Air intake device and semiconductor apparatus

Abstract

This invention provides an air intake device and a semiconductor device. The air intake device includes a flow equalization structure and a gas distribution structure. The flow equalization structure includes multiple annular flow equalization cavities and multiple air intake pipes corresponding to and connected to each annular flow equalization cavity. Each annular flow equalization cavity has multiple uniformly distributed first air outlets on its radially outer ring side. The gas distribution structure includes multiple annular gas distribution cavities coaxially arranged with the annular flow equalization cavities. Multiple second air outlets are non-uniformly distributed on the outer peripheral surface of the corresponding annular gas distribution cavities. Furthermore, the gas distribution structure is movable between a first position and a second position. In the first position, the gas distribution structure surrounds the outer periphery of the flow equalization structure, and the air intake end of each annular gas distribution cavity is sealed and connected to the first air outlet to allow non-uniform gas discharge through the second air outlets. In the second position, the gas distribution structure is offset from the outer peripheral surface of the flow equalization structure, so that the first air outlets are exposed in the semiconductor process chamber to achieve uniform gas discharge.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment manufacturing, and more specifically, to an air intake device and a semiconductor device. Background Technology

[0002] Currently, horizontal spray inlet devices are widely used in Chemical Vapor Deposition (CVD) processes. These devices primarily deliver external process gases into the process chamber and allow the process gas flow into the chamber in a divergent manner to handle multi-wafer processing scenarios.

[0003] However, with the continuous advancement of electronic device technology, the processing requirements for wafers have become increasingly diverse, such as requiring uniform or non-uniform surface doping. To meet the uniformity requirements of wafer doping, existing horizontal spray inlet devices typically need to ensure the uniformity of the ejected gas in the circumferential direction, so as to guarantee that the gas velocity is as equal as possible in all directions around the circumference. To achieve this, the outlet channels of existing horizontal spray inlet devices are usually uniformly distributed on the outer periphery and in fixed positions. This makes them unsuitable for non-uniform doping processes on wafers, such as processing concave wafer surfaces. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an air intake device and a semiconductor device that can be applied to uniform and non-uniform process requirements.

[0005] To achieve the objectives of this invention, an air intake device is provided, applied in a semiconductor process chamber; it includes a flow equalization structure and a gas distribution structure; wherein,

[0006] The flow equalization structure includes multiple annular flow equalization cavities arranged coaxially and multiple air inlet pipes corresponding to and connected to each annular flow equalization cavity; the multiple annular flow equalization cavities are stacked along the axis of the annular flow equalization cavity, and each annular flow equalization cavity has multiple first air outlet holes evenly distributed on the outer ring side in the radial direction.

[0007] The gas distribution structure includes multiple annular gas distribution chambers coaxially arranged with the annular flow equalization chamber, and the multiple annular gas distribution chambers are stacked along the axis of the annular flow equalization chamber; the multiple annular gas distribution chambers correspond one-to-one with the multiple annular flow equalization chambers; the gas distribution structure has multiple second gas outlets communicating with each of the annular gas distribution chambers respectively, and the multiple second gas outlets are non-uniformly distributed on the outer peripheral surface of the corresponding annular gas distribution chamber; the gas inlet end of each annular gas distribution chamber is located on its inner peripheral surface;

[0008] The gas distribution structure is movable between a first position and a second position along the axis of the annular uniform flow cavity;

[0009] When the gas distribution structure is in the first position, the gas distribution structure is arranged around the outer periphery of the flow equalization structure, and the inlet end of each annular gas distribution cavity is sealed and connected to the first outlet of the corresponding annular flow equalization cavity; when the gas distribution structure is in the second position, the gas distribution structure is offset from the outer peripheral surface of the flow equalization structure, so that the first outlet of each annular flow equalization cavity is exposed in the semiconductor process chamber.

[0010] Optionally, the outer peripheral surface of each of the annular gas distribution chambers is divided into multiple alternating first regions and multiple second regions along the circumferential direction;

[0011] The proportion of the total air outlet area of ​​all the second air outlets in the first region to the area of ​​the first region is less than the proportion of the total air outlet area of ​​all the second air outlets in the second region to the area of ​​the second region.

