Three-junction full-perovskite laminated solar cell module

Abstract

The invention discloses a three-junction full-perovskite laminated solar cell module. The three-junction full-perovskite laminated solar cell module comprises a substrate layer and three cell units which are connected in series, according to the invention, a quadruple patterned structure of the three-junction full-perovskite laminated solar cell is constructed by etching the second hole transport layer and the functional layers below the second hole transport layer through scribing the fourth interval groove PX, so that the phenomena of short circuit and shunting of the cell are solved; and then a passivation solution, a wide bandgap semiconductor or an insulating layer reacts with the perovskite at the damaged part to form a two-dimensional structure, namely a repair type Type I heterojunction passivation layer structure, so that non-radiative recombination of carriers is reduced, and the photoelectric conversion performance of the cell is further improved.

Description

Technical Field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a triple-junction all-perovskite laminated solar cell assembly. Background Art

[0002] Perovskite solar cells have many advantages such as low cost, easy preparation, and high photoelectric conversion efficiency, and have great development potential. However, the utilization rate of sunlight by single-junction perovskite solar cells is limited, and tandem solar cells are an effective way to further improve the conversion efficiency. Theoretically, the photoelectric conversion efficiency of triple-junction all-perovskite tandem solar cells is higher than that of all-perovskite two-junction tandem solar cells. For further commercialization, perovskite solar cells need to expand their area, and the preparation process involves laser scribing, such as Figure 1 As shown in the figure, the current traditional perovskite solar cell module involves three main laser scribing steps: P1, P2, and P3. Since the single-junction perovskite cell module has no interconnection layer, the lateral conductivity of the Au interconnection layer of the two-junction stacked perovskite cell is poor, and neither of them has the problem of forming a conductive loop with the electrode; while the three-junction full perovskite stacked solar cell contains not only the Au interconnection layer, but also the transparent conductive oxide interconnection layer. The transparent conductive oxide has better lateral conductivity and has the problem of forming a conductive loop with the electrode, resulting in serious shunting effect and short circuit of the battery. In addition, the traditional laser process structure will cause certain damage to the battery, and it is impossible to achieve the improvement of the performance of the three-junction full perovskite stacked solar cell. Summary of the invention

[0003] The object of the present invention is to provide a triple-junction all-perovskite laminated solar cell module, which is prepared by the following steps:

[0004] Step 1, providing a base layer, depositing a transparent conductive layer on the base layer, and scratching the transparent conductive layer to form the first spacing groove P1 penetrating the transparent conductive layer;

[0005] Step 2, preparing a first hole transport layer on the transparent conductive layer;

[0006] Step 3, preparing a first titanium ore light absorption layer on the first hole transport layer;

[0007] Step 4, preparing a first electron transport layer on the first perovskite light absorbing layer, and preparing a first hole blocking layer on the first electron transport layer;

[0008] Step 5, preparing a first interconnect layer on the hole blocking layer;

[0009] Step 6, preparing a second hole transport layer on the first interconnect layer;

[0010] Step 7, scribing the second hole transport layer to form the fourth spacing groove P penetrating the base layer. X ;

[0011] Step 8, filling the fourth spacing groove with a passivation solution or depositing a wide bandgap semiconductor or an insulating layer to form a repaired Type I heterojunction passivation layer at the damaged portion of the first perovskite light absorbing layer;

[0012] Step 9, preparing a second perovskite light absorbing layer on the second hole transport layer;

[0013] Step 10, preparing a second electron transport layer on the second perovskite light absorbing layer, and preparing a second hole blocking layer on the second electron transport layer;

[0014] Step 11, preparing a second interconnect layer on the second hole blocking layer;

[0015] Step 12, preparing a third hole transport layer on the second interconnect layer;

[0016] Step 13, preparing a third perovskite light absorbing layer on the third hole transport layer;

[0017] Step 14, preparing a third electron transport layer on the third perovskite light absorbing layer, and preparing a third hole blocking layer on the third electron transport layer;

[0018] Step 15, scribing the third hole blocking layer to form the second spacing groove P2 penetrating the base layer;

[0019] Step 16, preparing a conformal anti-diffusion layer on the third hole blocking layer;

[0020] Step 17, preparing an electrode layer on the conformal diffusion prevention layer;

[0021] Step 18: scribing the electrode layer to form the third spacing groove P3 penetrating to the base layer.

[0022] Further, the fourth spacing groove is located between the first spacing groove and the second spacing groove, and the fourth spacing groove does not overlap, partially overlaps, or completely overlaps with the first spacing groove.

