Spin converter

Abstract

The spin converter includes a first spin orbit torque wiring layer, a second spin orbit torque wiring layer, and a first spin wave propagation layer. The first spin wave propagation layer is located between the first spin orbit torque wiring layer and the second spin orbit torque wiring layer. A current or a voltage is applied between a first end and a second end of the first spin-orbit torque wiring layer in a first direction, and a current or a voltage between a third end and a fourth end of the second spin-orbit torque wiring layer can be output. The third end and the fourth end are located at different positions of the second spin orbit torque wiring layer in a second direction orthogonal to the first direction.

Description

Technical Field

[0001] The invention relates to a spin converter. Background Art

[0002] A transformer that changes the intensity of current and voltage is one of the main electronic components used in various electronic devices. For example, Patent Document 1 discloses a transformer using a coil.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-018317 Summary of the invention

[0006] Problems to be solved by the invention

[0007] There is a trade-off between the size of the coil and the strength of the inductance, and it is difficult to achieve a large inductance with a small coil. Therefore, there is a limit to the miniaturization of transformers using coils.

[0008] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a spin converter that can be miniaturized and can change the intensity of current or voltage.

[0009] Methods for solving problems

[0010] In order to solve the above problems, the present invention provides the following technical solutions.

[0011] The spin converter of the first aspect includes a first spin-orbit torque wiring layer, a second spin-orbit torque wiring layer and a first spin wave propagation layer. The first spin wave propagation layer is located between the first spin-orbit torque wiring layer and the second spin-orbit torque wiring layer. The structure is such that a current or voltage is applied between the first end and the second end of the first direction of the first spin-orbit torque wiring layer, and a current or voltage between the third end and the fourth end of the second spin-orbit torque wiring layer can be output. The third end and the fourth end are located at different positions of the second spin-orbit torque wiring layer in a second direction orthogonal to the first direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view of the spin converter according to the first embodiment.

[0013] Figure 2 It is a first cross-sectional view of the spin converter according to the first embodiment.

[0014] Figure 3 This is a second cross-sectional view of the spin converter according to the first embodiment.

[0015] Figure 4 It is a diagram for explaining the function of the spin converter according to the first embodiment.

[0016] Figure 5 This is a schematic diagram of an example of application of the spin converter according to the first embodiment.

[0017] Figure 6 It is a top view of a first modified example of the spin converter according to the first embodiment.

[0018] Figure 7 It is a top view of a second modified example of the spin converter according to the first embodiment.

[0019] Figure 8 It is a top view of a third modified example of the spin converter according to the first embodiment.

[0020] Fig. 9 It is a top view of the spin converter according to the second embodiment.

[0021] Fig.10 It is a first cross-sectional view of the spin converter according to the second embodiment.

[0022] Fig.11 It is a second cross-sectional view of the spin converter according to the second embodiment.

[0023] Fig.12 It is a diagram for explaining the function of the spin converter according to the second embodiment.

[0024] Fig.13 It is a top view of a first modified example of the spin converter according to the second embodiment.

[0025] Fig.14 It is a first cross-sectional view of a first modified example of the spin converter according to the second embodiment.

[0026] Description of Reference Numerals

[0027] 101st spin-orbit torque wiring layer

[0028] 202nd spin-orbit torque wiring layer

[0029] 301st spin wave propagation layer

[0030] 41 Terminal 1

[0031] 42 2nd terminal

[0032] 43 3rd terminal

[0033] 44 4th terminal

[0034] 45 5th terminal

[0035] 466th terminal

[0036] 50, 51, 52 power supply

[0037] 603rd spin-orbit torque wiring layer

[0038] 70 Second spin wave propagation layer

[0039] 80 Connection Wiring

[0040] 90 Insulation layer

[0041] 100, 101, 102, 103, 110, 111 spin converter

[0042] e1, e3, e5, end 1

[0043] e2, e4, e6 second end

[0044] I1, I2, I2', I3 current DETAILED DESCRIPTION

[0045] Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings as appropriate. The drawings used in the following description sometimes enlarge the features to facilitate understanding of the invention features, and the dimensional ratios of the components are sometimes inconsistent with the actual ones. The materials, dimensions, etc. illustrated in the following description are examples, and the present invention is not limited to these, and can be implemented by appropriately changing within the scope of achieving the effects of the present invention.

[0046] First, define the direction. Let one direction of the extension surface of each layer be the X direction, and let the direction orthogonal to the X direction be the Y direction. For example, let the first direction connecting the first end e1 and the second end e2 of the first spin-orbit torque wiring layer be the X direction. Let the second direction orthogonal to the first direction be, for example, the Y direction. In addition, let the thickness direction of each layer be the Z direction. The Z direction is orthogonal to the X direction and the Y direction.

[0047] "First embodiment"

[0048] Figure 1 This is a plan view of the spin converter 100 according to the first embodiment as viewed from the Z direction.

[0049] Figure 2 This is an XZ cross-sectional view passing through the center of the spin converter in the Y direction according to the first embodiment.

[0050] Figure 3 It is a YZ cross-sectional view passing through the center of the spin converter in the X direction according to the first embodiment.

[0051] The spin converter 100 is a signal converter that generates an output signal different from an input signal. For example, the spin converter 100 functions as a current-to-voltage converter that converts current into voltage, a voltage-to-current converter that converts voltage into current, or a current transformer or a transformer that changes the intensity of current or voltage.

[0052] The spin converter 100 includes, for example, a first spin-orbit torque wiring layer 10, a second spin-orbit torque wiring layer 20, and a first spin wave propagation layer 30. The spin converter 100 may further include a first terminal 41, a second terminal 42, a third terminal 43, a fourth terminal 44, and a power source 50. In addition, the periphery of the spin converter 100 may also be covered by an insulating layer 90.

[0053] The first terminal 41 is connected to the first end e1 of the first spin-orbit torque wiring layer 10. The second terminal 42 is connected to the second end e2 of the first spin-orbit torque wiring layer 10. The first terminal 41 and the second terminal 42 are write terminals for writing signals to the spin converter 100. The first terminal 41 and the second terminal 42 are conductors. For example, the first terminal 41 is connected to the power supply 50, and the second terminal 42 is grounded. The power supply 50 may also be connected to the second terminal 42. In the case where the power supply 50 and the ground are directly connected to the first spin-orbit torque wiring layer 10, the first terminal 41 and the second terminal 42 may not be present.