[0012] Optionally, the aperture of the second vent in the second region is larger than the aperture of the second vent in the first region, and / or the distribution density of the second vent in the second region is greater than the distribution density of the second vent in the first region.

[0013] Optionally, a tray is provided in the process chamber, and the air intake device is coaxially arranged with the tray; multiple sub-trays for carrying wafers are provided on the tray, and the multiple sub-trays are distributed around the central axis of the tray;

[0014] The number of the second regions is the same as the number of the sub-trays, and multiple second regions can be set to correspond one-to-one with multiple sub-tray positions.

[0015] Optionally, the total area of ​​all the second regions accounts for less than 10% of the total area of ​​the outer circumferential surface of the annular gas distribution cavity.

[0016] Optionally, the gas distribution structure includes: a plurality of annular second partition plates stacked and spaced apart along the axis of the annular uniform flow cavity, and an annular gas distribution plate surrounding the plurality of second partition plates;

[0017] The outer periphery of each of the multiple second partition plates is sealed to the annular gas distribution plate, and the inner periphery of each of the multiple second partition plates can cooperate with the outer peripheral surface of the uniform flow structure to form the annular gas distribution cavity between any two adjacent partition plates.

[0018] Multiple second air outlets are provided on the annular air distribution plate.

[0019] Optionally, all of the plurality of air intake pipes are annular air intake pipes, and the plurality of annular air intake pipes are sequentially nested along the radial direction of the annular uniform flow cavity;

[0020] The annular air intake pipe is located above the corresponding annular flow equalization cavity. The larger the diameter of the annular air intake pipe, the lower the annular flow equalization cavity it connects to.

[0021] Optionally, it also includes a drive assembly located above the plurality of annular uniform flow cavities, the drive assembly including a transmission component and a drive source;

[0022] The transmission component is fixed to the gas distribution structure;

[0023] The drive source is used to drive the transmission component to move along the axis of the uniform flow structure.

[0024] Optionally, the driving source includes a ring electromagnet; the transmission component is made of a ferromagnetic material;

[0025] The electromagnet is used to attract or repel the transmission component to drive the transmission component to move.

[0026] Optionally, the air intake device further includes a mounting assembly; the outer periphery of the mounting assembly is sealed to a mounting hole at the top of the process chamber;

[0027] The mounting assembly has a mounting through hole; the plurality of air intake pipes and the electromagnet are all disposed inside the mounting through hole;

[0028] The transmission component is located below the electromagnet, and when the gas distribution structure is in the second position, both the transmission component and the gas distribution structure are located inside the mounting through hole.

[0029] Optionally, the inner circumferential surface of the mounting through hole and the outer circumferential surface of the transmission member each have a matching limiting boss to restrict the transmission member from moving downward until the gas distribution structure is in the first position and stops moving.

[0030] Optionally, the air intake device further includes a flow control component; the flow control component is used to control the air intake flow of the plurality of air intake pipes.

[0031] As another technical solution, the present invention also provides a semiconductor device, which includes a semiconductor process chamber and an air intake device as described above, wherein the air intake device is disposed in the semiconductor process chamber for supplying process gas into the process chamber.

[0032] The present invention has the following beneficial effects:

[0033] The gas intake device provided by this invention includes a flow equalization structure extending into a semiconductor process chamber at one end and a gas distribution structure arranged around the flow equalization structure. Specifically, the flow equalization structure has a plurality of first gas outlets evenly distributed on its outer peripheral surface for uniform gas output; the gas distribution structure has second gas outlets non-uniformly distributed on its outer peripheral surface for non-uniform gas output; and the gas distribution structure can be moved to the outer periphery of the flow equalization structure and communicate with the plurality of first gas outlets, thereby non-uniformly delivering gas to the semiconductor process chamber; the gas distribution structure can also be moved to a position away from the outer periphery of the flow equalization structure, so that the plurality of evenly distributed first gas outlets are exposed in the reaction chamber, thereby uniformly delivering gas to the semiconductor process chamber. In this way, by moving the position of the gas distribution structure, the gas output state of the gas intake device can be switched, thereby adapting to various different process requirements. Attached Figure Description

[0034] Figure 1 A schematic diagram of the air intake device provided in an embodiment of the present invention when the gas distribution structure is in the first position;

