Wafer baking method and device

Abstract

The embodiment of the invention discloses a wafer baking method and device. The wafer baking device comprises a wafer bearing assembly, a baking assembly and a carrying assembly, the baking assembly comprises at least one pressure oven, and the pressure oven is configured to bake a wafer. According to the embodiment of the invention, the method comprises the steps: carrying out the positive and negative pressure oscillation adjustment of the pressure in a pressure oven in which a wafer is stored, extracting a large bubble from a packaging material, and enabling the large bubble which is not extracted to be divided into a plurality of small bubbles; then the temperature and the pressure in the pressure oven are adjusted and increased, so that the bubbles and the packaging material are softened, the movement rate of the bubbles is increased, and the preset pressure in the pressure oven is maintained to fully extrude the bubbles from the packaging material, or the bubbles are further scattered, so that the bubbles cannot form'holes' in the wafer; and the bubble content in the baked wafer meets the requirement.

Description

Technical Field

[0001] The present application relates to the field of wafer manufacturing technology, and in particular to a wafer baking method and device. Background Art

[0002] In the packaging process of semiconductor chips, in order to make the grains smaller, more multifunctional and meet the requirements of green manufacturing, the industry usually uses technologies such as wafer sealing / injection and stacking. However, the sealing / stacking materials will absorb or encapsulate water vapor, and produce volatile substances or generate bubbles during the process, which will affect the quality of subsequent products.

[0003] Currently, many manufacturers bake wafers to remove bubbles in chips and packaging materials. However, in the actual baking process, it is found that some bubbles cannot escape through the gap between the packaging material and the wafer, resulting in a large number of bubbles still existing in the wafer after baking. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a wafer baking method and device to solve the problem of incomplete bubble removal during wafer baking in the prior art.

[0005] In a first aspect, the present application provides a wafer baking method, comprising:

[0006] Perform a positive and negative pressure oscillation adjustment on the pressure in the pressure oven where the wafers are stored;

[0007] Raising the temperature and pressure in the pressure oven, during which, when the pressure in the pressure oven reaches a preset pressure, the pressure in the pressure oven is maintained;

[0008] The temperature in the pressure oven is lowered, and then the wafers in the pressure oven are taken out.

[0009] Based on the above-mentioned wafer baking method, the pressure in the pressure oven where the wafers are stored is first oscillated between positive and negative pressures, so as to extract large bubbles from the packaging material and differentiate the large bubbles that have not been extracted into several small bubbles; then the temperature and pressure in the pressure oven are increased to soften the bubbles and the packaging material and increase the movement rate of the bubbles to squeeze the bubbles out of the packaging material, or to further break up the bubbles so that they cannot form "voids" in the wafer, so that the bubble content in the wafer after baking meets the requirements.

[0010] In one or more embodiments of the wafer baking method described above, after the pressure in the pressure oven is subjected to a positive and negative pressure oscillation adjustment, the pressure in the pressure oven is increased to a preset pressure and maintained.

[0011] In one or more embodiments of the above-mentioned wafer baking method, after the pressure in the pressure oven is increased to a preset pressure and maintained, the temperature in the pressure oven is adjusted in stages.

[0012] In one or more embodiments of the above-mentioned wafer baking method, the segmented adjustment of the temperature in the pressure oven includes: when the pressure in the pressure oven rises to a preset pressure and is maintained, increasing the temperature in the pressure oven to a first preset temperature and maintaining it.

[0013] In one or more embodiments of the above-mentioned wafer baking method, after the temperature in the pressure oven is maintained at a first preset temperature for a preset time, the temperature in the pressure oven is gradually increased to a second preset temperature and maintained.

[0014] In one or more embodiments of the above-mentioned wafer baking method, the wafer is pre-processed before being placed in the pressure oven, and the pre-processing includes edge positioning of the wafer.

[0015] In one or more embodiments of the above-mentioned wafer baking method, a gas flow with a preset temperature and a preset pressure flows from at least one end and at least one side of the pressure oven toward the wafer to be baked.

