Vapor deposition device and method

Abstract

The embodiment of the invention provides a vapor deposition device and method which are applied to a surface deposition process of a workpiece, the device comprises a profiling flow field structure, the profiling flow field structure encloses a deposition cavity, and the deposition cavity comprises an inlet flow channel and an outlet flow channel; the temperature control assembly is arranged on the outer side of the profiling flow field structure and is configured to control the temperature in the deposition cavity; the first conveying assembly is connected with the inlet flow channel and is configured to convey raw materials into the deposition cavity through the inlet flow channel; the flow control assembly is connected with the first conveying assembly and is configured to regulate and control the flow of the gas conveyed to the deposition cavity by the first conveying assembly; the pressure control assembly is configured to regulate and control the air pressure in the deposition cavity; the shape of at least part of the inner wall of the profiling flow field structure is matched with the shape of the to-be-deposited surface of the workpiece, when the workpiece is installed in the deposition cavity, a deposition runner is formed between the to-be-deposited surface and at least part of the inner wall, one end of the deposition runner communicates with the inlet runner, and the other end of the deposition runner communicates with the outlet runner.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a vapor deposition device and method. Background Art

[0002] Vapor deposition technology is a technology that uses physical and chemical processes in the gas phase to change the surface composition of the workpiece and form a metal or compound coating with special properties on the surface. When ordinary vapor deposition equipment is depositing workpieces, it is usually difficult to simultaneously meet the requirements of high raw material utilization and high uniformity of deposited films.

[0003] In view of this, it is desired to provide a vapor deposition apparatus and method that can improve the utilization rate of raw materials while ensuring uniform deposition of a thin film on a deposited workpiece. Summary of the invention

[0004] One or more embodiments of the present specification provide a vapor deposition device, which is applied to the surface deposition process of a workpiece, comprising: a contoured flow field structure, wherein the contoured flow field structure encloses a deposition chamber, wherein the deposition chamber comprises an inlet flow channel and an outlet flow channel; a temperature control component, which is arranged outside the contoured flow field structure and is configured to control the temperature in the deposition chamber; a first transport component, which is connected to the inlet flow channel and is configured to transport raw materials into the deposition chamber through the inlet flow channel; a flow control component, which is connected to the first transport component and is configured to regulate the gas flow rate transported by the first transport component to the deposition chamber; a pressure control component, which is configured to regulate the gas pressure in the deposition chamber; the shape of at least a portion of the inner wall of the contoured flow field structure matches the shape of the surface to be deposited of the workpiece, and when the workpiece is installed in the deposition chamber, a deposition channel is formed between the surface to be deposited and the at least portion of the inner wall, and one end of the deposition channel is connected to the inlet flow channel, and the other end is connected to the outlet flow channel.

[0005] One of the embodiments of the present specification provides a vapor deposition method, which is applied to the vapor deposition device, and the method includes: determining temperature information and pressure information in a deposition chamber based on a target deposit; obtaining target deposition parameters, wherein the target deposition parameters include a target utilization rate and / or a target uniformity; and determining first parameter information of a raw material and second parameter information of a deposition channel based on the target deposition parameters, the temperature information, and the pressure information, wherein the deposition channel is a contoured channel. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] This specification will be further described in the form of exemplary embodiments, which will be described in detail by the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:

[0007] Figure 1is an exemplary structural schematic diagram of a vapor deposition device according to some embodiments of this specification;

[0008] Figure 2 is an exemplary schematic diagram of a contoured flow field structure according to some embodiments of this specification;

[0009] Figure 3 is an exemplary structural diagram of a control system according to some embodiments of this specification;

[0010] Figure 4 is an exemplary flow chart of a vapor deposition method according to some embodiments of the present specification. DETAILED DESCRIPTION

[0011] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of this specification. For ordinary technicians in this field, this specification can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0012] It should be understood that the "system", "device", "unit" and / or "module" used herein are a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0013] Unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0014] Flowcharts are used in this specification to illustrate the operations performed by the system according to the embodiments of this specification. It should be understood that the preceding or following operations are not necessarily performed precisely in order. Instead, the steps may be processed in reverse order or simultaneously. At the same time, other operations may also be added to these processes, or one or more operations may be removed from these processes.

[0015] In order to improve the raw material utilization rate and the uniformity of the deposited film in the vapor deposition process, some embodiments of the present specification provide a vapor deposition device and method to improve the principle utilization rate and deposition uniformity of vapor deposition, ensure that the produced workpieces have more stable quality, and help save production costs.

[0016] Figure 1 It is a schematic diagram of an exemplary structure of a vapor deposition device according to some embodiments of the present specification.

