Infrared resistor array current drive fault testing method and system

Abstract

The present application relates to the technical field of resistor array current testing, and specifically to a method and system for testing current drive faults of infrared resistor arrays, the method comprising: determining the current fluctuation of each resistor element; determining the current difference between each resistor element and the remaining resistor elements based on the difference and similarity of all current data between each resistor element and the remaining resistor elements; determining the drive fault recognition of each resistor element based on the difference in current fluctuation between different resistor elements, and combining the current difference, and testing the current drive fault of the infrared resistor array. The present application performs fault testing on resistor elements by comprehensively analyzing the difference in current change characteristics between normal resistor elements and abnormal resistor elements, as well as the difference in current change characteristics between different resistor elements, thereby improving the accuracy of resistor element testing.

Description

Technical Field

[0001] The present application relates to the technical field of resistor array current testing, and in particular to a method and system for testing infrared resistor array current drive faults. Background Art

[0002] As the core device of infrared imaging, the infrared resistor array has multiple resistor elements. As micro-radiation elements, when current flows through them, the resistor elements generate heat, thereby generating infrared radiation. By precisely controlling the current flowing through each resistor element, the temperature of each resistor element can be controlled, thereby achieving the purpose of displaying infrared images.

[0003] Traditional technology generally performs drive fault detection by applying voltage to the infrared resistor array, lighting up the entire resistor array and measuring its overall infrared radiation characteristics. However, traditional technology is prone to the problem that the infrared radiation of one resistor element in the infrared resistor array is weak, but the radiation of the surrounding resistor elements is strong, causing the high-intensity radiation to diffuse to the low-intensity radiation area, causing local abnormal conditions, making it impossible to accurately locate a single faulty resistor element, and reducing the accuracy of infrared resistor array fault testing. Summary of the invention

[0004] In order to solve the above technical problems, the purpose of this application is to provide an infrared resistor array current drive fault test method and system, and the technical solutions adopted are as follows:

[0005] In a first aspect, an embodiment of the present application provides an infrared resistor array current drive fault testing method, the method comprising the following steps:

[0006] Obtaining the current data of each resistor element in the infrared resistor array at all acquisition moments within a preset time period;

[0007] According to the difference of current data between all adjacent acquisition moments of each resistor element, the current trend value of each resistor element is determined, and the current fluctuation degree of each resistor element is determined in combination with the discrete degree of current data at all acquisition moments;

[0008] Based on the difference of all current data between each resistor element and the other resistor elements, determine the current difference index between each resistor element and the other resistor elements, and combine the similarity of all current data between each resistor element and the other resistor elements to determine the current difference between each resistor element and the other resistor elements;

[0009] Based on the difference in current fluctuation between each resistor element and the other resistor elements, determine the fault weight coefficient between each resistor element and the other resistor elements, and determine the fault index between each resistor element and the other resistor elements in combination with the current difference; based on the average distribution of the fault index between each resistor element and all the other resistor elements, determine the driving fault recognition degree of each resistor element;

[0010] Based on the fault recognition degree, the infrared resistor array current drive fault is tested in combination with an abnormality detection algorithm.

[0011] Preferably, the current trend value of each resistor element is the cumulative sum of the differences in current data between all adjacent acquisition moments of each resistor element.

[0012] Preferably, the expression of the current fluctuation of each resistor element is: ; In the formula, Indicates the current fluctuation of resistor element i; Represents the average difference of the current data of resistor element i at all acquisition moments; Indicates the current trend value of resistor element i.

[0013] Preferably, the current difference index between each resistor element and the remaining resistor elements is the distance between all current data of each resistor element and all current data of the remaining resistor elements.

[0014] Preferably, the current difference between each resistor element and the remaining resistor elements is a ratio of a current difference index between each resistor element and the remaining resistor elements to the similarity.

[0015] Preferably, the expression of the fault weight coefficient between each resistor element and the remaining resistor elements is: ; In the formula, represents the fault weight coefficient between resistor element i and resistor element k; Indicates the current fluctuation of resistor element i in the infrared resistor array; Indicates the current fluctuation of resistor element k in the infrared resistor array; A preset constant greater than 0.