[0054] The third terminal 43 is connected to the first end e3 of the second spin-orbit torque wiring layer 20. The first end e3 is an example of the third end. The fourth terminal 44 is connected to the second end e4 of the second spin-orbit torque wiring layer 20. The second end e4 is an example of the fourth end. The third terminal 43 and the fourth terminal 44 are readout terminals for reading out signals from the spin converter 100. The third terminal 43 and the fourth terminal 44 are conductors. For example, the third terminal 43 and the fourth terminal 44 are connected to other elements. The third terminal 43 and the fourth terminal 44 may not be present.

[0055] The power source 50 is connected to the first spin-orbit torque wiring layer 10. The power source 50 is, for example, a voltage source or a current source. The power source 50 is configured to be able to apply a current or a voltage between the first end e1 and the second end e2. For example, when the power source 50 is a voltage source, the power source 50 generates a potential difference between the first end e1 and the second end e2 of the first spin-orbit torque wiring layer 10. For example, when the power source 50 is a current source, the power source 50 flows a current between the first end e1 and the second end e2 of the first spin-orbit torque wiring layer 10.

[0056] The insulating layer 90 is made of, for example, silicon oxide (SiO x ), silicon nitride (SiN x), silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al2O3), zirconium oxide (ZrO x )wait.

[0057] The first spin-orbit torque wiring layer 10 is a write wiring for writing a signal to the spin converter 100. A current or a voltage is applied between a first end e1 and a second end e2 of the first spin-orbit torque wiring layer 10 in the X direction.

[0058] The first spin-orbit torque wiring layer 10 includes any one of metal, alloy, intermetallic compound, metal boride, metal carbide, metal silicide, and metal phosphide having a function of generating a spin current by a spin Hall effect when a current flows.

[0059] The first spin-orbit torque wiring layer 10 contains, for example, a non-magnetic heavy metal as a main component. Heavy metal refers to a metal having a specific gravity greater than yttrium (Y). For example, a non-magnetic heavy metal is a non-magnetic metal with an atomic number greater than 39 having d electrons or f electrons in the outermost shell. The first spin-orbit torque wiring layer 10 is composed of, for example, Hf, Ta, W, and Ti. Non-magnetic heavy metals produce a stronger spin-orbit interaction than other metals. The spin Hall effect is generated by the spin-orbit interaction. When the spin is uneven in the first spin-orbit torque wiring layer 10 due to the spin Hall effect, a spin current J is easily generated. S .

[0060] The first spin-orbit torque wiring layer 10 may also contain a magnetic metal. The magnetic metal is a ferromagnetic metal or an antiferromagnetic metal. A trace amount of the magnetic metal contained in the non-magnetic body becomes a scattering factor of the spin. For example, a trace amount refers to less than 3% of the total molar ratio of the elements constituting the first spin-orbit torque wiring layer 10. When the spin is scattered by the magnetic metal, the spin-orbit interaction is enhanced, and the generation efficiency of the spin current relative to the electric current is improved.

[0061] The first spin-orbit torque wiring layer 10 may also include a topological insulator. A topological insulator is a material that is an insulator or a high resistor inside the material, but produces a spin-polarized metallic state on its surface. A topological insulator generates an internal magnetic field through spin-orbit interaction. Even if there is no external magnetic field, a topological insulator can produce a new topological phase through the effect of spin-orbit interaction. A topological insulator can efficiently generate a pure spin current through a strong spin-orbit interaction and the destruction of the inversion symmetry at the edge. In addition, since a topological insulator only flows current on the surface, a high current density can be achieved with a small amount of current.

[0062] Topological insulators such as Sn, SnTe, Bi 1.5 Sb 0.5 Te1.7 Se 1.3 、TlBiSe2、Bi2Te3、Bi 1-x Sb x 、(Bi 1- x Sb x )2Te3, (Nd,Pr)2Ir2O7, etc. Topological insulators can efficiently generate spin currents.

[0063] For example, the length L1 of the first spin-orbit torque wiring layer 10 in the X direction is greater than the length L2 in the Y direction. The spin current is generated by scattering of electrons flowing through the first spin-orbit torque wiring layer 10. The X direction is the flow direction of electrons in the first spin-orbit torque wiring layer 10. When the length L1 in the X direction is long, the number of times the electrons are scattered increases from the first end e1 to the second end e2. When the number of times the electrons are scattered increases, the efficiency of generating the spin current in the first spin-orbit torque wiring layer 10 is improved.

[0064] The second spin-orbit torque wiring layer 20 is a readout wiring for reading out a signal from the spin converter 100. The spin converter 100 outputs a current or a voltage between a first end e3 and a second end e4 of the second spin-orbit torque wiring layer 20.

[0065] The first end e3 and the second end e4 of the second spin-orbit torque wiring layer 20 are located at different positions in the Y direction from the first end e1 and the second end e2 of the first spin-orbit torque wiring layer 10. For example, a straight line connecting the first end e1 and the second end e2 of the first spin-orbit torque wiring layer 10 at the shortest distance intersects a straight line connecting the first end e3 and the second end e4 of the second spin-orbit torque wiring layer 20 at the shortest distance. The straight line connecting the first end e3 and the second end e4 of the second spin-orbit torque wiring layer 20 at the shortest distance may also be inclined relative to the Y direction.

[0066] At least a portion of the second spin-orbit torque wiring layer 20 faces the first spin-orbit torque wiring layer 10 via the first spin wave propagation layer 30 .

[0067] The second spin-orbit torque wiring layer 20 contains any one of metal, alloy, intermetallic compound, metal boride, metal carbide, metal silicide, and metal phosphide that has the function of generating a spin current by the spin Hall effect when a current flows. The second spin-orbit torque wiring layer 20 can use the same material as the first spin-orbit torque wiring layer 10. The second spin-orbit torque wiring layer 20 can be composed of the same material as the first spin-orbit torque wiring layer 10, or it can be composed of a different material. The second spin-orbit torque wiring layer 20 is preferably a topological insulator.

[0068] For example, the second spin-orbit torque wiring layer 20 has a length L3 in the X direction that is longer than a length L4 in the Y direction. If the length L3 in the X direction is longer than the length L4 in the Y direction, the resistance of the second spin-orbit torque wiring layer 20 in the Y direction becomes smaller. This is because the flow path of the current flowing in the Y direction is expanded. When the potential difference between the first end e3 and the second end e4 is constant, when the resistance in the Y direction of the second spin-orbit torque wiring layer 20 is low, the amount of current flowing between the first end e3 and the second end e4 becomes larger. That is, in the spin converter 100, when the length L3 in the X direction of the second spin-orbit torque wiring layer 20 is longer than the length L4 in the Y direction, the output current output from the spin converter 100 becomes larger.

