Regional low-defect-density compound semiconductor film and preparation method and application thereof

Abstract

The invention discloses a regional low-defect-density compound semiconductor film and a preparation method and application thereof, and the method comprises the steps: a compound semiconductor layer and a defect blocking layer are alternately grown on a substrate, and the defect blocking layer is provided with a groove-shaped structure, and is used for limiting defect propagation and guiding the transverse growth of the compound semiconductor layer; gradually expanding the low-defect area through multiple alternate growth until a target size is reached, and determining the target size according to device design information; and subsequently, stripping the regional low-defect-density compound semiconductor film by using the two-dimensional material layer, and transferring to a new substrate to repeat the growing and stripping steps so as to realize industrial batch production. The defect barrier layer with a groove-shaped structure is introduced to the surface of the thin film, and the two-dimensional material layer deposition and stripping technology is combined, so that defect propagation is effectively limited, the crystal quality of the thin film is improved, lossless separation and multiple transfer of the thin film are realized, and meanwhile, a regional defect reduction strategy is carried out by utilizing device design information; the preparation period of the whole film is obviously shortened.

Description

Technical Field

[0001] The present invention belongs to the technical field of compound semiconductors, and in particular to a regional low defect density compound semiconductor film and a preparation method and application thereof. Background Art

[0002] As human society gradually enters the era of new energy and artificial intelligence, human life and production methods are undergoing unprecedented profound changes. This change is giving rise to countless new concepts, new models, new technologies, new products, and new applications in the field of science and technology. Semiconductors are still the indispensable material basis. Among them, the development of compound semiconductors in recent years has attracted particular attention from the market. Wide-bandgap compound semiconductor devices such as silicon carbide and gallium nitride have gradually replaced traditional silicon devices due to their excellent performance in high current, high voltage, high power density, and high frequency. They are entering key markets such as power, radio frequency, and optoelectronics, providing customers with unprecedented new use value.

[0003] However, the manufacture of compound semiconductor materials is not easy, and some important materials still face many difficulties. For gallium nitride materials, it is either difficult to reduce costs or to improve quality. In other words, the large size and low defect density of gallium nitride materials cannot be achieved at the same time, which seriously hinders its wider and faster application. Summary of the invention

[0004] In view of the above technical problems, the purpose of the present invention is to provide a regional low defect density compound semiconductor film and its preparation method and application. By multiple processes of alternating the growth of compound semiconductor layers and defect barrier layers, the gradual expansion of the low defect area is achieved, thereby preparing a large area of ​​high-quality semiconductor film. At the same time, the device design information and the idea that the device only needs to regionally reduce the compound semiconductor defect density can be used, which significantly shortens the preparation cycle of the entire film.

[0005] The method of the present invention can effectively limit defect propagation, improve the crystal quality of the film, and achieve lossless separation and multiple transfers of the film by introducing a defect barrier layer with a groove structure on the surface of the film and combining the deposition and stripping technology of the two-dimensional material layer. It is suitable for mass industrial production and is widely used in the manufacture of high-frequency, high-power electronic devices and optoelectronic devices.

[0006] In order to achieve the above object, the technical solution adopted by the present invention is as follows:

[0007] According to one aspect of the present invention, there is provided a method for preparing a regional low defect density compound semiconductor film, comprising the following steps:

[0008] Alternately growing compound semiconductor layers and defect barrier layers on a substrate, wherein the defect barrier layers have a groove structure for limiting defect propagation and guiding lateral growth of the compound semiconductor layers;

[0009] The low defect area is gradually expanded through multiple alternating growths until a target size is reached, wherein the target size is determined based on device design information.

[0010] In some technical solutions, the specific steps of the multiple alternating growths are:

[0011] Forming a seed layer: In the initial growth stage, the lateral growth of the compound semiconductor layer is guided by the extremely narrow groove structure in the defect barrier layer, so that a low-defect region is formed on the side of the groove position higher than the defect barrier layer. The low-defect region serves as a seed layer for subsequent growth;

[0012] Gradually expand the layers: Based on the low-defect area of ​​the seed layer, subsequent alternating growth is carried out. During each growth, a defect barrier layer is set above the low-defect area and a groove structure is designed. The width of the first groove structure above the seed layer is equal to or smaller than the width of the groove structure of the seed layer, guiding the lateral growth of the compound semiconductor layer and gradually expanding the area of ​​the low-defect region until a regional low-defect density compound semiconductor film is formed.

