Integrated MEMS chip and manufacturing method thereof
By manufacturing an auxiliary hole structure on the second substrate of the MEMS chip and connecting the vent holes, the problem that different sensor structures cannot independently set the air pressure, the air pressure adjustment of different sensor structures is achieved, and the performance of the MEMS chip is improved. reliability.
Patent Information
- Application Number
- CN202411666083.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-20
- Publication Date
- 2025-02-14
- Estimated Expiration
- 2044-11-20
AI Technical Summary
The prior art cannot set air pressure for different sensor structures integrated on the same MEMS chip, resulting in the inability to meet the air pressure requirements of different sensors.
By manufacturing an auxiliary opening structure on the second substrate and opening a first vent hole thereon, connecting the first vent hole and the second vent hole on the second substrate, the deformation space in which the sensor structure is located is located Connect with the outside world to adjust the air pressure.
It realizes setting air pressure for different sensor structures on the same MEMS chip to meet the air pressure requirements of different sensors, and improves the reliability and performance of MEMS chip.
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Figure CN119430073A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of manufacturing methods of integrated MEMS chips, and in particular to an integrated MEMS chip and a manufacturing method thereof. Background Art
[0002] Integrated MEMS chip means integrating multiple sensors with different functions on the same MEMS chip. This integration trend can not only reduce the physical size of the system and reduce power consumption, but also improve the reliability and performance of the overall system.
[0003] Some sensor structures integrated on MEMS chips need to work in a closed cavity structure, and wafer bonding is usually used to package the sensor in a closed cavity. However, sensors with different functions require different cavity pressures, and wafer bonding can only achieve a given cavity pressure, and it is impossible to set the pressure for different sensor structures integrated on the same wafer. Summary of the invention
[0004] Embodiments of the present invention provide an integrated MEMS chip and a method for manufacturing the same, so as to set corresponding air pressures for different sensor structures on the same MEMS chip.
[0005] In order to solve the above technical problems, the embodiments of the present invention disclose the following technical solutions: In one aspect, a method for manufacturing an integrated MEMS chip is provided, comprising: Providing a first substrate and a second substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; Manufacturing at least one auxiliary opening structure, wherein the at least one auxiliary opening structure is located on one side surface of the second substrate, and the thickness of each of the auxiliary opening structures is smaller than the thickness of the second substrate; A first vent hole is formed on each of the auxiliary opening structures and passes through the auxiliary opening structure; Manufacturing a plurality of sensor structures, wherein the plurality of sensor structures are located on a surface of the first substrate where the plurality of active grooves are formed, and the plurality of sensor structures correspond to the plurality of active grooves one by one; The first substrate and the second substrate are connected, a surface of each sensor structure facing away from the first substrate has an active gap between it and a surface of the second substrate provided with the auxiliary opening structure, adjacent active gaps are physically isolated, and the active gaps and the active grooves together constitute a deformation space of the corresponding sensor structure; At least one second vent hole is formed on the second substrate and passes through the second substrate, wherein the at least one second vent hole corresponds to the at least one auxiliary opening structure one by one, and the second vent hole is connected to the first vent hole of the corresponding auxiliary opening structure, so that the corresponding deformation space is connected to the outside of the MEMS chip, and the air pressure of the corresponding deformation space is adjusted through the connected second vent hole and the first vent hole; The first vent hole and the second vent hole are blocked.
[0006] In addition to or as an alternative to one or more of the features disclosed above, blocking the first vent and the second vent includes: Making a first blocking structure, wherein the first blocking structure covers the inner wall of the second vent hole and blocks the first vent hole; A second blocking structure is manufactured, wherein the second blocking structure fills the second vent hole.
[0007] In addition to one or more of the features disclosed above, or as an alternative, each of the sensor structures includes a working area and a non-working area, and in the thickness direction of the first substrate, the projection of each of the auxiliary opening structures on the corresponding sensor structure is located in the non-working area of the sensor structure.
[0008] In addition to or as an alternative to one or more of the features disclosed above, the manufacturing of at least one auxiliary opening structure includes: At least one groove structure is formed on one side surface of the second substrate, and the depth of each groove structure is less than the thickness of the second substrate, wherein when there are at least two groove structures, the at least two groove structures are spaced apart; An insulating material is deposited in each of the groove structures to form the at least one auxiliary opening structure, and a surface of each of the auxiliary opening structures facing away from the groove bottom of the groove structure is flush with the surface of the second substrate.
