Radio frequency control circuit
By using silicon-based RF switches and gate control networks in RF switches, the problem that traditional RF switch logic control bias method cannot take into account the number of control lines and harmonic performance is solved, and a simplified control circuit design and excellent harmonics are realized. performance.
Patent Information
- Application Number
- CN202310977413.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-04
- Publication Date
- 2025-02-14
AI Technical Summary
The logic control bias method of traditional RF switches cannot take into account the number of control lines and harmonic performance at the same time, resulting in poor linear and harmonic performance of RF switches under high signal conditions.
The silicon-based radio frequency switch and gate control network are used to weaken the leakage current between the source and body electrode and the drain electrode and the body electrode to obtain the body electrode voltage, and the gate control voltage and radio frequency signal are isolated through the gate control network. Simplify the control circuit.
It realizes better harmonic performance of RF control circuits under fewer control lines, simplifies the control circuit design, reduces the number of control lines, and improves the linear performance of RF switches under large signals.
Smart Images
Figure CN119451209A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of radio frequency control, and in particular to a radio frequency control circuit. Background Art
[0002] RF chips are developing towards high performance, wide bandwidth and high power. The switch in the RF control circuit, as a key control module in the RF front end, directly controls the transceiver mode and the switching between different frequency bands. Therefore, an RF switch with low insertion loss, high isolation and high power handling capability is the cornerstone of realizing a high-performance RF transceiver system.
[0003] Traditional switch processes are mainly based on III-V semiconductor GaAs. GaAs processes are often used to design high-linearity RF switches due to their high breakdown voltage advantages, but they also have defects such as high manufacturing cost, unfavorable for CMOS logic integration, poor process consistency and low yield. The SOI process adds silicon to the insulating buried oxide layer, has extremely small source-drain parasitic capacitance and eliminates the latch effect, improving the performance of the switch by 30-40%. Coupled with cost reduction and increased integration, the SOI process has shined in RF switch applications and quickly became the mainstream process in the RF switch market. The structure of the SOI process is as follows: Figure 1 shown.
[0004] like Figure 2 As shown in the figure, in order to ensure low insertion loss and high isolation at the same time, high-power SOI process switches generally adopt a series-parallel stacking method. The series and parallel branches are respectively stacked by multiple SOI process field effect tube units. The structure of each SOI process field effect tube unit is as follows Figure 3 As shown, the structure of the series branch and the parallel branch units are the same, and only the parameters of the transistors are different.
[0005] Please refer to Figure 4 Compared with GaAs process, SOI process field effect transistors can be configured as floating body (FB) and body contact (BC) devices, and different voltage biases are performed through the body terminal, which has greater flexibility. The voltage bias of the body terminal is crucial to the performance of the RF switch, especially the performance of high-power processing. Under high-power conditions, especially when the field effect tube unit is in the off state, due to the presence of the parasitic diode Dp with a biased direction between the source and drain and the body, the large RF voltage swing between the source and drain and the body causes the parasitic diode Dp to be instantly forward-conducted, and the RF voltage sinusoidal waveform is limited to produce nonlinear effects, and the parasitic diode Dp produces a self-bias effect and parasitic leakage current to the ground, which will seriously affect the performance of the RF switch under large signals, especially the linear performance, and produce larger high-order harmonic components, especially odd harmonic components. Therefore, the body voltage bias Vb of each SOI field effect tube unit has a great influence on the large-signal performance of the SOI process RF switch, especially the harmonic performance.
