Film forming apparatus, film forming method, and method for manufacturing electronic device

Abstract

A film forming method according to an embodiment includes: a first film forming step of forming a first film made of an organic material on a substrate using a mask; and a second film formation step for forming a second film comprising an inorganic material on the substrate using the mask common to the first film formation step.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus, a film forming method and a method for manufacturing an electronic device. Background Art

[0002] In the manufacture of an organic EL display device (organic EL display) and the like, a film is sometimes formed on a substrate by evaporating a deposition material onto the substrate. Patent document 1 discloses a film forming device that forms a film in a serial manner. In the film forming device disclosed in patent document 1, a plurality of connected vacuum chambers constitute a production line.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-145096 Summary of the invention

[0006] Problems to be solved by the invention

[0007] Sometimes, multiple layers of films of different types are formed on one substrate. If a production line as disclosed in Patent Document 1 is constructed for each film, the device may become larger.

[0008] An object of the present invention is to provide a technique for suppressing an increase in the size of an apparatus for film formation.

[0009] Solutions to Solve Problems

[0010] According to the present invention, there is provided a film forming method, the film forming method comprising:

[0011] A first film forming step of forming a first film made of an organic material on a substrate using a mask; and

[0012] In the second film forming step, a second film made of an inorganic material is formed on the substrate using the mask common to the first film forming step.

[0013] Effects of the Invention

[0014] According to the present invention, it is possible to suppress an increase in size of an apparatus for film formation. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram showing the structure of a film forming apparatus according to an embodiment.

[0016] Figure 2 It is a diagram schematically showing a cross-sectional structure of a substrate according to an embodiment.

[0017] Figure 3 It is a diagram schematically showing a cross-sectional structure of a substrate according to an embodiment.

[0018] Figure 4 It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0019] Figure 5A It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0020] Figure 5B It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0021] Fig. 6A It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0022] Figure 6B It is a schematic diagram schematically showing a planar structure of a light emitting element according to an embodiment.

[0023] Figure 7 It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0024] Figure 8 It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0025] Fig. 9 It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0026] Fig.10 It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment.

[0027] Fig.11 It is a schematic diagram schematically showing a cross-sectional structure of a light emitting element according to an embodiment. DETAILED DESCRIPTION

[0028] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the claims. Although a plurality of features are described in the embodiments, not all of these features are necessarily required for the invention, and a plurality of features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same or similar structures are marked with the same reference numerals, and repeated descriptions are omitted.

[0029] In each of the drawings, the X direction and the Y direction indicate horizontal directions, and the Z direction indicates a vertical direction. In order to facilitate the understanding of the drawings, some reference numerals may be omitted when a plurality of identical elements are shown.

[0030] <Implementation method 1>

[0031] <Film forming equipment>

[0032] Figure 1 3 is a schematic diagram showing the structure of a film forming apparatus 1 according to an embodiment. The film forming apparatus 1 is an apparatus for forming a film on a substrate 100. In the film forming apparatus 1, the substrate 100 is sequentially transported to the film forming block 301, and a film is formed on the substrate 100. Such a film forming apparatus is used, for example, in the manufacture of various elements of an organic EL display device. Alternatively, such a film forming apparatus is used for surface treatment such as coating and protective layer formation.

[0033] A plurality of processing chambers 303a to 303d and a mask storage chamber 305 are arranged in the film forming block 301. The plurality of processing chambers 303a to 303d perform processing relative to the substrate 100 around a conveying chamber 302 having an octagonal shape when viewed from above, and the mask storage chamber 305 stores masks before and after use. A conveying robot 302a for conveying the substrate 100 is arranged in the conveying chamber 302. The conveying robot 302a includes a manipulator for holding the substrate 100 and a multi-joint arm for moving the manipulator in the horizontal direction. In other words, the film forming block 301 is a cluster-type film forming unit in which a plurality of processing chambers 303a to 303d are arranged in a manner surrounding the conveying robot 302a. The processing chambers 303a to 303d perform prescribed processing on the substrate, respectively. In addition, in the following description, when the processing chambers 303a to 303d are not particularly distinguished, they are sometimes referred to as processing chambers 303. One or more processes are performed on the substrate in each processing chamber 303. The processes performed in the processing chamber 303 include alignment between the substrate and the mask, evaporation of the evaporation material onto the substrate via the mask, etching of the substrate, cleaning of the substrate, application of liquid to the substrate, measurement of the substrate, etc.

