Transient current determination method and device for IGBT (Insulated Gate Bipolar Translator) device

Abstract

The invention discloses a transient current determination method and device for an IGBT device, and relates to the technical field of power electronics, and the method comprises the steps: determining the working state of the IGBT device in response to the determination of the second-class short circuit of the IGBT device, the working state comprising a saturation region and an active region; determining a first change rate of a collector current of the IGBT device in response to the condition that the working state is the saturation region, and determining a first transient current of the IGBT device according to the first change rate of the collector current; and determining a second transient current of the IGBT device according to a control relation of a gate emitter voltage to a collector current in response to the working state of the active region. Based on the technical scheme of the invention, after the IGBT device generates the second-class short circuit, the state of the collector current and the state of the collector-emitter voltage can be mastered, and a certain guiding significance is provided for IGBT state detection.

Description

Technical Field

[0001] The present invention relates to the field of power electronics technology, and in particular to a method and device for determining transient current of an IGBT device. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor) devices have the advantages of fast switching speed of MOSFET devices and low conduction loss of bipolar devices. They have been widely used in new energy converters, flexible DC transmission equipment, dynamic reactive power compensation equipment and other occasions.

[0003] IGBT turn-on transient collector current i C and collector-emitter voltage u CE There are drastic changes in C with u CE Understanding the status is very important for power loss analysis and transient electrical stress analysis.

[0004] This section is intended to provide a background or context to the embodiments of the invention recited in the claims. No admission is made that the description herein is prior art by inclusion in this section. Summary of the invention

[0005] In order to solve at least one of the technical problems mentioned in the above background technology section, the present application provides a method and device for determining the transient current of an IGBT device, which has certain guiding significance for IGBT state detection.

[0006] In a first aspect, an embodiment of the present invention provides a method for determining a transient current of an IGBT device, the method comprising:

[0007] In response to determining that a second type short circuit occurs in the IGBT device, determining a working state of the IGBT device, wherein the working state includes a saturation region and an active region;

[0008] In response to the working state being the saturation region, determining a first change rate of the collector current of the IGBT device, and determining a first transient current of the IGBT device according to the first change rate of the collector current;

[0009] In response to the working state being the active region, a second transient current of the IGBT device is determined according to a control relationship between a gate-emitter voltage and a collector current.

[0010] In some optional aspects of this embodiment, the step of determining whether the IGBT device has a second-class short circuit includes:

[0011] Determining whether the IGBT device is turned on;

[0012] In response to determining that the IGBT device is turned on, determining whether a short circuit is formed between a first preset node and a second preset node of a half-bridge circuit;

[0013] In response to determining that the first preset node and the second preset node are short-circuited, it is determined that a second type short circuit occurs in the IGBT device.

[0014] In some optional aspects of this embodiment, the step of determining the working state of the IGBT device includes:

[0015] Obtaining an output characteristic curve of the IGBT device;

[0016] Determining the relationship between collector current and collector-emitter voltage according to the output characteristic curve;

[0017] In response to the collector current linearly increasing with the increase of the collector-emitter voltage, determining that the operating state is the saturation region;

[0018] In response to the collector current not increasing linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

[0019] In some optional aspects of this embodiment, determining a first rate of change of the collector current of the IGBT device includes:

[0020] The first change rate of the collector current is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, and the parasitic inductance of the IGBT device package.

[0021] In some optional aspects of this embodiment, before determining the second transient current of the IGBT device according to the control relationship between the gate-emitter voltage and the collector current, the transient current determination method further includes:

[0022] Determine the rate of change of collector-emitter voltage;

[0023] The gate-emitter voltage is determined according to a control relationship between the collector-emitter voltage and the gate-emitter voltage and a change rate of the collector-emitter voltage.

[0024] In some optional aspects of this embodiment, determining the rate of change of the collector-emitter voltage includes:

[0025] The change rate of the collector-emitter voltage is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, the parasitic inductance of the IGBT device package, and the second change rate of the collector current.