[0017] In some embodiments, Figure 1 As shown, the vapor deposition apparatus 100 may include a contoured flow field structure 110 , a temperature control component 120 , a first transport component 130 , a flow control component 140 and a pressure control component 150 .

[0018] The contoured flow field structure 110 is a specially designed fluid channel structure, and the shape of its inner wall matches the shape of the workpiece. In some embodiments, the shape of at least part of the inner wall of the contoured flow field structure 110 matches the shape of the surface to be deposited on the workpiece. Shape matching refers to the same shape type, but the shape parameters (such as angle, length, etc.) are not necessarily the same. For example, if the surface of the workpiece to be deposited is a plane, then the inner wall is also a plane, and the two may be parallel or non-parallel; for another example, if the surface to be deposited is a curved surface, then the inner wall is also a curved surface, and the curvature, center of the circle, etc. of the two may not be the same.

[0019] Figure 2 is an exemplary schematic diagram of a contoured flow field structure according to some embodiments of the present specification.

[0020] In some embodiments, Figure 2 As shown, when a cross section of the workpiece to be deposited is a triangle, the contoured flow field structure 110 corresponding to the cross section can also be set to a triangle of similar shape and include two openings to respectively connect the inlet flow channel and the outlet flow channel.

[0021] The contoured flow field structure 110 surrounds the workpiece to form a deposition chamber. In some embodiments, the deposition chamber includes an inlet flow channel and an outlet flow channel.

[0022] The deposition channel refers to the gas flow channel formed between the inner wall of the contoured flow field structure 110 and the surface of the workpiece to be deposited. For example, the deposition channel can be the path for the gas to enter the deposition chamber from the inlet channel, flow along the surface of the workpiece and finally be discharged from the outlet channel.

[0023] In some embodiments, one end of the deposition channel is connected to the inlet channel, and the other end is connected to the outlet channel. In some embodiments, the width of the deposition channel can be uniform or non-uniform.

[0024] In some embodiments, the width D of the deposition channel may decrease from the inlet channel end to the outlet channel end.

[0025] In some embodiments of the present specification, since the raw material concentration at the inlet is high, the amount of raw material contacting the surface to be deposited can be reduced by setting the width of the deposition channel wider, while the raw material concentration at the outlet is low, and the amount of raw material contacting the surface to be deposited can be increased by setting the width of the deposition channel narrower. Therefore, the tapered deposition channel design can enable the raw material to cover the workpiece surface more evenly.

[0026] In some embodiments of the present specification, by setting the inner wall shape of the contoured flow field structure to match the surface to be deposited of the workpiece, it is ensured that the flow path of the deposition gas on the surface of the workpiece is more uniform. When the workpiece is installed in the deposition chamber, a deposition flow channel is formed between the surface to be deposited and the inner wall of the contoured flow field structure, so that the gas can be evenly distributed along the surface of the workpiece, avoiding the problem of uneven local deposition.

[0027] In some embodiments, the vapor deposition apparatus 100 includes a crucible, and the inner wall of the crucible constitutes a contoured flow field structure 110 .

[0028] A crucible is a container that is resistant to high temperatures and chemical corrosion, and can hold, melt, heat or process various substances under high temperature conditions, such as metals, ores, glass, ceramics, etc. For example, the crucible can be a graphite crucible, a ceramic crucible, etc.

[0029] In some embodiments of the present specification, by designing the inner wall of the crucible as a contoured flow field structure, the airflow path can be optimized. The heat conduction characteristics of the inner wall of the crucible can also be utilized to ensure a more uniform temperature distribution on the workpiece surface, which helps to reduce the problem of uneven deposition caused by temperature gradients and further improve the quality of the film.

[0030] In some embodiments, the vapor deposition apparatus 100 includes a crucible, and the contoured flow field structure 110 is connected to the inner wall of the crucible. For example, the inner wall of the crucible may wrap the contoured flow field structure 110.

[0031] In some embodiments of the present specification, by setting the inner wall of the crucible to be connected to the contoured flow field structure, the contoured flow field structure can be designed separately, and the required contoured flow field structure can be replaced according to the shape of the workpiece without having to redesign the crucible each time, while also reducing the loss of the inner wall of the crucible.

[0032] The temperature control component 120 refers to a device for controlling and adjusting the internal temperature of the vapor deposition apparatus 100. For example, the temperature control component 120 may be a resistance heating temperature control component, an induction heating temperature control component, an infrared heating temperature control component, or the like.

[0033] In some embodiments, the temperature control assembly 120 may be composed of a temperature sensor, a heating / cooling element, a temperature controller, etc. The temperature sensor may be used to monitor the temperature in the deposition chamber in real time; the heating / cooling element may be used to increase / reduce the temperature in the deposition chamber, such as a heating element may be a resistive type, an inductive type, an infrared type, etc., and a cooling element may be a condensation type, an evaporation type, etc.; the temperature controller may be used to automatically adjust the power of the heating or cooling system according to the feedback information of the temperature sensor to ensure that the temperature is stable at the set value.

