Device consistency test screening method and device and electronic equipment

Abstract

The invention provides a device consistency testing and screening method and device and electronic equipment, and the method comprises the steps: arranging IGBT modules which are connected in parallel, and enabling the IGBT modules to be internally provided with uniformly and symmetrically laminated busbars; setting the lengths of the gate pole signal wiring corresponding to each IGBT module to be consistent; selecting a target topological structure corresponding to the IGBT module, and screening a target IGBT module meeting a preset parameter index; and performing a single and double pulse test on the target IGBT module, and determining that the static current-sharing degree and the dynamic current-sharing degree corresponding to the target IGBT module are both smaller than a preset current-sharing degree threshold value. The consistency of the IGBT module can be improved through topological optimization design, multi-parameter screening and comprehensive performance testing, so that the reliability and efficiency of a converter system are improved.

Description

Technical Field

[0001] The present disclosure relates to the field of power electronics technology, and in particular to a device consistency test screening method, device and electronic equipment. Background Art

[0002] In the field of power electronics, insulated gate bipolar transistors (IGBTs) are widely used in medium and high power converter equipment due to their high switching speed, high efficiency and high power density. In high-power converters of MW level and above, in order to further increase the output power level, it is usually necessary to adopt the parallel technology of multiple IGBT modules. Through parallel connection, the current load can be shared, the power density of the converter can be improved and the heat load of a single module can be reduced. However, in the parallel application of IGBT modules, the consistency problem has an important impact on its performance, especially in static current distribution and dynamic current distribution, which is prone to uneven current distribution, resulting in reduced efficiency, module overheating and even damage.

[0003] The consistency problem of IGBT modules is usually partially compensated by optimizing the drive circuit design or busbar layout. However, this method is limited by the parameter differences of the modules themselves and cannot fundamentally solve the problem of uneven current. In addition, some studies have tried to improve consistency by screening IGBT modules, but the existing screening standards are mostly based on a single parameter and do not fully consider the combined impact of multiple parameters and their performance in actual applications, making it difficult to meet the requirements of high-power converters. Summary of the invention

[0004] The embodiments of the present disclosure at least provide a device consistency test screening method, apparatus and electronic equipment, which can improve the consistency of IGBT modules through topology optimization design, multi-parameter screening and comprehensive performance testing, thereby improving the reliability and efficiency of the converter system.

[0005] The present disclosure provides a device consistency test screening method, including:

[0006] Arrange parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars;

[0007] Setting the gate signal wiring length corresponding to each IGBT module to be consistent;

[0008] Select a target topology structure corresponding to the IGBT module, and select a target IGBT module that meets preset parameter indicators;

[0009] A single and double pulse test is performed on the target IGBT module to determine that a static average current and a dynamic average current corresponding to the target IGBT module are both less than a preset average current threshold.

[0010] In an optional implementation manner, the IGBT module is provided with uniform and symmetrical laminated busbars, specifically comprising:

[0011] For the IGBT module in the four-parallel mode, every two branches are connected in parallel with copper bars, and then a bus is led out from the middle of the parallel copper bars;

[0012] For the IGBT module in three-parallel mode, the path from each branch to the AC side reactor is set to be consistent.

[0013] In an optional implementation manner, screening a target IGBT module that meets a preset parameter index specifically includes:

[0014] Screening that the deviation between the gate threshold voltage corresponding to the IGBT module and the preset first voltage design value is not greater than the preset first voltage threshold;

[0015] In the screening transfer characteristic, the deviation between the gate voltage value corresponding to the IGBT module and the preset second voltage design value under the preset target current is not greater than the preset second voltage threshold;

[0016] The deviation value between the equivalent transconductance corresponding to the IGBT module and a preset third voltage design value is screened to be no greater than a preset third voltage threshold.

