Vapor deposition device

Abstract

The embodiment of the specification provides a vapor deposition device, comprising: a deposition main body, the deposition main body comprising a first cavity, a second cavity and a first side wall; the first cavity is arranged in the second cavity, and the first cavity is configured to contain a to-be-deposited object; a first cavity is defined by the first side wall, a plurality of through holes are formed in the first side wall, and the first cavity and the second cavity are communicated through the through holes; the first input pipe is communicated with the first cavity; the second input pipe is communicated with the second cavity; and the output pipe is communicated with the first cavity.

Description

Technical Field

[0001] The present invention relates to the technical field of inorganic synthetic chemistry, and in particular to a vapor deposition device. Background Art

[0002] Chemical vapor deposition technology refers to the technology of preparing inorganic materials by using one or more gaseous compounds or single substances containing thin film elements to undergo chemical reactions on the surface of a substrate to form a thin film.

[0003] When chemical vapor deposition is performed on complex surfaces (large areas, special shapes), it is usually difficult for the commonly used devices in chemical vapor deposition methods to simultaneously achieve high deposition efficiency, high uniformity and high utilization rate, and it is difficult to adapt to deposition on complex surfaces.

[0004] Therefore, it is desirable to provide a vapor deposition apparatus that can achieve thin film deposition on complex surfaces while taking into account high deposition efficiency, high uniformity, and high utilization rate. Summary of the invention

[0005] One or more embodiments of the present specification provide a vapor deposition device, comprising: a deposition body, the deposition body comprising a first cavity, a second cavity and a first side wall; the first cavity is arranged in the second cavity, the first cavity is configured to accommodate an object to be deposited; the first side wall surrounds the first cavity, the first side wall is provided with a plurality of through holes, the plurality of through holes connect the first cavity and the second cavity; the first input pipe, the first input pipe is connected to the first cavity; the second input pipe, the second input pipe is connected to the second cavity; the output pipe, the output pipe is connected to the first cavity.

[0006] In some embodiments, the vapor deposition device further comprises a cover body detachably connected to the deposition body, a gas channel and the output pipe are provided in the cover body, and the output pipe is connected to the first cavity through the gas channel.

[0007] In some embodiments, the vapor deposition device also includes a second side wall, a first bottom wall and a second bottom wall, the first bottom wall and the first side wall form the first cavity, the second side wall surrounds the first side wall, the second bottom wall is located on the bottom side of the first bottom wall, and the first side wall, the second side wall and the second bottom wall form a ring-shaped second cavity.

[0008] In some embodiments, the plurality of through holes are arranged in an array, the direction of the columns in the array is parallel to the axial direction of the annular second cavity, and the rows in the array extend along the circumference of the annular second cavity.

[0009] In some embodiments, the first input pipe and the second input pipe are both located at the bottom end along the axial direction of the annular second cavity, and the output pipe is located at the top end along the axial direction of the annular second cavity; the vapor deposition device also includes a support structure, which is arranged in the first cavity; the bottommost row of the plurality of through holes is flush with the top surface of the support structure.

[0010] In some embodiments, in each column of the plurality of through holes, the through holes closer to the bottom side have smaller opening areas.

[0011] In some embodiments, the first input tube is located inside the second output tube.

[0012] In some embodiments, the vapor deposition device further includes a first heating component, the first heating component includes a side portion and a bottom portion; the side portion is disposed around the outside of the second side wall; and the bottom is located on the bottom side of the second bottom wall.

[0013] In some embodiments, the vapor deposition apparatus further includes a second heating element disposed in the first chamber.

[0014] In some embodiments, the material of the first bottom wall and the first side wall that enclose the first cavity is at least one of graphite, high thermal conductivity ceramics and metal; the material of the second side wall and the second bottom wall that enclose the second cavity is at least one of graphite, high thermal conductivity ceramics and metal. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] This specification will be further described in the form of exemplary embodiments, which will be described in detail by the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:

[0016] Figure 1 is an exemplary structural diagram of a vapor deposition device according to some embodiments of this specification;

[0017] Figure 2 is based on Figure 1 AA cross-sectional view of the vapor deposition apparatus shown;

[0018] Figure 3 is another exemplary cross-sectional view of a first side wall and a second side wall according to some embodiments of the present specification;

[0019] Figure 4 is an exemplary structural diagram of a through hole according to some embodiments of this specification;

[0020] Figure 5 is another exemplary structural diagram of a through hole according to some embodiments of this specification;