[0035] Figure 2 A schematic diagram of the air intake device provided in an embodiment of the present invention when the gas distribution structure is in the second position;

[0036] Figure 3 This is a schematic diagram of the gas distribution structure provided in an embodiment of the present invention;

[0037] Figure 4 A partial view of the air intake device provided in an embodiment of the present invention applied to a semiconductor process chamber having multiple sub-trays;

[0038] Figure 5 This is a simplified structural diagram of the air intake device and semiconductor process chamber provided in an embodiment of the present invention;

[0039] Figure 6 This is a partial enlarged view of the gas distribution structure provided in an embodiment of the present invention;

[0040] Figure 7 This is a schematic diagram of the transmission component provided in an embodiment of the present invention;

[0041] Figure 8 An intake flow rate curve of a uniform flow structure provided in an embodiment of the present invention. Detailed Implementation

[0042] To enable those skilled in the art to better understand the technical solutions of the present invention, the air intake device and semiconductor device provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0043] To address the problem that existing air intake devices are difficult to adapt to the requirements of uniform and non-uniform processes, this embodiment provides an air intake device for use in semiconductor process chambers, which is used to introduce external process gas into the interior of the semiconductor process chamber.

[0044] like Figure 1 and Figure 2 As shown, the air intake device includes a flow equalization structure 1 and a gas distribution structure 2.

[0045] The flow equalization structure 1 includes multiple annular flow equalization cavities 12 arranged coaxially and multiple air inlet pipes 13 corresponding to and connected to each annular flow equalization cavity 12. The multiple annular flow equalization cavities 12 are stacked along their axes, and each annular flow equalization cavity 12 has multiple uniformly distributed first air outlet holes 11 on its radially outer ring side, so that the flow equalization structure 1 has a uniform air outlet function. Specifically, at least multiple annular flow equalization cavities 12 in the flow equalization structure 1 extend into the semiconductor process chamber. It should be noted that the above-mentioned "uniform distribution" means that the multiple first air outlet holes 11 have the same diameter and are uniformly distributed on the outer peripheral surface S1 of the annular flow equalization cavity 12.

[0046] The gas distribution structure 2 includes multiple annular gas distribution chambers 21 coaxially arranged with the annular flow equalization chamber 12. These annular gas distribution chambers 21 are stacked along the axis of the annular flow equalization chamber 12; each annular gas distribution chamber 21 corresponds one-to-one with the annular flow equalization chamber 12. Figure 3 As shown, the gas distribution structure has a plurality of second air outlets 211 communicating with each annular gas distribution cavity 21. Specifically, each annular gas distribution cavity 21 has an inner circumferential surface and an outer circumferential surface. The air inlet end of each annular gas distribution cavity 21 is located on its inner circumferential surface, and the plurality of second air outlets 211 corresponding to the annular gas distribution cavity 21 are non-uniformly distributed on the outer circumferential surface S2 of the annular gas distribution cavity 21.

[0047] Furthermore, the gas distribution structure 2 can move between a first position and a second position along the axis of the annular uniform flow cavity 12. Specifically, as shown... Figure 1 As shown, when the gas distribution structure 2 is in the first position, the inner circumferential surfaces of multiple annular gas distribution chambers 21 are arranged around the flow equalization structure, and the air inlet end of each annular gas distribution chamber 21 is opposite to the outer circumferential surface S1 of the corresponding annular flow equalization chamber 12, and the air inlet end is sealed and connected to multiple first air outlets 11; as shown Figure 2 As shown, when the gas distribution structure 2 is in the second position, the gas distribution structure 2 is offset from the outer peripheral surface S1 of the annular uniform flow cavity 12, so that the outer peripheral surface S1 and the first gas outlet 11 thereon are exposed in the semiconductor process chamber, thereby uniformly delivering process gas into the chamber.

[0048] In this way, by moving the position of the gas distribution structure 2, the uniform gas output state and the non-uniform gas output state of the gas inlet device can be switched, thus adapting to both uniform and various different process requirements. Moreover, the movement of the gas distribution structure 2 can be performed during the process, so there is no need to open the cavity, thereby ensuring the continuous operation of the process and meeting some process requirements that combine non-uniform and uniform gas output.