[0017] In an optional implementation manner, performing a single and double pulse test on the IGBT module specifically includes:

[0018] Construct a single and double pulse test platform including a capacitor pool, a DC busbar, a pulse generator, and adjustable load inductance;

[0019] For the test of the static current balance, the switch voltage corresponding to the target IGBT module and the on-current of each branch are collected through the single and double pulse test platform, and the branch current distribution coefficient corresponding to the branch on-current is determined to ensure that the static parameters of the target IGBT module are consistent;

[0020] For the dynamic current averaging test, the switching characteristic parameters of the target IGBT module during the switching process are collected through the single and double pulse test platform to ensure that the target IGBT module has consistency in dynamic parameters.

[0021] In an optional implementation manner, the capacitor pool is used to generate a large current required for a pulse test;

[0022] The DC busbar is used to connect the capacitor pool and the test loop to form a low-impedance current path;

[0023] The pulse generator is used to generate single and double pulse signals to control the on and off of the target IGBT module to simulate actual working conditions;

[0024] The adjustable load inductance is used to simulate the switching response of an inductive load.

[0025] In an optional implementation, the target topology structure adopts an ANPC topology structure.

[0026] The present disclosure also provides a device consistency test screening device, including:

[0027] A symmetrical layout module, used to set up parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars;

[0028] A drive signal consistency setting module, used to set the gate signal wiring length corresponding to each IGBT module to be consistent;

[0029] A parameter screening module, used to select a target topology structure corresponding to the IGBT module and screen a target IGBT module that meets preset parameter indicators;

[0030] The single and double pulse test module is used to perform single and double pulse tests on the target IGBT module to determine whether the static average current and dynamic average current corresponding to the target IGBT module are both less than a preset average current threshold.

[0031] In an optional implementation manner, the symmetric layout module is specifically used for:

[0032] For the IGBT module in the four-parallel mode, every two branches are connected in parallel with copper bars, and then a bus is led out from the middle of the parallel copper bars;

[0033] For the IGBT module in three-parallel mode, the path from each branch to the AC side reactor is set to be consistent.

[0034] An embodiment of the present disclosure also provides an electronic device, including: a processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor and the memory communicate through the bus, and when the machine-readable instructions are executed by the processor, the above-mentioned device consistency test screening method, or steps in any possible implementation of the above-mentioned device consistency test screening method are performed.

[0035] An embodiment of the present disclosure further provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the computer program executes the above-mentioned device consistency test screening method, or the steps in any possible implementation of the above-mentioned device consistency test screening method.

[0036] The embodiments of the present disclosure also provide a computer program product, including a computer program / instruction, which, when executed by a processor, implements the above-mentioned device consistency test screening method, or the steps in any possible implementation of the above-mentioned device consistency test screening method.

[0037] The disclosed embodiment provides a device consistency test screening method, apparatus and electronic device, which are arranged by setting parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars; setting the gate signal wiring length corresponding to each IGBT module to be consistent; selecting the target topology structure corresponding to the IGBT module, and screening the target IGBT module that meets the preset parameter index; performing single and double pulse tests on the target IGBT module, and determining that the static average current and dynamic average current corresponding to the target IGBT module are both less than the preset average current threshold. The consistency of the IGBT module can be improved through topology optimization design, multi-parameter screening and comprehensive performance testing, thereby improving the reliability and efficiency of the converter system.

[0038] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following is a brief introduction to the drawings required for use in the embodiments. The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can also be obtained based on these drawings without creative work.

[0040] Figure 1 A flow chart of a device consistency test screening method provided by an embodiment of the present disclosure is shown;

[0041] Figure 2 A flow chart showing another device consistency test screening method provided by an embodiment of the present disclosure is shown;

[0042] Figure 3 A schematic diagram of a device consistency test screening apparatus provided by an embodiment of the present disclosure is shown;

[0043] Figure 4 A schematic diagram of an electronic device provided by an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical scheme and advantages of the embodiments of the present disclosure clearer, the technical scheme in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments. The components of the embodiments of the present disclosure generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present disclosure provided in the drawings is not intended to limit the scope of the present disclosure for protection, but merely represents the selected embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present disclosure.

