Semiconductor device

Abstract

Embodiments provide a semiconductor device that improves transmission characteristics and suppresses an increase in a mounting area. According to one embodiment, a semiconductor device includes: a substrate; a first transistor and a second transistor respectively provided above the first surface of the substrate, the sources of the first transistor and the second transistor being connected in common; a light-emitting element provided above the first surface of the substrate and having an anode electrode and a cathode electrode; a light-receiving element which is provided above the first surface of the substrate and which turns the first transistor and the second transistor into an ON state or an OFF state in accordance with the light-emitting state of the light-emitting element; a first filter element provided above the first surface of the substrate and connected to the anode electrode of the light-emitting element; and a second filter element provided above the first surface of the substrate and connected to the cathode electrode of the light-emitting element.

Description

[0001] Reference to related applications

[0002] This application claims priority based on Japanese Patent Application No. 2023-128355 (filing date: August 7, 2023), and the present application incorporates the entire contents of the basic application by reference. Technical Field

[0003] Embodiments relate to a semiconductor device. Background Art

[0004] As a semiconductor device, a photorelay device including a light emitting element and a light receiving element is known. The photorelay device is a contactless relay used for transmission of AC signals and DC signals. Summary of the invention

[0005] An object of the present invention is to provide a semiconductor device that improves transmission characteristics and suppresses an increase in mounting area.

[0006] The semiconductor device of the embodiment comprises: a substrate; a first transistor and a second transistor, which are respectively arranged above the first surface of the above-mentioned substrate and whose sources are connected to be in common; a light-emitting element, which is arranged above the above-mentioned first surface of the above-mentioned substrate and has an anode electrode and a cathode electrode; a light-receiving element, which is arranged above the above-mentioned first surface of the above-mentioned substrate and turns on or off the above-mentioned first transistor and the above-mentioned second transistor according to the light-emitting state of the above-mentioned light-emitting element; a first filter element, which is arranged above the above-mentioned first surface of the above-mentioned substrate and is connected to the above-mentioned anode electrode of the above-mentioned light-emitting element; and a second filter element, which is arranged above the above-mentioned first surface of the above-mentioned substrate and is connected to the above-mentioned cathode electrode of the above-mentioned light-emitting element. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 This is a circuit diagram for explaining an example of a circuit configuration of a semiconductor device according to an embodiment.

[0008] Figure 2 It is a perspective view showing an example of the structure of the semiconductor device according to the embodiment.

[0009] Figure 3 It is a top view showing an example of a planar structure of a semiconductor device according to an embodiment.

[0010] Figure 4 It is a perspective view showing an example of the structure of a semiconductor device according to a first modification.

[0011] Figure 5 It is a perspective view showing an example of the structure of a semiconductor device according to a second modification.

[0012] Figure 6It is a top view showing an example of a planar structure of a semiconductor device according to a second modification.

[0013] Figure 7 It is a top view showing an example of a planar structure of a semiconductor device according to a third modification.

[0014] Figure 8 It is a perspective view showing an example of the structure of a semiconductor device according to a fourth modification.

[0015] Fig. 9 It is a top view showing an example of a planar structure of a semiconductor device according to a fourth modification.

[0016] Fig.10 It is a top view showing an example of a planar structure of a semiconductor device according to another example.

[0017] Description of Reference Numerals

[0018] 1…semiconductor device; 20a, 20b…MOSFET; 10a, 10b, 70, 71, 70a, 70b, 71a, 71b…electrodes; 30…support table; 40…light-receiving element; 50…adhesive layer; 60…light-emitting element; 80, 81, 82a, 82b…terminals; B…substrate; W1 to W7…wiring. DETAILED DESCRIPTION

[0019] Hereinafter, the embodiments will be described with reference to the accompanying drawings. In addition, in the following description, the same reference numerals are used for components having the same functions and structures. In addition, the dimensions and ratios of the accompanying drawings are not necessarily the same as those in reality.

[0020] 1. Implementation Method

[0021] A semiconductor device according to an embodiment will be described.

[0022] The semiconductor device of the embodiment is, for example, a photorelay device for transmitting an AC signal or a DC signal. The semiconductor device of the embodiment is, for example, a package of an electronic component. In the following description, an AC signal and a DC signal are also simply referred to as signals.

[0023] use Figure 1 An example of a circuit configuration of a semiconductor device according to an embodiment will be described. Figure 1 This is a circuit diagram for explaining an example of a circuit configuration of a semiconductor device according to an embodiment.

[0024] The semiconductor device 1 includes terminals 80, 81, 82a, and 82b. Voltage for driving the semiconductor device 1 is supplied to the terminals 80 and 81. While the semiconductor device 1 is being driven, the semiconductor device 1 can transmit a signal through the terminals 82a and 82b.

[0025] The semiconductor device 1 further includes MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistor) 20a and 20b, a light receiving element 40, a light emitting element 60, and ferrite beads (filter elements) FB1 and FB2. MOSFETs 20a and 20b are, for example, enhanced N-channel MOSFETs. The light receiving element 40 is, for example, a sensor including a PDA (Photo Diode Array) or a phototransistor. The following describes a case where the light receiving element 40 includes a PDA. The light emitting element 60 is, for example, an LED (Light Emitting Diode).

