Half-bridge switch assembly

Abstract

The invention relates to a half-bridge switching arrangement having a plurality of half-bridges connected in parallel, each half-bridge having a first semiconductor switching element and a second semiconductor switching element, comprising a plurality of switching cells, each switching cell having a semiconductor switching element and a carrier element, the semiconductor switching elements are arranged on the carrier elements, each switching unit is present as a separate component before being arranged in the half-bridge switching assembly, each semiconductor switching element is configured as one of the first semiconductor switching elements in a first part of the plurality of switching units, and each semiconductor switching element is configured as one of the second semiconductor switching elements in a second part of the plurality of switching units. And in a second portion of the plurality of switching units, each semiconductor switching element is configured as one of the second semiconductor switching elements, respectively; a cooling body, wherein the plurality of switch units are in thermal contact with the cooling body; a first bus, a second bus, and a third bus.

Description

Technical Field

[0001] The invention relates to a half-bridge switch component. Background Art

[0002] Half-bridge switching components can actually be used in converters, for example as inverters or converters for converting between DC voltage and AC voltage. In fact, such half-bridge switching components can be used in power modules in (motor) vehicles to convert the voltage between the DC voltage vehicle power supply and the motor that can be operated with multi-phase AC voltage.

[0003] This half-bridge switch assembly has a half-bridge for each phase, and the half-bridges have a high-side switch and a low-side switch. A single discrete semiconductor switch element can be used as a high-side switch or a low-side switch, such as a single transistor such as a FET, a MOSFET, an IGBT, etc. In addition, each phase can also be connected in parallel with a plurality of half-bridges, each of which has a first discrete semiconductor switch element and a second discrete semiconductor switch element in parallel, wherein the first semiconductor switch elements of the half-bridges connected in parallel form a high-side switch, and the second semiconductor switch elements of the half-bridges connected in parallel form a low-side switch.

[0004] This parallel connection of half-bridges allows high scalability of power and high power or current intensity. However, this usually results in a high DC bus inductance and thus a high total inductance of the commutation loop. And at high currents and high switching frequencies, it is usually difficult to sufficiently cool the half-bridge switching components so that the temperature is maintained at the required value.

[0005] Therefore, there is a need to provide an improved half-bridge switch assembly having a parallel circuit of a single half-bridge. Summary of the invention

[0006] Against this background, a half-bridge switching assembly is proposed having the features of claim 1. Advantageous embodiments are subject matter of the dependent claims and of the description below.

[0007] The half-bridge switch assembly has a plurality of half-bridges connected in parallel, wherein each half-bridge has a first semiconductor switch element and a second semiconductor switch element, respectively. Therefore, the half-bridge switch assembly has a plurality of first semiconductor switch elements and a plurality of second semiconductor switch elements, wherein the number of the respective first semiconductor switch elements and the number of the respective second semiconductor switch elements correspond to the number of half-bridges. The first semiconductor switch elements of the respective half-bridges connected in parallel form a high-side switch, and the second semiconductor switch elements of the half-bridges connected in parallel form a low-side switch. In practice, the individual semiconductor switch elements can be respectively constructed as transistors, for example, FETs, MOSFETs, IGBTs, etc.

[0008] The half-bridge switch assembly has a plurality of switch units or half-bridge modules, wherein each switch unit has a semiconductor switch element and a carrier element, wherein each semiconductor switch element is arranged on each carrier element. In fact, the carrier element can be constructed in a sheet or plane. In the first part of the plurality of switch units, each semiconductor switch element is constructed as one of the first semiconductor switch elements or is used as one of the first semiconductor switch elements. In the second part of the plurality of switch units, each semiconductor switch element is constructed as one of the second semiconductor switch elements or is used as one of the second semiconductor switch elements. Therefore, a plurality of first semiconductor switch elements and second semiconductor switch elements of the half bridge are mounted on a single switch unit. Therefore, for each of the half bridges connected in parallel, two corresponding switch units are provided, or a pair of switch units are used for each half bridge. Each semiconductor switch element of one of the two corresponding switch units is used as one of the first semiconductor switch elements, and each semiconductor switch element of the other of the two switch units is used as one of the second semiconductor switch elements.

[0009] In practice, the half-bridge switch assembly also has a cooling body, which can be cooled by a fluid, for example, the cooling body can have an inlet and an outlet for a corresponding cooling fluid. The cooling fluid may include oil, water, air, etc. A plurality of switch units are in thermal contact with the cooling body. In practice, the carrier elements can be arranged respectively on the cooling body with the side thereof facing away from the semiconductor switch elements.

[0010] The half-bridge switch assembly also has a first busbar, in particular a positive busbar ("B+ busbar"), a second busbar, in particular an output phase busbar, and a third busbar, in particular a negative busbar ("B- busbar"). The first connections of the individual first semiconductor switch elements of the first part of the switch unit (in particular the drain connections of the individual first semiconductor switch elements) are electrically connected to the first busbar or the positive busbar. The second connections of the individual first semiconductor switch elements of the first part of the switch unit (in particular the source connections) and the first connections of the individual second semiconductor switch elements of the second part of the switch unit (in particular the drain connections) are respectively electrically connected to the second busbar or the output phase busbar. The second connections of the individual second semiconductor switch elements of the second part of the switch unit (in particular the source connections) are respectively electrically connected to the third busbar or the negative busbar. The individual busbars can be arranged or mounted on or relative to the cooling body, in particular so that the main extension planes of the individual busbars are respectively parallel or perpendicular to the direction of the main extension plane of the cooling body.

