Semiconductor structure and preparation method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a preparation method thereof, relates to the technical field of semiconductors, and aims to improve the yield of the semiconductor structure. The preparation method comprises the following steps: providing a substrate, and forming a dielectric layer on one side of the substrate; forming a mask layer on the dielectric layer; fixing the substrate on an electrostatic chuck in a plasma chamber; etching the dielectric layer based on the mask layer to form a dielectric pattern; and forming a waterproof film on the medium pattern, wherein the waterproof film covers the medium pattern. According to the embodiment of the invention, the waterproof film is used for protecting the dielectric pattern, the condition that the residues on the dielectric pattern absorb water to form reaction products which are difficult to remove is avoided, the influence on the morphology and size precision of the dielectric pattern is avoided, the defects of the semiconductor structure are reduced, and the yield of the semiconductor structure is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a semiconductor structure and a method for preparing the same. Background Art

[0002] In the semiconductor manufacturing industry, plasma processing equipment is generally used to prepare semiconductor structures. The plasma processing equipment includes a plasma chamber and an electrostatic chuck (ESC) located in the plasma chamber. The electrostatic chuck can support the semiconductor structure in the process through the electrostatic force of opposite charges.

[0003] However, after the dielectric pattern in the semiconductor structure is formed, difficult-to-remove residues are easily generated on the surface of the dielectric pattern in the ambient atmosphere of the plasma chamber, which seriously affects the morphology and dimensional accuracy of the dielectric pattern, thereby reducing the yield of the semiconductor structure. Summary of the invention

[0004] The embodiments of the present disclosure provide a semiconductor structure and a method for preparing the same, which are intended to improve the dimensional accuracy of a dielectric pattern in the semiconductor structure, improve the morphology of the dielectric pattern in the semiconductor structure, and improve the yield of the semiconductor structure.

[0005] To achieve the above objectives, the embodiments of the present disclosure adopt the following technical solutions:

[0006] In one aspect, a method for preparing a semiconductor structure is provided. The method comprises: providing a substrate, forming a dielectric layer on one side of the substrate; forming a mask layer on the dielectric layer; fixing the substrate on an electrostatic chuck in a plasma chamber; etching the dielectric layer based on the mask layer to form a dielectric pattern; and forming a waterproof film on the dielectric pattern, wherein the waterproof film covers the dielectric pattern.

[0007] The method for preparing a semiconductor structure provided by the embodiment of the present disclosure forms a dielectric pattern of the semiconductor structure in a plasma processing device, and forms a waterproof film on the dielectric pattern, so that the dielectric pattern can be protected by the waterproof film to prevent the residue on the dielectric pattern from absorbing water to form reaction products that are difficult to remove, avoid affecting the morphology and dimensional accuracy of the dielectric pattern, reduce defects in the semiconductor structure, and thus improve the yield of the semiconductor structure. In addition, due to the presence of the waterproof film, the interval time between the preparation of the dielectric pattern and the next process flow (such as a wet etching process, etc.) of the semiconductor structure can be extended, thereby eliminating the need to quickly transfer to the next process flow after the preparation of the dielectric pattern is completed.

[0008] In some embodiments, the waterproof membrane is a pure carbon membrane.

[0009] In some embodiments, the waterproof film has a thickness greater than or equal to 1 nm.

[0010] In some embodiments, forming a waterproof film on the dielectric pattern includes: introducing a target gas and an auxiliary gas into the plasma chamber; under the control of the plasma chamber, the auxiliary gas forms plasma; and the target gas forms the waterproof film on the dielectric pattern under the action of the plasma.

[0011] In some embodiments, the forming of a waterproof film on the dielectric pattern further includes: the electrostatic chuck releases static electricity under the action of the plasma; and the substrate is separated from the electrostatic chuck.

[0012] In some embodiments, the ratio of the flow rate of the target gas to the flow rate of the ionized gas ranges from 1:1 to 1:5.

