A bionic structure thermophotonic active cooling device based on electroluminescence effect

Abstract

The present invention provides a biomimetic structure-based thermophoton active cooling device based on the electroluminescent effect, specifically belonging to the field of solid-state refrigeration technology. The device utilizes the negative voltage electroluminescent properties of semiconductor materials to suppress the thermal photon capacity of the semiconductor materials through the negative voltage electroluminescent effect, allowing heat to be transferred from the low-temperature thermophoton emitting end composite structure to the high-temperature semiconductor material, thereby achieving a cooling effect by transferring heat from the low-temperature end to the high-temperature end. The device also applies an electric field to the material, causing the energy of the radiated photons to change, generating a certain thermal effect, thereby achieving a cooling effect. This device does not involve traditional refrigerants and has a simple energy transmission path. It has the advantages of efficient energy utilization, environmental protection, miniaturization, rapid response, and multi-field application. The present invention includes a thermophoton emitting end composite structure and a semiconductor battery composite structure, as well as a shell body and an electrode assembly.

Description

Technical Field

[0001] The present invention relates to a bionic structure thermophoton active refrigeration device based on electroluminescence effect, and particularly belongs to the technical field of solid refrigeration. Background Art

[0002] Compared to traditional cooling technologies, electroluminescence technology does not rely on refrigerants and can provide more flexible thermal field control, making it a promising and efficient cooling technology that meets the needs of the low-carbon digital era. Electroluminescence cooling is a process that achieves cooling by applying an electric field to a material, causing a change in the energy of thermal photons, generating a certain thermal effect.

[0003] This technology has the advantages of not involving traditional refrigerants, having a simple energy transmission path, and super-Planck energy transmission. It is expected to achieve the synergy of high cooling coefficient and high cooling power, breaking the shackles of traditional thermoelectric cooling based on the Peltier effect. In addition, compared with existing refrigeration devices, it is smaller in size and lighter in weight, suitable for micro-integrated applications, making it possible to achieve innovative applications in wearable devices and passive heat dissipation, smart buildings, medical equipment and other fields, and promote the development of these fields. Summary of the Invention

[0004] The purpose of the present invention is to provide a bionic structure thermophotonic active refrigeration device based on the electroluminescent effect to solve the technical problem that the existing solid-state refrigeration technology is difficult to achieve the synergistic technical problem of high refrigeration coefficient and high refrigeration power.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is as follows: the invention includes a thermal photon emission end composite structure and a semiconductor battery composite structure, and also includes a shell body and an electrode assembly;

[0006] The thermal photon emission end composite structure includes a bionic metasurface film and an emission end substrate, the bionic metasurface film is arranged on the top surface of the emission end substrate, and the semiconductor battery composite structure includes a P-type mercury cadmium telluride layer, an I-type mercury cadmium telluride layer and an N-type mercury cadmium telluride layer arranged from the outside to the inside; the electrode assembly includes a back electrode and a front electrode, the top surface of the semiconductor battery composite structure is provided with a back electrode, the top surface of the epitaxial part of the N-type mercury cadmium telluride layer is provided with a front electrode, the bottom surface of the epitaxial part of the back electrode is provided with a shell body, the other end of the shell body is connected to the epitaxial part of the emission end substrate, and a gap is formed between the thermal photon emission end composite structure and the semiconductor battery composite structure through the shell body.

[0007] Furthermore, the semiconductor cell composite structure is composed of a PIN structure, and an Au layer is deposited on an InAs wafer substrate using magnetron sputtering technology. This layer is used as the back electrode of the photovoltaic semiconductor cell, and a P-type HgCdTe layer, an I-type HgCdTe layer and an N-type HgCdTe layer are stacked from bottom to top using vapor phase epitaxial growth technology, wherein the P-type HgCdTe layer and the N-type HgCdTe layer form a tunnel junction for transmitting carriers generated by the I-type HgCdTe absorption layer, and finally a front electrode is arranged on the outer edge of the N-type HgCdTe layer using an Au electrode wet etching process based on maskless lithography.

[0008] The thermal photon emission end composite structure is composed of a high bandgap radiation energy generation coating and an emission end substrate. The high bandgap radiation energy generation coating is plated on the upper surface of the emission end substrate. The emission end substrate is composed of a highly doped silicon wafer with a doping concentration greater than 10 20 cm -3 , and the surface roughness of the emitting end substrate is less than 10 nanometers, the high bandgap radiation energy generating coating is composed of a polymer resonance film, and the polymer resonance film is composed of a patterned nanoarray structure and an intrinsic silicon matrix material.

