Packaging structure with interconnected channels and method of making the same

Abstract

The application relates to the technical field of electronic packaging, and particularly discloses a packaging structure with interconnection channels and a preparation method thereof, wherein the packaging structure with interconnection channels comprises a first glass substrate, the top surface of the first glass substrate is provided with an embedded groove; a glass conversion block is installed in the embedded groove; a plurality of processing units are arranged on the top surface of the first glass substrate and are interconnected through the glass conversion block; the first glass substrate is further provided with a plurality of first glass through holes and conductive metals filled in the first glass through holes; the processing units are further interconnected with the conductive metals in the first glass through holes; the packaging structure realizes a highly integrated, high-performance and high-reliability packaging solution, can effectively resist the influence of thermal cycles and mechanical stress, solves the problems of solder point fracture or substrate warping of the packaging structure under the action of temperature change or mechanical stress during use, and greatly improves the reliability and durability of products.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic packaging, in particular to a packaging structure with interconnection channels and a preparation method thereof. BACKGROUND

[0002] With the continuous development of electronic products, the requirements for packaging structures are also getting higher and higher. Traditional packaging structures usually use a single substrate to directly mount multiple processing units on the substrate.

[0003] EMIB is a 2.5D packaging technology led by Intel, which uses multiple embedded bridge chips (Silicon Bridge) to realize high-speed interconnection between chiplets.

[0004] The packaging body of EMIB generally embeds a silicon bridge on a substrate, and uses the silicon bridge to realize the interconnection of multiple different chips; however, the substrate used for embedding the silicon bridge generally adopts materials such as ABF, BT, FR-4, etc. The difference between the thermal expansion coefficients of the substrate and the silicon bridge embedded therein is large, which causes the packaging body to be prone to problems such as solder joint fracture or substrate warping under the action of temperature change or mechanical stress during use, affecting the long-term reliability of the system.

[0005] At present, there is no effective technical solution to the above problems. SUMMARY

[0006] The purpose of the present application is to provide a packaging structure with interconnection channels and a preparation method thereof to solve the problems of solder joint fracture and substrate warping of the packaging structure.

[0007] In a first aspect, the present application provides a packaging structure with interconnection channels, comprising:

[0008] a first glass substrate having an embedded groove on the top surface thereof;

[0009] a glass conversion block installed in the embedded groove;

[0010] a plurality of processing units, each of which is arranged on the top surface of the first glass substrate and interconnected through the glass conversion block;

[0011] The first glass substrate further has a plurality of first glass vias and conductive metal filled in the first glass vias, and the processing units are further interconnected with the conductive metal in the first glass vias.

[0012] The packaging structure with interconnected channels of the application combines a glass substrate, a glass conversion block and a plurality of processing units, realizes a highly integrated, high-performance and high-reliability packaging solution, can effectively resist the influence of thermal cycles and mechanical stress, solves the problems of solder point fracture or substrate warping of the packaging structure under the action of temperature change or mechanical stress in use, and greatly improves the reliability and durability of the product.

[0013] The packaging structure with interconnected channels, wherein the bottom of the embedded slot is provided with a first metal layer.

[0014] In this example, the first metal layer plays a good thermal bridge role between the glass conversion block and the substrate, improves the heat conduction performance, can help to more effectively dissipate the heat generated by the glass conversion block and the processing unit, can quickly conduct the heat generated by the glass conversion block to the first glass substrate, and then dissipate it through the heat dissipation system, which helps to keep the chip in a suitable working temperature range and helps to maintain the temperature stability of the entire packaging structure to prevent performance degradation or damage caused by overheating; in addition, the first metal layer also plays an important role in electromagnetic shielding, which can effectively reduce electromagnetic interference and improve signal integrity during high-frequency signal transmission.

[0015] The packaging structure with interconnected channels, wherein the glass conversion block comprises, from top to bottom, an insulating layer, a glass conversion block wiring layer, a glass conversion block substrate and an adhesive layer.

[0016] In this example, the specific structure of the glass conversion block plays a key role in solving the problem of efficient signal transmission, the insulating layer effectively isolates external interference and protects the internal circuit, the glass conversion block wiring layer realizes high-speed and low-loss signal transmission through optimized wiring design, the glass conversion block substrate not only provides mechanical support but also can integrate additional functions to enhance the performance of the glass conversion block, and the adhesive layer ensures the stability and reliability of the entire structure.