[0069] The thickness t20 of the second spin-orbit torque wiring layer 20 in the Z direction is, for example, thicker than the thickness t10 of the first spin-orbit torque wiring layer 10 in the Z direction. The thinner the thickness t10 of the first spin-orbit torque wiring layer 10 is, the more efficiently the spin current can be generated. In addition, the thicker the thickness t20 of the second spin-orbit torque wiring layer 20 in the Z direction is, the more the resistance of the second spin-orbit torque wiring layer 20 in the Y direction can be reduced. This is because the flow path of the current flowing in the Y direction is expanded. When the spin converter 100 satisfies this structure, the output current output from the spin converter 100 becomes larger.

[0070] When viewed from the Z direction, the second spin-orbit torque wiring layer 20 overlaps with the first spin-orbit torque wiring layer 10. The overlapping surface where the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 overlap preferably satisfies (a / b) 2 ×r>1. Here, a is the length of the overlapping surface in the X direction, b is the length of the overlapping surface in the Y direction, r satisfies r=B / A, A is the current density of the first spin-orbit torque wiring layer 10, and B is the current density of the second spin-orbit torque wiring layer 20. If this relationship is satisfied, the current or voltage input to the spin converter 100 can be amplified and output.

[0071] The first spin wave propagation layer 30 is sandwiched between the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20. The first spin wave propagation layer 30 propagates the spins injected from the first spin-orbit torque wiring layer 10 as spin waves, and transfers them to the second spin-orbit torque wiring layer 20.

[0072] The first spin wave propagation layer 30 is, for example, a magnetic insulator. Since the first spin wave propagation layer 30 includes a magnetic body, spin waves can be propagated. In addition, since the first spin wave propagation layer 30 has insulating properties, the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 can be electrically separated. The first spin wave propagation layer 30 can also be any one of a ferromagnetic body, a ferrimagnetic body, and an antiferromagnetic body.

[0073] The thickness of the first spin wave propagation layer 30 is preferably less than the spin conduction length. The spin conduction length is a length corresponding to the spin diffusion length in the conductive material, and is a distance until the input spin is halved. If the thickness of the first spin wave propagation layer 30 is less than the spin conduction length, the decay rate of the spin in the first spin wave propagation layer 30 can be made 30% or less. The thickness of the first spin wave propagation layer 30 is, for example, 6 nm or more.

[0074] The spin converter 100 can be manufactured by repeating the stacking process of each layer and the processing process of each layer. The stacking process of each layer can be performed by, for example, sputtering, chemical vapor deposition (CVD), electron beam evaporation (EB), atomic laser deposition, etc. The processing process of each layer can be performed by, for example, photolithography, etc.

[0075] Next, the function of the spin converter 100 will be described. Figure 4 2 is a schematic diagram for explaining the function of the spin converter 100 .

[0076] The spin converter 100 is an element that converts a signal input between the first terminal 41 and the second terminal 42 and outputs the converted signal as an output signal from between the third terminal 43 and the fourth terminal 44 .

[0077] First, a potential difference is applied between the first terminal 41 and the second terminal 42 using the power supply 50. This becomes an input signal to the spin converter 100. When a potential difference is generated between the first terminal 41 and the second terminal 42, a current I1 flows in the X direction of the first spin-orbit torque wiring layer 10.

[0078] The current I1 flowing through the first spin-orbit torque wiring layer 10 generates a spin current by the spin Hall effect.

[0079] The spin Hall effect is a phenomenon in which a spin current is induced in a direction orthogonal to the direction of flow of the current (e.g., z direction) based on the spin-orbit interaction in the case of a flowing current. The common point between the spin Hall effect and the usual Hall effect is that the moving (moving) charge (electron) is bent in the direction of movement (movement). The usual Hall effect is that the direction of movement of a charged particle moving in a magnetic field is bent due to the Lorentz force. In contrast, even if there is no magnetic field, the spin Hall effect bends the direction of movement of the spin only by electron movement (only flowing current).

[0080] For example, when current flows in the X direction of the first spin-orbit torque wiring layer 10, spins polarized in the -y direction are bent in the -Z direction relative to the traveling direction, and spins S1 polarized in the +y direction are bent in the +Z direction relative to the traveling direction.

[0081] The spin S1 is injected into the first spin wave propagation layer 30 close to the first spin-orbit torque wiring layer 10. The magnetization in the first spin wave propagation layer 30 undergoes precession motion due to the spin S1 injected into the first spin wave propagation layer 30. The precession motion of the magnetization becomes a spin wave SW1, which propagates in the first spin wave propagation layer 30.

[0082] Spins propagating as spin waves SW1 are accumulated between the first spin wave propagation layer 30 and the second spin-orbit torque wiring layer 20. When the spin state in the second spin-orbit torque wiring layer 20 becomes non-uniform, a current I2 is generated in the Y direction of the second spin-orbit torque wiring layer 20. This is a phenomenon in which the current I1 in the first spin-orbit torque wiring layer 10 reverses the phenomenon of generating a spin current, and the spin generates a current I2.

[0083] The current I2 is generated between the third terminal 43 and the fourth terminal 44. That is, the spin converter 100 converts the current I1 into the current I2. In addition, when the resistance of the first spin-orbit torque wiring layer 10 is sufficiently high, the current I1 can be expressed as a potential difference. In this case, the spin converter 100 converts the voltage into the current I2. In addition, when the resistance of the second spin-orbit torque wiring layer 20 is sufficiently high, the current I2 can be expressed as a potential difference. In this case, the spin converter 100 converts the current I1 into a voltage.

[0084] The current I2 flowing between the first end e3 and the second end e4 of the second spin-orbit torque wiring layer 20 can be greater than the current I1 flowing between the first end e1 and the second end e2. For example, by expanding the flow path of the current in the Y direction of the second spin-orbit torque wiring layer 20 or narrowing the flow path of the current in the X direction of the first spin-orbit torque wiring layer 10, the current I2 can be made greater than the current I1.

[0085] In addition, the second potential difference between the first end e3 and the second end e4 of the second spin-orbit torque wiring layer 20 can be greater than the first potential difference between the first end e1 and the second end e2. For example, by narrowing the flow path of the current in the Y direction of the second spin-orbit torque wiring layer 20 or lengthening the length of the second spin-orbit torque wiring layer 20 in the Y direction, the second potential difference can be made greater than the first potential difference.

