A triple-junction all-perovskite tandem solar cell module

Abstract

The present invention discloses a triple-junction all-perovskite laminated solar cell assembly, comprising a substrate layer and three battery cells connected in series. X The second hole transport layer and the functional layers below are etched to construct a quadruple patterned structure of a triple-junction all-perovskite stacked solar cell, which solves the problems of battery short circuit and shunting. Then, a passivation solution, a wide bandgap semiconductor or an insulating layer reacts with the perovskite at the damaged part to form a two-dimensional structure, namely a repaired Type I heterojunction passivation layer structure, which reduces the non-radiative recombination of carriers and further improves the battery's photoelectric conversion performance.

Description

Technical Field

[0001] The present invention belongs to the technical field of solar cells, and in particular relates to a triple-junction all-perovskite stacked solar cell assembly. Background Art

[0002] Perovskite solar cells have many advantages such as low cost, easy preparation, and high photoelectric conversion efficiency, and have great development potential. However, the utilization rate of sunlight by single-junction perovskite solar cells is limited, and tandem solar cells are an effective way to further improve the conversion efficiency. Theoretically, the photoelectric conversion efficiency of triple-junction all-perovskite tandem solar cells is higher than that of all-perovskite two-junction tandem solar cells. For further commercialization, perovskite solar cells need to expand their area, and the preparation process involves laser scribing, such as Figure 1 As shown in the figure, conventional perovskite solar cell modules currently involve three main laser scribing steps: P1, P2, and P3. Since single-junction perovskite solar cell modules lack an interconnect layer, the Au interconnect layer in two-junction tandem perovskite cells has poor lateral conductivity, and neither can form a conductive loop with the electrodes. Triple-junction all-perovskite tandem solar cells, on the other hand, contain not only an Au interconnect layer but also a transparent conductive oxide interconnect layer. Transparent conductive oxides have better lateral conductivity, but they can form a conductive loop with the electrodes, leading to severe shunting and short-circuiting in the cells. Furthermore, conventional laser process construction can damage the cells, making it impossible to achieve improved performance in triple-junction all-perovskite tandem solar cells. Summary of the Invention

[0003] The purpose of the present invention is to provide a triple-junction all-perovskite tandem solar cell module, which is prepared by the following steps:

[0004] Step 1: providing a base layer, depositing a transparent conductive layer on the base layer, and scribing the transparent conductive layer to form the first spacing groove P1 penetrating the transparent conductive layer;

[0005] Step 2, preparing a first hole transport layer on the transparent conductive layer;

[0006] Step 3, preparing a first titanium ore light absorption layer on the first hole transport layer;

[0007] Step 4, preparing a first electron transport layer on the first perovskite light absorbing layer, and preparing a first hole blocking layer on the first electron transport layer;

[0008] Step 5, preparing a first interconnection layer on the hole blocking layer;

[0009] Step 6, preparing a second hole transport layer on the first interconnection layer;

[0010] Step 7: Scribe the second hole transport layer to form the fourth spacing groove P that penetrates the base layer. X ;

[0011] Step 8: Filling the fourth spacing groove with a passivation solution or depositing a wide bandgap semiconductor or insulating layer to form a repaired Type I heterojunction passivation layer at the damaged portion of the first perovskite light absorbing layer;

[0012] Step 9, preparing a second perovskite light absorbing layer on the second hole transport layer;

[0013] Step 10, preparing a second electron transport layer on the second perovskite light absorbing layer, and preparing a second hole blocking layer on the second electron transport layer;

[0014] Step 11, forming a second interconnect layer on the second hole blocking layer;

[0015] Step 12, preparing a third hole transport layer on the second interconnect layer;

[0016] Step 13, preparing a third perovskite light absorbing layer on the third hole transport layer;

[0017] Step 14, preparing a third electron transport layer on the third perovskite light absorbing layer, and preparing a third hole blocking layer on the third electron transport layer;

[0018] Step 15, scribing the third hole blocking layer to form the second spacing groove P2 penetrating to the base layer;

[0019] Step 16, preparing a conformal anti-diffusion layer on the third hole blocking layer;

[0020] Step 17, preparing an electrode layer on the conformal anti-diffusion layer;

[0021] Step 18: scribing the electrode layer to form the third spacing groove P3 penetrating to the base layer.

