Method for manufacturing conductive channel structure in substrate and interposer arrangement

Abstract

A method of manufacturing an electrically conductive channel structure in a substrate, comprising the steps of: (-) providing a stack arrangement in a clamping device, the invention relates to a method for producing a stacked arrangement comprising a substrate provided with a channel structure, a metal film on the substrate having an aluminum material (= also an alloy of the aluminum material), and a compressible sealing element at least laterally surrounding the metal film while applying pressure, (-) applying a planar mechanical process pressure and process temperature to the stacked arrangement with a clamping device, and (-) cooling the stack arrangement to solidify the introduced metal filling material and to obtain an electrically conductive channel structure filled with the metal filling material, in order to melt the metal film comprising the aluminum material at a process temperature and to introduce it as the metal filling material into the channel structure by means of a mechanical process pressure acting in a planar manner, and (-) cooling the stack arrangement to solidify the introduced metal filling material and to obtain an electrically conductive channel structure filled with the metal filling material.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a conductive channel structure in a substrate, such as a glass substrate or a silicon substrate, and an interposer arrangement. The interposer arrangement can be manufactured using the described manufacturing method.

[0002] The present invention relates to a conductive channel structure (through via or through hole, blind hole, 3D structure) made of / having aluminum material in a substrate which may have glass, quartz, sapphire, ceramic or semiconductor material. In particular, the present invention relates to a TGV (through glass via) or a conductive channel structure (through hole or blind hole) made of / having aluminum material in a glass substrate. The present invention further relates to a TSV (TSV=through silicon via) or a conductive channel structure (through hole or blind hole) made of / having aluminum material in a silicon substrate.

[0003] The invention further relates to an interposer arrangement having a conductive channel structure extending at least partially through a substrate and comprising an aluminium material or an aluminium material alloy.For example, the interposer arrangement may be manufactured using a method for manufacturing a conductive channel structure in a substrate. Background Art

[0004] In semiconductor technology, the term "via" (or "through via") through a substrate, such as a silicon or glass substrate or a PCB (printed circuit board), refers to a vertical electrical connection made of metal that passes through a substrate (which can also be a wafer or chip) in order to establish an electrical connection between two or more metallization layers on opposite sides of the substrate.

[0005] Various competing technologies are known for producing conductive through-contacts or vias through a wafer substrate, which are based on filling the vias with solder (soft solder) or electroplated copper. Such vias consist of an opening (hole) through the substrate, which is plated with copper, forming an electrical connection through the layers of the substrate. Such through-contacts also require an adhesive layer on the via walls, which makes the final manufacturing process relatively complex.

[0006] The microtechnological processing used to date also features 2.5D technology, i.e. practically only 2D structures can be structured by photolithography, which extend vertically in depth, e.g. by high-speed etching. This limits the design options to purely vertical vias, where the use of adhesion promoters also leads to relatively poor high-frequency performance due to the skin effect (current displacement effect), since the current through the via is concentrated at the surface (edge ​​region) with increasing frequency, i.e. in the less conductive adhesion promoter. Furthermore, the limitation to purely vertical vias also stems from the fact that the sidewall metallization that is usually required for electroplated copper may only be applicable to accessible (i.e. vertically extending) surfaces, i.e. surfaces that are not covered by other structures.

[0007] For example, alternative manufacturing processes use pin vias embedded in glass made of highly conductive silicon, molybdenum or tungsten, although these materials are less suitable for high-frequency and quantum technology applications. Summary of the invention

[0008] It is therefore a general object of the present invention to provide an improved method for manufacturing a conductive via structure in a substrate, and further to provide a correspondingly improved interposer arrangement (eg, which may be manufactured using the improved manufacturing method).

[0009] This object is achieved by a method for manufacturing a conductive channel structure in a substrate and an interposer arrangement provided by the present invention.

[0010] Specific embodiments, implementations and further developments of the invention are also defined herein.

[0011] According to an embodiment, a method for manufacturing a conductive channel structure in a substrate includes the following steps: - providing a stacking arrangement in a clamping device, the stacking arrangement including a substrate provided with a channel structure, a metal film (or sheet) having an aluminum material (= it can also be an aluminum material alloy) on the substrate, and a compressible sealing element configured to (at least) laterally surround the metal film while applying pressure, - applying a planar (or laminar) mechanical process pressure and a process temperature on the stacking arrangement using the clamping device to melt the metal film containing the aluminum material at the process temperature and introduce it into the channel structure as a metal filling material through a planar mechanical process pressure, and - cooling the stacking arrangement to solidify the introduced metal filling material and obtain a conductive channel structure filled with the metal filling material.

[0012] For example, the compressible sealing element may be configured as an overlapping surface seal or a closed loop seal.The compressible sealing element may also be configured for high temperature applications at process temperatures (as a compressible high temperature sealing element).

[0013] The present invention is therefore based on the discovery that a novel and advantageous method for producing conductive channel structures in substrates (e.g. in the form of feedthroughs, 3D (three-dimensional) structures, passive components or blind vias, etc.) can be performed, wherein channel structures in dielectric substrates, such as through holes, blind vias or 3D structures, can be pressure filled with aluminum melt (based on a metal film comprising aluminum material or an aluminum material alloy). Channel structures with different geometries in terms of hole diameter, side angle, channel inclination and channel length can be filled.

[0014] Furthermore, the method of the invention for producing a conductive via structure in a substrate obtains or produces a corresponding interposer arrangement.

[0015] According to a further embodiment, the interposer arrangement comprises a substrate having an electrically conductive and / or thermally conductive channel structure extending at least partially through the substrate, the channel structure comprising an aluminum material or an aluminum material alloy, wherein the electrically conductive and / or thermally conductive channel structure extends from a main surface area of ​​the substrate into the substrate.

[0016] The aluminum material or the aluminum material alloy has at least 80% or 90% aluminum as a main component to have a final melting point of at least 420° C. (or 520° C.) or between 420° C. (or 520° C.) and 850° C. as a brazing material. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Preferred embodiments of the present invention are explained in more detail below with reference to the accompanying drawings and diagrams, in which:

[0018] Figure 1 is a schematic flow chart of a manufacturing method of the present invention according to an embodiment;

[0019] Figure 2a is an exemplary schematic flow chart of a manufacturing method of the present invention according to a further embodiment, such as having overlapping surface seals;

[0020] Figure 2b is an exemplary principle flow chart of a manufacturing method of the present invention according to a further embodiment, such as having a closed loop seal;

[0021] Figure 3a Shown by Figure 1 or exemplary Al-TGVs (aluminum through glass vias) in glass (e.g., quartz glass) produced by the manufacturing method of FIG. 2 ;

[0022] Figure 3b is a detailed representation of the interface connection between the conductive aluminum filler (Al-TGV) and the glass (such as borosilicate glass), which is connected by Figure 1 Or produced by the manufacturing method of Figure 2;

[0023] Figure 4a -b shows the (by Figure 1 or an example of Al-Cu melt filling in a quartz substrate produced by the manufacturing method of FIG. 2 ;

[0024] Figure 5a -c shows an exemplary process for obtaining improved electrical performance of a through-hole (Al-TGV) according to an embodiment;

[0025] Figure 5d Another exemplary process for obtaining improved electrical performance of a through-hole via (Al TGV) according to an embodiment is shown;

[0026] Figure 6a-i shows exemplary geometries of channel structures with different sizes and wall angles (for filling Figure 1 Or the manufacturing method of the present invention of Figure 2);

[0027] Figure 7 is used for Figure 1 or a schematic representation of a further possible substrate topology of the manufacturing method of the present invention of FIG. 2 ;

[0028] 8-12 show exemplary embodiments of an inserter arrangement or a portion of an inserter arrangement according to further embodiments;

[0029] Figure 8a -e is a schematic representation of an exemplary interposer arrangement (with possible substrate topologies) according to further embodiments, for example, Figure 1 Or the manufacturing method of the present invention of FIG. 2 is obtained;

[0030] Figure 9a According to an embodiment, Figure 1 or the exemplary 3D channel structure (e.g., aluminum-filled 3D spiral structure) produced by the manufacturing method of the present invention of FIG. 2 ;

[0031] Figure 9b yes Figure 9a A magnified 3D X-ray tomography image of the aluminum-filled 3D helical structure;

[0032] Fig.10 According to the embodiment, Figure 1 or a perspective view (3D view) of a component (in the form of a metal-filled spiral) in a glass substrate produced by the manufacturing method of FIG. 2 ;

[0033] Fig.11 According to the embodiment, Figure 1 or a perspective view of a component (in the form of a thin film getter structure with through-hole contacts) produced by the manufacturing method of FIG. 2 ;

[0034] Fig.12a -b is the pass according to the example Figure 1 or a perspective view and a cross-sectional view of a component (in the form of a capacitor structure) produced by the manufacturing method of FIG. 2 ;

[0035] Fig.13a -c is a diagram of an embodiment with Al-TGV (via Figure 1 A cross-sectional view of a package component (e.g., a MEMS, a sensor, and / or an IC) for electrical connection (as an electrical through hole) and / or thermal connection (for heat dissipation) produced by the manufacturing method of FIG. 2 ;

[0036] Fig.14 According to the embodiment, Figure 1or an exemplary schematic flow chart of the further processing (on wafer level) of the stack arrangement obtained by the manufacturing method of FIG. 2 ; and

[0037] Figure 15-22 An exemplary schematic flow chart of a further and alternative process for manufacturing a conductive via structure by introducing a metal filling material according to a further embodiment is shown.

[0038] Before explaining the embodiments of the present invention in more detail below with reference to the accompanying drawings, it should be pointed out that the same elements, objects, functional blocks and / or process steps or elements, objects, functional blocks or process steps with the same functions or the same effects are represented by the same figure marks in different figures, so that the descriptions of these elements, objects, functional blocks and / or process steps shown in different embodiments (using the same figure marks) are interchangeable or mutually applicable. DETAILED DESCRIPTION

[0039] In the following description, a description of an element made of a material such as glass, quartz, sapphire, ceramic, or semiconductor material means that the element includes such a material, ie, is at least partially or completely formed of a semiconductor material.

[0040] It should be understood that when an element is described as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intervening elements. Conversely, if an element is described as being "directly" "connected" or "coupled" to another element, there are no intervening elements. Other expressions used to describe the relationship between elements should be interpreted in the same manner (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.).

[0041] In order to simplify the description of various embodiments, at least some of the figures have a Cartesian coordinate system x, y, z, wherein the directions x, y and z are arranged orthogonally to each other. In an embodiment, the xy plane corresponds to the main surface area of ​​the carrier or substrate (=reference plane=xy plane), wherein the vertical upward direction relative to the reference plane (xy plane) corresponds to the "+z" direction, and the vertical downward direction relative to the reference plane (xy plane) corresponds to the "-z" direction. In the following description, the term "lateral" refers to a direction parallel to the x and / or y direction, i.e. parallel to the xy plane, and the term "vertical" refers to a direction parallel to the + / -z direction.

[0042] In the context of this specification, terms and / or text paragraphs in brackets should be understood as further explanation, exemplary implementation, supplement and / or exemplary replacement (for the previous term or the previous text paragraph).

[0043] Below, refer to Figure 1A schematic flow diagram of a method 100 according to the invention for producing a conductive channel structure in a substrate is described by way of example. The arrangement obtained in the production method 100, i.e. a substrate with a conductive channel structure or through-hole, can then be used, for example, as a so-called interposer arrangement 50 for electronic components for their rewiring and / or heat dissipation, etc.

[0044] Reference Figure 1 In method 100, in step 120, a stacking arrangement is provided in a clamping device (clamping arrangement), wherein the stacking arrangement includes a substrate provided with a channel structure, a metal film having an aluminum material or an aluminum material alloy on the substrate, and a compressible sealing element, which (at least) laterally surrounds the metal film when pressure is applied to the surface of the metal film.

[0045] For example, the compressible sealing element may be configured as an overlapping surface seal or a closed loop seal.The compressible sealing element may also be configured for high temperature applications at process temperatures (as a compressible high temperature sealing element).

[0046] In a (subsequent) step 140, a planar (or laminar) mechanical process pressure and a process temperature are applied to the stack arrangement using (through) a clamping device so as to melt (liquefy) the metal film containing the aluminum material at the process temperature and introduce it into the channel structure as a metal filling material through a planar mechanical process pressure.

[0047] According to an embodiment, in step 140, for example, the liquefied material of the metal film is enclosed between the compressible surface sealing element and the substrate provided with the channel structure, because the compressible surface sealing element covers the metal film and overlaps with the edge area of ​​the metal film, thereby enclosing (covering and laterally enclosing) the metal film while applying pressure to the substrate. This can prevent the liquefied / molten material of the metal film from escaping laterally through the surrounding surface sealing element.

[0048] According to a further embodiment, in step 140, for example, the liquefied material of the metal film is enclosed between a first tool (e.g. a stamping punch) of a clamping device and a substrate provided with a channel structure, wherein a compressible ring sealing element (= closed ring seal) surrounds (encloses) an edge region of the metal film, such that the ring sealing element laterally (between the substrate and the first tool) encloses the metal film while applying pressure. This can prevent the liquefied / molten material of the metal film from leaking (escaping) laterally through the closed ring sealing element.

[0049] In a subsequent step 160 , the stack arrangement is cooled to re-solidify (harden) the introduced metal filling material (ie the metal filling material melted during the introduction process) to obtain a conductive channel structure filled with the (solidified) metal filling material.

