Flow guide structures and heat shield structures for deposition uniformity and process adjustability and related methods

Abstract

The disclosure relates to diversion structures and heat shielding structures for deposition uniformity and process adjustability and related methods. In one embodiment, an apparatus for substrate processing includes a chamber body including a processing volume. The apparatus includes one or more heat sources. The apparatus includes a diversion structure positioned in the processing volume. The diversion structure includes one or more first diverters dividing the processing volume into a plurality of flow levels and one or more second diverters oriented to intersect the one or more first diverters and to divide each of the plurality of flow levels into a plurality of flow segments. The diversion structure includes one or more third diverters oriented to intersect the one or more second diverters and divide the plurality of flow segments into a plurality of flow zones.

Description

Technical Field

[0001] The present disclosure relates to flow guiding structures and heat shielding structures and related methods for deposition uniformity and process tunability.

[0002] Description of Related Technology

[0003] Semiconductor substrates are processed for a wide variety of applications, including the manufacture of integrated devices and micro-devices. However, operations (e.g., epitaxial deposition operations) may be time-consuming, costly, inefficient, and may have limited capacity and yield. The film growth rate during operation is limited. In addition, the hardware may involve relatively large sizes that occupy a large footprint in a manufacturing facility. In addition, the operation may involve obstacles in temperature control, gas control, and / or substrate center-to-edge control and adjustability. Such obstacles may be exacerbated in relatively complex processing operations. For example, in batch epitaxial processing, deposition non-uniformity and process adjustability may be hindered.

[0004] Therefore, a need exists for improved apparatus and methods in semiconductor processing. Summary of the invention

[0005] The present disclosure relates to flow guiding structures and heat shielding structures and related methods for deposition uniformity and process tunability.

[0006] In one embodiment, an apparatus for substrate processing includes: a chamber body, the chamber body including a processing volume, a plurality of gas injection passages, the plurality of gas injection passages formed in the chamber body, and one or more gas exhaust passages, the one or more gas exhaust passages formed in the chamber body. The apparatus includes one or more heat sources, the one or more heat sources are configured to generate heat, and a substrate support assembly, the substrate support assembly is positioned in the processing volume. The apparatus includes a flow guiding structure, the flow guiding structure is positioned in the processing volume. The flow guiding structure includes one or more first flow diverters and one or more second flow diverters, the one or more first flow diverters dividing the processing volume into a plurality of flow levels, the one or more second flow diverters oriented to intersect the one or more first flow diverters and divide each of the plurality of flow levels into a plurality of flow segments. The flow guiding structure includes one or more third flow diverters, the one or more third flow diverters oriented to intersect the one or more second flow diverters and divide the plurality of flow segments into a plurality of flow regions.

[0007] In one embodiment, an apparatus for substrate processing includes: a chamber body, the chamber body including one or more sidewalls, a processing volume, a plurality of gas injection passages, the plurality of gas injection passages formed in the chamber body, and one or more gas exhaust passages, the one or more gas exhaust passages formed in the chamber body. The apparatus includes a substrate support assembly, the substrate support assembly is positioned in the processing volume, and one or more liners, the liners configured to line the one or more sidewalls of the chamber body. The one or more liners include a plurality of liner gaps. The apparatus includes a flow guide structure, the flow guide structure is positioned in the processing volume, the flow guide structure includes one or more first flow dividers, the one or more first flow dividers divide the processing volume into a plurality of flow levels. The one or more first flow dividers are coupled to the one or more liners. The flow guide structure includes one or more second flow dividers, the one or more second flow dividers are oriented to intersect with the one or more first flow dividers and divide each of the plurality of flow levels into a plurality of flow segments. The flow guiding structure includes a plurality of third flow dividers, the plurality of third flow dividers are oriented to intersect with one or more second flow dividers and divide the plurality of flow segments into a plurality of flow areas, and a plurality of flow gaps between the plurality of third flow dividers. The plurality of flow gaps are aligned with the plurality of gasket gaps. The device includes a plurality of windows, and the plurality of windows are positioned in the plurality of gasket gaps.

[0008] In one embodiment, a flow guiding structure for positioning within a substrate processing chamber includes one or more first flow dividers, the one or more first flow dividers dividing a volume into a plurality of flow levels. The flow guiding structure includes one or more second flow dividers, the one or more second flow dividers are oriented to intersect the one or more first flow dividers and divide each of the plurality of flow levels into a plurality of flow segments. The flow guiding structure includes one or more third flow dividers, the one or more third flow dividers are oriented to intersect the one or more second flow dividers and divide the plurality of flow segments into a plurality of flow regions, the plurality of flow regions having an angular size. The plurality of flow regions define a plurality of internal voids for each of the plurality of flow segments. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Thus, the above-mentioned features of the present disclosure can be understood in detail, and a more specific description of the present disclosure briefly summarized above can be made with reference to the embodiments, some of which are depicted in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments, and therefore the accompanying drawings should not be considered to limit the scope, as the present disclosure may admit to other equally effective embodiments.

[0010] Figure 1 According to one embodiment, a processing device is provided along Figure 4 Schematic cross-sectional side view of section 1-1 shown in FIG.

[0011] Figure 2 According to one embodiment Figure 1An enlarged view of a schematic cross-sectional side view of the processing device shown in .

[0012] Figure 3 According to one embodiment Figure 1 The processing equipment shown in Figure 4 Schematic cross-sectional side view of section 3-3 shown in FIG.

[0013] Figure 4 According to one embodiment Figure 1-Figure 3 The processing equipment shown in Figure 1 Schematic top cross-sectional view of section 4-4 is shown in FIG.

[0014] Figure 5 According to one embodiment Figure 1-Figure 4 Schematic perspective view of the box shown in .

[0015] Figure 6 is a schematic partial cross-sectional side view of a box and a flow guide structure according to one embodiment.

[0016] Figure 7 is a schematic diagram of a method of processing a plurality of substrates according to one embodiment.

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0018] The present disclosure relates to flow guiding structures and heat shielding structures and related methods for deposition uniformity and process tunability.

[0019] The present disclosure contemplates that terms such as "coupled," "coupled," "combined," and "coupled" may include, but are not limited to, welding, fusing, melting together, interference fit, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "coupled," "coupled," "combined," and "coupled" may include, but are not limited to, integrally formed. The present disclosure contemplates that terms such as "coupled," "coupled," "combined," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links.