[0034] In some embodiments, the temperature control assembly 120 is disposed outside the contoured flow field structure 110. In some embodiments, the temperature control assembly can be configured to control the temperature within the deposition chamber.

[0035] In some embodiments of the present specification, by providing a temperature control component, it is possible to ensure that the deposition process is carried out within an optimal temperature range, thereby avoiding problems such as uneven deposition due to excessive temperature fluctuations.

[0036] The first transport component 130 is a device for transporting raw materials required for the vapor deposition process from a storage source to the deposition chamber. For example, the first transport component 130 can be a gas raw material transport component, a liquid raw material evaporation transport component, and the like.

[0037] In some embodiments, the first transport assembly 130 may be connected to the inlet flow channel and transport the raw material into the deposition chamber through the inlet flow channel.

[0038] The flow control component 140 refers to a device for controlling and regulating the gas flow in the vapor deposition device. For example, the flow control component 140 can be a mass flow controller, a proportional valve flow control component, an electromagnetic flow control component, etc.

[0039] In some embodiments, the flow control component 140 may be composed of a flow sensor, a flow regulating valve, a flow controller, etc. Among them, the flow sensor may be used to monitor the gas flow in real time to ensure that the flow is within a set range; the flow regulating valve may be used to adjust the gas flow to increase or decrease the gas flow as needed; the flow controller may automatically adjust the opening of the flow regulating valve according to the feedback information of the flow sensor to ensure that the flow is stable at the set value.

[0040] In some embodiments, the flow control component 140 may be connected to the first delivery component 130 to adjust the flow of the gas delivered by the first delivery component 130 to the deposition chamber.

[0041] In some embodiments of the present specification, a flow control component can be used to achieve more detailed regulation of the gas flow rate, thereby avoiding uneven deposition or waste of raw materials caused by improper gas flow setting.

[0042] The pressure control component 150 refers to a device for controlling and adjusting the internal gas pressure of the vapor deposition device. For example, the pressure control component 150 can be a mechanical vacuum pump pressure control component, a gas input valve pressure control component, and the like.

[0043] In some embodiments, the pressure control assembly 150 may be composed of a pressure sensor, a gas input valve, a pressure controller, etc. The pressure sensor may be used to monitor the gas pressure in the deposition chamber in real time; the gas input valve may introduce reaction gas, carrier gas or other gas to increase the gas pressure; the pressure controller may automatically adjust the working state of the vacuum pump or the gas input valve according to the feedback information of the pressure sensor to ensure that the gas pressure is stable at the set value.

[0044] In some embodiments of the present specification, by providing a pressure control component, real-time control of the gas pressure can be achieved to avoid uneven deposition or film defects caused by gas pressure fluctuations.

[0045] In some embodiments, the vapor deposition apparatus 100 may further include a second transport component 160 , and the second transport component 160 is connected to the outlet flow channel.

[0046] The second transport component 160 is a device for discharging the remaining deposition raw materials in the deposition chamber. In some embodiments, the second transport component 160 is configured to output the remaining deposition raw materials (such as unreacted raw material gas, carrier gas, inert gas, etc.) from the deposition chamber through an outlet flow channel.

[0047] During the vapor deposition process, some of the reaction gases may not fully participate in the reaction and are directly discharged from the outlet flow channel. In some embodiments of the present specification, by connecting the second transport component to the outlet flow channel, the unreacted gas can be effectively recovered and properly processed, and the raw material utilization rate can be obtained based on the recovered gas, which helps to provide a reference for the subsequent parameter setting of the vapor deposition.

[0048] In some embodiments, the pressure control component 150 may be disposed between the outlet flow channel and the second transport component 160 to monitor and adjust the gas flow rate and pressure in the outlet flow channel in real time, so that the gas pressure and flow rate in the deposition chamber are maintained within a certain range.

[0049] In some embodiments of the present specification, by disposing a pressure control component between the outlet flow channel and the second transport component, it helps to maintain stable deposition conditions and avoid deposition unevenness or quality problems caused by pressure or flow fluctuations.

[0050] In some embodiments, a support member is disposed in the deposition chamber, and the workpiece is installed in the deposition chamber through the support member.

[0051] The support member refers to a structure or component used to fix and support the workpiece. In some embodiments, the support member can firmly mount the workpiece in the deposition chamber to prevent the workpiece from displacement or deformation during the deposition process.

[0052] In some embodiments, the support member may be made of a material that is resistant to high temperatures, has good chemical stability, and has high mechanical strength, such as quartz, ceramic, stainless steel, silicon carbide, and the like.