[0026] In a second aspect, an embodiment of the present invention further provides a transient current determination device for an IGBT device, the device comprising:

[0027] A working state determination module, configured to determine a working state of the IGBT device in response to determining that a second type short circuit occurs in the IGBT device, wherein the working state includes a saturation region and an active region;

[0028] a first transient current determination module, configured to determine a first change rate of the collector current of the IGBT device in response to the working state being the saturation region, and determine a first transient current of the IGBT device according to the first change rate of the collector current;

[0029] The second transient current determination module is configured to determine a second transient current of the IGBT device in response to the working state being the active region and according to a control relationship between a gate-emitter voltage and a collector current.

[0030] In a third aspect, an embodiment of the present invention further provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the above-mentioned method for determining transient current of an IGBT device when executing the computer program.

[0031] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method for determining a transient current for an IGBT device is implemented.

[0032] In a fifth aspect, an embodiment of the present invention further provides a computer program product, the computer program product comprising a computer program, and when the computer program is executed by a processor, the computer program implements the above-mentioned method for determining transient current of an IGBT device.

[0033] The embodiments of the present invention provide a method and device for determining transient current of an IGBT device. After a type II short circuit occurs in the IGBT device, the states of the collector current and the collector-emitter voltage can be grasped, which has certain guiding significance for IGBT state detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0035] Figure 1This is one of the schematic flow charts of a method for determining a transient current of an IGBT device according to an embodiment of the present invention;

[0036] Figure 2 This is a second schematic flow chart of a method for determining a transient current of an IGBT device according to an embodiment of the present invention;

[0037] Figure 3 It is a structural schematic diagram of a half-bridge circuit model according to an embodiment of the present invention;

[0038] Figure 4 This is a schematic flow chart of a method for determining a transient current of an IGBT device according to an embodiment of the present invention;

[0039] Figure 5 Schematic diagram of the circuit output characteristic curve after the second type of short circuit in an embodiment of the present invention;

[0040] Figure 6 This is a schematic diagram of the structure of an IGBT chip according to an embodiment of the present invention;

[0041] Figure 7 It is a structural schematic diagram of a transient current determination device for an IGBT device according to an embodiment of the present invention;

[0042] Figure 8 A schematic diagram of the physical structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention more clearly understood, the embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings. Here, the exemplary embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0044] The embodiment of the present application provides a method for determining a transient current of an IGBT device, such as Figure 1 As shown, the method includes:

[0045] Step 10: In response to determining that a second type short circuit occurs in the IGBT device, determine a working state of the IGBT device, wherein the working state includes a saturation region and an active region.

[0046] It should be noted that the short circuit of IGBT can be divided into Class I short circuit and Class II short circuit according to the short circuit type: a direct connection occurs within the bridge arm, which is called a Class I short circuit; the short circuit point occurs on the load side, and the equivalent short circuit impedance is larger, which is called a Class II short circuit.

[0047] In some optional embodiments of this embodiment, Figure 2 As shown, the step of determining that the IGBT device has a second type of short circuit includes:

[0048] Step S1, determining whether the IGBT device is turned on;

[0049] Step S2, in response to determining that the IGBT device is turned on, determining whether a first preset node and a second preset node of a half-bridge circuit are short-circuited;

[0050] Step S3: in response to determining that the first preset node and the second preset node are short-circuited, determining that a second type short circuit occurs in the IGBT device.

[0051] In this step, first determine whether the IGBT device is in the on state; secondly, based on determining that the IGBT device is on, determine whether a short circuit occurs between a first preset node and a second preset node set on the half-bridge circuit model; finally, based on determining the short circuit, determine that a Class II short circuit occurs in the IGBT device.

