A dual temperature control semiconductor heating plate and temperature control method

Abstract

The present invention relates to the field of semiconductor processing technology, and discloses a dual-temperature-controlled semiconductor heating plate and a temperature control method. The present invention centrally heats the heating position of the semiconductor material to be heated through a centralized heating plate with the assistance of a uniform heating plate, and can quickly heat the heating position of the semiconductor material to be heated to a set temperature, and can also heat other positions of the semiconductor material to a certain extent through the setting of the uniform heating plate, and the insulation setting of the insulation component can avoid the temperature loss of the heating position of the heated semiconductor material during the transportation process after heating, and can fully ensure that the temperature during the later processing meets the required temperature, and can also effectively avoid the conventional heating means, which needs to be heated to a temperature exceeding the later processing temperature to cover the heat lost during the transportation process, which easily causes the problem of overheating and damage of the semiconductor material.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a dual-temperature-controlled semiconductor heating plate and a temperature control method. Background Art

[0002] Semiconductor heating plates are one of the indispensable equipment in the semiconductor manufacturing process. They are mainly used to heat wafers during the wafer processing stage to ensure process consistency and improve product quality. The basic functions of the heating plate include heating the wafer to the required temperature, maintaining temperature stability, and ensuring that the wafer reaches the predetermined temperature conditions in different processing steps. This is especially important for key process steps such as chemical vapor deposition (CVD), photolithography, annealing, etc.

[0003] Existing semiconductor heating plates are mostly used for overall heating, while in the actual semiconductor production process, semiconductor components are mostly heated locally to meet local heating temperature requirements. In addition, since the semiconductor components need to be transferred to the next part for processing after heating, conventional heating methods need to heat to a temperature exceeding the later processing temperature to cover the heat lost by the semiconductor components during transportation. The existing semiconductor heating plates and temperature control methods have unstable temperature control, which can easily lead to excessive heating of semiconductor components, and then easily cause overheating and damage of semiconductor components. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a dual-temperature-controlled semiconductor heating plate and a temperature control method.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0006] A dual-temperature-controlled semiconductor heating plate, comprising: a shielding fixed platform, a uniform heating plate is arranged on the top of the shielding fixed platform, a centralized heating plate is arranged inside the shielding fixed platform and below the uniform heating plate, a centralized driving mechanism is arranged inside the shielding fixed platform and below the centralized heating plate, and the centralized driving mechanism can drive the centralized heating plate to move below the uniform heating plate; the shielding fixed platform is arranged inside a mounting shell, a grabbing and transferring mechanism is arranged on the top of the mounting shell, a fixed chuck is arranged on the upper surface of the uniform heating plate, the grabbing and transferring mechanism can grab a heating carrier plate and move it, and a semiconductor material to be heated is placed inside the heating carrier plate; the grabbing and transferring mechanism can move the heating carrier plate from a feeding position to the inside of the fixed chuck, and the grabbing and transferring mechanism can also The heating carrier plate is moved from the inside of the fixed chuck to the discharge position; after the heating carrier plate and the semiconductor material to be heated contained in the heating carrier plate are placed in the inside of the fixed chuck, the centralized heating plate can be moved to the position directly below the heating position of the semiconductor material to be heated contained in the heating carrier plate under the drive of the centralized driving mechanism, the uniform heating plate can heat the entire semiconductor material to be heated, and the centralized heating plate can perform centralized heating on the heating position of the semiconductor material to be heated; a heat preservation component is arranged inside the heating carrier plate, the heat preservation component can move inside the heat preservation component to the position directly below the heating position along with the movement of the centralized heating plate, and the heat preservation component can keep the heating position of the semiconductor material warm after the heating carrier plate is removed from the inside of the fixed chuck.

[0007] Preferably, the uniform heating plate is provided with a support plate, an electric heating plate and a heat-conducting plate from top to bottom, the electric heating plate is provided with an electric heating wire inside, and the heat output by the electric heating plate to each position on the upper surface of the support plate is uniform; the bottom end of the heat-conducting plate can be fitted with the centralized heating plate, and the heat-conducting plate includes a heat insulation plate, and the heat insulation plate is provided with a plurality of fixed grooves, and a heat-conducting column is provided inside each of the fixed grooves; the heat of each heat-conducting column from the centralized heating plate can only be conducted along the heat-conducting column itself through the electric heating plate to the support plate.

[0008] Preferably, the fixed chuck is arranged on the upper surface of the supporting plate, and the fixed chuck includes a fixed positioning plate and a movable positioning plate, the movable positioning plate can approach and move away from the fixed positioning plate, and the movable area of ​​the movable positioning plate is maintained on the upper surface of the supporting plate.

