Semiconductor process chamber and semiconductor process apparatus

Abstract

This application discloses a semiconductor process chamber and semiconductor process equipment, relating to the semiconductor field. A semiconductor process chamber includes: a cavity, a carrier component, and a connecting component; the carrier component includes multiple first carrier members and multiple second carrier members, wherein one first carrier member and an adjacent second carrier member are spaced apart to form a process space; the first carrier member has multiple feed terminals, and the second carrier member has multiple ground terminals; the connecting component includes a connecting strip, multiple elastic components, multiple radio frequency (RF) connecting blocks, and multiple ground connecting blocks; the connecting strip includes multiple parallel branch terminals; the multiple RF connecting blocks are respectively connected to the multiple branch terminals through a portion of the elastic components; the multiple feed terminals of each first carrier member are respectively connected to the multiple RF connecting blocks, and the multiple ground terminals of each second carrier member are respectively connected to the multiple ground connecting blocks. This application can solve the problem of film uniformity being affected by the standing wave effect in current PECVD equipment.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a semiconductor process chamber and semiconductor process equipment. Background Technology

[0002] In heterojunction (HJT) solar cells, the amorphous silicon film plays a crucial role in improving the cell's on-state voltage. Amorphous silicon contains a large number of hydrogen ions, which can saturate defects in the silicon substrate, thus acting as hydrogen passivation. Currently, the mainstream technologies for depositing amorphous silicon in HJT solar cells are plate-type plasma-enhanced chemical vapor deposition (PECVD) equipment and tubular PECVD equipment.

[0003] With the development of solar cell technology, the low-frequency (kHz-level, e.g., 20-400kHz) power supplies used in traditional PECVD equipment can no longer meet the process requirements of heterojunction (HJT) cells. This is because the plasma generated by low-frequency power supplies has high ion energy, which severely bombards the wafer, resulting in poor density of the deposited film. Therefore, PECVD equipment has introduced radio frequency (MHz-level, e.g., 2-30MHz) and very high frequency (MHz-level, e.g., 30-300MHz) power supplies. The plasmas generated have advantages such as high density and low ion energy bombardment, resulting in denser deposited films with less damage, thus meeting the process requirements of heterojunction (HJT) cells.

[0004] However, when PECVD equipment uses radio frequency or very high frequency power supplies, the standing wave effect is the main factor affecting the uniformity of film formation. The standing wave effect refers to the fact that when the electrical dimensions of the radio frequency or very high frequency power supply are comparable to the mechanical dimensions, the mechanical structure will be regarded as a transmission line, and the electric field distribution on the mechanical structure will form a standing wave, affecting the uniformity of film formation. Summary of the Invention

[0005] The purpose of this application is to provide a semiconductor process chamber and semiconductor process equipment that can solve the problem of film uniformity being affected by the standing wave effect in current PECVD equipment.

[0006] To solve the above-mentioned technical problems, this application is implemented as follows:

[0007] This application provides a semiconductor process chamber, including: a chamber, a carrier component disposed within the chamber, and a connecting component extending into the chamber and connected to the carrier component;

[0008] The carrier assembly includes multiple first carriers and multiple second carriers, wherein one of the first carriers and the adjacent second carriers are spaced apart to form a process space, each of the first carriers is provided with multiple feed terminals, and each of the second carriers is provided with multiple ground terminals;

[0009] The connecting assembly includes a connecting strip, multiple elastic components, multiple radio frequency connecting blocks, and multiple grounding connecting blocks. The connecting strip includes multiple parallel branch ends.

[0010] The plurality of radio frequency connection blocks are respectively connected to the plurality of branch ends through a portion of the elastic component, and the plurality of ground connection blocks are respectively grounded through another portion of the elastic component;

[0011] The plurality of feed terminals of each first carrier are respectively connected to the plurality of radio frequency connection blocks, and the plurality of ground terminals of each second carrier are respectively connected to the plurality of ground connection blocks.

[0012] This application also provides a semiconductor process apparatus, including a radio frequency power supply and the aforementioned semiconductor process chamber;

[0013] The radio frequency power supply is connected to the connecting strip.

[0014] In this embodiment, multi-point feeding allows the electric field distribution on the carrier component to form multiple sinusoidal curves. Compared to single-point feeding forming a single sinusoidal curve, this reduces the difference between the maximum and minimum electric field values ​​on the carrier component, resulting in a more uniform electric field distribution. Consequently, the plasma density on the wafer surface becomes more uniform, thus improving the uniformity of film formation. The elastic component enhances the electrical conductivity of the RF feed path and allows for adaptive adjustment of the positional relationships between structures, thereby improving the fault tolerance of the connection. The RF connection block and ground connection block enable support and connection of multiple first and second carrier components, which improves both the uniformity of RF transmission and the stability of the carrier component. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of a PECVD device in related technologies;

