Method and system for testing service life of power field effect transistor

Abstract

The invention relates to the technical field of semiconductor manufacturing, and provides a method and a system for testing the service life of a power field effect transistor. The method comprises the following steps: acquiring test environment parameter information of a to-be-tested power field effect transistor in a database; the test environment parameter information comprises a plurality of environment parameter sets; for each environmental parameter set, performing an electrical performance test on the to-be-tested power field effect transistor in a test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set; performing defect prediction on the to-be-tested power field effect transistor based on a preset defect prediction algorithm and the electrical performance parameter information to obtain defect prediction information; and predicting the service life of the power field effect transistor based on the defect prediction information. The method improves the accuracy of the life test result.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method and system for testing the service life of a power field effect transistor. Background Art

[0002] Power field effect tube is an important electronic component, which is widely used in power electronic equipment, such as switching power supply, DC converter, inverter, etc. The failure of power field effect tube often causes the instability of the whole equipment, seriously affecting the performance and safety of the equipment. Therefore, it is particularly important to accurately evaluate its service life.

[0003] When predicting the service life of a power field effect tube, the prior art usually predicts the service life of the power field effect tube under a single environmental state, while the power field effect tube usually works under variable environmental conditions. Therefore, the accuracy of the prior art in predicting the service life of the power field effect tube needs to be improved. Summary of the invention

[0004] The present application provides a method and system for testing the service life of a power field effect tube to solve the problems raised by the above-mentioned background technology.

[0005] In a first aspect, the present application provides a method for testing the service life of a power field effect tube, comprising: Acquire test environment parameter information of the power field effect transistor to be tested in a database; the test environment parameter information includes multiple environment parameter sets; For each of the environmental parameter sets, an electrical performance test is performed on the power field effect transistor to be tested in a test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set; Based on a preset defect prediction algorithm and each of the electrical performance parameter information, defect prediction is performed on the power field effect transistor to be tested to obtain defect prediction information; The service life of the power field effect transistor is predicted based on the defect prediction information.

[0006] In a possible implementation, performing an electrical performance test on the power field effect transistor to be tested in a test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set includes: Applying a gate voltage to the power field effect transistor in the test environment starting from an initial voltage value with a preset step voltage to a maximum voltage value, and obtaining a drain current and an on-resistance corresponding to each gate voltage; A first relationship curve between the gate voltage and the drain current is drawn based on the drain current corresponding to each of the gate voltages, and a second relationship curve between the gate voltage and the on-resistance is drawn based on the on-resistance corresponding to each of the gate voltages; wherein the abscissa of the first relationship curve is the gate voltage, and the ordinate is the drain current, and the abscissa of the second relationship curve is the gate voltage, and the ordinate is the on-resistance; A threshold voltage, a conductivity and a response voltage interval are obtained based on the first relationship curve, and a threshold resistance corresponding to the threshold voltage, a first resistance change coefficient corresponding to the conductivity and a second resistance change coefficient corresponding to the response voltage interval are obtained based on the second relationship curve; the threshold voltage, the conductivity, the response voltage interval, the threshold resistance, the first resistance change coefficient and the second resistance change coefficient constitute the electrical performance parameter information.

[0007] In a possible implementation, acquiring the threshold voltage, the conductivity, and the response voltage interval based on the first relationship curve, and acquiring the threshold resistance corresponding to the threshold voltage, the first resistance change coefficient corresponding to the conductivity, and the second resistance change coefficient corresponding to the response voltage interval based on the second relationship curve, includes: Analyzing the first relationship curve based on a preset elbow analysis algorithm to obtain a target point where the drain current begins to increase significantly, and determining that the gate voltage corresponding to the target point is the threshold voltage; subtracting the threshold voltage from the maximum voltage to obtain a first voltage difference, subtracting the drain current corresponding to the threshold voltage from the drain current corresponding to the maximum voltage to obtain a current difference, and dividing the current difference by the first voltage difference to obtain the transconductance; Determine a starting point on the first relationship curve where the drain current is not 0, and determine an interval between the gate voltage corresponding to the starting point and the initial voltage value as the response voltage interval; Determining, on the second relationship curve, an on-resistance corresponding to the threshold voltage as the threshold resistance; subtracting the threshold voltage from the maximum voltage to obtain a first voltage difference, subtracting the on-resistance corresponding to the threshold voltage from the on-resistance corresponding to the maximum voltage to obtain a first resistance difference, and dividing the first resistance difference by the first voltage difference to obtain the first resistance variation coefficient; The second resistance difference is obtained by subtracting the on-resistance corresponding to the initial voltage value from the on-resistance corresponding to the gate voltage corresponding to the starting point on the second relationship curve, and the second voltage difference is obtained by subtracting the initial voltage value from the gate voltage corresponding to the starting point, and the second resistance change coefficient is obtained by dividing the second resistance difference by the second voltage difference.

