MEMS probe insulation process

Abstract

The invention discloses an MEMS (Micro Electro Mechanical System) probe insulation process in the field of semiconductor probes, which comprises the following steps: putting a product into a vacuum chamber, vacuumizing until the pressure in the chamber is 3.0 E-4-9.0 E-4 Pa, heating a substrate at the temperature of 650-800 DEG C, introducing Ar gas with the flow of 150-200sccm, and electrifying to excite plasma; setting a certain period of time and only introducing Ar gas, so that the Ar gas bombards to remove possible pollution on the surface of the target material, and the prepared SIN film is prevented from containing impurities; and then N2 gas with the flow of 60-100 sccm is introduced, sputtered Si atoms and N atoms react in the cavity to generate SIN, and the SIN is deposited to the surface of the product to form a thin film. According to the invention, the problem of short circuit caused by contact between the probes during testing is solved.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor probes, and in particular relates to a MEMS probe insulation process. Background Art

[0002] In the development of the semiconductor industry, probe testing can not only verify the deficiencies in chip design, but also screen out defective products on unpackaged wafers, thereby improving yield and reducing costs. Therefore, test probes play an important role in controlling the quality of semiconductor products.

[0003] With the continuous advancement of semiconductor technology, miniaturization and integration have become the main trends in the development of semiconductor chips, and the requirements for chip fine pitch (finebitch) are getting higher and higher. Compared with traditional probes, MEMS probes have advantages such as small size, small contact force, array arrangement, and high conductivity. These advantages enable MEMS probes to avoid damage to the object being tested, while meeting the testing requirements of fine pitch, high density, and high number of pins, and have broad development prospects.

[0004] The pitch between MEMS probes is small, and they will bend during the test. The bending shape of each probe is not completely consistent, so it is easy for the probes to touch each other during the bending process, causing a short circuit and failure. How to avoid short circuits caused by contact between probes is a problem that MEMS probes must overcome in practical applications.

[0005] Growing a nanoscale insulating film layer on the surface of the MEMS probe is a development trend to overcome this problem. In MEMS probes, there is only one way to prepare parylene insulating film using vacuum evaporation. This method has low preparation efficiency and poor film quality. There is still no more efficient and high-quality solution in the current industry. Summary of the invention

[0006] The purpose of the present invention is to provide a MEMS probe insulation process. The preparation method uses reactive magnetron sputtering to sputter a SIN (silicon nitride) insulating film layer on the surface of the MEMS probe to solve the problem of short circuit caused by contact between probes during testing.

[0007] The object of the present invention is achieved by: a MEMS probe insulation process, characterized in that it includes the following steps (1) placing a fixture equipped with a plurality of MEMS probes on a rotating bracket in a magnetron sputtering coating device, the rotating bracket being located in a working chamber inside the magnetron sputtering coating device, and closing a main door of the magnetron sputtering coating device to seal the working chamber; (2. Evacuate the working chamber until the pressure inside the chamber is 3.0E -4 ~ 9.0E -4Pa, heating the interior of the working chamber to raise the temperature to 650-800°C; (3) Ar gas is introduced into the working chamber at a flow rate of 150-200 sccm for 5-20 minutes, and the magnetron sputtering coating device is powered on to excite the Ar gas into plasma; (4) While Ar gas is still being introduced into the working chamber, N2 gas is continuously introduced into the working chamber at a flow rate of 60-100 sccm for 10-15 min. At the same time, the rotating bracket drives the fixture to rotate at a speed of 20-50 r / min. The sputtered Si atoms react with N atoms in the working chamber to generate SIN, which is deposited on the surface of the MEMS probe on the fixture to form a thin film. (5) After the sputtering is completed, the MEMS probe on the fixture is cooled down in a vacuum state in the working chamber. When the temperature is lower than 80°C, the vacuum is broken and the MEMS probe installed on the fixture is taken out.

[0008] The MEMS probe magnetron sputtering coating equipment of the present invention is equipped with a vacuum chamber, an ion pump, a high vacuum molecular pump, a rotating base, a refrigerator, and circulating cooling water; the sputtering target uses 99.99% pure Si; the gas selects 99.99% pure Ar as the sputtering gas, and 99.99% pure N2 as the reaction gas.

