Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus (1) according to an embodiment is provided with a rinsing tank (62), a processing tank (61), an acquisition unit (10a), a concentration adjustment unit (140), and a concentration control unit (10b). The rinsing tank (62) is a tank for storing a rinsing liquid containing moisture, and the rinsing tank (62) performs a rinsing process on a plurality of substrates (W) having inorganic films by immersing the plurality of substrates (W) in the stored rinsing liquid. The processing tank (61) is a tank for storing a phosphoric acid treatment liquid, and the processing tank (61) performs an etching treatment on the plurality of substrates (W) by immersing the plurality of substrates (W) after the rinsing treatment in the stored phosphoric acid treatment liquid. The acquisition unit (10a) acquires the number of substrates (W) that are immersed in the processing tank (61) together. The concentration adjustment unit (10b) adjusts the concentration of the phosphoric acid treatment liquid stored in the treatment tank (61). On the basis of the number of substrates (W) acquired by the acquisition unit (10a), the concentration control unit (140) acquires the amount of rinsing liquid introduced into the processing tank (61) together with the plurality of substrates (W), and on the basis of the amount of rinsing liquid introduced, the concentration control unit (140) controls the concentration adjustment unit (140) to adjust the concentration of the phosphoric acid processing liquid.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] Conventionally, there is known a technique for etching a plurality of substrates at once by immersing the plurality of substrates in an etching tank storing an etching solution.

[0003] Patent Document 1 discloses a method for etching a semiconductor wafer in which the temperature of an etching solution is set high in advance in consideration of the amount of temperature drop caused by the introduction of the semiconductor wafer.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2004-214243 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] The present disclosure provides a technique for collectively etching a plurality of substrates using a phosphoric acid aqueous solution and capable of suppressing variations in etching amounts.

[0009] Solutions for solving problems

[0010] A substrate processing device according to one embodiment of the present disclosure includes a rinse tank, a processing tank, an acquisition unit, a concentration adjustment unit, and a concentration control unit. The rinse tank is a tank storing a rinse liquid containing water, and the rinse tank performs a rinse treatment on multiple substrates by immersing multiple substrates having inorganic films in the stored rinse liquid. The processing tank is a tank storing a phosphoric acid treatment liquid, and the processing tank performs an etching treatment on multiple substrates by immersing multiple substrates after the rinse treatment in the stored phosphoric acid treatment liquid. The acquisition unit acquires the number of substrates immersed in the processing tank at the same time. The concentration adjustment unit adjusts the concentration of the phosphoric acid treatment liquid stored in the processing tank. The concentration control unit acquires the amount of rinse liquid brought into the processing tank together with the multiple substrates, i.e., the brought-in amount, based on the number of substrates acquired by the acquisition unit, and controls the concentration adjustment unit based on the brought-in amount to adjust the concentration of the phosphoric acid treatment liquid.

[0011] Effects of the Invention

[0012] According to the present disclosure, in the technology of etching a plurality of substrates at a time using a phosphoric acid aqueous solution, it is possible to suppress variations in etching amounts. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic block diagram showing the structure of a substrate processing system according to an embodiment.

[0014] Figure 2It is a schematic block diagram showing the structure of an etching processing apparatus according to an embodiment.

[0015] Figure 3 It is a block diagram showing the structure of the control device involved in the embodiment.

[0016] Figure 4 This is a diagram showing an example of the relationship between the number of wafers and the amount of rinse liquid introduced.

[0017] Figure 5 This is a diagram showing an example of the relationship between the number of wafers and the temperature change before and after the wafers are loaded.

[0018] Figure 6 This is a flowchart showing an example of a cyclic etching process performed by the substrate processing system according to the embodiment.

[0019] Figure 7 This is a flowchart showing an example of a procedure of a concentration control process executed by the substrate processing system according to the embodiment.

[0020] Figure 8 1 is a flowchart showing an example of a procedure of a temperature control process executed by the substrate processing system according to the embodiment. DETAILED DESCRIPTION

[0021] Below, with reference to the accompanying drawings, a method for implementing the substrate processing device and substrate processing method disclosed herein (hereinafter referred to as an "implementation method") is described in detail. In addition, the present disclosure is not limited by the implementation method. In addition, the various implementation methods can be appropriately combined within the scope that does not cause inconsistency in the processing content. In addition, in the following embodiments, the same reference numerals are marked on the same parts, and repeated descriptions are omitted.

[0022] In the embodiments shown below, expressions such as “certain”, “orthogonal”, “perpendicular” or “parallel” are sometimes used, but these expressions do not need to be strictly “certain”, “orthogonal”, “perpendicular” or “parallel”. That is, the above expressions allow for deviations in manufacturing accuracy, setting accuracy, etc.

[0023] In addition, in the drawings referred to below, an orthogonal coordinate system is sometimes shown in which mutually orthogonal X-axis direction, Y-axis direction and Z-axis direction are defined and the positive direction of the Z-axis is set to the vertical upward direction, so as to make the description easier to understand. In addition, the rotation direction with the vertical axis as the rotation center is sometimes referred to as the θ direction.

[0024] There is proposed a technique of selectively etching the silicon nitride film out of the silicon nitride film and the silicon oxide film by immersing a substrate on which silicon nitride films and silicon oxide films are alternately stacked in a phosphoric acid treatment solution.

[0025] Here, when a substrate subjected to a rinse treatment is placed in a treatment tank, the rinse liquid adhering to the substrate may be brought into the treatment tank, and the concentration of the phosphoric acid treatment liquid may be lower than a desired concentration.

[0026] The amount of the rinse liquid brought into the treatment tank varies according to the number of substrates immersed in the treatment tank at the same time. Specifically, the more substrates are immersed in the treatment tank at the same time, the more rinse liquid is brought into the treatment tank. When the amount of the rinse liquid brought into the treatment tank varies, the degree of reduction in the concentration of the phosphoric acid treatment solution in the treatment tank also varies. Therefore, for example, in the case where 25 substrates are etched at the same time and in the case where 50 substrates are etched at the same time, there may be a deviation in the etching amount caused by the concentration difference of the phosphoric acid treatment solution.

[0027] In recent years, as the film is stacked higher, the non-uniformity of the etching rate between the top and bottom caused by the Si concentration difference in the stacking direction has become significant. As a countermeasure to this, a cyclic etching process in which a rinse process and an etching process are repeated in a short time has been proposed. However, the shorter the time required for one etching process, the greater the influence of the concentration reduction of the phosphoric acid treatment solution caused by the introduction of the rinse solution. In view of this situation, a technology that can suppress the deviation of the etching amount is expected in the technology of etching multiple substrates at the same time using a phosphoric acid aqueous solution.

[0028] <Structure of substrate processing system>

[0029] First, refer to Figure 1 Next, a configuration of a substrate processing system 1 according to the embodiment will be described. Figure 1 1 is a schematic block diagram showing a configuration of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

[0030] like Figure 1 As shown, a substrate processing system 1 according to the embodiment includes a carrier loading and unloading unit 2 , a batch forming unit 3 , a batch placing unit 4 , a batch transporting unit 5 , a batch processing unit 6 , and a control device 7 .

