Substrate processing apparatus and substrate processing method

Abstract

The present disclosure provides a substrate processing apparatus and a substrate processing method to restrict positional displacement of a substrate. A substrate processing apparatus includes: a first suction unit that sucks a first region of a lower surface of a substrate; a second adsorption unit that adsorbs a second region of the lower surface of the substrate; and a friction body that rubs the first region on the lower surface of the substrate in a state in which the second adsorption part adsorbs the substrate, and rubs the second region on the lower surface of the substrate in a state in which the first adsorption part adsorbs the substrate. The second region is a region closer to the outside in the radial direction of the substrate than the first region. The substrate processing apparatus is provided with an abutting part which is arranged on the second adsorption part and abuts against the periphery of the substrate so as to limit the position deviation of the substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] The substrate processing device described in Patent Document 1 includes two adsorption pads, a liquid receiving cup, a rotating holding disk, a first cleaning unit, and a second cleaning unit. The two adsorption pads adsorb and hold the lower surface of the substrate horizontally. The liquid receiving cup is connected to the two adsorption pads. The rotating holding disk adsorbs and holds the lower surface of the substrate received from the adsorption pads horizontally. The first cleaning unit cleans the upper surface of the substrate. The second cleaning unit cleans the lower surface of the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-43156 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] One embodiment of the present disclosure provides a technology for limiting positional deviation of a substrate.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one embodiment of the present disclosure includes: a first adsorption portion that adsorbs a first area of ​​the lower surface of a substrate; a second adsorption portion that adsorbs a second area of ​​the lower surface of the substrate; and a friction body that rubs the first area of ​​the lower surface of the substrate when the second adsorption portion adsorbs the substrate, and rubs the second area of ​​the lower surface of the substrate when the first adsorption portion adsorbs the substrate. The second area is an area radially outside the substrate than the first area. The substrate processing device includes an abutment portion, which is provided on the second adsorption portion and limits the positional deviation of the substrate by abutting against the peripheral edge of the substrate.

[0010] Effects of the Invention

[0011] According to one aspect of the present disclosure, positional deviation of the substrate can be restricted. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a top view showing an example of a substrate processing system.

[0013] Figure 2 is a top view showing an example of a substrate processing apparatus, Fig. 9 FIG. 1 is a top view of an example of step S104.

[0014] Figure 3 It is shown Fig. 9 A cross-sectional view of an example of step S104.

[0015] Figure 4 It is shown Fig. 9 FIG. 1 is a top view of an example of step S102.

[0016] Figure 5 It is shown Fig. 9 A cross-sectional view of an example of step S102.

[0017] Figure 6 This is a cross-sectional view showing an example of the operation of the first lifting unit.

[0018] Figure 7 Then Figure 6 A cross-sectional view showing an example of the operation of the first lifting unit.

[0019] Figure 8 It is a plan view showing an example of the first region and the second region of the lower surface of the substrate.

[0020] Fig. 9 This is a flowchart showing an example of the operation of the substrate processing apparatus.

[0021] Fig.10 Yes Figure 2 The cup shown is partially broken away to show a plan view of an example of a contact portion.

[0022] Fig.11 It is a cross-sectional view showing an example of the inclined surface of the contact portion.

[0023] Fig.12 This is a cross-sectional view showing an example of the state of the contact portion when the first lifting portion lowers the substrate to the second adsorption portion.

[0024] Fig.13 This is a cross-sectional view showing an example of the state of the contact portion when the friction body rubs the first area of ​​the lower surface of the substrate.

[0025] Fig.14 It is a cross-sectional view showing an example of the state of the contact portion when the second adsorption portion releases the adsorption of the substrate.

[0026] Fig.15 This is a cross-sectional view showing an example of the state of the contact portion when the second lifting portion lowers the second adsorption portion to transfer the substrate from the second adsorption portion to the first adsorption portion.

[0027] Fig.16 This is a cross-sectional view showing an example of the state of the contact portion when the friction body rubs the second region of the lower surface of the substrate.

[0028] Fig.17 This is a cross-sectional view showing an example of the state of the contact portion when the first adsorption portion releases adsorption of the substrate.

[0029] Fig.18 This is a diagram showing an example of the state of the contact portion when the first lifting portion lifts the substrate from the first adsorption portion. DETAILED DESCRIPTION

[0030] Below, with reference to the accompanying drawings, embodiments of the present disclosure are described. In addition, in each of the accompanying drawings, the same figure mark is given to the same or corresponding structure, and the description is sometimes omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. The X-axis direction includes the positive direction of the X-axis and the negative direction of the X-axis, which is the direction opposite to the positive direction of the X-axis. The Y-axis direction includes the positive direction of the Y-axis and the negative direction of the Y-axis, which is the direction opposite to the positive direction of the Y-axis. The Z-axis direction includes the positive direction of the Z-axis and the negative direction of the Z-axis, which is the direction opposite to the positive direction of the Z-axis.