[0013] In some technical solutions, during the alternating growth process of gradually expanding layers, the area of ​​the high defect density region covered by the defect barrier layer decreases successively, while the exposed area of ​​the low defect density region increases successively, thereby gradually expanding the area of ​​the low defect region.

[0014] In some technical solutions, the regional low defect density compound semiconductor film includes one or several uniformly distributed low defect regions matching the device design width. During the expansion of the low defect region, the groove structure set by the subsequent defect barrier layer is based on the low defect region of the seed layer, and the position of the groove is set in the middle of the equally divided area of ​​the low defect region.

[0015] In some technical solutions, at each alternating growth,

[0016] The increase in the low-defect region does not exceed the width of the first corresponding low-defect region above the seed layer; and / or,

[0017] The displacement of the groove structure in the defect barrier layer relative to the center position of the low-defect region of the previous compound semiconductor layer does not exceed half of the width of the first corresponding low-defect region on the seed layer.

[0018] In some technical solutions, the preparation method further includes a stripping process of a regional low defect density compound semiconductor film, comprising the following steps:

[0019] depositing a two-dimensional material layer on the surface of the final regional low defect density compound semiconductor layer;

[0020] Growing a mirror image layer corresponding to the original regional low defect density compound semiconductor layer on the two-dimensional material layer;

[0021] By physical or chemical exfoliation, a mirror-like regional low-defect density compound semiconductor film is non-destructively separated from a two-dimensional material layer.

[0022] In some technical solutions, the preparation method also includes a large-scale production process of a regional low defect density compound semiconductor film, comprising the following steps:

[0023] The peeled regional low defect density compound semiconductor film is transferred to a new substrate, and the aforementioned growth and peeling steps are repeated to achieve industrial mass production.

[0024] In some technical solutions, the preparation method also includes setting a buffer layer between the first compound semiconductor layer and the substrate, and the material of the buffer layer is selected from aluminum nitride (AlN), silicon nitride (Si3N4) or other materials whose lattice constant matches the compound semiconductor material.

[0025] In some technical solutions, the substrate is a sapphire substrate or a silicon carbide substrate or a QST substrate, the compound semiconductor layer is made of gallium nitride, gallium arsenide or indium phosphide, and the defect barrier layer is made of silicon oxide or silicon nitride; and / or,

[0026] The compound semiconductor layer and the defect barrier layer are prepared by metal organic chemical vapor deposition, and the groove structure is realized by photolithography.

[0027] In some technical solutions, the size of the regional low defect density compound semiconductor film is 6-18 inches.

[0028] According to another aspect of the present invention, there is further provided a regional low defect density compound semiconductor film, comprising a film obtained by the above preparation method.

[0029] According to another aspect of the present invention, an application of the above-mentioned regional low defect density compound semiconductor film is provided, and the film is suitable for various high-performance electronic devices, including radio frequency, optoelectronics, power, logic, storage, high temperature, high voltage, high current, high frequency, electricity, power conversion, energy storage, sensing, mechanical and intelligent electronic devices.

[0030] The present invention adopts the above technical solution to have at least the following beneficial effects:

[0031] 1. The present invention can effectively guide lateral growth and limit defect propagation by alternately growing compound semiconductor layers and defect barrier layers and introducing a groove structure in the defect barrier layer, thereby gradually expanding the low-defect area; this method can significantly reduce the defect density of the film and improve the film quality, and is suitable for the preparation of large-area, high-quality compound semiconductor films. At the same time, the device design information and the idea that the device only needs to reduce the compound semiconductor defect density regionally can be used, which significantly shortens the preparation cycle of the entire film;