[0031] The carrier loading and unloading section 2 includes a carrier stage 20 , a carrier conveying mechanism 21 , carrier storage stages (stock stages: stock) 22 and 23 , and a carrier placement stage 24 .

[0032] The carrier stage 20 carries a plurality of front-opening wafer pods (FOUPs) F transported from the outside. The front-opening wafer pod F is a container that accommodates a plurality of (e.g., 25) wafers W arranged vertically in a horizontal posture. The carrier transport mechanism 21 transports the front-opening wafer pods F between the carrier stage 20, the carrier storage tables 22 and 23, and the carrier placement table 24.

[0033] The substrate transfer mechanism 30 described later carries out the plurality of wafers W before being processed from the front-opening FOUP F mounted on the carrier mounting table 24 to the batch processing unit 6. In addition, the substrate transfer mechanism 30 carries the plurality of wafers W after being processed from the batch processing unit 6 to the front-opening FOUP F mounted on the carrier mounting table 24.

[0034] The batch forming unit 3 has a substrate conveying mechanism 30 for forming a batch. A batch is composed of a plurality of wafers W that are simultaneously processed by combining wafers W contained in one or more front-opening wafer pods F. The plurality of wafers W that form a batch are arranged at a certain interval with their surfaces facing each other. For example, the batch forming unit 3 may form a batch with 25 wafers W contained in one front-opening wafer pod F, or may form a batch with a total of 50 wafers W contained in two front-opening wafer pods F.

[0035] The substrate transfer mechanism 30 transfers a plurality of wafers W between the front-opening FOUP F mounted on the carrier mounting table 24 and the lot mounting unit 4 .

[0036] The batch placement unit 4 includes a batch transfer table 40 on which a batch to be transferred between the batch forming unit 3 and the batch processing unit 6 by the batch transfer unit 5 is temporarily placed (standby). The batch transfer table 40 includes an inlet-side placement table 41 on which a batch formed by the batch forming unit 3 before being processed is placed, and an outlet-side placement table 42 on which a batch processed by the batch processing unit 6 is placed. On the inlet-side placement table 41 and the outlet-side placement table 42, a plurality of wafers W for one batch are placed in a front-to-back arrangement in an upright position.

[0037] The batch transport unit 5 includes a batch transport mechanism 50, and transports the batch between the batch placement unit 4 and the batch processing unit 6 and inside the batch processing unit 6. The batch transport mechanism 50 includes a rail 51, a moving body 52, and a substrate holding body 53.

[0038] The rail 51 is arranged along the X-axis direction across the lot placement unit 4 and the lot processing unit 6. The movable body 52 is configured to be movable along the rail 51 while holding a plurality of wafers W. The substrate holding body 53 is arranged on the movable body 52 and holds a plurality of wafers W arranged in a front-to-back manner in an upright position.

[0039] The batch processing unit 6 performs etching, cleaning, drying, etc. on a plurality of wafers W of one batch at a time. In the batch processing unit 6 , two etching devices 60 , a cleaning device 70 , a cleaning device 80 , and a drying device 90 are arranged along rails 51 .

[0040] The etching device 60 performs etching processing on a plurality of wafers W in a batch at a time. The cleaning device 70 performs cleaning processing on a plurality of wafers W in a batch at a time. The cleaning device 80 performs cleaning processing on the substrate holder 53. The drying device 90 performs drying processing on a plurality of wafers W in a batch at a time. The number of the etching device 60, the cleaning device 70, the cleaning device 80, and the drying device 90 is not limited to Figure 1 Example.

[0041] The etching processing apparatus 60 includes a processing tank 61 for etching processing, a processing tank 62 for rinsing processing, and substrate lifting mechanisms 63 and 64 .

[0042] The processing tank 61 can accommodate one batch of wafers W arranged in an upright position, and stores a chemical solution for etching processing, specifically, a phosphoric acid processing solution. Details of the processing tank 61 will be described later.

[0043] The processing tank 62 stores a rinse liquid. The rinse liquid contains water. For example, the rinse liquid is deionized water. The substrate lifting mechanisms 63 and 64 hold a plurality of wafers W forming a batch in a vertical position and arranged in a front-to-back manner.

[0044] The etching processing apparatus 60 holds the batch conveyed by the batch conveying unit 5 by the substrate lifting mechanism 63 and immerses the batch in the phosphoric acid processing liquid in the processing tank 61 to perform etching processing.

[0045] The batch that has been subjected to etching in the processing tank 61 is transported to the processing tank 62 by the batch transport unit 5. The etching processing device 60 holds the transported batch by the substrate lifting mechanism 64, and performs a rinse process by immersing the batch in the rinse liquid of the processing tank 62. The batch that has been subjected to the rinse process in the processing tank 62 is transported to the processing tank 71 of the cleaning processing device 70 by the batch transport unit 5.

[0046] The cleaning processing device 70 includes a cleaning processing tank 71, a rinsing processing tank 72, and substrate lifting mechanisms 73 and 74. A cleaning solution (hereinafter also referred to as "cleaning solution") is stored in the cleaning processing tank 71. The cleaning solution is, for example, SC-1 (a mixture of ammonia, hydrogen peroxide, and water).

[0047] A treatment liquid (deionized water or the like) for rinsing is stored in the treatment tank 72 for rinsing. The substrate lifting mechanisms 73 and 74 hold a plurality of wafers W for one batch in a vertical position.

[0048] The cleaning processing apparatus 70 holds the batch conveyed by the batch conveying unit 5 by means of the substrate lifting mechanism 73 , and performs cleaning processing by immersing the batch in the cleaning liquid in the processing tank 71 .

[0049] The batch that has been subjected to the cleaning process in the processing tank 71 is transported to the processing tank 72 by the batch transport unit 5. Then, the cleaning processing device 70 holds the transported batch by the substrate lifting mechanism 74, and performs a rinsing process by immersing the batch in the rinsing liquid of the processing tank 72. The batch that has been subjected to the rinsing process in the processing tank 72 is transported to the processing tank 91 of the drying processing device 90 by the batch transport unit 5.

[0050] The drying processing apparatus 90 includes a processing tank 91 and a substrate lifting mechanism 92. A processing gas for drying processing is supplied to the processing tank 91. The substrate lifting mechanism 92 holds a plurality of wafers W for one batch in a front-to-back arrangement in an upright posture.

[0051] The drying device 90 holds the batch conveyed by the batch conveyor 5 by means of the substrate lifting mechanism 92, and performs drying using the drying gas supplied into the processing tank 91. The batch subjected to drying in the processing tank 91 is conveyed by the batch conveyor 5 to the batch loading unit 4.

[0052] The cleaning processing apparatus 80 performs a cleaning process on the substrate holder 53 by supplying a cleaning process liquid and a dry gas to the substrate holder 53 of the batch transfer mechanism 50 .