[0031] Reference Figure 1 , an example of a substrate processing system 100 is described. The substrate processing system 100 is used to process a substrate W. The substrate W includes, for example, a semiconductor wafer such as a silicon wafer. The substrate W may also include a plurality of devices formed on the semiconductor wafer. The device includes, for example, an electronic circuit. The substrate W may also be a stacked substrate formed by stacking a plurality of semiconductor wafers. The stacked substrate is obtained by bonding a plurality of semiconductor wafers.

[0032] The substrate processing system 100 includes a loading and unloading station 110, a processing station 120, and a control device 190. The loading and unloading station 110 includes a loading table 111. Boxes C1 and C2 are loaded on the loading table 111. Box C1 stores substrates W before processing. Box C2 stores substrates W after processing. There is no particular limitation on the number of boxes C1 and C2. Boxes not shown in the figure can also store substrates W that have a defective condition in the middle of processing.

[0033] The loading and unloading station 110 includes a first conveying area 112 and a first conveying device 113. The first conveying area 112 extends in the Y-axis direction, and the first conveying area 112 is adjacent to the mounting table 111 and the conveying device 121. The first conveying device 113 conveys the substrate W between a plurality of devices adjacent to the first conveying area 112. The first conveying device 113 includes a conveying arm for holding the substrate W, and a driving unit for moving or rotating the conveying arm. The conveying arm can move in the horizontal direction (the two directions of the X-axis direction and the Y-axis direction) and the vertical direction (the Z-axis direction), and rotate around the vertical axis. A plurality of conveying arms may also be provided.

[0034] The processing station 120 includes a conveyor 121, a second transfer area 122, a second transfer device 123, and a substrate processing device 124. In addition, the arrangement and number of devices constituting the processing station 120 are not limited to Figure 1 Configuration and quantity shown.

[0035] The conveyor 121 temporarily stores the substrates W. The conveyor 121 is provided between the first conveying region 112 and the second conveying region 122 , and relays the substrates W between the first conveyor 113 and the second conveyor 123 .

[0036] The second transport area 122 extends in the X-axis direction, and the second transport area 122 is adjacent to the conveyor 121 and the substrate processing device 124. The second transport device 123 transports the substrate W between multiple devices adjacent to the second transport area 122. The second transport device 123 has a transport arm that holds the substrate W, and a drive unit that moves or rotates the transport arm. The transport arm can move in the horizontal direction (the two directions of the X-axis direction and the Y-axis direction) and the vertical direction, and rotate around the vertical axis. Multiple transport arms can also be provided.

[0037] The substrate processing device 124 processes the substrate W using a processing liquid. The processing liquid includes, for example, a chemical liquid and a rinse liquid. The chemical liquid is not particularly limited, and may be, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). In addition to being a cleaning liquid for removing contamination attached to the substrate W, the chemical liquid may also be an etching liquid or a stripping liquid. The rinse liquid may be, for example, DIW (deionized water). The chemical liquid and the rinse liquid may also be supplied to the substrate W in sequence.

[0038] The control device 190 is, for example, a computer, and includes a computing unit 191 such as a CPU (Central Processing Unit) and a storage unit 192 such as a memory. The storage unit 192 stores programs for controlling various processes performed in the substrate processing system 100. The control device 190 controls the operation of the substrate processing system 100 by causing the computing unit 191 to execute the program stored in the storage unit 192. A unit control unit for controlling the operation of the unit may be provided for each unit constituting the substrate processing system 100, and a system control unit for uniformly controlling a plurality of unit control units may be provided. The control device 190 may also be constituted by a unit control unit and a system control unit.

[0039] Next, an example of the operation of the substrate processing system 100 will be described. First, the first transfer device 113 takes out the substrate W from the cassette C1 and transfers it to the conveyor 121. Next, the second transfer device 123 takes out the substrate W from the conveyor 121 and transfers it to the substrate processing apparatus 124.

[0040] Next, the substrate processing apparatus 124 processes the substrate W using the processing liquid. Thereafter, the second transporting apparatus 123 takes the substrate W out of the substrate processing apparatus 124 and transports it to the conveyor 121. Finally, the first transporting apparatus 113 takes the substrate W out of the conveyor 121 and stores it in the cassette C2.

[0041] Next, the main reference Figure 2 to Figure 8 An example of the substrate processing apparatus 124 is described below. Figure 3 As shown, the substrate processing device 124 includes, for example, a first adsorption unit 11, a second adsorption unit 12, a rotation drive unit 13, a first lifting unit 14, a cup 20, and a second lifting unit 25 (see Figure 2 ), horizontal moving unit 26 (refer to Figure 2 ), a cleaning unit 30, a processing tank 40, a drain pipe 45, an exhaust pipe 46, an exhaust pipe cover 47, a friction body 50, and a friction body moving unit 55.