[0009] In addition to or as an alternative to one or more of the features disclosed above, the manufacturing of at least one auxiliary opening structure includes: Depositing an insulating material on one side surface of the second substrate, wherein the deposition thickness of the insulating material is less than the thickness of the second substrate; Parts of the insulating material are removed at intervals to form at least one bump structure, and each of the bump structures constitutes one of the auxiliary opening structures.
[0010] In addition to or as an alternative to one or more of the features disclosed above, before the first substrate and the second substrate are bonded, the manufacturing method further includes: Making at least one protection structure, wherein the protection structure is located on a surface of the sensor structure facing away from the first substrate; Among them, the at least one protection mechanism corresponds one-to-one to the at least one auxiliary opening structure, and after the first substrate and the second substrate are bonded, in the thickness direction of the first substrate, the projections of the corresponding auxiliary opening structure and the protection structure overlap on the corresponding sensor structure.
[0011] In addition to or as an alternative to one or more of the features disclosed above, the first ventilation holes have a pore size of 0.2 μm-1 μm.
[0012] In addition to or instead of one or more features disclosed above, the aperture of the first ventilation hole is smaller than the aperture of the second ventilation hole at one end close to the first ventilation hole, and a side surface of the auxiliary opening structure facing away from the sensor structure is exposed in the second ventilation hole.
[0013] In another aspect, an integrated MEMS chip is provided, comprising: A first substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; A plurality of sensor structures, the plurality of sensor structures corresponding to the plurality of active grooves one by one, and connected to a surface of a side of the first substrate having the active grooves, wherein in a thickness direction of the first substrate, projections of the corresponding active grooves and the sensor structures overlap; a second substrate, the second substrate being connected to a side of the sensor structure facing away from the first substrate, an active gap being provided between the side of each sensor structure facing away from the first substrate and the second substrate, adjacent active gaps being physically isolated, and the active gaps and the active grooves together forming a deformation space of the corresponding sensor structure; At least one auxiliary opening structure, the at least one auxiliary opening structure is connected to a surface of one side of the second substrate opposite to the sensor structure, each of the auxiliary opening structures is provided with a first ventilation hole penetrating the auxiliary opening structure, the thickness of each of the auxiliary opening structures is less than the thickness of the second substrate, and in the thickness direction of the first substrate, the projections of the auxiliary opening structure and the first ventilation hole are located within the projection of the active interval; Among them, the second substrate also has second ventilation holes corresponding to the at least one auxiliary opening structure, each of the second ventilation holes is connected to the corresponding first ventilation hole on the auxiliary opening structure, and the air pressure in the deformation space where the auxiliary opening structure is located is adjusted through the first ventilation hole and the second ventilation hole. After the pressure is adjusted, the first ventilation hole and the second ventilation hole are blocked.
[0014] In addition to or as an alternative to one or more of the features disclosed above, a blocking structure is further included, the blocking structure includes a first blocking structure and a second blocking structure, the first blocking structure covers the inner wall of the second vent and fills the first vent, and the second blocking structure fills the second vent. In addition to or as an alternative to one or more of the features disclosed above, the aperture of the first vent is smaller than the aperture of the second vent near one end of the first vent, and the surface of the auxiliary opening structure facing away from the sensor structure is exposed in the second vent.
[0015] In addition to one or more of the features disclosed above, or as an alternative, each of the sensor structures includes a working area and a non-working area, and in the thickness direction of the first substrate, the projection of each of the auxiliary opening structures on the corresponding sensor structure is located in the non-working area of the sensor structure.
[0016] In addition to one or more of the features disclosed above, or as an alternative, a protective structure is also connected to the surface of the sensor structure corresponding to the auxiliary opening structure on the side facing away from the first substrate, and in the thickness direction of the first substrate, the projection of the auxiliary opening structure on the corresponding sensor structure overlaps with the projection of the protective structure on the corresponding sensor structure.
[0017] One of the above technical solutions has the following advantages or beneficial effects: a plurality of sensor structures are manufactured on one side surface of the first substrate disclosed in the present application, and when one or more of the plurality of sensor structures need to adjust the air pressure in the deformation space in which they are located, an auxiliary opening structure is provided on one side surface of the second substrate corresponding to each sensor structure that needs to adjust the air pressure. Before bonding the first substrate and the second substrate, the present application first opens a first vent through the auxiliary opening structure on the auxiliary opening structure, and after bonding the first substrate and the second substrate, opens a second vent connected to the first vent on the second substrate, so that the deformation space where the sensor structure that needs to adjust the air pressure is located can be connected to the outside world through the first vent and the second vent, thereby adjusting the air pressure in the deformation space, and the first vent and the second vent are blocked after the air pressure adjustment is completed.