[0022] Furthermore, the fourth spacing groove is located between the first spacing groove and the second spacing groove, and the fourth spacing groove does not overlap, partially overlaps, or completely overlaps with the first spacing groove.

[0023] Furthermore, the first perovskite light absorbing layer has a greater bandgap than the second perovskite light absorbing layer, and the second perovskite light absorbing layer has a greater bandgap than the third perovskite light absorbing layer. In one embodiment of the present invention, the first perovskite light absorbing layer is made of an ultra-wide bandgap perovskite, the second perovskite light absorbing layer is made of a conventional bandgap perovskite, and the third perovskite light absorbing layer is made of a narrow bandgap perovskite.

[0024] Furthermore, the first interconnection layer is made of transparent conductive oxide.

[0025] Furthermore, the second interconnection layer is made of metal.

[0026] For the base layer, transparent conductive layer, first hole transport layer, first electron transport layer, first hole blocking layer, second hole transport layer, second electron transport layer, second hole blocking layer, third hole transport layer, third electron transport layer, third hole blocking layer, conformal anti-diffusion layer and electrode layer, general materials known to those skilled in the art can be used without special requirements.

[0027] In the present invention, first, the fourth spacing groove P is carved X The second hole transport layer and the functional layers below it are etched (the transparent conductive electrode ITO needs to be etched away) in order to interrupt the first interconnection layer to prevent it from forming a loop with the metal electrode, causing shunting and short circuit, and to provide a groove space for constructing a repair type Type I heterojunction passivation layer. Afterwards, a repair type Type I heterojunction passivation layer is constructed in situ, and the passivation solution, wide bandgap semiconductor or insulating layer is infiltrated into the laser-etched damaged perovskite to repair the damaged perovskite. At the same time, a two-dimensional perovskite phase is formed to reduce the non-radiative recombination of carriers at the laser-damaged site, thereby improving the photoelectric conversion performance of the battery component. Specifically, in P X After the laser process, PEAI, 4-F-PEAI, 4-3F-PEAI, GuaI, EDAI, PDAI and other passivation solutions can be applied by spin coating, scraping, coating, spraying, etc.; or a layer of PbI2 or various wide bandgap semiconductors can be deposited in the groove to achieve passivation and carrier blocking effects; commonly used polar and non-polar solvents such as DMF, DMSO, ACN, IPA, ethanol, etc. can be mixed to decompose part of the perovskite in the dead zone (laser P1 to P2 area) to form PbI2, achieving passivation and carrier blocking effects; ALD and other methods can also be used to deposit an Al2O3 insulating layer in the groove to achieve passivation and repair effects, thereby improving the photoelectric conversion performance of solar cell modules.

[0028] The four-step scribing process designed in this invention creates a quadruple patterned structure for triple-junction all-perovskite tandem solar cells, resolving short-circuiting and shunting issues. Furthermore, a passivation solution, wide-bandgap semiconductor, or insulating layer reacts with the damaged perovskite to form a two-dimensional perovskite structure, a repaired Type I heterojunction passivation layer structure. This reduces non-radiative recombination of charge carriers and further enhances the cell's photoelectric conversion performance. This quadruple patterned structure and repaired Type I heterojunction passivation layer structure are applicable to all tandem solar cells containing interconnecting layers with good lateral conductivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a device structure diagram of Example 1.

[0030] Figure 2 This is a device structure diagram of Example 2.

[0031] Figure 3 This is a device structure diagram of Example 3.