[0011] Each switch unit exists as a separate device before being assembled or arranged in the half-bridge switch assembly or is structurally separated before assembly. Therefore, the switch unit can be prefabricated and then only needs to be assembled with other components to form a half-bridge switch assembly. This greatly simplifies manufacturing. Therefore, the corresponding switch unit is a modular component, which can be combined with each other in a simple, flexible and scalable manner in structure to manufacture, for example, a half-bridge circuit for an inverter phase. The corresponding cooling body is provided and arranged not only for mechanical fixation but also for cooling a single switch unit, thereby cooling a single semiconductor switch element. In fact, each carrier element of a single switch unit can be made of a material with good thermal conductivity or a material with low thermal resistance (for example, made of copper) so that the heat generated by each semiconductor switch element mounted on the carrier element can be well conducted and the heat can be effectively conducted to the cooling body.

[0012] The present invention provides a half-bridge switch component, which has a small or as small as possible DC bus inductance, a small or as small as possible commutation loop inductance, and a small or as small as possible thermal impedance, and the half-bridge switch component can be effectively cooled.

[0013] By connecting the half bridges in parallel with the discrete switching elements, in particular, a high scalability of power can be achieved. The number of semiconductor switching elements or half bridges can be selected accordingly in a manner to achieve the required power or the required current. In addition, by using discrete switching elements, the overall cost of the circuit can be kept low.

[0014] Conventionally, the use of parallel, discrete semiconductor switching elements often results in high parasitic inductances, which can be critical at high switching speeds of wide-bandgap semiconductor elements (WBG), such as SiC or GaN. Such parasitic inductances can be minimized or at least reduced in the switch assembly according to the invention.

[0015] The busbars are advantageously arranged close to one another, whereby the inductive resistance can be reduced or kept as small as possible. In particular, a low DC busbar inductance and a low total inductance of the commutation circuit can thus be achieved. Due to the short distances between the lines or connections of the switching elements and the busbars, the commutation circuit can be optimized. In practice, the busbars can be laminated busbars with very low inductance, which enables the half-bridge to be switched at very high speeds.

[0016] By arranging the cooling body, the busbar can be effectively cooled. In addition, low thermal impedance can be achieved by arranging the semiconductor switching element on the cooling body, and the heat released by the switching element can be effectively transported to the cooling body. In particular, the junction temperature of the switching element can be maintained at a desired value at high current and high switching frequency.

[0017] According to one embodiment, a plurality of switch units are arranged on a first side of a cooling body and on a second side of the cooling body, wherein the first side is particularly opposite to the second side. Therefore, a single switch unit can be distributed on a plurality of sides of the cooling body, and the two sides of the cooling body can be used for direct cooling, especially instant cooling, of directly cooling the semiconductor switching element. In particular, the first part of the switch unit is arranged on the first side of the cooling body, and each of its semiconductor switching elements is used as one of the first semiconductor switching elements. The second part of the switch unit is arranged on the second side of the cooling body, and each of its semiconductor switching elements is used as one of the second semiconductor switching elements. Therefore, all the first semiconductor switching elements are arranged on the first side of the cooling body accordingly, and all the second semiconductor switching elements are arranged on the second side of the cooling body. For example, a single switch unit can be arranged on two sides opposite to each other in pairs, so that the switch unit pairs opposite to each other are used for a half bridge respectively.

[0018] According to one embodiment, one, more or all of the first busbar, the second busbar and the third busbar are arranged on the side of the switch unit on the arranged first side facing away from the first side of the heat sink, and are particularly arranged on the side of the first part of the switch unit facing away from the first side of the heat sink. Alternatively or additionally, one, more or all of the first busbar, the second busbar and the third busbar are arranged on the side of the switch unit on the arranged second side facing away from the second side of the heat sink, and are particularly arranged on the side of the second part of the switch unit facing away from the second side of the heat sink. Therefore, a single busbar can be flexibly arranged relative to the heat sink or relative to the switch unit. In fact, a single busbar can be inserted or pushed into a provided retaining element so as to fix these busbars in a position parallel to the main extension plane of the single switch unit. In addition, these retaining elements can be mechanically connected to the heat sink.

[0019] According to one embodiment, the first busbar or positive busbar and the third busbar or negative busbar are arranged parallel to each other on the side of the switch unit on the arranged first side facing away from the first side of the cooling body, in particular, on the side of the first part of the switch unit facing away from the first side of the cooling body. In particular, the two busbars can be electrically insulated from each other by an electrical busbar insulation layer. Then, the second busbar or output phase busbar is arranged on the side of the switch unit on the arranged second side facing away from the second side of the cooling body, in particular, on the side of the second part of the switch unit facing away from the second side of the cooling body. For example, at least one first retaining element and at least one second retaining element can be provided, the first retaining element is used to fasten the first and third busbars relative to the first side of the cooling body, and the second retaining element is used to fasten the second busbar relative to the second side of the cooling body.

