Multiple thermal CVD chambers with common gas delivery and exhaust system

Abstract

Methods and apparatus for a process chamber for thermal processing are described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first set of gas injection channels and a second set of gas injection channels. The chamber body may also include a first set of exhaust ports and a second set of exhaust ports. The processing chamber may have a common gas panel and / or a common exhaust conduit. The processing chambers described herein enable simultaneous processing of multiple substrates with improved process gas flow and heat distribution.

Description

[0001] This application is a divisional application of the invention patent application with application date of March 31, 2021, application number 202180016018.9, and invention name “Multiple thermal CVD chambers with a common gas delivery and exhaust system”. Technical Field

[0002] Embodiments described herein generally relate to dual thermal processing chambers. More particularly, embodiments described herein relate to dual epitaxial deposition chambers, where two processing chambers share one or more of a chamber body, a gas injection panel, or an exhaust channel. Background Art

[0003] Semiconductor substrates are processed for a wide variety of applications, including the manufacture of integrated devices and micro-devices. However, conventional hardware for processing substrates is relatively large, requiring the use of more space within a factory. Additionally, conventional hardware suffers from insufficient processing throughput.

[0004] Previous attempts to increase the number of substrates that can be epitaxially processed simultaneously have encountered problems with substrate surface temperature control or process gas flow control across the substrate surface. Furthermore, these conventional attempts are expensive and have a large footprint that occupies a large area within the workspace. Therefore, there is a need for an improved thermal processing chamber in semiconductor processing. Summary of the invention

[0005] The present disclosure generally relates to an apparatus for substrate processing. In one embodiment, the apparatus for substrate processing includes a dual chamber body. The dual chamber body includes a first processing space on a first side of a center plane and a second processing space on a second side of the center plane. An equalization port connects the first processing space and the second processing space. A first plurality of gas injection channels are formed through the dual chamber body and are in fluid communication with the first processing space, and a second plurality of gas injection channels are formed through the dual chamber body and are in fluid communication with the second processing space. A first exhaust port is formed in the dual chamber body opposite to the first plurality of gas injection channels. The first exhaust port is in fluid communication with the processing space. The second exhaust port is formed through the dual chamber body and is opposite to the second plurality of gas injection channels. The second exhaust port is in fluid communication with the second processing space. The apparatus also includes one or more upper window assemblies disposed on the dual chamber body. The first lower window is positioned adjacent to the first processing space, and the second lower window is positioned adjacent to the second processing space. A first substrate support is positioned in the first processing space, and a second substrate support is positioned in the second processing space. A first lower lamp assembly is positioned adjacent to the first lower window, and a second lower lamp assembly is positioned adjacent to the second lower window.

[0006] In another embodiment, a device for substrate processing includes a dual chamber body. The dual chamber body includes a first processing space formed by a first chamber on a first side of a reference plane, a second processing space formed by a second chamber on a second side of the reference plane, and a balance port connecting the first processing space and the second processing space. A first plurality of gas injection channels are in fluid communication with the first processing space, and a second plurality of gas injection channels are in fluid communication with the second processing space. A first exhaust port is formed in the dual chamber body opposite to the first plurality of gas injection channels, and the first exhaust port is in fluid communication with the processing space. A second exhaust port is formed in the dual chamber body opposite to the second plurality of gas injection channels, and the second exhaust port is in fluid communication with the processing space. The device for substrates also includes one or more upper window assemblies disposed on the dual chamber body.

[0007] The first lower window is positioned adjacent to the first processing space, and the second lower window is positioned adjacent to the second processing space.

[0008] The first substrate support is positioned in the first processing space, and the second substrate support is positioned in the second processing space.

[0009] The first lower lamp assembly is positioned adjacent to the first lower window, and the second lower lamp assembly is positioned adjacent to the second lower window.

[0010] In yet another embodiment, a dual chamber body includes a chamber body, a first processing space formed by the chamber body on a first side of a reference plane, and a second processing space formed by the chamber body on a second side of the reference plane. A first plurality of gas injection channels are in fluid communication with the first processing space, and a second plurality of gas injection channels are in fluid communication with the second processing space. A first exhaust port is formed in the dual chamber body opposite to the first plurality of gas injection channels, and the first exhaust port is in fluid communication with the processing space. A second exhaust port is formed in the dual chamber body opposite to the second plurality of gas injection channels, and the second exhaust port is in fluid communication with the processing space. An equalization port connects the first processing space and the second processing space. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to understand the above-mentioned features of the present disclosure in more detail, reference may be made to the embodiments for a more particular description of the present disclosure briefly summarized above, some of which are shown in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting in scope, as the present disclosure may admit to other equally effective embodiments.

[0012] Figure 1 A schematic cross-sectional view of a processing system according to one embodiment described herein is shown.

[0013] Figure 2 Shows Figure 1A plan view of a chamber body of a processing system.

[0014] Figure 3 Shows Figure 2 A partial cross-sectional side view of a portion of a chamber body.

[0015] Figure 4A The first embodiment described herein is shown Figure 2 A cross-sectional plan view of the chamber body.

[0016] Figure 4B The second embodiment described herein is shown Figure 2 A cross-sectional plan view of the chamber body.

[0017] Figure 4C The third embodiment described herein is shown Figure 2 A cross-sectional plan view of the chamber body.

[0018] Figure 4D The fourth embodiment described herein is shown Figure 2 A cross-sectional plan view of the chamber body.

[0019] Figure 5 Operations of a method for processing a substrate according to embodiments described herein are shown.

[0020] Figure 6 Shows the settings in Figures 1 to 3 FIG. 1 is a top plan view of a single upper window assembly above the chamber bodies of the first process chamber 101a and the second process chamber.

[0021] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0022] Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, and more specifically, to a thermal treatment system. The thermal treatment system is an epitaxial deposition system. The thermal treatment system includes a substrate support, one or more upper windows, one or more lower windows, multiple upper heating elements, multiple lower heating elements, an inner liner, a processing system body, one or more gas panels, and one or more vacuum pumps. In some embodiments that can be combined with other embodiments, the processing system body is a dual body, and the dual body includes two processing chambers formed therein. The two processing chambers can share a gas panel and / or an exhaust pump, such as a vacuum pump. The dual body enables the sharing of a gas panel and / or an exhaust pump. By sharing a gas panel and / or an exhaust pump, equipment costs are reduced, and the footprint of the system is similarly reduced. More specifically, the embodiments described herein relate to a dual body for epitaxial deposition processing.

[0023] Figure 1 A schematic cross-sectional view of a processing system 100 according to one embodiment described herein is shown. The processing system includes a first processing chamber 101a and a second processing chamber 101b. The first processing chamber 101a and the second processing chamber 101b are substantially identical to each other. The processing chambers 101a, 101b share a chamber body 130 and a chamber body bottom 134. The processing chambers 101a, 101b may additionally include a common lid (not shown). The processing chambers 101a, 101b are mirror images of each other about a center plane 103.

[0024] The first processing chamber 101a defines a first processing space 124 for processing a single substrate. The first processing chamber 101a includes a first upper window 116a, such as an arched structure, disposed between the first cover 104a and the first processing space 124. The first processing chamber 101a also includes a first lower window 118a disposed below the first processing space 124. There are a plurality of first upper radiation heat sources 106a above the first upper window 116a. The plurality of first upper radiation heat sources 106a are lamps, such as halogen lamps. The first upper radiation heat source 106a is disposed between the first upper window 116a and the first cover 104a. The first upper radiation heat source 106a is positioned to provide uniform heating of the substrate 155. There are a plurality of first lower radiation heat sources 138a below the first lower window 118a. The plurality of first lower radiation heat sources 138a are lamps, such as halogen lamps. The first lower radiation heat source 138a is disposed between the first lower window 118a and the bottom 134 of the chamber body. The first lower radiant heat source 138a is positioned to provide uniform heating of the substrate 155 .