[0013] In some embodiments, the time for introducing the target gas and the auxiliary gas into the plasma chamber is greater than or equal to 30 seconds.

[0014] In some embodiments, the target gas includes carbon monoxide or carbon dioxide.

[0015] In some embodiments, the forming of a waterproof film on the dielectric pattern further includes: the electrostatic chuck releases static electricity under the action of the plasma; and the substrate is separated from the electrostatic chuck.

[0016] In some embodiments, the preparation method further includes: moving the substrate out of the plasma chamber; and removing the waterproof film using an etching process.

[0017] On the other hand, a semiconductor structure is provided. The semiconductor structure is manufactured using any of the above-mentioned methods for manufacturing a semiconductor structure.

[0018] It can be understood that the beneficial effects that can be achieved by the semiconductor structure provided by the above embodiments of the present disclosure can refer to the beneficial effects of the method for preparing the semiconductor structure described above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required to be used in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the products involved in the embodiments of the present disclosure, the actual process of the method, etc.

[0020] Figure 1 is a structural diagram of an electronic device according to some embodiments of the present disclosure;

[0021] Figure 2 is a flow chart of a method for preparing a semiconductor structure according to some embodiments of the present disclosure;

[0022] Figure 3 to Figure 7 It is a structural diagram corresponding to each preparation step of a semiconductor structure according to some embodiments of the present disclosure;

[0023] Figure 8 is a structural diagram of a semiconductor structure according to an implementation manner;

[0024] Fig. 9 A structural diagram corresponding to the preparation steps of another semiconductor structure in some embodiments of the present disclosure;

[0025] Fig.10 A structural diagram corresponding to the preparation steps of another semiconductor structure in some embodiments of the present disclosure;

[0026] Fig.11 A schematic diagram of forming a pure carbon film according to some embodiments of the present disclosure;

[0027] Fig.12 is a structural diagram of a semiconductor structure according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0028] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0029] In the description of the present disclosure, it is necessary to understand that the orientations or positional relationships indicated by the terms "bottom", "inside", "outside", etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0030] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0031] When describing some embodiments, the term "connected" and its derivative expressions may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0032] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0033] In the context of this disclosure, the meanings of “on,” “above,” and “over” should be interpreted in the broadest manner, so that “on” means not only “directly on something,” but also includes the meaning of “on something” with intervening features or layers therebetween, and “above” or “over” means not only “above” or “over” something, but also includes the meaning of “above” or “over” something without intervening features or layers therebetween (i.e., directly on something).

[0034] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the areas of layers and the thicknesses of regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0035] As used herein, the term "substrate" refers to a material onto which subsequent layers of material may be added. The substrate itself may be patterned. The material added onto the substrate may be patterned or may remain unpatterned.

[0036] An embodiment of the present disclosure provides an electronic device. The electronic device may be a camera, a mobile phone, a tablet computer, a desktop computer, a laptop computer, a handheld computer, a notebook computer, an augmented reality (AR) device, a virtual reality (VR) device, an artificial intelligence (AI) device, a smart wearable device (e.g., a smart watch), an in-vehicle device, a smart home device, and / or a smart city device, etc., which require image acquisition. The embodiment of the present disclosure does not impose any special restrictions on the specific type of the electronic device.

[0037] like Figure 1 As shown, the electronic device 1000 includes a semiconductor structure 100 and a circuit board 200. The semiconductor structure 100 is electrically connected to the circuit board 200. The circuit board 200 can provide an electrical signal to the semiconductor structure 100, so that the semiconductor structure 100 can realize functions such as storing information and taking pictures.

[0038] The embodiment of the present disclosure provides a method for preparing a semiconductor structure 100. Figure 2 As shown, the preparation method includes: steps S100 to S500.

[0039] Step S100, as Figure 3 As shown, a substrate 11 is provided; a dielectric layer 12 is formed on one side of the substrate 11.