[0053] In some embodiments, the support member may include a pin, etc. In some embodiments, the support member may also have various forms, such as a tray type, a clamp type, a suspension type, and a rotary type, depending on the shape of the workpiece and the deposition process requirements.

[0054] In some embodiments of the present specification, by providing a support, the workpiece can be better fixed at a specific position in the deposition chamber, ensuring that the workpiece will not be displaced or tilted during the deposition process, helping to maintain a consistent gas flow path on the surface of the workpiece, and avoiding uneven deposition caused by the movement of the workpiece. At the same time, by using a pin for fixing, only a small amount of contact is required on the edge or back of the workpiece, reducing interference with the workpiece surface, ensuring that the gas can evenly cover the workpiece surface, and avoiding the phenomenon of local deposition being too thick or too thin.

[0055] In some embodiments, the raw materials transported by the first transport component 130 include titanium tetrachloride (TiCl4), hydrogen (H2) and methane (CH4), the temperature of the deposition chamber is 1100°C-1300°C, the gas pressure in the deposition chamber is 1-8kPa, the gas flow rate is 5-30slm, the width of the deposition channel at the inlet channel end is 20-40mm, and the width of the deposition channel at the outlet channel end is 2-10mm. For example, when the raw materials transported by the first transport component 130 include titanium tetrachloride (TiCl4), hydrogen (H2) and methane (CH4), the temperature of the deposition chamber can be 1200°C, the gas pressure in the deposition chamber can be 6kPa, the gas flow rate can be 25slm, the width of the deposition channel at the inlet channel end can be 30mm, and the width of the deposition channel at the outlet channel end can be 8mm.

[0056] During the vapor deposition process, by using the above deposition parameters, uniform deposition of titanium carbide (TiC) coating can be achieved on the workpiece surface, and the raw material utilization rate reaches more than 70%. Uniform deposition means that points are uniformly taken on the surface of the workpiece after deposition and the coating thickness is tested. The deviation of the maximum and minimum values ​​of the thickness obtained from the average thickness is less than 15% of the average thickness, and the number of points taken is not less than the preset number. The preset number can be set manually, for example, it can be 10.

[0057] In some embodiments, the raw materials transported by the first transport component 130 include trichlorosilane (SiHCl3), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 1400°C-1700°C, the gas pressure in the deposition chamber is 5-20kPa, the gas flow rate is 80-150slm, and the width of the deposition channel is 5-25mm. For example, when the raw materials transported by the first transport component 130 include trichlorosilane (SiHCl3), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber can be 1400°C, the gas pressure in the deposition chamber can be 8kPa, the gas flow rate can be 90slm, the width of the deposition channel at one end of the inlet channel can be 20mm, and the width of the deposition channel at one end of the outlet channel can be 5mm. The width of the deposition channel can also be constant, for example, it can be 20mm.

[0058] In the vapor deposition process, by using the above deposition parameters, uniform deposition of silicon carbide (SiC) coating can be achieved on the workpiece surface, and the raw material utilization rate reaches more than 65%.

[0059] In some embodiments, the raw materials transported by the first transport component 130 include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 800°C-1300°C, the gas pressure in the deposition chamber is 1-10kPa, the gas flow rate is 5-50slm, and the width of the deposition channel is 2-10mm. For example, when the raw materials transported by the first transport component 130 include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber can be 900°C, the gas pressure in the deposition chamber can be 9kPa, the gas flow rate can be 30slm, the width of the deposition channel at one end of the inlet channel can be 10mm, and the width of the deposition channel at one end of the outlet channel can be 2mm. The width of the deposition channel can also be constant, for example, it can be 5mm.

[0060] In the vapor deposition process, by using the above deposition parameters, a uniform deposition of tantalum carbide (TaC) coating can be achieved on the workpiece surface, and the raw material utilization rate reaches more than 75%.

[0061] In some embodiments, the raw materials transported by the first transport component 130 include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 1200°C-1700°C, the gas pressure in the deposition chamber is 1-10kPa, the gas flow rate is 150-300slm, and the width of the deposition channel is 10-40mm. For example, when the raw materials transported by the first transport component 130 include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber can be 1300°C, the gas pressure in the deposition chamber can be 5kPa, the gas flow rate can be 200slm, the width of the deposition channel at one end of the inlet channel can be 30mm, and the width of the deposition channel at one end of the outlet channel can be 15mm. The width of the deposition channel can also be constant, for example, it can be 20mm.

[0062] In the vapor deposition process, by using the above deposition parameters, a uniform deposition of tantalum carbide (TaC) coating can be achieved on the workpiece surface, and the raw material utilization rate reaches more than 70%.