[0049] In some embodiments, such as Figure 3 As shown, the outer peripheral surface S2 of the annular gas distribution cavity 21 of the gas distribution structure 2 is divided into multiple first regions A and multiple second regions B. The total outlet area of ​​all the second gas outlets 211 in the first region A accounts for a smaller percentage of the area of ​​the first region A than the total outlet area of ​​all the second gas outlets 211 in the second region B accounts for a smaller percentage of the area of ​​the second region B. This results in a higher flow rate and velocity of the process gas flowing out of the second region B than that flowing out of the first region A, creating a concentration difference in the circumferential direction of the gas environment inside the semiconductor process chamber.

[0050] In some preferred embodiments, the total area of ​​all second regions B accounts for less than 10% of the total area of ​​the outer peripheral surface S2 of all annular gas distribution chambers 21.

[0051] In some embodiments, the diameter of the second vent 211 in the second region B is larger than the diameter of the second vent 211 in the first region A. Since a larger vent diameter results in lower flow resistance and a greater pressure drop, the flow velocity and flow rate of the process gas at the larger diameter vent 211 are both greater than those at the smaller diameter vent 211. Alternatively, the distribution density of the second vent 211 in the second region B is greater than that in the first region A, and the greater the number of second vents 211, the greater the flow rate of the process gas in that region. Or, both the diameter and distribution density of the second vent 211 in the second region B are greater than those in the first region A. Specifically, the diameter and distribution density of the second vent 211 in the first region A and the second region B can be set and processed according to process requirements.

[0052] It should be noted that in some special cases, air vents may not be provided in the first area A.

[0053] In some embodiments, such as Figure 4 As shown, a tray 3 is provided in the semiconductor process chamber, and an air intake device is coaxially arranged with the tray 3. Specifically, the air intake device is located at the center of the top of the semiconductor process chamber; moreover, the tray 3 in the semiconductor process chamber is coaxially arranged with the semiconductor process chamber, and the tray 3 can rotate clockwise or counterclockwise around its own axis.

[0054] The tray 3 is provided with a plurality of sub-trays 31 for carrying wafers, and the plurality of sub-trays 31 are distributed around the central axis of the tray 3. Moreover, in some preferred embodiments, the sub-trays 31 can also rotate clockwise or counterclockwise along their own axes. The number of second regions B is the same as the number of sub-trays 31, and correspondingly, the number of first regions A is also the same as the number of sub-trays 31; moreover, the plurality of second regions B can be arranged one-to-one with the positions of the plurality of sub-trays 31 to form a corresponding non-uniform gas flow field in each sub-tray 31.

[0055] In some preferred embodiments, multiple sub-pallets 31 are evenly distributed around the central axis of pallet 3; the number of second regions B is the same as the number of sub-pallets 31, and the second regions B are evenly distributed in the circumferential direction of the outer peripheral surface S2 of the annular gas distribution cavity 21. Thus, as pallet 3 rotates, each second region B can be configured to correspond one-to-one with all the sub-pallets 31. For example, when pallet 3 rotates to a position where the multiple second regions B correspond one-to-one with the central regions of the multiple sub-pallets 31, the amount of process gas in the central region of the sub-pallet 31 is greater than the amount of process gas in the edge region, thereby forming a thin film with a thick center and thin edges on the wafer surface in the sub-pallet 31, meeting the process requirements for processing convex wafers. As another example, when pallet 3 rotates to a position where the multiple second regions B correspond one-to-one with the interval regions between the multiple sub-pallets 31, the amount of process gas in the edge region of the sub-pallet 31 is greater than the amount of process gas in the central region, thereby forming a thin film with a thick edge and thin center on the wafer surface in the sub-pallet 31, meeting the process requirements for processing concave wafers.

[0056] Preferably, both the tray 3 and the sub-tray 31 are made of graphite material.

[0057] In some embodiments, such as Figure 5 As shown, the air intake device also includes a flow control component 6. This component controls the airflow through the multiple air intake pipes 13, for example, a mass flow controller (MFC). Specifically, the flow control component is, for example, located at the air intake end of the flow equalization structure 1. Preferably, the flow control component 6 is used to control the periodic air intake of the flow equalization structure 1 during the rotation of the tray 3, for example, by... Figure 8 The air intake flow curve shown indicates air intake. Furthermore, when the gas distribution structure 2 is in the first position, it is also possible to allow air to enter the gas distribution structure 2 periodically.