[0052] In this application, the IGBT device is arranged as follows Figure 3 In the half-bridge circuit model shown in FIG. 1 , the reference direction of the voltage and current in the half-bridge circuit model is already in Figure 3 When a short circuit occurs in half of the bridge arm of the commutation circuit (for example, a short circuit occurs between point A and point K) while the IGBT is already turned on, a type II short circuit will occur in the IGBT.

[0053] In addition, it should be noted that Figure 2 Middle,U DC is the DC bus voltage, u GE is the gate voltage, R G is the gate resistance, U G,on is the gate power supply voltage, u CE is the collector-emitter voltage (u CE,chip is the collector-emitter voltage of the IGBT chip, L s,CE is the parasitic inductance of the IGBT device package), i C is the collector current, u F is the FWD voltage (u F,chip is the chip collector emitter voltage, L s,F is the parasitic inductance of the FWD device package), i F is the FWD current, I L is the load inductor current, L s,1 is the parasitic inductance of the IGBT circuit, L s,2 is the parasitic inductance value of the FWD freewheeling circuit.

[0054] Further, in this embodiment, after it is determined that the second type short circuit occurs in the IGBT device, it is necessary to first determine the working state of the IGBT device.

[0055] In this embodiment, the working state of the IGBT is divided into the following parts:

[0056] Cut-off region: When the CE voltage (collector-emitter voltage) is less than a threshold voltage, the PN junction on the back of the IGBT is cut off and no current flows.

[0057] Saturation region: When the voltage between CE is greater than the threshold voltage, current begins to flow, and the voltage between CE increases linearly as the collector current increases.

[0058] Active region (linear region): As the voltage between CE continues to rise, the current increases further. After reaching a certain critical point, the CE voltage increases rapidly, but the collector current does not increase accordingly.

[0059] In some optional embodiments of this embodiment, Figure 4 As shown, the step of determining the working state of the IGBT device includes:

[0060] Step 101, obtaining an output characteristic curve of the IGBT device;

[0061] Step 102, determining the relationship between collector current and collector-emitter voltage according to the output characteristic curve;

[0062] Step 103, in response to the collector current linearly increasing with the increase of the collector-emitter voltage, determining that the working state is the saturation region;

[0063] Step 104: In response to the collector current not increasing linearly with the increase of the collector-emitter voltage, determining that the working state is the active region.

[0064] In this application, the determination of the active region and saturation region of the IGBT device is mainly based on its output characteristic curve (e.g. Figure 5 ). When the IGBT device operates in the saturation region, the collector current i C With collector voltage u CE When the IGBT enters the active region, the collector current i C No longer with the collector voltage u CE At this time, the loss of IGBT increases and needs to be avoided.

[0065] In this embodiment, in order to prevent the IGBT device from entering the active area, the following measures can be taken: Rationally design the circuit: ensure that the load current does not exceed the rated value of the IGBT device. Set up overcurrent protection devices: such as current sensors and fuses, etc., to cut off the power supply in time when the current is too large. Optimize the heat dissipation design: increase the area of ​​the heat sink, improve the thermal conductivity of the heat dissipation material, etc., monitor the temperature of the IGBT in real time and take cooling measures when the temperature is too high. Adjust the drive circuit: ensure that the design of the drive circuit is reasonable to avoid the IGBT not being able to work properly due to the high frequency of the drive signal or improper parameter settings.

[0066] Step 20: In response to the working state being the saturation region, determining a first change rate of the collector current of the IGBT device, and determining a first transient current of the IGBT device according to the first change rate of the collector current.

[0067] In some optional aspects of this embodiment, determining a first rate of change of the collector current of the IGBT device includes:

[0068] The first change rate of the collector current is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, and the parasitic inductance of the IGBT device package.

[0069] See also Figure 5 , which is a schematic diagram of the output characteristic curve of the second type short circuit transient process of the IGBT device. Figure 5 It can be seen that t SC is the moment when a short circuit occurs between point A and point K. Figure 5 t sc During the period from t1 to t2, the IGBT device is still in the saturation region. C The rate of change satisfies the following relationship:

[0070]

[0071] In formula (1), L s for Figure 3 Shown L s,1 , L s,2 and L s,CE sum.

