Lift pin, lift pin apparatus, semiconductor processing system and method of manufacture

Abstract

A lift pin includes a lift pin body disposed along a lift pin axis, the lift pin body having a contact pad, a rod section, a neck section, and a span feature. A contact pad is defined at a first end of the lift pin body, a rod section extends from the contact pad, and a neck section extends from the rod section. A span feature is defined at the second end of the lift pin body, is connected to the contact pad by the neck section and the rod section, and has a secondary width and a primary width. The secondary width is equal to a neck diameter defined by the neck section, the primary width is greater than the secondary width, and the primary width is greater than a stem diameter defined by the stem section. Lift pin devices, semiconductor processing systems, and methods of manufacturing semiconductor processing systems are also described.

Description

Technical Field

[0001] The present disclosure generally relates to depositing a material layer onto a substrate. More specifically, the present disclosure relates to positioning and removing a substrate on a substrate support before and after depositing a material layer onto the substrate, such as during deposition of the material layer during fabrication of a semiconductor device. Background Art

[0002] During the manufacture of semiconductor devices, such as logic and memory devices, material layers are typically deposited onto a substrate. Material layer deposition is typically accomplished by positioning the substrate on a substrate support within a reaction chamber, heating the substrate to a desired deposition temperature, and exposing the substrate to a material layer precursor under selected ambient conditions to allow the material layer to be deposited onto the substrate. Once the material layer has developed the desired properties, exposure of the substrate to the material layer precursor is typically stopped, the substrate is removed from the substrate support, and the substrate is removed from the reaction chamber for further processing, as appropriate for the semiconductor device being manufactured. Positioning can be accomplished using lift pins, which are typically slidably received within the substrate and slide through the substrate to position the substrate on and remove it from the substrate support.

[0003] One challenge with using lift pins to position and remove substrates within a reaction chamber is the accumulation of material within a mechanical gap defined within the interior of the reaction chamber, such as between the lift pins and the substrate support. For example, during some material layer deposition operations, material may accumulate on the rods of the lift pins. During movement of the lift pins through the substrate support, the accumulated material may be carried by the rods of the lift pins, potentially increasing the resistance of the lift pins to sliding through the substrate support and / or causing the lift pins to bind within the substrate support. When mounted on a substrate, material may also accumulate on the tips of the lift pins, increasing the force that needs to be applied to the lift pins to initiate sliding of the lift pins through the substrate support to remove the substrate from the substrate support once deposition of the material layer is complete.

[0004] Various countermeasures exist to limit lift pins from becoming stuck within the substrate. For example, the lift pins may be maintained at a temperature different from that required for deposition of the material layer within the reaction chamber, limiting the tendency for material to accumulate on the lift pins. The lift pins may be separated from the material layer precursor used in the deposition process, such as by arranging the lift pins within a bellows or providing a purge to the lift pin rods, also limiting the tendency for material to accumulate on the lift pins during deposition of the material layer onto the substrate. And the interior of the reaction chamber may be etched after the material layer is deposited onto the substrate to remove the accumulated material before the accumulation reaches a size sufficient to cause the lift pins to become stuck within the substrate support. While generally satisfactory for its intended purpose, such countermeasures may increase the complexity of the reaction chamber architecture and / or increase the cost of ownership of the reaction chamber due to increased use of consumables and / or reduced reaction chamber throughput.

[0005] Such systems and methods are generally satisfactory for their intended purposes. However, there remains a need for improved lift pins, lift pin arrangements, and semiconductor processing systems, as well as methods of making lift pin arrangements for semiconductor processing systems. The present solution provides a solution to this need. Summary of the invention

[0006] A lifting pin is provided. The lifting pin includes a lifting pin body arranged along a lifting pin axis and having a contact pad, a rod segment, a neck segment, and a span feature. The contact pad is defined at a first end of the lifting pin body, the rod segment extends from the contact pad, and the neck segment extends from the rod segment. The span feature is defined at a second end of the lifting pin body, connected to the contact pad by the neck segment and the rod segment of the lifting pin body, and has a secondary width and a major width. The secondary width of the span feature is substantially equal to a neck diameter defined by the neck segment of the lifting pin body, the major width of the span feature is greater than the secondary width of the span feature, and the major width of the span feature is further greater than the rod diameter defined by the neck segment of the lifting pin body.

[0007] In addition to or in lieu of one or more of the features described above, further examples may include the lift pin body being formed of a ceramic material.

[0008] In addition to or in lieu of one or more of the features described above, further examples may include the secondary width being offset by approximately 90 degrees from the primary width about the lift pin axis.

[0009] In addition to or as an alternative to one or more of the above features, further examples may include a span feature having a main lobe and a secondary lobe, the main width spanning the main lobe and the secondary width spanning the secondary lobe.

[0010] In addition to or as an alternative to one or more of the above features, further examples may include the main lobe being a first main lobe, and the span feature having a second main lobe separated from the first main lobe by a secondary lobe.

[0011] In addition to or in lieu of one or more of the features described above, further examples may include the second main lobe being offset by approximately 180 degrees from the first main lobe.

[0012] In addition to or as an alternative to one or more of the above features, further examples can include that the secondary lobe is the primary lobe, and the span feature has a secondary lobe, wherein the secondary lobe is separated from the primary lobe by the primary lobe.

[0013] In addition to or in lieu of one or more of the features described above, further examples can include the second lobe being offset from the first lobe by approximately 180 degrees.

[0014] In addition to or as an alternative to one or more of the features described above, further examples can include a span feature having a first planar facet and a second planar facet, and wherein the major width intersects both the first planar facet and the second planar facet.

[0015] In addition to or as an alternative to one or more of the features described above, further examples can include a span feature having two or more arcuate facets defined between a major width and a minor width.

[0016] In addition to or in lieu of one or more of the features described above, further examples can include spanning features having intermediate planar facets that deviate from the major and minor widths.

[0017] In addition to or in lieu of one or more of the features described above, further examples can include the first planar facet and the second planar facet being two of at least six planar facets defined by a span feature, wherein the span feature has at least eight arcuate facets.

[0018] A lifting pin device is provided. The lifting pin device includes a lifting pin as described above and a lifting pin counterweight with a counterweight body. The counterweight body has a through hole extending therethrough with a flange section thereon. The lifting pin body is slidably received in the through hole and is carried by a first flange portion and a second flange portion, the first flange portion and the second flange portion extending toward a lifting pin axis defined by the lifting pin body.

[0019] In addition to or instead of one or more of the above features, further examples may include a through hole having a first through hole section and a second through hole section separated by multiple flanges, the first through hole section connecting the upper surface of the counterweight body to the multiple flanges, and the second through hole section connecting the multiple flanges to the lower surface of the counterweight body.

[0020] In addition to or as an alternative to one or more of the features described above, further examples may include the first through-hole segment having a generally circular shape between the upper surface and the plurality of flanges, and the second through-hole having a generally cross shape extending between the lower surface and the plurality of flanges.

[0021] In addition to or in lieu of one or more of the features described above, further examples may include a first through hole segment having a diameter substantially equal to a width of a rod segment of a lift pin body, a second through hole segment having a second segment major width greater than a major width of a span feature of the lift pin body, and a second through hole segment having a second segment minor width less than the major width of a span feature of the lift pin body.

[0022] In addition to or in lieu of one or more of the above features, further examples may include the lift pin counterweight having a frustoconical shape, a first through hole segment having a diameter substantially equal to a width of a rod segment of the lift pin body, and a second through hole segment having a width substantially equal to a width of a span feature of the lift pin body.