[0020] According to one embodiment, the first busbar, the second busbar and the third busbar are respectively constructed in a sheet shape and arranged relative to the cooling body, so that the main extension planes of the first busbar, the second busbar and the third busbar are respectively parallel to or at least substantially parallel to the direction of the main extension planes of the individual switching units. In fact, the individual busbars can be constructed as copper plates or also manufactured by brazing on metal parts such as copper in the above case. The size and size of the individual busbars can be flexibly and freely selected and can actually be adjusted according to the given structural space. The corresponding individual or all busbars are arranged close to each other relative to the cooling body and the semiconductor switching elements, so that the inductive resistance can be reduced or kept as small as possible. Therefore, low DC bus inductance and low total inductance of the commutation circuit can be achieved in particular. Due to the short distance between the connection of the switching element and the busbar, the commutation circuit can be optimized.

[0021] According to one embodiment, the half-bridge switch assembly further comprises at least one adhesive layer, which is arranged between the cooling body and the individual switch units. In practice, each switch unit may be provided with its own adhesive layer, or a plurality of switch units or all of them may be provided with a common adhesive layer. With the aid of this (these) adhesive layer(s), the individual switch units may be firmly connected or bonded to the cooling body.

[0022] Alternatively or additionally, according to one embodiment, the half-bridge switch assembly has at least one clamping element, which presses one of the switch units against the heat sink. In practice, the individual switch units can each be provided with their own clamping element, wherein the clamping element actually applies pressure to the semiconductor switch element of each switch unit. In addition, in practice, a common clamping element can also be provided for multiple switch units. For example, a first clamping element can be provided for a first side of the heat sink in order to press the switch unit arranged there against the first side, and in practice a second clamping element can be provided for a second side of the heat sink in order to press the switch unit arranged there against the second side. With the help of these clamping elements, the individual switch units can be connected to the heat sink in a forced locking manner, in particular in a manner that can be easily removed again.

[0023] According to one embodiment, each carrier element of each switching unit is made of a ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4). In fact, compared with materials such as plastic, such carrier elements made of ceramic materials are more durable and have a longer service life when exposed to alternating electric fields. The carrier elements may be loaded by high switching frequencies and high edge steepness, especially when using fast-switching semiconductors. The material of the carrier element is a thermal interface material (English: "thermal interface material", TIM) between each semiconductor switching element and the cooling body, and can have a thermal resistance as low as possible or a thermal conductivity as high as possible. As a result, the thermal resistance between the switching element, the carrier element and the cooling body can be reduced, so that heat can be effectively dissipated from the switching element to the cooling body. In fact, a layer composed of a good thermal conductive material (such as a copper layer) can be placed on the back side of each carrier element facing away from the semiconductor switching element in order to further improve heat conduction and heat propagation. According to one embodiment, a first section of the upper side of each carrier element of each switching unit is metallized, and each semiconductor switching element is arranged on the first section. According to one embodiment, the second section of the upper side of the carrier element of each switching unit, on which the semiconductor switching elements are not mounted, is not metallized. The first section made of metallized ceramic can facilitate soldering of the leadframe of the semiconductor switching elements.

[0024] According to one embodiment, the half-bridge switch assembly has at least one decoupling capacitor unit, which in turn has at least one discrete decoupling capacitor element, in particular a plurality of discrete capacitor elements connected in parallel. The design and shape of the half-bridge switch assembly can accordingly provide sufficient space for these decoupling capacitors, thereby reducing the inductance of the commutation loop. In particular, the inductance can be reduced by placing the decoupling capacitor as close as possible to the switching element. Due to the short distance between the line, busbar and decoupling capacitor of the switching element, the commutation loop can be optimized. The position of the decoupling capacitor is easy to achieve during the manufacturing process. In particular, the distance between the decoupling capacitor and the switching element can be as symmetrical as possible.

[0025] According to one embodiment, the half-bridge switch assembly also has a circuit board or a control circuit board or a power circuit board, wherein the circuit board is arranged relative to the cooling body in such a manner that the main extension plane of the circuit board is respectively perpendicular to or at least substantially perpendicular to the direction of the corresponding main extension plane of the single switch unit. Therefore, the circuit board is also respectively perpendicular to or at least substantially perpendicular to the direction of the main extension plane of the first busbar, the second busbar and the third busbar. In particular, the circuit board is arranged on the third side of the cooling body, the third side is respectively perpendicular to or at least substantially perpendicular to the first side and the second side, and the switch unit is arranged on the third side. In particular, at least one third connection of a single semiconductor switch element can be electrically connected to the circuit board respectively. In fact, each semiconductor switch element can have a gate connection and a Kelvin connection (also called a Kelvin source connection or an auxiliary source connection) as at least one third connection. Such a Kelvin source connection can decouple the path of the load current from the path of the control current, thereby improving the switching performance.

[0026] According to one embodiment, at least one capacitor unit is arranged on a side of the printed circuit board facing away from the heat sink. The individual connections of the respective capacitor unit can be electrically connected to the printed circuit board or the printed circuit board layer by means of a soldered connection or a sintered connection.

[0027] According to one embodiment, the half-bridge switch assembly further comprises at least one electrical cooling body insulation layer, through which the cooling body and the circuit board are electrically insulated from each other. Such a corresponding cooling body insulation layer is made of a good thermally conductive material with low thermal resistance so that heat can be effectively conducted from the circuit board to the cooling body.

[0028] According to one embodiment, the first busbar, the second busbar, and the third busbar each have at least one contact element for electrically connecting to a circuit board. For example, the individual contact elements can be respectively configured in a fork shape, a U shape, a V shape, or a Y shape. The individual contact elements can extend from the sheet-like busbars toward the circuit board and be firmly connected to the circuit board there by bonding, in particular by soldering or sintering.