[0050] According to an embodiment, the channel structure may be configured as at least one through structure, at least one blind hole structure, or at least one 3D structure in the substrate.

[0051] According to an embodiment, the metal film may have an aluminum material as a main component (≥80%), whose final melting point is at least 420° C. (or 520° C.) or between 420° C. (or 520° C.) and 850° C. According to an embodiment, the (increased) process temperature may be set to a value at least 10K or 20K higher than the melting temperature of the metal film including the aluminum material.

[0052] According to an embodiment, the channel structure may have a coating (wall coating) comprising a nitride material, such as AlN (aluminum nitride), SiN (silicon nitride) or TiN (titanium nitride) with a thickness in the range of 2 to 100 nm.

[0053] According to an embodiment, the compressible sealing element may be configured as a compressible surface sealing element. According to an embodiment, the surface sealing element may cover the metal film and have a lateral protrusion (laterally beyond the metal film), i.e. overlap the metal film, so as to enclose the metal film to the substrate when a mechanical process pressure is applied.

[0054] According to an embodiment, the compressible sealing element may be configured as a compressible annular sealing element, wherein the annular sealing element surrounds an edge region of the metal membrane and laterally encloses the metal membrane when pressure is applied.

[0055] According to an embodiment, the sealing element may be configured as a reusable high temperature seal or gasket.According to an embodiment, the sealing element may include or consist of a graphite film or a structured (annular) graphite film having a thickness in the range of 0.3 to 1 mm or about 0.5 mm.

[0056] According to one embodiment, the clamping arrangement may comprise a first and a second tool, wherein the stacking arrangement is arranged between the first and the second tool. According to one embodiment, the step of applying a mechanical pressure between the first and the second tool may be at 10 N / cm 2 Up to 600N / cm 2 According to one embodiment, the first and / or second tool may be configured to heat the stack arrangement to a process temperature.

[0057] According to one embodiment, the first tool may be configured as a punch (or die), and the second tool may be configured to face the substrate, wherein a main surface area of ​​the second tool facing the substrate has an average roughness value R a Or average roughness depth R Z Surface roughness between 0.5 and 10 μm or about 3 μm.

[0058] According to one embodiment, the main surface area of ​​the second tool facing the substrate may have a coating to provide surface roughness of the main surface area of ​​the second tool facing the substrate. The coating may prevent adhesion of molten aluminum while preventing adhesion of hot glass substrates. According to one embodiment, the coating may include a boron nitride material.

[0059] According to one embodiment, the surface roughness of a major surface area of ​​the second tool adjacent to the substrate may / can be selected to act as an effective flow barrier for the molten metal and to allow lateral escape of gases present in the channel structure.

[0060] According to an embodiment, the substrate may include or consist of glass, quartz, sapphire, ceramic, or a semiconductor material.

[0061] According to one embodiment, the method 100 may further include removing excess metal filling material on one side of the main surface area of ​​the substrate or on both sides of two opposite main surface areas of the substrate. According to one embodiment, the excess material may be removed by a CMP (chemical mechanical polishing) process.

[0062] According to an embodiment, the method may further comprise removing the stacking arrangement from the clamping arrangement and removing the sealing element from the substrate.

[0063] According to one embodiment, the method may further include performing metallization on one or both sides by a thin film deposition process to obtain a metallization structure electrically connected to the conductive channel structure on one or both main surface areas of the substrate provided with the conductive channel structure by a photolithography patterning process and a subsequent etching step.

[0064] According to the invention, a novel, advantageous method for producing an electrically conductive channel structure in a substrate (e.g. in the form of a feedthrough, a 3D structure, a passive component or a blind hole, etc.) is thus obtained, wherein the channel structure (e.g. a through hole in an insulating substrate) is pressure-filled with an aluminum melt (based on a metal film containing an aluminum material or an aluminum material alloy). Channel structures with different geometries in terms of hole diameter, side angle, channel inclination and channel length can be filled.

[0065] To achieve this, the method first provides a stacking arrangement in a clamping device, the stacking arrangement comprising a substrate provided with a channel structure, a metal film comprising an aluminum material (or an aluminum material alloy) on the substrate, and a compressible sealing element. The compressible sealing element surrounds (encloses) the metal film at least laterally (as an annular seal) or encloses the metal film to the substrate (as a surface seal) under pressure.

[0066] Then, a planar mechanical process pressure and an (increased) process temperature are applied to the stack arrangement by means of a clamping device so as to melt the metal film comprising the aluminum material at the process temperature and introduce or press it into the channel structure as a metal filling material by means of the planar mechanical process pressure. Finally, the stack arrangement is cooled to solidify the introduced metal filling material and obtain a conductive channel structure filled with the metal filling material.

[0067] In this context, it is worth noting that aluminum itself acts as an adhesion promoter for glass, quartz, ceramic or sapphire substrates. Bonding to silicon substrates and silicon oxide substrates is also possible. Therefore, the provision of an additional adhesion promoter layer can be omitted or no longer required, which not only makes the manufacture of aluminum feedthroughs (Al-Via) easier than conventional manufacturing methods, but also makes it possible to fill real 3D structures.

[0068] The sidewall wettability can optionally be improved by a dielectric coating. Conformal deposition ALD (atomic layer deposition) technology or LP-CVD (low pressure chemical vapor deposition) technology is particularly suitable for this purpose. Dielectric layer materials suitable for this are, for example, aluminum nitride (AlN), aluminum oxide (Al2O3), silicon nitride (SiN), titanium nitride (TiN), etc., for example, with a thickness in the range of 2 to 100 nm or 30-50 nm.

[0069] Thus, the aluminum wettability of the channel structure can be favorably influenced by pre-coating the channel structure with SiN, AlN, TiN, etc. using an LP-CVD or ALD process. The coating thickness is in the range of 2 nm to 100 nm, or (preferably) in the range of 30 to 50 nm. The (conformal) pre-coating can be used to fill smaller via diameters (in the range of 5 to 15 μm) at the same process temperature and pressurization, or in the case of larger via diameters, in particular to reduce the required pressurization.

[0070] Since aluminum has very good ductility (= the property of plastic deformation under load before failure), aluminum can be easily pressed into the opening of the substrate in molten form by a hot filling process or a hot filling process, and there is not a large difference in the thermal expansion coefficient between the substrate material (such as glass, silicon, etc.) and the aluminum material or aluminum alloy, which would lead to substrate damage, cracking or interface separation between the metal and the substrate.

[0071] The filling process of the pore and / or channel structure can be improved by removing the gas in the pore and / or channel structure by applying a suction vacuum (= by applying a negative pressure to the atmospheric pressure), or by introducing a protective gas environment to prevent thermal oxidation, in particular thermal oxidation at the wetting front. In the case of pore and / or channel structures of complex shape (e.g. 3D structures), unblocking the channel structure before filling, for example unblocking from two opposite channel inlets at the same time, can prevent the occurrence of unwanted air cavities during the channel to be filled.

[0072] The particularly close interface connection between substrate (eg dielectric substrate) and aluminum filling also opens up the possibility of producing sealed vias.

[0073] The method 100 is suitable for sequentially filling a single hole structure, a hole arrangement group (chip / module), or all hole structures 12 - 1 present on the substrate 12 in a common parallel filling process step.

[0074] Figure 2a An exemplary schematic flow chart of a method 100 of the present invention for fabricating a conductive pathway structure 12 - 2 in a substrate 12 , such as using overlapping surface sealing, is shown.

[0075] therefore, Figure 2a Shows Figure 1 A possible implementation of the various method steps of the flowchart of the manufacturing method 100 is shown. The arrangement obtained in the manufacturing method 100, i.e. the substrate with the electrically conductive channel structures or vias, can then be used, for example, as a so-called interposer arrangement 50 for electronic components, such as a rewiring interposer, electrically conductive vias, (passive) electrical components or for heat dissipation or the like.

[0076] Reference Figure 2a In the method 100, in step 120, a stacking arrangement 10 is provided in a clamping device 30 (clamping arrangement), wherein the stacking arrangement 10 includes a substrate 12 provided with a channel structure 12-1, a metal film 14 including an aluminum material or an aluminum material alloy on the substrate 12, and a compressible surface sealing element 16 covering the metal film 14 and surrounding the metal film 14 when a (planar action) pressure is applied to the substrate 12.

[0077] according to Figure 2a In the illustrated embodiment of the production method 100 , the clamping device 30 may have a first and a second tool 32 , 34 , wherein the stack arrangement 10 is arranged or clamped (flush) between the first and second tool 32 , 34 of the stack arrangement 30 .

[0078] In a (subsequent) step 140 , a planarly acting mechanical process pressure F is then exerted on the stack arrangement 10 by means of (via) the clamping device 30 . P and process temperature T P, so that at the process temperature T P The metal film 14 containing aluminum material is melted (liquefied) and the mechanical process pressure F acting on the plane is applied. P This is introduced into the channel structure 12 - 1 as metal filling material 14 - 1 .

[0079] For example, in step 140, the liquefied material 14-1 of the metal film 14 is enclosed between the compressible surface sealing element 16 and the substrate 12 provided with the channel structure 12-1 to prevent the liquefied (molten) material 14-1 in the metal film 14 from leaking (escaping) laterally through the surrounding surface sealing element 6.

[0080] The compressible surface sealing element may at least partially or completely cover the metal film, wherein, for example, at least the (entire) edge region of the metal film is (completely) overlapped by the compressible surface sealing element 16 .

[0081] According to one embodiment, the surface sealing element can cover the metal film and have a lateral overlap outside the edge of the metal film, wherein this overlap of the surface sealing element 14 can have, for example, a ring-shaped circumferential thickening or bulge (protrusion) 16-1 outside the edge area of ​​the metal film, which extends (as a lowered edge area of ​​the surface seal) to the substrate. As a result, the surface sealing element can completely surround the metal film without applying a planar mechanical process pressure F P .

[0082] In a subsequent step 160 , the stack arrangement 10 is cooled to resolidify (solidify) the introduced metallic (molten) filling material 14 - 1 to obtain a conductive channel structure 12 - 2 filled with the (solidified) metallic filling material 14 - 1 .

[0083] Therefore, in Figure 2a In the illustrated exemplary manufacturing method 100, aluminum pressure melt filling of the channel structure 12-1 is performed in the substrate 12. Here, the (second) tool 34 of the clamping device 30 arranged on the substrate 12, for example, serves as a counter substrate to obtain a flow stop (or flow stop function) during the melt filling process, wherein the compressible high temperature seal 16 is provided as an overlapping boundary or closure to cause lateral leakage or escape of the liquefied (molten) material 14-1 in the metal film 14 on the side of the substrate 12 adjacent to the first tool 32 of the clamping device 30.

[0084] According to one embodiment, a mechanical pressure F is applied 140 between the first and second tools 32 , 34 of the clamping device 30 . P The step can be greater than 10N / cm 2 or at 10N / cm 2 and 600N / cm 2The contact pressure is performed within a range between (between the first tool 32 and the second tool 34 ).

[0085] According to one embodiment, the first or second tool 32, 34 or both tools 32, 33 of the clamping device 30 may be configured to heat the (clamped) stack arrangement 10 to an (increased) process temperature T P This process may also be referred to as tempering. In the context of this specification, tempering (application of process temperature) is understood to mean a temperature treatment, such as time-controlled uniform heating of the stack arrangement, such as application of a planar mechanical pressure F between the first and second tools 32, 34 of the clamping device 30. P The temperature treatment is applied simultaneously.

[0086] For example, a process temperature T is applied to the stack arrangement 10 P Step 140 may be performed with a predetermined temperature profile (or temperature ramp). For example, a process temperature T is applied 140 to the stack arrangement 10. P (The peak temperature) may last for 1 to 30 seconds (eg, 3 to 15 seconds or 3 to 5 seconds) (depending on the material of the metal film 14).

[0087] The stack arrangement 10 is heated and a process temperature T of 140° is applied to the stack arrangement 10. P (Peak temperature) can be performed, for example, independently of alloying, provided that this has been presented. The production of the AlCu melt can be performed during the heating process and does not lead to a significant extension of the process. The extension (due to alloying) can be in the range of 15 to 20 seconds.

[0088] like Figure 2a As shown in the example of step 120, the stacking arrangement 10 has a vertical direction ( Figure 2a The compressible surface sealing element 16 (high temperature sealing) of the embodiment of the present invention is a metal film 14 having an aluminum material (= also an aluminum material alloy) and a substrate 12 provided with one or more channel structures 12-1, such as perforated glass quartz, sapphire ceramic or a semiconductor substrate (wafer). Figure 2a In the illustrated embodiment of the manufacturing method 100, the first tool 32 is configured as, for example, a stamping punch, and the second tool 34 of the clamping device 30 is configured as a (e.g., coated) opposing substrate, wherein the second tool 34 also effectively serves as a flow stopper for the liquefied material 14-1 of the metal film 14 during the filling process.

[0089] The material of the compressible surface seal element 16 also prevents the liquid aluminum 14-1 from contacting the pressure or stamping punch 32. In addition, the liquid aluminum 14-1 does not adhere to the material of the compressible surface seal element (high temperature surface seal) 16. Typical suitable materials for the compressible surface seal element are, for example, materials such as graphite or boron nitride.

[0090] about Figure 2a The process flow 100 shown further points out that the order of the stacking arrangement 10 between the first and second tools 32, 34 of the clamping device 30 can also be reversed (inverted) without (significantly) changing or impairing the process result, since gravity effects (generally speaking) have no influence on the filling process.

