A semiconductor field effect transistor liquid sensor and a manufacturing method thereof

Abstract

The present application provides a semiconductor field effect transistor liquid sensor and a manufacturing method thereof, including: a substrate, a semiconductor field effect transistor and a microfluidic structure. The microfluidic structure includes a substrate, a reference electrode and a cover. The substrate includes a groove, the groove is used to place a reference electrolyte, and the reference electrode at least covers the side wall of the groove. The cover is arranged on a side surface of the substrate away from the substrate, the cover covers the groove, and the cover is used to perform ion exchange between the reference electrolyte and the solution to be tested, thereby realizing the function of the liquid sensor to perform detection. It can be seen that the present application forms a microfluidic structure with a high degree of integration by utilizing a substrate including a groove, a reference electrode covering the side wall of the groove, and a cover that seals the reference electrolyte. The microfluidic structure and the semiconductor field effect transistor are integrated on the same substrate, further improving the degree of integration, thereby ultimately realizing the miniaturization of the semiconductor field effect transistor liquid sensor, thereby meeting the detection needs of various scenarios.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a semiconductor field effect transistor liquid sensor and a manufacturing method thereof. Background Art

[0002] Currently, liquid sensors can be used to sense and detect ions or biological substances in liquid environments. Commonly used liquid sensors may include electrochemical sensors and semiconductor sensors. Although the manufacturing process of electrochemical sensors is mature, the integration of electrochemical sensors is low. The signal converters, external circuits, and measurement systems included in electrochemical sensors are more like a simple addition of core components (including electrodes, electrolytes, and filter membranes). That is, the low integration of electrochemical sensors limits their miniaturization development. Semiconductor sensors have low detection limits and high reliability, but semiconductor sensors usually require an external reference electrode to apply a gate bias. The large size of conventional reference electrodes limits the miniaturization development of semiconductor sensors.

[0003] However, with the increase in detection scenarios, such as small spaces and complex environments, miniaturized liquid sensors are needed. Therefore, there is currently a demand for miniaturization of liquid sensors. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a semiconductor field effect transistor liquid sensor and a manufacturing method thereof, which can provide a highly integrated and miniaturized liquid sensor to meet the detection needs of various scenarios.

[0005] The present application provides a semiconductor field effect transistor liquid sensor, the semiconductor field effect transistor liquid sensor comprising: a substrate, a semiconductor field effect transistor and a microchannel structure;

[0006] The semiconductor field effect transistor and the microchannel structure are arranged on one side surface of the substrate;

[0007] The microfluidic structure includes a substrate, a reference electrode and a cover sheet; the substrate includes a groove, the reference electrode at least covers the side wall of the groove, and the groove is used to place a reference electrolyte; the cover sheet is arranged on a side surface of the substrate away from the base plate, the cover sheet covers the groove, and the cover sheet is used to perform ion exchange between the reference electrolyte and the solution to be tested.

[0008] Optionally, the reference electrode also covers a surface of the substrate that is away from the base plate, and the cover plate exposes at least a partial area of ​​the reference electrode.

[0009] Optionally, the reference electrode is electrically connected to a conductive pad using a conductive structure, and the conductive pad is disposed on one side surface of the substrate.

[0010] Optionally, the conductive structure and the conductive pad are surrounded by glue, and the glue at least covers a partial area of ​​the reference electrode connected to the conductive structure.

[0011] Optionally, the conductive structure is a bump, solder, conductive glue or metal bonding wire.

[0012] Optionally, the material of the substrate is an organic polymer material, and the material of the substrate is polymethyl methacrylate PMMA, polydimethylsiloxane PDMS, cycloolefin copolymer COC, polyethylene terephthalate PET, polycarbonate PC, polyimide PI or polystyrene PS.

[0013] Optionally, the cover sheet is made of polyvinyl chloride (PVC) or porous ceramics.

[0014] The present application provides a method for manufacturing a semiconductor field effect transistor liquid sensor, the method comprising:

[0015] Using a 3D printing process or a demolding process to form a substrate including a groove, wherein the groove is used to place a reference electrolyte;

[0016] forming a reference electrode at least on a sidewall of the trench;

[0017] Bonding a cover sheet to the substrate, wherein the cover sheet is disposed on a side surface of the substrate away from the base plate, the cover sheet covers the groove, and the cover sheet is used for ion exchange between the reference electrolyte and the solution to be tested; the substrate, the reference electrode and the cover sheet constitute a microchannel structure;

[0018] The microchannel structure and the semiconductor field effect transistor are arranged on one side surface of the substrate.

