Capacitor assembly and method of manufacturing a capacitor assembly
By simplifying the structure and fabrication method of thin-film capacitors, the problems of complex structure and high cost of existing capacitor components have been solved, achieving more efficient capacitor component fabrication and extended service life.
Patent Information
- Application Number
- CN202411479736.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-22
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2044-10-22
AI Technical Summary
Existing capacitor components have complex structures, complicated manufacturing processes, and high costs.
The device employs a simple thin-film capacitor structure, comprising a first and second thin-film layer stacked and wound around a capacitor core. The main body of the housing contains leads, and the surface of the housing has a truss structure. The assembly contains a heat dissipation base plate and a busbar assembly. It is sealed with a resin layer and the leads are selectively wave soldered.
It simplifies the structure and manufacturing process of capacitor components, improves the service life and heat dissipation efficiency of capacitor components, enhances structural strength, and reduces manufacturing costs.
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Figure CN119419065B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of capacitor, in particular to a capacitor assembly and a preparation method thereof. BACKGROUND
[0002] The capacitor assembly is one of the indispensable basic elements in electronic circuits, and its importance lies in its ability to store electrical energy and release it when needed. This unique function makes the capacitor assembly play a key role in various electronic devices and systems, which also makes the capacitor assembly be applied to multiple industries and technical fields. Although the existing capacitor assembly can store electrical energy and release it when needed, the process of preparing the existing capacitor assembly is complex and costly. SUMMARY
[0003] One advantage of the present application is to provide a capacitor assembly and a preparation method thereof, wherein the thin film capacitor and the capacitor assembly have a simple structure and a simple preparation process.
[0004] Another advantage of the present application is to provide a capacitor assembly and a preparation method thereof, wherein in order to achieve the above-mentioned advantages, a complex structure or expensive material is not required in the present application. Therefore, the present application successfully and effectively provides a solution, not only provides a simple capacitor assembly and a preparation method thereof, but also increases the practicality and reliability of the capacitor assembly and the preparation method thereof.
[0005] Therefore, in order to achieve the above-mentioned at least one advantage or other advantages and purposes of the present application, the present application provides a thin film capacitor comprising:
[0006] A capacitor structure and a capacitor shell, the capacitor structure comprises a first thin film layer, a second thin film layer and a capacitor core, the first thin film layer comprises a first metal layer and a first film layer, the first film layer is stacked on one side of the first metal layer and connected with the first metal layer, the second thin film layer comprises a second metal layer and a second film layer, the second film layer is stacked on one side of the second metal layer and connected with the second metal layer, the first thin film layer and the second thin film layer are stacked and co-wound on the capacitor core;
[0007] The capacitor shell comprises a shell body and two leads, the two leads are fixedly arranged on the shell body, the shell body has a first hollow space, the capacitor structure is arranged in the first hollow space, the capacitor structure is connected with the inner wall of the shell body, and the two leads are connected with the first thin film layer or the second thin film layer.
[0008] In this way, the first metal layer and the second metal layer have a large area, reducing the occurrence of metal layer failure due to use loss, and increasing the service life of the thin film capacitor.
[0009] According to an embodiment of the present application, the first thin film layer and the second thin film layer are stacked in such a way that the side of the first film layer away from the first metal layer is stacked on the side of the second metal layer away from the second film layer. In this way, conduction between the first thin film layer and the second thin film layer is prevented, thereby preventing short circuit of the thin film capacitor.
[0010] According to an embodiment of the present application, the two lead wires are lead wires with bending portions, and the two lead wires include a positive electrode lead wire and a negative electrode lead wire.
[0011] In this way, compared with the scheme in which the two lead wires do not have bending portions, the bending portions of the two lead wires with bending portions not only offset stress and absorb vibration, but also improve heat dissipation efficiency.
[0012] According to an embodiment of the present application, the surface of the end of the capacitor shell away from the first hollow space is provided with a truss structure, the truss structure includes two truss plates arranged at two ends of the surface, and the two truss plates together form a support surface supporting the capacitor shell. Compared with the scheme without the truss structure, the capacitor shell with the truss structure has a smaller contact area with the plane and the same area of the support surface, and is more suitable for different placement environments.
