A light-assisted self-destructing electronic device and its fabrication method

Abstract

This invention belongs to the field of electronic device technology and discloses a light-assisted self-destructing electronic device and its fabrication method. The light-assisted self-destructing electronic device comprises, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer, and a metal electrode layer; the organic polymer semiconductor layer comprises a blend of P3HT and N2200, and the metal electrode layer comprises a source and a drain. This invention achieves bipolar modulation by using a P3HT / N2200 blend as a bipolar polymer material, exhibiting advantages in multi-carrier modulation and photoresponse characteristics. It allows control of information visibility by adjusting light exposure; information can be read when light is applied and erased when light is removed, achieving self-destruction and enhancing information security. The light-assisted self-destructing electronic device of this invention has a simple structural design, balanced electron-hole transport characteristics, a high on / off ratio, and excellent synaptic characteristics.

Description

Technical Field

[0001] This invention relates to the field of electronic device technology, and in particular to a light-assisted self-destructing electronic device and its preparation method. Background Technology

[0002] In today's digital age, the demands for speed, capacity, and accuracy in information processing and communication are constantly increasing. Phototransistors, as electronic devices capable of converting light signals into electrical signals, play a crucial role in information processing, transmission, image sensing, and environmental monitoring. Traditional phototransistors often have a single polarity, limiting their performance and application range. The emergence of bipolar phototransistors can simultaneously process electrical signals of both positive and negative polarities, improving the flexibility and efficiency of signal processing and meeting the ever-evolving needs of information processing and communication technologies. Currently, electronic devices can use photoelectric information encoding and light as a data carrier to achieve high-speed, high-capacity data transmission (Adv. Funct. Mater 2024, 34, 2315323; Adv. Electron. Mater, 2024, 2400482; Nat. Commun 2022, 13, 6590). However, in the field of information security, exploring how to utilize light for secure transmission and access remains an important and ongoing research topic. In addition, bipolar optoelectronic materials suffer from problems such as harsh synthesis conditions, difficulty in performance control, poor processability, and interface compatibility in device applications, which limit their widespread use.

[0003] Therefore, existing technologies still need to be improved and developed. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this invention is to provide a light-assisted self-destructing electronic device, which aims to solve the problems of harsh synthesis conditions, difficult performance control and poor processability of bipolar optoelectronic materials used in existing electronic devices.

[0005] The technical solution of the present invention is as follows:

[0006] In a first aspect, the present invention provides a light-assisted self-destructing electronic device, the light-assisted self-destructing electronic device comprising, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer, and a metal electrode layer; the organic polymer semiconductor layer comprises a blend of poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithienyl-5,5'-diyl), denoted as P3HT / N2200 blend polymer; the metal electrode layer comprises a source electrode and a drain electrode.

[0007] Optionally, in the organic polymer semiconductor layer, the mass concentration ratio of poly(3-hexylthiophene-2,5-diyl) to poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithienyl-5,5'-diyl) is 1:1 to 1:3.

[0008] A second aspect of the present invention is to provide a method for preparing the aforementioned optically assisted self-destructing electronic device, comprising the steps of:

[0009] A Si / SiO2 wafer is provided, and the Si / SiO2 wafer is cleaned, dried, and treated with ultraviolet ozone.

[0010] Poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithiophene-5,5'-diyl), i.e. P3HT and N2200, were mixed and dissolved in chlorobenzene to prepare a polymer mixed solution of P3HT and N2200.

[0011] After spin-coating the polymer mixture solution of P3HT and N2200 on a Si / SiO2 wafer, the mixture is annealed to obtain a P3HT / N2200 blended polymer film, i.e., an organic polymer semiconductor layer.

[0012] After depositing a metal electrode layer on the organic polymer semiconductor layer using a thermal evaporation method, the light-assisted self-destructible electronic device is obtained.

[0013] Optionally, the steps of cleaning, drying and ultraviolet ozone treatment of the substrate include: ultrasonically treating the substrate with Decon90 solution for 20-30 minutes, rinsing it multiple times with deionized water using ultrasound, drying it at 90-95°C for 40-60 minutes, and then performing ultraviolet ozone treatment for 15-25 minutes.

[0014] Optionally, the concentration of the polymer mixture of P3HT and N2200 is 5-10 mg / ml.

[0015] Optionally, in the polymer mixture solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:1 to 1:3.

[0016] Preferably, in the polymer mixture solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:2.

[0017] Optionally, the spin coating rate is 1000-2000 rpm, and the spin coating time is 20-40 s.

[0018] Optionally, the annealing temperature is 100-150℃, and the annealing time is 20-50 min.