[0058] For example, when tray 3 rotates to a position where the center regions of multiple second regions B correspond one-to-one with the center regions of multiple sub-trays 31, the intake flow rate can be controlled to increase to its peak value, thereby making the amount of process gas in the center region of sub-tray 31 greater than the amount of process gas in the edge region. Conversely, during periods when the multiple second regions B do not correspond one-to-one with the center regions of multiple sub-trays 31, i.e., during the process of tray 3 rotating to the next position where the center regions of multiple second regions B correspond one-to-one with the center regions of multiple sub-trays 31, the intake flow rate can be controlled to decrease to its minimum value. During this period, the remaining process gas inside the semiconductor process chamber tends to become uniform under the influence of the wafer and tray 3, and thus uniformly doped onto the wafer surface. In this way, after a certain processing time, thin films with a thicker center and thinner edges can be deposited on multiple wafers in multiple sub-trays, respectively.

[0059] For example, when tray 3 rotates to a position where multiple second regions B correspond one-to-one with the gaps between adjacent sub-trays 31, the intake flow rate can be controlled to increase to its peak value, thereby increasing the amount of process gas in the edge region of sub-tray 31 compared to the central region. Conversely, during periods when multiple second regions B do not correspond one-to-one with the gaps between adjacent sub-trays 31—that is, during the process of tray 3 rotating again to the next position where multiple second regions B correspond one-to-one with the gaps between adjacent sub-trays 31—the intake flow rate can be controlled to decrease to its minimum value. During this period, the remaining process gas inside the semiconductor process chamber tends to become uniform under the influence of the wafer and tray 3, and thus uniformly doped onto the wafer surface. In this way, after a certain processing time, thin films with a thin center and thick edges can be deposited on multiple wafers in multiple sub-trays, respectively.

[0060] Furthermore, the variation law of the intake flow rate of the uniform flow structure 1 in this embodiment is not limited to that shown below. Figure 8 The airflow curve shown can also be any curve, such as a sine curve, cosine curve, quadratic function curve, cubic function curve, exponential function curve, etc., and can be tested and fitted according to parameters such as the number of sub-trays 31, the size of a single wafer, process requirements, and the rotation speed of tray 3. Moreover, as Figure 5 As shown, in some embodiments, a rotation monitor 7 is also provided inside the semiconductor process chamber. It is set on the rotation axis of the tray 3 to monitor the rotation angle of the tray 3 and send the detection signal to the flow control component 5 in real time so that the flow control component 5 can adjust the air intake flow of the equalization structure 1 according to the rotation angle of the tray 3.

[0061] In some embodiments, such as Figure 3 As shown, the gas distribution structure 2 includes a plurality of second partition plates 22 stacked and spaced apart along the axis of the annular uniform flow cavity 12, and an annular gas distribution plate 23 surrounding the plurality of second partition plates 22. Specifically, as shown... Figure 3As shown, the annular gas distribution plate 23 is generally cylindrical. The outer periphery of multiple second partition plates 22 is connected to the annular gas distribution plate 23, and the inner periphery of each second partition plate 22 can engage with the outer peripheral surface S1 of the corresponding annular flow equalization cavity 12. Thus, when the gas distribution structure 2 reaches the first position, the second partition plate 22 can be sealed to the outer peripheral surface S1 of the corresponding annular flow equalization cavity 12, forming multiple annular gas distribution cavities 21 between any two adjacent partition plates. That is, the inner peripheral surface of the annular gas distribution plate 23, the upper surface of the multiple second partition plates 22, and the lower surface of the multiple annular gas distribution plates 22 enclose multiple annular gas distribution cavities 21. The second air outlets 211 of the multiple annular gas distribution cavities 21 are opened on the annular gas distribution plate 23; that is, the outer peripheral surface of the annular gas distribution plate 23 serves as the outer peripheral surface S2 of the gas distribution structure.