[0006] In order to solve the influence of body voltage bias Vb on the performance of SOI process RF switch, the traditional solution is:
[0007] Method 1: Please refer to Figure 5 , traditional logic control bias 1, using body contact (BC) field effect transistor. When the SOI process RF switch is turned on: Vg = 2.5V, Vb = 0V, when the SOI process RF switch is turned off: Vg = -2.5V, Vb = -2.5V, the advantages of method 1 are: when the parasitic diode between the drain D / source S and the body port B is turned on under a large voltage swing, the leakage current to the ground is reduced through a large resistor, the large signal performance is improved, and a negative voltage is applied to the body and gate G in the off state to optimize the power handling capability, and it has good linear performance. Reference Figure 6 , the third harmonic in method 1 is 77dBc. In this method, the body voltage bias Vb in the on state cannot be maintained at Vb = -2.5V in the off state, because the SOI field effect tube will have the risk of high voltage breakdown from gate to body. The disadvantages of method 1 are: the gate and body voltages in the on state are different, and the body voltage is also different in the on and off states, so a separate body control voltage is required, which complicates the design of the switch logic control bias circuit, especially when the switch is a single-pole multi-throw switch.
[0008] Method 2, please refer to Figure 7 , the traditional logic control bias 2, the improvement method is: the body pole B is suspended, even if the SOI field effect tube is placed in a floating state, under the improved method, when the SOI process RF switch is turned on: Vg = 2.5V, when the SOI process RF switch is turned off: Vg = -2.5V, the advantages of method 2 are: the body pole is suspended to make the SOI field effect tube a three-port device, the logic control voltage bias structure is the simplest, only the gate voltage bias is required, the occupied area is the smallest, and the control circuit is only half of the traditional bias 1. The disadvantages of method 2 are: the body pole is suspended, which makes the body pole potential in an uncertain state, which will affect the linear performance of the switch, resulting in the worst third harmonic performance under large signals among the three traditional biases. Please refer to Figure 8 , the third harmonic in method 2 is 47dBc.
[0009] Method 3, please refer to Fig. 9, the traditional logic control bias 3, the improvement method is: the body is grounded through a large resistor, which is called the resistor body floating technology. Under the improved method, when the SOI process RF switch is turned on: Vg = 2.5V, Vb = 0V, when the SOI process RF switch is turned off: Vg = -2.5V, Vb = 0V, the advantages of method 3 are: the control circuit is the same as the traditional logic control bias 2, only half of the traditional logic control bias 1. The disadvantages of method 3 are: the body is grounded, the third harmonic performance is slightly better than the traditional logic control bias 2, and lower than the traditional logic control bias 1. Please refer to Fig.10 , the third harmonic in method 3 is 56dBc.
[0010] In summary, the traditional logic control bias method cannot take into account both the number of control lines and harmonic performance. Summary of the invention
[0011] The present invention aims to achieve better harmonic performance of a radio frequency control circuit by using fewer control circuits.
[0012] To achieve the above-mentioned purpose, the present invention provides a radio frequency control circuit, which includes a silicon-based radio frequency switch and a gate-body control network, wherein the gate-body control network is used to weaken the leakage current between the source and the body and between the drain and the body of the silicon-based radio frequency switch, and to obtain the body voltage of the silicon-based radio frequency switch based on the gate control voltage of the silicon-based radio frequency switch.
[0013] Furthermore, the gate-body control network is also used to weaken the parasitic effects generated by the parasitic diodes between the body and source and between the body and drain of the silicon-based RF switch.
[0014] Furthermore, the gate-body control network is also used to isolate the gate control voltage of the silicon-based RF switch from the RF signals on the drain and source of the silicon-based RF switch.
[0015] Furthermore, two ends of the gate-body control network are respectively connected to the body and gate of the silicon-based RF switch.
