Vapor deposition crystal preparation device based on solid precursor evaporation

Abstract

The invention belongs to the technical field of crystal preparation, and particularly relates to a vapor deposition method crystal preparation device based on solid precursor evaporation, the vapor deposition method crystal preparation device comprises a mounting rack, an evaporation part is arranged at the upper part of the mounting rack, and a solid material can be melted and gasified in the evaporation part; meanwhile, the diffusion speed of steam is increased by utilizing the steam pressure generated when the evaporation solid material evaporates; one end in the evaporation part is connected with a conveying part, the conveying part can circularly convey and discharge high-temperature steam, the upper part of the mounting frame is also provided with a reaction part, a crystallization rod is placed in the reaction part, the interior of the reaction part is communicated with the other end of the conveying part, and the interior of the reaction part can spray steam to the crystallization rod for crystallization. According to the invention, the diffusion speed of the steam is increased by utilizing the steam pressure during evaporation of the solid precursor material, and meanwhile, the crystallization rod is rotated by utilizing the circulating steam, so that the steam can be uniformly crystallized on the outer edge of the crystallization rod, and the crystallization quality is further improved.

Description

Technical Field

[0001] The invention belongs to the technical field of crystal preparation, and in particular relates to a crystal preparation device using a vapor deposition method based on evaporation of a solid precursor. Background Art

[0002] Vapor phase growth is a method of growing crystals by continuously depositing atoms (or molecules) in the vapor phase on the crystal interface. This method involves converting the crystalline material into the vapor phase through processes such as sublimation, evaporation, sputtering or decomposition, and then depositing it under appropriate conditions, thereby achieving controllable atomic transfer of matter from the source material to the solid film.

[0003] The vapor phase growth method can be used to grow single crystals, which can be obtained from solid, liquid (melt or solution) or gas, but artificial crystals are mostly obtained by supercooling the melt or supersaturating the solution.

[0004] Vapor phase growth technology is particularly suitable for the growth of whiskers, plate-like crystals and epitaxial films, including homoepitaxial and heteroepitaxial.

[0005] During the vapor phase growth process, the temperature must be controlled uniformly to prevent local overcooling or overheating, which would affect the nucleation and growth of the crystal. The rate of gas phase transportation should be uniform to avoid uneven distribution of the gas phase, which will affect the quality of crystal molding. Summary of the invention

[0006] The purpose of the present invention is to provide a crystal preparation device based on a vapor deposition method of solid precursor evaporation, which can increase the diffusion rate of the steam by utilizing the vapor pressure of the solid precursor material during evaporation, and at the same time utilize the circulating steam to rotate the crystal rod, so that the steam can be evenly crystallized on the outer edge of the crystal rod, thereby improving the crystallization quality.

[0007] The technical solution adopted by the present invention is as follows: A crystal preparation device based on vapor deposition method of solid precursor evaporation, comprising a mounting frame, an evaporation portion is arranged on the upper part of the mounting frame, the interior of the evaporation portion can melt the solid material and vaporize the solid material, and at the same time, the vapor pressure when the solid precursor material evaporates is used to accelerate the diffusion speed of the vapor; One end of the evaporation part is connected to a transport part, which can circulate and discharge high-temperature steam: A reaction part is also provided on the upper part of the mounting frame, a crystallization rod is placed inside the reaction part, the inside of the reaction part is connected with the other end of the transport part, and steam can be sprayed on the crystallization rod to perform crystallization inside the reaction part; The evaporation part, the transport part and the reaction part are all provided with electric high-temperature vacuum ball valves; The evaporation part includes an evaporation chamber, an evaporation cover, an air guide seat, a heater, a crucible body and a crucible cover. The evaporation chamber is fixedly connected to the upper part of the mounting frame, an electric high-temperature vacuum ball valve is fixedly connected to the upper part of the evaporation chamber, the evaporation cover is fixedly connected to the other end of the evaporation chamber, the air guide seat is fixedly connected to the lower end of the interior of the evaporation chamber, the heater is arranged inside the air guide seat, the crucible body is arranged inside the air guide seat, and the outer edge of the crucible body cooperates with the interior of the heater, and the crucible cover is arranged at the upper end opening of the crucible body.