[0017] The packaging structure with interconnected channels, wherein the adhesive layer and the insulating layer are made of the same material.

[0018] The packaging structure with interconnected channels, wherein the top surface of the glass conversion block further has a solder pad surrounded by a solder resist layer.

[0019] The packaging structure with interconnected channels, wherein the processing unit is one of FPGA, GPU, CPU, memory, I / O chip and EIC.

[0020] The packaging structure with interconnected channels, wherein the packaging structure with interconnected channels further comprises:

[0021] A second glass substrate is fixed on the top surface of the first glass substrate, and has a plurality of second glass through holes corresponding to the first glass through holes one by one, and a plurality of third glass through holes corresponding to the contacts of the glass transition block, the second glass through holes and the third glass through holes being filled with conductive metal.

[0022] The packaging structure with interconnection channels, wherein the middle part of the bottom surface of the second glass substrate has a dam extending downward, the dam is inserted into the embedded slot, and the inner and outer walls are in contact with the outer periphery of the glass transition block and the inner wall of the embedded slot, respectively.

[0023] The packaging structure with interconnection channels, wherein the thickness of the part of the second glass substrate inside the dam is less than the thickness of the part outside the dam.

[0024] In a second aspect, the application further provides a preparation method of a packaging structure with interconnection channels, for manufacturing the packaging structure with interconnection channels provided in the first aspect, the preparation method comprising the following steps:

[0025] Preparation of the first glass substrate, and punching the first glass substrate to form an embedded slot and a plurality of first glass through holes;

[0026] Filling the first glass through holes with conductive metal;

[0027] Preparation of the glass transition block according to the bonding requirements of the processing units, and fixing the glass transition block in the embedded slot;

[0028] Bonding a plurality of processing units above the first glass substrate, so that the plurality of processing units are interconnected with the conductive metal in the first glass through holes, and the plurality of processing units are interconnected through the glass transition block.

[0029] As can be seen from the above, the packaging structure with interconnection channels and the preparation method thereof provided by the application, wherein the packaging structure with interconnection channels is made by the preparation method of the packaging structure with interconnection channels, which combines the glass substrate, the glass transition block and the plurality of processing units, realizes a highly integrated, high-performance and high-reliability packaging solution, can effectively resist the influence of thermal cycle and mechanical stress, solves the problems of solder point fracture or substrate warping of the packaging structure under the action of temperature change or mechanical stress in use, and greatly improves the reliability and durability of the product. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 The structural schematic diagram of the packaging structure with interconnection channels provided by some embodiments of the application.

[0031] Figure 2A structural diagram of a package structure with interconnected channels is provided for some embodiments of the present application.

[0032] Figure 3 A structural diagram of a glass transition block is provided.

[0033] Figure 4 A structural diagram of a package structure with interconnected channels is provided for some embodiments of the present application.

[0034] Figure 5 A structural diagram of a package structure with interconnected channels is provided for some embodiments of the present application.

[0035] Figure 6 A flow chart of a method for manufacturing a package structure with interconnected channels is provided for some embodiments of the present application.

[0036] Reference signs: 1, first glass substrate; 2, glass transition block; 3, processing unit; 4, first metal layer; 5, solder resist layer; 6, solder pad; 7, second glass substrate; 8, second metal layer; 9, third glass substrate; 11, embedded groove; 12, first glass via; 21, insulating layer; 22, glass transition block wiring layer; 23, glass transition block substrate; 24, adhesive layer; 71, second glass via; 72, third glass via; 73, dam; 91, fourth glass via; 92, fifth glass via. DETAILED DESCRIPTION

[0037] Embodiments of the present application are described in detail below with reference to the attached drawing figures, wherein the same or like reference numerals and letters throughout the several views denote the same or like elements or components. The embodiments described below are exemplary and are not intended to limit the present application, which can be applied to other embodiments as well.

[0038] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0039] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0040] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0041] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplifying the present application, components and arrangements of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but those of ordinary skill in the art can realize the application of other processes and / or the use of other materials.

