A perovskite light-absorbing thin film, a perovskite solar cell, its fabrication method and application

Abstract

This invention belongs to the field of optoelectronic materials and devices technology, specifically relating to a perovskite light-absorbing thin film, a perovskite solar cell, its preparation method, and its applications. The perovskite solar cell of this invention comprises, sequentially arranged, a transparent conductive oxide substrate, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal back electrode; wherein the perovskite light-absorbing thin film comprises a boron-nitrogen heterocyclic compound and an organic-inorganic hybrid perovskite material. The boron-nitrogen heterocyclic compound material of this invention has a simple structure, exhibiting diversity, scalability, and universality; furthermore, perovskite optoelectronic devices doped with boron-nitrogen heterocyclic compounds not only reduce the number of defects in the perovskite thin film, resulting in a uniform film surface, but also improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic materials and devices technology, specifically relating to a perovskite light-absorbing thin film, a perovskite solar cell, its preparation method and application. Background Technology

[0002] Organic-inorganic metal halide perovskite semiconductor materials have attracted widespread attention from academia and industry in recent years due to their excellent photoelectric properties, such as tunable bandgap, readily available raw materials, direct bandgap, and high absorption coefficient. They are applied in various fields, including photovoltaic power generation, light emission, and detectors. Among these, perovskite solar cells, as a representative of the next generation of thin-film photovoltaic cells, have advantages such as high theoretical photoelectric conversion efficiency, low cost, and ease of processing. Currently, their photoelectric conversion efficiency is comparable to that of crystalline silicon cells.

[0003] The basic structure of a perovskite solar cell includes a glass substrate coated with a transparent conductive oxide thin film (as the top electrode), an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a back electrode. Its basic working principle is that when a beam of light with energy greater than the perovskite bandgap is irradiated onto the perovskite surface and absorbed, electron-hole pairs are excited. Free electrons and holes are transferred from their respective charge transport layers, travel through the external circuit to the back electrode, and recombine, thus completing a circuit. Therefore, the smooth transport of charge carriers is one of the key factors determining the photoelectric conversion efficiency of the device.

[0004] However, due to the easy crystallization of perovskite materials, numerous defects exist at the crystal interfaces. These defects become recombination centers for charge carriers, affecting the photoelectric performance of devices. Simultaneously, these defects also serve as sites for perovskite material decomposition. Introducing defect-passivating materials into the perovskite precursor solution, such as functional groups containing oxygen, sulfur, and halogen atoms, allows for coordination and interaction with corresponding defect atoms, thus passivating the defects and improving the photoelectric performance of perovskite materials. While commonly used defect passivating materials can improve the photoelectric conversion efficiency of devices, the high photoelectric conversion efficiency of current perovskite solar cells comes at the cost of sacrificing the effective illumination area of ​​the device. As the device area increases, the photoelectric conversion efficiency of the cell decreases significantly, making it difficult to meet the demands of large-scale commercial applications. One reason for this problem is the poor uniformity of perovskite thin films.

[0005] Therefore, developing multifunctional additives that passivate defects in perovskite thin films while regulating the crystallinity of perovskite and improving the quality of the films is of great practical significance for accelerating the commercial application of perovskite solar cells. Summary of the Invention

[0006] The problem the invention aims to solve

[0007] To address existing problems, this invention provides a perovskite light-absorbing thin film, a perovskite solar cell, its preparation method, and its application. By introducing a boron-nitrogen heterocyclic compound into the perovskite precursor solution to prepare the perovskite light-absorbing thin film, and applying it to a perovskite solar cell with a formal structure, the defects of the perovskite material can be effectively passivated, overcoming the problem of poor uniformity of the perovskite thin film.

[0008] Solution for solving the problem

[0009] [1] A perovskite light-absorbing layer thin film comprising a boron-nitrogen heterocyclic compound and an organic-inorganic hybrid perovskite material;

[0010] The structure of the boron-nitrogen heterocyclic compound is as follows:

[0011]

[0012] R is selected from hydrogen, fluorine, chlorine, and bromine atoms.

[0013] [2] The perovskite light-absorbing layer thin film according to [1] is characterized in that,

[0014] The chemical formula of the organic-inorganic hybrid perovskite material is MA. x FA 1-x PbI3, where MA represents methylamine cation, FA represents formamidin cation, and 0≤x≤1.