[0008] In a preferred embodiment, a rotating fan is rotatably provided inside the crucible cover, and the rotating fan is matched with the upper end of the interior of the crucible body.

[0009] In a preferred embodiment, an exhaust hole is provided inside the gas guide seat, and the exhaust hole cooperates with the crucible body.

[0010] In a preferred embodiment, the transport part includes an exhaust pipe, a transport pump, a reversing valve, an exhaust nozzle, a discharge pipe and a delivery pipe, one end of the exhaust pipe is connected to the interior of the evaporation chamber, the input end of the transport pump is connected to the other end of the exhaust pipe, the input end of the reversing valve is connected to the output end of the transport pump, the exhaust nozzle is connected to the output end of the reversing valve, and the exhaust nozzle is located at the upper end inside the reaction part, one end of the discharge pipe is connected to the other output end of the reversing valve, an electric high-temperature vacuum ball valve is provided in the middle of the discharge pipe, one end of the delivery pipe is connected to the lower end inside the reaction part, and the other end of the delivery pipe is connected to the interior of the gas guide seat.

[0011] In a preferred embodiment, the output direction of the exhaust nozzle matches the position of the crystal rod.

[0012] In a preferred embodiment, the exhaust pipe is configured as a double-layer as a whole, and a coolant is provided between the double layers of the exhaust pipe.

[0013] In a preferred embodiment, the reaction part includes a reaction chamber, a reaction cover, a support seat, a turbine and a rotating seat. The reaction chamber is fixedly connected to the upper part of the mounting frame, the upper end of the interior of the reaction chamber cooperates with the exhaust nozzle, the lower end of the interior of the reaction chamber is arranged to be connected to the delivery pipe, the reaction cover is fixedly set at the opening at the other end of the reaction chamber, the support seat is fixedly connected to the middle section of the interior of the reaction chamber, the turbine is rotatably set inside the support seat, the axis center of the rotating seat is fixedly connected to the axis center of the turbine, the rotating seat is rotatably connected to the upper end of the support seat, and the axis center of the rotating seat is fixedly connected to the lower end of the crystal rod.

[0014] In a preferred embodiment, an air guide groove is provided at the upper end of the support seat, the inlet of the air guide groove, the crystal rod and the output direction of the exhaust nozzle correspond to each other in a straight line, and the outlet of the air guide groove cooperates with one end of the conveying pipe.

[0015] In a preferred embodiment, the interior of the air guide groove cooperates with the blades on the outer edge of the turbine.

[0016] In a preferred embodiment, the evaporation chamber and the reaction chamber are both designed with at least two layers.

[0017] The technical effects achieved by the present invention are: The present invention adopts the design of the evaporation part, the interior of the evaporation part can melt the solid material and vaporize the solid material to provide a closed space, and at the same time utilizes the steam pressure generated when the solid precursor material evaporates and the circulating steam flow to accelerate the diffusion speed of the steam, thereby improving the evaporation efficiency of the solid precursor material; The present invention adopts the design of the transport part, through which the high-temperature steam can be pumped from the inside of the evaporation part to the inside of the reaction part, thereby realizing the transportation of the steam. At the same time, the transport pipeline is used to allow the steam inside the high-pressure reaction chamber to re-enter the inside of the evaporation chamber to realize cyclic transportation, thereby improving the steam utilization rate. The transport part can also extract the air inside the evaporation part and the reaction part, so that the inside of the evaporation part and the reaction part enter a vacuum state, thereby reducing the generation of other substances after the steam reacts with the air inside the evaporation part and the reaction part. The transport part can also be used to remove the steam from the evaporation part and the reaction part after the reaction is completed. Then extract the steam inside the evaporation part and the reaction part to accelerate the cooling inside the evaporation part and the reaction part, and improve the preparation efficiency; The present invention adopts the design of the reaction part, utilizes the circulating flow of steam to drive the turbine to rotate together, and drives the crystallization rod on the upper part of the rotating seat to rotate through the rotation of the turbine. The rotation of the crystallization rod enables the steam to be evenly sprayed on the outer edge of the crystallization rod to perform a crystallization reaction, thereby improving the crystallization quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is an overall schematic diagram of an embodiment of the present invention; Figure 2 is an overall internal exploded view of an embodiment of the present invention; Figure 3 is an overall side sectional view of an embodiment of the present invention; Figure 4 is an exploded view of the reaction portion of an embodiment of the present invention; Figure 5 is a top view of a cross-sectional view of a reaction portion of an embodiment of the present invention; Figure 6 is an exploded view of a transport unit of an embodiment of the present invention; Figure 7is a cross-sectional view of an exhaust pipe according to an embodiment of the present invention; Figure 8 Schematic diagram of the connection between the transport pump and the discharge pipe of an embodiment of the present invention; Fig. 9 Schematic diagram of the connection between the transport pump and the discharge nozzle of an embodiment of the present invention; Fig.10 is an exploded view of the evaporation portion of an embodiment of the present invention; Fig.11 Schematic diagram of a crucible cover according to an embodiment of the present invention.