[0045] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0046] The term "and / or" herein only describes an association relationship, indicating that three relationships may exist. For example, A and / or B may represent the following three situations: A exists alone, A and B exist at the same time, and B exists alone. In addition, the term "at least one" herein represents any combination of at least two of any one or more of a plurality of. For example, including at least one of A, B, and C may represent including any one or more elements selected from the set consisting of A, B, and C.

[0047] Research has found that in the existing technology, the consistency problem of IGBT modules is usually partially compensated by optimizing the drive circuit design or busbar layout. However, this method is subject to the parameter differences of the module itself and cannot fundamentally solve the problem of uneven current. In addition, some studies have attempted to improve consistency by screening IGBT modules, but the existing screening standards are mostly based on a single parameter, and do not fully consider the combined impact of multiple parameters and their performance in actual applications, making it difficult to meet the requirements of high-power converters.

[0048] Based on the above research, the present disclosure provides a device consistency test screening method, device and electronic equipment, by setting parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars; setting the gate signal wiring length corresponding to each IGBT module to be consistent; selecting the target topology structure corresponding to the IGBT module, and screening the target IGBT module that meets the preset parameter index; performing single and double pulse tests on the target IGBT module, and determining that the static average current and dynamic average current corresponding to the target IGBT module are both less than the preset average current threshold. The consistency of the IGBT module can be improved through topology optimization design, multi-parameter screening and comprehensive performance testing, thereby improving the reliability and efficiency of the converter system.

[0049] To facilitate understanding of the present embodiment, a device consistency test screening method disclosed in the embodiment of the present disclosure is first introduced in detail. The execution subject of the device consistency test screening method provided in the embodiment of the present disclosure is generally a computer device with certain computing capabilities, and the computer device includes, for example: a terminal device or a server or other processing device, and the terminal device can be a user equipment (User Equipment, UE), a mobile device, a user terminal, a terminal, a cellular phone, a cordless phone, a personal digital assistant (Personal Digital Assistant, PDA), a handheld device, a computing device, a vehicle-mounted device, a wearable device, etc. In some possible implementations, the device consistency test screening method can be implemented by a processor calling a computer-readable instruction stored in a memory.

[0050] See also Figure 1 FIG. 1 is a flow chart of a device consistency test screening method provided by an embodiment of the present disclosure, the method comprising steps S101 to S104, wherein:

[0051] S101 , setting parallel IGBT modules, wherein the IGBT modules are provided with uniformly symmetrical laminated busbars.

[0052] In specific implementation, in MW-level and above power units, the parallel connection of IGBT modules needs to optimize the structural symmetry of the current loop to ensure the uniformity of current distribution between modules. By optimizing the structure of the current loop, the current path length and impedance distribution of each parallel module are made as consistent as possible to reduce static and dynamic current unevenness.

[0053] Here, the busbars of the parallel modules adopt a multi-layer stacking structure, with each layer transmitting positive, negative and signals respectively, ensuring the same electromagnetic coupling between different layers. The relative positions between the positive and negative busbars remain completely symmetrical to reduce the difference in parasitic inductance. The distance from each parallel module to the connection point of the busbar remains equal to avoid uneven current distribution due to differences in path length.

[0054] The confluence point is the location where the currents of multiple modules converge. At the confluence point, ensure that the current path length and electrical impedance are completely symmetrical. For the IGBT module in four-parallel mode, connect each two branches in parallel with a copper busbar, and then lead the busbar out from the middle of the parallel copper busbar; for the IGBT module in three-parallel mode, set the path from each branch to the AC side reactor to be consistent. This design reduces the path difference between modules and ensures uniform current distribution.