[0025] The second processing chamber 101b defines a second processing space 126 for processing a single substrate. The second processing chamber 101b includes a second upper window 116b, such as an arched structure. The second upper window 116b is disposed between the second cover 104b and the second processing space 126. The second processing chamber 101b also includes a second lower window 118b, such as an arched structure disposed below the second processing space 126. There may be a plurality of second upper radiation heat sources 106b above the second upper window 116b. The plurality of second upper radiation heat sources 106b are lamps, such as halogen lamps. The second upper radiation heat source 106b is disposed between the second upper window 116b and the second cover 104b. The second upper radiation heat source 106b is positioned to provide a predetermined heating of the second upper window 116b. There are a plurality of second lower radiation heat sources 138b below the second lower window 118b. The plurality of second lower radiation heat sources 138b are lamps, such as halogen lamps. Second lower radiant heat source 138b is disposed between second lower window 118b and chamber body bottom 134. Second lower radiant heat source 138b is positioned to provide predetermined heating of second lower window 118b.

[0026] The first and second upper windows 116a, 116b and the first and second lower windows 118a, 118b can be transparent to infrared radiation (defined as transmitting at least 95% of infrared radiation). In some embodiments, the first and second upper windows 116a, 116b and the first and second lower windows 118a, 118b can be quartz materials. In some embodiments, the first upper window 116a and the second upper window 116b include an inner window 212 and an outer window support 214. The inner window 212 can be a thin quartz window and partially defines the processing space 124, 126. The outer window support 214 supports the inner window 212 and is at least partially disposed in the support groove 304 ( Figure 2 and Figure 3 ).

[0027] In some embodiments, the first upper window 116a and the second upper window 116b may be a single window, such that a single upper window assembly 600 ( Figure 6 ). The single upper window assembly 600 can help eliminate pressure gradients across the first processing chamber 101a and the second processing chamber 101b and reduce temperature gradients across the single upper window 616. The single upper window 616 also eliminates the need for a central wall (such as the central wall 132). Figure 6 The single upper window 616 is described in more detail in and accompanying text.

[0028] The processing system 100 also includes pedestal assemblies 150 and 152, which are respectively disposed in the first processing chamber 101a and the second processing chamber 101b. A liner 120 is disposed in each processing chamber of the first processing chamber 101a and the second processing chamber 101b and surrounds each pedestal assembly 150, 152. The pedestal assembly 150 is at least partially disposed in the first processing chamber 101a, and the pedestal assembly 152 is at least partially disposed in the second processing chamber 101b. The liner 120 isolates the chamber body 130 from the processing chemicals in the first and second processing spaces 124, 126. Each of the first processing chamber 101a and the second processing chamber 101b includes a liner 120. The chamber body 130 is disposed between the upper window 116 and the lower window 118. The liner 120 is disposed in the first processing chamber 101a and the second processing chamber 101b. Each liner 120 is disposed between one of the processing spaces 124, 126 and the chamber body 130. The exhaust chamber 170 partially surrounds the processing spaces 124, 126, and one or more exhaust ports 172a, 172b connecting the exhaust chamber 170 and the processing spaces 124, 126 are formed through the liner 120.

[0029] The first processing chamber 101a and the second processing chamber 101b share a gas panel 108 and a vacuum pump 110. The gas panel 108 can be two separate gas panels or a common gas panel. When the common gas panel 108 is used, the first processing chamber 101a and the second processing chamber 101b are both provided with gas by the same gas panel 108. The gas panel 108 provides the processing gas to the first and second processing spaces 124, 126 through the conduit 123 and the first and second gas injection channels 182a, 182b. The gas panel 108 evenly distributes the gas between the first processing space 124 and the second processing space 126. The gas panel 108 is connected to the conduit 123. The conduit 123 is divided into two other conduits 127a, 127b. The conduit 123 may include a shunt controller. The shunt controller is arranged between the conduit 123 and the conduits 127a, 127b. The shunt controller controls the gas flow to each conduit 127a, 127b. In some embodiments, the flow divider controller includes a valve or a mass flow controller. Two additional conduits 127a, 127b distribute gas from the conduit 123 to the first and second gas injection channels 182a, 182b, respectively. The conduits 127a, 127b have flow restrictors 121a, 121b disposed therein. The flow restrictors 121a, 121b control the flow of the process gas through the conduits 127a, 127b. The flow restrictors 121a, 121b can additionally measure the flow of the process gas through the conduits 127a, 127b. The flow restrictors 121a, 121b control the flow of the process gas flowing out of the gas panel 108 and balance the flow of the process gas so that the flow of the process gas in the two conduits 127a, 127b is the same. The flow restrictors 121a, 121b can be, for example, valves, mass flow controllers or other flow limiting devices. The flow restrictors 121a, 121b may be used in addition to or in place of a precision flow split controller (not shown) coupled to the conduit 123. Gases that may be supplied by the gas panel 108 include process gases, such as purge gases, cleaning gases, and deposition gases.

[0030] The first process chamber 101a and the second process chamber 101b further include a first separate gas panel 115 and a second separate gas panel 117. The first separate gas panel 115 provides a process gas to the first process space 124 through a first gas injection channel 182a. The second separate gas panel 117 provides a process gas to the second process space 126 through a second gas injection channel 182b. If the restrictors 121a, 121b cannot properly balance the process gas flow from the common gas panel 108, or if supplementary gas is used for a specific process, the first and second separate gas panels 115, 117 are used. Gases that may be supplied by the first separate gas panel 115 and the second separate gas panel 117 include deposition gas and carrier gas.

[0031] In some embodiments, both the common gas panel 108 and the first and second individual gas panels 115, 117 are utilized. In other embodiments, only the common gas panel 108 is utilized. In yet another embodiment, both the first and second individual gas panels 115, 117 are utilized. In embodiments where the common gas panel 108 provides at least some of the process gases, the cost of the gas injection system can be reduced.

[0032] The first processing chamber 101a is coupled to the gas panel 108 via the first gas injection channel 182a. The first gas injection channel 182a is in fluid communication with the first processing space 124, such that the first gas injection channel 182a provides processing gas from the gas panel 108 to the first processing space 124.

[0033] The process gas supplied from the gas panel 108 is introduced into the first processing space 124 through the first gas injection channel 182a formed in the side wall of the chamber body 130, so that the gas panel 108 is a process gas panel. The first gas injection channel 182a is configured to guide the process gas toward the susceptor assembly 150 in a generally radially inward direction. Thus, in some embodiments, the first gas injection channel 182a can be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the process gas through the surface of the substrate 155 and / or the support surface 154. During the film formation process, the support surface 154 is located at a processing position (adjacent to the first gas injection channel 182a and at about the same height as the first gas injection channel 182a), thereby allowing the process gas to flow across the upper surface of the substrate 155 and / or the support surface 154 generally along the flow path 205. The process gas exits the first processing space 124 through the first exhaust port 172a, which is located on a side of the first processing space 124 opposite the first gas injection channel 182a. The removal of the process gas through the first exhaust port 172a may be facilitated by the vacuum pump 110.

[0034] The gas panel 108 is attached to the second gas injection channel 182 b . The second gas injection channel 182 b is in fluid communication with the second process space 126 , such that the second gas injection channel 182 b provides process gas from the gas panel 108 to the second process space 126 .

[0035] The process gas supplied from the gas panel 108 is introduced into the second processing space 126 through the second gas injection channel 182b formed in the side wall of the chamber body 130. The second gas injection channel 182b is configured to guide the process gas in a direction generally radially inward. Thus, in some embodiments, the second gas injection channel 182b can be a cross-flow gas injector. The cross-flow gas injector is positioned to guide the process gas through the surface of the substrate 155 and / or the support surface 154. During the film formation process, the support surface 154 is located at a processing position (adjacent to the second gas injection channel 182b and at a height approximately the same as the second gas injection channel 182b), thereby allowing the process gas to flow across the upper surface of the substrate 155 and / or the support surface 154 generally along the flow path 205. The process gas leaves the second processing space 126 through the second exhaust port 172b, which is located on the side of the first processing space 126 opposite to the second gas injection channel 182b. The removal of the process gas through the second exhaust port 172 b may be facilitated by the vacuum pump 110 .

[0036] The purge gas supplied from the purge gas source 185 is introduced into the bottom area 105 of the first and second process spaces 124 and 126 through first and second purge gas inlets 184 a and 184 b formed in the sidewall of the chamber body 130 .