[0023] A semiconductor processing system is provided. The semiconductor processing system includes a chamber body formed of a quartz material, a substrate support disposed within the chamber body and configured to support a substrate during deposition of a material layer onto the substrate, a lift pin as described above, and a lift pin counterweight having a through hole. The lift pin is slidably received in a lift pin hole extending through the substrate support, and a portion of a stem segment and a span feature of the lift pin is disposed in the through hole, so that the lift pin counterweight is carried by the lift pin through the span feature and the neck segment of the lift pin body.

[0024] In addition to or in lieu of one or more of the features described above, further examples may include the lift pin body of the lift pin being formed of silicon carbide and the weight body of the lift pin counterweight being formed of quartz.

[0025] A method of manufacturing a lift pin arrangement for a semiconductor processing system is provided. The method includes, at a lift pin as described above, arranging a lift pin counterweight having a counterweight body, the counterweight body defining a through hole therethrough along a lift pin axis; and rotating the counterweight body about the lift pin axis so that a flange portion major width is aligned with a major width of a span feature of a lift pin body. The counterweight body of the lift pin counterweight is translated along the lift pin axis so that the span feature of the lift pin body is axially located between a contact pad of the lift pin body and the span feature of the lift pin body; and rotating the counterweight body about the lift pin axis so that a first flange portion and a second flange portion of the counterweight body cover the major width of the span feature of the lift pin body. The counterweight body is then translated along the lift pin axis in a direction opposite to the contact pad so that the first flange portion and the second flange portion of the counterweight body abut the span feature of the lift pin body so that the lift pin counterweight is carried by the span feature of the lift pin body to exert a downward force on the lift pin during movement of the lift pin through a substrate support within a chamber arrangement of a semiconductor processing system.

[0026] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] These and other features, aspects and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than to limit the present invention.

[0028] Figure 1 is a schematic diagram of a semiconductor processing system including a lift pin apparatus according to the present disclosure, showing the lift pin apparatus supported within a chamber apparatus of the semiconductor processing system;

[0029] Figure 2 According to the first example of the present disclosure Figure 1 a cross-sectional side view of a chamber arrangement of a semiconductor processing system of the present invention, showing a lift pin arrangement including lift pins and lift pin weights carried by a substrate support during rotation about an axis of rotation within the chamber arrangement;

[0030] Figures 3 to 5 yes Figure 2 1, showing a view of a chamber arrangement of the embodiment of the present invention, showing a lift pin arrangement placing a substrate on and removing a substrate from a substrate support before and after depositing a layer of material onto the substrate;

[0031] Figure 6 According to the example of the present disclosure Figure 1 A side view of a lift pin assembly showing the lift pin according to this example being decomposed from the lift pin counterweight along the lift pin axis;

[0032] Figures 7 to 9 According to the example of the present disclosure Figure 6 Side and bottom views of a portion of a lift pin of , showing facets defined on a span feature of the lift pin for supporting a lift pin counterweight on the lift pin;

[0033] Figures 10 to 12 According to the example of the present disclosure Figure 6 sectional, top and bottom views of a lift pin counterweight showing a through hole extending through the lift pin counterweight and a flange arrangement for supporting the lift pin counterweight on the lift pin;

[0034] Figures 13 to 16 According to the example of the present disclosure Figure 7 A cross-sectional side view of a lift pin and a lift pin weight, sequentially showing the lift pin weight assembled to the lift pin according to this example; and

[0035] Fig.17 is a block diagram of a method of manufacturing a lift pin apparatus showing operations of the method according to an illustrative and non-limiting example of the method.

[0036] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0037] Reference will now be made to the drawings, wherein like reference numerals represent similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not limitation, Figure 1 A partial view of a lift pin arrangement including a lift pin according to the present invention is shown in FIG. 1 and is generally indicated by the reference numeral 100. Figure 2-17 Other examples of lift pins, lift pin arrangements, semiconductor processing systems including lift pin arrangements, and methods of manufacturing lift pin arrangements for semiconductor processing systems, or aspects thereof, according to the present disclosure are provided, as will be described. The lift pins and lift pin arrangements of the present invention may be used to position and remove a substrate on a substrate support in a semiconductor processing system for depositing a layer of material onto a substrate using a chemical vapor deposition technique, such as in a semiconductor processing system having a rotating and stationary substrate support, where material may accumulate within a mechanical gap defined between the lift pins and the substrate support, the lift pins being used to position the substrate on the substrate support, the substrate support being used to support the substrate during deposition, although the present invention is not limited to any particular type of substrate support or deposition technique.

[0038] refer to Figure 1 , a semiconductor processing system 200 including a lift pin apparatus 100 according to an example of the present disclosure is shown. In the illustrated example, the semiconductor processing system 200 includes a precursor source 202, a chamber apparatus 204, an exhaust source 206, and a controller 208. The precursor source 202 includes a material layer precursor 10, and is configured to provide a flow of the material layer precursor 10 to the chamber apparatus 204. The chamber apparatus 204 is connected to the exhaust source 206, and is configured to deposit a material layer 4 onto a substrate 2 using the flow of the material layer precursor 10 received from the precursor source 202. The exhaust source 206 is fluidically coupled to an external environment 12 outside the chamber apparatus 204, and is configured to transfer a flow of residual material layer precursors and / or reaction products 14 emitted by the chamber apparatus 204 to the external environment 12, and may include one or more vacuum pumps and / or abatement devices. The controller 208 is operably connected to the chamber device 204 , for example, to place the substrate 2 in the chamber device 204 before depositing the material layer 4 on the substrate 2 , and to remove the substrate 2 after depositing the material layer 4 on the substrate 2 .

[0039] In some examples, the material layer precursor 10 may include a silicon-containing material layer precursor. Examples of suitable silicon-containing material layer precursors include silane (SiH4), dichlorosilane (H2SiCl2), and disilane (Si2H6). According to some examples, the material layer precursor 10 may include a germanium-containing material layer precursor, such as germane (GeH4). It is conceivable that the material layer precursor 10 may include a dopant-containing material layer precursor, such as an n-type dopant or a p-type dopant. Non-limiting examples of suitable n-type dopants include arsine (AsH3); non-limiting examples of suitable p-type dopants include diborane (B2H6) and phosphine (PH3). It is also conceivable that, according to some examples, the material layer precursor 10 may include a carrier gas / purge gas such as hydrogen (H2) and / or an etchant source including an etchant such as hydrochloric acid (HCl), and still be within the scope of the present disclosure.

[0040] refer to Figure 2 , a chamber apparatus 204 according to an example of the present disclosure is shown. In the example shown, the chamber apparatus 204 includes a chamber body 210, an injection flange 212, an exhaust flange 214, an upper heater element array 216, a lower heater element array 218, and a lift and rotation module 220. The chamber apparatus 204 also includes a divider 222, a substrate support 224, a support member 226, an axis member 228, a lift pin actuator 230, and a lift pin apparatus 100. Although shown and described herein as including certain elements and having a specific arrangement, namely a single wafer cross-flow arrangement with a rotating substrate support 224, it should be understood and appreciated that the chamber apparatus 204 may include other elements and / or exclude elements shown and described herein, and / or have and have other arrangements in other examples, and still be within the scope of the present disclosure.

