RF front-end module heat dissipation optimization method, system and related equipment

Abstract

The present invention relates to a method, system, and related equipment for optimizing heat dissipation of a radio frequency front-end module. The method comprises: obtaining the layout of a power amplifier in the radio frequency front-end module; continuously dividing the layout into multiple temperature zones according to the thermal performance of the power amplifier; obtaining the original spacing between transistors in the power amplifier; re-obtaining the optimized spacing of transistors between transistors in different temperature zones according to the original spacing; re-layouting the transistors of the power amplifier according to the optimized spacing of transistors to obtain an optimized layout; and obtaining an optimized heat dissipation optimized radio frequency front-end module according to the optimized layout. The present invention adjusts the layout of transistors in the power amplifier so that the spacing between transistors that generate more heat is increased, thereby improving the radio frequency performance of the radio frequency front-end module.

Description

Technical Field

[0001] The present invention is applicable to the field of radio frequency chip design technology, and in particular relates to a radio frequency front-end module heat dissipation optimization method, system and related equipment. Background Art

[0002] The existing mobile phone RF front-end module structure is as follows Figure 1 As shown in the figure, the RF front-end module generally includes a low-noise amplifier (LNA), a power amplifier (PA), a filter, a switch, an antenna and other components. Among them, the power amplifier is a very important module of the RF front-end, which is used to amplify the output signal, and finally the antenna sends the amplified signal.

[0003] Due to the rapid development of science and technology, the wireless communication technology of smart devices is also rapidly iterating. For 5G wireless communication systems, the key module of its RF front-end module is the RF power amplifier (RF Power Amplifier) ​​located at the end stage of the transmitter. The RF power amplifier directly affects and determines the output power, efficiency, gain, linearity, operating bandwidth, reflection coefficient and other performance indicators of the transmitter system, thereby affecting and determining various performance indicators of the entire 5G wireless communication system. To achieve fast data transmission, 5G communication signals have a higher frequency. Since the speed of light is equal to the wavelength multiplied by the frequency, the wavelength of 5G signals is much smaller than that of 4G and 3G signals. Therefore, if 5G signals want to cover a larger area, more base stations for transmitting and receiving 5G signals are needed, or the transmission power of 5G signals is increased to maintain a longer transmission distance.

[0004] However, for highly integrated mobile phone RF front-end modules, higher transmit power from the power amplifier means greater power consumption. This higher current objectively leads to greater heat generation within the RF front-end module. Excessive temperatures can significantly negatively impact the performance of the module's components and integrated chips. With the ongoing development of technology, the development of high-output power modules and chips is imperative, making heat dissipation optimization a key challenge in chip development. Summary of the Invention

[0005] The present invention provides a method, system and related equipment for optimizing heat dissipation of a radio frequency front-end module, aiming to solve the heating problem of a power amplifier in an existing radio frequency front-end module at high power.

[0006] To solve the above technical problems, in a first aspect, the present invention provides a method for optimizing heat dissipation of a radio frequency front-end module, the method comprising the following steps:

[0007] S101. Obtaining a layout of a power amplifier in a radio frequency front-end module;

[0008] S102, continuously dividing the layout into a plurality of temperature zones according to the thermal performance of the power amplifier;

[0009] S103, obtaining the original spacing between transistors in the power amplifier;

[0010] S104, re-obtaining the optimized transistor spacing between transistors in each of the different temperature zones according to the original spacing;

[0011] S105, rearranging the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout;

[0012] S106. Obtain an optimized heat dissipation-optimized RF front-end module according to the optimized layout.

[0013] Furthermore, in step S102, based on the thermal performance of the power amplifier, the layout is divided into a high-temperature area and two low-temperature areas on both sides of the high-temperature area.

[0014] Furthermore, the high-temperature area is divided with the transistor with the highest temperature in the layout as the center.

[0015] Furthermore, in step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between the transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between the transistors in the high temperature region is reacquired, d2>d0.

[0016] Furthermore, the number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, where w ≥ 3. Then, in step S104:

[0017] Obtain the total length of the spacing reduced in the low-temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total length of the spacing increased in the high-temperature region;

[0018] Obtaining an increased basic spacing l2 between adjacent transistors in the high temperature region = l1 / ((w - 1) × w);

[0019] The transistor with the highest temperature in the high-temperature region is determined, and the spacings between adjacent transistors from the transistor to the outermost transistor in the high-temperature region are: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

[0020] Furthermore, in step S102, based on the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature region is divided for each of the working areas.