[0016] In one or more embodiments of the above-mentioned wafer baking method, while lowering the temperature in the pressure oven, the pressure in the pressure oven continues to be maintained at a preset pressure.

[0017] In a second aspect, the present application provides a device based on the above-mentioned wafer baking method, comprising:

[0018] a wafer carrying assembly, the wafer carrying assembly being configured to carry a wafer;

[0019] a baking assembly, the baking assembly comprising at least one pressure oven configured to bake the wafers;

[0020] The transport assembly is configured to transport the wafer to a preset position.

[0021] In one or more embodiments of the above-mentioned wafer baking device, the wafer baking device further includes a pre-processing component, and the pre-processing component is configured to adjust the placement direction of the wafer;

[0022] and / or,

[0023] The wafer baking device further comprises a cooling component, wherein the cooling component is configured to cool the wafer after baking;

[0024] and / or,

[0025] The pressure oven comprises a pressure cavity, a baking cavity and a circulation component, wherein:

[0026] The baking cavity is disposed in the pressure cavity, a gap space is defined between the baking cavity and the pressure cavity, and the gap space and the inner space of the baking cavity together constitute an air flow passage;

[0027] The circulation component is configured to drive the gas in the pressure chamber to circulate in the gas flow passage;

[0028] A plurality of air flow channels are formed on at least one side of the baking cavity, and the gas can enter the inner space through the air flow channels when flowing through the gap space during the circulation process.

[0029] One or more of the above embodiments of the present application have at least one or more of the following beneficial effects:

[0030] First, the pressure in the pressure oven where the wafers are stored is oscillated between positive and negative pressures to extract large bubbles from the packaging material and differentiate the large bubbles that have not been extracted into several small bubbles. Then, the temperature and pressure in the pressure oven are increased to soften the bubbles and the packaging material, increase the movement rate of the bubbles, and maintain the preset pressure in the pressure oven to fully squeeze the bubbles out of the packaging material, or further break up the bubbles so that they cannot form "voids" in the wafer, so that the bubble content in the wafer after baking meets the requirements.

[0031] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The disclosure of the present application will become more easily understood with reference to the accompanying drawings. It is easy for those skilled in the art to understand that these drawings are only for illustrative purposes and are not intended to limit the scope of protection of the present application. In addition, similar numbers in the drawings are used to represent similar components, among which:

[0033] Figure 1 is a schematic structural diagram for illustrating a wafer baking device provided in an embodiment of the present application;

[0034] Figure 2 It is a schematic diagram of the structure of a pressure oven provided by the present application;

[0035] Figure 3 It is a structural schematic diagram for showing a baking cavity provided by the implementation of the present application;

[0036] Figure 4 yes Figure 3 The enlarged view of point A in the middle;

[0037] Figure 5 It is a schematic diagram of a process of a wafer baking method provided in an embodiment of the present application;

[0038] Figure 6 It is a schematic diagram of the pressure and temperature adjustment curve of a wafer baking method provided in an embodiment of the present application.

[0039] Description of reference numerals:

[0040] 1. Rack; 11. Wafer carrying assembly; 12. Pretreatment assembly; 2. Handling assembly; 3. Cooling assembly; 31. Cooling chamber; 4. Baking assembly; 41. Pressure oven; 411. Pressure chamber; 412. Opening; 413. Shielding member; 42. Baking chamber; 421. Inlet and outlet; 422. Flow shielding structure; 423. Drainage surface; 424. Partition plate; 425. Airflow channel; 5. Circulation assembly; 51. Heating element; 52. Fan; 6. Airflow passage; 61. Gap space. DETAILED DESCRIPTION

[0041] Some embodiments of the present application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the present application and are not intended to limit the protection scope of the present application.

[0042] As described in the background art, it is found that during the actual baking process, some bubbles cannot escape through the gaps in the packaging material, resulting in a large number of bubbles still existing on the wafer after baking.