[0016] Preferably, the expression of the fault index between each resistor element and the remaining resistor elements is: ; In the formula, Represents the fault index between resistor element i and resistor element k; Indicates the current difference between resistor element i and resistor element k in the infrared resistor array; It represents the fault weight coefficient between resistor element i and resistor element k in the infrared resistor array.

[0017] Preferably, the driving fault recognition degree of each resistor element is an average level of the fault index between each resistor element and all other resistor elements.

[0018] Preferably, the testing of the infrared resistor array current drive fault includes:

[0019] The drive fault recognition degree of all resistor elements in the infrared resistor array is used as the input of the anomaly detection algorithm, and the anomaly score of each resistor element is output;

[0020] If the abnormality score of the resistor element is greater than the preset threshold, the resistor element is faulty, otherwise, the resistor element is normal.

[0021] In the second aspect, an embodiment of the present application also provides an infrared resistor array current drive fault test system, including a memory, a processor, and a computer program stored in the memory and running on the processor, and when the processor executes the computer program, the steps of any one of the above-mentioned infrared resistor array current drive fault test methods are implemented.

[0022] This application has at least the following beneficial effects:

[0023] The present application analyzes the current flowing through the resistor elements of the infrared resistor array, and determines the current fluctuation of each resistor element according to the difference in current data between all adjacent acquisition moments of each resistor element and the degree of discreteness of the current data at all acquisition moments. The beneficial effect is that the possibility of failure of the resistor element can be more accurately judged by analyzing the change characteristics of the current data; the present application determines the current difference between each resistor element and the remaining resistor elements by analyzing the difference and similarity of all current data between each resistor element and the remaining resistor elements. The beneficial effect is that the accuracy of judging the possibility of failure of the resistor element is improved by analyzing the difference between different resistor elements; the present application determines the drive fault recognition degree of each resistor element based on the difference in current fluctuation between each resistor element and the remaining resistor elements, and tests the current drive fault of the infrared resistor array. The beneficial effect is that the possibility of failure of the resistor element in the infrared resistor array can be more accurately judged by combining the change characteristics of the internal current of each resistor element and the difference in current change between different resistor elements. The present application performs fault testing on resistor elements by comprehensively analyzing the differences in current variation characteristics between normal resistor elements and abnormal resistor elements, as well as the differences in current variation characteristics between different resistor elements, thereby improving the accuracy of testing on resistor elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 A flowchart of a method for testing a current drive fault of an infrared resistor array provided by an embodiment of the present application;

[0026] Figure 2 A schematic diagram of a resistor element-temperature characteristic curve provided for an embodiment of the present application;

[0027] Figure 3 A schematic diagram of a drive fault recognition extraction process provided by an embodiment of the present application;

[0028] Figure 4 A schematic diagram of abnormal scores of resistor elements provided in one embodiment of the present application. DETAILED DESCRIPTION

[0029] In order to further explain the technical means and effects adopted by the present application to achieve the predetermined invention purpose, the following is a detailed description of the infrared resistor array current drive fault test method and system proposed in the present application, its specific implementation method, structure, features and effects, in combination with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0030] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0031] The specific scheme of an infrared resistor array current drive fault testing method and system provided by the present application is described in detail below with reference to the accompanying drawings.

[0032] See also Figure 1 , which shows a flow chart of the steps of a method for testing a current drive fault of an infrared resistor array provided by an embodiment of the present application, the method comprising the following steps:

[0033] Step S1: obtaining the current data of each resistor element in the infrared resistor array at all acquisition moments within a preset time period.

[0034] As a micro-radiation element, the resistor element generates heat when current flows through it, thereby generating infrared radiation. Therefore, for a normal resistor element, the intensity of the current is proportional to the intensity of the infrared radiation, that is, the greater the current, the greater the infrared radiation. In order to make the infrared resistor array work, a voltage U is applied to the infrared resistor array, and a current sensor is used to collect current data of each resistor element in the infrared resistor array at all collection moments within a preset time length t, wherein the current collection frequency is set to f.