[0021] Furthermore, after step S105, the RF front-end module heat dissipation optimization method further includes:

[0022] According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of the different transistors are bonded to each other and are uniformly grounded.

[0023] In a second aspect, the present invention further provides a radio frequency front-end module heat dissipation optimization system, comprising:

[0024] A layout acquisition module, used to obtain the layout of the power amplifier in the RF front-end module;

[0025] a partitioning module, configured to continuously divide the layout into a plurality of temperature zones according to the thermal performance of the power amplifier;

[0026] a spacing analysis module, configured to obtain an original spacing between transistors in the power amplifier;

[0027] a layout optimization module, configured to re-obtain an optimized spacing between transistors in each of the different temperature zones based on the original spacing;

[0028] a re-layout module, configured to re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout;

[0029] The module optimization module is used to obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0030] Furthermore, the division module divides the layout into a high-temperature area and two low-temperature areas on both sides of the high-temperature area based on the thermal performance of the power amplifier;

[0031] According to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature zone is divided for each of the working areas.

[0032] In a third aspect, the present invention also provides a computer device comprising: a memory, a processor, and a RF front-end module heat dissipation optimization program stored in the memory and runnable on the processor, wherein the processor implements the steps in the RF front-end module heat dissipation optimization method as described in any one of the above embodiments when executing the RF front-end module heat dissipation optimization program.

[0033] In a fourth aspect, the present invention also provides a computer-readable storage medium, on which a RF front-end module heat dissipation optimization program is stored. When the RF front-end module heat dissipation optimization program is executed by a processor, the steps in the RF front-end module heat dissipation optimization method as described in any one of the above embodiments are implemented.

[0034] The beneficial effect achieved by the present invention is that a method for optimizing the heat dissipation of an RF front-end module for transistor layout is proposed. This method analyzes the thermal performance of the power amplifier in the module to determine the heat-generating area, and adjusts the layout of the transistors in the power amplifier to expand the spacing between transistors with larger heat generation, and makes the temperature performance of transistors in different areas of the power amplifier's final stage tend to be balanced, thereby reducing the heat generation of the RF front-end module and improving the RF performance of the RF front-end module. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a structural diagram of a mobile phone radio frequency front-end module in the prior art;

[0036] Figure 2 This is a flowchart of the steps of the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention;

[0037] Figure 3 Schematic diagram of the multi-stage power amplifier structure of the RF front-end module in the RF front-end module heat dissipation optimization method provided by an embodiment of the present invention;

[0038] Figure 4 This is a schematic diagram of the layout of the original power amplifier in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention;

[0039] Figure 5 Schematic diagram of the original power amplifier transistor spacing in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention;

[0040] Figure 6 2. It is a schematic diagram of thermal performance analysis of the original power amplifier in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention;

[0041] Figure 7 Schematic diagram of heat dissipation optimization of power amplifier transistor spacing in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention;

[0042] Figure 8 This is a schematic diagram of the layout of a heat dissipation optimized power amplifier in the heat dissipation optimization method for a radio frequency front-end module provided by an embodiment of the present invention;

[0043] Figure 9Schematic diagram of thermal performance analysis of a heat dissipation-optimized power amplifier in a heat dissipation optimization method for a radio frequency front-end module provided by an embodiment of the present invention;

[0044] Figure 10 1 is a schematic structural diagram of a radio frequency front-end module heat dissipation optimization system provided by an embodiment of the present invention;

[0045] Figure 11 It is a structural diagram of a computer device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0046] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0047] Please refer to Figure 2 , Figure 2 : This is a flowchart of the steps of the RF front-end module heat dissipation optimization method provided by an embodiment of the present invention, and the RF front-end module heat dissipation optimization method includes the following steps:

[0048] S101. Obtain the layout of the power amplifier in the radio frequency front-end module.

[0049] In the related art, the power amplifier of the RF front-end module is a multi-stage connected structure. For example, in the RF front-end module used for 5G signal transmission, it generally has a two-stage or three-stage amplification structure, such as Figure 3 As shown, in general, in a multi-stage amplification structure, the front stage is the driver stage, which is used to amplify the small signal at the input end to a sufficiently large amplitude so as to be able to drive the power stage; the final stage is the power stage, which is used to further amplify the signal provided by the driver stage to generate sufficient power to drive the load (such as transmitting the 5G signal through the output end). In a multi-stage amplification structure, the transistors of the power stage amplifier are more numerous and consume more power than those in other structures, and therefore generate more heat. Therefore, for the entire RF front-end module, the power level of the power amplifier has the greatest impact on its performance, and its heat dissipation optimization is the most critical. In the embodiment of the present invention, the heat dissipation optimization of the power amplifier final stage is used as an example to illustrate.

