Substrate mounting table and substrate processing apparatus

Abstract

A substrate mounting table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a laminated portion, an intermediate layer, and a cladding layer. The lamination part is arranged on the base. The intermediate layer is provided on the laminated portion. The coating layer is arranged on the middle layer. The laminated portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. And the middle layer is arranged between the second layer and the coating layer and is tightly attached to the second layer and the coating layer. The second layer is a resin layer. And the coating layer is made of ceramic.

Description

[0001] This application is a divisional application of an application with an application date of December 19, 2019, application number 201911314810.3, and invention name “Substrate mounting table and substrate processing device”. Technical Field

[0002] Exemplary embodiments of the present disclosure relate to a substrate mounting table and a substrate processing apparatus. Background Art

[0003] The substrate (wafer) placed on the mounting table can be held by an electrostatic chuck. The electrostatic chuck electrostatically adsorbs the wafer to the mounting table by electrostatic force. The mounting device disclosed in Patent Document 1 (Japanese Patent Publication No. 2008-117982) includes a carrier and an electrostatic chuck. The carrier carries the object to be processed. The electrostatic chuck includes an insulating layer and an electrode layer buried in the insulating layer. A voltage is applied to the electrode layer by the electrostatic chuck, thereby generating an electrostatic force between the electrode layer and the object to be processed and electrostatically adsorbing the object to be processed on the surface of the insulating layer. The electrostatic chuck layer, which is an insulating layer on the surface side of the electrode layer, is an yttrium oxide sprayed layer with a thickness of 200 to 280 μm formed by plasma spraying. The surface of the electrostatic chuck layer is formed to have a surface roughness that depends on the particle size of the sprayed yttrium oxide. Summary of the invention

[0004] In an exemplary embodiment, a substrate carrier is provided. The substrate carrier comprises a base and an electrostatic chuck disposed on the base. The electrostatic chuck comprises a stacking portion, an intermediate layer and a coating layer. The stacking portion is disposed on the base. The intermediate layer is disposed on the stacking portion. The coating layer is disposed on the intermediate layer. The stacking portion comprises a first layer, an electrode layer and a second layer. The first layer is disposed on the base. The electrode layer is disposed on the first layer. The second layer is disposed on the electrode layer. The intermediate layer is disposed between the second layer and the coating layer and is in close contact with the second layer and the coating layer. The second layer is a resin layer. The coating layer is ceramic. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 It is a diagram showing an example of the structure of a substrate mounting table according to the exemplary embodiment.

[0006] Figure 2 To express Figure 1 A diagram showing an example of the structure of an end portion of a substrate mounting table shown.

[0007] Figure 3 To express Figure 1 A diagram showing an example of a structure of a portion of a substrate mounting table shown.

[0008] Figure 4 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0009] Figure 5 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0010] Figure 6 For illustration Figures 2 to 5 Each of the diagrams shows a method for forming a coating layer.

[0011] Figure 7 To indicate that there is Figure 1 A diagram showing an example of a structure of a substrate processing apparatus including a substrate mounting table.

[0012] Figure 8 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0013] Fig. 9 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0014] Fig.10 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0015] Fig.11 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0016] Fig.12 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0017] Fig.13 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0018] Fig.14 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0019] Fig.15 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0020] Fig.16 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0021] Fig.17 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0022] Fig.18 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0023] Fig.19 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0024] Fig. 20 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0025] Fig.21 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0026] Fig. 22 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0027] Fig.23 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table.

[0028] Fig.24 To express Figure 1 FIG. 2 is a diagram showing another example of the structure of the end portion of the substrate mounting table. DETAILED DESCRIPTION

[0029] The present disclosure provides a technology for suppressing discharge between a substrate mounting table and a substrate.

[0030] Various exemplary embodiments are described below. In an exemplary embodiment, a substrate carrier is provided. The substrate carrier comprises a base and an electrostatic chuck disposed on the base. The electrostatic chuck comprises a stacking portion, an intermediate layer and a coating layer. The stacking portion is disposed on the base. The intermediate layer is disposed on the stacking portion. The coating layer is disposed on the intermediate layer. The stacking portion comprises a first layer, an electrode layer and a second layer. The first layer is disposed on the base. The electrode layer is disposed on the first layer. The second layer is disposed on the electrode layer. The intermediate layer is disposed between the second layer and the coating layer and is in close contact with the second layer and the coating layer. The second layer is a resin layer. The coating layer is ceramic. Thus, it is known that the second layer disposed on the electrode layer of the electrostatic chuck has a relatively high dielectric strength as a resin, so that the prescribed dielectric strength can be maintained and the thickness of the second layer can be sufficiently reduced. Therefore, the synthetic electrostatic capacitance of the electrostatic chuck increases, and the potential between the substrate mounted on the substrate carrier and the base can be reduced. Therefore, when a voltage is applied to the substrate mounting table at a relatively low frequency, the voltage phase difference is reduced, thereby being able to suppress the occurrence of discharge between the substrate mounting table and the substrate.

[0031] In an exemplary embodiment, the first layer is a resin layer.

[0032] In an exemplary embodiment, the base includes a main body and a side wall provided on a side of the base. The electrostatic chuck is disposed on the main body and the side wall. The diameter of each of the first layer and the second layer is smaller than the diameter of the main body. The first layer and the second layer extend on the base in a manner overlapping with the side wall.

[0033] In an exemplary embodiment, the intermediate layer includes an end region covering the side surface of the laminated portion. The end region is in contact with the base and has a tapered shape with a front end tapered toward a direction away from the laminated portion.

[0034] In an exemplary embodiment, the taper angle of the end region is 45° or less.

[0035] In an exemplary embodiment, the material of the first layer and the material of the second layer are any one of polyimide resin, silicone resin, epoxy resin, or acrylic resin.

[0036] In an exemplary embodiment, the substrate mounting table further includes an end region. The end region covers the side surface of the laminated portion. The material of the end region is a resin or an insulator. The first layer is an insulating layer or a resin layer.

[0037] In an exemplary embodiment, when the first layer is an insulating layer, the material of the first layer is ceramic. When the first layer is a resin layer, the material of the first layer is any one of polyimide resin, silicone resin, epoxy resin or acrylic resin. The material of the second layer is any one of polyimide resin, silicone resin, epoxy resin or acrylic resin.

[0038] In the exemplary embodiment, the end region of the resin has a tapered shape in which the front end becomes thinner in a direction away from the laminated portion.

[0039] In an exemplary embodiment, the base has an insulating region on a surface of the base. The insulating region has a portion extending along a side surface of the laminate. The end region of the resin is provided between the side surface of the laminate and the portion of the insulating region.

