Waste gas pretreatment device and waste gas treatment system

Abstract

The invention provides a waste gas pretreatment device and a waste gas treatment system, the waste gas pretreatment device comprises: a reaction tower, the reaction tower comprises a waste gas inlet and an exhaust port respectively located at the bottom and the top of the reaction tower; the particle deposition tank is positioned at the bottom of the reaction tower and is communicated with the plurality of waste gas inlets; the particle filtering cotton layer is positioned above the particle deposition tank and is used for filtering solid particles in the waste gas; the bubble generator is positioned above the particle filter cotton layer and is used for separating the waste gas flow into bubbles; the alkali liquor reactor is positioned above the bubble generator and is used for removing acid gas in the waste gas; the activated carbon adsorption layer is positioned above the alkali liquor reactor and is used for adsorbing water vapor in the waste gas; and the combustion chamber is positioned above the activated carbon adsorption layer and is used for combusting waste gas and discharging combustion products through the exhaust port. According to the technical scheme, the processing pressure of the central processing system can be relieved, and damage of waste gas to the central processing system can be effectively reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an exhaust gas pretreatment device and an exhaust gas treatment system. Background Art

[0002] For semiconductor manufacturing, a lot of gaseous process byproducts, referred to as waste gases, are inevitably produced during the wafer process. This is harmful to the environment, and the waste gases generated during the wafer process need to be effectively treated and meet environmental emission standards before they can be discharged into the atmosphere.

[0003] The conventional treatment process is to transport the generated waste gas through pipelines to a central treatment system for unified treatment. After the central treatment system has completed the treatment of the waste gas and the environmental emission meets the standards, it will be discharged externally.

[0004] However, with the continuous development of semiconductor technology, more and more special gases are used in the wafer process, which also leads to the generation of more toxic, harmful, flammable, explosive and corrosive process waste gases in the process, which will cause great pollution to the environment and put enormous pressure on the processing capacity of conventional central processing systems; moreover, it also makes the transformation of the central processing system very difficult; this itself puts higher requirements on the processing system.

[0005] Therefore, it is necessary to provide a more effective and reliable technical solution that can not only reduce the processing pressure of the central treatment system, but also effectively reduce the damage of exhaust gas to the central treatment system, increase the overall service life of the central treatment system, and improve the processing efficiency of the central treatment system. Summary of the invention

[0006] The present application provides an exhaust gas pretreatment device and an exhaust gas treatment system, which can not only reduce the processing pressure of the central treatment system, but also effectively reduce the damage of the exhaust gas to the central treatment system, increase the overall service life of the central treatment system, and improve the processing efficiency of the central treatment system.

[0007] One aspect of the present application provides a waste gas pretreatment device, comprising: a reaction tower, the reaction tower comprising a waste gas inlet and an exhaust port respectively located at the bottom and top of the reaction tower; a particle sedimentation tank, located at the bottom of the reaction tower and connected to the plurality of waste gas inlets; a particle filter cotton layer, located above the particle sedimentation tank, filtering solid particulate matter in the waste gas; a bubble generator, located above the particle filter cotton layer, separating the waste gas flow into bubbles; an alkali solution reactor, located above the bubble generator, removing acidic gases from the waste gas; an activated carbon adsorption layer, located above the alkali solution reactor, adsorbing water vapor in the waste gas; a combustion chamber, located above the activated carbon adsorption layer, burning the waste gas and discharging the combustion products through the exhaust port.

[0008] In some embodiments of the present application, there are multiple exhaust gas inlets, which are evenly distributed along the circumference of the particle sedimentation trough, and the multiple exhaust gas inlets and the side walls of the particle sedimentation trough form an elevation angle of 45 degrees from the bottom of the particle sedimentation trough to the top of the particle sedimentation trough.

[0009] In some embodiments of the present application, a filter screen is provided on the top of the particle sedimentation tank.

[0010] In some embodiments of the present application, a reaction liquid outlet and an alkali liquid inlet are respectively provided at the top and bottom of the side wall of the alkali liquid reactor, and the reaction liquid outlet and the alkali liquid inlet are located on opposite sides of the alkali liquid reactor.

[0011] In some embodiments of the present application, a stirrer is provided in the alkali solution reactor.