[0043] Therefore, the present application creatively proposes a wafer baking method and device, which first performs a positive and negative pressure oscillation adjustment on the pressure in the pressure oven where the wafers are stored, so as to extract large bubbles from the packaging material and differentiate the large bubbles that have not been extracted into several small bubbles; then, the temperature and pressure in the pressure oven are increased to soften the bubbles and the packaging material, increase the movement rate of the bubbles, and maintain the preset pressure in the pressure oven to fully squeeze the bubbles out of the packaging material, or further break up the bubbles so that they cannot form "voids" in the wafer, so that the bubble content in the wafer after baking meets the requirements.

[0044] The present application will be described in detail below through specific embodiments.

[0045] Example 1

[0046] Reference Figures 1 to 4As shown, an embodiment of the present application provides a wafer baking device, which includes a wafer carrying component 11, a baking component 4 and a conveying component 2. The wafer carrying component 11 is configured to carry wafers, and the baking component 4 includes at least one pressure oven 41, which is configured to bake wafers; the conveying component 2 is configured to convey the wafer to a preset position.

[0047] It should be noted that the preset position may be any position to which the transport component 2 can be moved. In some examples, the transport component 2 may be a robotic arm, and the end of the robotic arm is a component dedicated to adsorbing or grabbing wafers.

[0048] In some examples, the wafer baking apparatus further includes a pre-processing component 12, and the pre-processing component 12 is configured to adjust the placement direction of the wafer.

[0049] It is understandable that after the wafer is placed on the pre-processing component 12, the pre-processing component 12 will align and center the wafer, generally by finding the edge or finding the Notch.

[0050] In some examples, the wafer baking apparatus further includes a cooling component 3, and the cooling component 3 is configured to cool the wafer after baking.

[0051] In this embodiment, the cooling component 3 includes a cooling chamber 31, and a carrier rack for placing wafers is provided in the cooling chamber 31. After the wafers are baked in the baking component 4, the transport component 2 is used to transport the baked wafers to the carrier rack in the cooling chamber 31 in sequence.

[0052] The cooling assembly 3 may be provided with two or more cooling chambers 31 , so that more wafers can be cooled simultaneously.

[0053] In this embodiment, the wafer baking device includes a frame 1, a wafer carrying component 11 is arranged on one side outside the frame 1, and a baking component 4, a cooling component 3, a pretreatment component 12 and a conveying component 2 are all arranged in the frame 1. Specifically, when baking the wafer, firstly, the conveying component 2 is used to take out the wafer at the wafer carrying component 11, and move it to the pretreatment component 12, and the pretreatment component 12 is used to align the wafer, and then the conveying component 2 is used to convey the pretreated wafer to the pressure oven 41 at the baking component 4, and then the wafer is started to be baked; after the wafer baking is completed, the conveying component 2 is used to convey the baked wafer to the cooling chamber 31 of the cooling component 3, and after the wafer is cooled, the conveying component 2 is used to convey the wafer to the initial wafer carrying component 11.

[0054] In this embodiment, there may be two or more wafer carrying assemblies 11 so as to place more wafers of the same type or different types. Wafers of different types may be placed on different wafer carrying assemblies 11 .

[0055] In some examples, reference Figures 2 to 4 As shown, the pressure oven 41 includes a pressure cavity 411, a baking cavity 42 and a circulation component 5, wherein the baking cavity 42 is arranged in the pressure cavity 411, and a gap space 61 is defined between the baking cavity 42 and the pressure cavity 411, and the gap space 61 and the internal space of the baking cavity 42 together constitute an air flow passage 6; the circulation component 5 is configured to drive the gas in the pressure cavity 411 to circulate in the air flow passage 6; a plurality of air flow channels 425 are opened on at least one side of the baking cavity 42, and the gas can enter the internal space through the air flow channels 425 when flowing through the gap space 61 during the circulation process.