[0013] According to another aspect of the present application, the present application further provides a capacitor assembly comprising:
[0014] one or more thin film capacitors described above;
[0015] an assembly shell having a second hollow space;
[0016] a resin layer having one or more through spaces matched with the capacitor shell;
[0017] a heat dissipation bottom plate arranged in the second hollow space of the assembly shell, and one side of the heat dissipation bottom plate is provided with a pin slot structure matched with the truss structure, the thin film capacitor is inserted into the through space and connected with the pin slot structure, the resin layer is in contact with the heat dissipation bottom plate, and the resin layer, the thin film capacitor and the heat dissipation bottom plate are arranged in the second hollow space;
[0018] a busbar assembly fixedly connected to the assembly shell and fixedly connected to the two lead wires.
[0019] In this way, compared with the solution without the pin groove structure, the solution with the pin groove structure can make the connection between the thin film capacitor and the heat dissipation base plate more secure, and increase the overall structural strength of the capacitor assembly.
[0020] According to an embodiment of the present application, the busbar assembly comprises a first busbar, a second busbar, an insulating plate and a film layer, the first busbar and the second busbar jointly hold the insulating plate, and the film layer wraps the first busbar, the second busbar and the insulating plate.
[0021] In this way, the insulating plate and the film layer can prevent the first busbar and the second busbar from being conductive, thereby preventing the capacitor assembly from being short-circuited.
[0022] According to an embodiment of the present application, the first busbar and the second busbar each have a hollow hole and a welding hole, the position of the hollow hole on the first busbar corresponds to the position of the welding hole of the second busbar, the position of the welding hole on the first busbar corresponds to the position of the hollow hole of the second busbar, the film layer has a wire passing hole, the position of the wire passing hole corresponds to the positions of the hollow hole and the welding hole, the positive electrode lead is fixedly arranged in the welding hole on the first busbar, and the negative electrode lead is fixedly arranged in the welding hole on the second busbar.
[0023] In this way, during the process of welding the two leads of the thin film capacitor to the first busbar and the second busbar respectively, the leads can be prevented from making the first busbar and the second busbar conductive, thereby preventing the capacitor assembly from being short-circuited.
[0024] According to an embodiment of the present application, the welding hole is a hole with a hollow structure.
[0025] In this way, compared with the welding hole being a common hole, the welding hole being a hole with a hollow structure can reduce the contact area of the busbar with the outside, reduce the heat loss during welding, and thus reduce the welding time, thereby preventing the thin film capacitor from being heated to a high temperature due to the long welding time, and thus preventing the thin film capacitor from being damaged.
[0026] According to another aspect of the present application, the present application further provides a capacitor assembly preparation method for preparing the above-mentioned capacitor assembly, comprising the following steps:
[0027] providing an assembly shell, the assembly shell having a hollow structure;
[0028] placing a metal heat dissipation plate in the assembly shell;
[0029] placing a thin film capacitor on the metal heat dissipation plate;
[0030] injecting liquid resin into the hollow structure in the assembly shell until the resin immerses the capacitor structure of the film capacitor, and standing until the resin solidifies;
[0031] fixing the pre-assembled busbar assembly on the upper end of the opening of the assembly shell, so that the two lead wires of each film capacitor pass through the holes in the busbar assembly;
[0032] welding the positive and negative lead wires of the film capacitor to the first busbar and the second busbar respectively to obtain the capacitor assembly.
[0033] In this way, by injecting the resin, not only the sealing of the film capacitor is completed, but also the resin layer is prepared, which has good heat conduction performance and can help the capacitor assembly to dissipate heat better.
[0034] According to an embodiment of the present application, the process of obtaining the pre-assembled busbar assembly includes the following steps:
[0035] clamping the first busbar and the second busbar together to press together;
[0036] attaching two pieces of insulating adhesive film to the upper and lower surfaces of the first busbar and the second busbar, and hot pressing the insulating adhesive film to perform packaging operation.
[0037] In this way, the film layer wrapping the first busbar, the second busbar and the insulating plate can be prepared, thereby reducing the contact area of the first busbar and the second busbar with the outside, and further reducing the occurrence of the case that the performance of the capacitor assembly is affected by unnecessary factors from the outside.
[0038] The present application provides a capacitor assembly and a capacitor assembly preparation method. Compared with existing film capacitors and capacitor assemblies, the structure of the film capacitor and the capacitor assembly provided by the present application is simpler, and the process of the preparation method for preparing the capacitor assembly is also simpler.
