Perovskite thin film passivation system and passivation method

Abstract

The present application provides a perovskite film passivation system and a passivation method, which relate to the field of photovoltaic cells. A perovskite film passivation method comprises the following steps: placing a silicon wafer formed with a perovskite film in a carrier; placing the carrier into a first receiving space in a first passivation tank by a manipulator for immersion treatment; taking out the carrier by a manipulator and placing it into a second receiving space in a heat treatment tank for heat treatment, so that a first passivator reacts with the perovskite film to form a first passivation layer on the perovskite film; taking out the carrier from the heat treatment tank by a manipulator and placing it into a third receiving space in a cleaning tank for cleaning treatment; the third receiving space contains a second solution, and the second solution includes a low-polarity solvent; taking out the carrier from the cleaning tank by a manipulator and placing it into a heat treatment tank for drying. The perovskite film passivation method can realize a batch passivation process of perovskite film.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic cells, and in particular to a perovskite film passivation system and a passivation method. Background Art

[0002] In perovskite cells, surface passivation of perovskite films can repair deep defects at the interface and effectively improve the performance of perovskite solar cells.

[0003] In traditional technologies, the passivation solution for perovskite is usually spin-coated, scraped or slit-coated, or the passivation material is evaporated. However, spin-coated, scraped or slit-coated passivation solution is difficult to achieve high cycle time and low-cost mass production in mass production. Summary of the invention

[0004] Based on this, it is necessary to provide a perovskite film passivation system and a passivation method that can passivate perovskite films in batches.

[0005] In a first aspect, the present application provides a perovskite film passivation method, comprising the following steps: configuring a silicon wafer formed with a perovskite film in a carrier; placing the carrier into a first receiving space in a first passivation tank by a robot for immersion treatment; the first receiving space contains a first solution, and the first solution includes a first passivator and a low-polarity solvent; taking the carrier out of the first passivation tank by a robot, and placing it in a second receiving space of a heat treatment tank for heat treatment, so that the first passivator and the perovskite film undergo a passivation reaction to form a first passivation layer on the perovskite film; taking the carrier out of the heat treatment tank by a robot, and placing it in a third receiving space of a cleaning tank for cleaning treatment; the third receiving space contains a second solution, and the second solution includes a low-polarity solvent; taking the carrier out of the cleaning tank by a robot, and placing it in a heat treatment tank for drying.

[0006] In one embodiment, the first passivation tank is equipped with a first vibration mechanism, and during the immersion process, the first solution is driven to vibrate through the first vibration mechanism; and / or, the cleaning tank is equipped with a second vibration mechanism, and during the cleaning process, the second solution is driven to vibrate through the second vibration mechanism.

[0007] In one of the embodiments, before the carrier is placed into the first receiving space of the first passivation tank by a robot for immersion treatment, the method further includes: placing the carrier into a cleaning tank by a robot for surface cleaning treatment; taking the carrier out of the cleaning tank by a robot and placing it into a heat treatment tank for drying treatment; before the carrier is taken out of the heat treatment tank by a robot and placed into the third receiving space of the cleaning tank for cleaning treatment, the method further includes: placing the carrier into a second passivation tank by a robot for immersion treatment; the second passivation tank contains a third solution, and the third solution includes a second passivator and a low-polarity solvent; taking the carrier out of the second passivation tank by a robot and placing it into the second receiving space of the heat treatment tank for heat treatment, so that the second passivator reacts with the perovskite film to form a second passivation layer on the perovskite film.

[0008] In a second aspect, the present application also provides a perovskite film passivation system applied to any one of the perovskite film passivation methods, the perovskite film passivation system comprising: a carrier for carrying a silicon wafer formed with a perovskite film; a first passivation tank, the first passivation tank having a first containing space, the first containing space containing a first solution, the first solution comprising a first passivator and a low-polarity solvent, the first containing space being capable of placing the carrier; a heat treatment tank, the heat treatment tank having a second containing space, the second containing space being capable of placing the carrier, and being capable of heat treating the carrier; a cleaning tank, the cleaning tank having a third containing space, the third containing space containing a second solution, the second solution comprising a low-polarity solvent, the third containing space being capable of placing the carrier; and a manipulator for clamping the carrier so that the carrier can move between the first containing space, the second containing space and the third containing space.