[0037] The purge gas source 185 is in fluid communication with the conduit 125. The conduit 125 transmits the purge gas from the purge gas source 185. The conduit 125 is divided into two other conduits 129a, 129b. The conduits 129a, 129b connect the conduit 125 to the first and second purge gas inlets 184a, 184b. The purge gas source 185 is in fluid communication with the first and second purge gas inlets 184a, 184b through the conduit 125 and the conduits 129a, 129b. The first purge gas inlet 184a is in fluid communication with the conduit 129a, and the second purge gas inlet 184b is in fluid communication with the conduit 129b. The first and second purge gas restrictors 119a, 119b are used to balance the purge gas flow through the conduits 129a, 129b. The first purge gas restrictor 119a and the second purge gas restrictor 119b balance the flow so that the flow through each conduit 129a, 129b is the same.

[0038] The first purge gas inlet 184a is disposed at a height below the first gas injection channel 182a. If a liner 120 is used, the liner 120 may be disposed between the first gas injection channel 182a and the first purge gas inlet 184a. In either case, the first purge gas inlet 184a is configured to guide the purge gas in a generally radially inward direction. The first purge gas inlet 184a may be configured to guide the purge gas in an upward direction. During the film formation process, the susceptor assembly 152 is located in such a position that the purge gas flows generally along the flow path 210 over the back side of the support surface 154. The purge gas leaves the bottom region 105 and exits the processing chamber through the first exhaust port 172a, which is located on the side of the first processing space 101a opposite to the first purge gas inlet 184a.

[0039] The second purge gas inlet 184b is disposed at a height below the second gas injection channel 182b. If a liner 120 is used, a portion of the liner 120 may be disposed between the second gas injection channel 182b and the second purge gas inlet 184b. In either case, the second purge gas inlet 184b is configured to guide the purge gas in a generally radially inward direction. The second purge gas inlet 184b may be configured to guide the purge gas in an upward direction. During the film formation process, the susceptor assembly 152 is located in such a position that the purge gas flows generally along the flow path 210 over the back of the support surface 154. The purge gas leaves the bottom region 105 and exits the processing chamber through the second exhaust port 172b, which is located on the side of the second processing space 101b opposite to the second purge gas inlet 184b.

[0040] The vacuum pump 110 is in fluid communication with the exhaust chamber 170 so that the processing spaces 124, 126 can be evacuated through the plurality of exhaust ports 172a, 172b and the exhaust chamber 170. The exhaust chamber 170 is coupled to a common exhaust conduit 171. The common exhaust conduit 171 is connected to an exhaust outlet pipe 128, which extends through the chamber body bottom 134 to a pump conduit 174. The pump conduit 174 is coupled to the vacuum pump 110 to facilitate pumping of gas from the common exhaust conduit 171. A common exhaust valve 173 is disposed on the pump conduit 174 between the common exhaust conduit 171 and the vacuum pump 110. The common exhaust valve 173 can be opened or closed according to a desired pumping operation.

[0041] The support surface 154 of the pedestal assembly 150, 152 is disposed within the processing volume 124, 126. The support surface 154 is generally the top of the pedestal assembly 150, 152 configured to support the substrate during processing. The bottom region 105 of the chamber 101a, 101b is defined between the chamber body bottom 134 and the support surface 154 of the pedestal assembly 150, 152. Each pedestal assembly 150, 152 has a rod 156 extending from the bottom surface of each pedestal assembly 150, 152 through the bottom 134 of the chamber body 130. The rod 156 is coupled to a corresponding motor 164, which is configured to independently raise, lower and / or rotate each pedestal assembly 150, 152.

[0042] Base bellows ports 160 are formed in the bottom 134 of the chamber body 130. The base bellows ports 160 extend through the bottom 134 of the chamber body 130. Each base bellows port 160 has a diameter greater than the diameter of the rods 156 and circumscribes each rod 156 at the location where the rod 156 extends through the bottom 134 of the chamber body 130. The base bellows ports 160 circumferentially surround the rods 156.

[0043] A bellows assembly 158 is disposed around each base bellows port 160 to prevent vacuum leakage to the outside of the chamber body 130. Each bellows assembly 158 circumscribes and surrounds a portion of one of the rods 156 disposed outside the chamber body 130. The bellows assembly 158 is coupled between the outer surface of the bottom 134 of the chamber body 130 and a base member 180. The base member 180 may house the motor 164 and a portion of the rod 156 coupled to the motor 164.

[0044] The bellows assembly 158 may be formed of a metal or metallized material and may be configured to form an airflow channel 162. The airflow channel 162 is defined as the area between the stem 156 and the bellows assembly 158. The airflow channel 162 extends from the base bellows port 160 to the base member 180. In this way, the airflow channel 162 forms a hollow cylindrical channel between the bellows assembly 158 and the stem 156. The airflow channel 162 is fluidly coupled between the bottom region 105 and the exhaust conduit 178. The exhaust conduit 178 extends from the airflow channel 162 through the base member 180 to the pump conduit 174. A valve 179 is disposed on the exhaust conduit 178 between the airflow channel 162 and the pump conduit 174. When the valve 179 is closed, pumping through the exhaust chamber 170 may be performed, and when the valve 179 is opened, pumping through the base bellows port 160 may be performed. When valve 179 is open, common exhaust valve 173 may be closed to enhance pumping of bottom region 105 via base bellows port 160 .

[0045] In one embodiment of the pumping process, the bottom region 105 of each chamber 101a, 101b is pumped via the base bellows port 160. Gases and particles present in the bottom region 105 travel through the base bellows port 160, the gas flow channel 162, and the exhaust conduit 178 to the vacuum pump 110. In this embodiment, the common exhaust valve 173 is closed and the valve 179 is open so that the pump is in fluid communication with the bottom region 105. The pumping via the base bellows port 160 is performed during the chamber cleaning process, such as when the chamber is idle and not processing substrates. During the base bellows pumping process, an inert gas can also be provided to the chambers 101a, 101b. For example, for each chamber 101a, 101b, argon gas is provided to both chambers 101a, 101b from one of the gas panels 108 or the purge gas source 185. It is believed that the argon gas provided via the gas panel 108 or the purge gas source 185 enables more efficient cleaning and pumping of the bottom region 105 .

[0046] In one embodiment, a gas source 168 is fluidly coupled to each bottom region 105 via the gas flow channel 162 and the base bellows port 160. The gas source 168 can be configured to deliver an inert gas or a cleaning gas to the bottom region 105. Although schematically shown as being physically close to the system 100, the gas source 168 is typically a remote gas source located away from the system 100. The gas source 168 is coupled to a conduit 176 that extends from the gas source 168 through the base member 180. The conduit 176 is in fluid communication with the gas flow channel 162. A valve 177 is disposed on the conduit 176 between the gas source 168 and the base member 180.

[0047] In one embodiment, an inert gas or purge gas is provided to the bottom region 105. In operation, the purge gas is provided to the bottom region 105 along a flow path from the gas source 168 through the conduit 176 with the valve 177 in an open state, the gas flow channel 162, and the susceptor bellows port 160. During substrate processing in the chambers 101a, 101b, the purge gas is provided from the gas source 168. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases may also be used.

[0048] It is believed that flowing the purge gas during processing of the substrate prevents particles and contaminants from falling below the support surface 154 and being deposited on the surfaces of the chambers 101a, 101b defining the bottom region 105. During purging through the susceptor bellows port 160, pumping of the chambers 101a, 101b is performed through the exhaust chamber 170 and the vacuum pump 110. The plurality of exhaust ports 172 and at least a portion of the exhaust chamber 170 are substantially coplanar with the support surface 154. The purge gas is drawn from the bottom region 105 via the pumping of the exhaust chamber 170. In this embodiment, the purge gas and contaminants are exhausted from the chambers 101a, 101b without the contaminants falling below the support surface 154. However, it is contemplated that the pumping and purging through the bellows assembly 158 may be omitted. In such an example, the corresponding hardware for pumping and purging through the bellows assembly 158 may also be omitted.

[0049] The system 100 also includes an equalization port 140, which is disposed through the central wall 132 of the system. The central wall 132 separates the chambers 101a, 101b and defines at least a portion of the bottom region 105. The equalization port 140 includes a first opening 140a in fluid communication with the bottom region 105 of the first processing chamber 101a. The equalization port 140 also includes a second opening 140b in fluid communication with the bottom region 105 of the second processing chamber 101b. Each of the first opening 140a and the second opening 140b is disposed on opposite sides of the equalization port 140 and is in fluid communication with each other. The equalization port 140 may be formed in the central wall 132 or through an area of ​​the chamber body 130 that defines the bottom region 105. The equalization port 140 is disposed below the support surface 154 and the exhaust chamber 170. An equalization port 140 extends from the bottom region 105 of each chamber 101a, 101b through the central wall 132 and places the bottom region 105 of each chamber 101a, 101b in fluid communication with each other.