[0039] Specifically, in the film capacitor provided by the present application, the shell body accommodates and protects the capacitor structure and the two lead wires, preventing the film capacitor from being damaged by unnecessary external factors. The capacitor structure is formed by stacking two layers of film after single-sided metallization treatment and co-winding the capacitor core. The two lead wires are connected to the film, and the two lead wires are fixed to the shell body. The two lead wires are respectively the positive and negative lead pins of the capacitor, which lays a foundation for subsequent connection with the busbar assembly when preparing the capacitor assembly. BRIEF DESCRIPTION OF DRAWINGS
[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description only constitute some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without any creative effort.
[0041] Figure 1 A perspective view of a film capacitor provided for an embodiment of the present application is shown.
[0042] Figure 2 A superimposed view of a first film layer and a second film layer according to the above embodiment of the present application is shown.
[0043] Figure 3 A structural view of a capacitor structure according to the above embodiment of the present application is shown.
[0044] Figure 4 A perspective view of a capacitor assembly provided for another embodiment of the present application is shown.
[0045] Figure 5 An exploded view of a capacitor assembly according to the above embodiment of the present application is shown.
[0046] Figure 6 A connection view between a truss structure of a film capacitor and a pin slot structure of a heat dissipation base plate according to the above embodiment of the present application is shown.
[0047] Figure 7 A structural view of a hollow hole and a welding hole of a busbar assembly according to the above embodiment of the present application is shown.
[0048] Figure 8 A flowchart of a capacitor assembly preparation method provided for another embodiment of the present application is shown.
[0049] The accompanying drawings are as follows: 1, capacitor assembly; 10, film capacitor; 11, capacitor structure; 111, first film layer; 1111, first metal layer; 1112, first film layer; 112, second film layer; 1121, second metal layer; 1122, second film layer; 113, capacitor core; 12, capacitor shell; 121, shell body; 122, lead wire; 1221, positive lead wire; 1222, negative lead wire; 123, truss structure; 1231, truss plate; 20, assembly shell; 30, resin layer; 40, heat dissipation base plate; 41, pin slot structure; 50, busbar assembly; 51, first busbar; 52, second busbar; 53, insulating plate; 54, film covering layer; 55, hollow hole; 56, welding hole. DETAILED DESCRIPTION
[0050] In order to make the above objectives, characteristics and advantages of the present application more apparent, a detailed description of the specific embodiments of the present application will be given below with reference to the drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a number of different manners, which are different from those described herein, and it can be apparent that similar modifications can be made by those skilled in the art without departing from the spirit and scope of the present application, and therefore the present application is not limited to the specific embodiments disclosed below.
[0051] It is noted that although the existing capacitor assembly can store and release electric energy when needed, the structure of the existing capacitor assembly is complex, and the process for preparing the existing capacitor assembly is complex and costly. In order to solve this problem, the present application provides a capacitor assembly and a capacitor assembly preparation method, which has a simpler structure than the prior art and a simpler process.
[0052] Specifically, please refer to the accompanying drawings Figures 1 to 3 One embodiment of the present application provides a thin film capacitor 10, which can include a capacitor structure 11 and a capacitor shell 12.
[0053] More specifically, the capacitor structure 11 includes a first thin film layer 111, a second thin film layer 112, and a capacitor core 113. The first thin film layer 111 includes a first metal layer 1111 and a first film layer 1112, the first film layer 1112 is stacked on one side of the first metal layer 1111 and connected to the first metal layer 1111. The second thin film layer 112 includes a second metal layer 1121 and a second film layer 1122, the second film layer 1122 is stacked on one side of the second metal layer 1121 and connected to the second metal layer 1121. The first thin film layer 111 and the second thin film layer 112 are both single-sided metallized thin film layers, and the first thin film layer 111 and the second thin film layer 112 are stacked and co-wound on the capacitor core 113. The capacitor shell 12 includes a shell body 121 and two leads 122, the two leads 122 are fixedly arranged on the shell body 121. The shell body 121 has a first hollow space, the capacitor structure 11 is arranged in the first hollow space of the shell body 121 and connected to the inner wall of the shell body 121, and the two leads 122 are connected to the first thin film layer 111 or the second thin film layer 112.