[0018] Moreover, the present application pre-manufactures an auxiliary opening structure having a thickness less than that of the second substrate. Compared with directly opening a hole on the second substrate, the present application first opens a first ventilation hole on the auxiliary opening structure before bonding, thereby being able to open a first ventilation hole with a smaller aperture. The first ventilation hole is directly connected to the deformation space, and the smaller aperture makes it easier to seal the first ventilation hole after the subsequent pressure adjustment is completed, thereby improving the airtightness in the deformation space. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The technical solutions and other beneficial effects of the present invention will be made apparent by describing in detail the specific embodiments of the present invention in conjunction with the accompanying drawings.
[0020] Figure 1 is a step diagram of a method for manufacturing an integrated MEMS chip provided in an embodiment of the present application; Figure 2-11 is a process diagram of a method for manufacturing an integrated MEMS chip provided according to an embodiment of the present application; Figure 12-14 is a process diagram of an auxiliary hole opening structure provided according to an embodiment of the present application; Figure 15-16 It is a structural schematic diagram of a protection structure provided according to an embodiment of the present application.
[0021] Description of reference numerals: 100, first substrate; 101, active groove; 110. Sensor structure; 111. Working area; 112. Non-working area; 113. Protection structure; 120. A first connecting ring structure; 200, second substrate; 201, groove structure; 202, bump structure; 203, auxiliary opening structure; 204, first vent hole; 205, second vent hole; 210, first blocking structure; 220, second blocking structure; 230, second connecting ring structure; 300. Activity interval. DETAILED DESCRIPTION
[0022] In order to make the purpose, technical solution and beneficial effects of the present invention more clear, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described in this specification are only for explaining the present invention, not for limiting the present invention.
[0023] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" refers to two or more, unless otherwise clearly and specifically defined.
[0024] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0025] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0026] The embodiment of the present invention discloses a method for manufacturing an integrated MEMS chip, referring to Figure 1 , the manufacturing method of the integrated MEMS chip comprises: S100. Provide a first substrate and a second substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; S200. Manufacturing at least one auxiliary opening structure, wherein at least one auxiliary opening structure is located on one side surface of the second substrate, and the thickness of each auxiliary opening structure is less than the thickness of the second substrate; S300. A first vent hole is formed on each auxiliary opening structure, which passes through the auxiliary opening structure; S400. Manufacturing a plurality of sensor structures, the plurality of sensor structures are located on a surface of the first substrate having a plurality of active grooves, and the plurality of sensor structures correspond one to one to the plurality of active grooves; S500. Connect the first substrate and the second substrate, each sensor structure has an active gap between a surface on one side facing away from the first substrate and a surface of the second substrate provided with the auxiliary opening structure, in the thickness direction of the first substrate, the projection of the auxiliary opening structure and the first vent hole is located within the projection of the active gap, adjacent active gaps are physically isolated, and the active gap and the active groove together constitute a deformation space of the corresponding sensor structure; S600. At least one second vent hole is formed on the second substrate, the at least one second vent hole corresponds to the at least one auxiliary opening structure, and the second vent hole is connected to the first vent hole of the corresponding auxiliary opening structure, so that the corresponding deformation space is connected to the outside of the MEMS chip, and the air pressure of the corresponding deformation space is adjusted through the connected second vent hole and the first vent hole; S700. Seal the first vent hole and the second vent hole.
[0027] In step S100, the first substrate 100 is provided as Figure 2 Specifically, the number of multiple mutually physically isolated active grooves 101 is set based on the number of sensor structures 110 integrated in the MEMS chip, and each sensor structure 110 is correspondingly provided with an active groove 101. The drawings disclosed in this application take the MEMS chip integrating two sensor structures 110 as an example.