[0019] Optionally, forming a reference electrode at least on a sidewall of the trench comprises:

[0020] A reference electrode is formed at least on the sidewall of the trench by using a sputtering process or an electron beam evaporation process.

[0021] Optionally, the reference electrode also covers a surface of the substrate that is away from the base plate, and the cover plate exposes at least a partial area of ​​the reference electrode.

[0022] The present application provides a semiconductor field effect transistor liquid sensor, which includes: a substrate, a semiconductor field effect transistor and a microfluidic structure. The semiconductor field effect transistor and the microfluidic structure are arranged on one side surface of the substrate, that is, by integrating the semiconductor field effect transistor and the microfluidic structure on one side surface of the substrate, the integration of the liquid sensor is improved, thereby realizing the miniaturization of the liquid sensor. The microfluidic structure includes a substrate, a reference electrode and a cover sheet. The substrate includes a groove, the groove is used to place a reference electrolyte, and the reference electrode at least covers the side wall of the groove. That is to say, by covering the side wall of the groove with the reference electrode, the reference electrode can be set and the reference electrode and the reference electrolyte can be contacted. Compared with the current single setting of the reference electrode extending into the reference electrolyte for contact, the integration is greatly improved. The cover sheet is arranged on the side surface of the substrate away from the substrate, and the cover sheet covers the groove, that is, the cover sheet can be used to exchange ions between the reference electrolyte and the solution to be tested, thereby realizing the function of the liquid sensor for detection. It can be seen that the present application forms a highly integrated microfluidic structure by utilizing a substrate including a groove, a reference electrode covering the sidewall of the groove, and a cover sheet sealing the reference electrolyte. The microfluidic structure and the semiconductor field effect transistor are integrated on the same substrate, thereby further improving the integration level, thereby ultimately realizing the miniaturization of the semiconductor field effect transistor liquid sensor, thereby meeting the detection needs of various scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 A schematic cross-sectional structure diagram of a semiconductor field effect transistor liquid sensor provided in an embodiment of the present application is shown;

[0025] Figure 2 A schematic diagram of a top view of a substrate provided in an embodiment of the present application is shown;

[0026] Figure 3 A schematic cross-sectional structure diagram of a semiconductor field effect transistor provided in an embodiment of the present application is shown;

[0027] Figure 4 A schematic flow chart of a method for manufacturing a semiconductor field effect transistor liquid sensor provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0028] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0029] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0030] This application is described in detail with reference to schematic diagrams. When describing the embodiments of this application in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of this application. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0031] Modern sensor technology has put forward higher requirements on the sensitivity, reliability, detection limit and other indicators of liquid sensors, and miniaturization is one of the hot research topics. Miniaturized liquid sensors can better adapt to various small spaces and complex environments, and can better sense ions or biological substances in liquid environments.

[0032] Considering the low integration of electrochemical sensors, long response time, and the problem of electrolyte replenishment is also one of the core factors restricting the service life of electrochemical sensors, it is difficult to miniaturize electrochemical sensors. Semiconductor sensors can be miniaturized, mainly reference electrodes. For example, silver / silver chloride reference electrodes can be manufactured, but the silver / silver chloride reference electrodes are still based on the principle of electrochemical sensors, and the manufacturing process is relatively complicated and not compatible with the semiconductor sensor process. In addition, the long response time and overall structural rigidity cannot be solved.