[0016] Figure 2 A schematic diagram of the electric field distribution of a graphite boat in a PECVD device with a single feed type in related technologies at 60MHz / 13.5MHz;

[0017] Figure 3 This is a schematic diagram of the structure of the semiconductor process chamber disclosed in the embodiments of this application;

[0018] Figure 4This is a schematic diagram of the structure of the carrier component, radio frequency connection block, grounding connection block, elastic component, support base and connecting strip disclosed in the embodiments of this application;

[0019] Figure 5 This is a schematic diagram of the structure of the process boat disclosed in the embodiments of this application;

[0020] Figure 6 This is a schematic diagram of the structure of the process boat and wafer disclosed in the embodiments of this application;

[0021] Figure 7 This is a schematic diagram of the structure of the first carrier disclosed in the embodiments of this application;

[0022] Figure 8 This is a schematic diagram of the structure of the second carrier disclosed in the embodiments of this application;

[0023] Figure 9 This is a schematic diagram of the structure of the radio frequency connection block disclosed in the embodiments of this application;

[0024] Figure 10 This is a schematic diagram of the structure of the grounding connection block disclosed in the embodiments of this application;

[0025] Figure 11 This is a schematic diagram of the connecting strip and elastic component disclosed in the embodiments of this application;

[0026] Figure 12 This is a schematic diagram of the structure of the connecting strip disclosed in an embodiment of this application;

[0027] Figure 13 This is a schematic diagram of the structure of the elastic component disclosed in the embodiments of this application;

[0028] Figure 14 This is a schematic diagram of the structure of the support member disclosed in the embodiments of this application;

[0029] Figure 15 This is a schematic diagram of the structure of the carrier component and the connecting component disclosed in the embodiments of this application;

[0030] Figure 16 This is a schematic diagram of the electric field distribution of the process boat of the multi-point feed semiconductor process chamber disclosed in the embodiments of this application at 60MHz.

[0031] Explanation of reference numerals in the attached figures:

[0032] 01-Graphite boat; 02-Feed electrode;

[0033] 100 - Cavity; 110 - Quartz tube; 120 - First valve plate; 130 - Second valve plate;

[0034] 200 - Bearing component; 210 - First bearing element; 211 - Feed input terminal; 220 - Second bearing element; 221 - Grounding terminal; 230 - First conductive block; 240 - Second conductive block; 250 - First boat angle; 260 - Second boat angle;

[0035] 300 - Connecting component; 310 - Connecting strip; 311 - Branch end; 320 - Elastic component; 321 - First connecting plate; 322 - Second connecting plate; 323 - Flexible connector; 324 - First guide structure; 325 - Second guide structure; 330 - RF connecting block; 331 - Block; 3311 - Slot; 332 - Connector body; 340 - Grounding connecting block;

[0036] 400 - Support member; 410 - First groove; 420 - Second groove. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0039] The embodiments of this application will be described in detail below with reference to the accompanying drawings and specific examples and application scenarios.

[0040] Some PECVD equipment in related technologies, such as Figure 1 and Figure 2As shown, a single-point feed electrode is used, and the size of the graphite boat is 1.5m, while the electrical size of the 13.56MHz RF power supply is 2.2m. This makes the size of the graphite boat smaller than the frequency, and in this case, the standing wave effect on the graphite boat is relatively small. However, when a very high frequency (e.g., 60MHz) power supply is used, the electrical size of the VHF power supply at this frequency is 0.5m, which is much smaller than the size of the graphite boat. In this case, the standing wave effect on the graphite boat is larger under the VHF power supply, affecting the electric field uniformity and causing uneven thin film on the wafer surface.

[0041] refer to Figures 3 to 16 This application discloses a semiconductor process chamber, which includes a cavity 100, a carrier component 200, and a connecting component 300. The carrier component 200 is disposed within the cavity 100 and is used to carry a wafer. The connecting component 300 extends into the cavity 100 and is connected to the carrier component 200 to deliver radio frequency power to the carrier component 200, thereby enabling process processing of the wafer carried on the carrier component 200.

[0042] The cavity 100 is a basic component that provides a space to accommodate the supporting components 200, wafers, etc., to facilitate the provision of process conditions for wafer processing. For example, such as... Figure 3 As shown, the cavity 100 may include a quartz tube 110, a first valve plate 120 and a second valve plate 130. The first valve plate 120 and the second valve plate 130 are respectively disposed at both ends of the quartz tube 110 to provide a sealing function and a sealed space for process processing. At least one of the first valve plate 120 and the second valve plate 130 can be opened and closed to facilitate the movement of the carrier component 200 into or out of the quartz tube 110.

