Half-bridge switch structure

Abstract

The invention relates to a half-bridge switching arrangement (100) having a plurality of half-bridges connected in parallel, each half-bridge having a first semiconductor switching element (111) and a second semiconductor switching element (121), having a first bus bar (130), a second bus bar (170) and a third bus bar, the first connection portions of the first semiconductor switching elements (111) are electrically connected to a first bus bar, the second connection portions of the first semiconductor switching elements (111) and the first connection portions of the second semiconductor switching elements (121) are electrically connected to a second bus bar, and the second connection portions of the second semiconductor switching elements (121) are electrically connected to a third bus bar. The first and second busbars are toothed, and the semiconductor switching elements are arranged on teeth (132, 172) in which the teeth are alternately arranged. The third bus bar is arranged above the semiconductor switching elements (111, 121), and the cooling body is arranged below the first bus bar and the second bus bar.

Description

Technical Field

[0001] The invention relates to a half-bridge switch structure. Background Art

[0002] Half-bridge switching structures can be used, for example, in rectifiers, for example as inverse rectifiers or inverters for converting between direct current voltage and alternating current voltage. For example, such half-bridge switching structures can be used in power modules in (motor) vehicles in order to convert voltage between a direct current electrical system and an electric machine which can be operated with a multiphase alternating current voltage.

[0003] Such a half-bridge switch structure has one half-bridge per phase, each half-bridge having a high-side switch and a low-side switch. Individual, discrete semiconductor switching elements can be used as high-side or low-side switches, respectively, such as individual transistors, such as FETs, MOSFETs, IGBTs, etc. In addition, a large number of such half-bridges, each having a first discrete semiconductor switching element and a second discrete semiconductor switching element, can also be connected in parallel per phase, wherein the first semiconductor switching elements of these parallel-connected half-bridges form the high-side switch, and wherein the second semiconductor switching elements of these parallel-connected half-bridges form the low-side switch.

[0004] By means of such a parallel connection of half-bridges, a high level of performance scalability as well as high power or current intensities can be achieved. However, this usually results in a high intermediate circuit inductance and thus a high total inductance of the commutation loop. It also often proves difficult to sufficiently cool such half-bridge switching structures in order to maintain the temperature at the desired value at high currents and high switching frequencies.

[0005] Therefore, it is desirable to provide an improved half-bridge switch structure having individual half-bridges connected in parallel. Summary of the invention

[0006] Against this background, a half-bridge switching structure is proposed having the features of claim 1. Advantageous developments are the subject matter of the dependent claims and the following description.

[0007] The half-bridge switch structure has a plurality of half-bridges connected in parallel, wherein each half-bridge has a first semiconductor switch element and a second semiconductor switch element. Thus, the half-bridge switch structure has a plurality of first semiconductor switch elements and a plurality of second semiconductor switch elements, wherein the number of first semiconductor switch elements and the number of second semiconductor switch elements advantageously correspond to the number of half-bridges. The first semiconductor switch elements of the half-bridges connected in parallel advantageously form a high-side switch, and the second semiconductor switch elements of the half-bridges connected in parallel form a low-side switch. The individual semiconductor switch elements can each be designed, for example, as a transistor, such as a FET, a MOSFET, an IGBT, etc.

[0008] In addition, the half-bridge switch structure has a first busbar, a second busbar and a third busbar. For example, these busbars can all be made of copper or contain copper. The first connection (e.g., drain connection) of the first semiconductor switch element is electrically connected to the first busbar, respectively. The second connection (e.g., source connection) of the first semiconductor switch element is electrically connected to the second busbar, respectively. In addition, the first connection (e.g., drain connection) of the second semiconductor switch element is electrically connected to the second busbar, respectively. The second connection (e.g., source connection) of the second semiconductor switch element is electrically connected to the third busbar, respectively. In this sense, the first and third busbars form an intermediate circuit connection, and the second busbar forms a center tap.

[0009] The second busbar can be set as an output phase busbar, for example. The first busbar can be set as a positive busbar ("B+ busbar") or a negative busbar ("B- busbar"), for example. Then the third busbar can be set as another busbar selected from the positive busbar and the negative busbar.

[0010] The half-bridge switch structure also has a cooling body, which is advantageously provided and arranged for cooling the busbar and the semiconductor switch elements. For example, the cooling body can be fluid-cooled and have an inlet and an outlet for a corresponding cooling fluid. The cooling fluid can include oil, water, air, etc.

[0011] The first busbar has a first section and a plurality of second sections, wherein the second sections of the first busbar are adjacent to the first section of the first busbar, thereby providing gaps between the respective second sections of the first busbar. In particular, the first busbar is therefore designed in a comb shape, wherein the first section forms the comb back and the second sections form the comb teeth or comb tip teeth. The first section is particularly plate-shaped or flat or has a straight cross section. The respective second sections are also particularly plate-shaped, and each second section is adjacent to the side, side surface or edge of the first section at a predetermined, particularly equidistant distance from each other. The respective second sections advantageously have the same shape and size. The gaps between the second sections also have the same shape and size. Starting from the corresponding side or edge of the first section, the second section is therefore adjacent to the first section, particularly as a protrusion or tooth.

[0012] Each of the plurality of first semiconductor switching elements is arranged on each of the second sections of the first busbar, in particular on the surface or top side of the corresponding second section. Therefore, all first semiconductor switching elements are advantageously arranged on the same side of the second section of the first busbar.

[0013] Corresponding to the first busbar, the second busbar also has a first, in particular plate-shaped section and a plurality of, in particular, plate-shaped second sections, wherein the second sections of the second busbar in particular adjoin the first section of the second busbar equidistantly from one another, so that gaps are provided between the individual second sections of the second busbar. The shapes and sizes of the second sections and the gaps advantageously correspond to one another. The second busbar is therefore also in particular comb-shaped, wherein the first section forms the comb back and the second sections form the comb teeth. The individual second sections of the second busbar extend from the side, side surface or edge of the corresponding first section, in particular as projections or teeth.

[0014] One of the plurality of second semiconductor switching elements is respectively arranged on each second section of the second busbar, in particular on the surface or top side of the corresponding second section. Specifically, all second semiconductor switching elements are arranged on the same side of the second busbar on the corresponding second section.

[0015] The first busbar and the second busbar are arranged relative to each other so that the second section of the second busbar is arranged in the gap between the second sections of the first busbar in the projection of the first busbar on the main extension plane, and the second sections of the first busbar are respectively arranged in the gap between the second sections of the second busbar in the projection of the second busbar on the main extension plane.

[0016] The second section of the second busbar is thus particularly arranged above, within or below one of the gaps between the second sections of the first busbars. The second section of the positive busbar is thus particularly arranged below, within or above one of the gaps between the second sections of the second busbars.

[0017] The first section of the first busbar and the first section of the second busbar are advantageously arranged parallel to one another. In particular, all second sections and the main extension planes of the respective first and second semiconductor switching elements are therefore also arranged parallel to one another.

[0018] For example, the respective first sections and the respective second sections of the first busbar and the second busbar may each be arranged in the same plane, such that the second section of the second busbar is arranged within the gap of the first busbar, and vice versa.