[0023] Further, the bandgap width of the first perovskite light absorbing layer is greater than that of the second perovskite light absorbing layer, and the bandgap width of the second perovskite light absorbing layer is greater than that of the third perovskite light absorbing layer. In one embodiment of the present invention, the first perovskite light absorbing layer is made of an ultra-wide bandgap perovskite, the second perovskite light absorbing layer is made of a conventional bandgap perovskite, and the third perovskite light absorbing layer is made of a narrow bandgap perovskite.

[0024] Furthermore, the first interconnect layer is made of transparent conductive oxide.

[0025] Furthermore, the second interconnect layer is made of metal.

[0026] For the base layer, transparent conductive layer, first hole transport layer, first electron transport layer, first hole blocking layer, second hole transport layer, second electron transport layer, second hole blocking layer, third hole transport layer, third electron transport layer, third hole blocking layer, conformal anti-diffusion layer and electrode layer, general materials known to those skilled in the art can be used without special requirements.

[0027] In the present invention, the fourth spacing groove P is firstly cut X The second hole transport layer and the functional layers below it are etched (the transparent conductive electrode ITO needs to be etched away) to interrupt the first interconnect layer to prevent it from forming a loop with the metal electrode, causing shunting and short circuit, and to provide groove space for constructing a repaired Type I heterojunction passivation layer. Afterwards, a repaired Type I heterojunction passivation layer is constructed in situ, and the damaged perovskite is repaired by infiltrating the passivation solution, wide bandgap semiconductor or insulating layer into the laser-etched damaged perovskite, while forming a two-dimensional perovskite phase, reducing the non-radiative recombination of carriers at the laser-damaged site and improving the photoelectric conversion performance of the battery component. Specifically, in P X After the laser process, PEAI, 4-F-PEAI, 4-3F-PEAI, GuaI, EDAI, PDAI and other passivation solutions can be applied by spin coating, scraping, coating, spraying and other methods; or a layer of PbI2 or various wide bandgap semiconductors can be deposited in the groove to achieve passivation and carrier blocking effects; commonly used polar and non-polar solvents can also be mixed, such as DMF, DMSO, ACN, IPA, ethanol, etc., to decompose part of the perovskite in the dead zone (laser P1 to P2 area) to form PbI2, which achieves passivation and carrier blocking effects; ALD and other methods can also be used to deposit an Al2O3 insulating layer in the groove to achieve passivation and repair effects, thereby improving the photoelectric conversion performance of solar cell modules.

[0028] The four-step scribing process designed in the present invention constructs a quadruple patterned structure of a triple-junction all-perovskite tandem solar cell, which solves the problem of short circuit and shunting of the cell. At the same time, the passivation solution, wide bandgap semiconductor or insulating layer reacts with the perovskite at the damaged part to form a two-dimensional perovskite structure, i.e., a repaired Type I heterojunction passivation layer structure, which reduces the non-radiative recombination of carriers and further improves the photoelectric conversion performance of the cell. The quadruple patterned structure and the repaired Type I heterojunction passivation layer structure are suitable for all tandem solar cells containing interconnecting layers with good lateral conductivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a device structure diagram of Example 1.

[0030] Figure 2 This is a device structure diagram of Example 2.

[0031] Figure 3 This is a device structure diagram of Example 3.

[0032] Figure 4 This is the structural diagram (left) and energy band diagram (right) of the repaired Type I heterojunction passivation layer.

[0033] Figure 5 This is the JV curve diagram of the battery assembly of Example 1.

[0034] Figure 6 It is the JV curve diagram of the battery components of Example 2 and Example 3. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present invention will be described in detail below in conjunction with examples. It should be understood that the following examples are provided only for the purpose of illustration and are not intended to limit the scope of the present invention. Those skilled in the art may make various modifications and substitutions to the present invention without departing from the purpose and spirit of the present invention.

[0036] Unless otherwise specified, the experimental methods used in the following examples are conventional methods.

[0037] Unless otherwise specified, the materials and reagents used in the following examples can be obtained from commercial sources.

[0038] Example 1

[0039] The device structure of this embodiment is as follows Figure 1 As shown, the following steps are adopted to prepare:

[0040] (1) Pretreatment of transparent conductive oxide ITO glass: Laser scribing P1 divides the 60 mm*60 mm ITO glass into 8 mutually non-conductive sub-cell areas; first rinse with deionized water, then sonicate with deionized water, acetone, and isopropanol for 30 min each, blow dry with a nitrogen gun, and then treat with UV ozone for 15 min.