[0012] In some embodiments of the present application, an acidity and alkalinity tester is provided in the alkali solution reactor.

[0013] In some embodiments of the present application, a plurality of evenly distributed filtered gas outlets are provided on the top of the activated carbon adsorption layer.

[0014] In some embodiments of the present application, a plurality of oxygen inlets are evenly distributed on the side wall of the combustion chamber.

[0015] In some embodiments of the present application, an ignition device is provided on the top of the combustion chamber.

[0016] In some embodiments of the present application, the inner wall of the exhaust port is coated with an anti-corrosion layer, and the outer wall of the exhaust port is wrapped with a constant temperature heating belt.

[0017] Another aspect of the present application also provides a waste gas treatment system, including: a number of semiconductor production equipment; a number of waste gas pretreatment devices as described above, which are respectively connected to the waste gas emission ports of the several semiconductor production equipment to pre-treat the waste gas emitted by the several semiconductor production equipment; and a waste gas central treatment system, which is connected to the exhaust ports of the several waste gas pretreatment devices to re-treat the pretreated exhaust gas.

[0018] The present application provides an exhaust gas pretreatment device and an exhaust gas treatment system, which can not only reduce the processing pressure of the central treatment system, but also effectively reduce the damage of the exhaust gas to the central treatment system, increase the overall service life of the central treatment system, and improve the processing efficiency of the central treatment system. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.

[0020] in:

[0021] Figure 1 is a structural schematic diagram of an exhaust gas treatment system;

[0022] Figure 2 This is a schematic diagram of the structure of the exhaust gas pretreatment device described in the embodiment of the present application;

[0023] Figure 3 This is a schematic diagram of the structure of the exhaust gas treatment system described in an embodiment of the present application. DETAILED DESCRIPTION

[0024] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0025] The technical solution of the present invention is described in detail below in conjunction with the embodiments and drawings.

[0026] Figure 1 Schematic diagram of the structure of an exhaust gas treatment system 100.

[0027] refer to Figure 1 As shown, the waste gas treatment system 100 includes a plurality of semiconductor production equipment 110 ; a waste gas central treatment system 120 , which is connected to the waste gas discharge ports of the plurality of semiconductor production equipment 110 , and treats the waste gas discharged by the plurality of semiconductor production equipment 110 .

[0028] However, with the continuous development of the field of semiconductor technology, more and more special gases are used in the wafer process, which also leads to the generation of more toxic, harmful, flammable, explosive and corrosive process waste gases in the process, which will cause great pollution to the environment, and put tremendous pressure on the processing capacity of the waste gas central treatment system 120 in the above-mentioned waste gas treatment system 100; it also creates great difficulty for the modification of the waste gas central treatment system 120; and puts higher requirements on the waste gas treatment system 100.

[0029] Based on this, the present application provides an exhaust gas pretreatment device and an exhaust gas treatment system, which can not only reduce the processing pressure of the central treatment system, but also effectively reduce the damage of exhaust gas to the central treatment system, increase the overall service life of the central treatment system, and improve the processing efficiency of the central treatment system.

[0030] Figure 2 The exhaust gas pretreatment device according to the embodiment of the present application is described in detail below in conjunction with the accompanying drawings.

[0031] The present application provides an exhaust gas pre-treatment device 200, referring to Figure 2 As shown, it includes: a reaction tower 210, the reaction tower 210 includes a waste gas inlet 211 and an exhaust port 212 respectively located at the bottom and top of the reaction tower 210; a particle sedimentation tank 220, located at the bottom of the reaction tower 210 and connected to the plurality of waste gas inlets 211; a particle filter cotton layer 230, located above the particle sedimentation tank 220, filtering solid particles in the waste gas; a bubble generator 240, located above the particle filter cotton layer 230, separating the waste gas flow into bubbles; an alkali liquid reactor 250, located above the bubble generator 240, removing acidic gases from the waste gas; an activated carbon adsorption layer 260, located above the alkali liquid reactor 250, adsorbing water vapor in the waste gas; a combustion chamber 270, located above the activated carbon adsorption layer 260, burning the waste gas and discharging the combustion products through the exhaust port 212.