[0050] The layout in the embodiment of the present invention specifically refers to the substrate layout of the power amplifier. An original power amplifier layout that has not been optimized by the RF front-end module heat dissipation optimization method provided by the embodiment of the present invention is as follows: Figure 4 As shown, the power amplifier substrate can be mainly divided into the structure of substrate welding metal, chip pins and chip outer frame. Due to the common application structure of power amplifiers, the transistors therein are generally connected in parallel. When the transistors are welded to the substrate, there will be a certain distance between them.

[0051] Figure 5 The spacing between transistors in a power amplifier is shown in abstract form, where Figure 5 Middle A is a layout in which transistors are arranged closely together. In this layout, there is not enough space between the transistors to dissipate the heat generated by them, which causes the heat to accumulate easily, thus affecting performance. Figure 5 In the B layout, each transistor is arranged at the same pitch, and its actual layout is closer to Figure 4 The layout shown is compared to Figure 5 In the A method, the transistor has a certain space to dissipate heat. Figure 5 The transistor layout is shown in the figure. For different transistors, their size, power, and heat generation will also be different. Objectively speaking, larger transistors will generate more heat than smaller transistors. Therefore, Figure 5 The transistor layout shown also creates a problem of heat accumulation in some locations.

[0052] S102: Continuously divide the layout into multiple temperature zones according to the thermal performance of the power amplifier.

[0053] In the embodiment of the present invention, the temperature region division is mainly performed by performing thermal performance analysis on the power amplifier. For details, please refer to Figure 6 , Figure 6 The embodiment of the present invention provides Figure 4 The schematic diagram of the thermal performance analysis results of the layout shown in the figure is as follows, Figure 6 The overall shape is two waves, which correspond to the front end and the back end of the final amplifier respectively. Different peaks correspond to the heating conditions of different transistors. Taking the wave shape on the left as an example, it can be seen that some transistors in its layout generate more heat than other transistors. Combining the wave shapes on the left and right sides, under high power, the highest temperature of the transistor on the left side of the final stage has reached 120°, and the lowest temperature of the transistor on the left side of the final stage is 100°; the highest temperature of the transistor on the right side of the final stage has reached 110°, and the lowest temperature of the transistor on the left side of the final stage is 90°; the temperature distribution of the transistors on the left and right sides is uneven, which indirectly leads to uneven power distribution of the transistors on the same side. Therefore, Figure 4 The power amplifier layout shown in the figure causes some transistors to operate in the amplification region and some in the saturation region. Transistors operating in the saturation region have poor performance, which will lead to overall performance degradation. At the same time, there is thermal imbalance between the front and rear ends of the power amplifier. The average temperature of the transistors on the left side of the final stage is about 10° higher than that on the right side, which will lead to inconsistent power levels on the left and right sides. In a differential structure, if the power levels on the left and right sides are different, the performance will be correspondingly deteriorated when the power is combined. The greater the difference, the greater the degree of degradation.

[0054] In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high temperature region and two low temperature regions on both sides of the high temperature region. The high temperature region is divided around the transistor with the highest temperature in the layout.

[0055] Please combine Figure 6 , Figure 6 The peak in the graph represents the heating condition of a certain transistor. According to the thermal performance analysis, it is clear that the heat generation in the power amplifier is centered on a certain transistor and gradually decreases outward. In the embodiment of the present invention, the transistor with the highest temperature in the layout is taken as the center, and a certain number of transistors around it are taken to form a high-temperature area. Correspondingly, the positions on both sides of the high-temperature area are used as low-temperature areas.

[0056] S103: Obtain the original spacing between transistors in the power amplifier.

[0057] In the embodiment of the present invention, Figure 4 、 Figure 5 The original spacing is obtained by using the local layout of B in the figure.

[0058] S104 , reacquiring an optimized transistor spacing between transistors in each of the different temperature zones based on the original spacing.

[0059] In step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between the transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between the transistors in the high temperature region is reacquired, d2>d0.