[0020] Figure 1 According to one embodiment, the processing device 100 is arranged along Figure 4 1-1 is a schematic cross-sectional side view of the section shown in FIG. For the purpose of visual clarity, Figure 3 The side heat sources 118a, 118b shown in FIG. Figure 1The processing apparatus 100 includes a processing chamber having a chamber body 130 that defines a processing volume 124 .

[0021] The box 1030 is positioned in the processing volume 124 and is at least partially supported by the substrate support assembly 119 (e.g., a base assembly). The box 1030 is located inside the first shield plate 161. The box 1030 includes a first box plate 1032, a second box plate 1031 spaced apart from the first box plate 1032, and multiple horizontal surfaces that support multiple substrates 107 for simultaneous processing (e.g., epitaxial deposition). Figure 1 In the illustrated embodiment, the cassette 1030 supports twelve substrates. The cassette 1030 may support other numbers of substrates, including but not limited to two substrates 107, three substrates 107, six substrates 107, or eight substrates 107.

[0022] The processing apparatus 100 includes an upper window 116, such as a dome, disposed between the lid 104 and the processing volume 124. The processing apparatus 100 includes a lower window 115 disposed below the processing volume 124. One or more upper heat sources 106 are located above the processing volume 124 and the upper window 116. The one or more upper heat sources 106 can be radiant heat sources, such as lamps, such as halogen lamps. The one or more upper heat sources 106 are disposed between the upper window 116 and the lid 104. The upper heat sources 106 are positioned to provide uniform heating of the substrate 107. One or more lower heat sources 138 are located below the processing volume 124 and the lower window 115. The one or more lower heat sources 138 can be radiant heat sources, such as lamps, such as halogen lamps. The lower heat sources 138 are disposed between the lower window 115 and the floor 134 of the processing volume 124. The lower heat sources 138 are positioned to provide uniform heating of the substrate 107.

[0023] The present disclosure contemplates that other heat sources (in addition to or in place of lamps) may be used for the various heat sources described herein. For example, resistive heaters, light emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein.

[0024] The upper window 116 and the lower window 115 can be transparent to infrared radiation, for example, transmitting at least 95% of infrared radiation. The upper window 116 and the lower window 115 can be a quartz material (e.g., transparent quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 can be a thin quartz window that partially defines the processing volume 124. The outer window support 194 supports the inner window 193 and is at least partially arranged in the support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 can be a thin quartz window that partially defines the processing volume 124. The outer window support 188 supports the inner window 187.

[0025] The substrate support assembly 119 is disposed in the processing volume 124. One or more liners 120 are disposed in the processing volume 124 and surround the substrate support assembly 119. The one or more liners 120 facilitate shielding the chamber body 130 from processing chemicals in the processing volume 124. The chamber body 130 is at least partially disposed between the upper window 116 and the lower window 115. The one or more liners 120 are disposed between the processing volume 124 and the chamber body 130.

[0026] The processing apparatus 100 includes a plurality of gas injection passages 182 formed in the chamber body 130 and in fluid communication with the processing volume 124, and one or more gas exhaust passages 172 formed in the chamber body 130 opposite to the plurality of gas injection passages 182 (in the embodiment of FIG. Figure 1 One or more gas exhaust passages 172 are in fluid communication with the processing volume 124. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 is formed through one or more sidewalls of the chamber body 130 and through one or more liners 120 lining the one or more sidewalls of the chamber body 130.

[0027] Each gas injection passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 ( Figure 1 Two and three are shown in FIG. 1 ). One or more supply conduit systems are in fluid communication with the gas injection passage 182. Figure 1 , the internal supply conduit system 121 and the external supply conduit system 122 are in fluid communication with the gas injection passages 182. The internal supply conduit system 121 includes a plurality of internal gas boxes 123 mounted to the chamber body 130 and in fluid communication with a set of internal gas injection passages 182. The external supply conduit system 122 includes a plurality of external gas boxes 117 mounted to the chamber body 130 and in fluid communication with a set of external gas injection passages 182. The present disclosure contemplates the use of a variety of gas supply systems (e.g., supply conduit systems, gas injection passages, and / or different Figure 1 gas box shown in ).

[0028] The processing device 100 includes a flow guiding structure 150 positioned in the processing volume 124. The flow guiding structure 150 includes one or more first flow diverters 151 ( Figure 1 The one or more first flow dividers 151 divide the process volume into a plurality of flow levels 153 ( Figure 1In one or more embodiments, the flow guide structure 150 includes at least three flow levels 153. The flow guide structure 150 includes one or more second flow dividers 152 oriented to intersect with the one or more first flow dividers 151 and divide each of the plurality of flow levels 153 into a plurality of flow segments 154 (two flow segments 154 for each flow level 154). Figure 1 Each flow level 153 is shown in FIG. Figure 1 In the illustrated embodiment, each first flow splitter 151 comprises a ring, and the one or more second flow splitters 152 each comprises a cylindrical sleeve surrounding the innermost flow segment 154 of the flow segments 154. The one or more first flow splitters 151 are coupled to the one or more gaskets 120.

[0029] The plurality of gas injection passages 182 are positioned as a plurality of injection levels, such that each gas injection passage 182 corresponds to one of the plurality of injection levels. Each injection level is aligned with a corresponding flow level 153. The gas injection passage 182 of each injection level leads to the outermost flow segment 154 of the corresponding flow level (through the gas opening 186). Figure 1 In the illustrated embodiment, two or three of the gas openings 186 are grouped into each flow level, and the gas openings 186 open into the outermost flow segment 154 of the respective flow level.

[0030] The processing apparatus 100 includes a heat shield structure 1060 positioned in the processing volume 124. The heat shield structure 1060 includes a first shield plate 161 and a second shield plate 1062 located inside the one or more second diverters 152. The second shield plate 1062 is oriented to intersect the first shield plate 161 and is at least partially supported by the one or more liners 120. The first shield plate 161 can be a cylindrical sleeve.

[0031] Each of the one or more second splitters 152 includes a plurality of splitter inlet openings 155 and a plurality of splitter outlet openings 156 formed therein. The splitter outlet openings 156 are opposite to the splitter inlet openings 155. Figure 1 As shown, two or three splitter inlet openings 155 and two or three splitter outlet openings 156 are grouped into respective ones of the flow levels 153 .

[0032] The first shield plate 161 includes a plurality of shield inlet openings 165 and a plurality of shield outlet openings 166 formed therein. The shield outlet openings 166 are opposite to the shield inlet openings 165. The plurality of divider inlet openings 155 are offset from the plurality of shield inlet openings 165 in the XY plane.