[0009] In one embodiment, the first passivation tank is equipped with a first vibration mechanism, and the first vibration mechanism is used to drive the first solution to vibrate; and / or, the cleaning tank is equipped with a second vibration mechanism, and the second vibration mechanism is used to drive the second solution to vibrate.

[0010] In one embodiment, the first vibration mechanism and the second vibration mechanism are ultrasonic generators or bubblers.

[0011] In one of the embodiments, the heat treatment tank is further configured with a blowing member and a control module, the blowing member is used to blow hot air into the second accommodation space, and the control module is used to control the temperature and air volume of the hot air blown by the blowing member.

[0012] In one embodiment, the perovskite thin film passivation system also includes: a liquid replenishment device, including a first liquid replenishment tank and a second liquid replenishment tank; the first liquid replenishment tank is used to store a first solution, is connected to the first storage space, and is used to transport the first solution to the first storage space; the second liquid replenishment tank is used to store a low-polarity solvent, is connected to the first storage space and the third storage space, and is used to transport a low-polarity solvent to the first storage space and / or the third storage space.

[0013] In one embodiment, the first fluid replenishment tank is equipped with a first flow meter and a first control valve, and the first control valve is used to regularly deliver the first solution to the first storage space; and / or, the second fluid replenishment tank is equipped with a second flow meter and a second control valve, and the second control valve is used to regularly deliver the low-polarity solvent to the first storage space and the third storage space.

[0014] In one of the embodiments, the perovskite film passivation system further includes: a condensation recovery device, which is connected to the heat treatment tank and is used to collect the volatilized low-polarity solvent and collect it after condensation.

[0015] In the above-mentioned perovskite film passivation system and perovskite film passivation method, the silicon wafer formed with the perovskite film is carried by a carrier, and the manipulator can drive the silicon wafer to move after clamping the carrier. When the carrier is placed in the first accommodation space of the passivation tank, the first solution in the first accommodation space can be enriched in the silicon wafer, and then the carrier is taken out by the manipulator and placed in the heat treatment tank for heat treatment, so that the first passivator in the first solution reacts with the perovskite film to form a passivation layer on the perovskite film, and then the manipulator puts the carrier into the cleaning tank for cleaning, and puts it into the heat treatment tank again for drying. In this way, a batch passivation process of perovskite film can be realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 FIG. 4 is a structural block diagram of a perovskite film passivation system in one embodiment.

[0017] Figure 2 FIG. 4 is a flow chart of a method for passivating a perovskite film in one embodiment.

[0018] Figure 3 FIG. 4 is a flow chart of a method for passivating a perovskite film in another embodiment.

[0019] Explanation of the reference numerals: 10, carrier; 20, first passivation tank; 30, heat treatment tank; 40, cleaning tank; 50, robot; 60, liquid replenishing device; 61, first liquid replenishing tank; 62, second liquid replenishing tank; 70, condensation recovery device. DETAILED DESCRIPTION

[0020] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0022] See also Figure 1 , Figure 1 The structural block diagram of a perovskite film passivation system in an embodiment is shown, and the perovskite film passivation system includes a carrier 10, a first passivation tank 20, a heat treatment tank 30, a cleaning tank 40 and a manipulator 50. The carrier 10 is used to carry a silicon wafer formed with a perovskite film. The first passivation tank 20 is used to passivate the perovskite film on the silicon wafer. The heat treatment tank 30 is used to provide a heating environment, which can promote the passivation reaction and provide a drying effect. The cleaning tank 40 is used to clean the silicon wafer. The manipulator 50 is used to clamp the carrier 10 for movement, so that the carrier 10 can move between the first passivation tank 20, the heat treatment tank 30 and the cleaning tank 40.

[0023] Specifically, the first passivation tank 20 has a first accommodation space, such as a box structure with an upper opening. The first accommodation space accommodates a first solution, the first solution includes a first passivating agent and a low-polarity solvent, and the first accommodation space can accommodate the carrier 10. In this way, the robot 50 can clamp the carrier 10, put the carrier 10 into the first accommodation space from the opening above the first passivation tank 20, and immerse it in the first solution, so that the first solution is deposited on the silicon wafer.