[0032] Figure 4 The structural diagram (left) and energy band diagram (right) of the repaired Type I heterojunction passivation layer.

[0033] Figure 5 This is the JV curve diagram of the battery assembly of Example 1.

[0034] Figure 6 JV curves of the battery assemblies of Examples 2 and 3. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present invention will be described in detail below with reference to the examples. It should be understood that the following examples are provided for illustrative purposes only and are not intended to limit the scope of the present invention. Those skilled in the art may make various modifications and substitutions to the present invention without departing from the purpose and spirit of the present invention.

[0036] Unless otherwise specified, the experimental methods used in the following examples are conventional methods.

[0037] Unless otherwise specified, the materials and reagents used in the following examples can be obtained from commercial sources.

[0038] Example 1

[0039] The device structure of this embodiment is as follows Figure 1 As shown, it is prepared by the following steps:

[0040] (1) Pretreatment of transparent conductive oxide ITO glass: Laser scribing P1 divides the 60mm*60mm ITO glass into 8 mutually non-conductive sub-cell areas; first rinse with deionized water, then sonicate with deionized water, acetone, and isopropyl alcohol for 30 minutes each, blow dry with a nitrogen gun, and then treat with UV ozone for 15 minutes.

[0041] (2) Preparation of the first hole transport layer (HTL): a 10 nm thick NiO layer was scraped onto the treated substrate. X , annealed for 10 min; then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped on this basis and NiO X The first hole transport layer was formed, and the layer was cleaned with isopropyl alcohol and then annealed for 10 minutes.

[0042] (3) Preparation of 2.0 eV perovskite layer: The stirred 2.0 eV perovskite solution (FA 0.7 Cs 0.3 PbIBr2) was scraped onto the first hole transport layer and annealed at 100°C for 30 minutes. The thickness of the 2.0eV perovskite layer was about 250nm.

[0043] (4) Preparation of the first electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 2.0eV perovskite layer, and then a 30nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0044] (5) Preparation of transparent conductive oxide (IZO) interconnect layer: A 20 nm transparent conductive oxide (IZO) interconnect layer was deposited by magnetron sputtering.

[0045] (6) Preparation of the second hole transport layer (HTL): a 10 nm NiO layer was scraped onto the above-mentioned transparent conductive oxide (IZO) interconnect layer. X , annealed for 10 min; then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped and coated with NiO X The second hole transport layer was formed, and the film was cleaned with isopropyl alcohol and then annealed for 10 minutes.

[0046] (7) Preparation of 1.6eV perovskite layer: The stirred 1.6eV perovskite solution (FA 0.9 Cs 0.1 PbI 2.7 Br 0.3 ) was scraped onto the second hole transport layer and annealed at 100°C for 20 min. The thickness of the 1.6eV perovskite layer was 600nm.

[0047] (8) Preparation of the second electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.6eV perovskite layer, and then a 30nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0048] (9) Preparation of Au interconnect layer: 0.5 nm of Au was deposited on the second hole blocking layer by thermal evaporation.

[0049] (10) Preparation of the third hole transport layer (HTL): A 40-50 nm thick PEDOT:PSS hole transport layer was prepared by blade coating and annealed at 170 °C for 20 min.

[0050] (11) Preparation of 1.22eV perovskite layer: The stirred 1.22eV perovskite solution (FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3) was coated on the third hole transport layer and annealed at 100°C for 10 min. The thickness of the 1.22 eV perovskite layer was 900 nm.

[0051] (12) Preparation of the third electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.22eV perovskite layer, and then a 10nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0052] (13) Laser Scribing P2: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0053] (14) Preparation of CDB (SnO2) layer: A 5 nm CDB (SnO2) anti-diffusion layer was deposited by atomic layer deposition.

[0054] (15) Cu electrode preparation: 150 nm Cu electrode was deposited by thermal evaporation.

