Connection assembly and preparation method thereof, interconnection assembly and preparation method thereof, and electronic equipment

Abstract

The embodiment of the invention provides a connection assembly and a preparation method thereof, an interconnection assembly and a preparation method thereof, and electronic equipment, relates to the field of mechanical structures, and is used for improving the performance of the connection assembly. The connecting assembly comprises a first to-be-connected piece and a first connecting film arranged on the first to-be-connected piece. The first connection film includes a metal layer and a plurality of holes in the metal layer. And the distribution density of the multiple holes is gradually increased in the direction from the first to-be-connected piece to the first connecting film.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a connection component and a preparation method, an interconnection component and a preparation method, and an electronic device. Background Art

[0002] With the development of semiconductor process and packaging technology, the performance of various devices such as lasers and transistors has also been rapidly improved. In the process of producing and packaging the above devices, interconnection between devices is a common process.

[0003] However, as device performance improves, it also brings problems such as increased power consumption and heat dissipation. In particular, when at least two devices are connected to form an interconnection component, the connection layer between the connecting devices has poor performance, which affects the performance of the interconnection component. Summary of the invention

[0004] Embodiments of the present application provide a connection component and a preparation method, an interconnection component and a preparation method, and an electronic device, which are used to improve the performance of the connection component.

[0005] In order to achieve the above objectives, this application adopts the following technical solutions:

[0006] In a first aspect of an embodiment of the present application, a connection assembly is provided, comprising: a first member to be connected and a first connection film disposed on the first member to be connected. The first connection film comprises a metal layer and a plurality of holes in the metal layer. Along the direction from the first member to be connected to the first connection film, the distribution density of the plurality of holes gradually increases.

[0007] In the connection assembly provided by the embodiment of the present application, the distribution density of the plurality of holes gradually increases along the direction from the first to-be-connected member to the first connection film. The first connection film is loose and compressible, so that bonding can be achieved under relatively low pressure. Since there are many holes on the surface of the first connection film, it has a relatively high surface energy, and thus the surface has low-temperature sintering properties when bonding is achieved.

[0008] In a possible implementation, the radial dimension of any hole is between 1 nm and 300 nm. Thus, the hole size in the first connection film is relatively small.

[0009] In a possible implementation, the thickness of the first connection film is between 0.01 μm and 10 μm. In this way, since the thickness of the first connection film is relatively small, lower thermal resistance can be achieved.

[0010] In a possible implementation, the material of the metal layer includes one or more of gold, silver or copper. In this way, the thermal conductivity of the first component to be connected can be improved.

[0011] In a possible implementation, the material of the first member to be connected includes one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum or iron. Thus, the first member to be connected has multiple implementations.

[0012] In a possible implementation, along the direction from the first to-be-connected member to the first connection film, the first connection film includes a first section, a second section, and a third section arranged in sequence; a plurality of holes are distributed in the second section and the third section; the volume proportion of the holes in the second section is between 5% and 50%, and the volume proportion of the holes in the third section is between 50% and 95%. In this way, along the direction from the first to-be-connected member to the first connection film, the distribution density of the holes in the first connection film gradually increases.

[0013] In a possible implementation, the ratio of the thickness of the first interval to the thickness of the first connecting film is between 10% and 40%, the ratio of the thickness of the second interval to the thickness of the first connecting film is between 40% and 60%, and the ratio of the thickness of the third interval to the thickness of the first connecting film is between 10% and 30%. In this way, the holes included in the first connecting film have multiple distribution modes.

[0014] In a possible implementation, the interconnection assembly further includes a first dielectric layer, which is disposed between the first component to be connected and the first connection film, so as to improve the connection strength between the first component to be connected and the first connection film.

[0015] In a possible implementation, the material of the first dielectric layer includes gold, silver or copper. In this way, since the material of the first dielectric layer has good thermal conductivity, the thermal conductivity between the first to-be-connected member and the first connecting film can be improved.

[0016] In a possible implementation, the thickness of the first dielectric layer is between 0.01 μm and 10 μm. In this way, since the thickness of the first dielectric layer is relatively small, lower thermal resistance can be achieved.

[0017] In a possible implementation, the interconnection assembly further includes a second dielectric layer; the second dielectric layer is located on a side of the first dielectric layer away from the first connection film. In this way, the connection strength between the first component to be connected and the first connection film can be further improved.

[0018] In a possible implementation, the material of the first dielectric layer is different from the material of the second dielectric layer. In this way, the connection strength between the first component to be connected and the first connection film can be further improved.

[0019] In a possible implementation, the material of the second dielectric layer includes titanium, molybdenum, chromium or tungsten. In this way, since the material of the second dielectric layer has good thermal conductivity, the thermal conductivity between the first to-be-connected member and the first connecting film can be further improved.

[0020] In a possible implementation, the thickness of the second dielectric layer is between 10 nm and 200 nm. In this way, since the thickness of the second dielectric layer is small, lower thermal resistance can be achieved.

[0021] According to a second aspect of an embodiment of the present application, a method for preparing a connecting component is provided, comprising: forming a first metal layer on a first part to be connected; forming a second metal layer and a plurality of sacrificial particles on a side of the first metal layer away from the first part to be connected; the sacrificial particles are located in the second metal layer, and the distribution density of the sacrificial particles gradually increases along the direction from the first metal layer to the second metal layer; and removing a plurality of sacrificial particles to form a plurality of holes to form a first connecting film.

[0022] In the method for preparing the connection assembly provided in the embodiment of the present application, the distribution density of the sacrificial particles gradually increases along the direction from the first part to be connected to the first metal layer. After the sacrificial particles are removed to form holes, the distribution density of the holes gradually increases along the direction from the first part to be connected to the first metal layer. The first connection film of the connection assembly prepared in the embodiment of the present application has the characteristics of being loose and compressible, so that bonding can be achieved under relatively low pressure. Since there are many holes on the surface of the first connection film, it has a relatively high surface energy, so that the surface has low-temperature sintering properties when bonding is achieved.

[0023] In a possible implementation, forming a second metal layer and a plurality of sacrificial particles on a side of the first metal layer away from the first to-be-connected member includes: forming the second metal layer and the sacrificial particles on the first metal layer in the same process step, wherein the rate of forming the second metal layer remains unchanged and the rate of forming the sacrificial particles gradually increases. In this way, the number of sacrificial particles formed in the same time period gradually increases, so that the distribution density of the sacrificial particles increases with the increase of deposition time.

[0024] In a possible implementation, the material of the sacrificial particles includes sodium chloride, so that it is easy to remove the sacrificial particles to form holes in the second metal layer.

[0025] In a possible implementation, the process of forming the second metal layer and the sacrificial particles includes any one of a physical vapor deposition process, a chemical vapor deposition process, a magnetron sputtering process or an atomic layer deposition process. In this way, the second metal layer can be more closely bonded to the first metal layer, thereby improving the connection strength.

[0026] In a third aspect of the embodiments of the present application, an interconnection assembly is provided, comprising a first member to be connected, a second member to be connected, and a connection layer for connecting the first member to be connected and the second member to be connected. The connection layer comprises a metal layer and a plurality of holes in the metal layer. In the direction from the first member to be connected to the second member to be connected, the distribution density of the holes increases first and then decreases.

[0027] In the interconnection assembly provided in the embodiment of the present application, the connection layer has more holes distributed near the middle area, and the holes gradually decrease toward the first to-be-connected member and the second to-be-connected member, so that the connection layer gradually changes from dense to non-dense and then to dense distribution. In this way, the connectivity of the first to-be-connected member and the second to-be-connected member can be improved, and the heat transfer between the first to-be-connected member and the second to-be-connected member can be improved, which is beneficial to heat dissipation.

[0028] In addition, since the surface of the connection layer has many holes and a higher surface energy, the surfaces where the first member to be connected and the second member to be connected are bonded to the connection layer have low-temperature sintering properties.

[0029] In addition, the first part to be connected and the second part to be connected are connected only by metal material without any other materials, thus avoiding the residue of other materials and having better vacuum service stability.

[0030] In a possible implementation, along the direction from the first to-be-connected member to the second to-be-connected member, the connection layer includes a fourth section, a fifth section, and a sixth section arranged in sequence; a plurality of holes are distributed in the fifth section, and the volume proportion of the holes in the fifth section is between 5% and 95%. In this way, more holes are distributed in the middle of the connection layer formed after the connection film is bonded, and there are almost no holes on both sides.