[0024] Illustratively, the low polarity solvent may be one or more combinations of n-butanol, toluene, isopropanol, and the like.

[0025] Illustratively, the first passivating agent may be a propylenediamine halogen salt, such as propylenediamine hydroiodide, propylenediamine hydrochloride, propylenediamine bromide and the like.

[0026] The heat treatment tank 30 has a second accommodation space, such as a box structure with an upper opening, and the second accommodation space can hold the carrier 10 for heat treatment of the carrier 10. The manipulator 50 can place the carrier 10 in the second accommodation space and perform heat treatment on the carrier 10 through the heat treatment tank 30. On the one hand, when the first solution is deposited on the silicon wafer, the heat treatment can promote the reaction between the first passivator and the perovskite film to form a two-dimensional passivation layer on the surface of the perovskite film; on the other hand, after the silicon wafer is cleaned, it can be dried by heat treatment to remove the cleaning solution remaining on the surface of the silicon wafer.

[0027] The cleaning tank 40 has a third storage space, such as a box structure with an upper opening. The third storage space contains a second solution, the second solution includes a low-polarity solvent, and the third storage space can hold the carrier 10. In this way, the robot 50 can place the carrier 10 in the third storage space of the cleaning tank 40 and clean it with the cleaning solution. Exemplarily, the second solution can also include a cleaning agent for cleaning the silicon wafer.

[0028] The robot 50 is used to clamp the carrier 10 so that the carrier 10 can move among the first accommodation space, the second accommodation space and the third accommodation space.

[0029] In the above-mentioned perovskite film passivation system, the silicon wafer formed with the perovskite film is carried by the carrier 10, and the manipulator 50 can drive the silicon wafer to move after clamping the carrier 10. When the carrier 10 is placed in the first accommodation space of the passivation tank, the first solution in the first accommodation space can be enriched in the silicon wafer, and then the carrier 10 is taken out by the manipulator 50 and placed in the heat treatment tank 30 for heat treatment, so that the first passivator in the first solution reacts with the perovskite film to form a passivation layer on the perovskite film, and then the manipulator 50 puts the carrier 10 into the cleaning tank 40 for cleaning, and puts it into the heat treatment tank 30 again for drying. In this way, a batch passivation process of perovskite film can be realized.

[0030] In some embodiments, the first passivation tank 20 is provided with a first vibration mechanism, and the first vibration mechanism is used to drive the first solution to vibrate. When the silicon wafer is immersed in the first solution, the first vibration mechanism drives the first solution to vibrate, which can greatly improve the solubility of the first passivator small molecule with low solubility in the low polarity solvent on the one hand, and on the other hand, can improve the contact effect between the silicon wafer and the first passivator. Compared with the traditional solution of reacting on a hot stage after spin coating, vibration during immersion treatment can improve the efficiency of the perovskite film to complete the coordination passivation reaction and improve the passivation quality.

[0031] Exemplarily, the first vibration mechanism may be an ultrasonic generator or a bubbler. The ultrasonic generator can generate high-frequency sound waves, thereby forming tiny bubbles in the first solution, and using the cavitation effect of the bubbles to cause the first solution to vibrate. The bubbler can send air or other gases into the first solution through an air pump to form bubbles, promote contact between the gas and the liquid, increase solubility, and cause the first solution to vibrate.

[0032] In some embodiments, the cleaning tank 40 is equipped with a second vibration mechanism, which is used to drive the second solution to vibrate. The second solution includes a low-polarity solvent, and the second vibration mechanism drives the second solution to vibrate, which can improve the cleaning effect on the silicon wafer.

[0033] Exemplarily, the second vibration mechanism may be an ultrasonic generator or a bubbler.

[0034] Optionally, the heat treatment tank 30 is further equipped with a blowing member and a control module, so that the heat treatment tank 30 performs heat treatment in the form of hot air. The blowing member is used to blow hot air into the second accommodation space to increase the temperature of the silicon wafer, and the control module is used to control the temperature and air volume of the hot air blown by the blowing member.