[0015] [3] A method for preparing a perovskite light-absorbing layer thin film according to [2], comprising the following steps:

[0016] 1) Dissolve the boron-acid fused ring compound and lead iodide in a mixed solution to obtain a perovskite precursor solution; dissolve methylamine hydroiodate, formamidin hydroiodate and methylamine hydrochloride in isopropanol to obtain an amine salt isopropanol solution;

[0017] 2) Spin-coat the perovskite precursor solution from step 1) onto the substrate, and then perform annealing treatment;

[0018] 3) Spin-coat the amine salt isopropanol solution from step 1) onto the annealed material in step 2), and then heat-treat it to obtain a perovskite light-absorbing layer film.

[0019] [4] The preparation method according to [3] is characterized in that,

[0020] In step 1),

[0021] The mixed solution is a mixture of DMF and DMSO, preferably a mixture of DMF and DMSO in a volume ratio of 9:1.

[0022] [5] The preparation method according to [3] or [4] is characterized in that,

[0023] In step 1),

[0024] The concentration of boron-nitrogen heterocyclic compounds in the perovskite precursor solution is 0.05-6.0 mg / mL; and / or,

[0025] The concentration of lead iodide in the perovskite precursor solution was 691 mg / mL.

[0026] [6] The preparation method according to any one of [3] to [5] is characterized in that,

[0027] In step 1),

[0028] At a concentration level of mg / mL, the concentration ratio of methylamine hydroiodide, formamidin hydroiodide and methylamine hydrochloride is (7-10):(70-100):(7-10), preferably 9:85:10.

[0029] [7] The preparation method according to any one of [3] to [6] is characterized in that,

[0030] In step 2),

[0031] The spin coating speed is 1200-1800 rpm, preferably 1500 rpm; and / or,

[0032] Spin coating time is 20-40 seconds, preferably 30 seconds; and / or,

[0033] The annealing temperature is 60-80℃, preferably 70℃; and / or,

[0034] Annealing time is 40-80 seconds, preferably 60 seconds.

[0035] [8] The preparation method according to any one of [3] to [7] is characterized in that,

[0036] In step 3),

[0037] The spin coating speed is 1500-2500 rpm, preferably 2000 rpm; and / or,

[0038] Spin coating time is 20-40 seconds, preferably 30 seconds; and / or,

[0039] The heating temperature is 120-180℃, preferably 150℃; and / or,

[0040] Heating time is 15-20 minutes.

[0041] [9] A perovskite solar cell comprising a transparent conductive oxide substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal back electrode arranged sequentially.

[0042] The perovskite light-absorbing layer comprises a perovskite light-absorbing layer film according to [1] or [2] or a perovskite light-absorbing layer film obtained by any one of [3] to [8].

[0043]

[10] The use of a perovskite light-absorbing layer thin film according to [1] or [2] or a perovskite solar cell according to [9] in the field of perovskite optoelectronics, preferably in the preparation of optoelectronic devices, and more preferably in the preparation of solar cells.

[0044] The effects of the invention

[0045] 1) The boron-nitrogen heterocyclic compound material described in this invention has a simple structure and is diverse, easily expandable, and universal;

[0046] 2) The boron-nitrogen heterocyclic compound material described in this invention can be applied to perovskite optoelectronic devices, which not only reduces the number of defects in the perovskite film and makes the film surface uniform, but also improves the photoelectric conversion efficiency and stability of perovskite solar cells. Attached Figure Description

[0047] Figure 1 Structure of perovskite solar cell devices.

[0048] Figure 2 The current-voltage (JV) characteristics of the perovskite solar cells prepared in Examples 1-4 and Comparative Example 1 of this invention are shown in the figure.

[0049] Figure 3 (a) Scanning electron microscope image of the perovskite light-absorbing layer thin film prepared in Comparative Example 1; (b) Scanning electron microscope image of the perovskite light-absorbing layer thin film prepared in Example 1.

[0050] Figure 4 A schematic diagram of the photoelectric conversion efficiency of the perovskite solar cells prepared in Example 1 and Comparative Example 1 of this invention under continuous illumination. Detailed Implementation

[0051] Various exemplary embodiments, features, and aspects of the present invention will be described in detail below. The term "exemplary" as used herein means "serving as an example, embodiment, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as superior to or better than other embodiments.