[0041] (2) Preparation of the first hole transport layer (HTL): A 10 nm thick NiO layer was scraped onto the treated substrate. X , annealed for 10 min; then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped on this basis and NiO X The first hole transport layer was formed, and the layer was cleaned with isopropanol and then annealed for 10 minutes.

[0042] (3) Preparation of 2.0 eV perovskite layer: The stirred 2.0 eV perovskite solution (FA 0.7 Cs 0.3 PbIBr2) was scraped on the first hole transport layer and annealed at 100°C for 30 minutes. The thickness of the 2.0eV perovskite layer was about 250nm.

[0043] (4) Preparation of the first electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 2.0eV perovskite layer, and then a 30nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0044] (5) Preparation of transparent conductive oxide (IZO) interconnect layer: A 20 nm transparent conductive oxide (IZO) interconnect layer was deposited by magnetron sputtering.

[0045] (6) Preparation of the second hole transport layer (HTL): a 10 nm NiO layer was scraped on the above transparent conductive oxide (IZO) interconnect layer. X , annealed for 10 min; then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped and coated with NiO X The second hole transport layer was formed, and the layer was cleaned with isopropanol and then annealed for 10 minutes.

[0046] (7) Preparation of 1.6 eV perovskite layer: The stirred 1.6 eV perovskite solution (FA 0.9 Cs 0.1 PbI 2.7 Br 0.3 ) was scraped onto the second hole transport layer and annealed at 100°C for 20 min. The thickness of the 1.6 eV perovskite layer was 600 nm.

[0047] (8) Preparation of the second electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.6eV perovskite layer, and then a 30nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0048] (9) Preparation of Au interconnect layer: 0.5 nm of Au was deposited on the second hole blocking layer by thermal evaporation.

[0049] (10) Preparation of the third hole transport layer (HTL): A 40-50 nm thick PEDOT:PSS hole transport layer was prepared by blade coating and annealed at 170 °C for 20 min.

[0050] (11) Preparation of 1.22 eV perovskite layer: The stirred 1.22 eV perovskite solution (FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3) was coated on the third hole transport layer by scraping, annealed at 100°C for 10 min, and the thickness of the 1.22 eV perovskite layer was 900 nm.

[0051] (12) Preparation of the third electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.22eV perovskite layer, and then a 10nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0052] (13) Laser Scribing P2: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0053] (14) Preparation of CDB (SnO2) layer: A 5 nm CDB (SnO2) anti-diffusion layer was deposited by atomic layer deposition.

[0054] (15) Preparation of Cu electrode: A 150 nm Cu electrode was deposited by thermal evaporation.

[0055] (16) Laser Scribing P3: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0056] Example 2

[0057] The device structure of this embodiment is as follows Figure 2 As shown, the following steps are adopted to prepare:

[0058] (1) Pretreatment of transparent conductive oxide ITO glass: Laser scribing P1 divides the 60 mm*60 mm ITO glass into 8 mutually non-conductive sub-cell areas; first rinse with deionized water, then sonicate with deionized water, acetone, and isopropanol for 30 min each, blow dry with a nitrogen gun, and then treat with UV ozone for 15 min.

[0059] (2) Preparation of the first hole transport layer (HTL): a 10 nm NiO layer was scraped onto the treated substrate. X , annealed for 10 min; then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped on this basis and NiO X The first hole transport layer was formed, and the layer was cleaned with isopropanol and then annealed for 10 minutes.

[0060] (3) Preparation of 2.0 eV perovskite layer: The stirred 2.0 eV perovskite solution (FA 0.7 Cs 0.3 PbIBr2) was scraped on the first hole transport layer and annealed at 100°C for 30 min. The thickness of the 2.0 eV perovskite layer was 250 nm.

[0061] (4) Preparation of the first electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 2.0eV perovskite layer, and then a 30nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0062] (5) Preparation of transparent conductive oxide (IZO) interconnect layer: A 20 nm transparent conductive oxide (IZO) interconnect layer was deposited by magnetron sputtering.

[0063] (6) Preparation of the second hole transport layer (HTL): a 10 nm NiO layer was scraped on the above transparent conductive oxide (IZO) interconnect layer. X , annealed for 10 min. Then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped and coated with NiO X The second hole transport layer was formed, and the layer was cleaned with isopropanol and then annealed for 10 minutes.

[0064] (7) Laser Scribing P X :Use laser to etch the transparent conductive electrode ITO and other functional layers. Interrupt the transparent conductive oxide (IZO) interconnection layer to prevent it from forming a loop with the metal electrode, causing shunting and short circuit, and provide groove space for the construction of the repaired Type I heterojunction passivation layer, providing a channel for the penetration of the passivation solution.