[0040] For example, the material of the substrate 11 may be sapphire, silicon carbide, silicon, zinc oxide, etc. The material of the dielectric layer 12 may be silicon dioxide (SiO 2 )wait.

[0041] The dielectric layer 12 covers one side surface of the substrate 11, and the dielectric layer 12 is a thin film as a whole. The thin film formed by silicon dioxide material has ideal insulation and compactness, and the chemical properties of silicon dioxide are stable, and it does not react with other acids except hydrofluoric acid. Therefore, the dielectric layer 12 is composed of silicon dioxide material, which can ensure the stability of the performance of the dielectric layer 12.

[0042] Figure 3 X in the figure represents the first direction, Y represents the second direction, and Z represents the third direction. The first direction X and the second direction Y may be perpendicular to each other, and the first direction X and the second direction Y are parallel to the plane where the substrate 11 is located. The third direction Z is perpendicular to the plane where the substrate 11 is located.

[0043] It is understandable that the semiconductor structure 100 may also include other film layers, such as a conductive layer, a semiconductor layer, an interlayer dielectric layer, an insulating layer, etc. The thin film formed by the silicon dioxide material may also be used as an interlayer dielectric layer, an insulating layer, etc. For the convenience of introduction, the present disclosure takes the thin film formed by the silicon dioxide material as an example to illustrate the dielectric layer.

[0044] Step S200, as Figure 4 As shown, a mask layer 13 is formed on the dielectric layer 12 .

[0045] For example, a mask film may be formed on the dielectric layer 12 first, and then the mask film may be patterned to obtain the mask layer 13 .

[0046] For example, the material of the mask layer 13 includes photoresist.

[0047] For example, the mask layer 13 may include at least one opening, and the opening may expose a portion of the dielectric layer 12 .

[0048] Step S300, as Figure 5 As shown, the substrate 11 is placed on an electrostatic chuck 320 of a plasma chamber 310 .

[0049] For example, the substrate 11 is placed in a plasma processing device 300. The plasma processing device 300 may include the plasma chamber 310, an electrostatic chuck 320, a reaction gas supply part 330, and the like.

[0050] Exemplarily, the plasma processing device 300 may be a capacitively coupled plasma (CCP) etching device. The plasma processing device 300 may also be an inductively coupled plasma (ICP) etching device or a microwave plasma etching device. The electrostatic chuck 320 may use electrostatic force to adsorb and fix the substrate 11 in the plasma chamber 310.

[0051] The reaction gas supply unit 330 is used to supply the reaction gas into the plasma chamber 310 .

[0052] The plasma chamber 310 is used to provide a space isolated from the outside, and to provide a space for etching the dielectric layer 12 on the substrate 11 .

[0053] Step S400, as Figures 4 to 6 As shown, based on the mask layer 13 , the dielectric layer 12 is etched to form a dielectric pattern 121 .

[0054] Exemplarily, a reaction gas is introduced into the plasma chamber 310 from the reaction gas supply unit 330. The reaction gas may be a carbon fluoride gas, such as carbon tetrafluoride, hexafluoroethane, etc. Under the action of the high frequency electric field in the plasma chamber 310, the reaction gas forms a plasma, and the plasma etches the portion of the dielectric layer 12 not covered by the mask layer 13 to form a dielectric pattern 121.

[0055] Exemplarily, after the dielectric pattern 121 is formed, the mask layer 13 on the dielectric pattern 121 is removed.

[0056] It is understandable that there are many structures of the dielectric pattern 121, which can be selected and set according to actual conditions. For example, the dielectric pattern 121 includes multiple dielectric sub-patterns, and the multiple dielectric sub-patterns are not connected, and there are gaps between the multiple dielectric sub-patterns. For another example, the dielectric pattern 121 has at least one opening. For the convenience of description, the embodiments of the present disclosure are described as follows: Figure 6 The structure of the dielectric pattern shown in (the dielectric pattern 121 has an opening or the dielectric pattern 121 has a hollow area) is taken as an example for description.