[0019] For example, the first section of the first busbar can be arranged above the first section of the second busbar or at least slightly offset upward when viewed along the (height) direction perpendicular to the main extension plane of the first section, so that the second section of the positive busbar is located above the gap of the second busbar or at least slightly offset upward when viewed in the height direction, or correspondingly, the second section of the second busbar is located below the gap of the first busbar or at least slightly offset downward when viewed in the height direction.

[0020] Conversely, when viewed in the height direction, the first section of the first busbar may also be arranged below the first section of the second busbar or at least slightly offset downwards. In this case, viewed in the height direction, the second section of the first busbar is arranged below the gap of the second busbar or at least slightly offset downwards, and correspondingly, viewed in the height direction, the second section of the second busbar is arranged above the gap of the first busbar or at least slightly offset upwards.

[0021] Thus, the respective second sections of the first and second generatrix as projections or teeth each advantageously engage in the gap of the other generatrix as a receptacle of a tooth, either directly in the same plane perpendicular to the height direction or offset from one another as viewed in the height direction.

[0022] The third busbar is arranged on a first side of the structure consisting of the first busbar and the second busbar, comprising the first semiconductor switching element and the second semiconductor switching element (i.e. on the same side as the semiconductor switching element). The cooling body is arranged on a second side of the structure consisting of the first busbar and the second busbar, opposite to the first side (i.e. on the other side). The third busbar advantageously has a first section, in particular in the form of a plate. The main extension plane of the third busbar or the first section of the third busbar and the respective first section and the respective second section of the first busbar and the second busbar are arranged in particular parallel to each other.

[0023] The outer surface of each first and second semiconductor switch element is in thermal contact with the first busbar and the second busbar, respectively. Each busbar is in thermal contact with the cooling body (on the other side). This means that the heat from each switch element and each busbar can be effectively transferred to the cooling body and dissipated therefrom. The busbar can advantageously act as a thermal conductor to improve the overall thermal resistance. The special (comb-like) shape of the first busbar and the third busbar can facilitate the connection of each semiconductor switch element to the corresponding busbar and improve the conductivity and heat transfer from the switch element to the cooling body.

[0024] The present invention provides a half-bridge switching structure with a low or as low as possible intermediate circuit inductance, a low or as low as possible commutation loop inductance and a low or as low as possible thermal impedance, which can be effectively cooled.

[0025] By connecting half-bridges in parallel with discrete switching elements, a high level of performance scalability can be achieved. The number of semiconductor switching elements or half-bridges can be advantageously selected so as to achieve a desired power or a desired current. Furthermore, the overall cost of the circuit can be kept low by using discrete switching elements.

[0026] Conventionally, the use of parallel, discrete semiconductor switching elements often results in high parasitic inductances, which can be critical, for example, in the case of high switching speeds of WBG elements (wide-bandgap semiconductors, English: "wide-bandgap semiconductors" (WBG)), such as SiC or GaN. In the switch structure according to the invention, this parasitic inductance can be minimized or at least reduced.

[0027] The busbars are advantageously arranged close to one another, whereby the inductive resistance can be reduced or kept as low as possible. In particular, a low intermediate circuit inductance and a low total inductance of the commutation loop can be achieved. Due to the short distances between the switching elements and the lines or interfaces of the busbars, the communication loop can be optimized. The busbars can be, for example, laminated busbars with very low inductance, which enables the half-bridge to switch at very high speeds.

[0028] The busbar can be effectively cooled by providing a cooling body. In addition, by providing the semiconductor switching element on the busbar, low thermal resistance can be achieved, and the heat released by the switching element can be effectively transferred to the cooling body. Although the proximity of the busbars to each other affects the overall inductance of the commutation loop, the busbar and the switching element can still be effectively cooled. In particular, the junction temperature of the switching element can be maintained at a desired value at high current and high switching frequency.

[0029] For example, instead of using circuit board layers to make the busbars, copper sheets can be used, which are easy to bend and shape and are cheaper than thick copper circuit boards. Furthermore, the busbars can also be produced, for example, by soldering to metal sheets such as copper. The size and dimensions of the busbars can be selected flexibly and freely and, for example, adapted to a given installation space.

[0030] According to one embodiment, the second busbar has a plurality of contacts, wherein the contacts are adjacent to the first section of the second busbar. Each of the contacts of the second busbar is electrically connected to a corresponding second connection portion of the first semiconductor switching element, for example, to a corresponding source connection portion. In particular, each second connection portion of the first switching element is materially connected to a corresponding contact of the second busbar, for example, by a welding connection or a sintering connection. The contacts are advantageously adjacent to each other at a predetermined, equidistant distance on a side or edge of the first section of the second busbar, on which the corresponding second section is also provided. One of the contacts is advantageously arranged in one of the gaps in the second busbar, respectively. Advantageously, the contacts extend perpendicularly to the first section of the second busbar, respectively.

[0031] These contacts of the second busbar are advantageously designed in an S-shaped or Z-shaped manner, in particular when viewed in a side view of the output phase busbar. The first contact section of these individual S-shaped or Z-shaped contacts is advantageously vertically or at least substantially vertically adjacent to the first section of the second busbar, in particular in one of the corresponding gaps between the corresponding second sections. The second contact section is particularly vertically or at least substantially vertically adjacent to each of these first contact sections, and the second contact section particularly extends parallel to the first section of the second busbar. The third contact section is particularly vertically or at least substantially vertically adjacent to the corresponding second contact section, and the third contact section is particularly parallel to the corresponding first contact section and extends perpendicularly to the first section and the second section of the second busbar. In particular, the third contact section is used to contact the corresponding second connection portion of the corresponding first semiconductor switching element. For this purpose, each third contact section can be connected to the corresponding second connection portion, in particular by material matching connection (in particular welding or sintering connection).

[0032] According to one embodiment, the respective second connection of the first semiconductor switching element is bent or folded to be connected to the respective contact of the second busbar, respectively. In particular, the respective second connection is designed as a pin or a pin or a wire, which is led out of the respective first semiconductor switching element, in particular parallel to its main extension plane, and then bent or folded accordingly, in particular at 90° or at least substantially at 90° relative to the main extension plane. The respective bent or folded section of the respective second connection is in particular electrically connected to the respective third contact section of the second busbar, in particular an S-shaped or Z-shaped contact, for example by welding or sintering.

[0033] According to one embodiment, the third busbar has a first section and a plurality of contacts, wherein the contacts are adjacent to the first section of the third busbar. Each of the contacts of the third busbar is electrically connected to a corresponding second connection of the second semiconductor switching element, for example, to a corresponding source connection. In particular, each second connection or source connection of the second switching element is connected to a corresponding contact of the third busbar in a material-fitting manner, for example, by welding or sintering. The first section of the third busbar is in particular plate-shaped and arranged parallel to the corresponding first section and the corresponding second section of the first and second busbars. The contact of the third busbar is in particular adjacent to a first side or edge of the first section of the third busbar.