[0056] Specifically, when removing "water vapor" and "voids" in the wafer, the circulation component 5 is used to introduce gas into the pressure chamber 411, and then the gas begins to flow in the air flow passage 6. When flowing through the air flow hole 425, due to the irregular movement of the gas, part of the gas will flow into the baking chamber 42 through the air flow hole 425, and the remaining part of the gas flows in the air flow passage 6 and enters the baking chamber 42, that is, part of the gas is "intercepted" by the air flow hole 425 and enters the baking chamber 42, so that the gas can flow to the wafer more evenly, thereby achieving uniform baking heating of the wafer in the baking chamber 42, so as to effectively remove the "water bubbles" and "voids" in the wafer.

[0057] In some examples, the pressure cavity 411 is cylindrical, the baking cavity 42 is rectangular, and the baking cavity 42 is coaxially arranged with the pressure cavity 411, so that the gas can flow evenly around the baking cavity 42. Of course, in other examples, the pressure cavity 411 can also be a polyhedral prism such as a triangular prism or a quadrangular prism, or a curved surface such as a sphere, or other irregular shapes, and the baking cavity 42 can also be a regular shape such as a cylinder, a sphere or a triangular prism, or other irregular shapes, as long as the positional relationship between the baking cavity 42 and the pressure cavity 411 can be satisfied, and the gas can flow evenly around the baking cavity 42.

[0058] It is understandable that, referring to Figure 2 As shown, the direction of the arrow is the flow direction of the gas, wherein the solid arrow represents the flow direction of the gas in the gas flow passage 6, and the dashed arrow represents the flow direction of the gas in the gas flow channel 425.

[0059] In some examples, the interior of the pressure cavity 411 is a space with an opening 412 at one end, and a shielding member 413 is provided at the opening 412 to flexibly open and close the interior space of the pressure cavity 411; in addition, in order to facilitate the flow of gas in the air flow passage 6, the baking cavity 42 is provided with an inlet and outlet 421 along its own axial direction and on one side close to the opening 412, so that gas can flow into the baking cavity 42 from the inlet and outlet 421.

[0060] It should be noted that, in this embodiment, the shielding member 413 is hinged to the pressure cavity 411, so that the shielding member 413 can close and open the pressure cavity 411. At the same time, two or more pressure ovens 41 can be arranged in the frame 1; specifically, the pressure ovens 41 are placed in the vertical direction. Since the shielding member 413 can rotate relative to the pressure cavity 411, the interval distance between the pressure ovens 41 in the vertical direction can be set to be smaller, thereby saving space inside the frame 1.

[0061] Furthermore, in some examples, the baking cavity 42 is provided with a plurality of flow shielding structures 422 on the outer side surface of the air flow duct 425. The flow shielding structures 422 are configured to change the flow direction of part of the gas so that part of the gas enters the baking cavity 42 through the air flow duct 425 close thereto. Along the circulation direction of the gas, the flow shielding structures 422 can gradually increase the amount of gas flowing into the baking cavity 42.

[0062] It should be noted that the circulation direction of the gas is generally a ring-shaped ring connected end to end. In the present embodiment, the flow shielding structure 422 is arranged on the outer side of a rectangular structure. Therefore, for the flow shielding structure 422, the circulation direction of the gas refers to a linear direction of the side where the flow shielding structure 422 is located, such as the length direction of the baking cavity 42.

[0063] Specifically, when the gas flows in the airflow passage 6, the flow shielding structure 422 allows part of the gas to flow into the baking chamber 42 through the airflow duct 425, and along the circulation direction of the gas, the flow shielding structure 422 closer to the opening 412 will cause more gas to flow into the baking chamber 42 through the airflow duct 425 close to the flow shielding structure 422, thereby partially offsetting the heat loss of the gas caused by the increase in the path, that is, by increasing the gas flow to balance the heat transferred to the wafer in the circulation direction of the gas, so as to further improve the uniformity of heating the wafer.

[0064] It is understandable that the flow shielding structures 422 can be arranged regularly on the outside of the baking cavity 42, such as being arranged at equal intervals along the circulation direction of the gas, or arranged irregularly, as long as the flow shielding structures 422 can gradually increase the amount of gas flowing into the baking cavity 42 along the circulation direction of the gas. In addition, when the flow shielding structures 422 are arranged at equal intervals along the linear direction, the flow shielding structures 422 can be arranged in multiple rows and columns, or in a single row and multiple columns.