[0031] In a possible implementation, the ratio of the thickness of the fourth interval to the thickness of the connection layer is between 20% and 40%; the ratio of the thickness of the fifth interval to the thickness of the connection layer is between 30% and 50%; the ratio of the thickness of the sixth interval to the thickness of the connection layer is between 20% and 40%. In this way, the holes included in the connection layer have multiple distribution modes.

[0032] In a possible implementation, the thickness of the connection layer is less than 5 μm. In this way, due to the smaller thickness of the connection layer, lower thermal resistance can be achieved.

[0033] In a possible implementation, the first component to be connected includes a chip, and the second component to be connected includes a printed circuit board. In this way, there are multiple implementations of the first component to be connected and the second component to be connected.

[0034] In a possible implementation, the interconnection assembly further includes a first dielectric layer, which is disposed between the first component to be connected and the first connection film, so that the connection strength between the component to be connected and the connection layer can be improved.

[0035] In a possible implementation, the interconnection assembly further includes a first dielectric layer, which is disposed between the second component to be connected and the second connection film, so as to improve the connection strength between the component to be connected and the connection layer.

[0036] In a possible implementation, the interconnection assembly further includes a second dielectric layer; the second dielectric layer is located on a side of the first dielectric layer away from the connection layer, so that the connection strength between the components to be connected and the connection layer can be improved.

[0037] According to a fourth aspect of an embodiment of the present application, a method for preparing an interconnection component is provided, comprising: providing a connection component as any one of the first aspects as a first connection component and a second connection component; the first connection component comprises a first member to be connected and a first connection film, the first connection film having a first surface away from the first member to be connected; the second connection component comprises a second member to be connected and a second connection film, the second connection film having a second surface away from the second member to be connected; bonding the first surface to the second surface to form a connection layer; the connection layer is located between the first member to be connected and the second member to be connected; the connection layer comprises a metal layer and a plurality of holes, the plurality of holes being located in the metal layer; along the direction from the first member to be connected to the second member to be connected, the distribution density of the holes first increases and then decreases.

[0038] The preparation method of the interconnection component provided in the embodiment of the present application sequentially deposits metal film layers on the surfaces of the first part to be connected and the second part to be connected, and is not limited to the surface of the first part to be connected or the second part to be connected, and is applicable to the surfaces of various parts to be connected. Since the hole distribution density of the first connecting film and the second connecting film is gradually increased, the holes in the connecting layer formed by connecting the first connecting film and the second connecting film are also changed. There are more holes distributed near the middle area of ​​the connecting layer, and they gradually decrease in the direction of the first part to be connected and the second part to be connected. That is, in the direction from the first device to the second part to be connected, the density of the connecting layer first decreases and then increases, realizing a distribution from dense to non-dense, and then to dense. In this way, the connecting layer can improve the connectivity of the first part to be connected and the second part to be connected, and can improve the heat transfer between the first part to be connected and the second part to be connected, which is conducive to heat dissipation.

[0039] In addition, since the hole distribution density of the first connection film gradually increases along the direction from the first to-be-connected part to the first connection film, and the hole distribution density of the second connection film gradually increases along the direction from the second to-be-connected part to the second connection film, this structure with more holes has the characteristics of being loose and compressible, so that the first connection film and the second connection film can be connected at a lower pressure to form a connection layer. Since there are more holes on the surface of the first connection film and the second connection film, they have higher surface energy, so the surface where the first connection film and the second connection film are attached to each other has low-temperature sintering properties.

[0040] Since the thickness of the connection layer is small, lower thermal resistance can be achieved. In addition, during the connection process of the first part to be connected and the second part to be connected, only metal materials are connected without adding other materials, thus avoiding the residue of other materials and having better vacuum service stability.

[0041] In a possible implementation, bonding the first surface to the second surface includes: laminating the first surface to the second surface to pre-bond the first surface to the second surface; bonding the first connection film to the second connection film to form a connection layer. In this way, the connection layer can be better bonded to achieve connection between the first to-be-connected component and the second to-be-connected component.

[0042] According to a fifth aspect of the embodiments of the present application, an electronic device is provided, comprising the interconnection component and a housing according to any one of the third aspects; the interconnection component is disposed in the housing.

[0043] The electronic device provided in the fifth aspect of the embodiment of the present application includes the interconnection component of any one of the third aspects, and its beneficial effects are the same as the beneficial effects of the interconnection component, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1A A schematic diagram of the structure of an electronic device provided in an embodiment of the present application;

[0045] Figure 1B A schematic diagram of a chip package structure provided in an embodiment of the present application;

[0046] Figure 2 A schematic diagram of the structure of an interconnection component provided in an embodiment of the present application;

[0047] Figure 3 A schematic diagram of the structure of another interconnection component provided in an embodiment of the present application;

[0048] Figure 4 A schematic diagram of the structure of a connection component provided in an embodiment of the present application;

[0049] Figure 5A schematic diagram of a process for preparing a connection assembly provided in an embodiment of the present application;

[0050] Figure 6A-6F A schematic diagram of a process of preparing a connection assembly provided in an embodiment of the present application;

[0051] Figure 7 A schematic diagram of the structure of another connection component provided in an embodiment of the present application;

[0052] Figure 8 A schematic diagram of the structure of a connecting membrane provided in an embodiment of the present application;

[0053] Fig. 9 A schematic diagram of the structure of another connection assembly provided in an embodiment of the present application;

[0054] Fig.10 A schematic diagram of a process for preparing an interconnection component provided in an embodiment of the present application;

[0055] Figure 11A-11C A schematic diagram of a process of preparing an interconnection component provided in an embodiment of the present application;

[0056] Fig.12 A schematic diagram of the structure of another interconnection component provided in an embodiment of the present application;

[0057] Fig.13 A microscope scan of an interconnection component provided in an embodiment of the present application.

[0058] Reference numerals

[0059] 1-electronic device; 2-display module; 3-middle frame; 4-housing; 5-cover plate; 11-packaging board; 12-chip; 10-interconnection component; 20-connection component; 22-first connection component; 22-second connection component; 100-connection film; 110-first connection film; 120-second connection film; 130-connection layer; 210-first part to be connected; 220-second part to be connected; 310-first dielectric layer; 320-second dielectric layer; 131-metal layer; 101-first metal layer; 102-second metal layer; 103-sacrificial particles; 104-holes. DETAILED DESCRIPTION

[0060] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0061] In the following, the terms "second", "first", etc. are used only for convenience of description and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "second", "first", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0062] In addition, in the embodiments of the present application, directional terms such as "up", "down", "left" and "right" may be defined including but not limited to the orientation relative to the schematic placement of the components in the drawings. It should be understood that these directional terms may be relative concepts, which are used for relative description and clarification, and may change accordingly according to changes in the orientation of the components in the drawings.

[0063] In the embodiments of the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. In addition, the term "coupled" can be a direct electrical connection or an indirect electrical connection through an intermediate medium. The term "contact" can be a direct contact or an indirect contact through an intermediate medium.

[0064] In the embodiments of the present application, "and / or" describes the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B may be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0065] The embodiment of the present application provides an electronic device. In some embodiments, the electronic device may be, for example, a consumer electronic product, a home electronic product, a vehicle-mounted electronic product, or a financial terminal product. Among them, consumer electronic products are such as mobile phones, tablet computers (pad), laptop computers, e-readers, personal computers (PC), personal digital assistants (PDA), desktop displays, smart wearable products (e.g., smart watches, smart bracelets), virtual reality (VR) terminal devices, augmented reality (AR) terminal devices, drones, etc. Home electronic products are such as smart door locks, televisions, remote controls, refrigerators, rechargeable small household appliances (e.g., soybean milk machines, sweeping robots), etc. Vehicle-mounted electronic products are such as vehicle-mounted navigation systems, vehicle-mounted DVDs, etc. Financial terminal products are such as ATM machines, self-service terminals, etc. The embodiment of the present application does not impose any special restrictions on the specific forms of the above-mentioned electronic devices.

[0066] In other embodiments, the electronic device may be an optical device such as an optical module or an optical component.

[0067] In some other embodiments, the electronic device may also be a laser, a radio frequency module, or a microelectro mechanical system (MEMS).

[0068] The embodiments of the present application do not impose any special restrictions on the specific form of the electronic device. For the convenience of description, the following embodiments are all illustrated by taking the electronic device as a mobile phone.

[0069] For example, Figure 1A As shown, the electronic device 1 mainly includes a display module 2, a middle frame 3, a housing (or battery cover, rear housing) 4 and a cover plate 5.