[0063] In some embodiments, the raw materials transported by the first transport component 130 include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 1100°C-1500°C, the gas pressure in the deposition chamber is 1-10kPa, the gas flow rate is 50-150slm, and the width of the deposition channel is 20-50mm. For example, when the raw materials transported by the first transport component 130 include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber can be 1400°C, the gas pressure in the deposition chamber can be 10kPa, the gas flow rate can be 100slm, the width of the deposition channel at one end of the inlet channel can be 50mm, and the width of the deposition channel at one end of the outlet channel can be 30mm. The width of the deposition channel can also be constant, for example, it can be 40mm.

[0064] In the vapor deposition process, by using the above deposition parameters, uniform deposition of tantalum carbide (TaC) coating can be achieved on the workpiece surface, and the raw material utilization rate reaches more than 65%.

[0065] It should be noted that the above description of the vapor deposition apparatus 100 and its components is only for convenience of description and does not limit the present specification to the scope of the embodiments. It is understandable that, after understanding the principle of the apparatus, those skilled in the art may arbitrarily combine the components or form a subsystem to connect with other components without departing from the principle. In some embodiments, Figure 1The contoured flow field structure 110, the temperature control component 120, the first transport component 130, the flow control component 140, the pressure control component 150 and the second transport component 160 disclosed in the invention can be different components in one device, or one component can realize the functions of two or more components mentioned above. For example, each component can be provided with a general controller, or each component can be provided with its own controller. Such variations are all within the protection scope of this specification.

[0066] Figure 3 It is a schematic diagram of an exemplary structure of a control system according to some embodiments of the present specification.

[0067] The control system 300 is a system for controlling the vapor deposition apparatus 100 to perform vapor deposition. In some embodiments, the control system 300 may be electrically connected to the vapor deposition apparatus 100.

[0068] In some embodiments, the control system 300 may include an interaction module 310 , a processor 320 , a memory 330 , and the like.

[0069] The interaction module 310 is used to enable the technician to interact with the vapor deposition apparatus 100. For example, the technician can view or set relevant parameters of the vapor deposition through the interaction module 310. In some embodiments, the interaction module 310 may include a display module (such as a display screen), an input module (such as a keyboard, a touch screen), and the like.

[0070] The processor 320 refers to a device or component that processes data and generates instructions, such as a central processing unit (CPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), etc. or any combination thereof. The data may come from different components of the vapor deposition apparatus 100 or other data sources. Instructions may be sent to different components of the vapor deposition apparatus 100. The processor 320 may also include other components related to the above content, for example, the processor 320 may also refer to a computer, a mobile phone, a server, an industrial computer, a circuit board with computing functions, etc.

[0071] The memory 330 refers to a device with storage capability. For example, the memory 330 may include a removable memory, a volatile read-write memory (e.g., a random access memory RAM), a read-only memory (ROM), etc., or any combination thereof. In some embodiments, the memory 330 may store data information output by the processor 320 and generated by the vapor deposition apparatus 100.

[0072] Figure 4 is an exemplary flow chart of a vapor deposition method according to some embodiments of this specification. Figure 4As shown, the process 400 includes the following steps. In some embodiments, the process 400 can be applied to the vapor deposition apparatus 100 and executed by the control system 300 .

[0073] In some embodiments, the control system can be configured to: determine temperature information and pressure information in the deposition chamber based on the target deposit; obtain target deposition parameters; and determine first parameter information of the raw material and second parameter information of the deposition channel based on the target deposition parameters, temperature information and pressure information.

[0074] Step 410 : determining temperature information and pressure information in the deposition chamber based on the target deposit.

[0075] The target deposit refers to a substance to be deposited on the surface of the workpiece, for example, the target deposit may be titanium carbide (TiC), silicon carbide (SiC), tantalum carbide (TaC), etc.

[0076] Temperature information refers to information related to the temperature required during the deposition process.

[0077] Pressure information refers to information related to the pressure required during the deposition process.

[0078] In some embodiments, the control system 300 can determine the temperature information and pressure information in the deposition chamber in a variety of ways based on the target deposit. For example, the control system 300 can determine the temperature information and pressure information in the deposition chamber by querying a first preset table based on the target deposit. The first preset table includes the correspondence between the target deposit and the temperature information and pressure information in the deposition chamber, which can be preset by a technician based on prior knowledge or historical experience.

[0079] Step 420: Obtain target deposition parameters.

[0080] Deposition parameters are parameters that reflect the deposition effect after vapor deposition. For example, deposition parameters may include raw material utilization and deposition uniformity.

[0081] The target deposition parameter is a parameter reflecting the effect of the target deposit that is expected to be achieved after vapor deposition. In some embodiments, the target deposition parameter may include a target utilization rate and / or a target uniformity.