[0041] The chamber body 210 extends longitudinally between an injection end 242 and a longitudinally opposite exhaust end 244. The injection flange 212 is adjacent to the injection end 242 of the chamber body 210 and couples the precursor source 202 to the chamber body 210 to deliver the material layer precursor 10 to the interior 248 of the chamber body 210. The exhaust flange 214 is adjacent to the exhaust end 244 of the chamber body 210 and is connected to the chamber body 210 to deliver the residual precursor and / or reaction product 14 exhausted by the chamber device 204 to the exhaust source 206. It is contemplated that the chamber body 210 has an upper wall 232, a lower wall 234, a first side wall 236, and a second side wall 238. The upper wall 232 longitudinally spans the injection end 242 and the exhaust end 244 of the chamber body 210. The lower wall 234 is similar to the upper wall 232 and is additionally spaced apart from the upper wall 232 by the interior 248 of the chamber body 210. The first sidewall 236 and the second sidewall 238 couple the lower wall 234 to the upper wall 232 and are laterally spaced apart from each other by an interior 248 of the chamber body 210. It is contemplated that the chamber body 210 is formed of a transparent material 240, such as a material that is transmissive to electromagnetic radiation within the infrared band, such as a ceramic material such as quartz or sapphire. It is contemplated that the chamber body 210 may have a plurality of external ribs 246 extending around the outer surface of the chamber body 210 and longitudinally spaced apart from each other between the injection end 242 and the discharge end 244 of the chamber body 210. As shown and described herein, the upper wall 232 and the lower wall 234 are substantially planar in shape. In view of the present disclosure, those skilled in the art will appreciate that either (or both) of the upper wall 232 and the lower wall 234 may have an arcuate profile and / or a dome-like shape and still be within the scope of the present disclosure.

[0042] The upper array of heater elements 216 is configured to deliver radiant heat into the interior 248 of the chamber body 210, for example using electromagnetic radiation in the infrared band, and in this regard is supported above the chamber body 210. It is contemplated that the upper array of heater elements 216 includes a plurality of heater elements, such as linear filament-type lamps, extending transversely between the first side wall 236 and the second side wall 238 of the chamber body 210 and spaced longitudinally from one another between the injection end 242 and the exhaust end 244 of the chamber body 210. The lower array of heater elements 218 is similar to the upper array of heater elements 216, additionally supported below the lower wall 234 of the chamber body 210, and may further include a plurality of linear filament-type lamps extending longitudinally between the injection end 242 and the exhaust end 244 of the chamber body 210 and spaced transversely from one another between the first side wall 236 and the second side wall 238. Although shown and described herein as including linear lamps having a particular orientation, it should be understood and appreciated that either (or both) of the upper heater element array 216 and the lower heater element array 218 may have linear filament-type lamps having different orientations, and / or include bulb-type lamps, and still be within the scope of the present disclosure.

[0043] The divider 222 is fixed within the interior 248 of the chamber body 210 and divides the interior 248 into an upper chamber 250 and a lower chamber 252. It is contemplated that the divider 222 is further formed of an opaque material 256, such as a material that is opaque to electromagnetic radiation within the infrared band, and the divider 222 further defines a divider hole 254 therethrough. It is contemplated that the divider hole 254 fluidly couples the upper chamber 250 of the chamber body 210 to the lower chamber 252 of the chamber body 210, and the substrate support 224 is supported to rotate R about the rotation axis 258 within the interior 248 of the chamber body 210 and at least partially within the divider hole 254. In some examples, the opaque material 256 may include a carbonaceous material, such as graphite and / or pyrolytic carbon. According to some examples, the opaque material 256 may include a ceramic material, such as silicon carbide, that coats an underlying bulk carbonaceous material or forms a bulk material defining the divider 222.

[0044] The substrate support 224 is configured to position the substrate 2 during deposition of the material layer 4 onto the substrate 2, and in this case, the substrate support 224 is supported within the divider hole 254 for rotation about the rotation axis 258. It is contemplated that the substrate support 224 may be formed of an opaque material 260, the composition of which may be similar or different from the composition of the opaque material 256 forming the divider 222. It is also contemplated that the substrate support 224 may include a base structure, and that the substrate support 224 may be rotationally fixed R relative to the support member 226 about the rotation axis 258. In this regard, it is contemplated that the support member 226 is disposed within the lower chamber 252 of the chamber body 210 and along the rotation axis 258, the support member 226 connects the substrate support 224 to the shaft member 228, and the shaft member 228 extends through the lower wall 234 of the chamber body 210 and operably connects the lifting and rotation module 220 to the substrate support 224, so that the lifting and rotation module 220 can rotate the substrate support 224 around the rotation axis 258 during deposition of the material layer 4 onto the substrate 2.

[0045] It is contemplated that the substrate support 224 defines one or more lift pin holes 262 therethrough, and that the lift pins 102 of the lift pin arrangement 100 are slidably received within the lift pin holes 262. It is also contemplated that the lift pin actuator 230 is (at least partially) disposed within the lower chamber 252 of the chamber body 210, e.g., around the shaft member 228, and also extends through the lower wall 234 of the chamber body 210. The lift pin actuator 230 is operably associated with the lift and rotate module 220 for movement between a first position 264 and a second position 266 to place a substrate (e.g., substrate 2) on and remove it from the substrate support 224. When in the first position 264, the lift pin arrangement 100 is suspended from the substrate support 224, the lift pin arrangement 100 is spaced apart from the lift pin actuator 230, and is carried by the substrate support 224 during rotation about the rotation axis 258. When in the second position 266, the lift pin actuator 230 abuts the lift pin assemblies 100 such that the lift pins 102 protrude above the substrate support 224. In view of this disclosure, one skilled in the art will appreciate that movement between the first position 264 and the second position 266 positions and removes the substrate 2 from the substrate support 224. In view of this disclosure, one skilled in the art will also appreciate that movement between the first position 264 and the second position 266 also enables loading and unloading of substrates from the chamber body 210, such as using a substrate transfer robot 270 having an end effector 272 coupled to the chamber body 210 via a gate valve 268. As shown and described herein, the chamber apparatus 204 includes three (3) lift pin assemblies 100, it being understood and appreciated that in other examples, the chamber apparatus 204 may have fewer or additional lift pin assemblies 100 and still be within the scope of this disclosure.

[0046] refer to Figure 3-5 , showing the placement and removal of a substrate 2 using a lift pin arrangement 100. Figure 3 As shown, the substrate 2 is placed in the chamber body 210 by opening the gate valve 268 and advancing the end effector 272 into the upper chamber 250 of the chamber body 210 using the substrate transfer robot 270 so that the position of the substrate 2 above the substrate support 224 is aligned with the substrate support 224. The lift and rotation module 220 then translates the lift pin actuator 230 toward the substrate support 224 between the first position 264 and the second position 266 along the rotation axis 258. As the lift pin actuator 230 translates along the rotation axis 258, the lift pin actuator 230 abuts against the lift pin counterweight 104 supported on the lift pin 102, and further translation of the lift pin actuator 230 drives the lift pin 102 through the substrate support 224, so that the lift pin 102 protrudes above the substrate support 224 and advances upward in the upper chamber 250 of the chamber body 210.

[0047] The lift pins 102 continue to advance until the lift pins 102 abut against the lower surface 6 of the substrate 2, after which subsequent advancement transfers the substrate 2 to the lift pin apparatus 100. The substrate transfer robot 270 then withdraws the end effector 272 from the upper chamber 250 of the chamber body 210, and the lift and rotate module 220 translates the lift pin actuator 230 downwardly between the second position 266 and the first position 264 of the lift pin actuator 230 within the lower chamber 252 of the chamber body 210. The downward translation of the lift pin actuator 230 withdraws support from the lift pin apparatus 100, and the lift pins 102 slide downwardly through the lift pin holes 262 by gravity acting on the lift pin counterweights 104 and the mass of the lift pins 102 and substrate 2. The lift pins 102 continue to slide downwardly through the lift pin holes 262 until the contact pads 124 (e.g., Figure 6 262 , further downward translation of the lift pin actuator 230 causes the lift pin arrangement 100 to depend from the substrate support 224 within the lower chamber 252 of the chamber body 210 .