[0065] (8) Preparation of 1.6 eV perovskite layer: The stirred 1.6 eV perovskite solution (FA 0.9 Cs 0.1 PbI 2.7 Br 0.3 ) was scraped onto (7) and annealed at 100°C for 20 min. The thickness of the 1.6 eV perovskite layer was 600 nm.

[0066] (9) Preparation of the second electron transport layer and hole blocking layer (ETL): 20 nm of C 60 Deposited on the 1.6eV perovskite layer. Then a 30nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0067] (10) Preparation of Au interconnect layer: 0.5 nm of Au was deposited on the second hole blocking layer by thermal evaporation.

[0068] (11) Preparation of the third hole transport layer (HTL): A 40-50 nm thick PEDOT:PSS hole transport layer was prepared by blade coating and annealed at 170 °C for 20 min.

[0069] (12) Preparation of 1.22 eV perovskite layer: The stirred 1.22 eV perovskite solution (FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3) was coated on the third hole transport layer by scraping, annealed at 100°C for 10 min, and the thickness of the 1.22 eV perovskite layer was 900 nm.

[0070] (13) Preparation of the third electron transport layer and hole blocking layer (ETL): 20 nm of C 60 Deposited on the 1.22eV perovskite layer. Then a 10nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0071] (14) Laser Scribing P2: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0072] (15) Preparation of CDB (SnO2) layer: A 5 nm CDB (SnO2) anti-diffusion layer was deposited by atomic layer deposition.

[0073] (16) Preparation of Cu electrode: A 150 nm Cu electrode was deposited by thermal evaporation.

[0074] (17) Laser Scribing P3: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0075] Example 3

[0076] The device structure of this embodiment is as follows Figure 3 As shown, the following steps are adopted to prepare:

[0077] (1) Pretreatment of transparent conductive oxide ITO glass: Laser scribing P1 divides the 60 mm*60 mm ITO glass into 8 mutually non-conductive sub-cell areas; first rinse with deionized water, then sonicate with deionized water, acetone, and isopropanol for 30 min each, blow dry with a nitrogen gun, and then treat with UV ozone for 15 min.

[0078] (2) Preparation of the first hole transport layer (HTL): a 10 nm NiO layer was scraped onto the treated substrate.X , annealed for 10 min. Then, a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped on this basis and NiO X The first hole transport layer was formed, and the layer was cleaned with isopropanol and then annealed for 10 minutes.

[0079] (3) Preparation of 2.0 eV perovskite layer: The stirred 2.0 eV perovskite solution (FA 0.7 Cs 0.3 PbIBr2) was scraped on the first hole transport layer and annealed at 100°C for 30 min. The thickness of the 2.0 eV perovskite layer was 250 nm.

[0080] (4) Preparation of the first electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 2.0eV perovskite layer, and then a 30nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0081] (5) Preparation of transparent conductive oxide (IZO) interconnect layer: A 20 nm transparent conductive oxide (IZO) interconnect layer was deposited by magnetron sputtering.

[0082] (6) Preparation of the second hole transport layer (HTL): a 10 nm NiO layer was scraped onto the above transparent conductive oxide (IZO) interconnect layer. X , annealed for 10 min. Then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped and coated with NiO X The second hole transport layer was formed, and the layer was cleaned with isopropanol and then annealed for 10 minutes.

[0083] (7) Laser Scribing P X :Use laser to etch the transparent conductive electrode ITO and other functional layers. Interrupt the transparent conductive oxide (IZO) interconnection layer to prevent it from forming a loop with the metal electrode, causing shunting and short circuit, and provide groove space for the construction of the repaired Type I heterojunction passivation layer, providing a channel for the penetration of the passivation solution.

[0084] (8) In-situ structural repair type I heterojunction passivation layer: X After laser treatment, 1 mg / ml PEAI IPA solution was scraped onto the surface of the P XThe grooves formed react with the laser-damaged perovskite to form a two-dimensional perovskite, and a repaired Type I heterojunction passivation layer is formed at the interface of the 2.0 eV perovskite subcell. To remove the remaining PEAI on the cell surface, it is cleaned with isopropanol and then annealed for 5 minutes.

[0085] (9) Preparation of 1.6 eV perovskite layer: The stirred 1.6 eV perovskite solution (FA 0.9 Cs 0.1 PbI 2.7 Br 0.3 ) was scraped onto (7) and annealed at 100°C for 20 min. The thickness of the 1.6 eV perovskite layer was 600 nm.