[0050] A conduit 144 extends from the equalization port 140 through the central wall 132 and exits the bottom 134 of the chamber body 130 at the outlet 142. The conduit 144 fluidly couples the equalization port 140 with the exhaust conduit 178. A valve 143 is disposed on the conduit 144 between the outlet 142 and the exhaust conduit 178. Thus, when the valve 143 is open, the bottom region 105 is in fluid communication with the vacuum pump 110.

[0051] In one example, the bottom region 105 is evacuated by a pumping process of the equalization port 140. The pumping process of the equalization port 140 is performed when the chamber is idle (e.g., during an idle cleaning process). To enable pumping via the equalization port 140, the exhaust valve 173 is closed and the valve 143 is opened. In this way, the vacuum pump 110 is in fluid communication with the bottom region 105 via the conduit 144 and the equalization port 140. Since the exhaust valve 173 is closed, the exhaust of the chambers 101a, 101b is performed via the equalization port 140 instead of via the exhaust chamber 170.

[0052] During the pumping process of the equalization port 140, the vacuum pump 110 exhausts gases and contaminants from the bottom region 105 through the equalization port 140 and the conduit 144. During the pumping process of the equalization port 140, an inert gas can also be provided to the chambers 101a, 101b. For example, argon gas is provided to both chambers 101a, 101b from the gas panel 108. It is believed that the argon gas provided via the gas panel 108 enables more efficient cleaning and pumping of the bottom region 105. Pumping via the equalization port 140 removes unwanted contaminants from the bottom region 105 without utilizing the exhaust chamber 170, which provides increased functionality of the system 100.

[0053] Additionally, the equalization port 140 equalizes the pressure between each chamber 101a, 101b during substrate processing. Equalizing the pressure within the chambers 101a, 101b allows for more consistent deposition results between processed substrates in each chamber 101a, 101b.

[0054] In one embodiment, a gas source 148 is fluidly coupled to the bottom region 105 via a conduit 144 and an equalization port 140. The gas source 148 may be configured to deliver an inert gas or a cleaning gas to the bottom region 105. Although schematically shown as being physically close to the system 100, the gas source 148 is typically a remote gas source located away from the system 100. The gas source 148 is coupled to a conduit 146 that extends from the gas source 148 to the conduit 144. A valve 145 is disposed on the conduit 146 between the gas source 148 and the conduit 144.

[0055] In one embodiment, an inert gas or purge gas is provided to the bottom region 105. In operation, the purge gas is provided to the bottom region 105 along a flow path from a gas source 148 through a conduit 146 with an open valve 145, a conduit 144, and an equalization port 140. In an idle cleaning process, the purge gas is provided from a gas source 148. Suitable purge gases include inert gases such as helium, neon, and argon. However, other non-reactive gases may also be used.

[0056] The opening 136 is formed through each of the first processing chamber 101a and the second processing chamber 101b. The opening 136 can be used to transfer the substrate into and out of the first processing space 124 and the second processing space 126. In some embodiments, the opening 136 is a slit valve. In other embodiments, the opening 136 can be connected to any suitable valve that allows the substrate 155 to pass through.

[0057] In one embodiment, each of the first processing chamber 101a and the second processing chamber 101b may further include one or more temperature sensors 201, such as optical pyrometers, which measure the temperature within the first processing chamber 101a and the second processing chamber 101b and on the surface of the substrate 155. The one or more temperature sensors 201 are disposed on the first cover 104a and the second cover 104b. One or more high-energy radiation source assemblies 202, such as focused high-energy radiation source assemblies, such as laser source assemblies, may be disposed on the first cover 104a and the second cover 104b. The one or more high-energy radiation source assemblies 202 may generate one or more high-energy radiation beams to locally heat the substrate 155. The one or more high-energy radiation source assemblies 202 may be one or more spot heater assemblies.

[0058] Figure 2 Shows Figure 1 1. A plan view of a chamber body 130 of a processing system of FIG. The chamber body 130 includes two body portions 415a, 415b, two interface surfaces 308, two inlet portions 310, an upper ring assembly 320, a lower ring assembly 318, and a first exhaust port 172a and a second exhaust port 172b. The chamber body 130 surrounds a first processing chamber 101a and a second processing chamber 101b.

[0059] Each of the first processing chamber 101a and the second processing chamber 101b (shown in FIG. Figure 1 103) forms a first half 326 and a second half 328 of the chamber body 130. The first half 326 of the chamber body 130 defines a first body portion 415a. The second half 328 of the chamber body 130 defines a second body portion 415b. The first half 326 and the second half 328 of the chamber body 130 are disposed on opposite sides of the center plane 103. The center plane 103 bisects the chamber body 130 such that the first half 326 of the chamber body 130 is a mirror image of the second half 328 of the chamber body 130.

[0060] The upper ring assembly 320 is the upper part of the chamber body 130. The upper ring assembly 320 at least partially surrounds the first processing space 124 and the second processing space 126. The upper ring assembly 320 can be a continuous body with a single piece, or it can be a plurality of parts fastened together. In the embodiment where the upper ring assembly 320 is a continuous body, the upper ring assembly 320 is described as an integral upper assembly. The integral assembly for the upper ring assembly 320 is used to ensure that each of the first processing chamber 101a and the second processing chamber 101b is arranged in the same vertical position. The use of the integral upper ring assembly 320 also ensures that the equalization port 140 makes the first processing space 124 and the second processing space 126 fluidly connected to each other without having to manage the potential misalignment or sealing damage between the first body part 415a and the second body part 415b. The upper ring assembly 320 includes an inlet portion 310, a gas channel 312, a first chamber 235, a second chamber 240, a first chamber wall 302 and a second chamber wall 303. The first cavity wall 302 of the first cavity 235 is the outer wall of the first cavity 235. The second cavity wall 303 of the second cavity 240 is the outer wall of the second cavity 240.

[0061] Each of the first half 326 and the second half 328 includes an interface surface 308. The interface surface 308 includes an opening 136 for transferring the substrate 155 into and out of the first process chamber 101a and the second process chamber 101b. The interface surface 308 can be connected to another set of process chambers, a factory interface, or a transfer chamber (not shown). The interface surface 308 is a flanged surface provided from the first process chamber 101a and the second process chamber 101b.

[0062] Each of the first half 326 and the second half 328 also includes an inlet portion 310. The inlet portion 310 is a portion of the upper ring assembly 320. The inlet portion 310 is a portion of the upper ring assembly 320 in which the gas passage 312 is formed. The inlet portion 310 can be a continuous portion of the upper ring assembly 320, or can be separable from the upper ring assembly 320. The inlet portion 310 extends outwardly from the sidewall 225 of the upper ring assembly 320. The sidewall 225 is a portion of the outer surface 230 of the upper ring assembly 320.

[0063] The gas channel 312 is in fluid communication with the gas panel 108 and the purge gas source 185. The gas channel 312 may be a plurality of separate gas channels 312. Each of the plurality of gas channels 312 is used to allow one or more process gases to flow into the first processing space 124 and the second processing space 126 through the first injection channel 182a and the second injection channel 182b. In an exemplary embodiment that may be combined with other embodiments, the gas channel 312 is formed as an inlet portion 310 passing through the first body portion 415a and the second body portion 415b. The gas channel 312 is fluidly connected to the first injection channel 182a. The first injection channel 182a is in fluid communication with the first processing space 124. In this embodiment, there is an additional gas channel 312 formed through the inlet portion of the second body portion 415b. The gas channel 312 formed through the inlet portion 310 of the second body portion 415b is fluidly connected to the second injection channel 182b. The second injection channel 182b is in fluid communication with the second processing space 126. The gas channel 312 may include a plurality of gas channels 312 , for example, four or more gas channels 312 , five or more gas channels 312 , six or more gas channels 312 , eight or more gas channels 312 , 10 or more gas channels 312 , or 12 or more gas channels 312 .