[0052] Furthermore, to better illustrate the present invention, numerous specific details are set forth in the following detailed embodiments. Those skilled in the art should understand that the present invention can be practiced without certain specific details. In other instances, methods, means, apparatus, and steps well known to those skilled in the art have not been described in detail in order to highlight the spirit of the present invention.

[0053] Unless otherwise stated, all units used in this specification are international standard units, and all numerical values ​​and ranges appearing in this invention should be understood to include systematic errors that are unavoidable in industrial production.

[0054] In this specification, the word "may" has two meanings: to perform a certain process and not to perform a certain process.

[0055] In this specification, references to "some specific / preferred embodiments," "other specific / preferred embodiments," "implementation," etc., refer to specific elements (e.g., features, structures, properties, and / or characteristics) related to that embodiment, which are included in at least one of the embodiments described herein and may or may not be present in other embodiments. Furthermore, it should be understood that these elements may be combined in any suitable manner in various embodiments.

[0056] In this specification, the range of values ​​referred to as "value A to value B" refers to the range including the endpoint values ​​A and B.

[0057] This invention provides a perovskite light-absorbing layer film comprising a boron-nitrogen heterocyclic compound and an organic-inorganic hybrid perovskite material;

[0058] The structure of the boron-nitrogen heterocyclic compound is as follows:

[0059]

[0060] R is selected from hydrogen, fluorine, chlorine and bromine atoms.

[0061] When R is a hydrogen atom, the boron-nitrogen heterocyclic compound is named BNH; when R is a fluorine atom, the boron-nitrogen heterocyclic compound is named BNF; when R is a chlorine atom, the boron-nitrogen heterocyclic compound is named BNCl; when R is a bromine atom, the boron-nitrogen heterocyclic compound is named BNBr.

[0062] The perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0063] The chemical formula of organic-inorganic hybrid perovskite material is MA x FA 1-xPbI3, where MA represents methylamine cation, FA represents formamidin cation, and 0≤x≤1.

[0064] The thickness of the perovskite light-absorbing layer film of the present invention is not particularly limited and can be adjusted according to specific needs.

[0065] In the perovskite light-absorbing layer film of the present invention, the ratio of boron-nitrogen heterocyclic compound to organic-inorganic hybrid perovskite material (or the doping ratio of boron-nitrogen heterocyclic compound) can also be adjusted according to specific needs.

[0066] This invention also provides a method for preparing a perovskite light-absorbing layer thin film, which includes the following steps:

[0067] 1) Dissolve the boron-acid fused ring compound and lead iodide in a mixed solution to obtain a perovskite precursor solution; dissolve methylamine hydroiodate, formamidin hydroiodate and methylamine hydrochloride in isopropanol to obtain an amine salt isopropanol solution;

[0068] 2) Spin-coat the perovskite precursor solution from step 1) onto the substrate, and then perform annealing treatment;

[0069] 3) Spin-coat the amine salt isopropanol solution from step 1) onto the annealed material in step 2), and then heat-treat it to obtain a perovskite light-absorbing layer film.

[0070] The method for preparing the perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0071] In step 1), the mixed solution is a mixture of DMF and DMSO, preferably a mixture of DMF and DMSO in a volume ratio of 9:1.

[0072] The method for preparing the perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0073] In step 1), the concentration of boron-nitrogen heterocyclic compound in the perovskite precursor solution is 0.05-6.0 mg / mL; and / or, the concentration of lead iodide in the perovskite precursor solution is 691 mg / mL.

[0074] The method for preparing the perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0075] There are no special restrictions on the concentrations of methylamine hydroiodide, formamidin hydroiodide, and methylamine hydrochloride; they can be adjusted according to specific needs.

[0076] Preferably, at a concentration level of mg / mL, the concentration ratio of methylamine hydroiodide, formamidin hydroiodide and methylamine hydrochloride is (7-10):(70-100):(7-10).

[0077] More preferably, at a concentration level of mg / mL, the concentration ratio of methylamine hydroiodide, formamidin hydroiodide and methylamine hydrochloride is 9:85:10.