[0048] like Figure 4 As shown, the deposition of the material layer 4 is accomplished by heating the substrate 2 to a predetermined material layer deposition temperature, rotating R the substrate support 224 and thereby rotating the substrate 2 around the rotation axis 258, and exposing the substrate 2 to the material layer precursor 10 under conditions where the material layer 4 is deposited on the substrate 2. Once the material layer 4 reaches the predetermined material layer thickness, the material layer precursor 10 stops flowing to the interior 248 of the chamber body 210. The substrate 2 may then be allowed to cool, for example to a substrate unloading temperature, by allowing the substrate 2 to remain seated on the substrate support 224 and / or by removing the substrate 2 from the substrate support 224 using the lift pin device 100 and the lift pin actuator 230. In view of this disclosure, it will be understood by those skilled in the art that during the rotation R around the rotation axis 258, the lift pin device 100 is carried by the substrate support 224, and the lift pin device 100 thereby rotates R around the rotation axis 258 with the substrate support 224 during the deposition of the material layer 4 on the upper surface 8 of the substrate 2.

[0049] like Figure 5As shown, removal of the substrate 2 is achieved by aligning the lift pin actuator 230 with the lift pin device 100 rotating about the rotation axis 258 such that the lift pin device 100 covers the lift pin actuator 230. The lift pin actuator 230 is then driven upwardly within the lower chamber 252 of the chamber body 210 between the first position 264 and the second position 266 using the lift and rotation module 220. The upward translation of the lift pin actuator 230 along the rotation axis 258 toward the substrate support 224 causes the lift pin actuator 230 to abut against the lift pin counterweight 104 within the lower chamber 252 of the chamber body 210, after which further upward translation causes the lift pins 102 to slide upwardly through the lift pin holes 262 such that the lift pins 102 protrude from the substrate support 224. The protrusion of the lift pins 102 above the substrate support 224 removes the substrate 2 from the substrate support 224 and transfers the substrate 2 to the lift pin device 100, after which further translation of the lift pin actuator 230 supports the substrate 2 in a position above the substrate support 224 along the rotation axis 258 and is located in the upper chamber 250 of the chamber body 210.

[0050] Once the lift pin actuator 230 reaches the second position 266 and the substrate 2 is supported above the substrate support 224, the gate valve 268 is again opened and the end effector 272 is advanced into the upper chamber 250 of the chamber body 210 by the substrate transfer robot 270. It is contemplated that the substrate transfer robot 270 advances the end effector 272 so that the end effector 272 is vertically positioned between the substrate 2 and the substrate support 224. So positioned, the lift pin actuator 230 is again translated downwardly from the second position 266 of the lift pin actuator 230 to the first position 264 within the lower chamber 252 of the chamber body 210. The downward translation of the lift pin actuator 230 causes the lift pin assembly 100, and more specifically the lift pins 102, to slide downwardly through the lift pin holes 262 and retract in the general direction of the substrate support 224. It is contemplated that the retraction causes the substrate 2 to be transferred from the lift pins 102 to the end effector 272, and the substrate transfer robot 270 thereafter withdraws the end effector 272 and the substrate 2 carried by the end effector 272 from the upper chamber 250 of the chamber body 210. The substrate 2 can then be sent for further processing, and the chamber apparatus 204 is ready to deposit another material layer onto another substrate, or another layer onto the substrate 2, which is suitable for semiconductor devices manufactured using the material layer 4.

[0051] As described above, during placement of a substrate on and / or removal of a substrate from the substrate, the lift pins may bind within the substrate support. For example, binding may occur due to tilting of the lift pins within the substrate support. Binding may also occur due to material buildup on the lift pins and / or within the lift pin holes in which the lift pins are received, such as when residual precursors and / or reaction products penetrate into the atmosphere containing the lift pins during deposition of the material layer, accumulate on the lift pins, and are thereafter carried into the lift pin holes during sliding of the lift pins through the lift pin holes. In order to limit (or completely eliminate) such binding, a lift pin arrangement 100 is provided.

[0052] refer to Figure 6-12 , shows a lift pin device 100 according to an example of the present disclosure. Figure 6 As shown, the lift pin device 100 generally includes a lift pin 102 and a lift pin counterweight 104. The lift pin 102 includes a lift pin body 106. The lift pin body 106 defines a lift pin axis 108 (or is arranged along it) and is configured to be slidably received in a lift pin hole 262 ( Figure 2 ), the lift pin hole 262 extends through the substrate support 224 ( Figure 2 As shown). The lifting pin body 106 is further configured to Figure 1 as shown) is deposited onto substrate 2 ( Figure 1 262) during the lift pin 102 is loaded with (e.g., supported by) a lift pin counterweight 104, which thereby applies a tensile load on the lift pin body 106. The lift pin body 106 can be formed from an opaque ceramic material 110, such as a material that is opaque to electromagnetic radiation in the infrared band, and can have a heat transfer coefficient substantially equal to that of the material forming the substrate support 224. Examples of suitable opaque materials include ceramic materials, such as silicon carbide, and carbon-containing materials, such as glassy carbon. In view of the present disclosure, those skilled in the art will appreciate that forming the lift pin body 106 from an opaque ceramic material can limit temperature variations on the substrate 2 and promote uniformity of the material layer 4. Advantageously, weighting the lift pin 102 with the lift pin counterweight 104 tends to (a) center the lift pin body 106 within the lift pin hole 262 so that the lift pin axis 108 remains parallel to the rotation axis 258 (e.g., Figure 2 ) and (b) facilitating placement of lift pins 102 within substrate support 224 (as shown in FIG. Figure 1 ), for example by opposing the horizontal force component exerted by the substrate 2 on the lift pin body 106 and / or by the lift pin actuator 230 (such as Figure 2 Increase the downward force on the lift pin body 106 during retraction (as shown).

[0053] The lift pin counterweight 104 is configured to be carried by the lift pin body 106 and in this regard defines a through hole 112. The through hole 112 extends through the lift pin counterweight 104, for example, at an upper surface 114 (eg, Fig.10 ) and the lower surface 116 (as shown Fig.10 ) and is sized to receive (a portion of) the lift pin body 106 therein. It is contemplated that the lift pin counterweight 104 is made of a transparent material 118 (such as Fig.10 18) is formed of a material that transmits electromagnetic radiation in the infrared band. Examples of suitable transmissive materials include ceramic materials, such as quartz and fused quartz as non-limiting examples. In view of this disclosure, those skilled in the art will also understand that forming the lift pin counterweight 104 from a transparent material 118 can limit the substrate support 224 ( Figure 1 The lower side of the shielding is provided by the lower heater element array 218 ( Figure 1 The electromagnetic radiation emitted by the substrate 2 (as shown) also limits temperature variations on the substrate 2 and also promotes the uniformity of the material layer 4.