[0033] Based on this, the present application provides a semiconductor field effect transistor liquid sensor, which includes: a substrate, a semiconductor field effect transistor and a microfluidic structure, wherein the semiconductor field effect transistor and the microfluidic structure are arranged on one side surface of the substrate, that is, by integrating the semiconductor field effect transistor and the microfluidic structure on one side surface of the substrate, the integration of the liquid sensor is improved, thereby realizing the miniaturization of the liquid sensor. The microfluidic structure includes a substrate, a reference electrode and a cover sheet, the substrate includes a groove, the groove is used to place a reference electrolyte, and the reference electrode at least covers the side wall of the groove, that is, by covering the side wall of the groove with the reference electrode, the reference electrode can be set and the reference electrode and the reference electrolyte can be contacted, which greatly improves the integration compared to the current single setting of the reference electrode extending into the reference electrolyte for contact. The cover sheet is arranged on the side surface of the substrate away from the substrate, and the cover sheet covers the groove, that is, the cover sheet can be used to perform ion exchange between the reference electrolyte and the solution to be tested, thereby realizing the function of the liquid sensor for detection. It can be seen that the present application forms a highly integrated microfluidic structure by utilizing a substrate including a groove, a reference electrode covering the sidewall of the groove, and a cover sheet sealing the reference electrolyte. The microfluidic structure and the semiconductor field effect transistor are integrated on the same substrate, thereby further improving the integration level, thereby ultimately realizing the miniaturization of the semiconductor field effect transistor liquid sensor, thereby meeting the detection needs of various scenarios.

[0034] In order to better understand the technical solution and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0035] See also Figure 1 , this figure is a schematic diagram of the cross-sectional structure of a semiconductor field effect transistor liquid sensor provided in an embodiment of the present application.

[0036] In an embodiment of the present application, a semiconductor field effect transistor liquid sensor includes a substrate 100 , a semiconductor field effect transistor 200 , and a microchannel structure 300 .

[0037] For the sake of convenience, in the embodiment of the present application, the substrate 100 is taken as the bottom of the semiconductor field effect transistor liquid sensor, and other components are arranged above the substrate 100. In fact, the "top" and "bottom" of the semiconductor field effect transistor liquid sensor are related to the placement direction of the semiconductor field effect transistor liquid sensor. In other embodiments, the substrate 100 can be placed upward, and other components are arranged below the substrate 100.

[0038] The semiconductor field effect transistor 200 and the microchannel structure 300 are disposed on one side surface of the substrate 100. Figure 1As shown, the semiconductor field effect transistor 200 and the micro-channel structure 300 are disposed above the substrate 100 , that is, the semiconductor field effect transistor 200 and the micro-channel structure 300 are disposed on the upper surface of the substrate 100 .

[0039] The substrate 100 may be a single-layer structure or a multi-layer structure. A metal line may be provided on the substrate 100 for electrical extraction or for realizing electrical connection between the semiconductor field effect transistor 200 and the microfluidic structure 300. Specifically, the metal line included in the substrate 100 is used to realize electrical connection between the electrode of the semiconductor field effect transistor 200 and the reference electrode 303 included in the microfluidic structure 300.

[0040] Specifically, the material of the substrate 100 may be a semiconductor material, a ceramic material, or a flexible material. The material of the substrate 100 is adjusted according to the actual application scenario.

[0041] As an example, the semiconductor material may be silicon (Si), germanium (Ge), SiGe, silicon on insulator (SOI) or germanium on insulator (GOI), etc. The ceramic material may be low temperature co-fired (LTCC) ceramic.

[0042] By integrating the semiconductor field effect transistor 200 and the microchannel structure 300 on one side surface of the substrate 100, the integration level of the liquid sensor is improved, thereby realizing the miniaturization of the liquid sensor.

[0043] The microfluidic channel structure 300 includes a substrate 301, a reference electrode 303 and a cover sheet 302. Figure 1 As shown. The substrate 301 includes a groove 304, and the groove 304 is used to place a reference electrolyte, and the reference electrolyte is used to realize the detection function. Considering that the reference electrode 303 needs to contact the reference electrolyte, the reference electrode 303 can be set in the groove 304. Specifically, the reference electrode 303 can at least cover the side wall of the groove 304, so that when the reference electrolyte is placed in the groove 304, the reference electrode 303 covering the side wall of the groove 304 realizes contact with the reference electrolyte, thereby realizing the detection function using the reference electrode 303 and the reference electrolyte. In other words, by covering the side wall of the groove 304 with the reference electrode 303, the reference electrode 303 can be set, and the reference electrode 303 and the reference electrolyte can be contacted. Compared with the current single reference electrode that is extended into the reference electrolyte for contact, the integration is greatly improved.

[0044] Specifically, the reference electrode 303 may be formed by a sputtering process or an electron beam evaporation process. The reference electrode 303 formed by the sputtering process has high reliability and can increase the service life of the reference electrode 303 .