[0009] Furthermore, the back electrode and the front electrode are connected via a DC power supply, and the voltage between the back electrode and the front electrode is 0V-0.25V.

[0010] Furthermore, the patterned nanoarray structure is composed of periodically arranged bionic micro-nanostructures similar to the Morpho butterfly. Gate wing structures of the same thickness and width are asymmetrically distributed on both sides of the patterned nanoarray structure. The thickness of each gate wing is 10 nanometers, and the distance between the gate wings is 10 nanometers. The distribution period between the bionic micro-nanostructures is 100 nanometers. The material of the bionic micro-nanostructure is hBN, and the matrix material is composed of low-radiation materials such as intrinsic silicon and SU8. The thickness of the matrix material is 100 nanometers.

[0011] Furthermore, the thickness of the P-type HgCdTe layer is 100 nanometers to 500 nanometers, the thickness of the I-type HgCdTe layer is 100 nanometers to 2000 nanometers, and the thickness of the N-type HgCdTe layer is 100 nanometers to 500 nanometers.

[0012] Furthermore, the shell body is made of Cu4TiSe4 crystal material, and the vertical spacing of the shell body is 410 nanometers to 3600 nanometers.

[0013] Furthermore, the shell body and the P-type HgCdTe layer, the I-type HgCdTe layer, and the N-type HgCdTe layer are deposited on the bottom surface of the back electrode by magnetron sputtering.

[0014] The beneficial effects of the present invention are:

[0015] 1. Utilize the negative voltage electroluminescence characteristics of semiconductor materials, through the negative voltage electroluminescence effect, suppress the thermal photon capacity of semiconductor materials, so that heat can be transferred from the low-temperature thermal photon emission end composite structure to the high-temperature semiconductor material, thereby realizing the heat flow from the low-temperature end to the high-temperature end, achieving a cooling effect.

[0016] 2. By applying an electric field in the material, the energy of the radiated photons changes, generating a certain thermal effect, thereby achieving a cooling effect. This does not involve traditional refrigerants and the energy transmission path is simple. It has the advantages of efficient energy utilization, green environmental protection, miniaturized application, rapid response and multi-field application.

[0017] 3. By using evanescent waves as the main energy carrier, its heat transfer can exceed the blackbody radiation limit by several orders of magnitude. In addition, the spectral energy distribution of the device is not constrained by Planck's law and exhibits a significant monochromatic effect. Its theoretical limit can approach the Carnot efficiency.

[0018] 4. Compared with thin films and traditional gratings, this bionic metasurface shows significant advantages in radiative heat transfer capability. The enhancement comes from the inherent three-dimensional layered local resonance within the structure, which effectively changes the distribution of thermal photon tunneling wave vectors and provides an unconventional thermal photon tunneling mode, thereby effectively enhancing the energy spectrum of the thermal metasurface. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a structural diagram of the thermal photon active refrigeration device based on thermal photon tunneling of the present invention;

[0020] Figure 2 It is a schematic diagram of the bionic supersurface film structure. DETAILED DESCRIPTION

[0021] The following will be combined with the Figure 1-2 , clearly and completely describe the technical solutions in the embodiments.

[0022] Specific implementation method 1: Figure 1 As shown, a bionic structure thermophoton active cooling device based on the electroluminescent effect is composed of a thermophoton emission end composite structure, a semiconductor battery composite structure, a shell body 3 and an electrode assembly. From top to bottom, a back electrode 4, a P-type HgCdTe layer 5, an I-type HgCdTe layer 6, an N-type HgCdTe layer 7, a bionic metasurface film 1 and an emission end substrate 2 are sequentially arranged. The front electrode 8 is attached to the epitaxial portion of the N-type HgCdTe layer 7 by magnetron sputtering technology, and the shell body 3 is attached to the epitaxial portion of the back electrode 4 by magnetron sputtering technology.