[0070] The display module 2 has a light emitting side through which a display image can be seen and a back side arranged opposite to the light emitting side. The back side of the display module 2 is close to the middle frame 3 , and the cover plate 5 is arranged on the light emitting side of the display module 2 .

[0071] The display module 2 includes a display panel (DP).

[0072] In a possible embodiment of the present application, the display module 2 is a liquid crystal display module. In this case, the display screen is a liquid crystal display (LCD). Based on this, the display module 2 also includes a backlight unit (BLU) located on the back of the liquid crystal display (away from the side of the LCD for displaying images).

[0073] The backlight module can provide light source to the liquid crystal display screen, so that each subpixel in the liquid crystal display screen can emit light to realize image display.

[0074] The backlight module can provide light (also called backlight) to the liquid crystal display screen, and each sub-pixel in the liquid crystal display screen can control the transmittance of light to realize image display.

[0075] Alternatively, in another possible embodiment of the present application, the display module 2 is an organic light emitting diode display module. In this case, the display screen is an organic light emitting diode (OLED) display screen. Since an electroluminescent layer is provided in each sub-pixel of the OLED display screen, the OLED display screen can be self-luminous after receiving the operating voltage. In this case, the display module 2 having the OLED display screen does not need to be provided with the backlight module.

[0076] The cover plate 5 is located at a side of the display module 2 away from the middle frame 3 . The cover plate 5 may be, for example, a cover glass (CG), and the cover glass may have a certain toughness.

[0077] The middle frame 3 is located between the display module 2 and the housing 4. The surface of the middle frame 3 away from the display module 2 is used to install internal components such as batteries, printed circuit boards (PCB), cameras, antennas, etc. After the housing 4 and the middle frame 3 are covered, the above internal components are located between the housing 4 and the middle frame 3.

[0078] In some embodiments, the electronic device 1 further comprises a chip disposed on a printed circuit board. The printed circuit board is used to carry the chip and complete signal interaction with the chip.

[0079] For example, Figure 1B As shown, the chip 12 having the functional circuit is electrically connected to the printed circuit board.

[0080] For example, the chip 12 may be a bare chip or a packaged chip, which is not limited in the present application embodiment and may be reasonably configured according to actual conditions.

[0081] For example, at least one transistor is integrated on the chip 12 , and the transistor here may be, for example, a field effect transistor (FET).

[0082] It is explained here that the field effect transistor may include a planar transistor such as an insulated gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), or a junction field-effect transistor (JFET), and may also include a three-dimensional transistor such as a fin field-effect transistor (FinFET), a gate all around field effect transistor (GAAFET), or a forksheet field effect transistor (forksheet FET or FSFET). The embodiments of the present application are not limited to this.

[0083] like Figure 1B As shown, the package board 11 and the chip 12 , as well as the package board 11 and the PCB are connected via a connection layer 130 .

[0084] Exemplarily, when the electronic device may be an optical module, for example, the optical device (eg, a reflector) and the bracket need to be connected via a connecting layer 130 .

[0085] For the sake of convenience, the following is illustrated with interconnected components.

[0086] For example, Figure 2 As shown, the interconnection assembly 10 includes a first component to be connected 210 , a second component to be connected 220 , and a connection layer 130 .

[0087] For example, the first part to be connected 210 may be a chip 12, and the second part to be connected 220 may be a package board 11. Alternatively, the first part to be connected 210 may be a package board 11, and the second part to be connected 220 may be a PCB. Alternatively, the first part to be connected 210 may be an optical device, and the second part to be connected 220 may be a bracket. The present application embodiment does not limit this, as long as the structure can have a certain degree of weldability with the metal film after simple surface treatment or metallization. The following description will be given by taking the first part to be connected 210 as a chip and the second part to be connected 220 as a printed circuit board as an example.

[0088] An interconnection assembly 10 is shown. Figure 2 As shown, the first to-be-connected member 210 and the second to-be-connected member 220 are connected via the connection layer 130. For example, solder is filled between the first to-be-connected member 210 and the second to-be-connected member 220, and the solder is heated and condensed to form a solder layer (connection layer 130).

[0089] However, after the solder is heated, due to factors such as wetting or reflow, holes are present in the connection layer 130. The presence of holes makes the first part 210 to be connected and the second part 220 to be connected not tightly connected, the connection strength is low, and the degassing rate of the connection layer 130 is large. The first part 210 to be connected and the second part 220 to be connected are not easy to use in a vacuum system and are limited in use. The uneven holes also increase the thermal resistance of the connection layer 130, reduce the heat dissipation performance of the first part 210 to be connected and the second part 220 to be connected, and affect the service life of the first part 210 to be connected and the second part 220 to be connected. In addition, when the contact area between the first part 210 to be connected and the second part 220 to be connected is large, the proportion of holes in the connection layer 130 is significantly increased, further exacerbating the aforementioned effects and affecting the reliability of the interconnection assembly 10.

[0090] Based on this, in order to improve the reliability of the interconnection component, the embodiment of the present application also provides an interconnection component. Figure 3 As shown, the interconnection assembly 10 includes a first member to be connected 210, a second member to be connected 220, and a connection layer 130 for connecting the first member to be connected 210 and the second member to be connected 220. The connection layer 130 includes a metal layer 131 and a plurality of holes 104 located in the metal layer 131. In the direction from the first member to be connected 210 to the second member to be connected 220, the distribution density of the holes 104 increases first and then decreases.

[0091] It is explained here that the distribution density of the holes 104 can be considered as the volume of the holes 104 relative to the metal layer 131. The change in the distribution density of the holes 104 can be a regular change or an irregular change. The embodiment of the present application does not limit this, and it is only necessary to ensure that the distribution density of the holes 104 increases first and then decreases.

[0092] The embodiment of the present application does not limit the shape of the hole 104. For example, the hole 104 can be a single circle, or can also be a plurality of connected circles.

[0093] That is to say, Figure 3 As shown, the first member to be connected 210 and the second member to be connected 220 are respectively disposed on two opposite surfaces of the connection layer 130 .

[0094] For example, the connection layer 130 has a first surface and a second surface opposite to each other. The first to-be-connected member 210 is disposed on the first surface of the connection layer 130 , and the second to-be-connected member 220 is disposed on the second surface of the connection layer 130 .

[0095] The present application also provides a connection component. The interconnection component 10 can be formed by bonding two connection components (a first connection component and a second connection component). Figure 4 As shown, the connection assembly 20 includes a first member to be connected 210 and a first connection film 110 disposed on the first member to be connected 210. The first connection film 110 includes a metal layer 131 and a plurality of holes 104 located in the metal layer 131. Along the direction from the first member to be connected 210 to the first connection film 110, the distribution density of the plurality of holes 104 gradually increases.

[0096] It is explained here that the increase of the distribution density of the holes 104 can be regular or irregular. The embodiment of the present application does not limit this, and it is only necessary to ensure that the distribution density of the holes 104 is increasing.

[0097] like Figure 5 As shown, an embodiment of the present application provides a method for preparing a connection assembly, comprising:

[0098] S11, such as Fig. 6A As shown, a first component 210 to be connected is provided.

[0099] Exemplarily, the material of the first member to be connected 210 includes one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum or iron. The embodiment of the present application does not limit the specific structure of the first member to be connected 210. For example, the first member to be connected 210 can be a semiconductor structure such as a chip, a packaging board or an optical device. Alternatively, the first member to be connected 210 can also be a semiconductor film layer such as a metal film layer or a dielectric layer.

[0100] Exemplarily, the first member to be connected 210 includes, but is not limited to, a structure that can have a certain degree of weldability with a metal film after simple surface treatment or metallization.

[0101] In some implementations, the surface of the first member to be connected 210 may be pre-treated before performing subsequent steps.

[0102] The following illustrates a method for pre-treating the surface of the first member to be connected 210. The embodiment of the present application does not limit the method for pre-treating the surface of the first member to be connected 210.

[0103] Exemplarily, the surface of the first part to be connected 210 is first polished, for example, the surface of the first part to be connected 210 can be polished with sandpaper. Then, the surface of the first part to be connected 210 is repeatedly cleaned with a cleaning material such as acetone or alcohol. Then, the cleaned surface of the first part to be connected 210 is rinsed with deionized water. Finally, the first part to be connected 210 is placed in a dryer for drying.

[0104] It is explained here that only the surface of the first member to be connected 210 on which the first connection film is to be formed may be pretreated, or all surfaces of the first member to be connected 210 may be pretreated. The present application embodiment does not limit this, and it can be reasonably set according to actual conditions.

