Solar cell, method for manufacturing same, and electric device

Abstract

The invention provides a solar cell, a manufacturing method thereof and an electric device. The solar cell comprises a first electrode layer, an active layer, a second electrode layer and a semi-packaging layer which are stacked in sequence, and the semi-packaging layer comprises a plane part located between the active layer and the second electrode layer and a packaging part at least partially located on at least one side face of the active layer. A plane part between the active layer and the second electrode layer in the packaging layer can inhibit migration of active ions in the active layer to the second electrode layer; the packaging part, at least partially located on at least one side face of the active layer, in the packaging layer can block external water and oxygen, degradation of the active layer under the action of water and oxygen is reduced, and then the stability of the solar cell is comprehensively improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cell devices, and in particular to a solar cell, a manufacturing method thereof, and an electrical device. Background Art

[0002] With the large-scale development and utilization of non-renewable energy sources such as coal and oil, their storage capacity can no longer meet the development needs of various industries such as agriculture and industry. Therefore, recycled energy has gradually become one of the alternative energy sources to non-renewable energy sources to promote the development of society and industry. Among them, solar cell devices are widely used because of their green and environmentally friendly characteristics and the ability to output electrical energy when exposed to sunlight.

[0003] However, solar cells have poor stability and are prone to aging in external environments, which leads to significant degradation of device performance and shortened service life, limiting their further promotion and application. Summary of the invention

[0004] The present application provides a solar cell, a manufacturing method thereof and an electrical device, wherein the solar cell has high performance stability.

[0005] In a first aspect, an embodiment of the present application provides a solar cell, comprising: a first electrode layer, an active layer, a second electrode layer, and a semi-encapsulation layer stacked in sequence, the semi-encapsulation layer comprising a planar portion located between the active layer and the second electrode layer and an encapsulation portion at least partially located on at least one side of the active layer.

[0006] The planar portion of the encapsulation layer located between the active layer and the second electrode layer can inhibit the migration of active ions in the active layer to the second electrode layer; the encapsulation portion of the encapsulation layer that is at least partially located on at least one side of the active layer can block external water and oxygen, reduce the degradation of the active layer under the action of water and oxygen, and thereby comprehensively improve the stability of the solar cell.

[0007] In any embodiment, the semi-encapsulation layer comprises a semiconductor material.

[0008] The semi-encapsulation layer includes semiconductor materials, which can suppress device efficiency attenuation and improve the performance stability of solar cells. At the same time, it is beneficial for the migration of carriers from the active layer to the second electrode layer, thereby improving the photoelectric conversion efficiency of solar cells.

[0009] In any embodiment, the semi-encapsulation layer is prepared by atomic layer deposition.

[0010] The thin film prepared by atomic layer deposition has high density and can effectively block the diffusion of halogen anions in the active layer to the second electrode layer. In particular, it can alleviate the corrosion of halogen anions on the metal in the second electrode layer, and block the penetration of external water and oxygen into the active layer, effectively improving the performance stability and photoelectric conversion efficiency of solar cells.

[0011] In any embodiment, the thickness of the planar portion of the semi-encapsulation layer and / or the encapsulation portion of the semi-encapsulation layer is 5 nm-35 nm, and can be optionally 10 nm-30 nm.

[0012] The thickness of the semi-encapsulation layer within a suitable range can promote the transport of carriers while blocking the transport of ions, thereby simultaneously improving the thermal stability and photoelectric conversion efficiency of the solar cell.

[0013] In any embodiment, the solar cell is a formal solar cell, the active layer includes an electron transport layer, a perovskite layer and a hole transport layer stacked in sequence, the hole transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer includes a p-type semiconductor material.

[0014] The semi-encapsulation layer includes p-type semiconductor materials that block the migration of active ions in the active layer to the second electrode layer, thereby blocking the degradation of the active layer by external water and oxygen, and facilitating the migration of holes in the hole transport layer to the second electrode layer, which can simultaneously improve the performance stability and photoelectric conversion efficiency of the formal solar cell.

[0015] In any embodiment, the p-type semiconductor material includes at least one of nickel oxide, cuprous oxide, cuprous iodide, silver iodide, and molybdenum oxide.