[0033] Each of the one or more gaskets 120, the one or more first diverters 151, the one or more second diverters 152, the one or more third diverters 451, the first shielding plate 161, and the second shielding plate 1062 is formed of one or more of the following: quartz (e.g., transparent quartz, such as clear quartz, or opaque quartz, such as black quartz), silicon carbide (SiC), or graphite coated with SiC.

[0034] The box 1030 is located inside the first shielding plate 161. The preheating ring 111 is located outside the box 1030. The preheating ring 111 is coupled to and / or at least partially supported by one or more pads 120. The one or more second diverters 152 are coupled to and / or at least partially supported by the preheating ring 111.

[0035] Portions of the flow guide structure 150 (e.g., the first flow splitter 151) may serve as preheat rings for all flow segments 154 of each flow level 153. The preheat ring 111 may be a portion of the flow guide structure 150 (e.g., integrated with the flow guide structure 150). The present disclosure contemplates that the preheat ring 111 may be one of the first flow splitters 151.

[0036] During operation (e.g., during epitaxial deposition operations), one or more process gases P1 are supplied to the processing volume 124 through the internal supply conduit system 121 and the external supply conduit system 122 and through the plurality of gas injection passages 182. The one or more process gases P1 are supplied from one or more gas sources 196 in fluid communication with the plurality of gas injection passages 182. Each gas injection passage 182 is configured to direct the one or more process gases P1 toward the box 1030 in a generally radially inward direction. Thus, in one or more embodiments, the gas injection passages 182 may be part of a cross-flow gas injector. The flow of the one or more process gases P1 is divided into a plurality of flow levels 153. Dividing the process gas into a plurality of flow levels 153 facilitates uniform processing (e.g., deposition) on the substrate, center-to-edge uniformity, and process adjustability.

[0037] The processing apparatus 100 includes an exhaust duct system 190. One or more process gases P1 may be exhausted through exhaust openings formed in one or more liners 120, exhaust channels formed in the chamber body 130, and then through an exhaust box 1091. The one or more process gases P1 may flow out of the exhaust box 1091 and flow to an optional common exhaust box 1092, and then flow out through the duct using one or more pump devices 197 (e.g., one or more vacuum pumps).

[0038] The one or more processing gases P1 may include, for example, a purge gas, a cleaning gas, and / or a deposition gas. The deposition gas may include, for example, one or more reactive gases carried in one or more carrier gases. The one or more reactive gases may include, for example, a gas containing silicon and / or germanium (e.g., silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), and / or germanium (GeH 4 )), chlorine-containing etching gases (e.g., hydrogen chloride (HCl)) and / or doping gases (e.g., phosphine (PH 3 ) and / or diborane (B 2 H 6 )). The one or more purge gases may include, for example, argon (Ar), helium (He), nitrogen (N 2 ), hydrogen chloride (HCl) and / or hydrogen (H 2 )

[0039] The purge gas P2 supplied from the purge gas source 129 is introduced into the bottom region 105 of the processing volume 124 through one or more purge gas inlets 184 formed in the sidewall of the chamber body 130 .

[0040] One or more purge gas inlets 184 are disposed at a height below the gas injection passage 182. If one or more liners 120 are used, a section of the one or more liners 120 may be disposed between the gas injection passage 182 and the one or more purge gas inlets 184. In either case, the one or more purge gas inlets 184 are configured to direct the purge gas P2 in a generally radially inward direction. The one or more purge gas inlets 184 may be configured to direct the purge gas P2 in an upward direction. During the film forming process, the substrate support assembly 119 is located in a position that facilitates the purge gas P2 to flow generally along the flow path through the back side of the box 1030. The purge gas P2 leaves the bottom region 105 and is exhausted from the processing device 100 through the one or more purge gas exhaust passages 102, which are located on the opposite side of the processing volume 124 relative to the one or more purge gas inlets 184.

[0041] The substrate support assembly 119 includes a first support frame 198 and a second support frame 199 disposed at least partially around the first support frame 198. The second support frame 199 includes an arm coupled to the cassette 1030 such that lifting and lowering the second support frame 199 lifts and lowers the cassette 1030. A plurality of lift rods 189 are suspended from the cassette 1030. Lowering of the cassette 1030 initiates contact of the lift rods 189 with the arms of the first support frame 198. Continued lowering of the cassette 1030 initiates contact of the lift rods 189 with the substrates in the cassette 1030 such that the lift rods 189 lift the substrates in the cassette 1030. The bottom region 105 of the processing apparatus 100 is defined between the floor 134 and the cassette 1030. The rods 125 of each support frame 198, 199 extend through the bottom 135 and the floor 134 of the chamber body 130. The rods 125 are coupled to respective motors 164 that are configured to independently raise, lower, and / or rotate the cassette 1030 using the second support frame 199 and independently raise and lower the lift rod 189 using the first support frame 198 .

[0042] The base bellows port 160 is formed in the bottom plate 134 and the bottom 135 of the chamber body 130. The base bellows port 160 extends through the bottom 135 of the chamber body 130. The base bellows port 160 has a diameter greater than the diameter of the rod 125 and surrounds each rod 125, wherein the rod 125 extends through the bottom 135 of the chamber body 130. The base bellows port 160 circumferentially surrounds the rod 125. A bellows assembly 158 is disposed around each base bellows port 160 to help reduce or eliminate vacuum leakage outside the chamber body 130. Each bellows assembly 158 defines and surrounds a portion of the rod 125 disposed outside the chamber body 130. The bellows assembly 158 is coupled between the outer surface of the bottom 135 of the chamber body 130 and the base member 180. The base member 180 may house the motor 164 and a portion of the rod 125 coupled to the motor 164. The bellows assembly 158 can be formed of a metal or metallized material and is configured to form an airflow channel 162. The airflow channel 162 is defined as the area between the outer rod 125 and the bellows assembly 158. The airflow channel 162 extends from the base bellows port 160 to the base member 180. As such, the airflow channel 162 forms a hollow cylindrical passage between the bellows assembly 158 and the rod 125. The airflow channel 162 is fluidly coupled between the bottom region 105 and an exhaust conduit that can be used to pump (e.g., exhaust) gas from the bottom region 105 through the base bellows port 160.