[0035] Continue to see Figure 1 In some embodiments, the perovskite thin film passivation system further includes a liquid replenishing device 60, including a first liquid replenishing tank 61 and a second liquid replenishing tank 62. The first liquid replenishing tank 61 is used to store the first solution, and the first liquid replenishing tank 61 is connected to the first accommodation space and is used to transport the first solution to the first accommodation space. When the amount of the first solution in the first passivation tank 20 is reduced and does not meet the use demand, the first solution can be replenished into the first passivation tank 20 through the first liquid replenishing tank 61.

[0036] In a feasible implementation, the first liquid replenishing tank 61 is equipped with a first flow meter and a first control valve, and the first control valve is used to regularly deliver the first solution to the first containing space, so as to ensure that the first solution in the first containing cavity can always meet the use requirements.

[0037] The second refilling tank 62 is used to store low-polarity solvents. The second refilling tank 62 is connected to the first accommodation space and the third accommodation space, and is used to deliver low-polarity solvents to the first accommodation space and / or the third accommodation space. When the amount of low-polarity solvent in the first passivation tank 20 decreases, resulting in an excessively high concentration of the first passivating agent, the low-polarity solvent can be delivered to the first accommodation space through the second refilling tank 62 so that the concentration of the first solution meets the requirements. In addition, when the concentration of the low-polarity solvent in the cleaning tank 40 decreases, the second refilling tank 62 can deliver the low-polarity solvent to the third accommodation cavity.

[0038] In a feasible implementation, the second liquid replenishing tank 62 is equipped with a second flow meter and a second control valve, and the second control valve is used to regularly deliver the low-polarity solvent to the first storage space and the third storage space, so that the low-polarity solvent in the third storage chamber can always meet the use demand.

[0039] Continue to see Figure 1 In some embodiments, the perovskite thin film passivation system further includes a condensation recovery device 70, which is connected to the heat treatment tank 30 and is used to collect the volatilized low-polarity solvent and collect it after condensation. When the heat treatment tank 30 heats the crystalline silicon, the low-polarity solvent on the crystalline silicon volatilizes. In order to avoid the waste of the low-polarity solvent, the volatilized low-polarity solvent can be collected by the condensation recovery device 70, and it can be condensed and recovered to avoid waste. On the one hand, it can improve the utilization rate of the solvent; on the other hand, it can avoid environmental pollution.

[0040] See also Figure 2 The present application also provides a perovskite film passivation method, comprising the following steps S202~S210.

[0041] S202 , placing the silicon wafer with the perovskite film formed thereon in the carrier 10 .

[0042] S204, placing the carrier 10 into the first containing space in the first passivation tank 20 for immersion treatment by the robot 50; the first containing space contains a first solution, and the first solution includes a first passivator and a low-polarity solvent.

[0043] Exemplarily, the first solution includes isopropanol and propylene diamine halide, and the temperature of the first solution may be 20° C. to 30° C., specifically, the temperature of the first solution is 25° C. Wherein, the propylene diamine halide may be propylene diamine iodine, and the concentration is 1 mg / ml.

[0044] Exemplarily, the soaking time may be 10s to 30s. Specifically, the soaking time may be 20s.

[0045] S206, taking the carrier 10 out of the first passivation tank 20 by the robot 50, and putting it into the second receiving space of the heat treatment tank 30 for heat treatment, so that the first passivator and the perovskite film undergo a passivation reaction, and a first passivation layer is formed on the perovskite film.

[0046] For example, the temperature of the heat treatment may be 80° C. to 120° C., and the time may be 8 min to 15 min. Specifically, the temperature of the heat treatment may be 100° C., and the time of the heat treatment may be 10 min.

[0047] By heat treating the crystalline silicon in the heat treatment tank 30 , the non-polar solvent on the surface of the crystalline silicon can be dried, and the passivating agent propylene diamine iodide can be caused to react with the perovskite film to form a two-dimensional passivation layer on the surface of the perovskite film.

[0048] S208, taking the carrier 10 out of the heat treatment tank 30 by the robot 50, and putting it into the third containing space of the cleaning tank 40 for cleaning treatment; the third containing space contains a second solution, and the second solution includes a low-polarity solvent.