[0016] In any embodiment, the solar cell is an inverted solar cell, the active layer includes a hole transport layer, a perovskite layer and an electron transport layer stacked in sequence, the electron transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer includes an n-type semiconductor material.

[0017] The semi-encapsulation layer includes an n-type semiconductor material with low hole mobility, which can effectively reduce the migration speed of holes. Therefore, the semi-encapsulation layer including the n-type semiconductor material can block holes, reduce carrier recombination, reduce leakage current, and improve the photoelectric conversion efficiency of the inverted solar cell while improving the stability of the solar cell.

[0018] In any embodiment, the n-type semiconductor material includes at least one of tin dioxide, titanium dioxide, zinc oxide, indium oxide, and gallium oxide.

[0019] The second aspect of the present application provides a method for preparing a solar cell, the preparation method comprising: providing a first electrode layer and an active layer stacked in sequence; preparing a semi-encapsulation layer on the upper side of the active layer and on at least one side surface of the active layer, the semi-encapsulation layer comprising a planar portion located on the upper side of the active layer and an encapsulation portion located on at least one side of the active layer, and providing a second electrode layer on the upper side of the planar portion of the semi-encapsulation layer.

[0020] In any embodiment, the preparation method specifically comprises: preparing a semi-encapsulation layer on the upper side of the active layer and at least one side surface of the active layer by atomic layer deposition, wherein the semi-encapsulation layer comprises a semiconductor material.

[0021] In any embodiment, the solar cell is a formal solar cell, the active layer includes an electron transport layer, a perovskite layer and a hole transport layer stacked in sequence, the hole transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer includes a p-type semiconductor material.

[0022] In any embodiment, the solar cell is an inverted solar cell, the active layer includes a hole transport layer, a perovskite layer and an electron transport layer stacked in sequence, the electron transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer includes an n-type semiconductor material.

[0023] A third aspect of the present application provides an electrical device, comprising a solar cell according to any embodiment or a solar cell prepared by a preparation method according to any embodiment.

[0024] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Moreover, the same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0026] Figure 1 A schematic diagram of a cross-sectional structure of a solar cell provided in some embodiments of the present application is shown;

[0027] Figure 2 A schematic diagram of the cross-sectional structure of a formal solar cell provided in some embodiments of the present application is shown;

[0028] Figure 3 A schematic cross-sectional structure diagram of an inverted solar cell provided in some embodiments of the present application is shown.

[0029] The reference numerals in the specific implementation manner are as follows:

[0030] Solar cells 1-1, 1-2, 1-3;

[0031] A first electrode layer 10;

[0032] Active layer 11, electron transport layer 111, perovskite layer 112, hole transport layer 113;

[0033] The semi-encapsulation layer 13 includes a planar portion 131 and an encapsulation portion 132 . DETAILED DESCRIPTION

[0034] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0036] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0037] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0038] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0039] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0040] In the description of the embodiments of the present application, the orientations or positional relationships indicated by technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", and "circumferential" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0041] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0042] like Figure 1 As shown, the first aspect of the present application provides a solar cell 1-1, comprising: a first electrode layer 10, an active layer 11, a second electrode layer 12, and a semi-encapsulation layer 13 stacked in sequence, the semi-encapsulation layer 13 comprising a planar portion 131 located between the active layer 11 and the second electrode layer 12 and an encapsulation portion 132 located on at least one side of the active layer 11.

[0043] In some embodiments, the first electrode layer 10 is a transparent electrode layer, and the second electrode layer 12 is a back electrode layer.

[0044] In some embodiments, the first electrode layer 10 includes at least one of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), and indium tungsten oxide (IWO).

[0045] In some embodiments, the thickness of the first electrode layer 10 is 200 nm to 1000 nm. For example, the thickness of the transparent conductive layer can be 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm or any range thereof.

[0046] In some embodiments, the second electrode layer 12 is generally a metal electrode, an inorganic electrode or a metal-inorganic electrode mixed conductive material. In some embodiments, the back electrode layer 12 comprises at least one of indium tin oxide (ITO), lanthanide metal-doped indium oxide, boron-doped zinc oxide (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W and alloys thereof, graphite, graphene, and carbon nanotubes; optionally Ag, Cu, C, Au, Al, ITO, AZO, BZO or IZO, and further optionally Cu, Ag, Au or a combination thereof.