[0105] S12, such as Figure 6B As shown, a second dielectric layer 320 is formed.

[0106] In some embodiments, Figure 6B As shown, a second dielectric layer 320 is formed on the surface of the first member to be connected 210 .

[0107] That is to say, the second dielectric layer 320 is formed on the surface of the first member to be connected 210 .

[0108] For example, the second dielectric layer 320 may be formed on the surface of the first to-be-connected member 210 by using a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a magnetron sputtering process, or an atomic layer deposition (ALD) process.

[0109] The material of the second dielectric layer 320 may include metals such as titanium, molybdenum, chromium or tungsten.

[0110] The second dielectric layer 320 is formed on the surface of the first member to be connected 210 , and serves to improve the connection strength between the first member to be connected 210 and the first connection film to be formed.

[0111] In addition, since the material of the second dielectric layer 320 has good thermal conductivity, the thermal conductivity between the first to-be-connected member 210 and the first connection film to be formed can be improved.

[0112] The embodiment of the present application does not limit the thickness of the second dielectric layer 320. Exemplarily, the thickness of the second dielectric layer 320 is between 10 nm and 200 nm. For example, the thickness of the second dielectric layer 320 is 10 nm, 34 nm, 68 nm, 92 nm, 127 nm, 150 nm, 175 nm, 186 nm, or 200 nm.

[0113] The second dielectric layer 320 may be a single-layer structure or a structure formed by stacking multiple layers. For example, the second dielectric layer 320 may include a stacked titanium metal layer and a stacked molybdenum metal layer. Alternatively, for example, the second dielectric layer 320 may include a stacked chromium metal layer and a stacked tungsten metal layer.

[0114] S13, such as Figure 6C As shown, a first dielectric layer 310 is formed.

[0115] In some embodiments, Figure 6C As shown, a first dielectric layer 310 is formed on the first member to be connected 210 .

[0116] That is to say, the first dielectric layer 310 is formed on the first to-be-connected member 210 .

[0117] In other words, the first dielectric layer 310 is formed on the side of the second dielectric layer 320 away from the first to-be-connected member 210. For example, the first dielectric layer 310 is formed on the surface of the second dielectric layer 320 away from the first to-be-connected member 210.

[0118] For example, the first dielectric layer 310 may be formed by a physical vapor deposition process, a chemical vapor deposition process, a magnetron sputtering process, or an atomic layer deposition process.

[0119] The material of the first dielectric layer 310 is different from the material of the second dielectric layer 320. The material of the first dielectric layer 310 may include, for example, metals such as gold, silver or copper.

[0120] The first dielectric layer 310 is formed on the first member to be connected 210 , and functions to improve the connection strength between the first member to be connected 210 and the first connection film to be formed.

[0121] In addition, since the material of the first dielectric layer 310 has good thermal conductivity, the thermal conductivity between the first member to be connected 210 and the first connection film to be formed can also be improved.

[0122] The embodiment of the present application does not limit the thickness of the first dielectric layer 310. Exemplarily, the thickness of the first dielectric layer 310 is between 0.1 μm and 1 μm, for example, the thickness of the first dielectric layer 310 is 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm.

[0123] The first dielectric layer 310 may be a single-layer structure or a structure formed by stacking multiple layers. For example, the first dielectric layer 310 may include a stacked gold metal layer and a stacked silver metal layer. Alternatively, for example, the first dielectric layer 310 may include a stacked chromium-silver metal layer and a copper metal layer.

[0124] It can be understood that the formation of the first dielectric layer 310 can be determined according to the material of the first member to be connected 210 and the material of the first connection film to be formed.

[0125] It is explained here that, with respect to the first member to be connected 210, whether to form the first dielectric layer 310 and the second dielectric layer 320 on the first member to be connected 210, step S12 may be performed first to form the second dielectric layer 320, and then step S13 may be performed to form the first dielectric layer 310. Alternatively, only step S12 may be performed to form the second dielectric layer 320. Alternatively, only step S13 may be performed to form the first dielectric layer 310. Alternatively, the first dielectric layer 310 and the second dielectric layer 320 may not be formed on the first member to be connected 210.

[0126] For the convenience of illustration, the following is illustrated by taking the case where only the first dielectric layer 310 is formed on the first member to be connected 210 .

[0127] S14, such as Fig.6D As shown, a first metal layer 101 is formed on the first member to be connected 210 .

[0128] That is to say, the first metal layer 101 is formed on a side of the first dielectric layer 310 away from the first to-be-connected member 210 .

[0129] In other words, the first metal layer 101 is formed on a side of the first dielectric layer 310 away from the first to-be-connected member 210. For example, the first metal layer 101 is formed on a surface of the first dielectric layer 310 away from the first to-be-connected member 210.

[0130] The first metal layer 101 may be formed by, for example, a physical vapor deposition process, a chemical vapor deposition process, a magnetron sputtering process or an atomic layer deposition process.

[0131] In this way, the surface of the first member to be connected 210 close to the first connection film 110 can be fitted with the surface of the first connection film 110 close to the first member to be connected 210, thereby making the first member to be connected 210 and the first connection film 110 more closely connected and improving the connection strength.

[0132] In other words, the surface of the first dielectric layer 310 close to the first connection film 110 is in contact with the surface of the first connection film 110 close to the first member to be connected 210 .

[0133] A method for forming the first metal layer 101 by using a magnetron sputtering process is illustrated below.

[0134] Exemplarily, the first component to be connected 210 is first placed in a magnetron dual-target co-sputtering system. In the magnetron dual-target co-sputtering system, one target material may be, for example, a metal target material, and the other target material may be, for example, a sodium chloride (NaCl) target material, and the introduced reaction gas may be, for example, chlorine (Cl2). The background pressure of the magnetron dual-target co-sputtering system is first set to 5×10 - 4 Pa, that is, the gas pressure in the chamber of the magnetron dual-target co-sputtering system is 5×10 -4 Pa. Then set the gas flow rate of chlorine to between 10sccm and 60sccm, the RF power supply power to between 40W and 100W, and the gas pressure to between 2Pa and 5Pa, so as to start the metal target and the sodium chloride target. Next, adjust the gas pressure to between 0.5Pa and 1Pa under the condition that the gas flow rate of chlorine is continuously maintained at between 10sccm and 60sccm, and the RF power supply power is continuously maintained at between 40W and 100W. At this time, open the baffle of the metal target, cover the sodium chloride target, and sputter deposit the metal film layer for 1min to 5min. To form the first metal layer 101.

[0135] The metal target material may include, for example, one or more of a gold metal target material, a silver metal target material or a copper metal target material.

[0136] It is explained here that the first metal layer 101 can be formed by, for example, a physical vapor deposition process, a chemical vapor deposition process, a magnetron sputtering process or an atomic layer deposition process.

[0137] S15, such as Fig. 6E As shown, a second metal layer 102 and a plurality of sacrificial particles 103 are formed on a side of the first metal layer 101 away from the first to-be-connected member 210 .

[0138] In the embodiment of the present application, the second metal layer 102 and the sacrificial particles 103 are simultaneously formed on the first metal layer 101. That is, in the same process step, the second metal layer 102 and the sacrificial particles 103 are deposited on the first metal layer 101. In this way, a mixed material of the second metal layer 102 and the sacrificial particles 103 can be formed on the first metal layer 101.

[0139] In the subsequent preparation process, the sacrificial particles 103 are removed by a removal process without affecting the structure of the second metal layer 102. After the sacrificial particles 103 are removed, holes are formed at the locations of the sacrificial particles 103.

[0140] Exemplarily, the radial size of the sacrificial particle 103 is between 1 nm and 300 nm. For example, the radial size of the sacrificial particle 103 is 30 nm, 67 nm, 142 nm, 178 nm, 225 nm, 260 nm, or 280 nm.

[0141] It is explained here that the radial direction of the sacrificial particle 103 can be understood as the direction passing through the axis of the sacrificial particle 103, and the radial dimension of the sacrificial particle 103 can be understood as the maximum dimension along the axis of the sacrificial particle 103. Fig. 6E As shown, the radial dimension of the sacrificial particle 103 is indicated by d1.

[0142] Exemplarily, the rate of forming the second metal layer 102 remains unchanged, and the rate of forming the sacrificial particles 103 gradually increases.

[0143] In this way, the sacrificial particles 103 formed in the same time period gradually increase, so that as the deposition time increases, the distribution density of the sacrificial particles 103 increases.