[0032] 2. The present invention sequentially prepares the seed layer and the gradually expanded layer. The seed layer provides a low-defect area as the starting point for subsequent growth, effectively guiding the lateral growth of the subsequent film, while ensuring that the low-defect density area after each layer of alternating growth continues to expand, thereby improving the growth control and quality stability of the film;

[0033] 3. The present invention can accurately control the distribution of high-defect areas and low-defect areas during the film growth process by controlling the coverage area of ​​the defect barrier layer and the expansion width of the low-defect area, ensuring that the area of ​​the low-defect area is uniformly expanded during each alternating growth, thereby improving the overall uniformity of the film and device performance;

[0034] 4. The present invention further optimizes the matching degree between the groove and the low-defect area by setting a groove structure in the middle of the equally divided area of ​​the substrate and controlling the offset relative to the low-defect area, thereby ensuring the stability of lateral growth and the maximum utilization of the low-defect area, thereby improving the growth efficiency and quality of the film;

[0035] 5. The present invention deposits a two-dimensional material layer on the final film layer and realizes non-destructive peeling, thereby ensuring that the low defect density film can be completely peeled off from the substrate, and maintains good surface quality and integrity after peeling; this method greatly improves the production efficiency of the film and provides support for subsequent transfer and mass production;

[0036] 6. The present invention can effectively reduce the stress caused by lattice mismatch and thermal expansion coefficient difference, reduce the defect density in film growth, and improve the crystal quality of the film by setting a buffer layer between the compound semiconductor film layer and the substrate; this technology improves the interface quality between the film and the substrate and ensures the stability of film growth;

[0037] 7. The regional low defect density compound semiconductor film prepared by the present invention is suitable for a wide range of high-performance electronic devices. Due to its high electron mobility and low defect density, the film can significantly improve the performance of various electronic devices such as radio frequency, optoelectronics, power and logic, and is particularly suitable for stable operation under high frequency, high power and high temperature conditions. For example, when gallium nitride film is used in radio frequency electronic devices, it can effectively improve signal amplification efficiency and reduce losses; in optoelectronic applications, it can improve the luminous efficiency of LEDs and lasers; in power electronic devices such as power conversion modules of electric vehicles, the film helps to improve current transmission and heat dissipation, meeting the requirements of modern electronic equipment for high efficiency, reliability and low power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram of a method for preparing a regional low defect density gallium nitride film according to an embodiment of the present invention;

[0039] Figure 2 for Figure 1 Schematic diagram of the top view of the middle a layer;

[0040] Figure 3 for Figure 1 Schematic diagram of top view of middle b layer;

[0041] Figure 4 for Figure 1 Schematic diagram of top view of the middle c layer;

[0042] Figure 5 for Figure 1 Schematic diagram of the top view of the middle d0 layer;

[0043] Figure 6 for Figure 1 Schematic diagram of the top view of the middle e0 layer;

[0044] Figure 7 for Figure 1 Schematic diagram of top view of the middle d1 layer;

[0045] Figure 8 for Figure 1 Schematic diagram of the top view of the middle e1 layer;

[0046] Fig. 9 for Figure 1 Schematic top view of the middle d2 layer;

[0047] Fig.10 for Figure 1 Schematic top view of the middle e2 layer;

[0048] Fig.11 for Figure 1 A top view of the middle d3 layer;

[0049] Fig.12 for Figure 1 A top view of the middle e3 layer;

[0050] Fig.13 for Figure 1 Schematic diagram of the top view of the middle d4 layer;

[0051] Fig.14 for Figure 1 A top view of the middle e4 layer;

[0052] Fig.15 for Figure 1 Schematic diagram of the top view of the middle d5 layer;

[0053] Fig.16 for Figure 1 A top view of the middle e5 layer;

[0054] Fig.17 for Figure 1 A top view of the middle x layer;

[0055] Fig.18 for Figure 1 Schematic diagram of the top view of the middle y layer;

[0056] Fig.19 for Figure 1 Schematic top view of the x-separable layer. DETAILED DESCRIPTION

[0057] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings and other implementation methods can be obtained based on these drawings without creative work.