[0034] These contacts of the third busbar are advantageously designed as forks, U-shaped, V-shaped or Y-shaped, in particular when viewed in a top view of the third busbar. The first contact section of each fork-shaped or Y-shaped contact advantageously adjoins the first section of the third busbar and in particular extends parallel to the first section or extends in the same plane as the first section. When viewed in a plan view, the corresponding first contact section is in particular adjacent to a U-shaped or V-shaped second contact section. The second contact section in particular has a leg extending parallel to the first section or in the same plane as the first section. The second contact section is used to make contact with the corresponding second connection portion or source connection portion of the corresponding second semiconductor switching element, wherein these individual second contact sections can be connected to the corresponding second connection portion, for example, in a material-matched manner, for example, by welding or sintering.

[0035] According to one embodiment, the respective second connection of the second semiconductor switching element is bent or folded respectively to connect to the respective contact of the third busbar. The respective second connection is advantageously provided as a pin, which leads out from the respective second semiconductor switching element parallel to the main extension plane and is then accordingly bent or folded relative to the main extension plane, in particular at 90° or at least substantially at 90°. This bent or folded section of the respective second connection is advantageously electrically connected to a respective U-shaped or V-shaped second contact section of the third busbar, in particular a fork-shaped or Y-shaped contact, for example by welding or sintering. The bent section of the respective second connection is advantageously arranged between the legs of the U-shaped or V-shaped contact of the third busbar.

[0036] According to one embodiment, the respective second sections of the first busbar are connected to the corresponding first semiconductor switching elements arranged thereon by means of a material-fitting connection, in particular by means of a welding or sintering connection, wherein an electrical connection is established between the first connection part of the corresponding first semiconductor switching element, for example the corresponding drain connection part, and the first busbar by means of the material-fitting connection.

[0037] Alternatively or additionally, according to one embodiment, the respective second sections of the second busbar are connected to the corresponding second semiconductor switching elements arranged thereon by means of a material fitting connection, in particular by means of a welding or sintering connection, wherein an electrical connection is established between the corresponding first connection parts of the corresponding second semiconductor switching elements, for example the corresponding drain connection parts, and the second busbar by means of the material fitting connection.

[0038] The corresponding first connection parts of the first and second semiconductor switching elements can be realized, for example, by the frame of the corresponding switching element and further by the pins or pins of the adjacent frame. The electrical connection between the first connection part of the corresponding switching element and the first busbar or the second busbar is established by the material matching connection between the frame or housing ("lead frame") of the corresponding switching element and the corresponding busbar. The individual pins of each switching element can be advantageously cut off or removed. If the pin is required for protection and / or control purposes, it can be retained instead of removed. Through this material matching connection, a stable electrical connection and mechanical connection can be established between the corresponding switching element and the corresponding busbar, and the thermal resistance can be reduced. In addition, the parasitic resistance of each pin can be reduced or eliminated by material matching, electrical and mechanical connection.

[0039] According to one embodiment, the half-bridge switch structure also has a circuit board, wherein the circuit board is perpendicular to or at least substantially perpendicular to the corresponding first section and the corresponding second section of the first busbar or the second busbar, and is further arranged in particular perpendicular to the main extension plane or the first section of the third busbar. At least one third connection portion of the first semiconductor switch element and at least one third connection portion of the second semiconductor switch element are electrically connected to the circuit board respectively. For example, each semiconductor switch element can have a gate connection and a Kelvin connection (also called a Kelvin source connection or an auxiliary source connection) as at least one third connection. Such a Kelvin source connection can decouple the path of the load current from the path of the control current, which can lead to improved switching characteristics. For example, these third connections are also each designed as a pin or a pin, which is led out from the corresponding semiconductor switch element, in particular parallel to its main extension plane. Each third connection portion is particularly contacted with the circuit board by a through-type installation or a plug-in installation (English: "through-hole technology", THT or "pin-in-hole technology", PIH). For this purpose, the corresponding connection pins advantageously penetrate the circuit board through corresponding connection ports (in particular in the form of holes or drill holes in the circuit board) and are materially connected to the circuit board on the side of the circuit board facing away from the busbar (rear side), in particular by welding or sintering. In particular, the circuit board can also be cooled by the cooling body. Advantageously, it is not necessary to use the circuit board as a medium for carrying the load current. The circuit board can in particular be a power supply board for power supply. The half-bridge switch structure can also have a logic circuit board for logic control, which can be arranged in parallel with the distribution board, for example, on the side of the distribution board facing or away from the busbar.

[0040] According to one embodiment, at least one elevation is provided on the side of the cooling body facing the circuit board, wherein the circuit board is arranged on the at least one elevation. In particular, this at least contributes to improving the mechanical stability and cooling of the circuit board. The at least one elevation can in particular be provided in the form of a base or a pedestal and, for example, has a cuboid or rectangular cross section. In particular, the circuit board sits or is located directly on the at least one elevation. The at least one elevation thus advantageously creates a thermal contact between the circuit board and the cooling body, so that the circuit board can also be effectively cooled by the cooling body.

[0041] According to one embodiment, the half-bridge switch structure also has a capacitor unit, which in turn has at least one discrete capacitor element, in particular a plurality of discrete capacitor elements connected in parallel. The capacitor unit is arranged on a side or surface of the third busbar facing away from the structure consisting of the first busbar and the second busbar. The capacitor unit or its capacitor element particularly represents an intermediate circuit capacitor. For example, the capacitor unit can provide a primary intermediate circuit capacitor connected in parallel to the entire parallel connection of the half bridge and / or a secondary or distributed intermediate circuit capacitor connected in parallel to each half bridge. The combination of the primary and secondary intermediate circuit capacitors can particularly reduce the inductance of the commutation loop. The use of discrete capacitor elements in the capacitor unit provides a high degree of flexibility and scalability for constructing the primary and / or secondary intermediate circuit to achieve the desired power, voltage and current ripple. The design and shape of the busbar can advantageously provide sufficient space for these intermediate circuit capacitors, which can reduce the inductance of the commutation loop. By placing the intermediate circuit capacitor as close as possible to the switching element, the inductance can be particularly reduced. Due to the short distance between the lines of the switching element, the busbar and the capacitor unit, the communication loop can be optimized. The placement of the capacitor unit and its connection with the busbar are easy to achieve during the manufacturing process. In particular, a distance between the intermediate circuit capacitor and the switching element that is as symmetrical as possible can be made possible. The capacitor unit can be cooled effectively by the cooling body. For example, the capacitor unit can be cuboid in shape and have, for example, a special cuboid capacitor element or a plurality of discrete capacitor elements arranged in a cuboid housing.

[0042] According to one embodiment, at least one first connection of the capacitor unit is electrically connected to the first busbar. To this end, the first busbar has at least one contact, to which at least one first connection of the capacitor unit is electrically connected. The at least one contact is advantageously arranged on the side of the first busbar opposite to the corresponding second section. In particular, a large number of such contacts can be provided, in particular equidistant from each other. In particular, the third section can vertically or at least substantially vertically adjoin the side of the first section of the first busbar opposite to the corresponding second section. The fourth section can in turn vertically or at least substantially vertically adjoin the third section, the fourth section in turn extending parallel to the first section. Therefore, the cross section of the first busbar can have a step or be S-shaped or Z-shaped. At least one contact can be connected in parallel to the fourth connection.