[0035] It should be noted that the values ​​of voltage U, preset time t and acquisition frequency f are all manually set. In this embodiment, the value of voltage U is 2.5V, the value of preset time t is 1s, and the value of acquisition frequency f is 50Hz. The implementer can also set them according to the specific situation. This embodiment does not impose any special restrictions.

[0036] Step S2: Determine the current trend value of each resistor element according to the difference of the current data between all adjacent acquisition moments of each resistor element, and determine the current fluctuation degree of each resistor element in combination with the discrete degree of the current data at all acquisition moments.

[0037] In an infrared resistor array, the stability of the resistor element is crucial to maintaining normal current flow. In a normal resistor element, the resistance of the resistor element will increase with the use temperature, resulting in an increase in resistance and a decrease in current. However, when a resistor element fails, its resistance value will become unstable, resulting in non-decreasing current fluctuations under constant voltage input. This fluctuation not only affects the stability of the current, but also reduces the reliability and readability of the current data. Preferably, the resistor element-temperature characteristic curve diagram provided in this embodiment is as follows: Figure 2 As shown in the figure, the horizontal axis represents temperature, the unit is ℃; the vertical axis represents resistance value, the unit is Ω; the dotted line represents resistor element 1, and the solid line represents resistor element 2.

[0038] Therefore, by analyzing the change of the current data flowing through the resistor element over time, the possibility of the resistor element failure can be preliminarily determined. Based on the difference of the current data between all adjacent acquisition moments of each resistor element, the current trend value of each resistor element is determined, and combined with the discrete degree of the current data of all acquisition moments of each resistor element, the current fluctuation degree of each resistor element is determined. Specifically:

[0039] S201: Determine the current trend value of each resistor element based on the difference in current data between all adjacent acquisition moments of each resistor element.

[0040] The current trend value of each resistor element is the cumulative sum of the differences in current data between all adjacent acquisition moments of each resistor element.

[0041] It should be noted that there are many methods for measuring the difference between data. In this embodiment, the difference between the current data at adjacent acquisition moments is measured by calculating the difference between the current data at adjacent acquisition moments. The implementer may also use other methods for measuring the difference, such as ratio. Regarding the selection of the method for measuring the difference between data, this embodiment does not impose any special restrictions.

[0042] Further, according to the current trend value of each resistor element, it can be understood that when the tested resistor element is a normal resistor element, as the test time progresses, the resistor element continuously generates heat, causing the resistance of the resistor element to continuously increase, causing the current in the resistor element to continuously decrease, thereby, the current data of the resistor element at an adjacent subsequent acquisition moment is smaller than the current data at a previous acquisition moment, that is, the difference in current data between adjacent acquisition moments is a negative value, and the current trend value of the resistor element is smaller; conversely, when the resistor element fails, as the test time progresses, the resistance value of the resistor element will become unstable, resulting in non-decreasing fluctuations in current under constant voltage input, that is, the current data of the resistor element at an adjacent subsequent acquisition moment is larger than the current data at a previous acquisition moment, that is, the difference in current data between adjacent acquisition moments is a positive value, and the current trend value of the resistor element is larger.

[0043] S202: Determine the current fluctuation of each resistor element based on the current trend value of each resistor element and in combination with the discreteness of the current data of each resistor element at all acquisition moments.

[0044] When a resistor element fails, the resistance of the resistor element will change irregularly, and the current data of the resistor element may suddenly change in a short period of time, and the gap between the sudden current data is relatively discrete. Therefore, by analyzing the change characteristics of the current of the resistor element, the possibility of the failure of the resistor element can be further limited. Specifically:

[0045] Based on the current trend value of each resistor element and combined with the discrete degree of the current data of each resistor element at all acquisition moments, the current fluctuation degree of each resistor element is determined, specifically:

[0046] Current fluctuation of resistor element i The expression is: ; In the formula, Represents the average difference of the current data of resistor element i at all acquisition moments; Indicates the current trend value of resistor element i.