[0023] The shell body 3, the back electrode 4, the P-type HgCdTe layer 5, the I-type HgCdTe layer 6, the N-type HgCdTe layer 7 and the front electrode 8 together constitute the hot end portion of the negative voltage electroluminescent cooling device;

[0024] The hot end is partially placed upside down on the top surface of the emitting end substrate 2, and a vacuum gap is formed between the thermal photon emitting end composite structure and the semiconductor battery composite structure through the shell body 3;

[0025] The thermal photon emission end composite structure is composed of a high-bandgap radiation energy generating coating and an emission end substrate 2. The high-bandgap radiation energy generating coating is coated on the upper surface of the emission end substrate 2. The bionic supersurface film 1 is composed of a patterned nanoarray structure and a matrix material. The patterned nanoarray is composed of a periodically arranged bionic micro-nano structure similar to a morpho butterfly. The bionic structure is asymmetrically distributed with grating structures of the same thickness and width on both sides. The thickness of each grating wing is 10 nanometers, and the distance between the grating wings is 10 nanometers. The distribution period between the bionic micro-nano structures is 100 nanometers. The material of the bionic micro-nano structure is hBN, and the matrix material is composed of SU8. Figure 2 As shown, the thickness of the matrix material is 100 nanometers; the temperature of the thermal emitter is 295 Kelvin-350 Kelvin;

[0026] The material of the semiconductor battery composite structure is mercury cadmium telluride, which has a bandgap frequency of 2.568×1014 rad / s. The low bandgap frequency ensures that it can have a wide spectrum of radiation frequencies to participate in the semiconductor electron transition process; the thickness of the P-type mercury cadmium telluride layer 5 is 100 nanometers to 500 nanometers, the thickness of the I-type mercury cadmium telluride layer 6 is 100 nanometers to 2000 nanometers, and the thickness of the N-type mercury cadmium telluride layer 7 is 100 nanometers to 500 nanometers. The temperature of the semiconductor battery is 300 Kelvin to 355 Kelvin.

[0027] The vertical spacing of the shell body 3 is 610 nanometers, that is, the spacing between the N-type HgCdTe layer 7 and the biomimetic supersurface film 1 is 10 nanometers; the shell body 3 is composed of Cu4TiSe4 crystal material and is prepared on the surface of the back electrode 4 by vapor phase epitaxial growth technology and photolithography;

[0028] The back electrode 4 and the front electrode 8 are connected by a DC power supply, and the voltage between the back electrode 4 and the front electrode 8 is 0V-0.25V, where the N pole is the positive end of the voltage and the P pole is the negative end of the voltage;

[0029] Specific embodiment 2: This embodiment differs from specific embodiment 1 in that the vertical spacing of the shell body 3 is 1100 nanometers, that is, the spacing between the N-type mercury cadmium telluride layer 7 and the bionic metasurface 1 is 100 nanometers, and the other steps and parameters are the same as those in specific embodiment 1.

[0030] Specific embodiment three: This embodiment differs from specific embodiment two in that the vertical spacing of the shell body 3 is 2000 nanometers, that is, the spacing between the N-type mercury cadmium telluride layer 7 and the bionic supersurface film 1 is 1000 nanometers. Other steps and parameters are the same as those in specific embodiment one;

[0031] In this embodiment, when no voltage is applied to the semiconductor, that is, under equilibrium conditions, the chemical potential of the photon is zero. However, when the semiconductor PN junction is subjected to an external bias voltage, the Planck energy of the photon above the band gap in the semiconductor is modified by the voltage. When the external bias voltage is negative, that is, the N-pole is the positive end of the voltage and the P-pole is the negative end, the Planck energy of the photon in the semiconductor is suppressed. In this case, the actual thermal photon energy of the semiconductor will be significantly less than its nominal thermal photon energy. In this case, although the actual temperature of the thermal photon emission end is lower than the actual temperature of the semiconductor end, the actual radiation energy of the thermal photon emission end is higher than the actual thermal photon energy of the semiconductor end, thereby achieving a cooling effect by allowing heat flow from the low-temperature end to the high-temperature end. As the voltage continues to increase, the radiative heat transfer capacity of the system will be greatly increased. As the voltage increases, the cooling power density of the thermal photon active cooling device based on thermal photon tunneling will continue to increase. Thanks to the monochromatic effect of thermal photon tunneling and the simple energy transmission path, the thermal photon energy transfer of the system can be completely concentrated above the semiconductor band gap frequency, greatly improving the cooling efficiency of the system.