[0043] refer to Figure 5 The carrier assembly 200 includes a plurality of first carrier elements 210 and a plurality of second carrier elements 220, wherein the first carrier elements 210 are used to receive radio frequency power fed from the connection assembly 300, and the second carrier elements 220 are used for grounding. In some embodiments, one of the first carrier elements 210 is spaced apart from an adjacent second carrier element 220, forming a process space between them to facilitate wafer processing within the process space. Exemplarily, the carrier assembly 200 may be a graphite boat; correspondingly, the first carrier element 210 may be a first boat sheet for receiving radio frequency power to feed radio frequency energy, and the second carrier element 220 may be a second boat sheet for grounding.

[0044] It should be noted that the wafer is fixed between adjacent first carrier 210 and second carrier 220. Thus, when the first carrier 210 is energized, an electric field can be formed between the first carrier 210 and the second carrier 220, so that the plasma can bombard the wafer, thereby realizing the wafer processing.

[0045] For example, the first carrier 210 and the second carrier 220 are respectively provided with multiple sets of locking points, and the area enclosed by each set of locking points can place the wafer and fix the wafer.

[0046] refer to Figure 7 In some embodiments, each first carrier 210 is provided with multiple feed terminals 211, through which radio frequency power can be fed into the first carrier 210 respectively; correspondingly, such as Figure 8 As shown, each second carrier 220 is provided with multiple grounding terminals 221, which are used for grounding respectively. This arrangement facilitates a more uniform electric field in multiple areas of the first carrier 210, which is beneficial for promoting the uniform distribution of the electric field.

[0047] For example, the first carrier 210 can be a long strip structure, and multiple feed ends 211 can be distributed along the length direction of the first carrier 210 at one end of the width direction of the first carrier 210. For example, in actual working conditions, multiple feed ends 211 can be distributed at the bottom of the first carrier 210 and arranged at intervals along the length direction, so that the radio frequency power can be fed into different regions of the first carrier 210 along its own length direction through multiple feed ends 211, which is beneficial to promoting the uniformity of the electric field distribution in the length direction of the first carrier 210.

[0048] In addition, the second carrier 220 can also adopt a long strip structure, and multiple grounding terminals 221 can be distributed along the length direction of the second carrier 220 at one end of the width direction of the second carrier 220. For example, in actual working conditions, multiple grounding terminals 221 can be distributed at the bottom of the second carrier 220 and arranged at intervals along the length direction of the second carrier 220.

[0049] In this embodiment of the application, when assembling the carrier component 200, the first carrier 210 and the second carrier 220 can be swapped at 180°. At this time, the multiple feed terminals 211 and the multiple ground terminals 221 can be arranged in opposite directions so as to separate the feed terminals 211 and the ground terminals 221 and prevent short circuits.

[0050] To distribute radio frequency power to the multiple feed points 211 of each first carrier 210, the connection assembly 300 may include a connection strip 310, such as Figure 11 and Figure 12As shown, the connecting strip 310 may include multiple parallel branch ends 311, which can be used to deliver radio frequency power to the multiple feed ends 211 of each of the multiple first carriers 210.

[0051] Furthermore, the connection component 300 may also include a plurality of RF connection blocks 330, with the plurality of feed terminals 211 of each first carrier 210 respectively connected to the plurality of RF connection blocks 330. In some embodiments, the plurality of RF connection blocks 330 are spaced apart along the length direction of the first carrier 210 and are respectively connected to the plurality of feed terminals 211 of each first carrier 210. In this way, RF power can be simultaneously fed to the feed terminals 211 in the same area of ​​the plurality of first carriers 210 through each RF connection block 330, and the simultaneous feeding of RF power by the plurality of RF connection blocks 330 can promote the uniformity of RF power fed to each first carrier 210. In addition, the RF connection blocks 330 also provide support for the first carrier 210 to improve the stability of the first carrier 210.

[0052] For example, the RF connection block 330 can be a long strip block that extends along the thickness direction of the first carrier 210 and is connected to the feed end 211 at the bottom of each of the multiple first carriers 210. Of course, it can also be connected to the feed end 211 at other locations, which is not specifically limited here.

[0053] To enable the multiple second carriers 220 to be grounded synchronously, the connection assembly 300 may further include multiple grounding connection blocks 340, with multiple grounding terminals 221 of each second carrier 220 respectively connected to the multiple grounding connection blocks 340. In some embodiments, the multiple grounding connection blocks 340 are spaced apart along the length direction of the second carriers 220 (i.e., the same as the length direction of the first carrier 210) and are respectively connected to the multiple grounding terminals 221 of each second carrier 220. In this way, the radio frequency power output from the grounding terminals 221 in the same area of ​​the multiple second carriers 220 can be output through each grounding connection block 340, and the simultaneous output of multiple grounding connection blocks 340 can promote the uniformity of radio frequency power. In addition, the grounding connection blocks 340 also provide support for the second carriers 220 to improve the stability of the second carriers 220.