[0040] In an exemplary embodiment, the base includes a main body and a side wall portion provided on a side of the base. The electrostatic chuck is disposed on the main body and the side wall portion. The inner diameter of each of the first layer and the second layer is smaller than the inner diameter of the main body. The first layer and the second layer extend on the base in a manner overlapping with the side wall portion. The surface of the side wall portion has a portion extending along the side of the laminate portion. The end region of the resin is provided between the side of the laminate portion and the portion of the surface of the side wall portion.

[0041] In an exemplary embodiment, the diameter of the electrode layer is smaller than the diameters of the first layer and the second layer.

[0042] In an exemplary embodiment, the intermediate layer covers the entire surface of the laminated portion disposed on the base.

[0043] In an exemplary embodiment, the intermediate layer covers a portion of the side wall portion.

[0044] In an exemplary embodiment, the covering layer includes a base layer and a plurality of protrusions. The base layer is in close contact with the intermediate layer. The plurality of protrusions are provided on the upper surface of the base layer.

[0045] In an exemplary embodiment, the surface roughness of the upper surface of the base layer is 0.05 to 0.5 μm.

[0046] In an exemplary embodiment, the intermediate layer includes a matrix and a plurality of granular bodies dispersed in the matrix. The plurality of granular bodies include exposed portions exposed from the matrix, and the exposed portions are in contact with the second layer and the cladding layer.

[0047] In an exemplary embodiment, the material of the matrix includes a resin or a silane-based agent, and the material of the granular body is ceramic. The silane-based agent is, for example, an inorganic material containing silicon atoms and oxygen atoms.

[0048] In an exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes any one of the above-mentioned substrate mounting tables.

[0049] The substrate processing apparatus according to the exemplary embodiment includes a high-frequency power supply connected to a substrate mounting table and supplying high-frequency power of 3 MHz or less to the substrate mounting table.

[0050] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, the same or corresponding parts in each of the drawings are marked with the same symbols. Figure 1 An embodiment of the structure of the substrate mounting table 2 will be described.

[0051] The substrate stage 2 is provided in the substrate processing apparatus 1. The substrate processing apparatus 1 may be, for example, a parallel plate type plasma processing apparatus, but is not limited thereto. The substrate processing apparatus 1 is fully equipped with equipment required for performing plasma processing on a substrate (hereinafter, sometimes referred to as a wafer) mounted on the substrate stage 2, but Figure 1 The detailed structure of the substrate processing device 1 is not shown in FIG. Figure 7 This will be described later.

[0052] The substrate mounting table 2 has a substantially circular plate shape extending in a manner intersecting the central axis AX. The substrate mounting table 2 includes an electrostatic chuck 3 and a susceptor 4. The electrostatic chuck 3 is provided on the susceptor 4. The electrostatic chuck 3 includes a stacking portion 3a, an intermediate layer 3b, and a coating layer 3c. The stacking portion 3a is provided on the susceptor 4. The intermediate layer 3b is provided on the stacking portion 3a. The coating layer 3c is provided on the intermediate layer 3b.

[0053] The laminated portion 3a includes a layer 3a1 (first layer), an electrode layer 3a2, and a layer 3a3 (second layer). The layer 3a1 is provided on the base 4. The electrode layer 3a2 is provided on the layer 3a1. The layer 3a3 is provided on the electrode layer 3a2. The layer 3a3 is a resin layer.

[0054] Here, if Figure 2 As shown, the intermediate layer 3b includes a base 3b1 and a plurality of granular bodies 3b2, and the plurality of granular bodies 3b2 are dispersed in the base 3b1. A portion of the plurality of granular bodies 3b2 is exposed from the base 3b1 to one side of the layer 3a3 and the coating layer 3c (more specifically, the base layer 3c1) in contact with the base 3b1. The plurality of granular bodies 3b2 include an exposed portion thus exposed from the base 3b1. The exposed portion is in contact with the layer 3a3 and the coating layer 3c. Therefore, the intermediate layer 3b and the layer 3a3 and the intermediate layer 3b and the coating layer 3c (more specifically, the base layer 3c1) are respectively in close contact through a strong coupling force, so that the adhesion is improved. The coating layer 3c has a base layer 3c1 and a plurality of protrusions 3c2. The plurality of protrusions 3c2 are arranged on the upper surface 31 of the base layer 3c1. When the substrate is placed on the substrate mounting table 2, the substrate is in contact with the plurality of protrusions 3c2.

[0055] Back to Figure 1 The intermediate layer 3 b covers the entire surface of the laminated portion 3 a provided on the base 4 (including the side surface SF2 of the laminated portion 3 a and the upper surface SF3 of the laminated portion 3 a ). The covering layer 3 c covers the entire surface of the intermediate layer 3 b provided on the base 4 .

[0056] The intermediate layer 3b is provided between the layer 3a3 and the coating layer 3c (particularly the base layer 3c1). The intermediate layer 3b is in close contact with the layer 3a3 and the base layer 3c1. The base body 3b1 and the granular body 3b2 are in contact with the base layer 3c1 and the layer 3a3.

[0057] The thickness TH1 corresponds to the sum of the thickness of the laminated portion 3a and the thickness of the intermediate layer 3b. The thickness TH2 corresponds to the thickness of the laminated portion 3a. The thickness TH3 corresponds to the thickness of the cladding layer 3c.

[0058] The susceptor 4 includes a main body 4a and side walls 4b1 and 4b2. The side walls 4b1 and 4b2 are provided on the side surface SF1 of the main body 4a. The electrostatic chuck 3 is disposed on the main body 4a and the side walls 4b1 and 4b2.

[0059] The side wall portion 4b1 corresponds to the outer wall of the susceptor 4. The side wall portion 4b2 corresponds to a bushing defining a hole GT penetrating the electrostatic chuck 3 and the susceptor 4 in the susceptor 4. The hole GT may be a hole for gas flow or a hole provided for moving a pin up and down when the wafer W is placed on the substrate mounting table 2.

[0060] And, as Figure 3As shown, a contact pin 4d is provided on the base 4. The contact pin 4d is electrically connected to the electrode layer 3a2. In the base 4, the contact pin 4d is covered by a bushing 4c. Figure 3 The structure shown is Figure 1 The structure included in the region ER2 is shown.

