on the surface of the workpiece to be coated maintains a distance from the CAS in the range of 150 to 300 mm, thereby ensuring the consistency of the thickness of the Y2O3 film.

Claims

1. A method for preparing an yttrium oxide thin film based on PVD, characterized in that: The following steps are involved: Step 1: The substrate material is pretreated and preheated under vacuum conditions and argon atmosphere; Step 2: Glow gas etching is performed with a bias voltage of -800 to -1000 V; Step 3: Perform gas ion source etching with a bias voltage of -100 to -200 V. During the etching process, the ion source power increases from 0.5 kW to 2 kW. Step 4: Metal transition layer coating, bias voltage is -60~-120V; Step 5: Prepare Y2O3 coating by cathode ion arc plating; O2 is introduced, and the flow rate of O2 is 30 to 150 sccm; the yttrium arc target current is 60 to 80A; the bias voltage is -40 to -120V; Cathode arc source, DC voltage is 0.5~3.0V, pulse voltage is 10~30V, and pulse frequency is 13.3~33Hz.

2. The method for preparing a PVD-based yttrium oxide film according to claim 1, characterized in that: The preheating temperature is 250-450° C., and the preheating time is 40-80 min. Step 2, step 3, step 4 and step 5 all maintain this temperature condition.

3. The method for preparing a yttrium oxide thin film based on PVD according to claim 1, characterized in that: The pretreatment in step 1 includes performing the following treatments in sequence: Ultrasonic cleaning for 20-30 minutes, deionized water rinsing for 2-5 minutes; ultrasonic dehydration, drying; The vacuum degree is 1.0×10 -1 Pa, Ar gas flow rate is 40~60sccm.

4. The method for preparing a PVD-based yttrium oxide film according to claim 1, characterized in that: In step 4, the metal transition layer is made of Al or Cr, the arc target current is 40-100A, the cathode arc source DC voltage is 0.5-2.0V, the pulse voltage is 10-30V, and the pulse frequency is 16.7-33Hz.

5. The method for preparing a PVD-based yttrium oxide film according to claim 1, characterized in that: In step 2, the flow rate of Ar is 180-300 sccm, and the etching time is 30-60 min.

6. The method for preparing a yttrium oxide thin film based on PVD according to claim 1, characterized in that: In step 3, the flow rate of Ar is 60-100 sccm, and the etching time is 30-60 min.

7. The method for preparing a yttrium oxide thin film based on PVD according to claim 1, characterized in that: In step 4, the flow rate of Ar is 100-150 sccm, and the coating time is 10-20 min.

8. The method for preparing a yttrium oxide thin film based on PVD according to claim 1, characterized in that: In step 5, the flow rate of Ar is 100-150 sccm, and the deposition time is 120-600 min.

9. The method for preparing a PVD-based yttrium oxide film according to claim 1, characterized in that: After the coating is deposited in step 5, the following steps are also included: cooling for 90 to 120 minutes.

10. The yttrium oxide thin film obtained by the preparation method according to any one of claims 1 to 9, characterized in that: The thickness of the film is 5-20 μm, and the yttrium oxide film is cubic yttrium oxide and monoclinic yttrium oxide.

Images