[0034] In the conveying direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a transfer chamber 308 are respectively arranged on the upstream and downstream sides of the film forming block 301. During the manufacturing process, each chamber is maintained in a vacuum state. Figure 1 Only one film forming block 301 is shown in the figure, but the film forming device 1 of this embodiment has a plurality of film forming blocks 301, and has a structure in which the plurality of film forming blocks 301 are connected by a connecting device consisting of a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308. In addition, the structure of the connecting device is not limited thereto, and for example, it may be composed of only the buffer chamber 306 or the delivery chamber 308.

[0035] The transfer robot 302a delivers substrates 100 from the upstream delivery chamber 308 to the transfer chamber 302, transfers substrates 100 between processing chambers 303, transfers masks between the mask storage chamber 305 and the processing chamber 303, and sends substrates 100 from the transfer chamber 302 to the downstream buffer chamber 306.

[0036] The buffer chamber 306 is a chamber for temporarily storing substrates 100 according to the operating conditions of the film forming apparatus 1. The buffer chamber 306 is provided with a substrate storage rack (also referred to as a box) having a multi-layer structure. The substrate storage rack can store a plurality of substrates 100 in a horizontal state with the processed surface (film forming surface) of the substrate 100 facing downward in the direction of gravity, and a lifting mechanism. The substrate storage rack is raised and lowered so as to align the layer of the substrate 100 sent in or out with the conveying position. In this way, a plurality of substrates 100 can be temporarily stored in the buffer chamber 306 and allowed to stay.

[0037] The swirl chamber 307 is provided with a device for changing the orientation of the substrate 100. In the present embodiment, the swirl chamber 307 rotates the orientation of the substrate 100 by 180 degrees by a conveying robot 307a provided in the swirl chamber 307. The conveying robot 307a provided in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and transfers it to the delivery chamber 308, thereby exchanging the front end and the rear end in the conveying direction (arrow direction) of the substrate 100 in the buffer chamber 306 and the delivery chamber 308. Thus, the orientation when the substrate 100 is fed into the film forming chamber 303 becomes the same orientation in each film forming block 301, and therefore, the scanning direction of the film forming relative to the substrate 100 and the orientation of the mask can be made consistent in each film forming block 301. By adopting such a structure, the orientation of the mask set to the mask storage chamber 305 in each film forming block 301 can be made consistent, the management of the mask can be simplified, and the usability can be improved.

[0038] The delivery chamber 308 is a chamber for delivering the substrate 100 delivered by the delivery robot 307a of the whirlpool chamber 307 to the delivery robot 302a of the downstream film forming block 301. The film thickness of the film formed on the substrate 100 can also be measured in the delivery chamber 308 as needed. That is, the delivery chamber 308 can also be an inspection chamber for inspecting the film formed on the substrate 100.

[0039] The control system of the film forming device 1 includes a host device 300 that controls the entire production line as a main computer, and control devices 309, 310, 311, and 313a to 313d that control each component, and these devices can communicate via a wired or wireless communication line 300a. The control devices 313a to 313d are arranged corresponding to the film forming chambers 303a to 303d, and control the film forming device 1 described later. The control device 309 controls the conveying robot 302a. The control device 310 controls the conveying robot set in the whirlpool chamber 307. The control device 311 controls the equipment that performs alignment and film thickness measurement in the delivery chamber 308. The host device 300 transmits information on the substrate 100 and instructions on conveyance timing to each control device 309 , 310 , 311 , 313 a to 313 d , and each control device 309 , 310 , 311 , 313 a to 313 d controls each component based on the received instructions.

[0040] <Film Formation Method>

[0041] use Figure 2 The film forming method of this embodiment will be described. Figure 2 Step S2a represents a step of arranging the substrate 100 and the mask 102 in the processing chamber 303. The mask 102 is arranged facing the substrate 100 along the film forming surface of the substrate 100. At this time, alignment may be performed to adjust the positions of the substrate 100 and the mask 102. In the case where the film forming position of the substrate is not restricted, alignment is not performed.

[0042] Figure 2 Steps S2b to S2c represent steps of forming a film on the substrate 100 via the mask 102 in the processing chamber 303. The mask 102 has an opening. The material constituting the film is attached or deposited on the substrate through the opening of the mask 102, thereby forming a film on the substrate. As the method used, liquid coating such as evaporation, sputtering, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), ADL (Atomic Layer Deposition) or inkjet method is used.