[0086] (10) Preparation of the second electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.6eV perovskite layer, and then a 30nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0087] (11) Preparation of Au interconnect layer: 0.5 nm of Au was deposited on the second hole blocking layer by thermal evaporation.

[0088] (12) Preparation of the third hole transport layer (HTL): A 40-50 nm thick PEDOT:PSS hole transport layer was prepared by blade coating and annealed at 170 °C for 20 min.

[0089] (13) Preparation of 1.22 eV perovskite layer: The stirred 1.22 eV perovskite solution (FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3) was coated on the third hole transport layer by scraping, annealed at 100°C for 10 min, and the thickness of the 1.22 eV perovskite layer was 600 nm.

[0090] (14) Preparation of the third electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.22eV perovskite layer, and then a 10nm hole blocking layer SnO2 is deposited by atomic layer deposition.

[0091] (15) Laser Scribing P2: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0092] (16) Preparation of CDB (SnO2) layer: A 5 nm CDB (SnO2) anti-diffusion layer was deposited by atomic layer deposition.

[0093] (17) Preparation of Cu electrode: A 150 nm Cu electrode was deposited by thermal evaporation.

[0094] (18) Laser Scribing P3: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0095] Figure 5 This is a JV curve diagram of the triple-junction stacked solar cell module constructed using the traditional laser process in Example 1. The open-circuit voltages of the sub-cells are not superimposed at all, and there is an obvious short circuit.

[0096] Example 2 constructs a triple-junction all-perovskite tandem solar cell module with a quadruple patterning structure, introducing laser P X Cutting the transparent conductive oxide IZO solves the short-circuit problem under the traditional laser process structure and improves the battery performance, but it still does not solve the problems of laser damage and non-radiative recombination at the interface.

[0097] like Figure 3 and 4 As shown, Example 3 introduces a repaired Type I heterojunction passivation layer structure based on Example 2 to form a two-dimensional perovskite at the 2.0 eV perovskite laser damage. The two-dimensional perovskite effectively avoids the lateral transmission of electrons and holes and the non-radiative recombination generated at the interface. Figure 6 As shown in , Example 3 exhibits higher open circuit voltage, fill factor, and higher photoelectric conversion efficiency than Example 2.

Claims

1. A triple-junction all-perovskite tandem solar cell module, characterized in that: Prepared using the following steps: Step 1, providing a base layer, depositing a transparent conductive layer on the base layer, and scratching the transparent conductive layer to form the first spacing groove penetrating the transparent conductive layer; Step 2, preparing a first hole transport layer on the transparent conductive layer; Step 3, preparing a first perovskite light absorbing layer on the first hole transport layer; Step 4, preparing a first electron transport layer on the first perovskite light absorbing layer, and preparing a first hole blocking layer on the first electron transport layer; Step 5, preparing a first interconnect layer on the hole blocking layer; Step 6, preparing a second hole transport layer on the first interconnect layer; Step 7, scribing the second hole transport layer to form the fourth spacing groove penetrating to the base layer; Step 8, filling the fourth spacing groove with a passivation solution or depositing a wide bandgap semiconductor / insulating layer to form a repaired Type I heterojunction passivation layer at the damaged portion of the first perovskite light absorbing layer; Step 9, preparing a second perovskite light absorbing layer on the second hole transport layer; Step 10, preparing a second electron transport layer on the second perovskite light absorbing layer, and preparing a second hole blocking layer on the second electron transport layer; Step 11, preparing a second interconnect layer on the second hole blocking layer; Step 12, preparing a third hole transport layer on the second interconnect layer; Step 13, preparing a third perovskite light absorbing layer on the third hole transport layer; Step 14, preparing a third electron transport layer on the third perovskite light absorbing layer, and preparing a third hole blocking layer on the third electron transport layer; Step 15, scribing the third hole blocking layer to form the second spacing groove penetrating to the base layer; Step 16, preparing a conformal anti-diffusion layer on the third hole blocking layer; Step 17, preparing an electrode layer on the conformal diffusion prevention layer; Step 18: Scribe the electrode layer to form the third spacing groove penetrating to the base layer.

2. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The fourth spacing groove is located between the first spacing groove and the second spacing groove, and the fourth spacing groove does not overlap, partially overlaps, or completely overlaps with the first spacing groove.

3. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The band gap width of the first perovskite light absorbing layer is greater than that of the second perovskite light absorbing layer, and the band gap width of the second perovskite light absorbing layer is greater than that of the third perovskite light absorbing layer.

4. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The first interconnect layer is made of transparent conductive oxide.

5. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The second interconnect layer is made of metal.

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