[0055] It should be noted that in the selection of copper busbar materials, high conductivity materials (such as pure copper or copper alloy) are used to reduce resistance and improve current transmission efficiency. The parasitic inductance of the current loop directly affects the consistency of dynamic current distribution. By arranging the positive and negative busbars in parallel to form a compact loop, the inductance effect during current switching can be reduced, or the path of the current loop can be shortened as much as possible to reduce the impact of parasitic inductance on current sharing.

[0056] Preferably, the connection point of each module is completely consistent with the busbar, including the position, area, thickness, etc. of the welding point, to ensure symmetry of the electrical characteristics. In the parallel structure, some modules may have too long connection paths due to physical layout, forming "long branches". This asymmetry will significantly affect the current distribution, so it is necessary to avoid the long branch phenomenon through reasonable layout design.

[0057] For example, for the IGBT module in four-parallel mode, a dual-module bus design is adopted. Every two modules are connected in parallel through equal-length copper bars, and then they are respectively connected to the middle of the busbar. The path length and resistance from the module to the load are exactly the same, ensuring the current uniformity under dynamic conditions. For the IGBT module in three-parallel mode, the modules are arranged in a triangle, and the path length from the connection copper bar of each module to the busbar is equal. Through the symmetrical lead-out design, the electrical path from the module to the load is guaranteed to be consistent.

[0058] S102: Set the gate signal wiring length corresponding to each IGBT module to be consistent.

[0059] In specific implementation, in the design of parallel IGBT modules, the consistency of the driving signal directly affects the switching synchronization and current sharing performance of the IGBT module. The driving signal mainly refers to the transmission and control of the gate (Gate-Emitter, GE) signal.

[0060] Here, driving capability refers to the ability of the driving circuit to apply control signals to the IGBT gate, including parameters such as signal amplitude, rise and fall time, and driving current. To ensure that the driving capability meets the design requirements, sufficient driving current, precise control of driving voltage, and avoidance of overdriving and underdriving are required.

[0061] Among them, the IGBT gate has a capacitive characteristic, which requires charging and discharging when switching. Insufficient driving current will cause switching delays and affect the dynamic current sharing performance. According to the total gate capacitance of the parallel IGBT modules, the driving current requirement is calculated; the driving current is usually selected to quickly complete the gate charging and discharging to ensure the switching speed; the driving current value is generally 10-20 times the charging requirement of the gate capacitance, which is determined by the module parameters. The gate opening and closing voltages of the IGBT need to be precisely controlled to avoid asynchrony between modules. The gate opening voltage (such as +15V) and the turn-off voltage (such as -8V) need to be within the design value range without obvious deviation. Use a high-precision voltage regulator to ensure the stability of the driving voltage. However, excessive driving voltage will increase switching losses and may even damage the IGBT. Too low driving voltage will cause inconsistent switching speeds, resulting in dynamic uneven current sharing. Add protection circuits, such as clamping circuits or voltage regulators, to the drive circuit to limit the driving voltage within a safe range.

[0062] Furthermore, the different transmission path lengths of GE signals will introduce propagation delay differences, resulting in asynchronous module switching times. Under dynamic conditions, inconsistent switching sequences will cause current fluctuations, increasing the risk of uneven current in parallel IGBT modules. Therefore, it is necessary to keep the wiring length of the gate drive signals of all parallel IGBTs from the drive circuit output to the IGBT gate input consistent. Through wiring adjustment or compensation technology, the electrical length of all paths is equal.

[0063] Here, in the PCB design, the driving signal lines are arranged as serpentine lines of equal length. For example, if a signal path is shorter, its bends are increased to extend the path length; based on the longest path, other paths are adjusted to match their lengths. In the layout, the driver and IGBT module are placed symmetrically as much as possible to reduce wiring complexity.