[0054] It is noted that the first metal layer 1111 and the second metal layer 1121 have a large area, which reduces the occurrence of metal layer failure due to use loss and increases the service life of the thin film capacitor 10.
[0055] Optionally, the two lead wires 122 are lead wires 122 with a bending part, and the two lead wires 122 include a positive lead wire 1221 and a negative lead wire 1222.
[0056] It is worth noting that, as shown in Figure 1 The bending part of the two lead wires 122 not only offsets stress and absorbs vibration, but also improves heat dissipation efficiency.
[0057] In terms of stress offset and vibration absorption: the present scheme disperses the force applied to the structure by setting a curved shape, thereby reducing the stress of a single area, and the bent structure can change the path of the load, so that the stress is more evenly distributed throughout the structure, thereby avoiding overloading of the partial area of the lead wire 122, thereby reducing the risk of damage. Moreover, the bending part can enhance the stability of the structure. For example, the design of the arch bridge utilizes the curved shape to convert the load into compressive stress downward along the curved structure, thereby achieving effective force transmission.
[0058] In terms of improving heat dissipation efficiency: compared with a lead wire 122 without a bending part per unit length, a lead wire 122 with a bending part per unit length has a larger volume, which not only lengthens the heat transfer path of the two lead wires 122, but also increases the heat dissipation area of the two lead wires 122. Thus, the thin film capacitor 10 is prevented from being heated to a too high temperature due to too long welding time, thereby preventing the occurrence of damage to the thin film capacitor 10.
[0059] It is worth noting that, as shown in Figure 1 The surface of the end of the capacitor shell 12 away from the first hollow space is provided with a truss structure 123, the truss structure 123 includes two truss plates 1231 arranged at both ends of the surface, and the two truss plates 1231 together form a support surface supporting the capacitor shell, for stably placing the thin film capacitor 10 on a plane. Compared with the scheme without the truss structure 123, the scheme with the truss structure 123 has a smaller contact area with the plane and the same area of the support surface, and is more suitable for different placement environments.
[0060] It is worth noting that, as shown in Figure 2 The stacking mode of the first thin film layer 111 and the second thin film layer 112 is that one side of the first film layer 1112 away from the first metal layer 1111 is stacked on one side of the second metal layer 1121 away from the second film layer 1122. Such arrangement can prevent conduction between the first thin film layer 111 and the second thin film layer 112, thereby preventing short circuit of the thin film capacitor 10.
[0061] In another embodiment of the present application, the first thin film layer 111 and the second thin film layer 112 are provided with a diaphragm, and the side of the first thin film layer 111 after the metallization process is close to the side of the second thin film layer 112 after the metallization process. Because of the diaphragm, the first thin film layer 111 and the second thin film layer 112 are in conduction, so that the short circuit of the thin film capacitor 10 does not occur.
[0062] It is worth noting that the first metal layer 1111 and the second metal layer 1121 are obtained by metallizing the surface of the first film layer 1112 and the second film layer 1122. The metallization process includes but is not limited to chemical vapor deposition and physical vapor deposition. Specifically, chemical vapor deposition: using gaseous precursor compounds, decomposing the gaseous precursor compounds through chemical reaction at high temperature to deposit metal on the surface of the thin film, and then forming a metal layer; physical vapor deposition: a technology for depositing thin films on the surface of the substrate based on physical processes such as sputtering and evaporation. Sputtering: in a high vacuum environment, using inert gas (such as argon) discharge to form plasma, and then sputtering target metal (such as aluminum) atoms to the surface of the thin film. This method can produce uniform and dense metal layers. Evaporation: by heating the metal source to evaporate, and then depositing metal atoms on the surface of the thin film. This method needs to control the evaporation rate and vacuum degree to ensure the uniformity of the metal layer.
[0063] It is worth noting that, as shown in Figure 2 The first metal layer 1111 and the second metal layer 1121 are not completely staggered to enhance the performance of the thin film capacitor 10.
[0064] In particular, the materials of the first thin film layer 111 and the second thin film layer 112 need to have a high dielectric constant, a glass transition temperature, and a low dielectric loss, such as polyphenylene sulfide (PPS), which is a high-performance engineering thermoplastic material with excellent high-temperature resistance, chemical corrosion resistance and electrical properties. Polyphenylene sulfide is generated by the polymerization of p-phenylthiol, and is often used in industrial environments that require high heat resistance and chemical stability.