[0060] The main purpose of optimizing heat dissipation in the final stage of a power amplifier in this embodiment of the present invention is to analyze the heat generation areas, increase the spacing between transistors in higher temperature areas, and decrease the spacing between transistors in lower temperature areas. Increasing the spacing between transistors optimizes the heat dissipation performance of transistors with high heat generation, while decreasing the spacing between transistors maintains the original layout size. Therefore, in the process of achieving heat dissipation optimization, it is necessary to control the degree of spacing increase and decrease.

[0061] For details, please refer to Figure 7 In the embodiment of the present invention, the number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, where w ≥ 3. Then, in step S104:

[0062] Obtain the total length of the spacing reduced in the low-temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total length of the spacing increased in the high-temperature region;

[0063] Obtaining an increased basic spacing l2 between adjacent transistors in the high temperature region = l1 / ((w - 1) × w);

[0064] The transistor with the highest temperature in the high-temperature region is determined, and the second transistor optimized spacings d2 of adjacent transistors from the transistor to the outermost transistor of the high-temperature region are respectively: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

[0065] For example, taking the layout as an example, there are 12 transistors in total. After the temperature zone division is completed, the high-temperature zone contains 3 transistors and the low-temperature zone contains a total of 9 transistors. Assuming that the original spacing of each transistor is 6um, the total spacing of the original low-temperature zone is (9 - 2) × 6 = 42um; if d1 = 3um, the total length of the high-temperature zone spacing can be increased by l1 = (9 -2) × (6 - 3) = 21um; the number of transistors in the high-temperature zone is 3, and the spacing that needs to be adjusted is 4. According to the method in the above embodiment, the basic spacing l2 = 3.5um, the spacing between the highest temperature transistor and the second highest temperature transistor is adjusted to 2 × 3.5 + 6 = 13um, and similarly, the spacing between the second highest temperature transistor and the transistor at the boundary of the low-temperature zone is adjusted to 1 × 3.5 + 6 = 9.5um. Through the above method, the spacing between the transistors in the low-temperature zone is reduced, and the spacing between the transistors in the high-temperature zone is correspondingly expanded according to the heat generation, but the size of the overall layout remains unchanged.

[0066] S105 , rearranging the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout.

[0067] The RF front-end module heat dissipation optimization method further includes:

[0068] According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of the different transistors are bonded to each other and are uniformly grounded.

[0069] S106. Obtain an optimized heat dissipation-optimized RF front-end module according to the optimized layout.

[0070] In step S102 , based on the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and each of the working areas is divided into the temperature zones.

[0071] As mentioned above, Figure 4 The thermal performance analysis diagram shown in the figure is generally shaped like two waves, corresponding to the front-end and back-end of the final power amplifier (i.e., the two working areas). The method in the embodiment of the present invention optimizes the situation where the front-end generates significantly more heat than the back-end. It is understood that when there is a significant gap in thermal performance between the front-end and back-end of the power amplifier, in order to better balance the thermal performance of the front-end and back-end of the power amplifier, the method in the embodiment of the present invention can also be used to optimize the front-end and back-end of the power amplifier separately.

[0072] For example, corresponding Figure 4 The layout shown in the figure is optimized for heat dissipation. Figure 8 As shown, Figure 8 The results of thermal performance analysis of the layout shown are as follows Figure 9 As shown, compared with the original layout, the spacing between transistors at the highest temperature position is increased; in order to further optimize the heat dissipation effect, the substrate grounding of different transistors is changed to a large area of ​​metal to ground, so that the welding metal between different transistors has a heat transfer effect. Combined with the results of the thermal performance analysis, it can be seen that when the final module works at high power, the temperature has dropped significantly, with the highest temperature being 80°, which is 40° lower than before. In addition, the temperature on both sides of the front and back ends is very balanced, with a difference of less than 2°, while the previous difference was 10°; the temperature difference of all transistors on a single side is very small, within 5°, while the previous difference was 20°, proving that the RF front-end module heat dissipation optimization method provided by the embodiment of the present invention has a good technical effect.

[0073] The beneficial effect achieved by the present invention is that a method for optimizing the heat dissipation of an RF front-end module for transistor layout is proposed. This method analyzes the thermal performance of the power amplifier in the module to determine the heat-generating area, and adjusts the layout of the transistors in the power amplifier to expand the spacing between transistors with larger heat generation, and makes the temperature performance of transistors in different areas of the power amplifier's final stage tend to be balanced, thereby reducing the heat generation of the RF front-end module and improving the RF performance of the RF front-end module.

