Three-lamination OLED device and preparation method of RGB pixel device corresponding to three-lamination OLED device

Abstract

The invention discloses a three-lamination OLED device and a preparation method of an RGB pixel device corresponding to the three-lamination OLED device, and relates to the field of OLED micro-display, and the three-lamination OLED device comprises an R light-emitting unit, a G light-emitting unit, a B light-emitting unit, an anode layer and a cathode layer. The R light-emitting unit, the G light-emitting unit and the B light-emitting unit are stacked and combined based on a first preset position to obtain a light-emitting unit layer; the light-emitting unit layer is arranged on the anode layer, and the cathode layer is arranged on the light-emitting unit layer. According to the invention, the development period of the three-lamination device can be obviously reduced.

Description

Technical Field

[0001] The present application relates to the field of OLED micro-display, and in particular to a three-layer OLED device and a method for preparing an RGB pixel device corresponding to the three-layer OLED device. Background Art

[0002] The life of OLED micro display screens is restricted by the life of OLED devices. Currently, most of the industry uses double-stacked white OLED devices. In order to further improve the life of OLED devices, three-stacked or even higher-stacked OLED device structures can be used for OLED micro display screens. The goal of developing three-stacked devices is usually to achieve a CIE close to (0.33, 0.33). Therefore, it is urgent to design a three-stacked OLED device. Summary of the invention

[0003] The purpose of the present application is to provide a three-layer OLED device and a method for preparing an RGB pixel device corresponding to the three-layer OLED device, which can significantly reduce the development cycle of the three-layer device.

[0004] To achieve the above objectives, this application provides the following solutions:

[0005] In a first aspect, the present application provides a three-stack OLED device comprising: an R light-emitting unit, a G light-emitting unit, a B light-emitting unit, an anode layer, and a cathode layer;

[0006] The R light emitting unit, the G light emitting unit and the B light emitting unit are stacked and combined based on a first preset position to obtain a light emitting unit layer;

[0007] The light-emitting unit layer is arranged on the anode layer, and the cathode layer is arranged on the light-emitting unit layer.

[0008] Optionally, the light-emitting unit layer further includes: a first charge generation layer and a second charge generation layer;

[0009] The position of the first charge generation layer and the position of the second charge generation layer are set based on a second preset position.

[0010] Optionally, the anode layer is a metal material or a composite material.

[0011] Optionally, the cathode layer is made of TCO material, ITO material, AZO material or IZO material.

[0012] A method for preparing an RGB pixel device corresponding to a three-layer OLED device includes:

[0013] Obtaining the monochromatic efficiency and pixel area of ​​the R light-emitting unit, the G light-emitting unit, and the B light-emitting unit in the three-layer OLED device;

[0014] The first constant is obtained by multiplying the monochromatic efficiency of the R light emitting unit and the pixel area;

[0015] The second constant is obtained by multiplying the monochromatic efficiency of the G light emitting unit and the pixel area;

[0016] The third constant is obtained by multiplying the monochrome efficiency of the B light emitting unit and the pixel area;

[0017] determining a proportional relationship among the first constant, the second constant, and the third constant;

[0018] The inverse ratio of the proportional relationship is used as the area proportional relationship of the R pixel structure, the G pixel structure, and the B pixel structure;

[0019] manufacturing an R pixel structure, a G pixel structure, and a B pixel structure based on an area ratio relationship among the R pixel structure, the G pixel structure, and the B pixel structure;

[0020] The R pixel structure, the G pixel structure and the B pixel structure are arranged in the anode layer of the three-layer OLED device based on the third preset position.

[0021] According to the specific embodiments provided in this application, this application discloses the following technical effects:

[0022] The present application provides a three-layer OLED device and a method for preparing an RGB pixel device corresponding to the three-layer OLED device, wherein the three-layer is realized by stacking and combining an R light-emitting unit, a G light-emitting unit and a B light-emitting unit to obtain a light-emitting unit layer, and then the light-emitting unit layer is correspondingly arranged with an anode layer and a cathode layer to obtain a three-layer OLED device, thereby reducing the development cycle of the three-layer device. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 A structural diagram of a three-layer OLED device provided in one embodiment of the present application;

[0025] Figure 2 A structural diagram of an RGB pixel device corresponding to a three-layer OLED device provided in one embodiment of the present application;

[0026] Figure 3 A schematic diagram of a combination of a three-layer OLED device and an RGB pixel device corresponding to the three-layer OLED device provided in one embodiment of the present application;

[0027] Figure 4 Another combined schematic diagram of a three-layer OLED device and an RGB pixel device corresponding to the three-layer OLED device provided in one embodiment of the present application.