[0043] An opening 136 (substrate transfer opening) is formed through one or more sidewalls of the chamber body 130. The opening 136 can be used to transfer the substrate 107 to or from the cassette 1030, for example, into and out of the processing volume 124. In one or more embodiments, the opening 136 comprises a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve that enables the substrate to pass therethrough. For purposes of visual clarity, the opening 136 is not shown in FIG. Figure 1 and Figure 3 Shown by dotted lines.

[0044] The processing apparatus 100 may include one or more temperature sensors 191, 192, 282, such as optical pyrometers, which measure the temperature within the processing apparatus 100 (e.g., on a surface of the upper window 116, and / or one or more surfaces of the substrate 107, the heat shield structure 1060, and / or the box 1030). The one or more temperature sensors 191, 192 are disposed on the lid 104. The one or more temperature sensors 282 (e.g., lower pyrometers) are disposed on the underside of the lower window 115. The one or more temperature sensors 282 may be adjacent to and / or disposed on the bottom 135 of the chamber body 130.

[0045] In one or more embodiments, the upper temperature sensors 191, 192 are oriented toward the top of the cassette 1030 (e.g., the upper surface of the second cassette plate 1031). In one or more embodiments, the side temperature sensor 281 is oriented toward the first shielding plate 161 and / or the substrate support 212 of the cassette 1030. In one or more embodiments, the lower temperature sensor 282 is oriented toward the bottom of the cassette 1030 (e.g., the lower surface of the first cassette plate 1032).

[0046] The processing device 100 includes a controller 1070 configured to control the processing device 100 or a component of the processing device 100. For example, the controller 1070 can control the operation of a component of the processing device 100 using direct control of the component or by controlling a controller associated with the component. In operation, the controller 1070 enables data and feedback to be collected from various chambers to coordinate and control the performance of the processing device 100.

[0047] The controller 1070 generally includes a central processing unit (CPU) 1071, a memory 1072, and support circuits 1073. The CPU 1071 can be one of any form of general purpose processor that can be used in an industrial environment. The memory 1072, or non-transitory computer readable medium, can be accessed by the CPU 1071 and can be one or more of memories such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage. The support circuits 1073 are coupled to the CPU 1071 and can include caches, clock circuits, input / output subsystems, power supplies, etc.

[0048] The various methods (e.g., method 700) and operations disclosed herein can generally be implemented under the control of CPU 1071 by CPU 1071 executing computer instruction codes stored in memory 1072 (or in the memory of a particular processing chamber), such as, for example, software routines. When CPU 1071 executes the computer instruction codes, CPU 1071 controls the components of processing device 100 to operate according to the various methods and operations described herein. In one embodiment that can be combined with other embodiments, memory 1072 (a non-transitory computer-readable medium) includes instructions stored therein, which, when executed, cause the methods (e.g., method 700) and operations (e.g., operations 702-712) described herein to be performed. Controller 1070 can, for example, be in communication with a heat source, a gas source, and / or a vacuum pump of processing device 100 to enable the execution of multiple operations.

[0049] Figure 2 According to one embodiment Figure 1 0 is an enlarged view of a schematic cross-sectional side view of the processing device 100 shown in FIG.

[0050] The box 1030 includes a plurality of horizontal surfaces 211 between the first box plate 1032 and the second box plate 1031 .

[0051] Each horizontal surface 211 includes an arcuate support 212 having one or more inner lugs 213 that support the base plate 107 . Figure 2 1030. The box 1030 includes a first horizontal surface 211a and a second horizontal surface 211b, wherein the first horizontal surface 211a includes a first arch support 212a having a first inner lug 213a, and the second horizontal surface 211b includes a second arch support 212b having a second inner lug 213b. The first arch support 212a and the second arch support 212b are located between the first box plate 1032 and the second box plate 1031.

[0052] The box 1030 includes a first opening 215 on the outside of the first arcuate support 212a, a second opening 216 between the first arcuate support 212a and the second arcuate support 212b. Each inner lug 213a-213c includes a support surface 217a-217c.

[0053] Each shield inlet opening 165 and each shield outlet opening 166 are aligned between two corresponding arched support members 212 (eg, Figure 2 ). The locations of the shield inlet opening 165 and the shield outlet opening 166 facilitate providing one or more process gases P1 to the gaps between adjacent substrates 107, which facilitates process uniformity and process tunability.

[0054] Cassette 1030 includes a plurality of mounting posts 1081 extending through arcuate supports 212 (including first arcuate support 212a, second arcuate support 212b, and third arcuate support 212c).

[0055] Each mounting post 1081 of the plurality of mounting posts 1081 includes a lug interface between the corresponding mounting post and the arcuate support 212. In one or more embodiments, the lug 220 can extend outwardly relative to the mounting post 1081. In one or more embodiments, the lug can extend inwardly relative to the inner surface of the arcuate support 212, such as extending into a groove formed in the outer surface of the mounting post 1081. The lug 220 can include, for example, one or more pins or one or more arcuate ring segments.

[0056] The substrate support assembly 119 includes an outer ring 1033 that supports a first cassette plate 1032 .

[0057] Figure 3 According to one embodiment Figure 1 The processing device 100 shown in FIG. Figure 4 Schematic cross-sectional side view of section 3-3 shown in FIG. Figure 3 The cross-sectional view shown is relative to Figure 1 The cross-sectional view shown is rotated 55 degrees.

[0058] The processing apparatus 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistive heaters, side LEDs, and / or side lasers) located outside the processing volume 124. One or more second side heat sources 118b are across the processing volume 124 opposite the one or more first side heat sources 118a.

[0059] exist Figure 3 In the embodiment, the guide structure 150 and the heat shielding structure 1060 are not shown for the purpose of visual clarity. In addition, the present disclosure contemplates that the guide structure 150 and / or the heat shielding structure 1060 can be Figure 1-Figure 3 100. In such an embodiment, one or more process gases P1 flow from the gas injection passages 182 into the outer annulus of the processing volume 124, and then flow into the openings 215, 216 between and outwardly of the arched supports 212, and then flow into the gaps between the substrates 107. The one or more process gases P1 flow out of the gaps, into the openings 215, 216 on the exhaust side of the substrates 107, into the outer annulus of the processing volume 124, and into the one or more gas exhaust passages 172. The present disclosure also contemplates that multiple lines (e.g., conduits) in the processing volume 124 can connect each gas injection passage 182 to each inlet opening of the box 1030.