[0042] In a first aspect, refer to Figures 1-5 Some embodiments of the present application provide a packaging structure with interconnection channels, the packaging structure with interconnection channels comprising:

[0043] A first glass substrate 1 has an embedded groove 11 on the top surface thereof;

[0044] A glass conversion block 2 is installed in the embedded groove 11;

[0045] A plurality of processing units 3 are arranged on the top surface of the first glass substrate 1 and interconnected through the glass conversion block 2;

[0046] The first glass substrate 1 further has a plurality of first glass vias 12 and conductive metals filled in the first glass vias 12, and the processing units 3 are further interconnected with the conductive metals in the first glass vias 12.

[0047] Specifically, the packaging structure with interconnection channels of the embodiments of the present application belongs to the improved application of EMIB (Embedded Multi-Die Interconnect Bridge) technology, and the packaging structure with interconnection channels of the embodiments of the present application uses glass as the substrate material of the packaging body. The first glass substrate 1 not only has good insulation and flatness, but also can form precise embedded grooves 11 and vias through a specific process, which lays a foundation for subsequent installation of the glass conversion block 2 and interconnection of the processing units 3. The glass conversion block 2 serves as an interconnection medium between the plurality of processing units 3 and undertakes an important task of signal transmission, mainly used to provide a short-distance, low-loss interconnection path to reduce signal delay and interference. The packaging structure with interconnection channels of the embodiments of the present application realizes efficient interconnection between the plurality of processing units 3 by using the combination of the first glass substrate 1 and the glass conversion block 2. This structure not only improves the packaging density, but also significantly improves the signal transmission efficiency, providing a solid hardware foundation for high-performance computing and data processing.

[0048] More specifically, unlike the traditional EMIB technology, the first glass substrate 1 replaces the substrate made of ABS, BT or FR-4 and other materials, the material of which is consistent with the main material of the glass conversion block 2, so that the coefficient of thermal expansion (CTE) is basically consistent with that of the glass conversion block 2, which can effectively resist the influence of thermal cycle and mechanical stress. In the long-term reliability test, the packaging structure with interconnection channels of the embodiment of the application can effectively solve the problems of solder joint fracture or substrate warping of the packaging structure under the action of temperature change or mechanical stress in use, improve the reliability and durability of the product, and exhibit excellent stability. Even under extreme temperature and humidity conditions, it can also maintain good electrical performance.

[0049] More specifically, the use of the first glass substrate 1 also improves the heat dissipation performance of the packaging structure, which is conducive to maintaining the stable working temperature of the processing unit 3.

[0050] More specifically, considering that the glass material doped with different materials will still exhibit a large difference in the coefficient of thermal expansion, therefore, in the embodiment of the application, the first glass substrate 1 is preferably made of BF33 glass or Pyrex 7740 glass, which can more effectively avoid problems such as solder joint fracture or substrate warping.

[0051] It should be noted that the first glass substrate 1 is provided with solder or pads connected with the conductive metal in the first glass via hole 12, which is used to solder and fix the packaging structure with interconnection channels of the embodiment of the application in the circuit board to realize the installation of the processing unit 3.

[0052] It should be noted that in the embodiment of the application, the processing unit 3 is preferably interconnected with the conductive metal in the first glass via hole 12 and the glass conversion block 2 by soldering.

[0053] It should be noted that the glass conversion block 2 (Silicon Bridge) is used to realize the electrical connection between different processing units 3, which provides short-distance high-density interconnection, so that the data transmission bandwidth between chips can be greatly improved to meet the demand of high-performance computing applications. The processing unit 3 can be various chips or chip components. The packaging structure with interconnection channels of the embodiment of the application realizes the function of heterogeneous integration based on the interconnection of the processing unit 3 by the glass conversion block 2.

[0054] In general, the packaging structure with interconnection channels of the embodiment of the application combines the glass substrate, the glass conversion block 2 and the plurality of processing units 3, realizes a highly integrated, high-performance and high-reliability packaging solution, can effectively resist the influence of thermal cycle and mechanical stress, solves the problems of solder joint fracture or substrate warping of the packaging structure under the action of temperature change or mechanical stress in use, and greatly improves the reliability and durability of the product.