[0028] Explanation of symbols:

[0029] 1- cathode layer; 2- R light-emitting unit; 3- first charge generating layer; 4- G light-emitting unit; 5- second charge generating layer; 6- B light-emitting unit; 7- anode layer; 8- G pixel structure; 9- R pixel structure; 10- B pixel structure. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0031] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0032] A three-stack OLED device includes: an R light emitting unit 2, a G light emitting unit 4, a B light emitting unit 6, an anode layer 7 and a cathode layer 1.

[0033] The R light emitting unit 2, the G light emitting unit 4 and the B light emitting unit 6 are stacked and combined based on the first preset position to obtain a light emitting unit layer, such as Figure 1 shown.

[0034] The B light emitting unit 6 is a blue light OLED unit, which may be a fluorescent type, a phosphorescent type or a high fluorescent type OLED structure, and is composed of multiple organic functional layers: HIL, HTL, EBL, EML, HBL and ETL.

[0035] The G light emitting unit 4 is a green light OLED unit, which may be a fluorescent type, a phosphorescent type or a high fluorescent type OLED structure, and is composed of multiple organic functional layers: HIL, HTL, EBL, EML, HBL and ETL.

[0036] The R light emitting unit 2 is a red light OLED unit, which may be a fluorescent type, a phosphorescent type or a high fluorescent type OLED structure, and is composed of multiple organic functional layers: HIL, HTL, EBL, EML, HBL and ETL.

[0037] The first preset condition includes multiple situations. Figure 1This is one of the first preset conditions (the B light-emitting unit 6 is arranged below the G light-emitting unit 4, and the G light-emitting unit 4 is arranged below the R light-emitting unit 2). The positions of the R light-emitting unit 2, the G light-emitting unit 4 and the B light-emitting unit 6 can be adjusted accordingly according to actual conditions. This application focuses on protecting the stacking form of the R light-emitting unit 2, the G light-emitting unit 4 and the B light-emitting unit 6.

[0038] The light-emitting unit layer is disposed on the anode layer 7 , and the cathode layer 1 is disposed on the light-emitting unit layer.

[0039] The light emitting unit layer further includes: a first charge generating layer 3 and a second charge generating layer 5 .

[0040] The position of the first charge generation layer 3 and the position of the second charge generation layer 5 are set based on the second preset position, such as Figure 1 shown.

[0041] The first charge generation layer 3 and the second charge generation layer 5 are composite film layers formed by an n-type organic layer and a p-type organic layer, such as ET:ND or HT:PD.

[0042] The second preset position is to respectively arrange the first charge generating layer 3 and the second charge generating layer 5 between two light-emitting units (R light-emitting unit 2, G light-emitting unit 4 and B light-emitting unit 6) to ensure that the two light-emitting units (R light-emitting unit 2, G light-emitting unit 4 and B light-emitting unit 6) are not in direct contact.

[0043] The anode layer 7 is made of metal material or composite material.

[0044] The anode layer 7 can be made of metal materials such as Al, Ti, Ag, TiN, Mo, ITO, etc., as well as a composite layer composed of these materials.

[0045] For example, the anode layer 7 is a composite layer composed of 80 nm Al and 3 nm TiN.

[0046] The cathode layer 1 is made of TCO material, ITO material, AZO material or IZO material.

[0047] For example, the cathode layer 1 is made of 1000nm IZO material.

[0048] like Figure 2 As shown, a method for preparing an RGB pixel device corresponding to a three-layer OLED device includes:

[0049] Obtain the single-color efficiency and pixel area of ​​the R light-emitting unit, the G light-emitting unit, and the B light-emitting unit in the three-layer OLED device.

[0050] The first constant is obtained by multiplying the monochrome efficiency of the R light emitting unit and the pixel area.

[0051] The second constant is obtained by multiplying the monochrome efficiency of the G light emitting unit and the pixel area.

[0052] The third constant is obtained by multiplying the monochrome efficiency of the B light emitting unit and the pixel area.

[0053] A proportional relationship among the first constant, the second constant, and the third constant is determined.

[0054] The inverse ratio of the proportional relationship is taken as the area proportional relationship of the R pixel structure 9 , the G pixel structure 8 , and the B pixel structure 10 .