[0057] like Figure 6 and Figure 7 As shown, after the dielectric pattern 121 is formed, there is a residue K after etching on the surface of the dielectric pattern 121. The residue K is generally in a granular state and includes dielectric layer materials, reaction products of dielectric layer materials and reaction gases, etc. Specifically, the dielectric layer material is silicon dioxide, and the reaction products are silicon fluoride, silicon, and polymers P of silicon fluoride, such as fluorine-containing polysiloxane, etc. Among them, Figure 6 FIG. 1 is a schematic diagram showing that after the dielectric pattern 121 is formed, the residue K on the surface of the dielectric pattern 121 only includes dielectric layer material. Figure 7 FIG. 1 is a schematic diagram showing that the residue K on the surface of the dielectric pattern 121 includes dielectric layer materials and reaction products (polymer P of silicon fluoride) within a certain period of time after the dielectric pattern 121 is formed.

[0058] In one implementation, Figure 8As shown, after the dielectric pattern 121 is formed, the substrate needs to be removed from the plasma processing equipment or plasma chamber to perform the next preparation process such as wet etching. However, before the semiconductor structure performs the next preparation process, the silicon fluoride polymer P in the residue K easily absorbs water vapor in the environment to generate silica, which easily decomposes to form reaction products such as silicon dioxide S. The reaction product will be adsorbed on the surface of the dielectric pattern 121. The reaction product will form a thin film attached to the surface of the dielectric pattern 121. Since the reaction product is made of the same material as the dielectric pattern 121, the thin film is difficult to remove, which in turn affects the dimensional accuracy of the dielectric pattern and the surface morphology of the dielectric pattern, thereby reducing the yield of the semiconductor structure.

[0059] Based on this, the method for preparing the semiconductor structure 100 provided in some embodiments of the present disclosure further includes step S500.

[0060] Step S500, as Fig. 9 As shown, a waterproof film 14 is formed on the dielectric pattern 121 , and the waterproof film 14 covers the dielectric pattern 121 .

[0061] Exemplarily, the waterproof film 14 covers the outer surface of the dielectric pattern 121, that is, the waterproof film 14 covers the upper surface and the side surface of the dielectric pattern 121. Of course, in the opening of the dielectric pattern 121, the waterproof film 14 can be disconnected, and can also cover the surface of the substrate 11 exposed by the opening.

[0062] The waterproof film 14 protects the dielectric pattern 121, isolates the dielectric pattern 121 from the outside world, prevents water vapor from contacting the residue K (especially the polymer P) on the surface of the dielectric pattern 121, and prevents the residue K from forming silicon dioxide through water absorption and decomposition, thereby improving the dimensional accuracy of the dielectric pattern 121, improving the morphology of the dielectric pattern 121, reducing the possibility of defects on the semiconductor structure 100, and improving the yield of the semiconductor structure 100.

[0063] Understandably, Figure 6 to Figure 9 The structure of the semiconductor structure 100 shown is carried out in a plasma chamber 310 of a plasma processing device 300, and the substrate 11 is adsorbed on an electrostatic chuck 320. In order to clearly reflect the structure of the semiconductor structure 100, Figure 6 to Figure 8 The structure of the plasma chamber 310 and the electrostatic chuck 320 are not shown in the structural diagram. Fig. 9 The structure of the plasma chamber 310 is not shown.

[0064] The method for preparing the semiconductor structure 100 provided by the embodiment of the present disclosure forms the dielectric pattern 121 of the semiconductor structure 100 in the plasma processing device 300, and forms the waterproof film 14 on the dielectric pattern 121, so that the dielectric pattern 121 can be protected by the waterproof film 14, so as to prevent the residue K on the dielectric pattern 121 from absorbing water to form a reaction product that is difficult to remove, and to avoid affecting the morphology and dimensional accuracy of the dielectric pattern 121, thereby reducing the defects of the semiconductor structure 100 and improving the yield of the semiconductor structure 100. In addition, due to the presence of the waterproof film 14, the interval time between the preparation of the dielectric pattern 121 and the next process flow (such as a wet etching process, etc.) of the semiconductor structure 100 can be extended, and there is no need to quickly transfer to the next process flow after the preparation of the dielectric pattern 121 is completed.