[0055] In some preferred embodiments, as shown in Figure 2 The bottom of the embedding groove 11 is provided with a first metal layer 4.

[0056] In the implementation of the packaging structure with interconnected channels, the present application finds that there may be some limitations in only installing the glass conversion block 2 in the embedding groove 11 of the first glass substrate 1. For example, the limited contact area between the glass conversion block 2 and the first glass substrate 1 may affect the stability and heat dissipation effect of the structure. In addition, during high-frequency signal transmission, problems of signal interference and loss may occur.

[0057] Specifically, the practice of connecting the glass conversion block 2 with the first metal layer 4 provided at the bottom of the embedding groove 11 can enhance the connection strength between the glass conversion block 2 and the first glass substrate 1, mainly manifested as that it can form a stronger adhesive effect with the bottom of the glass conversion block 2, improve the stability and reliability of the entire packaging structure, and effectively reduce the risk of damage or falling of the glass conversion block 2 caused by external factors such as vibration and impact; secondly, the first metal layer 4 plays a good thermal bridge role between the glass conversion block 2 and the substrate, improves the heat conduction performance, can help dissipate the heat generated by the glass conversion block 2 and the processing unit 3, can quickly conduct the heat generated by the glass conversion block 2 to the first glass substrate 1, and then dissipate it through the heat dissipation system, which helps to keep the chip in a suitable working temperature range, and helps to maintain the temperature stability of the entire packaging structure, preventing overheating of the packaging structure causing performance degradation or damage; in addition, the first metal layer 4 also plays an important role in electromagnetic shielding, which can effectively reduce electromagnetic interference and improve signal integrity during high-frequency signal transmission.

[0058] More specifically, the first metal layer 4 can be implemented by using a variety of materials and processes. For example, metal materials with excellent electrical conductivity such as copper, aluminum or gold can be used, and in the embodiments of the present application, copper is preferred. These metals can be deposited on the bottom of the embedding groove 11 by methods such as evaporation, sputtering or electroplating.

[0059] In some preferred embodiments, as shown in Figure 3 The glass conversion block 2 includes, from top to bottom, an insulating layer 21, a glass conversion block wiring layer 22, a glass conversion block substrate 23 and a bonding layer 24.

[0060] In particular, the glass transition block 2 serves as a key component connecting multiple processing units 3, and its internal structure directly affects the performance of the entire packaging structure. In the embodiments of the present application, the glass transition block 2 includes four key layers: an insulating layer 21, a glass transition block wiring layer 22, a glass transition block substrate 23, and an adhesive layer 24. This multi-layer structure design not only effectively improves the quality of signal transmission, but also ensures the firm connection between the glass transition block 2 and the glass substrate; wherein the insulating layer 21 is located at the uppermost layer of the glass transition block 2, mainly used for electrical isolation and protection, which can effectively prevent signal interference and protect the wiring of the lower layer from the influence of the external environment; the glass transition block wiring layer 22 is responsible for the actual signal transmission task, usually made of high-conductivity metal materials (such as copper or aluminum), and the design of the wiring layer needs to consider factors such as signal integrity and impedance matching, and combined with the bonding requirements of the processing unit 3 to design the wiring, in order to ensure the effective transmission of high-speed signals; the glass transition block substrate 23 serves as the supporting basis of the entire glass transition block 2 structure; the adhesive layer 24 is located at the bottom of the glass transition block 2, responsible for firmly fixing the glass transition block 2 in the embedded groove 11 of the first glass substrate 1, and then fixed on the first metal layer 4 through adhesion.

[0061] It should be noted that the glass transition block 2 has contacts for interconnecting the processing units 3, which are located on the insulating layer 21 and connected with the glass transition block wiring layer 22 through the insulating layer 21.

[0062] More specifically, the adhesive layer 24 needs to have good adhesion and thermal stability, and in the embodiments of the present application, it is preferred to use epoxy resin or special conductive glue.