[0008] In a possible implementation, the defect prediction of the power field effect transistor to be tested is performed based on a preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information, including: Obtaining standard electrical performance parameter information and defect type information of the power field effect transistor to be tested in a database; wherein the defect type information includes an environmental parameter set corresponding to each defect type of the power field effect transistor to be tested, and for each defect type, the environmental parameter set corresponding to the defect type includes at least one; For each defect type, determine whether the defect type exists based on the standard electrical performance parameter information, each electrical performance parameter information, and the environmental parameter set corresponding to the defect type; if the defect type exists, determine that the defect type is an intermediate target defect type; each intermediate target defect type constitutes the defect prediction information.

[0009] In a possible implementation, judging whether the defect type exists based on the standard electrical performance parameter information, each of the electrical performance parameter information, and an environmental parameter set corresponding to the defect type includes: For each environmental parameter set corresponding to the defect type, determine the target electrical performance parameter information in each electrical performance parameter information; wherein the environmental parameter set corresponding to the target electrical performance parameter information is consistent with the environmental parameter set corresponding to the defect type; Respectively obtaining similarities between each of the target electrical performance parameter information and the standard electrical performance parameter information, and comparing each of the similarities with a preset similarity; If any of the similarities is smaller than the preset similarity, it is determined that the defect type exists.

[0010] In a possible implementation, the defect type information further includes a priority and a service life corresponding to each defect type, and the predicting the service life of the power field effect transistor based on the defect prediction information includes: The intermediate target defect type with the highest priority is determined as the target defect type, and the service life corresponding to the target defect type is determined as the service life of the power field effect transistor to be tested.

[0011] In a second aspect, the present application provides a service life test system for a power field effect tube, comprising: An acquisition module, used to acquire test environment parameter information of the power field effect transistor to be tested in a database; the test environment parameter information includes multiple environment parameter sets; A test module, for performing an electrical performance test on the power field effect transistor to be tested in a test environment corresponding to each of the environmental parameter sets, to obtain electrical performance parameter information corresponding to the environmental parameter set; A first prediction module, used to perform defect prediction on the power field effect transistor to be tested based on a preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information; The second prediction module is used to predict the service life of the power field effect tube based on the defect prediction information.

[0012] The present application provides a service life test method and system for power field effect tubes, wherein the method includes: obtaining test environment parameter information of the power field effect tube to be tested in a database; the test environment parameter information includes multiple environment parameter sets; for each of the environment parameter sets, the power field effect tube to be tested is tested in the test environment corresponding to the environment parameter set to obtain the electrical performance parameter information corresponding to the environment parameter set; based on a preset defect prediction algorithm and each of the electrical performance parameter information, the defect prediction is performed on the power field effect tube to be tested to obtain defect prediction information; based on the defect prediction information, the service life of the power field effect tube is predicted. This method, on the one hand, realizes a comprehensive evaluation of the power field effect tube to be tested under different working environments by obtaining multiple environmental parameter information in the database; on the other hand, through the combination of each electrical performance parameter information and the defect prediction algorithm, it realizes the effective identification of the potential defects of the power field effect tube under specific environmental conditions; on the other hand, the service life is predicted by the defect prediction information, which improves the accuracy of the service life prediction result. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0014] Figure 1 A schematic diagram of a flow chart of a method for testing the service life of a power field effect tube provided in an embodiment of the present application; Figure 2 A schematic block diagram of the structure of a service life test system for a power field effect tube provided in an embodiment of the present application; Figure 3 A schematic block diagram of the structure of a terminal device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0015] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0016] The flowcharts shown in the accompanying drawings are only examples and do not necessarily include all contents and operations / steps, nor must they be performed in the order described. For example, the operations / steps may also be decomposed, combined or partially merged, so the actual execution order may change based on actual conditions.