[0049] Exemplarily, the temperature of the second solution may be 20° C. to 30° C., specifically, the temperature of the second solution is 25° C., and n-butanol is used as the solvent. The propylenediamine halide molecules that have not formed a two-dimensional passivation layer on the surface of the perovskite film are washed away by the cleaning process.

[0050] S210, taking the carrier 10 out of the cleaning tank 40 by the robot 50, and putting it into the heat treatment tank 30 for drying.

[0051] Exemplarily, the drying temperature may be 80° C. to 120° C., and the drying time may be 1 min to 5 min. Specifically, the drying temperature may be 100° C., and the drying time may be 2 min.

[0052] In the above-mentioned perovskite film passivation method, the silicon wafer formed with the perovskite film is carried by the carrier 10, and the manipulator 50 can drive the silicon wafer to move after clamping the carrier 10. When the carrier 10 is placed in the first accommodation space of the passivation tank, the first solution in the first accommodation space can be enriched in the silicon wafer, and then the carrier 10 is taken out by the manipulator 50 and placed in the heat treatment tank 30 for heat treatment, so that the first passivator in the first solution reacts with the perovskite film to form a passivation layer on the perovskite film, and then the manipulator 50 puts the carrier 10 into the cleaning tank 40 for cleaning, and puts it into the heat treatment tank 30 again for drying. In this way, a batch passivation process of perovskite film can be realized.

[0053] Optionally, the first passivation tank 20 is provided with a first vibration mechanism. During the immersion treatment, the first solution is driven to vibrate by the first vibration mechanism to improve the contact effect between the first solution and the crystalline silicon.

[0054] Optionally, the cleaning tank 40 is provided with a second vibration mechanism. During the cleaning process, the second vibration mechanism drives the second solution to vibrate, so as to improve the contact effect between the second solution and the crystalline silicon.

[0055] In some embodiments, see Figure 3 Before step S204, before the robot 50 places the carrier 10 into the first accommodation space in the first passivation tank 20 for immersion treatment, the method further includes S203a and S203b.

[0056] S203a, placing the carrier 10 into the cleaning tank 40 by the robot 50 for surface cleaning.

[0057] S203b, taking the carrier 10 out of the cleaning tank 40 by the robot 50, and putting it into the heat treatment tank 30 for drying.

[0058] Before the step S208 in which the robot 50 takes the carrier 10 out of the heat treatment tank 30 and puts it into the third receiving space of the cleaning tank 40 for cleaning, the method further includes steps S207a and S207b.

[0059] S207a, placing the carrier 10 into a second passivation tank for immersion treatment by means of the robot 50; the second passivation tank contains a third solution, and the third solution includes a second passivating agent and a low-polarity solvent.

[0060] Exemplarily, the temperature of the third solution may be 20°C to 30°C, and specifically, the temperature of the third solution is 25°C.

[0061] Illustratively, the second passivating agent may be iodinated piperazine at a concentration of 0.5 mg / mL.

[0062] Exemplarily, the soaking time may be 10s to 30s. Specifically, the soaking time may be 20s.

[0063] S207b, taking the carrier 10 out of the second passivation tank by the robot 50, and putting it into the second receiving space of the heat treatment tank 30 for heat treatment, so that the second passivator and the perovskite film undergo a passivation reaction to form a second passivation layer on the perovskite film.

[0064] In this embodiment, a double passivation process is used, and the second passivator in the second passivation tank reacts with the perovskite to further passivate the surface defects of the perovskite film, thereby completing the passivation process.

[0065] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0066] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A perovskite film passivation method, characterized in that: The following steps are involved: Disposing a silicon wafer having a perovskite film formed thereon in a carrier; The carrier is placed into a first receiving space in a first passivation tank by a robot for immersion treatment; the first receiving space contains a first solution, and the first solution includes a first passivator and a low-polarity solvent; The carrier is taken out from the first passivation tank by a robot, and is placed in a second accommodation space of a heat treatment tank for heat treatment, so that the first passivating agent and the perovskite film undergo a passivation reaction to form a first passivation layer on the perovskite film; The carrier is taken out from the heat treatment tank by a robot and placed in a third containing space of a cleaning tank for cleaning; the third containing space contains a second solution, and the second solution includes a low-polarity solvent; The carrier is taken out from the cleaning tank by a robot and placed in a heat treatment tank for drying.