[0029] The circuit board can have a plurality of layers, wherein a single or a plurality of layers are provided respectively, so that the source connection and the drain connection of a single semiconductor switching element are electrically connected to each busbar. For this purpose, the contact elements of the corresponding single busbar can be electrically connected to each circuit board layer, especially by soldering connection or sintering connection. In addition, for this purpose, the connections of the semiconductor switching element can be electrically connected to the corresponding layer of the circuit board, especially by soldering connection or sintering connection. The individual connections of the semiconductor switching element can be respectively configured as pins or pins, which are led out from each semiconductor switching element, especially parallel to its main extension plane. In fact, the individual connections can be respectively contacted with each circuit board layer by means of through-hole assembly or plug assembly (English: "through-hole technology", THT or "pin-in-hole technology", PIH). For this purpose, the corresponding connection pins are suitably passed through the corresponding connection openings, especially the connection openings in the form of holes or drill holes, through the corresponding circuit board layers, and are firmly connected to the corresponding circuit board layers by bonding, especially by soldering connection or sintering connection.

[0030] According to one embodiment, at least one groove is provided in the circuit board or in a single layer or multiple layers of the circuit board for evenly distributing the current through the circuit board and through the single first semiconductor switching element and the single second semiconductor switching element. In practice, the shape, size and position of the single groove in the circuit board or in a single layer of the circuit board can be determined with the aid of an optimization algorithm.

[0031] In particular, the half-bridge switching assembly or the half-bridge power stage can be used in a converter or converter circuit, in fact, in an inverter or converter for alternating conversion of a DC voltage and an AC voltage, wherein a parallel circuit of half bridges can be provided accordingly for one phase of a multi-phase AC voltage. In fact, for this purpose, the first busbar and the third busbar can be electrically connected to a DC voltage connection, and the second busbar can be electrically connected to an AC voltage connection.

[0032] The half-bridge switch assembly is particularly suitable for use in (motor) vehicles to convert the voltage between the DC voltage vehicle power supply and the motor that can operate with a multi-phase AC voltage in a corresponding manner. The required power or current intensity can be achieved by connecting half bridges in parallel, especially in high-power converters in the vehicle field. For this purpose, the first bus and the third bus can be connected to the DC voltage vehicle power supply and the second bus can be connected to one phase of the motor. Therefore, it is particularly possible to set a half-bridge switch assembly or a parallel circuit of a single half bridge thereof for one phase of the motor. The half-bridge switch assembly is then correspondingly a half-bridge for controlling one phase of the motor. Therefore, a corresponding number of half-bridge switch assemblies can be set in the corresponding multi-phase inverter of the (motor) vehicle, for example three half-bridge switch assemblies for a three-phase motor.

[0033] Further advantages and embodiments of the invention are apparent from the description and the accompanying drawings.

[0034] The present invention is schematically illustrated by embodiments in the accompanying drawings, and the present invention will be described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A circuit diagram of an embodiment of a half-bridge switch assembly according to the present invention is schematically shown.

[0036] FIG. 2 schematically shows a switching cell of an exemplary embodiment of a half-bridge switching assembly according to the invention in views a) to c).

[0037] Figure 3 A heat sink having a switching unit in one embodiment of a half-bridge switch assembly according to the present invention is schematically shown.

[0038] FIG. 4 schematically shows an embodiment of a half-bridge switching arrangement according to the invention in views a) and b).

[0039] FIG. 5 schematically shows a circuit board of an embodiment of a half-bridge switching assembly according to the invention in views a) and b). DETAILED DESCRIPTION

[0040] In the figures, the same reference signs denote identical or structurally identical elements.

[0041] exist Figure 1 Schematically showing a circuit diagram of an embodiment of a half-bridge switch component according to the present invention, the half-bridge switch component is represented by 1.

[0042] The half-bridge switching arrangement 1 is provided for rectifying or alternating between a DC voltage connection 3, 4 and an AC voltage connection 2 and has a plurality of half-bridges 5 connected in parallel, each half-bridge having a separate first semiconductor switching element 11 and a separate second semiconductor switching element 21, for example in the form of a metal oxide semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). The first semiconductor switching element 11 of the half-bridges 5 connected in parallel forms a high-side switch 10, while the second semiconductor switching element 21 of the half-bridges 5 connected in parallel forms a low-side switch 20. The number of half-bridges 5 connected in parallel and the number of individual first semiconductor switching elements 11 and second semiconductor switching elements 21 can be selected in accordance with the specific situation in order to achieve a desired power or a desired current.

[0043] The half-bridge switch assembly 1 also has a first busbar or positive busbar 30, a second busbar or output phase busbar 70 and a third busbar or negative busbar 40. The drain connection (first connection) of the first semiconductor switch element 11 is electrically connected to the positive busbar 30, respectively. The source connection (second connection) of the first semiconductor switch element 11 is electrically connected to the output phase busbar 70, respectively. In addition, the drain connection (first connection) of the single second semiconductor switch element 21 is also electrically connected to the output phase busbar 70, respectively. The source connection (second connection) of the second semiconductor switch element 21 is electrically connected to the negative busbar 40, respectively.