[0054] For example, the grounding connection block 340 can be a long strip block that extends along the thickness direction of the second carrier 220 and is connected to the grounding end 221 at the bottom of each of the multiple second carriers 220. Of course, it can also be connected to the grounding end 221 at other locations, which is not specifically limited here.

[0055] Considering that when loading or unloading wafers, the carrier component 200 needs to be moved out of or into the cavity 100, and that the carrier component 200 may separate or connect with the connecting component 300 during the process of moving the carrier component 200, this may easily lead to poor contact between the carrier component 200 and the connecting component 300, or poor grounding of the carrier component 200, which may affect the normal process.

[0056] Based on the above, the connection component 300 in this application embodiment may further include multiple elastic members 320, such as... Figure 3 and Figure 4 As shown, these elastic components 320 are respectively connected between the radio frequency connection block 330 and the connection strip 310, and between the ground connection block 340 and the ground electrode to ensure good conductivity.

[0057] In some embodiments, multiple radio frequency connection blocks 330 are connected to multiple branch ends 311 respectively through a portion of elastic members 320. In this way, by setting a portion of elastic members 320, elastic connection can be achieved between each of the multiple radio frequency connection blocks 330 and the corresponding branch end 311. This allows the positional relationship between the multiple radio frequency connection blocks 330 and the multiple branch ends 311 to be adaptively adjusted during the movement of the carrier component 200, thereby improving the fault tolerance rate of the connection, ensuring the integrity of the connection, and achieving good conductivity.

[0058] Similarly, multiple grounding connection blocks 340 are used to ground themselves through another part of the elastic component 320. In this way, by setting the other part of the elastic component 320, the elastic connection between each of the multiple grounding connection blocks 340 and the ground electrode can be realized. This allows the positional relationship between the multiple grounding connection blocks 340 and the ground electrode to be adjusted adaptively during the movement of the bearing component 200, thereby improving the fault tolerance rate of the connection, ensuring the integrity of the connection, and achieving good conductivity.

[0059] Based on the above configuration, multi-point feeding allows the electric field distribution on the carrier component 200 to form multiple sinusoidal curves. Compared to a single-point feeding resulting in a single sinusoidal curve, this reduces the difference between the maximum and minimum electric field values ​​on the carrier component 200, leading to a more uniform electric field distribution. This, in turn, makes the plasma density more uniform on the wafer surface, thus improving the uniformity of film formation. The elastic component 320 enhances the electrical conductivity of the RF feed path and allows for adaptive adjustment of the positional relationships between structures, improving the fault tolerance of the connection. The RF connection block 330 and the ground connection block 340 support and connect multiple first carriers 210 and multiple second carriers 220, which improves both the uniformity of RF transmission and the stability of the carrier component 200.

[0060] refer to Figure 9 In some embodiments, the RF connection block 330 may include a block body 331 and a connector 332. The block body 331 is connected to a plurality of first carrier members 210 to provide support for the plurality of first carrier members 210 and can simultaneously feed RF power to the plurality of first carrier members 210. The connector 332 is fixedly connected to the block body 331 and connected to the elastic member 320. Thus, the mechanical connection and electrical connection between the block body 331 and the elastic member 320 can be realized through the connector 332.

[0061] For example, the block 331 can be an elongated structure that extends along the thickness direction of the first carrier 210 to facilitate connection with the plurality of first carriers 210 respectively. The connector 332 can be a columnar structure that can be connected at the middle position of the block 331 to facilitate more uniform distribution of radio frequency power through the block 331 to the plurality of first carriers 210.

[0062] Furthermore, the block 331 may be provided with multiple slots 3311, and in the thickness direction of the first support member 210, the feed ends 211 of each of the multiple first support members 210 are correspondingly engaged with the multiple slots 3311. This arrangement can ensure the firmness and stability of the connection between each first support member 210 and the block 331. In addition, the engagement and disassembly efficiency of the first support member 210 can be improved.

[0063] For example, the feed end 211 can be an L-shaped sheet structure, at least part of which is inserted into the slot 3311 and is subject to the snap-fit ​​limiting effect of the slot 3311 to ensure the firmness and stability of the assembly and facilitate disassembly and assembly.

[0064] It should be noted here that the structure of the grounding connection block 340 is basically the same as that of the radio frequency connection block 330, such as... Figure 10As shown. Furthermore, considering that the second carrier 220 is located outside the carrier assembly 200 and the first carrier 210 is located inside the carrier assembly 200, in this case, the number of second carriers 220 is one more than the number of first carriers 210. Based on this, the number of slots 3311 provided in the block 331 of the grounding connection block 340 is one more than the number of slots 3311 provided in the block 331 of the radio frequency connection block 330. For example, when the carrier assembly 200 has 9 pieces, it includes 4 first carriers 210 and 5 second carriers 220, specifically, pieces 1, 3, 5, 7, and 9 are second carriers 220, and pieces 2, 4, 6, and 8 are first carriers 210; correspondingly, the block 331 of the radio frequency connection block 330 has 4 slots 3311, and the block 331 of the grounding connection block 340 has 5 slots 3311. Of course, other forms are also possible, and no specific limitation is made here.