[0017] It should also be understood that the terms used in this application specification are only for the purpose of describing specific embodiments and are not intended to limit the application. As used in this application specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0018] It should be further understood that the term “and / or” used in the specification and appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0019] Power field effect tube is an important electronic component, which is widely used in power electronic equipment, such as switching power supply, DC converter, inverter, etc. The failure of power field effect tube often causes the instability of the whole equipment, seriously affecting the performance and safety of the equipment. Therefore, it is particularly important to accurately evaluate its service life.

[0020] When predicting the service life of a power field effect tube, the prior art usually predicts the service life of the power field effect tube under a single environmental state, while the power field effect tube usually works under variable environmental states. Therefore, the accuracy of the prior art in predicting the service life of the power field effect tube needs to be improved. To this end, the present application provides a method and system for testing the service life of a power field effect tube to solve the above problem.

[0021] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0022] See also Figure 1 , Figure 1 A schematic diagram of a process flow of a method for testing the service life of a power field effect tube provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, the service life testing method of a power field effect tube provided in an embodiment of the present application includes steps S1 to S4.

[0023] Step S1, obtaining test environment parameter information of a power field effect transistor to be tested from a database; the test environment parameter information includes a plurality of environment parameter sets.

[0024] Step S2: for each of the environmental parameter sets, perform an electrical performance test on the power field effect transistor to be tested in a test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set; Step S3, performing defect prediction on the power field effect transistor to be tested based on a preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information; Step S4: predicting the service life of the power field effect transistor based on the defect prediction information.

[0025] In this embodiment, as described in the above step S1, the test environment parameter information of the power field effect transistor to be tested is obtained in the database; the test environment parameter information includes multiple environment parameter sets. Specifically, the test environment parameter information is obtained in the database based on the identification code of the power field effect transistor to be tested; the database is provided with a corresponding relationship between the identification code and the test environment parameter information.

[0026] It should be noted that before the test environment parameter information is stored in the database, the test environment parameter information is generated based on the environment parameter information of the application scenario of the power field effect tube to be tested. Specifically, the environment parameter information of the application scenario of the power field effect tube to be tested is obtained, wherein the environment parameter information includes parameter threshold ranges corresponding to multiple types of environmental parameters; for each type of environmental parameter, multiple parameter values ​​are determined within the parameter threshold range corresponding to the environmental parameter with a preset step to obtain a parameter value set corresponding to the environmental parameter; Cartesian operations are performed on each of the parameter value sets to obtain the multiple environment parameter sets. It can be understood that the multiple environment parameter sets obtained by this method include environment parameter sets corresponding to multiple environmental states of the power field effect tube to be tested in actual application scenarios.

[0027] As described in the above step S2, in order to improve the accuracy of the test results of the service life of the power field effect tube, for each of the environmental parameter sets, the electrical performance test of the power field effect tube to be tested is performed in the test environment corresponding to the environmental parameter set to obtain the electrical performance parameter information corresponding to the environmental parameter set.