[0062] In some embodiments, such as Figure 6 As shown, multiple air intake pipes 13 are all annular air intake pipes, and these annular air intake pipes are sequentially nested along the radial direction of the annular flow equalization cavity 12. The annular air intake pipes are located above their corresponding annular flow equalization cavities 12, and the larger the diameter of the annular air intake pipe, the lower the annular flow equalization cavity 12 it connects to.

[0063] In some specific implementation methods, such as Figure 6 As shown, the aforementioned multiple air intake pipes 13 are, for example, composed of a cylindrical plate, multiple air distribution pipes, and multiple partition plates 14. The multiple air distribution pipes and multiple partition plates 14 are arranged in a one-to-one correspondence, with the partition plates 14 surrounding the outer periphery of the corresponding air distribution pipe and connected to its end. The multiple air distribution pipes are nested sequentially in ascending order of diameter, and the corresponding multiple air distribution plates are stacked sequentially from bottom to top. Adjacent air distribution pipes are spaced apart, and adjacent air distribution plates are also spaced apart, forming multiple non-interconnected air intake pipes. That is, the inner and outer circumferential surfaces of adjacent cylindrical plates, the upper and lower surfaces of adjacent partition plates 14, and the inner circumferential surface of the cylindrical plate enclose multiple air intake pipes, and the multiple air intake pipes 13 are stacked vertically. The first air outlet 11 of the multiple air intake pipes 13 is opened on the cylindrical plate; the outer circumferential surface of the cylindrical plate serves as the outer circumferential surface S1 of the annular flow equalization cavity 12. Specifically, the multiple unconnected air intake pipes 13 can be divided into two groups, so that the two process gases required for the two processes can be introduced into the two groups of air intake pipes respectively, thereby preventing the two process gases from entering the semiconductor process chamber before they are connected. Figure 1 Taking the uniform flow structure 1 shown as an example, it has five layers of air inlet pipes 13 stacked in the vertical direction, wherein the first, third and fifth layers of air inlet pipes 13 are used to introduce the first process gas, and the second and fourth layers of air inlet pipes 13 are used to introduce the second process gas.

[0064] Furthermore, the spacing between adjacent second partition plates 22 is the same as the spacing between partition plates 14, so that when the gas distribution structure 2 moves to the first position, the multiple annular gas distribution chambers 21 can be connected to the multiple air intake pipes 13 in a one-to-one correspondence.

[0065] Preferably, the spacing between multiple adjacent air distribution pipes is the same, and the spacing between multiple adjacent air distribution plates is the same, so that the width of multiple air intake pipes 13 is consistent, thereby improving the uniformity of air output of the uniform flow structure 1.

[0066] In some preferred embodiments, the flow control component controls the intake flow rate of each intake pipe 13. Alternatively, the flow control component includes multiple mass flow controllers connected to each intake pipe in a one-to-one correspondence.

[0067] In some embodiments, such as Figure 1 As shown, the air intake device also includes a drive assembly 5 located above a plurality of annular flow equalization chambers 12. The drive assembly 5 includes a transmission member 51 and a drive source 52. The transmission member 51 is connected and fixed to one end of the gas distribution structure 2 away from the semiconductor process chamber. The drive source 52 is used to drive the transmission member 51 to move along the axial direction of the flow equalization structure 1, thereby driving the gas distribution structure 2 to move between a first position and a second position.

[0068] In some embodiments, the driving source 52 includes a ring-shaped electromagnet; it is typically magnetic when energized and loses its magnetism when de-energized, such as a ring-shaped electromagnetic chuck. The transmission member 51 is made of a ferromagnetic material. The electromagnet is used to attract or repel the transmission member to drive its movement. In some embodiments, such as Figure 1 As shown, the air intake device also includes a mounting assembly 4. The outer periphery of the mounting assembly 4 is sealed to a mounting hole formed at the top of the semiconductor process chamber. A mounting through hole is provided in the mounting assembly 4.

[0069] In the uniform flow structure 1, multiple air intake pipes 13 and electromagnets are all housed inside the mounting through holes. Correspondingly, such as... Figure 1 As shown, the gas distribution structure 2 is disposed in the cylindrical space 41 between the flow equalization structure 1 and the mounting through hole. The outer periphery of the transmission member 51 can mate with the inner peripheral surface of the mounting through hole to prevent the cylindrical space 41 from communicating with the environment inside the semiconductor process chamber, reducing the risk of contamination of the semiconductor process chamber, and also preventing interference with the gas flow distribution inside the semiconductor process chamber. The transmission member 51 is located below the electromagnet, and when the gas distribution structure 2 is in the second position, both the transmission member and the gas distribution structure are located inside the mounting through hole.