[0019] In the accompanying drawings, the components represented by the reference numerals are listed as follows: 1. Mounting frame; 2. Evaporation part; 201. Evaporation chamber; 202. Evaporation cover; 203. Gas guide seat; 2031. Exhaust hole; 204. Heater; 205. Crucible body; 206. Crucible cover; 2061. Rotating fan; 3. Transport part; 301. Exhaust pipe; 302. Transport pump; 303. Reversing valve; 304. Exhaust nozzle; 305. Exhaust pipe; 306. Delivery pipe; 4. Reaction part; 401. Reaction chamber; 402. Reaction cover; 403. Support seat; 4031. Gas guide groove; 404. Turbine; 405. Rotating seat; 5. Crystallization rod; 6. Electric high-temperature vacuum ball valve. DETAILED DESCRIPTION

[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0021] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0022] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present invention. The phrase "in a preferred embodiment" that appears in different places in this specification does not refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments.

[0023] Secondly, the present invention is described in detail with reference to the schematic diagram. When describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0024] See also Figures 1 to 11 As shown, the present invention provides a crystal preparation device based on vapor deposition method of solid precursor evaporation, comprising a mounting frame 1, an evaporation portion 2 is arranged on the upper part of the mounting frame 1, the interior of the evaporation portion 2 can melt the solid material and vaporize the solid material, and at the same time, the vapor pressure when the solid material evaporates is used to accelerate the diffusion speed of the vapor; One end of the evaporation part 2 is connected to the transport part 3, which can circulate and discharge the high-temperature steam: A reaction part 4 is also provided on the upper part of the mounting frame 1. A crystallization rod 5 is placed inside the reaction part 4. The inside of the reaction part 4 is connected to the other end of the transport part 3. Steam can be sprayed on the crystallization rod 5 inside the reaction part 4 to perform crystallization. The evaporation section 2, the transport section 3 and the reaction section 4 are all provided with electric high-temperature vacuum ball valves 6; The evaporation part 2 includes an evaporation chamber 201, an evaporation cover 202, an air guide seat 203, a heater 204, a crucible body 205 and a crucible cover 206. The evaporation chamber 201 is fixedly connected to the upper part of the mounting frame 1. The upper part of the evaporation chamber 201 is fixedly connected to an electric high-temperature vacuum ball valve 6. The opening and closing of the electric high-temperature vacuum ball valve 6 enables the inside of the evaporation chamber 201 to communicate with the outside. The evaporation cover 202 is fixedly connected to the other end of the evaporation chamber 201. The connection between the evaporation cover 202 and the evaporation chamber 201 can be fixed by bolts or a locking mechanism. The air guide seat 203 and the inside of the evaporation chamber 201 are connected. The lower end is fixedly connected, and the heater 204 is arranged inside the gas guide seat 203. The heat emitted from the outside of the heater 204 can heat the air inside the gas guide seat 203, creating a high-temperature environment for the inside of the evaporation chamber 201. The crucible body 205 is arranged inside the gas guide seat 203, and the outer edge of the crucible body 205 cooperates with the inside of the heater 204. The crucible body 205 is heated by the heater 204 to melt and evaporate the precursor material inside the crucible body 205. The crucible cover 206 is arranged at the upper end opening of the crucible body 205 to prevent the melted and boiling precursor material of the crucible body 205 from splashing.