[0028] Specifically, in step S2, the gate, source and drain of the power field effect transistor to be tested are connected to the test pins of the test position, the test position is arranged in a closed shell, an environmental state regulating device is arranged in the closed shell, the environmental state regulating device is used to adjust the environmental state in the closed shell, the environmental state regulating device is controlled based on the environmental parameter set to adjust the environmental state in the closed shell, the electrical performance test of the power field effect transistor to be tested is performed in the test environment corresponding to the environmental parameter set, and the electrical performance parameter information corresponding to the environmental parameter set is obtained, including: applying a gate voltage to the power field effect transistor from an initial voltage value to a maximum voltage value with a preset step voltage in the test environment, and obtaining the drain current and on-resistance corresponding to each gate voltage; based on each of the gate voltages A first relationship curve between the gate voltage and the drain current is drawn based on the corresponding drain current, and a second relationship curve between the gate voltage and the on-resistance is drawn based on the on-resistance corresponding to each of the gate voltages; wherein the abscissa of the first relationship curve is the gate voltage, and the ordinate is the drain current, and the abscissa of the second relationship curve is the gate voltage, and the ordinate is the on-resistance; based on the first relationship curve, a threshold voltage, a conductivity, and a response voltage interval are obtained, and based on the second relationship curve, a threshold resistance corresponding to the threshold voltage, a first resistance change coefficient corresponding to the conductivity, and a second resistance change coefficient corresponding to the response voltage interval are obtained; the threshold voltage, the conductivity, the response voltage interval, the threshold resistance, the first resistance change coefficient, and the second resistance change coefficient constitute the electrical performance parameter information.

[0029] Among them, the method of obtaining the threshold voltage, the conductivity and the response voltage interval based on the first relationship curve, and obtaining the threshold resistance corresponding to the threshold voltage, the first resistance change coefficient corresponding to the conductivity and the second resistance change coefficient corresponding to the response voltage interval based on the second relationship curve, includes: analyzing the first relationship curve based on a preset elbow analysis algorithm to obtain a target point where the drain current begins to increase significantly, and determining that the gate voltage corresponding to the target point is the threshold voltage; subtracting the threshold voltage from the maximum voltage value to obtain a first voltage difference, and subtracting the drain current corresponding to the threshold voltage from the drain current corresponding to the maximum voltage value to obtain a current difference, and dividing the current difference by the first voltage difference to obtain the conductivity; determining the starting point where the drain current is not 0 on the first relationship curve, and determining the starting point The interval between the corresponding gate voltage and the initial voltage value is the response voltage interval; the on-resistance corresponding to the threshold voltage is determined on the second relationship curve as the threshold resistance; the first voltage difference is obtained by subtracting the threshold voltage from the maximum voltage value, and the first resistance difference is obtained by subtracting the on-resistance corresponding to the threshold voltage from the on-resistance corresponding to the maximum voltage value, and the first resistance variation coefficient is obtained by dividing the first resistance difference by the first voltage difference; the second resistance difference is obtained by subtracting the on-resistance corresponding to the initial voltage value from the on-resistance corresponding to the gate voltage corresponding to the starting point on the second relationship curve, and the second voltage difference is obtained by subtracting the initial voltage value from the gate voltage corresponding to the starting point, and the second resistance variation coefficient is obtained by dividing the second resistance difference by the second voltage difference. It can be understood that step S2 realizes the diversification of electrical performance parameter information by obtaining the threshold voltage, the conductance, the response voltage interval, the threshold resistance, the first resistance variation coefficient and the second resistance variation coefficient, which helps to improve the accuracy of the service life test results of the power field effect tube.

[0030] As described in the above step S3, in order to improve the accuracy of the test results of the service life of the power field effect tube, the defect prediction of the power field effect tube to be tested is performed based on the preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information. Specifically, the standard electrical performance parameter information and defect type information of the power field effect tube to be tested are obtained in the database; wherein the defect type information includes the environmental parameter set corresponding to each defect type of the power field effect tube to be tested, and for each of the defect types, the environmental parameter set corresponding to the defect type includes at least one; for each of the defect types, based on the standard electrical performance parameter information, each of the electrical performance parameter information, and the environmental parameter set corresponding to the defect type, it is determined whether the defect type exists, and if the defect type exists, it is determined that the defect type is an intermediate target defect type; each of the intermediate target defect types constitutes the defect prediction information.

[0031] Among them, the judging whether the defect type exists based on the standard electrical performance parameter information, each of the electrical performance parameter information, and the environmental parameter set corresponding to the defect type includes: for each environmental parameter set corresponding to the defect type, determining the target electrical performance parameter information in each of the electrical performance parameter information; wherein the environmental parameter set corresponding to the target electrical performance parameter information is consistent with the environmental parameter set corresponding to the defect type; respectively obtaining the similarity between each of the target electrical performance parameter information and the standard electrical performance parameter information, and comparing each of the similarities with a preset similarity; if any of the similarities is less than the preset similarity, it is determined that the defect type exists.