[0032] The exhaust gas pretreatment device 200 described in the technical solution of the present application can provide a large-capacity exhaust gas pretreatment technology, effectively alleviate the processing pressure of the exhaust gas central treatment system, and improve the environmental emission indicators after exhaust gas treatment.

[0033] Continue to refer Figure 2 As shown, in some embodiments of the present application, there are multiple exhaust gas inlets 211, and the multiple exhaust gas inlets 211 are evenly distributed along the circumference of the particle deposition tank 220. The multiple exhaust gas inlets 211 and the side wall of the particle deposition tank 220 form a 45-degree elevation angle from the bottom of the particle deposition tank 220 to the top of the particle deposition tank 220. Figure 2 For example, the exhaust gas inlet 211 includes at least two intake pipes, which are arranged on the outer side wall of the bottom of the exhaust gas pretreatment device at an elevation angle of 45 degrees from bottom to top, specifically on the top of the side wall of the particle deposition tank 220.

[0034] The air inlet end of the waste gas inlet 211 is connected to the waste gas discharge port of the semiconductor production equipment, and the waste gas generated by the semiconductor production equipment is introduced into the waste gas pretreatment device 200 of the present application for pretreatment.

[0035] Continue to refer Figure 2 As shown, the particle sedimentation tank 220 is disposed at the bottom of the reaction tower 210 to contain solid particles in the exhaust gas.

[0036] In some embodiments of the present application, a filter screen (not shown) is disposed on the top of the particle sedimentation tank 220. The filter screen can be specifically disposed at the interface between the particle sedimentation tank 230 and the particle filter cotton layer 230.

[0037] In some embodiments of the present application, the particle sedimentation tank 220 is installed in a detachable and cleanable manner to facilitate removal and removal of solid particles.

[0038] Continue to refer Figure 2 As shown, the particle filter cotton layer 230 is located above the particle sedimentation tank 220 and is directly connected to the particle sedimentation tank 220. After the exhaust gas passes through the particle filter cotton layer 230, the solid particles will be blocked at the lower layer of the particle filter cotton layer 230 and fall into the particle sedimentation tank 220 under the action of gravity.

[0039] Continue to refer Figure 2 As shown, the bubble generator 240 is located above the particle filter cotton layer 230, has a built-in bubble generating device, and is directly connected to the top of the particle filter cotton layer 230. The bubble generator 240 is used to separate the exhaust gas flow into bubbles, and the exhaust gas after threshing passes through the bubble generator 240 to form tiny bubbles.

[0040] Continue to refer Figure 2 As shown, the alkali liquid reactor 250 is located above the bubble generator 240 and is used to remove acidic gas from the exhaust gas. The alkali liquid reactor 250 is connected to the bubble generator 240.

[0041] In some embodiments of the present application, the top and bottom of the side wall of the alkali liquid reactor 250 are respectively provided with a reaction liquid outlet 252 and an alkali liquid inlet 251, and the reaction liquid outlet 252 and the alkali liquid inlet 251 are located on opposite sides of the alkali liquid reactor 250. This design allows the alkali liquid to fully flow through the alkali liquid reactor 250.

[0042] In some embodiments of the present application, a stirrer (not shown in the figure) is provided in the alkali solution reactor 250. The stirrer can completely blend the tiny exhaust gas bubbles with the alkali solution.

[0043] In some embodiments of the present application, an acid-base tester (not shown) is provided in the alkali liquid reactor 250. The acid-base tester can monitor the acidity and alkalinity in the alkali liquid reactor 250 in real time, thereby adjusting the alkali liquid flow rate of the alkali liquid inlet 251. The alkali in the alkali liquid can contain sodium hydroxide, potassium hydroxide, or a mixture thereof, or it can be waste alkali liquid after wet etching.

[0044] Continue to refer Figure 2 As shown, the activated carbon adsorption layer 260 is located above the alkali liquid reactor 250, specifically arranged on the top of the alkali liquid reactor 250, and directly connected to the alkali liquid reactor 250. Activated carbon is laid inside the activated carbon adsorption layer 260 to adsorb macromolecules in the remaining exhaust gas and the water vapor carried.