[0060] In addition to the one or more temperature sensors 191, 192 located above the processing volume 124 and above the second shielding plate 1062, the processing device 100 may also include one or more temperature sensors 281, such as optical pyrometers, which measure the temperature in the processing device 100 (for example, on the surface of the upper window 116 and / or one or more surfaces of the substrate 107, the heat shielding structure 1060, the multiple windows 457 (discussed below), and / or the box 1030). The one or more temperature sensors 281 are side temperature sensors (for example, side pyrometers) located outside the processing volume 124, outside the one or more second diverters 152 of the flow guiding structure 150, outside the one or more second diverters 152 of the flow guiding structure 150, and outside the multiple windows 457. The one or more temperature sensors 281 can, for example, be connected to the second diverter 152 or the multiple windows 457 (such as Figure 3 as shown) radially aligned.

[0061] One or more side temperature sensors 281 (e.g., one or more pyrometers) may be used to measure the temperature within the processing volume 124 from each side of the processing volume 124. The side sensors 281 are arranged at multiple sensor levels ( Figure 3 In one or more embodiments, the number of sensor levels is equal to the number of heat source levels. In one or more embodiments, the number of sensor levels is equal to the number of injection levels 153. In one or more embodiments, the number of sensor levels is equal to the number of levels of the box 1030. Each sensor level corresponds to a corresponding level of the box 1030, such that one or more side sensors of each sensor level are configured to measure the temperature of the corresponding level (e.g., the temperature of the substrate and / or substrate support of the corresponding level). Each side sensor 281 can be horizontally oriented or can be directed (e.g., oriented downward at a certain angle) toward the substrate 107 and arched support 212 of the corresponding level of the box 1030 (see, e.g., Figure 6 Side sensor 281 shown in ).

[0062] Figure 4 According to one embodiment Figure 1-Figure 3 The processing device 100 shown in FIG. Figure 1 Schematic top cross-sectional view of section 4-4 is shown in FIG.

[0063] The flow guiding structure 150 includes one or more third flow dividers 451, which are oriented to intersect with one or more first flow dividers 151 and one or more second flow dividers 152. The one or more third flow dividers 451 divide the plurality of flow segments 154 into a plurality of flow zones 454 ( Figure 4 4 shows three flow zones 454 for the injection section 401). In one or more embodiments, the flow guide structure 150 includes at least two flow zones 454 for the injection section 401. Each flow zone 454 of the plurality of flow zones 454 has an angular size A1 in the range of 15 degrees to 25 degrees. In one or more embodiments, the angular size A1 is 20 degrees. Other values ​​are contemplated for the angular size A1. Each of the flow zones 454B, 454C includes a central axis angularly offset from the section 1-1 at an angle equal to the angular size A1.

[0064] Each of the plurality of flow segments 154 includes a plurality of internal voids 455 defined by a plurality of flow areas 454, so that both the flow guide structure 150 and the heat shield structure 1060 are free of gas pipelines. The processing apparatus 100 is free of gas pipelines inside the gas channel 185 and inside the gas exhaust passage 172. The injection of one or more process gases P1 occurs outside the isothermal first shielding plate 161. The one or more process gases P1 flow from the gas channel 185 through the one or more gas openings 186 and enter the flow segment 154 on the injection side of the box 1030. The one or more process gases flow from the flow segment 154 through the shielding inlet opening 165 and flow into the internal space surrounded by the first shielding plate 161. In the internal space, the process gas P1 flows between the arched supports 212 and between the substrate 107. The one or more process gases P1 flow out from the inner space, pass through the first shielding plate 161 on the exhaust side of the box 1030, and flow out through the flow section 154 on the exhaust side of the box 1030. The one or more process gases P1 flow through openings and gaps instead of gas pipelines (such as delivery pipes and conduits) in the one or more liners 120, the flow guide structure 150, and the heat shielding structure 1060. Injecting the one or more process gases P1 includes directly flowing from the shielding inlet opening 165 into the openings between the arched supports 212, and directly flowing from the openings between the arched supports 212 into the gaps between the substrates 107.

[0065] The present disclosure contemplates that, for each heat source level, one or more temperature sensors 281 are included on each of the injection side and the discharge side of the cartridge 1030. As an example, for each heat source level, a temperature sensor 281 may be disposed proximate one or both of the side heat sources 118a, 118c on the injection side, and for each heat source level, a temperature sensor 281 may be disposed proximate one or both of the side heat sources 118b, 118d on the discharge side.

[0066] In one or more embodiments, the heat shield structure 1060 is isothermal during processing (e.g., during heating using a heat source) such that a first temperature gradient along the height of the first shield plate 161 is within a difference of 5% or less along the entire height. The heat shield structure 1060 is isothermal such that a second temperature gradient along the width of the second shield plate 1062 is within a difference of 5% or less along the entire width.

[0067] For each substrate 107, the distance from one or more injection valves 183 (supplying one or more processing gases P1 from one or more gas sources 196) to the corresponding substrate 107 (e.g., along the internal supply conduit system 121) is substantially the same, such as within 5% or less of each other.

[0068] Each injection level of gas injection passage 182 includes one or more first gas channels 185A (one shown) and one or more first gas openings 186A (two shown) aligned with a first flow zone 454A of the plurality of flow zones 454. Each injection level of gas injection passage 182 includes one or more second gas channels 185B (one shown) and one or more second gas openings 186B aligned with a second flow zone 454B of the plurality of flow zones 454. The second flow zone 454B is on a first side of the first flow zone 454A. Each injection level of gas injection passage 182 includes one or more second gas channels 185C (one shown) and one or more third gas openings 186C aligned with a third flow zone 454C of the plurality of flow zones 454. The third flow zone 454C is on a second side of the first flow zone 454A.

[0069] One or more third flow dividers 451 extend radially outward between the first shielding plate 161 and the chamber body 130 such that the plurality of flow regions 454 are pancake-shaped.

[0070] Each of the gas opening 186, the diverter inlet opening 155, the diverter outlet opening 156, the shield inlet opening 165, and / or the shield outlet opening 166 may include a hole (e.g., a cylindrical hole) and / or an arcuate slot. For each injection level, each of the gas opening 186, the diverter inlet opening 155, the diverter outlet opening 156, the shield inlet opening 165, and / or the shield outlet opening 166 may include a single opening or multiple openings. For example, Figure 4 The three shielded outlet openings 166 shown in can be combined into a single arcuate slot. As another example, there can be multiple injection points for each substrate 107. The present disclosure contemplates that aspects, features, components, operations, and / or characteristics can be combined with respect to the inlet openings and outlet openings described herein.

