Photo-assisted burn-after-reading electronic device and preparation method thereof

Abstract

The invention belongs to the technical field of electronic devices, and discloses a photo-assisted burn-after-reading electronic device and a preparation method thereof. The photo-assisted burn-after-reading electronic device sequentially comprises a Si / SiO2 wafer, an organic polymer semiconductor layer and a metal electrode layer from bottom to top, the organic polymer semiconductor layer comprises a blended polymer of P3HT and N2200, and the metal electrode layer comprises a source electrode and a drain electrode. According to the invention, the P3HT / N2200 blended polymer is adopted as a bipolar polymer material, so that bipolar regulation and control are realized, the advantage of polycarrier regulation and control is realized, the photoresponse characteristic is realized, the capability of information visibility is controlled by regulating and controlling light exposure, information reading can be carried out when light is added, information is erased after light is removed, and burning of information after reading is realized; and the information security is enhanced. The photo-assisted burn-after-reading electronic device disclosed by the invention is simple in structural design, and has a balanced electron hole transport characteristic, a high switch ratio and an excellent synaptic characteristic.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic devices, and in particular to a light-assisted self-destructing electronic device and a preparation method thereof. Background Art

[0002] In today's digital age, the speed, capacity and accuracy requirements of information processing and communication are constantly increasing. Phototransistors, as electronic devices that can convert optical signals into electrical signals, play a key role in information processing, transmission, image sensing, environmental monitoring and other fields. Traditional phototransistors often have a single polarity, which limits their performance and application range. The emergence of bipolar phototransistors can simultaneously process electrical signals of both positive and negative polarities, improve the flexibility and efficiency of signal processing, and meet the needs of the continuous development of information processing and communication technology. At present, electronic devices can use light as a data carrier through photoelectric information encoding to achieve high-speed and large-capacity data transmission (Adv. Funct. Mater 2024, 34, 2315323; Adv. Electron. Mater, 2024, 2400482; Nat. Commun 2022, 13, 6590). However, in the field of information security, exploring how to use light for secure transmission and access remains an important and ongoing topic. In addition, bipolar optoelectronic materials have problems such as harsh synthesis conditions, difficult performance control, poor processability and interface compatibility in device applications, which limit their widespread application.

[0003] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a light-assisted self-destructing electronic device, aiming to solve the problems of harsh synthesis conditions, difficult performance control and poor processability of bipolar optoelectronic materials used in existing electronic devices.

[0005] The technical solution of the present invention is as follows:

[0006] In a first aspect of the present invention, a light-assisted self-burning electronic device is provided, wherein the light-assisted self-burning electronic device comprises Si / SiO 2 A wafer, an organic polymer semiconductor layer and a metal electrode layer; the organic polymer semiconductor layer includes a blend of poly (3-hexylthiophene-2,5-diyl) and poly (2,7-bis (2-octyldodecyl) benzo (lmn) (3,8) o-diazophenanthroline-1,3,6,8 (2H,7H)-tetraketone-4,9-diyl) ((2,2') dithienyl-5,5'-diyl), denoted as P3HT / N2200 blend polymer; the metal electrode layer includes a source electrode and a drain electrode.

[0007] Optionally, in the organic polymer semiconductor layer, the mass concentration ratio of poly(3-hexylthiophene-2,5-diyl) to poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)((2,2')dithienyl-5,5'-diyl) is 1:1 to 1:3.

[0008] The second aspect of the present invention is to provide a method for preparing the light-assisted self-destructing electronic device, comprising the steps of:

[0009] Provide Si / SiO 2 wafer, the Si / SiO 2 The wafers are cleaned, dried and treated with UV-ozone;

[0010] Poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithienyl-5,5'-diyl), namely P3HT and N2200, are mixed and dissolved in chlorobenzene to prepare a polymer mixed solution of P3HT and N2200;

[0011] The P3HT and N2200 polymer mixed solution was placed on Si / SiO 2 After spin coating on the wafer, annealing treatment is performed to obtain a P3HT / N2200 blended polymer film, i.e., an organic polymer semiconductor layer;

[0012] The light-assisted flash-on electronic device is obtained by depositing a metal electrode layer on the organic polymer semiconductor layer using a thermal evaporation method.

[0013] Optionally, the steps of cleaning, drying and ultraviolet ozone treatment of the substrate include: using Decon90 solution to ultrasonically treat the substrate for 20-30 minutes, then ultrasonically rinsing it with deionized water for multiple times, drying it at 90-95°C for 40-60 minutes, and performing ultraviolet ozone treatment for 15-25 minutes.

[0014] Optionally, the concentration of the polymer mixed solution of P3HT and N2200 is 5-10 mg / ml.

[0015] Optionally, in the polymer mixed solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:1 to 1:3.

[0016] Preferably, in the polymer mixed solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:2.