[0047] In some embodiments, the thickness of the second electrode layer 12 is 20 nm to 200 nm. For example, the thickness of the back electrode layer can be 20 nm, 40 nm, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, 200 nm or any range thereof.

[0048] In some embodiments, the solar cell is a perovskite cell and the active layer includes a perovskite layer.

[0049] In some embodiments, the perovskite layer comprises a perovskite metal halide; the chemical formula of the perovskite metal halide is ABX 3 ; wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion. In some embodiments, A includes Cs + , K + , Rb + , one or more of a monovalent amine cation and a monovalent amidine cation, optionally, the monovalent amine cation includes CH 3 NH 3 + (Methylamine, MA + ), ammonium (NH 4 +); monovalent amidino cations include NH 2 CH=NH 2 + (Formamidine, FA + ). In some embodiments, B includes Pb 2+ Sn 2+ , Fe 2+ , Mn 2+ 、Ni 2+ ,Ge 2+ 、Co 2+ and Sb 2+ In some embodiments, X comprises a halogen anion. In some embodiments, X comprises Cl-, Br - In some embodiments, the band gap of the perovskite metal halide is 1.20 eV to 2.30 eV.

[0050] In some embodiments, the thickness of the perovskite layer is 400 nm to 1000 nm. For example, the thickness of the perovskite layer can be 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or within a range consisting of any of the above values. Optionally, the thickness of the perovskite layer is 500 nm to 900 nm.

[0051] The planar portion 131 of the encapsulation layer 13 located between the active layer 11 and the second electrode layer 12 can inhibit the migration of active ions in the active layer 11 to the second electrode layer 12; the encapsulation portion 132 of the encapsulation layer 13 located on at least one side of the active layer 11 can block external water and oxygen, reduce the degradation of the active layer 11 under the action of water and oxygen, and thereby comprehensively improve the stability of the performance of the solar cell 1.

[0052] In some embodiments, the semi-encapsulation layer 13 includes a semiconductor material.

[0053] Semiconductor materials refer to materials with semiconductor properties, and their conductivity is between conductors and insulators.

[0054] In some embodiments, the semiconductor material includes a semiconductor oxide. Semiconductor oxides are also called oxide semiconductors, and refer to a class of oxides with semiconductor properties. In some embodiments, the semiconductor oxide includes at least one of tin oxide, titanium oxide, zinc oxide, nickel oxide, and cuprous oxide.

[0055] The semi-encapsulation layer 13 includes semiconductor materials, which can suppress device efficiency attenuation and improve the performance stability of the solar cell 1 , while facilitating the migration of carriers from the active layer 11 to the second electrode layer 12 , thereby improving the photoelectric conversion efficiency of the solar cell 1 .

[0056] In some embodiments, the semi-encapsulation layer 13 is prepared by atomic layer deposition.

[0057] Atomic layer deposition is a method that can deposit materials layer by layer on the surface of a substrate in the form of a single atomic film.

[0058] The thin film prepared by the atomic layer deposition method has high density and can effectively block the diffusion of halogen anions in the active layer 11 to the second electrode layer 12, especially alleviate the corrosion of the metal in the second electrode layer 12 by the halogen anions, and block the penetration and degradation of the active layer 11 by external water and oxygen, effectively improving the performance stability and photoelectric conversion efficiency of the solar cell 1.

[0059] At the same time, the atomic layer deposition method is to alternately pass the gas phase precursor pulses into the reaction container. The first reaction precursor will be chemically adsorbed on the substrate. When the second precursor is passed into the reaction container, it will react with the previous precursor that has been adsorbed on the surface of the substrate to form a thin film. Therefore, the film formation of the atomic layer deposition method is not restricted by direction and angle. The reaction precursor can be freely adsorbed on any exposed surface of the active layer, realizing the simultaneous molding of the semi-encapsulation layer 13 in all directions, which has the characteristics of high production efficiency and low cost.

[0060] Compared with the magnetron sputtering and evaporation methods commonly used in thin film preparation, atomic layer deposition has higher density, accuracy and controllability. The active layer 11 to be deposited will not produce thermal shock under target sputtering, so that the prepared solar cell 1 has higher photoelectric conversion efficiency and stability.