[0055] (16) Laser Scribing P3: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0056] Example 2

[0057] The device structure of this embodiment is as follows Figure 2 As shown, it is prepared by the following steps:

[0058] (1) Pretreatment of transparent conductive oxide ITO glass: Laser scribing P1 divides the 60mm*60mm ITO glass into 8 mutually non-conductive sub-cell areas; first rinse with deionized water, then sonicate with deionized water, acetone, and isopropyl alcohol for 30 minutes each, blow dry with a nitrogen gun, and then treat with UV ozone for 15 minutes.

[0059] (2) Preparation of the first hole transport layer (HTL): a 10 nm NiO layer was scraped onto the treated substrate. X , annealed for 10 min; then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped on this basis and NiO X The first hole transport layer was formed, and the layer was cleaned with isopropyl alcohol and then annealed for 10 minutes.

[0060] (3) Preparation of 2.0 eV perovskite layer: The stirred 2.0 eV perovskite solution (FA 0.7 Cs 0.3 PbIBr2) was scraped onto the first hole transport layer and annealed at 100°C for 30 min. The thickness of the 2.0 eV perovskite layer was 250 nm.

[0061] (4) Preparation of the first electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 2.0eV perovskite layer, and then a 30nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0062] (5) Preparation of transparent conductive oxide (IZO) interconnect layer: A 20 nm transparent conductive oxide (IZO) interconnect layer was deposited by magnetron sputtering.

[0063] (6) Preparation of the second hole transport layer (HTL): a 10 nm NiO layer was scraped onto the above-mentioned transparent conductive oxide (IZO) interconnect layer. X , annealed for 10 min. Then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped and coated with NiO X The second hole transport layer was formed, and the film was cleaned with isopropyl alcohol and then annealed for 10 minutes.

[0064] (7) Laser Scribing P X Laser etching is used to completely etch the transparent conductive electrode ITO and other functional layers. This interrupts the transparent conductive oxide (IZO) interconnect layer, preventing it from forming a loop with the metal electrode, which would cause shunting and shorting. This creates a groove for the construction of a repaired Type I heterojunction passivation layer, providing a channel for the infiltration of the passivation solution.

[0065] (8) Preparation of 1.6eV perovskite layer: The stirred 1.6eV perovskite solution (FA 0.9 Cs 0.1 PbI 2.7 Br 0.3 ) was scraped onto (7) and annealed at 100°C for 20 min. The thickness of the 1.6eV perovskite layer was 600nm.

[0066] (9) Preparation of the second electron transport layer and hole blocking layer (ETL): 20 nm of C 60 Deposited on the 1.6eV perovskite layer. Then, a 30nm hole-blocking layer of SnO2 was deposited using atomic layer deposition.

[0067] (10) Preparation of Au interconnect layer: 0.5 nm of Au was deposited on the second hole blocking layer by thermal evaporation.

[0068] (11) Preparation of the third hole transport layer (HTL): A 40-50 nm thick PEDOT:PSS hole transport layer was prepared by blade coating and annealed at 170 °C for 20 min.

[0069] (12) Preparation of 1.22eV perovskite layer: The stirred 1.22eV perovskite solution (FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3) was coated on the third hole transport layer and annealed at 100°C for 10 min. The thickness of the 1.22 eV perovskite layer was 900 nm.

[0070] (13) Preparation of the third electron transport layer and hole blocking layer (ETL): 20 nm of C 60 Deposited on the 1.22eV perovskite layer. Then, a 10nm hole-blocking layer of SnO2 was deposited using atomic layer deposition.

[0071] (14) Laser Scribing P2: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0072] (15) Preparation of CDB (SnO2) layer: A 5 nm CDB (SnO2) anti-diffusion layer was deposited by atomic layer deposition.

[0073] (16) Cu electrode preparation: A 150 nm Cu electrode was deposited by thermal evaporation.