[0065] Figure 15 This is a partial schematic diagram of the bottom of the support component 200. The bottom of the support component 200 is provided with a connection component 300. The connection component 300 may include multiple radio frequency connection blocks 330 and multiple ground connection blocks 340. The multiple radio frequency connection blocks 330 and multiple ground connection blocks 340 are respectively located at the bottom of the first support member 210 and the second support member 220. Furthermore, each radio frequency connection block 330 and each ground connection block 340 is provided with multiple slots 3311. Since the bottom of the first support member 210 is provided with a feed-in end 211 and the bottom of the second support member 220 is provided with a ground end, the feed-in end 211 at the corresponding position of each first support member 210 can be inserted into the corresponding slot 3311 of the radio frequency connection block 330, so that radio frequency energy can be fed into the first support member 210. Similarly, the ground end 221 at the corresponding position of each second support member 220 can be inserted into the corresponding slot 3311 of the ground connection block 340, so that the second support member 220 can be grounded.

[0066] In addition, multiple radio frequency connection blocks 330 can be connected to multiple branch ends 311 of the connecting strip 310 via elastic members 320 to facilitate the transmission of radio frequency energy.

[0067] refer to Figure 13In some embodiments, the elastic component 320 may include a first connecting plate 321, a second connecting plate 322, and a plurality of flexible connectors 323. The first connecting plate 321 and the second connecting plate 322 are spaced apart and can be relatively close or relatively far apart. The plurality of flexible connectors 323 are respectively connected to the first connecting plate 321 and the second connecting plate 322. This arrangement allows the first connecting plate 321 and the second connecting plate 322 to move relative to each other through the flexible deformation of the flexible connectors 323, thereby meeting the installation requirements of the load-bearing component 200 and achieving adaptive adjustment. This ensures the reliability of the connection, avoids interference, and effectively alleviates the problem of poor contact caused by irreversible wear from hard contact.

[0068] For example, the flexible connector 323 can be welded together with the first connecting plate 321 and the second connecting plate 322 to ensure good electrical contact between the first connecting plate 321 and the second connecting plate 322 and to allow relative movement.

[0069] For example, the flexible connector 323 can be made of flexible conductive materials such as titanium alloy. In addition, it can be in the form of a strip structure. Of course, it can also be made of other materials or other shapes, which are not specifically limited here.

[0070] The first connecting plate 321 and the connecting body 332 are detachably connected, thus achieving both electrical conductivity and facilitating the movement of the supporting component 200. For example, the first connecting plate 321 may be provided with a guide hole, into which the connecting body 332 is movably inserted, thereby ensuring both reliable connection and convenient assembly / disassembly.

[0071] The second connecting plate 322 of a portion of the elastic component 320 is connected to the branch end 311 to facilitate a flexible connection between the radio frequency connecting block 330 and the connecting strip 310, thereby allowing the relative position between the radio frequency connecting block 330 and the connecting strip 310 to be adaptively adjusted, ensuring the reliability of the connection while avoiding interference.

[0072] The second connecting plate 322 of the other elastic component 320 is used for grounding, so as to realize the flexible connection between the grounding connection block 340 and the ground electrode, thereby allowing the relative position between the grounding connection block 340 and the ground electrode to be adaptively adjusted, ensuring the reliability of the connection and avoiding interference.

[0073] To ensure that the first connecting plate 321 and the second connecting plate 322 do not move arbitrarily, the elastic component 320 may further include a first guide structure 324 and a second guide structure 325, such as... Figure 13As shown, the first guide structure 324 is disposed on the side of the first connecting plate 321 facing the second connecting plate 322, and the second guide structure 325 is disposed on the side of the second connecting plate 322 facing the first connecting plate 321, with the first guide structure 324 and the second guide structure 325 in sliding engagement. The cooperation of the first guide structure 324 and the second guide structure 325 ensures that the first connecting plate 321 and the second connecting plate 322 move in directions that are relatively close or relatively far apart, preventing misalignment between the first connecting plate 321 and the second connecting plate 322 and thus avoiding positional shift between the bearing assembly 200 and the connecting strip 310, thereby ensuring the positional accuracy between the bearing assembly 200 and the connecting strip 310.

[0074] For example, one of the first guide structure 324 and the second guide structure 325 can be a guide post and the other can be a guide sleeve. Through the sliding cooperation between the guide post and the guide sleeve, smooth movement between the two can be ensured, and relative tilting between the two can be prevented.

[0075] In other embodiments, one of the first guide structure 324 and the second guide structure 325 can be a slide rail and the other can be a slide rail. Through the sliding cooperation of the slide rail and the slide rail, smooth movement between the two can be ensured, and relative tilting between the two can be prevented.