[0054] In some examples of the present disclosure, the lift pin body 106 may extend axially between a first end 120 and an axially opposite second end 122 and may also have a stem segment 126, a neck segment 128, and a span feature 130. A contact pad 124 may be defined at the first end 120 of the lift pin body 106 and configured to hold the substrate 2 ( Figure 1 As shown) the substrate support 224 is arranged Figure 2 The rod segment 126 may extend axially from the contact pad 124 and may have a rod diameter 132 (as shown). Figure 7 ), and coupling the neck segment 128 and span feature 130 to the contact pad 124. The neck segment 128 may extend from the rod segment 126 and have a neck diameter 134 (eg, Figure 7 ), and coupling the span feature 130 to the stem segment 126 of the lift pin body 106. The span feature 130 may be defined at the second end 122 of the lift pin body 106, connected to the contact pad 124 via the neck segment 128 and the stem segment 126 of the lift pin body 106, and having a secondary width 138 (as shown). Fig. 9 ) and the main width 136 (as shown Fig. 9 The secondary width 138 of the span feature 130 may be substantially equal to the neck diameter 134 defined by the neck section 128 of the lift pin body 106 (eg, Figure 7 ), the major width 136 of the span feature 130 may be greater than the minor width 138 of the span feature 130, and the major width 136 of the span feature 130 may be further greater than the rod diameter 132 defined by the neck section 128 of the lift pin body 106 (as shown in FIG. Figure 7106) to suspend the lift pin counterweight 104 from the lift pin body 106. In some examples, the major width 136 can be offset from the minor width 138 by about 90 degrees about the lift pin axis 108, in which case the minor width 138 is substantially orthogonal to the major width 136. According to some examples, the major width 136 can intersect the minor width 138, such as at the intersection of the major width 136 and the minor width 138. It is also contemplated that the major width 136 can be axially offset from the minor width 138 and still be within the scope of the present invention.

[0055] like Figure 7-9 As shown, the span feature 130 can have a main lobe 140 and a secondary lobe 142. The main lobe 140 can be circumferentially offset from the secondary lobe 142, such as between about 90 degrees and about 270 degrees about the lift pin axis 108, and can be spanned by the main width 136 of the span feature 130. The main lobe 140 can further protrude laterally from the lift pin body 106, such as in a direction substantially orthogonal relative to the lift pin axis 108, and can have an axial height that is less than the axial height of the neck section 128 of the lift pin body 106. It is contemplated that the main lobe 140 protrudes laterally from the lift pin body 106, such as protruding a distance that is substantially greater than half of the neck diameter 134 defined by the neck section 128. It is also contemplated that the main lobe 140 can protrude laterally from the lift pin body 106 a distance that is substantially equal to about half of the stem diameter 132 defined by the stem section 126 of the lift pin body 106.

[0056] In certain examples, the main lobe 140 may be a first main lobe 140 and the span feature 130 may have one or more second main lobes 144. In such examples, the second main lobes 144 may be similar to the first main lobe 140, with the one or more second main lobes 144 additionally being circumferentially offset from the first main lobe 140 about the lift pin axis 108, and the one or more second main lobes 144 further being circumferentially offset from the secondary lobe 142 about the lift pin axis 108. In this regard, the one or more second main lobes 144 may be separated (e.g., circumferentially separated) from the first main lobe 140 by the secondary lobe 142. For example, the one or more second main lobes 144 may be circumferentially offset from the secondary lobe 142 about the lift pin axis 108, and the one or more second main lobes 144 may be circumferentially offset from the first main lobe 140 about the lift pin axis 108. Although shown and described herein as having two (2) main lobes, it should be understood and appreciated that the span feature 130 may have a single main lobe or more than two (2) main lobes and still be within the scope of the present disclosure.

[0057] The secondary lobe 142 can be circumferentially located intermediate the first main lobe 140 and the second main lobe 144, with the secondary lobe 142 offset about 90 degrees about the lift pin axis 108 from either (or both) of the first main lobe 140 and the one or more secondary lobes 146. The secondary lobe 142 can further protrude from the lift pin body 106, such as in a direction substantially orthogonal relative to the lift pin axis 108, and in this regard, it is contemplated that the secondary lobe 142 radially extends from the lift pin body 106 a radial distance that is less than the radial distance that the primary lobe 140 radially protrudes from the lift pin body 106. In another aspect, the secondary lobe 142 can radially protrude from the lift pin body 106 a radial distance that is less than about half of the neck diameter 134 defined by the neck section 128 of the lift pin body 106, can have an axial height that is greater than the axial height of the primary lobe 140 and less than the axial height of the neck section 128 of the lift pin body 106, and can be spanned by the secondary width 138 of the span feature 130.

[0058] In some examples, the secondary flap 142 may be a first primary flap 142, and the span feature 130 may have one or more second secondary flaps 146. The one or more second secondary flaps 146 may be similar to the first primary flap 142, additionally circumferentially offset from the first primary flap 142, and further circumferentially located between the first primary flap 140 and the second primary flap 144. For example, the one or more second primary flaps 144 may be circumferentially offset from either (or both) of the first primary flap 142 and / or the one or more second secondary flaps 146 by approximately 90 degrees about the lift pin axis 108. In this regard, the one or more second secondary flaps 146 may be separated (e.g., circumferentially separated) from the first primary flap 142 by the main flap 140. The one or more second secondary flaps 146 may further be circumferentially offset from the first primary flap 142 by approximately 180 degrees about the lift pin axis 108. Although shown and described herein as having two (2) secondary flaps, it should be understood and appreciated that the span feature 130 may have a single secondary flap or more than two (2) secondary flaps and still be within the scope of the present disclosure.

[0059] refer to Fig. 9, the span feature 130 can have (e.g., be defined by) a plurality of facets. In this regard, the span feature 130 can have (e.g., be defined by) a first planar facet 148 and one or more second planar facets 150. The secondary width 138 can intersect (e.g., extend between) the first planar facet 148 and the one or more second planar facets 150. The one or more second planar facets 150 can be offset from the first planar facet 148 by about 180 degrees about the lift pin axis 108. In another aspect, either (or both) of the first planar facet 148 and the one or more second planar facets 150 can be substantially orthogonal relative to the secondary width 138. In some examples, the span feature 130 can have (e.g., be defined by) one or more intermediate planar facets 152. The one or more intermediate planar facets 152 can be intermediate (e.g., offset from both) the secondary width 138 and the primary width 136, such as circumferentially offset from either (or both) the secondary width 138 and the primary width 136 about the lift pin axis 108. According to certain examples, one or more intermediate planar facets 152 can be between first planar facet 148 and one or more second planar facets 150 , in which regard, one or more intermediate planar facets 152 circumferentially separate first planar facet 148 from one or more second planar facets 150 .

[0060] In some examples, span feature 130 can have (e.g., be defined by) six (6) planar facets. In this regard, it is contemplated that one or more intermediate planar facets 152 can be a first intermediate planar facet 152, and span feature 130 can have (or be defined by) a second intermediate planar facet 154, a third intermediate planar facet 156, and a fourth intermediate planar facet 158, each intermediate between minor width 138 and major width 136 of span feature 130. Second intermediate planar facet 154 can be similar to first intermediate planar facet 152, additionally separated from first intermediate planar facet 152 by major width 136 and minor width 138, and further extending substantially parallel to first intermediate planar facet 152. Third intermediate planar facet 156 can also be similar to first intermediate planar facet 152, additionally separated from first intermediate planar facet 152 only by minor width 138, and further oblique to first intermediate planar facet 152 and second intermediate planar facet 154. The fourth intermediate planar facet 158 ​​can be spaced apart from the first intermediate planar facet 152 and the second planar facet 150 and extend substantially parallel to the third intermediate planar facet 156, whereby the plurality of facets impart a generally diamond shape to the spanning feature 130. Although shown and described herein as having six (6) planar facets, it should be understood and appreciated that the spanning feature 130 can have (or be defined by) fewer or additional planar facets and still be within the scope of the present disclosure.

[0061] In some examples, the span feature 130 can have (e.g., be defined by) a plurality of arcuate facets. In this regard, the span feature 130 can have (or be defined by) a first terminal arcuate facet 160 and one or more second terminal arcuate facets 162. The first arcuate facet 160a and the one or more second terminal arcuate facets 162 can be at laterally opposite ends of the major width 136. The one or more second terminal arcuate facets 162 can be offset from the first terminal arcuate facet 160 by about 180 degrees about the lift pin axis 108. The one or more second terminal arcuate facets 162 can also be separated from the first terminal arcuate facet 160 by the first planar facet 148 and the one or more second planar facets 150. It is also contemplated that the one or more second terminal arcuate facets 162 can be separated from the first terminal arcuate facet 160 by the minor width 138, and each intermediate planar facet 152-158 can separate the one or more second terminal arcuate facets 162 from the first terminal arcuate facet 160.