[0043] The at least one contact is in particular fork-shaped, U-shaped, V-shaped or Y-shaped, in particular when viewed in a top view of the first busbar. For example, a first contact section of such a fork-shaped or Y-shaped contact adjoins the first busbar, in particular adjoins its fourth section, advantageously parallel to the fourth section. In particular, a second U-shaped or V-shaped contact section, viewed in a top view, adjoins the first contact section with a leg extending parallel to the fourth section, the leg being used for electrical connection to the first connection of the capacitor unit, for example by welding or sintering. The first contact section and the U-shaped or V-shaped second contact section together form a fork-shaped or Y-shaped contact.

[0044] According to one embodiment, at least one second connection portion of the capacitor unit is electrically connected to the third busbar. For this purpose, the third busbar has at least one connection opening, for example in the form of a hole or a drilled hole, on its side or surface facing away from the structure consisting of the first busbar and the second busbar. At least one second connection portion of the capacitor unit is electrically connected to at least one connection opening of the third busbar. For example, the second connection portions of the capacitor units can each be designed as a pin or a lead, which passes through a connection opening in the third busbar and is connected to the third busbar on its side facing the structure consisting of the first busbar and the second busbar in a material-fitting manner, in particular by welding or sintering connection (straight-through mounting, "through-hole technology", THT).

[0045] According to one embodiment, the half-bridge switch structure further has at least one cooling body electrical insulation layer, wherein the structure consisting of the first busbar and the second busbar is electrically insulated from the cooling body by the at least one cooling body insulation layer. The at least one first cooling body electrical insulation layer is arranged on the side or surface of the second section of the first busbar facing away from the first semiconductor switch element and / or arranged on the side or surface of the second section of the second busbar facing away from the second semiconductor switch element. For example, each second section of the first busbar and the second busbar can be provided with its own first cooling body electrical insulation layer. A common first heat dissipation insulation layer can also be provided for multiple or all second sections of the first busbar and the second busbar.

[0046] According to one embodiment, the half-bridge switch structure further has at least one second cooling body electrically insulating layer, wherein the first busbar is electrically insulated from the cooling body by the at least one second cooling body electrically insulating layer, and wherein the at least one second cooling body electrically insulating layer is arranged between the first busbar and the cooling body. As explained, the first busbar may, for example, have a step or a cross section that is S-shaped or Z-shaped with a third section and a fourth section. For example, the second cooling body electrically insulating layer may be arranged between the fourth section and the cooling body.

[0047] The first cooling body electrical insulation layer and the second cooling body electrical insulation layer can be made of metallized ceramic or ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4). Such ceramic layers have low thermal resistance compared to other conventional thermal interface materials. The first and second cooling body insulation layers advantageously each represent a thermal interface material (English: "thermal interface material", TIM) between the corresponding busbar and the cooling body, and each can have as low a thermal resistance as possible or as high a thermal conductivity as possible. The thermal resistance between the switching element, the busbar and the cooling body can thereby be reduced, so that heat can be effectively dissipated.

[0048] For example, when exposed to alternating electric fields, such switching elements or cooling body insulation layers made of ceramic materials have significantly higher robustness and service life compared to plastics. Loads on the insulation layer can occur due to high switching frequencies and high edge steepness, especially due to the use of fast-switching semiconductors.

[0049] According to one embodiment, the half-bridge switch structure further has a retaining element, wherein the retaining element is arranged between the third busbar and the structure consisting of the first busbar and the second busbar. The retaining element is designed to press the structure consisting of the first busbar and the second busbar against the cooling body, and in particular to hold the structure consisting of the third busbar, the first busbar, the second busbar and the cooling body together. For this purpose, the retaining element can be fastened to the cooling body in particular by a fastening mechanism (e.g. by a screw). The third busbar and the structure consisting of the first busbar and the second busbar are advantageously further electrically insulated from each other by the retaining element.

[0050] The half-bridge switching structure can be used in particular in a rectifier or a rectifier circuit, for example in an inverter or an inverter for converting between a DC voltage and an AC voltage, wherein a parallel connection of half bridges can be advantageously provided for each phase of a multi-phase AC voltage. For this purpose, the first busbar and the third busbar can be electrically connected, for example, to a DC voltage connection, and the second busbar can be electrically connected to an AC voltage connection.

[0051] In particular, half-bridge switching devices are suitable for use in (motor) vehicles in order to efficiently convert voltages between a DC electrical system and an electric machine that can be operated with a multi-phase AC voltage. The required power or current levels can be achieved by connecting half bridges in parallel, in particular in high-performance rectifiers in the vehicle field. For this purpose, a first busbar and a third busbar can be connected to the DC power system, and the second busbar can be connected to the phases of the electric machine. Thus, a half-bridge switching structure or a parallel connection of individual half-bridges can be provided in particular for one phase of the electric machine. Therefore, a corresponding number of half-bridge switching structures can be advantageously provided in a corresponding multi-phase inverter of a (motor) vehicle, for example three half-bridge switching structures for a three-phase electric machine.

[0052] Further advantages and improvements of the invention are apparent from the description and the accompanying drawings.

[0053] The invention is schematically illustrated in the drawings using exemplary embodiments and is described below with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 An embodiment of a half-bridge switch structure according to the present invention is schematically shown in the form of a circuit diagram.

[0055] FIG. 2 schematically shows an embodiment of a half-bridge switching structure according to the invention in different views a) to g). DETAILED DESCRIPTION

[0056] exist Figure 1 In FIG. 1 , an embodiment of a half-bridge switching structure according to the present invention is schematically shown as a circuit diagram and is designated as 1 .

[0057] The half-bridge switch structure 1 is intended for rectification or inversion between a DC voltage connection 3, 4 and an AC voltage connection 2 and has a plurality of half-bridges 5 connected in parallel, each half-bridge having a discrete first semiconductor switching element 11 and a discrete second semiconductor switching element 21, for example in the form of a metal oxide semiconductor field effect transistor (MOSFET) or a bipolar transistor with an insulated gate electrode (IGBT). The first semiconductor switching element 11 of the half-bridges 5 connected in parallel forms a high-side switch 10 and the second semiconductor switching element 21 of the half-bridges 5 connected in parallel forms a low-side switch 20. The number of half-bridges 5 connected in parallel and therefore the number of the individual first semiconductor switching elements 11 and second semiconductor switching elements 21 can be selected in such a way that a desired power or a desired current is achieved.

[0058] The half-bridge switch structure 1 also has a positive bus 30 as a first bus, a negative bus 40 as a second bus, and an output phase bus 70 as a third bus. The drain connection parts (first connection parts) of the first semiconductor switch elements 11 are all electrically connected to the positive bus 30. The source connection parts (second connection parts) of the first semiconductor switch elements 11 are respectively electrically connected to the output phase bus 70. The drain connection parts (first connection parts) of each second semiconductor switch element 21 are also electrically connected to the output phase bus 70. The source connection parts (second connection parts) of the second semiconductor switch elements 21 are respectively electrically connected to the negative bus 40.