[0009] Preferably, the centralized driving mechanism includes a driving guide rail, a driving turntable and a positioning rail, one end of the driving guide rail is fixed to the top end of the driving turntable, and a positioning slider is provided at the bottom end of the other end of the driving guide rail, and the positioning slider is embedded in the positioning rail; a servo motor is provided at the bottom end of the driving turntable, and the servo motor can drive the driving guide rail to rotate under the restriction of the positioning rail by driving the driving turntable to rotate; a mounting block is provided inside the driving guide rail, and the mounting block is fixed between the bottom end of the centralized heating plate, and the driving guide rail can drive the centralized heating plate to move along the restricted direction of the driving guide rail by driving the mounting block to move.

[0010] Preferably, the centralized heating plate comprises a high heat plate, a thermal insulation pad and a linkage electromagnet, the thermal insulation pad is arranged between the high heat plate and the linkage electromagnet, and the thermal insulation pad is used to block the heat of the high heat plate from being conducted to the linkage electromagnet; the top of the high heat plate can be fitted between the uniform heating plate, and the high heat plate can provide heat to the uniform heating plate.

[0011] Preferably, the shell of the heating carrier plate is made of heat-conductive material, and a containing groove is provided at the top of the heating carrier plate, and the semiconductor material to be heated can be accommodated in the containing groove; a vacuum cavity is provided inside the heating carrier plate, and the thermal insulation component is arranged inside the vacuum cavity, and the top and bottom of the thermal insulation component are respectively in contact with the top and bottom of the inner wall of the vacuum cavity for heat transfer.

[0012] Preferably, the shell of the insulation component is made of heat-conducting material, an insulation cavity is provided inside the insulation component, and an insulation liquid is provided inside the insulation cavity, and the insulation liquid can conduct heat to the outside through the shell of the insulation component; the insulation component is made of magnetic material, and during the movement of the linkage electromagnet, the linkage electromagnet generates a magnetic field after being energized, and the insulation component can move on a horizontal plane inside the vacuum cavity as the linkage electromagnet moves under the action of the magnetic field.

[0013] Preferably, the grabbing and transferring mechanism includes a grabbing guide rail, a telescopic grab rod and a pneumatic gripper, the fixed end of the telescopic grab rod is hoisted and arranged at the bottom end of the grabbing guide rail, and the pneumatic gripper is arranged at the movable end of the telescopic grab rod; the grabbing guide rail can drive the telescopic grab rod and the pneumatic gripper to move from the feeding position to the discharging position through the top of the fixed chuck to the discharging position, the telescopic grab rod can be retracted and extended at the feeding position, above the fixed chuck and at the discharging position, and the pneumatic gripper can grab and place the heating carrier plate at the feeding position, above the fixed chuck and at the discharging position.

[0014] Preferably, after the semiconductor material placed inside the heating carrier plate is heated, the telescopic grab rod is first retracted, and the pneumatic gripper grabs the heating carrier plate and moves it vertically upward until the linkage electromagnet is powered off and the insulation component is out of the influence range of the magnetic field of the linkage electromagnet, and then the grabbing guide rail drives the heating carrier plate to move laterally; after the heating carrier plate is moved out of the fixed chuck, the insulation component can insulate the heating position of the semiconductor material.

[0015] A temperature control method, using the above-mentioned dual temperature control semiconductor heating plate as a heating source, comprises the following steps:

[0016] First, preheat the uniform heating plate, and drive the centralized heating plate to move to the center position below the uniform heating plate through the centralized driving mechanism;

[0017] The heating carrier plate is moved from the feeding position to the inside of the fixed chuck by the grabbing and transferring mechanism, and then the centralized heating plate is driven by the centralized driving mechanism to move to the position directly below the heating position of the semiconductor material to be heated, and at the same time, the heat preservation component moves inside the heat preservation component to the position directly below the heating position along with the movement of the centralized heating plate;

[0018] The uniform heating plate heats the entire semiconductor material to be heated, and the centralized heating plate centrally heats the heating position of the semiconductor material to be heated until the heating position of the semiconductor material is heated to a set temperature;

[0019] After heating is completed, the grabbing and transferring mechanism moves the heating carrier plate from the inside of the fixed chuck to the discharge position, and the heat preservation component can keep the heating position of the semiconductor material warm after the heating carrier plate is moved out of the inside of the fixed chuck.