[0058] In order to simplify the drawings, only the parts related to the invention are schematically shown in each figure, and they do not represent the actual structure of the product. In addition, in order to simplify the drawings and facilitate understanding, in some figures, only one of the parts with the same structure or function is schematically drawn or marked. In this article, "one" not only means "only one", but also means "more than one".

[0059] It should be further understood that the term “and / or” used in the specification and appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0060] The present invention provides a method for preparing a regional low defect density compound semiconductor film, comprising the steps of:

[0061] Alternately growing compound semiconductor layers and defect barrier layers on a substrate, wherein the defect barrier layers have a groove structure for limiting defect propagation and guiding lateral growth of the compound semiconductor layers;

[0062] The low defect area is gradually expanded through multiple alternating growths until a target size is reached, wherein the target size is determined based on device design information.

[0063] The present application can effectively guide lateral growth and limit defect propagation by alternately growing compound semiconductor layers and defect barrier layers and introducing a groove structure in the defect barrier layer, thereby gradually expanding the low-defect area; this method can significantly reduce the defect density of the film and improve the film quality, and is suitable for the preparation of large-area, high-quality compound semiconductor films. At the same time, the device design information and the idea that the device only needs to regionally reduce the defect density of the compound semiconductor can be used, which significantly shortens the entire film preparation cycle.

[0064] In a specific embodiment, multiple alternating growths include two stages, the first stage is used to form a seed level, specifically: in the initial growth stage, the lateral growth of the compound semiconductor layer is guided by a groove structure with an extremely small width in the defect barrier layer, so that a low-defect region is formed on the side of the defect barrier layer at the groove position, and the low-defect region serves as a seed layer for subsequent growth; the second stage is used to gradually expand the level, specifically: based on the low-defect region of the seed layer, subsequent alternating growth is carried out, each time during growth, a defect barrier layer is set above the low-defect region and a groove structure is designed, the width of the first groove structure above the seed layer is equal to or less than the width of the groove structure of the seed layer, guiding the lateral growth of the compound semiconductor layer, and gradually expanding the area of ​​the low-defect region until a regional low-defect density compound semiconductor film is formed.

[0065] In the above embodiment, the area of ​​the low defect region is gradually expanded, and the area of ​​the high defect density region covered by the defect barrier layer is gradually reduced, while the exposed area of ​​the low defect density region is gradually increased. Preferably, the size of the groove structure opened by the defect barrier layer is equal to or slightly smaller than the width of the corresponding low defect region of the previous compound semiconductor layer, so that the previous low defect region can be used to the maximum extent for the lateral expansion of the compound semiconductor layer and the quality of the film corresponding to the low defect region of the next compound semiconductor layer can be ensured. More preferably, during each alternating growth, the expansion of the low defect region is controlled not to exceed the width of the first corresponding low defect region on the seed layer.

[0066] In this embodiment, by controlling the size of the groove structure and the coverage area of ​​the defect barrier layer and the expansion width of the low-defect area, the distribution of defect areas and low-defect areas during the film growth process can be accurately controlled to ensure that the area of ​​the low-defect area is uniformly expanded during each alternating growth, thereby improving the overall uniformity of the film and the device performance.

[0067] In the above embodiment, the regional low defect density compound semiconductor film includes one or more uniformly distributed low defect regions matching the design width of the device. During the expansion of the low defect region, the groove structure set by the subsequent defect barrier layer is based on the low defect region of the seed layer, and the position of the groove structure is set in the middle of the width of the low defect region, so as to maximize the use of its effective area. Preferably, the groove structure in the defect barrier layer is controlled to be offset from the center position of the low defect region of the previous compound semiconductor layer by no more than half of the width of the first corresponding low defect region on the seed layer, thereby optimizing the matching degree between the groove structure and the low defect region, ensuring the stability of lateral growth, and thus improving the growth efficiency and quality of the film.