[0045] The cover sheet 302 is disposed on a side surface of the substrate 301 away from the substrate 100, and the cover sheet 302 covers the groove 304. Specifically, the cover sheet 302 can be bonded to the substrate 301 using a bonding process. The cover sheet 302 is used to perform ion exchange between the reference electrolyte and the solution to be tested, thereby realizing the function of the liquid sensor to perform detection. Among them, the solution to be tested is a solution detected by a semiconductor field effect transistor liquid sensor.

[0046] It can be seen that the present application forms a highly integrated microfluidic structure 300 by utilizing a substrate 301 including a groove 304, a reference electrode 303 covering the side wall of the groove 304, and a cover sheet 302 sealing a reference electrolyte. The microfluidic structure 300 and the semiconductor field effect transistor 200 are integrated on the same substrate 100, further improving the integration level, thereby ultimately realizing the miniaturization of the semiconductor field effect transistor liquid sensor, thereby meeting the detection needs of various scenarios.

[0047] In an embodiment of the present application, when the semiconductor field effect transistor liquid sensor enters a sensing working state, the groove 304 includes a reference electrolyte, and a bias is set on the reference electrode 303, so that the reference electrolyte can be connected through the reference electrode 303. At this time, the solution to be tested affects the gate bias of the channel surface included in the semiconductor field effect transistor 200, so that the detection result is obtained according to the gate bias.

[0048] In the embodiment of the present application, considering the need to electrically extract the reference electrode 303, the reference electrode 303 not only covers the sidewalls of the groove 304, but also covers at least one side of the substrate 301 away from the substrate 100, that is, the reference electrode 303 covers the upper surface of the substrate 301. The cover sheet 302 exposes at least a portion of the reference electrode 303, which facilitates the electrical extraction of the reference electrode 303. Figure 1 and Figure 2 shown.

[0049] refer to Figure 2 As shown, the reference electrode 303 not only covers the sidewalls of the groove 304, but also covers the bottom of the groove 304, so that the reference electrode 303 and the reference electrolyte can be more fully contacted, thereby ensuring the electrical connection effect. The reference electrode 303 covers a larger area of ​​the upper surface of the substrate 301, which can facilitate the electrical extraction of the reference electrode 303.

[0050] When the reference electrode 303 is electrically led out, the reference electrode 303 can be electrically connected to the conductive pad 306 using the conductive structure 305 , wherein the conductive pad 306 is disposed on one side surface of the substrate 100 , specifically, the conductive pad 306 is disposed on the upper surface of the substrate 100 .

[0051] Specifically, the conductive structure 305 may be a bump, solder, conductive glue or metal wire. In order to prevent the conductive structure 305 or the conductive pad 306 from being damaged or destroyed during testing, the conductive structure 305 and the conductive pad 306 may be surrounded by glue 307, thereby protecting the conductive structure 305 and the conductive pad 306. In addition, the glue 307 also covers at least a portion of the reference electrode 303 connected to the conductive structure 305, so as to protect the portion where the conductive structure 305 and the reference electrode 303 are connected, and reduce the influence of the outside world on the electrical connection.

[0052] Considering that the electrodes of the semiconductor field effect transistor 200 also need to be electrically led out, the electrodes can also be electrically connected through the conductive structure 305 and the conductive pad 306, and the conductive structure 305 and the conductive pad 306 can also be surrounded by glue 307. Figure 3 shown.

[0053] In the embodiment of the present application, the material of the substrate 301 may be an organic polymer material, which has price advantages and performance advantages.

[0054] As an example, the material of the substrate 301 may be polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), cycloolefin copolymer (COC), polyethylene terephthalate (PET), polycarbonate (PC), polyimide (PI) or polystyrene (PS).

[0055] The material of the cover sheet 302 may be selected to have an ion exchange function, so that the cover sheet 302 can perform the ion exchange between the reference electrolyte and the solution to be tested.

[0056] As an example, the material of the cover sheet 302 may be polyvinyl chloride (PVC) or porous ceramics.