[0053] The control device 7 controls the operation of each part (carrier loading and unloading part 2, batch forming part 3, batch loading part 4, batch conveying part 5, batch processing part 6, etc.) of the substrate processing system 1. The control device 7 controls the operation of each part of the substrate processing system 1 based on signals from switches, various sensors, etc.

[0054] The control device 7 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits. The control device 7 reads and executes the data stored in the storage unit 9 (see Figure 3 ) program to control the operation of the substrate processing system 1. The details of the control device 7 will be described later.

[0055] <Structure of Etching Processing Apparatus>

[0056] Next, refer to Figure 2 Next, the structure of the etching processing apparatus 60 for performing the etching processing on the wafer W will be described. Figure 2 1 is a schematic block diagram showing the structure of an etching processing apparatus 60 according to the embodiment.

[0057] The etching processing apparatus 60 includes a phosphoric acid processing liquid supply unit 100 and a substrate processing unit 110. The phosphoric acid processing liquid supply unit 100 generates the phosphoric acid processing liquid and supplies it to the substrate processing unit 110.

[0058] The phosphoric acid treatment liquid supply unit 100 includes a phosphoric acid aqueous solution supply unit 101 , a silicic acid solution supply unit 102 , a precipitation inhibitor supply unit 103 , a mixing mechanism 104 , a phosphoric acid treatment liquid supply path 105 , and a flow rate regulator 106 .

[0059] The phosphoric acid aqueous solution supply unit 101 supplies the phosphoric acid aqueous solution to the mixing mechanism 104. The phosphoric acid aqueous solution supply unit 101 includes a phosphoric acid aqueous solution supply source 101a, a phosphoric acid aqueous solution supply path 101b, and a flow rate regulator 101c.

[0060] The phosphoric acid aqueous solution supply source 101a is, for example, a tank storing phosphoric acid aqueous solution. The phosphoric acid aqueous solution supply path 101b connects the phosphoric acid aqueous solution supply source 101a and the mixing mechanism 104 to supply the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 101a to the mixing mechanism 104.

[0061] The flow rate regulator 101c is disposed in the phosphoric acid aqueous solution supply path 101b, and regulates the flow rate of the phosphoric acid aqueous solution supplied to the mixing mechanism 104. The flow rate regulator 101c includes an on-off valve, a flow rate control valve, a flow meter, and the like.

[0062] The silicic acid solution supply unit 102 supplies a solution containing a silicic acid compound (hereinafter also referred to as “silicic acid solution”) to the mixing mechanism 104. The silicic acid solution supply unit 102 includes a silicic acid solution supply source 102a, a silicic acid solution supply path 102b, and a flow rate regulator 102c.

[0063] The silicic acid solution supply source 102a is, for example, a tank storing the silicic acid solution. The silicic acid solution supply path 102b connects the silicic acid solution supply source 102a and the mixing mechanism 104 and is used to supply the silicic acid solution from the silicic acid solution supply source 102a to the mixing mechanism 104.

[0064] The flow rate regulator 102c is disposed in the silicic acid solution supply path 102b, and regulates the flow rate of the silicic acid solution supplied to the mixing mechanism 104. The flow rate regulator 102c includes an on-off valve, a flow rate control valve, a flow meter, etc. The silicic acid solution according to the embodiment is, for example, a solution in which colloidal silicon is dispersed.

[0065] The precipitation inhibitor supply unit 103 supplies the precipitation inhibitor to the mixing mechanism 104. The precipitation inhibitor supply unit 103 includes a precipitation inhibitor supply source 103a, a precipitation inhibitor supply path 103b, and a flow rate regulator 103c.

[0066] The precipitation inhibitor supply source 103a is, for example, a tank storing the precipitation inhibitor. The precipitation inhibitor supply path 103b connects the precipitation inhibitor supply source 103a and the mixing mechanism 104 and is used to supply the precipitation inhibitor from the precipitation inhibitor supply source 103a to the mixing mechanism 104.

[0067] The flow rate regulator 103c is disposed in the precipitation inhibitor supply path 103b, and regulates the flow rate of the precipitation inhibitor supplied to the mixing mechanism 104. The flow rate regulator 103c includes an on-off valve, a flow rate control valve, a flow meter, and the like.

[0068] The precipitation inhibitor involved in the embodiment only needs to include a component that inhibits the precipitation of silicon oxide. For example, the precipitation inhibitor may include a component that stabilizes silicate ions dissolved in the phosphoric acid aqueous solution in a dissolved state to inhibit the precipitation of silicon oxide. In addition, the precipitation inhibitor may also include a component that inhibits the precipitation of silicon oxide by other known methods.

[0069] The precipitation inhibitor according to the embodiment can use, for example, a hexafluorosilicic acid (H2SiF6) aqueous solution containing a fluorine component. In addition, the precipitation inhibitor can also contain additives such as ammonia to stabilize the hexafluorosilicic acid in the aqueous solution.

[0070] As the precipitation inhibitor according to the embodiment, for example, ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 , sodium hexafluorosilicate (Na 2 SiF 6 ) or the like can be used.

[0071] In addition, the precipitation inhibitor according to the embodiment may also include an ion radius of to Here, the "ionic radius" refers to the radius of the ion empirically obtained from the sum of the radii of the anion and the cation obtained based on the lattice constant of the crystal lattice.

[0072] The precipitation inhibitor according to the embodiment may include, for example, an oxide of any one of aluminum, potassium, lithium, sodium, magnesium, calcium, zirconium, tungsten, titanium, molybdenum, hafnium, nickel, and chromium.

[0073] In addition, the precipitation inhibitor according to the embodiment may include at least one of the nitride, chloride, bromide, hydroxide, and nitrate of any of the above-mentioned elements instead of or in addition to the oxide of any of the above-mentioned elements.

[0074] The precipitation inhibitor according to the embodiment may include, for example, at least one of Al(OH) 3 , AlCl 3 , AlBr 3 , Al(NO 3 ) 3 , Al 2 (SO 4 ) 3 , AlPO 4 , and Al 2 O 3 .

[0075] In addition, the precipitation inhibitor involved in the embodiment may also include at least one of KCl, KBr, KOH and KNO 3. Furthermore, the precipitation inhibitor involved in the embodiment may also include at least one of LiCl, NaCl, MgCl 2, CaCl 2 and ZrCl 4.

[0076] The mixing mechanism 104 mixes the phosphoric acid aqueous solution, the silicic acid solution and the precipitation inhibitor to generate a phosphoric acid treatment liquid. That is, the phosphoric acid treatment liquid according to the embodiment contains the phosphoric acid aqueous solution, the silicic acid solution and the precipitation inhibitor.

[0077] As an example, the mixing mechanism 104 includes a tank and a circulation path. A pump, a filter, a heater, etc. are provided in the circulation path. The mixing mechanism 104 can mix the liquid stored in the tank by circulating the liquid stored in the tank using the circulation path. In addition, the mixing mechanism 104 can heat the liquid to a desired temperature using a heater provided in the circulation path.

[0078] The phosphoric acid treatment solution supply path 105 connects the mixing mechanism 104 and the outer tank 112 of the treatment tank 61 , and is used to supply the phosphoric acid treatment solution from the mixing mechanism 104 to the outer tank 112 .