[0082] The target utilization rate refers to the raw material utilization rate corresponding to the target deposit that is expected to be achieved. For example, the target utilization rate can be represented by the ratio of the raw material gas that participates in the reaction and forms the deposit layer to the total input raw material gas.

[0083] The target uniformity refers to the deposition uniformity corresponding to the target deposit that is expected to be achieved. For example, the target uniformity can be expressed by thickness deviation or uniformity coefficient.

[0084] In some embodiments, a technician may input the target deposition parameter into the vapor deposition apparatus 100 through the interaction module 310 , and the control system 300 acquires the target deposition parameter through the interaction module 310 .

[0085] Step 430 : determining first parameter information of the raw material and second parameter information of the deposition channel based on the target deposition parameters, temperature information and pressure information.

[0086] The first parameter information refers to information related to the total gas flow rate and the amount of raw materials therein.

[0087] The second parameter information refers to information related to the shape distribution, width, etc. of the deposition flow channel.

[0088] In some embodiments, the deposition channel is a contoured channel, that is, the shape of the deposition channel matches the workpiece to be deposited. For more information about the deposition channel, see Figure 1 The corresponding description.

[0089] In some embodiments, the control system 300 can determine the first parameter information of the raw material and the second parameter information of the deposition channel in a variety of ways based on the target deposition parameters, temperature information and pressure information. For example, the control system can construct a feature vector based on the target deposit, temperature information, pressure information and target deposition parameters, match it in a vector database, and use one or more reference vectors whose similarity exceeds a similarity threshold as target vectors, and use the labels corresponding to one or more target vectors whose deposition parameters exceed the target deposition parameters to obtain the first parameter information of the raw material and the second parameter information of the deposition channel through weighted calculation.

[0090] Among them, the vector database includes reference vectors and their corresponding labels. The reference vectors are composed of the sediments, temperature information, pressure information used in the actual vapor deposition process in the historical records, and the deposition parameters after the vapor deposition is completed. The corresponding labels can be determined based on the total gas flow rate actually used and the width of the deposition channel. The weighted weight can be determined based on the similarity corresponding to the target vector, and the similarity can be calculated based on the cosine distance, Euclidean distance, etc.

[0091] In some embodiments of the present specification, by determining the temperature information and pressure information in the deposition chamber based on the target deposit, and determining the first parameter information and the second parameter information in combination with the target deposition parameters, the vapor deposition device can be set with parameters that are more in line with the actual situation, thereby improving the accuracy of the deposition process and better ensuring the utilization rate of raw materials and the uniformity of deposition.

[0092] It should be noted that the above description of process 400 is only for example and explanation, and does not limit the scope of application of this specification. For those skilled in the art, various modifications and changes can be made to process 400 under the guidance of this specification. However, these modifications and changes are still within the scope of this specification.

[0093] In some embodiments, the control system 300 may be further configured to: acquire historical deposition data related to the target deposit; and determine the first reference range and the second reference range based on the historical deposition data.

[0094] Historical deposition data refers to data related to the historical vapor deposition process. For example, historical deposition data related to the target deposit may include temperature information, pressure information, total gas flow rate, width of the deposition channel, deposition uniformity, raw material utilization rate, etc. of vapor deposition when the raw materials used are the same as the target deposit in the historical data.

[0095] In some embodiments, the control system 300 may retrieve historical deposition data associated with the target deposits from a memory.

[0096] The first reference range refers to a reference range related to the first parameter information. For example, the first reference range may include a reference range of the flow rate of the target sediment corresponding to the raw material.

[0097] The second reference range refers to a reference range related to the second parameter information. For example, the second reference range may include a reference range of a width of a deposition channel.

[0098] In some embodiments, the control system 300 can determine the first reference range and the second reference range in a variety of ways based on historical deposition data. For example, the control system 300 can select data corresponding to deposition uniformity exceeding a first threshold value and raw material utilization exceeding a second threshold value in historical deposition data, and use the upper and lower limits of the total gas flow rate in these data as the upper and lower limits of the preferred flow range of the raw material corresponding to the target deposit, and use the upper and lower limits of the width of the deposition channel in these data as the upper and lower limits of the reference range of the width of the deposition channel corresponding to the target deposit. Among them, the first threshold value and the second threshold value can be set manually.

[0099] In some embodiments of the present specification, by analyzing historical deposition data and determining the first reference range and the second reference range, technicians can set a more reasonable total gas flow rate of raw materials and width of the deposition channel to improve raw material utilization, while improving the uniformity of deposition and further improving the quality of the deposited layer.

[0100] In some embodiments, the second parameter information may also include an inlet width and an outlet width of the deposition flow channel. In some embodiments, the control system 300 may also determine the second parameter information of the deposition flow channel in the following manner: in response to the target uniformity being greater than a preset threshold, determining that the deposition flow channel is a variable width flow channel, and the width of the deposition flow channel narrows from the inlet to the outlet; determining the inlet width and the outlet width of the deposition flow channel according to the second reference range.