[0026] The light emitting element 60 is connected to the terminals 80 and 81 via the ferrite beads FB1 and FB2, respectively. More specifically, the anode electrode of the light emitting element 60 is connected to the terminal 80, for example, via the ferrite bead FB1. The cathode electrode of the light emitting element 60 is connected to the terminal 81, for example, via the ferrite bead FB2. The light emitting element 60 is driven by the power supplied to the terminals 80 and 81. As a result, the light emitting state of the light emitting element 60 becomes an on state (lit state) or an off state (extinguished state).

[0027] The light receiving element 40 includes, for example, a plurality of photodiodes 40a connected in series and a control circuit 40b. The number of the photodiodes 40a is, for example, several to several dozen. Both ends of the plurality of photodiodes 40a connected in series are connected to the control circuit 40b, respectively. The control circuit 40b uses the photoelectromotive force generated by the plurality of photodiodes 40a to turn on the MOSFETs 20a and 20b.

[0028] The gate of MOSFET 20a and the gate of MOSFET 20b are connected to the anode electrode of light receiving element 40. The source of MOSFET 20a and the source of MOSFET 20b are connected to the cathode electrode of light receiving element 40. The drain of MOSFET 20a is connected to terminal 82a. The drain of MOSFET 20b is connected to terminal 82b.

[0029] In the circuit structure of the semiconductor device 1 described above, when the light emitting element 60 changes from the off state to the on state, light is radiated from the light emitting element 60. The light receiving element 40 uses the voltage generated by the photoelectric effect using the light of the light emitting element 60 to change the MOSFETs 20a and 20b from the off state to the on state. Thus, the terminals 82a and 82b are electrically connected. In this way, the semiconductor device 1 transmits a signal supplied to one of the terminals 82a and 82b to the other of the terminals 82a and 82b via the MOSFETs 20a and 20b.

[0030] When the light emitting element 60 changes from the on state to the off state, the light emitting element 60 stops emitting light. Thus, the MOSFETs 20a and 20b change from the on state to the off state. In this way, the semiconductor device 1 electrically insulates the terminals 82a and 82b.

[0031] Next, use Figure 2 The structure of the semiconductor device 1 according to the embodiment will be described. Figure 2 1 is a perspective view showing an example of the structure of a semiconductor device according to an embodiment. In the following description, the Z direction corresponds to a direction perpendicular to the surface of a substrate forming the semiconductor device 1. The X direction is a direction parallel to the surface of the substrate. The Y direction is a direction parallel to the surface of the substrate and perpendicular to the X direction. Figure 2 In order to facilitate understanding of the drawings, the wiring diagram is omitted. The wiring diagram will be described in detail later.

[0032] The semiconductor device 1 further includes a substrate B, electrodes (pads) 10a, 10b, 70, and 71, a support 30, an adhesive layer 50, and a sealing material S. In the following description, the side of the substrate B and the MOSFET 20a on which the MOSFET 20a is provided is referred to as the upper side along the Z direction. In addition, the side of the substrate B and the MOSFET 20a on which the substrate B is provided is referred to as the lower side along the Z direction.

[0033] The substrate B is, for example, a circuit substrate using BT (bismaleimide triazine) resin or a flexible substrate (FPC: Flexible Printed Circuits) using polyimide.

[0034] The electrodes 10a, 10b, 70 and 71 are provided on the upper surface of the substrate B. The electrodes 10a, 10b, 70 and 71 are, for example, metal foils containing copper. The electrodes 10a, 10b, 70 and 71 are provided, for example, in such a manner that the electrodes 10a and 10b and the electrodes 70 and 71 are arranged in the Y direction. In the following description, the side where the electrodes 10a and 10b are provided among the electrodes 10a, 10b, 70 and 71 is referred to as one end side along the Y direction. In addition, the side where the electrodes 70 and 71 are provided among the electrodes 10a, 10b, 70 and 71 is referred to as the other end side along the Y direction. In addition, the electrodes 10a and 10b are provided, for example, in such a manner that they are arranged in the X direction. In the following description, the side where the electrode 10a is provided among the electrodes 10a and 10b is referred to as one end side along the X direction. In addition, the side where the electrode 10b is provided among the electrodes 10a and 10b is referred to as the other end side along the X direction. The electrodes 70 and 71 are provided, for example, so as to be aligned in the X direction. The electrode 70 is provided, for example, closer to one end side along the X direction than the electrode 71. In addition, the electrodes 70 and 71 are preferably provided at positions close to each other along the X direction.

[0035] MOSFET 20a includes electrodes 21a, 22a and Figure 2 Electrodes not shown in the figure are arranged at the bottom of MOSFET 20a. Electrodes 21a and 22a are arranged on the upper surface of MOSFET 20a. The electrode arranged at the bottom of MOSFET 20a is connected to electrode 10a via a conductive paste, etc. on the lower surface of MOSFET 20a. In addition, the electrode arranged at the bottom of MOSFET 20a can have the same size as the lower surface of MOSFET 20a, for example. Electrode 21a functions as a source electrode of MOSFET 20a. Electrode 22a functions as a gate electrode of MOSFET 20a. The electrode arranged at the bottom of MOSFET 20a functions as a drain electrode of MOSFET 20a.