[0020] Compared with the prior art, the present invention provides a dual-temperature controlled semiconductor heating plate and a temperature control method, which have the following beneficial effects:

[0021] 1. This dual-temperature-controlled semiconductor heating plate, with the assistance of the uniform heating plate, centrally heats the heating position of the semiconductor material to be heated through the centralized heating plate until the heating position of the semiconductor material is heated to the set temperature; after the heating is completed, the grabbing and transferring mechanism moves the heating carrier plate from the inside of the fixed chuck to the discharge position, and the insulation component can insulate the heating position of the semiconductor material after the heating carrier plate is moved out of the fixed chuck, so that the heating position of the semiconductor material to be heated can be centrally heated by the centralized heating plate with the assistance of the uniform heating plate, and the heating position of the semiconductor material to be heated can be quickly heated to the set temperature, and other positions of the semiconductor material can be heated to a certain extent through the setting of the uniform heating plate, and the insulation setting of the insulation component can avoid the temperature loss of the heating position of the heated semiconductor material during the transportation process after heating, which can fully ensure that the temperature during the later processing meets the required temperature, and can also effectively avoid the conventional heating means, which needs to be heated to a temperature exceeding the later processing temperature to cover the heat lost during the transportation process, which is easy to cause the problem of overheating and damage of the semiconductor material.

[0022] 2. In this dual-temperature-controlled semiconductor heating plate, the insulation component moves inside the insulation component as the centralized heating plate moves to just below the heating position. The heat generated by the high-heat plate of the centralized heating plate can be transferred to a number of heat-conducting columns just below the heating position of the semiconductor material, and is transferred along the heat-conducting columns themselves through the electric heating plate to the supporting plate to the insulation component, and then continues to be directly transferred upward along the insulation component just below the heating position of the semiconductor material inside the vacuum chamber to the heating position of the semiconductor material, effectively transferring the heat generated by the centralized heating plate directly to the heating position of the semiconductor material, thereby more quickly heating the heating position of the semiconductor material to the set temperature, and under the action of the insulation liquid provided inside the insulation chamber, the insulation component can keep the heating position of the semiconductor material warm after the heating carrier plate is moved out of the fixed chuck, thereby effectively avoiding the temperature loss of the heating position of the semiconductor material during the transfer process, and more effectively ensuring that the temperature during later processing meets the required temperature.

[0023] 3. This dual-temperature controlled semiconductor heating plate transfers the heating carrier plate through a grabbing and transferring mechanism, so that after the semiconductor material is placed inside the heating carrier plate and heated, the telescopic grab rod contracts first, and the pneumatic gripper grabs the heating carrier plate and moves it vertically upward until the linkage electromagnet is powered off and the thermal insulation component is out of the influence range of the magnetic field of the linkage electromagnet. Then, the grabbing guide rail drives the heating carrier plate to move horizontally to avoid the influence of the magnetic field of the linkage electromagnet, which causes the thermal insulation component to move and leave the heating position of the semiconductor material. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1It is a three-dimensional structural schematic diagram of a mounting shell of a dual-temperature-controlled semiconductor heating plate of the present invention;

[0025] Figure 2 This is a schematic diagram of the internal structure of a mounting shell of a dual-temperature-controlled semiconductor heating plate of the present invention;

[0026] Figure 3 It is a partial structural schematic diagram of the interior of the installation shell of a dual-temperature-controlled semiconductor heating plate of the present invention;

[0027] Figure 4 It is a three-dimensional structural schematic diagram of a uniform heating plate, a centralized heating plate, a centralized driving mechanism and a shielding fixing platform of a dual temperature-controlled semiconductor heating plate of the present invention;

[0028] Figure 5 It is a schematic diagram of the assembly structure of a uniform heating plate, a centralized heating plate, a centralized driving mechanism and a shielding fixing platform of a dual temperature-controlled semiconductor heating plate of the present invention;

[0029] Figure 6 It is a schematic diagram of the internal structure of a heating carrier plate of a dual-temperature-controlled semiconductor heating plate of the present invention;

[0030] Figure 7 It is a three-dimensional structural schematic diagram of a uniform heating plate, a centralized heating plate and a centralized driving mechanism of a dual temperature-controlled semiconductor heating plate of the present invention;

[0031] Figure 8 It is a schematic diagram of the assembly structure of a uniform heating plate, a centralized heating plate and a centralized driving mechanism of a dual temperature-controlled semiconductor heating plate of the present invention;

[0032] Fig. 9 For the present invention Figure 8 A magnified view of part A.