[0061] In some embodiments, the thickness of the planar portion 131 of the semi-encapsulation layer and / or the encapsulation portion 132 of the semi-encapsulation layer is 5 nm-35 nm, and may be 10 nm-30 nm.

[0062] In some embodiments, the thickness of the planar portion 131 of the semi-encapsulation layer and / or the encapsulation portion 132 of the semi-encapsulation layer is 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, or any value therebetween.

[0063] In some embodiments, the thickness of the planar portion 131 of the semi-encapsulation layer and the encapsulation portion 132 of the semi-encapsulation layer are the same.

[0064] The thickness of the semi-encapsulation layer within a suitable range can promote the transport of carriers while blocking the transport of ions, thereby simultaneously improving the thermal stability and photoelectric conversion efficiency of the solar cell.

[0065] In some embodiments, Figure 2As shown, the solar cell 1-2 is a formal solar cell, and the active layer 11 includes an electron transport layer 111, a perovskite layer 112 and a hole transport layer 113 stacked in sequence, and the hole transport layer 113 is located between the perovskite layer 112 and the semi-encapsulation layer 13; the semi-encapsulation layer 13 includes a p-type semiconductor material.

[0066] In p-type semiconductor materials, the main carriers are holes.

[0067] In some embodiments, the p-type semiconductor material includes at least one of nickel oxide, cuprous oxide, cuprous iodide, silver iodide, and molybdenum oxide.

[0068] The semi-encapsulation layer 13 includes a p-type semiconductor material that blocks the migration of active ions in the active layer 11 to the second electrode layer 12, thereby blocking the degradation of the active layer 11 by external water and oxygen, and facilitating the migration of holes in the hole transport layer 113 to the second electrode layer 12, thereby being able to simultaneously improve the performance stability and photoelectric conversion efficiency of the formal solar cell 1.

[0069] In some embodiments, Figure 3 As shown, the solar cell 1-3 is an inverted solar cell, and the active layer 11 includes a hole transport layer 113, a perovskite layer 112 and an electron transport layer 111 stacked in sequence, and the electron transport layer 111 is located between the perovskite layer 112 and the semi-encapsulation layer 13; the semi-encapsulation layer 13 includes an n-type semiconductor material.

[0070] N-type semiconductor material is also called electronic type semiconductor material, that is, an impurity semiconductor material in which the concentration of free electrons is much greater than the concentration of holes.

[0071] The semi-encapsulation layer 13 includes an n-type semiconductor material with low hole mobility, which can effectively reduce the migration speed of holes. Therefore, the semi-encapsulation layer including the n-type semiconductor material can block holes, reduce carrier recombination, reduce leakage current, and improve the photoelectric conversion efficiency of the inverted solar cell while improving the stability of the device.

[0072] In some embodiments, the n-type semiconductor material includes at least one of tin dioxide, titanium dioxide, zinc oxide, indium oxide, and gallium oxide.

[0073] In some embodiments, the electron transport layer 111 includes at least one of the following materials and their derivatives: [6,6]-phenyl-C61-butyric acid isomethyl ester (PC 61 BM), [6,6]-phenyl C71 butyric acid methyl ester (PC 71 BM), fullerene C60 (C60), fullerene C70 (C70), tin dioxide (SnO 2 ), zinc oxide (ZnO).

[0074] In some embodiments, the hole transport layer 113 includes at least one of the following materials and their derivatives: BTPA series hole transport materials, poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), 2,2',7,7'-tetrakis [N,N-di (4-methoxyphenyl) amino] -9,9'-spirobifluorene (Spiro-OMeTAD), poly-3-hexylthiophene (P 3 HT), triphenylamine with triptycene as the core (H 101 ), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-anilino)carbazole-spirobifluorene (CzPAF-SBF), poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS), polythiophene, nickel oxide (NiOx), molybdenum oxide (MoO 3 ), cuprous iodide (CuI), cuprous oxide (Cu 2 O).

[0075] The second aspect of the present application provides a method for preparing a solar cell, the preparation method comprising: providing a first electrode layer and an active layer stacked in sequence; preparing a semi-encapsulation layer on the upper side of the active layer and on at least one side surface of the active layer, the semi-encapsulation layer comprising a planar portion located on the upper side of the active layer and an encapsulation portion located on at least one side of the active layer, and providing a second electrode layer on the upper side of the planar portion of the semi-encapsulation layer.