[0047] According to the current fluctuation of each resistor element, it can be understood that in a normal resistor element, due to the fixed input voltage, the resistance value of the resistor element will increase with the running time. Therefore, the current data of all the acquisition moments of the resistor element will gradually decrease with time, the current data change trend is relatively stable, and the readability of the current data is high. For a faulty resistor element, the change of the current data in the resistor element is relatively disordered, and the gap between the current data increases, that is, the average difference of the current data of all the acquisition moments of the resistor element increases, so that for the faulty resistor element, the current fluctuation of its overall current data is greater; on the contrary, for a normal resistor element, the current data in the resistor element shows a regular downward trend, and the reliability and readability of the current data are not affected.

[0048] Step S3: Based on the difference of all current data between each resistor element and the other resistor elements, determine the current difference index between each resistor element and the other resistor elements, and combine the similarity of all current data between each resistor element and the other resistor elements to determine the current difference between each resistor element and the other resistor elements.

[0049] During the production and installation of infrared resistor arrays, the resistance values ​​of different resistor elements may vary due to manufacturing tolerances and installation errors. If the resistance value of a resistor element deviates significantly, this will cause its current performance at the same voltage to be different from that of other resistor elements. Since the resistance of a resistor element does not change linearly with temperature, resistor elements with different initial resistance values ​​will have different resistance values ​​at the same voltage as the operating time progresses. Therefore, the current passing through the resistor element will also change differently, resulting in a reduction in the synergy between the resistor elements. Resistor elements with different initial resistance values ​​will also cause uneven imaging during infrared imaging. This unevenness may appear as spots or stripes on the image, thus affecting the imaging quality.

[0050] Therefore, by analyzing the difference and similarity of current data between different resistors, the current difference index between each resistor and the other resistors is determined, and the current difference between each resistor and the other resistors is determined by combining the similarity of all current data between each resistor and the other resistors, so as to judge the possibility of resistor failure, specifically:

[0051] (1) Analyze the distance between all current data of each resistor element and all current data of other resistor elements, and record it as the current difference index between each resistor element and other resistor elements;

[0052] It should be noted that there are many methods for measuring the distance between data groups. In this embodiment, the Euclidean distance of all current data between each resistor element in the infrared resistor array and the other resistor elements is calculated to measure the difference in all current data between different resistor elements. The implementer may also use other methods for measuring the distance between data groups, such as Manhattan distance and DTW distance. Regarding the selection of the method for measuring the distance between data groups, this embodiment does not impose any special restrictions.

[0053] The calculation process of the Euclidean distance is a well-known technique, and the specific calculation process will not be described in detail.

[0054] (2) Further, analyzing the similarity between all current data of each resistor element in the infrared resistor array and all current data of the remaining resistor elements;

[0055] It should be noted that there are many methods for measuring the similarity between data groups. In this embodiment, the cosine similarity of all current data between each resistor element in the infrared resistor array and the other resistor elements is calculated to measure the similarity of all current data between different resistor elements. The implementer may also use other methods for measuring the similarity between data groups, such as the inverse of the Euclidean distance. Regarding the selection of the method for measuring the similarity between data groups, this embodiment does not impose any special restrictions.

[0056] The calculation process of cosine similarity is a well-known technology, and its specific calculation process will not be repeated here.

[0057] (3) Furthermore, the current difference between each resistor element and the other resistor elements is a ratio of the current difference index between each resistor element and the other resistor elements to the similarity.

[0058] Furthermore, based on the current difference between each resistor element and the other resistor elements, it can be understood that when there is no faulty resistor element between two resistor elements and the resistance values ​​between the resistor elements are similar, the smaller the difference in current data between different resistor elements, the smaller the current difference index between different resistor elements, and the greater the similarity of current data, that is, the smaller the current difference between the resistor elements; conversely, if there are faulty type resistor elements, the greater the difference in current data between different resistor elements, the greater the current difference index between different resistor elements, and the smaller the similarity, thereby making the current difference between the resistor elements greater.

[0059] Step S4: Based on the difference in current fluctuation between each resistor element and the remaining resistor elements, determine the fault weight coefficient between each resistor element and the remaining resistor elements, and determine the fault index between each resistor element and the remaining resistor elements in combination with the current difference; based on the average distribution of the fault index between each resistor element and all the remaining resistor elements, determine the drive fault recognition degree of each resistor element.