[0061] refer to Figure 2 , the structure of the end portion of the substrate mounting table 2 will be described. Figure 2 The end of the substrate mounting table 2 shown is Figure 1 The end of the substrate mounting table 2 is a portion including a side wall portion 4b1 corresponding to the outer wall portion of the base 4 and a portion including a side wall portion 4b2 corresponding to a bushing defining the hole GT.

[0062] The intermediate layer 3b has an end region 3bb at the end of the substrate mounting table 2. The end region 3bb covers the side surface SF2 of the laminated portion 3a. The end region 3bb is in contact with the susceptor 4, more specifically, with the side wall portion 4b1 and the side wall portion 4b2.

[0063] The end region 3bb has a tapered shape with the front end tapering away from the laminated portion 3a. In other words, the end region 3bb has a thickness that decreases away from the laminated portion 3a. The thickness of the end region 3bb decreases in a substantially linear manner away from the laminated portion 3a and is reduced to a thickness TH4.

[0064] More specifically, the thickness of the end region 3bb is reduced to a thickness TH4 at a location approximately away from the laminated portion 3a by a length LT3. The length LT3 corresponds to the width of the junction between the end region 3bb and the side wall portions 4b1 and 4b2.

[0065] In addition, the tapered shape of the end region 3bb is not as Figure 2 The tapered shape of the end region 3bb may be as shown. Figure 4 The end region 3bb shown in FIG. 1 is concave (negatively curvatured) tapered at the front end, or Figure 5 Any of the shapes in which the front end tapers in a convex shape (with a positive curvature) as in the end region 3bb shown.

[0066] The diameter of the electrode layer 3a2 is smaller than the diameters of the layers 3a1 and 3a3. The length LT1 corresponds to 1 / 2 of the difference between the diameters of the layers 3a1 and 3a3 and the diameter of the electrode layer 3a2.

[0067] The diameter of each layer 3a1 and layer 3a3 is larger than the diameter of the main body 4a. The length LT2 is equivalent to 1 / 2 of the difference between the diameter of each layer 3a1 and layer 3a3 and the diameter of the main body 4a. In this way, the layers 3a1 and 3a3 extend on the base 4 in a manner overlapping with the side wall 4b1 and the side wall 4b2. The intermediate layer 3b covers a part of the side wall 4b1 and a part of the side wall 4b2.

[0068] According to the substrate stage 2 having the above structure, the layers 3a1 and 3a3 of the electrode layer 3a2 sandwiching the electrostatic chuck 3 have high dielectric strength, so that the thickness of the layers 3a1 and 3a3 can be sufficiently reduced while maintaining the prescribed dielectric strength. Therefore, the synthetic electrostatic capacitance of the electrostatic chuck 3 increases, and the potential between the substrate mounted on the substrate stage 2 and the susceptor 4 can be reduced. Therefore, when a voltage is applied to the substrate stage 2 at a relatively low frequency, for example, a frequency of 3 MHz or less, the voltage phase difference decreases, thereby suppressing the generation of discharge between the substrate stage and the substrate.

[0069] The electrostatic capacitance (composite electrostatic capacitance) of the electrostatic chuck 3 is 10 to 21 pF / cm 2 About. Electrostatic capacitance is less than 10pF / cm 2 When a high frequency power of 3 MHz or less is applied to the substrate stage, discharge is likely to occur between the substrate stage and the substrate. In addition, the upper limit of the currently available electrostatic capacitance is 21 pF / cm 2 .

[0070] The thickness of the electrode layer 3a2 is about 5 μm. The thickness of the layer 3a1 is about 25 to 50 μm. The dielectric constant of the layer 3a1 is about 3.2. The thickness of the layer 3a3 is about 25 to 50 μm. The dielectric constant of the layer 3a3 is about 3.2.

[0071] The thickness of the adhesive layer 3a4 is about 10 to 20 μm. The dielectric constant of the adhesive layer 3a4 is about 3.0. The thickness of the adhesive layer 3a5 is about 10 to 20 μm. The dielectric constant of the adhesive layer 3a5 is about 3.0.

[0072] The thickness of the intermediate layer 3b is about 20 to 100 μm. The dielectric constant of the intermediate layer 3b is about 2.7. The thickness of the cladding layer 3c is ( Figures 1 to 5 The thickness TH3) shown is approximately 65 μm.

[0073] The thickness of the base layer 3c1 is about 50 μm. The dielectric constant of the base layer 3c1 is about 7.1. The thickness of the convex portion 3c2 is about 15 μm. The dielectric constant of the convex portion 3c2 is about 7.1.

[0074] The surface roughness (arithmetic mean roughness: Ra) of the upper surface 31 of the base layer 3c1 is 0.05 to 0.5 μm. The surface roughness (arithmetic mean roughness: Ra) of the end surface 32 of the convex portion 3c2 is 0.05 to 0.5 μm.

[0075] The plurality of protrusions 3c2 are provided, for example, so as to contact approximately 20% of the substrate.

[0076] Figure 2 , 4 The length LT1 shown in 5 is about 1.2 to 2.2 mm. Figure 2 , 4 , 5 is about 0.7 to 1 mm. When the length LT2 is shorter than 0.7 mm, the leakage current increases at the interface between the ceramic and the layer 3a1, and it is easy to cause discharge between the substrate mounting table 2 and the substrate. On the other hand, the area of ​​the laminated portion 3a in contact with the base 4 becomes the largest in order to obtain the adsorption force. Therefore, when the length LT2 is longer than 1 mm, the diameter of the main body 4a becomes smaller and the diameter of the ceramic becomes larger, so that the heat dissipation area of ​​the base 4 is reduced and the temperature of the substrate locally rises, which reduces the temperature uniformity of the substrate in the plane.

[0077] Figure 2 The taper angle θ of the end region 3bb shown is, for example, 45° or less.

[0078] Figure 2 to Figure 6 The layer 3a1 shown is, for example, a resin layer. In this case, the material of the layer 3a1 and the material of the layer 3a3 may be, for example, polyimide resin, silicone resin, epoxy resin or acrylic resin. The materials of the layer 3a1 and the layer 3a3 may be different from each other. The coating layer 3c is ceramic. The material of the side wall portion 4b1 and the material of the side wall portion 4b2 are ceramic.

[0079] The material of the base 3b1 of the intermediate layer 3b includes resin or silane-based agent, and the material of the granular body 3b2 is ceramic.

[0080] refer to Figure 6 An example of a method for forming the coating layer 3c is described below. The method for forming the coating layer 3c is not limited to any method as long as the convex portion 3c2 of the coating layer 3c can be appropriately formed. Figure 6 The method shown.