[0044] Furthermore, a plurality of decoupling capacitors 50 are provided, wherein each decoupling capacitor element 51 is connected in parallel with one of the half bridges 5 .

[0045] In practice, the assembly 1 can be used in a (motor) vehicle. For example, the DC voltage connections 3, 4 in the assembly 1 can be connected to a DC voltage vehicle power supply, while one phase of the motor can be connected to the AC voltage connection 2. The motor can be a multi-phase machine, in practice usually three or more phases. In particular, for each phase, there is provided a Figure 1 The half-bridge switch assembly shown has a plurality of half-bridges 5 connected in parallel. In addition, a control unit for triggering individual switching elements 11, 21 can be provided, wherein the control unit can trigger the gate connection of the switching elements 11, 21 according to the specific situation to achieve current rectification or alternation.

[0046] The individual half-bridges 5 and their respective first semiconductor switching elements 11 and their respective second semiconductor switching elements 21 are each produced by means of a switching unit or a half-bridge module, as will be explained below with reference to FIG. 2 .

[0047] According to one embodiment of the present invention, Figure 2a and Figure 2b Schematically showing a switch unit for a half-bridge switch assembly, the switch unit is denoted by 100 .

[0048] The switching unit 100 has a semiconductor switching element 101 and a carrier element 106, wherein the semiconductor switching element 101 is arranged on the carrier element 106. The carrier element 106 is actually formed in a sheet-like or planar manner and is made of a material with good thermal conductivity and low thermal resistance, and is particularly preferably made of a ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4). The ceramic carrier element 106 also plays an electrical insulating role for the semiconductor switching element 101.

[0049] The individual connections 102 of the semiconductor switching element 101 , namely the drain connection and the source connection as well as the gate connection and the Kelvin connection, are in fact each designed as a pin or a pin which leads out of the semiconductor switching element 101 parallel to its main extension plane.

[0050] A layer 105 of a material with good thermal conductivity, in particular a copper layer 105 , is applied to the back side of the carrier element 106 facing away from the semiconductor switching element 101 and serves for heat conduction and heat dissipation.

[0051] exist Figure 2c Schematically shown in FIG. 1 is a carrier element 106 of a switching unit 100 . Figure 2c The top view of the upper side of the carrier element 106 is shown, on which the semiconductor switching element 101 is arranged. A first section 107 of the upper side of the ceramic carrier element 106 is a metallized section, for example with silver, on which the semiconductor switching element 101 lies. A second section 108 of the upper side of the ceramic carrier element 106 is not metallized, on which the semiconductor switching element 101 does not lie. The first section 107 made of metallized ceramic can simplify the soldering of the leadframe of the semiconductor switching element 101.

[0052] Before assembly or arrangement, each of the plurality of such switch units 100 in the half-bridge switch assembly exists as an independent device or is structurally separated before assembly. Depending on how the terminals 102 of the semiconductor switch elements 101 of such switch units 100 are connected to the busbar in the half-bridge switch assembly, each semiconductor switch element 101 is used as one of the first semiconductor switch elements or one of the second semiconductor switch elements.

[0053] A plurality of switch units 100 in a half-bridge switch assembly may be arranged on a cooling body. Figure 3 To elaborate.

[0054] According to one embodiment of the present invention, Figure 3 Schematically shown in FIG. 8 is a cooling body for a half-bridge switch assembly, and the cooling body is denoted by 280 .

[0055] like Figure 3 As shown, a plurality of switch units 100 are arranged on the heat sink 280 .

[0056] The first part 100' of the switch unit 100 is arranged at the first side 281 of the cooling body 280, and the second part 100" of the switch unit 100 is arranged at the second side 282 of the cooling body 280 opposite to the first side 281. In fact, each semiconductor switching element 101 of the first part 100' of the switch unit 100 is respectively used as one of the first semiconductor switching elements 110. Each semiconductor switching element 101 of the second part 100" of the switch unit is respectively used as one of the second semiconductor switching elements 120.

[0057] In the example shown, there are five first parts 100 ′ and five second parts 100 ″ of the switch unit 100 , respectively, so that the half-bridge switch assembly has five half bridges connected in parallel. In practice, the switch units 100 arranged opposite each other in pairs on the heat sink 280 can each be used for one half bridge 150 .

[0058] In practice, however, the number of switching units 100 and the number of half-bridges connected in parallel can also be greater or less, depending in particular on the required power or the required current, which is the sum of the current flowing through the semiconductor switching elements. The switching units 100 are modular components that can be combined with one another in a structurally simple, flexible and scalable manner to produce a half-bridge switch assembly for an inverter phase.

[0059] In order to fix the individual switching units 100 on the respective side faces 281 or 282 of the cooling body 280, clamping elements 286 can be provided so as to press the individual switching units 100 against the respective side faces 281 or 282 of the cooling body 280. In practice, the first clamping element 286 can be provided for pressing the first part 100' of the switching unit 100 against the first side face 281, and the second clamping element 286 can be provided for pressing the second part 100" of the switching unit 100 against the second side face 282. In practice, the individual clamping elements 286 can each be made of spring steel or the like and be fastened to the cooling body 280 by means of fixing means 287 (e.g. screws) respectively. In addition, a layer 285 made of a thermal material or a material with good thermal conductivity is provided on the side faces 281 or 282 of the cooling body 280 respectively.