[0144] Alternatively, illustratively, the rate of forming the second metal layer 102 is gradually reduced, and the rate of forming the sacrificial particles 103 remains unchanged.

[0145] In this way, the second metal layer 102 formed in the same time period gradually decreases, so that as the deposition time increases, the distribution density of the second metal layer 102 decreases, and then the distribution density of the sacrificial particles 103 increases.

[0146] It is explained here that in the embodiment of the present application, there is no limitation on the deposition rate of the second metal layer 102 and the deposition rate of the sacrificial particles 103, which can be reasonably set according to actual conditions. It only needs to ensure that the distribution density of the plurality of sacrificial particles 103 gradually increases along the direction pointing from the first metal layer 101 to the first metal layer 101.

[0147] Exemplarily, on the basis of step S141, the power of the metal target is kept unchanged, and the baffle of the sodium chloride target is opened, so that the sodium chloride target begins to sputter under the condition that the RF power is 40W to 60W, and the RF power of the sodium chloride target is gradually increased to 200W, and the sputtering time is continued for 5min to 60min to form a second metal layer 102 and a plurality of sacrificial particles 103.

[0148] That is to say, Fig. 6E As shown, a sodium chloride-metal composite film layer with a gradient distribution is deposited on the first member to be connected 210 .

[0149] The particles deposited by the sodium chloride target are called sacrificial particles 103, and the particles deposited by the metal target are called metal particles. In other words, the sodium chloride target is used as a sacrificial target.

[0150] like Fig. 6E As shown, a plurality of sacrificial particles 103 are located in the second metal layer 102 .

[0151] It is explained here that the metal particles deposited when forming the first metal layer 101 are the same as the metal particles of the second metal layer 102 .

[0152] Continue to refer Fig. 6E It can be seen that the distribution density of the plurality of sacrificial particles 103 gradually increases along the direction from the first metal layer 101 to the second metal layer 102. This is because, in the process of forming the second metal layer 102 and the plurality of sacrificial particles 103, the RF power of the sodium chloride target is changed to change the sputtering rate of the sodium chloride target, so that the deposition of the sodium chloride particles (i.e., the above-mentioned sacrificial particles 103) gradually increases. In the embodiment of the present application, the composition gradient of the sputtered film is controlled by controlling the sputtering rate of different target materials.

[0153] It is explained here that the composition gradient of the sputtered film can be controlled by changing the sputtering rate of the sodium chloride target only. Alternatively, the composition gradient of the sputtered film can be controlled by changing the sputtering rate of the metal target only. Alternatively, the sputtering rate of the sodium chloride target and the sputtering rate of the metal target can be changed at the same time to control the composition gradient of the sputtered film. The embodiment of the present application does not limit this, and it can be reasonably set according to the actual situation.

[0154] It is explained here that the second metal layer 102 and the sacrificial particles 103 may be formed by, for example, a physical vapor deposition process, a chemical vapor deposition process, a magnetron sputtering process or an atomic layer deposition process.

[0155] S16, such as Fig. 6F As shown, a plurality of sacrificial particles 103 are removed to form a plurality of holes 104 , so as to form a first connection film 110 .

[0156] For example, the first member to be connected 210 with the deposited sodium chloride-metal composite film layer can be immersed in deionized water to dissolve the sodium chloride particles in the composite film layer, and then dried to obtain the second metal layer 102 with a plurality of holes 104 .

[0157] Since the sodium chloride particles in the second metal layer 102 are removed, the holes 104 are formed after the sodium chloride particles are removed, so that the second metal layer 102 has the holes 104 .

[0158] like Fig. 6F As shown, the second metal layer 102 has a plurality of holes 104 therein.

[0159] That is, the location of the holes 104 is the location of the sacrificial particles 103 in the second metal layer 102, so the distribution density of the plurality of holes 104 gradually increases along the direction from the first metal layer 101 to the second metal layer 102. In other words, the farther away from the first metal layer 101, the more holes 104 are distributed.

[0160] Exemplarily, the radial dimension of any hole 104 is between 1 nm and 300 nm. For example, the radial dimension of the hole 104 is 30 nm, 67 nm, 142 nm, 178 nm, 225 nm, 260 nm or 280 nm. It is explained here that the radial direction of the hole 104 can be understood as the direction passing through the axis of the hole 104, and the radial dimension of the hole 104 can be understood as the maximum dimension along the axis of the hole 104. Fig. 6F As shown, the radial dimension of the hole 104 is indicated by d2.

[0161] At this time, the first metal layer 101 and the second metal layer 102 constitute a first connection film 110 .

[0162] It is explained here that the metal particles deposited when forming the first metal layer 101 are the same as the metal particles of the second metal layer 102. That is, the material forming the first metal layer 101 is the same as the material forming the second metal layer 102.

[0163] Exemplarily, the thickness of the first connection film 110 is between 0.01 μm and 10 μm. That is, the sum of the thickness of the first metal layer 101 and the thickness of the second metal layer 102 is between 0.01 μm and 10 μm. For example, the first connection film 110 is 0.01 μm, 0.5 μm, 1.3 μm, 2.6 μm, 3.5 μm, 4.1 μm, 5.7 μm, 6.9 μm, 7.8 μm, 8.9 μm, 9.3 μm or 10 μm, etc.

[0164] like Fig. 6FAs shown, along the direction from the first to-be-connected member 210 to the first connection film 110 , the number of holes 104 in the first connection film 110 gradually increases.

[0165] At this point, the preparation of the connection assembly 20 is completed.

[0166] The method for preparing the above-mentioned connection assembly provided in the embodiment of the present application is not limited to any step sequence and can be reasonably adjusted as needed.

[0167] In addition, the above steps S11-S16 may remove some steps as needed, and are not limited to include every step. Some steps may also be added as needed, and are not limited to only include the above steps.

[0168] The following examples illustrate the connection components provided in the embodiments of the present application. The connection components can be prepared using the above-mentioned preparation method of the connection components.

[0169] Based on this, Figure 7 As shown, the connection assembly 20 includes a first member to be connected 210 and a first connection film 110 disposed on the first member to be connected 210. The first connection film 110 includes a metal layer 131 and a plurality of holes 104 located in the metal layer 131. Along the direction from the first member to be connected 210 to the first connection film 110, the distribution density of the plurality of holes 104 gradually increases.

[0170] Regarding the first connection film 110, illustratively, Figure 8 As shown, the first connection film 110 includes a first metal layer 101 and a second metal layer 102. The second metal layer 102 has a hole 104 therein.

[0171] Exemplarily, the radial dimension of any hole 104 is between 1 nm and 300 nm. For example, the radial dimension of the hole 104 is 30 nm, 67 nm, 142 nm, 178 nm, 225 nm, 260 nm or 280 nm. It is explained here that the radial direction of the hole 104 can be understood as the direction passing through the axis of the hole 104, and the radial dimension of the hole 104 can be understood as the maximum dimension along the axis of the hole 104. Figure 8 As shown, the radial dimension of the hole 104 is indicated by d2.

[0172] Along the direction from the first to-be-connected member 210 to the first connection film 110, the number of holes 104 in the first connection film 110 gradually increases. Figure 8 As shown, along the direction from the first to-be-connected member 210 to the first connection film 110 , the first connection film 110 may include a first section A, a second section B, and a third section C which are arranged in sequence.

[0173] The plurality of holes are distributed in the second section B and the third section C. The volume proportion of the holes 104 in the second section B is between 5% and 50%, and the volume proportion of the holes 104 in the third section C is between 50% and 95%.

[0174] In each interval, the distribution density of the holes 104 increases gradually along the direction from the first to-be-connected member 210 to the first connection film 110 .

[0175] That is, the distribution density of the holes 104 in the third section C is greater than the distribution density of the holes 104 in the second section B.

[0176] In some embodiments, the first section A of the first connection film 110 may have no holes 104 or may have fewer holes 104. That is, the distribution density of the holes 104 in the second section B is greater than that in the first section A.

[0177] The first interval A may be regarded as the first metal layer 101 .

[0178] The embodiment of the present application does not limit whether the holes 104 are distributed in the first section A of the first connection film 110. In some cases, the holes 104 in the first section A are relatively few, or almost absent.

[0179] Exemplarily, the ratio of the thickness of the first interval A to the thickness of the first connection film 110 is between 10% and 40%, the ratio of the thickness of the second interval B to the thickness of the first connection film 110 is between 40% and 60%, and the ratio of the thickness of the third interval C to the thickness of the first connection film 110 is between 10% and 30%. For example, the thickness of the first interval A accounts for 30% of the thickness of the first connection film 110, the thickness of the second interval B accounts for 50% of the thickness of the first connection film 110, and the thickness of the third interval C accounts for 20% of the thickness of the first connection film 110.