[0081] implement Figure 6 In the method shown, a plasma spraying device is used to form a ceramic coating layer 3c by spraying. First, the product PD1 is set in the plasma spraying device. The product PD1 includes a base 4, a stacked portion 3a and an intermediate layer 3b. The stacked portion 3a is set on the base 4, and the intermediate layer 3b is set on the stacked portion 3a. The stacked portion 3a includes a layer 3a1, an electrode layer 3a2 and a layer 3a3.

[0082] Next, ceramic spraying is performed on the intermediate layer 3b of the product PD1 to form the product PD2. In ceramic spraying, for example, a powder of a spraying material having a particle size of less than 15 μm is sprayed from the front end of the nozzle together with a plasma generating gas to a plasma generating portion common to the axis and the nozzle. Next, a plasma is generated from the plasma generating gas at a power of less than 50 kW in the plasma generating portion, and the sprayed powder of the spraying material is converted into liquid by the plasma, and spraying is performed in a manner that covers the surface of the intermediate layer 3b. The particle size of the powder of the spraying material is small, and the amount of electricity used to melt the powder of the spraying material can be reduced, so that the intermediate layer 3b will not be burned during spraying, and the coating layer 3d can be formed. In the product PD2, the coating layer 3d is formed on the intermediate layer 3b by ceramic spraying. Figures 1 to 5 The cladding layer 3c shown is formed by processing the cladding layer 3d.

[0083] In the product PD2, the surface of the coating layer 3d is further polished. By this polishing, the surface roughness of the surface of the coating layer 3d becomes similar to Figures 1 to 5 The upper surface 31 of the illustrated base layer 3c1 has the same surface roughness.

[0084] Next, a mask MK1 made of, for example, resin having a plurality of openings is disposed on the cover layer 3d of the product PD2 to form the product PD3. The openings of the mask MK1 correspond to Figures 1 to 5 The illustrated coating layer 3c is provided with a protrusion 3c2.

[0085] Next, ceramic spraying is further performed on the mask MK1 and the coating layer 3d to form the product PD4. The ceramic material used in forming the product PD4 is the same as the ceramic material used in forming the coating layer 3d. In the product PD4, ceramic is filled in the multiple openings of the mask MK1, and a ceramic mask MK2 is also formed on the mask MK1. The portions where ceramic is filled in the multiple openings of the mask MK1 in the product PD4 are the same as those in the product PD4. Figures 1 to 5 The convex portion 3c2 shown corresponds.

[0086] Next, the mask MK1 and the mask MK2 are removed from the product PD4 to form a product PD5. In the product PD5, the surface of the coating layer 3d is provided with unevenness (convex portions and concave portions) formed by removing the mask MK1 and the mask MK2. Figures 1 to 5 The convex portion 3c2 shown corresponds to this).

[0087] Next, the end surface of the convex portion of the coating layer 3d of the product PD5 is polished to form the coating layer 3c from the coating layer 3d, thereby forming the substrate mounting table 2. By this polishing, the surface roughness of the end surface of the convex portion of the coating layer 3d of the product PD5 becomes the same as Figures 1 to 5The surface roughness of the end faces 32 of the shown protrusions 3c2 is the same.

[0088] By forming the base layer 3c1 and the convex portion 3c2 as described above, the surface roughness of not only the end surface 32 of the convex portion 3c2 but also the upper surface 31 of the base layer 3c1 is reduced. Therefore, for example, when plasma cleaning is performed without placing a substrate, the surface is not easily damaged by plasma, so the particles generated from the base layer are reduced. In addition, the convex portion 3c2 is not limited to the formation method using a mask. For example, the convex portion 3c2 can be formed without using a mask after grinding the surface of the coating layer 3d of the product PD2.

[0089] refer to Figure 7 An example of a substrate processing apparatus according to an exemplary embodiment is described. The substrate processing apparatus 1 is a parallel plate type capacitively coupled plasma processing apparatus having a substantially cylindrical processing container PC (chamber). The inner surface of the processing container PC is sprayed with an yttrium oxide film or subjected to an aluminum oxide film treatment (anodization treatment). The interior of the processing container PC becomes a processing chamber for plasma processing such as etching processing or film forming processing by plasma. The substrate processing apparatus 1 is provided with Figures 1 to 5 The substrate mounting table 2 is shown.

[0090] The substrate mounting table 2 mounts a semiconductor wafer (hereinafter referred to as a “wafer W”) as an example of a substrate. The substrate mounting table 2 also functions as a lower electrode.

[0091] The DC power supply 30 is connected via the contact pin 4d (reference Figure 1 and Figure 3 ) is electrically connected to the electrode layer 3a2. When a DC voltage is applied to the electrode layer 3a2 from the DC power supply 30 by opening and closing the switch 30a, the wafer W is attracted to the electrostatic chuck 3 by electrostatic force.

[0092] An annular focus ring 11 is placed on the outer peripheral side of the electrostatic chuck 3 so as to surround the outer edge of the wafer W. The material of the focus ring 11 may be silicon, for example. The focus ring 11 functions to focus plasma toward the surface of the wafer W in the processing chamber PC to improve the efficiency of plasma processing.

[0093] A refrigerant flow path 12a is formed inside the base 4. A cooling medium (hereinafter also referred to as "refrigerant") such as cooling water or salt water output from the condenser 36 flows through the refrigerant inlet pipe 12b, the refrigerant flow path 12a, and the refrigerant outlet pipe 12c and circulates. The substrate mounting table 2 made of metal is cooled by dissipating heat through the circulating refrigerant.

[0094] The heat transfer gas supply source 37 supplies a heat transfer gas such as He gas between the surface of the electrostatic chuck 3 and the back surface of the wafer W via the heat transfer gas supply line 16. With this structure, the temperature of the electrostatic chuck 3 is controlled by the refrigerant circulating in the refrigerant flow path 12a and the heat transfer gas supplied to the back surface of the wafer W. As a result, the wafer W is controlled to a predetermined temperature.

[0095] The first high frequency power supply 33 that supplies high frequency power HF for plasma generation of the first frequency is connected to the substrate mounting table 2 via the first integrator 33a. Furthermore, the second high frequency power supply 34 that supplies high frequency power LF for bias voltage generation of the second frequency is connected to the substrate mounting table 2 via the second integrator 34a. The first frequency is, for example, a high frequency of 40 MHz, and the first high frequency power supply 33 can supply the high frequency power HF of the first frequency to the substrate mounting table 2. The second frequency is a high frequency of 3 MHz or less. In the present embodiment, the high frequency power HF is applied to the substrate mounting table 2, but it may also be applied to the gas nozzle 20.