[0076] In some embodiments, the preparation method specifically includes: preparing a semi-encapsulation layer on the upper side of the active layer and at least one side surface of the active layer by atomic layer deposition, wherein the semi-encapsulation layer includes a semiconductor material.

[0077] In some embodiments, the method for forming the semi-encapsulation layer includes using a metal source and an oxygen source to react to achieve atomic layer deposition to prepare a semiconductor material.

[0078] In some embodiments, the metal source includes at least one of an organic tin source, an organic nickel source, an organic copper source, an organic zinc source, and an organic titanium source.

[0079] In some embodiments, the oxygen source includes at least one of water and ozone.

[0080] In some embodiments, the solar cell is a formal solar cell, and the active layer includes an electron transport layer, a perovskite layer, and a hole transport layer stacked in sequence, the hole transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer includes a p-type semiconductor material.

[0081] In some embodiments, the solar cell is an inverted solar cell, and the active layer includes a hole transport layer, a perovskite layer, and an electron transport layer stacked in sequence, wherein the electron transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer includes an n-type semiconductor material.

[0082] A third aspect of the present application provides an electrical device, comprising a solar cell according to any embodiment or a solar cell prepared by a preparation method according to any embodiment.

[0083] In some embodiments, the solar cell can be used as a power generation device for the power-generating device. The type of power generation device can include but is not limited to integrated power generation.

[0084] The electrical devices may include mobile devices such as mobile phones, tablet computers, laptop computers, calculators, watches, cars, electric trains, ships and satellites, power generation systems, etc., but are not limited thereto.

[0085] The location of the power generation device may include but is not limited to the roof, back panel, etc. of the car.

[0086] The following examples more specifically describe the disclosure of the present application, which are intended for illustrative purposes only, as it will be apparent to those skilled in the art that various modifications and variations are possible within the scope of the disclosure of the present application. Unless otherwise stated, all parts, percentages, and ratios reported in the following examples are by weight, and all reagents used in the examples are commercially available or synthesized according to conventional methods and can be used directly without further processing, and the instruments used in the examples are commercially available.

[0087] Example

[0088] Preparation method

[0089] Example 1

[0090] The present invention provides a method for manufacturing a solar cell, which comprises the following steps:

[0091] Take a 2.0 cm × 2.0 cm FTO conductive glass, remove 0.35 cm of FTO at both ends by laser etching, and expose the glass substrate;

[0092] The etched FTO conductive glass was ultrasonically cleaned several times with water, acetone, and isopropanol in sequence;

[0093] The FTO conductive glass was blown dry of solvent under a nitrogen gun and placed in a UV ozone machine for further cleaning;

[0094] SnO was spin-coated at a rate of 4000 rpm / s on the UV-ozone treated FTO substrate. 2 The colloidal solution was annealed on a hot plate at 150 °C for 10 min to serve as an electron transport layer;

[0095] The perovskite layer was prepared by a one-step method: the perovskite precursor solution was spin-coated on the prepared electron transport layer at a speed of 4000 rpm for 30 seconds, 400 uL of anti-solvent chlorobenzene was added dropwise around the 10th second after the spin coating, and the product was placed on a hot plate and annealed at 110°C for 60 minutes to obtain a perovskite layer with a thickness of 500 nm.

[0096] A chlorobenzene solution of 72 mg / ml hole transport material 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine))9,9′-spirobifluorene (Spiro-OMeTAD) was prepared and stirred to completely dissolve, and 100 uL was spin-coated on the surface of the perovskite layer at a speed of 4000 rpm to obtain a hole transport layer with a thickness of about 170 nm; the electron transport layer, the perovskite layer and the hole transport layer together constitute an active layer;

[0097] Using nickel diacetylacetonate as a nickel source and water as an oxygen source, nickel oxide (NiOx) with a thickness of 20 nm was prepared on the upper surface of the hole transport layer and the side surface of the active layer by atomic layer deposition as a semi-encapsulation layer;

[0098] The above products were placed in the evaporation apparatus and the evaporation vacuum degree was set to 5×10 -4 Pa, and evaporate 80nm of Cu metal back electrode at a rate of 0.1A / s to obtain a solar cell.