[0064] The lower ring assembly 318 is disposed below the upper ring assembly 320. The lower ring assembly 318 is the lower portion of the chamber body 130 (shown in FIG. Figure 1 ). The lower ring assembly 318 at least partially surrounds the first processing space 124 and the second processing space 126. The lower ring assembly 318 can be a continuous body with a single piece, or it can be a plurality of parts fastened together. In an embodiment where the lower ring assembly 318 is a continuous body, the lower ring assembly 318 can be described as an integral lower ring assembly. The integral lower ring assembly for the lower ring assembly 318 ensures that each of the first processing chamber 101a and the second processing chamber 101b is located in the same vertical position. The use of the integral lower ring assembly 318 also ensures that the equalization port 140 makes the first processing space 124 and the second processing space 126 fluidly connected to each other without having to manage the potential misalignment or sealing damage between the first processing chamber 101a and the second processing chamber 101b. The lower ring assembly 318 includes first and second exhaust ports 172a, 172b, the first chamber 235, the second chamber 240, the first chamber wall 302 and the second chamber wall 303. The first chamber wall 302 of the first chamber 235 is the outer wall of the first chamber 235. The second chamber wall 303 of the second chamber 240 is an outer wall of the second chamber 240. The equalization port 140 is disposed between each of the first and second processing chambers 101a and 101b through the lower ring assembly 318. Alternatively, the equalization port 140 is disposed through the upper ring assembly 320.

[0065] The first exhaust port 172a and the second exhaust port 172b may be disposed on a side of the chamber body 130 opposite to the first injection channel 182a and the second injection channel 182b (e.g., approximately 180 degrees) to promote a cross-flow pattern. The first exhaust port 172a and the second exhaust port 172b may be formed in the lower ring assembly 318, so that the first exhaust port 172a and the second exhaust port 172b are disposed vertically below the first gas injection channel 182a and the second gas injection channel 182b. The first exhaust port 172a is disposed opposite to the first injection channel 182a, and the second exhaust port 172b is disposed opposite to the second injection channel 182b. The positioning of the first exhaust port 172a allows the gas from the first injection channel 182a to flow horizontally in the first processing space 124. The positioning of the second exhaust port 172b allows the gas from the second injection channel 182b to flow horizontally in the second processing space 126. The first and second exhaust ports 172 a , 172 b extend from the first and second chamber walls 302 , 303 to the outer surface 245 of the lower ring assembly 318 .

[0066] A support groove 304 is provided in each of the first body portion 415a and the second body portion 415b, adjacent to the first cavity wall 302 and the second cavity wall 303. The support groove 304 is a lip extending around the diameter of the first cavity wall 302 and the second cavity wall 303. The support groove 304 can be shaped to receive and support the edges (such as the edges of the first and second upper windows 116a, 116b) of the first and second upper windows 116a, 116b. Figure 1 ). The support groove 304 may be a groove that is vertically offset from the top surface 306 of the upper ring assembly 320 and is lower than the rest of the top surface 306.

[0067] In some embodiments, the chamber body 130 is divided into a first side 322 and a second side 324. The first side 322 and the second side 324 are on opposite sides of a reference plane 107. The reference plane is a longitudinal axis of the chamber body 130. The reference plane 107 is perpendicular to the center plane 103. The reference plane 107 divides the chamber body 130 such that the first side 322 of the chamber body 130 is on one side of the reference plane 107, and the second side 324 of the chamber body 130 is on the opposite side of the reference plane 107 from the first side 322. The first body portion 415a is the first side 322 of the chamber body 130, and the second body portion 415b is the second side 324 of the chamber body 130. In an exemplary embodiment, the interface surface 308, the inlet portion 310, and the gas channel 312 are all in the first side 322, while the first exhaust port 172a and the second exhaust port 172b are in the second side 324. In other embodiments, the interface surface 308 is in a first side, and the inlet portion 310 , the gas passage 312 , and the first and second exhaust ports 172 a , 172 b are split between the first and second sides 322 , 324 .

[0068] The first cavity 235 and the second cavity 240 are separated by a minimum distance 381. The minimum distance 381 is the minimum distance between the first cavity wall 302 and the second cavity wall 303. The minimum distance can be the minimum width of the center wall 132. Depending on the embodiment used, the minimum distance 381 varies, so that the thickness of the center wall 132 varies. In the embodiment where the first upper window 116a and the second upper window 116b are separated, the minimum distance 381 is greater than zero millimeters, for example, greater than one millimeter thick. In the embodiment where the first upper window 116a and the second upper window 116b are separated by a single upper window 616 ( Figure 6 ), the minimum distance 381 may be negligible such that the minimum distance 381 is zero millimeters thick and the center wall 132 has an opening formed through the center wall 132. In this embodiment, the equalization port 140 may not be formed through the center wall 132. In some embodiments, when the minimum distance 381 is reduced to zero millimeters and the minimum width of the center wall 132 is zero millimeters, the first cavity 235 and the second cavity 240 are still separated by the air curtain or a portion of the liner 120 disposed between the first cavity 235 and the second cavity 240.

[0069] Figure 3 Shows Figure 2 1 is a cross-sectional side view of a portion of chamber body 130. Figure 3 The portion of the chamber body 130 shown is the second half 328 of the chamber body 130. The first half 326 is similar to the second half 328. The second purge gas inlet 184b, second gas injection channel 182b, support groove 304, and opening 136 of the second process chamber 101b can also represent the first side and the first purge gas inlet 184a, first gas injection 182a, support groove 304, and opening 136 of the first process chamber 101a. The chamber body 130 includes an upper ring assembly 320 and a lower ring assembly 318.

[0070] Figure 3The relationship between the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the opening 136 is shown. The first and second gas injection channels 182a, 182b and the first and second purge gas inlets 184a, 184b are disposed in the upper ring assembly 320. The first and second gas injection channels 182a, 182b are disposed above the first and second purge gas inlets 184a, 184b. In some embodiments, each of the first and second gas injection channels 182a, 182b may have at least 4, such as 5 or more first and second gas injection channels 182a, 182b, such as 6 or more first and second gas injection channels 182a, 182b, such as 8 or more first and second gas injection channels 182a, 182b, such as 10 or more first and second gas injection channels 182a, 182b, such as 12 or more first and second gas injection channels 182a, 182b. In a similar embodiment, each of the first and second purge gas inlets 184a, 184b may have at least 4 (e.g., 5 or more) first and second purge gas inlets 184a, 184b, such as 6 or more first and second purge gas inlets 184a, 184b, such as 8 or more first and second purge gas inlets 184a, 184b, such as 10 or more first and second purge gas inlets 184a, 184b, such as 12 or more first and second purge gas inlets 184a, 184b. Each of the first and second gas injection channels 182a, 182b and each of the first and second purge gas inlets 184a, 184b are parallel to each other. The first and second gas injection channels 182a, 182b and the first and second purge gas inlets 184a, 184b are spaced apart along the inner walls of the first and second processing chambers 101a, 101b.

[0071] The opening 136 is below the second gas injection channel 182b and the second purge gas inlet 184b. Figure 1 As described, the size and position of the opening 136 are configured to allow the substrate 155 to pass therethrough. The opening 136 can be closed using a valve. In some embodiments, the opening 136 is directly disposed below the second gas injection channel 182b and the second purge gas inlet 184b. Alternatively, the opening 136 is disposed adjacent to the second gas injection channel 182b and the second purge gas inlet 184b but offset at an angle. FIG. 4B to FIG. 4D and the accompanying description describe that the opening 136 will be in place of Figure 3The support groove 304 is above the second gas injection channel 182b and the second purge gas inlet 184b. Figure 4A As shown, the first exhaust port 172a and the second exhaust port 172b are arranged to be opposite to the first gas injection channel 182a and the second gas injection channel 182b. The first exhaust port 172a and the second exhaust port 172b include a plurality of exhaust ports, so that each of the first exhaust port 172a and the second exhaust port 172b has at least two exhaust ports, such as three or more exhaust ports, such as four or more exhaust ports, such as five or more exhaust ports.

[0072] Figure 4A A chamber body 430a (similar to the chamber body according to the first embodiment described herein) is shown. Figure 2 The cross-sectional view of the chamber body 430a shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. Figure 4A The chamber body 430 a also includes an equalization port 140 .