[0009] During operation, place the product in a vacuum chamber and evacuate the chamber until the pressure is 3.0E. -4 -9.0E -4 Pa, heat the substrate to 650-800°C, introduce Ar gas with a flow rate of 150-200sccm, and turn on the power to excite the plasma. At this time, the ionized Ar+ will hit the target material under the interaction of the electric field and the magnetic field, sputtering out the Si atoms of the target material. Set a certain time to only introduce Ar gas, so that it bombards and removes possible contamination on the surface of the target material to avoid impurities in the prepared SIN film. Then introduce N2 gas with a flow rate of 60-100sccm. At this time, the base on which the product is placed begins to rotate, and the sputtered Si atoms react with N atoms in the cavity to generate SIN, which is deposited on the surface of the product to form a thin film.

[0010] Compared with the prior art, the invention has the following beneficial effects: the material used for the insulating film - SIN has very good insulation performance, and the resistivity can be as high as 10 14Ω·cm, far exceeding many common insulating materials. SIN film also has high hardness, high thermal stability, good chemical corrosion resistance, and can adapt to various working environments. In the semiconductor industry, its optical properties are mostly used in solar cells, and its insulating properties are not used as an insulating layer for test probes. In addition, the insulating film prepared by the selected magnetron sputtering method has better adhesion and higher density than the evaporation method, which to a certain extent makes up for the defect of the SIN film's own weak adhesion.

[0011] As a further improvement of the present invention, the magnetron sputtering coating device is provided with an exhaust system, which is connected to the working chamber. The exhaust system composed of an ion pump and a molecular pump makes the working chamber reach a vacuum state; the temperature control system of the device controls the heater to heat the working chamber; the device is provided with a circulating cooling water valve, where the cooling water entering the device is controlled and diverted to various areas in the device; the electrical control box of the device controls various circuit devices.

[0012] As a further improvement of the present invention, the working chamber is located in the shell of the magnetron sputtering coating device, an openable main door is provided on the front side of the shell corresponding to the working chamber, and an openable side door is provided on the left and right sides of the shell corresponding to the working chamber, respectively. The rotating bracket in the working chamber includes a circular upper turntable and a lower turntable, a connecting rod is vertically provided between the centers of the upper turntable and the lower turntable, an upper rotating shaft is provided on the upper side of the upper turntable, and a lower rotating shaft is provided on the lower side of the lower turntable, the upper rotating shaft is rotatably connected to the shell and the upper rotating shaft passes through the shell and is transmission-connected to the reduction motor via a coupling, and the lower rotating shaft is rotatably connected to the shell. Magnetic fields and electric fields are distributed in the working chamber, and the MEMS probe is fixed on the rotating bracket via a fixture. By driving the MEMS probe to rotate, the sputtered SIN film is made more uniform. As a further improvement of the present invention, a target material is provided on the surface of one side of the side door close to the working chamber, and the target material is Si with a purity of 99.99%. A cavity is provided inside the side door, and a cathode plate is provided in the cavity. The purity of Ar gas is 99.99%, and the purity of N2 is 99.99%.

[0013] As a further improvement of the present invention, the lower turntable is provided with an installation cavity inside, a vertical central axis is rotatably provided inside the installation cavity, the central axis is coaxial with the connecting rod, a large gear is sleeved on the central axis, a plurality of vertical pinion shafts are rotatably provided in the installation cavity and located outside the large gear, each pinion shaft is equally spaced and distributed around the large gear, a pinion shaft is sleeved with a small gear, each small gear is meshed with the large gear, a through groove is provided on the side of the lower turntable corresponding to any small gear, an L-shaped support is provided at the bottom of the lower turntable, a driving motor is vertically provided on the support, a driving gear is provided at the output end of the driving motor, the inner edge of the driving gear passes through the through groove and meshes with the corresponding small gear. The reduction motor drives the rotating bracket to rotate as a whole, the driving motor drives any small gear to rotate, the small gear drives the large gear to rotate, and the large gear drives the remaining small gears to rotate.

[0014] As a further improvement of the present invention, the lower turntable is provided with a plurality of lower mounting seats evenly distributed along the circumferential direction, each lower mounting seat is arranged one by one corresponding to each pinion shaft, a rotation hole is provided through the middle of the lower mounting seat, a plane bearing is provided at the bottom of the large diameter hole of the rotation hole, the bottom of the lower connecting sleeve is fitted into the rotation groove and supported on the plane bearing, a coupling head passing through the small diameter hole of the rotation hole is provided at the lower end of the lower connecting sleeve, and the coupling head is connected to the corresponding pinion shaft, and the upper turntable is provided with a plurality of upper mounting holes evenly distributed along the circumferential direction, and the upper mounting holes include edge holes and round holes. The lower connecting sleeve is driven to rotate by the pinion shaft, thereby driving the lower mounting shaft to rotate.