[0028] In step S200, at least one auxiliary opening structure 203 is manufactured on one side surface of the second substrate 200. In different embodiments, the manufacturing steps of the auxiliary opening structure 203 are different. The manufacturing steps of the auxiliary opening structure 203 are described in detail below in combination with different embodiments: Reference Figure 3-Figure 4, the first embodiment of manufacturing the auxiliary opening structure 203 is: first, at least one groove structure 201 is opened on the side surface of the second substrate 200, and the opening depth of each groove structure 201 is less than the thickness of the second substrate 200. When there are at least two groove structures 201, at least two groove structures 201 are arranged at intervals. Then, an insulating material is deposited in each groove structure 201 to form at least one auxiliary opening structure 203, and the side surface of each auxiliary opening structure 203 away from the bottom of the groove structure 201 is flush with the surface of the second substrate 200. It should be noted that after the first substrate 100 and the second substrate 200 are bonded, in the thickness direction of the first substrate 100, the projection of the groove structure 201 is located within the projection range of the sensor structure 110 that needs to adjust the air pressure of the deformation space. When there are at least two groove structures 201, the projection of each groove structure 201 is located within the projection range of different sensor structures 110 that need to adjust the air pressure of the deformation space. Refer to Figure 5 After the auxiliary opening structure 203 is manufactured, a first vent hole 204 penetrating the auxiliary opening structure 203 is opened on the auxiliary opening structure 203, and the bottom of the groove structure 201 is exposed from the first vent hole 204. The aperture of the opened first vent hole 204 is between 0.2um and 1um, and the first vent hole 204 can be used as a part of the air pressure regulating channel in the deformation space where the sensor structure 110 corresponding to the auxiliary opening structure 203 is located.
[0029] Reference Figure 12-13 , the second embodiment of manufacturing the auxiliary opening structure 203 is: first, an insulating material is deposited on the surface of one side of the second substrate 200, wherein the deposition thickness of the insulating material is less than the thickness of the second substrate 200. Then, part of the insulating material is removed at intervals to form at least one bump structure 202, and each bump structure 202 constitutes an auxiliary opening structure 203. Similarly, if the air pressure of the deformation space of multiple sensor structures 110 among the multiple sensor structures 110 integrated in the MEMS chip needs to be adjusted, after the first substrate 100 and the second substrate 200 are bonded, the projections of the multiple bump structures 202 formed by removing part of the insulating material at intervals are respectively located within the projection ranges of different sensor structures 110 whose air pressure of the deformation space needs to be adjusted. It should be noted that the material of the above-mentioned auxiliary opening structure 203 can preferably be SiO2, SiN or a combination thereof. Similarly, referring to Fig.14 After the auxiliary opening structure 203 is manufactured, a first ventilation hole 204 penetrating the auxiliary opening structure 203 is opened on the auxiliary opening structure 203, and the surface of the second substrate 200 is exposed from the first ventilation hole 204. The aperture of the opened first ventilation hole 204 is between 0.2um and 1um.
[0030] It should be noted that, whether in the first embodiment of manufacturing the auxiliary opening structure 203 or in the second embodiment of manufacturing the auxiliary opening structure 203, the thickness of the auxiliary opening structure 203 is less than the thickness of the second substrate 200. Compared with directly opening the first vent 204 connected to the outside on the second substrate 200, the present application first opens the first vent 204 on the auxiliary opening structure 203 before bonding, and can open a first vent 204 with a smaller aperture. In the thickness direction of the first substrate 100, the projections of the auxiliary opening structure 203 and the first vent 204 are both located within the projection of the active interval 300, so that the first vent 204 is directly connected to the corresponding deformation space. Because the aperture of the first vent 204 is small, it can be quickly blocked by evaporation or PVD in the future, which can improve the airtightness in the deformation space and avoid the deposition of the blocking material in the working area 111 of the sensor structure 110.
[0031] In step 400, a plurality of sensor structures 110 are fabricated on a surface of the first substrate 100 having a plurality of active grooves 101. Figure 6 , multiple sensor structures 110 correspond to multiple active grooves 101 one by one, and cover the openings of the active grooves 101. Specifically, the sensor structure 110 is usually made by bonding a silicon wafer to the surface of the first substrate 100 where multiple active grooves 101 are opened, then thinning and flattening the silicon wafer, and finally patterning and etching the silicon wafer to form a sensor structure 110 above each active groove 101. Further, each sensor structure 110 includes a working area 111 and a non-working area 112, the non-working area 112 is connected to the surface of the first substrate 100, and the projection of the working area 111 in the thickness direction of the first substrate 100 overlaps with the projection of the corresponding active groove 101. When the first substrate 100 and the second substrate 200 are bonded, the projection of each auxiliary opening structure 203 on the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110.