[0070] When the electromagnet is energized, it attracts the transmission component 51, thereby driving the transmission component 51 to raise the gas distribution structure 2 to the second position; when the electromagnet is de-energized, it no longer attracts the transmission component 51, and the gas distribution structure 2 automatically descends to the second position under its own gravity.

[0071] Specifically, the aforementioned annular electromagnetic chuck can be positioned above the mounting through hole, for example, it can be embedded inside the mounting assembly 4; the transmission component 51 is annular, connected to the top of the gas distribution structure 2, and located in the cylindrical space 41 between the flow equalization structure 1 and the mounting through hole.

[0072] In some embodiments, the inner peripheral surface of the mounting through hole and the outer peripheral surface of the transmission member each have a boss 42 with a matching shape to restrict the transmission member from moving downward until the gas distribution structure is in a first position and stops moving.

[0073] Furthermore, in some specific implementations, such as Figure 1 As shown, the limiting boss 42 is located at the bottom of the mounting through hole and protrudes outward from the inner circumferential surface of the mounting through hole. The inner circumferential surface of the limiting boss 42 mates with the gas distribution structure 2, allowing relative sliding between the gas distribution structure 2 and the limiting boss 42, and sealing the cylindrical space 41 between the flow equalization structure 1 and the mounting through hole. Figure 7 As shown, the transmission component 51 has a limiting flange 53 protruding outward from its outer circumference; when the gas distribution structure 2 moves to the first position, the lower surface of the limiting flange 53 can abut against the upper surface of the limiting flange 53, thereby restricting the position of the gas distribution structure 2 and preventing the gas distribution structure 2 from coming out of the mounting through hole.

[0074] In some embodiments, the transmission component 51 is connected to the gas distribution structure 2 by means of threads, snap-fit, etc., so that the operator can manually replace the gas distribution structure 2 and ensure that the connection is firm and not easy to loosen.

[0075] In some preferred embodiments, when the gas distribution structure 2 moves to the first position, its end face is flush with the bottom surface of the flow equalization structure 1; when the gas distribution structure 2 moves to the second position, its end face is flush with the bottom surface of the mounting assembly 4. This ensures that the bottom end face of the entire air intake device and the bottom end face of the mounting assembly 4 are flat, thereby avoiding affecting the uniformity of the flow field inside the semiconductor process chamber.

[0076] As another technical solution, this embodiment also provides a semiconductor device, which includes a semiconductor process chamber and a gas inlet device as described above. The gas inlet device is disposed within the semiconductor process chamber and is used to deliver process gas into the process chamber. The semiconductor process chamber is, for example, a CVD chamber or an MOCVD chamber.

[0077] The air intake device and semiconductor equipment provided in this embodiment can switch between uniform air intake mode and non-uniform air intake mode by adjusting the position of the non-uniform gas distribution structure during the process, thereby meeting the different air intake requirements of different processes.

[0078] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An air intake device, applied in a semiconductor process chamber; characterized in that, Includes flow uniformity structures and gas distribution structures; among which, The flow equalization structure includes multiple annular flow equalization cavities arranged coaxially and multiple air inlet pipes corresponding to and connected to each annular flow equalization cavity; the multiple annular flow equalization cavities are stacked along the axis of the annular flow equalization cavity, and each annular flow equalization cavity has multiple first air outlet holes evenly distributed on the outer ring side in the radial direction. The gas distribution structure includes multiple annular gas distribution chambers coaxially arranged with the annular flow equalization chamber, and the multiple annular gas distribution chambers are stacked along the axis of the annular flow equalization chamber; the multiple annular gas distribution chambers correspond one-to-one with the multiple annular flow equalization chambers; the gas distribution structure has multiple second gas outlets communicating with each of the annular gas distribution chambers respectively, and the multiple second gas outlets are non-uniformly distributed on the outer peripheral surface of the corresponding annular gas distribution chamber; the gas inlet end of each annular gas distribution chamber is located on its inner peripheral surface; The gas distribution structure can move between a first position and a second position along the axis of the annular uniform flow cavity; When the gas distribution structure is in the first position, the gas distribution structure is arranged around the outer periphery of the flow equalization structure, and the inlet end of each annular gas distribution cavity is sealed and connected to the first outlet of the corresponding annular flow equalization cavity; when the gas distribution structure is in the second position, the gas distribution structure is offset from the outer peripheral surface of the flow equalization structure, so that the first outlet of each annular flow equalization cavity is exposed in the semiconductor process chamber.