[0071] The plurality of diverter inlet openings 155 are offset from the plurality of shield inlet openings 165 in a direction D1 parallel to the one or more third diverters 451 .

[0072] The plurality of splitter inlet openings 155 includes one or more splitter inlet openings 155A, 155B, 155C aligned with each corresponding flow zone 454A, 454B, 454C of the plurality of flow zones 454. The plurality of shield inlet openings 165 includes one or more shield inlet openings 165A, 165B, 165C aligned with each corresponding flow zone 454A, 454B, 454C of the plurality of flow zones 454. The plurality of splitter outlet openings 156 includes one or more splitter outlet openings 156A, 156B, 156C aligned with each corresponding flow zone 454A, 454B, 454C of the plurality of flow zones 454. The plurality of shield outlet openings 166 includes one or more shield outlet openings 166A, 166B, 166C aligned with each corresponding flow zone 454A, 454B, 454C of the plurality of flow zones 454.

[0073] One or more liners 120 include a plurality of liner gaps 421. The liner gaps 421 may be formed in one or more liners 120 and / or disposed between liners of one or more liners 120. The flow guide structure 150 includes a plurality of flow gaps 456 between a plurality of third flow dividers 451. Each side heat source 118a-118d and the window 457 include a central axis CA1 that is angularly offset from the section 1-1 by an angle A2. Angle A2 is in the range of 50 to 60 degrees. In one or more embodiments, angle A2 is 55 degrees. Other values ​​may be envisioned for angle A2. In one or more embodiments, four side heat sources 118a-118d are included for each injection level 153 of a plurality of injection levels 153, such that the number of side heat source levels is equal to the number of injection levels 153 and the number of flow levels. In one or more embodiments, the plurality of side heat sources 118a-118d are arranged in a plurality of heat source levels corresponding to the plurality of flow levels and the plurality of injection levels 153, and each of the plurality of heat sources 118a-118d is independently controlled to independently heat each flow level and each injection level 153. For example, different radiation may be directed to each flow level and each injection level 153.

[0074] The plurality of flow gaps 456 are aligned with the plurality of liner gaps 421. The flow guide structure 150 includes a plurality of windows 457 at least partially aligned with the plurality of liner gaps 421. The plurality of side heat sources 118a-118d are configured to generate heat (e.g., light) through the plurality of windows 457 and the plurality of flow gaps 456. Using the windows 457 and the flow gaps 456, heat (e.g., light) is directed to the first shield plate 161 instead of the flow guide structure 150 to facilitate heating the isothermal heat shield structure 1060. The plurality of windows 457 are offset from each other along the circumference of the chamber body 130. In one or more embodiments, the windows 457 are formed of quartz. In one or more embodiments, the windows 457 are substantially transparent and the heat shield structure 1060 and the flow guide structure 150 are each substantially opaque.

[0075] like Figure 1 As shown, each of the plurality of diverter inlet openings 155, the plurality of diverter outlet openings 156, the plurality of shield inlet openings 165, and the plurality of shield outlet openings 166 are aligned between the bottom plate 134 of the processing volume 124 and the top plate 137 of the processing volume 124. The injection and exhaust of the processing gas P1 and the purge gas P2 into and out of the processing volume 124 is through one or more sides 139 of the processing volume 124 (between the bottom plate 134 and the top plate 137).

[0076] like Figure 1As shown, the opening 136 is located below the flow guide structure 150, below the heat shield structure 1060, and below the preheat ring 111. When the substrate support assembly 119 and the box 1030 are in the raised position for processing, the box 1030 (including the first box plate 1032) is positioned above the opening 136. In the raised position, the shoulder 1034 of the outer ring 1033 of the substrate support assembly 119 engages the preheat ring 111 to substantially isolate (e.g., seal) the bottom area 105 and the opening 136 from one or more process gases P1 to help reduce gas escape through the opening 136 and reduce corrosion and / or contamination of chamber components and / or stored substrates. The substrate support assembly 119 and the box 1030 (including the first box plate 1032 and the outer ring 1033) facilitate a smaller travel distance (e.g., less lowering) of the box 1030 to transfer the substrate 107 into or out of the box 1030. For example, the first cassette plate 1032 can be moved upward relative to the outer ring 1033 (and the guide structure 150) so that the first support frame 198 can contact and lift the first cassette plate 1032 when the first support frame 198 is lifted, so that the lifting rods 189 can lift the substrate 107 for transfer. This movement facilitates the use of shorter lifting rods 189 for reducing the footprint. As described above, the movement of the first support frame 198 (the first support frame 198 can move the lifting rods 189 and the first cassette plate 1032) is independent of the movement of the second support frame 199 (the second support frame 199 can move the cassette 1030 supporting the substrate 107). In one or more embodiments, the outer ring 1033 is a complete ring that provides support to the cassette 1030 along the entire circumference of the cassette 1030.

[0077] like Figure 4 As shown, the flow guide structure 150 includes an injection section 401, an exhaust section 402, a first cross-flow section 403, and a second cross-flow section 404. Each of the sections 401-404 includes one or more first flow dividers 151 and one or more second flow dividers 152. The first cross-flow section 403 and the second cross-flow section 404 each include two third flow dividers 451, and the injection section 401 and the exhaust section 402 each include four third flow dividers 451. In one or more embodiments, each of the sections 401-404 includes the same number of injection levels. Figure 4In the illustrated embodiment, each injection level gas injection passage 182 includes one or more first gas openings 186A-186C opposite one or more gas exhaust passages 172, one or more second gas openings 186D circumferentially located between the one or more first gas openings 186A-186C and the one or more gas exhaust passages 172, and one or more third gas openings 186E opposite the one or more second gas openings 186D. Each of the one or more first gas openings 186A-186C, the one or more second gas openings 186D, and the one or more third gas openings 186E is aligned with a corresponding flow area 454 of the plurality of flow areas 454A-454E.

[0078] The present disclosure contemplates that the segments 401 - 404 of the flow directing structure 150 may be coupled to one another (eg, integrated to form, for example, an annular structure) or may be decoupled from one another for independent movement.

[0079] While one or more gas sources 196 supply one or more process gases P1 through injection section 401, one or more gas sources 496, 498 can supply one or more process gases P1 to processing volume 124 through first cross-flow section 403 and second cross-flow section 404. Third flow divider 451 of sections 401-404 substantially isolates (e.g., seals) flow gap 456 from one or more process gases P1. Third flow divider 451 helps reduce interference of process gas P1 with heating (e.g., light) from side heat sources 118a-118d.