[0032] It should be noted that respectively obtaining the similarity between each target electrical performance parameter information and the standard electrical performance parameter information includes: inputting the target electrical performance parameter information into a preset electrical performance parameter feature extraction model to obtain a first feature vector, and inputting the standard electrical performance parameter information into the electrical performance parameter feature extraction model to obtain a second feature vector, and using the similarity between the first feature vector and the second feature vector as the similarity, and the electrical performance parameter feature extraction model is a pre-trained neural network model.

[0033] It should be noted that the environmental parameter set, priority and service life corresponding to each of the defect types are obtained by simulation technology. Specifically, a virtual power field effect tube of the power field effect tube to be tested is constructed; for each of the defect types, the defect type is set for the virtual power field effect tube, and the virtual power field effect tube is controlled to work in the environmental states corresponding to the environmental parameter sets mentioned in the above step S1, and the environmental parameter set corresponding to the environmental state in which the working state of the virtual power field effect tube is abnormal is determined as the environmental parameter set corresponding to the defect type; for each of the defect types, the defect type is set for the virtual power field effect tube, and the virtual power field effect tube is controlled to continue working in the environmental state corresponding to the specified environmental parameter set in each of the environmental parameter sets mentioned in the above step S1 until the virtual power field effect tube fails, and the continuous working time of the power field effect tube is determined as the service life corresponding to the defect type; the priority of each of the defect types is determined based on the service life corresponding to each of the defect types; wherein the priority corresponding to the defect type is negatively correlated with the service life of the defect type.

[0034] It should be noted that when the power field effect tube to be tested has only any one of the defect types, the working state of the power field effect tube to be tested will be abnormal in part or all of the environmental states corresponding to each environmental parameter set. The scheme of step S3 can achieve accurate positioning of the defect type of the power field effect tube to be tested, thereby improving the accuracy of the service life test results.

[0035] As described in the above step S4, the service life of the power field effect tube is predicted based on the defect prediction information. Specifically, the defect type information also includes the priority and service life corresponding to each defect type, and the service life of the power field effect tube is predicted based on the defect prediction information, including: determining the intermediate target defect type with the highest priority as the target defect type, and determining the service life corresponding to the target defect type as the service life of the power field effect tube to be tested.

[0036] The method provided in the embodiment of the present application, on the one hand, realizes a comprehensive evaluation of the power field effect tube to be tested under different working environments by acquiring a variety of environmental parameter information in the database; on the other hand, through the combination of various electrical performance parameter information and the defect prediction algorithm, it realizes the effective identification of potential defects of the power field effect tube under specific environmental conditions; on the other hand, the service life is predicted by the defect prediction information, thereby improving the accuracy of the service life prediction result.

[0037] See also Figure 2 , Figure 2The schematic block diagram of the structure of the service life test system 100 of the power field effect tube provided in the embodiment of the present application is as follows: Figure 2 As shown, a service life test system 100 for a power field effect tube includes: The acquisition module 110 is used to acquire the test environment parameter information of the power field effect transistor to be tested from the database; the test environment parameter information includes multiple environment parameter sets.

[0038] The testing module 120 is used to perform an electrical performance test on the power field effect transistor to be tested in a test environment corresponding to each of the environmental parameter sets, and obtain electrical performance parameter information corresponding to the environmental parameter set.

[0039] The first prediction module 130 is used to perform defect prediction on the power field effect transistor to be tested based on a preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information.

[0040] The second prediction module 140 is used to predict the service life of the power field effect transistor based on the defect prediction information.

[0041] It should be noted that technicians in the relevant technical field can clearly understand that for the convenience and simplicity of description, the specific working process of the system and each module described above can refer to the corresponding process in the aforementioned power field effect tube service life test method embodiment, and will not be repeated here.

[0042] The terminal device 200 provided in the above embodiment can be implemented in the form of a computer program. The computer program can be Figure 3 The system is run on the terminal device 200 shown.