[0042] The first adsorption part 11 and Figure 8 The first adsorption unit 11 contacts the first area A1 of the lower surface of the substrate W shown in the figure, and adsorbs the substrate W to be horizontal. The first area A1 is an area including the center of the lower surface of the substrate W. In the present embodiment, the first adsorption unit 11 vacuum adsorbs the substrate W, but the substrate W may also be electrostatically adsorbed. The first adsorption unit 11 is, for example, a rotating holding disk, which is driven to rotate by the rotation drive unit 13. The first adsorption unit 11 rotates around a vertical rotation axis. The first adsorption unit 11 may also be movable in the Z-axis direction.

[0043] A first lifting unit 14 is arranged around the first adsorption unit 11. The first lifting unit 14 abuts against the lower surface of the substrate W to lift the substrate W. The first lifting unit 14 includes, for example, lifting pins. A plurality of (for example, three) lifting pins are arranged at equal intervals in the circumferential direction of the first adsorption unit 11. The first lifting unit 14 transfers the substrate W between the first adsorption unit 11 or the second adsorption unit 12 and the conveying arm of the second conveying device 123.

[0044] In addition, a gas ejection ring 15 is arranged around the first adsorption part 11. The gas ejection ring 15 surrounds the first adsorption part 11 and forms an annular air curtain toward the lower surface of the substrate W. The air curtain restricts the processing liquid from entering from the outside of the air curtain to the inside, thereby protecting the first adsorption part 11. The air curtain also protects the first lifting part 14 arranged inside the air curtain. The gas ejection part may not be annular.

[0045] The second adsorption part 12 Figure 8The second adsorption portion 11 contacts the second area A2 on the lower surface of the substrate W shown, and adsorbs the substrate W to be horizontal. The second area A2 is an area radially outside the substrate W than the first area A1. A pair of second areas A2 are provided across the center of the lower surface of the substrate W. A pair of second adsorption portions 12 adsorbs the pair of second areas A2. In the present embodiment, the second adsorption portion 12 performs vacuum adsorption on the substrate W, but electrostatic adsorption on the substrate W may also be performed. The second adsorption portion 12 is, for example, an adsorption pad, and is arranged across the first adsorption portion 11 in the X-axis direction. The second adsorption portion 12 is connected to the cup 20, and can move in the horizontal direction (Y-axis direction) and the vertical direction together with the cup 20.

[0046] The cup 20 is annular and open in both vertical directions, and surrounds the periphery of the substrate W held by the first adsorption portion 11 or the second adsorption portion 12. The cup 20 has a cylindrical vertical wall 21 and an upper wall 22 protruding radially inward from the upper end of the cylindrical vertical wall 21. The cup 20 receives the processing liquid supplied to the substrate W.

[0047] The second lifting unit 25 lifts and lowers the second adsorption unit 12. The second lifting unit 25 lifts and lowers the second adsorption unit 12 together with the cup 20. The horizontal moving unit 26 moves the second adsorption unit 12 in the horizontal direction (Y-axis direction) orthogonal to the rotation axis of the first adsorption unit 11. The horizontal moving unit 26 moves the second adsorption unit 12 together with the cup 20 in the Y-axis direction. The cup 20 moves inside the processing tank 40. When viewed from above, the side surface 42 of the processing tank 40 surrounds the entire moving range of the cup 20.

[0048] The cleaning unit 30 supplies a processing liquid to the substrate W surrounded by the cup 20. The processing liquid includes, for example, a chemical liquid and a rinse liquid. The chemical liquid is not particularly limited, and may be, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). In addition to being a cleaning liquid for removing contaminants attached to the substrate W, the chemical liquid may also be an etching liquid or a stripping liquid. The rinse liquid may be, for example, DIW (deionized water). The chemical liquid and the rinse liquid may also be supplied to the substrate W in sequence.

[0049] The cleaning unit 30 includes lower nozzles 31 and 32 for supplying a processing liquid to the lower surface of the substrate W (see Figure 2 and Figure 4 ). The lower nozzles 31 and 32 are connected to the supply source of the treatment liquid via pipes not shown in the figure. A valve and a flow controller are provided in the middle of the pipes. When the valve opens the flow path of the pipes, the treatment liquid is ejected from the lower nozzles 31 and 32. The amount of the ejection is controlled by the flow controller. On the other hand, when the valve blocks the flow path of the pipes, the ejection of the treatment liquid stops.

[0050] The cleaning unit 30 includes an upper nozzle 33 for supplying a processing liquid to the upper surface of the substrate W (see Figure 3). The upper nozzle 33 is connected to a supply source of the processing liquid via a pipe (not shown) similarly to the lower nozzles 31 and 32. The upper nozzle 33 may also be a two-fluid nozzle, which can crush the processing liquid using a gas such as N2 gas and spray it in a micronized form.