[0036] MOSFET 20b includes electrodes 21b, 22b and Figure 2 Electrodes 21b and 22b are arranged at the bottom of MOSFET 20b, which are not shown in the figure. Electrodes 21b and 22b are arranged at the upper surface of MOSFET 20b. The electrode arranged at the bottom of MOSFET 20b is connected to electrode 10b via a conductive paste or the like at the bottom surface of MOSFET 20b. In addition, the electrode arranged at the bottom of MOSFET 20b can have, for example, the same size as the bottom surface of MOSFET 20b. Electrode 21b functions as a source electrode of MOSFET 20b. Electrode 22b functions as a gate electrode of MOSFET 20b. The electrode arranged at the bottom of MOSFET 20b functions as a drain electrode of MOSFET 20b.

[0037] By the above arrangement of the MOSFETs 20 a and 20 b , the MOSFETs 20 a and 20 b are arranged adjacent to each other in the X direction, for example.

[0038] The ferrite bead FB1 includes, for example, electrodes (pads) FP11 and FP12. The electrode FP11 is disposed on the upper surface of the ferrite bead FB1. The electrode FP12 is connected to the electrode 70 via a conductive paste or the like on the lower surface of the ferrite bead FB1. The ferrite bead FB1 is disposed, for example, on the other end side of the electrode 70 along the X direction.

[0039] The ferrite bead FB2 includes, for example, electrodes (pads) FP21 and FP22. The electrode FP21 is disposed on the upper surface of the ferrite bead FB2. The electrode FP22 is connected to the electrode 71 via a conductive paste or the like on the lower surface of the ferrite bead FB2. The ferrite bead FB2 is disposed, for example, on a portion of one end side of the electrode 71 along the X direction.

[0040] In the above structure of the ferrite beads FB1 and FB2, the ferrite beads FB1 and FB2 are arranged adjacent to each other in the X direction. In addition, by the arrangement of the electrodes 70 and 71 described above, the ferrite beads FB1 and FB2 can be provided at positions close to each other in the X direction.

[0041] Furthermore, in the embodiment, the ferrite beads FB1 and FB2 are provided as chips different from each other.

[0042] The support table 30 is provided on the upper surface of the substrate B. The support table 30 is provided, for example, in a manner sandwiched by the electrodes 10a and 10b and the electrodes 70 and 71 in the Y direction. The support table 30 has a plate-like shape extending in the X direction and the Y direction. The support table 30 supports the light receiving element 40 and the light emitting element 60. The support table 30 may be, for example, any one of a conductor and an insulator. In addition, the support table 30 may be, for example, a composite material of a conductor and an insulator.

[0043] The light receiving element 40 is provided so as to be in contact with the upper surface of the support table 30. In addition, the light receiving element 40 is arranged so that the light receiving element 40 has a light receiving surface on the upper surface of the light receiving element 40, for example.

[0044] The light receiving element 40 includes electrodes 41, 42, 43, and 44. The electrodes 41 to 44 are arranged on the upper surface of the light receiving element 40. Figure 2 Although not shown in the figure, the electrodes 41 and 43 are electrically connected, for example, in the light receiving element 40. Figure 2 Although not shown in the figure, the electrodes 42 and 44 are electrically connected, for example, in the light receiving element 40. The electrodes 41 and 43 function, for example, as cathode electrodes of the light receiving element 40. The electrodes 42 and 44 function, for example, as anode electrodes of the light receiving element 40.

[0045] The light emitting element 60 is provided above the light receiving element 40. The light emitting element 60 is arranged so as to have a light irradiation surface on the lower surface of the light emitting element 60. The irradiation surface of the light emitting element 60 and the light receiving surface of the light receiving element 40 face each other.

[0046] The light emitting element 60 includes electrodes 61 and 62. The electrodes 61 and 62 are arranged on the upper surface of the light emitting element 60. The electrode 61 functions as, for example, an anode electrode of the light emitting element 60. The electrode 62 functions as, for example, a cathode electrode of the light emitting element 60.

[0047] An adhesive layer 50 is provided between the light emitting element 60 and the light receiving element 40 so as to be in contact with the light emitting element 60 and the light receiving element 40. The adhesive layer 50 is, for example, an insulating material having a transmissive property with respect to the light emitted from the light emitting element 60.

[0048] The terminals 80 , 81 , 82 a , and 82 b are provided so that the upper surfaces of the terminals are in contact with the lower surface of the substrate B, for example.

[0049] Signals are transmitted between the terminals 80 and 81, for example, through a device or circuit not shown. Figure 2 Although not shown in the figure, the terminal 80 is electrically connected to the electrode 70 via, for example, a conductor (through hole) penetrating the substrate B. Figure 2 Although not shown in the figure, the terminal 81 is electrically connected to the electrode 71 via a conductor (through hole) penetrating the substrate B, for example, similarly to the terminal 80 .

[0050] The terminals 82a and 82b are connected to a circuit or the like provided outside the semiconductor device 1. Figure 2 Although not shown in the figure, the terminal 82a is electrically connected to the electrode arranged at the bottom of the MOSFET 20a via, for example, a conductor (through hole) penetrating the substrate B, the electrode 10a, and a conductive paste. Figure 2 Although not shown in the figure, the terminal 82b is electrically connected to the electrode arranged at the lower part of the MOSFET 20b through the conductor (through hole) penetrating the substrate B, the electrode 10b and the conductive paste, for example, similarly to the terminal 82a.