[0065] In an alternative example, there is a preset angle between the flow shielding structure 422 and the outer side surface of the baking chamber 42 where it is located, and the preset angle gradually increases along the circulation direction of the gas, and the preset angle is an acute angle. By increasing the preset angle, the flow shielding structure 422 closer to the opening 412 can intercept more gas, so that the gas flow channels 425 at different distances from the opening 412 can flow into the gas with similar total heat, thereby achieving uniform heating of the wafer in the circulation direction of the gas (i.e., the axial direction of the baking chamber 42).

[0066] In another alternative example, the flow shielding structure 422 has a flow guide surface 423 on one side facing the baking chamber 42, and the area of ​​the flow guide surface 423 gradually increases along the circulation direction of the gas. By increasing the area of ​​the flow guide surface 423, the flow guide surface 423 can occupy a larger cross-section (along the radial direction of the pressure chamber 411) in the air flow passage 6, thereby allowing more gas to flow into the baking chamber 42 through the air flow duct 425 close to the flow guide surface 423, so that more gas can flow into the air flow duct 425 closer to the opening 412, thereby balancing the heat of the gas flowing into the air flow duct 425 at different positions, so as to achieve uniform heating of the wafer.

[0067] In some examples, along the circulation direction of the gas, the length of the flow shielding structure 422 gradually decreases, so as to balance the amount of gas flowing into the baking cavity 42 from the air flow channel 425 and from the opening 412 .

[0068] It should be noted that, refer to Figure 3 As shown, the direction indicated by the arrow Z represents the length direction of the flow shielding structure 422 .

[0069] Further, see Figures 2 to 4As shown, in some examples, the outer side of the baking cavity 42 having the air flow channel 425 is provided with a partition plate 424 extending along the gas circulation direction, and a gas space is formed between the partition plate 424 and the flow blocking structure 422, so that part of the gas enters the baking space through the air flow channel 425 at the gas space. Through the relatively independent gas space, after the gas flows into the gas space, the gas can be gradually diffused in the independent space, further increasing the amount of gas flowing into the baking cavity 42 from the air flow channel 425 at the gas space.

[0070] It is understandable that the number of the partition plates 424 can be one, two, three or more, and the user can adjust the number of the partition plates 424 according to actual needs, as long as they can form a relatively independent gas space corresponding to the flow-shielding structure 422.

[0071] In this embodiment, both sides of the partition plate 424 in the thickness direction are provided with flow shielding structures 422 , so that one partition plate 424 cooperates with two groups of flow shielding structures 422 , thereby saving the space occupied by the partition plate 424 .

[0072] In some examples, the flow shielding structure 422 is in the shape of a right-angled trapezoid, and the right-angled side of the flow shielding structure 422 is arranged on a side close to the partition plate 424. The above arrangement reduces the shielding of the flow shielding structure 422 from blocking the gas flowing along the air flow passage 6 into the baking cavity 42. Of course, the flow shielding structure 422 can also be arranged in other shapes, such as a prismatic plate, a rectangular plate, and the like.

[0073] In some examples, two opposite sides of the baking cavity 42 are respectively provided with a plurality of air flow channels 425. Of course, the baking cavity 42 can also be provided with more air flow channels 425 on its three sides, and the sides do not need to meet a specific relationship, and the user can adjust according to actual needs.

[0074] It is understandable that multiple wafers can be placed in the baking chamber 42, and the placement of the wafers can also be arranged according to actual needs, such as stacking multiple wafers at intervals to form a stack of wafers, and multiple stacks of wafers can be placed in the baking chamber 42. Generally, for cost and baking convenience considerations, only one stack of wafers will be placed in the baking chamber 42. In this embodiment, along the circulation direction of the gas, a plurality of air flow channels 425 are respectively opened on opposite sides of the baking chamber 42 perpendicular to the gas circulation direction, and the stacking direction of the wafers is perpendicular to the axial direction of the baking chamber 42, so that the gas can enter the baking chamber 42 evenly from both sides of the baking chamber 42, and further bake the wafers evenly.