[0015] As a further improvement of the present invention, the fixture includes a rectangular main board, a mounting plate is fixed on the main board via fasteners, a plurality of MEMS probes are arranged on the mounting plate, a vertical upper mounting shaft and a lower mounting shaft are respectively arranged on the upper and lower sides of the main board, an external thread is arranged on the upper end of the upper mounting shaft and the lower end of the lower mounting shaft, the lower mounting shaft is threadedly connected to the inner wall of the corresponding lower connecting sleeve, the outer diameter of the upper mounting shaft is smaller than the width of the edge hole, an upper mounting seat is arranged corresponding to each upper mounting shaft, a rotatable upper connecting sleeve is arranged in the upper mounting seat, the upper mounting shaft is threadedly connected to the inner wall of the corresponding upper connecting sleeve, a flange is arranged on the outer periphery of the lower end of the upper mounting seat, and the flange is fixedly connected to the upper turntable via a number of fasteners. When the fixture is installed, the lower end of the lower mounting shaft is first connected to the lower connecting sleeve, and then the upper mounting shaft passing through the edge hole is connected to the upper connecting sleeve, and finally the flange is fixedly connected to the upper turntable via fasteners. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of the present invention.

[0017] Figure 2 Schematic diagram of the structure of the working chamber.

[0018] Figure 3 It is a schematic diagram of the structure of the lower turntable.

[0019] Figure 4 for Figure 3 Enlarged view of point B in the middle.

[0020] Figure 5 for Figure 2 Enlarged view of point A in the middle.

[0021] Figure 6 It is a top view of the large gear and each small gear.

[0022] Figure 7 It is a three-dimensional structural diagram of the rotating bracket.

[0023] Figure 8 This is a top view of the upper turntable.

[0024] Fig. 9 It is a cross-sectional view of the working chamber in the horizontal direction.

[0025] Fig.10 This is the front view of the side door.

[0026] Fig.11 This is a side view of the side door.

[0027] Among them, 1 electric control box, 2 exhaust system, 3 circulating cooling water valve, 4 main door, 5 fixture, 5a mainboard, 5b upper mounting shaft, 5c lower mounting shaft, 6 side door, 7 rotating bracket, 7a upper turntable, 7b lower turntable, 7c connecting rod, 8 temperature control system, 9 MEMS probe, 10 working chamber, 11 shell, 12 upper rotating shaft, 13 lower rotating shaft, 14 coupling, 15 reduction motor, 16 target material, 17 center shaft, 18 large gear, 19 small gear shaft, 20 small gear, 21 through groove, 22 support, 23 drive motor, 24 drive gear, 25 lower mounting seat, 26 rotating hole, 27 plane bearing, 28 lower connecting sleeve, 28a connecting head, 29 upper mounting hole, 29a edge hole, 29b round hole, 30 mounting plate, 31 upper mounting seat, 31a flange, 32 upper connecting sleeve. DETAILED DESCRIPTION Example 1

[0028] like Figure 1-11 As shown, the MEMS probe insulation process of this embodiment includes the following steps (1) placing a jig 5 equipped with a plurality of MEMS probes 9 on a rotating bracket 7 in a magnetron sputtering coating device, wherein the rotating bracket 7 is located in a working chamber 10 inside the magnetron sputtering coating device, and closing a main door 4 of the magnetron sputtering coating device to seal the working chamber 10; (2. Evacuate the working chamber 10 until the pressure inside the chamber is 3.0E -4 Pa, heating the interior of the working chamber 10 to 650° C.; heating the substrate to 650° C.; (3) Ar gas is introduced into the working chamber 10 at a flow rate of 150 sccm for 20 minutes, and the magnetron sputtering coating device is powered on to excite the Ar gas into plasma; at this time, Ar gas is ionized to generate Ar + It will hit the target 16 under the interaction of the electric field and the magnetic field, sputtering out Si atoms of the target 16, and the cathode plate can attract Ar + Move toward the target 16 on the side door 6; set a certain time to allow only Ar gas to pass through so that Ar + Bombarding to remove possible contamination on the surface of the target material 16, so as to prevent the prepared SIN film from containing impurities; (4) While Ar gas is still introduced into the working chamber 10, N2 gas is continuously introduced into the working chamber 10 at a flow rate of 100 sccm for 10 min. At the same time, the rotating bracket 7 drives the fixture 5 to rotate at a speed of 20 r / min. The sputtered Si atoms react with the N atoms in the working chamber 10 to generate SIN, which is deposited on the surface of the MEMS probe 9 on the fixture 5 to form a thin film. (5) After the sputtering is completed, the MEMS probe 9 on the fixture 5 is cooled in a vacuum state in the working chamber 10. When the temperature is lower than 80° C., the vacuum is broken and the MEMS probe 9 mounted on the fixture 5 is taken out.