[0078] The method for preparing the perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0079] In step 2), the spin coating speed is 1200-1800 rpm; and / or,

[0080] Spin coating time is 20-40 seconds; and / or,

[0081] The annealing temperature is 60-80℃; and / or,

[0082] Annealing time is 40-80 seconds.

[0083] Preferably, in step 2), the spin coating speed is 1500 rpm; and / or, the spin coating time is 30 seconds; and / or, the annealing temperature is 70°C; and / or, the annealing time is 60 seconds.

[0084] The method for preparing the perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0085] In step 3), the spin coating speed is 1500-2500 rpm; and / or, the spin coating time is 20-40 seconds; and / or, the heating temperature is 120-180°C; and / or, the heating time is 15-20 minutes.

[0086] Preferably, in step 3), the spin coating speed is 2000 rpm; and / or, the spin coating time is 30 seconds; and / or, the heating temperature is 150°C; and / or, the heating time is 15-20 minutes.

[0087] The method for preparing the perovskite light-absorbing layer thin film according to the present invention is characterized in that,

[0088] The present invention also provides a perovskite solar cell, which includes a transparent conductive oxide substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal back electrode arranged sequentially.

[0089] The perovskite light-absorbing layer comprises a perovskite light-absorbing layer film according to the present invention or a perovskite light-absorbing layer film obtained by the preparation method of the present invention.

[0090] The above-mentioned method for fabricating perovskite solar cells includes the following steps:

[0091] 1) The transparent conductive oxide substrate was ultrasonically cleaned with ultrapure water, anhydrous ethanol and isopropanol, dried with nitrogen, and treated with ultraviolet ozone.

[0092] 2) A colloidal solution of tin dioxide is spin-coated onto a transparent conductive oxide substrate, followed by heat treatment to form an electron transport layer;

[0093] 3) A perovskite light-absorbing layer is formed on the electron transport layer by the preparation method described in this invention;

[0094] 4) A hole transport layer is formed by spin-coating Spiro-OMeTAD chlorobenzene solution onto the perovskite light-absorbing layer;

[0095] 5) Deposit 60-100 nM gold electrodes on the hole transport layer.

[0096] The present invention also provides the use of the perovskite light-absorbing layer thin film according to the present invention or the perovskite solar cell according to the present invention in the field of perovskite optoelectronics, preferably in the preparation of optoelectronic devices, and more preferably in the preparation of solar cells.

[0097] Example

[0098] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0099] Example 1

[0100] Perovskite solar cells were fabricated using the boron-nitrogen heterocyclic compound BNH of this invention, and the photovoltaic parameters of the device were tested. The device structure adopts a formal nip-type structure, such as... Figure 1 As shown, it includes a transparent conductive oxide substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer, and a metal back electrode.

[0101] The device fabrication process is as follows:

[0102] 1) Cleaning of the transparent conductive oxide substrate: The substrate was ultrasonically cleaned for 20 minutes each with a cleaning agent, ultrapure water, anhydrous ethanol, and isopropanol, followed by nitrogen blowing to dry any residual solvent on the surface. Then, the transparent conductive oxide substrate was treated with ultraviolet ozone to remove any residual organic matter on the surface.

[0103] 2) Spin-coat a colloidal solution of tin dioxide onto a transparent conductive oxide substrate at a spin speed of 3000 rpm for 30 seconds. After spin-coating, heat at 100°C for 10 minutes to form an electron transport layer.

[0104] 3) A two-step solvent method was used to prepare the perovskite light-absorbing layer. First, the boron-nitrogen heterocyclic compound BNH and lead iodide were dissolved in a mixed solution of DMF:DMSO at a volume ratio of 9:1 to obtain a perovskite precursor solution, in which the concentration of lead iodide was 691 mg / mL. -1 The concentration of the boron-nitrogen heterocyclic compound was 1.0 mg / mL. -1 9 mg of methylamine hydroiodide (MAI), 85 mg of formamidin hydroiodide (FAI), and 10 mg of methylamine hydrochloride (MACl) were weighed and dissolved in 1 mL of isopropanol to obtain an amine salt isopropanol solution. The perovskite precursor solution was spin-coated onto the electron transport layer at a speed of 1500 rpm for 30 seconds. Then, annealing was performed at 70°C for 60 seconds. A certain amount of the amine salt isopropanol solution was then spin-coated onto the annealed material at a speed of 2000 rpm for 30 seconds. Finally, the material was heated in air at 150°C for 15-20 minutes to obtain the perovskite light-absorbing layer.