[0065] In another embodiment of the present application, a capacitor assembly 1 is also provided, as shown in Figures 4 to 6 The capacitor assembly 1 comprises:
[0066] one or more of the above-mentioned thin film capacitors 10;
[0067] an assembly housing 20, the assembly housing 20 having a second hollow space;
[0068] a resin layer 30 having one or more through spaces matching the capacitor housing 12;
[0069] a heat dissipation base plate 40 disposed in the second hollow space of the assembly housing 20, and one side of the heat dissipation base plate 40 is provided with a pin slot structure 41 matching the truss structure 123, the film capacitor 10 is inserted into the through space and connected with the pin slot structure 41, the resin layer 30 is in contact with the heat dissipation base plate 40, and the resin layer 30, the film capacitor 10 and the heat dissipation base plate 40 are all disposed in the second hollow space;
[0070] a busbar assembly 50 fixedly connected to the assembly housing 20 and fixedly connected to two of the lead wires 122.
[0071] Notably, compared with the scheme without the pin slot structure 41, the scheme with the pin slot structure 41 can make the connection between the film capacitor 10 and the heat dissipation base plate 40 more secure, and increase the overall structural strength of the capacitor assembly 1.
[0072] In particular, the material constituting the resin layer 30 includes but is not limited to materials with good thermal conductivity such as epoxy resin, thermally conductive epoxy resin and thermally conductive plastic, the thermally conductive epoxy resin is prepared by adding thermally conductive fillers (such as aluminum oxide, boron nitride, graphite, etc.) into epoxy resin, and has better thermal conductivity than epoxy resin.
[0073] In particular, the resin layer 30 can not only increase the heat dissipation performance of the capacitor assembly 1 by virtue of the good thermal conductivity of the material constituting the resin layer 30, but also increase the overall structural strength of the capacitor assembly 1 (compared with the capacitor assembly 1 without the resin layer 30).
[0074] Notably, as shown in Figure 5 The busbar assembly 50 includes a first busbar 51, a second busbar 52, an insulating plate 53 and a film layer 54, the first busbar 51 and the second busbar 52 jointly hold the insulating plate 53, and the film layer 54 wraps the first busbar 51, the second busbar 52 and the insulating plate 53. In this way, the insulating plate 53 and the film layer 54 can prevent the first busbar 51 and the second busbar 52 from being conductive, thereby preventing the capacitor assembly 1 from short circuiting.
[0075] Optionally, as shown in Figure 7As shown, the first busbar 51 and the second busbar 52 are both provided with hollow holes 55 and welding holes 56, the positions of the hollow holes 55 on the first busbar 51 correspond to the positions of the welding holes 56 on the second busbar 52, the positions of the welding holes 56 on the first busbar 51 correspond to the positions of the hollow holes 55 on the second busbar 52, the film layer 54 is provided with through holes, the positions of the through holes correspond to the positions of the hollow holes 55 and the welding holes 56, the positive electrode lead 1221 is fixedly arranged on the welding hole 56 on the first busbar 51, and the negative electrode lead 1222 is fixedly arranged on the welding hole 56 on the second busbar 52.
[0076] In particular, as shown in the drawings, Figure 7 the diameters of the hollow holes 55 and the through holes are greater than the diameter of the welding hole 56, so that the leads 122 can not conduct the first busbar 51 and the second busbar 52 during the welding of the two leads 122 of the film capacitor 10 to the first busbar 51 and the second busbar 52, thereby preventing the short circuit of the capacitor assembly 1.
[0077] It is worth noting that the positive electrode lead 1221 is fixedly arranged on the welding hole 56 on the first busbar 51, and the negative electrode lead 1222 is fixedly arranged on the welding hole 56 on the second busbar 52, so that all the positive electrode leads 1221 of the film capacitors 10 are fixedly connected to the first busbar 51, and all the negative electrode leads 1222 are fixedly connected to the second busbar 52, thereby preventing the performance of the capacitor assembly 1 from being affected due to the inconsistent connection of the leads 122.
[0078] Optionally, as shown in the drawings, Figure 7 the welding hole 56 is a hole with a hollow structure.