[0076] refer to Figure 4 and Figure 14 In some embodiments, the semiconductor process chamber may also include a support member 400 disposed within the chamber 100. The support member 400 is disposed opposite to the carrier component 200. The support member 400 can support and fix multiple elastic components 320 and connecting strips 310.

[0077] For example, the support member 400 may be located in the bottom region of the cavity 100, and the load-bearing assembly 200 may be located above the support member 400. In addition, the support member 400 may be made of ceramic material, which can ensure sufficient strength, corrosion resistance, and insulation.

[0078] Furthermore, such as Figure 14 As shown, the surface of the support member 400 facing the bearing assembly 200 may be provided with a plurality of first grooves 410, and a plurality of elastic members 320 are respectively disposed in the plurality of first grooves 410. In this way, the first grooves 410 can support the elastic members 320 in the longitudinal direction and limit the elastic members 320 in the transverse direction to prevent the elastic members 320 from moving arbitrarily.

[0079] The surface of the support member 400 facing the load-bearing component 200 may also be provided with a second groove 420, and the connecting strip 310 is disposed in the second groove 420. In this way, the second groove 420 can provide a space for the connecting strip 310 to be accommodated, and can also limit the connecting strip 310 to prevent the connecting strip 310 from moving at will.

[0080] In addition, the second groove 420 is connected to the plurality of first grooves 410 respectively, so that the plurality of branch ends 311 of the connecting strip 310 can extend into the plurality of first grooves 410 respectively, thereby connecting the plurality of branch ends 311 to the elastic members 320 in each of the first grooves 410 respectively, so as to feed radio frequency power to each of the first carriers 210 through the plurality of elastic members 320 and the plurality of radio frequency connecting blocks 330 respectively.

[0081] In some embodiments, along the extending direction of the carrier component 200, the process space is divided into multiple receiving regions for accommodating wafers. Specifically, each receiving region has multiple locking points on the first carrier 210 and the second carrier 220, which secure the wafer to the receiving region for processing. Multiple receiving regions allow for the simultaneous processing of multiple wafers, thereby improving process efficiency.

[0082] Furthermore, multiple feed terminals 211 are arranged at intervals along the extension direction of the carrier component 200, and each feed terminal 211 is located at the center of its corresponding receiving area in this extension direction. Based on this arrangement, radio frequency power can be fed to the center of the corresponding receiving area through the feed terminals 211, thereby enabling radio frequency power to be fed to the center of each wafer, thus improving the uniformity of the electric field distribution. It should be noted that when the wafer is fixed within the corresponding receiving area, the center of the wafer coincides with the center of the receiving area.

[0083] In each first carrier 210, the distance between two adjacent feed terminals 211 is less than the electrical dimension of the RF power supply used to connect to the connecting strip 310. It should be noted here that the electrical dimension can be one-tenth of the wavelength of the electromagnetic wave, for example, the wavelength of 13.56MHz is 22m and the electrical dimension is 2.2m, the wavelength of 60MHz is 5m and the electrical dimension is 0.5m, and so on.

[0084] For example, taking a 1.5m long carrier component 200 with a wafer size of 20cm (e.g., a circular wafer with a diameter of 20cm, or a square wafer with a side length of 20cm, etc.) as an example, if the distance between two adjacent feed terminals 211 is less than the electrical size of 60MHz (i.e., 50cm), the electric field distribution on the carrier component 200 can form multiple sine waves of the same size, and the difference between the maximum and minimum values ​​is less than 5%, thereby ensuring the uniformity of the electric field distribution.

[0085] At a preset frequency (e.g., 60MHz), the electric field distribution of the carrier component 200 forms multiple sine waves of the same magnitude. In this case, the phases on the multiple feed terminals 211 need to be the same; that is, the transmission paths of the RF power corresponding to feed terminals 211 at different locations need to be equal. Based on this, the connecting strip 310 in this embodiment is used to connect to the RF power supply, and the distances from the multiple branch ends 311 of the connecting strip 310 to the RF power supply are equal. This ensures that the phases on each feed terminal 211 are the same, thereby improving the uniformity of the electric field distribution on the entire carrier component 200.

[0086] Taking a first carrier 210 with six feed-in terminals 211 as an example, in order to make the distances from multiple branch terminals 311 to the RF power supply equal, in this embodiment, the connecting strip 310 is divided into two equal parts, the resulting connecting strip 310 is then divided into two more parts, and the resulting connecting strip 310 is then divided into three more parts, thus forming six branch terminals 311. The lengths of the connecting strip 310 branches between each branch terminal 311 and the RF power supply are all equal, thereby ensuring that the RF transmission distance of each feed-in terminal 211 is equal. Through this arrangement, the connecting strip 310 can be divided into multiple parallel branches, such as... Figure 12 As shown, the RF transmission distance on each branch is equal to ensure that the phase of the multiple feed terminals 211 is the same, thereby improving the uniformity of the electric field distribution on the entire carrier component 200. Of course, the first carrier component 210 may also be provided with other numbers of feed terminals 211. The principle remains the same. As long as the distance from the multiple branch terminals 311 to the RF power supply is equal, the phase of the multiple feed terminals 211 can be guaranteed to be the same. The specific method is not limited.