[0060] There is a significant difference in the current performance of the faulty resistor and the normal resistor under the same voltage conditions, and this difference provides an important basis for fault detection. Due to the instability of the resistance value change of the faulty resistor, the current change amplitude under the voltage is large, resulting in abnormal current data, making the current difference between the faulty resistor and the normal power supply large.

[0061] Therefore, taking the current difference as the fault weight coefficient can effectively quantify the fault degree of the resistor element. Based on the difference in current fluctuation between each resistor element and the other resistor elements, the fault weight coefficient between each resistor element and the other resistor elements is determined, which is specifically:

[0062] Fault weight coefficient between resistor element i and resistor element k The expression is: ; In the formula, Indicates the current fluctuation of resistor element i in the infrared resistor array; Indicates the current fluctuation of resistor element k in the infrared resistor array; is a preset constant greater than 0, which is used to prevent different resistors from having stable different resistance values ​​and to avoid the same current fluctuation, thereby making the calculated fault weight coefficient zero and causing inaccurate data calculation. The value of is set manually. The value of is 1, and the implementer can also set it according to the specific situation. This embodiment does not impose any special restrictions.

[0063] Further, based on the fault weight coefficient and current difference between each resistor element and all other resistor elements, the fault index between each resistor element and the other resistor elements is determined; based on the distribution of the fault index between each resistor element and all other resistor elements, the driving fault recognition degree of each resistor element is determined, so as to judge whether the resistor element has a fault. The specific determination process of the driving fault recognition degree of each resistor element is as follows:

[0064] Fault index between resistor element i and resistor element k The expression is: ; In the formula, Indicates the current difference between resistor element i and resistor element k in the infrared resistor array; It represents the fault weight coefficient between resistor element i and resistor element k in the infrared resistor array.

[0065] The driving fault recognition degree of each resistor element is the average value of the fault index between each resistor element and all other resistor elements.

[0066] According to the drive fault recognition degree of each resistor element, it can be understood that when the resistor element is a faulty resistor element, the difference between the current in the resistor element and the current in the normal resistor element is large. Therefore, the greater the current difference between the faulty resistor element and the normal resistor element, the greater the current fluctuation of the abnormal resistor element is than that of the normal resistor element, and the greater the fault intensity of the faulty resistor element, the greater the absolute value of the difference between the current fluctuations of the resistor elements, so that the fault weight coefficient value between the resistor elements is greater. As a result, the drive fault recognition degree of the resistor element current is greater.

[0067] Preferably, the schematic diagram of the drive fault recognition extraction process provided in this embodiment is as follows: Figure 3 shown.

[0068] Step S5: Based on the fault recognition degree of each resistor element, the infrared resistor array current drive fault is tested in combination with an abnormality detection algorithm.

[0069] Since there is a large gap between the driving fault recognition degree of the faulty resistor element and the driving fault recognition degree of the normal resistor element, the driving fault recognition degree of the faulty resistor element has an outlier attribute. Therefore, the driving fault recognition degree of all resistor elements in the infrared resistor array is used as the input of the anomaly detection algorithm, and the anomaly score of each resistor element is output.

[0070] If the abnormality score of the resistor element is greater than the preset threshold, the resistor element is faulty, whereas if the abnormality score of the resistor element is less than or equal to the preset threshold, the resistor element is normal.

[0071] It should be noted that there are many commonly used anomaly detection algorithms. In this embodiment, the LOF anomaly detection algorithm is used to obtain the anomaly score of each resistor element. Implementers may also use it. This embodiment does not impose any special restrictions on the selection of the anomaly detection algorithm.

[0072] Among them, the LOF anomaly detection algorithm is a well-known technology, and the specific process of obtaining the anomaly score is not repeated here.

[0073] Preferably, the resistor element abnormality score diagram provided in this embodiment is as follows: Figure 4 As shown in the figure, the horizontal axis represents the horizontal position of the resistor element, the vertical axis represents the vertical position of the resistor element, and the vertical axis represents the abnormal score of the driving fault recognition degree of the resistor element.