[0059] Furthermore, a plurality of first capacitor elements 51 are provided as primary intermediate circuit capacitors 50, wherein these first capacitor elements 51 are respectively connected in parallel to the parallel connection of the respective half bridge 5. A plurality of second capacitor elements 51' are provided as secondary or distributed intermediate circuit capacitors 50', wherein one of these second capacitor elements 51' is connected in parallel to one of the half bridges 5.

[0060] For example, the arrangement 1 can be used in a (motor) vehicle, whereby the DC voltage connections 3, 4 can be connected, for example, to a DC voltage electrical system, and wherein, for example, the phases of an electric machine can be connected to the AC voltage connection 2. The electric machine can be a multiphase machine, for example typically having three or more phases. For each phase, in particular, a phase connection such as Figure 1 The illustrated half-bridge switching structure has a plurality of parallel-connected half-bridges 5. Furthermore, in particular, a control unit for controlling the individual switching elements 11, 21 can be provided, wherein the control unit can control the gate terminals of the switching elements 11, 21 in a manner that rectifies or inversely rectifies the current.

[0061] exist Figure 2a to Figure 2g In FIG. 1 , embodiments of half-bridge switching structures according to the invention are schematically shown in various views and each half-bridge switching structure is designated 100. A coordinate system is shown for better orientation.

[0062] exist Figure 2a , a portion of a half-bridge switch structure 100 is schematically shown in a top view along the z-axis on the x / y plane.

[0063] according to Figure 1 In the circuit diagram shown, the half-bridge switching structure 100 has a positive busbar 130 and an output phase busbar 170. The x / y plane simultaneously represents the main extension plane of the busbars.

[0064] like Figure 2a As shown, the first busbar 130, for example the positive busbar here, is comb-shaped and has a first section 131, which is in particular plate-shaped, and a plurality of second sections 132, which are in particular plate-shaped, each second section being adjacent to the same section 131 on a first side or edge of the first section 131 at equal distances, so that gaps 135 are provided between each second section 132.

[0065] The second busbar 170, for example, here an output phase busbar, is also comb-shaped and has a first section 171, in particular a plate-shaped section, and a plurality of second sections 172, in particular each a plate-shaped section. These second sections 172 each adjoin a first side or edge of the first section 171 of the output phase busbar 170 at an equidistant distance from one another, so that gaps 175 are provided between the individual second sections 172 of the output phase busbar 170.

[0066] In the following, the z-direction oriented perpendicularly to the respective first sections 131, 171 and the respective second sections 132, 172 of the positive busbar 130 and the output phase busbar 170 is also referred to as the height direction. The z-direction is particularly perpendicular to Figure 2a The x-direction oriented perpendicular to the z-direction is also referred to as the longitudinal direction. The y-direction oriented perpendicular to both the z-direction and the x-direction is also referred to as the width direction.

[0067] The positive busbar 130 and the output phase busbar 170 are arranged relative to each other so that the second section 172 of the output phase busbar 170 is arranged in the gap 135 between the second sections 132 of the positive busbar 130 in the projection of the positive busbar 130 on the main extension plane, and the second section 132 of the positive busbar 130 is respectively arranged in the gap 175 between the second sections 172 of the output phase busbar 170 in the projection of the output phase busbar 170 on the main extension plane.

[0068] For example, when observed from the z direction or the height direction, the first section 131 of the positive busbar 130 is arranged above the first section 171 of the output phase busbar 170 or at least slightly offset upward, so that the second section 132 of the positive busbar 130 is located above the gap 175 of the output phase busbar when observed in the z direction or at least slightly offset upward, and so that when observed in the height direction, the second section 172 of the output phase busbar 170 is correspondingly located below the gap 135 of the positive busbar 130 or at least slightly offset downward.

[0069] Viewed from the z direction, a plurality of first cooling body electrical insulation layers 191 are arranged below the second section 132 of the positive bus 130 and the second section 172 of the output phase bus 170, wherein such cooling body insulation layers 191 are jointly arranged for one of the second sections 132 of the positive bus 130 and one of the second sections 172 of the output phase bus 170.

[0070] In the example shown, the positive busbar 130 also has a third section 133 and a fourth section 134, wherein the third section 133 adjoins the first section 131 vertically or at least substantially vertically on the side opposite to the corresponding second section 132. The third section 133 thus extends in the z-direction. The fourth section 134 adjoins the third section 133 vertically or at least substantially vertically, and the fourth section 134 in turn extends parallel to the first section 131. Therefore, the positive busbar 130 has a step or a cross section that is S-shaped or Z-shaped.

[0071] Viewed from the z-direction, the second cooling body electrical insulation layer 192 is disposed below the fourth section 134 of the positive busbar 130 .

[0072] The positive busbar 130 also has a plurality of contacts 136, which are arranged on a side of the positive busbar 130 opposite to the corresponding second section 132, for example, on a side of the fourth section 134 opposite to the second section 132. For example, when viewed in a top view, each of the contacts 136 is forked or Y-shaped, wherein the first contact section 137 of each contact 136 is adjacent to the fourth section 134 parallel thereto. The second contact section 138, which is U-shaped or V-shaped when viewed in a top view, is adjacent to the first contact section 137 with a leg extending parallel to the fourth section 134.

[0073] In addition, the output phase busbar 170 also has a plurality of contacts 176, each of which is adjacent to the first section 171, in particular in one of the gaps 175. These contacts 176 specifically each extend in the z direction and are therefore perpendicular to the first section 171 and the second section 172 of the output phase busbar 170. Figure 2c These contacts 176 are explained in detail.

[0074] Corresponds to Figure 2a , Figure 2b A portion of a half-bridge switch structure 100 is schematically shown in a top view.

[0075] like Figure 1 As shown in the circuit diagram, the half-bridge switch structure 100 has a plurality of half-bridges connected in parallel, each half-bridge having a discrete first semiconductor switch element 111 and a discrete second semiconductor switch element 121, for example in the form of MOSFET or IGBT, respectively. Therefore, the half-bridge switch structure 100 has a plurality of first semiconductor switch elements 111 forming a high-side switch and a plurality of second semiconductor switch elements 121 forming a low-side switch.

[0076] As in Figure 2b As can be seen in FIG. 1 , each of the first semiconductor switching elements 111 is respectively arranged on each of the second sections 132 of the positive busbar 130, in particular, on the upper side of the corresponding second section 132 when viewed along the z direction. In addition, each of the second semiconductor switching elements 121 is respectively arranged on each of the second sections 172 of the output phase busbar 170, in particular, on the upper side of the corresponding second section 172 when viewed along the z direction.

[0077] exist Figure 2b In the embodiment, five first or second semiconductor switching elements 111 and 121 are provided by way of example, but the number of semiconductor switching elements may also be larger or smaller, in particular depending on the desired power or desired current flowing through the total number of semiconductor switching elements. Therefore, the positive bus 130 and the output phase bus 170 may also have more or less than five second sections 132 and 172, respectively.