[0063] More specifically, the specific structure of the above-mentioned glass transition block 2 plays a key role in solving the problem of efficient signal transmission. Its insulating layer 21 effectively isolates external interference and protects internal circuits, its glass transition block wiring layer 22 realizes high-speed and low-loss signal transmission through optimized wiring design, its glass transition block substrate 23 not only provides mechanical support but also can integrate additional functions, enhancing the performance of the glass transition block 2, and its adhesive layer 24 ensures the stability and reliability of the entire structure.

[0064] In some preferred embodiments, the adhesive layer 24 and the insulating layer 21 are made of the same material.

[0065] Specifically, the insulation layer 21 and the adhesive layer 24 are parallel to each other and are located on the top surface and the top surface of the glass transition block 2 structure respectively. When the temperature changes, the insulation layer 21 and the adhesive layer 24 corresponding to the two interfaces will generate stress in opposite directions on the glass transition block 2 structure. If the adhesive layer 24 and the insulation layer 21 are made of different materials, when the temperature changes, the two interfaces of the glass transition block 2 structure will generate different stresses, causing asymmetric shrinkage or expansion, and further causing the glass transition block 2 to have problems such as interface delamination, cracking, and warping. The adhesive layer 24 and the insulation layer 21 in the packaging structure with interconnection channels in the embodiment of the application are made of the same material, which can offset the stress of the two interfaces in the glass transition block 2 structure, and further improve the reliability and durability of the product.

[0066] More specifically, in the embodiment of the application, the adhesive layer 24 and the insulation layer 21 preferably have the same thickness to more effectively offset the stress.

[0067] In some preferred embodiments, as shown in Figure 1 and 2 The top surface of the glass transition block 2 also has a solder pad 6 surrounded by a solder resist layer 5.

[0068] Specifically, the introduction of the solder resist layer 5 solves the problem that the traditional solder pad 6 is easily affected by the external environment. It acts as a protective barrier, effectively preventing the solder from spreading to the unwanted area during the soldering process when the processing unit 3 is interconnected by soldering, thereby ensuring the accuracy and reliability of the soldering. At the same time, the solder resist layer 5 also plays the role of insulation and moisture-proof, further improving the stability and life of the entire packaging structure.

[0069] It should be noted that the solder pad 6 is multiple and corresponds one-to-one to the contacts of the glass transition block 2.

[0070] In some preferred embodiments, the processing unit 3 is one of FPGA (Field Programmable Gate Array), GPU (Graphics Processing Unit), CPU (Central Processing Unit), memory, I / O chip, EIC (Edge Intelligent Chip), etc.

[0071] Specifically, the packaging structure with interconnection channels in the embodiment of the application realizes the interconnection between different processing units 3 by using the glass transition block 2, and provides a flexible solution for the integration of different types of processing units 3. By selecting appropriate combinations of processing units 3, a high-performance computing system suitable for different application scenarios can be constructed.

[0072] In some preferred embodiments, as shown in Figure 4 The packaging structure with interconnection channels further comprises:

[0073] The second glass substrate 7 is fixed on the top surface of the first glass substrate 1, and has a plurality of second glass through holes 71 corresponding to the first glass through holes 12 one by one, and a plurality of third glass through holes 72 corresponding to the contacts of the glass conversion block 2, and the second glass through holes 71 and the third glass through holes 72 are filled with conductive metal.

[0074] Specifically, in this embodiment, the processing unit 3 is arranged on the top surface of the second glass substrate 7, which is interconnected with the conductive metal in the first glass through holes 12 by connecting the conductive metal in the second glass through holes 71, and is interconnected with the glass conversion block 2 by connecting the conductive metal in the third glass through holes 72.

[0075] More specifically, the second glass substrate 7 provides an additional protective layer for the entire packaging structure, enhances the stability and anti-interference ability of the structure, cooperates with the first glass substrate 1 to form a closed space for the fixation of the glass conversion block 2, effectively protects the internal glass conversion block 2, and the arrangement of the third glass through holes 72 is specifically for the contacts of the glass conversion block 2, providing a direct external connection channel for the glass conversion block 2.

[0076] More specifically, the conductive metal can be copper, aluminum or other metal materials with good conductivity, preferably copper, and the filling process can adopt electroplating, physical vapor deposition (PVD) or chemical vapor deposition (CVD) method.

[0077] More specifically, the material of the second glass substrate 7 is the same as that of the first glass substrate 1.