[0043] exist Figure 2 In step S2b, a film 110 is formed on the substrate 100. The film 110 is a film made of an organic material. Figure 2 In step S2c, a film 112 is formed on the substrate 100. The film 112 is a film made of an inorganic material. A typical inorganic material is a metal. The mask 102 used when forming the film 110 is also used when forming the film 112. That is, the film 110 and the film 112 are formed on the substrate via the common mask 102.

[0044] In order to perform such a film forming method, the film forming device may include a plurality of film forming sources of different materials in one chamber. For example, if it is a vapor deposition device, both an evaporation source of an organic material and an evaporation source of a metal material may be provided in one chamber. Of course, it is also possible to adopt a structure in which the substrate 100 and the mask 102 are transported in a plurality of chambers in an overlapping state. Alternatively, in an in-line film forming device, it is also possible to adopt a structure in which both an organic film forming source and a metal film forming source are configured in one production line.

[0045] In the film forming method described above, Figure 2 During the period from step S2b to step S2c, the relative position of the substrate 100 and the mask is fixed. As a modified example, the position of the substrate 100 and the mask 102 may be adjusted during the period from the end of step S2b to the start of step S2c. By setting in this way, the film 110 and the film 112 can be formed at different positions on the substrate 100.

[0046] Alternatively, the order of film formation may be changed so that the film 112 made of an inorganic material is formed first, and then the film 110 made of an organic material is formed.

[0047] Thus, in this embodiment, a plurality of films of different types are formed on a substrate using a single mask. According to such a structure, it is possible to suppress the enlargement of the device compared with the case where a production line is constructed according to the type of film. In addition, even when the film forming method of this embodiment is used, a plurality of production lines can be constructed as needed.

[0048] <Another film forming method>

[0049] use Figure 3 Another film forming method of this embodiment is described below. Figure 3 In, with Figure 2 The same parts are marked Figure 2 The same reference numerals are used and repeated descriptions are omitted as appropriate.

[0050] Figure 3 The steps S3a to S3b shown in FIG. Figure 2 The steps S2a to S2b are the same as those shown in FIG.

[0051] exist Figure 3In step S3c, a film 114 is formed on the substrate 100. The film 114 is a film made of an inorganic material. In the example of the present film forming method, the film 110 and the film 114 are formed using a common mask, but the two are formed at different positions on the substrate 100. Specifically, the film 114 is not formed on at least a portion of the region where the film 110 is formed, or at least a portion of the film 114 is formed in a region where the film 110 is not formed, or the film 114 is not formed on at least a portion of the region where the film 110 is formed and at least a portion of the film 114 is formed in a region where the film 110 is not formed. According to such a structure, the step of adjusting the position of the substrate 100 and the mask 102 can be omitted between the two film forming steps. Therefore, the process can be simplified.

[0052] A method of forming the film 110 and the film 114 at different positions will be described in detail.

[0053] (1) First, the film forming method can be changed. The film 110 is formed by any one of evaporation, sputtering, CVD, PVD, ADL, and liquid coating, while the film 114 is formed by another of the above methods. In these methods, the degree of detour relative to the opening of the mask 102 is different from each other. Therefore, by using any two different film forming methods, even when the film is formed through a common mask, the film 110 and the film 114 are formed at different positions on the substrate 100. In addition, film forming methods other than the above can also be used.

[0054] In such Figure 3 When the substrate 100 and the mask 102 are arranged at a distance from each other in this manner, in a method in which the material has high straightness, the material adheres and accumulates in a range substantially the same as the region obtained by projecting the opening. In contrast, in a method in which the material has low straightness, the material easily diffuses, thereby forming a film diffused to the outside of the region obtained by projecting the opening.

[0055] For example, in the case of forming the film 114 in a larger range than the film 110, the film 110 can be formed by vapor deposition, and the film 114 can be formed by sputtering. In the film formation by sputtering, there is a tendency for the material to detour more than that by vapor deposition. Therefore, the film 114 can be formed in a larger range than the film 110. As another example of forming the film 114 in a larger range than the film 110, the film 110 can be formed by vapor deposition, and the film 114 can be formed by CVD. In the film formation by CVD, there is a tendency for the material to detour more than that by vapor deposition. Similarly, the film 110 can be formed by vapor deposition, and the film 114 can be formed by ADL. In the film formation by ADL, there is a tendency for the material to detour more than that by vapor deposition. In these examples, vapor deposition is cited as a method with high straightness of the material. However, the straightness of the material is relative, and the film 110 can also be formed by a film forming method other than vapor deposition.