[0043] See also Figure 3 , Figure 3 The terminal device 200 provided in the embodiment of the present application is a schematic block diagram of the structure, wherein the terminal device 200 includes a processor 201 and a memory 202, wherein the processor 201 and the memory 202 are connected via a system bus 203, wherein the memory 202 may include a non-volatile storage medium and an internal memory.

[0044] The non-volatile storage medium can store a computer program. The computer program includes program instructions, and when the program instructions are executed by the processor 201, the processor 201 can execute any of the above-mentioned service life test methods for power field effect transistors.

[0045] The processor 201 is used to provide computing and control capabilities to support the operation of the entire terminal device 200.

[0046] The internal memory provides an environment for the operation of the computer program in the non-volatile storage medium. When the computer program is executed by the processor 201, the processor 201 can execute any of the above-mentioned methods for testing the service life of the power field effect transistor.

[0047] Those skilled in the art will understand that Figure 3 The structure shown in the figure is only a block diagram of a partial structure related to the scheme of the present application, and does not constitute a limitation on the terminal device 200 involved in the scheme of the present application. The specific terminal device 200 may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0048] It should be understood that the processor 201 may be a central processing unit (CPU), and the processor 201 may also be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0049] In some embodiments, the processor 201 is used to run a computer program stored in the memory to implement the following steps: Acquire test environment parameter information of the power field effect transistor to be tested in a database; the test environment parameter information includes multiple environment parameter sets; For each of the environmental parameter sets, an electrical performance test is performed on the power field effect transistor to be tested in a test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set; Based on a preset defect prediction algorithm and each of the electrical performance parameter information, defect prediction is performed on the power field effect transistor to be tested to obtain defect prediction information; The service life of the power field effect transistor is predicted based on the defect prediction information.

[0050] It should be noted that technicians in the relevant field can clearly understand that for the convenience and simplicity of description, the specific working process of the terminal device 200 described above can refer to the corresponding process of the aforementioned power field effect tube service life test method, and will not be repeated here.

[0051] An embodiment of the present application also provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by one or more processors, the one or more processors implement the service life testing method of a power field effect transistor as provided in the embodiment of the present application.

[0052] The computer-readable storage medium may be an internal storage unit of the terminal device 200 in the aforementioned embodiment, such as a hard disk or memory of the terminal device 200. The computer-readable storage medium may also be an external storage device of the terminal device 200, such as a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), etc. equipped with the terminal device 200.

[0053] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A method for testing the service life of a power field effect tube, characterized in that: include: Acquire the test environment parameter information of the power field effect tube to be tested in the database; The test environment parameter information includes multiple environment parameter sets; For each of the environmental parameter sets, an electrical performance test is performed on the power field effect transistor to be tested in a test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set; Based on a preset defect prediction algorithm and each of the electrical performance parameter information, defect prediction is performed on the power field effect transistor to be tested to obtain defect prediction information; The service life of the power field effect transistor is predicted based on the defect prediction information.

2. The method for testing the service life of a power field effect tube according to claim 1, characterized in that: The electrical performance test of the power field effect transistor to be tested is performed in the test environment corresponding to the environmental parameter set to obtain electrical performance parameter information corresponding to the environmental parameter set, including: Applying a gate voltage to the power field effect transistor in the test environment starting from an initial voltage value with a preset step voltage to a maximum voltage value, and obtaining a drain current and an on-resistance corresponding to each gate voltage; A first relationship curve between the gate voltage and the drain current is drawn based on the drain current corresponding to each of the gate voltages, and a second relationship curve between the gate voltage and the on-resistance is drawn based on the on-resistance corresponding to each of the gate voltages; wherein the abscissa of the first relationship curve is the gate voltage, and the ordinate is the drain current, and the abscissa of the second relationship curve is the gate voltage, and the ordinate is the on-resistance; A threshold voltage, a conductivity and a response voltage interval are obtained based on the first relationship curve, and a threshold resistance corresponding to the threshold voltage, a first resistance change coefficient corresponding to the conductivity and a second resistance change coefficient corresponding to the response voltage interval are obtained based on the second relationship curve; the threshold voltage, the conductivity, the response voltage interval, the threshold resistance, the first resistance change coefficient and the second resistance change coefficient constitute the electrical performance parameter information.