2. The perovskite film passivation method according to claim 1, characterized in that: The first passivation tank is provided with a first vibration mechanism, and during the immersion process, the first solution is driven to vibrate by the first vibration mechanism; and / or, The cleaning tank is provided with a second vibration mechanism, and during the cleaning process, the second solution is driven to vibrate by the second vibration mechanism.

3. The perovskite film passivation method according to claim 1, characterized in that: Before placing the carrier into the first accommodation space of the first passivation tank by the robot for immersion treatment, the method further includes: The carrier is placed in a cleaning tank by a robot arm for surface cleaning; The carrier is taken out from the cleaning tank by a robot and placed in a heat treatment tank for drying; Before the carrier is taken out from the heat treatment tank by the robot and placed in the third receiving space of the cleaning tank for cleaning, the method further includes: The carrier is placed into a second passivation tank for immersion treatment by a robot; the second passivation tank contains a third solution, and the third solution includes a second passivating agent and a low-polarity solvent; The carrier is taken out from the second passivation tank by a robot and placed in the second accommodation space of a heat treatment tank for heat treatment, so that the second passivator reacts with the perovskite film to form a second passivation layer on the perovskite film.

4. A perovskite film passivation system applied to the perovskite film passivation method according to any one of claims 1 to 3, characterized in that: The perovskite film passivation system comprises: A carrier, used for carrying a silicon wafer formed with a perovskite film; a first passivation tank, wherein the first passivation tank has a first accommodation space, the first accommodation space accommodates a first solution, the first solution includes a first passivating agent and a low-polarity solvent, and the first accommodation space can accommodate the carrier; A heat treatment tank, wherein the heat treatment tank has a second accommodating space, wherein the second accommodating space can hold the carrier and is used to perform heat treatment on the carrier; A cleaning tank, the cleaning tank having a third containing space, the third containing space containing a second solution, the second solution comprising a low-polarity solvent, the third containing space being capable of placing the carrier; The robot is used to clamp the carrier so that the carrier can move among the first accommodating space, the second accommodating space and the third accommodating space.

5. The perovskite thin film passivation system according to claim 4, characterized in that: The first passivation tank is provided with a first vibration mechanism, and the first vibration mechanism is used to drive the first solution to vibrate; and / or, The cleaning tank is provided with a second vibration mechanism, and the second vibration mechanism is used to drive the second solution to vibrate.

6. The perovskite thin film passivation system according to claim 5, characterized in that: The first vibration mechanism and the second vibration mechanism are ultrasonic generators or bubblers.

7. The perovskite thin film passivation system according to claim 4, characterized in that: The heat treatment tank is further configured with a blowing member and a control module. The blowing member is used to blow hot air into the second accommodating space, and the control module is used to control the temperature and air volume of the hot air blown by the blowing member.

8. The perovskite thin film passivation system according to claim 4, characterized in that: The perovskite film passivation system also includes: The fluid replenishment device includes a first fluid replenishment tank and a second fluid replenishment tank; the first fluid replenishment tank is used to store a first solution, is connected to the first storage space, and is used to transport the first solution to the first storage space; the second fluid replenishment tank is used to store a low-polarity solvent, is connected to the first storage space and the third storage space, and is used to transport the low-polarity solvent to the first storage space and / or the third storage space.

9. The perovskite thin film passivation system according to claim 8, characterized in that: The first liquid replenishing tank is equipped with a first flow meter and a first control valve, and the first control valve is used to regularly deliver the first solution to the first containing space; and / or, The second liquid replenishing tank is equipped with a second flow meter and a second control valve, and the second control valve is used to regularly deliver the low-polarity solvent to the first containing space and the third containing space.

10. The perovskite thin film passivation system according to claim 4, characterized in that: The perovskite film passivation system also includes: A condensation recovery device is connected to the heat treatment tank and is used to collect the volatilized low-polarity solvent and collect it after condensation.

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