[0056] Even when the substrate 100 and the mask 102 are in close contact, the material of the film 110 formed first easily enters between the substrate 100 and the mask 102 , so the film 110 and the film 114 are formed at different positions on the substrate 100 .

[0057] (2) As another method, various parameters in film formation can be changed while using a single film formation method. The parameters include the pressure in the chamber, the substrate temperature, the temperature around the substrate, the amount of material released, and the like.

[0058] For example, when both the film 110 and the film 114 are formed by evaporation, the pressure (the vacuum degree of the vacuum chamber) can be changed. The higher the pressure in the chamber, in other words, the lower the vacuum degree, the smaller the mean free path of the material in the gas state. In other words, the material is easy to diffuse. Therefore, by performing evaporation at a higher pressure, the film can be formed over a larger area. As a specific example, if the pressure in the chamber is 10 －5 The film 110 is formed by evaporation in a chamber with a pressure of about 10 Pa. －3 When the film 114 is formed by vapor deposition in a chamber at a pressure of about 1000 Pa, the film 114 is formed over a larger area than the film 110. In addition, which of the film 110 and the film 114 is formed over a relatively larger area can be appropriately selected according to the purpose of film formation.

[0059] Of course, in the formation of the film 110 and the formation of the film 114, different film forming methods may be implemented under different conditions. －5 The film 110 is formed by evaporation in a chamber with a pressure of about 10 Pa. －1 The film 110 is formed by sputtering in a chamber with a pressure of about 200 Pa. In this example, the film 114 can be formed in a wider range.

[0060] When CVD is performed under atmospheric pressure, the degree of diffusion of the material varies depending on the temperature difference in the chamber. Therefore, by performing film formation at different temperatures, the film 110 and the film 114 can be formed in different regions. For other parameters, the film 110 and the film 114 can also be formed in different regions by appropriately changing the film formation conditions.

[0061] (3) In the formation of the film 110 and the film 114, even when the same film forming method is used under the same conditions, by using materials with different mean free paths, the film 110 and the film 114 can be formed in different regions. By using a material with a large molecular weight, the mean free path can be reduced. For example, when it is desired to form the film 114 as a metal film in a larger range, a material with a larger atomic number such as silver or gold can be used compared to aluminum or magnesium.

[0062] The above description has been given of an example in which the film 114 is formed in a larger area than the film 110. By changing the above method, the film 114 can be formed in a smaller area than the film 110.

[0063] According to the method described above, the film 110 and the film 114 are formed through a common mask, but the two are formed at different positions on the substrate 100. With such a structure, it is possible to form films for a wider range of applications.

[0064] <Implementation method 2>

[0065] Another embodiment will be described. This embodiment is a film forming method applied to the manufacture of a light emitting element mounted on an organic EL display device, etc. In addition, the film forming method described below can also be applied to film forming purposes other than the manufacture of a light emitting element.

[0066] use Figure 4 The film forming method of this embodiment will be described. Figure 4 Each of steps S4a to S4d schematically shows a cross-sectional structure of a light emitting element. Reference numerals for various parts of a light emitting element may be given when the part is first shown in a drawing and may be omitted from the next drawing.

[0067] exist Figure 4In step S4a, a substrate 100 and an anode electrode 401, a cathode contact portion 403 and a bank 405 formed on the substrate 100 are shown. The substrate 100 is a glass substrate on which a TFT (Thin Film Transistor) is formed. Alternatively, the substrate 100 may also be a silicon wafer on which a semiconductor element is formed. The substrate 100 is simplified in the figure, but a plurality of films and elements are formed on the substrate 100 through a previous process. The anode electrode 401 and the cathode contact portion 403 are both made of metal materials such as tungsten and aluminum. When the anode electrode 401 and the cathode contact portion 403 are made of the same material, they can be formed in the same patterning process. The material of the anode electrode 401 and the material of the cathode contact portion 403 may also be different. The cathode contact portion 403 is connected to the cathode electrode in a subsequent process. An organic film (a film made of an organic material) including one or more layers of a light-emitting layer is formed between the anode electrode 401 and the cathode electrode. Through such a structure, current is injected into the light-emitting layer, and the light-emitting material in the light-emitting layer can emit light. The bank 403 electrically insulates light emitting elements from each other or from the anode electrode 401 and the cathode electrode of the light emitting element.