[0033] In the figure: 1. Shielding fixing table; 2. Uniform heating plate; 21. Support plate; 22. Electric heating plate; 23. Heat conducting plate; 231. Heat insulation board; 232. Fixed groove; 233. Heat conducting column; 3. Centralized heating plate; 31. High heat plate; 32. Heat insulation pad; 33. Linkage electromagnet; 4. Centralized driving mechanism; 41. Driving guide rail; 411. Positioning slider; 412. Mounting block; 42. Driving turntable; 43. Positioning track; 44. Servo motor; 5. Mounting shell; 6. Grasping and transferring mechanism; 61. Grasping guide rail; 62. Telescopic grab bar; 63. Pneumatic gripper; 7. Fixed chuck; 71. Fixed positioning plate; 72. Movable positioning plate; 8. Heating carrier plate; 81. Insulation component; 811. Insulation cavity; 82. Holding groove; 83. Vacuum cavity. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] As introduced in the background technology, there are deficiencies in the prior art. In order to solve the above technical problems, the present application proposes a dual-temperature-controlled semiconductor heating plate and a temperature control method.

[0036] Embodiment 1

[0037] Please refer to Figure 1-Figure 9 A dual-temperature-controlled semiconductor heating plate comprises: a shielding fixed platform 1, a uniform heating plate 2 is arranged on the top of the shielding fixed platform 1, a concentrated heating plate 3 is arranged inside the shielding fixed platform 1 and below the uniform heating plate 2, a concentrated driving mechanism 4 is arranged inside the shielding fixed platform 1 and below the concentrated heating plate 3, and the concentrated driving mechanism 4 can drive the concentrated heating plate 3 to move under the uniform heating plate 2; the shielding fixed platform 1 is arranged inside the installation shell 5, and a grabbing and transferring mechanism 6 is arranged on the top of the installation shell 5, and a fixed chuck 7 is arranged on the upper surface of the uniform heating plate 2, and the grabbing and transferring mechanism 6 can grab the heating carrier plate 8 to move, and the semiconductor material to be heated is placed inside the heating carrier plate 8; the grabbing and transferring mechanism 6 can move the heating carrier plate 8 from the feeding position to the inside of the fixed chuck 7, and the grabbing and transferring mechanism 6 can also The heating carrier plate 8 can be moved from the fixed chuck 7 to the discharge position; after the heating carrier plate 8 and the semiconductor material to be heated contained in the heating carrier plate 8 are placed in the fixed chuck 7, the centralized heating plate 3 can be moved to the position directly below the heating position of the semiconductor material to be heated contained in the heating carrier plate 8 under the drive of the centralized driving mechanism 4, the uniform heating plate 2 can heat the semiconductor material to be heated as a whole, and the centralized heating plate 3 can perform centralized heating on the heating position of the semiconductor material to be heated; a heat preservation component 81 is arranged inside the heating carrier plate 8, and the heat preservation component 81 can move inside the heat preservation component 81 to the position directly below the heating position as the centralized heating plate 3 moves, and the heat preservation component 81 can keep the heating position of the semiconductor material warm after the heating carrier plate 8 is removed from the fixed chuck 7.

[0038] During specific use, it is necessary to place the semiconductor material (wafer, etc.) to be heated inside the heating carrier plate 8 in advance (the size of the heating carrier plate 8 is adjusted according to the semiconductor material to be heated), and then place several heating carrier plates 8 in batches at the feeding position of the mounting shell 5 (it can be inside or outside the mounting shell 5, and a transfer mechanism can be provided to circulate and transfer the heating carrier plate 8 from the discharging position of the mounting shell 5), and the grabbing and transferring mechanism 6 moves the heating carrier plate 8 from the feeding position to the inside of the fixed chuck 7, and then the semiconductor material to be heated is heated as a whole by the uniform heating plate 2, and the centralized heating plate 3 is driven by the centralized driving mechanism 4 to be directly below the heating position of the semiconductor material to be heated placed inside the heating carrier plate 8, and with the assistance of the uniform heating plate 2, the heating position of the semiconductor material to be heated is centrally heated by the centralized heating plate 3 until the heating position of the semiconductor material is heated to the set temperature (the set temperature is determined according to the specific heating position). Semiconductor material is adjusted); after heating is completed, the grabbing and transferring mechanism 6 moves the heating carrier plate 8 from the inside of the fixed chuck 7 to the discharge position, and the insulation component 81 can insulate the heating position of the semiconductor material after the heating carrier plate is moved out of the fixed chuck, so that the heating position of the semiconductor material to be heated can be centrally heated by the centralized heating plate 3 with the assistance of the uniform heating plate 2, and the heating position of the semiconductor material to be heated can be quickly heated to the set temperature, and other positions of the semiconductor material can be heated to a certain extent by the setting of the uniform heating plate 2, as well as the insulation setting of the insulation component 81, to avoid the temperature loss of the heating position of the heated semiconductor material during the transportation process after heating, which can fully ensure that the temperature during the later processing meets the required temperature, and can also effectively avoid the conventional heating means, which needs to be heated to a temperature exceeding the later processing temperature to cover the heat lost during the transportation process, which is easy to cause the problem of overheating and damage of the semiconductor material.