[0074] (17) Laser Scribing P3: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0075] Example 3

[0076] The device structure of this embodiment is as follows Figure 3 As shown, it is prepared by the following steps:

[0077] (1) Pretreatment of transparent conductive oxide ITO glass: Laser scribing P1 divides the 60mm*60mm ITO glass into 8 mutually non-conductive sub-cell areas; first rinse with deionized water, then sonicate with deionized water, acetone, and isopropyl alcohol for 30 minutes each, blow dry with a nitrogen gun, and then treat with UV ozone for 15 minutes.

[0078] (2) Preparation of the first hole transport layer (HTL): a 10 nm NiO layer was scraped onto the treated substrate.X , annealed for 10 min. Then, a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped on this basis. X The first hole transport layer was formed, and the layer was cleaned with isopropyl alcohol and then annealed for 10 minutes.

[0079] (3) Preparation of 2.0 eV perovskite layer: The stirred 2.0 eV perovskite solution (FA 0.7 Cs 0.3 PbIBr2) was scraped onto the first hole transport layer and annealed at 100°C for 30 min. The thickness of the 2.0 eV perovskite layer was 250 nm.

[0080] (4) Preparation of the first electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 2.0eV perovskite layer, and then a 30nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0081] (5) Preparation of transparent conductive oxide (IZO) interconnect layer: A 20 nm transparent conductive oxide (IZO) interconnect layer was deposited by magnetron sputtering.

[0082] (6) Preparation of the second hole transport layer (HTL): a 10 nm NiO layer was scraped onto the above transparent conductive oxide (IZO) interconnection layer. X , annealed for 10 min. Then a monolayer (0.25 mmol / ml 2PACz and 0.75 mmol / ml Me-4PACz mixed IPA solution) was scraped and coated with NiO X The second hole transport layer was formed, and the film was cleaned with isopropyl alcohol and then annealed for 10 minutes.

[0083] (7) Laser Scribing P X Laser etching is used to completely etch the transparent conductive electrode ITO and other functional layers. This interrupts the transparent conductive oxide (IZO) interconnect layer, preventing it from forming a loop with the metal electrode, which would cause shunting and shorting. This creates a groove for the construction of a repaired Type I heterojunction passivation layer, providing a channel for the infiltration of the passivation solution.

[0084] (8) In-situ structure repair type I heterojunction passivation layer: X After laser treatment, 1 mg / ml PEAI IPA solution was scraped onto the surface of the P XThe grooves formed react with the laser-damaged perovskite to form a two-dimensional perovskite, forming a repaired Type I heterojunction passivation layer at the interface of the 2.0 eV perovskite subcell. To remove the remaining PEAI on the cell surface, it was cleaned with isopropyl alcohol and then annealed for 5 minutes.

[0085] (9) Preparation of 1.6eV perovskite layer: The stirred 1.6eV perovskite solution (FA 0.9 Cs 0.1 PbI 2.7 Br 0.3 ) was scraped onto (7) and annealed at 100°C for 20 min. The thickness of the 1.6eV perovskite layer was 600nm.

[0086] (10) Preparation of the second electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.6eV perovskite layer, and then a 30nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0087] (11) Preparation of Au interconnect layer: 0.5 nm of Au was deposited on the second hole blocking layer by thermal evaporation.

[0088] (12) Preparation of the third hole transport layer (HTL): A 40-50 nm thick PEDOT:PSS hole transport layer was prepared by blade coating and annealed at 170 °C for 20 min.

[0089] (13) Preparation of 1.22eV perovskite layer: The stirred 1.22eV perovskite solution (FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3) was coated on the third hole transport layer and annealed at 100°C for 10 min. The thickness of the 1.22 eV perovskite layer was 600 nm.

[0090] (14) Preparation of the third electron transport layer and hole blocking layer (ETL): 20 nm of C 60 It is deposited on the 1.22eV perovskite layer, and then a 10nm hole blocking layer of SnO2 is deposited by atomic layer deposition.