2. The air intake device according to claim 1, characterized in that, The outer peripheral surface of each of the annular gas distribution chambers is divided into multiple alternating first regions and multiple second regions along the circumferential direction; The proportion of the total air outlet area of ​​all the second air outlets in the first region to the area of ​​the first region is less than the proportion of the total air outlet area of ​​all the second air outlets in the second region to the area of ​​the second region.

3. The air intake device according to claim 2, characterized in that, The diameter of the second vent in the second region is larger than the diameter of the second vent in the first region, and / or the distribution density of the second vent in the second region is greater than the distribution density of the second vent in the first region.

4. The air intake device according to claim 2, characterized in that, The process chamber is provided with a tray, and the air intake device is coaxially arranged with the tray; the tray is provided with a plurality of sub-trays for carrying wafers, and the plurality of sub-trays are distributed around the central axis of the tray; The number of the second regions is the same as the number of the sub-trays, and multiple second regions can be set to correspond one-to-one with multiple sub-tray positions.

5. The air intake device according to claim 2, characterized in that, The total area of ​​all the second regions accounts for less than 10% of the total area of ​​the outer circumference of the annular gas distribution cavity.

6. The air intake device according to claim 1, characterized in that, The gas distribution structure includes: a plurality of annular second partition plates stacked and spaced apart along the axis of the annular uniform flow cavity, and an annular gas distribution plate surrounding the plurality of second partition plates; The outer periphery of each of the multiple second partition plates is sealed to the annular gas distribution plate, and the inner periphery of each of the multiple second partition plates can cooperate with the outer peripheral surface of the uniform flow structure to form the annular gas distribution cavity between any two adjacent partition plates. Multiple second air outlets are provided on the annular air distribution plate.

7. The air intake device according to claim 1, characterized in that, All of the multiple air intake pipes are annular air intake pipes, and the multiple annular air intake pipes are sequentially nested along the radial direction of the annular uniform flow cavity; The annular air intake pipe is located above the corresponding annular flow equalization cavity. The larger the diameter of the annular air intake pipe, the lower the annular flow equalization cavity it connects to.

8. The air intake device according to claim 1, characterized in that, It also includes a drive assembly located above the plurality of annular uniform flow cavities, the drive assembly including a transmission component and a drive source; The transmission component is fixed to the gas distribution structure; The drive source is used to drive the transmission component to move along the axis of the uniform flow structure.

9. The air intake device according to claim 8, characterized in that, The driving source includes a ring electromagnet; the transmission component is made of a ferromagnetic material. The electromagnet is used to attract or repel the transmission component to drive the transmission component to move.

10. The air intake device according to claim 9, characterized in that, The air intake device also includes a mounting assembly; the outer periphery of the mounting assembly is sealed to the mounting hole at the top of the process chamber; The mounting assembly has a mounting through hole; the plurality of air intake pipes and the electromagnet are all disposed inside the mounting through hole; The transmission component is located below the electromagnet, and when the gas distribution structure is in the second position, both the transmission component and the gas distribution structure are located inside the mounting through hole.

11. The air intake device according to claim 10, characterized in that, The inner circumferential surface of the mounting through hole and the outer circumferential surface of the transmission component each have a matching limiting boss to restrict the transmission component from moving downward until the gas distribution structure is in the first position and stops moving.

12. The air intake device according to claim 1, characterized in that, The air intake device also includes a flow control component; the flow control component is used to control the air intake flow of the plurality of air intake pipes.

13. A semiconductor device, characterized in that, It includes a semiconductor process chamber and an air intake device as described in any one of claims 1-12, wherein the air intake device is disposed within the semiconductor process chamber for supplying process gas into the process chamber.

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