[0029] The magnetron sputtering coating device is provided with an exhaust system 2, which is connected to the working chamber 10. The exhaust system 2, which is composed of an ion pump and a molecular pump, makes the working chamber 10 reach a vacuum state; the temperature control system 8 of the device controls the heater to heat the working chamber 10; the device is provided with a circulating cooling water valve 3, where the cooling water entering the device is controlled and diverted to various areas in the device; the electrical control box 1 of the device controls various circuit devices.

[0030] The working chamber 10 is located in a shell 11 of the magnetron sputtering coating device. An openable main door 4 is provided on the shell 11 corresponding to the front side of the working chamber 10. An openable side door 6 is provided on the left and right sides of the shell 11 corresponding to the working chamber 10. The rotating bracket 7 in the working chamber 10 includes a circular upper turntable 7a and a lower turntable 7b. A connecting rod 7c is vertically provided between the centers of the upper turntable 7a and the lower turntable 7b. An upper rotating shaft 12 is provided on the upper side of the upper turntable 7a, and a lower rotating shaft 13 is provided on the lower side of the lower turntable 7b. The upper rotating shaft 12 is rotatably connected to the shell 11 and the upper rotating shaft 12 passes through the shell 11 and is transmission-connected to the reduction motor 15 via a coupling 14. The lower rotating shaft 13 is rotatably connected to the shell 11. A magnetic field and an electric field are distributed in the working chamber 10. The MEMS probe 9 is fixed on the rotating bracket 7 via the fixture 5. By driving the MEMS probe 9 to rotate, the sputtered SIN film is made more uniform. A target material 16 is provided on the surface of the side door 6 close to the working chamber 10. The target material 16 is Si with a purity of 99.99%. A cavity is provided inside the side door 6. A cathode plate is provided in the cavity. The purity of Ar gas is 99.99%, and the purity of N2 is 99.99%.

[0031] The lower turntable 7b is provided with a mounting cavity inside, and a vertical central shaft 17 is rotatably provided inside the mounting cavity. The central shaft 17 is coaxial with the connecting rod 7c, and a large gear 18 is sleeved on the central shaft 17. A plurality of vertical pinion shafts 19 are rotatably provided on the periphery of the large gear 18 in the mounting cavity. Each pinion shaft 19 is equally spaced and distributed around the periphery of the large gear 18. A pinion 20 is sleeved on the pinion shaft 19, and each pinion 20 is meshed with the large gear 18. A through groove 21 is provided on the side of the lower turntable 7b corresponding to any pinion. An L-shaped support 22 is provided at the bottom of the lower turntable 7b, and a driving motor 23 is vertically provided on the support 22. A driving gear 24 is provided at the output end of the driving motor 23. The inner edge of the driving gear 24 passes through the through groove 21 and meshes with the corresponding pinion. The reduction motor 15 drives the rotating bracket 7 to rotate as a whole, the driving motor 23 drives any pinion to rotate, the pinion drives the large gear 18 to rotate, and the large gear 18 drives the remaining pinions to rotate. The lower turntable 7b is provided with a plurality of lower mounting seats 25 evenly distributed along the circumferential direction, each lower mounting seat 25 is arranged one by one corresponding to each pinion shaft 19, a rotation hole 26 is penetrated through the middle of the lower mounting seat 25, a plane bearing 27 is provided at the bottom of the large diameter hole of the rotation hole 26, the bottom of the lower connecting sleeve 28 is fitted into the rotation groove and supported on the plane bearing 27, the lower end of the lower connecting sleeve 28 is provided with a coupling head 28a passing through the small diameter hole of the rotation hole 26, the coupling head 28a is connected to the corresponding pinion shaft 19, and the upper turntable 7a is provided with a plurality of upper mounting holes 29 evenly distributed along the circumferential direction, the upper mounting holes 29 include edge holes 29a and round holes 29b. The lower connecting sleeve 28 is driven to rotate by the pinion shaft 19, driving the lower mounting shaft 5c to rotate.