[0080] Figure 5 According to one embodiment Figure 1-Figure 4 A schematic perspective view of the box 1030 shown in FIG. Figure 1 In the illustrated embodiment, the box 1030 includes twelve horizontal surfaces 211 that support twelve substrates 107. Figure 5 In the illustrated embodiment, the cassette 1030 includes three levels 211 configured to support up to three substrates 107 during simultaneous processing. The present disclosure contemplates different numbers of levels 211 (eg, two or more) for the cassette 1030 to support different numbers of substrates (eg, two or more).

[0081] Each arched support member 212 of the horizontal plane 211 is a ring or one or more ring segments. Figure 5 In the illustrated embodiment, each arched support member 212 includes a gap 501 so that each arched support member 212 is a single C-shaped ring segment. The box 1030 includes a base segment 505, and the arm of the second support frame 199 can be coupled to the base segment 505 via a first box plate 1032. The first box plate 1032 and the outer ring 1033 can be two pieces (such as Figure 21031 ), or may be integrated into a single piece. In one or more embodiments, mounting post 1081 extends at least partially through second box plate 1031 at a first end and at least partially through base section 505 at a second end. Mounting post 1081 may be attached to base section 505 or integrally formed with base section 505. In one or more embodiments, mounting post 1081 is attached to upper surface 506 of base 505 or integrally formed with upper surface 506.

[0082] The present disclosure contemplates that the gap 501 may face a side of the chamber body 130 having the gas exhaust passage 172 , and / or the opening 136 may be formed on a side of the chamber body 130 having the gas exhaust passage 172 .

[0083] Figure 6 6 is a schematic partial cross-sectional side view of a box 630 and a flow guiding structure 650 according to one embodiment. The box 630 has two horizontal surfaces that support two substrates 107a, 107b during processing. The flow guiding structure 650 includes a single first flow divider 151 (in addition to the preheat ring 111, which can be a first flow divider). Using the first flow divider 151, the flow guiding structure 650 provides two independent process gas flows (which can be the same or different process gases), one to each of the two substrates 107a, 107b. As an example, the flow guiding structure 650 can provide a first process gas P1 to flow through the first substrate 107a, and provide a second process gas P2 to flow through the second substrate 107b.

[0084] The present disclosure contemplates that the first box plate 1032 may be omitted, so that the second box plate 1031 may be referred to as a box plate or a first box plate. In one or more embodiments, the first box plate 1032 is used when the second box plate 1031 is formed of an opaque material. In one or more embodiments, the first box plate 1032 and / or the second box plate 1031 are formed of a transparent material (e.g., transparent quartz). In one or more embodiments, the first box plate 1032 and / or the second box plate 1031 are formed of one or more of quartz, silicon carbide (SiC), or graphite coated with SiC.

[0085] In one or more embodiments, the boxes described herein (e.g., box 630 and / or box 1030) may include a total of two horizontal planes (supporting a total of two substrates) or a total of three horizontal planes (supporting a total of three substrates), or a total of n horizontal planes (supporting a total of n substrates, where n is equal to or greater than 4) to facilitate enhanced deposition uniformity and device performance while facilitating increased throughput at a low chamber size and footprint.

[0086] The present disclosure contemplates that each arched support 212 may be replaced with a base (supporting each base plate 107) having a pin opening through which the lift rods 189 may pass.

[0087] Figure 7 is a schematic diagram of a method 700 of processing a plurality of substrates according to one embodiment.

[0088] Operation 702 of method 700 includes positioning a first substrate in a processing volume of a chamber.

[0089] Operation 704 includes positioning a second substrate in the processing volume and spaced apart from the first substrate.

[0090] The present disclosure contemplates that one or more additional substrates (in addition to the first and second substrates)—eg, a third substrate and / or a fourth substrate—can be positioned in the processing volume prior to processing and after operation 704 at a substrate spacing from each substrate.

[0091] Operation 706 includes flowing one or more process gases into the processing volume.

[0092] Operation 708 includes heating the first substrate and the second substrate. It is contemplated that operation 708 may occur before, after, or simultaneously with operation 706.

[0093] Operation 710 includes simultaneously depositing one or more layers on each of a first substrate and a second substrate.

[0094] Operation 712 includes exhausting one or more process gases from the processing volume. During the flow of operation 706 and / or exhaust of operation 712, the one or more process gases may follow the flow paths described herein (e.g., with respect to Figure 1-Figure 6 flow path described).

[0095] Benefits of the present disclosure include increased throughput, efficient use of gases, reduced costs, reduced processing time, increased chamber capacity, increased growth rate of deposited films, enhanced device performance, more continuous gas velocity of gases flowing through substrates, more uniform device performance across multiple substrates, more uniform and stable thermal processing across multiple substrates, and reduced size (e.g., of the chamber) and footprint. Benefits also include uniform adjustability, such as process temperature control and adjustability, gas parameter control and adjustability, and substrate center-to-edge (e.g., deposition uniformity) control and adjustability. As an example, such benefits are facilitated in relatively complex operations, such as operations requiring increased center-to-edge deposition uniformity and / or batch processing of multiple substrates simultaneously.

[0096] Benefits also include enhanced device performance and modularity of applications. For example, batch processing can be used for relatively complex epitaxial deposition operations with relatively small footprints and relatively large throughputs while maintaining or increasing growth rates and maintaining or increasing device performance. Implementation of the present disclosure facilitates these benefits of the present application. For example, such benefits can be facilitated for an internal substrate that is not the outermost substrate of a plurality of substrates supported on a cassette.

[0097] It is contemplated that aspects described herein may be combined. For example, one or more features, aspects, components, operations, and / or characteristics of the processing device 100, the cartridge 1030, the cartridge 630, the flow guiding structure 150, the flow guiding structure 650, the heat shielding structure 1060, and / or the method 700 may be combined. It is further contemplated that any combination may achieve the above benefits.

[0098] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is to be determined by the claims that follow.

Claims

1. An apparatus for substrate processing, comprising: The chamber body comprises: Processing volume, a plurality of gas injection passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body; one or more heat sources configured to generate heat; a substrate support assembly positioned in the processing volume; and A flow guiding structure is positioned in the processing volume, the flow guiding structure comprising: one or more first flow dividers, dividing the process volume into a plurality of flow levels, one or more second flow splitters oriented to intersect the one or more first flow splitters and divide each of the plurality of flow levels into a plurality of flow segments, and One or more third flow splitters are oriented to intersect the one or more second flow splitters and divide the plurality of flow segments into a plurality of flow regions.