[0019] Optionally, the metal electrode layer includes a gold electrode layer, the thickness of which is 30-60 nm.

[0020] Beneficial effects:

[0021] This invention provides a light-assisted self-destructing electronic device and its preparation method. By using a P3HT / N2200 blend polymer as a bipolar organic polymer material in the organic polymer semiconductor layer of the light-assisted self-destructing electronic device, bipolar modulation can be achieved, which has the advantage of multi-carrier modulation. The P3HT / N2200 blend polymer has photoresponsive characteristics and the ability to control the visibility of information by adjusting the light exposure. Information can be read when light is applied and erased when light is removed, so that the electronic device can achieve self-destructing of information by physical adjustment.

[0022] The described optically assisted self-destructing electronic device avoids complex circuit design, significantly reduces manufacturing costs, and enhances information security. It also possesses balanced electron-hole transport characteristics, a high on / off ratio, and excellent synaptic properties. Furthermore, the fabrication process of this optically assisted self-destructing electronic device is simple; a bipolar organic polymer material with tunable conductivity can be prepared through a simple solution treatment method, which is beneficial for large-scale fabrication of electronic devices. The ability of the optically assisted self-destructing electronic device of this invention to control information visibility through light exposure provides a dynamic and secure method for data protection, bringing enormous potential for future development in data storage and secure communication. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the structure of the optically assisted self-destructing electronic device prepared according to an embodiment of the present invention.

[0024] Figure 2 The graphs show the transfer characteristics of the optically assisted self-destructing electronic devices prepared in Examples 1-3 of this invention, where (a): the mass concentration ratio of P3HT to N2200 is 1:1, (b): the mass concentration ratio of P3HT to N2200 is 1:2, and (c): the mass concentration ratio of P3HT to N2200 is 1:3.

[0025] Figure 3 The figure shows the test results of the suppressive postsynaptic current response capability of the optically assisted self-destructive electronic device prepared in Embodiment 1 of the present invention under optical assistance. Detailed Implementation

[0026] This invention provides an optically assisted self-destructing electronic device and its fabrication method. To make the objectives, technical solutions, and effects of this invention clearer and more explicit, the invention is further described in detail below. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

[0028] This invention provides a light-assisted self-destructing electronic device, which comprises, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer, and a metal electrode layer; the organic polymer semiconductor layer comprises a blend of poly(3-hexylthiophene-2,5-diyl)(P3HT) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithienyl-5,5'-diyl)(N2200), denoted as P3HT / N2200 blend polymer; the metal electrode layer comprises a source electrode and a drain electrode.

[0029] In the optically assisted self-destructing electronic device provided by this invention, Si in the Si / SiO2 wafer serves as the gate voltage electrode of the electronic device. The organic polymer semiconductor layer uses a P3HT / N2200 blend polymer as a bipolar organic polymer material, enabling bipolar modulation and offering advantages in multi-carrier modulation. The P3HT / N2200 blend polymer possesses photoresponsive characteristics, allowing control over information visibility by adjusting light exposure. Information can be read when light is applied and erased when light is removed. Therefore, the electronic device achieves self-destructing information through physical adjustment. Under illumination, the device can switch between positive and negative photoconductivity by adjusting the polarity of the gate voltage, providing the possibility of highly reconfigurable circuits. Utilizing this negative photoconductivity, light can be used for information encryption or destruction. Therefore, information is more difficult to decipher during transmission and retrieval, thereby enhancing secure communication. The self-destructing electronic device avoids complex circuit design, has a simple structure, greatly saves manufacturing costs and enhances information security, and has balanced electron-hole transport characteristics, a high switching ratio and excellent synaptic characteristics.

[0030] In some embodiments, the mass concentration ratio of P3HT to N2200 in the organic polymer semiconductor layer is 1:1 to 1:3.

[0031] Mixing P3HT and N2200 enables bipolar modulation and a reconfigurable photoconductivity effect under illumination, allowing for secure information transmission via light. However, excessively high or low P3HT / N2200 mass concentration ratios can lead to an electron-hole imbalance in electronic devices, resulting in one side having a stronger or weaker polarity. Prolonged electron-hole imbalance can reduce current gain and decrease reliability.

[0032] This invention also provides a method for preparing the aforementioned optically assisted self-destructing electronic device, comprising the following steps:

[0033] A Si / SiO2 wafer is provided, and the Si / SiO2 wafer is cleaned, dried, and treated with ultraviolet ozone.