[0079] It is worth noting that, compared with the ordinary hole, the welding hole 56 is a hole with a hollow structure, which can reduce the contact area of the busbar with the outside world, reduce the heat loss during welding, and thus reduce the welding time, thereby preventing the film capacitor 10 from being heated to a high temperature due to the long welding time, and thus preventing the damage of the film capacitor 10.
[0080] In other embodiments of the present application, as shown in the drawings, Figure 8 a capacitor assembly 1 preparation method is provided for preparing the above-mentioned capacitor assembly 1, comprising the following steps:
[0081] providing an assembly shell 20, the assembly shell 20 has a hollow structure;
[0082] The metal heat sink is placed in the component housing 20;
[0083] The film capacitor 10 is placed on the metal heat sink;
[0084] The liquid resin is injected into the hollow structure in the component housing 20 until the capacitor structure 11 of the film capacitor 10 is immersed in the resin, and the resin is allowed to solidify;
[0085] The pre-assembled busbar assembly 50 is fixed to the open upper end of the component housing 20, and the two lead wires 122 of each film capacitor 10 pass through the holes in the busbar assembly 50;
[0086] The positive lead wire 1221 and the negative lead wire 1222 of the film capacitor 10 are respectively welded to the first busbar 51 and the second busbar 52, and the capacitor assembly 1 is obtained.
[0087] It is worth noting that by injecting the resin, not only is the sealing of the film capacitor 10 completed, but also the resin layer 30 is prepared, which has good heat conduction performance and can help the capacitor assembly 1 to dissipate heat better.
[0088] In particular, in the present embodiment, the welding method of welding the two lead wires 122 of the capacitor to the first busbar 51 and the second busbar 52 respectively is selective wave soldering, which can accurately select a specific area for welding, avoid heat effect and solder contamination on areas that do not need to be welded, thereby reducing the thermal shock to the capacitor assembly 1 and avoiding deformation or damage of each component in the capacitor assembly 1 due to high temperature.
[0089] It is worth noting that the process of obtaining the pre-assembled busbar assembly 50 includes the following steps:
[0090] The first busbar 51 and the second busbar 52 are clamped together to press together;
[0091] Two pieces of insulating adhesive film are attached to the upper and lower surfaces of the first busbar 51 and the second busbar 52, and the insulating adhesive film is hot-pressed to perform packaging operation.
[0092] It is worth noting that in this way, the film layer 54 wrapping the first busbar 51, the second busbar 52 and the insulating plate 53 can be prepared, thereby reducing the contact area of the first busbar 51 and the second busbar 52 with the outside world, and further reducing the occurrence of the case that the performance of the capacitor assembly 1 is affected by unnecessary factors from the outside world.
[0093] In particular, in the present embodiment, the insulating adhesive film is a PI (polyimide) adhesive film, which is a high-performance polymer material with excellent thermal stability, excellent mechanical strength, good electrical insulation performance and strong chemical stability, and is widely used in the fields of electronics, aerospace, automotive industry and composite materials, etc. In other embodiments, the material of the insulating adhesive film includes, but is not limited to, other materials with good thermal stability, good mechanical strength, good electrical insulation performance and strong chemical stability.
[0094] The technical features of the above embodiments can be combined without changing the basic principles of the present application. In order to make the description simple, not all possible combinations of the technical features in the above embodiments are described, but as long as the combinations of the technical features do not contradict, they should be considered as the scope of the present disclosure.
[0095] It should be noted that when a component is referred to as "fixed to" or "disposed on" another component, it can be directly on the other component or there can be a middle component. When a component is referred to as "connected to" another component, it can be directly connected to the other component or there can be a middle component. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used in the specification of the present application are for illustrative purposes only and do not indicate the only implementation.
[0096] In addition, the terms "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.
[0097] In the present application, unless otherwise explicitly specified and limited, the "on", "under", "above" and "over" of the first feature to the second feature can be that the first feature is in direct contact with the second feature, or the first feature is indirectly in contact with the second feature through an intermediate medium. Moreover, the "on", "above" and "over" of the first feature to the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The "under", "below" and "under" of the first feature to the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.
[0098] Unless otherwise defined, all technical and scientific terms used in the application's specification are intended to have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the application's specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The use of the terms "and / or" includes any and all combinations of one or more of the associated listed items.
[0099] The above embodiments only express several embodiments of the present application, which are described in more detail and in more detail, but cannot be understood as limiting the scope of the patent application. It should be noted that for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of protection of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.