[0032] The fixture 5 includes a rectangular main board 5a, on which a mounting plate 30 is fixed by fasteners, and a plurality of MEMS probes 9 are arranged on the mounting plate 30. 3200 probes are arranged vertically on each mounting plate, evenly distributed, and the gap between two needles is 0.1mm; the needle length is 6-7mm, the width is 0.03-0.04mm, and the thickness is 0.03-0.04mm; each mounting plate is divided into 32 places, with 100 needles in each place; the upper and lower sides of the main board 5a are respectively provided with a vertical upper mounting shaft 5b and a lower mounting shaft 5c, The upper end of the mounting shaft 5b and the lower end of the lower mounting shaft 5c are both provided with external threads, the lower mounting shaft 5c is threadedly connected to the inner wall of the corresponding lower connecting sleeve 28, the outer diameter of the upper mounting shaft 5b is smaller than the width of the edge hole 29a, and an upper mounting seat 31 is provided corresponding to each upper mounting shaft 5b, a rotatable upper connecting sleeve 32 is provided in the upper mounting seat 31, the upper mounting shaft 5b is threadedly connected to the inner wall of the corresponding upper connecting sleeve 32, and a flange 31a is provided on the outer periphery of the lower end of the upper mounting seat 31, and the flange 31a is fixedly connected to the upper turntable 7a through a number of fasteners. When the fixture 5 is installed, the lower end of the lower mounting shaft 5c is first connected to the lower connecting sleeve 28, and then the upper mounting shaft 5b passing through the edge hole 29a is connected to the upper connecting sleeve 32, and finally the flange 31a is fixedly connected to the upper turntable 7a through fasteners. Example 2

[0033] The difference from Example 1 is that the MEMS probe insulation process of this embodiment includes the following steps: (1) placing a jig 5 equipped with a plurality of MEMS probes 9 on a rotating bracket 7 in a magnetron sputtering coating device, wherein the rotating bracket 7 is located in a working chamber 10 inside the magnetron sputtering coating device, and closing a main door 4 of the magnetron sputtering coating device to seal the working chamber 10; (2. Evacuate the working chamber 10 until the pressure inside the chamber is 9.0E -4 Pa, heating the interior of the working chamber 10 to raise the temperature to 800° C.; (3) Ar gas is introduced into the working chamber 10 at a flow rate of 200 sccm for 13 minutes, and the magnetron sputtering coating device is powered on to excite the Ar gas into plasma; at this time, Ar gas is ionized to generate Ar + It will hit the target 16 under the interaction of the electric field and the magnetic field, sputtering out Si atoms of the target 16, and the cathode plate can attract Ar + Move toward the target 16 on the side door 6; set a certain time to allow only Ar gas to pass through so that Ar + Bombarding to remove possible contamination on the surface of the target material 16, so as to prevent the prepared SIN film from containing impurities; (4) While Ar gas is still introduced into the working chamber 10, N2 gas is continuously introduced into the working chamber 10 at a flow rate of 80 sccm for 12 min. At the same time, the rotating bracket 7 drives the fixture 5 to rotate at a speed of 50 r / min. The sputtered Si atoms react with the N atoms in the working chamber 10 to generate SIN, which is deposited on the surface of the MEMS probe 9 on the fixture 5 to form a thin film. (5) After the sputtering is completed, the MEMS probe 9 on the fixture 5 is cooled in a vacuum state in the working chamber 10. When the temperature is lower than 80° C., the vacuum is broken and the MEMS probe 9 mounted on the fixture 5 is taken out. Example 3