[0021] Figure 6 is another exemplary structural diagram of a through hole according to some embodiments of the present specification. DETAILED DESCRIPTION

[0022] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of this specification. For ordinary technicians in this field, this specification can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0023] It should be understood that the "system", "device", "unit" and / or "module" used herein are a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0024] As shown in this specification and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0025] Chemical vapor deposition technology is a technology that uses gaseous substances to produce chemical reactions and transmission reactions on solids and produce solid deposits. For the device used in the chemical vapor deposition method, in some embodiments, a shower-like structure device is used, that is, gas is input through multiple holes similar to a shower, and the gas forms a thin film on the surface of the substrate. The device is usually difficult to ensure high utilization of raw materials while ensuring high deposition efficiency and high uniformity, and it is difficult to adapt to the deposition of complex surfaces. In some embodiments, a flow channel structure device is used, that is, the substrate is placed in a gas flow channel for vapor deposition. The device can easily achieve high utilization of raw materials and deposition on complex surfaces, but it is difficult to achieve high uniformity. When using the above-mentioned device, multiple raw material gases are first mixed and reacted to generate deposition gas, which is then transported to the substrate surface for vapor deposition. In this way, the film thickness generated by the part of the substrate surface to be deposited that first contacts the deposition gas is relatively thick, and the film thickness generated by the part that contacts the deposition gas later is relatively thin, so the film generated on the substrate surface is uneven.

[0026] Based on this, some embodiments of the present specification provide a vapor deposition device, including a deposition body, a first input pipe, a second input pipe and an output pipe. Different vapor raw materials required for chemical vapor deposition can be separated through the two input pipes, and after being preheated and activated separately, they are evenly mixed and reacted on the surface of the deposition workpiece through the through holes on the side wall, which can simultaneously take into account high deposition efficiency, high uniformity and high utilization rate.

[0027] Figure 1 is an exemplary structural diagram of a vapor deposition device according to some embodiments of the present specification. Figure 2 is based on Figure 1 AA cross-sectional view of the vapor deposition device shown.

[0028] In some embodiments, Figure 1 and Figure 2 As shown, the vapor deposition device includes a deposition body, a first input pipe 30, a second input pipe 40 and an output pipe 50, and the deposition body includes a first cavity 10, a second cavity 20 and a first side wall 110; the first cavity 10 is arranged in the second cavity 20, and the first cavity 10 is constructed to accommodate an object to be deposited 60; the first side wall 110 surrounds the first cavity 10, and the first side wall 110 is provided with a plurality of through holes 111, and the plurality of through holes 111 connect the first cavity 10 and the second cavity 20; the first input pipe 30 is connected to the first cavity 10; the second input pipe 40 is connected to the second cavity 20; and the output pipe 50 is connected to the first cavity 10.

[0029] The deposition body refers to the main structure of the vapor deposition device, which is used to realize chemical vapor deposition of the object to be deposited. The object to be deposited may include a substrate, and a solid substance can be formed and deposited on the substrate through a vapor phase chemical reaction between gaseous initial compounds.

[0030] In some embodiments, the deposition body may include a first cavity 10 , a second cavity 20 , and a first sidewall 110 .

[0031] The first cavity 10 is a space filled with gas and for vapor deposition. The first cavity 10 can be in a variety of shapes, such as cylindrical, cubic, polygonal, etc. In some embodiments, the object to be deposited 60 is disposed in the first cavity 10. The shape of the first cavity 10 can be adapted to the object to be deposited 60. For example, if the object to be deposited 60 is a cylinder, and the solid material formed by the gas-phase chemical reaction needs to be deposited on the outer surface of the cylinder, then the first cavity 10 is cylindrical, and the curvature of the inner surface of the first cavity 10 is the same as the curvature of the outer surface of the main body, so as to facilitate uniform deposition of the solid material; for another example, if the object to be deposited 60 is flat, and the solid material formed by the gas-phase chemical reaction needs to be deposited on a flat plane, then the first cavity 10 is cubic or polygonal, and the plane of the object to be deposited 60 is close to a plane in the inner surface of the first cavity 10, and the two planes are parallel to each other, so as to facilitate uniform deposition of the solid material. The object 60 to be deposited may also be in other irregular shapes, and the inner surface of the first cavity 10 may be set to an irregular shape matching the object 60 to improve deposition uniformity.