[0017] Optionally, the spin coating rate is 1000-2000 rpm, and the spin coating time is 20-40 s.

[0018] Optionally, the temperature of the annealing treatment is 100-150° C., and the time of the annealing treatment is 20-50 min.

[0019] Optionally, the metal electrode layer includes a gold electrode layer, and the thickness of the gold electrode layer is 30-60 nm.

[0020] Beneficial effects:

[0021] The present invention provides a light-assisted self-incinerating electronic device and a preparation method thereof. By using a P3HT / N2200 blended polymer as a bipolar organic polymer material in an organic polymer semiconductor layer in the light-assisted self-incinerating electronic device, bipolar regulation can be achieved, and the device has the advantage of multi-carrier regulation. The P3HT / N2200 blended polymer has a light response characteristic and the ability to control information visibility by regulating light exposure. Information can be read when light is added, and the information is erased when the light is removed, so that the electronic device can achieve self-incineration of information only through physical regulation.

[0022] The light-assisted self-destructing electronic device avoids complicated circuit design, greatly saves production costs and enhances information security, and has balanced electron-hole transfer characteristics, a high switching ratio and excellent synaptic characteristics. Moreover, the preparation process of the light-assisted self-destructing electronic device is simple. Through a simple solution processing method, a bipolar organic polymer material with adjustable conductivity is prepared, which is conducive to the realization of large-scale preparation of electronic devices. The ability of the light-assisted self-destructing electronic device of the present invention to control information visibility through light exposure provides a dynamic and secure method for data protection, bringing huge potential for future development in data storage and secure communications. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 The schematic diagram of the structure of the light-assisted self-destructing electronic device manufactured in the embodiment of the present invention is shown.

[0024] Figure 2 The transfer characteristic curves of the light-assisted self-incinerating electronic devices prepared in Examples 1-3 of the present invention, wherein: (a) the mass concentration ratio of P3HT and N2200 is 1:1, (b) the mass concentration ratio of P3HT and N2200 is 1:2, and (c) the mass concentration ratio of P3HT and N2200 is 1:3.

[0025] Figure 3This is a test result diagram of the light-assisted self-destructing electronic device prepared in Example 1 of the present invention for its inhibitory postsynaptic current response capability under light assistance. DETAILED DESCRIPTION

[0026] The present invention provides a light-assisted self-burning electronic device and a method for preparing the same. To make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0027] Unless otherwise defined, all technical terms and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0028] An embodiment of the present invention provides a light-assisted self-burning electronic device, wherein the light-assisted self-burning electronic device comprises Si / SiO 2 A wafer, an organic polymer semiconductor layer and a metal electrode layer; the organic polymer semiconductor layer includes a blend of poly (3-hexylthiophene-2,5-diyl) (P3HT) and poly (2,7-bis (2-octyldodecyl) benzo (lmn) (3,8) o-phenanthroline-1,3,6,8 (2H,7H)-tetraketone-4,9-diyl) ((2,2') dithienyl-5,5'-diyl) (N2200), denoted as P3HT / N2200 blend polymer; the metal electrode layer includes a source electrode and a drain electrode.

[0029] In the light-assisted self-burning electronic device provided by the present invention, Si / SiO 2Si in the wafer is used as the gate voltage pole of the electronic device, and P3HT / N2200 blended polymer is used as a bipolar organic polymer material in the organic polymer semiconductor layer, which can realize bipolar regulation and has the advantage of multi-carrier regulation. The P3HT / N2200 blended polymer has a light response characteristic and the ability to control the visibility of information by regulating light exposure. Information can be read when light is added, and the information is erased after the light is removed, so the electronic device can realize the information burning after reading only by physical adjustment methods. Under the condition of light, the electronic device can realize the conversion between positive and negative photoconductivity by adjusting the polarity of the gate voltage, which provides the possibility of realizing highly reconfigurable circuits. Using this negative photoconductivity characteristic, light can be used for information encryption or destruction. Therefore, during the transmission and reading process, the information is more difficult to be deciphered, thereby enhancing information security communication. The electronic device that burns after reading avoids the complicated circuit design, has a simple structural design, greatly saves the production cost and enhances the security of information, and has balanced electron-hole transmission characteristics, high switching ratio and excellent synaptic characteristics.

[0030] In some embodiments, in the organic polymer semiconductor layer, the mass concentration ratio of P3HT to N2200 is 1:1 to 1:3.

[0031] Mixing P3HT and N2200 can achieve bipolar regulation, and reconfigurable photoconductivity can be achieved under light conditions, so that information can be securely transmitted through light as a carrier. If the P3HT / N2200 mass concentration ratio is too high or too low, it will lead to an imbalance of holes and electrons in the electronic device, resulting in a stronger or weaker polarity on one side. Long-term electron-hole imbalance may lead to reduced current gain and reduced reliability.