[0025] Specifically, the powdered precursor material is introduced into the crucible body 205 by opening the evaporation cover 202, and then the crucible cover 206 is placed at the opening at the upper end of the crucible body 205. Then, the evaporation cover 202 and the entrance of the evaporation chamber 201 are fixedly connected by the locking mechanism at the evaporation cover 202, so as to complete the material filling inside the crucible body 205 and the sealing of the evaporation chamber 201. Then, a seed crystal is placed on the outer edge of the crystal rod 5 and fixed inside the reaction part 4, and then the entrance of the reaction part 4 is sealed, so that the reaction part 4 and the interior of the evaporation chamber 201 form a closed space; Then, the inside of the evaporation chamber 201 and the reaction part 4 are evacuated by the transport part 3 to reduce the reaction between the precursor material and the air inside the evaporation chamber 201 or the reaction part 4 to generate other substances; After the vacuuming is completed, the transport unit 3 closes the discharge end and enters the circulation mode, and the heater 204 is powered on for heating, and the heat is transferred to the crucible body 205 inside by the heater 204, so that the temperature of the crucible body 205 is increased to melt and evaporate the precursor powder inside the crucible body 205, and the steam inside the evaporation chamber 201 is transported to the inside of the reaction unit 4 by the transport unit 3, so that the steam is discharged at the crystal rod 5 inside the reaction unit 4 to react with the seed crystal, and the crystal preparation at the crystal rod 5 is completed; Since the steam inside the evaporation chamber 201 is continuously extracted to form a negative pressure space, a high-pressure area is formed inside the reaction part 4 to which the steam is continuously transported, so that the steam inside the reaction part 4 that does not participate in crystallization re-enters the air guide seat 203 inside the evaporation chamber 201 through the interior of the transport part 3, and then re-combines with the new steam and is transported back to the interior of the reaction part 4 to carry out a crystallization reaction at the crystallization rod 5, thereby completing the recycling of the steam and improving the utilization rate of the steam.

[0026] See also Fig.11 As shown, the crucible cover 206 is internally provided with a rotating fan 2061, and the rotating fan 2061 cooperates with the upper end of the interior of the crucible body 205. When the crucible body 205 heats the precursor powder to evaporate it, the steam is discharged through the interior of the crucible cover 206 and drives the rotating fan 2061 to rotate. The rotation of the rotating fan 2061 can accelerate the diffusion of steam at the crucible cover 206, and can also intercept the precursor material splashed after melting and boiling inside the crucible body 205.

[0027] See also Fig.10 As shown, an exhaust hole 2031 is opened inside the gas guide seat 203, and the exhaust hole 2031 cooperates with the crucible body 205. The circulating steam is discharged through the exhaust hole 2031, thereby driving the steam flow of the crucible body 205, further improving the efficiency of steam diffusion, thereby increasing the evaporation rate of the precursor material.