[0032] The second cavity 20 is a space filled with gaseous raw materials. The second cavity 20 can be in various shapes, such as cylindrical, cubic, polyhedral, etc. In some embodiments, the first cavity 10 is disposed in the second cavity 20. There can be a uniform or non-uniform gap between the first cavity 10 and the second cavity 20. The shape of the second cavity 20 can be the same as or different from that of the first cavity 10.

[0033] In some embodiments, the first cavity 10 is surrounded by a first sidewall 110. The first sidewall 110 may be located between the first cavity 10 and the second cavity 20, serving as the outer wall of the first cavity 10 and the inner wall of the second cavity 20. In some embodiments, the first sidewall 110 is provided with a plurality of through holes 111, and the first cavity 10 and the second cavity 20 may be interconnected through the plurality of through holes 111, so that two or more gases in the two cavities can be mixed to generate a gas phase chemical reaction to form a solid substance deposited on the object to be deposited 60.

[0034] The first input pipe 30 is a pipe for transporting gaseous raw materials. In some embodiments, one end of the first input pipe 30 is connected to the first cavity 10, and the other end is connected to the gaseous raw material input source. In some embodiments, the first input pipe 30 is disposed at the bottom of the first cavity 10.

[0035] The second input pipe 40 is a pipe for transporting another gaseous raw material. In some embodiments, the second input pipe 40 is connected to the second cavity 20, and the other end is connected to another gaseous raw material input source. In some embodiments, the second input pipe 40 is disposed at the bottom of the second cavity 20.

[0036] It should be noted that the gaseous raw materials transported by the first input pipe 30 and the second input pipe 40 respectively may both be one or more reactants participating in the chemical reaction, or one of them may be one or more reactants and the other may be a functional gas such as a carrier gas.

[0037] The first input pipe 30 and the second input pipe 40 can be made of at least one of graphite, high thermal conductivity ceramics and metals, have excellent thermal conductivity and high temperature resistance, good chemical stability and mechanical strength, can resist corrosion and pressure changes, transport raw materials stably, and have a long service life.

[0038] The output pipe 50 is a pipe for outputting gas. In some embodiments, the output pipe 50 is connected to the first cavity 10. In some embodiments, the output pipe 50 is disposed at the top of the vapor deposition device. It is understandable that after the gaseous raw materials input by the two input pipes are mixed and undergo a gas-phase chemical reaction, other gaseous compounds may be generated and need to be discharged from the vapor deposition device; at the same time, since the first input pipe 30 and the second input pipe 40 continue to input gaseous raw materials, some gaseous raw materials may not react completely and will also be discharged from the vapor deposition device through the output pipe 50.

[0039] By setting a first cavity that matches the object to be deposited, it is possible to adapt to the deposition on complex surfaces and improve the uniformity of deposition; by setting a first input pipe and a second input pipe, the gas phase required for chemical vapor deposition can be separated, and the two gaseous raw materials are respectively transported by the first input pipe and the second input pipe at the bottom of the vapor deposition device; by setting a plurality of through holes, the gaseous raw materials input by the two input pipes are mixed at the through holes to produce a gas-phase chemical reaction, which delays the reaction time compared to a direct mixing reaction, so that the gaseous raw materials can be immediately deposited on the surface of the object to be deposited after the reaction at the through holes, reducing the loss in the transportation process, and achieving a high raw material utilization rate, ensuring that the raw materials are fully mixed and evenly mixed, and the products after the reaction can be more evenly distributed on the object to be deposited to form a uniform film with high uniformity and high deposition efficiency; exhausting gas from the output pipe at the top can ensure the gas smoothness of the device and the transportation efficiency of the raw materials.

[0040] In some embodiments, Figure 1 As shown, the vapor deposition device further includes a cover 70 detachably connected to the deposition body, and exemplary detachable connections include threaded connections, snap-fit ​​connections, etc. The cover 70 is disposed on the top of the vapor deposition device and can be lifted and partially or completely separated from the deposition body, so that an operator can easily remove the object to be deposited 60 from the top of the vapor deposition device, and it is also convenient for cleaning and maintenance of the vapor deposition device.

[0041] In some embodiments, a gas channel 51 and an output pipe 50 are provided in the cover body 70 , and the output pipe 50 is connected to the first cavity 10 through the gas channel 51 , so as to ensure smooth gas flow and improve work efficiency.