[0072] i C It can be calculated by formula (2):

[0073]

[0074] In formula (2), t is t sc The time is the starting time, and the i calculated by formula (2) C That is, the first transient current of the IGBT device.

[0075] Step 30: In response to the working state being the active region, a second transient current of the IGBT device is determined according to a control relationship between a gate-emitter voltage and a collector current.

[0076] In some optional aspects of this embodiment, before determining the second transient current of the IGBT device according to the control relationship between the gate-emitter voltage and the collector current, the transient current determination method further includes:

[0077] Step A1, determine the rate of change of the collector-emitter voltage.

[0078] In some optional aspects of this embodiment, step A1 includes:

[0079] The change rate of the collector-emitter voltage is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, the parasitic inductance of the IGBT device package, and the second change rate of the collector current.

[0080] Specifically, in this application, Figure 5 At t1, the collector current i of the IGBT C The saturation current value of the output characteristic is reached. After time t1, the IGBT exits the saturation region and enters the active region.

[0081] Among them, the main circuit satisfies the following relationship:

[0082]

[0083] Through formula (3), we can get:

[0084]

[0085] Step A2: determining the gate-emitter voltage according to the control relationship between the collector-emitter voltage and the gate-emitter voltage and the rate of change of the collector-emitter voltage.

[0086] Specifically, the control relationship between the gate voltage and the collector current is:

[0087]

[0088] Where w is the gate channel width, μ n is the channel electron mobility, C ox is the channel capacitance per unit area, l is the gate channel length, α pnp is the internal PNP transistor magnification of the IGBT, U T is the gate threshold voltage.

[0089] Specifically, the relationship between the collector-emitter voltage and the gate-emitter voltage is:

[0090]

[0091] Formula (6) can be transformed into a first-order differential equation in the following form:

[0092]

[0093] In this embodiment, considering the time t=t1, u GE =U G,on , the solution of formula (7) is:

[0094]

[0095] Furthermore, substituting equations (4) and (8) into equation (5), we can obtain:

[0096]

[0097] At this point, combined with the above analysis, the collector current satisfies the following relationship: 1) t sc 1) During the period from t1 to t2, equation (9) is the second transient current of the IGBT device. Figure 6 This is a schematic diagram of the IGBT chip structure. CG is the capacitance set between the collector and the gate; C CE is the capacitance set between the collector and the emitter; C GE It is the capacitance set between the gate and the emitter.

[0098] The embodiment of the present invention provides a method for determining transient current of an IGBT device. After a type II short circuit occurs in the IGBT device, the state of the collector current and the collector-emitter voltage can be grasped, which has certain guiding significance for IGBT state detection.

[0099] The embodiment of the present invention also provides a transient current determination device for an IGBT device, as described in the following embodiment. Since the principle of solving the problem by the device is similar to that of the transient current determination method for an IGBT device, the implementation of the device can refer to the implementation of the transient current determination method for an IGBT device, and the repeated parts will not be repeated.

[0100] like Figure 7 As shown, the transient current determination device for an IGBT device comprises:

[0101] The working state determination module 701 is configured to determine the working state of the IGBT device in response to determining that the second type short circuit occurs in the IGBT device, wherein the working state includes a saturation region and an active region;

[0102] A first transient current determination module 702 is configured to determine a first change rate of the collector current of the IGBT device in response to the working state being the saturation region, and determine a first transient current of the IGBT device according to the first change rate of the collector current;

[0103] The second transient current determination module 703 is configured to determine the second transient current of the IGBT device according to the control relationship between the gate-emitter voltage and the collector current in response to the working state being the active region.