Claims
1. A capacitor assembly, characterized by, The capacitor assembly comprises: The thin-film capacitor comprises: The capacitor structure comprises a first thin-film layer, a second thin-film layer, and a capacitor core, the first thin-film layer comprises a first metal layer and a first film layer, the first film layer is stacked on one side of the first metal layer and connected with the first metal layer, the second thin-film layer comprises a second metal layer and a second film layer, the second film layer is stacked on one side of the second metal layer and connected with the second metal layer, and the first thin-film layer and the second thin-film layer are stacked and co-wound on the capacitor core. The capacitor housing comprises a housing main body and two lead wires, the two lead wires are fixedly arranged on the housing main body, the housing main body has a first hollow space, the capacitor structure is arranged in the first hollow space, the capacitor structure is connected with the inner wall of the housing main body, and the two lead wires are connected with the first thin-film layer or the second thin-film layer. The surface of the end of the capacitor housing away from the first hollow space is provided with a truss structure, the truss structure comprises two truss plates arranged at two ends of the surface, and the two truss plates jointly form a supporting surface for supporting the capacitor housing. The assembly housing has a second hollow space. The resin layer has one or more through spaces matched with the capacitor housing. The heat dissipation bottom plate is arranged in the second hollow space of the assembly housing, one side of the heat dissipation bottom plate is provided with a pin slot structure matched with the truss structure of the thin-film capacitor, the thin-film capacitor is inserted into the through space and connected with the pin slot structure, the resin layer is in contact with the heat dissipation bottom plate, and the resin layer, the thin-film capacitor, and the heat dissipation bottom plate are arranged in the second hollow space. The resin layer is obtained by placing the thin-film capacitor on the heat dissipation bottom plate, injecting liquid resin into the hollow structure in the assembly housing until the resin immerses the capacitor structure of the thin-film capacitor, and standing until the resin solidifies. The busbar assembly is fixedly connected to the assembly housing and the two lead wires.
2. The capacitor assembly of claim 1, wherein, The first film layer is stacked on one side of the second metal layer away from the second film layer.
3. The capacitor assembly of claim 1, wherein, The two lead wires are lead wires with bending parts, and the two lead wires comprise a positive electrode lead wire and a negative electrode lead wire.
4. The capacitor assembly of claim 3, wherein, The busbar assembly comprises a first busbar, a second busbar, an insulating plate, and a film layer, the first busbar and the second busbar jointly hold the insulating plate, and the film layer wraps the first busbar, the second busbar, and the insulating plate.
5. The capacitor assembly of claim 4, wherein, The first busbar and the second busbar each have a hollow hole and a welding hole, and the position of the hollow hole on the first busbar corresponds to the position of the welding hole of the second busbar, and the position of the welding hole on the first busbar corresponds to the position of the hollow hole of the second busbar, the film layer has a wire passing hole, the position of the wire passing hole corresponds to the position of the hollow hole and the welding hole, the positive electrode lead of the thin film capacitor is fixed on the welding hole on the first busbar, and the negative electrode lead of the thin film capacitor is fixed on the welding hole on the second busbar.
6. The capacitor assembly of claim 5, wherein, The welding hole is a hole with a hollow structure.
7. A method for manufacturing a capacitor assembly, characterized in that, A method for manufacturing the capacitor assembly of any one of claims 4-6, comprising the steps of: providing an assembly housing having a hollow structure; placing a metal heat sink plate in the assembly housing; placing a thin film capacitor on the heat sink plate; injecting liquid resin into the hollow structure in the assembly housing until the resin immerses the capacitor structure of the thin film capacitor, and standing until the resin solidifies; fixing the pre-assembled busbar assembly to the open upper end of the assembly housing, so that the two leads of each thin film capacitor pass through the holes in the busbar assembly; welding the positive electrode lead and the negative electrode lead of the thin film capacitor to the first busbar and the second busbar respectively to obtain the capacitor assembly.
8. The method for preparing a capacitor assembly according to claim 7, characterized in that, The process of obtaining the pre-assembled busbar assembly, comprising the steps of: clamping the first busbar and the second busbar together to press together; attaching two pieces of insulating adhesive film to the upper and lower surfaces of the first busbar and the second busbar, hot pressing the insulating adhesive film, and performing packaging operation.
Citation Information
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