[0096] The first matcher 33a functions so that the internal impedance of the first high-frequency power source 33 and the load impedance coincide with each other when plasma is generated in the processing container PC. The second matcher 34a functions so that the internal impedance of the second high-frequency power source 34 and the load impedance coincide with each other when plasma is generated in the processing container PC.

[0097] The gas shower head 20 is installed in a manner that closes the opening of the ceiling of the processing container PC via a shield ring 21 covering the outer edge thereof. A variable DC power supply 26 is connected to the gas shower head 20, and a negative DC voltage (DC) is output from the variable DC power supply 26. The gas shower head 20 can be formed of silicon. The gas shower head 20 also functions as a counter electrode (upper electrode) that is opposite to the substrate mounting table 2 (lower electrode).

[0098] A gas inlet 22 for introducing gas is formed in the gas shower head 20. A gas diffusion chamber 24a on the center side and a gas diffusion chamber 24b on the edge side are provided inside the gas shower head 20, which are branched from the gas inlet 22. The gas output from the gas supply source 23 is supplied to the gas diffusion chamber 24a and the gas diffusion chamber 24b through the gas inlet 22, diffused in the gas diffusion chamber 24a and the gas diffusion chamber 24b, and introduced into the substrate mounting table 2 from a plurality of gas supply holes 25.

[0099] An exhaust port 18 is formed on the bottom surface of the processing container PC, and the processing container PC is exhausted by an exhaust device 38 connected to the exhaust port 18. As a result, a predetermined vacuum degree is maintained in the processing container PC. A gate valve 17 is provided on the side wall of the processing container PC. The gate valve 17 is opened and closed when the wafer W is moved into or out of the processing container PC.

[0100] The substrate processing device 1 is provided with a control device 100 for controlling the operation of the entire device. The control device 100 has a CPU 105 (Central Processing Unit), a ROM 110 (Read Only Memory), and a RAM 115 (Random Access Memory). The CPU 105 performs the desired plasma processing such as etching according to the scheme stored in the storage area such as the RAM 115. The scheme sets the processing time, pressure (gas exhaust), high-frequency power and voltage, various gas flow rates, the temperature in the processing container PC (the temperature of the upper electrode, the side wall temperature of the processing container PC, the temperature of the wafer W, the temperature of the electrostatic chuck 3, etc.), the temperature of the refrigerant from the condenser 36, etc.

[0101] When performing plasma processing such as etching or film formation, the gate valve 17 is opened and closed, and the wafer W is carried into the processing container PC and placed on the substrate mounting table 2. When a DC voltage of positive or negative polarity is applied to the electrode layer 3a2 from the DC power supply 30, the wafer W is electrostatically attracted by the electrostatic chuck 3 and held.

[0102] When processing is performed, desired gas is supplied from the gas supply source 23 into the processing container PC, and high-frequency power HF is applied to the substrate mounting table 2 from the first high-frequency power supply 33. High-frequency power LF may also be applied to the substrate mounting table 2 from the second high-frequency power supply 34. A negative DC voltage may also be applied to the gas shower head 20 from the variable DC power supply 26. As a result, the gas is separated above the wafer W to generate plasma, and the wafer W is subjected to plasma processing by the action of the plasma.

[0103] After the plasma treatment, a DC voltage with opposite polarity to that during electrostatic adsorption is applied to the electrode layer 3a2 from the DC power supply 30 to remove the charge of the wafer W. After the charge is removed, the wafer W is peeled off the electrostatic chuck 3 and carried out of the processing container PC through the gate valve 17.

[0104] (Variation) Figure 8 to Figure 24 Modifications of the substrate mounting table 2 are shown respectively. Figure 8 to Figure 24 Unless otherwise specified, the materials of the various structures involved in the illustrated modifications may be the materials described above.

[0105] right Figure 8 The modified example shown will be described. Figure 8 for Figure 1 The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body 4a and an insulating region 4e. The insulating region 4e corresponds to Figure 1The side wall portion 4b1 of the region ER1 shown. The resin region 3e is provided on the insulating region 4e, and has a tapered shape with the front end tapering in the direction away from the laminated portion 3a. The resin region 3e is in contact with the side SF2 of the laminated portion 3a and the insulating region 4e, and covers the side SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e and the insulating region 4e, and is in contact with the layer 3a3, the resin region 3e and the insulating region 4e. The layer 3a1 is a resin layer, and the material of the layer 3a1 is, for example, any one of a polyimide resin, a silicone resin, an epoxy resin or an acrylic resin (respectively in Figures 9 to 11 , Figure 14 to Figure 16 The material of layer 3a1 is the same as that of layer 3a1 described in the specification). Layer 3a3 is a resin layer, and the material of layer 3a3 is, for example, any one of polyimide resin, silicone resin, epoxy resin or acrylic resin (respectively in Figure 9 to Figure 24 The material of the main body 4a is, for example, SiC ( Figure 9 to Figure 24 The material of the main body 4a shown is also the same).

[0106] Figure 8 In the structure shown, the diameter of the electrode layer 3a2 is smaller than the diameter of each of the layers 3a1 and 3a3, the intermediate layer 3b covers the entire surface of the laminated portion 3a provided on the base 4, and the intermediate layer 3b covers a portion of the side wall portion 4b2 (at Figure 9 to Figure 24 The same also applies to each structure). And, Figure 8 In the structure shown, the coating layer 3c comprises a base layer 3c1 and a plurality of protrusions 3c2, the base layer 3c1 is in close contact with the intermediate layer 3b, and the plurality of protrusions 3c2 are provided on the upper surface 31 (at Figure 9 to Figure 24 The same in each structure of ). And, Figure 8 In the structure shown, the surface roughness of the upper surface 31 of the base layer 3c1 is 0.05-0.5 μm, and the intermediate layer 3b includes a matrix 3b1 and a plurality of granular bodies 3b2 (in Figure 9 to Figure 24 The same also applies to each structure of ). And, Figure 8 In the structure shown, the plurality of granular bodies 3b2 include exposed portions of the substrate 3b1, and the exposed portions are in contact with the layer 3a3 and the coating layer 3c ( Figure 9 to Figure 24 The same also applies to each structure of ). And, Figure 8 In the structure shown, the material of the base 3b1 contains resin or silane-based agents, and the material of the granular body 3b2 is ceramic ( Figure 9 to Figure 24 The same also applies to each structure of ).