[0068] In a preferred embodiment, the present invention also provides a method for stripping a regional low defect density compound semiconductor film, which is to achieve non-destructive stripping through a two-dimensional material. The specific process steps include:

[0069] depositing a two-dimensional material layer on the surface of the final regional low defect density compound semiconductor layer;

[0070] Growing a mirror image layer corresponding to the original regional low defect density compound semiconductor layer on the two-dimensional material layer;

[0071] By physical or chemical exfoliation, a mirror-like regional low-defect density compound semiconductor film is non-destructively separated from a two-dimensional material layer.

[0072] Among them, the two-dimensional material layer is obtained by lateral growth of molybdenum sulfide (MoS2), graphene or other two-dimensional materials with exfoliation characteristics; the above-mentioned mirror layer is a mirror structure of the regional low defect density compound semiconductor film, ensuring that its crystal quality is consistent with the previous layer.

[0073] In this embodiment, by depositing a two-dimensional material layer on the final thin film layer and achieving non-destructive peeling, it is ensured that the low defect density film can be completely peeled off from the substrate, and maintains good surface quality and integrity after peeling; this method greatly improves the production efficiency of the film and provides support for subsequent transfer and mass production.

[0074] In another preferred embodiment, the present invention also provides a method for large-scale production of regional low defect density compound semiconductor films, by transferring the regional low defect density compound semiconductor films peeled off in the above embodiment to a new substrate, and repeating the aforementioned growth and peeling steps, thereby achieving industrial mass production.

[0075] In this embodiment, the two-dimensional material layer is not only used for the stripping of the complete regional low defect density compound semiconductor film, but also for the stripping of the incomplete regional low defect density compound semiconductor film during the alternating growth process. In the first case, the stripped complete regional low defect density compound semiconductor film is transferred to a new substrate, and the process of growing the two-dimensional material layer, growing the mirror image layer of the regional low defect density compound semiconductor film, and non-destructive separation using the separation characteristics of the two-dimensional material is repeated, thereby achieving large-scale production of regional low defect density compound semiconductor films. In the second case, usually due to the overall thickness of the film layer or the excessive warping, the incomplete regional low defect density compound semiconductor layer can be separated before the complete regional low defect density compound semiconductor layer is obtained, and the separated incomplete regional low defect density compound semiconductor film is transferred to a new substrate. The corresponding regional low defect density compound semiconductor layer size is used as the starting point again, and the regional low defect density compound semiconductor layer size expansion mechanism of the present invention is repeatedly used until the regional low defect density compound semiconductor film is completely formed. Then, the complete regional low defect density compound semiconductor film is peeled off according to the method described in the present invention and transferred to a new substrate to start the subsequent large-scale production of regional low defect density compound semiconductor films.

[0076] In another preferred embodiment, the preparation method of the present invention also includes setting a buffer layer between the first compound semiconductor layer and the substrate, and the material of the buffer layer is selected from aluminum nitride (AlN), silicon nitride (Si3N4) or other materials whose lattice constant matches the compound semiconductor material.

[0077] In this embodiment, by setting a buffer layer between the compound semiconductor thin film layer and the substrate, the stress caused by lattice mismatch and thermal expansion coefficient difference can be effectively reduced, the defect density in thin film growth can be reduced, and the crystal quality of the thin film can be improved; this technology improves the interface quality between the thin film and the substrate, and ensures the stability of thin film growth.

[0078] In the process implementation results of the above-mentioned embodiments, regional low defect density compound semiconductor thin films of different sizes can be manufactured, such as 6 inches, 8 inches, 12 inches, and even 18 inches, and the size depends on the size of the substrate. Therefore, the present invention can greatly improve the production efficiency of regional low defect density compound semiconductor thin film materials and significantly reduce their costs.

[0079] The present application can realize the rapid preparation of low defect density compound semiconductor films. Here, "rapid preparation" means that the regional low defect density compound semiconductor films based on device design information produced by the manufacturing process of the present invention do not need to meet the low defect density requirements as a whole in the area where the device is used, but only need to meet the low defect density requirements in the area where the device is designed. Therefore, compared with the overall film meeting the low defect density requirements, the process steps will be greatly reduced, so that large-scale production can be "quickly" entered.