[0051] The cleaning unit 30 includes a nozzle moving unit 34 that moves the upper nozzle 33 in the horizontal direction and the vertical direction. The nozzle moving unit 34 moves the upper nozzle 33 to a position where the processing liquid is supplied to the substrate W surrounded by the cup 20 (see Figure 3 ) and the position where the discharge port of the upper nozzle 33 is accommodated in the nozzle groove 35 (refer to Figure 5 )

[0052] The nozzle groove 35 is also called a pseudo distribution port. Immediately before the processing liquid is supplied from the upper nozzle 33 to the substrate W, the old processing liquid (for example, the processing liquid whose temperature has been reduced) accumulated in the upper nozzle 33 is ejected to the nozzle groove 35, thereby enabling the new processing liquid (for example, the processing liquid whose temperature is controlled to a desired temperature) to be supplied to the substrate W. A discharge pipe is provided on the bottom wall of the nozzle groove 35. The discharge pipe discharges the processing liquid accumulated in the nozzle groove 35 into the interior of the processing tank 40. The discharge pipe is provided vertically. The processing liquid flows down in the discharge pipe due to gravity. The lower end of the discharge pipe is arranged at a position above the bottom surface 43 of the processing tank 40.

[0053] The processing tank 40 recovers the processing liquid dropped from the cup 20. The processing tank 40 is, for example, in the shape of a box with an open top. The inner wall surface 41 of the processing tank 40 has a side surface 42 and a bottom surface 43. The bottom surface 43 has a discharge port 44 for discharging the processing liquid. A drain pipe 45 is provided at the discharge port 44. The drain pipe 45 discharges the processing liquid from the inside of the processing tank 40 to the outside. In addition to the drain pipe 45, an exhaust pipe 46 is also provided on the bottom surface 43 of the processing tank 40. The exhaust pipe 46 is, for example, provided on both sides of the X-axis direction with the rotation drive unit 13 as a reference.

[0054] The exhaust pipe 46 exhausts gas from the inside of the processing tank 40 to the outside. The exhaust pipe 46 protrudes upward from the bottom surface 43 of the processing tank 40. The exhaust pipe 46 is covered with an exhaust pipe cover 47. The exhaust pipe cover 47 prevents droplets of the processing liquid from entering the exhaust pipe 46. In addition, the exhaust pipe cover 47 protects the rotation drive unit 13 from the droplets of the processing liquid. The exhaust pipe cover 47 extends in two directions, the positive direction of the X axis and the negative direction of the X axis, with the rotation drive unit 13 as a reference.

[0055] The friction body 50 rubs the lower surface of the substrate W. The friction body 50 is a brush or a sponge. The friction body 50 is, for example, cylindrical, and the upper surface of the friction body 50 is arranged horizontally. The upper surface of the friction body 50 is smaller than the lower surface of the substrate W. The friction body 50 is formed of a resin such as PVA (polyvinyl alcohol).

[0056] The friction body 50 is rotated by a rotary motor 51. The rotary motor 51 is provided at one end of an arm 53. A friction body moving unit 55 is provided at the other end of the arm 53. The friction body moving unit 55 moves the friction body 50 in the horizontal direction and the vertical direction via the arm 53.

[0057] Next, refer to Fig. 9 An example of the operation of the substrate processing device 124 is described below. Fig. 9 As shown, the substrate processing apparatus 124 performs steps S101 to S106. Steps S101 to S106 are performed under the control of the control device 190. The control device 190 may also be a part of the substrate processing apparatus 124.

[0058] Step S101 includes moving the substrate W from the outside of the substrate processing device 124 to the inside. First, the transfer arm of the second transfer device 123 transfers the substrate W to the top of the cup 20 and waits above the cup 20. At this time, when viewed from above, as shown in FIG. Figure 2 As shown, the center of the substrate W, the center of the first adsorption portion 11, and the center of the cup 20 coincide with each other.

[0059] The first lifting unit 14 raises the plurality of lifting pins to receive the substrate W from the transfer arm of the second transfer device 123. At this time, the transfer arm may be lowered. Thereafter, when the transfer arm withdraws from the substrate processing device 124, the second lifting unit 25 raises the cup 20, and the first lifting unit 14 lowers the substrate W together with the plurality of lifting pins, and lowers the substrate W to the second adsorption unit 12 (see FIG. Figure 7 ).

[0060] Next, the second adsorption unit 12 adsorbs the second area A2 on the lower surface of the substrate W. Then, the horizontal moving unit 26 moves the substrate W together with the cup 20 and the second adsorption unit 12 in the horizontal direction (negative direction of the Y axis) to the position shown in FIG. Figure 4 The diagram extends to a position where the first area A1 of the lower surface of the substrate W overlaps with the friction body 50 when viewed from above.

[0061] like Figure 5 As shown, step S102 includes cleaning the central portion of the lower surface of the substrate W. For example, in a state where the second adsorption portion 12 adsorbs the second area A2 of the lower surface of the substrate W, the friction body 50 rubs the first area A1 of the lower surface of the substrate W. The friction body 50 only needs to rub at least the first area A1, and may also rub an area wider than the first area A1. It is sufficient that the friction body 50 rubs the entire lower surface of the substrate W through steps S102 and S104.