[0180] In this way, the holes 104 included in the first connection film 110 have multiple distribution modes.

[0181] Regarding the materials of the first metal layer 101 and the second metal layer 102, illustratively, the material of the first metal layer 101 may include one or more of gold, silver or copper, and the material of the second metal layer 102 may include one or more of gold, silver or copper.

[0182] Since the first connection film 110 has more holes 104 , the first connection film 110 has a higher surface energy. Therefore, the surfaces where the first connection film 110 and the second connection film 120 are attached to each other have low-temperature sintering properties.

[0183] Continue to refer Figure 7In some embodiments, the connection component 20 further includes a first dielectric layer 310 .

[0184] The material of the first dielectric layer 310 may include metals such as gold, silver or copper.

[0185] Exemplarily, the first dielectric layer 310 may be a single-layer structure or a structure formed by stacking multiple layers. For example, the first dielectric layer 310 may include a stacked gold metal layer and a stacked silver metal layer. Alternatively, exemplary, the first dielectric layer 310 may include a stacked chromium-silver metal layer and a copper metal layer.

[0186] The embodiment of the present application does not limit the thickness of the first dielectric layer 310. Exemplarily, the thickness of the first dielectric layer 310 is between 0.1 μm and 1 μm, for example, the thickness of the first dielectric layer 310 is 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm.

[0187] For example, Figure 7 As shown, the first dielectric layer 310 is located between the first member to be connected 210 and the first connection film 110 .

[0188] That is to say, the first dielectric layer 310 is disposed between the first member to be connected 210 and the first connection film 110 .

[0189] In this way, the connection strength between the first member to be connected 210 and the first connection film 110 can be improved.

[0190] In addition, since the material of the first dielectric layer 310 has good thermal conductivity, the thermal conductivity between the first to-be-connected member 210 and the first connection film 110 can be improved.

[0191] It is explained here that in the embodiment of the present application, whether the first dielectric layer 310 is disposed between the first member to be connected 210 and the first connection film 110 is not limited and can be reasonably disposed according to actual conditions.

[0192] In some embodiments, Fig. 9 As shown, the connection assembly 20 further includes a second dielectric layer 320 .

[0193] like Fig. 9 As shown, the second dielectric layer 320 is located on a side of the first dielectric layer 310 away from the first connection film 110 .

[0194] The material of the second dielectric layer 320 is different from the material of the first dielectric layer 310 .

[0195] For example, the material of the second dielectric layer 320 may include one or more of titanium, molybdenum, chromium or tungsten.

[0196] The second dielectric layer 320 may be a single-layer structure or a structure formed by stacking multiple layers. For example, the second dielectric layer 320 may include a stacked titanium metal layer and a stacked molybdenum metal layer. Alternatively, for example, the second dielectric layer 320 may include a stacked chromium metal layer and a stacked tungsten metal layer.

[0197] The embodiment of the present application does not limit the thickness of the second dielectric layer 320. Exemplarily, the thickness of the second dielectric layer 320 is between 10 nm and 200 nm. For example, the thickness of the second dielectric layer 320 is 10 nm, 34 nm, 68 nm, 92 nm, 127 nm, 150 nm, 175 nm, 186 nm, or 200 nm.

[0198] For example, Fig. 9 As shown, the second dielectric layer 320 is located between the first member to be connected 210 and the first connection film 110 .

[0199] That is to say, the second dielectric layer 320 and the first dielectric layer 310 are disposed between the first to-be-connected member 210 and the first connection film 110 .

[0200] In this way, the connection strength between the first member to be connected 210 and the first connection film 110 can be improved.

[0201] In addition, since the material of the second dielectric layer 320 has good thermal conductivity, the thermal conductivity between the first to-be-connected member 210 and the first connection film 110 can be improved.

[0202] like Fig.10 As shown, the embodiment of the present application also provides a method for preparing an interconnection component, comprising:

[0203] S21, such as Fig.11A As shown, a first connection component 21 and a second connection component 22 are provided.

[0204] It is explained here that the first connecting component 21 and the second connecting component 22 can be prepared according to the preparation method of the connecting component mentioned above.

[0205] The first connection assembly 21 includes a first member to be connected 210 and a first connection film 110 . The first connection film 110 has a first surface 110 a away from the first member to be connected 210 .

[0206] The second connection assembly 22 includes a second member to be connected 220 and a second connection film 120 . The second connection film 120 has a second surface 120 a away from the second member to be connected 210 .

[0207] Exemplarily, the first part to be connected 210 may be a chip, and the second part to be connected 220 may be a package board 11. Alternatively, exemplary, the first part to be connected 210 may be a package board 11, and the second part to be connected 220 may be a printed circuit board. Alternatively, exemplary, the first part to be connected 210 may be an optical device, and the second part to be connected 220 may be a bracket. The embodiment of the present application does not limit the implementation of the first part to be connected 210 and the second part to be connected 220. As long as any two structures that need to be connected can be the first part to be connected 210 or the second part to be connected 220, they can be reasonably set according to actual needs.

[0208] The material of the first member to be connected 210 includes, for example, one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum, or iron. The material of the second member to be connected 220 includes, for example, one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum, or iron. The material of the first member to be connected 210 and the material of the second member to be connected 220 may be the same or different.

[0209] Exemplarily, the first member to be connected 210 and the second member to be connected 220 include, but are not limited to, structures that can have a certain degree of weldability with a metal film after simple surface treatment or metallization.

[0210] It is explained here that, regarding the first dielectric layer 310 and the second dielectric layer 320, in the embodiment of the present application, at least one of the first dielectric layer 310 and the second dielectric layer 320 may be disposed between the first member to be connected 210 and the first connection film 110, or at least one of the first dielectric layer 310 and the second dielectric layer 320 may be disposed between the second member to be connected 220 and the second connection film 120. It can be reasonably arranged according to the actual situation, and the embodiment of the present application does not limit this.

[0211] For the convenience of illustration, the following is an illustration in which only the first dielectric layer 310 is formed on both the first member to be connected 210 and the second member to be connected 220 .

[0212] S22 , bonding the first surface 110 a and the second surface 120 a to form a connection layer 130 .

[0213] Exemplarily, step S22 includes:

[0214] S221, such as Fig. 11B As shown, the first surface 110a and the second surface 120a are pre-bonded under pressure and a first temperature.

[0215] That is, the first member 210 to be connected formed with the first connection film 110 and the second member 220 to be connected formed with the second connection film 120 are placed opposite to each other, and the first connection film 110 and the second connection film 120 are in contact. That is, the first surface 110a of the first connection film 110 and the second surface 120a of the second connection film 120 are in contact.

[0216] Exemplarily, after the first surface 110 a of the first connection film 110 and the second surface 120 a of the second connection film 120 are attached to each other, the first surface 110 a and the second surface 120 a are pre-bonded.

[0217] The surfaces of the first connection film 110 and the second connection film 120 to be bonded provided by the embodiment of the present application have many holes distributed thereon, and are loose and easy to compress. Therefore, the bonding temperature and bonding pressure required when bonding the first connection film 110 and the second connection film 120 are both low. In other words, the first connection film 110 and the second connection film 120 can be bonded under low temperature and low pressure conditions. The pressure and temperature required for the preparation method of the interconnection structure provided by the embodiment of the present application are both relatively low.

[0218] S222, such as Fig. 11C As shown, the first connection film 110 and the second connection film 120 are bonded to form a connection layer 130 .

[0219] like Fig. 11C As shown, the connection layer 130 is located between the first member to be connected 210 and the second member to be connected 220. The connection layer 130 is used to connect the first member to be connected 210 and the second member to be connected 220.

[0220] Exemplarily, along the direction from the first to-be-connected member 210 to the second to-be-connected member 220 , the connection layer 130 may include a fourth section D, a fifth section E, and a sixth section F which are arranged in sequence.

[0221] The plurality of holes 104 are distributed in the fifth section E, and the volume proportion of the holes 104 in the fifth section E is between 5% and 95%.

[0222] In some embodiments, the fourth section D and the sixth section F of the connection layer 130 may have no holes 104 or may have fewer holes 104 .

[0223] In this way, the connection layer 130 formed by bonding the connection films (the first connection film 110 and the second connection film 120 ) has more holes 104 in the middle, and almost no holes 104 on both sides.