[0039] The uniform heating plate 2 is provided with a support plate 21, an electric heating plate 22 and a heat-conducting plate 23 from top to bottom. An electric heating wire is provided inside the electric heating plate 22. The heat outputted by the electric heating plate 22 to each position on the upper surface of the support plate 21 is uniform. The bottom end of the heat-conducting plate 23 can be fitted with the centralized heating plate 3. The heat-conducting plate 23 includes a heat insulation plate 231. The heat insulation plate 231 is provided with a plurality of fixed grooves 232. A heat-conducting column 233 is provided inside each fixed groove 232. The heat of each heat-conducting column 233 from the centralized heating plate 3 can only be conducted to the support plate 21 through the electric heating plate 22 along the heat-conducting column 233 itself.

[0040] The fixed chuck 7 is arranged on the upper surface of the supporting plate 21 , and the fixed chuck 7 includes a fixed positioning plate 71 and a movable positioning plate 72 . The movable positioning plate 72 can approach and move away from the fixed positioning plate 71 , and the movable area of ​​the movable positioning plate 72 is maintained on the upper surface of the supporting plate 21 .

[0041] Therefore, in actual use, the movable positioning disk 72 is first moved away from the fixed positioning disk 71 to the maximum position. After the heating carrier disk 8 is placed on the upper surface of the support disk 21, the movable positioning disk 72 moves toward the fixed positioning disk 71, so as to be able to fix the heating carrier disk 8 at a side position close to the fixed positioning disk 71, thereby ensuring the accuracy of positioning. Then, through the arrangement of the electric heating disk 22 and the support disk 21, the heat output by the electric heating disk 22 can be stably conducted to the heating carrier disk 8, and through the arrangement of each heat conducting column 233 and the heat insulating plate 231, it can be ensured that the heat from the concentrated heating disk 3 can only be conducted along the heat conducting column 233 itself through the electric heating disk 22 to the support disk 21, thereby ensuring the heating concentration of the concentrated heating disk 3, thereby being able to heat the heating position of the semiconductor material more accurately.

[0042] Embodiment 2

[0043] Please refer to Figure 2-Figure 9 , which is different from the above-mentioned embodiment, is that the centralized driving mechanism 4 comprises a driving guide rail 41, a driving turntable 42 and a positioning rail 43, one end of the driving guide rail 41 is fixed to the top of the driving turntable 42, and a positioning slider 411 is arranged at the bottom of the other end of the driving guide rail 41, and the positioning slider 411 is embedded in the positioning rail 43; a servo motor 44 is arranged at the bottom of the driving turntable 42, and the servo motor 44 can drive the driving turntable 42 to rotate and drive the driving guide rail 41 to rotate under the restriction of the positioning rail 43; a mounting block 412 is arranged inside the driving guide rail 41, and the mounting block 412 is fixed between the bottom end of the centralized heating disk 3, and the driving guide rail 41 can move by driving the mounting block 412 to drive the centralized heating disk 3 to move along the restricted direction of the driving guide rail 41.

[0044] The centralized heating plate 3 includes a high-heat plate 31, a thermal insulation pad 32 and a linkage electromagnet 33. The thermal insulation pad 32 is arranged between the high-heat plate 31 and the linkage electromagnet 33. The thermal insulation pad 32 is used to block the heat of the high-heat plate 31 from being transferred to the linkage electromagnet 33. The top of the high-heat plate 31 can fit between the uniform heating plate 2, and the high-heat plate 31 can provide heat to the uniform heating plate 2.

[0045] The shell of the heating carrier plate 8 is made of heat-conducting material, and a receiving groove 82 is provided at the top of the heating carrier plate 8, and the receiving groove 82 can accommodate the semiconductor material to be heated; a vacuum cavity 83 is provided inside the heating carrier plate 8, and the insulation component 81 is arranged inside the vacuum cavity 83, and the top and bottom of the insulation component 81 are respectively in contact with the top and bottom of the inner wall of the vacuum cavity 83 for heat transfer.

[0046] The shell of the insulation component 81 is made of heat-conducting material, and an insulation cavity 811 is arranged inside the insulation component 81. Insulation liquid is arranged inside the insulation cavity 811, and the insulation liquid can conduct heat to the outside through the shell of the insulation component 81; the insulation component 81 is made of magnetic material, and during the movement of the linkage electromagnet 33, the linkage electromagnet 33 generates a magnetic field after being energized. Under the action of the magnetic field, the insulation component 81 can move on the horizontal plane inside the vacuum cavity 83 along with the movement of the linkage electromagnet 33.