[0032] This device uses thermal photons for energy transfer. An external bias voltage can suppress the Planck energy of photons above the semiconductor band gap, resulting in the semiconductor's actual thermal photon energy being significantly less than its nominal thermal photon energy. Consequently, the actual radiated energy at the thermal photon emission end is higher than the actual thermal photon energy at the semiconductor end, thereby achieving efficient cooling by transferring energy from the low-temperature end to the high-temperature end. Furthermore, the present invention's active cooling device based on thermal photon tunneling has the advantages of not involving traditional refrigerants, a simple energy transmission path, and super-Planck energy transmission. It is particularly suitable for applications such as wearable thermal management systems, in-situ thermal management of power batteries, cooling of medical devices and biological samples, and lightweight thermal management systems.

[0033] The above description is merely a preferred embodiment of the present invention and does not constitute any form of limitation to the present invention. Although the present invention has been disclosed as a preferred embodiment as above, it is not intended to limit the present invention. Any technician familiar with the present profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical content disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent replacement and improvement of the above embodiments made according to the technical essence of the present invention, within the spirit and principles of the present invention, without departing from the content of the technical solution of the present invention, shall still fall within the scope of protection of the technical solution of the present invention.

Claims

1. A bionic structure thermophoton active cooling device based on electroluminescence effect, comprising a thermophoton emission end composite structure and a semiconductor battery composite structure, characterized in that: Also includes a shell body (3) and an electrode assembly; The thermal photon emission end composite structure comprises a bionic supersurface film (1) and an emission end substrate (2), wherein the bionic supersurface film (1) is arranged on the top surface of the emission end substrate (2), and the semiconductor battery composite structure comprises a P-type mercury cadmium telluride layer (5), an I-type mercury cadmium telluride layer (6), and an N-type mercury cadmium telluride layer (7) arranged from top to bottom; The electrode assembly comprises a back electrode (4) and a front electrode (8); the back electrode (4) is arranged on the top surface of the semiconductor battery composite structure; the front electrode (8) is arranged on the top surface of the epitaxial portion of the N-type mercury cadmium telluride layer (7); the shell body (3) is arranged on the bottom surface of the epitaxial portion of the back electrode (4); the other end of the shell body (3) is connected to the epitaxial portion of the emission end substrate (2); and a gap is formed between the thermal photon emission end composite structure and the semiconductor battery composite structure through the shell body (3).

2. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 1, characterized in that: The back electrode (4) and the front electrode (8) are connected via a DC power supply, and the voltage between the back electrode (4) and the front electrode (8) is 0 volts to 0.25 volts.

3. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 1, characterized in that: The bionic super surface film (1) is composed of a polymer resonance film, and the polymer resonance film is composed of a patterned nano array structure and an intrinsic silicon matrix material.

4. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 3, characterized in that: The patterned nanoarray structure consists of periodically arranged bionic micro-nanostructures similar to the Morpho butterfly. Gate wing structures of the same thickness and width are asymmetrically distributed on both sides of the patterned nanoarray structure. The thickness of each gate wing is 10 nanometers, and the distance between the gate wings is 10 nanometers. The distribution period between the bionic micro-nanostructures is 100 nanometers. The material of the bionic micro-nanostructure is hBN, and the matrix material is composed of SU8, and the thickness of the matrix material is 100 nanometers.

5. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 1, characterized in that: The emitter substrate (2) is composed of a highly doped silicon wafer, the doping concentration of which is greater than 10 20 cm -3 , and the surface roughness of the emitting end substrate (2) is less than 10 nanometers.

6. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 1, characterized in that: The thickness of the P-type mercury cadmium telluride layer (5) is 100 nanometers to 500 nanometers, the thickness of the I-type mercury cadmium telluride layer (6) is 100 nanometers to 2000 nanometers, and the thickness of the N-type mercury cadmium telluride layer (7) is 100 nanometers to 500 nanometers.

7. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 1, characterized in that: The shell body (3) is made of Cu4TiSe4 crystal material, and the vertical spacing of the shell body (3) is 410 nanometers to 3600 nanometers.

8. The bionic structure thermophoton active cooling device based on electroluminescence effect according to claim 1, characterized in that: The shell body (3) and the P-type mercury cadmium telluride layer (5), the I-type mercury cadmium telluride layer (6), and the N-type mercury cadmium telluride layer (7) are deposited and plated on the bottom surface of the back electrode (4) by magnetron sputtering.

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