[0032] The embodiment of the present invention further provides a method for preparing the light-assisted self-destructing electronic device, comprising the steps of:

[0033] Provide Si / SiO 2 wafer, the Si / SiO 2 The wafers are cleaned, dried and treated with UV-ozone;

[0034] Poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)((2,2')dithienyl-5,5'-diyl), namely P3HT and N2200, are mixed and dissolved in chlorobenzene to prepare a polymer mixed solution of P3HT and N2200;

[0035] The P3HT and N2200 polymer mixed solution was placed on Si / SiO 2After spin coating on the wafer, annealing treatment is performed to obtain a P3HT / N2200 blended polymer film, i.e., an organic polymer semiconductor layer;

[0036] The light-assisted flash-on electronic device is obtained by depositing a metal electrode layer on the organic polymer semiconductor layer using a thermal evaporation method.

[0037] In some embodiments, the steps of cleaning, drying and ultraviolet ozone treatment of the substrate include: ultrasonically treating the substrate with Decon90 solution for 20-30 minutes, then ultrasonically rinsing it with deionized water for multiple times, drying it at 90-95°C for 40-60 minutes, and performing ultraviolet ozone treatment for 15-25 minutes.

[0038] In some embodiments, the concentration of the polymer mixed solution of P3HT and N2200 is 5-10 mg / ml.

[0039] In some embodiments, in the polymer mixed solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:1 to 1:3.

[0040] In some preferred embodiments, in the polymer mixed solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:2. The light-assisted flash electronic device has balanced electron-hole transport characteristics and a higher switching ratio when the mass concentration ratio of P3HT to N2200 is 1:2.

[0041] In some embodiments, the spin coating rate is 1000-2000 rpm, and the spin coating time is 20-40 s.

[0042] In some embodiments, the annealing treatment is carried out at a temperature of 100-150° C. and for a time of 20-50 min. The annealing treatment is used to promote effective condensation and densification of the P3HT / N2200 polymer blend.

[0043] In some embodiments, the metal electrode layer includes a gold electrode layer. Preferably, the gold electrode layer has a thickness of 30-60 nm.

[0044] The following describes it in detail through specific embodiments.

[0045] Example 1

[0046] (1)Si / SiO 2 Wafer

[0047] Use commercial Si / SiO 2The wafer is used as the substrate, where Si is the device gate electrode, and Si / SiO 2 The wafer is cut into 2cm×2cm pieces. 2 The wafer was cleaned by ultrasonic cleaning with Decon 90 solution for 20 minutes, and then ultrasonically rinsed with deionized water three times (20 minutes each time). After drying with a nitrogen stream, the substrate was placed in an oven and dried at 90°C for 40 minutes, and treated with ultraviolet ozone for 15 minutes.

[0048] (2) Organic polymer semiconductor layer

[0049] Commercial P3HT and N2200 materials were selected, and the P3HT and N2200 polymers were dissolved in chlorobenzene at a total mixed system concentration of 7.5 mg / ml to obtain a P3HT / N2200 blended polymer solution. Then, after ultrasonic treatment for 15 minutes, the P3HT / N2200 blended polymer solution with a mass concentration ratio of P3HT to N2200 of 1:2 was stirred at a speed of 2000 rpm on a Si / SiO 2 The wafer was spin-coated for 30 s and then annealed (125 °C, 40 min) to promote effective condensation and densification of the blend. 2 A P3HT / N2200 blend polymer film was obtained on the wafer.

[0050] (3) Metal electrode layer

[0051] Gold is selected as the electrode material, and then 50nm of gold is deposited as the source and drain on the P3HT / N2200 blended polymer film by thermal evaporation to form a metal electrode layer. Thus, the complete light-assisted read-and-burn electronic device structure is prepared. The structural schematic diagram of the light-assisted read-and-burn electronic device is shown in FIG. Figure 1 As shown, the device substrate (where Si is the gate electrode), the organic polymer semiconductor layer and the gold electrode layer (source and drain electrodes) are stacked in sequence from bottom to top.

[0052] Example 2

[0053] The only difference between this embodiment and embodiment 1 is that the mass concentration ratio of P3HT and N2200 is 1:1.

[0054] Example 3

[0055] The only difference between this embodiment and embodiment 1 is that the mass concentration ratio of P3HT to N2200 is 1:3.

[0056] The electrical properties of the light-assisted self-incineration electronic device prepared in Example 1 were tested by a Keysight B2902A digital source meter in an inert gas atmosphere.

[0057] The transfer characteristics test results of the light-assisted self-destructing electronic device in Examples 1-3 are as follows: Figure 2 As shown, Figure 2 (a), (b) and (c) correspond to the mass concentration ratios of P3HT and N2200 in the light-assisted self-incineration electronic device of 1:1, 1:2 and 1:3 respectively. Figure 2 It can be seen from the test results that the light-assisted self-incineration electronic device prepared in this embodiment has balanced electron-hole transport characteristics and a higher switching ratio when the mass concentration ratio of P3HT and N2200 is 1:2.