[0064] For example, for the IGBT module in four parallel mode, the output point of the driving circuit is located in the center of the PCB, and the GE signal is output to the four IGBT modules respectively. The serpentine wiring technology is used to ensure that the length of the four driving signal lines from the output point to the gate input terminal is exactly the same, and a shielding layer is added to each signal line, and decoupling capacitors are arranged at key positions to reduce noise interference. For the IGBT module in three parallel mode, the differential driving signal is transmitted to the three module gates through equal-length wire pairs respectively, using shielded differential wire pairs, and the driver and IGBT module are arranged in an equidistant triangle layout to optimize the wiring length.

[0065] S103 , selecting a target topology structure corresponding to the IGBT module, and screening a target IGBT module that meets preset parameter indicators.

[0066] In specific implementation, the topology refers to the specific connection method and current path design of the power circuit. The topology determines the current distribution method of the IGBT module, the switching timing of the IGBT module, the drive signal design, and the voltage and current distribution pattern during the commutation process. For a specific topology, the control scheme optimizes the operating characteristics of the module through precise signal control (such as drive gate signal consistency).

[0067] Here, in MW-level and above power units, a three-level topology is usually used. The NPC1 topology is a classic three-level topology with a simple circuit but a long commutation path and large stray inductance, which can easily cause a large dv / dt and lead to inconsistent dynamic performance. It is suitable for low-power units or scenarios with low requirements for dv / dt. The NPC2 topology optimizes part of the commutation path and reduces the stray inductance generated during the commutation process, but there are still problems with dv / dt and uneven heat distribution, which is suitable for medium-power units. The ANPC topology adds two clamping IGBTs on the basis of the NPC structure, which significantly shortens the commutation path and significantly reduces the impact of stray inductance on dv / dt. Through a flexible clamping strategy, it optimizes heat distribution and improves dynamic current sharing performance. However, the circuit is slightly complex and the control strategy requirements are high. It is suitable for high power density scenarios (such as MW-level power units).

[0068] Preferably, the ANPC topology structure is adopted in the embodiment of the present application, which can effectively balance the dynamic performance of the module and is suitable for high-power applications when IGBT modules are connected in parallel.

[0069] Furthermore, after the target topology is determined, the IGBT module needs to undergo strict parameter screening to ensure the uniformity of module performance and avoid current sharing problems caused by inconsistent parameters. The IGBT module is composed of multiple chips in parallel, and the discreteness of its parameters will lead to performance differences between modules, including switching performance differences: affecting dynamic current sharing capability; conduction loss differences: affecting power distribution between modules; thermal characteristic differences: leading to uneven heat distribution and exacerbating local overheating problems. Through screening, it can be ensured that the module performance is within the preset parameter range, reduce current sharing errors, and improve system reliability.

[0070] Here, the preset parameters for screening generally include gate threshold voltage (Vth), transfer characteristics and equivalent transconductance. The deviation value between the gate threshold voltage corresponding to the screening IGBT module and the preset first voltage design value is not greater than the preset first voltage threshold; in the screening transfer characteristics, the deviation value between the gate voltage value corresponding to the IGBT module under the preset target current and the preset second voltage design value is not greater than the preset second voltage threshold; the deviation value between the equivalent transconductance corresponding to the screening IGBT module and the preset third voltage design value is not greater than the preset third voltage threshold.

[0071] Preferably, the gate threshold voltage is the turn-on voltage of the IGBT, which needs to be within the range of ±0.5V of the design value to ensure consistent switching timing between modules and avoid dynamic uneven current. For the transfer characteristics, the gate voltage at 25A current is tested, and it is required to be within the range of ±0.5V of the design value to evaluate the switching current capability of the module and avoid differences in module load distribution due to inconsistent transfer characteristics. The transconductance of the chip reflects its current transmission capability, and it is required to be within the range of ±0.5V of the design value to ensure consistent current transmission characteristics between modules.

[0072] Specifically, IGBT modules are selected by batch to minimize the performance differences between different production batches. Test parameters such as Vth, transfer characteristics, and transconductance of each module are tested using test equipment to eliminate modules that do not meet the preset indicators. The dynamic current sharing performance of the module is evaluated through single and double pulse tests to ensure that the current sharing error of the module under dynamic working conditions is less than 5%.