[0079] The flow rate regulator 106 is disposed in the phosphoric acid treatment liquid supply path 105, and regulates the flow rate of the phosphoric acid treatment liquid supplied to the outer tank 112. The flow rate regulator 106 includes an on-off valve, a flow rate control valve, a flow meter, and the like.

[0080] The substrate processing unit 110 performs etching processing on the wafer W by immersing the wafer W in the phosphoric acid processing solution supplied from the phosphoric acid processing solution supply unit 100. The wafer W is, for example, a silicon wafer, which is an example of a substrate. Silicon nitride films and silicon oxide films are alternately stacked on the surface of the wafer W. The substrate processing unit 110 selectively etches the silicon nitride film among the silicon nitride film and the silicon oxide film formed on the wafer W. The silicon nitride film is an example of an inorganic film.

[0081] The substrate processing unit 110 includes a processing tank 61, a substrate lifting mechanism 63, a circulation path 120, a DIW supply unit 130, a gas ejection unit 140, and a processing liquid discharge unit 150. The processing tank 61 includes an inner tank 111 and an outer tank 112.

[0082] The inner tank 111 is a tank for immersing the wafer W in the phosphoric acid treatment solution, and contains the phosphoric acid treatment solution for immersion. The inner tank 111 has an opening 111a at the top, and the phosphoric acid treatment solution is stored up to the vicinity of the opening 111a.

[0083] In the inner tank 111, the plurality of wafers W are immersed in the phosphoric acid treatment solution by the substrate lifting mechanism 63. Thus, the plurality of wafers W are collectively etched. The substrate lifting mechanism 63 is configured to be able to rise and fall, and holds the plurality of wafers W in a vertical posture arranged front and back.

[0084] The outer tank 112 is disposed outside the inner tank 111 so as to surround the inner tank 111 and receives the phosphoric acid treatment solution flowing out of the opening 111a of the inner tank 111. Figure 2 As shown, the liquid level of the outer tank 112 is maintained lower than the liquid level of the inner tank 111.

[0085] The outer tank 112 is provided with a temperature sensor 113 for measuring the temperature of the phosphoric acid treatment solution and a concentration sensor 114 (an example of a measuring unit) for measuring the phosphoric acid concentration of the phosphoric acid treatment solution. The signals generated by the sensors 113 and 114 are input to the control device 7 (see Figure 1 ).

[0086] Inner tank 111 and outer tank 112 are made of a material having high heat resistance and chemical resistance, such as quartz. Thus, control unit 10 can etch wafer W using phosphoric acid treatment solution maintained at a high temperature (eg, 150° C. or higher), thereby efficiently etching wafer W.

[0087] The outer tank 112 and the inner tank 111 are connected via a circulation path 120. One end of the circulation path 120 is connected to the bottom of the outer tank 112, and the other end of the circulation path 120 is connected to a treatment liquid supply nozzle 125 located in the inner tank 111.

[0088] In the circulation path 120 , a pump 121 , a heater 122 (an example of a temperature adjustment unit), and a filter 123 are provided in this order from the outer tank 112 side.

[0089] The pump 121 is used to form a circulation flow of the phosphoric acid treatment solution that is transported from the outer tank 112 to the inner tank 111 via the circulation path 120. In addition, the phosphoric acid treatment solution overflows from the opening 111a of the inner tank 111 and flows out to the outer tank 112 again. In this way, a circulation flow of the phosphoric acid treatment solution is formed in the substrate processing unit 110. That is, the circulation flow is formed in the outer tank 112, the circulation path 120, and the inner tank 111.

[0090] The heater 122 adjusts the temperature of the phosphoric acid treatment solution circulating in the circulation path 120. The filter 123 filters the phosphoric acid treatment solution circulating in the circulation path 120.

[0091] The DIW supply unit 130 includes a DIW supply source 130 a , a DIW supply path 130 b , and a flow rate regulator 130 c . The DIW supply unit 130 supplies DIW (Deionized Water) to the outer tank 112 to adjust the concentration of the phosphoric acid treatment solution stored in the treatment tank 61 .

[0092] The DIW supply path 130 b connects the DIW supply source 130 a and the outer tank 112 , and is used to supply DIW at a predetermined temperature from the DIW supply source 130 a to the outer tank 112 .

[0093] The flow regulator 130c is disposed on the DIW supply path 130b to adjust the supply amount of DIW supplied to the outer tank 112. The flow regulator 130c has an on-off valve, a flow control valve, a flow meter, etc. By adjusting the supply amount of DIW using the flow regulator 130c, the temperature, phosphoric acid concentration, silicate concentration, and precipitation inhibitor concentration of the phosphoric acid treatment solution in the etching treatment device 60 are adjusted.

[0094] The gas ejection unit 140 ejects bubbles of an inert gas (eg, nitrogen) into the phosphoric acid treatment solution stored in the inner tank 111. The gas ejection unit 140 includes an inert gas supply source 140a, an inert gas supply path 140b, a flow rate regulator 140c, and a gas nozzle 140d.

[0095] The inert gas supply path 140 b connects the inert gas supply source 140 a and the gas nozzle 140 d , and is used to supply an inert gas (for example, nitrogen gas) from the inert gas supply source 140 a to the gas nozzle 140 d .

[0096] The flow rate regulator 140c is disposed in the inert gas supply path 140b, and regulates the supply amount of the inert gas supplied to the gas nozzle 140d. The flow rate regulator 140c includes an on-off valve, a flow rate control valve, a flow meter, and the like.

[0097] The gas nozzle 140d is located, for example, below the wafer W and the processing liquid supply nozzle 125 in the inner tank 111. The gas nozzle 140d ejects bubbles of an inert gas toward the phosphoric acid processing liquid stored in the inner tank 111.

[0098] The etching apparatus 60 according to the embodiment can supply a fast-flowing phosphoric acid treatment solution to the gaps between the plurality of wafers W arranged in the inner tank 111 by ejecting bubbles of inert gas from the gas nozzle 140d. Therefore, according to the embodiment, the plurality of wafers W can be etched efficiently and evenly.

[0099] In addition, the etching device 60 can promote the evaporation of water contained in the phosphoric acid treatment solution stored in the inner tank 111 by ejecting bubbles of inert gas from the gas nozzle 140d. The etching device 60 can accelerate the evaporation rate of water by increasing the ejection flow rate of the inert gas. In addition, the etching device 60 can slow down the evaporation rate of water by reducing the ejection flow rate of the inert gas. As described later, the gas ejection unit 140 also functions as a concentration adjustment unit that adjusts the concentration of the phosphoric acid treatment solution stored in the inner tank 111.

[0100] The processing liquid discharge unit 150 discharges the phosphoric acid processing liquid to a drain DR when replacing all or part of the phosphoric acid processing liquid used in the etching process, etc. The processing liquid discharge unit 150 includes a discharge path 150a, a flow rate regulator 150b, and a cooling tank 150c.