[0057] That is to say, the materials included in the microfluidic structure 300 are easy to obtain, and have high compatibility with the semiconductor field effect transistor 200. The process for manufacturing the microfluidic structure 300 is also relatively simple and low in cost. In addition, the replenishment of the reference electrolyte can be achieved through the cover 302 included in the microfluidic structure 300, which can increase the service life of the semiconductor field effect transistor liquid sensor. Since the microfluidic structure 300 includes a reference electrode 303, the reference electrode 303 is integrated into the fixed structure without additionally increasing the size of the semiconductor field effect transistor liquid sensor. In addition, since the microfluidic structure 300 includes a cover 302, it can also realize ion exchange between the reference electrolyte and the solution to be tested, thereby realizing the detection function.

[0058] The highly integrated microfluidic structure 300 and the semiconductor field effect transistor 200 are arranged on the same substrate 100, further improving the integration. In addition, the substrate 100 can also be a flexible material, and the semiconductor field effect transistor liquid sensor can be applied to application scenarios such as human wear, robot bionics, and animal behavior tracking tags.

[0059] As an example, semiconductor field effect transistors can be attached to shoes and socks, etc., and some health conditions can be analyzed by monitoring the ions in the sweat during human movement.

[0060] It can be seen that the present application forms a highly integrated microfluidic structure by utilizing a substrate including a groove, a reference electrode covering the sidewall of the groove, and a cover sheet sealing the reference electrolyte. The microfluidic structure and the semiconductor field effect transistor are integrated on the same substrate, thereby further improving the integration level, thereby ultimately realizing the miniaturization of the semiconductor field effect transistor liquid sensor, thereby meeting the detection needs of various scenarios.

[0061] Based on the semiconductor field effect transistor liquid sensor provided in the above embodiment, the embodiment of the present application also provides a method for manufacturing a semiconductor field effect transistor liquid sensor, and its working principle is described in detail below in conjunction with the accompanying drawings.

[0062] See also Figure 4 , which is a schematic flow chart of a method for manufacturing a semiconductor field effect transistor liquid sensor provided in an embodiment of the present application.

[0063] The method for manufacturing a semiconductor field effect transistor liquid sensor provided in the embodiment of the present application comprises the following steps:

[0064] S101, forming a substrate including grooves by using a 3D printing process or a demolding process.

[0065] In an embodiment of the present application, a groove may be formed in the substrate so that a reference electrolyte is placed in the groove. Specifically, the substrate including the groove may be formed by a 3D printing process or a demoulding process.

[0066] When the demolding process forms a substrate including a groove, the specific steps of the demolding process may be different if the substrate is made of different materials:

[0067] As a possible implementation, the material of the substrate is PMMA, and the PMMA is heated, a positive mold is placed on the PMMA in a heat-insulating state to apply pressure, and the mold is peeled off after solidification to obtain a substrate including grooves.

[0068] As another possible implementation method, a photoresist is spin-coated on the surface of the mold using a coating machine, and then a photomask is used as a mask for exposure and development to pattern the photoresist, and then a positive mold is formed by photolithography and etching on the mold. Liquid PMMA, PDMS, COC, PET, PC, PI or PS is poured or applied on the positive mold, and after the PMMA, PDMS, COC, PET, PC, PI or PS is cured, it is peeled off and demoulded to form a groove on the substrate.

[0069] S102, forming a reference electrode at least on a sidewall of the trench.

[0070] In an embodiment of the present application, after forming a substrate including a groove, a reference electrode can be formed at least on the side wall of the groove using a sputtering process or an electron beam evaporation process, that is, the reference electrode at least covers the side wall of the groove, so that when a reference electrolyte is set in the groove, the reference electrode located on the side wall of the groove can contact the reference electrolyte.

[0071] The reference electrode is prepared by sputtering process, which has high reliability and can improve the service life of the semiconductor field effect transistor liquid sensor.

[0072] S103, bonding the cover sheet and the substrate, so that the substrate, the reference electrode and the cover sheet form a microfluidic channel structure.

[0073] In the embodiments of the present application, the substrate can be covered with a cover sheet. Specifically, the cover sheet and the substrate can be bonded, the cover sheet is arranged on a side surface of the substrate away from the base plate, and the cover sheet covers the groove. The cover sheet is used for ion exchange between the reference electrolyte and the solution to be tested. The substrate, the reference electrode and the cover sheet constitute a microchannel structure.