[0016] One or more technical solutions provided by the present invention have at least the following technical effects or advantages:
[0017] Compared with the traditional radio frequency switch, the radio frequency control circuit in the present invention has a simple control circuit and better linear performance, especially third harmonic performance, thus achieving a balance between harmonic performance and control circuit. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The drawings described herein are used to provide a further understanding of the embodiments of the present invention, constitute a part of the present invention, and do not constitute a limitation on the embodiments of the present invention;
[0019] Figure 1Schematic diagram of the switch structure of SOI process;
[0020] Figure 2 A schematic diagram of the series-parallel stacking of high-power SOI process switches;
[0021] Figure 3 It is a schematic diagram of the structure of a field effect tube unit of the SOI process;
[0022] Figure 4 It is a schematic diagram of the parasitic effect principle of SOI process field effect transistor;
[0023] Figure 5 It is a schematic diagram of conventional logic control bias 1;
[0024] Figure 6 It is a schematic diagram of harmonic performance of conventional logic control bias 1;
[0025] Figure 7 It is a schematic diagram of conventional logic control bias 2;
[0026] Figure 8 It is a schematic diagram of harmonic performance of conventional logic control bias 2;
[0027] Fig. 9 It is a schematic diagram of conventional logic control bias 3;
[0028] Fig.10 It is a schematic diagram of harmonic performance of conventional logic control bias 3;
[0029] Fig.11 It is a schematic diagram of the structure when the gate control network adopts resistors;
[0030] Fig.12 It is a schematic diagram of the structure when multiple resistors are used in the gate control network;
[0031] Fig.13 This is a schematic diagram of harmonic performance of a radio frequency control circuit according to a second embodiment of the present invention;
[0032] Fig.14 It is a schematic diagram of the structure when the gate control network adopts multiple diodes connected in forward direction;
[0033] Fig.15 It is a schematic diagram of the structure when the gate control network adopts multiple diodes connected in reverse;
[0034] Fig.16 This is a schematic diagram of harmonic performance of a radio frequency control circuit according to a third embodiment of the present invention;
[0035] Fig.17 Schematic diagram of the structure when multiple field effect transistors are used in the gate-body control network. DETAILED DESCRIPTION
[0036] In order to more clearly understand the above-mentioned purpose, features and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.
[0037] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those within the scope of this description. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.
[0038] Embodiment 1
[0039] Embodiment 1 of the present invention provides a radio frequency control circuit, which includes a silicon-based radio frequency switch and a gate-body control network. The gate-body control network is used to weaken the leakage current between the source and the body and between the drain and the body of the silicon-based radio frequency switch, and to obtain the body voltage of the silicon-based radio frequency switch based on the gate control voltage of the silicon-based radio frequency switch.
[0040] Among them, in the embodiment of the present invention, the embodiment of the present invention adds a gate-body control network in the RF control circuit. The gate-body control network can weaken the leakage current between the source and the body and between the drain and the body of the silicon-based RF switch, thereby ensuring the performance of the RF switch under large signals, especially the linear performance, and avoiding the generation of larger high-order harmonic components. The gate-body control network can also obtain the body voltage of the silicon-based RF switch based on the gate control voltage of the silicon-based RF switch, so that the body level follows the gate control voltage, simplifies the control circuit, and does not need to allocate a group of logic control lines to the body as in the traditional control method, thereby simplifying the control method and reducing the number of control lines.
[0041] Among them, in the embodiment of the present invention, under high-power conditions, especially when the field effect tube switch is in the off state, due to the presence of the parasitic diode Dp biased in the direction between the source and drain and the body, the large RF voltage swing between the source and drain and the body causes the parasitic diode Dp to be instantaneously forward-conducted, thereby causing the parasitic diode Dp to produce a self-bias effect and a parasitic leakage current to the ground, thereby generating a parasitic effect. In order to reduce the parasitic effect, the gate-body control network is also used to weaken the parasitic effect generated by the parasitic diodes between the body and source and between the body and drain of the silicon-based RF switch. After weakening the parasitic effect through the gate-body control network, the performance of the silicon-based RF switch can be guaranteed.
[0042] In the embodiment of the present invention, the gate-body control network is also used to isolate the gate control voltage of the silicon-based RF switch from the RF signals on the drain and source of the silicon-based RF switch.
[0043] In an embodiment of the present invention, two ends of the gate-body control network are respectively connected to the body and gate of the silicon-based RF switch, or are respectively connected to the body and gate voltage control ports of the silicon-based RF switch.