[0101] The discharge path 150a is connected to the circulation path 120. The flow regulator 150b is disposed in the discharge path 150a and regulates the discharge amount of the phosphoric acid treatment liquid to be discharged. The flow regulator 150b includes an on-off valve, a flow control valve, a flow meter, and the like.

[0102] The cooling tank 150c temporarily stores and cools the phosphoric acid treatment solution flowing through the discharge path 150a. In the cooling tank 150c, the discharge amount of the phosphoric acid treatment solution is adjusted by the flow regulator 150b.

[0103] Next, refer to Figure 3 to Figure 5 The details of the etching process according to the embodiment will be described. Figure 3 is a block diagram showing the structure of the control device 7 involved in the embodiment. Figure 3 As shown, the control device 7 includes a communication unit 8 , a storage unit 9 , and a control unit 10 .

[0104] In addition, the control device 7 is connected to the temperature sensor 113 and the concentration sensor 114 described above.

[0105] In addition, the control device 7 has Figure 3 In addition to the functional units shown, various functional units that a known computer has, such as various input devices, sound output devices, and the like, may be provided.

[0106] The communication unit 8 is implemented by, for example, a NIC (Network Interface Card) etc. The communication unit 8 is connected to the management device 200 via the network N in a wired or wireless manner and is a communication interface that manages information communication with the management device 200 .

[0107] The communication unit 8 receives various information related to the plurality of wafers W accommodated in the front-opening pod F from the management device 200. The communication unit 8 receives information related to, for example, the number of wafers W accommodated in the front-opening pod F and the type of device formed on each wafer W from the management device 200. The communication unit 8 outputs the received information to the control unit 10. In addition, the management device 200 may also obtain information related to the number of wafers W accommodated in the front-opening pod F from the wafer number measuring device 11 provided in the substrate processing system 1. The wafer number measuring device 11 is, for example, arranged near the carrier mounting table 24 and can optically detect the wafers W accommodated in the front-opening pod F.

[0108] Furthermore, in the present disclosure, the information on the type of device formed on the wafer W may include, for example, the film thickness and the number of stacked layers of the silicon nitride film and the silicon oxide film stacked on the wafer W.

[0109] The storage unit 9 is implemented by a semiconductor memory element such as a RAM or flash memory, a hard disk, an optical disk, or other storage device. The storage unit 9 includes a density adjustment information storage unit 9a and a temperature adjustment information storage unit 9b. The storage unit 9 stores information used for processing performed by the control unit 10.

[0110] The concentration adjustment information storage unit 9a stores concentration adjustment information obtained by corresponding the amount of rinsing liquid brought into the processing tank 61 together with the plurality of substrates and the concentration adjustment value for the number of wafers W. The amount of rinsing liquid brought into the processing tank 61 together with the plurality of substrates. The concentration adjustment value is a value used in the concentration control process performed by the concentration control unit 10b described later. Figure 4 The relationship between the number of wafers W and the carried-in amount will be described.

[0111] Figure 4 : is a graph showing the relationship between the number of wafers W and the amount of rinse liquid introduced. Figure 4 In the graph shown, the horizontal axis represents the number of wafers W, and the vertical axis represents the amount of rinse liquid brought in. Figure 4 As shown, there is a correlation between the number of wafers W and the amount of rinse liquid carried in. As the number of wafers W increases, the amount of rinse liquid carried in increases.

[0112] Figure 4The concentration adjustment information shown is obtained, for example, by measuring the difference between the amount of the rinse liquid in the processing tank 62 before the wafer W is immersed and the amount of the rinse liquid in the processing tank 62 after the wafer W is taken out of the processing tank 62, multiple times while changing the number of wafers W. In addition, without limitation to this, the weight of a wafer W may be measured before it is immersed in the processing tank 62 and after it is taken out of the processing tank 62, and the brought-in amount of each wafer W may be calculated based on the difference in the weight, and the brought-in amount obtained by multiplying the calculated result by an integer multiple is used as the brought-in amount for each number of wafers. Figure 4 The density adjustment information shown is an example of the brought-in amount information obtained by associating the number of substrates and the brought-in amount in advance.

[0113] The concentration adjustment value is, for example, an offset value (wt%) relative to a reference value of the phosphoric acid concentration. The concentration adjustment value can be calculated based on the amount of the phosphoric acid treatment solution introduced. Specifically, the concentration adjustment value is the difference between the phosphoric acid concentration (initial concentration) of the phosphoric acid treatment solution in the inner tank 111 before the rinse solution is introduced into the treatment tank 61 and the phosphoric acid concentration of the phosphoric acid treatment solution in the inner tank 111 after the rinse solution is introduced into the treatment tank 61.

[0114] The temperature adjustment information storage unit 9b stores temperature adjustment information in which the number of wafers W is associated with a temperature adjustment value. The temperature adjustment value is a value used in a temperature control process performed by a temperature control unit 10c described later. Figure 5 The relationship between the number of wafers W and the temperature adjustment value will be described.

[0115] Figure 5 : is a graph showing the relationship between the number of wafers W and the temperature change before and after the wafers W are loaded. Figure 5 In the graph shown, the horizontal axis represents the number of wafers W, and the vertical axis represents the temperature change before and after the wafers W are put in. The temperature change before and after the wafers W are put in refers to the difference between the temperature of the phosphoric acid treatment solution in the inner tank 111 before the wafers W are immersed in the treatment tank 61 and the temperature of the phosphoric acid treatment solution in the inner tank 111 after the wafers W after the rinse treatment are immersed in the treatment tank 61. Figure 5 As shown, there is a correlation between the number of wafers W and the temperature change before and after the wafers W are put in. As the number of wafers W increases, the temperature change before and after the wafers W are put in becomes larger.

[0116] The temperature adjustment value in the temperature adjustment information is, for example, an offset value (°C) relative to a reference value of the phosphoric acid temperature, and specifically, a difference value between the temperature of the phosphoric acid treatment solution before and after the wafer W is placed in the treatment tank 61. The temperature adjustment information is obtained by, for example, measuring the difference between the temperature of the phosphoric acid treatment solution in the treatment tank 61 before the wafer W is immersed and the temperature of the phosphoric acid treatment solution in the treatment tank 61 after the wafer W is immersed, for a plurality of times while changing the number of wafers W.

[0117] The control unit 10 is implemented by, for example, a CPU, an MPU (Micro Processing Unit), a GPU (Graphics Processing Unit), etc. executing a program stored in the storage unit 9 using the RAM as a work area.

[0118] Furthermore, the control unit 10 may be realized by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

[0119] The control unit 10 includes an acquisition unit 10a, a concentration control unit 10b, and a temperature control unit 10c, and realizes or executes the functions and effects of the control processing described below. Figure 3 The structure shown may be any other structure as long as it is a structure for performing the control processing described later.

[0120] The acquisition unit 10a acquires information about the number of wafers W included in the lot scheduled to be processed from the management device 200 via the communication unit 8. The acquisition unit 10a acquires information about the number of wafers W included in the lot scheduled to be processed based on, for example, a front-opening FOUP F (see Figure 1 ) to obtain various information including the number of wafers W accommodated in the front-loading FOUP F from the management device 200. The above information obtained from the management device 200 is an example of management information obtained by establishing a correspondence between the identification information of the front-loading FOUP F and the number of substrates accommodated in the front-loading FOUP F.