[0091] (15) Laser Scribing P2: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0092] (16) Preparation of CDB (SnO2) layer: A 5 nm CDB (SnO2) anti-diffusion layer was deposited by atomic layer deposition.

[0093] (17) Cu electrode preparation: 150 nm Cu electrode was deposited by thermal evaporation.

[0094] (18) Laser Scribing P3: Use laser to etch all functional layers above the transparent conductive electrode ITO without damaging the transparent conductive electrode ITO.

[0095] Figure 5 This is a JV curve diagram of the triple-junction stacked solar cell module constructed using the traditional laser process in Example 1. The open-circuit voltages of the sub-cells are not superimposed at all, indicating an obvious short circuit.

[0096] Example 2 constructed a triple-junction all-perovskite tandem solar cell module with a quadruple patterned structure, and introduced laser P X Cutting the transparent conductive oxide IZO solves the short-circuit problem under traditional laser process construction and improves battery performance, but it still does not solve the problems of damage caused by laser and non-radiative recombination at the interface.

[0097] like Figure 3 and 4 As shown, Example 3 introduces a repaired Type I heterojunction passivation layer structure based on Example 2 to form a two-dimensional perovskite at the 2.0eV perovskite laser damage. The two-dimensional perovskite effectively avoids the lateral transmission of electrons and holes and the non-radiative recombination generated at the interface. Figure 6 As shown in , Example 3 exhibits higher open circuit voltage, fill factor, and higher photoelectric conversion efficiency than Example 2.

Claims

1. A triple-junction all-perovskite tandem solar cell module, characterized in that: Prepared using the following steps: Step 1: providing a base layer, depositing a transparent conductive layer on the base layer, and scribing the transparent conductive layer to form a first spacing groove penetrating the transparent conductive layer; Step 2, preparing a first hole transport layer on the transparent conductive layer; Step 3, preparing a first perovskite light absorbing layer on the first hole transport layer; Step 4, preparing a first electron transport layer on the first perovskite light absorbing layer, and preparing a first hole blocking layer on the first electron transport layer; Step 5, preparing a first interconnect layer on the hole blocking layer; Step 6, preparing a second hole transport layer on the first interconnection layer; Step 7, scribing the second hole transport layer to form a fourth spacing groove penetrating the base layer; Step 8: Filling the fourth spacing groove with a passivation solution or depositing a wide bandgap semiconductor / insulating layer to form a repaired Type I heterojunction passivation layer at the damaged portion of the first perovskite light absorbing layer; Step 9, preparing a second perovskite light absorbing layer on the second hole transport layer; Step 10, forming a second electron transport layer on the second perovskite light absorbing layer, and forming a second hole blocking layer on the second electron transport layer; Step 11, forming a second interconnect layer on the second hole blocking layer; Step 12, preparing a third hole transport layer on the second interconnect layer; Step 13, preparing a third perovskite light absorbing layer on the third hole transport layer; Step 14, preparing a third electron transport layer on the third perovskite light absorbing layer, and preparing a third hole blocking layer on the third electron transport layer; Step 15, scribing the third hole blocking layer to form a second spacing groove penetrating to the base layer; Step 16, preparing a conformal anti-diffusion layer on the third hole blocking layer; Step 17, preparing an electrode layer on the conformal anti-diffusion layer; Step 18: Scribing the electrode layer to form a third spacing groove penetrating to the base layer.

2. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The fourth spacing groove is located between the first spacing groove and the second spacing groove, and the fourth spacing groove does not overlap, partially overlaps, or completely overlaps with the first spacing groove.

3. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The band gap width of the first perovskite light absorbing layer is greater than that of the second perovskite light absorbing layer, and the band gap width of the second perovskite light absorbing layer is greater than that of the third perovskite light absorbing layer.

4. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The first interconnection layer is made of transparent conductive oxide.

5. The triple-junction all-perovskite tandem solar cell module according to claim 1, characterized in that: The second interconnection layer is made of metal.

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