[0074] S104, disposing a microchannel structure and a semiconductor field effect transistor on one side surface of the substrate.

[0075] In an embodiment of the present application, after the microfluidic structure is manufactured, the semiconductor field effect transistor and the microfluidic structure can be arranged on one side surface of the substrate, that is, the microfluidic structure and the semiconductor field effect transistor are integrated on the same substrate.

[0076] It can be seen that the manufacturing method of the semiconductor field effect transistor liquid sensor provided in the embodiment of the present application realizes the replacement and replenishment of the reference electrolyte by manufacturing a microchannel structure with an integrated reference electrode. In addition, the manufacturing process cost of the microchannel structure is low, and it is highly compatible with the semiconductor field effect transistor liquid sensor. The high-reliability reference electrode is prepared by sputtering through micro-nano thin film processing technology, thereby improving the service life of the semiconductor field effect transistor liquid sensor. In addition, the semiconductor field effect transistor liquid sensor can be externally connected to an electrical analysis and display system, and is used in portable wearable and biological intelligent monitoring related fields.

[0077] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the method embodiment, since it is basically similar to the structural embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0078] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. A semiconductor field effect transistor liquid sensor, characterized in that: The semiconductor field effect transistor liquid sensor comprises: a substrate, a semiconductor field effect transistor and a microchannel structure; The semiconductor field effect transistor and the microchannel structure are arranged on one side surface of the substrate, the microchannel structure with high integration and the semiconductor field effect transistor are arranged together on the same substrate, and the substrate is a flexible material; The microfluidic structure comprises a substrate, a reference electrode and a cover sheet; the substrate comprises a groove, the reference electrode at least covers the side wall of the groove, and the groove is used to place a reference electrolyte; the cover sheet is arranged on a side surface of the substrate away from the base, the cover sheet covers the groove, and the cover sheet is used to perform ion exchange between the reference electrolyte and the solution to be tested; The reference electrode also covers a surface of the substrate that is away from the base plate, and the cover sheet at least exposes a partial area of ​​the reference electrode.

2. The semiconductor field effect transistor liquid sensor according to claim 1, characterized in that: The reference electrode is electrically connected to a conductive pad using a conductive structure, and the conductive pad is disposed on one side surface of the substrate.

3. The semiconductor field effect transistor liquid sensor according to claim 2, characterized in that: The conductive structure and the conductive pad are surrounded by glue dots, and the glue dots at least cover a partial area of ​​the reference electrode connected to the conductive structure.

4. The semiconductor field effect transistor liquid sensor according to claim 2, characterized in that: The conductive structure is a bump, solder, conductive glue or metal welding wire.

5. The semiconductor field effect transistor liquid sensor according to any one of claims 1 to 4, characterized in that: The material of the substrate is an organic polymer material, and the material of the substrate is polymethyl methacrylate PMMA, polydimethylsiloxane PDMS, cycloolefin copolymer COC, polyethylene terephthalate PET, polycarbonate PC, polyimide PI or polystyrene PS.

6. The semiconductor field effect transistor liquid sensor according to any one of claims 1 to 4, characterized in that: The material of the cover plate is polyvinyl chloride (PVC) or porous ceramics.

7. A method for manufacturing a semiconductor field effect transistor liquid sensor, characterized in that: The method comprises: Using a 3D printing process or a demolding process to form a substrate including a groove, wherein the groove is used to place a reference electrolyte; forming a reference electrode at least on a sidewall of the trench; Bonding a cover sheet to the substrate, wherein the cover sheet is disposed on a surface of the substrate away from the base plate, the cover sheet covers the groove, and the cover sheet is used for ion exchange between the reference electrolyte and the solution to be tested; the substrate, the reference electrode and the cover sheet constitute a microchannel structure; The microfluidic structure and the semiconductor field effect transistor are arranged on one side surface of the substrate, and the microfluidic structure and the semiconductor field effect transistor with high integration are arranged together on the same substrate, and the substrate is a flexible material; The forming of the reference electrode at least on the sidewall of the trench comprises: forming a reference electrode at least on a sidewall of the trench by using a sputtering process or an electron beam evaporation process; The reference electrode also covers a surface of the substrate that is away from the base plate, and the cover sheet at least exposes a partial area of ​​the reference electrode.

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