[0099] The preparation method of Example 2 is basically the same as that of Example 1, except that in Example 2, Cu(I)(hfac)(TMVS) is used as the copper source, water is used as the oxygen source, and atomic layer deposition is used to prepare cuprous oxide with a thickness of 20 nm on the upper surface of the hole transport layer and the side surface of the active layer as a semi-encapsulation layer.

[0100] The preparation method of Example 3 is basically the same as that of Example 1, except that in Example 3, SiCl 4 As the silicon source and water as the oxygen source, silicon dioxide with a thickness of 20 nm was prepared on the upper surface of the hole transport layer and the side surface of the active layer by atomic layer deposition as a semi-encapsulation layer.

[0101] The preparation methods of Examples 4-7 are basically the same as those of Example 1, except that the atomic layer deposition time is adjusted to adjust the thickness of the semi-encapsulation layer. The specific parameters are shown in Table 1.

[0102] In Example 8, magnetron sputtering was used to adjust the relative angle between the target material and the deposition surface to deposit nickel oxide with a thickness of 20 nm on the upper surface of the hole transport layer and the side surface of the active layer.

[0103] Comparative Example 1:

[0104] The preparation method is the same as that of Example 1, except that the semi-encapsulation layer is not deposited.

[0105] Comparative Example 2:

[0106] The preparation method is the same as that of Example 3, except that the semi-encapsulation layer is deposited on the upper surface of the hole transport layer by spin coating.

[0107] Comparative Example 3:

[0108] The preparation method is the same as that of Example 8, except that the semi-encapsulation layer is deposited on the upper surface of the hole transport layer by magnetron sputtering.

[0109] Embodiment 11

[0110] The present invention provides a method for manufacturing an inverted solar cell, the method comprising the following steps:

[0111] Take a 2.0 cm × 2.0 cm FTO conductive glass, remove 0.35 cm of FTO at both ends by laser etching, and expose the glass substrate;

[0112] The etched FTO conductive glass was ultrasonically cleaned several times with water, acetone, and isopropanol in sequence;

[0113] The FTO conductive glass was blown dry of solvent under a nitrogen gun and placed in a UV ozone machine for further cleaning;

[0114] NiOx with a thickness of about 30 nm was prepared by magnetron sputtering and annealed at 300°C for 60 min to obtain a hole transport layer.

[0115] The perovskite layer was prepared by a one-step method: the perovskite precursor solution was spin-coated on the prepared hole transport layer at a speed of 4000 rpm for 30 seconds, 400 uL of anti-solvent chlorobenzene was added dropwise around the 10th second after the spin coating, and the product was placed on a hot plate and annealed at 110°C for 60 minutes to obtain a perovskite layer with a thickness of 500 nm.

[0116] The above products were placed in the evaporation apparatus and the evaporation vacuum degree was set to 5×10 -4 Pa below, 30nmC was evaporated at a rate of 0.05A / s 60 As an electron transport layer; the electron transport layer, perovskite layer and hole transport layer together constitute the active layer;

[0117] Using tetra(dimethylamino)tin as the tin source and water as the oxygen source, SnO with a thickness of 20 nm was deposited on the upper surface of the electron transport layer and the active side by atomic layer deposition. 2 , as a semi-encapsulation layer;

[0118] The above products were placed in the evaporation apparatus and the evaporation vacuum degree was set to 5×10 -4 Pa, and evaporate 80nm of Cu metal back electrode at a rate of 0.1A / s to obtain a solar cell.

[0119] The preparation method of Example 12 is basically the same as that of Example 11, except that in Example 12, Ti(NMe 2 ) 4 The titanium source is titanium, water is oxygen source, and atomic layer deposition is used to prepare titanium oxide with a thickness of 20 nm on the upper surface of the electron transport layer and the side surface of the active layer as a semi-encapsulation layer.

[0120] The preparation method of Example 13 is substantially the same as that of Example 11, except that in Example 13, ZnMe 2 As the zinc source and water as the oxygen source, zinc dioxide with a thickness of 20 nm was prepared on the upper surface of the electron transport layer and the side surface of the active layer by atomic layer deposition as a semi-encapsulation layer.