[0107] right Fig. 9 The modified example shown will be described. Fig. 9 for Figure 1The substrate mounting table 2 has a resin region 3e and an insulating region 3f as an end region. The base 4 has a main body 4a and an insulating region 4e. The insulating region 4e corresponds to Figure 1 The side wall portion 4b1 of the region ER1 shown. The resin region 3e is arranged on the insulating region 4e between the insulating region 3f and the laminated portion 3a. The resin region 3e is in contact with the side SF2 of the laminated portion 3a, the insulating region 3f and the insulating region 4e, and covers the side SF2. The insulating region 3f is in contact with the insulating region 4e. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, the insulating region 3f and the insulating region 4e, and is in contact with the layer 3a3, the resin region 3e, the insulating region 3f and the insulating region 4e. The material of the insulating region 3f is, for example, an insulating material such as alumina (respectively at Fig.11 , Fig.15 , Fig.17 The material of the insulating region 3f described in is also the same).

[0108] right Fig.10 The modified example shown will be described. Fig.10 for Figure 1 The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body 4a and an insulating region 4e. The insulating region 4e corresponds to Figure 1 The side wall portion 4b1 of the region ER1 shown. The resin region 3e is provided on the insulating region 4e, and contacts the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body 4a. The insulating region 4e has a portion (convex portion 4e1) extending along the side surface SF2 of the electrostatic chuck 3. The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the convex portion 4e1 of the insulating region 4e. The intermediate layer 3b covers the layer 3a3, the resin region 3e and the insulating region 4e, and contacts the layer 3a3, the resin region 3e and the insulating region 4e.

[0109] right Fig.11 The modified example shown will be described. Fig.11 for Figure 1 The substrate mounting table 2 has an insulating region 3f as an end region, and the base 4 has a main body 4a and an insulating region 4e. The insulating region 4e corresponds to Figure 1The side wall portion 4b1 of the region ER1 shown in the figure. The insulating region 3f is provided on the insulating region 4e, and is in contact with the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the insulating region 3f and the insulating region 4e, and is in contact with the layer 3a3, the insulating region 3f and the insulating region 4e.

[0110] right Fig.12 The modified example shown will be described. Fig.12 for Figure 1 The illustrated region ER1 is a modified example of the structure of the substrate mounting table 2. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a. Fig.12 The illustrated laminated portion 3a includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. Fig.12 The laminated portion 3a shown does not have Figure 8 The adhesive layer 3a4 shown in the figure. The layer 3a1 is provided on the main body 4a and covers the surface of the main body 4a. The resin region 3e is provided on the layer 3a1 and contacts the side SF2 of the laminated part 3a and the layer 3a1, covers the side SF2, and has a tapered shape with the front end tapering away from the laminated part 3a. The intermediate layer 3b covers the layer 3a3, the resin region 3e and the layer 3a1 and contacts the layer 3a3, the resin region 3e and the layer 3a1. The layer 3a1 is an insulating layer or a resin layer (respectively Fig.13 , Figures 17 to 24 The same also applies to layer 3a1 described in the specification). When layer 3a1 is an insulating film, the material of layer 3a1 is ceramic. When layer 3a1 is a resin layer, the material of layer 3a1 is any one of polyimide resin, silicone resin, epoxy resin or acrylic resin. The material of layer 3a1 is the same as that of Fig.13 , Figures 17 to 24 The material of layer 3a1 described in is also the same.

[0111] right Fig.13 The modified example shown will be described. Fig.13 for Figure 1 A modified example of the structure of the substrate mounting table 2 in the region ER1 is shown. Fig.13 The base 4 of the substrate mounting table 2 shown has a conductive area 4f. Fig.13 The structure of the substrate mounting table 2 shown in FIG. 1 is different from that of the substrate mounting table 2 shown in FIG. Fig.12 The structure of the substrate mounting table 2 shown in FIG. 1 is different. The conductive region 4f is provided on the main body 4a and in contact with the main body 4a. The layer 3a1 is provided on the conductive region 4f and in contact with the conductive region 4f. The conductive region 4f is made of a conductive material such as aluminum or copper (respectively Fig.14 , Figure 21 to Figure 24 The material of the conductive region 4f described in is also the same).

[0112] right Fig.14 The modified example shown will be described. Fig.14 for Figure 1 A modified example of the structure of the substrate mounting table 2 in the region ER1 is shown. Fig.14 The structure of the substrate mounting table 2 shown has a conductive area 4f, Fig.14 The structure of the substrate mounting table 2 shown in FIG. 1 is different from that of the substrate mounting table 2 shown in FIG. Figure 8 The structure of the substrate mounting table 2 shown in FIG. 4 is different. The conductive region 4f is provided on the main body 4a and is in contact with the main body 4a. The insulating region 4e is provided on the conductive region 4f and is in contact with the conductive region 4f. The insulating region 4e is equivalent to Figure 1 The side wall portion 4b1 of the region ER1 is shown.

[0113] In addition, a conductive region 4f is provided. Fig.14 The structure shown in Figures 9 to 11 The same is true in Chinese.