[0060] Individual busbars can be arranged on the assembly consisting of the heat sink 280 and the switching unit 100 , as will be explained below with reference to a number of views a) and b) in FIG. 4 .

[0061] exist Figure 4a In the drawing, an embodiment of a half-bridge switch assembly according to the present invention is shown in a perspective exploded view and is denoted by 200 . Figure 4b A perspective view of the half-bridge switch assembly 200 in an assembled state is shown.

[0062] The positive busbar 230, the negative busbar 240 and the output phase busbar 270 are each constructed in a sheet-like manner and arranged relative to the cooling body 280 so that the main extension planes of these busbars 230, 240 and 270 are respectively (at least substantially) parallel to the direction of the main extension planes of the individual switching units 100.

[0063] In practice, the positive busbar 230 and the negative busbar 240 are arranged parallel to each other on a side of the first part 100' of the switch unit 100 facing away from the first side 281 of the cooling body 280. In practice, the output phase busbar 270 is arranged on a side of the second part 100" of the switch unit 100 facing away from the second side 282 of the cooling body 280. An electrical busbar insulation layer 295 is arranged between the positive busbar 230 and the negative busbar 240 parallel to these busbars, by which the two busbars 230, 240 are electrically insulated from each other.

[0064] The positive busbar 230 has an electrical connection 235 for electrically connecting to a positive DC voltage connection, and the negative busbar 240 has an electrical connection 245 for electrically connecting to a negative DC voltage connection. The output phase busbar 270 has an electrical connection 275 for electrically connecting to one or more AC voltage connections. In addition, the positive busbar 230, the negative busbar 240, and the output phase busbar 270 each have a plurality of contact elements 231, 241, and 271 for electrically connecting to a circuit board 260.

[0065] The half-bridge switch assembly 200 further has a circuit board 260, which is arranged relative to the cooling body 280, so that the main extension plane of the circuit board 260 is oriented (at least substantially) perpendicular to the main extension planes of the single switch unit 100 and is also perpendicular to the main extension plane directions of the positive bus 230, the negative bus 240 and the output phase bus 270. In fact, the circuit board 260 is arranged at the third side surface 283 of the cooling body, and the third side surface is vertically connected to the first side surface and the second side surface 282, respectively, and the switch unit 100 is arranged on the first side surface and the second side surface. In fact, the circuit board 260 can be mechanically connected to the cooling body 280 on the third side surface by means of a fixing mechanism 265 (such as a screw).

[0066] An electrical cooling body insulation layer 291 is arranged between the cooling body 280 and the circuit board 260, by which the cooling body 280 and the circuit board 260 are electrically insulated from each other. In addition, a layer 290 is arranged between the cooling body 280 and the circuit board 260 as a gap filler. In particular, both the cooling body insulation layer 291 and the layer 290 are made of a good thermally conductive material with low thermal resistance, so that heat can be conducted from the circuit board 260 to the cooling body 280.

[0067] The half-bridge switch assembly 200 further comprises a plurality of decoupling capacitor units 250, which are respectively arranged on a side of the circuit board 260 facing away from the cooling body 280. Each of these capacitor units 250 comprises at least one discrete decoupling capacitor element. In particular, these capacitor units 250 or a single capacitor element thereof form a low-resistance path to reduce the loop inductance of the semiconductor switch element.

[0068] In the example shown, five parallel-connected decoupling capacitors are provided, but the number of decoupling capacitors can also be greater. In particular, the size of the decoupling capacitor can depend on a number of factors, for example, on the inductance of the commutation circuit, the switching speed and the degree of voltage overshoot that can be permitted during switching. The number of decoupling capacitors can vary depending on the application. The decoupling capacitors are very close to the half bridge, which reduces the inductance of the commutation circuit.

[0069] Furthermore, the circuit board 260 may have a gate driver 261 for a gate connection of a single semiconductor switching element. In addition, a board connection 262 for connecting to one or more other circuit boards may be provided on the circuit board 260, for example, for logic touch control of a single semiconductor switching element.

[0070] If there is insufficient space on the circuit board 260 due to air gaps or creepage distances, the gate driver 261 can actually be arranged on another circuit board (e.g., above the circuit board 260). In the case where two circuit boards are arranged in an overlapping manner, in practice, the board connection portion and the decoupling capacitor are arranged on the first of the two circuit boards, especially on the lower circuit board. The gate driver 261 can be arranged on another circuit board, especially on the upper circuit board. The upper circuit board can actually be set as a gate driver board.

[0071] The circuit board 260 may have a plurality of layers, wherein a single or a plurality of the circuit board layers are respectively provided for electrically connecting the source connection and the drain connection of a single first semiconductor switching element 110 and a second semiconductor switching element 120 to each busbar 230, 240 and 270. For this purpose, the corresponding connections of the first semiconductor switching element 110 and the second semiconductor switching element 120 and the contact elements 231, 241, 271 of the busbars 230, 240, 270 are respectively electrically connected to one or more corresponding circuit board layers, in particular, they are electrically connected by means of soldering connection or sintering connection, which will be explained below based on the multiple views a) and b) in FIG. 5 .

[0072] exist Figure 5a The circuit board 260 is schematically shown in FIG. Figure 5a As shown in , the circuit board has multiple overlapping solder layers or layers, wherein layer 310 is actually respectively configured for connection to the positive bus 230, wherein layer 320 is respectively configured for connection to the negative bus 240, and wherein layer 330 is respectively configured for connection to the output phase bus 270.