[0075] In some examples, along the gas circulation direction, the air flow channels 425 are evenly spaced and arranged along a linear direction, so that the amount of gas entering the baking cavity 42 from different air flow channels 425 is relatively uniform.

[0076] In some examples, there are at least two rows of air flow channels 425 on each side, and there is a preset distance between each air flow channel 425 and the air flow channels 425 in an adjacent row in the height direction of the baking chamber 42. When the gas flows in the air flow passage 6, the "offset" setting between the air flow channels 425 in two adjacent rows increases the number of air flow channels 425 per unit area on the side of the baking chamber 42, thereby increasing the air intake per unit area on the side of the baking chamber 42, so as to improve the uniform baking efficiency of the wafers.

[0077] It is understandable that the gas introduced into the pressure chamber 411 by the circulation component 5 generally needs to meet a certain pressure and a certain temperature, and the time and frequency of gas introduction are selected according to actual needs, and parts are also required to make the fan 52 flow. There are many ways to control the pressure and temperature of the gas. In some examples, the circulation component 5 includes a heating element 51, a fan 52 and a pressure gas source provided in the pressure chamber 411. The pressure gas source introduces a gas with a certain pressure into the pressure chamber 411, and then the gas flows through the heating element 51 and is heated to a certain temperature, thereby achieving the temperature conditions for baking the wafer.

[0078] In this embodiment, the heating element 51 includes a plurality of heating rings, which are coaxially arranged with the baking cavity 42. Along the circulation direction of the gas, the orthographic projections of all the heating rings are distributed in a sleeve-shaped manner. In this embodiment, the heating rings of the inner circle and the heating rings of the outer circle are distributed at intervals in the circulation direction of the gas (the axial direction of the baking cavity 42), so that the gas can fully contact the heating element 51 in time and space, thereby ensuring the heating effect on the gas.

[0079] In some examples, reference Figure 2 As shown, the fan 52 is disposed between the baking cavity 42 and the heating element 51. Of course, the positional relationship between the fan 52 and the heating element 51 can also be adjusted according to actual needs.

[0080] Example 2

[0081] Corresponding to the above embodiment 1, refer to Figure 5 and Figure 6 As shown, the embodiment of the present application also provides a wafer baking method, the wafer baking method comprising:

[0082] S100, performing a positive and negative pressure oscillation adjustment on the pressure in the pressure oven where the wafers are stored;

[0083] It should be noted that the oscillation regulation of positive and negative pressure described in the present embodiment refers to limiting the range value of the oscillation regulation, rather than limiting the specific number of pressure changes in the oscillation regulation, that is, the pressure value of the oscillation regulation changes between positive and negative pressure, which includes one, two, three and more positive and negative pressure changes. Of course, it also includes one and a half, two and a half, and other positive and negative pressure changes containing incomplete change cycles. The specific number of positive and negative pressure changes is adjusted according to actual needs.

[0084] In addition, for some short-term constant pressures (positive pressure and / or negative pressure) maintained during oscillation regulation, they are still counted in one positive and negative pressure oscillation regulation. Pressure oscillation regulation generally includes positive pressure, negative pressure, and positive and negative pressure. Positive pressure means that the minimum pressure of oscillation regulation is greater than the ambient pressure (generally atmospheric pressure), and negative pressure means that the minimum pressure of oscillation regulation is less than the ambient pressure.

[0085] In this example, in order to make the pressure variation in the oscillation regulation regular, the pressure variation curve of the oscillation regulation is generally similar to a sine function curve.

[0086] In some examples, the wafers are pre-processed before being placed in the pressure oven 41. The pre-processing includes edge-finding and positioning the wafers so that the wafers entering the pressure oven 41 can be placed in the same orientation, thereby improving the uniformity of baking the wafers in the pressure oven 41. Of course, the pre-processing may also include other processing such as sorting the wafers to facilitate baking the wafers.