[0047] When in use, the servo motor 44 outputs rotation, driving the driving turntable 42 and the driving guide rail 41 fixed on the top of the driving turntable 42 to rotate under the restriction of the positioning rail 43, thereby driving the centralized heating disk 3 as a whole to rotate along with the rotation of the driving guide rail 41, and then the driving guide rail 41 moves through the driving mounting block 412, driving the centralized heating disk 3 to move along the restricted direction of the driving guide rail 41, so that the entire centralized heating disk 3 can be driven by the centralized driving mechanism 4, and can move under the uniform heating disk 2 to the heating position of the semiconductor material;

[0048] After the grabbing and transferring mechanism 6 moves the heating carrier plate 8 from the feeding position to the inside of the fixed chuck 7, the linkage electromagnet 33 is energized to generate a magnetic field. Then, the concentrated heating plate 3, under the drive of the centralized driving mechanism 4, traverses various positions below the uniform heating plate 2, and moves the insulation component 81 along with the concentrated heating plate 3 to the center position below the uniform heating plate 2. Then, the concentrated heating plate 3 is driven by the centralized driving mechanism 4 to be moved to the point directly below the heating position of the semiconductor material to be heated. At the same time, the insulation component 81 moves along with the movement of the concentrated heating plate 3 inside the insulation component 81 to the point directly below the heating position, so that the uniform heating plate 2 can heat the entire semiconductor material to be heated, and the concentrated heating plate 3 can heat the heating position of the semiconductor material to be heated, until the heating position of the semiconductor material is heated to the set temperature, wherein the heat generated by the high-heat plate 31 of the centralized heating plate 3 can be conducted to the heating position of the semiconductor material. The heat generated by the centralized heating disk 3 is directly transferred to the heating position of the semiconductor material through the shell of the heating support disk 8, thereby effectively transferring the heat generated by the centralized heating disk 3 directly to the heating position of the semiconductor material, thereby more quickly heating the heating position of the semiconductor material to the set temperature, and under the action of the insulation liquid provided in the insulation chamber 811, the insulation component 81 can insulate the heating position of the semiconductor material after the heating support disk 8 is removed from the fixed chuck 7, thereby effectively avoiding the temperature loss of the heating position of the semiconductor material during the transfer process, thereby more effectively ensuring that the temperature during later processing meets the required temperature.

[0049] Embodiment 3

[0050] Please refer to Figure 1-Figure 4 , Fig. 9 The difference from the above embodiment is that the grabbing and transferring mechanism 6 includes a grabbing guide rail 61, a telescopic grab rod 62 and a pneumatic grabber 63. The fixed end of the telescopic grab rod 62 is hoisted and arranged at the bottom end of the grabbing guide rail 61, and the pneumatic grabber 63 is arranged at the movable end of the telescopic grab rod 62; the grabbing guide rail 61 can drive the telescopic grab rod 62 and the pneumatic grabber 63 to move from the feeding position to the discharging position through the top of the fixed chuck 7, the telescopic grab rod 62 can be retracted at the feeding position, above the fixed chuck 7 and at the discharging position, and the pneumatic grabber 63 can grab and place the heating carrier plate 8 at the feeding position, above the fixed chuck 7 and at the discharging position.

[0051] After the semiconductor material placed inside the heating carrier plate 8 is heated, the telescopic grab rod 62 is first retracted, and the pneumatic gripper 63 grabs the heating carrier plate 8 and moves it vertically upward until the linkage electromagnet 33 is powered off and the insulation component 81 is out of the magnetic field influence range of the linkage electromagnet 33, and then the grabbing guide rail 61 drives the heating carrier plate 8 to move horizontally; after the heating carrier plate 8 is moved out of the fixed chuck 7, the insulation component 81 can insulate the heating position of the semiconductor material.

[0052] In actual use, the heating carrier plate 8 can be transported by the grabbing and transferring mechanism 6, so that after the semiconductor material is placed inside the heating carrier plate 8 and heated, the telescopic grab rod 62 is first contracted, and the pneumatic gripper 63 grabs the heating carrier plate 8 and moves vertically upward until the linkage electromagnet 33 is powered off and the insulation component 81 is out of the magnetic field influence range of the linkage electromagnet 33. Then, the grabbing guide rail 61 drives the heating carrier plate 8 to move horizontally to avoid the magnetic field influence of the linkage electromagnet 33 causing the insulation component 81 to move and leave the heating position of the semiconductor material; after the heating carrier plate 8 is moved out of the fixed chuck 7, the insulation component 81 can insulate the heating position of the semiconductor material, which can effectively ensure that the temperature during later processing meets the required temperature.