[0034] Poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithiophene-5,5'-diyl), i.e. P3HT and N2200, were mixed and dissolved in chlorobenzene to prepare a polymer mixed solution of P3HT and N2200;

[0035] After spin-coating the polymer mixture solution of P3HT and N2200 on a Si / SiO2 wafer, the mixture is annealed to obtain a P3HT / N2200 blended polymer film, i.e., an organic polymer semiconductor layer.

[0036] After depositing a metal electrode layer on the organic polymer semiconductor layer using a thermal evaporation method, the light-assisted self-destructible electronic device is obtained.

[0037] In some embodiments, the steps of cleaning, drying and ultraviolet ozone treatment of the substrate include: ultrasonically treating the substrate with Decon90 solution for 20-30 minutes, rinsing it multiple times with deionized water using ultrasound, drying it at 90-95°C for 40-60 minutes, and then performing ultraviolet ozone treatment for 15-25 minutes.

[0038] In some embodiments, the concentration of the polymer mixture of P3HT and N2200 is 5-10 mg / ml.

[0039] In some embodiments, the mass concentration ratio of P3HT to N2200 in the polymer mixed solution of P3HT and N2200 is 1:1 to 1:3.

[0040] In some preferred embodiments, the mass concentration ratio of P3HT to N2200 in the polymer mixture solution is 1:2. The optically assisted self-destructing electronic device exhibits balanced electron-hole transport characteristics and a high on / off ratio when the mass concentration ratio of P3HT to N2200 is 1:2.

[0041] In some embodiments, the spin coating rate is 1000-2000 rpm and the spin coating time is 20-40 s.

[0042] In some embodiments, the annealing treatment is performed at a temperature of 100-150°C for a duration of 20-50 minutes. The annealing treatment is used to promote effective condensation and densification of the P3HT / N2200 blend polymer.

[0043] In some embodiments, the metal electrode layer includes a gold electrode layer, preferably with a thickness of 30-60 nm.

[0044] The following detailed description uses specific examples.

[0045] Example 1

[0046] (1) Si / SiO2 wafer

[0047] Commercial Si / SiO2 wafers were selected as the substrate, with Si serving as the gate electrode of the device. The Si / SiO2 wafers were cut into 2cm×2cm pieces. The cut Si / SiO2 wafers were cleaned by first ultrasonically cleaning with Decon 90 solution for 20 minutes, then ultrasonically rinsing with deionized water three times (20 minutes each time), drying with nitrogen gas, and then placing the substrate in an oven to dry at 90°C for 40 minutes, followed by ultraviolet ozone treatment for 15 minutes.

[0048] (2) Organic polymer semiconductor layer

[0049] Commercially available P3HT and N2200 materials were selected. The P3HT and N2200 polymers were dissolved in chlorobenzene at a total mixed system concentration of 7.5 mg / ml to obtain a P3HT / N2200 blend polymer solution. After ultrasonic treatment for 15 minutes, the P3HT / N2200 blend polymer solution with a P3HT / N2200 mass concentration ratio of 1:2 was spin-coated on a Si / SiO2 wafer at 2000 rpm for 30 seconds. Annealing was then performed (125℃, 40 minutes) to promote effective condensation and densification of the blend, resulting in a P3HT / N2200 blend polymer film on the Si / SiO2 wafer.

[0050] (3) Metal electrode layer

[0051] Gold was selected as the electrode material. Then, 50nm gold was deposited as the source and drain electrodes on a P3HT / N2200 blend polymer film via thermal evaporation to form a metal electrode layer. This completed the fabrication of the complete optical-assisted self-destructing electronic device structure. A schematic diagram of the optical-assisted self-destructing electronic device is shown below. Figure 1 As shown, from bottom to top, the device substrate (where Si is the gate electrode), the organic polymer semiconductor layer, and the gold electrode layer (source and drain electrodes) are stacked sequentially.

[0052] Example 2

[0053] The only difference between this embodiment and Embodiment 1 is that the mass concentration ratio of P3HT to N2200 is 1:1.

[0054] Example 3

[0055] The only difference between this embodiment and Embodiment 1 is that the mass concentration ratio of P3HT to N2200 is 1:3.

[0056] The electrical performance of the optically assisted self-destructing electronic device prepared in Example 1 was tested using a Keysight B2902A digital source meter under an inert gas atmosphere.

[0057] The transfer characteristic test results of the optically assisted self-destructing electronic devices in Examples 1-3 are as follows: Figure 2 As shown, Figure 2 In the diagram, (a), (b), and (c) correspond to P3HT and N2200 mass concentration ratios of 1:1, 1:2, and 1:3 in optically assisted self-destructive electronic devices, respectively. Figure 2 The test results show that the optically assisted self-destructing electronic device prepared in this embodiment has balanced electron-hole transport characteristics and a high on / off ratio when the mass concentration ratio of P3HT to N2200 is 1:2.