[0062] According to certain examples, the span feature 130 can have (or be defined by) a plurality of intermediate arcuate facets. In this regard, it is contemplated that the span feature 130 can have a first intermediate arcuate facet 164, a second intermediate arcuate facet 166, a third intermediate arcuate facet 168, and a fourth intermediate arcuate facet 170. The first intermediate arcuate facet 164 and the second intermediate arcuate facet 166 can be circumferentially located between the first terminal arcuate facet 160 and the second terminal arcuate facet 162, further separated from each other by the minor width 138, and on a common lateral side of the major width 140, such that two or more of the plurality of arcuate facets are defined between the major width 136 and the minor width 138 of the span feature 130. The third intermediate arcuate facet 168 and the fourth intermediate arcuate facet 170 can be similar to the first intermediate arcuate facet 164 and the second intermediate arcuate facet 166, and further separated therefrom by the major width 136. It is contemplated that the second intermediate arcuate facet 166 may be coupled to the first intermediate arcuate facet 164 via the first planar facet 148, the third intermediate arcuate facet 168 may be coupled to the fourth intermediate arcuate facet 170 via the second planar facet 150, the first terminal arcuate facet 160 may couple the first intermediate arcuate facet 164 to the third intermediate arcuate facet 168, and the second terminal arcuate facet 162 may couple the second intermediate arcuate facet 166 to the fourth intermediate arcuate facet 170. In view of this disclosure, one skilled in the art will appreciate that the plurality of arcuate facets may limit stresses within the material forming the span feature 130, enabling the lift pin body 106 to support a lift pin counterweight 104 having a greater weight (and associated tensile load) than would be possible given the neck diameter 134. Although shown and described herein as having eight (8) arcuate facets, it should be understood and appreciated that the spanning feature 130 may have (or be defined by) fewer or additional arcuate facets and still be within the scope of the present disclosure.

[0063] refer to Figure 10-13 , showing the lifting pin counterweight 104. The lifting pin counterweight 104 includes a counterweight body 172, the mass of which is selected to resist the first position 264 (such as Figure 2 ) and a second position 266 (as shown Figure 2 ) between, for example, due to the movement of the lifting pin 102 (as shown Figure 2 As shown) and / or lifting pin hole 262 (as shown) Figure 2108). In some examples, the counterweight body 172 can be formed of a transparent material 118, such as a material that transmits electromagnetic radiation in the infrared band, such as a ceramic material such as quartz or fused quartz. According to some examples, the counterweight body 172 can have a truncated cone shape. In this regard, it can be imagined that the counterweight body 172 has an upper surface 114 extending circumferentially around the lifting pin axis 108, a lower surface 116 extending circumferentially around the lifting pin axis 108 and axially deviating from the upper surface 114 along the lifting pin axis 108, and a side surface 180 that connects the lower surface 116 to the upper surface 114 and radially tapers between the lower surface 116 and the upper surface 114 of the counterweight body 172.

[0064] The lift pin counterweight 104 is registered to slidably receive the lift pin 102 therein (eg, Figure 2 172 to the lower surface 116 of the counterweight body 172, and connects the upper surface 114 to the lower surface 116, the upper surface 114 defining a generally annular shape extending around the generally circular aperture, and the lower surface 116 defining a generally cross-shaped aperture that is connected to the generally circular aperture through the through hole 112. It is contemplated that the lift pin counterweight 104 is further aligned to be carried by the lift pin 102, and in this regard defines a plurality of flanges 182 within the through hole 112, the through hole 112 having a first through hole section 186 and a second through hole section 188 separated by the plurality of flanges 182. The first through hole section 186 extends axially from the upper surface 114 of the counterweight body 172 to the plurality of flanges 182. The first through hole section 186 also defines a first section profile 190. The second through-bore segment 188 extends axially from the plurality of flanges 182 to the lower surface 116 of the counterweight body 172. The second through-bore segment 188 also defines a second segment profile 192 and is different in shape and width from the first segment profile 190. The second through-bore segment 188 is further axially separated from the first through-bore segment 186 by the plurality of flanges 182, which are located intermediate the first through-bore segment 186 and the second through-bore segment 188 within the interior of the counterweight body 172.

[0065] like Fig.11 As shown, the first through-hole segment 186 is generally circular, extends circumferentially around the lifting pin axis 108, and defines a first segment diameter 194. In some examples, the first segment diameter 194 can be larger than the neck segment 128 (e.g., Figure 7 The neck diameter 134 (as shown) Figure 7 According to some examples, the first section diameter 194 may be larger than the rod section 126 (eg, Figure 7 The rod diameter 132 (as shown) Figure 7 It is contemplated that, in some examples, the first segment diameter 194 may be larger than the span feature 130 ( Figure 6The secondary width 138 (shown) Fig. 9 shown) and main width 136 ( Fig. 9 ). It is also contemplated that, according to certain examples, the first segment diameter 194 may be substantially equal to the shank diameter 132 of the shank segment 126 of the lift pin body 106. In view of this disclosure, one skilled in the art will appreciate that when the first through-hole segment 186 of the through-hole 112 laterally overlaps the shank segment 126 of the lift pin body 106, this laterally secures the lift pin counterweight 104 relative to the lift pin body 106.

[0066] like Fig.12 As shown, the second through-hole section 188 of the through-hole 112 has a generally cross-shaped shape between the lower surface 116 of the counterweight body 172 and the plurality of flanges 182. The generally cross-shaped shape defines a second section major width 196 and a second section minor width 198, and the second section minor width 198 is generally orthogonal to the second section major width 196. It is contemplated that the second section major width 196 is greater than the second section minor width 198, and the second section minor width 198 is less than the span feature 130 ( Figure 6 The main width 136 (shown) Fig. 9 ), and the second segment major width 196 of the second through hole segment 188 is greater than the major width 136 of the span feature 130. In view of this disclosure, those skilled in the art will understand that when the main lobe 140 of the span feature 130 is aligned with the second segment major width 196 of the second through hole segment 188, this allows the span feature 130 to axially pass through the second through hole segment 188.

[0067] Continue to refer Fig.11 The flange section 184 has a first flange portion 101 and a second flange portion 103. The first flange portion 101 extends into the through hole 112 and faces the lifting pin axis 108, and has a first placement surface 105 (such as Fig.11 The first mounting surface 105 is configured to be mounted on the span feature 130 ( Figure 6 The first main lobe 140 (shown) Figure 6 102) so that when the first seating surface 105 abuts the first main lobe 140 of the span feature 130 of the lift pin body 106, the lift pin counterweight 104 is carried by the lift pin 102. The second flange portion 103 is similar to the first flange portion 101, is radially opposite to the first flange portion 101, and has a second seating surface 107 (as shown in FIG. Fig.1114. The second seating surface 107 is similar to the first seating surface 105 and is further configured to seat the counterweight body 172 on the second main lobe 144 of the span feature 130 when the second seating surface 107 abuts the upper surface of the second main lobe 144 of the span feature 130. In view of the present disclosure, those skilled in the art will understand that placing the second seating surface 107 against the upper surface of the second main lobe 144 enables the lift pin counterweight 104 to be carried by the lift pin 102 so that the center of gravity of the lift pin counterweight 104 is on the lift pin axis 108.