[0065] In some embodiments, the waterproof membrane 14 is a pure carbon membrane.

[0066] For example, the material of the waterproof membrane 14 only includes carbon element, and the material of the waterproof membrane 14 is single carbon.

[0067] Using a pure carbon film as the waterproof film 14 can effectively isolate external water vapor from the surface of the protective medium pattern 121, thereby achieving a better anti-water absorption effect.

[0068] In some embodiments, the waterproof film 14 has a thickness greater than or equal to 1 nm.

[0069] Setting the thickness of the waterproof film 14 within the above range can ensure the barrier effect of the waterproof film 14 on water vapor, reduce the possibility of contact between the dielectric pattern 121 and water vapor, improve the dimensional accuracy of the dielectric pattern 121, improve the morphology of the dielectric pattern 121, and thus improve the yield of the semiconductor structure 100.

[0070] Exemplarily, the thickness of the waterproof film 14 may range from 1 nm to 15 nm, from 1 nm to 10 nm, from 3 nm to 33 nm, from 10 nm to 30 nm, or from 10 nm to 50 nm.

[0071] For example, the thickness of the waterproof film 14 may be 1 nm, 3 nm, 5 nm, 15 nm, 25 nm, or 35 nm.

[0072] In some embodiments, in the above S500 , forming the waterproof film 14 on the dielectric pattern 121 includes: steps S510 to S520 .

[0073] In step S510 , a target gas and an auxiliary gas are introduced into the plasma chamber 310 .

[0074] In step S520 , under the control of the plasma chamber 310 , the auxiliary gas forms plasma; under the action of the plasma, the target gas forms a waterproof film on the dielectric pattern 121 .

[0075] Exemplarily, the high-frequency electric field function of the plasma processing equipment 300 is turned on, and the auxiliary gas forms plasma in the high-frequency electric field. The plasma breaks the chemical bonds of the target gas to form free radicals. The free radicals combine with each other and are deposited on the surface of the dielectric pattern 121 to form a waterproof film 14.

[0076] For example, the auxiliary gas may be argon (Ar) or nitrogen (N 2 )wait.

[0077] In some examples, the target gas includes carbon, so that the formed waterproof film 14 can be guaranteed to contain carbon, so that the waterproof film 14 has a better water vapor isolation effect.

[0078] Exemplarily, the target gas includes an inorganic gas, which includes carbon monoxide or carbon dioxide.

[0079] For example, carbon monoxide (CO) or carbon dioxide (CO 2 ) is broken to form carbon free radicals, which are combined with each other to form a carbon single substance, thereby forming a waterproof film 14 on the surface of the dielectric pattern 121.

[0080] Take argon as the auxiliary gas and carbon monoxide as the target gas as an example. Fig.11 As shown, argon gas forms argon ions (Ar + ), argon ions open the carbon-oxygen bond of carbon monoxide (CO) to form carbon free radicals and oxygen free radicals. The carbon free radicals combine with each other and deposit on the surface of the dielectric pattern to form a pure carbon film.

[0081] The ratio of the flow rate of the target gas to the flow rate of the auxiliary gas is in the range of 1:1 to 1:5. Thus, a sufficient amount of auxiliary gas can form plasma, so that a sufficient amount of target gas is acted upon by the auxiliary gas, thereby ensuring that the formed waterproof film 14 has a certain thickness, so that the formed waterproof film 14 can isolate the contact between the external water vapor and the dielectric pattern 121, and ensure the isolation effect of the waterproof film 14.