[0091] By applying a mechanical process pressure F P and elevated process temperature T P (Tempering process), the material of the metal film 14 including the aluminum material is liquefied (melted), and the channel structure 12-1 of the substrate 12 is pressure-filled. In this case, by compression of the compressible surface sealing element 16 (planar action application of mechanical pressure), the metal film 14 is surrounded or enclosed by the surface sealing element 16 until the substrate 12 (also laterally). Due to the flow blocking effect of the surface 34-1 of the counter substrate or the counter substrate 34, the filling process in step 140 is carried out all the way to the surface 34-1 of the second tool 34 used as the clamping device 30 of the counter substrate.

[0092] According to one embodiment, the main surface area 34 - 1 of the second tool 34 (opposite to the substrate) facing the substrate 12 may have a central roughness value R a Or average roughness depth R Z Surface roughness between 0.5 μm and 10 μm or about 3 μm. This surface quality (roughness) of the main surface area 34-1 of the second tool 34 facing the substrate 12 prevents the molten metal (molten aluminum) from adhering to this main surface area 34-1 of the second tool 34 during the pressure filling process and also prevents the molten metal (molten aluminum) from adhering to the main surface area 34-1 of the second tool 34 at the process temperature T P The hot substrate 12 (eg, a glass substrate) is adhered to the main surface area 34 - 1 of the second tool 34 .

[0093] According to one embodiment, the main surface area 34-1 of the second tool 34 facing the substrate 12 may have a coating 36 to provide such surface roughness of the main surface area 34-1 of the second tool 34 facing the substrate. Therefore, the surface roughness of the main surface area 34-1 of the second tool 34 facing the substrate 12 may be obtained, for example, by the coating 36, wherein the coating 36 may include or consist of a boron nitride material. Boron nitride (BN) does not react with the liquefied material (aluminum material) 14-1 of the metal film 14 because boron nitride has oxidation resistance at temperatures up to about 800° C. and does not react with glass or metal. In addition, BN does not adhere to glass, and hot glass blocks do not adhere to BN.

[0094] In addition, the boron nitride material can provide the desired surface roughness of the second tool 34, which can further allow air / gas to escape laterally from the channel structure 12-1 of the substrate 12 during the filling process, while the surface quality has or provides the desired flow-stopping effect for the molten metal 14-1 on the surface 34-1 of the opposing substrate 34 (second tool).

[0095] As manufacturing method 100 Figure 2a As further shown by way of example in FIG. 1 , the first tool 32 (stamping punch) may further include a non-stick coating 38 on its main surface area 32-1 (facing the substrate 12), which allows for simplified disassembly (removal) of the first tool 32 from the stacking arrangement 10, i.e., from the compressible face sealing element 16, after the filling and cooling operations 140, 160 of the method 100. For example, the non-stick coating 36 may be arranged on (or form) the main surface area 32-1 of the first tool 32 facing the stacking arrangement 10.

[0096] Thus, according to one embodiment, the coating 36 of the second tool 34 may include a boron nitride material, wherein the surface roughness of the main surface area of ​​the second tool 34 adjacent to the substrate 12 is selected to serve as an effective flow barrier for the molten metal and to allow lateral escape of the gas present in the channel structure 12-1 of the substrate 12. Thus, the flow front of the molten material 14-1 of the metal film 14 may hit the plate 34 (second tool 34) located below the substrate 12 and having a rough boron nitride coating. The flow front pushes the gas in the channel downward and stops flat on the substrate 12. The gap configured by the roughness of the coating is very narrow, so that the flow front may not move laterally between the substrate 12 (e.g., a glass substrate) and the second tool (counter substrate) 34. Through this process, a protective gas environment is helpful / possible, but not absolutely necessary. This can provide sufficient control of the flow front.

[0097] According to one embodiment, the substrate 12 may include, for example, a dielectric material such as glass, quartz, sapphire, ceramic, etc., or a semiconductor material such as silicon (polycrystalline silicon). When silicon (polycrystalline silicon) is used as the substrate 12, for example, it may be necessary to provide an additional barrier layer and an insulating layer, for example made of SiO2, to prevent possible reaction of the hot liquid Al material with the silicon.

[0098] For example, the step 160 of cooling the stack arrangement 10 may be performed with a predetermined temperature profile (or temperature ramp, as in the step of applying a process temperature), for example to ensure that the cooling of the components and structures involved is as gradual as possible over the materials due to different thermal expansion coefficients.

[0099] The cooling process 160 may be performed, for example, with an (average) temperature change (cooling) of 20 to 500 K (or 30 to 400 K or 300 to 400 K) per minute (until a normal temperature (e.g., a removal temperature of the filled substrate 12, e.g., in a range between ambient temperature and about 200° C.) is reached). The time required for the cooling process may depend on, for example, the structure of the clamping device 30 and, for example, the structure of the punch unit 32.

[0100] After step 160 of cooling the stack arrangement 10 and the clamping device 30, the mechanical process pressure F acting on the plane P After release, the stack arrangement 10 can be removed from the clamping device 30 and subsequently the surface sealing element 16 can also be removed from the substrate 12. After removing the substrate (e.g. glass substrate) 12, which is provided with, for example, an aluminum feedthrough (e.g. aluminum TGV) 12-2 and a loose seal (surface sealing element) 16, the substrate 12, which is provided with, for example, a conductive channel structure 12-2, can be fed into one or more further processing steps.

[0101] Therefore, the method 100 may further (optionally) remove excess metal fill material 14 - 2 from one side of the major surface region or both sides of the opposing major surface regions of the substrate 12 , for example using a chemical mechanical polishing (CMP) process.

[0102] In addition, in method 100, metallization can (optionally) be performed on one or both sides of the substrate 12 using a thin film deposition process to obtain a metallization structure electrically connected to the conductive channel structure 12-2 on one or two main surface areas of the substrate 12 configured with the conductive channel structure 12-2, for example through a photolithography patterning process and a subsequent etching step.

[0103] Thus, the method 100 of the present invention for manufacturing a conductive channel structure 12-2 in a substrate 12 can be used to obtain, for example, an arrangement of an inserter 50, which includes a channel structure 12-2 completely filled with metal in a substrate 12 (e.g., a flat substrate), wherein, for example, a chemical bonding area (interface) between the metal filler 14-1 of the channel structure 12-2 and the channel wall is obtained without, for example, requiring or using a coating of a metal thin film adhesion promoter in the method.

[0104] Regarding the description of the manufacturing method 100 Figure 2a The stacking arrangement 10 shown, it should be noted that a plurality of such stacking arrangements 100 may also be arranged between the first and second tools 32, 34 of the clamping device 30 to perform Figure 2a Manufacturing method 100. It is only necessary to note that the compressible surface sealing element 16 or further intermediate layer used can be used as the corresponding counter substrate 34 to provide a flow stopping effect.

[0105] According to one embodiment, the channel structure 12-1 can be configured as at least one through-hole structure, at least one blind-hole structure or at least one 3D structure in the substrate 12, so that after executing the method 100, the conductive channel structure 12-2 in the substrate 12 is obtained in the form of a conductive through-hole structure, at least one conductive blind-hole structure or at least one conductive 3D structure in the substrate.

[0106] According to one embodiment, the (increased) process temperature T P It can be set to a value at least 5K, 10K or 20K higher than the melting temperature of the metal film 14 including the aluminum material. Therefore, the process temperature T P To ensure that the material of the metal film 14 melts safely with the lowest possible thermal stress on the components and structures involved. To this end, the first or second tool 32, 34 or both tools 32, 33 can be configured to heat the stack arrangement 10 to the required process temperature T P , that is, at the required processing temperature T P The tempering process is carried out below.

[0107] Therefore, in the melt filling of the channel structure 12-1 of the substrate 12 defined according to the method 100, the process temperature is at least 5K, 10K or 20K higher than the melting temperature of the metal of the metal film 14 selected for filling. For example, the process temperature is limited by the softening temperature of the substrate material. For example, if glass is used as the substrate material, its viscosity decreases (e.g., continuously decreases) as the temperature increases, wherein glass is an amorphous inorganic material. By using a supporting substrate material 13 (see Fig. 20 ), such as silicon, even a glass substrate 12 with a low melting point can be filled with aluminum or an aluminum alloy without bending or changing the structure of such glass substrate 12.

[0108] According to one embodiment, the metal film 14 may have an aluminum material as its main component, for example with a proportion of ≥ 80%, 90% or 95%, or even pure aluminum (= proportion 100%), whose final melting point is at least 420° C. or 520° C., or between 420° C. (or 520° C.) and 850° C. This means that the material of the metal film is a hard solder material, since the solder temperature is by definition above 420° C. or even above 520° C.

[0109] By means of the melting temperature and the "over" temperature above this temperature (process temperature = melting temperature + 5 / 10 / 20K), the wetting ability of the pure aluminum melt (without oxygen in the environment) in the pore structure 12-1 can be improved by reducing the surface tension of the molten metal 14-1 by about 5% (for example, the filling temperature is about 830°C), while the density and viscosity of the melt 14-1 are only slightly affected by this. In the case where an aluminum-copper alloy is used as the metal film 14, this effect is obvious and depends on the copper content. Since a higher alloying ratio (of copper) can increase the strength and usually also leads to a significant increase in the contact resistance, the metal material of the metal film is mainly composed of aluminum material, for example at least 80%, 90%, 95% or 99%. Although the density, surface tension and viscosity of pure aluminum are only slightly dependent on temperature, this has a significant effect on the viscosity of the aluminum-copper alloy.

[0110] The metal film 14 including the aluminum material (as the main component) can have a single-layer or multi-layer film structure. Therefore, the metal film 14 can have a single-layer aluminum material, an aluminum layer and a copper layer (or film) as a double-layer composite material, an aluminum layer, a copper layer and an aluminum layer as a three-layer composite material, etc., as long as the aluminum material is the main component of the multi-layer film structure (and is located on the substrate 12).

[0111] The glass material used for the substrate (glass substrate) 12 may be, for example, glass (Boroflot33 from Schott) or another glass such as Schott AF32, Corning Eagle XG, Hoya SD2.

[0112] According to one embodiment, the surface sealing element 16 may cover the metal film 14 and have a lateral protrusion (on the metal film 14) so ​​as to apply the mechanical process pressure F P and process temperature T P The metal film 14 is wrapped to the substrate 12 (airtight seal). According to one embodiment, the compressible surface sealing element 16 can be configured as a reusable high temperature seal.

[0113] According to a further embodiment, the surface sealing element 16 may include or consist of a graphite film having a thickness in the range of 0.3 mm to 1 mm or a thickness of about 0.5 mm.

[0114] In addition to graphite, other materials that do not adhere to the liquid aluminum material, such as other carbons, SiC or BN, may be considered as the material of the compressible surface sealing element 16. For example, fiber fabrics made of graphite, SiC and / or BN fibers (alone or in combination) may also be used.

[0115] Since the compressible high temperature surface seal (e.g. graphite film) 16 overlaps the edge (laterally) of the applied metal film (e.g. aluminum or aluminum alloy film), the molten metal (molten material 14-1 of the metal film 14) can be held above the substrate area (having the channel structure 12-1) of the substrate 12 to be filled and the mechanical process pressure F acting in the plane is applied. P and process temperature T P In the step, it is possible to avoid applying pressure F P By using the compressible surface sealing element 16 , a very high throughput can be achieved in the manufacturing method 100 .

[0116] The lateral protrusion of the surface seal on the metal film may depend, for example, on the thickness of the metal film and / or the thickness of the surface seal. For an aluminum film of thickness H, a seal 16 of thickness D may have an overlap (lateral projection) or width of the outer sealing area W of the following ratio: W>50xH / D mm, or 100xH / D mm>W>50xH / D mm.

[0117] In the context of the present description of the method 100, filling or a filling process refers to the introduction of molten metal 14-1 to completely or even partially fill a cavity or channel structure 12-1 in a substrate 12, such as a ceramic, glass or silicon substrate. Filling can also be understood as the inner wall lining of a cavity or channel structure 12-1 in the substrate 12 with a metal coating, or can also be understood as a depth-limited filling of the channel structure 12-1.

[0118] Substrate 12 is understood to be a body of material having two opposite parallel main surface areas (sides), where this is independent of the aspect ratio. The opposite sides of substrate 12 may but need not be arranged parallel to each other, or may also be arranged non-parallel to each other in certain areas.

[0119] In the context of this specification, the term channel, channel structure or cavity 12-1 refers to a recess having at least one open side (opening) leading to the outside of the substrate 12, regardless of the geometry of the recess 12-1, for example in the form of a transverse groove, a recess, a blind hole or a hole, or in the form of a channel of any geometric design having at least one opening leading to the surface of the substrate.

[0120] Although this specification often refers to aluminum fillers (based on metal films containing aluminum materials), the method of the present invention can also be applied to the filling of ultrapure aluminum or aluminum alloys. For example, alloys with a lower melting point relative to ultrapure aluminum can be used, in which one or more alloying elements from the fields of copper, silicon, germanium and / or magnesium can be used. In addition, alloys or aluminum alloys with improved electrical properties (e.g., resistance to electromigration) such as Al-Si or AlCu (each containing a few percent, for example 1 to 5%) can be used. This list of alloying elements is only an example and is not exhaustive.