[0068] It is contemplated that the first flange portion 101 and the second flange portion 103 define a flange portion major width 109 and a flange portion minor width 111. The flange portion minor width 111 extends between the first flange portion 101 and the second flange portion 103 and is smaller than the span feature 130 (eg, Figure 6 The main width 136 (as shown) Fig. 9 ), and is substantially equal to (or greater than) the secondary width 138 of the span feature 130 (as shown in Figure 6 1 ). The flange portion major width 109 is orthogonal to the flange portion minor width 111, is greater than the flange portion minor width 111, is greater than the minor width 138 of the span feature 130, and is substantially equal to or greater than the major width 136 of the span feature 130. In view of this disclosure, one skilled in the art will appreciate that sizing the flange portion major width 109 to be substantially equal to the major width 136 of the span feature 130 allows the span feature 130 of the lift pin body 106 to axially pass through the flange section 184 of the through hole 112 when the lift pin counterweight 104 is aligned with the lift pin 102 in rotation about the lift pin axis 108, so that the major width 136 of the span feature 130 overlaps the flange portion major width 109. In view of the present disclosure, those skilled in the art will also understand that the secondary width 111 of the flange portion is sized to be smaller than the main width 136 of the span feature 130 so that the first flange portion 101 and the second flange portion 103 can be positioned over the span feature 130 of the lift pin body 106 so that the lift pin counterweight 104 is carried by the lift pin 102 when the lift pin counterweight 104 rotates, thereby allowing the secondary width 111 of the flange portion to cover the main width 136 of the span feature 130.

[0069] Reference Figure 13-16 , shows the assembly of the lift pin device 100. Fig.13 As shown, the lift pins 102 are first slidably received in the substrate support 224 (eg, Figure 2 ) in the lifting pin hole 262 (as shown) Figure 2 It is contemplated that the lift pin 102 is slidably received within the lift pin hole 262 such that the contact pad 124 is located within the upper surface of the substrate support 224 and the span feature 130 is suspended from the substrate support 224 within the lower chamber 252 of the chamber body 210 (as shown). Figure 2 In this regard, it is contemplated that the neck section 128 and at least a portion of the rod section 126 of the lift pin body 106 are axially located between the span feature 130 and the lower surface of the substrate support 224. The counterweight body 172 is then disposed within the lower chamber 252 of the chamber body 210 along the lift pin axis 108 such that the through hole 112 extends about the lift pin axis 108. The counterweight body 172 is then rotated about the lift pin axis 108 such that the flange portion main width 109 ( Fig.11 ) and the main width 136 ( Fig. 9 as shown) are registered and axially overlapped.

[0070] like Fig.14 As shown, the counterweight body 172 is then translated relative to the lift pin body 106 along the lift pin axis 108 toward the contact pad 124 of the lift pin body 106 such that the flange segment 184 of the through hole 112 defined in the counterweight body 172 is axially located between the span feature 130 and the rod segment 126 of the lift pin body 106. In this regard, it is contemplated that the flange segment 184 of the through hole 112 defined in the counterweight body 172, and more specifically, the first flange portion 101 and the second flange portion 103 of the counterweight body 172, laterally overlap the neck segment 128 of the lift pin body 106 along the lift pin axis 108.

[0071] like Fig.15 As shown, the counterweight body 172 is then rotated about the lifting pin axis 108, for example, about 90 degrees, so that the first flange portion 101 and the second flange portion 103 axially cover the first main lobe 140 and the second main lobe 144 of the span feature 130. Fig.16 As shown, the counterweight body 172 is thereafter translated along the lift pin axis 108 such that the first seating surface 105 and the second seating surface 107 abut the upper surfaces of the first main lobe 140 and the second main lobe 144 of the span feature 130 , respectively.

[0072] In view of this disclosure, those skilled in the art will appreciate that this secures the lift pin counterweight 104 of the lift pin 102 at the span feature 130 so that the lift pin 102 and the substrate support 224 ( Figure 2 ) carries the lift pin counterweight 104. In view of the present disclosure, those skilled in the art will also understand that the first seating surface 105 and the second seating surface 107 can be axially offset from the lower surface 116 of the counterweight body 172 by a distance that is substantially equal to the vertical height of the first main lobe 140 and the second main lobe 144, when the lift pin 102 is in the first position 264 (as shown). Figure 2 ) and a second position 266 (as shown Figure 2 Before moving between the lift pin actuator 230 (as shown), Figure 2During movement of the lift pin counterweight 104 (as shown), axial translation of the lift pin counterweight 104 relative to the lift pin 102 is limited (or completely prevented).

[0073] refer to Fig.17 , a method 300 of manufacturing a lift pin apparatus for a semiconductor processing system is shown, such as for use in a semiconductor processing system 200 (e.g. Figure 1 The lifting pin device 100 (as shown) Figure 1 The method 300 includes supporting a lift pin, such as the lift pin 102 (eg, lift pin 102), including a lift pin body in a lift pin hole extending through a substrate support. Figure 2 ) includes extending through the substrate support 224 (as shown Figure 2 The lifting pin hole 262 (as shown) Figure 2 ) within the lift pin body 106 (as shown) Figure 6 ), as shown in block 310. The method 300 also includes arranging a lift pin counterweight having a counterweight body, such as the lift pin counterweight 104 ( Figure 2 ) includes a lift pin axis 108 ( Figure 6 As shown) defines a through hole 112 ( Fig.10 The counterweight body 172 (shown) Fig.10 ), as shown in block 320. The method 300 also includes rotating the counterweight body about the lift pin axis so that the flange portion major width defined within the through hole of the counterweight body is aligned with the major width of the span feature of the lift pin body, such as the flange portion major width 109 ( Fig.11 ) and span feature 130 ( Figure 6 The main width 136 (shown) Figure 6 As shown) is aligned, and the counterweight body is translated along the lift pin axis so that the span feature of the lift pin body is axially located between the contact pad of the lift pin body and the span feature of the lift pin body, such as the contact pad 124 (as shown) Figure 6 ), as shown in box 330 and box 340.

[0074] The counterweight body is then rotated about the lift pin axis so that the first flange portion and the second flange portion of the counterweight body axially cover the main width of the span feature of the lift pin body, such as the first flange portion 101 (eg, Fig.11 as shown) and the second flange portion 103 (as shown Fig.11The lift pin assembly is configured to cover a major width of a span feature of the lift pin body, and the counterweight body is translated along the lift pin axis in a direction opposite to the contact pad axial direction of the lift pin body such that the first flange portion and the second flange portion of the counterweight body abut the span feature of the lift pin body, as shown in blocks 350 and 360. It is contemplated that the abutment of the first flange portion and the second flange portion on the span feature causes the lift pin body to exert a downward force on the lift pin during sliding of the lift pin through the substrate support, such as during placement and removal of substrates within a chamber arrangement of a semiconductor processing system, during movement of the lift pin through the substrate support between a first position and a second position. It is also contemplated that the lift pin assembly can be one of three (3) lift pin assemblies included in a semiconductor processing system, as shown by arrow 380.

[0075] Semiconductor processing systems, such as those that deposit material layers using chemical vapor deposition techniques (e.g., epitaxy and atomic layer deposition techniques), typically require that a substrate be positioned on a substrate support prior to deposition of the material layer and then removed from the substrate support after deposition of the material layer. Positioning and removing the substrate from the substrate support may be accomplished using lift pins that may move between a retracted position and an extended position relative to the substrate support, or that may position and remove the substrate from the substrate support, or that may be recessed or protruded from the substrate support as the substrate support is driven between a processing position and a load / unload position. As described above, during some deposition processes, the lift pins may become bound within the substrate support, such as when the lift pins are tilted within the lift pin holes and / or when material accumulates on the lift pins and / or within the lift pin holes that receive the lift pins, which may interrupt operation of the semiconductor processing system.