[0062] The rubbing body moving part 55 moves the rubbing body 50 in the horizontal direction while pushing the rubbing body 50 to the first area A1 of the lower surface of the substrate W. In addition, the horizontal moving part 26 moves the second adsorption part 12 together with the cup 20 in the horizontal direction (the positive direction of the Y axis and the negative direction of the Y axis). In addition, the moving direction of the rubbing body 50 is a direction intersecting with the moving direction of the cup 20. While the rubbing body 50 rubs the first area A1 of the lower surface of the substrate W, the lower nozzles 31 and 32 supply the processing liquid to the first area A1 of the lower surface of the substrate W.

[0063] Step S103 includes switching the substrate W from the second adsorption unit 12 to the first adsorption unit 11. First, the horizontal moving unit 26 moves the substrate W together with the cup 20 and the second adsorption unit 12 in the horizontal direction (X-axis positive direction) to a position that is as shown when viewed from above. Figure 2 The center of the substrate W is shown until the center of the first adsorption portion 11 coincides with the center of the substrate W.

[0064] Next, the second adsorption unit 12 releases the adsorption of the lower surface of the substrate W. Next, the second lifting unit 25 lowers the substrate W together with the second adsorption unit 12, and transfers the substrate W from the second adsorption unit 12 to the first adsorption unit 11. Thereafter, the first adsorption unit 11 starts adsorption of the lower surface of the substrate W. While the second lifting unit 25 lowers the substrate W together with the second adsorption unit 12, the first adsorption unit 11 and the second adsorption unit 12 may not adsorb the substrate W, so that no load is applied to the substrate W.

[0065] like Figure 3 As shown, step S104 includes cleaning the peripheral portion of the lower surface of the substrate W. In a state where the first adsorption portion 11 adsorbs the first area A1 of the lower surface of the substrate W, the friction body 50 rubs the second area A2 of the lower surface of the substrate W. The friction body 50 only needs to rub at least the second area A2, and may also rub an area wider than the second area A2. It is sufficient that the friction body 50 rubs the entire lower surface of the substrate W through steps S102 and S104.

[0066] The rubbing body moving unit 55 moves the rubbing body 50 in the horizontal direction while pushing the rubbing body 50 to the second area A2 of the lower surface of the substrate W. In addition, the rotation drive unit 13 rotates the substrate W together with the first adsorption unit 11. While the rubbing body 50 rubs the second area A2 of the lower surface of the substrate W, the lower nozzles 31 and 32 supply the processing liquid to the second area A2 of the lower surface of the substrate W.

[0067] In addition, while the rotation drive unit 13 rotates the substrate W together with the first adsorption unit 11, the upper surface of the substrate W is cleaned. For example, the upper nozzle 33 supplies the processing liquid to the upper surface of the substrate W. The upper nozzle 33 can supply the processing liquid to the central part of the upper surface of the substrate W, or can move in the radial direction of the substrate W and supply the processing liquid throughout the entire radial direction of the substrate W. In addition, the second friction body not shown in the figure can also rub the upper surface of the substrate W. In addition, the third friction body not shown in the figure can also rub the inclined surface of the substrate W.

[0068] Step S105 includes drying the substrate W. For example, the rotation drive unit 13 rotates the first adsorption unit 11 at a high speed, thereby shaking off the processing liquid attached to the substrate W.

[0069] Step S106 includes carrying the substrate W from the inside of the substrate processing device 124 to the outside. First, the first adsorption unit 11 releases the adsorption of the substrate W, and the first lifting unit 14 raises the substrate W together with the plurality of lifting pins. Next, the transport arm of the second transport device 123 enters from the outside of the substrate processing device 124 to the inside, and receives the substrate W from the plurality of lifting pins. At this time, the transport arm can be raised or the lifting pins can be lowered. Thereafter, the transport arm withdraws from the substrate processing device 124.

[0070] As described above, the substrate W is transferred between the plurality of components. First, the substrate W is transferred to the first lifting unit 14 by the transfer arm of the second transfer device 123, and then transferred to the second adsorption unit 12 by the first lifting unit 14. Then, the second adsorption unit 12 starts adsorption of the substrate W. While the second adsorption unit 12 adsorbs the second area A2 of the lower surface of the substrate W, the friction body 50 rubs the first area A1 of the lower surface of the substrate W. Next, the substrate W is transferred to the first adsorption unit 11 by the second adsorption unit 12. At this time, the second adsorption unit 12 releases adsorption of the substrate W, and the first adsorption unit 11 starts adsorption of the substrate W. Then, while the first adsorption unit 11 adsorbs the first area A1 of the lower surface of the substrate W, the friction body 50 rubs the second area A2 of the lower surface of the substrate W. Next, the substrate W is transferred to the first lifting unit 14 by the first adsorption unit 11. At this time, the first adsorption unit 11 releases adsorption of the substrate W. Finally, the substrate W is transferred to the transfer arm of the second transfer device 123 by the first lifting unit 14.