[0051] The sealing material S is provided so as to cover the MOSFETs 20a and 20b, the support 30, the light receiving element 40, the light emitting element 60, the ferrite beads FB1 and FB2, and the electrodes 10a, 10b, 70, and 71. The sealing material S may include, for example, a non-light-transmitting material.

[0052] In the above structure of the semiconductor device 1 , the electrodes 10 a , 10 b , 70 , and 71 , the MOSFETs 20 a and 20 b , and the ferrite beads FB1 and FB2 may be arranged symmetrically with respect to the YZ plane, for example.

[0053] use Figure 3 The wiring inside the semiconductor device 1 will be described. Figure 3 It is a top view showing an example of a planar structure of a semiconductor device according to an embodiment.

[0054] The semiconductor device 1 further includes wirings W1 , W2 , W3 , W4 , W5 , W6 , and W7 .

[0055] The wirings W1 to W7 are conductive wires formed by, for example, wire bonding, and are made of a conductive material.

[0056] Wiring W1 electrically connects electrode FP11 to electrode 61. Wiring W2 electrically connects electrode FP21 to electrode 62. Wiring W3 electrically connects electrode 41 to electrode 21a. Wiring W4 electrically connects electrode 42 to electrode 22a. Wiring W5 electrically connects electrode 43 to electrode 21b. Wiring W6 electrically connects electrode 44 to electrode 22b. Wiring W7 electrically connects electrodes 21a and 21b. Figure 3 In FIG. 1 , an example is shown in which the electrodes 21 a and 21 b are connected via two wirings W7 , but the present invention is not limited thereto. The electrodes 21 a and 21 b may be connected via one or more wirings W7 .

[0057] In the above structure, the wirings W1 and W2 are respectively provided substantially parallel to the Y direction. In addition, due to the arrangement of the ferrite beads FB1 and FB2 described above, the wirings W1 and W2 are arranged adjacent to each other in the X direction.

[0058] The wiring W1 and the wiring W2 are preferably provided at positions close to each other in the X direction. For example, the wiring W1 is connected to the other end side of the electrode FP11 along the X direction. In addition, for example, the wiring W2 is connected to one end side of the electrode FP21 along the X direction. With such a structure, the wiring W1 and W2 can be provided at positions close to each other in the X direction.

[0059] In addition, the wiring W7 is provided substantially parallel to the X direction.

[0060] By the above arrangement of the wirings W1 , W2 , and W7 , the wirings W1 and W2 and the wiring W7 are arranged to be orthogonal to each other when viewed from above.

[0061] In addition, the wirings W1 to W7 are covered with a sealing material S.

[0062] In addition, the wirings W1 to W7 may be arranged symmetrically with respect to the YZ plane, for example.

[0063] According to the embodiment, it is possible to improve transmission characteristics and suppress an increase in mounting area. Hereinafter, improvement of transmission characteristics and suppression of an increase in mounting area of ​​the semiconductor device 1 according to the embodiment will be described.

[0064] The semiconductor device 1 of the embodiment includes MOSFETs 20a and 20b, a light emitting element 60, a light receiving element 40, a ferrite bead FB1 connected to an electrode 61 of the light emitting element 60, and a ferrite bead FB2 connected to an electrode 62 of the light emitting element 60. With such a structure, according to the embodiment, the generation of noise in the signal between the MOSFETs 20a and 20b can be suppressed without mounting ferrite beads outside the semiconductor device 1. Therefore, the transmission characteristics of the signal between the MOSFETs 20a and 20b can be improved, and an increase in the mounting area can be suppressed.

[0065] In addition, in the photorelay device, for example, in the Y direction, the driving current of the light emitting element is supplied from a position closer to the other end side than the MOSFET and the light emitting element toward one end side. In addition, in the photorelay device, the sources of the two MOSFETs are connected, for example, by wiring extending in the X direction. That is, the photorelay device can be configured so that the direction of the driving current supplied to the light emitting element intersects with the direction of the wiring between the sources of the two MOSFETs. In the photorelay device having the above structure, due to the interaction between the driving current of the light emitting element and the signal between the MOSFET, the generation of noise in the signal and the resulting deterioration of the transmission characteristics of the signal sometimes become a problem. Such noise is generated, for example, in a frequency band near 3 GHz. In order to suppress the generation of noise and the deterioration of the transmission characteristics, there is a case where a filter element for reducing noise is set outside the photorelay device (a case where an external filter element is set). For example, outside the photorelay device, a filter element is set on the wiring connected to the anode electrode and the cathode electrode of the light emitting element, respectively. However, in this case, since the filter element is installed outside the semiconductor device, there is a problem of increasing the mounting area.

[0066] According to the embodiment, the semiconductor device 1 includes the ferrite beads FB1 and FB2 inside the semiconductor device 1. This can suppress the generation of noise in the signal between MOSFETs and suppress the increase in the mounting area due to the filter element outside the semiconductor device 1.

[0067] Furthermore, according to the embodiment, since no external filter element is provided for reducing noise, the degree of freedom in arrangement of the semiconductor device 1 can be increased compared to the case where an external filter element is provided.