[0028] See also Figure 2 , Figure 3 and Figure 6As shown, the transport part 3 includes an exhaust pipe 301, a transport pump 302, a reversing valve 303, an exhaust nozzle 304, a discharge pipe 305 and a delivery pipe 306, one end of the exhaust pipe 301 is connected to the interior of the evaporation chamber 201, the input end of the transport pump 302 is connected to the other end of the exhaust pipe 301, the input end of the reversing valve 303 is connected to the output end of the transport pump 302, the exhaust nozzle 304 is connected to the output end of the reversing valve 303, and the exhaust nozzle 304 is located at the upper end of the reaction part 4, one end of the discharge pipe 305 is connected to the other output end of the reversing valve 303, an electric high-temperature vacuum ball valve 6 is arranged in the middle of the discharge pipe 305, one end of the delivery pipe 306 is connected to the lower end of the reaction part 4, and the other end of the delivery pipe 306 is connected to the interior of the gas guide seat 203; The transport pump 302 pumps the steam in the evaporation chamber 201 to the reversing valve 303 through the exhaust pipe 301, and the reversing valve 303 switches the steam to be discharged at the exhaust nozzle 304 or the exhaust pipe 305. When the inside of the reversing valve 303 is switched to the transport pump 302 and the exhaust nozzle 304 being connected, the electric high-temperature vacuum ball valve 6 at the exhaust pipe 305 is in a closed state, and the transport pump 302 passes the steam through the inside of the reversing valve 303 and then enters the exhaust nozzle 304 for discharge, and the exhaust nozzle 304 discharges the steam at the crystallization rod 5; When the interior of the reversing valve 303 is switched to be connected to the transport pump 302 and the exhaust pipe 305, the electric high-temperature vacuum ball valve 6 at the exhaust pipe 305 is in an open state. At this time, the interior of the evaporation chamber 201 and the reaction part 4 can be evacuated through the transport pump 302. At the same time, after the crystallization is completed, the steam inside the evaporation chamber 201 and the reaction part 4 can also be extracted and discharged. At this time, the electric high-temperature vacuum ball valve 6 at the evaporation chamber 201 and the reaction part 4 is in an open state, which promotes the acceleration of the air flow inside the evaporation chamber 201 and the reaction part 4 and accelerates the cooling.

[0029] See also Figure 5 As shown, the output direction of the exhaust nozzle 304 matches the position of the crystallization rod 5, so that the steam can better contact the crystallization rod 5, thereby improving the crystallization efficiency.

[0030] See also Figure 7 As shown, the exhaust pipe 301 is configured as a double layer as a whole, and a coolant is provided between the double layers of the exhaust pipe 301. The cooling water inside the exhaust pipe 301 is connected to an external cooling device. The circulation of the cooling water by the external cooling device can reduce the temperature of the exhaust pipe 301, so that the steam entering the exhaust pipe 301 is cooled, the volume of the steam is reduced, and the concentration of the steam is increased, thereby increasing the reaction and crystallization between the steam and the seed crystals at the crystallization rod 5.

[0031] See also Figures 1 to 5As shown, the reaction part 4 includes a reaction chamber 401, a reaction cover 402, a support seat 403, a turbine 404 and a rotating seat 405, the reaction chamber 401 is fixedly connected to the upper part of the mounting frame 1, the upper end of the reaction chamber 401 cooperates with the exhaust nozzle 304, the lower end of the reaction chamber 401 is arranged to be connected with the delivery pipe 306, the reaction cover 402 is fixedly arranged at the opening at the other end of the reaction chamber 401, the support seat 403 is fixedly connected to the middle section of the reaction chamber 401, the turbine 404 is rotatably arranged inside the support seat 403, the axis center of the rotating seat 405 is fixedly connected to the axis center of the turbine 404, the rotating seat 405 is rotatably connected to the upper end of the support seat 403, and the axis center of the rotating seat 405 is fixedly connected to the lower end of the crystallization rod 5; The lower end of the crystal rod 5 is fixedly mounted on the upper end of the rotating seat 405 by means of threads or other fixing methods, and then the reaction cover 402 and the entrance of the reaction chamber 401 are fixedly connected by means of the locking mechanism of the reaction cover 402, so that the interior of the reaction chamber 401 forms a closed space; When steam is introduced into the interior of the reaction chamber 401, the steam is ejected at the crystallization rod 5, and then the steam is discharged at the delivery pipe 306 after passing through the interior of the support seat 403. When the steam moves inside the support seat 403, it drives the turbine 404 to rotate. At this time, the rotation of the turbine 404 drives the rotating seat 405 to rotate, and the rotation of the rotating seat 405 drives the crystallization rod 5 to rotate. The rotation of the crystallization rod 5 enables the steam to be evenly sprayed on the outer edge of the crystallization rod 5 for crystallization reaction, thereby improving the crystallization quality.