[0078] More specifically, based on the multi-layer glass structure surrounding the glass conversion block 2 from top to bottom, the ability of the packaging structure to resist thermal cycling and mechanical stress can be further improved, which is reflected in two aspects: the second glass substrate 7 and the first glass substrate 1 located above and below the glass conversion block 2 can generate stress in opposite directions; on the other hand, the first glass substrate 1 and the second glass substrate 7 can produce equivalent heat dissipation effect on the upper and lower surfaces of the glass conversion block 2 to avoid local temperature difference caused by uneven heat dissipation of the glass conversion block 2.

[0079] It should be noted that the second glass substrate 7 is bonded to the first glass substrate 1.

[0080] More specifically, in this embodiment, as shown in Figure 4 the top surface of the second glass substrate 7 also has a solder pad surrounded by a solder mask.

[0081] In some preferred embodiments, the bottom surface of the second glass substrate 7 has a dam 73 extending downward, which is inserted into the embedding groove 11, and the inner and outer walls are in contact with the outer periphery of the glass conversion block 2 and the inner wall of the embedding groove 11, respectively.

[0082] Specifically, the dam 73 of the second glass substrate 7 not only enhances the fixing effect of the glass conversion block 2, but also provides an additional protective layer for the glass conversion block 2, effectively preventing the influence of the external environment on the glass conversion block 2.

[0083] More specifically, the design of the dam 73 can have various implementations. For example, a precise glass etching technique can be used to directly form the dam 73 structure on the second glass substrate 7. Another method is to use a special glass forming process to directly shape the required dam 73 shape when making the second glass substrate 7. In addition, it is also possible to consider using high-strength epoxy resin or other suitable materials to form the dam 73 at the bottom of the second glass substrate 7 through precise mold forming technology.

[0084] More specifically, in some embodiments, the inner and outer walls of the dam 73 can be coated with a thin layer of elastic material, such as silicone, to further enhance the sealing effect between the dam 73 and the glass conversion block 2 and the embedded groove 11, while also being able to buffer any small stresses that may exist, improving the stability and reliability of the overall structure.

[0085] More specifically, the contact between the inner wall of the dam 73 and the outer periphery of the glass conversion block 2 can prevent the glass conversion block 2 from moving in the horizontal direction, enhancing the stability of the glass conversion block 2.

[0086] In some preferred embodiments, the thickness of the portion of the second glass substrate 7 located inside the dam 73 is less than the thickness of the portion of the second glass substrate 7 located outside the dam 73.

[0087] Specifically, as shown in Figure 4 In this embodiment, the height of the glass conversion block 2 is greater than the depth of the embedded groove 11, the thickness of the portion of the second glass substrate 7 located inside the dam 73 is less than the thickness of the portion of the second glass substrate 7 located outside the dam 73, and the top surface of the second glass substrate 7 can be kept flat, facilitating the flat installation of multiple processing units 3, so that the entire packaging structure can be more compact.

[0088] As shown in Figure 5 In some other embodiments, the packaging structure with interconnection channels further comprises:

[0089] A second metal layer 8 is provided on the top surface of the second glass substrate 7 and located within the area enclosed by the contacts of the glass conversion block 2;

[0090] A third glass substrate 9 is provided on the top surface of the second glass substrate 7 and has a slot in the middle, and the second metal layer 8 is located in the slot;

[0091] The third glass substrate 9 also has a plurality of fourth glass vias 91 corresponding to the first glass vias 12 one-to-one and a plurality of fifth glass vias 92 corresponding to the contacts of the glass transition block 2, the fourth glass vias 91 and the fifth glass vias 92 being filled with conductive metal.

[0092] Specifically, the second metal layer 8 is the same material as the first metal layer 4.

[0093] More specifically, the second metal layer 8 is located above the glass transition block 2, which can further improve the heat conduction performance of the packaging structure with interconnection channels of the embodiments of the application, further reduce electromagnetic interference, improve signal integrity, and cooperate with the first metal layer 4 to avoid the transmission of the glass transition block 2 being interfered by signals above and below.

[0094] More specifically, in this embodiment, the top surface of the third glass substrate 9 also has a solder pad surrounded by a solder mask.