[0082] Exemplarily, the ratio of the flow rate of the target gas to the flow rate of the auxiliary gas ranges from 1:1 to 1:2, 1:1 to 1:3, 1:2 to 1:3, 1:2 to 1:5, or 1:3 to 1:5. For example, the ratio of the flow rate of the target gas to the flow rate of the auxiliary gas is 1:1, 1:2, 1:3, 1:4, or 1:5. For example, the flow rate of the target gas may be 200 sccm, and the flow rate of the auxiliary gas may be 500 sccm or 900 sccm.

[0083] Exemplarily, the time for introducing the target gas and the auxiliary gas into the plasma chamber 310 is greater than or equal to 30 seconds.

[0084] In this way, the target gas and the auxiliary gas can have sufficient mass and sufficient reaction time, so that the target gas and the auxiliary gas can fully react, ensuring that the thickness of the formed waterproof film 14 is large, thereby ensuring the isolation of the surface of the medium pattern 121 from water vapor, and further ensuring the morphology and dimensional accuracy of the medium pattern 121, thereby improving the yield of the semiconductor structure 100.

[0085] For example, the time for introducing the target gas and the auxiliary gas into the plasma chamber 310 may be 30 s, 60 s, 100 s, 300 s or 400 s.

[0086] In the preparation method for forming the waterproof film 14, various parameters of the plasma treatment equipment can be set as shown in Table 1 below.

[0087] Table 1

[0088] project CO(sccm) <![CDATA[N 2 (sccm)]]> Ar(sccm) Time(s) Waterproof membrane thickness (nm) Experiment 1 500 / 500 300 32.75 Experiment 2 200 900 / 300 9.70 Experiment 3 200 / 500 300 19.60

[0089] In Table 1, CO is used as the target gas, N 2 Or Ar is the auxiliary gas, the time of passing the target gas and the auxiliary gas or the reaction time is 300s, and the pure carbon film thickness refers to the average thickness of the waterproof film. Specifically, in Experiment 1, the flow rate of CO is set to 500sccm, the flow rate of Ar is set to 500sccm, and the reaction time is set to 300s. After the reaction is completed, it is measured that the formed waterproof film is a pure carbon film, and the thickness of the pure carbon film is 32.75nm. In Experiment 2, the flow rate of CO is 200sccm, N 2 The flow rate is 900sccm, and the reaction time is 300s. After the reaction is completed, it is measured that the formed waterproof film is a pure carbon film, and the thickness of the pure carbon film is 9.70nm. In Experiment 3, the flow rate of CO is 200sccm, the flow rate of Ar is 500sccm, and the reaction time is 300s. After the reaction is completed, it is measured that the formed waterproof film is a pure carbon film, and the thickness of the pure carbon film is 19.60nm. Therefore, the semiconductor structure formed by the preparation method provided by some of the above embodiments of the present disclosure can form a waterproof film on the surface of the dielectric pattern 121, and the waterproof film is a pure carbon film, and the pure carbon film has a certain thickness, thereby isolating the dielectric pattern 121 from external water vapor.

[0090] Exemplarily, the process of forming the waterproof film 14 can be performed simultaneously with the process of releasing static electricity from the electrostatic chuck 320 . For example, in the step S500 , the waterproof film 14 is formed on the dielectric pattern 121 , and further includes steps S530 to S540 .

[0091] Step S530, as Fig. 9 As shown, the electrostatic chuck 320 releases static electricity under the action of plasma.

[0092] For example, the static electricity release function of the plasma processing device 200 is turned on, and static electricity on the electrostatic chuck 320 is released under the action of plasma.

[0093] In step S540 , the substrate 11 is separated from the electrostatic chuck 320 .