[0114] right Fig.15 The modified example shown will be described. Fig.15 This is a modified example of the structure of the substrate mounting table 2 in the area ER1 facing the hole GT. The substrate mounting table 2 has a resin area 3e, an insulating area 3f, and a resin area 3g as end areas. The base 4 has a main body 4a and a side wall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is arranged on the main body 4a and the side wall 4b2. The inner diameter of each of the layer 3a1 and the layer 3a3 (the diameter of the area including the hole GT and defined by the side SF2) is smaller than the inner diameter of the main body 4a (the diameter of the area including the hole GT and defined by the side SF1). The layer 3a1 and the layer 3a3 extend on the base 4 in a manner overlapping with the side wall 4b2. The resin area 3g is provided between the main body 4a and the side wall 4b2, and is in contact with the adhesive layer 3a4. The resin area 3g extends in the vicinity of the laminated portion 3a in a manner extending toward the laminated portion 3a. The resin region 3e is in contact with the side surface SF2 and the side wall portion 4b2 of the laminated portion 3a, and covers the side surface SF2. The insulating region 3f is in contact with the side wall portion 4b2. The resin region 3e is arranged between the insulating region 3f and the laminated portion 3a on the side wall portion 4b2, and is in contact with the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0115] right Fig.16 The modified example shown will be described. Fig.16This is a modified example of the structure of the substrate mounting table 2 of the area ER1 facing the hole GT. The substrate mounting table 2 has a resin area 3e and a resin area 3g as end areas. The base 4 has a main body 4a and a side wall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is arranged on the main body 4a and the side wall 4b2. The inner diameter of each of the layer 3a1 and the layer 3a3 (the diameter of the area including the hole GT and defined by the side SF2) is smaller than the inner diameter of the main body 4a (the diameter of the area including the hole GT and defined by the side SF1). The layer 3a1 and the layer 3a3 extend on the base 4 in a manner overlapping with the side wall 4b2. The resin area 3g is provided between the main body 4a and the side wall 4b2, and is in contact with the adhesive layer 3a4. The resin area 3g extends in a manner extending toward the laminated part 3a in the vicinity of the laminated part 3a. The surface of the side wall portion 4b2 has a portion in contact with the laminate portion 3a and a portion extending along the side SF2 of the laminate portion 3a (a portion of the surface of the protrusion 4b21 included in the side wall portion 4b2). The resin region 3e is provided between the side SF2 of the laminate portion 3a and the portion of the surface of the side wall portion 4b2 (a portion of the surface of the protrusion 4b21). The resin region 3e is in contact with the side SF2 of the laminate portion 3a and the side wall portion 4b2 (particularly the protrusion 4b21), and covers the side SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0116] right Fig.17 The modified example shown will be described. Fig.17 This is a modification of the structure of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e as an end region, an insulating region 3f, and a resin region 3g. Fig.17 The illustrated laminated portion 3a includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. Fig.17 The laminated portion 3a shown does not have Figure 8The adhesive layer 3a4 shown in the figure. The layer 3a1 is provided on the main body 4a and covers the surface of the main body 4a. The base 4 includes the main body 4a and the side wall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is arranged on the main body 4a and the side wall 4b2. The inner diameter of the layer 3a3 (the diameter of the area defined by the side SF2 including the hole GT) is smaller than the inner diameter of the main body 4a (the diameter of the area defined by the side SF1 including the hole GT). The layer 3a3 extends on the base 4 in a manner that can overlap with the side wall 4b2. The resin region 3g is provided between the main body 4a and the side wall 4b2 and contacts the adhesive layer 3a5. The resin region 3g extends in the vicinity of the laminated portion 3a in a manner that expands toward the laminated portion 3a. The resin region 3e contacts the side SF2 and the side wall 4b2 of the laminated portion 3a and covers the side SF2. The insulating region 3f contacts the side wall 4b2. The resin region 3e is disposed between the insulating region 3f and the laminated portion 3a on the side wall portion 4b2 and is in contact with the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers the layer 3a3 and the resin region 3e and is in contact with the layer 3a3 and the resin region 3e.

[0117] right Fig.18 The modified example shown will be described. Fig.18 This is a modification of the structure of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e and a resin region 3g as end regions. Fig.18 The illustrated laminated portion 3a includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. Fig.18 The laminated portion 3a shown does not have Figure 8The adhesive layer 3a4 shown in the figure. The layer 3a1 is provided on the main body 4a and covers the surface of the main body 4a. The base 4 includes a main body 4a and a side wall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is arranged on the main body 4a and the side wall portion 4b2. The inner diameter of the layer 3a3 (the diameter of the area defined by the side SF2 including the hole GT) is smaller than the inner diameter of the main body 4a (the diameter of the area defined by the side SF1 including the hole GT). The layer 3a3 extends on the base 4 in a manner that can overlap with the side wall portion 4b2. The resin area 3g is provided between the main body 4a and the side wall portion 4b2 and contacts the adhesive layer 3a5. The resin area 3g extends in a manner that expands toward the laminated portion 3a in the vicinity of the laminated portion 3a. The surface of the side wall portion 4b2 has a portion in contact with the laminate portion 3a and a portion extending along the side SF2 of the laminate portion 3a (a portion of the surface of the protrusion 4b21 included in the side wall portion 4b2). The resin region 3e is provided between the side SF2 of the laminate portion 3a and the portion of the surface of the side wall portion 4b2 (a portion of the surface of the protrusion 4b21). The resin region 3e is in contact with the side SF2 of the laminate portion 3a and the side wall portion 4b2 (particularly the protrusion 4b21), and covers the side SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0118] right Fig.19 The modified example shown will be described. Fig.19 This is a modification of the structure of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3g as an end region. Fig.19 The illustrated laminated portion 3a includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. Fig.19 The laminated portion 3a shown does not have Figure 8 The adhesive layer 3a4 shown in the figure. The layer 3a1 is provided on the main body 4a and covers the surface of the main body 4a. The base 4 includes the main body 4a and the side wall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is arranged on the main body 4a and the side wall 4b2. The inner diameter of the layer 3a3 (the diameter of the area defined by the side SF2 including the hole GT) is larger than the inner diameter of the main body 4a (the diameter of the area defined by the side SF1 including the hole GT). The layer 3a3 does not overlap with the side wall 4b2, but extends only on the main body 4a. The resin area 3g is provided between the main body 4a and the side wall 4b2, and contacts the intermediate layer 3b and the side SF2 of the laminated part 3a, and covers the side SF2. The resin area 3g extends in the vicinity of the intermediate layer 3b in a manner extending toward the intermediate layer 3b. The intermediate layer 3b covers the layer 3a3, the resin region 3g, and the side wall portion 4b2, and is in contact with the layer 3a3, the resin region 3g, and the side wall portion 4b2.

[0119] right Fig. 20 The modified example shown will be described. Fig. 20 This is a modified example of the structure of the substrate mounting table 2 in the area ER1 facing the hole GT. The substrate mounting table 2 has a resin area 3g as an end area. The resin area 3g is provided between the main body 4a and the side wall 4b2 and is in contact with the intermediate layer 3b. The distance between the main body 4a and the side wall 4b2 (the width of the resin area 3g) gradually increases toward the intermediate layer 3b. In this point, the distance between the main body 4a and the side wall 4b2 (the width of the resin area 3g) is Fig. 20 The structure of the substrate mounting table 2 shown is similar to Fig.19 The structure of the substrate mounting table 2 shown is different.

[0120] right Fig.21 The modified example shown will be described. Fig.21 This is a modified example of the structure of the substrate mounting table 2 in the region ER1 facing the hole GT. Fig.21 The structure of the substrate mounting table 2 shown has a conductive area 4f, Fig.21 The structure of the substrate mounting table 2 shown in FIG. 1 is different from that of the substrate mounting table 2 shown in FIG. Fig.19 The structure of the substrate mounting table 2 shown is different. The conductive region 4f is provided on the main body portion 4a and is in contact with the main body portion 4a. The layer 3a1 is provided on the conductive region 4f and is in contact with the conductive region 4f.