[0073] S104 , performing single and double pulse tests on the target IGBT module to determine whether the static average current and the dynamic average current corresponding to the target IGBT module are both less than a preset average current threshold.

[0074] In specific implementation, single and double pulse testing is an experimental method commonly used for power semiconductor devices (such as IGBT), which is divided into two modes: single pulse testing: used to measure the static characteristics of IGBT, such as on-state voltage drop and off-state current capability; double pulse testing: used to evaluate the dynamic characteristics of IGBT, such as switching speed, switching loss, and the influence of parasitic parameters (such as parasitic inductance and capacitance).

[0075] Here, the purpose of the single pulse test is to measure the static current sharing performance of the IGBT module. A single current pulse is applied to the module, and the current distribution of each parallel branch is recorded to evaluate whether the current distribution of each module is uniform in the stable conduction state and to detect the impact of the conduction voltage drop difference between modules on the static current sharing. The purpose of the double pulse test is to measure the dynamic current sharing performance of the IGBT module. First, the first pulse is applied to make the module enter the conduction state, and then the second pulse is applied to observe the current response of the module during the switching transient process, so as to test whether there is a dynamic current sharing error between modules during the opening and closing process and evaluate the switching loss distribution and dynamic performance consistency.

[0076] See also Figure 2 As shown, it is a flowchart of a device consistency test screening method provided by an embodiment of the present disclosure, the method includes steps S1041 to S1043, wherein:

[0077] S1041. Construct a single and double pulse test platform including a capacitor pool, a DC busbar, a pulse generator and an adjustable load inductor.

[0078] S1042. For the static current sharing test, the switching voltage corresponding to the target IGBT module and the on-current of each branch are collected through the single and double pulse test platform, and the branch current distribution coefficient corresponding to the branch on-current is determined to ensure the consistency of the static parameters of the target IGBT module.

[0079] S1043. For the dynamic current averaging test, the switching characteristic parameters of the target IGBT module during the switching process are collected through the single and double pulse test platform to ensure that the target IGBT module has consistency in dynamic parameters.

[0080] In the specific implementation, the capacitor pool is used to generate the large current required for the pulse test; the DC bus is used to connect the capacitor pool and the test loop to form a low-impedance current path; the pulse generator is used to generate single and double pulse signals to control the on and off of the target IGBT module to simulate the actual working conditions; the adjustable load inductance is used to simulate the switching response of the inductive load.

[0081] Here, during the test, the system is initialized first, the various components in the test platform are connected, the circuit is complete and the contact is good, and the voltage, current and pulse width parameters of the pulse generator are set. During the single pulse test, a single pulse current signal is applied, the current value of each parallel IGBT branch is recorded, and the static current sharing is calculated; during the double pulse test, a double pulse current signal is applied, the current value of each branch during the opening and closing process is recorded, and the dynamic current sharing is calculated.

[0082] Among them, the static current distribution describes the uniformity of the current distribution of the parallel module in the on state, which is calculated by the ratio between the difference between the maximum and minimum currents of each branch and the average value of the current of each branch. The static current distribution should be lower than the preset threshold (such as 5%). The dynamic current distribution describes the uniformity of the current distribution of the parallel module during the transient process of opening and closing. It is calculated by the ratio between the difference between the maximum and minimum values ​​of the dynamic current and the average value of the dynamic current. The dynamic current distribution should be lower than the preset threshold (such as 5%).

[0083] The disclosed embodiment provides a device consistency test screening method, apparatus and electronic device, which are arranged by setting parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars; setting the gate signal wiring length corresponding to each IGBT module to be consistent; selecting the target topology structure corresponding to the IGBT module, and screening the target IGBT module that meets the preset parameter index; performing single and double pulse tests on the target IGBT module, and determining that the static average current and dynamic average current corresponding to the target IGBT module are both less than the preset average current threshold. The consistency of the IGBT module can be improved through topology optimization design, multi-parameter screening and comprehensive performance testing, thereby improving the reliability and efficiency of the converter system.