[0071] The substrate processing device 124 is as follows Fig.10The abutment portion 60 is also provided to limit the positional deviation of the substrate W when the substrate W is viewed from above the substrate W when the substrate W is handed over, when the adsorption of the substrate W is started, or when the adsorption of the substrate W is released. The abutment portion 60 limits the positional deviation of the substrate W by abutting against the periphery of the substrate W. That is, the abutment portion 60 brings the position of the substrate W into an allowable range relative to the target position by abutting against the periphery of the substrate W. The allowable range is determined so that the substrate processing device 124 can properly process the substrate W.

[0072] When the substrate W is at the target position, the contact portion 60 may not contact the substrate W. There is no particular limitation on the gap between the substrate W and the contact portion 60 when the substrate W is at the target position, and it is 0.1 mm, for example. When the substrate W deviates from the target position, the contact portion 60 abuts against the substrate W. Even when the warping of the substrate W is complex or the friction coefficient of the lower surface of the substrate W is small, the contact portion 60 can limit the positional deviation of the substrate W.

[0073] The abutting portion 60 is provided at the second adsorption portion 12. From the time when the substrate W is carried in to the time when the substrate W is carried out, the relative position of the second adsorption portion 12 with respect to the substrate W is fixed when the substrate W is observed from above the substrate W. Therefore, if the abutting portion 60 is provided at the second adsorption portion 12, the relative position of the abutting portion 60 with respect to the substrate W is fixed when the substrate W is observed from above the substrate W from the time when the substrate W is carried in to the time when the substrate W is carried out. Therefore, from the time when the substrate W is carried in to the time when the substrate W is carried out, the abutting portion 60 can limit the position deviation of the substrate W in various scenarios.

[0074] The second adsorption portion 12 and the abutment portion 60 are connected to the cup 20 and can move in the horizontal direction (positive direction of the Y axis and negative direction of the Y axis) together with the cup 20. From the time the substrate W is moved in to the time the substrate W is moved out, when the substrate W is observed from above the substrate W, the relative position of the cup 20 with respect to the substrate W is fixed. The cup 20 surrounds the periphery of the substrate W. If the second adsorption portion 12 and the abutment portion 60 can move in the horizontal direction together with the cup 20, then from the time the substrate W is moved in to the time the substrate W is moved out, when the substrate W is observed from above the substrate W, the relative position of the abutment portion 60 with respect to the substrate W is fixed.

[0075] Each of the pair of second adsorption parts 12 is provided with one or more (in Fig.10 The abutment portions 60 are provided with three or more abutment portions 60 in total (two in Fig.10Thereby, the position deviation of the substrate W can be restricted in four directions (X-axis positive direction, X-axis negative direction, Y-axis positive direction, and Y-axis negative direction). In addition, the number and arrangement of the abutting portions 60 are not particularly limited. Even if the total number of the abutting portions 60 is three, the position deviation of the substrate W can be restricted in four directions (X-axis positive direction, X-axis negative direction, Y-axis positive direction, and Y-axis negative direction).

[0076] The vertical wall 21 of the cup 20 is annular, and a pair of connecting plates 23 are provided inside the vertical wall 21. The second adsorption portion 12 and the contact portion 60 are mounted on each of the pair of connecting plates 23. The contact portion 60 is provided at both ends (the positive end in the Y-axis direction and the negative end in the Y-axis direction) in the long-side direction of the connecting plate 23. In addition, the second adsorption portion 12 is provided in the center of the connecting plate 23 in the long-side direction.

[0077] In addition, in the present embodiment, the second adsorption portion 12 and the contact portion 60 are fixed relative to the cup 20, but may be not fixed relative to the cup 20, for example, they may be movable relative to the cup 20 in the vertical direction (Z-axis positive direction and Z-axis negative direction). In addition, the second adsorption portion 12 and the contact portion 60 may also be configured to be attachable and detachable relative to the connecting plate 23.

[0078] like Fig.11 As shown, the abutting portion 60 may have a vertical surface 61 for abutting against the periphery of the substrate W. The vertical surface 61 can limit the positional deviation of the substrate W in the horizontal direction orthogonal to the vertical surface 61. In the present embodiment, the vertical surface 61 is a curved surface along the periphery of the substrate W, but may also be a flat surface. The vertical surface 61 may also be composed of a curved surface and a flat surface.

[0079] The contact portion 60 may also include an inclined surface 62 for contacting the periphery of the substrate W. The inclined surface 62 is inclined toward the radial inner side of the substrate W as it moves downward. When the first lifting portion 14 lowers the substrate W to the second adsorption portion 12, the inclined surface 62 can cause the substrate W to shift toward the radial inner side of the substrate W, thereby guiding the position of the substrate W to the target position.

[0080] When the second adsorption unit 12 adsorbs the substrate W, the contact portion 60 may protrude to a position above the upper surface of the substrate W. As described in detail later, Fig.17 As shown, even if the second adsorption portion 12 is not in contact with the lower surface of the substrate W, the contact portion 60 can limit the positional deviation of the substrate W. The contact portion 60 protrudes to a position above the second adsorption portion 12. The greater the protrusion amount, the more the contact portion 60 can limit the positional deviation of the substrate W in various scenarios.