[0086] The spin converter 100 of the first embodiment converts an input signal into an output signal by a novel structure. In addition, since the spin converter 100 of the first embodiment utilizes energy conversion between current and spin, there is no limitation on the number of turns of the coil, and miniaturization is easy.

[0087] The spin converter 100 of this embodiment can be applied to, for example, a quantum computer. Figure 5Schematic diagram of a quantum computer to which the spin converter 100 of this embodiment is applied. The quantum computer 200 includes, for example, a quantum processor 201 , the spin converter 100 , a non-reciprocal circuit element 202 , filters 203 , 204 , and 205 , and an amplifier 206 .

[0088] The quantum processor 201 performs quantum computation. The non-reciprocal circuit element 202 transmits a readout signal of a quantum bit from the quantum processor 201. The non-reciprocal circuit element 202 is, for example, a circulator. The spin converter 100 converts an input signal into an output signal. The filters 203, 204, and 205, for example, limit the frequency of the propagated signal. The amplifier 206 amplifies the readout signal.

[0089] For example, a superconducting quantum computer operates at an extremely low temperature. Therefore, the spin converter 100 located near the quantum processor 201 is also arranged at a position exposed to an extremely low temperature environment. It is difficult to maintain a large volume of space in an extremely low temperature environment, and the spin converter 100 is required to be miniaturized. The spin converter 100 of this embodiment is easy to miniaturize and is suitable for applications in which electronic components are integrated in a quantum computer.

[0090] Although an example of the first embodiment has been described above, the present invention is not limited to these embodiments, and various modifications are possible.

[0091] Figure 6 FIG. 1 is a top view of a spin converter 101 according to a first variation of the first embodiment. Figure 6 As shown, the length L3' of the second spin-orbit torque wiring layer 20 in the X direction may be shorter than the length L4' in the Y direction. If the length L4' of the second spin-orbit torque wiring layer 20 in the Y direction is long, the resistance of the second spin-orbit torque wiring layer 20 between the third terminal 43 and the fourth terminal 44 becomes larger. If the length L3' of the second spin-orbit torque wiring layer 20 in the X direction is short, the flow path of the current becomes narrower, and the resistance of the second spin-orbit torque wiring layer 20 between the third terminal 43 and the fourth terminal 44 becomes larger. That is, in the spin converter 100, by making the length L4' of the second spin-orbit torque wiring layer 20 in the Y direction longer than the length L3' in the X direction, the output voltage output from the spin converter 100 can be increased.

[0092] Figure 7 FIG. 1 is a top view of the spin converter 102 according to the second variant. Figure 7 As shown, the length L1' of the first spin-orbit torque wiring layer 10 in the X direction may be shorter than the length L2' in the Y direction. The first spin-orbit torque wiring layer 10 often has high resistance. By shortening the length L1' of the first spin-orbit torque wiring layer 10 in the X direction, the element resistance of the spin converter 102 can be reduced.

[0093] Furthermore, the length L3 of the second spin-orbit torque wiring layer 20 in the X direction may be longer than the length L1′ of the first spin-orbit torque wiring layer 10. When increasing the output current from the spin converter 100, the length L3 of the second spin-orbit torque wiring layer 20 in the X direction is preferably longer.

[0094] Furthermore, the length L3 in the X direction and the length L4 in the Y direction of the second spin-orbit torque wiring layer 20 can be arbitrarily set regardless of the length L1 in the X direction and the length L2 in the Y direction of the first spin-orbit torque wiring layer 10. This is because the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 form different layers.

[0095] Figure 8 FIG. 1 is a top view of the spin converter 103 according to the third variant. Figure 8 As shown, the length L4" of the second spin-orbit torque wiring layer 20 in the Y direction may also be shorter than the length L2" of the first spin-orbit torque wiring layer 10 in the Y direction. When increasing the output current output from the spin converter 100, it is preferred that the length L4" of the second spin-orbit torque wiring layer 20 in the Y direction is shorter.

[0096] Although several modified examples have been described above, the spin switch of the first embodiment is not limited to these examples, and the shape can be freely designed according to the function required of the spin switch.

[0097] For example, in the case of increasing the output current output from the spin converter 100, the length L3 of the second spin-orbit torque wiring layer 20 in the X direction is preferably longer, and the length L4 of the second spin-orbit torque wiring layer 20 in the Y direction is preferably shorter. For example, the length L3 of the second spin-orbit torque wiring layer 20 in the X direction may be longer than the length L1 of the first spin-orbit torque wiring layer 10 in the X direction. In addition, the length L4 of the second spin-orbit torque wiring layer 20 in the Y direction may be shorter than the length L2 of the first spin-orbit torque wiring layer 10 in the Y direction.

[0098] In addition, for example, in the case of increasing the output voltage output from the spin converter 100, the length L3 of the second spin-orbit torque wiring layer 20 in the X direction is preferably short, and the length L4 of the second spin-orbit torque wiring layer 20 in the Y direction is preferably long. For example, the length L3 of the second spin-orbit torque wiring layer 20 in the X direction may be shorter than the length L1 of the first spin-orbit torque wiring layer 10 in the X direction. In addition, the length L4 of the second spin-orbit torque wiring layer 20 in the Y direction may be longer than the length L2 of the first spin-orbit torque wiring layer 10 in the Y direction.

[0099] "Second embodiment"

[0100] Fig. 9 This is a plan view of the spin converter 110 according to the second embodiment as viewed from the Z direction. Fig.10 It is an XZ cross-sectional view passing through the center of the spin converter 110 in the Y direction according to the second embodiment. Fig.11 It is a YZ cross-sectional view passing through the center of the spin converter 110 in the X direction according to the second embodiment.

[0101] The spin converter 110 includes, for example, a first spin-orbit torque wiring layer 10, a second spin-orbit torque wiring layer 20, a third spin-orbit torque wiring layer 60, a first spin wave propagation layer 30, and a second spin wave propagation layer 70. The spin converter 100 may further include a first terminal 41, a second terminal 42, a third terminal 43, a fourth terminal 44, a fifth terminal 45, a sixth terminal 46, a power source 50, and a power source 51. In the spin converter 110, the same reference numerals are given to the same structures as those of the spin converter 100, and the description thereof is omitted.