[0087] It should be noted that, refer to Figure 6 As shown, Figure 6 The X-axis represents the change in time, and the Y-axis represents the change in pressure or temperature. The Y-axis only represents the trend of the pressure or temperature change, and does not represent a definite value. In addition, Figure 6 The solid line curve P represents the pressure change curve in the pressure oven 41 , and the dotted line curve T represents the temperature change curve in the pressure oven 41 .

[0088] It is understandable that before placing the wafers into the pressure oven 41, the wafers need to be processed in some ways to improve the efficiency of wafer transportation and processing. First, some wafers need to be placed in some wafer containers, and then the wafer containers containing the wafers are placed on the wafer carrying assembly 11. Then, the wafers are taken out through the transport assembly 2, and then the wafers are transported to the pretreatment assembly 12, and the pretreatment assembly 12 is used to center the wafers; then, the pretreated wafers are placed into the pressure oven 41, and the pressure oven 41 is sealed by the shielding member 413 to ensure the baking effect.

[0089] Specifically, by repeatedly introducing positive and negative pressure airflows into the pressure oven 41 for a period of time, the bubbles in the wafer are continuously vibrated, thereby extracting large bubbles out of the packaging material and dividing the remaining large bubbles into several small bubbles for further removal of the bubbles later.

[0090] S200, raising the temperature and pressure in the pressure oven, during which, when the pressure in the pressure oven reaches a preset pressure, the pressure in the pressure oven is maintained;

[0091] It can be understood that increasing the temperature and pressure in the pressure oven 41 means that the pressure and temperature in the pressure oven 41 are on an upward trend compared with before, which includes some processes of constant temperature and pressure, variable temperature and pressure, constant temperature and pressure, and variable temperature and constant pressure, which are specifically set according to production requirements.

[0092] Specifically, after the pressure in the pressure oven is raised to a preset pressure and maintained until the baking is completed, the squeezing effect on the bubbles in the packaging material during the baking process can be maintained.

[0093] In some examples, after the pressure in the pressure oven is oscillated between positive and negative pressures, the temperature in the pressure oven is adjusted in stages to prevent the wafer from being deformed due to rapid heating.

[0094] It should be noted that because different materials are attached and arranged on the wafer, the heating conditions of the wafer are complicated. Therefore, if the temperature is quickly increased in a short period of time, the wafer will be heated unevenly.

[0095] It should be noted that when the pressure in the pressure oven 41 rises to the preset pressure and is maintained, nitrogen is generally introduced into the pressure oven 41 to remove oxygen in the pressure oven 41 to avoid oxidation of the wafer during the wafer baking process.

[0096] Furthermore, in some examples, the staged adjustment of the temperature in the pressure oven 41 includes: when the pressure in the pressure oven 41 rises to and maintains a preset pressure, the temperature in the pressure oven 41 is increased to and maintained at a first preset temperature.

[0097] Specifically, after the pressure in the pressure oven 41 is raised to a preset pressure and maintained, the temperature is raised to a first preset temperature and maintained, so that the packaging material is fully softened, and at the same time the volume of the bubbles is further compressed, and the movement rate of the bubbles is increased, so as to facilitate squeezing the bubbles out of the packaging material.

[0098] Further, in some examples, after the temperature in the pressure oven 41 is maintained at a first preset temperature for a preset time, the temperature in the pressure oven 41 is gradually increased to and maintained at a second preset temperature, thereby further softening the packaging material without deforming the wafer and increasing the movement rate of the bubbles, thereby further expelling the bubbles from the packaging material.

[0099] S300, lowering the temperature in the pressure oven, and then taking out the wafer in the pressure oven.

[0100] It is understandable that the temperature adjusted down in this step is only required to be sufficient to prevent the wafer from undergoing an oxidation reaction with oxygen in the environment after being taken out of the pressure oven 41 .