[0101] The preset threshold is a threshold related to deposition uniformity and can be preset manually.

[0102] A variable width channel is a deposition channel whose width changes.

[0103] In some embodiments, in response to the target uniformity being greater than a preset threshold, the control system may determine that the deposition channel is a variable width channel, and the width of the deposition channel may narrow from the inlet to the outlet. The narrowing amplitude of the deposition channel from the inlet to the outlet may not exceed a preset amplitude, and the preset amplitude may be preset by a technician.

[0104] In some embodiments, the control system 300 may determine the inlet width and outlet width of the deposition channel according to the second reference range. For example, in the second reference range, if the span of the width range of the deposition channel does not exceed the preset amplitude, the upper limit of the width range of the deposition channel in the second reference range is determined as the inlet width of the deposition channel, and the lower limit of the width range of the deposition channel is determined as the outlet width of the deposition channel; if the span of the width range of the deposition channel exceeds the preset amplitude, the upper limit of the width range of the deposition channel is determined as the inlet width of the deposition channel, and the inlet width of the deposition channel minus the preset amplitude is used as the outlet width of the deposition channel.

[0105] In some embodiments of the present specification, when the requirement for deposition uniformity is high, by designing the deposition channel as a variable width channel and gradually narrowing the channel from the inlet to the outlet, the raw material contacting the deposition surface can be reduced at the front end where the raw material concentration is high, and the raw material contacting the deposition surface can be increased at the rear end where the raw material concentration is low, thereby better ensuring deposition uniformity.

[0106] In some embodiments, the temperature information includes an allowable temperature range. In some embodiments, determining the first parameter information of the raw material and the second parameter information of the deposition channel may include: determining the distribution position of the deposition temperature within the allowable temperature range; and determining the first parameter information and the second parameter information based on the distribution position, the first reference range, and the second reference range.

[0107] The allowable temperature range refers to the temperature range in which the raw materials can be deposited and grow thin films.

[0108] The deposition temperature refers to the temperature selected during vapor deposition. In some embodiments, the deposition temperature can be selected by technicians according to actual needs.

[0109] In some embodiments, the control system 300 can determine the distribution position of the deposition temperature in the allowable temperature range in a variety of ways. For example, the control system 300 can divide the allowable temperature range into multiple ranges from low to high, and use the range of the deposition temperature in the allowable temperature range as the distribution position.

[0110] In some embodiments, the control system 300 can determine the first parameter information and the second parameter information in a variety of ways according to the distribution position, the first reference range, and the second reference range. For example, when the distribution position is forward (i.e., the deposition temperature is low), the control system 300 can select a lower gas flow rate in the first reference range as the total gas flow rate in the first parameter information, and select a narrower deposition channel width in the second reference range as the deposition channel width in the second parameter information. For details, please refer to the above-mentioned embodiments of the tantalum carbide (TaC) coating.

[0111] In some embodiments of the present specification, by analyzing the distribution position of the deposition temperature within the allowable temperature range, the technician can appropriately adjust the gas flow rate in the deposition chamber and the width of the deposition channel according to the actual temperature distribution. For example, if the temperature distribution is at the low end of the allowable range, the gas flow rate and the width of the deposition channel can be reduced accordingly to meet high raw material utilization and high deposition uniformity.

[0112] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this specification. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this specification.

[0113] At the same time, this specification uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of this specification. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures or characteristics in one or more embodiments of this specification can be appropriately combined.

[0114] In addition, unless explicitly stated in the claims, the order of the processing elements and sequences described in this specification, the use of alphanumeric characters, or the use of other names are not intended to limit the order of the processes and methods of this specification. Although the above disclosure discusses some invention embodiments that are currently considered useful through various examples, it should be understood that such details are only for illustrative purposes, and the attached claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that are consistent with the essence and scope of the embodiments of this specification. For example, although the system components described above can be implemented by hardware devices, they can also be implemented only by software solutions, such as installing the described system on an existing server or mobile device.

[0115] Similarly, it should be noted that in order to simplify the description disclosed in this specification and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this specification, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the subject matter of this specification are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0116] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0117] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, documents, etc., cited in this specification are hereby incorporated by reference in their entirety. Except for application history documents that are inconsistent with or conflicting with the contents of this specification, documents that limit the broadest scope of the claims of this specification (currently or later attached to this specification) are also excluded. It should be noted that if the descriptions, definitions, and / or use of terms in the materials attached to this specification are inconsistent or conflicting with the contents described in this specification, the descriptions, definitions, and / or use of terms in this specification shall prevail.