[0102] The fifth terminal 45 is connected to the first end e5 of the third spin-orbit torque wiring layer 60. The sixth terminal 46 is connected to the second end e6 of the third spin-orbit torque wiring layer 60. The fifth terminal 45 and the sixth terminal 46 are write terminals for writing signals to the spin converter 110. The fifth terminal 45 and the sixth terminal 46 are conductors. For example, the fifth terminal 45 is connected to the power supply 51, and the sixth terminal 46 is grounded. The power supply 51 may also be connected to the sixth terminal 46. In the case where the power supply 51 and the ground are directly connected to the third spin-orbit torque wiring layer 60, the fifth terminal 45 and the sixth terminal 46 may not be provided.

[0103] The power source 51 is connected to the third spin-orbit torque wiring layer 60. The power source 51 is, for example, a voltage source or a current source. The power source 51 is configured to be able to apply a current or a voltage between the first end e5 and the second end e6. For example, when the power source 51 is a voltage source, the power source 51 generates a potential difference between the first end e5 and the second end e6 of the third spin-orbit torque wiring layer 60. For example, when the power source 51 is a current source, the power source 51 flows a current between the first end e5 and the second end e6 of the third spin-orbit torque wiring layer 60.

[0104] At least a portion of the third spin-orbit torque wiring layer 60 is opposite to the second spin-orbit torque wiring layer 20 via the second spin wave propagation layer 70. The third spin-orbit torque wiring layer 60 is located at a position overlapping with the first spin-orbit torque wiring layer 10 in the Z direction. The first end e5 of the third spin-orbit torque wiring layer 60 is located, for example, at a position opposite to the first end e1 of the first spin-orbit torque wiring layer 10 in the Z direction.

[0105] The third spin-orbit torque wiring layer 60 is a write wiring for writing a signal to the spin converter 100 together with the first spin-orbit torque wiring layer 10. A current or a voltage is applied between the first end e5 and the second end e6 of the third spin-orbit torque wiring layer 60 in the X direction. The third spin-orbit torque wiring layer 60 can use the same material as the first spin-orbit torque wiring layer 10. The third spin-orbit torque wiring layer 60 can be composed of the same material as the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20, or can be composed of different materials. The third spin-orbit torque wiring layer 60 is preferably a topological insulator.

[0106] For example, the length L5 in the X direction of the third spin-orbit torque wiring layer 60 is longer than the length L6 in the Y direction. The spin flow generated in the third spin-orbit torque wiring layer 60 is generated by scattering of electrons flowing through the third spin-orbit torque wiring layer 60. If the length L5 in the X direction is long, the number of times the electrons are scattered increases from the first end e5 to the second end e6. When the number of times the electrons are scattered increases, the generation efficiency of the spin flow in the third spin-orbit torque wiring layer 60 is improved.

[0107] In addition, the third spin-orbit torque wiring layer 60 may have, for example, a length L5 in the X direction shorter than a length L6 in the Y direction. In this case, the device resistance of the spin converter 110 can be reduced.

[0108] In addition, the length L5 of the third spin-orbit torque wiring layer 60 in the X direction may be longer or shorter than the length L3 of the second spin-orbit torque wiring layer 20 in the X direction. Similarly, the length L6 of the third spin-orbit torque wiring layer 60 in the Y direction may be longer or shorter than the length L4 of the second spin-orbit torque wiring layer 20 in the Y direction.

[0109] The thickness t60 of the third spin-orbit torque wiring layer 60 in the Z direction is, for example, thinner than the thickness t20 of the second spin-orbit torque wiring layer 20 in the Z direction. The thinner the thickness t60 of the third spin-orbit torque wiring layer 60 is, the more efficiently the spin current can be generated. In addition, the thicker the thickness t20 of the second spin-orbit torque wiring layer 20 in the Z direction is, the more the resistance of the second spin-orbit torque wiring layer 20 in the Y direction can be reduced. When the spin converter 110 satisfies this structure, the output current output from the spin converter 110 becomes larger.

[0110] The second spin wave propagation layer 70 is sandwiched between the third spin-orbit torque wiring layer 60 and the second spin-orbit torque wiring layer 20 . The second spin wave propagation layer 70 propagates the spins injected from the third spin-orbit torque wiring layer 60 as spin waves, and transfers them to the second spin-orbit torque wiring layer 20 .

[0111] The second spin wave propagation layer 70 is, for example, a magnetic insulator. Since the second spin wave propagation layer 70 includes a magnetic body, spin waves can be propagated. In addition, since the second spin wave propagation layer 70 has insulating properties, the third spin-orbit torque wiring layer 60 and the second spin-orbit torque wiring layer 20 can be electrically separated. The second spin wave propagation layer 70 can also be any one of a ferromagnetic body, a ferrimagnetic body, or an antiferromagnetic body.

[0112] The second spin wave propagation layer 70 is preferably made of the same material as the first spin wave propagation layer 30. When the resonance frequencies of the second spin wave propagation layer 70 and the first spin wave propagation layer 30 match, the timing of injecting spins into the second spin-orbit torque wiring layer 20 coincides, and the conversion efficiency from spins to current in the second spin-orbit torque wiring layer 20 is improved.

[0113] The thickness of the second spin wave propagation layer 70 is preferably equal to or less than the spin conduction length. The thickness of the second spin wave propagation layer 70 is, for example, equal to or greater than 6 nm.

[0114] The spin converter 110 can be manufactured by repeating the stacking process of each layer and the processing process of each layer. The stacking process of each layer and the processing process of each layer can use the same method as the first embodiment.

[0115] Next, the function of the spin converter 110 will be described. Fig.12 2 is a schematic diagram for explaining the function of the spin converter 110 .

[0116] The spin converter 110 is an element that converts a signal input between the first terminal 41 and the second terminal 42 and between the fifth terminal 45 and the sixth terminal 46 , and outputs the converted signal from between the third terminal 43 and the fourth terminal 44 as an output signal.

[0117] First, a potential difference is applied between the first terminal 41 and the second terminal 42 using the power supply 50. Similarly, a potential difference is applied between the fifth terminal 45 and the sixth terminal 46 using the power supply 51. These are input signals to the spin converter 110.

[0118] Between the first terminal 41 and the second terminal 42, a current I1 flows along the X direction of the first spin-orbit torque wiring layer 10 according to the potential difference. Between the fifth terminal 45 and the sixth terminal 46, a current I3 flows along the X direction of the third spin-orbit torque wiring layer 60 according to the potential difference. Here, the current I1 and the current I3 are set to flow in opposite directions. For example, when the potential of the first terminal 41 is higher than the potential of the second terminal 42, the potential of the fifth terminal 45 is lower than the potential of the sixth terminal 46. Conversely, when the potential of the first terminal 41 is lower than the potential of the second terminal 42, the potential of the fifth terminal 45 can also be higher than the potential of the sixth terminal 46.