[0058] The test results of the electrical performance of the light-assisted self-burning electronic device in Example 1 under a gate voltage of 10V and light assistance are as follows: Figure 3 As shown. At a wavelength of 520nm and a light intensity of 96mW / cm 2 Under the light conditions of Figure 3 It can be seen from the test results that information can be read due to the increase in conductivity caused by the generation of electron-hole pairs, and information erasing operation can be achieved due to the capture of charges by deep defects at the interface, which causes the conductivity value to decrease after the light is removed. The light-assisted read-and-burn electronic device has the ability to read information and erase information after the light is removed, thereby significantly improving the security of data. The prepared light-assisted read-and-burn electronic device has the ability to read information under light and erase information after the light is removed, thereby significantly improving the security of data.

[0059] In summary, the embodiment of the present invention provides a light-assisted, self-destructing electronic device and a preparation method thereof. The present invention combines P3HT and N2200, and synthesizes a P3HT / N2200 polymer blend as a bipolar organic polymer thin film material by a simple solution processing method. These two materials are commercially available, low in cost, and simple in preparation method. They have good solubility and stability, which is conducive to the realization of large-scale preparation of electronic devices. At the same time, the P3HT / N2200 polymer blend has a light-responsive characteristic, and the ability to control the visibility of information by regulating light exposure. When light is added, the information can be read, and the information is erased after the light is removed. The device can realize the self-destructing of information by only physical adjustment methods. The light-assisted, self-destructing electronic device avoids the complicated circuit design, greatly saves the production cost and enhances the security of information. Based on the ability of the light-assisted, self-destructing electronic device to control the visibility of information through light exposure, a dynamic and secure method is provided for data protection, which brings great potential for future development in data storage and secure communication.

[0060] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A light-assisted self-destructing electronic device, characterized in that: The light-assisted self-burning electronic device includes, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer and a metal electrode layer; the organic polymer semiconductor layer includes a blend of poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)((2,2')dithienyl-5,5'-diyl), denoted as P3HT / N2200 blended polymer; the metal electrode layer includes a source electrode and a drain electrode.

2. The light-assisted self-destructing electronic device according to claim 1, characterized in that: In the organic polymer semiconductor layer, the mass concentration ratio of poly(3-hexylthiophene-2,5-diyl) to poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithienyl-5,5'-diyl) is 1:1 to 1:

3.

3. A method for preparing a light-assisted self-destructing electronic device according to claim 1 or 2, characterized in that: Includes steps: Providing a Si / SiO2 wafer, and cleaning, drying and ultraviolet ozone treating the Si / SiO2 wafer; Poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)((2,2')dithienyl-5,5'-diyl), namely P3HT and N2200, are mixed and dissolved in chlorobenzene to prepare a polymer mixed solution of P3HT and N2200; After the polymer mixed solution of P3HT and N2200 is spin-coated on a Si / SiO2 wafer, an annealing treatment is performed to obtain a P3HT / N2200 blended polymer film, i.e., an organic polymer semiconductor layer; The light-assisted flash-on electronic device is obtained by depositing a metal electrode layer on the organic polymer semiconductor layer using a thermal evaporation method.

4. The method for preparing a light-assisted self-destructing electronic device according to claim 3, characterized in that: The steps of cleaning, drying and ultraviolet ozone treatment of the substrate include: using Decon90 solution to ultrasonically treat the substrate for 20-30 minutes, then using deionized water to ultrasonically rinse for multiple times, drying at 90-95° C. for 40-60 minutes, and performing ultraviolet ozone treatment for 15-25 minutes.

5. The method for preparing a light-assisted self-destructing electronic device according to claim 3, characterized in that: The concentration of the polymer mixed solution of P3HT and N2200 is 5-10 mg / ml.

6. The method for preparing a light-assisted self-destructing electronic device according to claim 3, characterized in that: In the polymer mixed solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:1 to 1:

3.

7. The method for preparing a light-assisted self-destructing electronic device according to claim 6, characterized in that: In the polymer mixed solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:

2.

8. The method for preparing a light-assisted self-destructing electronic device according to claim 3, characterized in that: The speed of the spin coating is 1000-2000 rpm, and the time of the spin coating is 20-40 s.

9. The method for preparing a light-assisted self-destructing electronic device according to claim 3, characterized in that: The temperature of the annealing treatment is 100-150° C., and the time of the annealing treatment is 20-50 minutes.

10. The method for preparing a light-assisted self-destructing electronic device according to claim 3, characterized in that: The metal electrode layer includes a gold electrode layer, and the thickness of the gold electrode layer is 30-60 nm.

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