[0121] The preparation method of Example 14 is basically the same as that of Example 11, except that in Example 14, SiCl 4 As the silicon source and water as the oxygen source, silicon dioxide with a thickness of 20 nm was prepared on the upper surface of the electron transport layer and the side surface of the active layer by atomic layer deposition as a semi-encapsulation layer.

[0122] The preparation methods of Examples 15-18 are basically the same as those of Example 1, except that the atomic layer deposition time is adjusted to adjust the thickness of the semi-encapsulation layer. The specific parameters are shown in Table 3.

[0123] In Example 19, magnetron sputtering was used to deposit tin dioxide with a thickness of 20 nm on the upper surface of the electron transport layer and the side surface of the active layer by adjusting the relative angle between the target material and the deposition surface.

[0124] Comparative Example 11:

[0125] The preparation method is the same as that of Example 11, except that the semi-encapsulation layer is not deposited.

[0126] Comparative Example 12:

[0127] The preparation method is the same as that of Example 14, except that the semi-encapsulation layer is deposited on the upper surface of the hole transport layer by spin coating.

[0128] Comparative Example 13:

[0129] The preparation method is the same as that of Example 19, except that the semi-encapsulation layer is deposited on the upper surface of the electron transport layer by magnetron sputtering.

[0130] Test Method

[0131] 1. Photoelectric conversion efficiency test

[0132] The battery performance was tested using Keithley 2400 SMU, AM 1.5G solar radiation test system under a light source of 100 mW / cm2. The photoelectric conversion efficiency was calculated as follows:

[0133] PCE=Pout / Popt

[0134] =Voc×Jsc×(Vmpp×Jmpp) / (Voc×Jsc×Popt)

[0135] =Voc×Jsc×FF / Popt

[0136] Where Pout(mW / cm 2 )、Popt(mW / cm 2 )、Vmpp(V)、Jmpp(mA / cm 2 ), Voc(V) and Jsc(mA / cm 2 ) are the battery output power, incident light power, battery maximum power point voltage, battery maximum power point current, open circuit voltage and short circuit current density. Jsc short circuit current density is calculated by dividing the short circuit current by the solar cell area.

[0137] 2. Stability test

[0138] The solar cell was placed on a hot plate at 65°C and heated continuously. The change of its photoelectric conversion efficiency with aging time was tracked. The time required for its photoelectric conversion efficiency to decay to 80% of the initial efficiency was recorded as T80. The size of this parameter indicates the thermal stability of the perovskite solar cell.

[0139] Test Results

[0140] Table 1

[0141]

[0142] Table 2

[0143]

[0144] The examples and comparative examples in Table 1 and Table 2 are all formal solar cells. From the comparison between Examples 1-8 and Comparative Examples 1-3, it can be seen that the semi-encapsulation layer including a planar portion located between the active layer and the second electrode layer and an encapsulation portion located on at least one side of the active layer is provided between the hole transport layer and the second electrode layer of the formal solar cell, which can effectively improve the stability of the solar cell. From Examples 1-3, it can be seen that the formal solar cell includes p-type semiconductor materials such as nickel oxide and cuprous oxide, compared with the insulator silicon dioxide, the solar cell has improved stability and improved photoelectric conversion efficiency.

[0145] As can be seen from Examples 4-7, when the thickness of the planar portion of the semi-encapsulation layer of the formal solar cell and / or the encapsulation portion of the semi-encapsulation layer is 5nm-35nm, the solar cell has high stability and photoelectric conversion efficiency. When the thickness of the planar portion of the semi-encapsulation layer of the formal solar cell and / or the encapsulation portion of the semi-encapsulation layer is 10nm-30nm, the stability and photoelectric conversion efficiency of the solar cell are further improved.

[0146] From the comparison between Example 1 and Example 8, it can be seen that the stability and photoelectric conversion efficiency of the solar cell can be further improved by using the atomic layer deposition method compared with the magnetron sputtering method to prepare the semi-encapsulation layer.

[0147] Table 3

[0148]

[0149] Table 4

[0150]

[0151] The embodiments and comparative examples in Table 3 and Table 4 are all inverted solar cells. From the comparison between Embodiments 11-19 and Comparative Examples 11-13, it can be seen that the semi-encapsulation layer including a planar portion located between the active layer and the second electrode layer and an encapsulation portion located on at least one side of the active layer is provided between the electron transport layer and the second electrode layer of the inverted solar cell, which can effectively improve the stability of the solar cell.