[0121] right Fig. 22 The modified example shown will be described. Fig. 22 This is a modified example of the structure of the substrate mounting table 2 in the region ER1 facing the hole GT. Fig. 22 The structure of the substrate mounting table 2 shown has a conductive area 4f, Fig. 22 The structure of the substrate mounting table 2 shown in FIG. 1 is different from that of the substrate mounting table 2 shown in FIG. Fig. 20 The structure of the substrate mounting table 2 shown is different. The conductive region 4f is provided on the main body 4a and in contact with the main body 4a. The layer 3a1 is provided on the conductive region 4f and in contact with the main body 4a and the conductive region 4f.

[0122] In addition, a conductive region 4f is provided. Fig.21 and Fig. 22 The structures shown in Figure 15 to Figure 18 The same is true in Chinese.

[0123] right Fig.23 The modified example shown will be described. Fig.23 This is a modified example of the structure of the substrate mounting table 2 in the region ER1. Fig.23In the structure of the substrate mounting table 2 shown, a recessed portion 4a1 is provided on the surface of the main body portion 4a. A conductive region 4f, a laminated portion 3a, and a resin region 3e are provided in the recessed portion 4a1. Fig.23 The illustrated laminated portion 3a includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. Fig.23 The laminated portion 3a shown does not have Figure 8 The adhesive layer 3a4 shown in the figure. The layer 3a1 is provided on the conductive region 4f. The electrode layer 3a2, the adhesive layer 3a5, the layer 3a3 and the resin region 3e are provided on the layer 3a1. The resin region 3e is in contact with the layer 3a1 and the side SF2 of the laminated portion 3a, and covers the side SF2. The intermediate layer 3b covers the layer 3a3, the resin region 3e and the main body 4a, and is in contact with the layer 3a3, the resin region 3e and the main body 4a.

[0124] right Fig.24 The modified example shown will be described. Fig.24 This is a modified example of the structure of the substrate mounting table 2 in the region ER1. Fig.24 In the structure of the substrate mounting table 2 shown, the conductive region 4f is provided on the main body portion 4a, and the laminated portion 3a is provided on the conductive region 4f. Fig.24 The illustrated laminated portion 3a includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. Fig.24 The laminated portion 3a shown does not have Figure 8 The adhesive layer 3a4 shown in the figure is shown in the figure. The layer 3a1 is provided on the conductive region 4f. The resin region 3e is provided on the main body 4a, and contacts the main body 4a and the side SF2 of the laminated part 3a and the side of the conductive region 4f, and covers the side SF2 and the side of the conductive region 4f, and has a tapered shape with the front end tapered away from the laminated part 3a. The intermediate layer 3b covers the layer 3a3, the resin region 3e and the main body 4a, and contacts the layer 3a3, the resin region 3e and the main body 4a.

[0125] The above mentioned Figure 8 to Figure 24 In the substrate mounting table 2 of the structures shown in the figures, the side surface SF2 of the electrostatic chuck 3 is covered with the resin region 3e of the material with relatively high viscosity, and the resin region 3e is solidified or the side surface SF2 of the electrostatic chuck 3 is covered with the insulating region 3f. Therefore, the generation of cracks in the intermediate layer 3b and the covering layer 3c covering the resin region 3e or the insulating region 3f that maintains its shape is suppressed, and together with the structure of the side surface SF2 of the electrostatic chuck 3 (resin region 3e or insulating region 3f), the intermediate layer 3b and the covering layer 3c can be formed into a good shape.

[0126] According to an exemplary embodiment, a technique for suppressing discharge between a substrate mounting table and a substrate can be provided.

Claims

1. A substrate mounting table, comprising: Pedestal; and an electrostatic chuck disposed on the base, The electrostatic chuck comprises: A laminated portion disposed on the base, the laminated portion having an upper surface and a side surface, the laminated portion comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; A first coating layer covering the upper surface and the side surfaces of the laminated portion; and The second coating layer covers the first coating layer, wherein the second coating layer includes a ceramic material.

2. The substrate mounting table according to claim 1, wherein: The first cladding layer has an annular portion surrounding the side surface of the laminated portion, and the annular portion has a lower surface in contact with a susceptor.

3. The substrate mounting table according to claim 2, wherein: The annular portion has a first inclined surface located above the lower surface.

4. The substrate mounting table according to claim 3, wherein: The second cladding layer has a second inclined surface along the first inclined surface.

5. The substrate mounting table according to claim 3, wherein: The first inclined surface is inclined at an angle of 45° or less relative to the lower surface.

6. The substrate mounting table according to claim 2, wherein: The annular portion has a first curved surface located above the lower surface.

7. The substrate mounting table according to claim 6, wherein: The second cladding layer has a second curved surface along the first curved surface.

8. The substrate mounting table according to claim 2, wherein: The laminated portion includes a first adhesive layer provided between the first insulating layer and the base.

9. The substrate mounting table according to claim 8, wherein: The laminated portion includes a second adhesive layer provided between the second insulating layer and the first covering layer.

10. The substrate mounting table according to claim 1, wherein: The laminated portion includes a second adhesive layer provided between the second insulating layer and the first covering layer.

11. The substrate mounting table according to claim 1, wherein: The first insulating layer includes a ceramic material, or a resin material selected from polyimide, silicone resin, epoxy resin and acrylic resin.

12. The substrate mounting table according to claim 11, wherein: The second insulating layer includes a resin material selected from the group consisting of polyimide, silicone resin, epoxy resin, and acrylic resin.

13. The substrate mounting table according to claim 1, wherein: The first coating layer includes a matrix material and a granular material dispersed in the matrix material, and At least a portion of the granular material is in contact with the second insulating layer and the upper surface of the laminate.

14. The substrate mounting table according to claim 13, wherein: The matrix material comprises silicone and the granular material comprises a ceramic material.

15. A plasma processing apparatus, comprising: Plasma processing chamber; A substrate mounting platform is disposed in the plasma processing chamber, and the substrate mounting platform comprises: a base; and An electrostatic chuck is disposed on the base, and the electrostatic chuck comprises: A laminated portion disposed on the base, the laminated portion having an upper surface and a side surface, the laminated portion comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; A first coating layer covering the upper surface and the side surfaces of the laminated portion; and a second coating layer covering the first coating layer, wherein the second coating layer comprises a ceramic material; as well as An RF power source is electrically connected to the substrate mounting table.

16. The plasma processing apparatus according to claim 15, wherein: The RF power supply is configured to generate RF power having a frequency below 3 MHz.

17. The plasma processing apparatus according to claim 15, wherein: The RF power source is electrically connected to the susceptor.

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