[0121] The concentration control unit 10b obtains the amount of rinse liquid brought into the processing tank 61 together with the plurality of wafers W, i.e., the amount brought in, based on the number of wafers W acquired by the acquisition unit 10a, and adjusts the concentration of the phosphoric acid treatment solution based on the amount brought in. Specifically, the concentration control unit 10b performs a process of presetting the phosphoric acid concentration to be high in consideration of the decrease in phosphoric acid concentration caused by the introduction of the rinse liquid. At this time, the concentration control unit 10b can suppress the deviation of the etching amount between batches by setting the target concentration of the phosphoric acid treatment solution according to the number of wafers W immersed in the processing tank 61 at the same time. The details of the concentration control process of the phosphoric acid treatment solution in the concentration control unit 10b will be described later.

[0122] The temperature control unit 10c acquires a temperature adjustment value corresponding to the number of wafers W acquired by the acquisition unit 10a, and controls the heater 122 based on the temperature adjustment value to adjust the temperature of the phosphoric acid treatment solution. Specifically, the temperature control unit 10c performs a process of raising the temperature of phosphoric acid in advance in consideration of the decrease in the temperature of phosphoric acid caused by immersing the rinsed wafers W in the treatment tank 61. At this time, the temperature control unit 10c can suppress the variation of the etching amount between batches by setting the target temperature of the phosphoric acid treatment solution according to the number of wafers W immersed in the treatment tank 61 at a time. The details of the temperature control process of the phosphoric acid treatment solution in the temperature control unit 10c will be described later.

[0123] <Control Processing>

[0124] Next, refer to Figure 6 The process of cyclic etching according to the embodiment will be described. Figure 6 1 is a flowchart showing an example of a cyclic etching process performed by the substrate processing system 1 according to the embodiment.

[0125] First, the control unit 10 carries out a rinsing process by loading a batch into the processing tank 62 and immersing the wafers W in a rinsing liquid (step S101). In the first rinsing process, a rinsing liquid containing hydrofluoric acid may be used for the rinsing process.

[0126] Next, the control unit 10 carries out the batch into the processing tank 61 to immerse the wafers W in the phosphoric acid processing solution for etching (step S102 ). The control unit 10 performs this process in a short time of, for example, 10 minutes or less.

[0127] Next, the control unit 10 determines whether the number of times (number of repetitions) of performing the rinsing process and the etching process has reached a predetermined set value (step S103). If the number of repetitions has reached the set value, the control unit 10 ends the processing of this flowchart. On the other hand, if the number of repetitions has not reached the set value, the control unit 10 returns the processing to step S101.

[0128] Thus, the substrate processing system 1 according to the embodiment performs cyclic etching in which a series of processes of rinsing followed by etching are repeated multiple times. By performing this cyclic etching, the etching rate between the top and bottom in the stacking direction can be made uniform in a highly stacked film.

[0129] In addition, the substrate processing system 1 does not necessarily need to perform cycle etching. The substrate processing system 1 only needs to perform a series of processing steps of performing a rinse process followed by an etching process at least once.

[0130] Next, refer to Figure 7The process of the concentration control processing involved in the embodiment is described. Figure 7 1 is a flowchart showing an example of a procedure of a concentration control process executed by the substrate processing system 1 according to the embodiment. Figure 7 The processing in the process is performed before the wafer W is carried into the processing tank 61. Specifically, the process starts when the wafer W is immersed in the processing tank 62 and the rinsing process is started.

[0131] First, the acquisition unit 10a acquires the number of wafers W included in the batch carried into the processing tank 61 based on the management information acquired from the management device 200 (step S201). That is, the acquisition unit 10a acquires the number of wafers W corresponding to the identification information of the front-opening FOUP F that accommodates the wafers W constituting the batch carried into the processing tank 61 from the management information.

[0132] Next, the density control unit 10 b acquires the carry-in amount and the density adjustment value corresponding to the number of wafers W acquired by the acquisition unit 10 a in step S201 , using the density adjustment information stored in the density adjustment information storage unit 9 a (step S202 ).

[0133] Next, the density control unit 10b determines a target density based on the density adjustment value acquired in step S202 (step S203). Specifically, the density control unit 10b determines a density obtained by adding a density adjustment value (offset value) to a predetermined process density as the target density.

[0134] Next, the concentration control unit 10b determines whether the amount of carryover obtained in step S202 is below a predetermined threshold value (step S204). In the case where it is determined that the amount of carryover is below the threshold value in the process (step S204: "Yes"), the concentration control unit 10b controls the gas ejection unit 140 to eject gas at a first flow rate (step S205). On the other hand, in the case where the amount of carryover exceeds the threshold value in step S204 (step S204: "No"), the concentration control unit 10b controls the gas ejection unit 140 to eject gas at a second flow rate greater than the first flow rate (step S206). The second flow rate refers to a flow rate that enables the concentration of the phosphoric acid treatment solution to reach a target concentration before the rinsing process is completed.

[0135] Here, a specific example of the processing from step S204 to step S206 is described. For example, it is assumed that when the gas ejection unit 140 ejects gas at a first flow rate, 10 mL / min of water can be evaporated. Figure 7 When the time from the start of the process to the completion of the flushing process) is 2 minutes, 200 mL of water can be evaporated by the first flow rate, so the threshold is set to 200 mL.

[0136] In step S204, the concentration control unit 10b determines whether the amount of water carried in is less than 200 mL. When the amount of water carried in is less than 200 mL, water equivalent to the amount of water carried in can be evaporated by ejecting gas at the first flow rate, so in step S205, the concentration control unit 10b controls the gas ejection unit 140 to eject gas at the first flow rate. On the other hand, when the amount of water carried in is greater than 200 mL, water equivalent to the amount of water carried in cannot be evaporated by the first flow rate, so the concentration control unit 10b controls the gas ejection unit 140 to eject gas at a second flow rate greater than the first flow rate.

[0137] According to this process, the concentration of the phosphoric acid treatment solution in the treatment tank 61 can be adjusted to a concentration that takes the amount of phosphoric acid treatment solution into consideration before the rinsing process is completed. Therefore, a decrease in throughput can be prevented in the rinsing process and the etching process.

[0138] Next, the concentration control unit 10b measures the concentration of the phosphoric acid treatment solution using the concentration sensor 114 (step S207).

[0139] Next, the concentration control unit 10b determines whether the concentration of the phosphoric acid treatment solution acquired in step S207 is equal to or higher than the target concentration determined in step S203 (step S208). If the concentration of the phosphoric acid treatment solution is equal to or higher than the target concentration, the concentration control unit 10b causes the process to proceed to step S209. On the other hand, if the concentration of the phosphoric acid treatment solution is lower than the target concentration, the concentration control unit 10b causes the process to return to step S207.