[0121] It should be further noted that in the context of the present specification, the term film in "metal film, aluminum film, aluminum alloy film" 14 includes the use of a stacked single film, and also includes thin metal sheets or rolled plated plates, such as aluminum copper, etc., from which alloys are formed during the filling process and (at least partially) fill the channel structure or hole 12-1 of the substrate 12.

[0122] Typical thicknesses of metal films and sheets may range from 20 μm to 1000 μm, or between 20 μm and 50 μm, and (typically) are around 30 μm.

[0123] According to one embodiment, the metal film includes aluminum material as a main component, and its volume ratio is>60%,>80% or also>90%. In addition, through the manufacturing method 100 of the present invention, the conductive channel structure 12-2 in the substrate 12 can be filled with the metal filler 14-1 to a degree of 90%, or between 95% and 98%, or even up to 100%, that is, the channel structure 12-2 is completely filled (i.e., at least 90% or 98%) without pores or inclusions.

[0124] According to one embodiment, for example, a temperature-resistant temporary carrier substrate 13 (see, for example Fig.18 ), such as silicon wafers, can be used for pure aluminum melt filling of channel structures 12-1 in low melting point glass substrates 12 such as Schott BF33. These carrier substrates 13 can in turn be provided with suction hole channels aligned with the holes in the glass substrate. Alignment can be achieved by placement, passive alignment aids (such as pins, balls) or previously performed anodic bonding. The carrier substrate can be discarded after filling, or can be provided with a non-stick coating for reuse.

[0125] According to one embodiment, in the manufacturing method 100, a low melting point aluminum-copper alloy may also be used for filling. The alloy may be introduced as a pre-alloyed film, or may be achieved by forming (at least) one aluminum film and (at least) one copper film in situ and forming an aluminum-copper eutectic during the heating stage of the punch 32. The process temperature may be reduced by about 100K (compared to pure aluminum), which enables filling of a low melting point substrate 12, such as a glass substrate, without deformation.

[0126] For example, the method 100 may be performed in a process chamber having a predetermined (eg, inert) process environment and a predetermined atmospheric process pressure.

[0127] Figure 2b An exemplary principle flow chart of the method 100 of the present invention for producing a conductive channel structure 12 - 2 in a substrate 12 is shown, wherein, for example, a closed loop seal is used as the compressible sealing element 16 .

[0128] Below Figure 2b In a further embodiment of the flowchart of the manufacturing method 100 shown in FIG. 1 , the method is performed again. Figure 1 and 2a The method steps shown, additions and changes (differences) compared to the above-mentioned manufacturing method 100 are as follows. In addition to the shape of the compressible sealing element 16 being a closed ring seal, Figure 1 and 2a The above explanation of the manufacturing method 100 also applies to Figure 2b The manufacturing method 100. This also applies to (especially) the material, process flow, process parameters of the compressible sealing element 16, all other elements and their characteristics, etc.

[0129] according to Figure 2b In an embodiment of the present invention, the compressible sealing element 16 has, for example, a closed ring seal. In addition, the compressible sealing element 16 can be configured to be used in high temperature applications (as a compressible high temperature sealing element) at process temperatures.

[0130] therefore, Figure 2b Shown is a reference Figure 1 A possible implementation of the various method steps of the flowchart of the manufacturing method 100 is shown. The arrangement obtained in the manufacturing method 100, i.e. the substrate with the electrically conductive channel structures or vias, can then be used, for example, as a so-called interposer arrangement 50 for electronic components, such as rewiring interposers, electrically conductive vias, (passive) electrical components or for heat dissipation, etc.

[0131] refer to Figure 2b In the method 100, in step 120, a stacking arrangement 10 is provided in a clamping device 30 (clamping arrangement), wherein the stacking arrangement 10 includes a substrate 12 provided with a channel structure 12-1, a metal film 14 including an aluminum material or an aluminum material alloy on the substrate 12, and a compressible ring seal 16 surrounding an edge area of ​​the metal film and laterally enclosing the metal film under pressure.

[0132] according to Figure 2b In one embodiment of the manufacturing method 100 shown, the clamping device 30 may have a first and a second tool 32 , 34 , wherein the stack arrangement 10 is arranged or clamped (flush) between the first and second tool 32 , 34 of the stack arrangement 30 .

[0133] In a (subsequent) step 140 , a planarly acting mechanical process pressure F is applied to the stack arrangement 10 by means of (via) the clamping device 30 . P and process temperature T P , so that at the process temperature T P The metal film 14 containing aluminum material is melted (liquefied) and the mechanical process pressure F acting on the plane is applied. P This is introduced into the channel structure 12 - 1 as metal filling material 14 - 1 .

[0134] For example, in step 140, the liquefied material 14-1 of the metal film 14 is enclosed between a first tool (e.g., a stamping punch) of a clamping device and a substrate provided with a channel structure, wherein a compressible ring sealing element (=closed ring seal) surrounds (encloses) the edge area of ​​the metal film, so that when pressure is applied, the ring sealing element laterally (between the substrate and the first tool) surrounds (hermetically seals or tightly surrounds) the metal film. This can prevent the liquefied / molten material of the metal film from leaking (escaping) laterally through the surrounding annular sealing element.

[0135] The annular sealing member 16 may have, for example, an inner peripheral shape (annular) adapted to the outer peripheral shape of the metal film 14. The inner peripheral shape of the annular sealing member 16 may have, for example, a configuration flush with or consistent with the outer region (outer peripheral shape) of the metal film 14.

[0136] In a subsequent step 160 , the stack arrangement 10 is cooled to resolidify (solidify) the introduced metallic (molten) filling material 14 - 1 to obtain a conductive channel structure 12 - 2 filled with the (solidified) metallic filling material 14 - 1 .

[0137] Therefore, in Figure 2b In the illustrated exemplary manufacturing method 100, aluminum pressure melt filling of the channel structure 12-1 is performed in the substrate 12. Here, the (second) tool 34 of the clamping device 30 arranged on the substrate 12 serves as, for example, a counter substrate to obtain a flow stop (or flow stop function) during the melt filling process, wherein the compressible high-temperature seal 16 is provided as a lateral boundary or shell to allow the liquefied (molten) material 14-1 of the metal film 14 to leak or escape laterally on the side of the substrate 12 adjacent to the first tool 32 of the clamping device 30.

[0138] According to one embodiment, a mechanical pressure F is applied 140 between the first and second tools 32 , 34 of the clamping device 30 . P The step can be performed with a pressure greater than 10 N / cm 2 or at 10N / cm 2 and 600N / cm 2The contact pressure (between the first and second tools 32 , 34 ) is performed at a contact pressure in the range between .

[0139] According to one embodiment, the first or second tool 32, 34 or both tools 32, 33 of the clamping device 30 may be configured to heat the (clamped) stack arrangement 10 to an (increased) process temperature T P This process may also be referred to as tempering. In the context of this specification, tempering (application of process temperature) is understood to mean a temperature treatment, such as time-controlled uniform heating of the stack arrangement, such as application of a planar mechanical pressure F between the first and second tools 32, 34 of the clamping device 30. P The temperature treatment is applied simultaneously.

[0140] For example, a process temperature T is applied to the stack arrangement 10 P Step 140 may be performed with a predetermined temperature profile (or temperature ramp). For example, a process temperature T is applied 140 to the stack arrangement 10. P (The peak temperature) may last for 1 to 30 seconds (eg, 3 to 15 seconds or 3 to 5 seconds) (depending on the material of the metal film 14).

[0141] The stack arrangement 10 is heated and a process temperature T of 140° is applied to the stack arrangement 10. P (Peak temperature) can be performed, for example, independently of alloying, provided this has been present. The production of the AlCu melt can be performed during the heating process and does not lead to a significant extension of the process. The extension time can be in the range of 15 to 20 seconds.

[0142] like Figure 2b As shown in the example of step 120, the stacking arrangement 10 is arranged in the vertical direction ( Figure 2b In the figure, from top to bottom, there is a metal film 14 and a substrate 12, the metal film 14 has a laterally surrounding annular sealing element 16 (high temperature seal), and the substrate 12 is provided with one or more channel structures 12-1, such as perforated glass quartz, sapphire ceramics or semiconductor substrates (wafers). Figure 2b In one embodiment of the manufacturing method 100 shown, the first tool 32 is configured as, for example, a stamping punch, and the second tool 34 of the clamping device 30 is configured as a (e.g., coated) opposing substrate, wherein the second tool 34 also effectively serves as a flow stopper for the liquefied material 14-1 of the metal film 14 during the filling process.

[0143] about Figure 2b The process flow 100 shown further points out that the order of the stacking arrangement 10 between the first and second tools 32, 34 of the clamping device 30 can also be reversed (inverted) without (significantly) changing or impairing the process result, since gravity effects have (essentially) no influence on the filling process.

[0144] By applying a mechanical process pressure F P and elevated process temperature T P (Tempering process), the material of the metal film 14 including the aluminum material is liquefied (melted), and the channel structure 12-1 of the substrate 12 is pressure-filled. In this case, during the compression process of the compressible annular sealing element 16 (during the planar action of applying mechanical pressure), the metal film 14 is laterally surrounded or enclosed by the directional sealing element 16. Due to the flow blocking effect of the counter substrate or the surface 34-1 of the counter substrate 34, the filling process in step 140 is carried out until the surface 34-1 of the second tool 34 used as the clamping device 30 of the counter substrate.

[0145] According to one embodiment, the main surface area 34 - 1 of the second tool 34 (opposite to the substrate) facing the substrate 12 may have a central roughness value R a Or average roughness depth R Z Surface roughness between 0.5 μm and 10 μm or about 3 μm. This surface quality (roughness) of the main surface area 34-1 of the second tool 34 facing the substrate 12 prevents the molten metal (molten aluminum) from adhering to this main surface area 34-1 of the second tool during pressure filling and also prevents the molten metal (molten aluminum) from adhering to the main surface area 34-1 of the second tool at the process temperature T P A hot substrate 12 (eg, a glass substrate) is adhered to the main surface area 34 - 1 of the second tool 34 .

[0146] According to one embodiment, the main surface area 34-1 of the second tool 34 facing the substrate 12 may have a coating 36 to provide such surface roughness of the main surface area 34-1 of the second tool 34 facing the substrate 12. Therefore, the surface roughness of the main surface area 34-1 of the second tool 34 facing the substrate 12 may be obtained, for example, by the coating 36, wherein the coating 36 may include or consist of a boron nitride material. Boron nitride (BN) does not react with the liquefied material (aluminum material) 14-1 of the metal film 14 because boron nitride has oxidation resistance at temperatures up to about 800° C. and does not have / occur a reaction with glass or metal. In addition, BN does not adhere to glass, and hot glass blocks do not adhere to BN.

[0147] In addition, the boron nitride material can provide the desired surface roughness of the second tool 34, which can further allow air / gas to escape laterally from the channel structure 12-1 of the substrate 12 during the filling process, while the surface quality has or provides the desired flow-blocking effect for the molten metal 14-1 on the surface 34-1 of the opposing substrate 34 (second tool).

[0148] As in the manufacturing method 100 Figure 2bAs further illustrated in the method 100, the first tool 32 (stamping punch) may further include a non-stick coating 38 on its main surface area 32-1 (facing the substrate 12), which allows for simplified disassembly (removal) of the first tool 32 from the stacking arrangement 10 (i.e., from the compressible sealing element 16) after the filling and cooling operations 140, 160 of the method 100. For example, the non-stick coating 36 may be disposed on (or form) the main surface area 32-1 of the first tool 32 facing the stacking arrangement 10.

[0149] Thus, according to one embodiment, the coating 36 of the second tool 34 may include a boron nitride material, wherein the surface roughness of the main surface area of ​​the second tool 34 adjacent to the substrate 12 is selected to serve as an effective flow barrier for the molten metal and to allow lateral escape of the gas present in the channel structure 12-1 of the substrate 12. Thus, the flow front of the molten material 14-1 of the metal film 14 may hit the plate 34 (second tool 34) located below the substrate 12 and having a rough boron nitride coating. The flow front pushes the gas in the channel downward and stops flat on the substrate 12. The gap configured by the roughness of the coating is very narrow, so that the flow front may not move laterally between the substrate 12 (e.g., a glass substrate) and the second tool (counter substrate) 34. Using this process, a protective gas environment is helpful / possible, but not absolutely necessary. This can provide sufficient control of the flow front.

[0150] According to one embodiment, the substrate 12 may, for example, include a dielectric material such as glass, quartz, sapphire, ceramic, etc., or a semiconductor material such as silicon (polycrystalline silicon). If silicon (polycrystalline silicon) is used for the substrate 12, it may be necessary to provide additional barrier layers and insulating layers, such as SiO2, to prevent possible reactions of the hot liquid aluminum material with the silicon.

[0151] For example, step 160 of cooling the stack arrangement 10 can be performed, for example, with a predetermined temperature profile (or temperature ramp, such as a step of applying a process temperature), ensuring that cooling of the components and structures involved is as gradual as possible over the material, for example due to different thermal expansion coefficients.

[0152] The cooling process 160 may be performed, for example, with an (average) temperature change (cooling) of 20 to 500 K (or 30 to 400 K or 300 to 400 K) per minute (until a normal temperature (e.g., a removal temperature of the filling substrate 12, e.g., in a range between ambient temperature and about 200° C.) is reached). The time required for the cooling process may depend on, for example, the structure of the clamping device 30 and, for example, the structure of the punch unit 32.