[0078] The respective first connection parts, for example the respective drain connection parts, of the respective first semiconductor switching elements 111 are electrically connected to the positive busbar 130. For this purpose, the respective second sections 132 of the positive busbar 130 are respectively connected to the respective first semiconductor switching elements 111 arranged thereon by welding or sintering, wherein an electrical connection is established between the respective drain connection parts of the respective first semiconductor switching elements 111 and the positive busbar 130 by the welding or sintering connection.

[0079] Accordingly, the respective first connection portions, for example the respective drain connection portions, of the respective second semiconductor switching elements 121 are electrically connected to the output phase bus 170. For this purpose, the respective second sections 172 of the output phase bus 170 are respectively connected to the respective second semiconductor switching elements 121 arranged thereon by welding or sintering, wherein an electrical connection is established between the respective drain connection portions of the respective second semiconductor switching elements 121 and the output phase bus 170 by the welding or sintering connection.

[0080] The drain connection of each of the first and second semiconductor switching elements 111, 121 can be realized, for example, through the frame of the respective switching element 111, 121, so that the corresponding electrical connection with the drain connection is established by welding or sintering the frame or housing of the corresponding switching element 111, 121 and the corresponding busbar 130, 170. For example, a separate drain pin or lead adjacent to the frame can be cut off or removed.

[0081] At least one third connection portion 116 of the first semiconductor switch element 111 and at least one third connection portion 126 of the second semiconductor switch element 121 are both electrically connected to the circuit board, as will be described below with reference to Figure 2f and 2g For example, each of the semiconductor switching elements 111 , 121 may have a gate connection and a Kelvin source connection as such a third connection.

[0082] In addition, the corresponding second connection parts of the first semiconductor switch element 111, such as the corresponding source connection parts, are electrically connected to the output phase bus 170, and the corresponding second connection parts of the second semiconductor switch element 121, such as the corresponding source connection parts, are electrically connected to the third, here, negative bus 140, as will be referred to below. Figure 2c Explained.

[0083] Figure 2c A portion of a half-bridge switch structure 100 is schematically shown in a perspective view.

[0084] like Figure 2c As shown, the half-bridge switch structure 100 further has a third busbar 140 , for example a negative busbar 140 , and a cooling body 180 .

[0085] Negative busbar 140 is arranged on a first side of the structure consisting of positive busbar 130 and output phase busbar 170 with first semiconductor switching element 111 and second semiconductor switching element 121 , in particular above positive busbar 130 when viewed in the z direction.

[0086] The cooling body 180 is arranged on a second side of the structure consisting of the positive busbar 130 and the output phase busbar 170 opposite to the first side, in particular below the output phase busbar 170 when viewed in the z-direction.

[0087] The structure consisting of the positive busbar 130 and the output phase busbar 170, in particular the corresponding second sections 132 and 172 are electrically insulated from the cooling body 180 by the first cooling body electrical insulation layer 191. In addition, the negative busbar 130, in particular the fourth section 134 thereof, is electrically insulated from the cooling body 180 by the second cooling body electrical insulation layer 192. Each of the first cooling body electrical insulation layer 191 and the second cooling body electrical insulation layer 192 can be made of metallized ceramic or ceramic material, such as aluminum oxide (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4).

[0088] The outer surface of each first and second semiconductor switch element 111, 121 is in thermal contact with the positive busbar 130 or the output phase busbar 170, respectively. Each busbar 130, 140, 170 is in thermal contact with the cooling body 180. This means that the heat from each switch element 111, 121 and each busbar 130, 140, 170 can be effectively transferred to the cooling body and dissipated from it. The special (comb-like) shape of the positive busbar 130 and the output phase busbar 170 can facilitate the connection of each semiconductor switch element 111, 121, and improve the conductivity and heat transfer from the switch element 111, 121 to the cooling body 180.

[0089] from Figure 2c As can be seen in FIG. 1 , the output phase busbar 170 may also have a third section 173, which vertically or at least substantially vertically adjoins the side of the first section 171 opposite the corresponding second section 172. The third section 173 therefore extends parallel to the z-axis.

[0090] The holding element 101 is arranged between the negative busbar 140 and the structure consisting of the positive busbar 130 and the output phase busbar 170, in particular between the negative busbar 140 and the positive busbar 130. The holding element 101 is designed to press the structure consisting of the positive busbar 130 and the output phase busbar 170 against the cooling body 180, and also to hold the structure consisting of the negative busbar 140, the positive busbar 130, the output phase busbar 170 and the cooling body 180 together. The holding element 101 can be fastened to the cooling body 180, for example, by a fastening mechanism (for example, by screws). In addition, the negative busbar 140 and the structure consisting of the positive busbar 130 and the output phase busbar 170, in particular the negative busbar 140 and the positive busbar 130, are electrically insulated from each other by the holding element 101.

[0091] The negative busbar 140 has a plate-shaped first section 141 and a plurality of contacts 146 adjoining the first section 141. The first section 141 of the negative busbar 140 is arranged in parallel to the respective first sections 131, 171 and respective second sections 132, 172 of the positive busbar 130 and the output phase busbar 170.

[0092] When viewed in a plan view of the negative busbar 140, each contact 146 of the negative busbar 140 is designed to be forked or Y-shaped. The first contact section 147 of each forked or Y-shaped contact 146 adjoins the first section 141 of the negative busbar 140 and extends in particular parallel to the first section 141 or in the same plane as the first section 141. The second contact section 148, which is U-shaped or V-shaped when viewed in a plan view, adjoins the corresponding first contact section 147 with a leg extending parallel to the first section 141.

[0093] These contacts 147 of the negative busbar 140 are specifically arranged to electrically connect the second connection 125, for example the source connection, of the second semiconductor switching element 121 to the negative busbar 140. For this purpose, for example, each source connection 125 of the second semiconductor switching element 121 is bent or folded, for example, by 90° or at least substantially 90° relative to the main extension plane of the corresponding semiconductor switching element 121, respectively, to connect to one of the contacts 147 of the negative busbar 140. This bent or folded section of the corresponding source connection 125 is electrically connected to the U-shaped or V-shaped second contact section 148 of the corresponding contact 146 of the negative busbar 140, for example, by welding or sintering connection.

[0094] As referenced above Figure 2a As explained, the output phase bus 170 has a plurality of contacts 176. Figure 2c As shown, these contacts 176 can be designed, for example, in an S-shape or a Z-shape when viewed from the side view of the output phase bus 170. The first contact sections 177 of these individual S-shaped or Z-shaped contacts 176 are advantageously respectively adjacent to the first section 171 of the output phase bus 170 vertically or at least substantially vertically, in particular in one of the corresponding gaps 175 between the corresponding second sections 172. The second contact section 178 is, for example, distributed vertically or at least substantially vertically adjacent to each of these first contact sections 177, and the second contact section particularly extends parallel to the first section 171 of the output phase bus 170. The third contact section 179 is, for example, vertically or at least substantially vertically adjacent to the corresponding second contact section 178, and the third contact section is, for example, parallel to the corresponding first contact section 177 and perpendicular to the first section 171 and the second section 172 of the output phase bus 170.