[0073] exist Figure 5b In the diagram, each of the layers 310 , 320 , and 330 of the circuit board 260 is shown separately from one another in a schematic top view.

[0074] like Figure 5b As shown, such a circuit board layer 310 for connection to the positive busbar 230 has a connection point 311 for the contact element 231 of the positive busbar 230, a connection point 312 for the first connection or drain connection of the first semiconductor switching element 110, and a connection point 313 for the decoupling capacitor unit 250.

[0075] The circuit board layer 320 for connection to the negative busbar 240 has a connection point 321 for the contact element 241 of the negative busbar 240 , a connection point 322 for the second connection and the source connection of the second semiconductor switching element 120 , and a connection point 323 for the decoupling capacitor unit 250 .

[0076] The circuit board layer 330 for connecting to the output phase bus 270 has a connection point 331 for the contact element 271 of the output phase bus 270, a connection point 332 for the second connection or source connection of the first semiconductor switching element 110, and a connection point 333 for the first connection or drain connection of the second semiconductor switching element 120.

[0077] Furthermore, a plurality of recesses 315 , 325 , or 335 are provided in each of the individual circuit board layers 310 , 320 , or 330 , for example each recess is in the form of a hole or a bore.

[0078] These grooves 315, 325, 335 can be arranged to achieve uniform distribution of current through the circuit board layers 310, 320, 330 and through the individual first semiconductor switch elements 110 and second semiconductor switch elements 120. In practice, the number, position and size of these grooves 315, 325, 335 in the circuit board layers 310, 320, 330 can be determined by means of measurements and optimization algorithms, for example, during the development, manufacture or commissioning of the half-bridge switch assembly 200.

[0079] Reference numerals list

[0080] 1 Half-bridge switch components

[0081] 2 AC voltage connector

[0082] 3 DC voltage connector

[0083] 4 DC voltage connector

[0084] 5 Half Bridge

[0085] 10 High-side switch

[0086] 11. First semiconductor switching element

[0087] 20 Low-side switch

[0088] 21 Second semiconductor switch element

[0089] 30 positive bus

[0090] 40 Negative bus

[0091] 50 Decoupling capacitor

[0092] 51 Decoupling capacitor element

[0093] 70 Output phase bus

[0094] 100 Switching Units

[0095] 100' Switch Unit Part 1

[0096] 100" switch unit part 2

[0097] 101 Semiconductor switching element

[0098] 102 Connectors for semiconductor switching elements

[0099] 105 Copper layer

[0100] 106 carrier element

[0101] 107 Metallized section of the top side of the carrier element

[0102] 108 Non-metallized section of the top side of the carrier element

[0103] 110 first semiconductor switch element

[0104] 120 second semiconductor switch element

[0105] 150 Half Bridge

[0106] 200 Half-bridge switch assembly

[0107] 230 first busbar, positive busbar

[0108] 231 Contact element

[0109] 235 Electrical connector

[0110] 240 Third bus, negative bus

[0111] 241 Contact element

[0112] 245 Electrical connector

[0113] 250 Decoupling capacitor units

[0114] 260 Circuit Board

[0115] 261 Gate Driver

[0116] 262 Plate connection

[0117] 265Fixing mechanism, screws

[0118] 270 Second bus, output phase bus

[0119] 271 Contact elements

[0120] 275 Electrical connector

[0121] 280 cooling body

[0122] 281 first side of cooling body

[0123] 282 Second side of cooling body

[0124] 283 The third side of the cooling body

[0125] 285 Layer made of good thermal conductive material

[0126] 286 Clamping element

[0127] 287Fixing mechanism, screws

[0128] 290 Layer as gap filler or spacer

[0129] 291 Electrical cooling body insulation layer

[0130] 295 Busbar insulation layer

[0131] 310 Circuit board layer used for connection with positive busbar

[0132] 311 Connection point for contact element of positive busbar

[0133] 312 connection point for the drain connection of the first semiconductor switching element

[0134] 313 Connection point for capacitor

[0135] 315 Groove

[0136] 320 Circuit board layer for connection to negative busbar

[0137] 321 Connection point for contact element of negative busbar

[0138] 322 connection point for source connection of second semiconductor switching element

[0139] 323 Connection point for capacitor

[0140] 325 Groove

[0141] 330 Circuit board layer for connection with output phase bus

[0142] 331 Connection point for contact element of output phase busbar

[0143] 332 connection point for source connection of first semiconductor switching element

[0144] 333 Connection point for drain connection of second semiconductor switching element

[0145] 335 groove

Claims

1. A half-bridge switch assembly (1, 200), the half-bridge switch assembly having a plurality of half-bridges (5, 150) connected in parallel, wherein each half-bridge (5, 150) has a first semiconductor switch element (11, 110) and a second semiconductor switch element (21, 120), the half-bridge switch assembly comprising: A plurality of switch units (100), wherein each switch unit has a semiconductor switch element (101) and a carrier element (106), wherein each semiconductor switch element (101) is arranged on each carrier element (106), wherein each switch unit (100) is present as a separate device before being arranged in a half-bridge switch assembly (1, 200), wherein in a first part (100') of the plurality of switch units (100), each semiconductor switch element (101) is configured as one of the first semiconductor switch elements (11, 110), and in a second part (100") of the plurality of switch units (100), each semiconductor switch element (101) is configured as one of the second semiconductor switch elements (21, 120); A cooling body (280), wherein the plurality of switch units (100) are in thermal contact with the cooling body (280); A first busbar (30, 230), to which first connections of individual first semiconductor switch elements (11, 110) of the first part (101') of the switch unit (100) are respectively electrically connected; A second busbar (70, 270), the second connections of the individual first semiconductor switch elements (11, 110) of the first part (101') of the switch unit (100) being electrically connected to the second busbar, and the first connections of the individual second semiconductor switch elements (21, 120) of the second part (101") of the switch unit (100) being electrically connected to the second busbar; A third busbar (40, 240) is electrically connected to the second terminals of the individual second semiconductor switch elements (21, 120) of the second part (101") of the switch unit (100).