[0068] In addition, according to the embodiment, the transmission characteristics can be improved compared to the case where an external filter element is provided. More specifically, when an external filter element is provided, a signal may interact with a current flowing in a power supply path including a wiring portion outside the semiconductor device between the filter element and the light emitting element. According to the embodiment, the ferrite beads FB1 and FB2 are provided inside the semiconductor device 1, so that the wiring length between each of the ferrite beads FB1 and FB2 and the light emitting element 60 can be shortened compared to the case where an external filter element is provided. Therefore, the transmission characteristics of the semiconductor device 1 in the high frequency band can be improved.

[0069] In addition, according to the embodiment, the wirings W1 and W2 are directly connected to the electrodes FP11 and FP21, respectively. With such a structure, it is possible to effectively suppress an increase in the wiring length between the ferrite beads FB1 and FB2 and the light emitting element 60. With such a structure, the transmission characteristics of the semiconductor device 1 in the high frequency band can also be improved.

[0070] In addition, according to the embodiment, the wiring W1 and the wiring W2 are arranged in a manner extending substantially parallel to the Y direction. In addition, the wiring W1 and the wiring W2 are arranged adjacent to each other in the X direction. In these structures, the magnetic fields of the wirings W1 and W2 act in a manner of canceling each other. Thus, the interaction between the driving current and the signal of the light emitting element 60 can be reduced. Therefore, the transmission characteristics can be improved.

[0071] In addition, in the embodiment, the ferrite bead FB1 is provided on the other end side of the electrode 70 along the X direction. In addition, the ferrite bead FB2 is provided on the one end side of the electrode 71 along the X direction. In addition, the wiring W1 is connected to the other end side of the electrode FP11 along the X direction. In addition, the wiring W2 is connected to the one end side of the electrode FP21 along the X direction. Through these structures, the wirings W1 and W2 are provided at positions close to each other along the X direction. Therefore, the wirings W1 and W2 can be provided in a manner that the magnetic fields of the wirings W1 and W2 are effectively offset. Therefore, the interaction between the drive current and the signal of the light-emitting element 60 is reduced, and the transmission characteristics are improved.

[0072] 2 Modification

[0073] Next, a semiconductor device according to a modified example will be described. Hereinafter, descriptions of structures equivalent to those in the embodiment will be omitted, and structures different from those in the embodiment will be mainly described.

[0074] 2.1 First Modification

[0075] In the above embodiment, the ferrite beads FB1 and FB2 are provided as separate chips, but the present invention is not limited thereto. The ferrite beads FB1 and FB2 may be provided integrally.

[0076] Hereinafter, the structure of the semiconductor device 1 according to the first modification example will be described mainly with respect to points that are different from the semiconductor device according to the embodiment.

[0077] The circuit structure of the semiconductor device 1 of the first modification is the same as that of the embodiment. Figure 4 The structure of the semiconductor device 1 according to the first modified example will be described. Figure 4 FIG. 1 is a perspective view showing an example of the structure of a semiconductor device according to a first modification. Figure 4 In, with Figure 2 Similarly, illustration of wiring is omitted.

[0078] The semiconductor device 1 includes a ferrite component FC. The ferrite component FC includes ferrite beads FB1 and FB2 that are electrically insulated from each other. The electrodes FP11 and FP21 are configured to be exposed on the upper surface of the ferrite component FC, for example. In addition, the electrodes FP12 and FP22 are configured to be in contact with the electrodes 70 and 71, for example, on the lower surface of the ferrite component FC.

[0079] In addition, the ferrite component FC only needs to include the ferrite beads FB1 and FB2, and the internal structure of the ferrite component FC is not particularly limited. For example, the ferrite component FC is a component including the ferrite beads FB1 and FB2 built into a common sub-substrate. In this case, the ferrite beads FB1 and FB2 in the ferrite component FC are electrically connected to the wires and electrodes via the sub-substrates corresponding to the ferrite component FC. In addition, the ferrite component FC may also be a component configured as a chip including the ferrite beads FB1 and FB2 formed separately. In addition, although not shown in the figure, the ferrite component FC may also include structures such as conductors (through holes) in addition to the structures such as the ferrite beads FB1 and FB2.

[0080] The structure of the substrate B, electrodes 10a, 10b, 70 and 71, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a and 82b and wiring W1 to W7 in the first variant example can be the same as the structure of the substrate B, electrodes 10a, 10b, 70 and 71, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a and 82b and wiring W1 to W7 in the embodiment.

[0081] According to the first modification, similarly to the embodiment, it is possible to improve the transmission characteristics and suppress an increase in the mounting area.

[0082] 2.2 Second Modification

[0083] In the above embodiment, the electrodes FP11 and FP12 and the electrodes FP21 and FP22 are arranged vertically (in the Z direction) to the surface of the substrate B, but the present invention is not limited thereto. The electrodes FP11 and FP12 and the electrodes FP21 and FP22 may be arranged in the X direction, for example.

[0084] Hereinafter, the structure of the semiconductor device 1 according to the second modification example will be described mainly with respect to the differences from the semiconductor device according to the embodiment.

[0085] The circuit structure of the semiconductor device 1 of the second modification is the same as that of the embodiment and the first modification. Figure 5 The structure of the semiconductor device 1 according to the second modification example will be described. Figure 5 FIG. 1 is a perspective view showing an example of the structure of a semiconductor device according to a second modification. Figure 5 In, with Figure 2 and Figure 4 Similarly, illustration of wiring is omitted.