[0042] In some embodiments, Figure 1 As shown, the vapor deposition device further includes a second side wall 120, a first bottom wall 130 and a second bottom wall 140. The first bottom wall 130 and the first side wall 110 form a first cavity 10, the second side wall 120 surrounds the first side wall 110, the second bottom wall 140 is located at the bottom side of the first bottom wall 130, and the first side wall 110, the second side wall 120 and the second bottom wall 140 form a ring-shaped second cavity 20. In some embodiments, as Figure 1 As shown, the axis Z of the annular second cavity 20 may extend along the top and bottom directions.

[0043] In some embodiments, Figure 2 As shown, the annular second cavity 20 may be in the shape of a circular ring, that is, the cross sections of the first side wall 110 and the second side wall 120 are both cylindrical.

[0044] Figure 3 is another exemplary cross-sectional view of a first side wall and a second side wall according to some embodiments of the present specification.

[0045] In some embodiments, the cross-sectional shape of the first side wall 110 and the second side wall 120 may be any other regular or irregular polygon, for example Figure 3 The hexagon shown.

[0046] In some embodiments, the cross-sectional shapes of the first sidewall 110 and the second sidewall 120 may be the same or different.

[0047] In some embodiments, the second cavity 20 is disposed around the first cavity 10 , which is beneficial for the two gaseous raw materials in the second cavity 20 and the first cavity 10 to be evenly mixed at the through hole, and is beneficial for even vapor deposition.

[0048] In some embodiments, Figure 1 As shown, the first input pipe 30 is located inside the second output pipe 40 to fit the annular second cavity 20 .

[0049] By arranging the relative positions of the first input pipe and the second input pipe corresponding to the first cavity and the second cavity, it is advantageous for the gaseous raw material to fill the first cavity and the second cavity more quickly and evenly.

[0050] Figure 4 is an exemplary structural diagram of a through hole according to some embodiments of the present specification.

[0051] In some embodiments, Figure 4As shown, the plurality of through holes 111 are arranged in an array, the direction of the columns in the array is parallel to the axial direction of the annular second cavity 20, and the rows in the array extend along the circumference of the annular second cavity 20. Figure 1 , Figure 2 and Figure 4 As shown, the axis direction is the Z direction.

[0052] The rows extending circumferentially in the through holes of the array allow the gaseous raw materials to be mixed more evenly at the through holes, and the columns extending along the axial direction in the through holes of the array allow the gaseous raw materials to be mixed at different positions in the axial direction, thereby avoiding the situation where more and unevenly deposited raw materials at the bottom are compared to those at the top due to gravity after one-time mixing. The through holes arranged in an array can ensure the uniformity of the mixing of the gaseous raw materials, and can quickly and evenly fill the first cavity, thereby improving the reaction efficiency and ensuring the uniformity of deposition.

[0053] Figure 5 is another exemplary structural diagram of a through hole according to some embodiments of the present specification.

[0054] In some embodiments, Figure 5 As shown, in each column of the plurality of through holes 111 , the through holes 111 closer to the bottom side have smaller opening areas.

[0055] Since the gaseous raw materials are transported from the bottom to the top, the reaction at the bottom through hole will proceed earlier than that at the top, so the concentration of the reaction product at the bottom may be greater than that at the top, that is, the concentration of the reaction product gradually decreases from the bottom to the top. In order to ensure uniformity as much as possible, the opening area of ​​the through hole closer to the bottom is set to be smaller, so that the mixing degree of the two gaseous raw materials at the bottom is low and the reaction degree is smaller, so as to avoid the reaction products from accumulating too thickly at the bottom of the vapor deposition device under the influence of gravity.

[0056] Figure 6 is another exemplary structural diagram of a through hole according to some embodiments of the present specification.

[0057] In some embodiments, Figure 6 As shown, the opening size of the through hole 111 is smaller on the side close to the first cavity 10 and larger on the side close to the second cavity 20. That is, the cross section of the through hole 111 in the thickness direction thereof may be truncated cone-shaped.

[0058] In some embodiments, the pressure of the gaseous raw material in the second chamber 20 may be greater than the pressure of the gas in the first chamber 10 .

[0059] By setting different opening sizes on both sides of the through hole and setting different gas pressures in the two cavities, the gas in the first cavity can be prevented from entering the second cavity as much as possible, which is conducive to the gaseous raw materials in the second cavity entering the first cavity, thereby ensuring that the products after the reaction are all in the first cavity for vapor deposition.

[0060] In some embodiments, the first input pipe 30 and the second input pipe 40 are both located at the bottom end along the axis direction of the annular second cavity 20, and the output pipe 50 is located at the top end along the axis direction of the annular second cavity 20. Figure 1 As shown by the arrows, the two gaseous raw materials are transported from the bottom to the top by the first input pipe 30 and the second input pipe 40 respectively. The gaseous raw materials can fully fill the two input pipes during the transportation process, thereby ensuring the transportation efficiency of the raw materials and improving the utilization rate of the raw materials.