[0073] The gas injection chord length 404 is the chord length of the gas injection channel from one end of the first gas injection channel 182a or the second gas injection channel 182b to the gas injection channel on the opposite end of the first gas injection channel 182a or the second gas injection channel 182b. The gas injection channel used to define the gas injection chord length 404 is the gas injection channel at the opposite extreme ends of the first gas injection channel 182a and the second gas injection channel 182b. The gas injection chord length 404 described herein is less than 500mm, such as less than 450mm, such as less than 400mm. The gas injection chord length 404 is greater than 150mm, such as greater than 200mm. The gas injection chord length 404 is configured to allow the process gas to flow over the entire surface of the substrate.

[0074] The exhaust port chord length 406 is the chord length from the exhaust port outer edge at one end of the first exhaust port 172a or the second exhaust port 172b to the exhaust port edge at the opposite end of the first exhaust port 172a or the second exhaust port 172b. The exhaust ports used to define the exhaust port chord length 406 are exhaust ports at opposite extreme ends of the first exhaust port 172a and the second exhaust port 172b. The exhaust port chord length 406 is less than 500 mm, such as less than 450 mm, such as less than 400 mm. The exhaust port chord length 406 is greater than 150 mm, such as greater than 200 mm.

[0075] Gas injection chord length 404 may be similar to exhaust port chord length 406. In some embodiments, gas injection chord length 404 may be less than or within about 10% of exhaust port chord length 406, such as less than or within about 5%, or less than or greater than 1%.

[0076] exist Figure 4A In an embodiment of the present invention, all first and second gas injection channels 182a, 182b, first and second purge gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b are positioned parallel to each other. The opening 136 in the chamber body 430a is positioned parallel to all first and second gas injection channels 182a, 182b, first and second purge gas inlets 184a, 184b, and first and second exhaust ports 172a, 172b. The opening 136 of the first body portion 415a is disposed directly below the first gas injection channel 182a. The opening 136 of the second body portion 415b is disposed directly below the second gas injection channel 182b.

[0077] The equalization port 140 is disposed between the first body portion 415a and the second body portion 415b. The equalization port 140 connects the first processing space 124 and the second processing space 126 to each other.

[0078] The process gas flow path 408 of the process gas traverses the first process space 124 and is introduced from the first gas injection channel 182a or the first purge gas inlet 184a ( Figure 1 The process gas flow path 408 also traverses the second process space 126 and flows from the second gas injection channel 182b or the second purge gas inlet 184b ( Figure 1 As shown) travels to the second exhaust port 172b. Figure 4A Although shown as a curve in FIG. 4 , the process gas flow path 408 is preferably a straight line and flows through the substrate 155 within each of the first process volume 124 and the second process volume 126 .

[0079] Each of the first gas injection channel 182a and the second gas injection channel 182b and the first exhaust port 172a and the second exhaust port 172b is bisected by the first flow path plane 410a. One of the first flow path planes 410a extends through the first body portion 415a and the second body portion 415b. The first flow path plane 410a is parallel to the flow of the process gas from the first and second gas injection channels 182a, 182b to the first and second exhaust ports 172a, 172b. The first flow path plane 410a is perpendicular to the reference plane 107 (e.g., perpendicular to the longitudinal axis of the chamber body 430), and thus forms an angle α of 90 degrees between the first flow path plane 410a and the reference plane 107. However, it is conceivable that the angle α can deviate from 90 degrees so that the first flow path plane 410a and the reference plane 107 are not perpendicular. In some exemplary embodiments, the angle α is about 80 degrees to about 100 degrees, for example, about 85 degrees to about 95 degrees.

[0080] Figure 4A The embodiment enables the use of a common gas panel (e.g., gas panel 108) and a common exhaust device (e.g., common exhaust duct 171) (see Figure 1 ). Using a common gas panel and a common exhaust reduces the cost of the system, but still enables high precision in heating and process gas flow within the first process volume 124 and the second process volume 126. The orientation of the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b provides for utilization of space for a common gas panel and a common exhaust panel.

[0081] Figure 4B FIG. 4 is a cross-sectional plan view of a chamber body 430 b according to a second embodiment described herein, which can be substituted for a chamber body 430 b. Figure 2 The chamber body 130. Figure 4B In the second embodiment described in , the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned parallel to the reference plane 107. The cross-sectional view of the chamber body 430b shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. Figure 4A The chamber body 430 b also includes an equalization port 140 .

[0082] exist Figure 4BIn the exemplary embodiment of the present invention, all of the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned parallel to each other and coincide with each other (e.g., parallel to the longitudinal axis of the chamber body 430). The positions of the openings 136 in the first and second body portions 415a, 415b are perpendicular to all of the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b. The openings 136 of the first process chamber 101a are between the positions of the first gas injection channels 182a and the first exhaust ports 172a. The openings 136 of the second process chamber 101b are located between the positions of the second gas injection channels 182b and the second exhaust ports 172b.

[0083] The equalizing port 140 is disposed between the first body portion 415a and the second body portion 415b. Figure 4B In the embodiment described in , the equalization port 140 is consistent with the first and second gas injection passages 182a, 182b. The equalization port 140 is below the first and second gas injection passages 182a, 182b and connects the first and second processing spaces 124, 126 to each other.

[0084] Figure 4B The gas injection chord length 404 and the exhaust port chord length 406 are Figure 4A The gas injection chord length 404 and the exhaust chord length 406 are defined in the same manner. Figure 4A The process gas flow path 408 is defined in the same manner as Figure 4B The process gas flow path 408. Figure 4B In the embodiment disclosed in FIG. 4 , the process gas flow path 408 diverges from the central wall 132 of the chamber body 430 and moves toward the outer edge of the chamber body 430. The process gas flowing from the first gas injection channel 182a flows to the first exhaust port 172a, and the process gas flowing from the second gas injection channel 182b flows to the second exhaust port 172b.

[0085] and Figure 4A As in the embodiment, the first and second gas injection passages 182a, 182b and the first and second exhaust ports 172a, 172b are divided into two by the second flow path plane 410b. The second flow path plane 410b extends through the first body portion 415a and the second body portion 415b. Figure 4BIn an embodiment, the second flow path plane 410b is coplanar or forms a single plane through the chamber body 430. The second flow path plane 410b is parallel to the flow of process gas from the first and second gas injection channels 182a, 182b to the first and second exhaust ports 172a, 172b. Figure 4B In the embodiment of the present invention, the second flow path plane 410b is parallel to the reference plane 107. The second flow path plane 410b and the reference plane 107 form an angle α. Figure 4B In the embodiment described in , the angle α is about 0 degrees. In some exemplary embodiments, the angle α deviates from 0 degrees and is about -10 degrees to about 10 degrees, such as about -5 degrees to about 5 degrees.

[0086] Figure 4B The embodiment enables the use of a common gas panel (e.g., gas panel 108) and a common exhaust device (e.g., common exhaust duct 171). The use of a common gas panel and a common exhaust device reduces the cost of the system, but still enables high precision in the heating and process gas flow within the first process volume 124 and the second process volume 126. The common gas panel 108 is Figure 4B may be particularly beneficial in embodiments where the first and second gas injection channels 182a, 182b are relatively close together.

[0087] Figure 4C The third embodiment described herein is shown Figure 2 In the third embodiment described herein and in Figure 4C middle, Figure 2 The chamber body 130 is Figure 4C In the chamber body 430c, the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned at an acute angle α relative to the reference plane 107 (e.g., the longitudinal axis of the chamber body 430). The cross-sectional view of the chamber body 430c shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. Figure 4C The chamber body 430 c also includes an equalization port 140 .

[0088] exist Figure 4CIn the exemplary embodiment of the present invention, all the first gas injection channels 182a, the first purge gas inlet 184a and the first exhaust port 172a are parallel to each other and are positioned in line with each other along the third flow path plane 410c. The second gas injection channel 182b, the second purge gas inlet 184b and the second exhaust port 172b are also parallel to each other and are positioned in line with each other along another third flow path plane 410c. The opening 136 in both the first body portion 415a and the second body portion 415b is at an angle to all the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b and the first and second exhaust ports 172a, 172b. The opening 136 of the first body portion 415a is adjacent to the first gas injection channel 182a and the first exhaust port 172a and is partially located below the first gas injection channel 182a and the first exhaust port 172a. The opening 136 is only partially disposed below the first gas injection channel 182a and the first purge gas inlet 184a. The opening 136 of the second body portion 415b is adjacent to and partially disposed below the second gas injection passage 182b and the second exhaust port 172b. The opening 136 is only partially disposed below the second gas injection passage 182b and the second purge gas inlet 184b.

