A gas distribution device for magnetron sputtering
By designing a gas distribution and supply device in the magnetron sputtering unit, and adopting a detachable sleeve and a decreasing gas distribution pipe structure, the problem of poor process gas uniformity was solved, the film quality was improved, gas consumption was saved, and production costs were reduced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2026-03-27
AI Technical Summary
In existing magnetron sputtering technology, the process gas has poor uniformity, resulting in poor film quality and increasing the amount of process gas used and production costs.
Design a gas distribution and supply device for magnetron sputtering, which adopts a structure with gas distribution units at both ends of the main gas pipe. The gas distribution unit includes a detachable sleeve and a gas distribution pipe. The length of the gas distribution pipe decreases and is arranged perpendicular to the sleeve. The gas holes are evenly distributed on the side wall of the sleeve to achieve uniform coverage of the process gas.
It improves the uniformity of the film, saves on the amount of process gas used, and reduces production costs.
Smart Images

Figure CN119433473B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of magnetron sputtering, specifically to a gas distribution and supply device for magnetron sputtering. Background Technology
[0002] With the widespread application of magnetron sputtering technology in the thin film field, the quality requirements for thin films are becoming increasingly stringent. Among these requirements, film uniformity is particularly important. Existing conventional gas distribution methods use a single pipeline directly connecting to the chamber or cathode. During the reciprocating motion of the sample holder, this easily leads to turbulent flow of the process gas inside the chamber. Furthermore, during equipment operation, the process gas flow can flow towards the vacuum pump's extraction port. These factors result in poor uniformity of the process gas, affecting film quality. To achieve uniform coverage of the target surface, the amount of process gas injected needs to be increased to ensure complete and uniform coverage. This, in turn, increases the amount of process gas used, leading to waste and raising production costs. Summary of the Invention
[0003] This invention aims to overcome the shortcomings of existing technologies by providing a gas distribution and supply device for magnetron sputtering.
[0004] This application provides the following technical solution:
[0005] A gas distribution structure for magnetron sputtering includes a main gas pipe, characterized in that: a gas distribution unit is provided at each end of the main gas pipe, and a corresponding cathode is provided between the two gas distribution units. The gas distribution unit includes: a sleeve detachably connected to the main gas pipe, the lower end of the sleeve is sealed, a set of gas distribution pipes are connected to the main gas pipe inside the sleeve, each gas distribution pipe has a different length, and a set of gas holes are evenly distributed on the side wall of the sleeve near the cathode.
[0006] Based on the above technical solutions, the following further technical solutions are also possible:
[0007] The set of gas distribution pipes consists of five pipes arranged in a row along the diameter direction, with the length of the five gas distribution pipes decreasing sequentially from the side of the far cathode to the side of the near cathode.
[0008] The air distribution pipe does not contact the sleeve.
[0009] There are gaps between the various air distribution pipes in the group of air distribution pipes, and the axial direction of each air distribution pipe is parallel to the sleeve and perpendicular to the axial direction of the main air pipe.
[0010] Advantages of the invention:
[0011] The gas distribution structure provided by this invention improves the uniformity of process gas, thereby enhancing the quality of the thin film formed by magnetron sputtering. It also allows for easier adjustment of the gas distribution on the cathode target. Since the process gas is directly sprayed on both sides of the cathode, it can uniformly cover the target surface and save on the amount of process gas used. Attached Figure Description
[0012] Figure 1 This is a schematic diagram of the structure of the present invention;
[0013] Figure 2 yes Figure 1 A magnified view along direction A in the image. Detailed Implementation
[0014] like Figure 1 and 2 As shown, a gas distribution structure for magnetron sputtering includes a main gas pipe 1, to which a process gas inlet pipe 1a is connected.
[0015] A gas distribution unit 2 is provided at each end of the main gas pipe 1, and a space is provided between the two gas distribution units 2 for placing the corresponding matching cathodes 3.
[0016] The air distribution unit 2 includes: a sleeve 2a that is detachably connected to the main air pipe 1 via a thread. The lower end of the sleeve 2a is a sealed structure. A set of five air distribution pipes 2b with the same air output are connected to the main air pipe 1 inside the sleeve 2a. They are arranged in a row along the diameter direction and there is a gap between each air distribution pipe 2b. The axial direction of each air distribution pipe 2b is parallel to the sleeve 2a and perpendicular to the axial direction of the main air pipe 1.
[0017] The lengths of the five gas distribution pipes 2b decrease sequentially from the side far from the cathode 3 to the side near the cathode 3, and the decreasing lengths are all the same. A set of air holes 2c are evenly distributed on the cylinder wall of the sleeve 2a on the side near the cathode 3.
[0018] During magnetron sputtering, the process gas evenly covers the surface of the cathode target through pores 2c, thereby improving the uniformity of the thin film. Depending on the actual sputtering conditions during production, some pores 2c can be sealed with sealing mud or tape to improve the applicability of the device.
Claims
1. A gas distribution structure for magnetron sputtering, comprising a main gas pipe (1), characterized in that: A gas distribution unit (2) is provided at each end of the main gas pipe (1), and a corresponding cathode (3) is provided between the two gas distribution units (2). The gas distribution unit (2) includes: a sleeve (2a) detachably connected to the main gas pipe (1), the lower end of the sleeve (2a) is sealed, and a set of gas distribution pipes (2b) are connected to the main gas pipe (1) inside the sleeve (2a). Each gas distribution pipe (2b) has a different length, and a set of air holes (2c) are evenly distributed on the cylinder wall of the sleeve (2a) near the cathode (3). The set of gas distribution pipes (2b) consists of five pipes arranged in a row along the diameter direction. The length of the five gas distribution pipes (2b) decreases one by one from the side of the far cathode (3) to the side of the near cathode (3).
2. The gas distribution structure for magnetron sputtering according to claim 1, characterized in that: The air distribution pipe (2b) does not contact the sleeve (2a).
3. The gas distribution structure for magnetron sputtering according to claim 1, characterized in that: There is a gap between each air distribution pipe (2b) in the set of air distribution pipes (2b), and the axial direction of each air distribution pipe (2b) is parallel to the sleeve (2a).
Citation Information
Patent Citations
Sputtering cathode gas distribution system for optical film
CN111876742A
Magnetron sputtering gas distribution device capable of improving gas distribution uniformity
CN216972664U