[0224] That is, the fourth section D of the connection layer 130 can be regarded as the first section A of the first connection film 110, and the sixth section F of the connection layer 130 can be regarded as the first section A of the second connection film 120. The fifth section E of the connection layer 130 can be regarded as the third section C of the first connection film 110 and the third section C of the second connection film 120 are formed by bonding.

[0225] Exemplarily, the ratio of the thickness of the fourth interval D to the thickness of the connecting layer 130 is between 20% and 40%, the ratio of the thickness of the fifth interval E to the thickness of the connecting layer 130 is between 30% and 50%, and the ratio of the thickness of the sixth interval F to the thickness of the connecting layer 130 is between 20% and 40%. For example, the thickness of the fourth interval D accounts for 30% of the thickness of the connecting layer 130, the thickness of the fifth interval E accounts for 40% of the thickness of the connecting layer 130, and the thickness of the sixth interval F accounts for 30% of the thickness of the connecting layer 130.

[0226] In this way, the holes 104 included in the connection layer 130 have multiple distribution modes.

[0227] In the embodiment of the present application, the bonding thickness is not limited. For example, only part of the third section C of the first connection film 110 and part of the third section C of the second connection film 120 may be bonded. Alternatively, the third section C of the first connection film 110 and the third section C of the second connection film 120 may be bonded in their entirety. Alternatively, after the third section C of the first connection film 110 and the third section C of the second connection film 120 are bonded in their entirety, bonding may be continued to the second section B of part of the first connection film 110 and part of the second section B of the second connection film 120.

[0228] It is explained here that the size of the bond is related to the temperature and pressure during the bonding process.

[0229] The thickness of the connection layer 130 is less than 5 μm, achieving ultra-thin interface connection. The strength of the connection layer 130 is greater than 30 MPa, and the thermal resistance is less than 1 mm. 2 K / W, thermal conductivity is greater than 200W / mK.

[0230] The connection layer 130 formed in the embodiment of the present application realizes an interconnection component with high strength, low thermal resistance and high thermal conductivity.

[0231] The method for preparing the above interconnection assembly provided in the embodiment of the present application is not limited to any sequence of steps and can be reasonably adjusted as needed.

[0232] In addition, the above steps S21-S22 may remove some steps as needed, and are not limited to including every step. Some steps may also be added as needed, and are not limited to only including the above steps.

[0233] The method for preparing the interconnection component provided in the embodiment of the present application deposits metal film layers sequentially from the surface of the first part to be connected 210 and the second part to be connected 220, and the surface of the first part to be connected 210 or the second part to be connected 220 is not limited, and is applicable to the surfaces of various parts to be connected. Since the distribution density of the holes 104 of the first connection film 110 and the second connection film 120 is gradually increased, the holes 104 in the connection layer 130 formed by connecting the first connection film 110 and the second connection film 120 are also changed. There are more holes 104 distributed near the middle area of ​​the connection layer 130, and they gradually decrease in the direction of the first part to be connected 210 and the second part to be connected 220. That is, in the direction from the first part to be connected 210 to the second part to be connected 220, the density of the connection layer 130 first decreases and then increases, realizing a distribution from dense to non-dense, and then to dense. In this way, the connection layer 130 can improve the connectivity between the first member to be connected 210 and the second member to be connected 220 , and can improve the heat transfer between the first member to be connected 210 and the second member to be connected 220 , which is beneficial to heat dissipation.

[0234] In addition, since the distribution density of the holes 104 of the first connection film 110 gradually increases along the direction from the first to-be-connected member 210 to the first connection film 110, and the distribution density of the holes 104 of the second connection film 120 gradually increases along the direction from the second to-be-connected member 220 to the second connection film 120, this structure with more holes 104 has the characteristics of being loose and compressible, so that the connection between the first connection film 110 and the second connection film 120 can be achieved at a relatively low pressure to form the connection layer 130. Since there are more holes 104 on the surface of the first connection film 110 and the second connection film 120, they have a relatively high surface energy, and thus the surfaces of the first connection film 110 and the second connection film 120 that are bonded to each other have low-temperature sintering properties.

[0235] Since the thickness of the connection layer 130 is relatively small, lower thermal resistance can be achieved. In addition, during the connection process between the first part to be connected 210 and the second part to be connected 220, only metal materials are connected without adding other materials, thus avoiding the residue of other materials and having better vacuum service stability.

[0236] The following examples illustrate the interconnection components provided in the embodiments of the present application. The interconnection components can be prepared by using the above-mentioned method for preparing the interconnection components.

[0237] Based on this, Fig.12As shown, the interconnection assembly 10 includes a first member to be connected 210, a second member to be connected 220, and a connection layer 130 for connecting the first member to be connected 210 and the second member to be connected 220. The connection layer 130 includes a metal layer 131 and a plurality of holes 104 located in the metal layer 131. In the direction from the first member to be connected 210 to the second member to be connected 220, the distribution density of the holes 104 increases first and then decreases.

[0238] Exemplarily, the material of the first member to be connected 210 includes one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum, or iron. The material of the second member to be connected 220 includes one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum, or iron. The material of the first member to be connected 210 and the material of the second member to be connected 220 may be the same or different.

[0239] For example, the first component to be connected 210 includes a chip, and the second component to be connected 220 includes a printed circuit board.

[0240] Regarding the connection layer 130, Fig.12 As shown, the connection layer 130 is located between the first member to be connected 210 and the second member to be connected 220 , and is used to connect the first member to be connected 210 and the second member to be connected 220 .

[0241] The connection layer 130 is formed by bonding two connection films (a first connection film 110 and a second connection film 120 ) disposed opposite to each other.

[0242] Since the connection layer 130 is formed by bonding the first connection film 110 and the second connection film 120, that is, bonding the surfaces of the first connection film 110 and the second connection film 120 where the holes 104 are more distributed, to form the connection layer 130. It can be regarded as bonding the portions of the first connection film 110 and the second connection film 120 where the volume proportion of the holes 104 is between 50% and 95%, respectively. Therefore, the thickness of the connection layer 130 is small, and the holes 104 in the connection layer 130 increase first and then decrease.

[0243] Exemplarily, along the direction from the first to-be-connected member 210 to the second to-be-connected member 220 , the connection layer 130 may include a fourth section D, a fifth section E, and a sixth section F which are arranged in sequence.

[0244] The thickness of the fourth section D accounts for 30% of the thickness of the connecting layer 130 , the thickness of the fifth section E accounts for 40% of the thickness of the connecting layer 130 , and the thickness of the sixth section F accounts for 30% of the thickness of the connecting layer 130 .

[0245] The plurality of holes 104 are distributed in the fifth section E, and the volume proportion of the holes 104 in the fifth section E is between 5% and 95%.

[0246] In some embodiments, the fourth section D and the sixth section F of the connection layer 130 may have no holes 104 or may have fewer holes 104 .

[0247] In this way, the connection layer 130 formed by bonding the connection films (the first connection film 110 and the second connection film 120 ) has more holes 104 in the middle, and almost no holes 104 on both sides.

[0248] That is, the fourth section D of the connection layer 130 can be regarded as the first section A of the first connection film 110, and the sixth section F of the connection layer 130 can be regarded as the first section A of the second connection film 120. The fifth section E of the connection layer 130 can be regarded as the third section C of the first connection film 110 and the third section C of the second connection film 120 are formed by bonding.

[0249] Exemplarily, the ratio of the thickness of the fourth interval D to the thickness of the connecting layer 130 is between 20% and 40%, the ratio of the thickness of the fifth interval E to the thickness of the connecting layer 130 is between 30% and 50%, and the ratio of the thickness of the sixth interval F to the thickness of the connecting layer 130 is between 20% and 40%. For example, the thickness of the fourth interval D accounts for 30% of the thickness of the connecting layer 130, the thickness of the fifth interval E accounts for 40% of the thickness of the connecting layer 130, and the thickness of the sixth interval F accounts for 30% of the thickness of the connecting layer 130.

[0250] In this way, the holes 104 included in the connection layer 130 have multiple distribution modes.

[0251] In the embodiment of the present application, the bonding thickness is not limited. For example, only part of the third section C of the first connection film 110 and part of the third section C of the second connection film 120 may be bonded. Alternatively, the third section C of the first connection film 110 and the third section C of the second connection film 120 may be bonded in their entirety. Alternatively, after the third section C of the first connection film 110 and the third section C of the second connection film 120 are bonded in their entirety, bonding may be continued to the second section B of part of the first connection film 110 and part of the second section B of the second connection film 120.