[0053] Embodiment 4

[0054] A temperature control method, using a dual temperature control semiconductor heating plate as a heating source as described in any one of the above-mentioned embodiments 1 to 3, comprises the following steps:

[0055] First, preheat the uniform heating plate 2, and drive the centralized heating plate 3 to move to the center position below the uniform heating plate 2 through the centralized driving mechanism 4;

[0056] The heating carrier plate 8 is moved from the feeding position to the inside of the fixed chuck 7 by the grabbing transfer mechanism 6, and the centralized driving mechanism 4 drives the centralized heating plate 3 to traverse various positions below the uniform heating plate 2, and moves the heat preservation component 81 with the centralized heating plate 3 to the central position below the uniform heating plate 2;

[0057] Then, the centralized driving mechanism 4 drives the centralized heating plate 3 to move to the position directly below the heating position of the semiconductor material to be heated, and at the same time, the heat preservation component 81 moves inside the heat preservation component 81 to the position directly below the heating position as the centralized heating plate 3 moves.

[0058] The uniform heating plate 2 heats the entire semiconductor material to be heated, and the centralized heating plate 3 centrally heats the heating position of the semiconductor material to be heated until the heating position of the semiconductor material is heated to a set temperature;

[0059] After heating is completed, the grabbing and transferring mechanism 6 moves the heating carrier plate 8 from the fixed chuck 7 to the discharge position. The heat preservation component 81 can keep the heating position of the semiconductor material warm after the heating carrier plate 8 is moved out of the fixed chuck 7 .

[0060] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A dual temperature controlled semiconductor heating plate, characterized in that: include: A shielding fixed platform, wherein a uniform heating plate is arranged on the top of the shielding fixed platform, a centralized heating plate is arranged inside the shielding fixed platform and below the uniform heating plate, and a centralized driving mechanism is arranged inside the shielding fixed platform and below the centralized heating plate, wherein the centralized driving mechanism can drive the centralized heating plate to move below the uniform heating plate; The shielding fixing platform is arranged inside the mounting shell, a grabbing and transferring mechanism is arranged on the top of the mounting shell, a fixing chuck is arranged on the upper surface of the uniform heating plate, the grabbing and transferring mechanism can grab the heating carrier plate and move it, and the semiconductor material to be heated is placed inside the heating carrier plate; The grabbing and transferring mechanism can move the heating carrier plate from the feeding position to the inside of the fixed chuck, and the grabbing and transferring mechanism can also move the heating carrier plate from the inside of the fixed chuck to the discharging position; After the heating carrier plate and the semiconductor material to be heated contained in the heating carrier plate are placed in the fixed chuck, the centralized heating plate can be driven by the centralized driving mechanism to move to the position directly below the heating position of the semiconductor material to be heated contained in the heating carrier plate, the uniform heating plate can heat the entire semiconductor material to be heated, and the centralized heating plate can perform centralized heating on the heating position of the semiconductor material to be heated; An insulation component is arranged inside the heating carrier plate, and the insulation component can move inside the insulation component to just below the heating position as the centralized heating plate moves, and the insulation component can insulate the heating position of the semiconductor material after the heating carrier plate is moved out of the fixed chuck.

2. A dual temperature controlled semiconductor heating plate according to claim 1, characterized in that: The uniform heating plate is provided with a support plate, an electric heating plate and a heat conducting plate from top to bottom, an electric heating wire is provided inside the electric heating plate, and the heat outputted by the electric heating plate to each position on the upper surface of the support plate is uniform; The bottom end of the heat-conducting plate can be attached to the centralized heating plate, and the heat-conducting plate includes a heat-insulating plate, and the heat-insulating plate is provided with a plurality of fixing grooves, and a heat-conducting column is arranged inside each of the fixing grooves; The heat of each of the heat-conducting columns from the centralized heating plate can only be conducted along the heat-conducting columns themselves through the electric heating plate to the supporting plate.

3. A dual temperature controlled semiconductor heating plate according to claim 2, characterized in that: The fixed chuck is arranged on the upper surface of the supporting plate, and the fixed chuck includes a fixed positioning plate and a movable positioning plate. The movable positioning plate can approach and move away from the fixed positioning plate, and the movable area of ​​the movable positioning plate is maintained on the upper surface of the supporting plate.