[0045] In some embodiments of the present application, a plurality of evenly distributed filtered gas outlets 261 are provided on the top of the activated carbon adsorption layer 260. The plurality of filtered gas outlets 261 are circular fine gas outlets arranged in concentric circles, and are used to evenly spray the exhaust gas filtered by the activated carbon adsorption layer 260 into the internal space of the combustion chamber 270 to facilitate complete combustion.

[0046] Continue to refer Figure 2 As shown, the combustion chamber 270 is located above the activated carbon adsorption layer 260 and is used to burn the exhaust gas and discharge the combustion products through the exhaust port 212 .

[0047] In some embodiments of the present application, the combustion chamber 270 has a plurality of oxygen inlets 271 evenly distributed on the side wall. Specifically, the plurality of oxygen inlets 271 are evenly distributed along the circumference of the side wall of the combustion chamber 270. The plurality of oxygen inlets 271 are located in the middle of the side wall of the combustion chamber 270. The plurality of oxygen inlets 271 have a diameter of 3 / 8 to 1 / 2 inches and are used to provide a continuous oxygen supply to the combustion chamber 270 to ensure complete combustion of the remaining exhaust gas in the combustion chamber 270.

[0048] In some embodiments of the present application, an ignition device 272 is provided on the top of the combustion chamber 270. The ignition device 272 is distributed at multiple points to provide a complete ignition effect, so that the mixed gas in the combustion chamber 270 burns simultaneously to ensure the stability of combustion.

[0049] Continue to refer Figure 2 As shown, the exhaust port 212 is arranged above the combustion chamber 270 and located at the top of the reaction tower 210. The lower end of the exhaust port 212 is connected to the combustion chamber 270, and the upper end is connected to the exhaust gas central processing system.

[0050] In some embodiments of the present application, the inner wall of the exhaust port 212 is coated with an anti-corrosion layer, and the outer wall of the exhaust port 212 is wrapped with a constant temperature heating belt.

[0051] The exhaust gas pretreatment device 200 described in the technical solution of the present application can provide a large-capacity exhaust gas pretreatment technology, effectively alleviate the processing pressure of the exhaust gas central treatment system, and improve the environmental emission indicators after exhaust gas treatment.

[0052] Figure 3 This is a schematic diagram of the structure of the exhaust gas treatment system described in an embodiment of the present application.

[0053] The present application also provides an exhaust gas treatment system 300, referring to Figure 3 As shown, it includes: a number of semiconductor production equipment 310; a number of exhaust gas pretreatment devices 200 as described above, which are respectively connected to the exhaust gas discharge ports of the several semiconductor production equipment 310 to pretreat the exhaust gas discharged by the several semiconductor production equipment 310; and a central exhaust gas treatment system 320, which is connected to the exhaust ports 212 of the several exhaust gas pretreatment devices 200 to re-treat the pretreated exhaust gas.

[0054] exist Figure 1 In the waste gas treatment system 100 shown, the waste gas generated by all semiconductor production equipment 110 is directly introduced into the waste gas central treatment system 120. When the amount of waste gas generated by the semiconductor production equipment 110 is large and contains more toxic, harmful, flammable, explosive, and corrosive process waste gas, it will cause tremendous pressure on the processing capacity of the waste gas central treatment system 120, and it will also make the modification of the waste gas central treatment system 120 very difficult, and put higher requirements on the waste gas treatment system 100.

[0055] And in Figure 3 In the waste gas treatment system 300 provided by the present application, the waste gas generated by each semiconductor production equipment 310 is first pre-treated by a corresponding waste gas pre-treatment device 200 before entering the waste gas central treatment system 320, which can reduce the pressure of the waste gas central treatment system 320.

[0056] In some embodiments of the present application, since there are many types of semiconductor production equipment 310 and many types of waste gas are generated, it is not necessary to connect all semiconductor production equipment 310 to the waste gas pretreatment device 200. Instead, the semiconductor production equipment 310 can be classified. For semiconductor production equipment 310 that generates a large amount of waste gas, and the waste gas is mostly toxic, harmful, flammable, explosive, and corrosive, it is necessary to connect the waste gas pretreatment device 200; for semiconductor production equipment 310 that generates a small amount of waste gas and the waste gas is not harmful, it can still be directly connected to the waste gas treatment system 300.