[0140] Next, the concentration control unit 10b determines whether the ejection flow rate of the gas ejected by the gas ejection unit 140 is the second flow rate (step S209). If the ejection flow rate of the gas is the second flow rate (step S209: "Yes"), the concentration control unit 10b controls the gas ejection unit 140 to change the ejection flow rate of the gas to the first flow rate (step S210). On the other hand, if the ejection flow rate of the gas is not the second flow rate (step S209: "No"), the concentration control unit 10b advances the process to step S211.

[0141] Next, the concentration control unit 10b controls the DIW supply unit 130 to start replenishing DIW (step S211). According to this process, after the concentration of the phosphoric acid treatment solution reaches the target concentration, the phosphoric acid concentration can be kept constant.

[0142] As described above, when the amount of gas taken in exceeds the threshold value, the concentration control unit 10b ejects the gas at the second flow rate while the phosphoric acid concentration measured by the concentration sensor 114 is less than the target concentration. Furthermore, when the phosphoric acid concentration measured by the concentration sensor 114 becomes equal to or higher than the target concentration, the concentration control unit 10b changes the ejection flow rate of the gas from the second flow rate to the first flow rate.

[0143] In addition, the concentration control unit 10b stops the water replenishment by the DIW supply unit 130 (an example of a water replenishment unit) to the treatment tank 61 during the period when the phosphoric acid concentration measured by the concentration sensor 114 is lower than the target concentration. Furthermore, the concentration control unit 10b controls the DIW supply unit 130 to replenish water to the treatment tank 61 when the phosphoric acid concentration measured by the concentration sensor 114 becomes higher than the target concentration.

[0144] Next, refer to Figure 8 The procedure of the temperature control process according to the embodiment will be described. Figure 8 1 is a flowchart showing an example of a procedure of a temperature control process executed by the substrate processing system 1 according to the embodiment. Figure 7 The processing in the process is performed before the wafer W is carried into the processing tank 61. Specifically, the process starts when the wafer W is immersed in the processing tank 62 and the rinsing process is started.

[0145] First, the acquisition unit 10a acquires the number of wafers W included in the batch carried into the processing tank 61 based on the management information acquired from the management device 200 (step S301). That is, the acquisition unit 10a acquires the number of wafers W corresponding to the identification information of the front-opening FOUP F that accommodates the wafers W constituting the batch carried into the processing tank 61 from the management information.

[0146] Next, the temperature control unit 10c uses the temperature adjustment information stored in the temperature adjustment information storage unit 9b to obtain the temperature adjustment value corresponding to the number of wafers W obtained by the acquisition unit 10a in step S301. Then, the temperature control unit 10c determines the target temperature based on the obtained temperature adjustment value (step S302). Specifically, the temperature control unit 10c determines the temperature obtained by adding the temperature adjustment value (offset value) to the predetermined processing temperature as the target temperature.

[0147] Next, the temperature control unit 10c measures the temperature of the phosphoric acid treatment solution using the temperature sensor 113 (step S303).

[0148] Next, the temperature control unit 10c determines whether the temperature of the phosphoric acid treatment solution acquired in step S303 is equal to or higher than the target temperature determined in step S302 (step S304). When the temperature of the phosphoric acid treatment solution is equal to or higher than the target temperature (step S304: "Yes"), the temperature control unit 10c controls so as to reduce the output of the heater 122 (step S305). On the other hand, when the temperature of the phosphoric acid treatment solution is lower than the target temperature (step S304: "No"), the temperature control unit 10c controls so as to increase the output of the heater 122 (step S306).

[0149] Next, the temperature control unit 10c determines whether the etching process has started (step S307). If the etching process has started (step S307: "Yes"), the temperature control unit 10c ends the process of this flowchart. On the other hand, if the etching process has not started (step S307: "No"), the temperature control unit 10c returns the process to step S303. That is, the temperature control unit 10c continues the process of maintaining the temperature of the phosphoric acid treatment solution at the target temperature until the etching process starts.

[0150] <Modification>

[0151] In the above embodiment, the concentration control process performed by the concentration control unit 10b and the temperature control process performed by the temperature control unit 10c are described separately, but the concentration control process and the temperature control process may be performed together. Alternatively, only one of the processes may be performed.

[0152] In addition, in the above-mentioned embodiment, an example is described in which the concentration control process performed by the concentration control unit 10b is completed before the rinsing process of the wafer W is completed, but the timing of performing the concentration control process is not limited to the above-mentioned example. For example, the concentration control process may be performed during the etching process, and a waiting time may be set after the rinsing process or after the etching process, and the concentration adjustment process may be performed during the waiting time. In addition, the timing of performing the temperature control process is the same.

[0153] In addition, in the above-mentioned embodiment, as a method of adjusting the concentration of the phosphoric acid treatment solution, an example of adjusting the gas ejection flow rate of the gas ejection unit 140 and the DIW supply amount of the DIW supply unit 130 is described, but the method of adjusting the concentration of the phosphoric acid treatment solution is not limited to the above-mentioned method. For example, it is also possible to set the concentration control unit 10b to adjust the concentration of the phosphoric acid treatment solution by newly supplying a high-concentration phosphoric acid treatment solution to the treatment tank 61.

[0154] As described above, the substrate processing device involved in the embodiment (as an example, the substrate processing system 1) includes a rinse tank (as an example, the processing tank 62), a processing tank (as an example, the processing tank 61), an acquisition unit (as an example, the acquisition unit 10a), a concentration adjustment unit (as an example, the gas ejection unit 140) and a concentration control unit (as an example, the concentration control unit 10b). The rinse tank is a tank that stores a rinse liquid containing water, and the rinse tank rinses a plurality of substrates (as an example, wafers W) having an inorganic film by immersing them in the stored rinse liquid (as an example, a treatment liquid for rinsing treatment). The processing tank is a tank that stores a phosphoric acid treatment liquid (as an example, a phosphoric acid treatment liquid), and the processing tank etches a plurality of substrates by immersing the plurality of substrates after the rinse treatment in the stored phosphoric acid treatment liquid. The acquisition unit acquires the number of substrates immersed in the processing tank at the same time. The concentration adjustment unit adjusts the concentration of the phosphoric acid treatment liquid stored in the processing tank. The concentration control unit acquires the amount of rinse liquid brought into the processing tank together with the plurality of substrates based on the number of substrates acquired by the acquisition unit, and controls the concentration adjustment unit to adjust the concentration of the phosphoric acid treatment solution based on the amount of rinse liquid brought into the processing tank.

[0155] The substrate processing apparatus according to the embodiment obtains the amount of rinse liquid brought into the processing tank together with the plurality of substrates, i.e., the brought-in amount, based on the number of substrates simultaneously immersed in the processing tank storing the phosphoric acid processing liquid. Thereafter, the substrate processing apparatus according to the embodiment adjusts the concentration of the phosphoric acid processing liquid based on the brought-in amount.