[0086] The semiconductor device 1 includes electrodes 70a, 70b, 71a, and 71b instead of the electrodes 70 and 71. The electrodes 70a, 70b, 71a, and 71b are provided on the upper surface of the substrate B. The electrodes 70a, 70b, 71a, and 71b are, for example, metal foils containing copper. The electrodes 70b, 70a, 71a, and 71b are provided, for example, in a manner of being arranged in sequence from one end side toward the other end side in the X direction. In addition, the electrodes 70a and 71a are preferably provided at positions close to each other in the X direction.

[0087] The electrode FP11 is provided at the side portion of the other end side of the ferrite bead FB1 along the X direction. The electrode FP12 is provided at the side portion of one end side of the ferrite bead FB1 along the X direction. With these structures, the electrodes FP11 and FP12 are arranged in the X direction. The electrode FP11 is arranged in such a manner that the downward portion of the side portion of the electrode FP11 is in contact with the electrode 70a. The electrode FP11 is arranged in such a manner that the portion of the side portion of the electrode FP12 facing downward is in contact with the electrode 70b.

[0088] The electrode FP21 is provided on one end side of the ferrite bead FB2 along the X direction. The electrode FP22 is provided on the other end side of the ferrite bead FB2 along the X direction. With these structures, the electrodes FP21 and FP22 are arranged in the X direction. The electrode FP21 is arranged in such a manner that the downward portion of the side portion of the electrode FP21 is in contact with the electrode 71a. The electrode FP21 is arranged in such a manner that the other end side portion of the electrode 71a along the X direction is in contact with the electrode 71b. The electrode FP22 is arranged in such a manner that the downward portion of the side portion of the electrode FP22 is in contact with the electrode 71b.

[0089] In addition, although Figure 5 Although not shown in the figure, the electrode 70b is electrically connected to the terminal 80 via, for example, a conductor (through hole) penetrating the substrate B. Figure 2 Although not shown in the figure, the electrode 71b is electrically connected to the terminal 81 via a conductor (through hole) penetrating the substrate B, for example.

[0090] use Figure 6 The structure of the semiconductor device 1 is further described. Figure 6 It is a top view showing an example of a planar structure of a semiconductor device according to a second modification.

[0091] The terminal 80 is, for example, arranged in a manner that has a portion overlapping with the electrode 70b when viewed from above. Thus, the terminal 80 can be electrically connected to the electrode 70b through a conductor. In addition, in the second variant, the terminal 80 is, for example, preferably arranged in a manner that does not overlap with the electrode 70a when viewed from above. That is, the terminal 80 is preferably arranged in a manner that the terminal 80 and the electrode 70a are separated in the X direction when viewed from above. If it is the above arrangement, for example, it is possible to suppress the performance degradation of the ferrite bead FB1 due to a short circuit caused by interlayer coupling between the electrode 70a and the terminal 80.

[0092] The terminal 81 is, for example, arranged in a manner that has a portion overlapping with the electrode 71b when viewed from above. Thus, the terminal 81 can be electrically connected to the electrode 71b through a conductor. In addition, in the second variant, the terminal 81 is, for example, preferably arranged in a manner that does not overlap with the electrode 71a when viewed from above. That is, the terminal 81 is preferably arranged in a manner that the terminal 81 and the electrode 71a are separated in the X direction when viewed from above. If the above arrangement is adopted, for example, a short circuit caused by interlayer coupling between the electrode 71a and the terminal 81 can be suppressed, which may cause a reduction in the performance of the ferrite bead FB2.

[0093] The wiring W1 electrically connects the portion of the other end side of the electrode 70a along the X direction to the electrode 61. The wiring W2 electrically connects the portion of the one end side of the electrode 71a along the X direction to the electrode 62. As in the embodiment and the first modification, the wirings W1 and W2 are arranged adjacent to each other along the X direction in a manner substantially parallel to the Y direction. In addition, as in the embodiment and the first modification, the wirings W1 and W2 are preferably provided at positions close to each other along the X direction.

[0094] The structure of the substrate B, electrodes 10a and 10b, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 82a and 82b, and wiring W3 to W7 in the second variant example may be the same as the structure of the substrate B, electrodes 10a and 10b, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 82a and 82b, and wiring W3 to W7 in the embodiment.

[0095] According to the second modification, similarly to the embodiment and the first modification, it is possible to improve the transmission characteristics and suppress an increase in the mounting area.

[0096] In addition, according to the second modification, Figure 6 As shown, the wirings W1 and W2 are directly connected to the electrodes 70a and 71a, respectively. With such a structure, the formation of the wirings W1 and W2 and the manufacture of the semiconductor device 1 become easy. Therefore, according to the second modification, the yield in the manufacture of the semiconductor device 1 is improved.

[0097] 2.3 Third Modification

[0098] In the second modification, the wirings W1 and W2 are connected to the electrodes 70a and 71a, respectively, but the present invention is not limited thereto. The wirings W1 and W2 may be directly connected to the ferrite beads FB1 and FB2, respectively.