[0080] In another embodiment, the regional low defect density compound semiconductor film prepared in this case is suitable for a wide range of high-performance electronic devices, including radio frequency, optoelectronics, power, logic, storage, high temperature, high voltage, high current, high frequency, electricity, power conversion, energy storage, sensing, mechanical and intelligent electronic devices.

[0081] In order to have a clearer understanding of the preparation process and technical effects of the present invention, the following specific examples are given, taking the preparation of regional low defect density gallium nitride film as an example.

[0082] like Figure 1 , shows the preparation method of regional low defect density gallium nitride film, including the determination of device design information, substrate preparation, growth of buffer layer, formation of seed layer, deposition of defect barrier layer and formation of groove structure, subsequent alternating growth of gallium nitride layer, deposition and stripping of two-dimensional material layer, and subsequent treatment after stripping. Among them,

[0083] The above device design information can be obtained through the device design document, which mainly includes the physical shape and size of the device. According to the device shape, it is necessary to determine the "narrowest" size of the device on the gallium nitride film in the future. This narrowest size will be the minimum reference width of the low defect density gallium nitride area on the film. The actual width can be appropriately increased according to the subsequent cutting size and accuracy on the wafer, such as an increase of 5% to 10%, to ensure that the cutting width does not damage the device area.

[0084] Among them, combined Figure 2 As shown, referring to layer a, the preparation of the substrate material mainly uses materials with similar lattice constants and thermal expansion coefficients to those of the buffer layer material, which are obtained through processes such as crystal pulling, cutting, and polishing, or finished products that meet the requirements can be purchased. The substrate material is preferably a sapphire substrate, a silicon carbide substrate, or a QST substrate. The substrate is cleaned by first ultrasonically cleaning it in ethanol and acetone for 5 minutes to remove organic pollutants on the surface, then rinsing it with deionized water and blowing it with nitrogen. The size of the substrate is selected according to production requirements, and usually 6 inches and above can be selected.

[0085] Combination Figure 3As shown, referring to layer b, an aluminum nitride (AlN) buffer layer is deposited on the cleaned substrate by metal organic chemical vapor deposition. The preparation of the buffer layer also needs to pay attention to the lattice constant and thermal expansion coefficient of the buffer layer material and the gallium nitride material in material selection. These two items also need to be as close as possible. This layer is mainly obtained by crystal growth.

[0086] Combination Figure 4-6 As shown, the formation of the seed layer includes the preparation of the c layer, the d0 layer, and the e0 layer. Specifically, the c layer is the first gallium nitride layer, which can be prepared on the aluminum nitride buffer layer by MOCVD equipment; the d0 layer is a defect barrier layer, which can be made of silicon oxide or silicon nitride material. The defect barrier layer is prepared on the gallium nitride layer by MOCVD equipment, and its gallium nitride defect barrier part and low defect density gallium nitride growth part are realized by photolithography technology. The size of the manufactured groove structure is submicron, and the ideal size is 28nm wide; the e0 layer is a gallium nitride layer grown from the silicon oxide or silicon nitride groove structure on the d0 layer. The defect density of the groove structure part corresponding to this layer is similar to that of the first layer, and the defect density of the adjacent part of the groove structure is low, and the adjacent part is 10um wide.

[0087] Combination Figure 7 As shown, referring to the d1 layer, the d1 layer has a silicon oxide or silicon nitride defect barrier layer with a groove structure on the e0 layer. The groove structure of this layer is also obtained by photolithography. Its position is laterally deviated from the groove structure of the d0 layer compared to the d0 layer, so that the groove structure of the d1 layer is exactly located in the low defect density gallium nitride layer of the corresponding equally divided area, in preparation for the subsequent expansion of the low defect density gallium nitride layer. It is generally recommended that the groove of the d1 layer is located in the middle of the corresponding equally divided area of ​​the substrate to maximize the use of its effective area. The groove size of this layer is similar to that of the d0 layer.

[0088] Combination Figure 8-16 As shown, the alternating growth process of subsequent GaN layers:

[0089] Among them, the e1 layer is a gallium nitride layer grown in the silicon oxide or silicon nitride groove structure on the d1 layer. The defect density of the groove structure part and its adjacent part corresponding to this layer is low, and the size of the low defect density layer in the corresponding equally divided area is 20um wide.