[0034] The difference from Example 1 is that the MEMS probe insulation process of this embodiment includes the following steps: (1) placing a jig 5 equipped with a plurality of MEMS probes 9 on a rotating bracket 7 in a magnetron sputtering coating device, wherein the rotating bracket 7 is located in a working chamber 10 inside the magnetron sputtering coating device, and closing a main door 4 of the magnetron sputtering coating device to seal the working chamber 10; (2. Evacuate the working chamber 10 until the pressure inside the chamber is 6.0E -4 Pa, heating the interior of the working chamber 10 to raise the temperature to 720° C.; (3) Ar gas is introduced into the working chamber 10 at a flow rate of 180 sccm for 5 minutes, and the magnetron sputtering coating device is powered on to excite the Ar gas into plasma; at this time, Ar gas is ionized to generate Ar + It will hit the target 16 under the interaction of the electric field and the magnetic field, sputtering out Si atoms of the target 16, and the cathode plate can attract Ar + Move toward the target 16 on the side door 6; set a certain time to allow only Ar gas to pass through so that Ar + Bombarding to remove possible contamination on the surface of the target material 16, so as to prevent the prepared SIN film from containing impurities; (4) While Ar gas is still introduced into the working chamber 10, N2 gas is continuously introduced into the working chamber 10 at a flow rate of 60 sccm for 15 min. At the same time, the rotating bracket 7 drives the fixture 5 to rotate at a speed of 35 r / min. The sputtered Si atoms react with the N atoms in the working chamber 10 to generate SIN, which is deposited on the surface of the MEMS probe 9 on the fixture 5 to form a thin film. (5) After the sputtering is completed, the MEMS probe 9 on the fixture 5 is cooled in a vacuum state in the working chamber 10. When the temperature is lower than 80° C., the vacuum is broken and the MEMS probe 9 mounted on the fixture 5 is taken out.

[0035] The MEMS probe 9 magnetron sputtering coating equipment of the present invention is equipped with a vacuum chamber, an ion pump, a high vacuum molecular pump, a rotating base, a refrigerator, and circulating cooling water; the sputtering target 16 uses 99.99% pure Si; the gas selects 99.99% pure Ar as the sputtering gas and 99.99% pure N2 as the reaction gas. When working, put the product into the vacuum chamber and evacuate the chamber until the pressure is 3.0E -4 -9.0E -4 Pa, heat the substrate to 650-800°C, introduce Ar gas with a flow rate of 150-200sccm, and turn on the power to excite the plasma. At this time, the ionized Ar+ will hit the target 16 under the interaction of the electric field and the magnetic field, sputtering out the Si atoms of the target 16. Set a certain time to only introduce Ar gas, so that it bombards and removes possible contamination on the surface of the target 16, to avoid impurities in the prepared SIN film. Then introduce N2 gas with a flow rate of 60-100sccm. At this time, the base on which the product is placed begins to rotate, and the sputtered Si atoms react with N atoms in the cavity to generate SIN, which is deposited on the surface of the product to form a thin film.

[0036] The advantages of the present invention are that the material used for the insulating film - SIN has very good insulation performance, and the resistivity can be as high as 10 14 Ω·cm, far exceeding many common insulating materials. The SIN film also has high hardness, high thermal stability, good chemical corrosion resistance, and can adapt to various working environments. In the semiconductor industry, its optical properties are mostly used in solar cells, and its insulating properties are not used as an insulating layer for test probes. In addition, the insulating film prepared by the selected magnetron sputtering method has better adhesion and higher density than the evaporation method, which to a certain extent makes up for the defect that the SIN film itself has weak adhesion. The present invention has high preparation efficiency and high cost performance. The prepared SIN film has excellent adhesion, stable film thickness, high component purity and good insulation. It has good performance when prepared on a variety of metal substrates.

[0037] The present invention is not limited to the above-mentioned embodiments. On the basis of the technical solution disclosed in the present invention, technicians in this field can make some substitutions and deformations to some technical features therein according to the disclosed technical content without creative labor, and these substitutions and deformations are all within the protection scope of the present invention.

Claims

1. A MEMS probe insulation process, characterized in that: The following steps are included (1) placing a fixture equipped with a plurality of MEMS probes on a rotating bracket in a magnetron sputtering coating device, the rotating bracket being located in a working chamber inside the magnetron sputtering coating device, and closing a main door of the magnetron sputtering coating device to seal the working chamber; (2. Evacuate the working chamber until the pressure inside the chamber is 3.0E -4 ~ 9.0E -4 Pa, heating the interior of the working chamber to raise the temperature to 650-800°C; (3) Ar gas is introduced into the working chamber at a flow rate of 150-200 sccm for 5-20 minutes, and the magnetron sputtering coating device is powered on to excite the Ar gas into plasma; (4) While Ar gas is still being introduced into the working chamber, N2 gas is continuously introduced into the working chamber at a flow rate of 60-100 sccm for 10-15 min. At the same time, the rotating bracket drives the fixture to rotate at a speed of 20-50 r / min. The sputtered Si atoms react with N atoms in the working chamber to generate SIN, which is deposited on the surface of the MEMS probe on the fixture to form a thin film. (5) After the sputtering is completed, the MEMS probe on the fixture is cooled down in a vacuum state in the working chamber. When the temperature is lower than 80°C, the vacuum is broken and the MEMS probe installed on the fixture is taken out.

