Groove structure for enhancing hydrophilic bonding of semiconductor wafer and preparation method

By corroding grooves on the oxide layer of the semiconductor wafer to store bad gases, the problem of bubble generation during the hydrophilic bonding of the wafer is solved, and stronger bonding strength and higher fault tolerance are achieved.

CN119480655AActive Publication Date: 2025-02-18CHONGQING UNIV
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Patent Information

Application Number
CN202411503104.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-10-25
Publication Date
2025-02-18
Estimated Expiration
2044-10-25

AI Technical Summary

Technical Problem

During the hydrophilic bonding process of semiconductor wafers, the generation of bubbles causes debonding of the bonding interface, causing bonding failure, and as the wafer size increases, the bubble problem becomes more serious.

Method used

A groove structure is designed on the oxide layer to store the bad gas generated during the bonding process through the groove space, thereby reducing the bubble situation at the bonding interface. The method of preparing the structure includes preparing an oxide layer on the second semiconductor substrate, etching out grooves, performing surface activation treatment, bonding and performing an annealing process to enhance bonding strength.

Benefits of technology

Through the use of groove structure, the bubble situation at the bonding interface is significantly reduced, the contact between wafers is enhanced, the time required for annealing is shortened, and the fault tolerance and compatibility of bonding is improved.

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Abstract

The invention provides a groove structure for enhancing hydrophilic bonding of a semiconductor wafer and a preparation method. The groove structure comprises a first semiconductor substrate and a second semiconductor substrate, and an oxide layer is formed on the second semiconductor substrate; forming a groove in the oxide layer, wherein the groove penetrates through the oxide layer; in a vacuum environment, bonding the oxide layers on the first semiconductor substrate and the second semiconductor substrate to form a vacuum groove; and performing an annealing process to enhance the bonding strength. The groove structure is used for storing and discharging bad gases (water and hydrogen) generated in the hydrophilic bonding process of the semiconductor wafer, so that the effect of removing bubbles on a bonding interface is achieved, the situation of large-area bonding separation caused by gathering of the bubbles on the interface in the annealing process is avoided, the large-area effective bonding area is ensured, the bonding yield is increased, and the product quality is improved. The method has a wide application prospect in the field of wafer bonding.
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Citation Information

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