[0153] After step 160 of cooling the stack arrangement 10 and the clamping device 30, the mechanical process pressure F acting on the plane has been released. PAfterwards, the stack arrangement 10 is removed from the clamping device 30, so that the annular sealing element 16 can also be removed from the substrate 12. After removing the substrate (e.g. glass substrate) 12, which is provided with, for example, an aluminum feedthrough (e.g. aluminum TGV) 12-2 and a loose seal (annular sealing element) 16, the substrate 12, which is provided with, for example, a conductive channel structure 12-2, can be fed to one or more further processing steps.

[0154] Therefore, the method 100 may further (optionally) remove excess metal fill material 14 - 2 from one side of one major surface region or both sides of opposing major surface regions of the substrate 12 , for example, using a chemical mechanical polishing (CMP) process.

[0155] In addition, in method 100, metallization can (optionally) be performed on one or both sides of the substrate 12 using a thin film deposition process to obtain, through a photolithography patterning process and a subsequent etching step, a metallization structure electrically connected to the conductive channel architecture 12-2, for example, on one or two main surface areas of the substrate 12 configured with the conductive channel structure 12-2.

[0156] Therefore, the method 100 of the present invention for manufacturing a conductive channel structure 12-2 in a substrate 12 can be used to obtain an arrangement, for example, of an inserter 50, which includes a channel structure 12-2 completely filled with metal in a substrate 12 (e.g., a flat substrate), wherein, for example, a metal film adhesion promoter coating, for example, is not required or used in the method to obtain a chemical bonding area (interface) between the metal filler 14-1 of the channel structure 12-2 and the channel wall.

[0157] Regarding the description of the manufacturing method 100 Figure 2b The stacking arrangement 10 shown, it should be noted that in order to perform Figure 2b According to the manufacturing method 100, a plurality of such stacking arrangements 100 may also be arranged between the first and second tools 32, 34 of the clamping device 30. It is only noted that a further intermediate layer may be used as the respective counter substrate 34 to provide a flow-stopping effect.

[0158] According to one embodiment, the channel structure 12-1 can be configured as at least one through-hole structure, at least one blind-hole structure or at least one 3D structure in the substrate 12, so that after executing the method 100, the conductive channel structure 12-2 in the substrate 12 is obtained in the form of a conductive through-hole structure, at least one conductive blind-hole structure or at least one conductive 3D structure in the substrate.

[0159] According to one embodiment, the (increased) process temperature T P It can be set to a value at least 5K, 10K or 20K higher than the melting temperature of the metal film 14 including the aluminum material. Therefore, the process temperature TP To ensure that the material of the metal film 14 melts safely with the lowest possible thermal stress on the components and structures involved. To this end, the first or second tool 32, 34 or both tools 32, 33 can be configured to heat the stack arrangement 10 to the required process temperature T P , that is, at the required process temperature T P The tempering process is carried out below.

[0160] Therefore, in the melt filling of the channel structure 12-1 of the substrate 12 defined according to the method 100, the process temperature is at least 5K, 10K or 20K higher than the melting temperature of the metal film 14 selected for filling. For example, the process temperature is limited by the softening temperature of the substrate material. For example, if glass is used as the substrate material, its viscosity decreases (e.g., continuously decreases) as the temperature increases, wherein glass is an amorphous inorganic material. By using a supporting substrate material 13 (see Fig. 20 ), such as silicon, even a glass substrate 12 with a low melting point can be filled with aluminum or an aluminum alloy without bending or changing the structure of such glass substrate 12.

[0161] According to one embodiment, the metal film 14 may have an aluminum material as its main component, for example with a proportion of ≥ 80%, 90% or 95%, or even pure aluminum (= proportion 100%), whose final melting point is at least 420° C. or 520° C., or between 420° C. (or 520° C.) and 850° C. This means that the material of the metal film is a hard solder material, since by definition the solder temperature is above 420° C. or even above 520° C.

[0162] By means of the melting temperature and the "over" temperature above this temperature (process temperature = melting temperature + 5 / 10 / 20K), the wetting ability of the pure aluminum melt (without oxygen in the environment) in the pore structure 12-1 can be improved by reducing the surface tension of the molten metal 14-1 by about 5% (for example, a filling temperature of about 830°C), while the density and viscosity of the melt 14-1 are little affected by this. In the case where an aluminum-copper alloy is used as the metal film 14, this effect is obvious and depends on the copper content. Since a higher alloying ratio (copper) may increase rigidity and usually also lead to a significant increase in contact resistance, the metal material of the metal film is mainly composed of aluminum material, for example at least 80%, 90%, 95% or 99%. Although the density, surface tension and viscosity of pure aluminum are only slightly dependent on temperature, this has a significant effect on the viscosity of the aluminum-copper alloy.

[0163] The metal film 14 including aluminum material (as the main component) can have a single-layer or multi-layer film structure. Therefore, as long as the aluminum material is the main component of the multi-layer film structure (and is located on the substrate 12), the metal film 14 can have a single-layer aluminum material, or a double-layer composite structure including an aluminum layer and a copper layer (or film), or a three-layer composite structure including an aluminum layer, a copper layer, and an aluminum layer again, etc., as long as the aluminum material is the main component of the multi-layer film structure (and is located on the substrate 12).

[0164] The glass material used for the substrate (glass substrate) 12 may be, for example, glass (Boroflot33 from Schott) or another glass such as Schott AF32, Corning Eagle XG, Hoya SD2.

[0165] According to one embodiment, the annular sealing element 16 may laterally surround (surround) the metal membrane 14 or the edge region so that when the mechanical process pressure F P and process temperature T P The compressible sealing element 16 can be configured as a reusable high temperature seal.

[0166] According to a further embodiment, the annular sealing element 16 may comprise or consist of a structured film, such as a structured graphite film, with a thickness (vertical height) in the range of 0.3 mm to 1 mm or about 0.5 mm. The (lateral) width B of the annular sealing element may be in the range of 0.5 mm to 20 mm or 2 to 5 mm.

[0167] In addition to graphite, other materials that do not adhere to the liquid aluminum material, such as other carbons, SiC or BN, may be considered as the material of the compressible surface sealing element 16. For example, a fiber fabric made of graphite, SiC and / or BN fibers (alone or in combination) may also be used.

[0168] Due to the presence of a compressible high temperature annular seal (e.g., a structured graphite film) 16 laterally around the applied metal film (e.g., an aluminum or aluminum alloy film), the molten metal (molten material 14-1 of the metal film 14) can be held above the substrate region to be filled (having the channel structure 12-1) of the substrate 12 and the mechanical process pressure F acting in a planar manner is applied. P and process temperature T P In the step, pressurization F can be avoided P By using the compressible ring sealing element 16, a very high throughput can be achieved in the manufacturing process 100.

[0169] In the context of the present description of the method 100, filling or a filling process refers to the introduction of molten metal 14-1 to completely or even partially fill a cavity or channel structure 12-1 in a substrate 12, such as a ceramic, glass or silicon substrate. Filling may also be understood as the inner wall lining of a cavity or channel structure 12-1 in the substrate 12 with a metal coating, or may also be understood as a filling limited by the depth of the channel structure 12-1.

[0170] Substrate 12 is understood to be a body of material having two opposite parallel main surface areas (sides), where this is independent of the aspect ratio. The opposite sides of substrate 12 may but need not be arranged parallel to each other, or may also be arranged non-parallel to each other in certain areas.

[0171] In the context of this specification, the term channel, channel structure or cavity 12-1 refers to a recess having at least one open side (opening) leading to the outside of the substrate 12, regardless of the geometry of the recess 12-1, for example in the form of a transverse groove, a recess, a blind hole or a perforation, or in the form of a channel of any geometric design having at least one opening leading to the surface of the substrate.

[0172] Although this specification often refers to aluminum fillers (based on metal films containing aluminum materials), the method of the present invention can also be applied to filling ultrapure aluminum or aluminum alloys. For example, alloys with a lower melting point relative to ultrapure aluminum can be used, in which one or more alloying elements from the fields of copper, silicon, germanium and / or magnesium can be used. In addition, alloys or Al alloys with improved electrical properties (e.g., resistance to electromigration) such as Al-Si or AlCu (each containing a few percent, such as 1 to 5%) can be used. This list of alloying elements is only exemplary and not exhaustive.

[0173] It should also be noted that in the context of this specification, the term film in "metal film, aluminum film, aluminum alloy film" 14 includes the use of a stacked single film, and also includes the use of a thin metal sheet or rolled plate, such as aluminum copper, from which an alloy is formed during the filling process and (at least partially) fills the channel structure or perforation 12-1 of the substrate 12. Typical thicknesses of metal films and metal plates may be in the range of 20 μm to 1000 μm, or between 20 μm-50 μm, and (usually) about 30 μm.

[0174] According to one embodiment, the metal film has a volume fraction of >60%, >80% or even >90% aluminum material as a main component. In addition, through the manufacturing method 100 of the present invention, the conductive channel structure 12-2 in the substrate 12 can be filled with the metal filler 14-1 to a degree of 90%, or between 95% and 98%, or even up to 100%, that is, the channel structure 12-2 is completely filled (i.e., at least 90% or 98%) without pores or inclusions.

[0175] According to one embodiment, for example, a temperature-resistant temporary carrier substrate 13 (see Fig.18 ), such as silicon wafers, can be used for pure aluminum melt filling of channel structures 12-1 in low melting point glass substrates 12 such as Schott BF33. These carrier substrates 13 can in turn be equipped with suction hole channels aligned with the holes in the glass substrate. Alignment can be achieved by placement, passive alignment aids (such as pins, balls) or anodic bonding performed before filling. The carrier substrate can be discarded after filling or can be provided with a non-stick coating for reuse.

[0176] According to one embodiment, in the manufacturing method 100, the filling may also be configured with a low melting point aluminum-copper alloy. The alloy may be introduced as a pre-alloyed film, or may be formed in situ from (at least) an aluminum film and (at least) a copper film by forming an aluminum-copper eutectic during the heating phase of the stamping punch 32. As a result, the process temperature may be reduced by about 100K (compared to pure aluminum), which enables filling of a low melting point substrate 12, such as a glass substrate, without deformation.

[0177] For example, the method 100 may be performed in a process chamber having a predetermined (eg, inert) process environment and a predetermined atmospheric process pressure.

[0178] Combination Figure 2a Description of the surface sealing element and the combination Figure 2b The annular sealing element described can be easily provided and / or used as an independent structure. However, embodiments of the present invention provide two structures, namely a surface sealing element and an annular sealing element, which can be used together. Independent or separate structures can be used in combination. Alternatively, the surface sealing element and the annular sealing element can be firmly connected to each other, for example, by a bonding process or a bonding process, and this connection structure can be used. As a further advantageous alternative, it is intended to provide and / or directly use the surface sealing element and the annular sealing element together as a single piece or an integral component.

[0179] Figure 3a Shown by Figure 1 Or an exemplary Al-TGV (aluminum through glass via) produced by the manufacturing method of FIG. 2 in a substrate 12 (eg, in glass or quartz glass). Figure 3b Shown by Figure 1 2 is an exemplary detailed view of an interface connection 11 between a conductive Al filler 12 - 2 (Al-TGV) and a glass 12 (eg, borosilicate glass) produced by a manufacturing method 100 for high pressure melt filling.

[0180] like Figure 3aAs can be seen in FIG. 1 , aluminum acts as an adhesion promoter between itself and the glass, quartz, ceramic or sapphire substrate 12. Since an additional adhesion promoter layer can be omitted, according to the manufacturing method of the present invention, Al through holes can not only be produced more easily, but also can be filled with real 3D structures, such as Figure 9b shown.

[0181] In this context, it should be noted that aluminum acts as an adhesion promoter between itself and glass, quartz, ceramic or sapphire substrates, e.g. Figure 3b As shown. Bonding to silicon substrates and silicon oxide substrates is also possible. Therefore, providing an additional adhesion promoter layer can be omitted or no longer necessary, which not only makes it easier to produce aluminum through-holes compared to conventional manufacturing methods, but also makes it possible to fill real 3D structures.

[0182] The sidewall wetting or the connection with the sidewall can be optionally improved by a dielectric coating. Conformal deposition ALD (atomic layer deposition) technology or LP-CVD (low pressure chemical vapor deposition) technology is particularly suitable for this purpose. Dielectric layer materials suitable for this purpose can be, for example, aluminum nitride (AlN), aluminum oxide (Al2O3), silicon nitride (SiN), titanium nitride (TiN), etc., for example, with a thickness in the range of 5 to 100 nm or 30 to 50 nm.

[0183] These dielectric layer materials can improve the filling of the openings and allow filling at lower pressures. These layers can also act as additional barrier layers and can help avoid unwanted reactions between the glass and the metallization. The focus here is not (necessarily) on the aluminum material, but (especially) on additives (alloys) such as copper. Copper, for example, can release monovalent ions that can diffuse into the glass, for example, thereby impairing the insulating properties or transparency of the glass.

[0184] Thus, the aluminum wettability of the channel structure can be advantageously influenced by pre-coating with SiN, AlN, TiN, etc. by means of an LP-CVD or ALD process. The layer thickness is in the range of 5 nm to 100 nm, or (preferably) in the range of 30 to 50 nm. The (conformal) pre-coating can be used to fill smaller via diameters (in the range of 5 to 15 μm) at the same process temperature and pressurization, or in the case of larger via diameters, in particular to reduce the necessary pressurization.