[0044] Embodiment 2
[0045] Based on the first embodiment, in the second embodiment of the present invention, please refer to Fig.11 , Fig.11 This is a schematic diagram of the structure when the gate control network uses resistors. Fig.11 Where D is the drain, S is the source, G is the gate, B is the body, Rg is the gate resistor, Rb is the first resistor, Rds is the second resistor, Rg is connected between the gate G and the gate voltage control port Vg, and one end of the gate-body control network can be directly connected to the gate G, or connected to the gate G through the gate resistor Rg (such as Fig.11 shown), Fig.11 The dotted line in the figure is the parasitic diode Dp. Fig.11 The number of Rb in the equation can be one, or multiple resistors can be connected in series, such as Fig.12 As shown, at this time, three first resistors Rb are connected in series, and the gate-body control network includes: at least one first resistor; when the gate-body control network includes one first resistor, the two ends of the first resistor are respectively connected to the body and gate of the silicon-based RF switch; when the gate-body control network includes multiple first resistors, the multiple first resistors are sequentially connected in series to form a resistor string, and the two ends of the resistor string are respectively connected to the body B and gate G of the silicon-based RF switch, or respectively connected to the body B and gate voltage control port Vg of the silicon-based RF switch.
[0046] In the second embodiment of the present invention, the body electrode B of the RF switch is connected to the gate electrode G through one or more first resistors, so that the body electrode voltage = the gate voltage when the silicon-based RF switch is turned on and off. There is no need to allocate a separate group of logic control lines to the body electrode as in the traditional control method, so that the number of control circuits is reduced by half compared to the number of control circuits in the traditional control method.
[0047] When the gate control network includes a plurality of first resistors, the number of the first resistors may be 2, 3, 4 or other numbers, and the resistance values of the first resistors may be the same or different.
[0048] Among them, multiple first resistors are connected in series in sequence to form a resistor string, which can be understood as: if the gate control network includes n first resistors, n is 3 in this case, and can be other numbers in actual applications, the three first resistors are connected in series in sequence, that is, one end of the first first resistor is connected to one end of the second first resistor, the other end of the second first resistor is connected to one end of the third first resistor, and the other end of the first first resistor and the other end of the third first resistor serve as the two ends of the gate control network.
[0049] In the embodiment of the present invention, one end of the gate control network can be directly connected to the gate G of the silicon-based RF switch, or connected to the gate G through a gate resistor Rg (such as Fig.12 As shown in FIG. 1 , a second resistor Rds is connected between the drain D and the source S of the silicon-based RF switch. The second resistor Rds can ensure that the drain and the source have the same DC bias level when the switch is turned off, and the DC bias level is usually 0V.
[0050] Among them, in the embodiment of the present invention, after the body electrode B and the gate electrode G are connected through the first resistor Rb, the resistance value of the first resistor Rb connected to the body electrode needs to be carefully considered. If the resistance connected to the body electrode is too small, when the switch is turned on Vg = 2.5V, it will cause the parasitic diode Dp between the B pole and the D and S poles to generate a large leakage current after forward conduction. Excessive leakage current will seriously affect the insertion loss of the switch and even cause the switch to fail. In addition, after Dp is forward-conducted, the gate control voltage will interfere with the RF signal on the drain and source of the silicon-based RF switch. Therefore, the first resistor Rb in the gate-body control network needs to have a large enough resistance to effectively isolate the gate control voltage of the silicon-based RF switch from the RF signal on the drain and source of the silicon-based RF switch. At the same time, the first resistor Rb connected to the B pole cannot be too large, because after the B pole and the G pole are connected, the first resistor Rb connected to the B pole is too large, which will affect the switching time. In the embodiment of the present invention, the resistance values of the gate resistor Rg, the second resistor Rds and the first resistor Rb in the gate-body control network are in the range of 10KΩ to 1MΩ.
[0051] Please refer to Fig.13 , Fig.13 Schematic diagram of harmonic performance of the RF control circuit of the second embodiment of the present invention, the third harmonic is 77dBc.