[0099] Hereinafter, the structure of the semiconductor device 1 according to the third modification example will be described mainly with respect to the differences from the semiconductor device according to the second modification example.

[0100] The circuit structure of the semiconductor device 1 of the third modification is the same as that of the embodiment, the first modification, and the second modification. Figure 7 The structure of the semiconductor device 1 according to the third modified example will be described. Figure 7 It is a top view showing an example of a planar structure of a semiconductor device according to a third modification.

[0101] The wiring W1 is connected to a portion of the side surface of the electrode FP11 that faces upward. The wiring W2 is connected to a portion of the side surface of the electrode FP21 that faces upward.

[0102] In the third modification, similar to the embodiment, the first modification, and the second modification, the wirings W1 and W2 are arranged adjacent to each other in the X direction so as to be substantially parallel to the Y direction.

[0103] In addition, similar to the embodiment, the first modification and the second modification, the wirings W1 and W2 are preferably arranged at positions close to each other along the X direction. The electrode FP11 is arranged, for example, in contact with the portion of the other end side of the electrode 70a along the X direction. In addition, the electrode FP21 is arranged, for example, in contact with the portion of one end side of the electrode 71a along the X direction. With these structures, the wirings W1 and W2 can be arranged at positions close to each other along the X direction.

[0104] The structure of the substrate B, electrodes 10a, 10b, 70a and 70b, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a and 82b and wiring W3~W7 in the third variant can be the same as the structure of the substrate B, electrodes 10a, 10b, 70a and 70b, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a and 82b and wiring W3~W7 in the second variant.

[0105] According to the third modification, similarly to the embodiment, the first modification, and the second modification, it is possible to improve the transmission characteristics and suppress an increase in the mounting area.

[0106] 2.4 Fourth Modification

[0107] In the second and third modified examples, the electrodes FP11 and FP12 and the electrodes FP21 and FP22 are arranged along the X direction, but the present invention is not limited thereto. The electrodes FP11 and FP12 and the electrodes FP21 and FP22 may be arranged along the Y direction.

[0108] Hereinafter, the structure of the semiconductor device 1 according to the fourth modification example will be described mainly with respect to the differences from the semiconductor devices according to the second modification example and the third modification example.

[0109] The circuit structure of the semiconductor device 1 of the fourth modification is the same as that of the embodiment, the first modification, the second modification, and the third modification. Figure 8 The structure of a semiconductor device 1 according to a fourth modified example will be described. Figure 8 FIG. 1 is a perspective view showing an example of the structure of a semiconductor device according to a fourth modification. Figure 8 In, with Figure 2 , Figure 4 and Figure 5 Similarly, illustration of wiring is omitted.

[0110] The electrodes 70a and 70b are arranged in a manner having portions arranged in the Y direction. The electrode 70a is, for example, arranged at a position closer to one end side along the Y direction than the electrode 70b. The electrode 70a is, for example, arranged in a manner extending in the X direction. The electrode 70a includes, for example, a portion extending in the Y direction at the other end side along the X direction. With the above structure, the electrode 70a has, for example, an L-shape. In addition, in the above description, an example is shown in which the electrode 70a is arranged at a position closer to one end side along the Y direction than the electrode 70b, but it is not limited thereto. The electrode 70a may also be arranged at a position closer to the other end side along the Y direction than the electrode 70b.

[0111] The electrodes 71a and 71b are arranged in a manner having portions arranged in the Y direction. The electrode 71a is, for example, arranged at a position closer to one end side along the Y direction than the electrode 71b. The electrode 71a is, for example, arranged in a manner extending in the X direction. The electrode 71a includes, for example, a portion extending in the Y direction at one end side along the X direction. With the above structure, the electrode 71a has, for example, an L-shape. In addition, in the above description, an example is shown in which the electrode 71a is arranged at a position closer to one end side along the Y direction than the electrode 71b, but it is not limited thereto. The electrode 71a may also be arranged at a position closer to the other end side along the Y direction than the electrode 71b.

[0112] In the above structures of the electrodes 70a and 71a, for example, the portion of the electrode 70a extending in the Y direction and the portion of the electrode 71a extending in the Y direction are arranged adjacent to each other in the X direction. In addition, the portion of the electrode 70a extending in the Y direction and the portion of the electrode 71a extending in the Y direction are preferably arranged in a manner close to each other in the X direction.

[0113] The electrode FP11 is provided at a side portion of one end side of the ferrite bead FB1 along the Y direction. The electrode FP12 is provided at a side portion of the other end side of the ferrite bead FB1 along the Y direction. With these structures, the electrodes FP11 and FP12 are arranged in a manner arranged in the Y direction. The electrode FP11 is arranged, for example, in a manner that a downward portion of the side portion of the electrode FP11 is in contact with one end side of the electrode 70a along the X direction. The electrode FP12 is arranged in a manner that a downward portion of the side portion of the electrode FP12 is in contact with the electrode 70b.

[0114] The electrode FP21 is provided at one end side of the ferrite bead FB2 along the Y direction. The electrode FP22 is provided at the other end side of the ferrite bead FB2 along the Y direction. With these structures, the electrodes FP21 and FP22 are arranged in a manner arranged in the Y direction. The electrode FP21 is arranged, for example, in a manner that a downward portion of a side portion of the electrode FP21 is in contact with the other end side of the electrode 71a along the X direction. The electrode FP22 is arranged in a manner that a downward portion of a side portion of the electrode FP22 is in contact with the electrode 71b.