[0068] exist Figure 4 In step S4b of the embodiment, the mask 102 is overlapped on the substrate 100. When a film is to be formed on a specific region, the substrate 100 and the mask 102 are aligned at this time. In this embodiment, the substrate 100 and the mask 102 are aligned in order to form a film in a region surrounded by the bank 405. When a film is formed on substantially the entire substrate 100, alignment is not required.

[0069] exist Figure 4 In step S4c, a light-emitting layer 407 is formed on the substrate 100 via a mask 102. The light-emitting layer 407 is an organic film. The light-emitting layer 407 includes a main material and a doping material, both of which are known organic materials. In the present embodiment, the light-emitting layer 407 is formed by vapor deposition. In addition, known film forming methods such as sputtering, CVD, and inkjet can also be used. The light-emitting layer 407 is formed to contact the anode electrode 401. On the other hand, the light-emitting layer 407 is separated from the cathode contact portion 403. The film forming method and the conditions used here are selected in such a way that the light-emitting layer 407 is formed at such a position. For example, in the case of vapor deposition, it is preferably set to a lower pressure (higher vacuum degree) in order to improve the straightness of the material. Thus, the light-emitting layer 407 can be formed in the area obtained by projecting the shape of the opening of the mask 102. Since the vapor deposition material detours between the mask 102 and the substrate 100, the light-emitting layer 407 is sometimes formed outside the projection of the opening of the mask 102. To deal with such detour of the vapor deposition material, a possible measure is to increase the width of the bank 405 .

[0070] In addition, one or more organic layers may be formed separately from the light-emitting layer 407 as required. In a typical light-emitting element, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, etc. are formed. These layers are formed by vapor deposition through a mask 102 in the same manner as the light-emitting layer 407.

[0071] exist Figure 4 In step S4d, a cathode electrode 409 is formed on the substrate 100 via a mask 102. The cathode electrode 409 is a metal film. The cathode electrode 409 is made of magnesium, silver, gold, aluminum, tantalum, tungsten, molybdenum, nickel, or an alloy containing at least one of them. In the present embodiment, the cathode electrode 409 is also formed outside the area obtained by projecting the opening of the mask 102. In detail, the cathode electrode 409 is first formed at a position covering the light-emitting layer 407. Then, the cathode electrode 409 extends in a manner that contacts the cathode contact portion 403. As can be seen from the figure, the cathode contact portion 403 is located outside the area obtained by projecting the opening of the mask 102. By forming the cathode electrode 409 at a position different from the light-emitting layer 407 while using the mask 102 common to the light-emitting layer 407, the cathode electrode 409 can be connected to the cathode contact portion 403.

[0072] As a specific method for this purpose, any of the methods described in the above embodiments, such as (1) changing the film formation method, (2) changing various parameters in film formation, and (3) using materials with different mean free paths, can be applied.

[0073] In one example, the cathode electrode 409 is formed on the substrate 100 by evaporation. Furthermore, the pressure in the chamber during the evaporation of the cathode electrode 409 is made higher than the pressure in the chamber during the evaporation of the light-emitting layer 407. In another example, the light-emitting layer 407 is formed by evaporation, and the cathode electrode 409 is formed by sputtering. Alternatively, the respective materials may be selected so that the mean free path of the material of the light-emitting layer 407 is longer than the mean free path of the material of the cathode electrode 409 under the same conditions. In the case of utilizing the difference in the mean free path of the materials, the film forming conditions of the two steps may be completely the same.

[0074] Since alignment is not performed between the step of forming the light emitting layer 407 and the step of forming the cathode electrode 409, the production capacity can be improved. However, in order to change the region where the cathode electrode 409 is formed, a step of changing the relative position of the substrate 100 and the mask 102 and an alignment step may be included between the step of forming the light emitting layer 407 and the step of forming the cathode electrode 409. In the case where the cathode electrode 409 is not formed on a part of the light emitting layer 407, changing the relative position of the substrate 100 and the mask 102 is effective.