[0032] See also Figure 5 As shown, an air guide groove 4031 is provided at the upper end of the support seat 403, and the inlet of the air guide groove 4031, the crystallization rod 5 and the output direction of the exhaust nozzle 304 correspond to each other in a straight line, so that the steam cooperates with the crystallization rod 5 on the path of discharging and entering the air guide groove 4031, and is further arranged to contact the outer edge of the crystallization rod 5 during the steam flow circulation, so as to further promote the crystallization reaction, and the outlet of the air guide groove 4031 cooperates with one end of the delivery pipe 306, so that the steam can flow through the interior of the air guide groove 4031 to the interior of the delivery pipe 306 and then enter the interior of the evaporation chamber 201.

[0033] See also Figure 4 As shown, the interior of the air guide groove 4031 cooperates with the blades on the outer edge of the turbine 404. The air guide groove 4031 provides guidance for the flow of steam, and the airflow during the flow of steam is used to provide lateral driving force for the blades of the turbine 404, so that the turbine 404 rotates as a whole, further improving the utilization of steam.

[0034] See also Figures 3 to 5 as well as Fig.10As shown, the evaporation chamber 201 and the reaction chamber 401 both adopt a design of at least two layers. The multi-layer design can reduce the heat loss inside the evaporation chamber 201 and the reaction chamber 401 and improve the temperature stability inside the evaporation chamber 201 and the reaction chamber 401.

[0035] The working principle of the present invention is as follows: the powdered precursor material is introduced into the interior of the crucible body 205 by opening the evaporation cover 202, and then the crucible cover 206 is placed at the opening at the upper end of the crucible body 205, and then the evaporation cover 202 and the entrance of the evaporation chamber 201 are fixedly connected by the locking mechanism at the evaporation cover 202, so as to complete the material filling inside the crucible body 205 and the sealing of the evaporation chamber 201; Then, a seed crystal is placed on the outer edge of the crystal rod 5 and fixed inside the reaction part 4, and then the entrance of the reaction part 4 is sealed, so that the reaction part 4 and the interior of the evaporation chamber 201 form a closed space; Then, the inside of the evaporation chamber 201 and the reaction part 4 are evacuated by the transport part 3 to reduce the reaction between the precursor material and the air inside the evaporation chamber 201 or the reaction part 4 to generate other substances; After the vacuuming is completed, the transport unit 3 closes the discharge end and enters the circulation mode, and the heater 204 is powered on for heating, and the heat is transferred to the crucible body 205 inside by the heater 204, so that the temperature of the crucible body 205 is increased to melt and evaporate the precursor powder inside the crucible body 205, and the steam inside the evaporation chamber 201 is transported to the inside of the reaction unit 4 by the transport unit 3, so that the steam is discharged at the crystal rod 5 inside the reaction unit 4 to react with the seed crystal, and the crystal preparation at the crystal rod 5 is completed; Since the steam inside the evaporation chamber 201 is continuously extracted to form a negative pressure space, a high-pressure area is formed inside the reaction part 4 to which the steam is continuously transported, so that the steam inside the reaction part 4 that does not participate in crystallization re-enters the air guide seat 203 inside the evaporation chamber 201 through the interior of the transport part 3, and then re-combines with the new steam and is transported back to the interior of the reaction part 4 to carry out a crystallization reaction at the crystallization rod 5, thereby completing the recycling of the steam and improving the utilization rate of the steam.

[0036] The above is only a preferred embodiment of the present invention. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principles of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention. The structures, devices and operating methods not specifically described and explained in the present invention shall be implemented according to the conventional means in the art unless otherwise specified and limited.