[0052] Embodiment 3
[0053] Based on the first embodiment, in the third embodiment of the present invention, please refer to Figure 14-15 , Fig.14 and Fig.15 Where D is the drain, S is the source, G is the gate, B is the body, Rg is the gate resistor, Rds is the second resistor, and one end of the gate-body control network is connected between Rg and the gate G. Figure 14-15 The dotted line in is a parasitic diode Dp. The gate-body control network includes: at least one diode; when the gate-body control network includes one diode, the two ends of the diode are respectively connected to the body electrode B and the gate electrode G of the silicon-based RF switch; when the gate-body control network includes multiple diodes, the multiple diodes are sequentially connected in series to form a diode string, and the two ends of the diode string are respectively connected to the body electrode B and the gate electrode G of the silicon-based RF switch. Figure 14-15The number of diodes in the mid-gate control network can be adjusted according to actual needs, and the connection of the diodes can be forward as follows Fig.14 As shown, it can also be reversed as Fig.15 shown.
[0054] Among them, in embodiment three of the present invention, the number of diodes in the gate control network can be 1, 2, 3 or 4, etc., and the specific number is adjusted according to actual needs, and multiple diodes are connected in series in sequence, such as one end of the previous diode is connected to one end of the next diode to form a diode string, and the diodes in the diode string can be connected forward or reverse.
[0055] The technical solution of the third embodiment is a diode-based body self-biasing strategy, as an improvement of the body electrode B connected to the first resistor Rb and connected to the gate G. In the structure of the third embodiment, the first resistor Rb connected to the body electrode B is replaced by a diode connected between the gate G and the body electrode B. When the silicon-based RF switch is turned on: Vg = Vb = 2.5V, when the silicon-based RF switch is turned off: Vg = Vb = -2.5V. When Figure 2 When the series / parallel branch in the switch is in the on state, Fig.14 The diodes in the gate-body control network are reverse biased, and the drain and source body parasitic diodes Dp are slightly forward biased. Therefore, most of the on-gate voltage falls on the diodes in the gate-body control network, biasing the body at a potential close to ground. Figure 2 When the series / parallel branches in the switch are in the off state, Fig.14 The diode in the middle gate-body control network is forward biased and turned on, and the body pole B is a negative voltage. At this time, the parasitic diode Dp is reverse biased, and its parasitic capacitance value is minimum, which has little effect on the switch RF performance and linearity. The main advantage of this bias is that no additional bias resistors and control voltages are used, and the body pole voltage changes with the gate voltage. In an embodiment of the present invention, the resistance value range of the gate resistor Rg and the second resistor Rds is between 10KΩ and 1MΩ.
[0056] Please refer to Fig.16 , Fig.16 Schematic diagram of harmonic performance of the radio frequency control circuit of the third embodiment of the present invention, the third harmonic is 78dBc.
[0057] Embodiment 4
[0058] Based on the first embodiment, in the fourth embodiment of the present invention, please refer to Fig.17 , Fig.17 Where D is the drain, S is the source, G is the gate, B is the body, Rg is the gate resistor, Rds is the second resistor, and one end of the gate-body control network is connected between Rg and the gate G. Fig.17The dotted line in the figure is a parasitic diode Dp. Since the gate and source of the field effect transistor in this embodiment are connected, the field effect transistor can be equivalent to a diode. The equivalent diode is replaced by a field effect transistor. Fig.17 The diode in the circuit can be connected in the forward direction or in the reverse direction. The direction of connection and the number of series connections can be adjusted according to actual needs. The gate-body control network includes: at least one field effect transistor, the gate of the field effect transistor is connected to the source; when the gate-body control network includes a field effect transistor, the drain (or source) of the field effect transistor is connected to the body of the silicon-based RF switch, and the source (or drain) of the field effect transistor is connected to the gate of the silicon-based RF switch; when the gate-body control network includes multiple field effect transistors, the multiple field effect transistors are connected in series in sequence to form a field effect transistor string, and the two ends of the field effect transistor string are respectively connected to the body and gate of the silicon-based RF switch.