[0061] In some embodiments, Figure 1 As shown, the vapor deposition apparatus further includes a support structure 80. The support structure 80 is used to support the deposition body. In some embodiments, the support structure 80 is disposed in the first chamber 10, and the bottommost row of the plurality of through holes 111 is flush with the top surface of the support structure 80.

[0062] In some embodiments, the bottom row of through holes 111 among the plurality of through holes 111 arranged in an array is flush with the top surface of the support structure 80, and the gaseous raw materials in the second cavity 20 are input into the first cavity 10 only from this position, that is, the two gaseous raw materials begin to mix here, thereby avoiding the premature mixing and reaction of the gaseous raw materials leading to uneven deposition.

[0063] In some embodiments, Figure 1 and Figure 2 As shown, the vapor deposition device further includes a first heating component 91. The first heating component 91 is used to heat the gaseous raw materials in the second input pipe 40 and the second chamber 20. The exemplary first heating component 91 may be a resistance wire, an electric heating tube, or the like.

[0064] In some embodiments, the first heating component 91 includes a side portion and a bottom portion, the side portion is arranged around the outside of the second side wall 120, and is used to heat the gaseous raw material between the second side wall 120 and the first side wall 110, and the bottom portion is located on the bottom side of the second bottom wall 140, and is used to heat the gaseous raw material between the second bottom wall 140 and the first bottom wall 130. The first heating component 91 can fully preheat the gaseous raw material in the second input pipe 40 and the second cavity 20, that is, the first heating component 91 can heat the gaseous raw material in the second input pipe 40 and the second cavity 20 to any preset temperature without affecting the temperature of the gaseous raw material in the first input pipe 30 and the first cavity 10.

[0065] In some embodiments, the vapor deposition apparatus further includes a second heating element 92, which is disposed in the first chamber 10. The second heating element 92 is used to heat the gaseous raw material of the first input pipe 30 and the gas in the first chamber 10. That is, the second heating element 92 can heat the gaseous raw material of the first input pipe 30 and the gas in the first chamber 10 to any preset temperature.

[0066] In some embodiments, the second heating element 92 is also used to heat and maintain the reaction temperature required for the gas phase reaction.

[0067] In some embodiments, when the object to be deposited 60 is hollow (eg, a hollow cylinder), the second heating element 92 may be disposed in the inner hollow of the object to be deposited 60 to heat and maintain the reaction temperature required for the gas phase reaction.

[0068] The exemplary second heating element 92 may be a resistance wire, an electric heating tube, or the like.

[0069] By setting up the first heating element and the second heating element, the gas phase required for chemical vapor deposition can be separated, the two gaseous raw materials can be preheated and activated respectively, and mixed and reacted uniformly on the surface of the object to be deposited, thereby improving the utilization rate of the raw materials and the reaction efficiency.

[0070] In some embodiments, the material of the first bottom wall 130 and the first side wall 110 that enclose the first cavity 10 is at least one of graphite, high thermal conductivity ceramics and metal; the material of the second side wall 120 and the second bottom wall 140 that enclose the second cavity is at least one of graphite, high thermal conductivity ceramics and metal.

[0071] By using materials with excellent thermal conductivity and high temperature resistance, the temperature uniformity in the chamber can be improved and the deposition quality can be ensured; at the same time, the materials used have good chemical stability and mechanical strength, can resist corrosion and pressure changes, and extend the service life.

[0072] For example, when using the vapor deposition device of any of the aforementioned embodiments, the reaction gas and functional gas (carrier gas, dilution gas, etc.) required for the gas-phase chemical reaction can be separated into two sets of delivery pipes in the first input pipe 30 and the second input pipe 40, and transported through the second cavity respectively. At the same time, the reaction gas and functional gas are heated and fully preheated and activated by the first heating component 91 and the second heating component 92 respectively, and then mixed and reacted at the through hole 111 to realize chemical vapor deposition on the surface of the object to be deposited 60. Subsequently, the remaining carrier gas and reaction-generated gas are discharged from the output pipe 50 to complete the deposition process.

[0073] The following is further explained with examples.

[0074] For example, chemical vapor deposition of TaC coating is performed on the surface of a to-be-deposited object 60 (cylinder) with a height of 300 mm and a diameter of 220 mm.