[0081] Below, refer to Figures 12 to 18 The functions of the abutment portion 60 will be described in order. Fig.12 As shown, the first lifting part 14 lowers the substrate W together with the plurality of lifting pins to lower the substrate W to the second adsorption part 12. The abutment part 60 limits the position deviation of the substrate W caused by the vibration when the substrate W is lowered. The abutment part 60 protrudes to a position above the second adsorption part 12. Before the substrate W contacts the second adsorption part 12, the abutment part 60 can limit the position deviation of the substrate W.

[0082] In addition, the substrate processing device 124 may also include a third lifting unit (not shown) that lifts and lowers the contact portion 60 relative to the second suction unit 12. If the third lifting unit lifts the contact portion 60, the contact portion 60 can limit the positional deviation of the substrate W when the first lifting unit 14 receives the substrate W from the transfer arm of the second transfer device 123. Thereafter, while the first lifting unit 14 lowers the substrate W together with the plurality of lifting pins, the third lifting unit may also lower the contact portion 60. The lowering speed of the contact portion 60 is set to the same speed as the lowering speed of the substrate W. The positional deviation of the substrate W can be always limited during the lowering of the substrate W.

[0083] In addition, if Fig.12 As shown, the second suction unit 12 receives the substrate W from the first lifting unit 14 and starts suction of the substrate W. The contact portion 60 can prevent the position of the substrate W from being shifted due to an impact at the start of suction or deformation of the substrate W accompanying the start of suction.

[0084] Then, if Fig.13 As shown in the figure, in the state where the second adsorption part 12 adsorbs the substrate W, the friction body 50 rubs the lower surface of the substrate W. When the substrate W is relatively displaced laterally with respect to the second adsorption part 12 due to the friction between the friction body 50 and the substrate W, the peripheral edge of the substrate W abuts against the abutting part 60. Therefore, while the friction body 50 rubs the lower surface of the substrate W, the abutting part 60 can limit the positional displacement of the substrate W.

[0085] Then, if Fig.14 As shown, the second adsorption portion 12 releases the adsorption of the substrate W. The abutting portion 60 can prevent the position of the substrate W from being shifted due to an impact during the adsorption release or deformation of the substrate W accompanying the adsorption release.

[0086] Then, if Fig.15 As shown, the second lifting portion 25 (refer to Figure 2 The substrate W is lowered together with the second adsorption part 12 by the second lifting part 25, so as to transfer the substrate W from the second adsorption part 12 to the first adsorption part 11. The contact part 60 can prevent the position of the substrate W from being shifted due to vibration when the substrate W is lowered together with the second adsorption part 12. The second lifting part 25 lowers the contact part 60 together with the second adsorption part 12.

[0087] When the second lifting unit 25 lowers the substrate W together with the second adsorption unit 12 , the first adsorption unit 11 and the second adsorption unit 12 may not adsorb the substrate W so as not to apply a load to the substrate W. Even if the first adsorption unit 11 and the second adsorption unit 12 do not adsorb the substrate W, the contact unit 60 can limit the positional deviation of the substrate W, so adsorption of the substrate W is unnecessary.

[0088] Then, if Fig.15 As shown, the first adsorption unit 11 receives the substrate W from the second adsorption unit 12 and starts adsorption of the substrate W. The abutment unit 60 can prevent the position of the substrate W from being shifted due to the impact at the start of adsorption or the deformation of the substrate W accompanying the start of adsorption. The second lifting unit 25 stops the second adsorption unit 12 at a position lower than the lower surface of the substrate W.

[0089] Then, if Fig.16 As shown in the figure, in the state where the first adsorption part 11 adsorbs the lower surface of the substrate W, the rotation drive part 13 rotates the substrate W together with the first adsorption part 11. At this time, the second lifting part 25 lowers the contact part 60 to a position lower than the lower surface of the substrate W in advance so that the substrate W does not contact the contact part 60. While the rotation drive part 13 rotates the substrate W together with the first adsorption part 11, the contact part 60 does not restrict the position deviation of the substrate W.

[0090] Then, if Fig.17 As shown in FIG. 1 , after the second lifting unit 25 raises the contacting portion 60, the first adsorption portion 11 releases the adsorption of the substrate W. The contacting portion 60 can prevent the position of the substrate W from being shifted due to the impact during the adsorption release or the deformation of the substrate W accompanying the adsorption release. At this time, the second adsorption portion 12 does not contact the lower surface of the substrate W, but forms a gap with the lower surface of the substrate W to prevent the cleaned second area A2 from being contaminated.

[0091] Then, if Fig.18 As shown, the first lifting part 14 lifts the substrate W from the first adsorption part 11. The abutment part 60 can limit the position of the substrate W from being shifted due to vibration when the substrate W is lifted together with the plurality of lifting pins. At this time, the second adsorption part 12 does not contact the lower surface of the substrate W, but forms a gap with the lower surface of the substrate W to prevent the cleaned second area A2 from being contaminated.