[0105] (4) A hole transport layer is formed by spin-coating Spiro-OMeTAD chlorobenzene solution onto the perovskite light absorption layer.

[0106] (5) Deposit 60-100 nM gold electrodes on the hole transport layer.

[0107] Example 2

[0108] Perovskite solar cells were prepared according to the method of Example 1, except that the boron-nitrogen heterocyclic compound was BNF at a concentration of 0.05 mg / mL. -1 .

[0109] Example 3

[0110] Perovskite solar cells were prepared according to the method of Example 1, except that the boron-nitrogen heterocyclic compound was BNCl, and the concentration was 2.0 mg / mL. -1 .

[0111] Example 4

[0112] Perovskite solar cells were prepared according to the method in Example 1, except that the boron-nitrogen heterocyclic compound was BNBr at a concentration of 6.0 mg / mL. -1 .

[0113] Comparative Example 1

[0114] Perovskite solar cells were prepared according to the method of Example 1, except that no boron-nitrogen heterocyclic compound was added.

[0115] Photovoltaic parameters

[0116] Photovoltaic performance testing of perovskite solar cells:

[0117] (1) The current-voltage (JV) curves of the perovskite solar cells prepared in Examples 1-4 and Comparative Example 1 are shown in the figure. Figure 2 As shown in Table 1, the photovoltaic parameters of perovskite solar cells prepared by perovskite precursor solutions doped with different boron-nitrogen heterocyclic compounds are shown in Table 1.

[0118] From Table 1 and Figure 2 It can be observed that the short-circuit current density, open-circuit voltage, fill factor, and photoelectric conversion efficiency of Examples 1-4 are all improved, and the device performance prepared by the four boron-nitrogen heterocyclic compounds is similar, indicating that boron-nitrogen heterocyclic compounds have good versatility. Specifically, the increase in short-circuit current density is related to the hole transport properties of the boron-nitrogen heterocyclic compounds; the increase in open-circuit voltage indicates that non-radiative recombination inside the device is well suppressed; the increase in fill factor indicates that the series resistance inside the cell decreases while the parallel resistance increases, and the introduction of organic boron-nitrogen heterocyclic compounds does not hinder carrier transport. The improvement in photoelectric conversion efficiency indicates that the introduction of boron-nitrogen heterocyclic compounds can effectively passivate defects in perovskite materials, resulting in a uniform perovskite film surface.

[0119] (2) The perovskite light-absorbing layer film prepared in Comparative Example 1 and the perovskite light-absorbing layer film prepared in Example 1 were subjected to SEM testing, and the results are as follows: Figure 3 As shown in (a) and (b).

[0120] Figure 3 Compared with (a) and (b), the perovskite light-absorbing layer film in Comparative Example 1 has a large number of pores. These defects provide channels for the penetration of external substances such as water and oxygen, thereby reducing the performance of the device. In contrast, the perovskite light-absorbing layer film in Example 1 of the present invention has a significantly increased grain size and a uniform film surface.

[0121] Table 1

[0122]

[0123] (3) The stability of the perovskite solar cells prepared in Example 1 and Comparative Example 1 was tested, and the results are as follows: Figure 4 As shown.

[0124] from Figure 4It can be observed that under 500 hours of continuous illumination, the perovskite solar cell prepared in Example 1 exhibits a slower decrease in photoelectric conversion efficiency, and its stability is significantly improved compared to Comparative Example 1. This result indicates that the introduction of boron-nitrogen heterocyclic compounds can effectively passivate defects in perovskite materials, resulting in a more uniform perovskite film surface, thereby enhancing the performance and stability of the perovskite solar cell.

[0125] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A perovskite light-absorbing thin film comprising a boron-nitrogen heterocyclic compound and an organic-inorganic hybrid perovskite material; in, The structure of the boron-nitrogen heterocyclic compound is as follows: R is selected from hydrogen, fluorine, chlorine, and bromine atoms; The chemical formula of the organic-inorganic hybrid perovskite material is MA. x FA 1-x PbI3, where MA represents methylamine cation, FA represents formamidin cation, and 0≤x≤1.