[0119] The current I1 flowing through the first spin-orbit torque wiring layer 10 generates a spin current by the spin Hall effect. The spin S1 is injected into the first spin wave propagation layer 30 close to the first spin-orbit torque wiring layer 10. The spin S1 injected into the first spin wave propagation layer 30 becomes a spin wave SW1, and propagates in the first spin wave propagation layer 30.

[0120] Similarly, the current I3 flowing through the third spin-orbit torque wiring layer 60 generates a spin current by the spin Hall effect. The spin S2 generated by the current I3 is injected into the second spin wave propagation layer 70 close to the third spin-orbit torque wiring layer 60. The spin S2 injected into the second spin wave propagation layer 70 becomes a spin wave SW2, and propagates in the second spin wave propagation layer 70. Here, the spin S1 generated by the current I1 and the spin S3 generated by the current I3 are spins in the same direction.

[0121] Spins propagating as spin wave SW1 are accumulated between the first spin wave propagation layer 30 and the second spin-orbit torque wiring layer 20. Spins propagating as spin wave SW2 are accumulated between the second spin wave propagation layer 70 and the second spin-orbit torque wiring layer 20. When spins are injected from the upper and lower surfaces of the second spin-orbit torque wiring layer 20, the spin state in the second spin-orbit torque wiring layer 20 becomes non-uniform. Moreover, due to the non-uniformity of the spin state, a current I2' is generated in the Y direction of the second spin-orbit torque wiring layer 20.

[0122] Current I2' is generated between the third terminal 43 and the fourth terminal 44. That is, the spin converter 110 converts the current I1 and the current I3 into the current I2'. In addition, when the resistance of the first spin-orbit torque wiring layer 10, the second spin-orbit torque wiring layer 20, and the third spin-orbit torque wiring layer 60 is high, the input and output signals of the spin converter 110 can be set to voltage.

[0123] The spin converter 110 of the second embodiment converts an input signal into an output signal by a new structure. In addition, since the spin converter 110 of the second embodiment utilizes energy conversion between current and spin, there is no limit on the number of turns of the coil, and it is easy to miniaturize. In addition, since the spin converter 110 of the second embodiment injects spins from the upper and lower surfaces of the second spin-orbit torque wiring layer 20, the spin current conversion efficiency from spin to current is high.

[0124] Although an example of the second embodiment has been described above, the present invention is not limited to these embodiments, and various modifications are possible. For example, the modification of the spin converter 100 of the first embodiment can be applied to the spin converter 110 of the second embodiment.

[0125] Fig.13It is a top view of a spin converter 111 according to a first modification of the second embodiment. Fig.14 1 is an XZ cross-sectional view of a spin converter 111 according to a first modification of the second embodiment. In the spin converter 111, the same components as those of the spin converter 110 are denoted by the same reference numerals, and description thereof will be omitted.

[0126] The spin converter 111 includes, for example, a first spin-orbit torque wiring layer 10, a second spin-orbit torque wiring layer 20, a third spin-orbit torque wiring layer 60, a first spin wave propagation layer 30, a second spin wave propagation layer 70, and a connection wiring 80. The spin converter 111 is provided with the connection wiring 80 instead of the fifth terminal 45 and the sixth terminal 46. In addition, the spin converter 111 is provided with a power supply 52 instead of the power supply 50 and the power supply 51.

[0127] The connection wiring 80 is a conductor. The connection wiring 80 connects, for example, the first end e1 of the first spin-orbit torque wiring layer 10 and the first end e5 of the third spin-orbit torque wiring layer 60. The power supply 52 is connected to the sixth terminal 46, and the second terminal 42 is grounded. The power supply 52 is configured to be able to apply a current or a voltage to the first spin-orbit torque wiring layer 10 and the third spin-orbit torque wiring layer 60.

[0128] When a potential difference is applied between the sixth terminal 46 and the second terminal 42 using the power supply 52, a current flows in the X direction of the third spin-orbit torque wiring layer 60 and the first spin-orbit torque wiring layer 10. The direction of the current flowing through the third spin-orbit torque wiring layer 60 is opposite to the direction of the current flowing through the first spin-orbit torque wiring layer 10. That is, the spin converter 111 of the first modification example exhibits the same function as the spin converter 110 in one power supply 52.

[0129] The spin converter 111 of the first modified example achieves the same effects as the spin converter 110. In addition, the spin converter 111 has fewer components and can be further miniaturized.

[0130] As described above, the spin converter of the above embodiment functions as a current-to-voltage converter that converts current into voltage, a voltage-to-current converter that converts voltage into current, or a current transformer or a transformer that changes the intensity of current or voltage. The conversion efficiency of a specific spin converter when a specific structure is specified is calculated below.

[0131] "First embodiment"

[0132] In the first embodiment, it is assumed that Figure 1A spin converter of the element structure shown. The length L1 of the first spin-orbit torque wiring layer 10 in the X direction: the length L2 in the Y direction = 100:1. The length L3 of the second spin-orbit torque wiring layer 20 in the X direction: the length L4 in the Y direction = 100:1. Assume that the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are made of the same material and the conversion efficiency of each spin and current is 10%. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 1 kΩ, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 0.1Ω. A voltage of 1V is applied between the first end e1 and the second end e2. A current of 1mA flows between the first end e1 and the second end e2. At this time, the electromotive force generated between the first end e3 and the second end e4 is 0.1V, and a current of 1A flows between the first end e3 and the second end e4. That is, the spin converter according to the first embodiment amplifies a current of 1 mA to 1 A, and the current amplification factor is 1000 times.

[0133] "Second embodiment"

[0134] In the second embodiment, it is assumed that the conversion efficiency of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 is 1%, which is different from the first embodiment. The other conditions of the second embodiment are the same as those of the first embodiment. In the second embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.01V, and the current of 1mA flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the second embodiment is 1 times.

[0135] "Third Embodiment"

[0136] In the third embodiment, it is assumed that the conversion efficiency of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 is 100%, which is different from the first embodiment. The other conditions of the third embodiment are the same as those of the first embodiment. In the third embodiment, the electromotive force generated between the first end e3 and the second end e4 is 1V, and the current of 10A flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the third embodiment is 10000 times.