2. The apparatus of claim 1, wherein each flow region of the plurality of flow regions has an angular size in the range of 15 degrees to 25 degrees.

3. The apparatus of claim 1, wherein each of the plurality of flow regions comprises a plurality of internal voids defined by the plurality of flow regions.

4. The apparatus of claim 1, wherein the plurality of gas injection passages are positioned as a plurality of injection levels, each injection level being aligned with a corresponding flow level, and the gas injection passages of each injection level being open to an outermost flow segment of the corresponding flow level.

5. The apparatus of claim 4, wherein the gas injection passage of each injection level comprises: one or more first gas openings aligned with a first flow region of the plurality of flow regions; one or more second gas openings aligned with a second flow region of the plurality of flow regions, wherein the second flow region is located on a first side of the first flow region; and One or more third gas openings are aligned with a third flow region of the plurality of flow regions, wherein the third flow region is located on a second side of the first flow region.

6. The apparatus of claim 1, further comprising one or more liners configured to line one or more side walls of the chamber body, wherein the one or more first diverters are coupled to the one or more liners.

7. The apparatus of claim 6, further comprising a heat shield structure positioned in the processing volume, the heat shield structure comprising: a first shielding plate positioned inside the one or more second diverters; and A second shield plate is oriented to intersect the first shield plate and is at least partially supported by the one or more gaskets.

8. The apparatus of claim 7, wherein the substrate support assembly comprises a cassette, and the apparatus further comprises: one or more upper pyrometers positioned above the second shield plate of the heat shield structure and oriented toward the top of the box; one or more side pyrometers positioned outside the one or more second flow diverters of the flow guiding structure, the one or more side pyrometers being oriented toward the first shielding plate; and One or more pyrometers are positioned below the processing volume and oriented toward the bottom of the box.

9. The apparatus of claim 7, wherein each of the one or more first shunts, the one or more second shunts, the one or more third shunts, the first shielding plate, and the second shielding plate is formed of one or more of: quartz, silicon carbide (SiC), or graphite coated with SiC.

10. The apparatus of claim 7, wherein the one or more third flow dividers extend radially outward between the first shield plate and the chamber body such that a plurality of flow regions are pancake-shaped.

11. The apparatus of claim 7, wherein: Each of the one or more second splitters includes a plurality of splitter inlet openings and a plurality of splitter outlet openings formed therein; and The first shield plate includes a plurality of shield inlet openings and a plurality of shield outlet openings formed therein.

12. The apparatus of claim 11, wherein the plurality of diverter inlet openings are offset from the plurality of shield inlet openings in a direction parallel to the one or more third diverters.

13. The apparatus of claim 11, wherein: the plurality of splitter inlet openings comprising one or more splitter inlet openings aligned with each respective flow region of the plurality of flow regions; the plurality of splitter outlet openings comprising one or more splitter outlet openings aligned with each respective flow region of the plurality of flow regions; the plurality of shielded inlet openings comprising one or more shielded inlet openings aligned with each respective flow zone of the plurality of flow zones; and The plurality of shield outlet openings includes one or more shield outlet openings aligned with each respective flow region of the plurality of flow regions.

14. The apparatus of claim 11, wherein each of the plurality of diverter inlet openings, the plurality of diverter outlet openings, the plurality of shield inlet openings, and the plurality of shield outlet openings are aligned between a bottom plate of the processing volume and a top plate of the processing volume.

15. The apparatus of claim 1, further comprising a substrate transfer opening formed in the chamber body and positioned below the flow directing structure, wherein the substrate support assembly comprises an outer ring supporting a plate, and the plate is movable relative to the outer ring.

16. An apparatus for substrate processing, comprising: The chamber body comprises: one or more side walls, Processing volume, a plurality of gas injection passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body; a substrate support assembly positioned in the processing volume; one or more liners configured to line the one or more sidewalls of the chamber body, the one or more liners comprising a plurality of liner gaps; A flow guiding structure is positioned in the processing volume, the flow guiding structure comprising: one or more first flow dividers that divide the process volume into a plurality of flow levels, the one or more first flow dividers being coupled to the one or more pads, one or more second flow splitters oriented to intersect the one or more first flow splitters and divide each of the plurality of flow levels into a plurality of flow segments, and a plurality of third flow splitters oriented to intersect the one or more second flow splitters and divide the plurality of flow segments into a plurality of flow regions, and a plurality of flow gaps between the plurality of third flow dividers, the plurality of flow gaps being aligned with the plurality of gasket gaps; and A plurality of windows are at least partially aligned with the plurality of gasket gaps.

17. The apparatus of claim 16, further comprising: a plurality of side heat sources configured to generate heat through the plurality of windows and the plurality of flow gaps, wherein the plurality of side heat sources are arranged in a plurality of heat source levels corresponding to the plurality of flow levels, and each of the plurality of heat sources is independently controlled to independently heat each of the plurality of flow levels; one or more upper heat sources configured to generate heat through a ceiling of the processing volume; one or more lower heat sources configured to generate heat through a floor of the processing volume; and One or more side pyrometers are positioned outside the one or more second flow diverters of the flow guiding structure, each of the one or more side pyrometers being radially aligned with one of the plurality of windows and one of the plurality of gasket gaps.

18. The apparatus of claim 16, wherein the plurality of windows are offset from one another circumferentially along the chamber body, and wherein the plurality of windows are formed of quartz.

19. The apparatus of claim 16, wherein the gas injection passage of each injection level comprises: one or more first gas openings opposite the one or more gas exhaust passages; one or more second gas openings circumferentially located between the one or more first gas openings and the one or more gas exhaust passages; and one or more third gas openings, opposite to the one or more second gas openings, Wherein each of the one or more first gas openings, the one or more second gas openings, and the one or more third gas openings is aligned with a corresponding flow region of the plurality of flow regions.

20. A flow guide structure for positioning in a substrate processing chamber, comprising: one or more first flow dividers to divide the volume into a plurality of flow levels; one or more second flow splitters oriented to intersect the one or more first flow splitters and divide each of the plurality of flow levels into a plurality of flow segments, and One or more third flow splitters are oriented to intersect the one or more second flow splitters and divide the plurality of flow segments into a plurality of flow areas having angular dimensions that define a plurality of internal voids for each of the plurality of flow segments.

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