2. A method for preparing a perovskite light-absorbing layer thin film according to claim 1, comprising the following steps: 1) Dissolve the boron-acid fused ring compound and lead iodide in a mixed solution to obtain a perovskite precursor solution; dissolve methylamine hydroiodate, formamidin hydroiodate and methylamine hydrochloride in isopropanol to obtain an amine salt isopropanol solution; 2) Spin-coat the perovskite precursor solution from step 1) onto the substrate, and then perform annealing treatment; 3) Spin-coat the amine salt isopropanol solution from step 1) onto the annealed material in step 2), and then heat-treat it to obtain a perovskite light-absorbing layer film.

3. The method for preparing the perovskite light-absorbing layer thin film according to claim 2, characterized in that, In step 1), The mixed solution is a mixture of DMF and DMSO.

4. The method for preparing the perovskite light-absorbing layer thin film according to claim 2 or 3, characterized in that, In step 1), The mixed solution is a mixture of DMF and DMSO in a volume ratio of 9:

1.

5. The method for preparing the perovskite light-absorbing layer thin film according to claim 2, characterized in that, In step 1), The concentration of boron-nitrogen heterocyclic compounds in the perovskite precursor solution is 0.05-6.0 mg / mL; and / or, The concentration of lead iodide in the perovskite precursor solution was 691 mg / mL.

6. The method for preparing the perovskite light-absorbing layer thin film according to claim 2, characterized in that, In step 1), At a concentration level of mg / mL, the concentration ratio of the methylamine hydroiodide, formamidin hydroiodide and methylamine hydrochloride is (7-10):(70-100):(7-10).

7. The method for preparing the perovskite light-absorbing layer thin film according to claim 2 or 6, characterized in that, In step 1), At a concentration level of mg / mL, the concentration ratio of methylamine hydroiodide, formamidin hydroiodide, and methylamine hydrochloride is 9:85:

10.

8. The method for preparing the perovskite light-absorbing layer thin film according to claim 2, characterized in that, In step 2), Spin coating speed is 1200-1800 rpm; and / or, Spin coating time is 20-40 seconds; and / or, The annealing temperature is 60-80℃; and / or, Annealing time is 40-80 seconds.

9. The method for preparing the perovskite light-absorbing layer thin film according to claim 8, characterized in that, The spin coating speed is 1500 rpm.

10. The method for preparing the perovskite light-absorbing layer thin film according to claim 8, characterized in that, Spin coating time is 30 seconds.

11. The method for preparing the perovskite light-absorbing layer thin film according to claim 8, characterized in that, The annealing temperature is 70°C.

12. The method for preparing the perovskite light-absorbing layer thin film according to claim 8, characterized in that, The annealing time is 60 seconds.

13. The method for preparing the perovskite light-absorbing layer thin film according to claim 2, characterized in that, In step 3), Spin coating speed is 1500-2500 rpm; and / or, Spin coating time is 20-40 seconds; and / or, The heating temperature is 120-180℃; and / or, Heating time is 15-20 minutes.

14. The method for preparing the perovskite light-absorbing layer thin film according to claim 13, characterized in that, The spin coating speed is 2000 rpm.

15. The method for preparing the perovskite light-absorbing layer thin film according to claim 13, characterized in that, Spin coating time is 30 seconds.

16. The method for preparing the perovskite light-absorbing layer thin film according to claim 13, characterized in that, The heating temperature is 150°C.

17. A perovskite solar cell, comprising a transparent conductive oxide substrate, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal back electrode arranged sequentially. in, The perovskite light-absorbing layer comprises the perovskite light-absorbing layer film according to claim 1 or the perovskite light-absorbing layer film obtained by the preparation method of the perovskite light-absorbing layer film according to claim 2.

18. The use of a perovskite light-absorbing layer thin film according to claim 1 or a perovskite solar cell according to claim 17 in the field of perovskite optoelectronics.

19. Use of a perovskite light-absorbing layer thin film according to claim 1 or a perovskite solar cell according to claim 17 in the fabrication of optoelectronic devices.

20. Use of a perovskite light-absorbing layer thin film according to claim 1 or a perovskite solar cell according to claim 17 in the fabrication of a solar cell.

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