2. A MEMS probe insulation process according to claim 1, characterized in that: The magnetron sputtering coating device is provided with an exhaust system, and the exhaust system is connected to the working chamber.

3. A MEMS probe insulation process according to claim 1 or 2, characterized in that: The working chamber is located in the shell of the magnetron sputtering coating device, an openable main door is provided on the front side of the shell corresponding to the working chamber, and an openable side door is respectively provided on the left and right sides of the shell corresponding to the working chamber. The rotating bracket in the working chamber includes a circular upper turntable and a lower turntable, a connecting rod is vertically provided between the centers of the upper turntable and the lower turntable, an upper rotating shaft is provided on the upper side of the upper turntable, and a lower rotating shaft is provided on the lower side of the lower turntable, the upper rotating shaft is rotatably connected to the shell and the upper rotating shaft passes through the shell and is transmission-connected to the reduction motor via a coupling, and the lower rotating shaft is rotatably connected to the shell.

4. A MEMS probe insulation process according to claim 3, characterized in that: A target material is provided on a surface of one side of the side door close to the working chamber, and the target material is Si with a purity of 99.99%. A cavity is provided inside the side door, and a cathode plate is provided in the cavity. The purity of Ar gas is 99.99%, and the purity of N2 is 99.99%.

5. A MEMS probe insulation process according to claim 3, characterized in that: The lower turntable is provided with an installation cavity inside, and a vertical center axis is rotatably provided inside the installation cavity. The center axis is coaxial with the connecting rod, and a large gear is sleeved on the center axis. A plurality of vertical pinion shafts are rotatably provided on the periphery of the large gear in the installation cavity, and the pinion shafts are evenly spaced and distributed around the periphery of the large gear. Pinion gears are sleeved on the pinion shafts, and each pinion gear is meshed with the large gear. A through groove is opened on the side surface of the lower turntable corresponding to any pinion gear, and an L-shaped support is provided at the bottom of the lower turntable. A driving motor is vertically provided on the support, and a driving gear is provided at the output end of the driving motor. The inner edge of the driving gear passes through the through groove and meshes with the corresponding pinion gear.

6. A MEMS probe insulation process according to claim 5, characterized in that: The lower turntable is provided with a plurality of lower mounting seats evenly distributed along the circumferential direction, each lower mounting seat is arranged corresponding to each pinion shaft one by one, a rotating hole is opened through the middle of the lower mounting seat, a plane bearing is provided at the bottom of the large-diameter hole of the rotating hole, the bottom of the lower connecting sleeve is fitted and embedded in the rotating groove and supported on the plane bearing, a coupling head passing through the small-diameter hole of the rotating hole is provided at the lower end of the lower connecting sleeve, and the coupling head is connected to the corresponding pinion shaft, and the upper turntable is provided with a plurality of upper mounting holes evenly distributed along the circumferential direction, and the upper mounting holes include edge holes and circular holes.

7. A MEMS probe insulation process according to claim 6, characterized in that: The fixture includes a rectangular main board, on which a mounting plate is fixed via fasteners, on which a plurality of MEMS probes are arranged, and on the upper and lower sides of the main board a vertical upper mounting shaft and a lower mounting shaft are respectively arranged, and an upper end of the upper mounting shaft and a lower end of the lower mounting shaft are both provided with external threads, and the lower mounting shaft is threadedly connected to the inner wall of the corresponding lower connecting sleeve, and the outer diameter of the upper mounting shaft is smaller than the width of the edge hole, and an upper mounting seat is provided corresponding to each upper mounting shaft, and a rotatable upper connecting sleeve is provided in the upper mounting seat, and the upper mounting shaft is threadedly connected to the inner wall of the corresponding upper connecting sleeve, and a flange is provided on the outer periphery of the lower end of the upper mounting seat, and the flange is fixedly connected to the upper turntable via a plurality of fasteners.

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