[0032] In step S500, the first substrate 100 and the second substrate 200 are connected. Figure 7After the first substrate 100 and the second substrate 200 are bonded, there is an active gap 300 between the surface of each sensor structure 110 facing away from the first substrate 100 and the surface of the second substrate 200 provided with the auxiliary opening structure 203, and adjacent active gaps 300 are physically isolated. The active gap 300 and the active groove 101 together constitute the deformation space of the corresponding sensor structure 110, and the active gap 300 and the active groove 101 are connected through the corresponding sensor structure 110. Specifically, the active interval 300 can be formed by the following method: before connecting the first substrate 100 and the second substrate 200, a first connecting ring structure 120 is manufactured on the side surface of each sensor structure 110 away from the first substrate 100, the working area 111 of the sensor structure 110 is located in the first connecting ring structure 120, and a second connecting ring structure 230 corresponding to the first connecting ring structure 120 is manufactured on the side surface of the second substrate 200 where the auxiliary opening structure 203 is manufactured; when connecting the first substrate 100 and the second substrate 200, the corresponding first connecting ring structures 120 and the second connecting ring structures 230 are abutted, so that the active interval 300 is formed between the side surface of each sensor structure 110 away from the first substrate 100 and the surface of the second substrate 200 where the auxiliary opening structure 203 is provided. Multiple pairs of abutting first connecting ring structures 120 and second connecting ring structures 230 separate the second substrate 200 and the sensor structure 110 into multiple physically isolated active intervals 300. It should be noted that when the first connecting ring structure 120 and the second connecting ring structure 230 are made of conductive materials, there is a gap between adjacent first connecting ring structures 120, and there is also a gap between adjacent second connecting ring structures 230. When the first connecting ring structure 120 and the second connecting ring structure 230 are made of insulating materials, adjacent first connecting ring structures 120 can be connected. In this way, the embodiment disclosed in the present application not only completes the bonding between the first substrate 100 and the second substrate 200 through the first connecting ring structure 120 and the second connecting ring structure 230 to ensure the airtightness of the deformation space, but also enables the side of the sensor structure 110 away from the first substrate 100 to provide an active gap 300 for the deformation of the sensor structure 110 without grooving the second substrate 200. At the same time, the first connecting ring structure 120 and the second connecting ring structure 230 can also act as an electrical signal transmission end to output the electrical signal detected by the sensor structure 110.
[0033] It should also be noted that in the second embodiment of manufacturing the auxiliary opening structure 203, the thickness of the auxiliary opening structure 203 is less than the sum of the thicknesses of the first connecting ring structure 120 and the second connecting ring structure 230, and a narrow ventilation channel is formed between the side surface of the auxiliary opening structure 203 facing away from the second substrate 200 and the side surface of the sensor structure 110 facing the auxiliary opening structure 203, which can further prevent the metal material from being deposited in the working area 111 of the sensor structure 110 when the first ventilation hole 204 is blocked. Figure 8 In step S600, at least one second vent hole 205 is formed on the second substrate 200. The number of the second vent holes 205 is the same as the number of the first vent holes 204, and they correspond one to one.
[0034] Reference Fig.11 Step S700, after adjusting the air pressure in the corresponding deformation space through the connected second vent hole 205 and the first vent hole 204, the first vent hole 204 and the second vent hole 205 are blocked. In some embodiments, the first vent hole 204 and the second vent hole 205 are blocked by the following steps: Fig. 9 , first make a first blocking structure 210, the first blocking structure 210 covers the inner wall of the second vent 205, and blocks the first vent 204. Specifically, the first blocking structure 210 can be made by evaporation and PVD process, evaporation and PVD are thin film deposition technologies, in the embodiment disclosed in the present application, the aperture of the first vent 204 is between 0.2um-1um, and the above-mentioned thin film deposition technology can form a dense and uniform first blocking structure 210 inside and outside the first vent 204, ensuring that the first vent 204 has good air tightness after blocking. Compared with the laser blocking method to block the first vent 204, the thin film deposition technology used in the present application to block the first vent 204 has less thermal impact, thereby avoiding thermal damage to the MEMS chip during the blocking process. Refer to Fig.10, and then make a second blocking structure 220, and the second blocking structure 220 fills the second vent 205. The second blocking structure 220 can be formed by electroplating. Making the second blocking structure 220 by electroplating can improve the adhesion of the second blocking structure 220 and ensure that the metal is evenly filled in the second vent 205. Blocking the second vent 205 can further improve the airtightness of the deformation space. It should be noted that the above-mentioned first blocking structure 210 can partially block the first vent 204, or completely block the first vent 204, and the second blocking structure 220 can partially block the second vent 205, or completely block the second vent 205. The material of the first blocking structure 210 can be Ti, Cu, Cr, TiW or related alloy materials. The material of the second blocking structure 220 can be Cu, Ni, Ag, Al or a combination thereof. Ti, Cu, Cr, TiW or related alloy materials can be evaporated or PVD under low pressure or even high vacuum conditions, so that the deformation space after pressure adjustment can maintain a high vacuum degree. Maintaining a high vacuum degree in the deformation space helps to reduce the gas content in the deformation space after packaging, and prevents gas molecules from corroding or chemically reacting with the sensor structure 110.