[0075] In addition, the structure of the light-emitting element may be changed so that the cathode electrode 409 can be easily formed in a wider range. Figure 5A and Figure 5B Each schematically shows the cross-sectional structure of the light-emitting element. Figure 4 The same part, in Figure 5A and Figure 5B In the middle, mark and Figure 4 The same reference numerals are used, or reference numerals are omitted for simplicity. Figure 5A In the light emitting element shown, the height of the bank 405a between the anode electrode 401 and the cathode contact portion 403 is lower than the height of the other banks 405. As a result, the degree of obstruction of the bank 405a to the diffusion of materials is reduced, and the cathode electrode 409 can be formed in a wider range. Figure 5B The light-emitting element shown has a structure in which no bank is formed between the anode electrode 401 and the cathode contact portion 403 .

[0076] Thus, in this embodiment, a plurality of films of different types are formed on a substrate using a single mask. According to such a structure, it is possible to suppress the enlargement of the device compared with the case where a production line is constructed according to the type of film. In addition, even when the film forming method of this embodiment is used, a plurality of production lines can be constructed as needed.

[0077] <Implementation method 3>

[0078] Another embodiment will be described. This embodiment is a film forming method applied to the manufacture of a light emitting element mounted on an organic EL display device, etc. In addition, the film forming method described below can also be applied to film forming purposes other than the manufacture of a light emitting element.

[0079] First, use Fig. 6A and Figure 6B The light-emitting element to be manufactured will be described. Fig. 6A The cross-sectional structure of the light-emitting element is schematically shown. Figure 6B The planar structure of the light emitting element is schematically shown. Figure 1 to Figure 5B The same reference numerals as in these figures are used to mark the parts with the same functions. Figure 1 to Figure 5B The description of the parts with the same functions may be omitted because they overlap with the above description. That is, all the descriptions related to the first and second embodiments are also applicable to this embodiment.

[0080] The light-emitting element of this embodiment includes a plurality of pixels that emit light of different wavelengths. Specifically, the light-emitting layer 407R emits red light, the light-emitting layer 407G emits green light, and the light-emitting layer 407B emits blue light. With such a structure, a so-called RGB display can be formed. In addition to pixels of these colors, the light-emitting element may also include pixels that emit white light. Alternatively, the light-emitting element may also include pixels of only one color or two colors.

[0081] In the light emitting element of this embodiment, a passivation film 411 is formed to cover the bank 405 and the cathode electrode 409. The passivation film 411 is made of silicon nitride. The passivation film reduces the penetration of water into the organic layer and the electrode layer formed thereunder or suppresses the reaction with these films during the manufacturing process to protect these films. A resin layer 413 and a protective film 415 are formed above the passivation film 411.

[0082] like Figure 6B As shown, in the plane, the blue light emitting layer 407B has the largest area. Next, the green light emitting layer 407G has the second largest area. The red light emitting layer 407R has the smallest area. The relationship between these areas can be appropriately changed according to the light emitting efficiency of the light emitting layer 407 of each color.

[0083] Next, use Figure 7 to Figure 11 The film forming method of this embodiment is described. The film forming method of this embodiment is different from Embodiment 1 and Embodiment 2 in that a mask is formed by photolithography. In addition, for the sake of simplicity, the following drawings are appropriately omitted. Fig. 6A and Figure 6B The same reference numerals are used for parts of the structure shown.

[0084] exist Figure 7 In step S7a, a passivation film 411 is formed on the substrate 100. In this embodiment, the passivation film 411 is formed by CVD. The passivation film 411 covers the anode electrode 401, the cathode contact portion 403, and the bank 405. The passivation film 411 is formed on the entire surface of the substrate 100.

[0085] exist Figure 7 In step S7b, a resist 701 for photolithography is applied to the substrate 100. After the resist is applied, drying and baking treatments are performed as needed.

[0086] exist Figure 7 In step S7c, photolithography is performed to expose a portion of the resist 701 (photosensitive portion 701a) to light. A positive resist 701 is used here, so the photosensitive portion 701a is removed in the subsequent development step. When a negative resist is used, the portion to be exposed to light and the portion not to be exposed to light can be exchanged.

[0087] exist Figure 8 In step S8a, the photosensitive resist 701 is developed. The photosensitive portion 701a is removed by development. Here, the portion of the resist 701 that is removed is the portion above the anode electrode 401 of one of the three color pixels. The anode electrodes 401 of the other two pixels of the three color pixels are also covered by the resist 701 after development. In addition, the developed resist 701 covers the cathode contact portion 403.