[0057] The present application provides an exhaust gas pretreatment device and an exhaust gas treatment system, which can not only reduce the processing pressure of the central treatment system, but also effectively reduce the damage of the exhaust gas to the central treatment system, increase the overall service life of the central treatment system, and improve the processing efficiency of the central treatment system.

[0058] In summary, after reading the contents of this application, those skilled in the art will appreciate that the aforementioned application contents may be presented only in an exemplary manner and may not be restrictive. Although not explicitly stated herein, those skilled in the art will appreciate that this application is intended to encompass various reasonable changes, improvements and modifications to the embodiments. These changes, improvements and modifications are within the spirit and scope of the exemplary embodiments of this application.

[0059] It should be understood that the term "and / or" used in this embodiment includes any or all combinations of one or more of the associated listed items. It should also be understood that the terms "comprise", "comprising", "including" or "comprising", when used in this application document, indicate the existence of the recorded features, wholes, steps, operations, elements and / or components, but do not exclude the existence or addition of one or more other features, wholes, steps, operations, elements, components and / or their groups.

[0060] It should also be understood that although the terms first, second, third, etc. can be used to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, without departing from the teachings of the present application, the first element in some embodiments can be referred to as the second element in other embodiments. The same reference numerals or the same reference signs represent the same elements throughout the specification.

[0061] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

Claims

1. A waste gas pretreatment device, characterized in that: include: A reaction tower, the reaction tower comprising an exhaust gas inlet and an exhaust port located at the bottom and the top of the reaction tower respectively; a particle sedimentation tank, located at the bottom of the reaction tower and connected to the plurality of exhaust gas inlets; A particle filter cotton layer is located above the particle sedimentation tank and filters solid particles in the exhaust gas; A bubble generator, located above the particle filter cotton layer, separates the exhaust gas flow into bubbles; An alkali liquid reactor, located above the bubble generator, removes acidic gases from the exhaust gas; An activated carbon adsorption layer is located above the alkali solution reactor and adsorbs water vapor in the exhaust gas; The combustion chamber is located above the activated carbon adsorption layer, burns the exhaust gas and discharges the combustion products through the exhaust port.

2. The exhaust gas pretreatment device according to claim 1, characterized in that: There are multiple exhaust gas inlets, which are evenly distributed along the circumference of the particle sedimentation trough. The multiple exhaust gas inlets and the side wall of the particle sedimentation trough form an elevation angle of 45 degrees from the bottom of the particle sedimentation trough to the top of the particle sedimentation trough.

3. The exhaust gas pretreatment device according to claim 1, characterized in that: A filter screen is arranged on the top of the particle sedimentation tank.

4. The exhaust gas pretreatment device according to claim 1, characterized in that: The top and bottom of the side wall of the alkali liquid reactor are respectively provided with a reaction liquid outlet and an alkali liquid inlet, and the reaction liquid outlet and the alkali liquid inlet are located on two opposite sides of the alkali liquid reactor.

5. The exhaust gas pretreatment device according to claim 1, characterized in that: The alkali solution reactor is provided with a stirrer.

6. The exhaust gas pretreatment device according to claim 1, characterized in that: The alkali liquid reactor is provided with an acidity and alkalinity tester.

7. The exhaust gas pretreatment device according to claim 1, characterized in that: A plurality of evenly distributed filtered air outlets are arranged on the top of the activated carbon adsorption layer.

8. The exhaust gas pretreatment device according to claim 1, characterized in that: A plurality of oxygen inlets are evenly distributed on the side wall of the combustion chamber.

9. The exhaust gas pretreatment device according to claim 1, characterized in that: An ignition device is arranged on the top of the combustion chamber.

10. The exhaust gas pretreatment device according to claim 1, characterized in that: The inner wall of the exhaust port is coated with an anti-corrosion layer, and the outer wall of the exhaust port is wrapped with a constant temperature heating belt.

11. An exhaust gas treatment system, characterized in that: include: certain semiconductor production equipment; A plurality of waste gas pretreatment devices according to any one of claims 1 to 10, respectively connected to the waste gas discharge ports of the plurality of semiconductor production equipment, to pretreat the waste gas discharged by the plurality of semiconductor production equipment; The exhaust gas central treatment system is connected to the exhaust ports of the plurality of exhaust gas pre-treatment devices to re-treat the pre-treated exhaust gas.

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