[0185] Figure 4a -b shows the example of Figure 1 Or an example of Al-Cu melt filling 14-1 in a channel structure 12-2 in a substrate 12 (e.g., a quartz substrate) produced by the manufacturing method 100 of FIG. 2. For example, in Figure 4aIn the example of Al-Cu melt filling 14-1 in the quartz substrate 12 shown in Figure 1-b, an Al-Cu rolled plate is used. The aluminum material forms an adhesive coating of the substrate 12, while the copper phase is present in the bulk. When the aluminum layer melts by reacting with the copper layer, the alloy is fully formed. The aluminum side of the rolled plate 14 is placed on the substrate 12, facing the (glass) substrate 12.

[0186] According to one embodiment, ultrapure aluminum (4N, 5N or 6N) can be considered for applications (e.g., low-temperature compatible arrangements of microelectronic components for quantum computing applications, e.g., at temperatures below 10 K) that aim to achieve particularly low contact resistances of conductive vias 12-2 through substrate 12. By additionally tempering the substrate 12 (e.g., a glass substrate) with the TGVs 12-2, the electronic noise when crossing grain boundaries can be reduced. Efforts should be made to achieve the coarsest possible grain structure in the TGVs 12-2, the grain diameters should be in the range of the channel diameters of the channel structure 12-1 or larger, in order to achieve the lowest possible contact resistance and low electronic noise. This tempering (additional tempering), for example, is carried out in an oven in a temperature range of 250° C. to 500° C. Further improvements in the electrical properties of the already produced TGVs can be achieved by directional solidification of the microstructure, wherein a columnar grain structure (of the TGVs 12-2) can be produced. In this context, for example, reference is made to Figure 5a -c, which shows an exemplary process.

[0187] exist Figure 5a In the exemplary process shown in FIG. 1-c, the channel structure 12-1 in the substrate 12 is first filled with aluminum (according to method 100). Figure 5b As shown, Al recrystallization is performed during further tempering to obtain (fill) directional solidification of the Al structure 14-1 in the through hole 12-2. Figure 5c As shown, the substrate may be thinned to highlight the columnar (columnar) grain structure in the via 12-2, and then, for example, the contact pad may be metallized 12-3 and passivated 12-4. Thus, the concept of recrystallization by applying a temperature gradient to produce a columnar grain structure of the TGV produced by the method 100 may be obtained.

[0188] refer to Figure 5d , a further exemplary process for obtaining improved electrical properties of the through-via (Al-TGV) 12 - 2 according to a further embodiment is exemplarily explained.

[0189] According to one embodiment, for example, by using ultra-pure aluminum (4N, 5N or 6N), a particularly low contact resistance of the conductive via 12-2 through the substrate 12 can be obtained. Figure 5dAs shown, single-crystal (monocrystalline) via filling 14-1 can be achieved (in situ). However, there are different orientations in via 12-2, that is, there are no grain boundaries in the metal material of via 12-2. Therefore, the use of single-crystal via 12-2 can basically avoid or at least greatly reduce the electron noise that occurs when passing through grain boundaries.

[0190] This single-crystal via filling 14-1 of via 12-2 can be achieved, for example, by using high-purity aluminum (Al content > 98%) or ultra-pure aluminum (Al composition = 100%) in a pressure filling method 100. In addition, a process temperature T P (peak temperature) is applied to the stack arrangement 10, for example, and may last for a relatively long time of 5 to 40 seconds or 10 to 30 seconds. Further, the cooling process 160 can be carried out, for example, with a relatively low (average) temperature change (cooling) of 20 to 300 K (or 30 to 200 K) per minute (until reaching a normal temperature of, for example, 290 K to 300 K) (Ostwald ripening).

[0191] The manufacturing method 100 of the present invention for manufacturing the conductive channel structure 12-2 in the substrate 12 opens up many new application possibilities, which are not (completely) limited to the fields of high-frequency technology or quantum technology so far.

[0192] Compared with the previous methods in microtechnology for implementing 2.5-D technology (depth-expanded 2D structures), new possibilities for manufacturing 3D-formed microstructures or channel structures become possible by the method of the present invention, for example, using the SLE (selective laser-induced etching) process.

[0193] The manufacturing method 100 of the present invention for manufacturing the conductive channel structure 12-2 in the substrate 12 based on the aluminum melt filling of the hole and blind hole structures 12-1 in the substrate 12 (such as glass and silicon oxide substrates) 12 is not (completely) limited to a specific processing method for manufacturing hole structures. For example, a structuring method with a very high aspect ratio in the substrate 12 (such as a glass substrate) is of particular interest for microelectronic applications, especially when the thermal mechanical expansion coefficient is largely applicable to silicon. The term glass substrate should be understood here to refer to technical glasses and infrared transparent ceramics with a low thermal expansion coefficient of 0 ppm / K < CTE < 6 ppm / K (CTE = coefficient of thermal expansion) (for example, in the wavelength range of about 1 μm for laser-induced etching) (such as sapphire, AlN, Si3N4, SiC, glass ceramics), to synthetically produced fused silica (fused quartz), the expansion coefficient of which is (about) ~0.1 ppm / K. Ceramic substrates can be provided with holes, for example, which can also be filled according to the described process.

[0194] The filled hole structure 12-1 can also be in silicon (in the silicon substrate 12) with and without surface oxidation, for example, for creating electrical feedthroughs and heat dissipation vias. In silicon, a barrier layer can separate silicon and thermal Al. The barrier layer can be or include SiO2, wherein a deposited layer, such as Si3N4, is also suitable for this purpose.

[0195] The substrate 12 (e.g. glass, silicon substrate etc.) is used, for example, in the form of a wafer with plane-parallel top and bottom sides. However, (glass) planar substrates with other dimensions can also be used, for example, to produce metamaterials with specifically tuned reflection or transmission properties for high-frequency electromagnetic radiation (5G, 6G, radar, THz). Metamaterials are artificially manufactured materials with optical, electrical or magnetic properties that do not exist in nature.

[0196] For example, possible methods for high detail resolution for hole production rely on laser exposure (typically fs to ns pulse duration) to locally increase the glass etching rate and subsequent etching in KOH, NaOH solution or hydrofluoric acid (HF). Other wet chemical etching processes are also conceivable. Due to the different chemical composition of the glass, different laser processing methods and etching properties are also different, and thus different hole geometries will be generated, especially when taking into account the freedom of double-sided or single-sided etching. The formation of the channel structure 12-1 and the wall angles depends on the substrate material, such as the glass material, the laser focus resolution, the exposure strategy and the etching chemistry used and the etching duration.

[0197] Figure 6a -i shows the Figure 1 2 or 2. Exemplary geometries of channel structures having different sizes and wall angles filled by the manufacturing method 100 of the present invention.

[0198] For example, Figure 6a As shown, the quartz substrate 12 is etched by LIDE (laser induced deep etching) on ​​both sides using a patterned additional protective mask to obtain a continuous through hole geometry 12-1 and a blind hole geometry 12-1. The protective mask has opposite openings on both sides to obtain a continuous hole geometry and has openings only on one side to obtain a blind hole geometry of the channel structure 12-1.

[0199] Figure 6b An example of a substrate 12 is shown, such as a quartz substrate etched on one side using LIDE, for example, to obtain a channel structure 12 - 1 with a blind hole geometry.

[0200] like Figure 6c As shown, a substrate 12 (eg, a quartz substrate) may be etched on one side using LIDE to obtain a continuous hole geometry of a channel structure 12-1.

[0201] like Figure 6d As shown, a substrate 12 (eg, a quartz substrate) may be etched on both sides using LIDE to obtain a continuous hole geometry of a channel structure 12-1.

[0202] like Figure 6e As shown, for example, the substrate 12 (eg, a quartz substrate) can be etched on both sides by SLE (Selective Laser Induced Etching) to obtain different hole geometries (blind hole depths) of the channel structure 12 - 1 .

[0203] like Figure 6f As shown, as an example, the substrate 12 (eg, a quartz substrate) can be etched on both sides by SLE to obtain different pore geometries (apertures) of the channel structure 12-1. In addition, for example, a flow barrier of the liquefied metal material 14-1 is generated by a narrowed pore geometry (constriction) 23.

[0204] For example, Figure 6g A substrate 12, for example a quartz substrate, is shown, which has been etched on both sides by SLE to obtain different hole geometries, i.e. different pore sizes of the channel structure 12-1 at different substrate depths. In addition, a flow barrier of the liquefied metal material 14-1 is generated, for example, by a narrowed hole geometry (constriction) 23.

[0205] Figure 6h A substrate 12 is shown, for example a glass substrate (eg SCHOTT AfF2 eco), into which the hole geometry of a channel structure 12 - 1 has been etched on one side using LIDE.

[0206] Figure 6e A substrate 12 is shown, for example a glass substrate 12 (eg Schott Af32-eco), in which the hole geometry of the channel structure 12-1 is etched on both sides using LIDE (continuous hole geometry). In addition, a flow barrier of the liquefied metal material 14-1 is generated, for example, by a narrowed hole geometry (constriction) 23.

[0207] In conclusion, it can therefore be noted that Figure 6a The substrate 12 shown in FIG. 1 has different pore geometries and side angles of the channel structure 12 - 1 .

[0208] Figure 7 Shown for Figure 1 Or FIG. 2 is a schematic representation of a further possible topology of a substrate 12 for the manufacturing method of the present invention.

[0209] For example, during the etching of the substrate 12, a structured protective mask (e.g., structured by photolithography) can also be used on one or both sides to obtain a channel structure 12-1, which limits or prevents etching attacks on certain substrate areas and allows / enables etching of other areas. This can be used, for example, to create raised areas on the substrate 12, or to create some areas only after other areas, such as deep etching downstream in the manufacturing process after further processing of the wafer.

[0210] The surface area 12-A of the substrate 12 is, for example, not etched. The surface area 12-B of the substrate 12 has, for example, an etched surface without laser exposure. The surface area 12-C of the substrate 12 has, for example, etched grooves. The surface area 12-B of the substrate 12 has, for example, circumferential frame protrusions.

[0211] 8-12 depict exemplary implementations of an interposer arrangement 50 or a portion of an interposer arrangement 50 according to further embodiments.

[0212] The interposer arrangement 50 includes a substrate 12 having an electrically conductive and / or thermally conductive channel structure 12 - 2 extending at least partially through the substrate 12 , wherein the channel structure 12 - 2 includes an aluminum material or an aluminum material alloy, and wherein the electrically conductive and / or thermally conductive channel structure 12 - 2 extends from a major surface area of ​​the substrate 12 into the substrate 12 .

[0213] The aluminum material or aluminum material alloy has at least 80% or 90% aluminum as a main component so that its melting point is at least 420° C. (or 520° C.), or between 420° C. and 850° C., as a brazing hard solder.

[0214] According to one embodiment of the inserter arrangement 50 (see Figure 8a -d), the conductive channel structure 12 - 2 extends from one major surface area of ​​the substrate 12 into the substrate 12 and extends to the opposite major surface area of ​​the substrate 12 .

[0215] According to one embodiment of the inserter arrangement 50 (see Figure 8b and d), the conductive path structure 12-2 does not extend in a direction perpendicular to two opposite main surface areas of the substrate at least in some portions.

[0216] According to one embodiment of the inserter arrangement 50 (see Figure 8a -c and e), the conductive channel structure 12 - 2 extends vertically to two opposite main surface areas of the substrate 12 .

[0217] According to one embodiment of the inserter arrangement 50 (see Figure 8a-e), an electrically and / or thermally conductive channel structure 12 - 2 is configured as at least one thermal connection made of aluminum for dissipating heat through the substrate 12 (between the first and second opposing main surface areas).

[0218] According to one embodiment of the inserter arrangement 50 (see Figure 8a -e), the conductive channel structure 12 - 2 is configured to pass through at least one electrical via of the substrate 12 and / or at least one passive element in the substrate 12 .

[0219] According to one embodiment of the inserter arrangement 50 (see Figure 8a -e), the aspect ratio of at least one through hole 12 - 2 passing through the substrate 12 is 50:1 (aspect ratio of length to diameter).

[0220] An interposer or interposer arrangement 50 refers to an electrical interface that guides, for example, a socket or a connection layer to another connection layer. Thus, the purpose of the interposer is to distribute a connection layer to a larger connection field or to transfer a connection layer to another different connection layer.

[0221] therefore, Figure 8a -e shows a schematic representation of an exemplary interposer arrangement 50 (with further possible substrate topologies) according to further embodiments, for example, a method according to the present invention may be used. Figure 1 Or obtained by the manufacturing method 100 of FIG. 2 .

[0222] Figure 8a -e shows various topologies and hole geometries of the interposer arrangement 50, which can be produced by SLE and LIDE laser exposure and subsequent etching on one or both sides in the substrate 12 (e.g., a glass substrate). By local etch protection, the protected area may only be etched downstream, e.g., after metallization or via filling. For example, recessed surface grooves 12-1, blind vias 12-1, channel structures 12-1, and open vias 12-1 can be introduced into a substrate 12 that has been metallized on one or both sides by protecting the metallization 12-2 from etching attack with a protective mask.

[0223] Figure 8a -e shows various possible geometries of filled vias (fully or partially continuous via openings). The via channel 12-2 may also start and end on the same side of the substrate 12. The via channel 12-2 may also be split and start or end with a different number of arms between the first and second opposing major surface areas of the substrate 12 (see Figure 8d ).