[0090] The d2 layer is a silicon oxide or silicon nitride barrier layer covering the e1 layer. The high defect density gallium nitride barrier part and the low defect density gallium nitride growth part are obtained by photolithography. The area of ​​the high defect density gallium nitride barrier part covered by this layer is smaller than that of the d1 layer. At the same time, the area of ​​the low defect density gallium nitride layer in the corresponding equally divided area exposed by this layer is larger than that of the d1 layer, which is about 20um wide.

[0091] The e2 layer is a gallium nitride layer grown on the d2 layer. The defect density in the middle of the equally divided area of ​​this layer is relatively low, and the area of ​​the low defect density region is larger than that of the gallium nitride layer in the previous equally divided area, which is about 40um wide.

[0092] The d3 layer is a silicon oxide or silicon nitride barrier layer covering the e2 layer. The high defect density gallium nitride barrier part and the low defect density gallium nitride growth part are obtained by photolithography. The area of ​​the high defect density gallium nitride barrier part covered by this layer is smaller than that of the d2 layer. At the same time, the area of ​​the low defect density gallium nitride layer in the equally divided area exposed by this layer is larger than that of the d2 layer, which is about 40um wide.

[0093] The e3 layer is a GaN layer grown on the d3 layer. The defect density in the middle of the divided area of ​​this layer is low, and the area of ​​the low defect density area is larger than that of the GaN layer in the previous divided area, which is about 60um wide. ;

[0094] The d4 layer is a silicon oxide or silicon nitride barrier layer covering the e3 layer. The high defect density gallium nitride barrier part and the low defect density gallium nitride growth part are obtained by photolithography. The area of ​​the high defect density gallium nitride barrier part covered by this layer is smaller than that of the d3 layer. At the same time, the area of ​​the low defect density gallium nitride layer exposed in the equally divided area of ​​this layer is larger than that of the d3 layer, and is about 60um wide. ;

[0095] The e4 layer is a gallium nitride layer grown on the d4 layer. The defect density in the middle of the equally divided area of ​​this layer is relatively low, and the area of ​​the low defect density region is larger than that of the gallium nitride layer in the previous equally divided area, which is about 80um wide.

[0096] The d5 layer is a silicon oxide or silicon nitride barrier layer covering the e4 layer. The high defect density gallium nitride barrier part and the low defect density gallium nitride growth part are obtained by photolithography. The area of ​​the high defect density gallium nitride barrier part covered by this layer is smaller than that of the d4 layer. At the same time, the area of ​​the low defect density gallium nitride layer exposed in the equally divided area of ​​this layer is larger than that of the d4 layer, and is about 80um wide. ;

[0097] The e5 layer is a gallium nitride layer grown on the 1 layer. The defect density in the middle of the equally divided area of ​​this layer is relatively low, and the area of ​​the low defect density region is larger than that of the gallium nitride layer in the previous equally divided area, which is about 100um wide.

[0098] Combination Figure 17-19 As shown, it involves the deposition and exfoliation of two-dimensional material layers.

[0099] Among them, the x layer is a regionally complete low defect density GaN layer.

[0100] The y layer is a molybdenum sulfide or other two-dimensional material layer on the x layer, which is obtained by lateral growth of the two-dimensional material.

[0101] The x-separable layer is a mirror image of the regional low defect density GaN layer in the x layer grown on the y layer. It is basically the same as the x-layer GaN layer, but can be separated from the surface of the two-dimensional material in the y layer without damage.

[0102] At this point, the separated regional low defect density GaN film can be transplanted onto a new substrate, such as a silicon carbide or sapphire substrate or a QST substrate, to start subsequent large-scale production of regional low defect density GaN films.

[0103] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the attached claims.

Claims

1. A method for preparing a regional low defect density compound semiconductor film, characterized in that: The following steps are involved: Alternately growing compound semiconductor layers and defect barrier layers on a substrate, wherein the defect barrier layers have a groove structure for limiting defect propagation and guiding lateral growth of the compound semiconductor layers; The low defect area is gradually expanded through multiple alternating growths until a target size is reached, wherein the target size is determined based on device design information.