[0035] When manufacturing the first blocking structure 210 and the second blocking structure 220, the first blocking structure 210 will cover the surface of the second substrate 200 facing away from the auxiliary opening structure 203. Therefore, after manufacturing the first blocking structure 210 and the second blocking structure 220, the first blocking structure 210 and the second blocking structure 220 covering the surface of the second substrate 200 can be removed by chemical etching or CMP process.
[0036] In order to further improve the airtightness of the deformation space, in some embodiments, the aperture of the first vent 204 is smaller than the aperture of the second vent 205 at one end close to the first vent 204, and the side surface of the auxiliary opening structure 203 away from the sensor structure 110 is exposed in the second vent 205. In this way, the first blocking structure 210 can cover the inner wall of the second vent 205, the side surface of the auxiliary opening structure 203 away from the sensor structure 110 and block the first vent 204. Compared with the case where the aperture of the first vent 204 is equal to the aperture of the second vent 205 at one end close to the first vent 204, such a setting provides a larger contact area and structural support, which can enhance the mechanical strength of the first blocking structure 210 and reduce the risk of the blocking material falling off or cracking due to external force or temperature change during use. Especially for the blocking of thin film materials, a larger contact area can reduce stress concentration and extend the service life of the blocking structure.
[0037] In order to prevent the etching solution from dropping onto the sensor structure 110 through the first vent hole 204 and causing damage to the sensor structure 110 when etching the second vent hole 205, refer to Fig.15 and Fig.16 In some embodiments, before the first substrate 100 and the second substrate 200 are bonded, the method for manufacturing the integrated MEMS chip further includes manufacturing at least one protection structure 113 on a surface of the sensor structure 110 facing away from the first substrate 100. Specifically, referring to Fig.16 , the protective structure 113 corresponds to the auxiliary opening structure 203 one by one. The manufacturing steps of the protective structure 113 are specifically as follows: depositing a protective material on the surface of the side of the sensor structure 110 away from the first substrate 100, the protective material can generally be an insulating material such as SiO2, SiN, etc., and then etching the deposited protective material so that the formed protective structure 113 is a bump protruding from the surface of one side of the first substrate 100. After the first substrate 100 and the second substrate 200 are bonded, in the thickness direction of the first substrate 100, the projections of the corresponding auxiliary opening structures 203 and the protective structure 113 overlap on the corresponding sensor structure 110. It should be noted that the projection of each auxiliary opening structure 203 on the corresponding sensor structure 110 is located in the non-working area 112 of the sensor structure 110, so the protective structure 113 corresponding to each auxiliary opening structure 203 is also located in the non-working area 112 of the sensor structure 110. Meanwhile, it should be noted that the thickness of the protection structure 113 is smaller than the thickness of the first connection ring structure 120 , and there is a gap between the protection structure 113 and the corresponding auxiliary opening structure 203 .
[0038] The embodiment of the present invention also discloses an integrated MEMS chip, referring to Fig.11The integrated MEMS chip includes: a first substrate 100, a plurality of sensor structures 110, a second substrate 200, and at least one auxiliary opening structure 203. A plurality of mutually physically isolated active grooves 101 are provided on one side surface of the first substrate 100, and a plurality of sensor structures 110 correspond to the plurality of active grooves 101 one by one, and are connected to a side surface of the first substrate 100 on which the active grooves 101 are provided. In the thickness direction of the first substrate 100, the projections of the corresponding active grooves 101 and the sensor structures 110 overlap. The second substrate 200 is connected to a side of the sensor structure 110 that is away from the first substrate 100, and each side of the sensor structure 110 that is away from the first substrate 100 has an active gap 300 with the second substrate 200, and adjacent active gaps 300 are physically isolated, and the active gaps 300 and the active gaps 101 together constitute the deformation space of the corresponding sensor structure 110. At least one auxiliary opening structure 203 is connected to a surface of one side of the second substrate 200 relative to the sensor structure 110. Each auxiliary opening structure 203 is provided with a first vent hole 204 that penetrates the auxiliary opening structure 203. The thickness of each auxiliary opening structure 203 is less than the thickness of the second substrate 200. In the thickness direction of the first substrate 100, the projections of the auxiliary opening structure 203 and the first vent hole 204 are located within the projection of the active interval 300. The second substrate 200 also has second vent holes 205 that correspond to at least one auxiliary opening structure 203 one by one. Each second vent hole 205 is connected to the first vent hole 204 on the corresponding auxiliary opening structure 203. The air pressure in the deformation space where the auxiliary opening structure 203 is located is adjusted through the first vent hole 204 and the second vent hole 205. After the pressure adjustment, the first vent hole 204 and the second vent hole 205 are blocked.