Claims

1. A crystal preparation device based on vapor deposition method of solid precursor evaporation, characterized in that: It comprises a mounting frame (1), wherein an evaporation portion (2) is arranged on the upper portion of the mounting frame (1), and the interior of the evaporation portion (2) is capable of melting solid materials and vaporizing the solid materials, while utilizing the vapor pressure when evaporating the solid precursor material to accelerate the diffusion speed of the vapor; One end of the evaporation part (2) is connected to a transport part (3), and the transport part (3) is capable of circulating and conveying high-temperature steam and discharging it: A reaction section (4) is also provided on the upper part of the mounting frame (1), a crystallization rod (5) is placed inside the reaction section (4), the interior of the reaction section (4) is connected to the other end of the transport section (3), and steam can be sprayed onto the crystallization rod (5) inside the reaction section (4) to perform crystallization; The evaporation section (2), the transport section (3) and the reaction section (4) are all provided with electric high-temperature vacuum ball valves (6); The evaporation part (2) comprises an evaporation chamber (201), an evaporation cover (202), an air guide seat (203), a heater (204), a crucible body (205) and a crucible cover (206); the evaporation chamber (201) is fixedly connected to the upper part of the mounting frame (1); an electric high-temperature vacuum ball valve (6) is fixedly connected to the upper part of the evaporation chamber (201); the evaporation cover (202) is fixedly connected to the other end of the evaporation chamber (201); the air guide seat (203) is fixedly connected to the lower end inside the evaporation chamber (201); the heater (204) is arranged inside the air guide seat (203); the crucible body (205) is arranged inside the air guide seat (203); the outer edge of the crucible body (205) matches the inside of the heater (204); and the crucible cover (206) is arranged at the upper end opening of the crucible body (205).

2. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 1, characterized in that: A rotating fan (2061) is rotatably arranged inside the crucible cover (206), and the rotating fan (2061) cooperates with the upper end inside the crucible body (205).

3. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 1, characterized in that: An exhaust hole (2031) is provided inside the air guide seat (203), and the exhaust hole (2031) cooperates with the crucible body (205).

4. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 1, characterized in that: The transport part (3) comprises an exhaust pipe (301), a transport pump (302), a reversing valve (303), an exhaust nozzle (304), a discharge pipe (305) and a delivery pipe (306); one end of the exhaust pipe (301) is connected to the interior of the evaporation chamber (201); the input end of the transport pump (302) is connected to the other end of the exhaust pipe (301); the input end of the reversing valve (303) is connected to the output end of the transport pump (302); and the exhaust nozzle (304) is connected to the exhaust pipe (305). The exhaust nozzle (304) is connected to the output end of the reversing valve (303), and the exhaust nozzle (304) is located at the upper end of the reaction part (4). One end of the exhaust pipe (305) is connected to the other output end of the reversing valve (303). An electric high-temperature vacuum ball valve (6) is provided in the middle of the exhaust pipe (305). One end of the delivery pipe (306) is connected to the lower end of the reaction part (4), and the other end of the delivery pipe (306) is connected to the interior of the gas guide seat (203).

5. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 4, characterized in that: The output direction of the exhaust nozzle (304) matches the position of the crystallization rod (5).

6. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 4, characterized in that: The exhaust pipe (301) is configured as a double layer as a whole, and a coolant is provided between the double layers of the exhaust pipe (301).

7. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 1, characterized in that: The reaction part (4) comprises a reaction chamber (401), a reaction cover (402), a support seat (403), a turbine (404) and a rotating seat (405); the reaction chamber (401) is fixedly connected to the upper part of the mounting frame (1); the upper end of the reaction chamber (401) cooperates with the exhaust nozzle (304); the lower end of the reaction chamber (401) is arranged to communicate with the delivery pipe (306); the reaction cover (402) is fixedly arranged at the opening at the other end of the reaction chamber (401); the support seat (403) is fixedly connected to the middle section of the reaction chamber (401); the turbine (404) is rotatably arranged inside the support seat (403); the axis of the rotating seat (405) is fixedly connected to the axis of the turbine (404); the rotating seat (405) is rotatably connected to the upper end of the support seat (403); and the axis of the rotating seat (405) is fixedly connected to the lower end of the crystallization rod (5).

8. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 7, characterized in that: An air guide groove (4031) is provided at the upper end of the support seat (403); the inlet of the air guide groove (4031), the crystallization rod (5) and the output direction of the exhaust nozzle (304) correspond to each other in a straight line; and the outlet of the air guide groove (4031) matches one end of the delivery pipe (306).

9. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 8, characterized in that: The interior of the air guide groove (4031) matches with the blades on the outer edge of the turbine (404).

10. The device for preparing crystals by vapor deposition based on evaporation of solid precursor according to claim 1, characterized in that: The evaporation chamber (201) and the reaction chamber (401) are both designed with at least two layers.

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