[0152] It can be seen from Examples 11-14 that the inverted solar cell includes n-type semiconductor materials such as tin dioxide, titanium dioxide, and zinc dioxide. Compared with the insulator silicon dioxide, the solar cell has improved stability and photoelectric conversion efficiency.

[0153] It can be seen from Examples 15-18 that when the thickness of the planar portion of the semi-encapsulation layer of the inverted solar cell and / or the encapsulation portion of the semi-encapsulation layer is 5nm-35nm, the solar cell has high stability and photoelectric conversion efficiency. When the thickness of the planar portion of the semi-encapsulation layer of the inverted solar cell and / or the encapsulation portion of the semi-encapsulation layer is 10nm-30nm, the stability and photoelectric conversion efficiency of the solar cell are further improved.

[0154] From the comparison between Example 11 and Example 19, it can be seen that the stability and photoelectric conversion efficiency of the solar cell can be further improved by using the atomic layer deposition method compared with the magnetron sputtering method to prepare the semi-encapsulation layer.

[0155] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A solar cell, characterized in that: include: A first electrode layer, an active layer, and a second electrode layer are sequentially stacked, and A semi-encapsulation layer includes a planar portion located between the active layer and the second electrode layer and an encapsulation portion at least partially located on at least one side of the active layer.

2. The solar cell according to claim 1, characterized in that The semi-encapsulation layer includes a semiconductor material.

3. The solar cell according to claim 1 or 2, characterized in that: The semi-encapsulation layer is prepared by atomic layer deposition.

4. The solar cell according to any one of claims 1 to 3, characterized in that The thickness of the planar portion of the semi-encapsulation layer and / or the encapsulation portion of the semi-encapsulation layer is 5nm-35nm, and can be optionally 10nm-30nm.

5. The solar cell according to any one of claims 1 to 4, characterized in that The solar cell is a formal solar cell, the active layer comprises an electron transport layer, a perovskite layer and a hole transport layer stacked in sequence, the hole transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer comprises a p-type semiconductor material.

6. The solar cell according to claim 5, characterized in that: The p-type semiconductor material includes at least one of nickel oxide, cuprous oxide, cuprous iodide, silver iodide, and molybdenum oxide.

7. The solar cell according to any one of claims 1 to 4, characterized in that The solar cell is an inverted solar cell, the active layer comprises a hole transport layer, a perovskite layer and an electron transport layer stacked in sequence, the electron transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer comprises an n-type semiconductor material.

8. The solar cell according to claim 7, characterized in that: The n-type semiconductor material includes at least one of tin dioxide, titanium dioxide, zinc oxide, indium oxide, and gallium oxide.

9. A method for preparing a solar cell, characterized in that: The preparation method comprises: Providing a first electrode layer and an active layer stacked in sequence; A semi-encapsulation layer is prepared on the upper side of the active layer and at least one side surface of the active layer, wherein the semi-encapsulation layer includes a planar portion located on the upper side of the active layer and an encapsulation portion located on at least one side surface of the active layer. A second electrode layer is provided on an upper side of the planar portion of the semi-encapsulation layer.

10. The preparation method according to claim 9, characterized in that: The preparation method specifically comprises: A semi-encapsulation layer is prepared on the upper side of the active layer and at least one side surface of the active layer by atomic layer deposition, wherein the semi-encapsulation layer includes a semiconductor material.

11. The preparation method according to claim 9 or 10, characterized in that: The solar cell is a formal solar cell, the active layer comprises an electron transport layer, a perovskite layer and a hole transport layer stacked in sequence, the hole transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer comprises a p-type semiconductor material.

12. The preparation method according to claim 9 or 10, characterized in that: The solar cell is an inverted solar cell, the active layer comprises a hole transport layer, a perovskite layer and an electron transport layer stacked in sequence, the electron transport layer is located between the perovskite layer and the semi-encapsulation layer; the semi-encapsulation layer comprises an n-type semiconductor material.

13. An electrical device, comprising the solar cell according to any one of claims 1 to 8 or the solar cell prepared by the preparation method according to any one of claims 9 to 12.

Images