[0094] By adopting the above-mentioned preparation method, the static electricity on the electrostatic chuck 320 can be released more fully, avoiding residual static electricity on the electrostatic chuck 320 when the substrate 11 is separated from the electrostatic chuck 320, thereby reducing the possibility of fragmentation of the substrate 11 and the dielectric pattern 121 and improving the uniformity of the processing of the semiconductor structure 100.

[0095] In some embodiments, the preparation method further includes: steps S600 to S700.

[0096] In step S600 , the substrate 11 is moved out of the plasma chamber 310 .

[0097] Step S700, as Fig.10 As shown, the waterproof film 14 is removed by using an etching process.

[0098] For example, hydrogen peroxide (H 2 O 2 ) and sulfuric acid (H 2 SO 4 ) as an etching solution to etch the waterproof film 14. The waterproof film 14 reacts chemically with hydrogen peroxide and sulfuric acid to generate carbon dioxide, water, sulfur dioxide, etc., thereby removing the waterproof film. Of course, dimethyl sulfoxide ((CH 3 ) 2 SO) and dimethyl sulfoxide (C 6 H 15 NO 3 ) as an etching solution to etch the water-repellent film 14. The water-repellent film 14 chemically reacts with dimethyl sulfoxide and dimethyl sulfoxide to generate water and carbon dioxide, thereby removing the water-repellent film.

[0099] By adopting the above preparation method, the waterproof film 14 and the residue K on the dielectric pattern 121 can be removed simultaneously, thereby ensuring the dimensional accuracy of the dielectric pattern 121, improving the morphology of the dielectric pattern 121, avoiding defects in the semiconductor structure 100, and improving the yield of the semiconductor structure 100.

[0100] The embodiment of the present disclosure further provides a semiconductor structure 100, such as Fig.12 As shown, the semiconductor structure 100 is manufactured by the manufacturing method described in the above embodiment. The semiconductor structure 100 can be applied to the electronic device 1000 in the above embodiment.

[0101] The beneficial effects of the semiconductor structure 100 provided by the above-mentioned embodiment of the present disclosure can be referred to the beneficial effects of the method for preparing the semiconductor structure 100 described above, which will not be described in detail here.

[0102] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for preparing a semiconductor structure, characterized in that: The preparation method comprises: Providing a substrate, and forming a dielectric layer on one side of the substrate; forming a mask layer on the dielectric layer; fixing the substrate on an electrostatic chuck in a plasma chamber; Based on the mask layer, etching the dielectric layer to form a dielectric pattern; A waterproof film is formed on the medium pattern, and the waterproof film covers the medium pattern.

2. The preparation method according to claim 1, characterized in that: The waterproof film is a pure carbon film.

3. The preparation method according to claim 1, characterized in that: The thickness of the waterproof film is greater than or equal to 1 nm.

4. The preparation method according to claim 1, characterized in that: The step of forming a waterproof film on the medium pattern comprises: introducing target gas and auxiliary gas into the plasma chamber; Under the control of the plasma chamber, the auxiliary gas forms plasma; under the action of the plasma, the target gas forms the waterproof film on the medium pattern.

5. The preparation method according to claim 4, characterized in that: The ratio of the flow rate of the target gas to the flow rate of the auxiliary gas is in the range of 1:1 to 1:

5.

6. The preparation method according to claim 4, characterized in that: The target gas and the auxiliary gas are introduced into the plasma chamber for a time greater than or equal to 30 seconds.

7. The preparation method according to claim 4, characterized in that: The target gas includes carbon monoxide or carbon dioxide.

8. The preparation method according to any one of claims 4 to 7, characterized in that: The step of forming a waterproof film on the medium pattern further comprises: The electrostatic chuck releases static electricity under the action of the plasma; The substrate is separated from the electrostatic chuck.

9. The preparation method according to claim 8, characterized in that: The preparation method further comprises: moving the substrate out of the plasma chamber and removing the waterproof film by an etching process.

10. A semiconductor structure, characterized in that: The semiconductor structure is formed by the preparation method according to any one of claims 1 to 9.

Images