[0137] "Fourth Embodiment"

[0138] In the fourth embodiment, the shape of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 is changed, which is different from the first embodiment. The length L1 of the first spin-orbit torque wiring layer 10 in the X direction: the length L2 in the Y direction = 1000:1. The length L3 of the second spin-orbit torque wiring layer 20 in the X direction: the length L4 in the Y direction = 1000:1. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 10kΩ, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 0.01Ω. The other conditions of the fourth embodiment are the same as those of the first embodiment. In the fourth embodiment, a current of 0.1mA flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.1V, and a current of 10A flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the fourth embodiment is 10000 times.

[0139] "Fifth Embodiment"

[0140] The fifth embodiment is different from the first embodiment in that the shapes of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are changed. The length L1 in the X direction of the first spin-orbit torque wiring layer 10: the length L2 in the Y direction = 20:1. The length L3 in the X direction of the second spin-orbit torque wiring layer 20: the length L4 in the Y direction = 20:1. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 1 kΩ, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 2.5Ω. The other conditions of the fifth embodiment are the same as those of the first embodiment. In the fifth embodiment, a current of 1 mA flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.1 V, and a current of 40 A flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the fifth embodiment is 40 times.

[0141] "Sixth embodiment"

[0142] In the sixth embodiment, the conversion efficiency of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 between spin and current is assumed to be 1%, which is different from the fifth embodiment. The other conditions of the sixth embodiment are the same as those of the fifth embodiment. In the sixth embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.01V, and a current of 4mA flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the sixth embodiment is 4 times.

[0143] "Seventh Embodiment"

[0144] The seventh embodiment is different from the sixth embodiment in that the shapes of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are changed. The length L1 in the X direction of the first spin-orbit torque wiring layer 10: the length L2 in the Y direction = 10:1. The length L3 in the X direction of the second spin-orbit torque wiring layer 20: the length L4 in the Y direction = 10:1. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 1 kΩ, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 10Ω. The other conditions of the seventh embodiment are the same as those of the sixth embodiment. In the seventh embodiment, a current of 1 mA flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.01 V, and a current of 1 A flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the seventh embodiment is 1 times.

[0145] "Eighth Embodiment"

[0146] The eighth embodiment is different from the first embodiment in that the shapes of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are changed. The length L1 in the X direction of the first spin-orbit torque wiring layer 10: the length L2 in the Y direction = 1:100. The length L3 in the X direction of the second spin-orbit torque wiring layer 20: the length L4 in the Y direction = 1:100. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 0.1Ω, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 1kΩ. The other conditions of the eighth embodiment are the same as those of the first embodiment. In the eighth embodiment, a current of 10A flows between the first end e1 and the second end e2. The electromotive force generated between the first end e3 and the second end e4 is 0.1V, and a current of 0.1mA flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the eighth embodiment is 1 / 10000 times.

[0147] "Ninth Embodiment"

[0148] The length of the first spin-orbit torque wiring layer 10 in the X direction is set to 100 μm, the length in the Y direction is set to 1 μm, the thickness in the Z direction is set to 1 nm, the material is set to Ta, and the resistivity is set to 12 mΩcm. The resistance in the X direction of the first spin-orbit torque wiring layer 10 is 2400Ω. When a voltage of 1V is applied in the X direction of the first spin-orbit torque wiring layer 10, a current of 0.417 mA flows in the X direction of the first spin-orbit torque wiring layer 10. The length of the second spin-orbit torque wiring layer 20 in the X direction is set to 1 μm, the length in the Y direction is set to 100 μm, and the thickness in the Z direction is set to 1 nm. It is assumed that the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are composed of the same material and the conversion efficiency of each spin and current is 10%. The resistance in the Y direction of the second spin-orbit torque wiring layer 20 is 0.24Ω. A potential difference of 0.1 V is generated in the Y direction of the second spin-orbit torque wiring layer 20, and a current of 417 mA flows in the Y direction of the second spin-orbit torque wiring layer 20. The current amplification factor of the spin converter of the ninth embodiment is 1000 times.

[0149] "10th embodiment"

[0150] In the tenth embodiment, the conversion efficiency of the spin and current of each of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 is assumed to be 1%, which is different from the ninth embodiment. The other conditions of the tenth embodiment are the same as those of the ninth embodiment. In the ninth embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.01V, and the current of 41.7mA flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the tenth embodiment is 100 times.

[0151] "11th embodiment"

[0152] The length of the first spin-orbit torque wiring layer 10 in the X direction is set to 100 μm, the length in the Y direction is set to 1 μm, the thickness in the Z direction is set to 5 nm, the material is set to Ta, and the resistivity is set to 12 mΩcm. The resistance in the X direction of the first spin-orbit torque wiring layer 10 is 2400Ω. When a voltage of 1V is applied in the X direction of the first spin-orbit torque wiring layer 10, a current of 0.417 mA flows in the X direction of the first spin-orbit torque wiring layer 10. The length of the second spin-orbit torque wiring layer 20 in the X direction is set to 1 μm, the length in the Y direction is set to 100 μm, and the thickness in the Z direction is set to 5 nm. It is assumed that the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are composed of the same material and the conversion efficiency of each spin and current is 10%. The resistance in the Y direction of the second spin-orbit torque wiring layer 20 is 0.24Ω. A potential difference of 0.001 V is generated in the Y direction of the second spin-orbit torque wiring layer 20, and a current of 4.17 mA flows in the Y direction of the second spin-orbit torque wiring layer 20. The current amplification factor of the spin converter of the eleventh embodiment is 10 times.

[0153] "Example 12"

[0154] In the twelfth embodiment, the conversion efficiency of the spin and current of each of the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 is assumed to be 1%, which is different from the eleventh embodiment. The other conditions of the twelfth embodiment are the same as those of the eleventh embodiment. In the twelfth embodiment, the electromotive force generated between the first end e3 and the second end e4 is 0.001V, and the current of 0.417mA flows between the first end e3 and the second end e4. That is, the current amplification factor of the spin converter of the twelfth embodiment is 1 times.

[0155] "13th embodiment"

[0156] The 13th embodiment differs from the 12th embodiment in that the length of the first spin-orbit torque wiring layer 10 in the Y direction is set to 0.1 μm, and the length of the second spin-orbit torque wiring layer 20 in the X direction is set to 0.1 μm. The other conditions in the 13th embodiment are the same as those in the 12th embodiment. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 24000Ω. When a voltage of 0.1V is applied in the X direction of the first spin-orbit torque wiring layer 10, a current of 0.0417 mA flows in the X direction of the first spin-orbit torque wiring layer 10. The resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 0.24Ω. A potential difference of 0.001V is generated in the Y direction of the second spin-orbit torque wiring layer 20, and a current of 0.417 mA flows in the Y direction of the second spin-orbit torque wiring layer 20. The current amplification factor of the spin converter of the 13th embodiment is 10 times.