[0252] Exemplarily, the thickness of the connection layer 130 is less than 5 μm. For example, the thickness of the connection layer is 1 μm, 2 μm, 3 μm or 4 μm.

[0253] The strength of the connection layer 130 is greater than 30MPa and the thermal resistance is less than 1mm 2 K / W, thermal conductivity is greater than 200W / mK.

[0254] The connection layer 130 formed in the embodiment of the present application realizes an interconnection component with high strength, low thermal resistance and high thermal conductivity.

[0255] Exemplarily, the material of the metal layer 131 may include one or more of gold, silver or copper.

[0256] Since the connection layer 130 has more holes 104 , the connection layer 130 has a higher surface energy. Therefore, the surfaces where the first connection film 110 and the second connection film 120 are attached to each other have low-temperature sintering properties.

[0257] like Fig.13 FIG. 1 is a schematic diagram of the structure of an interconnection component provided by an embodiment of the present application under a microscope. Fig.13 It can be seen that the thickness of the connection layer 130 in the interconnection assembly 10 provided in the embodiment of the present application is relatively small, and the interface between the connection layer 130 and the first to-be-connected member 210 and the second to-be-connected member 220 is in good contact with each other.

[0258] In the interconnection assembly 10 provided in the embodiment of the present application, the holes 104 of the connection layer 130 near the middle area are distributed more, and gradually decrease in the direction of the first to-be-connected part 210 and the second to-be-connected part 220. That is, in the direction from the first to-be-connected part 210 to the second to-be-connected part 220, the density of the connection layer 130 first decreases and then increases, realizing a distribution from dense to non-dense, and then to dense. In this way, the connection layer 130 can improve the connectivity of the first to-be-connected part 210 and the second to-be-connected part 220, and can improve the heat transfer between the first to-be-connected part 210 and the second to-be-connected part 220, which is beneficial to heat dissipation.

[0259] In addition, since the connection layer 130 has more holes 104 on its surface and higher surface energy, the surfaces where the first to-be-connected member 210 and the second to-be-connected member 220 adhere to the connection layer 130 have low-temperature sintering properties.

[0260] Since the thickness of the connection layer 130 is relatively small, lower thermal resistance can be achieved. In addition, during the connection process between the first part to be connected 210 and the second part to be connected 220, only metal materials are connected without adding other materials, thus avoiding the residue of other materials and having better vacuum service stability.

[0261] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A connection assembly, characterized in that: include: A first part to be connected; A first connecting film, disposed on the first component to be connected; The first connection film includes a metal layer and a plurality of holes, wherein the plurality of holes are located in the metal layer; Along the direction from the first member to be connected to the first connecting film, the distribution density of the plurality of holes gradually increases.

2. The connection assembly according to claim 1, characterized in that: The radial dimension of any of the holes is between 1 nm and 300 nm.

3. The connection assembly according to claim 1 or 2, characterized in that: The thickness of the first connecting film is between 0.01 μm and 10 μm.

4. The connection assembly according to any one of claims 1 to 3, characterized in that: The material of the metal layer includes one or more of gold, silver or copper.

5. The connection assembly according to any one of claims 1 to 4, characterized in that: The material of the first member to be connected includes one or more of silicon, diamond, aluminum nitride, aluminum oxide, silicon carbide, copper, aluminum or iron.

6. The connection assembly according to any one of claims 1 to 5, characterized in that: Along the direction from the first part to be connected to the first connecting film, the first connecting film includes a first section, a second section and a third section arranged in sequence; the multiple holes are distributed in the second section and the third section; the volume proportion of the holes in the second section is between 5% and 50%, and the volume proportion of the holes in the third section is between 50% and 95%.

7. The connection assembly according to claim 6, characterized in that: The ratio of the thickness of the first interval to the thickness of the first connecting film is between 10% and 40%, the ratio of the thickness of the second interval to the thickness of the first connecting film is between 40% and 60%, and the ratio of the thickness of the third interval to the thickness of the first connecting film is between 10% and 30%.

8. The connection assembly according to any one of claims 1 to 7, characterized in that: The connection assembly further includes a first dielectric layer; the first dielectric layer is arranged between the first component to be connected and the first connection film.

9. The connection assembly according to claim 8, characterized in that: The material of the first dielectric layer includes gold, silver or copper.

10. The connection assembly according to claim 8 or 9, characterized in that: The thickness of the first dielectric layer is between 0.01 μm and 10 μm.

11. The connection assembly according to any one of claims 8 to 10, characterized in that: The connection assembly further includes a second dielectric layer; the second dielectric layer is located on a side of the first dielectric layer away from the first connection film.

12. The connection assembly according to claim 11, characterized in that The material of the first dielectric layer is different from the material of the second dielectric layer.

13. The connection assembly according to claim 11 or 12, characterized in that: The material of the second dielectric layer includes titanium, molybdenum, chromium or tungsten.

14. The connection assembly according to any one of claims 11 to 13, characterized in that: The thickness of the second dielectric layer is between 10 nm and 200 nm.

15. A method for preparing a connection assembly, characterized in that: include: forming a first metal layer on the first member to be connected; forming a second metal layer and a plurality of sacrificial particles on a side of the first metal layer away from the first member to be connected; The sacrificial particles are located in the second metal layer, and the distribution density of the sacrificial particles gradually increases along the direction from the first metal layer to the second metal layer; The plurality of sacrificial particles are removed to form a plurality of holes to form the first connection film.

16. The method for preparing a connection assembly according to claim 15, characterized in that: A second metal layer and a plurality of sacrificial particles are formed on a side of the first metal layer away from the first component to be connected, including: The second metal layer and the sacrificial particles are formed on the first metal layer at the same time, wherein the rate of forming the second metal layer remains unchanged, and the rate of forming the sacrificial particles gradually increases.

17. The method for preparing a connection assembly according to claim 15 or 16, characterized in that: The material of the sacrificial particles includes sodium chloride.

18. The method for preparing a connection assembly according to any one of claims 15 to 17, characterized in that: The process of forming the second metal layer and the sacrificial particles includes any one of a physical vapor deposition process, a chemical vapor deposition process, a magnetron sputtering process or an atomic layer deposition process.

19. An interconnection assembly, characterized in that include: a first part to be connected and a second part to be connected; A connecting layer, used to connect the first to-be-connected member and the second to-be-connected member; The connection layer includes a metal layer and a plurality of holes, wherein the plurality of holes are located in the metal layer; Along the direction from the first to-be-connected member to the second to-be-connected member, the distribution density of the holes increases first and then decreases.

20. The interconnect assembly of claim 19, wherein: Along the direction from the first part to be connected to the second part to be connected, the connecting layer includes a fourth interval, a fifth interval and a sixth interval arranged in sequence; the multiple holes are distributed in the fifth interval, and the volume proportion of the holes in the fifth interval is between 5% and 95%.

21. The interconnect assembly of claim 20, wherein: The ratio of the thickness of the fourth interval to the thickness of the connecting layer is between 20% and 40%; the ratio of the thickness of the fifth interval to the thickness of the connecting layer is between 30% and 50%; and the ratio of the thickness of the sixth interval to the thickness of the connecting layer is between 20% and 40%.

22. The interconnection assembly according to any one of claims 19 to 21, characterized in that The thickness of the connecting layer is less than 5 μm.

23. The interconnection assembly according to any one of claims 19 to 22, characterized in that The first component to be connected includes a chip, and the second component to be connected includes a printed circuit board.

24. A method for preparing an interconnection component, characterized in that: include: A connection assembly as claimed in any one of claims 1 to 14 is provided as a first connection assembly and a second connection assembly; the first connection assembly comprises a first member to be connected and a first connection film, the first connection film having a first surface away from the first member to be connected; the second connection assembly comprises a second member to be connected and a second connection film, the second connection film having a second surface away from the second member to be connected; bonding the first surface to the second surface to form a connecting layer; The connection layer is located between the first to-be-connected member and the second to-be-connected member; the connection layer comprises a metal layer and a plurality of holes, and the plurality of holes are located in the metal layer; Along the direction from the first to-be-connected member to the second to-be-connected member, the distribution density of the holes increases first and then decreases.

25. The method for preparing an interconnection assembly according to claim 24, characterized in that: Bonding the first surface and the second surface comprises: Laminating the first surface and the second surface to pre-bond the first surface and the second surface; The first connection film and the second connection film are bonded to form the connection layer.

26. An electronic device, characterized in that: It comprises the interconnection assembly and the housing as described in any one of claims 19 to 23; the interconnection assembly is arranged in the housing.

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