[0224] Figure 9a An exemplary 3D channel structure 12 - 2 (eg, a 3D helix) in the substrate 12 is shown, which may be formed by, for example, Figure 1Or the manufacturing method 100 of the present invention of Figure 2. Figure 9a As shown, the electrical contacts 12 - 3 may be arranged on the same major surface side of the substrate 12 . Figure 9b Shows Figure 9a The 3D spiral 12-1 can be enlarged by, for example, a 3D X-ray tomography image of the 3D spiral. Figure 1 Or the manufacturing method 100 of FIG. 2 is manufactured in the substrate 12 (glass substrate). Here, Figure 9b Shown by Figure 1 Or the channel structure 12 - 2 produced after the SLE method in the method 100 of FIG. 2 in quartz or glass using aluminum pressure filling (via filling opening 15 ), as a 3D X-ray tomography image.

[0225] Fig.10 An exemplary perspective view (3D view) of an assembly in the form of a metal-filled spiral 12-2 in a substrate (eg, a glass substrate) 12 is shown, for example, by Figure 1 Or manufactured by the manufacturing method 100 of FIG. 2. Fig.10 As shown, the electrical contacts 12-3 can be arranged on the same main surface side of the substrate 12. The metal-filled spiral 12-2 in the substrate 12 can be arranged in the extension direction around the channel 18, for example, wherein the channel 18 in the substrate 12 can be filled with ferrite paste to produce a higher inductance of the coil (spiral) 12-2. The coil (spiral) 12-2 can also be configured to be flat in a plane and provided with a coil core.

[0226] Fig.11 An exemplary perspective view of a device in the form of a thin film getter structure 19 is shown, which has a through-hole contact 12-2 passing through the substrate 12 and, for example, by Figure 1 Or the manufacturing method 100 of Figure 2. Fig.11 As shown, the thin film getter structure 19 has a through-contact 12-2 from the back side, ie an electrical contact 12-3 is arranged on the same main surface side of the substrate 12 to heat the thin film getter structure 19 (for getter activation) via the through-contact 12-2.

[0227] Fig.12a -b shows the Figure 1 1 and 2. An exemplary perspective view and an exemplary cross-sectional view of an assembly in the form of a capacitor structure manufactured by the manufacturing method 100 of the present invention. Using the manufacturing method 100, a capacitor arrangement 60 having opposing contact surfaces 12-3 and lead electrodes 12-2 can be manufactured.

[0228] Fig.13a-c shows an exemplary cross-sectional view of a package assembly 70 according to a further embodiment, such as a MEMS, sensor and / or IC, having an Al through hole 12-2, such as an Al TGV, in the substrate 12, and for example, by Figure 1 Or the manufacturing process 100 of Figure 2 is manufactured for use as an electronic connection in the electrical via 12-2 and / or for use in the thermal connection 12-2 (for heat dissipation).

[0229] like Fig.13a As shown, the conductive channel structure 12-2 in the substrate 12 can be used to mechanically and / or electrically connect another substrate 13. In addition, the through opening 12-1 in the substrate 12 can be provided as an inlet and / or outlet for fluid, acoustics, etc., leading to a cavity 72 arranged between the two substrates 12, 13 and having electrical and / or mechanical components 74.

[0230] like Fig.13b As shown, a conductive feedthrough 12 - 2 may be provided in the substrate 12 for electrically connecting (rewiring) and / or thermally connecting (for dissipating heat to a heat sink) an electronic device 74 , which is arranged in a cavity 72 on the substrate 12 , between the two substrates 12 , 13 .

[0231] like Fig.13c As shown, a conductive feedthrough 12-2 can be set in the substrate 12 for electrically connecting (rewiring) and / or thermally connecting (dissipating heat to a heat sink) an optoelectronic device 74 (having several separate elements 74, 74', 74"), which is arranged in a cavity 72 on the substrate 12 and arranged between the two substrates 12 and 13.

[0232] exist Fig.13a In the arrangement of -b, the electronic component 74 may include a mechanical component (MEMS component), and in Fig.13c In one embodiment, the arrangement may include optoelectronic components (eg having high heat dissipation properties).

[0233] Fig.14 Shown by Figure 1 2 .

[0234] As will be described in more detail below, the method 200 may further remove excess metal filling material 14-2 from one side of the main surface area or both sides of the opposite main surface areas of the substrate 12, for example, by a chemical mechanical polishing (CMP) process. In addition, in the method 200, metallization may be performed on one side or both sides of the substrate 12 by a thin film deposition process to obtain, for example, a metallization structure 12-3 electrically connected to the conductive channel structure 12-2 on one or both main surface areas of the substrate 12 formed with the conductive channel structure 12-2 by a photolithography patterning process and a subsequent etching step.

[0235] like Fig.14 As shown in sub-image 1 (step 210), according to Figure 1 2, i.e., the substrate 12 provided with the conductive channel structure 12-2, forms a starting point for further processing (e.g., at the wafer level) according to the method 200. For example, the substrate 12 includes a plurality of conductive channel structures 12-2 having a plurality of conductive through-holes and a plurality of blind vias (or passive components).

[0236] Thus, the substrate (wafer) 12 comes from an Al filling process 100 , wherein the substrate 12 has a channel structure 12 - 2 filled with, for example, AlGe solder material (solder), wherein all other options described previously also apply to the material composition of the metal film 14 .

[0237] The following exemplary process steps illustrated in the following sub-images may be applied to obtain an interposer arrangement 50 (e.g., a glass interposer) with integrated passive and / or active elements (e.g., RF transistors) as part of further wafer processing 200. This combination of components is only to be regarded as an example of the resulting interposer arrangement 50.

[0238] like Fig.14 As shown in sub-step 2 (step 220), the substrate top side (wafer top side) 12-A of the substrate 12 may be conditioned or processed by etching or a grinding and polishing process (CMP process).

[0239] like Fig.14 As shown in sub-step 3 (step 230), the substrate bottom side (wafer bottom side) 12-B of the substrate 12 can be adjusted by etching or grinding and polishing process (CMP process).

[0240] like Fig.14 As shown in sub-step 4 (step 240) of the process flow, the substrate top side (wafer top side) 12-A of the substrate 12 can be processed with any patterned metallization 12-3 and any passivation layer 12-4. In this step, the process flow can also utilize the substrate top side (wafer top side) 12-A of the substrate 12.

[0241] like Fig.14 As shown in sub-image 5 (step 250) of FIG. 1 , the processing performed on the top side 12-A of the substrate in sub-image 4 (step 240) can also be performed on the bottom side (wafer bottom side) 12-B of the substrate and, if necessary, can also be performed using the resistive layer 12-5.

[0242] Fig.14 The sub-image 6a (step 260a) of shows an exemplary option, in which solder (soldering agent) 17 is applied to the corresponding contact surface 12-3 and an active element 74, such as a transistor, is mounted / attached. In the optional embodiment shown in the sub-image 6a, a cover 76 with the top surface 12-A (wafer top surface) of the substrate 12 (wafer) can be obtained by a mold compound (potting compound).

[0243] The components / assemblies 74 may then (in step 270a) be diced (on wafer level). The separated assemblies 74 are shown as an example in sub-image 7a.

[0244] like Fig.14 As shown in sub-image 6b (step 260b) of FIG. 1 , solder 17 may be applied to contact pads 12-3 on the second main surface 12-B of substrate 12, and further (e.g., active) devices 74 (e.g., transistors) may be mounted to the corresponding contact pads 12-3. In an alternative embodiment shown in sub-image 6b, a sealed coverage of the substrate top surface (wafer top surface) may be obtained by providing another substrate 78 (e.g., a glass or silicon wafer) with a cavity.

[0245] The part / assembly 74 may then be cut again (in step 270b), sub-image 7b showing an example of a cut assembly.

[0246] like Fig.14 As shown in the sub-image of FIG. 1 , the passive element, namely the channel structure 12 - 2 configured as a blind hole, may also take any other suitable form to provide a passive component associated with the transistor. Figure 1 Or the manufacturing method for filling the channel structure 12-1 (e.g., 3D channel) in the substrate 12 described in Figure 2 can be used to manufacture embedded passive components 12-2, such as coils with and without cores, coils with fluid channels for medical applications, antennas, capacitors, etc.

[0247] In the following, reference Figure 15-22 A further process for manufacturing a conductive channel structure 12-2 in a substrate 12 is described (a schematic flow chart 100-# of a method 100), wherein alternative embodiments of the clamping device 30 and its operating mode and different embodiments of the stacking arrangement 10 can be applied to the previously described manufacturing method 100. These further alternative embodiments, for example, can support Figure 1or 2a-b, although the compressible sealing element 16 is not explicitly shown in some alternatives of the manufacturing method 10 described below.

[0248] Below Figure 15-22 In the further embodiment 100-1-100-8 (100-#) of the flowchart of the manufacturing method 100 shown, the reference Figure 1 2 , compared to the previously described manufacturing method 100, additions and changes (differences) are specifically shown below. In addition, in different figures, the same elements, objects, functional blocks and / or method steps, or those elements, objects, functional blocks and / or method steps having the same function or the same effect have the same reference numerals, so that the descriptions of these elements, objects, functional blocks and / or method steps (having the same reference numerals) shown in different embodiments are interchangeable or mutually applicable.

[0249] An exemplary embodiment of achieving aspiration vacuum is described below (see also reference Figure 15-22 ), wherein the vacuum for drawing the melt 14-1 into the discontinuous hole structure (blind hole) 12-1 can be generated in different ways.

[0250] The vacuum can be applied in particular to a through hole or blind hole 12-1 with a very fine thread that passes through the vacuum chuck 34 from the bottom of the glass substrate 12 to be filled. Using negative pressure as a control variable can be complex in terms of process technology. However, it is advantageous to be able to dynamically control the vacuum in order to avoid excessive soaking of the melt 14-1 through the through hole. At a controlled contact pressure F P Under the influence of the above (mechanically and hydraulically, for example, by flooding the chamber (=processing chamber) with an inert gas), the flat cover substrate 32 (with a non-stick coating of BN, carbon, etc.) prevents the aluminum film 14 from shrinking during the melting process and from sagging in the direction of the substrate 12 to be filled during the filling of the through hole 12-1. The cover substrate 32 thus forms a covering mechanical valve to reduce the flow rate of the melt through the through hole 12-1. On the other hand, the cover substrate 32 avoids the top contact of the melt 14-1 with the surrounding atmosphere, so that the formation of surface nitrides and oxides on the aluminum can be avoided.

[0251] Fig.15 An exemplary schematic flow chart 100 - 1 is shown relating to an optional alternative procedure for producing an electrically conductive channel structure 12 - 2 in a substrate 12 by introducing a metallic filling material 14 - 1 into the channel structure 12 - 1 according to a further embodiment (provided a compressible sealing element 16 is used).

[0252] according to Fig.15In one embodiment of the flowchart 100-1 of the method 100, in step 120, a substrate 12 (e.g., a perforated glass wafer) having a channel structure 12-1 and an aluminum film 14 (anodically bonded) is placed on a second tool 34 (e.g., a vacuum chuck) and sucked thereon. The metal film 14 including an aluminum material can be, for example, anodically bonded to the substrate 12.

[0253] In order to perform the process flow 100-1 with an anodic pre-bonded aluminum film (metal film including aluminum material) 14, an anodic bondable substrate 12 (e.g., a glass substrate) is required. In step 140, in an inert gas environment with atmospheric pressure (e.g., positive pressure P1), the metal film (aluminum film) 14 can be pressed against the substrate 12 by the upper (coated) stopper 32 (first tool) and heated. This melts the metal film, wherein the channel structure (e.g., hole) 12-1 in the substrate 12 is at least partially or completely filled. Thus, the filling of the channel structure 12-1 is assisted by the atmospheric (suction) negative pressure (vacuum) provided by the second tool 34 (vacuum chuck).

[0254] In step 116, the processed stack arrangement 10 is cooled, and after cooling and venting the process chamber and turning off the vacuum pump, the substrate 12 (ie, the filled wafer) provided with the conductive channel structure 12-2 may be removed.

[0255] Reference now Fig.16 , a further exemplary schematic flow chart 100 - 2 of a manufacturing method 100 for manufacturing a conductive channel structure 12 - 2 in a substrate 12 by introducing a metal filling material 14 - 1 according to a further embodiment will be described.

[0256] Fig.16 Process 100-2 and Fig.15 The main difference of process 100 - 1 in FIG. 1 is that an AlCu roll plated sheet 14 (film) is used instead of an anodically pre-bonded aluminum film 14 , wherein the sheet 14 may also be optionally anodically bonded to the substrate 12 .

[0257] Since step 140 also melts a portion of the copper of the AlCu sheet 14, the AlCu alloy can be formed through the AlCu eutectic to fill the channel structure (hole) 12-1 to obtain a conductive channel structure 12-2 in the substrate.

[0258] Reference Fig.17 , another exemplary main flow chart 100 - 3 of a manufacturing method 100 for manufacturing a conductive channel structure 12 - 2 in a substrate 12 by introducing a metal fill material 14 - 1 according to further embodiments will be described.

[0259] For example, in process flow 100-3, an aluminum film 14 pre-bonded anodically on a glass wafer (glass substrate) 12 is used, wherein the perforated glass substrate 12 has, for example, a "Schott Af32-eco" material. In addition, the flow resistance of the liquefied metal material 14-1 is generated by the centrally narrowed hole geometry 23. For example, Fig.17 The glass substrate 12 corresponds to the reference Figure 6i The substrate 12 is described.