2. The half-bridge switch assembly (1, 200) according to claim 1, wherein: The plurality of switch units (100) are arranged on a first side surface (281) of the cooling body (280) and on a second side surface (282) of the cooling body (280), wherein in particular a first part (101') of the switch unit (100) is arranged on the first side surface (281) of the cooling body (280), and wherein in particular a second part (101") of the switch unit (100) is arranged on the second side surface (282) of the cooling body (280).

3. The half-bridge switch assembly (1, 200) according to claim 2, wherein: One, more or all of the first busbar (230), the second busbar (270) and the third busbar (240) are arranged on a side of the switch unit (100) on the first side (281) facing away from the first side (281) of the cooling body (280), in particular, on a side of the first part (100') of the switch unit (100) facing away from the first side (281) of the cooling body (280), and / or, wherein, One, more or all of the first busbar (230), the second busbar (270) and the third busbar (240) are arranged on the side of the switch unit (100) on the second side (282) facing away from the second side (282) of the cooling body (280), and in particular are arranged on the side of the switch unit (100) of the second part (100") facing away from the second side (282) of the cooling body (280).

4. The half-bridge switch assembly (1, 200) according to claim 3, wherein: The first busbar (230) and the third busbar (240) are arranged parallel to each other on a side of the switch unit (100) on the first side (281) facing away from the first side (281) of the cooling body (280), in particular, on a side of the first part (100') of the switch unit (100) facing away from the first side (281) of the cooling body (280), and the second busbar (270) is arranged on a side of the switch unit (100) on the second side (282) facing away from the second side (282) of the cooling body (280), in particular, on a side of the second part (100') of the switch unit (100) facing away from the second side (282) of the cooling body (280).

5. The half-bridge switch assembly (1, 200) according to any one of the preceding claims, wherein: The first busbar (230), the second busbar (270) and the third busbar (240) are respectively constructed in a sheet-like manner, and are arranged relative to the cooling body (280) in such a way that the main extension planes of the first busbar (230), the second busbar (270) and the third busbar (240) are respectively parallel to or at least substantially parallel to the main extension plane directions of the single switch unit (100).

6. The half-bridge switch assembly (1, 200) according to any one of the preceding claims, further comprising: at least one adhesive layer, the adhesive layer being arranged between the cooling body (280) and the single switch unit (100), respectively, and / or further comprising: At least one clamping element (286) which in each case presses at least one of the switching units (100) against the heat sink (280).

7. The half-bridge switch assembly (1, 200) according to any one of the preceding claims, wherein: The respective carrier elements (106) of each switching unit (100) are respectively made of a ceramic material.

8. The half-bridge switch assembly (1, 200) according to claim 7, wherein: A first section (107) of the top side of the carrier element (106) of each switching unit (100) is metallized, on which the semiconductor switching elements (101) are mounted.

9. The half-bridge switch assembly (1, 200) according to claim 8, wherein: A second section (108) of the top side of the carrier element (106) of each switching unit (100) is not metallized and the semiconductor switching elements (101) are not mounted on said second section.

10. The half-bridge switch assembly (1, 200) according to any one of the preceding claims, further comprising: At least one decoupling capacitor unit (50, 250), each of the decoupling capacitor units comprising at least one decoupling capacitor element.

11. The half-bridge switch assembly (1, 200) according to any one of the preceding claims, further comprising: A circuit board (260), wherein the circuit board (260) is arranged relative to the cooling body (280) in such a way that a main extension plane of the circuit board (260) is respectively perpendicular or at least substantially perpendicular to the direction of each main extension plane of a single switch unit (100).

12. The half-bridge switch assembly (1, 200) according to claim 10 and 11, wherein: The at least one capacitor unit (50, 250) is arranged on a side of the printed circuit board (260) facing away from the heat sink (280).

13. The half-bridge switch assembly (1, 200) according to claim 11 or 12, further comprising at least one electrical cooling body insulation layer (291), by which the cooling body (280) and the circuit board (260) are electrically insulated from each other.

14. The half-bridge switch assembly (1, 200) according to any one of claims 11 to 13, wherein: The first busbar (230), the second busbar (270) and the third busbar (240) respectively have at least one contact element (231, 241, 271) for electrically connecting to the circuit board (260).

15. The half-bridge switch assembly (1, 200) according to any one of claims 11 to 14, wherein: At least one groove (315, 325, 335) is arranged in the circuit board (260) or in a single layer or multiple layers (310, 320, 330) of the circuit board (260) so as to evenly distribute the current passing through the circuit board (260) and through the single first semiconductor switch element (110) and the single second semiconductor switch element (120).

Images