[0084] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

[0085] Based on the same inventive concept, a device consistency test screening apparatus corresponding to the device consistency test screening method is also provided in the embodiment of the present disclosure. Since the principle of solving the problem by the apparatus in the embodiment of the present disclosure is similar to the above-mentioned device consistency test screening method in the embodiment of the present disclosure, the implementation of the apparatus can refer to the implementation of the method, and the repeated parts will not be repeated.

[0086] See also Figure 3 , Figure 3 A schematic diagram of a device consistency test screening device provided by an embodiment of the present disclosure. Figure 3 As shown in , the device consistency test screening device 300 provided by the embodiment of the present disclosure includes:

[0087] The symmetrical layout module 310 is used to set up parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars.

[0088] The driving signal consistency setting module 320 is used to set the gate signal wiring length corresponding to each IGBT module to be consistent.

[0089] The parameter screening module 330 is used to select a target topology structure corresponding to the IGBT module and screen a target IGBT module that meets preset parameter indicators.

[0090] The single and double pulse test module 340 is used to perform a single and double pulse test on the target IGBT module to determine whether the static average current and the dynamic average current corresponding to the target IGBT module are both less than a preset average current threshold.

[0091] For descriptions of the processing flow of each module in the device and the interaction flow between each module, reference may be made to the relevant descriptions in the above method embodiment, which will not be described in detail here.

[0092] The disclosed embodiment provides a device consistency test screening method, apparatus and electronic device, which are arranged by setting parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars; setting the gate signal wiring length corresponding to each IGBT module to be consistent; selecting the target topology structure corresponding to the IGBT module, and screening the target IGBT module that meets the preset parameter index; performing single and double pulse tests on the target IGBT module, and determining that the static average current and dynamic average current corresponding to the target IGBT module are both less than the preset average current threshold. The consistency of the IGBT module can be improved through topology optimization design, multi-parameter screening and comprehensive performance testing, thereby improving the reliability and efficiency of the converter system.

[0093] Corresponds to Figure 1 and Figure 2 The device consistency test screening method in the present disclosure also provides an electronic device 400, such as Figure 4 FIG. 4 is a schematic diagram of the structure of an electronic device 400 provided in an embodiment of the present disclosure, including:

[0094] Processor 41, memory 42, and bus 43; memory 42 is used to store execution instructions, including memory 421 and external memory 422; memory 421 here is also called internal memory, which is used to temporarily store operation data in processor 41 and data exchanged with external memory 422 such as hard disk. Processor 41 exchanges data with external memory 422 through memory 421. When the electronic device 400 is running, the processor 41 communicates with the memory 42 through bus 43, so that the processor 41 executes Figure 1 and Figure 2 The steps of the device consistency test screening method in.

[0095] The embodiment of the present disclosure also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the device consistency test screening method described in the above method embodiment are executed. The storage medium can be a volatile or non-volatile computer-readable storage medium.

[0096] The present disclosure also provides a computer program product, which includes computer instructions. When the computer instructions are executed by a processor, the steps of the device consistency test screening method described in the above method embodiment can be executed. For details, please refer to the above method embodiment, which will not be repeated here.

[0097] The computer program product may be implemented in hardware, software or a combination thereof. In one optional embodiment, the computer program product is implemented as a computer storage medium. In another optional embodiment, the computer program product is implemented as a software product, such as a software development kit (SDK).

[0098] Those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here. In the several embodiments provided in the present disclosure, it should be understood that the disclosed device and method can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of the device or unit can be electrical, mechanical or other forms.