[0059] Since the gate of the field effect transistor in this embodiment is connected to the source, the field effect transistor can be equivalent to a diode. When it is equivalent to a diode, its principle can be equivalent to the principle in the third embodiment, and two or more floating body (FB) nFET tubes equivalent to diodes are cascaded in series between the gate G and the body B of the RF switch. Through simulation, the harmonic performance of two FB nFET tubes in series is better than that of one FB nFET tube in series. The directions of multiple cascaded FB nFET diodes can be opposite.
[0060] Among them, the field effect transistors in the gate-body control network can be 1 or 2 or 3 or 4, etc., and the specific number is adjusted according to actual needs. The way in which multiple field effect transistors are connected in series in sequence to form a field effect transistor string is: the drain and source of two adjacent field effect transistors are connected, and multiple field effect transistors are connected in series in sequence, and the connection direction can be forward or reverse.
[0061] Among them, in an embodiment of the present invention, the gate-body control network is connected to a gate resistor Rg, one end of the gate-body control network is connected between the gate of the silicon-based RF switch and the resistor Rg, and a second resistor Rds is connected between the drain and source of the silicon-based RF switch.
[0062] In the embodiment of the present invention, the resistance value range of the second resistor Rds and the gate resistor Rg is between 10KΩ and 1MΩ.
[0063] In the embodiment of the present invention, the gate of the field effect transistor may also be connected to the drain to form an equivalent diode.
[0064] In the embodiment of the present invention, the source electrode of the field effect transistor may also be connected to the drain electrode to form an equivalent diode.
[0065] Embodiment 5
[0066] On the basis of the first embodiment, in the fifth embodiment of the present invention, the gate-body control network includes: a plurality of two-port devices, the two-port devices include: one or more of a first resistor, a diode and a field effect transistor, wherein the gate of the field effect transistor is connected to the source; since the gate of the field effect transistor in this embodiment is connected to the source, the field effect transistor can be equivalent to a diode, that is, equivalent to a two-port device, and a plurality of two-port devices are connected in series in sequence to form a device string, and the two ends of the device string are respectively connected to the body and gate of the silicon-based RF switch. When the two-port devices are connected in series, the number of series connections can be 2 or 3 or 4, etc., and the specific number can be adjusted according to actual needs, and the type of the two-port device can be one or more or any combination of the first resistor, a diode and a field effect transistor, and the connection direction between the two-port devices can be forward or reverse.
[0067] In the embodiment of the present invention, the gate of the field effect transistor may also be connected to the drain to form an equivalent diode.
[0068] In the embodiment of the present invention, the source electrode of the field effect transistor may also be connected to the drain electrode to form an equivalent diode.
[0069] Embodiments 1 to 5 of the present invention propose a radio frequency control circuit. When the performance of third and higher harmonics is the same as or even better than that of traditional logic control bias 1, the control circuit is only half of that of traditional logic control bias 1, which solves the shortcomings of traditional logic control bias that cannot take into account both harmonic suppression performance and complex control circuits.
[0070] Although the embodiments of the present invention take the switch of the CMOS SOI radio frequency control circuit as an example, it is also applicable to other radio frequency control circuits based on CMOS SOI, such as radio frequency attenuators, radio frequency phase shifters, etc.
[0071] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.
[0072] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
Claims
1. A radio frequency control circuit, characterized in that: The RF control circuit includes a silicon-based RF switch and a gate-body control network, wherein the gate-body control network is used to weaken the leakage current between the source and body and between the drain and body of the silicon-based RF switch, and to obtain the body voltage of the silicon-based RF switch based on the gate control voltage of the silicon-based RF switch.