[0101] While lowering the temperature in the pressure oven 41 , the pressure in the pressure oven 41 may be maintained for a period of time to fully discharge bubbles in the wafer.

[0102] Alternatively, a preset valve is provided on the pressure oven 41, and the preset valve is configured to discharge the gas in the pressure oven. While lowering the temperature in the pressure oven 41, the gas pressure in the pressure oven can also be gradually reduced through the preset valve, so that after the pressure oven 41 is turned on, the gas pressure in the pressure oven 41 can be quickly made the same as the ambient pressure.

[0103] In some examples, after taking out the wafers from the pressure oven 41 , the wafers need to be cooled to prevent oxidation of the high-temperature wafers.

[0104] In some examples, in order to improve baking efficiency, multiple wafers are generally stacked and placed in the pressure oven 41 .

[0105] In some examples, air flow with a preset temperature and a preset pressure flows from at least one end and at least one side of the pressure oven 41 toward the wafers to be baked, thereby improving the uniformity of wafer baking.

[0106] In this embodiment, the interior of the pressure oven 41 is in a rectangular shape as a whole, the end portion refers to a side of the pressure oven 41 in the length direction, and the side portion refers to a side of the pressure oven 41 in the width direction.

[0107] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0108] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0109] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A wafer baking method, characterized in that: The wafer baking method comprises: Perform a positive and negative pressure oscillation adjustment on the pressure in the pressure oven where the wafers are stored; Raising the temperature and pressure in the pressure oven, during which, when the pressure in the pressure oven reaches a preset pressure, the pressure in the pressure oven is maintained; The temperature in the pressure oven is lowered, and then the wafers in the pressure oven are taken out.

2. The wafer baking method according to claim 1, characterized in that: After the pressure in the pressure oven is oscillated between positive and negative pressures, the temperature in the pressure oven is adjusted in stages.

3. The wafer baking method according to claim 2, characterized in that: The stepwise adjustment of the temperature in the pressure oven comprises: When the pressure in the pressure oven rises to a preset pressure and is maintained, the temperature in the pressure oven is raised to a first preset temperature and is maintained.

4. The wafer baking method according to claim 3, characterized in that: After the temperature in the pressure oven is maintained at the first preset temperature for a preset time, the temperature in the pressure oven is gradually increased to a second preset temperature and maintained.

5. The wafer baking method according to claim 1, characterized in that: Before placing the wafer into the pressure oven, the wafer is pre-processed, and the pre-processing includes edge-finding and positioning the wafer.

6. The wafer baking method according to claim 1, characterized in that: An air flow with a preset temperature and a preset pressure flows from at least one end and at least one side of the pressure oven toward the wafer to be baked.

7. The wafer baking method according to claim 1, characterized in that: While lowering the temperature in the pressure oven, the pressure in the pressure oven continues to be maintained at a preset pressure.

8. A wafer baking device, based on the wafer baking method according to any one of claims 1 to 7, characterized in that: The wafer baking device comprises: a wafer carrying assembly, the wafer carrying assembly being configured to carry a wafer; a baking assembly, the baking assembly comprising at least one pressure oven configured to bake the wafers; The transport assembly is configured to transport the wafer to a preset position.

9. The wafer baking device according to claim 8, characterized in that: The wafer baking device further includes a pre-processing component, and the pre-processing component is configured to adjust the placement direction of the wafer; and / or, The wafer baking device further comprises a cooling component, wherein the cooling component is configured to cool the wafer after baking; and / or, The pressure oven comprises a pressure cavity, a baking cavity and a circulation component, wherein: The baking cavity is disposed in the pressure cavity, a gap space is defined between the baking cavity and the pressure cavity, and the gap space and the inner space of the baking cavity together constitute an air flow passage; The circulation component is configured to drive the gas in the pressure chamber to circulate in the gas flow passage; A plurality of air flow channels are formed on at least one side of the baking cavity, and the gas can enter the inner space through the air flow channels when flowing through the gap space during the circulation process.

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