[0089] The equalizing port 140 is disposed between the first body portion 415a and the second body portion 415b. Figure 4C In the embodiment described in FIG. 1 , the equalization port 140 connects the first processing space 124 and the second processing space 126 to each other.

[0090] Figure 4C The gas injection chord length 404 and the exhaust port chord length 406 are Figure 4A and Figure 4B The gas injection chord length 404 and the exhaust chord length 406 are defined in the same manner. Figure 4A and Figure 4B The process gas flow path 408 is defined in the same manner as Figure 4C The process gas flow path 408. Figure 4C In the embodiment disclosed in , the process gas flow path 408 travels at an angle relative to the center plane 103 of the chamber body 430c and the reference plane 107, and moves toward the outer edge of the chamber body 430c. The process gas flowing from the first gas injection channel 182a flows to the first exhaust port 172a, and the process gas flowing from the second gas injection channel 182b flows to the second exhaust port 172b.

[0091] and Figure 4A and 4BAs in the embodiment of the present invention, the first and second gas injection channels 182a, 182b and the first and second exhaust ports 172a, 172b are each divided into two by the third flow path plane 410c. The third flow path plane 410c extends through the first body portion 415a and the second body portion 415b. Each of the third flow path planes 410c is parallel to the flow of the process gas from one of the first or second gas injection channels 182a, 182b to one of the first or second exhaust ports 172a, 172b. Figure 4C In the exemplary embodiment of , each third flow path plane 410c is at an acute angle α with reference plane 107 when angle α faces (eg, is oriented) inwardly toward center plane 103. Angle α is an angle that is inboard of second flow path plane 410c and closer to opening 136. Figure 4C In the embodiments described in the accompanying text, the angle α is about 45 degrees. In some exemplary embodiments, the angle α is about 10 degrees to about 80 degrees, such as about 20 degrees to about 70 degrees, such as about 30 degrees to about 60 degrees, such as about 35 degrees to about 55 degrees, such as about 40 degrees to about 50 degrees.

[0092] exist Figure 4C In the embodiments described in the drawings, a common gas panel such as the gas panel 108 can be more easily utilized to provide process gas to the first process chamber 101a and the second process chamber 101b. The first and second gas injection channels 182a, 182b are close to each other, so shorter gas ducts can be utilized to transfer the process gas from the gas panel 108 to the first and second gas injection channels 182a, 182b. Having shorter gas ducts saves cost, and without variable duct lengths and back pressures, pressure can be more evenly distributed between the first and second process chambers 101a, 101b (allowing for improved gas flow uniformity). Figure 4C The exhaust system of the embodiment may include a separate exhaust system for each of the first process chamber 101a and the second process chamber 101b. In some embodiments, a common exhaust system, such as a common exhaust duct 171, may also be used in this embodiment. The common gas panel and independent exhaust system reduce the difficulty of servicing the lamp head and other chamber components.

[0093] Figure 4D The fourth embodiment described herein is shown Figure 2 In the fourth embodiment described herein and in Figure 4D, the chamber body 130 is replaced with a chamber body 430d. In the chamber body 430d, the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b, and the first and second exhaust ports 172a, 172b are positioned at an obtuse angle α relative to the reference plane 107 (e.g., at an obtuse angle relative to the longitudinal axis of the chamber body 430). The cross-sectional view of the chamber body 430d shows the relationship between the opening 136, the first and second gas injection channels 182a, 182b, and the first and second exhaust ports 172a, 172b. Figure 4A The chamber body 430d also includes an equalization port 140 .

[0094] exist Figure 4D In the exemplary embodiment of the present invention, all the first gas injection channels 182a, the first purge gas inlet 184a and the first exhaust port 172a are parallel to each other and are positioned in line with each other along the fourth flow path plane 410d. The second gas injection channel 182b, the second purge gas inlet 184b and the second exhaust port 172b are also parallel to each other and are positioned in line with each other along another fourth flow path plane 410d. The opening 136 in both the first body portion 415a and the second body portion 415b is at an angle to all the first and second gas injection channels 182a, 182b, the first and second purge gas inlets 184a, 184b and the first and second exhaust ports 172a, 172b. The opening 136 of the first processing chamber 101a is adjacent to the first gas injection channel 182a and the first exhaust port 172a and is partially disposed below the first gas injection channel 182a and the first exhaust port 172a. The opening 136 is only partially disposed below the first gas injection channel 182a and the first purge gas inlet 184a. The opening 136 of the second processing chamber 101b is adjacent to and partially disposed below the second gas injection channel 182b and the second exhaust port 172b. The opening 136 is only partially disposed below the second gas injection channel 182b and the second purge gas inlet 184b.

[0095] The equalizing port 140 is disposed between the first body portion 415a and the second body portion 415b. Figure 4D In the embodiment described in FIG. 1 , the equalization port 140 connects the first processing space 124 and the second processing space 126 to each other.

[0096] Figure 4D The gas injection chord length 404 and the exhaust port chord length 406 are FIG. 4A to FIG. 4C The gas injection chord length 404 and the exhaust chord length 406 are defined in the same manner. FIG. 4A to FIG. 4C The process gas flow path 408 is defined in the same manner as Figure 4DThe process gas flow path 408. Figure 4D In the embodiment disclosed in , the process gas flow path 408 travels at an angle α relative to the center plane 103 of the chamber body 430d and the reference plane 107, and moves toward the center wall 132 of the chamber body 430d. The process gas flowing from the first gas injection channel 182a flows to the first exhaust port 172a, and the process gas flowing from the second gas injection channel 182b flows to the second exhaust port 172b.

[0097] and FIG. 4A to FIG. 4C As in the embodiment of the present invention, each of the first and second gas injection channels 182a, 182b and the first and second exhaust ports 172a, 172b is divided into two by a fourth flow path plane 410d. One fourth flow path plane 410d extends through each of the first body portion 415a and the second body portion 415b. The fourth flow path plane 410d is parallel to the flow of the process gas from the first and second gas injection channels 182a, 182b to the first and second exhaust ports 172a, 172b. Figure 4D In the exemplary embodiment of , the fourth flow path plane 410d is disposed at an obtuse angle α with respect to the reference plane 107 (when this angle is taken as an inward angle toward the center plane 103). Angle α is an angle that is inward of the second flow path plane 410b and closer to the opening 136. Figure 4C In the embodiment described in , the angle α is about 135 degrees. In some exemplary embodiments, the angle α is about 100 degrees to about 170 degrees, such as about 110 degrees to about 160 degrees, such as about 120 degrees to about 150 degrees, such as about 125 degrees to about 145 degrees, such as about 130 degrees to about 140 degrees.

[0098] exist Figure 4D In the embodiment described in, the common exhaust duct 171 can be more easily used to remove the process gas from the first processing chamber 101a and the second processing chamber 101b. The first exhaust port 172a and the second exhaust port 172b are close to each other, so the exhaust gas is transferred from the first processing space 124 and the second processing space 126 to the vacuum pump 110 using a shorter gas duct. In an embodiment where the chamber body 430d is a monolithic body, the first exhaust port 172a and the second exhaust port 172b can be merged into a single exhaust port. Having a shorter gas duct and a single exhaust device can reduce chamber costs. The use of a single vacuum pump 110 further saves equipment costs. The use of the common exhaust duct 171 simplifies the maintenance of the exhaust device, which reduces the total downtime of the processing chamber when cleaning the exhaust system.

[0099] Figure 5 Operations of a method 500 for processing a substrate according to embodiments described herein are shown. The method 500 utilizes Figure 1 to the apparatus described in Figure 4. The method 500 utilizes one or a combination of a common gas panel and a common exhaust plenum.

[0100] At operation 502 of method 500, a process gas is flowed from a common gas panel (e.g., gas panel 108). The process gas may be any suitable process gas used in an epitaxial deposition process. The process gas may include a Group V precursor gas or a Group III precursor gas. In some embodiments, a mixture of different process gases may be used for operation 502. In some embodiments, the process gas may include, for example, a silicon-containing precursor such as silane, a halosilane, or a combination thereof. The silane may include silane (SiH 4 ) and have the empirical formula Si x H (2x+2) Higher-order silanes, such as disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ) and tetrasilane (Si 4 H 10 ). The halosilanes may include monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), silicon tetrachloride (STC), or combinations thereof. The process gas may alternatively include a germanium-containing precursor. The process gas may further include a precursor gas. Depending on the desired conductive properties of the deposited epitaxial layer, the precursor gas may include, for example, phosphorus, boron, arsenic, gallium, or aluminum. The process gas may further include an etchant gas. The etchant gas may include, for example, or any gas containing halogen molecules, such as hydrogen chloride (HCl), chlorine (Cl), or hydrogen fluoride (HF). The process gas may further include a carrier gas. The carrier gas may include, for example, nitrogen (N 2 ), argon (Ar), helium (He), or hydrogen (H 2 ).