[0260] As will become apparent at step 140, the molten aluminum material 14-1 fills the pores (channel structures) 12-1 to a certain extent, for example, where the filling degree can be defined or adjusted by the pore geometry (pore cross section) and the provided atmospheric negative pressure (suction vacuum).

[0261] Reference Fig.18 , a further exemplary main flow chart 100 - 4 of a manufacturing method 100 for manufacturing a conductive channel structure 12 - 2 in a substrate 12 by introducing a metal filling material 14 - 1 according to a further embodiment will be described.

[0262] exist Fig.18 In the process flow 100-4 of the embodiment, two laterally offset substrates (glass substrates) 12, 12' create a flow stop. To this end, in step 120, a perforated substrate (glass wafer) 12 is arranged to be offset on a similar perforated substrate 12' (e.g., with a non-stick coating in between), wherein a suction channel 12-1 with a flow stop effect is created at a narrow portion 23.

[0263] In step 140, the liquefied metal (aluminum) 14-1 of the applied metal film 14 is thus mechanically flattened to interact with the (e.g. coated upper stopper) 32 (first tool) plane, wherein heating can be performed, for example, in a non-reactive gas environment (N2, Ar, etc.). In step 140 (melting the aluminum film in a non-reactive gas environment with a suction vacuum applied), the channel structure 12-1 of the substrate 12 is filled to the narrow portion 23 serving as a flow stopper.

[0264] In the following, reference will be made to Fig.19 Another exemplary main flow chart 100 - 5 depicts a manufacturing method 100 for manufacturing a conductive via structure 12 - 2 in a substrate 12 by introducing a metal fill material 12 according to further embodiments.

[0265] In process flow 100 - 5 , the channel structure (blind hole) 12 - 1 in the substrate is evacuated by a process of melting the spacer 25 .

[0266] In step 120, the perforated substrate (perforated glass wafer) 12 is placed on the vacuum chuck (second tool) 34 and sucked up, the aluminum film 14 is placed on the substrate 12 with the (laterally spaced) spacer 25, and the gap / spacing between the aluminum film 14 and the substrate 12 and the channel structure 12-1 are evacuated by chamber vacuum.

[0267] In step 140, the upper stopper (first tool) 32 is pressed into a flat surface and heated until the spacer 25 melts in the vacuum. As a result, the vacuum (negative pressure of atmospheric pressure) in the channel structure (blind hole) 12-1 remains airtightly closed by the aluminum film 14 pressed thereon.

[0268] The process chamber may be optionally filled with an inert gas to support pressing the aluminum film 14 onto the substrate 12. By heating to the process temperature, the metal material (aluminum) of the metal film 14 melts and flows into the evacuated channel structure (hole structure) 12-1.

[0269] After cooling and venting the process chamber and turning off the vacuum pump, the substrate 12 (filled wafer) provided with the conductive via structures 12 - 2 may be removed in step 116 .

[0270] Reference Fig. 20 , another exemplary schematic flow chart 100 - 6 of a manufacturing method 100 for manufacturing a conductive channel structure 12 - 2 in a substrate 12 by introducing a metal filling material 12 according to a further embodiment is described below.

[0271] In reference Fig. 20 In the process flow 100 - 6 shown, the aluminum foil 14 can be attached by a thin film welding process.

[0272] In step 120, the substrate 12 (perforated glass wafer) provided with the channel structure 12-1, for example, coated with the AlGe solder coating 27 on the surface upward, is placed on the second tool (vacuum chuck) 34 and adsorbed, and then the aluminum film 14 is placed on the coated substrate 12. In step 140, pressing (mechanical pressure) is established with the upper coating stopper (first tool) 32 in a vacuum environment, and the upper stopper 32 is heated to produce a eutectic AlGe solder with the AlGe solder coating 27 of the Al film 14.

[0273] When heated to the process temperature T P During this time, the aluminum film is then completely melted and introduced (allowed to flow) into the (optionally stepped) channel structure (blind hole) 12 - 1 in the substrate 12 .

[0274] In step 160, after the process chamber has been cooled and vented and the vacuum pump has been turned off, the filled substrate (filled wafer) 12 may be removed.

[0275] Reference Fig.21 , another exemplary schematic flow chart 100 - 7 of a manufacturing method 100 for manufacturing a conductive channel structure 12 - 2 in a substrate 12 by introducing a metal filling material 12 according to a further embodiment is described below.

[0276] Fig.21 Process 100-7 and Fig. 20 The difference between the process 100-6 in the embodiment is that the substrate (eg, perforated glass wafer) 12 has a channel structure 12-1 in both a blind hole form and a feedthrough form. According to the process flow 100-7, the channel structure 12-1 in the substrate 12 configured as both a feedthrough and a blind hole can be filled with molten metal.

[0277] Reference Fig. 22 , a further exemplary schematic flow chart 100 - 8 of a manufacturing method 100 for manufacturing a conductive channel structure 12 - 2 in a substrate 12 by introducing a metal filling material 12 according to a further embodiment will be described below.

[0278] exist Fig. 22 In the process flow 100-8 shown, aluminum pressure melt filling is performed (without using the surface seal 16) with flow resistance through the counter substrate 34. In step 120, the substrate 12 (perforated glass wafer) provided with the channel structure 12-1 is arranged on the counter substrate (second tool) 34 coated with the rough non-stick layer 36.

[0279] In step 140, the channel structure 12-1 is pressure filled, with a flow stop effect on the surface of the counter substrate 34. In step 160, the substrate (glass substrate) 12 equipped with aluminum TGVs may be removed.

[0280] Although some aspects of the present disclosure are described as features related to the device, it is clear that such a description may also be regarded as a description of the corresponding features of the method. Although some aspects are described as features related to the method, it is clear that such a description may also be regarded as a description of the corresponding features of the device or the device functions. Some or all of the method steps may be performed by (or using) a hardware device, such as a microprocessor, a programmable computer, or an electronic circuit. In some embodiments, some or several method steps may be performed by such a device. Depending on specific implementation requirements, embodiments of the present invention may be implemented in hardware or software, or at least partially in hardware or at least partially in software.

[0281] In the foregoing detailed description, various features are partially grouped together in the examples to rationalize the disclosure. The disclosure should not be interpreted as intending that the claimed examples include more features than those explicitly indicated in each claim. On the contrary, as the following claims reflect, the subject matter may lie in the features of a single disclosed example being less than all of the features. Therefore, the following claims are incorporated into the detailed description by reference, where each claim can serve as its own separate example. Although each claim can serve as its own separate example, it is worth noting that although the dependent claims in the claims refer to a specific combination with one or more other claims, other examples also include a combination of a dependent claim with the subject matter of any other dependent claim, or any feature with any other dependent or independent claim. Unless it is explicitly stated that a specific combination is not intended to be used, these combinations are included. It is further intended that the combination of the features of a claim with any other independent claim is also included, even if the claim is not directly dependent on the independent claim.

[0282] Although specific embodiments have been shown and described herein, it will be appreciated by those skilled in the art that various alternatives and / or equivalent implementations may be used to replace the specific embodiments shown and described therein without departing from the subject matter of the present application. The text of this application is intended to cover all adaptations and variations of the specific embodiments described and discussed herein. Therefore, the subject matter of this application is limited only by the wording of the claims and their equivalent embodiments.

Claims

1. A method (100; 100-#) for manufacturing a conductive channel structure in a substrate, comprising the following steps: A stacking arrangement (10) is provided (120) in a clamping device (30), the stacking arrangement (10) comprising a substrate (12) provided with a channel structure (12-1), a metal film (14) comprising an aluminum material on the substrate (12), and a compressible sealing element (16) configured to at least laterally surround the metal film (14) while applying pressure, A mechanical process pressure (F) acting in a planar manner is applied (140) to the stack arrangement (10) by means of a clamping device (30). P ) and process temperature (T P ) to melt the metal film (14) containing aluminum material at a process temperature and introduce it as a metal filling material (14-1) into the channel structure (12-1) by a mechanical process pressure acting in a plane, and The stack arrangement (10) is cooled (160) to solidify the introduced metal filling material (14-1) and obtain a conductive channel structure (12-2) filled with the metal filling material (14-1).

2. The method (100) according to claim 1, wherein the channel structure is configured as at least one through hole structure, at least one blind hole structure or at least one 3D structure in the substrate.

3. The method (100) according to claim 1, wherein the metal film comprises aluminum material as a main component (≥80%) so that the final melting point is at least 420°C or between 420°C and 850°C.

4. The method (100) according to claim 1, wherein the process temperature is set to a value at least 10 K higher than a melting temperature of the metal film including the aluminum material.

5. The method (100) of claim 1, wherein the channel structure comprises a wall coating comprising a nitride material having a thickness in the range of 5 to 100 nm.

6. The method (100) of claim 1, wherein the compressible sealing element is configured as a reusable high temperature gasket.

7. The method (100) of claim 1, wherein the compressible sealing element is configured as a compressible surface sealing element, and wherein the surface sealing element covers the metal film and has a lateral protrusion to enclose the metal film to the substrate when a mechanical process pressure is applied.

8. The method (100) of claim 7, wherein the surface sealing element comprises a graphite film having a thickness in the range of 0.3 to 1 mm or a thickness of about 0.5 mm.

9. The method (100) of claim 1, wherein the compressible sealing element is configured as a compressible annular sealing element, and wherein the annular sealing element surrounds an edge region of the metal membrane and laterally encloses the metal membrane while applying pressure.

10. The method (100) according to claim 9, wherein the annular sealing element comprises a structured graphite film having a thickness in the range of 0.3 to 1 mm or a thickness of about 0.5 mm.

11. The method (100) of claim 1, wherein the clamping arrangement comprises a first tool and a second tool, and wherein the stacking arrangement is arranged between the first tool and the second tool.

12. The method (100) of claim 1, wherein the step of applying a mechanical pressure between the first tool and the second tool is at 10 N / cm 2 Up to 600N / cm 2 The contact pressure is within the specified range.

13. The method (100) of claim 11, wherein the first tool and / or the second tool is configured to heat the stack arrangement to a process temperature.

14. The method (100) of claim 11, wherein the first tool is configured as a stamping punch and the second tool is configured as a counter substrate, wherein: The main surface area of ​​the second tool facing the substrate has a central roughness value R a Or average roughness depth R Z Surface roughness between 0.5 and 10 μm or about 3 μm.

15. The method (100) according to claim 14, wherein the main surface area of ​​the second tool facing the substrate comprises a coating to provide a surface roughness of the main surface area of ​​the second tool facing the substrate.

16. The method (100) of claim 14, wherein the coating comprises a boron nitride material.

17. The method (100) of claim 14, wherein: The surface roughness of the main surface area of ​​the second tool adjacent to the substrate is selected to act as an effective flow barrier for the molten metal and to allow lateral escape of gases present in the channel structure.

18. The method (100) of claim 1, wherein the substrate comprises glass, quartz, sapphire, ceramic, or a semiconductor material.

19. The method (100) according to claim 1, further comprising the steps of: Excess metal filling material is removed from one side of one main surface region or both sides of two opposite main surface regions of the substrate.

20. The method (100) of claim 19, wherein the excess material is removed by a CMP (chemical mechanical polishing) process.

21. The method (100) of claim 1, further comprising the steps of: removing the stacking arrangement from the clamping arrangement, and The sealing element is removed from the base plate.

22. The method (100) of claim 1, further comprising the steps of: Metallization is performed on one or both sides by a thin film deposition process to obtain a metallization structure electrically connected to the conductive via structure on one or both main surface areas of the substrate provided with the conductive via structure by a photolithographic patterning process and a subsequent etching step.

23. An inserter arrangement (50) comprising: A substrate comprising an electrically and / or thermally conductive channel structure (12-2) extending at least partially through the substrate (12), wherein the channel structure (12-2) comprises an aluminum material or an aluminum material alloy, and wherein the channel structure (12-2) extends from a major surface area of ​​the substrate (12) into the substrate (12), and The aluminum material or aluminum material alloy contains at least 80% aluminum as a main component and has a final melting point of at least 420° C. or between 420° C. and 850° C. as a brazing hard solder.

24. The interposer arrangement (50) of claim 23, wherein the conductive pathway structure (12-2) extends from one major surface area of ​​the substrate into the substrate and to an opposite major surface area of ​​the substrate.

25. The interposer arrangement (50) of claim 23, wherein the conductive pathway structure (12-2) at least partially does not extend in a direction perpendicular to two opposing major surface areas of the substrate.

26. The interposer arrangement (50) of claim 23, wherein the channel structure (12-2) comprises an aluminum material or an aluminum material alloy, and wherein the electrically conductive channel structure extends perpendicularly to two opposing major surface areas of the substrate.

27. The interposer arrangement (50) of claim 26, wherein the conductive pathway structure (12-2) is configured as at least one thermal connection for dissipating heat through the substrate (12).

28. The interposer arrangement (50) of claim 23, wherein the conductive pathway structure (12-2) is configured as at least one electrical via through the substrate and / or at least one passive component in the substrate.

29. The inserter arrangement (50) according to claim 28, wherein At least one through hole through the substrate has an aspect ratio of length to diameter of 50:

1.

30. The inserter arrangement (50) of claim 23, wherein the inserter arrangement is manufactured by the method of claim 1.

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