3. The method for testing the service life of a power field effect tube according to claim 2, characterized in that: The acquiring the threshold voltage, the conductivity and the response voltage interval based on the first relationship curve, and acquiring the threshold resistance corresponding to the threshold voltage, the first resistance change coefficient corresponding to the conductivity and the second resistance change coefficient corresponding to the response voltage interval based on the second relationship curve, comprises: Analyzing the first relationship curve based on a preset elbow analysis algorithm to obtain a target point where the drain current begins to increase significantly, and determining that the gate voltage corresponding to the target point is the threshold voltage; subtracting the threshold voltage from the maximum voltage to obtain a first voltage difference, subtracting the drain current corresponding to the threshold voltage from the drain current corresponding to the maximum voltage to obtain a current difference, and dividing the current difference by the first voltage difference to obtain the transconductance; Determine a starting point on the first relationship curve where the drain current is not 0, and determine an interval between the gate voltage corresponding to the starting point and the initial voltage value as the response voltage interval; Determining, on the second relationship curve, an on-resistance corresponding to the threshold voltage as the threshold resistance; subtracting the threshold voltage from the maximum voltage to obtain a first voltage difference, subtracting the on-resistance corresponding to the threshold voltage from the on-resistance corresponding to the maximum voltage to obtain a first resistance difference, and dividing the first resistance difference by the first voltage difference to obtain the first resistance variation coefficient; The second resistance difference is obtained by subtracting the on-resistance corresponding to the initial voltage value from the on-resistance corresponding to the gate voltage corresponding to the starting point on the second relationship curve, and the second voltage difference is obtained by subtracting the initial voltage value from the gate voltage corresponding to the starting point, and the second resistance change coefficient is obtained by dividing the second resistance difference by the second voltage difference.

4. The method for testing the service life of a power field effect tube according to claim 1, characterized in that: The defect prediction of the power field effect transistor to be tested is performed based on the preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information, including: Obtaining standard electrical performance parameter information and defect type information of the power field effect transistor to be tested in a database; wherein the defect type information includes an environmental parameter set corresponding to each defect type of the power field effect transistor to be tested, and for each defect type, the environmental parameter set corresponding to the defect type includes at least one; For each defect type, determine whether the defect type exists based on the standard electrical performance parameter information, each electrical performance parameter information, and the environmental parameter set corresponding to the defect type; if the defect type exists, determine that the defect type is an intermediate target defect type; each intermediate target defect type constitutes the defect prediction information.

5. The method for testing the service life of a power field effect tube according to claim 4, characterized in that: The determining whether the defect type exists based on the standard electrical performance parameter information, each of the electrical performance parameter information, and the environmental parameter set corresponding to the defect type includes: For each environmental parameter set corresponding to the defect type, determine the target electrical performance parameter information in each electrical performance parameter information; wherein the environmental parameter set corresponding to the target electrical performance parameter information is consistent with the environmental parameter set corresponding to the defect type; Respectively obtaining similarities between each of the target electrical performance parameter information and the standard electrical performance parameter information, and comparing each of the similarities with a preset similarity; If any of the similarities is smaller than the preset similarity, it is determined that the defect type exists.

6. The method for testing the service life of a power field effect tube according to claim 4, characterized in that: The defect type information also includes the priority and service life corresponding to each defect type. The predicting the service life of the power field effect tube based on the defect prediction information includes: The intermediate target defect type with the highest priority is determined as the target defect type, and the service life corresponding to the target defect type is determined as the service life of the power field effect transistor to be tested.

7. A service life test system for a power field effect tube, characterized in that: include: An acquisition module is used to acquire the test environment parameter information of the power field effect transistor to be tested in the database; The test environment parameter information includes multiple environment parameter sets; A test module, for performing an electrical performance test on the power field effect transistor to be tested in a test environment corresponding to each of the environmental parameter sets, to obtain electrical performance parameter information corresponding to the environmental parameter set; A first prediction module, used to perform defect prediction on the power field effect transistor to be tested based on a preset defect prediction algorithm and each of the electrical performance parameter information to obtain defect prediction information; The second prediction module is used to predict the service life of the power field effect tube based on the defect prediction information.

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