[0087] It should be noted that, according to the embodiments of this application, the number of feed terminals 211 of each first carrier 210 can be changed according to different radio frequency power, and the distance between two adjacent feed terminals 211 can be less than 1 / 10 of the radio frequency wavelength, that is, less than the electrical dimension. Thus, when it is less than 1 / 10 of the radio frequency wavelength, the number of feed terminals 211 can be increased. For example, in the case of 60MHz, each first carrier 210 can be provided with 6 feed terminals 211, and it can also be increased to 7, 8, 9, 10, etc.; or, if the frequency is changed to 40MHz, then 4 feed terminals 211 can be used. In addition, when the length of the carrier component 200 increases, for example, from 1.5m to 1.75m, the number of feed terminals 211 can also be increased accordingly. For example, the number of feed terminals 211 can be adjusted from 6 for a 1.5m first carrier 210 to 7 for a 1.75m first carrier 210, etc.

[0088] refer to Figure 5 In some embodiments, the carrier component 200 may further include a first conductive block 230, a second conductive block 240, a first stern 250, and a second stern 260. The two ends of each of the plurality of first carrier members 210 extending in their respective directions are connected by the first conductive blocks 230. Thus, the first conductive blocks 230 at both ends can fix the plurality of first carrier members 210 and provide a certain degree of conductivity, thereby ensuring the stability of the plurality of first carrier members 210 and enabling energy transmission. In addition, the first conductive blocks 230 can also be used for gripping by a robotic arm to facilitate the movement of the carrier component 200. For example, the first conductive blocks 230 may have multiple first fixing grooves, and correspondingly, the two ends of the first carrier members 210 are respectively provided with first fixing protrusions, which are inserted into the first fixing grooves for installation.

[0089] Furthermore, the two ends of each of the multiple second carrier members 220 extending in their respective directions are connected by second conductive blocks 240. Thus, the second conductive blocks 240 at both ends can fix the multiple second carrier members 220 and also provide a certain degree of conductivity, thereby ensuring the stability of the multiple second carrier members 220 and enabling energy transmission. For example, the second conductive blocks 240 may have multiple second fixing grooves, and correspondingly, the two ends of the first carrier member 210 are respectively provided with second fixing protrusions, which are inserted into the second fixing grooves for installation.

[0090] The first boat corner 250 and the second boat corner 260 are respectively connected to the second conductive blocks 240 at both ends. Based on this, the first boat corner 250 and the second boat corner 260 can support the entire supporting assembly 200 to ensure the stability of the supporting assembly 200 within the cavity 100. Furthermore, the first boat corner 250 and the second boat corner 260 can also act as a barrier for the boat pieces. For example, both the first boat corner 250 and the second boat corner 260 are made of ceramic material to provide insulation.

[0091] In this embodiment, one end of the connecting strip 310 is connected to the radio frequency power supply, and the other end of the connecting strip 310 extends into the cavity 100 and is divided into multiple branch strips. Each branch strip corresponds to a branch end 311. Each branch end 311 is connected to an elastic member 320. Each elastic member 320 is connected to the connecting body 332 of the radio frequency connecting block 330. The block body 331 of each radio frequency connecting block 330 connects to and fixes the radio frequency ends of multiple first carriers 210 in the same area. At the same time, the block body 331 of each grounding connecting block 340 connects to and fixes the grounding ends 221 of multiple second carriers 220 in the same area. The second carriers 220 and the first carriers 210 are arranged alternately and grounded through the grounding connecting block 340. Based on this, the radio frequency power output by the radio frequency power supply can be sequentially introduced into multiple first carriers 210 via the connecting strip 310, multiple elastic components 320, and multiple radio frequency connecting blocks 330, and an electric field is formed between the first carrier 210 and the adjacent second carrier 220. Under the action of the electric field, the plasma can bombard the wafer to achieve the wafer processing.

[0092] Based on the aforementioned semiconductor process chamber, this application also discloses a semiconductor process apparatus. The disclosed semiconductor process apparatus includes a radio frequency (RF) power supply and the aforementioned semiconductor process chamber. The RF power supply is connected to a connecting strip 310 to feed RF power to the connecting strip 310, ultimately allowing the RF power to reach the wafer carried by the carrier component 200. In addition, the semiconductor process apparatus may also include other components; specific details can be found in related technologies and will not be elaborated here.