[0104] In some optional aspects of this embodiment, the working state determination module includes a short circuit determination unit, and the short circuit determination unit is configured to:

[0105] Determining whether the IGBT device is turned on;

[0106] In response to determining that the IGBT device is turned on, determining whether a short circuit is formed between a first preset node and a second preset node of a half-bridge circuit;

[0107] In response to determining that the first preset node and the second preset node are short-circuited, it is determined that a second type short circuit occurs in the IGBT device.

[0108] In some optional aspects of this embodiment, the working state determination module includes a working state determination unit, and the working state determination unit is configured to:

[0109] Obtaining an output characteristic curve of the IGBT device;

[0110] Determining the relationship between collector current and collector-emitter voltage according to the output characteristic curve;

[0111] In response to the collector current linearly increasing with the increase of the collector-emitter voltage, determining that the operating state is the saturation region;

[0112] In response to the collector current not increasing linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

[0113] In some optional aspects of this embodiment, the first transient current determination module includes a first change rate determination unit for the collector current, and the first change rate determination unit for the collector current is configured as follows:

[0114] The first change rate of the collector current is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, and the parasitic inductance of the IGBT device package.

[0115] In some optional aspects of this embodiment, the transient current determining device further includes a gate-emitter voltage determining module, including:

[0116] a collector-emitter voltage change rate determining unit, configured to determine the collector-emitter voltage change rate before determining the second transient current of the IGBT device according to the control relationship between the gate-emitter voltage and the collector current;

[0117] The gate-emitter voltage determination unit is configured to determine the gate-emitter voltage according to a control relationship between the collector-emitter voltage and the gate-emitter voltage and a change rate of the collector-emitter voltage.

[0118] In some optional aspects of this embodiment, the collector-emitter voltage change rate determining unit is further configured as follows:

[0119] The change rate of the collector-emitter voltage is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, the parasitic inductance of the IGBT device package, and the second change rate of the collector current.

[0120] It should be noted that the method and device for determining the transient current of an IGBT device provided in the embodiment of the present invention can be used in the field of power electronics, and can also be used in any technical field other than the field of power electronics. The embodiment of the present invention does not limit the application field of the method and device for determining the transient current of an IGBT device.

[0121] According to an embodiment of the present application, the present application also provides an electronic device, a readable storage medium and a computer program product.

[0122] An electronic device comprises: at least one processor; and a memory connected to the at least one processor in communication; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the steps of a transient current determination method for an IGBT device of the aforementioned embodiment.

[0123] A non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to cause a computer to execute the steps of a transient current determination method for an IGBT device of the aforementioned embodiment.

[0124] A computer program product comprises a computer program / instruction, wherein when the computer program / instruction is executed by a processor, the steps of a method for determining a transient current of an IGBT device according to the above-mentioned embodiment are implemented.

[0125] Figure 8A schematic block diagram of an example electronic device 900 that can be used to implement an embodiment of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or required herein.

[0126] like Figure 8 As shown, the device 900 includes a computing unit 901, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 902 or a computer program loaded from a storage unit 908 into a random access memory (RAM) 903. In the RAM 903, various programs and data required for the operation of the device 900 can also be stored. The computing unit 901, the ROM 902, and the RAM 903 are connected to each other via a bus 904. An input / output (I / O) interface 905 is also connected to the bus 904.

[0127] A number of components in the device 900 are connected to the I / O interface 905, including: an input unit 906, such as a keyboard, a mouse, etc.; an output unit 907, such as various types of displays, speakers, etc.; a storage unit 908, such as a disk, an optical disk, etc.; and a communication unit 909, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 909 allows the device 900 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0128] The computing unit 901 may be a variety of general and / or dedicated processing components with processing and computing capabilities. Some examples of the computing unit 901 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The computing unit 901 performs the various methods and processes described above, such as a transient current determination method for an IGBT device.