2. The preparation method according to claim 1, characterized in that: The specific steps of the multiple alternating growths are: Forming a seed layer: In the initial growth stage, the lateral growth of the compound semiconductor layer is guided by the extremely narrow groove structure in the defect barrier layer, so that a low-defect region is formed on the side of the groove position higher than the defect barrier layer. The low-defect region serves as a seed layer for subsequent growth; Gradually expand the layers: Based on the low-defect area of ​​the seed layer, subsequent alternating growth is carried out. During each growth, a defect barrier layer is set above the low-defect area and a groove structure is designed. The width of the first groove structure above the seed layer is equal to or less than the width of the groove structure of the seed layer, guiding the lateral growth of the compound semiconductor layer and gradually expanding the area of ​​the low-defect region until a regional low-defect density compound semiconductor film is formed.

3. The preparation method according to claim 2, characterized in that: In the alternating growth process of gradually expanding layers, the area of ​​the high defect density region covered by the defect barrier layer decreases successively, while the exposed area of ​​the low defect density region increases successively, thereby gradually expanding the area of ​​the low defect region.

4. The preparation method according to claim 2, characterized in that: The regional low defect density compound semiconductor film includes one or several uniformly distributed low defect regions matching the device design width. During the expansion of the low defect region, the groove structure set by the subsequent defect barrier layer is based on the low defect region of the seed layer, and the position of the groove structure is set in the middle of the equally divided area of ​​the low defect region.

5. The preparation method according to any one of claims 2 to 4, characterized in that: At each alternating growth, The increase in the low-defect region does not exceed the width of the first corresponding low-defect region above the seed layer; and / or, The displacement of the groove structure in the defect barrier layer relative to the center position of the low-defect region of the previous compound semiconductor layer does not exceed half of the width of the first corresponding low-defect region on the seed layer.

6. The preparation method according to claim 1, characterized in that: The preparation method further includes a stripping process of a regional low defect density compound semiconductor film, comprising the following steps: depositing a two-dimensional material layer on the surface of the final regional low defect density compound semiconductor layer; Growing a mirror image layer corresponding to the original regional low defect density compound semiconductor layer on the two-dimensional material layer; By physical or chemical exfoliation, a mirror-like regional low-defect density compound semiconductor film is non-destructively separated from a two-dimensional material layer.

7. The preparation method according to claim 6, characterized in that: The preparation method also includes a large-scale production process of a regional low defect density compound semiconductor film, comprising the following steps: The peeled regional low defect density compound semiconductor film is transferred to a new substrate, and the aforementioned growth and peeling steps are repeated to achieve industrial mass production.

8. The preparation method according to claim 1, characterized in that: The preparation method further comprises providing a buffer layer between the first compound semiconductor layer and the substrate, wherein the material of the buffer layer is selected from aluminum nitride, silicon nitride or other materials whose lattice constant matches that of the compound semiconductor material.

9. The preparation method according to claim 1, characterized in that: The substrate is a sapphire substrate, a silicon carbide substrate or a QST substrate, the compound semiconductor layer is made of gallium nitride, gallium arsenide or indium phosphide, and the defect barrier layer is made of silicon oxide or silicon nitride; and / or, The compound semiconductor layer and the defect barrier layer are prepared by metal organic chemical vapor deposition, and the groove structure is realized by photolithography.

10. The preparation method according to claim 1, characterized in that: The size of the regional low defect density compound semiconductor film is 6-18 inches.

11. A regional low defect density compound semiconductor film, characterized in that: The invention comprises a film obtained by the preparation method according to any one of claims 1 to 10.

12. The use of the regional low defect density compound semiconductor film according to claim 11, characterized in that: The film is suitable for various types of high-performance electronic devices, including radio frequency, optoelectronics, power, logic, storage, high temperature, high voltage, high current, high frequency, electricity, power conversion, energy storage, sensing, mechanical and intelligent electronic devices.

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