[0055] The R pixel structure 9 , the G pixel structure 8 , and the B pixel structure 10 are manufactured based on the area ratio relationship among the R pixel structure 9 , the G pixel structure 8 , and the B pixel structure 10 .

[0056] The R pixel structure 9 , the G pixel structure 8 and the B pixel structure 10 are arranged in the anode layer of the three-layer OLED device based on the third preset position.

[0057] The present application also provides an application scenario, which uses the above-mentioned method for preparing an RGB pixel device corresponding to the three-layer OLED device. Specifically:

[0058] For example, the R pixel structure 9 and the G pixel structure 8 adopt phosphorescent OLED technology, and the B pixel structure 10 adopts fluorescent OLED technology. Since the EQE efficiency ratio of RGB (the proportional relationship between the first constant, the second constant and the third constant) is approximately 4:4:1, the area ratio relationship among the R pixel structure 9, the G pixel structure 8 and the B pixel structure 10 is 1:1:4.

[0059] For example, the R pixel structure 9, the G pixel structure 8 and the B pixel structure 10 adopt all-phosphorescent or all-high-fluorescent OLED technology. Since the EQE efficiency ratio of RGB (the proportional relationship between the first constant, the second constant and the third constant) is approximately 1:1:1, the area ratio relationship between the R pixel structure 9, the G pixel structure 8 and the B pixel structure 10 is 1:1:1.

[0060] As a specific embodiment, Figure 2 As shown, the R pixel structure 9, the G pixel structure 8 and the B pixel structure 10 are all rectangular in shape, wherein the dimensions of the R pixel structure 9 and the G pixel structure 8 are both 2.1um×5.8um, and the dimension of the B pixel structure 10 is 4.0um×12um.

[0061] As a specific embodiment, Figure 3 and Figure 4 As shown, Figure 3 and Figure 4 , two RGB pixel devices corresponding to three-layer OLED devices are shown, wherein: Figure 3 and Figure 4 The devices in the figure are of two different structures, the difference between them is the presence or absence of a pixel definition layer; the orange film layer is a triple device film layer, which is deposited on the anode (blue) and the sub-pixel partition structure (black). The sub-pixel partition structure is used to define the actual light-emitting area of ​​the pixel, and its size depends on the design of the screen aperture ratio. The anode is Figure 3 The blue area in the figure corresponds to the R pixel structure 9, the G pixel structure 8 or the B pixel structure 10.

[0062] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0063] This article uses specific examples to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand the method and core ideas of this application. At the same time, for those skilled in the art, according to the ideas of this application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting this application.

Claims

1. A three-layer OLED device, characterized in that: The three-layer OLED device comprises: an R light-emitting unit, a G light-emitting unit, a B light-emitting unit, an anode layer and a cathode layer; The R light emitting unit, the G light emitting unit and the B light emitting unit are stacked and combined based on a first preset position to obtain a light emitting unit layer; The light-emitting unit layer is arranged on the anode layer, and the cathode layer is arranged on the light-emitting unit layer.

2. The three-layer OLED device according to claim 1, characterized in that: The light emitting unit layer further comprises: a first charge generating layer and a second charge generating layer; The position of the first charge generation layer and the position of the second charge generation layer are set based on a second preset position.

3. The three-layer OLED device according to claim 1, characterized in that: The anode layer is made of metal material or composite material.

4. The three-layer OLED device according to claim 1, characterized in that: The cathode layer is made of TCO material, ITO material, AZO material or IZO material.

5. A method for preparing an RGB pixel device corresponding to a three-layer OLED device, characterized in that: The method for preparing the RGB pixel device corresponding to the triple-layer OLED device comprises: Obtaining the monochromatic efficiency and pixel area of ​​the R light-emitting unit, the G light-emitting unit, and the B light-emitting unit in the three-layer OLED device; The first constant is obtained by multiplying the monochromatic efficiency of the R light emitting unit and the pixel area; The second constant is obtained by multiplying the monochromatic efficiency of the G light emitting unit and the pixel area; The third constant is obtained by multiplying the monochrome efficiency of the B light emitting unit and the pixel area; determining a proportional relationship among the first constant, the second constant, and the third constant; The inverse ratio of the proportional relationship is used as the area proportional relationship of the R pixel structure, the G pixel structure, and the B pixel structure; manufacturing an R pixel structure, a G pixel structure, and a B pixel structure based on an area ratio relationship among the R pixel structure, the G pixel structure, and the B pixel structure; The R pixel structure, the G pixel structure and the B pixel structure are arranged in the anode layer of the three-layer OLED device based on the third preset position.

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