[0058] The test results of the electrical performance of the optically assisted self-destructing electronic device in Example 1 under 10V gate voltage and optical assistance are as follows: Figure 3 As shown. At a wavelength of 520 nm and a light intensity of 96 mW / cm². 2 Under illumination, the organic polymer semiconductor layer of the light-assisted self-destructing electronic device is irradiated, converting information into characteristic current values. Figure 3The test results show that the increased conductivity due to the generation of electron-hole pairs enables information reading, while the decreased conductivity after light removal due to the capture of charges by deep defects at the interface enables information erasure. The optically assisted self-destructing electronic device has the ability to read information and erase information after light removal, thus significantly improving data security.

[0059] In summary, this invention provides a light-assisted self-destructing electronic device and its fabrication method. The invention utilizes a combination of P3HT and N2200, synthesizing a P3HT / N2200 blend polymer as a bipolar organic polymer thin film material through a simple solution treatment method. These two materials are commercially available, have low cost, and are simple to prepare. Their good solubility and stability facilitate large-scale fabrication of electronic devices. Simultaneously, this P3HT / N2200 blend polymer exhibits photoresponsive characteristics, allowing control over information visibility by adjusting light exposure. Information can be read when light is applied and erased when light is removed. The device achieves self-destruction of information through physical adjustment. This light-assisted self-destructing electronic device avoids complex circuit design, significantly reduces manufacturing costs, and enhances information security. Based on the ability of this light-assisted self-destructing electronic device to control information visibility through light exposure, it provides a dynamic and secure method for data protection, bringing great potential for future development in data storage and secure communication.

[0060] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A light-assisted self-destructing electronic device, characterized in that, The optically assisted self-destructing electronic device comprises, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer, and a metal electrode layer; the organic polymer semiconductor layer comprises a blend of poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithienyl-5,5'-diyl), denoted as P3HT / N2200 blend polymer; the metal electrode layer comprises a source electrode and a drain electrode; In the organic polymer semiconductor layer, the mass concentration ratio of poly(3-hexylthiophene-2,5-diyl) to poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithiophene-5,5'-diyl) is 1:1 to 1:3; The concentration of the polymer mixture of P3HT and N2200 is 5-10 mg / ml.

2. A method for preparing the optically assisted self-destructing electronic device as described in claim 1, characterized in that, Including the following steps: A Si / SiO2 wafer is provided, and the Si / SiO2 wafer is cleaned, dried, and treated with ultraviolet ozone. Poly(3-hexylthiophene-2,5-diyl) and poly(2,7-bis(2-octyldodecyl)benzo(lmn)(3,8)o-diazaphenanthroline-1,3,6,8(2H,7H)-tetraone-4,9-diyl)((2,2')dithiophene-5,5'-diyl), i.e. P3HT and N2200, were mixed and dissolved in chlorobenzene to prepare a polymer mixed solution of P3HT and N2200; After spin-coating the polymer mixture solution of P3HT and N2200 on a Si / SiO2 wafer, the mixture is annealed to obtain a P3HT / N2200 blended polymer film, i.e., an organic polymer semiconductor layer. After depositing a metal electrode layer on the organic polymer semiconductor layer using a thermal evaporation method, the light-assisted self-destructible electronic device is obtained.

3. The method for preparing the optically assisted self-destructing electronic device according to claim 2, characterized in that, The steps of cleaning, drying and ultraviolet ozone treatment of the Si / SiO2 wafer include: ultrasonically treating the Si / SiO2 wafer with Decon90 solution for 20-30 minutes, rinsing it multiple times with deionized water using ultrasound, drying it at 90-95°C for 40-60 minutes, and then performing ultraviolet ozone treatment for 15-25 minutes.

4. The method for preparing the optically assisted self-destructing electronic device according to claim 2, characterized in that, In the polymer mixture solution of P3HT and N2200, the mass concentration ratio of P3HT to N2200 is 1:

2.

5. The method for preparing the optically assisted self-destructing electronic device according to claim 2, characterized in that, The spin coating rate is 1000-2000 rpm, and the spin coating time is 20-40 s.

6. The method for preparing the optically assisted self-destructing electronic device according to claim 2, characterized in that, The annealing temperature is 100-150℃, and the annealing time is 20-50 minutes.

7. The method for preparing the optically assisted self-destructing electronic device according to claim 2, characterized in that, The metal electrode layer includes a gold electrode layer, and the thickness of the gold electrode layer is 30-60 nm.

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