[0095] In a second aspect, referring to Figure 6 Some embodiments of the application also provide a preparation method of a packaging structure with interconnection channels for manufacturing the packaging structure with interconnection channels provided in the first aspect, the preparation method comprising the following steps:

[0096] S1, preparing a first glass substrate 1 and punching the first glass substrate 1 to form an embedded groove 11 and a plurality of first glass vias 12;

[0097] S2, filling the first glass vias 12 with conductive metal;

[0098] S3, preparing a glass transition block 2 according to the bonding requirements of the processing units 3 and fixing the glass transition block 2 in the embedded groove 11;

[0099] S4, bonding a plurality of processing units 3 above the first glass substrate 1 so that the plurality of processing units 3 are interconnected with the conductive metal in the first glass vias 12 and the plurality of processing units 3 are interconnected through the glass transition block 2.

[0100] The packaging structure with interconnection channels prepared by the preparation method of the packaging structure with interconnection channels of the embodiments of the application combines the glass substrate, the glass transition block 2 and the plurality of processing units 3, realizes a highly integrated, high-performance and high-reliability packaging solution, can effectively resist the influence of thermal cycling and mechanical stress, solves the problems of solder joint fracture or substrate warping of the packaging structure under the action of temperature change or mechanical stress during use, and greatly improves the reliability and durability of the product.

[0101] In the description of the specification, the description of the terms "one embodiment", "certain embodiments", "exemplary embodiment", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the specification, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0102] The above only describes some embodiments of the present application. For those skilled in the art, without departing from the inventive concept, several modifications and improvements can be made, which are within the scope of protection of the present application.

Claims

1. A packaging structure with interconnect channels, characterized in that, The package structure with interconnect channels includes: The first glass substrate has an embedding groove on its top surface; The glass conversion block is installed in the embedded groove; Multiple processing units are disposed on the top surface of the first glass substrate and interconnected through the glass conversion block; The first glass substrate also has a plurality of first glass through holes and a conductive metal filled in the first glass through holes, and the processing unit is also interconnected with the conductive metal in the first glass through holes; The package structure with interconnect channels further includes: The second glass substrate is fixed on the top surface of the first glass substrate and has a plurality of second glass through holes corresponding one-to-one with the first glass through holes and a plurality of third glass through holes whose positions correspond to the contacts of the glass switching block. The second glass through holes and the third glass through holes are filled with conductive metal. The second glass substrate has a downwardly extending dam at the center of its bottom surface. The dam is inserted into the embedding groove, and its inner and outer walls are in contact with the outer periphery of the glass conversion block and the inner wall of the embedding groove, respectively.

2. The packaging structure with interconnect channels according to claim 1, characterized in that, The bottom of the embedding groove is provided with a first metal layer.

3. The packaging structure with interconnect channels according to claim 1, characterized in that, The glass transition block includes, from top to bottom, an insulating layer, a glass transition block wiring layer, a glass transition block substrate, and an adhesive layer.

4. The packaging structure with interconnect channels according to claim 3, characterized in that, The adhesive layer and the insulating layer are made of the same material.

5. The packaging structure with interconnect channels according to claim 3, characterized in that, The top surface of the glass transition block also has pads surrounded by a solder resist layer.

6. The packaging structure with interconnect channels according to claim 1, characterized in that, The processing unit is one of FPGA, GPU, CPU, memory, I / O chip, and EIC.

7. The packaging structure with interconnect channels according to claim 1, characterized in that, The thickness of the portion of the second glass substrate located inside the dam is less than the thickness of the portion located outside the dam.

8. A method for fabricating a packaging structure with interconnect channels, used to manufacture the packaging structure with interconnect channels as described in any one of claims 1-7, characterized in that, The preparation method includes the following steps: Prepare a first glass substrate and drill holes in the first glass substrate to form an embedding groove and a plurality of first glass through holes; The first glass through-hole is filled with conductive metal; A glass conversion block is prepared according to the bonding requirements of the processing unit, and the glass conversion block is fixed in the embedding groove; Multiple processing units are bonded to the top of the first glass substrate to interconnect the multiple processing units with the conductive metal in the first glass via and to interconnect the multiple processing units through the glass transition block.

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