[0095] These contacts 176 of the output phase bus 170 are specifically arranged to electrically connect the second connection 115, for example the source connection, of the first semiconductor switching element 111 to the output phase bus 170. For this purpose, for example, each source connection 115 of the first semiconductor switching element 111 is bent or folded, for example, by 90° or at least substantially 90° relative to the main extension plane of the corresponding semiconductor switching element 111, respectively, to connect to one of the contacts 176 of the output phase bus 170. This bent or folded section of the corresponding source connection 115 is electrically connected to the third contact section 179 of the corresponding contact 176 of the output phase bus 170, for example, by welding or sintering connection.

[0096] like Figure 2c As shown, the cooling body 180 has a base-like or pedestal-like raised portion 181. These raised portions 181 are provided for mechanical stabilization and cooling of the circuit board, as will be described below with reference to Figure 2f and 2g Explained.

[0097] The negative busbar 140 has a plurality of connection openings 149 on its side or surface facing away from the structure consisting of the positive busbar 130 and the output phase busbar 170, for example in the form of holes or drilled holes. These connection openings 149 of the negative busbar 140 and the Y-shaped or fork-shaped contacts 136 of the positive busbar 130 are arranged to electrically connect the negative busbar 140 and the positive busbar 130 to the intermediate circuit capacitor, which will be referred to below. Figure 2d and 2e Provide explanation.

[0098] Figure 2d The stereogram and Figure 2e The side view in FIG. 1 schematically shows a portion of a half-bridge switch structure 100 .

[0099] like Figure 2d and Figure 2e As shown, the half-bridge switch structure 100 further includes a plurality of capacitor units 150 , each of which is arranged on a side of the negative bus 140 that faces away from the structure consisting of the positive bus 130 and the output phase bus 170 .

[0100] Each of these capacitor units 150 has at least one discrete capacitor element. The capacitor unit 150 or its capacitor element in particular represents an intermediate circuit capacitor. For example, each capacitor unit 150 can provide a primary intermediate circuit capacitor and / or a secondary or distributed intermediate circuit capacitor.

[0101] The respective first connection of each capacitor unit 150 is electrically connected to the positive busbar 130, in particular, one of the contacts 136 of the positive busbar. For this purpose, the respective first connection of the respective capacitor unit 150 can be electrically and mechanically connected to the U-shaped or V-shaped second contact section 138 of the respective contact 136, for example, by welding or sintering connection.

[0102] The respective second connection portions of the respective capacitor units 150 are electrically connected to the negative busbar 140, in particular, are respectively electrically connected to one of the connection ports 149 of the negative busbar 140. For example, for this purpose, the respective second connection portions of the respective capacitor units 150 may penetrate the respective connection ports 149 as pins or leads and may be connected to the negative busbar 140 on the side facing the structure consisting of the positive busbar 130 and the output phase busbar 170 by welding or sintering connection.

[0103] In the example shown, five DC capacitors connected in parallel are provided, but the number of capacitor elements can also be less or more. The size of the DC intermediate circuit can depend on multiple factors, for example, on the output current or output power of the inverter, the change of the modulation index, the required voltage ripple and the ripple current capacity of each capacitor. The number of parallel capacitors can be changed according to the application. The half-bridge switch structure 100 provides the flexibility of expanding the intermediate circuit at different powers. The number of parallel capacitors can be different from the number of parallel half bridges. The arrangement of the capacitor is very close to the half bridge, which reduces the inductance of the commutation loop. The capacitor can be cooled by contacting the inverter housing with the surface material or filler, which further improves the cooling of the intermediate circuit.

[0104] Figure 2f A half-bridge switching structure 100 is shown in a schematic exploded view. Figure 2g A half-bridge switching structure 100 is shown in a schematic top view.

[0105] like Figure 2f and 2g As shown, the half-bridge switch structure 100 further has a circuit board 160 .

[0106] The circuit board 160 is arranged perpendicularly or at least substantially perpendicularly to the respective first sections 131, 171 and the respective second sections 132, 172 of the positive busbar 130 or the output phase busbar 170, and moreover in particular perpendicularly to the main extension plane or the first section 141 of the negative busbar 140. The circuit board 160 is, for example, directly seated or rested on the raised portion 181 of the cooling body 180. In this way, thermal contact is established between the circuit board 160 and the cooling body 180, so that the circuit board 160 can also be effectively cooled by the cooling body 180.

[0107] Especially in Figure 2gIt can be seen that the corresponding third connection parts 116 and 126 of the first semiconductor switching element 111 and the second semiconductor switching element 121, such as the gate connection part and the Kelvin source connection part, are electrically connected to the circuit board 160, because these connection parts, which are respectively designed as pins, penetrate the circuit board 160 through the corresponding connection ports and are connected to the circuit board 160 on the side away from the busbars 130, 140, 170 by welding or sintering.

[0108] Figure 2a to Figure 2g The illustrated half-bridge switch structure 100 according to the exemplary embodiment of the present invention has an intermediate circuit inductance that is as low as possible and a thermal impedance that is as low as possible and can be cooled efficiently.

[0109] List of reference numerals:

[0110] 1 Half-bridge switch structure

[0111] 2 AC voltage connection

[0112] 3 DC voltage connection

[0113] 4 DC voltage connection

[0114] 5 Half Bridge

[0115] 10 High-side switch

[0116] 11. First semiconductor switching element

[0117] 20 Low-side switch

[0118] 21 Second semiconductor switch element

[0119] 30 positive bus

[0120] 40 Negative bus

[0121] 50 Primary intermediate circuit capacitor

[0122] 51 First intermediate circuit capacitor

[0123] 50' Secondary Intermediate Circuit Capacitor

[0124] 51' Second intermediate circuit capacitor

[0125] 70 Output phase bus

[0126] 100 Half-bridge switch structure

[0127] 101 Holding element

[0128] 111 first semiconductor switch element

[0129] 115 second connection portion, source connection portion

[0130] 116 Third connection, gate connection, Kelvin source connection

[0131] 121 second semiconductor switch element

[0132] 125 second connection portion, source connection portion

[0133] 126 Third connection, gate connection, Kelvin source connection

[0134] 130 first bus, positive bus

[0135] 131 The first section of the positive bus

[0136] 132 Second section of positive busbar

[0137] 133 The third section of the positive bus

[0138] 134 The fourth section of the positive bus

[0139] 135 Clearance of positive busbar

[0140] 136 positive busbar (fork-shaped, Y-shaped) contact

[0141] 137 first contact section

[0142] 138 (U-shaped, V-shaped) second contact section

[0143] 140 Second bus, negative bus

[0144] 141 The first section of the negative bus

[0145] 146 Negative busbar (fork-shaped, Y-shaped) contact

[0146] 147 first contact section

[0147] 148 (U-shaped, V-shaped) second contact section

[0148] 149 Connection port

[0149] 150 Capacitor Units

[0150] 160 Circuit Board

[0151] 170 Second bus, output phase bus

[0152] 171 The first section of the output phase bus

[0153] 172 Second section of output phase bus

[0154] 173 The third section of the output phase bus

[0155] 175 Output phase busbar clearance

[0156] 176 Output phase busbar (S-shaped, Z-shaped) contacts

[0157] 177 First contact section

[0158] 178 Second contact section

[0159] 179 Third contact section

[0160] 180 Cooling body

[0161] 181 Rising portion of cooling body

[0162] 191 first cooling body electrical insulation layer

[0163] 192 second cooling body electrical insulation layer

Claims

1. A half-bridge switch structure (1, 100) comprising a plurality of half-bridges (5) connected in parallel, wherein: Each half bridge (5) has a first semiconductor switch element (11, 111) and a second semiconductor switch element (21, 121), respectively, and the half bridge switch structure comprises: - a first busbar (30, 130), to which the first connection parts of the first semiconductor switch elements (11, 111) are electrically connected, respectively; - a second busbar (70, 170), to which the second connection portion (115) of the first semiconductor switch element (11, 111) and the first connection portion of the second semiconductor switch element (21, 121) are electrically connected, respectively, - a third busbar (40, 140), the second connection parts (125) of the second semiconductor switch elements (21, 121) are electrically connected to the third busbar (40, 140), respectively, and - a cooling body (180), The first busbar (30, 130) has a first section (131) and a plurality of second sections (132), wherein the second sections (132) of the first busbar (130) are adjacent to the first section (131) of the first busbar (130), thereby providing gaps (135) between the second sections of the first busbar (130), Each of the plurality of first semiconductor switch elements (11, 111) is arranged on each second section (132) of the first busbar (130), wherein the second busbar (70, 170) has a first section (171) and a plurality of second sections (172), wherein the second section (172) of the second busbar (170) is adjacent to the first section (171) of the second busbar (170), thereby providing a gap (175) between each second section (172) of the second busbar (170), Each of the plurality of second semiconductor switch elements (21, 121) is arranged on each second section (172) of the second busbar (170), wherein the first busbar (130) and the second busbar (170) are arranged relative to each other such that the second section (172) of the second busbar (170) is arranged in a gap (135) between the second sections (132) of the first busbar (130) in a projection of the first busbar (130) on the main extension plane, and the second section (132) of the first busbar (130) is arranged in a gap (175) between the second sections (172) of the second busbar (170) in a projection of the second busbar (170) on the main extension plane, respectively, The third busbar (40, 140) is arranged on a first side of a structure consisting of the first busbar (30, 130) and the second busbar (70, 170), the first side comprising a first semiconductor switching element (11, 111) and a second semiconductor switching element (21, 121), and The cooling body (180) is arranged on a second side of the structure composed of the first busbar (30, 130) and the second busbar (70, 170), the second side being opposite to the first side.

2. The half-bridge switch structure according to claim 1, wherein: The second busbar (170) has a plurality of contacts (176), wherein the contacts (176) are adjacent to a first section (171) of the second busbar (170), wherein each of the contacts (176) of the second busbar (170) is electrically connected to a corresponding second connection portion (115) of the first semiconductor switching element (111).

3. The half-bridge switch structure according to claim 2, wherein: The corresponding second connecting parts (115) of the first semiconductor switch elements (111) are bent or folded to be connected to the corresponding contacts (176) of the second busbar (170), respectively.

4. A half-bridge switch structure according to any one of the preceding claims, wherein: The third busbar (140) has a first section (141) and a plurality of contacts (146), wherein the contacts (146) are adjacent to the first section (141) of the third busbar (140), wherein each of the contacts (146) of the third busbar (140) is electrically connected to a corresponding second connection portion (125) of the second semiconductor switching element (121).

5. The half-bridge switch structure according to claim 4, wherein: The corresponding second connecting parts (125) of the second semiconductor switch elements (121) are bent or folded to be connected to the corresponding contacts (146) of the third busbar (140), respectively.

6. A half-bridge switch structure according to any one of the preceding claims, -in, The respective second sections (132) of the first busbar (130) are connected to the corresponding first semiconductor switching element (111) by material connection, in particular by welding or sintering, and an electrical connection is established between the corresponding first connection portion of the corresponding first semiconductor switching element (111) and the first busbar (130) by the material connection, and / or -in, The respective second sections (172) of the second busbar (170) are connected to the corresponding second semiconductor switch element (121) by material fitting connection, in particular by welding or sintering connection, and electrical connection is established between the corresponding first connection part of the corresponding second semiconductor switch element (121) and the second busbar (170) by the material fitting connection.

7. The half-bridge switch structure according to any one of the preceding claims, further comprising a circuit board (160), wherein: The circuit board (160) is arranged perpendicularly or at least substantially perpendicularly to the first section (131) and the second section (132) of the first busbar (130) and the first section (171) and the second section (172) of the second busbar (130), wherein at least one third connection portion (116) of the first semiconductor switch element (111) and at least one third connection portion (126) of the second semiconductor switch element (121) are respectively electrically connected to the circuit board (160).

8. The half-bridge switch structure according to claim 7, wherein: At least one raised portion (181) is provided on a side of the cooling body (180) facing the circuit board (160), wherein the circuit board (160) is arranged on the at least one raised portion (181).

9. The half-bridge switch structure according to any of the preceding claims, further comprising a capacitor unit (150) having at least one capacitor element, wherein: The capacitor unit (150) is arranged on a side of the third busbar (140) that is away from the structure consisting of the first busbar (130) and the second busbar (170).

10. The half-bridge switch structure according to claim 9, wherein: At least one first connection portion of the capacitor unit (150) is electrically connected to a first busbar (130), wherein the first busbar (130) has at least one contact (136), wherein at least one first connection portion of the capacitor unit (150) is electrically connected to at least one contact (136) of the first busbar (130).

11. The half-bridge switch structure according to claim 9 or 10, wherein: At least one second connection portion of the capacitor unit (150) is electrically connected to the third busbar (140), wherein the third busbar (140) has at least one connection port (149) on a side thereof away from the structure consisting of the first busbar (130) and the second busbar (170), wherein at least one second connection portion of the capacitor unit (150) is electrically connected to at least one connection port (149) of the third busbar (140).

12. The half-bridge switch structure according to any of the preceding claims, further comprising at least one first cooling body electrically insulating layer (191), wherein: A structure consisting of a first busbar (130) and a second busbar (170) is electrically insulated from a cooling body (180) by at least one first cooling body electrical insulation layer (191), wherein the at least one first cooling body electrical insulation layer (191) is arranged on a side of a second section (132) of the first busbar (130) facing away from the first semiconductor switching element (111) and / or on a side of a second section (172) of the second busbar (170) facing away from the second semiconductor switching element (121).

13. The half-bridge switch structure according to any of the preceding claims, further comprising at least one second cooling body electrically insulating layer (192), wherein: The first busbar (130) is electrically insulated from the cooling body (180) by at least one second cooling body electrical insulation layer (192), wherein the at least one second cooling body electrical insulation layer (192) is arranged between the first busbar (130) and the cooling body (180).

14. The half-bridge switch structure according to any one of the preceding claims, further comprising a holding element (101), wherein: The retaining element (101) is arranged between the third busbar (140) and the structure consisting of the first busbar (130) and the second busbar (170), wherein the retaining element (101) is designed to press the structure consisting of the first busbar (130) and the second busbar (170) against the cooling body.

Images