[0074] The embodiment of the present invention also provides a radio frequency front-end module heat dissipation optimization system 200, please refer to Figure 10 , Figure 10 200 is a schematic structural diagram of a radio frequency front-end module heat dissipation optimization system provided in an embodiment of the present invention. The radio frequency front-end module heat dissipation optimization system 200 includes:

[0075] A layout acquisition module 201 is used to acquire the layout of the power amplifier in the RF front-end module;

[0076] A division module 202 is configured to continuously divide the layout into a plurality of temperature zones according to the thermal performance of the power amplifier;

[0077] a spacing analysis module 203, configured to obtain an original spacing between transistors in the power amplifier;

[0078] A layout optimization module 204 is configured to re-obtain an optimized spacing between transistors in each of the different temperature zones based on the original spacing;

[0079] a re-layout module 205 for re-layouting the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout;

[0080] The module optimization module 206 is used to obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0081] The division module 202 divides the layout into a high-temperature region and two low-temperature regions on both sides of the high-temperature region based on the thermal performance of the power amplifier;

[0082] According to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature zone is divided for each of the working areas.

[0083] The RF front-end module heat dissipation optimization system 200 can implement the steps in the RF front-end module heat dissipation optimization method in the above embodiment, and can achieve the same technical effects. Please refer to the description in the above embodiment and will not repeat it here.

[0084] The embodiment of the present invention also provides a computer device, please refer to Figure 11 , Figure 11 It is a structural diagram of a computer device provided in an embodiment of the present invention. The computer device 300 includes: a memory 302, a processor 301, and a radio frequency front-end module heat dissipation optimization program stored in the memory 302 and capable of running on the processor 301.

[0085] The processor 301 calls the RF front-end module heat dissipation optimization program stored in the memory 302 to execute the steps of the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention. Figure 2 , specifically including the following steps:

[0086] S101. Obtain the layout of the power amplifier in the radio frequency front-end module.

[0087] S102: Continuously divide the layout into multiple temperature zones according to the thermal performance of the power amplifier.

[0088] In step S102 , based on the thermal performance of the power amplifier, the layout is divided into a high-temperature region and two low-temperature regions located on both sides of the high-temperature region.

[0089] The high temperature area is divided with the transistor with the highest temperature in the layout as the center.

[0090] S103: Obtain the original spacing between transistors in the power amplifier.

[0091] S104 , reacquiring an optimized transistor spacing between transistors in each of the different temperature zones based on the original spacing.

[0092] In step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between the transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between the transistors in the high temperature region is reacquired, d2>d0.

[0093] The number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, where w ≥ 3. Then, in step S104:

[0094] Obtain the total length of the spacing reduced in the low-temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total length of the spacing increased in the high-temperature region;

[0095] Obtaining an increased basic spacing l2 between adjacent transistors in the high temperature region = l1 / ((w - 1) × w);

[0096] The transistor with the highest temperature in the high-temperature region is determined, and the spacings between adjacent transistors from the transistor to the outermost transistor in the high-temperature region are: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

[0097] S105 , rearranging the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout.

[0098] The RF front-end module heat dissipation optimization method further includes:

[0099] According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of the different transistors are bonded to each other and are uniformly grounded.

[0100] S106. Obtain an optimized heat dissipation-optimized RF front-end module according to the optimized layout.

[0101] In step S102 , based on the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and each of the working areas is divided into the temperature zones.

[0102] The computer device 300 provided in the embodiment of the present invention can implement the steps in the method in the above embodiment and can achieve the same technical effects. Please refer to the description in the above embodiment and will not be repeated here.

[0103] An embodiment of the present invention also provides a computer-readable storage medium, which stores a radio frequency front-end module heat dissipation optimization program. When the radio frequency front-end module heat dissipation optimization program is executed by a processor, it implements the various processes and steps in the method provided in the embodiment of the present invention and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0104] Those skilled in the art will appreciate that all or part of the processes in the above-described method embodiments can be implemented by using an RF front-end module heat dissipation optimization program to instruct related hardware (such as a mobile phone, computer, server, air conditioner, or network equipment). The program can be stored in a computer-readable storage medium, and when executed, the program can include the processes in the above-described method embodiments. The storage medium can be a magnetic disk, an optical disk, a read-only memory (ROM), or a random access memory (RAM).