[0129] For example, in some embodiments, a method for determining a transient current of an IGBT device may be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as a storage unit 908. In some embodiments, part or all of the computer program may be loaded and / or installed on the device 900 via the ROM 902 and / or the communication unit 909. When the computer program is loaded into the RAM 903 and executed by the computing unit 901, one or more steps of the method for determining a transient current of an IGBT device described above may be performed. Alternatively, in other embodiments, the computing unit 901 may be configured to perform a method for determining a transient current of an IGBT device in any other appropriate manner (e.g., by means of firmware).

[0130] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0131] The program code for implementing the method of the present disclosure may be written in any combination of one or more programming languages. These program codes may be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, enables the functions / operations specified in the flow chart and / or block diagram to be implemented. The program code may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0132] In the context of the present disclosure, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0133] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0134] The systems and techniques described herein may be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0135] A computer system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The relationship of client and server is generated by computer programs running on respective computers and having a client-server relationship with each other. The server may be a cloud server, a server of a distributed system, or a server combined with a blockchain.

[0136] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps recorded in this disclosure can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of this disclosure can be achieved, and this document is not limited here.

[0137] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for determining transient current of an IGBT device, characterized in that: include: In response to determining that a second type short circuit occurs in the IGBT device, determining a working state of the IGBT device, wherein the working state includes a saturation region and an active region; In response to the working state being the saturation region, determining a first change rate of the collector current of the IGBT device, and determining a first transient current of the IGBT device according to the first change rate of the collector current; In response to the working state being the active region, a second transient current of the IGBT device is determined according to a control relationship between a gate-emitter voltage and a collector current.

2. The method for determining transient current according to claim 1, characterized in that: The step of determining that the IGBT device has a second type of short circuit comprises: Determining whether the IGBT device is turned on; In response to determining that the IGBT device is turned on, determining whether a short circuit is formed between a first preset node and a second preset node of a half-bridge circuit; In response to determining that the first preset node and the second preset node are short-circuited, it is determined that a second type short circuit occurs in the IGBT device.

3. The method for determining transient current according to claim 1, characterized in that: The step of determining the working state of the IGBT device comprises: Obtaining an output characteristic curve of the IGBT device; Determining the relationship between collector current and collector-emitter voltage according to the output characteristic curve; In response to the collector current linearly increasing with the increase of the collector-emitter voltage, determining that the operating state is the saturation region; In response to the collector current not increasing linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

4. The method for determining transient current according to claim 1, characterized in that: Determining a first rate of change of the collector current of the IGBT device comprises: The first change rate of the collector current is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, and the parasitic inductance of the IGBT device package.

5. The method for determining transient current according to claim 1, characterized in that: Before determining the second transient current of the IGBT device according to the control relationship between the gate-emitter voltage and the collector current, the transient current determination method further includes: Determine the rate of change of collector-emitter voltage; The gate-emitter voltage is determined according to a control relationship between the collector-emitter voltage and the gate-emitter voltage and a change rate of the collector-emitter voltage.

6. The method according to claim 5, characterized in that The determining the rate of change of the collector-emitter voltage comprises: The change rate of the collector-emitter voltage is determined according to the DC bus voltage, the parasitic inductance value of the first loop, the parasitic inductance value of the second loop, the parasitic inductance of the IGBT device package, and the second change rate of the collector current.

7. A transient current determination device for an IGBT device, characterized in that: include: A working state determination module, configured to determine a working state of the IGBT device in response to determining that a second type short circuit occurs in the IGBT device, wherein the working state includes a saturation region and an active region; a first transient current determination module, configured to determine a first change rate of the collector current of the IGBT device in response to the working state being the saturation region, and determine a first transient current of the IGBT device according to the first change rate of the collector current; The second transient current determination module is configured to determine a second transient current of the IGBT device in response to the working state being the active region and according to a control relationship between a gate-emitter voltage and a collector current.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the method for determining transient current of an IGBT device according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of a method for determining a transient current of an IGBT device according to any one of claims 1 to 6 are implemented.

10. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the steps of a method for determining a transient current of an IGBT device according to any one of claims 1 to 6 are implemented.

Images