[0092] Furthermore, while the first lifting unit 14 is lifting the substrate W relative to the first adsorption unit 11, the second lifting unit 25 or the third lifting unit described above may also lift the contact unit 60 relative to the first adsorption unit 11. The lifting speed of the contact unit 60 is set to the same speed as the lifting speed of the substrate W. It is possible to always limit the positional deviation of the substrate W while the substrate W is lifting.

[0093] The above describes the embodiments of the substrate processing device and the substrate processing method involved in the present disclosure, but the present disclosure is not limited to the above embodiments, etc. Various changes, corrections, substitutions, additions, deletions and combinations can be made within the scope of the claims. These also belong to the technical scope of the present disclosure.

[0094] Description of Reference Numerals

[0095] 124: substrate processing device; 190: control device; 11: first adsorption part; 12: second adsorption part; 50: friction body; A1: first area; A2: second area; W: substrate.

Claims

1. A substrate processing device, comprising: a first adsorption unit that adsorbs a first area of ​​a lower surface of a substrate; A second adsorption portion, which adsorbs a second area of ​​the lower surface of the substrate; and a friction body, which rubs the first area of ​​the lower surface of the substrate when the second adsorption portion adsorbs the substrate, and rubs the second area of ​​the lower surface of the substrate when the first adsorption portion adsorbs the substrate, wherein: The second region is a region located radially outward of the substrate relative to the first region. The substrate processing apparatus includes a contact portion provided on the second adsorption portion and configured to restrict positional deviation of the substrate by contacting the peripheral edge of the substrate.

2. The substrate processing apparatus according to claim 1, wherein: A cup is further provided, the cup surrounding the periphery of the substrate and receiving the processing liquid supplied to the substrate, The second adsorption portion and the contact portion are connected to the cup and are movable together with the cup.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The first region includes the center of the lower surface of the substrate, and the second region is provided with a pair of The second adsorption part is provided with a pair of One or more contact portions are provided on each of the pair of second adsorption portions, and three or more contact portions are provided in total.

4. The substrate processing apparatus according to claim 1 or 2, wherein: When the second adsorption portion adsorbs the substrate, the contact portion protrudes to a position above the upper surface of the substrate.

5. The substrate processing apparatus according to claim 1 or 2, wherein: The contact portion has a vertical surface for contacting with the peripheral edge of the substrate.

6. The substrate processing apparatus according to claim 1 or 2, wherein: A first lifting unit is further provided, wherein the first lifting unit abuts against the lower surface of the substrate to lift and lower the substrate. The contact portion restricts positional deviation of the substrate when the first lifting portion lowers the substrate to the second adsorption portion.

7. The substrate processing apparatus according to claim 6, wherein: When the second adsorption portion receives the substrate from the first lifting portion and starts adsorption of the substrate, the contact portion restricts positional deviation of the substrate.

8. The substrate processing apparatus according to claim 1 or 2, wherein: The contact portion restricts positional displacement of the substrate while the friction body rubs the lower surface of the substrate in a state where the second adsorption portion adsorbs the substrate.

9. The substrate processing apparatus according to claim 1 or 2, wherein: The device further comprises a second lifting unit, the second lifting unit lifting and lowering the contact unit together with the second adsorption unit, When the second lifting unit lowers the substrate together with the second adsorption unit, the abutment unit restricts positional deviation of the substrate.

10. The substrate processing apparatus according to claim 9, wherein: While the second lifting unit lowers the substrate together with the second adsorption unit, the first adsorption unit and the second adsorption unit do not adsorb the substrate.

11. The substrate processing apparatus according to claim 10, wherein: The contact portion restricts positional deviation of the substrate when the first adsorption portion receives the substrate from the second adsorption portion and starts adsorption of the substrate.

12. The substrate processing apparatus according to claim 1 or 2, wherein: The device further comprises a second lifting unit, the second lifting unit lifting and lowering the contact unit together with the second adsorption unit, When the first adsorption portion releases adsorption of the substrate, the second adsorption portion does not come into contact with the lower surface of the substrate, and positional deviation of the substrate is restricted by the contact portion.

13. The substrate processing apparatus according to claim 12, wherein: A first lifting unit is further provided, wherein the first lifting unit abuts against the lower surface of the substrate to lift and lower the substrate. When the first lifting portion lifts the substrate from the first adsorption portion, the second adsorption portion does not contact the lower surface of the substrate, and positional deviation of the substrate is restricted by the contact portion.

14. The substrate processing apparatus according to claim 1 or 2, wherein: The invention further includes a cleaning unit configured to clean the upper surface of the substrate when the rubbing body rubs the second region on the lower surface of the substrate in a state where the first adsorption unit adsorbs the substrate.

15. A substrate processing method, using the substrate processing apparatus according to claim 1 or 2 to process the substrate, the substrate processing method comprising: Positional deviation of the substrate is restricted by causing the abutment portion to abut against the peripheral edge of the substrate.

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