[0157] "Example 14"

[0158] In the 14th embodiment, it is assumed that Figure 1 A spin converter of the element structure shown. The length L1 of the first spin-orbit torque wiring layer 10 in the X direction: the length L2 in the Y direction = 100:1. The length L3 of the second spin-orbit torque wiring layer 20 in the X direction: the length L4 in the Y direction = 100:1. Assume that the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are made of the same material and the conversion efficiency of each spin and current is 10%. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 1 kΩ, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 0.1Ω. A voltage of 1V is applied between the first end e1 and the second end e2. A current of 1mA flows between the first end e1 and the second end e2. At this time, the electromotive force generated between the first end e3 and the second end e4 is 0.1V, and a potential difference of 10μV is generated between the first end e3 and the second end e4. That is, the spin converter according to the fourteenth embodiment converts a potential difference of 1 V into 10 μV, and the voltage amplification factor is 1 / 10000 times.

[0159] "Example 15"

[0160] In the fifteenth embodiment, it is assumed that Figure 1 A spin converter of the element structure shown. The length L1 of the first spin-orbit torque wiring layer 10 in the X direction: the length L2 in the Y direction = 1:100. The length L3 of the second spin-orbit torque wiring layer 20 in the X direction: the length L4 in the Y direction = 1:100. Assume that the first spin-orbit torque wiring layer 10 and the second spin-orbit torque wiring layer 20 are made of the same material and the conversion efficiency of each spin and current is 10%. The resistance of the first spin-orbit torque wiring layer 10 in the X direction is 1 kΩ, and the resistance of the second spin-orbit torque wiring layer 20 in the Y direction is 1 kΩ. A voltage of 1 V is applied between the first end e1 and the second end e2. A current of 10 A flows between the first end e1 and the second end e2. At this time, the electromotive force generated between the first end e3 and the second end e4 is 0.1 V, and a potential difference of 1 kV is generated between the first end e3 and the second end e4. That is, the spin converter according to the fifteenth embodiment converts a potential difference of 1 V into 1 kV, and the voltage amplification factor is 1000 times.

Claims

1. A spin converter, characterized in that: The invention comprises a first spin-orbit torque wiring layer, a second spin-orbit torque wiring layer and a first spin wave propagation layer, The first spin wave propagation layer is located between the first spin-orbit torque wiring layer and the second spin-orbit torque wiring layer. The device is configured to be capable of applying a current or voltage between a first end and a second end of the first spin-orbit torque wiring layer in a first direction, and capable of outputting a current or voltage between a third end and a fourth end of the second spin-orbit torque wiring layer, The third end and the fourth end are located at different positions of the second spin-orbit torque wiring layer in a second direction orthogonal to the first direction.

2. The spin converter according to claim 1, wherein: The first spin wave propagation layer is a magnetic insulator.

3. The spin converter according to claim 1, wherein: The length of the first spin-orbit torque wiring layer in the first direction is longer than the length in the second direction. A length of the second spin-orbit torque wiring layer in the second direction is longer than a length of the first spin-orbit torque wiring layer in the second direction.

4. The spin converter according to claim 1, wherein: The length of the first spin-orbit torque wiring layer in the first direction is longer than the length in the second direction. The length of the second spin-orbit torque wiring layer in the first direction is longer than the length in the second direction.

5. The spin converter according to claim 1, wherein: A second current flowing between the third end and the fourth end is larger than a first current flowing between the first end and the second end.

6. The spin converter according to claim 1, wherein: A second potential difference between the third end and the fourth end is greater than a first potential difference between the first end and the second end.

7. The spin converter according to claim 1, wherein: Also includes a power supply, The power supply applies a current or a voltage between the first end and the second end.

8. The spin converter according to claim 1, wherein: Also includes a first terminal, a second terminal, a third terminal and a fourth terminal, The first terminal is connected to the first end, The second terminal is connected to the second end, The third terminal is connected to the third end, The fourth terminal is connected to the fourth end.

9. The spin converter according to claim 1, wherein: When viewed from the stacking direction, the overlapping surface of the first spin-orbit torque wiring layer and the second spin-orbit torque wiring layer satisfies (a / b) 2 ×r>1, a is the length of the overlapping surface in the first direction, b is the length of the overlapping surface in the second direction, r satisfies r=B / A, A is the current density of the first spin-orbit torque wiring layer, B is the current density of the second spin-orbit torque wiring layer.

10. The spin converter according to claim 1, wherein: It also includes a third spin-orbit torque wiring layer and a second spin wave propagation layer, The second spin wave propagation layer is located between the second spin-orbit torque wiring layer and the third spin-orbit torque wiring layer. The third spin-orbit torque wiring layer is configured to be capable of applying a current or a voltage between the fifth end and the sixth end in the first direction. The fifth end is located at a position opposite to the first end in the stacking direction, The first current flowing between the first end and the second end and the third current flowing between the fifth end and the sixth end flow in opposite directions.

11. The spin converter according to claim 1, wherein: It also includes a third spin-orbit torque wiring layer, a second spin wave propagation layer and a connecting wiring, The second spin wave propagation layer is located between the second spin-orbit torque wiring layer and the third spin-orbit torque wiring layer. The third spin-orbit torque wiring layer is configured to be capable of applying a current or a voltage between the fifth end and the sixth end in the first direction. The fifth end is located at a position opposite to the first end in the stacking direction, The first end and the fifth end are directly connected via a connecting wire.

12. The spin converter according to claim 1, wherein: It also includes a third spin-orbit torque wiring layer and a second spin wave propagation layer, The second spin wave propagation layer is located between the second spin-orbit torque wiring layer and the third spin-orbit torque wiring layer. The first spin wave propagation layer and the second spin wave propagation layer are made of the same material.

13. The spin converter according to claim 1, wherein: The thickness of the first spin wave propagation layer is greater than 6 nm.

14. The spin converter according to claim 1, wherein: The thickness of the first spin wave propagation layer is less than or equal to the spin conduction length.

15. The spin converter according to claim 1, wherein: The first spin wave propagation layer is any one of a ferromagnetic material, a ferrimagnetic material, and an antiferromagnetic material.

16. The spin converter according to claim 1, wherein: Either the first spin-orbit torque wiring layer or the second spin-orbit torque wiring layer is a topological insulator.

Images