[0099] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0100] In addition, each functional unit in each embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0101] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present disclosure, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present disclosure. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0102] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present disclosure, which are used to illustrate the technical solutions of the present disclosure, rather than to limit them. The protection scope of the present disclosure is not limited thereto. Although the present disclosure is described in detail with reference to the above-described embodiments, ordinary technicians in the field should understand that any technician familiar with the technical field can still modify the technical solutions recorded in the above-described embodiments within the technical scope disclosed in the present disclosure, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present disclosure, and should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A device consistency test screening method, characterized in that: include: Arrange parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars; Setting the gate signal wiring length corresponding to each IGBT module to be consistent; Select a target topology structure corresponding to the IGBT module, and select a target IGBT module that meets preset parameter indicators; A single and double pulse test is performed on the target IGBT module to determine that a static average current and a dynamic average current corresponding to the target IGBT module are both less than a preset average current threshold.

2. The method according to claim 1, characterized in that The IGBT module is provided with a uniform and symmetrical laminated busbar, which specifically includes: For the IGBT module in the four-parallel mode, every two branches are connected in parallel with copper bars, and then a bus is led out from the middle of the parallel copper bars; For the IGBT module in three-parallel mode, the path from each branch to the AC side reactor is set to be consistent.

3. The method according to claim 1, characterized in that Screening target IGBT modules that meet preset parameter indicators, including: Screening that the deviation between the gate threshold voltage corresponding to the IGBT module and the preset first voltage design value is not greater than the preset first voltage threshold; In the screening transfer characteristic, the deviation between the gate voltage value corresponding to the IGBT module and the preset second voltage design value under the preset target current is not greater than the preset second voltage threshold; The deviation value between the equivalent transconductance corresponding to the IGBT module and a preset third voltage design value is screened to be no greater than a preset third voltage threshold.

4. The method according to claim 1, characterized in that: The single and double pulse tests are performed on the IGBT module, specifically including: Construct a single and double pulse test platform including a capacitor pool, a DC busbar, a pulse generator, and adjustable load inductance; For the test of the static current balance, the switch voltage corresponding to the target IGBT module and the on-current of each branch are collected through the single and double pulse test platform, and the branch current distribution coefficient corresponding to the branch on-current is determined to ensure that the static parameters of the target IGBT module are consistent; For the test of the dynamic current balance, the switching characteristic parameters of the target IGBT module during the switching process are collected through the single and double pulse test platform to ensure that the target IGBT module has consistency in dynamic parameters.

5. The method according to claim 4, characterized in that: The capacitor pool is used to generate the large current required for the pulse test; The DC busbar is used to connect the capacitor pool and the test loop to form a low-impedance current path; The pulse generator is used to generate single and double pulse signals to control the on and off of the target IGBT module to simulate actual working conditions; The adjustable load inductance is used to simulate the switching response of an inductive load.

6. The method according to claim 1, characterized in that: The target topology structure adopts an ANPC topology structure.

7. A device consistency test screening device, characterized in that: include: A symmetrical layout module, used to set up parallel IGBT modules, wherein the IGBT modules are provided with uniform and symmetrical laminated busbars; A drive signal consistency setting module, used to set the gate signal wiring length corresponding to each IGBT module to be consistent; A parameter screening module, used to select a target topology structure corresponding to the IGBT module and screen a target IGBT module that meets preset parameter indicators; The single and double pulse test module is used to perform single and double pulse tests on the target IGBT module to determine whether the static average current and dynamic average current corresponding to the target IGBT module are both less than a preset average current threshold.

8. The device according to claim 7, characterized in that The symmetric layout module is specifically used for: For the IGBT module in the four-parallel mode, every two branches are connected in parallel with copper bars, and then a bus is led out from the middle of the parallel copper bars; For the IGBT module in three-parallel mode, the path from each branch to the AC side reactor is set to be consistent.

9. An electronic device, characterized in that: include: A processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor and the memory communicate via the bus, and when the machine-readable instructions are executed by the processor, the steps of the device consistency test screening method as described in any one of claims 1 to 6 are performed.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the device consistency test screening method according to any one of claims 1 to 6 are executed.

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