[0088] exist Figure 8 In step S8b, the passivation film 411 is etched. In the etching of the passivation film 411, the resist 701 is used as a mask. That is, the portion of the passivation film 411 not covered by the resist 701 is removed by etching. Thus, the anode electrode 401 is exposed. In addition, in the present embodiment, by performing nearly isotropic etching, a portion of the passivation film 411 covered by the resist 701 is removed. Thus, after etching, the resist 701 is in a state of protruding from the passivation film 411 in the planar direction. By making the resist 701 extend, the passivation film 411 exposes the cathode contact portion 403. That is, when viewed from above, the cathode contact portion 403 is covered by the resist 701 but not by the passivation film 411. By adopting such a structure, when the light emitting layer 407 and the cathode electrode 409 are formed using the resist 701 as a common mask, the light emitting layer 407 can be prevented from being in contact with the cathode contact portion 403, while the cathode electrode 409 can be in contact with the cathode contact portion 403. In addition, the passivation film 411 remains in a state of covering the anode electrode 401 and the cathode contact portion 403 of other pixels.

[0089] Next, in Fig. 9 In step S9a, the light emitting layer 407 is formed. In this embodiment, the light emitting layer 407 is formed by vapor deposition. At this time, the resist 701 is used as a mask. It is not limited to vapor deposition, as long as the film is formed by a method with a relatively high straightness of the material compared to the subsequent formation step of the cathode electrode 409. Preferably, the light emitting layer 407 is formed in an area substantially the same as the projection of the opening of the resist 701.

[0090] exist Fig. 9 In step S9b, cathode electrode 409 is formed. In this embodiment, cathode electrode 409 is formed by vapor deposition. At this time, resist 701 is used as a mask. It is not limited to vapor deposition, as long as the film is formed by a method with relatively higher diffusion of the material compared with the previous formation step of light-emitting layer 407. Cathode electrode 409 is formed in a range larger than the projection of the opening of resist 701. As a result, cathode electrode 409 is also formed on cathode contact portion 403.

[0091] As the film forming methods used for forming the light emitting layer 407 and the cathode electrode 409, all the methods described in Embodiment 2 are applicable. For example, when the cathode electrode 409 is formed by evaporation, the pressure of the chamber when the cathode electrode 409 is formed is higher than the pressure of the chamber when the light emitting layer 407 is formed. In addition, the cathode electrode 409 may be formed by CVD or sputtering.

[0092] Here, the resist 701 is used as a mask. Under certain conditions, the outer edge of the cathode electrode 409 is sometimes defined by the passivation film 411. Therefore, it can also be considered that Fig. 9 In step S9b, the resist 701 and the passivation film 411 are integrally used as a mask.

[0093] exist Fig.10 In step S10a, a passivation film 411a is formed by CVD. The passivation film 411a is formed to cover the cathode electrode 409 formed in the previous step. The passivation film 411a is preferably formed by Figure 7 The passivation film 411a formed in step S7a is formed in the same manner as the passivation film 411a formed in this step and the passivation film 411 formed in the previous step and remaining after etching are collectively referred to as the passivation film 411.

[0094] exist Fig.10 In step S10b, the resist 701 is peeled off from the substrate 100. The light emitting layer 407 and the cathode electrode 409 formed on the resist 701 are peeled off. As a result, the passivation film 411 is exposed on the surface of the substrate 100. The portion of the passivation film 411 formed in the opening of the resist 701 may be a concave portion or a convex portion relative to other portions. The shape of the surface may be different, but the result is Fig.10 The substrate 100 in step S10b is Figure 7 The substrate 100 is in the same state as shown in step S7a.

[0095] Therefore, the same process is repeated for pixels of other colors. Figure 7 Steps S7b to Fig.10 The steps to step S10b are repeated. The repeated description is omitted. As a result, Fig.11 As shown in step S11a of the embodiment, light emitting layers 407R, 407G, and 407B of each color and cathode electrodes (reference numerals are omitted) thereon are formed. In addition, the cathode electrode of each pixel is covered with a passivation film 411 .

[0096] Next, if Fig.11As shown in step S11b, a resin layer 413 is formed. The resin layer 413 is formed for the purpose of planarization, etc. The resin layer 413 may be omitted as appropriate. Thereafter, a protective film 415 (see Fig. 6A and Figure 6B ).