[0039] In some embodiments, the aperture of the first vent 204 is 0.2 μm-1 μm. In some embodiments, the aperture of the first vent 204 is smaller than the aperture of the second vent 205 near the first vent 204 , and the side surface of the auxiliary opening structure 203 facing away from the sensor structure 110 is exposed in the second vent 205 .
[0040] In some embodiments, the first vent 204 and the second vent 205 are blocked by a blocking structure, and the blocking structure includes a first blocking structure 210 and a second blocking structure 220. The first blocking structure 210 covers the inner wall of the second vent 205 and fills the first vent 204, and the second blocking structure 220 fills the second vent (205).
[0041] In some embodiments, each sensor structure 110 includes an operating area 111 and a non-operating area 112, and in the thickness direction of the first substrate 100, the projection of each auxiliary opening structure 203 on the corresponding sensor structure 110 is located in the non-operating area 112 of the sensor structure 110. In some embodiments, a protective structure 113 is further connected to a surface of the sensor structure 110 corresponding to the auxiliary opening structure 203 on a side away from the first substrate 100, and in the thickness direction of the first substrate 100, the projection of the auxiliary opening structure 203 on the corresponding sensor structure 110 overlaps with the projection of the protective structure 113 on the corresponding sensor structure 110.
[0042] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0043] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.
Claims
1. A method for manufacturing an integrated MEMS chip, characterized in that: include: Providing a first substrate and a second substrate, wherein a plurality of movable grooves physically isolated from each other are formed on a surface of one side of the first substrate; Manufacturing at least one auxiliary opening structure, wherein the at least one auxiliary opening structure is located on one side surface of the second substrate, and the thickness of each of the auxiliary opening structures is smaller than the thickness of the second substrate; A first vent hole is formed on each of the auxiliary opening structures and passes through the auxiliary opening structure; Manufacturing a plurality of sensor structures, wherein the plurality of sensor structures are located on a surface of the first substrate where the plurality of active grooves are formed, and the plurality of sensor structures correspond to the plurality of active grooves one by one; The first substrate and the second substrate are connected, a movable gap is formed between a surface of each sensor structure facing away from the first substrate and a surface of the second substrate provided with an auxiliary opening structure, in the thickness direction of the first substrate, the projections of the auxiliary opening structure and the first vent hole are located within the projection of the movable gap, adjacent movable gaps are physically isolated, and the movable gaps and the movable grooves together constitute a deformation space of the corresponding sensor structure; At least one second vent hole is formed on the second substrate and passes through the second substrate, wherein the at least one second vent hole corresponds to the at least one auxiliary opening structure one by one, and the second vent hole is connected to the first vent hole of the corresponding auxiliary opening structure, so that the corresponding deformation space is connected to the outside of the MEMS chip, and the air pressure of the corresponding deformation space is adjusted through the connected second vent hole and the first vent hole; The first vent hole and the second vent hole are blocked.
2. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The blocking of the first vent hole and the second vent hole comprises: Making a first blocking structure, wherein the first blocking structure covers the inner wall of the second vent hole and blocks the first vent hole; A second blocking structure is manufactured, wherein the second blocking structure fills the second vent hole.
3. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: Each of the sensor structures includes a working area and a non-working area. In the thickness direction of the first substrate, a projection of each of the auxiliary opening structures on the corresponding sensor structure is located in the non-working area of the sensor structure.
4. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The manufacturing of at least one auxiliary opening structure comprises: At least one groove structure is formed on one side surface of the second substrate, and the depth of each groove structure is less than the thickness of the second substrate, wherein when there are at least two groove structures, the at least two groove structures are spaced apart; An insulating material is deposited in each of the groove structures to form the at least one auxiliary opening structure, and a surface of each of the auxiliary opening structures facing away from the groove bottom of the groove structure is flush with the surface of the second substrate.
5. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The manufacturing of at least one auxiliary opening structure comprises: Depositing an insulating material on one side surface of the second substrate, wherein the deposition thickness of the insulating material is less than the thickness of the second substrate; Parts of the insulating material are removed at intervals to form at least one bump structure, and each of the bump structures constitutes one of the auxiliary opening structures.
6. The method for manufacturing an integrated MEMS chip according to claim 3, characterized in that: Before bonding the first substrate and the second substrate, the manufacturing method further includes: Making at least one protection structure, wherein the protection structure is located on a surface of the sensor structure facing away from the first substrate; Among them, the at least one protective structure corresponds one-to-one to the at least one auxiliary opening structure, and after the first substrate and the second substrate are bonded, in the thickness direction of the first substrate, the projections of the corresponding auxiliary opening structure and the protective structure overlap on the corresponding sensor structure.
7. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The first vent hole has a pore size of 0.2 μm-1 μm.
8. The method for manufacturing an integrated MEMS chip according to claim 1, characterized in that: The aperture of the first ventilation hole is smaller than the aperture of the second ventilation hole at one end close to the first ventilation hole, and a surface of one side of the auxiliary opening structure away from the sensor structure is exposed in the second ventilation hole.
9. An integrated MEMS chip, characterized in that: include: A first substrate (100), wherein a plurality of movable grooves (101) physically isolated from each other are formed on a surface of one side of the first substrate (100); a plurality of sensor structures (110), the plurality of sensor structures (110) corresponding one to one with the plurality of active grooves (101), and connected to a surface of a side of the first substrate (100) on which the active grooves (101) are provided, and in a thickness direction of the first substrate (100), projections of the corresponding active grooves (101) and the sensor structures (110) overlap; a second substrate (200), the second substrate (200) being connected to a side of the sensor structure (110) facing away from the first substrate (100), an active gap (300) being provided between the side of each sensor structure (110) facing away from the first substrate (100) and the second substrate (200), adjacent active gaps (300) being physically isolated, and the active gaps (300) and the active grooves (101) together forming a deformation space of the corresponding sensor structure (110); at least one auxiliary opening structure (203), the at least one auxiliary opening structure (203) being connected to a surface of one side of the second substrate (200) opposite to the sensor structure (110), each of the auxiliary opening structures (203) being provided with a first ventilation hole (204) penetrating the auxiliary opening structure (203), the thickness of each of the auxiliary opening structures (203) being smaller than the thickness of the second substrate (200), and in the thickness direction of the first substrate (100), the projections of the auxiliary opening structures (203) and the first ventilation holes (204) being located within the projection of the active interval (300); The second substrate (200) further comprises second ventilation holes (205) corresponding one-to-one to the at least one auxiliary opening structure (203), each of the second ventilation holes (205) is connected to the first ventilation hole (204) on the corresponding auxiliary opening structure (203), the air pressure in the deformation space where the auxiliary opening structure (203) is located is adjusted by the first ventilation hole (204) and the second ventilation hole (205), and after the pressure adjustment, the first ventilation hole (204) and the second ventilation hole (205) are blocked.
10. The integrated MEMS chip according to claim 9, characterized in that: It also includes a blocking structure, which includes a first blocking structure (210) and a second blocking structure (220), wherein the first blocking structure (210) covers the inner wall of the second ventilation hole (205) and fills the first ventilation hole (204), and the second blocking structure (220) fills the second ventilation hole (205).
11. The integrated MEMS chip according to claim 9, characterized in that: include: The aperture of the first ventilation hole (204) is smaller than the aperture of the second ventilation hole (205) at one end close to the first ventilation hole (204), and a side surface of the auxiliary opening structure (203) facing away from the sensor structure (110) is exposed in the second ventilation hole (205).
12. The integrated MEMS chip according to claim 9, characterized in that: Each of the sensor structures (110) comprises a working area (111) and a non-working area (112); in the thickness direction of the first substrate (100), a projection of each of the auxiliary opening structures (203) on the corresponding sensor structure (110) is located in the non-working area (112) of the sensor structure (110).
13. The integrated MEMS chip according to claim 12, characterized in that: A protective structure (113) is also connected to a surface of the sensor structure (110) corresponding to the auxiliary opening structure (203) on a side facing away from the first substrate (100); in the thickness direction of the first substrate (100), a projection of the auxiliary opening structure (203) on the corresponding sensor structure (110) overlaps with a projection of the protective structure (113) on the corresponding sensor structure (110).
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