[0156] According to this structure, the concentration adjustment process is performed so that even when the etching process is performed on the substrate after the rinse process, the main cause of the concentration change of the phosphoric acid treatment solution (the amount of the rinse solution introduced that varies according to the number of substrates immersed in the treatment tank at the same time) can be dealt with. Therefore, the etching process can be performed on the substrate after the rinse process at an appropriate concentration. In addition, even when the number of substrates to be etched at the same time is different, the deviation of the phosphoric acid concentration can be suppressed.

[0157] Therefore, according to the substrate processing apparatus according to the embodiment, in the technology of etching a plurality of substrates at a time using the phosphoric acid aqueous solution, it is possible to suppress variations in the etching amount.

[0158] It should be considered that all points of the embodiments disclosed this time are illustrative rather than restrictive. In fact, the above embodiments can be specifically implemented in a variety of ways. In addition, the above embodiments can also be omitted, replaced, and changed in various ways without departing from the attached claims and their gist.

[0159] Description of Reference Numerals

[0160] 1: substrate processing system; 7: control device; 8: communication unit; 9: storage unit; 9a: concentration adjustment information storage unit; 9b: temperature adjustment information storage unit; 10: control unit; 10a: acquisition unit; 10b: concentration control unit; 10c: temperature control unit; 11: sheet number measuring device; 61: processing tank; 62: processing tank; 63: substrate lifting mechanism; 111: inner tank; 111a: opening; 112: outer tank; 113: temperature sensor; 114: concentration sensor; 120: circulation path; 122: heater; 130: DIW supply unit; 140: gas ejection unit; W: wafer; F: front-opening wafer transfer box.

Claims

1. A substrate processing device, comprising: A rinsing tank storing a rinsing liquid containing water, wherein the rinsing tank performs a rinsing treatment on a plurality of substrates having inorganic films by immersing the plurality of substrates in the stored rinsing liquid; a processing tank storing a phosphoric acid treatment solution, wherein the processing tank performs an etching process on the plurality of substrates by immersing the plurality of substrates after the rinsing process in the stored phosphoric acid treatment solution; an acquisition unit configured to acquire the number of the substrates immersed in the processing tank at the same time; a concentration adjusting unit for adjusting the concentration of the phosphoric acid treatment solution stored in the treatment tank; as well as The concentration control unit acquires the amount of the rinse liquid brought into the processing tank together with the plurality of substrates based on the number of substrates acquired by the acquisition unit, and controls the concentration adjustment unit to adjust the concentration of the phosphoric acid treatment solution based on the amount brought into the processing tank.

2. The substrate processing apparatus according to claim 1, wherein: The concentration control unit causes the concentration adjustment unit to start adjusting the concentration of the phosphoric acid treatment solution before the etching process.

3. The substrate processing apparatus according to claim 1, wherein: The concentration control unit causes the concentration adjustment unit to complete concentration adjustment of the phosphoric acid treatment solution during the rinse process.

4. The substrate processing apparatus according to claim 1, wherein: A series of treatment processes of performing the etching treatment after the rinsing treatment is performed at least once.

5. The substrate processing apparatus according to claim 1, wherein: The apparatus further comprises a storage unit for storing information on the amount of brought-in obtained by preliminarily associating the number of the substrates with the amount of brought-in. The density control unit acquires the brought-in amount corresponding to the number of the substrates acquired by the acquisition unit using the brought-in amount information.

6. The substrate processing apparatus according to claim 1, wherein: The concentration adjusting unit includes a gas ejecting unit for ejecting gas into the processing tank. The concentration control unit adjusts the concentration of the phosphoric acid treatment solution by changing a discharge flow rate of the gas discharged from the gas discharge unit.

7. The substrate processing apparatus according to claim 6, wherein: When the brought-in amount is less than a threshold value, the concentration adjusting unit causes the gas to be ejected at a first flow rate, When the brought-in amount exceeds the threshold value, the concentration adjusting unit discharges the gas at a second flow rate greater than the first flow rate.

8. The substrate processing apparatus according to claim 7, further comprising: a measuring unit that measures the concentration of the phosphoric acid treatment solution stored in the treatment tank; and a storage unit for storing density adjustment information obtained by preliminarily associating the number of substrates with the density adjustment value; in, The density control unit acquires the density adjustment value corresponding to the number of the substrates acquired by the acquisition unit using the density adjustment information, and sets a target density based on the acquired density adjustment value. When the amount brought in exceeds the threshold value, during a period when the concentration of the phosphoric acid treatment solution measured by the measuring unit is less than the target concentration, the concentration control unit causes the gas to be ejected at the second flow rate, and when the concentration of the phosphoric acid treatment solution measured by the measuring unit becomes greater than the target concentration, the concentration control unit changes the ejection flow rate of the gas from the second flow rate to the first flow rate.

9. The substrate processing apparatus according to claim 8, wherein: It also includes a water replenishing unit for replenishing water to the treatment tank. During a period when the concentration of the phosphoric acid treatment solution measured by the measuring unit is less than the target concentration, the concentration control unit stops the water replenishment unit from replenishing the water to the treatment tank. When the concentration of the phosphoric acid treatment solution measured by the measuring unit becomes higher than the target concentration, the concentration control unit controls the water replenishment unit to replenish water to the treatment tank.

10. The substrate processing apparatus according to claim 1, further comprising: a temperature adjustment unit that adjusts the temperature of the phosphoric acid treatment solution stored in the treatment tank; and The temperature control unit acquires a temperature adjustment value according to the number of the substrates acquired by the acquisition unit, and controls the temperature adjustment unit based on the temperature adjustment value to adjust the temperature of the phosphoric acid treatment solution.

11. The substrate processing apparatus according to claim 10, wherein: The device further comprises a storage unit for storing temperature adjustment information in which the number of the substrates and the temperature adjustment value are preliminarily associated with each other. The temperature control unit acquires a temperature adjustment value corresponding to the number of the substrates acquired by the acquisition unit using the temperature adjustment information.

12. The substrate processing apparatus according to claim 10, wherein: The temperature control unit controls the temperature adjustment unit to adjust the temperature of the phosphoric acid treatment solution to a temperature obtained by adding the temperature adjustment value to a predetermined treatment temperature.

13. The substrate processing apparatus according to claim 1, wherein: The acquisition unit acquires the number of the substrates immersed in the processing tank based on management information, wherein the management information is information obtained by establishing a correspondence between identification information for identifying a front-opening wafer pod that can accommodate multiple substrates and the number of substrates accommodated in the front-opening wafer pod.

14. The substrate processing apparatus according to claim 1, wherein: The inorganic film is a nitride film.

15. A substrate processing method, comprising the following steps: Performing a rinsing treatment on the plurality of substrates having the inorganic films by immersing the plurality of substrates in a rinsing tank storing a rinsing liquid containing water; performing etching treatment on the plurality of substrates by immersing the plurality of substrates after the rinsing treatment in a treatment tank storing a phosphoric acid treatment solution; Acquiring the number of the substrates immersed in the processing tank; as well as The amount of the rinse liquid brought into the processing tank together with the plurality of substrates is acquired based on the number of substrates acquired in the acquisition step, and the concentration of the phosphoric acid treatment solution stored in the processing tank is adjusted based on the amount brought into the processing tank.

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