[0075] The reaction substances used in the chemical vapor deposition process of TaCl5 coating include TaCl5, C2H4, H2, and N2. The chemical reaction formula is as follows:

[0076] TaCl5+H2→Ta+HCl ①

[0077] C2H4→C+H2 ②

[0078] C+Ta→TaC ③

[0079] Using the vapor deposition apparatus of the above embodiment:

[0080] TaCl5 and N2 are introduced into the first input pipe 30, wherein the amount of TaCl5 introduced is about 0.1-3 g / min, and the amount of N2 introduced as the transport gas is about 100 ml / min-1000 ml / min. C2H4, H2, and N2 are introduced into the second input pipe 40, wherein the amount of C2H4 introduced is about 10 ml / min-120 ml / min, the amount of H2 introduced is about 20 ml / min-500 ml / min, and the amount of N2 introduced is about 1 L / min-30 L / min.

[0081] The temperature of the first heating component 91 is set to about 700° C.-1200° C., and the heating temperature of the second heating component 92 is set to about 900° C.-1300° C.

[0082] The through holes 111 are evenly distributed on the side facing the deposition workpiece, the diameter of the output tube 50 is about 0.1mm-3mm, the center spacing of the through holes 111 is about 0.5mm-5mm, and the vertical distance between the through holes 111 and the surface of the object 60 to be deposited is about 2mm-20mm.

[0083] After vapor deposition according to the above parameters, TaC coating deposition with a deposition rate of >20um / h, surface thickness deviation <10%, and reaction material utilization rate >70% was achieved on the surface of the object to be deposited 60 (cylinder) with a height of 300mm and a diameter of 220mm.

[0084] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this specification. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this specification.

[0085] At the same time, this specification uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of this specification. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures or characteristics in one or more embodiments of this specification can be appropriately combined.

[0086] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, as an example and not a limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.

Claims

1. A vapor deposition device, characterized in that: include: A deposition body, the deposition body comprising a first cavity, a second cavity and a first side wall; the first cavity is arranged in the second cavity, the first cavity is configured to accommodate an object to be deposited; the first side wall surrounds the first cavity, the first side wall is provided with a plurality of through holes, the plurality of through holes communicating with the first cavity and the second cavity; The first input pipe is connected to the first cavity; The second input pipe is connected to the second cavity; The output pipe is connected to the first cavity.

2. The vapor deposition device according to claim 1, characterized in that: It also includes a cover body detachably connected to the deposition body, wherein a gas channel and the output pipe are provided in the cover body, and the output pipe is connected to the first cavity through the gas channel.

3. The vapor deposition apparatus according to claim 1, characterized in that: It also includes a second side wall, a first bottom wall and a second bottom wall, the first bottom wall and the first side wall form the first cavity, the second side wall surrounds the first side wall, the second bottom wall is located on the bottom side of the first bottom wall, and the first side wall, the second side wall and the second bottom wall form a ring-shaped second cavity.

4. The vapor deposition device according to claim 3, characterized in that: The plurality of through holes are arranged in an array, the direction of the columns in the array is parallel to the axial direction of the annular second cavity, and the rows in the array extend along the circumference of the annular second cavity.

5. The vapor deposition apparatus according to claim 4, characterized in that: The first input pipe and the second input pipe are both located at the bottom end along the axial direction of the annular second cavity, and the output pipe is located at the top end along the axial direction of the annular second cavity; It also includes a supporting structure, which is arranged in the first cavity; a row of the plurality of through holes located at the bottom is flush with the top surface of the supporting structure.

6. The vapor deposition apparatus according to claim 4, characterized in that: In each column of the plurality of through holes, the through holes closer to the bottom have smaller opening areas.

7. The vapor deposition apparatus according to claim 3, characterized in that: The first input pipe is located inside the second output pipe.

8. The vapor deposition apparatus according to claim 3, characterized in that: It also includes a first heating component, which includes a side portion and a bottom portion; the side portion is arranged around the outside of the second side wall; and the bottom is located on the bottom side of the second bottom wall.

9. The vapor deposition apparatus according to claim 3, characterized in that: It also includes a second heating element, which is arranged in the first cavity.

10. The vapor deposition apparatus according to claim 1, characterized in that: The first bottom wall and the first side wall of the first cavity are made of at least one of graphite, high thermal conductivity ceramics and metal; the second side wall and the second bottom wall of the second cavity are made of at least one of graphite, high thermal conductivity ceramics and metal.

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