[0093] In summary, by changing the structure of the carrier component 200, the uniformity of the electric field on the carrier component 200 can be improved. For example, the relative difference between the maximum and minimum electric field values ​​on the carrier component 200 can be reduced to less than 5% to meet the process requirements for uniformity. In addition, the semiconductor process chamber in the embodiments of this application can also use very high frequency (e.g., 60MHz) to facilitate the fabrication of microcrystalline thin films.

[0094] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process chamber, characterized in that, include: A cavity (100), a support assembly (200) disposed within the cavity (100), and a connecting assembly (300) extending into the cavity (100) and connected to the support assembly (200). The carrier component (200) includes a plurality of first carriers (210) and a plurality of second carriers (220), wherein a first carrier (210) and an adjacent second carrier (220) are spaced apart to form a process space, each first carrier (210) is provided with a plurality of feed terminals (211), and each second carrier (220) is provided with a plurality of ground terminals (221). The connection assembly (300) includes a connection bar (310), a plurality of elastic components (320), a plurality of radio frequency connection blocks (330) and a plurality of ground connection blocks (340). The connection bar (310) includes a plurality of parallel branch ends (311). The connection bar (310) is used to connect to a radio frequency power supply. The plurality of radio frequency connection blocks (330) are respectively connected to the plurality of branch ends (311) through a portion of the elastic member (320), and the plurality of ground connection blocks (340) are respectively grounded through another portion of the elastic member (320); The plurality of feed terminals (211) of each first carrier (210) are respectively connected to the plurality of radio frequency connection blocks (330), and the plurality of ground terminals (221) of each second carrier (220) are respectively connected to the plurality of ground connection blocks (340); The distance between two adjacent feed terminals (211) in each of the first carriers (210) is less than the electrical dimension of the RF power supply used to connect to the connecting strip (310).

2. The semiconductor process chamber according to claim 1, characterized in that, Both the radio frequency connection block (330) and the ground connection block (340) include a block body (331) and a connector body (332). The block (331) is provided with a plurality of slots (3311). In the thickness direction of the bearing assembly (200), the feed end (211) of each of the plurality of first bearing members (210) or the ground end (221) of each of the plurality of second bearing members (220) is correspondingly engaged with the plurality of slots (3311). The connector (332) is fixedly connected to the block (331) and connected to the elastic component (320).

3. The semiconductor process chamber according to claim 2, characterized in that, The elastic component (320) includes a first connecting plate (321), a second connecting plate (322), and a plurality of flexible connectors (323). The first connecting plate (321) and the second connecting plate (322) are spaced apart and can be relatively close or relatively far apart. A plurality of flexible connectors (323) are respectively connected to the first connecting plate (321) and the second connecting plate (322). The first connecting plate (321) is detachably connected to the connecting body (332), the second connecting plate (322) is connected to the branch end (311), or the second connecting plate (322) is used for grounding.

4. The semiconductor process chamber according to claim 3, characterized in that, The elastic component (320) further includes a first guide structure (324) and a second guide structure (325); The first guide structure (324) is located on the side of the first connecting plate (321) facing the second connecting plate (322), and the second guide structure (325) is located on the side of the second connecting plate (322) facing the first connecting plate (321), and the first guide structure (324) and the second guide structure (325) are in sliding engagement.

5. The semiconductor process chamber according to claim 1, characterized in that, The semiconductor process chamber also includes a support member (400) disposed within the cavity (100), the support member (400) being disposed opposite to the carrier assembly (200); The support member (400) has a plurality of first grooves (410) and second grooves (420) on its surface facing the bearing assembly (200), and the second grooves (420) are respectively connected to the plurality of first grooves (410); Multiple elastic components (320) are respectively disposed in multiple first grooves (410), and the connecting strip (310) is disposed in the second groove (420).

6. The semiconductor process chamber according to claim 1, characterized in that, Along the extending direction of the carrier component (200), the process space is divided into a plurality of accommodating regions for accommodating wafers; The plurality of feed ends (211) are spaced apart along the extension direction, and each feed end (211) is located at the center of the corresponding receiving area in the extension direction.

7. The semiconductor process chamber according to claim 1, characterized in that, The plurality of branch ends (311) of the connecting strip (310) are equidistant from the radio frequency power supply for connection with the connecting strip (310).

8. The semiconductor process chamber according to claim 1, characterized in that, The carrier component (200) further includes a first conductive block (230), a second conductive block (240), a first stern (250), and a second stern (260); The two ends of each of the plurality of first carrier members (210) in their respective extension directions are connected by the first conductive block (230); The two ends of each of the plurality of second carrier members (220) in their respective extension directions are connected by the second conductive block (240); The first boat angle (250) and the second boat angle (260) are respectively connected to the second conductive blocks (240) at both ends.

9. A semiconductor process apparatus, characterized in that, It includes a radio frequency power supply and a semiconductor process chamber as described in any one of claims 1 to 8.

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