[0105] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0106] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only a preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, which are all within the protection of the present invention.

Claims

1. A method for optimizing heat dissipation of a radio frequency front-end module, characterized in that: The RF front-end module heat dissipation optimization method comprises the following steps: S101. Obtaining a layout of a power amplifier in a radio frequency front-end module; S102, continuously dividing the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; S103, obtaining the original spacing between transistors in the power amplifier; S104, re-obtaining the optimized transistor spacing between transistors in each of the different temperature zones according to the original spacing; S105, rearranging the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout; S106, obtaining an optimized heat dissipation optimized RF front-end module according to the optimized layout; In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high-temperature region and two low-temperature regions on both sides of the high-temperature region; the high-temperature region is divided around the transistor with the highest temperature in the layout; In step S104, the original spacing is defined as d0, and when the first optimized spacing d1 between the transistors in the low temperature region is re-acquired, d0>d1; when the spacing between the transistors in the high temperature region is re-acquired, the spacing between adjacent transistors in the high temperature region is made greater than d0; The number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, where w ≥ 3. Then, in step S104: Obtaining the total length of the spacing reduced in the low-temperature region l1 = (m + n - 2) × (d0 - d1), where l1 is equal to the total length of the spacing increased in the high-temperature region; Obtain an increased basic spacing l2 between adjacent transistors in the high temperature region = (4×l1) / ((w+1)×(w+3)); Determine the transistor with the highest temperature in the high-temperature region, and from the transistor to the outermost transistor in the high-temperature region, the spacings between adjacent transistors are: d0+((w+1) / 2-1+1)×12, d0+((w+1) / 2-2+1)×12, ..., d0+((w+1) / 2-(w+1) / 2+1)×12; In step S102, based on the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and each working area is divided into the temperature region; After step S105, the RF front-end module heat dissipation optimization method further includes: According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of the different transistors are bonded to each other and are uniformly grounded.

2. A radio frequency front-end module heat dissipation optimization system, characterized in that: include: A layout acquisition module, used to obtain the layout of the power amplifier in the RF front-end module; a partitioning module, configured to continuously divide the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; a spacing analysis module, configured to obtain an original spacing between transistors in the power amplifier; a layout optimization module, configured to re-obtain an optimized spacing between transistors in each of the different temperature zones based on the original spacing; a re-layout module, configured to re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout; A module optimization module, configured to obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout; The division module is further configured to divide the layout into a high-temperature region and two low-temperature regions on both sides of the high-temperature region based on the thermal performance of the power amplifier; the high-temperature region is divided around the transistor with the highest temperature in the layout; The layout optimization module is further configured to define the original spacing as d0, and when reacquiring the first optimized spacing d1 between the transistors in the low temperature region, make d0 > d1; and when reacquiring the spacing between the transistors in the high temperature region, make the spacing between adjacent transistors in the high temperature region greater than d0; The number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, where w ≥ 3. Then: Obtaining the total length of the spacing reduced in the low-temperature region l1 = (m + n - 2) × (d0 - d1), where l1 is equal to the total length of the spacing increased in the high-temperature region; Obtain an increased basic spacing l2 between adjacent transistors in the high temperature region = (4×l1) / ((w+1)×(w+3)); Determine the transistor with the highest temperature in the high-temperature region, and from the transistor to the outermost transistor in the high-temperature region, the spacings between adjacent transistors are: d0+((w+1) / 2-1+1)×12, d0+((w+1) / 2-2+1)×12, ..., d0+((w+1) / 2-(w+1) / 2+1)×12; The division module is further configured to divide the layout into a plurality of working areas according to the differential structure of the power amplifier based on the thermal performance of the power amplifier, and divide each working area into the temperature zones; The re-layout module is further configured to: According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of the different transistors are bonded to each other and are uniformly grounded.

3. A computer device, characterized in that: include: A memory, a processor, and a radio frequency front-end module heat dissipation optimization program stored in the memory and executable on the processor, wherein the processor implements the steps of the radio frequency front-end module heat dissipation optimization method as claimed in claim 1 when executing the radio frequency front-end module heat dissipation optimization program.

4. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a radio frequency front-end module heat dissipation optimization program, and when the radio frequency front-end module heat dissipation optimization program is executed by the processor, the steps in the radio frequency front-end module heat dissipation optimization method according to claim 1 are implemented.

Images