[0097] Thus, in this embodiment, a plurality of films of different types are formed on a substrate using a single mask. According to such a structure, it is possible to suppress the enlargement of the device compared with the case where a production line is constructed according to the type of film. In addition, even when the film forming method of this embodiment is used, a plurality of production lines can be constructed as needed.

[0098] The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are attached to disclose the scope of the invention.

[0099] Description of Reference Numerals

[0100] 100: substrate, 102: mask, 110: film, 112: film.

Claims

1. A film forming method, characterized in that: The film forming method has the following features: A first film forming step of forming a first film made of an organic material on a substrate using a mask; as well as In the second film forming step, a second film made of an inorganic material is formed on the substrate using the mask common to the first film forming step.

2. The film forming method according to claim 1, characterized in that: In the first film forming step and the second film forming step, a resist patterned by photolithography is used as the mask.

3. The film forming method according to claim 2, characterized in that: The film forming method includes an etching step in which the third film formed on the substrate is etched through the patterned resist.

4. The film forming method according to claim 3, characterized in that: In at least one of the first film forming step and the second film forming step, the etched third film is used as a part of the mask.

5. The film forming method according to claim 3, characterized in that: The patterned resist protrudes in a planar direction relative to the third film after etching.

6. The film forming method according to claim 1, characterized in that: Prior to the first film forming step, an alignment step of adjusting the relative position of the mask and the substrate is provided.

7. The film forming method according to claim 6, characterized in that: During the period from the first film forming step to the second film forming step, the relative position of the mask and the substrate is fixed.

8. The film forming method according to claim 6, characterized in that: Between the first film forming step and the second film forming step, there is an alignment step of adjusting the relative position of the mask and the substrate.

9. The film forming method according to claim 1, characterized in that: The first film and the second film are formed at positions different from each other.

10. The film forming method according to claim 1, characterized in that: In the first film forming step, any one of evaporation, sputtering, CVD, PVD, ADL, and liquid coating is used. In the second film forming step, a method different from that in the first film forming step is used, among vapor deposition, sputtering, CVD, PVD, ADL, and liquid coating.

11. The film forming method according to claim 10, characterized in that: In the first film forming step, the first film is formed by vapor deposition. In the second film forming step, the second film is formed by sputtering or CVD.

12. The film forming method according to claim 1, characterized in that: The film forming conditions in the first film forming step and the film forming conditions in the second film forming step are different from each other.

13. The film forming method according to claim 1, characterized in that: The pressure in the film forming chamber in the first film forming step and the pressure in the film forming chamber in the second film forming step are different from each other.

14. The film forming method according to claim 1, characterized in that: The mean free path of the organic material in the film forming chamber and the mean free path of the inorganic material in the film forming chamber are different from each other.

15. A method for manufacturing an electronic device, characterized in that: The method for manufacturing the electronic device comprises: A first film forming step of forming a light-emitting layer including an organic material on a substrate using a mask; as well as In the second film forming step, a first electrode layer including a metal material is formed on the substrate using the mask common to the first film forming step.

16. The method for manufacturing an electronic device according to claim 15, characterized in that: The first film forming step is performed on the substrate where the contact portion connected to the first electrode layer and the second electrode layer are exposed, The light emitting layer contacts the second electrode layer and is separated from the contact portion.

17. The method for manufacturing an electronic device according to claim 16, characterized in that: performing the second film forming step after the first film forming step, The first electrode layer contacts the contact portion.

18. The method for manufacturing an electronic device according to claim 17, characterized in that: In the first film forming step and the second film forming step, a resist patterned by photolithography is used as the mask.

19. The method for manufacturing an electronic device according to claim 18, characterized in that: The method for manufacturing an electronic device includes an etching step of etching the passivation film formed on the substrate through the patterned resist.

20. The method for manufacturing an electronic device according to claim 19, characterized in that: The patterned resist protrudes in a planar direction relative to the passivation film after etching, The patterned resist exposes at least a portion of the second electrode layer and covers the contact portion. The etched passivation film exposes both at least a portion of the second electrode layer and the contact portion.

21. A film forming device, characterized in that: The film forming device comprises: a first film forming unit that forms a first film made of an organic material on a substrate using a mask; as well as The second film forming member forms a second film made of an inorganic material on the substrate using the mask common to the first film forming member.

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