2. A radio frequency control circuit according to claim 1, characterized in that: The gate-body control network is also used to weaken the parasitic effects generated by the parasitic diodes between the body and the source and between the body and the drain of the silicon-based RF switch.
3. A radio frequency control circuit according to claim 1, characterized in that: The gate-body control network is also used to isolate the gate control voltage of the silicon-based RF switch from the RF signals on the drain and source of the silicon-based RF switch.
4. The radio frequency control circuit according to claim 1, characterized in that: The two ends of the gate-body control network are respectively connected to the body electrode and the gate of the silicon-based RF switch, or the two ends of the gate-body control network are respectively connected to the body electrode and the gate voltage control port of the silicon-based RF switch.
5. The radio frequency control circuit according to claim 1, characterized in that: The gate-body control network includes: at least one first resistor; when the gate-body control network includes one first resistor, the two ends of the first resistor are respectively connected to the body and gate of the silicon-based RF switch; when the gate-body control network includes multiple first resistors, the multiple first resistors are sequentially connected in series to form a resistor string, and the two ends of the resistor string are respectively connected to the body and gate of the silicon-based RF switch, or the two ends of the resistor string are respectively connected to the body and gate voltage control port of the silicon-based RF switch.
6. A radio frequency control circuit according to claim 5, characterized in that: A gate resistor Rg is further connected between the gate voltage control port of the silicon-based RF switch and the gate of the silicon-based RF switch, and a second resistor Rds is connected between the drain and source of the silicon-based RF switch.
7. The radio frequency control circuit according to claim 6, characterized in that: The resistance values of the gate resistor Rg, the second resistor Rds and the first resistor are all greater than or equal to 10KΩ and less than or equal to 1MΩ.
8. The radio frequency control circuit according to claim 1, characterized in that: The gate-body control network includes: at least one diode; when the gate-body control network includes one diode, the two ends of the diode are respectively connected to the body and gate of the silicon-based RF switch; when the gate-body control network includes multiple diodes, the multiple diodes are sequentially connected in series to form a diode string, and the two ends of the diode string are respectively connected to the body and gate of the silicon-based RF switch.
9. The radio frequency control circuit according to claim 1, characterized in that: The gate-body control network includes: at least one field effect transistor, the gate of the field effect transistor is connected to the source, or the gate of the field effect transistor is connected to the drain, or the source of the field effect transistor is connected to the drain; when the gate-body control network includes one field effect transistor, the drain or source of the field effect transistor is connected to the body of the silicon-based RF switch, and the source or drain of the field effect transistor is connected to the gate of the silicon-based RF switch; when the gate-body control network includes multiple field effect transistors, the multiple field effect transistors are connected in series in sequence to form a field effect transistor string, and the two ends of the field effect transistor string are respectively connected to the body and gate of the silicon-based RF switch.
10. The radio frequency control circuit according to claim 9, characterized in that: The manner in which a plurality of field effect transistors are sequentially connected in series to form a field effect transistor string is that the drains and sources of two adjacent field effect transistors are connected.
11. A radio frequency control circuit according to claim 8 or 9, characterized in that: The gate control network is connected to a gate resistor Rg, one end of the gate control network is connected between the gate of the silicon-based RF switch and the gate resistor Rg, and a second resistor Rds is connected between the drain and source of the silicon-based RF switch.
12. The radio frequency control circuit according to claim 11, characterized in that: The resistance values of the gate resistor Rg and the second resistor Rds are both greater than or equal to 10KΩ and less than or equal to 1MΩ.
13. The radio frequency control circuit according to claim 1, characterized in that: The gate-body control network includes: a plurality of two-port devices, the two-port devices include: one or more of a first resistor, a diode and a field effect transistor, wherein the gate of the field effect transistor is connected to the source, or the gate of the field effect transistor is connected to the drain, or the source of the field effect transistor is connected to the drain; the plurality of two-port devices are connected in series in sequence to form a device string, and the two ends of the device string are respectively connected to the body and the gate of the silicon-based RF switch.