4. A dual temperature controlled semiconductor heating plate according to claim 1, characterized in that: The centralized driving mechanism comprises a driving guide rail, a driving turntable and a positioning rail, one end of the driving guide rail is fixed to the top of the driving turntable, and a positioning slider is arranged at the bottom of the other end of the driving guide rail, and the positioning slider is embedded in the positioning rail; A servo motor is arranged at the bottom end of the driving turntable, and the servo motor can drive the driving guide rail to rotate under the restriction of the positioning track by driving the driving turntable to rotate; A mounting block is provided inside the driving guide rail, and the mounting block is fixed to the bottom end of the centralized heating plate. The driving guide rail can drive the centralized heating plate to move along the restricted direction of the driving guide rail by driving the mounting block to move.

5. The dual temperature controlled semiconductor heating plate according to claim 1, characterized in that: The centralized heating plate includes a high-heat plate, a heat-insulating pad and a linkage electromagnet, wherein the heat-insulating pad is arranged between the high-heat plate and the linkage electromagnet, and the heat-insulating pad is used to prevent the heat of the high-heat plate from being transferred to the linkage electromagnet; The top end of the high-heating plate can be fitted with the uniform heating plate, and the high-heating plate can provide heat to the uniform heating plate.

6. A dual temperature controlled semiconductor heating plate according to claim 5, characterized in that: The shell of the heating carrier plate is made of heat-conducting material, and a holding groove is provided on the top of the heating carrier plate, and the semiconductor material to be heated can be accommodated in the holding groove; A vacuum cavity is provided inside the heating carrier plate, the heat preservation component is arranged inside the vacuum cavity, and the top and bottom of the heat preservation component are respectively in contact with the top and bottom of the inner wall of the vacuum cavity for heat transfer.

7. A dual temperature controlled semiconductor heating plate according to claim 6, characterized in that: The shell of the thermal insulation component is made of heat-conducting material, a thermal insulation cavity is arranged inside the thermal insulation component, and a thermal insulation liquid is arranged inside the thermal insulation cavity, and the thermal insulation liquid can conduct heat to the outside through the shell of the thermal insulation component; The heat preservation component is made of magnetic material. During the movement of the linkage electromagnet, the linkage electromagnet generates a magnetic field after being energized. Under the action of the magnetic field, the heat preservation component can move on a horizontal plane inside the vacuum chamber as the linkage electromagnet moves.

8. A dual temperature controlled semiconductor heating plate according to claim 7, characterized in that: The grabbing and transferring mechanism comprises a grabbing guide rail, a telescopic grab bar and a pneumatic grabber, wherein the fixed end of the telescopic grab bar is hoisted and arranged at the bottom end of the grabbing guide rail, and the pneumatic grabber is arranged at the movable end of the telescopic grab bar; The grabbing guide rail can drive the telescopic grab rod and the pneumatic gripper to move from the feeding position to the discharging position through the top of the fixed chuck; the telescopic grab rod can be retracted at the feeding position, above the fixed chuck and at the discharging position; the pneumatic gripper can grab and place the heating carrier plate at the feeding position, above the fixed chuck and at the discharging position.

9. A dual temperature controlled semiconductor heating plate according to claim 8, characterized in that: After the semiconductor material placed inside the heating carrier plate is heated, the telescopic gripping rod is first retracted, and the pneumatic gripper grabs the heating carrier plate and moves it vertically upward until the linkage electromagnet is powered off and the heat preservation component is out of the magnetic field influence range of the linkage electromagnet, and then the grabbing guide rail drives the heating carrier plate to move horizontally; After the heating carrier plate is moved out from the interior of the fixed chuck, the heat preservation component can keep the heating position of the semiconductor material warm.

10. A temperature control method, characterized in that: Using a dual temperature controlled semiconductor heating plate as claimed in any one of claims 1 to 9 as a heating source comprises the following steps: First, preheat the uniform heating plate, and drive the centralized heating plate to move to the center position below the uniform heating plate through the centralized driving mechanism; The heating carrier plate is moved from the feeding position to the inside of the fixed chuck by the grabbing and transferring mechanism, and then the centralized heating plate is driven by the centralized driving mechanism to move to the position directly below the heating position of the semiconductor material to be heated, and at the same time, the heat preservation component moves inside the heat preservation component to the position directly below the heating position along with the movement of the centralized heating plate; The uniform heating plate heats the entire semiconductor material to be heated, and the centralized heating plate centrally heats the heating position of the semiconductor material to be heated until the heating position of the semiconductor material is heated to a set temperature; After heating is completed, the grabbing and transferring mechanism moves the heating carrier plate from the inside of the fixed chuck to the discharge position, and the heat preservation component can keep the heating position of the semiconductor material warm after the heating carrier plate is moved out of the inside of the fixed chuck.

Images