[0074] At this point, this embodiment analyzes the current flowing through the resistor elements in the infrared resistor array, determines the drive fault recognition degree of the resistor elements by comparing the difference in the current change characteristics between the normal resistor elements and the faulty resistor elements, and analyzes the difference in the current change characteristics between different resistor elements. The resistor elements in the infrared resistor array are tested in combination with the abnormality detection algorithm and the preset threshold, thereby improving the accuracy of the current drive fault test of the infrared resistor array.

[0075] Based on the same inventive concept as the above method, an embodiment of the present application also provides an infrared resistor array current drive fault test system, including a memory, a processor, and a computer program stored in the memory and running on the processor. When the processor executes the computer program, the steps of any one of the above-mentioned infrared resistor array current drive fault test methods are implemented.

[0076] It should be noted that the above sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above is a description of a specific embodiment of this specification. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0077] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0078] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for testing current drive fault of infrared resistor array, characterized in that: The method comprises the following steps: Obtaining the current data of each resistor element in the infrared resistor array at all acquisition moments within a preset time period; According to the difference of current data between all adjacent acquisition moments of each resistor element, the current trend value of each resistor element is determined, and the current fluctuation degree of each resistor element is determined in combination with the discrete degree of current data at all acquisition moments; Based on the difference of all current data between each resistor element and the other resistor elements, determine the current difference index between each resistor element and the other resistor elements, and combine the similarity of all current data between each resistor element and the other resistor elements to determine the current difference between each resistor element and the other resistor elements; Based on the difference in current fluctuation between each resistor element and the other resistor elements, determine the fault weight coefficient between each resistor element and the other resistor elements, and determine the fault index between each resistor element and the other resistor elements in combination with the current difference; based on the average distribution of the fault index between each resistor element and all the other resistor elements, determine the driving fault recognition degree of each resistor element; Based on the fault recognition degree, the infrared resistor array current drive fault is tested in combination with an abnormality detection algorithm; The expression of the current fluctuation of each resistor element is: ; In the formula, Indicates the current fluctuation of resistor element i; Represents the average difference of the current data of resistor element i at all acquisition moments; Indicates the current trend value of resistor element i; The expression of the fault weight coefficient between each resistor element and the other resistor elements is: ; In the formula, represents the fault weight coefficient between resistor element i and resistor element k; Indicates the current fluctuation of resistor element i in the infrared resistor array; Indicates the current fluctuation of resistor element k in the infrared resistor array; is a preset constant greater than 0; The expression of the fault index between each resistor element and the other resistor elements is: ; In the formula, Represents the fault index between resistor element i and resistor element k; Indicates the current difference between resistor element i and resistor element k in the infrared resistor array; It represents the fault weight coefficient between resistor element i and resistor element k in the infrared resistor array.

2. The infrared resistor array current drive fault testing method according to claim 1, characterized in that: The current trend value of each resistor element is the cumulative sum of the differences in current data between all adjacent acquisition moments of each resistor element.

3. The infrared resistor array current drive fault testing method according to claim 1, characterized in that: The current difference index between each resistor element and the remaining resistor elements is the distance between all current data of each resistor element and all current data of the remaining resistor elements.

4. The infrared resistor array current drive fault testing method according to claim 1, characterized in that: The current difference between each resistor element and the other resistor elements is a ratio of the current difference index between each resistor element and the other resistor elements to the similarity.

5. The infrared resistor array current drive fault testing method according to claim 1, characterized in that: The driving fault recognition degree of each resistor element is an average level of the fault index between each resistor element and all other resistor elements.

6. The infrared resistor array current drive fault testing method according to claim 1, characterized in that: The testing of the infrared resistor array current drive fault includes: The drive fault recognition degree of all resistor elements in the infrared resistor array is used as the input of the anomaly detection algorithm, and the anomaly score of each resistor element is output; If the abnormality score of the resistor element is greater than the preset threshold, the resistor element is faulty, otherwise, the resistor element is normal.

7. An infrared resistor array current drive fault test system, comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that: When the processor executes the computer program, the steps of the infrared resistor array current drive fault testing method as described in any one of claims 1-6 are implemented.

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