[0101] At operation 504 of method 500, a multi-channel flow controller is used, for example, to distribute the process gas flowing out of the gas panel 108. The process gas then flows through the first and second gas injection channels 182a, 182b to enter the first and second processing spaces 124, 126. The split process gas flows through the first and second gas injection channels 182a, 182b at the same rate. There may be additional equipment elements (not shown) along the process gas flow path, such as flow controllers, valves, and pumps. Additional equipment elements may be disposed between the gas panel 108 and the first and second gas injection channels 182a, 182b. Additional flow control elements may ensure equal distribution of the process gas flow between the first processing space 124 and the second processing space 126.

[0102] At operation 506 of method 500, a process gas is flowed over two or more substrates, such as substrate 155. The two or more substrates of operation 506 may be two substrates. After operation 504, a process gas may be delivered to each substrate from the first and second gas injection channels 182a, 182b. The flow of the process gas over the substrate enables an epitaxial deposition process.

[0103] At operation 508 of method 500, the process gas is exhausted as exhaust gas through a common exhaust chamber. The common exhaust chamber may be the common exhaust duct 171 discussed herein. Before entering the common exhaust duct 171, the process gas is drawn from the first process chamber 124 and the second process chamber 126 through the first exhaust port 172a and the second exhaust port 172b. After the exhaust gas enters the common exhaust duct 171, the exhaust gas is removed by the vacuum pump 110 via the exhaust outlet pipe 128.

[0104] Figure 6 FIG103 shows a top plan view of a single upper window assembly 600 disposed above the chamber body 130 of the first processing chamber 101a and the second processing chamber 101b. The single upper window assembly 600 includes a single upper window 616 and the chamber body 130. The single upper window 616 includes two inner windows 612a and 612b. The two inner windows 612a and 612b are the first inner window 612a disposed above the first processing space 124, as shown in FIG103. Figure 1 As shown, and a second inner window 612b is provided above the second processing space 126, as shown Figure 1 The outer window support 614 is disposed around the first inner window 612 a and the second inner window 612 b , and supports the single upper window assembly 600 along a support groove similar to the support groove 304 .

[0105] In the embodiment using the single upper window assembly 600, a portion of the single upper window 616 is disposed above the middle of the central wall 132. The shape of the support groove 304 of the single upper window 616 is similar to two overlapping ovals or circles, so that the outer contour of the single upper window 616 is similar to the contour of an infinity symbol, a number 8, or a lemniscate. The upper window assembly 600 can be connected to the central wall 132. Figures 1 to 3 as well as 4A to 4D The embodiments shown are used together.

[0106] Although only two processing chambers with a common gas panel and exhaust system are described, the embodiments disclosed herein can be further scaled to include additional processing chambers. In some embodiments, there can be four processing chambers, which are arranged adjacent to each other and have a common chamber body, such as chamber body 130.

[0107] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be envisaged without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the appended claims.

Claims

1. An epitaxial deposition system for substrate processing, comprising: a first epitaxial processing chamber defining a first processing volume enclosed therein, a first substrate support positioned in the first processing volume and configured to support a first substrate; a second epitaxial processing chamber defining a second processing volume enclosed therein, a second substrate support positioned in the second processing volume and configured to support a second substrate; and a first common conduit, the first common conduit being fluidically coupled to both the first processing volume and the second processing volume, the first common conduit being configured to be coupled to an epitaxial deposition gas source, The epitaxial deposition system is configured to deliver a first epitaxial process gas from the epitaxial deposition gas source to the first process volume and the second process volume through the first common conduit.

2. The epitaxial deposition system of claim 1, wherein the first common conduit is divided into a first conduit and a second conduit, the first conduit being fluidically coupled to the first processing space and the second conduit being fluidically coupled to the second processing space. 3 . The epitaxial deposition system of claim 2 , further comprising a shunt controller disposed between the first common conduit and the first conduit and the second conduit.

4. The epitaxial deposition system of claim 1, further comprising a second common conduit fluidly coupled to both the first processing volume and the second processing volume, the second common conduit being adapted to be coupled to a process gas source.

5. The epitaxial deposition system of claim 4, wherein the second common conduit is divided into a first conduit and a second conduit, the first conduit being fluidically coupled to the first processing space and the second conduit being fluidically coupled to the second processing space.

6. The epitaxial deposition system of claim 5 , wherein the first conduit comprises a first purge gas restrictor and the second conduit comprises a second purge gas restrictor, the first purge gas restrictor and the second purge gas restrictor balancing a flow of a process gas from the process gas source such that a flow of the process gas through the first conduit and the second conduit is the same.

7. The epitaxial deposition system of claim 1, wherein the first epitaxial processing chamber and the second epitaxial processing chamber share a vacuum pump.

8. The epitaxial deposition system of claim 1, further comprising a common exhaust fluidly coupled to both the first processing volume and the second processing volume.

9. The epitaxial deposition system of claim 1, wherein the epitaxial deposition gas source comprises a process gas selected from a Group V precursor gas or a Group III precursor.

10. The epitaxial deposition system of claim 1, wherein the epitaxial deposition gas source comprises a process gas selected from silane, halosilane, or combinations thereof.

11. The epitaxial deposition system of claim 1, wherein the epitaxial deposition gas source comprises a process gas selected from dichlorosilane (DCS), trichlorosilane (TCS), or a combination thereof.

12. The epitaxial deposition system of claim 1, wherein the epitaxial deposition gas source supplies a precursor gas comprising phosphorus, boron, arsenic, gallium, or aluminum.

13. The epitaxial deposition system of claim 1, further comprising: a first gas injection passage in fluid communication with the first processing space and the first common conduit, the first gas injection passage providing the first epitaxial processing gas from the epitaxial deposition gas source to the first processing space; and A second gas injection channel is in fluid communication with the second process space and the first common conduit, the second gas injection channel providing the first epitaxial process gas from the epitaxial deposition gas source to the second process space.

14. The epitaxial deposition system of claim 13, further comprising: a second common conduit coupled to both the first processing space and the second processing space, the second common conduit being configured to be coupled to a purge gas source; a first purge gas inlet in fluid communication with the first processing space and the second common conduit, the first purge gas inlet providing a purge gas from the purge gas source to the first processing space; and A second purge gas inlet is in fluid communication with the second processing space and the second common conduit, the second purge gas inlet providing the purge gas from the purge gas source to the second processing space.

15. The epitaxial deposition system of claim 14, further comprising a common exhaust fluidly coupled to both the first processing volume and the second processing volume.

16. A method for epitaxial deposition, comprising: An epitaxial deposition process is performed on a first substrate on a first substrate support in a first processing volume of a first epitaxial processing chamber and on a second substrate on a second substrate support in a second processing volume of a second epitaxial processing chamber, wherein the first epitaxial processing chamber and the second epitaxial processing chamber are included in an epitaxial deposition system, wherein the epitaxial deposition process comprises: flowing a first process gas from the first process gas source to the first process volume and the second process volume via a first common conduit fluidly coupling the first process gas source to both the first process volume and the second process volume; flowing a second process gas from the second process gas source to the first process volume and the second process volume via a second common conduit fluidly coupling the second process gas source to both the first process volume and the second process volume; and An epitaxial layer is formed on the first substrate and the second substrate.

17. The method of claim 16, further comprising: The first process gas and the second process gas are exhausted through a common exhaust conduit that is in fluid communication with the first process space via a first exhaust conduit and in fluid communication with the second process space via a second exhaust conduit.

18. The method of claim 16, wherein the first process gas or the second process gas comprises a Group V precursor gas or a Group III precursor gas.

19. The method of claim 16, wherein the first process gas or the second process gas is selected from silane, halosilane, or a combination thereof.

20. The method of claim 16, wherein the first process gas or the second process gas comprises a germanium-containing precursor gas.

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