[0076] In the examples described herein, a lift pin arrangement is provided that includes a lift pin and a lift pin counterweight supported by the lift pin. Advantageously, the lift pin counterweight establishes a center of gravity of the lift pin arrangement that is lower than the center of gravity of the lift pin, increasing the magnitude of the horizontal force component required to tilt the lift pin, thereby limiting the tendency of the lift pin to bind within the lift pin hole due to the tilt. More advantageously, the lift pin counterweight increases the downward force on the lift pin, increasing the resistance that accumulated material needs to exert on the lift pin to bind the lift pin within the lift pin hole, limiting the tendency that such material accumulation may have to cause the lift pin to bind within the lift pin hole.

[0077] In the examples described herein, a lift pin has a lift pin body including a contact pad and opposing span features separated by a neck segment, a lift pin counterweight having a through hole, and the lift pin counterweight is attached to the lift pin by receiving the lift pin within the through hole and positioning the lift pin counterweight on the span feature. The lift pin counterweight can be rotationally fixed about the lift pin, or by the geometry defined by the span feature and / or within a through hole extending through the lift pin counterweight, and by the engagement of a retainer received around the lift pin. In view of the present disclosure, those skilled in the art will appreciate that this can simplify assembly of the lift pin assembly, such as by avoiding the need for fasteners and / or the use of tools to assemble the lift pin device, as well as provide the above-mentioned advantages regarding lift pin reliability during operation of a semiconductor processing system using the lift pin device.

[0078] The illustrations presented herein are not meant to be actual views of any particular material, structure or device, but are merely idealized representations for describing embodiments of the present disclosure. The specific embodiments shown and described are illustrations of the present invention and its best mode, and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacture, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0079] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0080] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

Claims

1. A lifting pin, comprising: A lift pin body arranged along a lift pin axis, the lift pin body having: a contact pad defined at a first end of the lift pin body; a rod segment extending from the contact pad; a neck segment extending from the stem segment; as well as a span feature defined at the second end of the lift pin body and connected to the contact pad via a neck segment and a stem segment of the lift pin body, wherein the span feature has a minor width and a major width, the minor width being substantially equal to a neck diameter defined by the neck section of the lift pin body, and the major width being greater than the minor width, the major width being greater than a rod diameter defined by the neck section of the lift pin body.

2. The lifting pin according to claim 1, wherein: The lift pin body is formed of a ceramic material.

3. The lifting pin according to claim 1, wherein: The secondary width is offset from the primary width by approximately 90 degrees about the lift pin axis.

4. The lifting pin according to claim 1, wherein: The span feature has a main lobe and a secondary lobe, the main width spans the main lobe, and the secondary width spans the secondary lobe.

5. The lifting pin according to claim 4, wherein: The main lobe is a first main lobe, and the span feature has a second main lobe separated from the first main lobe by the secondary lobe.

6. The lifting pin according to claim 5, wherein: The second main lobe is offset from the first main lobe by approximately 180 degrees.

7. The lift pin according to claim 4, wherein: The secondary lobe is a first primary lobe, and the span feature has a second secondary lobe, wherein the second secondary lobe is separated from the first primary lobe by the primary lobe.

8. The lift pin according to claim 7, wherein: The second secondary lobe is offset from the first primary lobe by approximately 180 degrees.

9. The lift pin according to claim 1, wherein: The span feature has a first planar facet and a second planar facet, and wherein the secondary width intersects both the first planar facet and the second planar facet.

10. The lift pin according to claim 9, wherein: The span feature has two or more arcuate facets defined between the major and minor widths.

11. The lift pin according to claim 10, wherein: The span feature has an intermediate planar facet offset from the major and minor widths.

12. The lift pin of claim 9, wherein: The first and second planar facets are two of at least six planar facets defined by the span feature, wherein the span feature has at least eight arcuate facets.

13. A lifting pin device comprising: The lifting pin as claimed in claim 1; a lift pin counterweight comprising a counterweight body having a through hole extending therethrough, the through hole having a flange section; and wherein the lift pin counterweight is carried by the span feature of the lift pin body through the first and second flange portions of the flange section of the through hole and extends radially toward a lift pin axis defined by the lift pin body of the lift pin.

14. The lift pin device of claim 13, wherein: The through hole has a first through hole section and a second through hole section separated by a plurality of flanges, the first through hole section coupling the upper surface of the counterweight body to the plurality of flanges, and the second through hole section coupling the plurality of flanges to the lower surface of the counterweight body.

15. The lift pin device of claim 14, wherein: The first through-hole section has a generally circular shape between an upper surface of the counterweight body and a plurality of flanges within the through-hole, and wherein the second through-hole section has a generally cross shape extending between a lower surface of the counterweight body and a plurality of flanges within the through-hole.

16. The lift pin device of claim 14, wherein: The diameter of the first through hole segment is substantially equal to the width of the rod segment of the lift pin body, wherein the second segment major width of the second through hole segment is greater than the major width of the span feature of the lift pin body, and wherein the second segment minor width of the second through hole segment is less than the major width of the span feature of the lift pin body.

17. The lift pin device of claim 14, wherein: The lift pin counterweight has a frustoconical shape, wherein the diameter of the first through hole section is substantially equal to the width of the shaft section of the lift pin body, and wherein the second section major width of the second through hole section is substantially equal to the major width of the span feature of the lift pin body.

18. A semiconductor processing system comprising: a chamber body formed of a quartz material; a substrate support disposed within the interior of the chamber body and configured to support a substrate during deposition of a material layer onto the substrate; The lift pin of claim 1 slidably received in a lift pin hole extending through the substrate support; and A lift pin counterweight has a through hole extending therethrough, the rod section and a portion of the span feature are disposed within the through hole of the lift pin counterweight, and the lift pin counterweight is carried by the lift pin through the span feature and the neck section of the lift pin.

19. The semiconductor processing system of claim 18, wherein: The lift pin body is formed of silicon carbide, and wherein the weight body of the lift pin counterweight is formed of quartz.

20. A method of manufacturing a lift pin apparatus for a semiconductor processing system, the method comprising: At the lift pin, the lift pin includes a lift pin body arranged along a lift pin axis, the lift pin body having a contact pad defined at a first end of the lift pin body, a stem segment extending from the contact pad, a neck segment extending from the stem segment, and a span feature defined at a second end of the lift pin body and connected to the contact pad by the neck segment and the stem segment of the lift pin body, the span feature having a minor width and a major width, the minor width being substantially equal to a neck diameter defined by the neck segment of the lift pin body, and the major width being greater than the minor width, the major width being greater than the stem diameter defined by the neck segment of the lift pin body, disposing a lift pin counterweight having a counterweight body defining a through hole therethrough along the lift pin axis; rotating the counterweight body about the lift pin axis so that the flange portion major width is aligned with the major width of the span feature of the lift pin body; translating the counterweight along the lift pin axis so that the span feature is axially located between the contact pad of the lift pin body and the span feature of the lift pin body; rotating the counterweight body about the lift pin axis so that the first flange portion and the second flange portion of the counterweight body cover a major width of the span feature of the lift pin body; as well as translating the counterweight body along the lift pin axis in a direction opposite the contact pad so that the first flange portion and the second flange portion of the counterweight body abut the span feature of the lift pin body, The lift pin counterweight is thereby carried by the span feature of the lift pin body to exert a downward force on the lift pin during movement of the lift pin through the substrate support within a chamber arrangement of a semiconductor processing system.

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