[0115] use Fig. 9 The structure of the semiconductor device 1 is further described. Fig. 9 It is a top view showing an example of a planar structure of a semiconductor device according to a fourth modification.

[0116] The wiring W1 electrically connects, for example, a portion of the electrode 70a extending in the Y direction to the electrode 61. The wiring W2 electrically connects, for example, a portion of the electrode 71a extending in the Y direction to the electrode 62.

[0117] In the fourth modification, similar to the embodiment, the first modification, the second modification, and the third modification, the wirings W1 and W2 are arranged adjacent to each other in the X direction substantially parallel to the Y direction. In addition, the wirings W1 and W2 are preferably provided at positions close to each other in the X direction.

[0118] The structure of the substrate B, electrodes 10a and 10b, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a and 82b, and wiring W3~W7 in the fourth variant example can be the same as the structure of the substrate B, electrodes 10a and 10b, MOSFET20a and 20b, support platform 30, light receiving element 40, adhesive layer 50, light emitting element 60, terminals 80, 81, 82a and 82b, and wiring W3~W7 in the second variant example and the third variant example.

[0119] According to the fourth modification, similarly to the embodiment, the first modification, and the second modification, it is possible to improve the transmission characteristics and suppress an increase in the mounting area.

[0120] In the fourth modification, the wirings W1 and W2 are directly connected to the electrodes 70a and 71a. Thus, according to the fourth modification, the formation of the wirings W1 and W2 and the manufacture of the semiconductor device 1 are facilitated as in the second modification. Therefore, the yield in the manufacture of the semiconductor device 1 is improved.

[0121] 3 Others

[0122] In the fourth modification, the wirings W1 and W2 are directly connected to the electrodes 70a and 71a, respectively, but the present invention is not limited thereto. Fig.10 As shown, similar to the third modification example, the wirings W1 and W2 may be directly connected to the electrodes FP11 and FP21, respectively. Fig.10 2 is a plan view showing an example of a planar structure of a semiconductor device of another example. In this case, ferrite beads FB1 and FB2 and electrodes 70a, 70b, 71a, and 71b are also arranged so that wirings W1 and W2 are parallel, for example.

[0123] Several embodiments have been described above, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope and subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

Claims

1. A semiconductor device, characterized in that: have: substrate; A first transistor and a second transistor are respectively disposed above the first surface of the substrate, and their sources are connected to be shared; A light emitting element, disposed above the first surface of the substrate, having an anode electrode and a cathode electrode; A light receiving element is disposed above the first surface of the substrate, and turns the first transistor and the second transistor into an on state or an off state according to the light emitting state of the light emitting element; a first filter element, disposed above the first surface of the substrate and connected to the anode electrode of the light emitting element; as well as The second filter element is disposed above the first surface of the substrate and connected to the cathode electrode of the light emitting element.

2. The semiconductor device according to claim 1, wherein: Also available: a first wiring electrically connecting the first filter element and the anode electrode of the light emitting element; and a second wiring electrically connecting the second filter element and the cathode electrode of the light emitting element; The first wiring and the second wiring are arranged substantially parallel to each other when viewed from above.

3. The semiconductor device according to claim 2, wherein: The first filter element has a first filter electrode and a second filter electrode, The second filter element has a third filter electrode and a fourth filter electrode.

4. The semiconductor device according to claim 3, wherein: The first filter electrode and the second filter electrode are opposed to each other in a first direction perpendicular to the first surface. The third filter electrode and the fourth filter electrode are opposite to each other in the first direction, The first filter electrode is disposed on the upper surface of the first filter element. The second filter electrode is arranged on the lower surface of the first filter element, The third filter electrode is arranged on the upper surface of the second filter element, The fourth filter electrode is disposed on the lower surface of the second filter element.

5. The semiconductor device according to claim 3, wherein: The first filter electrode and the second filter electrode are opposed to each other in a first direction parallel to the first surface. The third filter electrode and the fourth filter electrode are opposite to each other in the first direction.

6. The semiconductor device according to claim 5, wherein: The first transistor and the second transistor are arranged in the first direction.

7. The semiconductor device according to claim 5, wherein: The first transistor and the second transistor are arranged in a second direction orthogonal to the first direction.

8. The semiconductor device according to claim 3, wherein: The first wiring is directly connected to the first filter electrode, The second wiring is directly connected to the third filter electrode.

9. The semiconductor device according to claim 1, wherein: The first filter element and the second filter element are integrated into one body.

10. The semiconductor device according to claim 1, wherein: The light emitting element and the light receiving element are sandwiched between the first filter element and the second filter element and the first transistor and the second transistor in a first direction parallel to the first surface.

11. The semiconductor device according to claim 3, wherein: The semiconductor device further includes a first terminal, a second terminal, a third terminal, and a fourth terminal provided below the first surface. The first terminal is connected to the second filter electrode via a through hole penetrating the substrate. The second terminal is connected to the fourth filter electrode via a through hole penetrating the substrate. The third terminal is connected to the drain of the first transistor via a through hole penetrating the substrate. The fourth terminal is connected to the drain of the second transistor via a through hole penetrating the substrate.

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