[0118] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, as an example and not a limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.

Claims

1. A vapor deposition device, applied to a surface deposition process of a workpiece, characterized in that: The device comprises: A contoured flow field structure, wherein the contoured flow field structure encloses a deposition chamber, wherein the deposition chamber includes an inlet flow channel and an outlet flow channel; a temperature control assembly, disposed outside the contoured flow field structure and configured to control the temperature in the deposition chamber; a first transport assembly connected to the inlet flow channel and configured to transport raw materials into the deposition chamber through the inlet flow channel; a flow control component connected to the first delivery component and configured to regulate the flow of gas delivered by the first delivery component to the deposition chamber; A pressure control assembly configured to regulate the gas pressure in the deposition chamber; The shape of at least part of the inner wall of the contoured flow field structure matches the shape of the surface to be deposited of the workpiece, and when the workpiece is installed in the deposition chamber, a deposition flow channel is formed between the surface to be deposited and at least part of the inner wall, one end of the deposition flow channel is connected to the inlet flow channel, and the other end is connected to the outlet flow channel.

2. The device according to claim 1, characterized in that The device comprises a crucible, the inner wall of which constitutes the contoured flow field structure.

3. The device according to claim 1, characterized in that The device comprises a crucible, and the contoured flow structure is connected to the inner wall of the crucible.

4. The device according to claim 1, characterized in that The width of the deposition channel decreases from one end of the inlet channel to one end of the outlet channel.

5. The device according to claim 1 or 4, characterized in that: The raw materials transported by the first transport component include titanium tetrachloride (TiCl4), hydrogen (H2) and methane (CH4), the temperature of the deposition chamber is 1100℃-1300℃, the gas pressure in the deposition chamber is 1-8kPa, the gas flow rate is 5-30slm, the width of the deposition channel at one end of the inlet channel is 20-40mm, and the width of the deposition channel at one end of the outlet channel is 2-10mm.

6. The device according to claim 1 or 4, characterized in that: The raw materials transported by the first transport component include trichlorosilane (SiHCl3), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 1400℃-1700℃, the gas pressure in the deposition chamber is 5-20kPa, the gas flow rate is 80-150slm, and the width of the deposition channel is 5-25mm.

7. The device according to claim 1 or 4, characterized in that: The raw materials transported by the first transport component include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 800℃-1300℃, the gas pressure in the deposition chamber is 1-10kPa, the gas flow rate is 5-50slm, and the width of the deposition channel is 2-10mm.

8. The device according to claim 1 or 4, characterized in that: The raw materials transported by the first transport component include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 1200℃-1700℃, the gas pressure in the deposition chamber is 1-10kPa, the gas flow rate is 150-300slm, and the width of the deposition channel is 10-40mm.

9. The device according to claim 1 or 4, characterized in that: The raw materials transported by the first transport component include tantalum pentachloride (TaCl5), hydrogen (H2) and ethylene (C2H4), the temperature of the deposition chamber is 1100℃-1500℃, the gas pressure in the deposition chamber is 1-10kPa, the gas flow rate is 50-150slm, and the width of the deposition channel is 20-50mm.

10. The device according to claim 1, characterized in that The device further comprises a second transport component connected to the outlet flow channel.

11. The device according to claim 10, characterized in that The pressure control component is disposed between the outlet flow channel and the second transport component.

12. The device according to claim 1, characterized in that A support member is arranged in the deposition chamber, and the workpiece is installed in the deposition chamber through the support member, and the support member includes an ejector pin.

13. A vapor deposition method, applied to the device according to any one of claims 1 to 12, characterized in that: The method comprises: Determining temperature information and pressure information in the deposition chamber based on the target deposit; Acquiring target deposition parameters, wherein the target deposition parameters include target utilization and / or target uniformity; Based on the target deposition parameters, the temperature information and the pressure information, first parameter information of the raw material and second parameter information of a deposition channel are determined, and the deposition channel is a contoured channel.

14. The method according to claim 13, characterized in that The method further comprises: Acquiring historical sedimentary data related to the target sediment; Based on the historical deposition data, a first reference range and a second reference range are determined.

15. The method according to claim 14, characterized in that The second parameter information for determining the deposition flow path includes: In response to the target uniformity being greater than a preset threshold, determining that the deposition channel is a variable width channel, and the width of the deposition channel narrows from an inlet to an outlet; According to the second reference range, an inlet width and an outlet width of the deposition channel are determined.

16. The method according to claim 14, characterized in that The temperature information includes an allowable temperature range, and the first parameter information for determining the raw material and the second parameter information for the deposition channel include: Determining the distribution position of the deposition temperature within the allowable temperature range; The first parameter information and the second parameter information are determined according to the distribution position, the first reference range, and the second reference range.

Images